TWI300253B - - Google Patents
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- TWI300253B TWI300253B TW091109596A TW91109596A TWI300253B TW I300253 B TWI300253 B TW I300253B TW 091109596 A TW091109596 A TW 091109596A TW 91109596 A TW91109596 A TW 91109596A TW I300253 B TWI300253 B TW I300253B
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- bonding pad
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- total reflection
- infrared spectrometer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
I3〇〇253I3〇〇253
發明領域: 種 $發明係有關於一種自動監測系統,特別是有關於— 接合塾表面之自動監測系統及方法,用以線上 f · line)監測晶圓上接合墊(b〇nding pad)之表面 淨度(cleanness )。 〆、 相關技術說明: 現今的半導體製程中,隨著元件尺寸縮小化的發展以 及提f元件操作速度的需求,具有低電阻常數和高電子遷 =阻抗的鋼金屬,已逐漸被應用來作為金屬内連線的材 、此外,在主要電路區域形成鑲嵌式銅内連線的同時, 亦在上述週邊形成接合墊(bonding pad)區域的銅金屬 形成於最外側之金屬層,係經打線機(b〇n ^屬接線將金屬層連接於導架(lead frame)之相對 。換言之,最外側之金屬層係作為内盥‘ 號導腳間之介…外接信號不外乎就是電源…卜2 信號、或輸入/輸出信號等等。然而,請參:圖' = 20。上銅接合墊200a容易遭受污染而產生銅氧化二:圓 導致金屬接線202與銅氧化物2〇〇b接觸 2_之間的附著力’進而發生打線 低合塾 離。因此,監控接合墊之表面潔淨 ^ :墊200a剝 一重要步驟。 X成為打線製程前之 傳統上監控接合墊之表面潔淨度之方法 圓後,將此晶圓進行破片處理成試片,1 \ ^樣取出晶 ^ ,/、中試片上具有欲FIELD OF THE INVENTION: The invention relates to an automatic monitoring system, and more particularly to an automatic monitoring system and method for joining a surface of a crucible for monitoring the surface of a pad on a wafer. Cleanness. 〆, related technical description: In today's semiconductor manufacturing process, with the development of component size reduction and the demand for f component operation speed, steel metal with low resistance constant and high electron mobility = impedance has been gradually applied as a metal. The interconnecting material and the inlaid copper interconnect are formed in the main circuit region, and the copper metal forming the bonding pad region in the periphery is formed on the outermost metal layer, and is passed through a wire bonding machine ( B〇n ^ is the connection of the metal layer to the lead frame. In other words, the outermost metal layer is used as the inner 盥's guide pin... The external signal is nothing more than the power supply... Bu 2 signal , or input / output signals, etc. However, please refer to: Figure ' = 20. The upper copper bond pad 200a is susceptible to contamination to produce copper oxidation two: the circle causes the metal wire 202 to contact the copper oxide 2〇〇b 2_ The adhesion between the wires is further reduced. Therefore, the surface of the bonding pad is cleaned. ^: The pad 200a is stripped of an important step. X is the surface of the conventionally monitored bonding pad before the wire bonding process. After a round of the method, this wafer is processed into test pieces fragment, 1 \ ^ ^ comp taken crystal, /, having to be on the test strip
1300253 五、發明說明(2) $,則之接合墊部分。接著,將試片放置於χ射線光電子光 =儀(X-ray photoelectron Spectr〇sc〇py,xps)進行 偵測分析。 然而,受到XPS限制,無法偵測小尺寸的接合墊,一 般只能偵測約2GG微米(以m ) ’此對於現今半導體製 尺寸縮小化的趨勢而言,已不符合需求。另一方面,由於 需破壞晶圓而無法線上自動作業且需損失晶圓,導致木 增加及生產能力(throughput )的降低。 有鑑於此,本發明提供一種接合墊表面之自動龄 統,適用於具有至少一接合墊之晶圓,包括··一平二^ 土 減弱全反射一紅外光譜儀(ATR-IR)、一對準輔助^ 一主機以及一自動傳送裝置。其中,以高靈敏度的^r—ir 取代XPS來偵測小尺寸接合墊且無需破壞晶圓,可 低成本及提高生產能力。 發明概述: 本發明之目的在於提供一種接合墊表面之自動於 統,藉由一減弱全反射—紅外光譜儀來偵測小尺ς1瓿 之表面潔淨度。 # 口塾1300253 V. Invention Description (2) $, then the joint pad part. Next, the test piece was placed on a X-ray photoelectron Spectr〇sc〇py (xps) for detection analysis. However, due to XPS limitations, it is not possible to detect small-sized bond pads, and generally only detect about 2 GG micrometers (in m). This is not in line with the current trend toward shrinking semiconductors. On the other hand, due to the need to damage the wafer, it is impossible to automatically work on-line and the wafer needs to be lost, resulting in an increase in wood and a decrease in throughput. In view of the above, the present invention provides an automatic ageing system for a bonding pad surface, which is suitable for a wafer having at least one bonding pad, including a flat-diode reduction total reflection-infrared spectrometer (ATR-IR), and an alignment aid. ^ A host as well as an automatic transfer device. Among them, the high sensitivity of ^r-ir replaces XPS to detect small-sized bonding pads without destroying the wafer, which can reduce the cost and increase the production capacity. SUMMARY OF THE INVENTION: It is an object of the present invention to provide an automated system for the surface of a bond pad that utilizes a reduced total reflection-infrared spectrometer to detect surface cleanliness of a small ruler. #口塾
本發明之另一目的在於提供一種接合墊表面之 測方法,以線上自動偵測接合墊,且不需破壞晶 ς 加生產能力及降低成本。 j曰 根據上述之目的,本發明提供一種接合墊表面之 監測系統,適用於具有至少一接合墊之晶圓,包括·一平Another object of the present invention is to provide a method for measuring the surface of a bonding pad to automatically detect the bonding pad on the line without damaging the throughput of the wafer and reducing the cost. In accordance with the above objects, the present invention provides a monitoring system for a bonding pad surface suitable for wafers having at least one bonding pad, including
13002531300253
台,用以放置晶圓 測接合塾表面之潔 置,設置於晶圓上 全反射一紅外光譜 反射一紅外光譜儀 準輔助裝置而將接 測位置,且接收及 送裝置,耦接於主 又根據上述之 動監測方法,適用 包括下列步驟:藉 上,其中此平台具 達,以將欲偵測之 弱全反射一紅外光 外光譜儀偵測接合 及藉由該主機來處 度。 淨度 方, 儀; 以及 合墊 處理 機, 目的 於線 由一 有一 減弱全 並輸出 以觀察 以及一 對準辅 對準減 資料信 用以將 ,本發 反射一紅外光譜儀 一資料信號; 將接合 麵接於 一對準 晶圓並 主機, 助裝置,用以 弱全反射一紅 號。再者,更包括 晶圓放置及移 明提供 自動傳送裝置 步進馬達;藉 墊經由一對準 之偵測位置; 接合 譜儀 墊表 理此資料信號以獲 面並傳送一資 一種接 少一接 將晶圓 由一主 輔助裝 藉由減 料信號 得接合 墊對準 平台、 驅動平 外光譜 用以偵 辅助裝 於減弱 減弱全 台及對 儀之债 自動傳 離平台。 合墊表面之自 合墊之 傳送至 機驅動步進馬 置對準 弱全反 至該主 墊之表 B曰 圓 一平台 至一減 射一紅 機;以 面潔淨 較佳實施例之詳細說明: 以下配合第1及2圖,說明本發明實施例之接合墊表面 之自動監測系統。 首先,請參照第1圖,其繪示出本發明實施例之接合 墊表面之自動監測系統方塊示意圖,包括:一平台1 〇 2、 一減弱全反射一紅外光谱儀(ATR-IR)i〇4、一對準輔助裝a table for placing a wafer to measure the surface of the bonding surface, a total reflection on the wafer, an infrared spectrum reflection, an infrared spectrometer quasi-auxiliary device, and a receiving position, and the receiving and sending device, coupled to the main The method for monitoring the motion includes the following steps: borrowing, wherein the platform is configured to detect the joint of the weak total reflection-infrared external spectrometer to be detected and to be used by the host. The clarity side, the instrument; and the pad handler, the purpose of the line is to reduce the total output and to observe and to align the auxiliary alignment to reduce the data credit, the present reflection reflects an infrared spectrometer-data signal; Connected to a wafer and host, auxiliary device for weak total reflection of a red number. Furthermore, the wafer placement and the illuminating provide an automatic transfer device stepping motor; the pad is detected by an alignment; the spectroscopy pad is used to receive the data signal to obtain the surface and transmit one to the other. The wafer is connected to the platform by a main auxiliary device by means of a reduction signal to obtain a bonding pad, and the driving external spectrum is used for detecting and assisting the weakening of the whole station and the automatic transfer of the instrument to the platform. The transfer of the self-closing pad on the surface of the pad to the machine drive stepping the horse to the weak all-in-one to the table B of the main pad to a platform to a reduction of a red machine; the details of the surface cleaning preferred embodiment The automatic monitoring system for the surface of the bonding pad according to the embodiment of the present invention will be described below with reference to FIGS. 1 and 2. First, please refer to FIG. 1 , which is a block diagram showing an automatic monitoring system for a surface of a bonding pad according to an embodiment of the present invention, comprising: a platform 1 〇 2, a reduced total reflection-infrared spectrometer (ATR-IR) i〇 4, an alignment aid
0503-6975TWF(N) *. TSMC2001-0753 ; spin.ptd 第 6 頁 13002530503-6975TWF(N) *. TSMC2001-0753 ; spin.ptd Page 6 1300253
^106、一主機1〇8以及一自動傳送裝置11〇。在本實施例 中,平台102係用以放置晶圓100 ’且平台1〇2具有一步進 =達(未繪示),以在平台102上任意移動晶圓1〇〇之位 置。其中,晶圓1 〇〇表面上具有複數個待偵測觀察之銅接 合墊(未繪示)。接著,減弱全反射〜紅外光譜儀 UTR-IRM04,耦接於主機1〇8,用以偵測銅接合墊表面之 潔淨度並輸出一資料信號Di至主機1〇8。接.下來,對準輔 助裝置106,例如一光學顯微鏡(〇M),設置於晶圓1〇〇上 方’以觀察晶圓1 〇 〇並將接合墊對準於減弱全反射—紅外 光譜儀(ATR-IR)l〇4。再者,主機108耦接於平台1〇2、減 弱全反射一紅外光譜儀(atr—ir)1〇4以及光學顯微鏡(〇M )106,用以驅動平台1〇2上的步進馬達及光學顯微鏡(〇M )1 0 6而將接合塾對準於減弱全反射_紅外光譜儀 (ATR-IR)104之偵測位置,且接收及處理資料信號h。其 中’主機108具有一圖案辨識軟體,用以配合光學顯微鏡 (OM ) 1 0 6進行對準作業。另外,自動傳送裝置1丨〇,例如 一機械手臂(robot),同樣耦接於主機1〇8,用以將晶圓 100放置及移離平台102。 接下來’請參照第2圖,其繪示出第1圖中以減弱全反" 射一紅外光譜儀(4了1^11〇1〇4進行接合墊11(^偵測之剖面 示意圖。當平台(未繪示)將晶圓1 00上待偵測之銅接合 墊10 0a移至減弱全反射一紅外光譜儀(ATR—IR)1〇4之偵測 位置後’由光源發射裝置1 0 4 a發射一紅外光I至偵測裝置 10 413之鏡面(未繪示),再折射至銅接合墊1〇〇&表面並在^106, a host 1〇8 and an automatic transfer device 11〇. In this embodiment, the platform 102 is used to place the wafer 100' and the platform 1〇2 has a step = up (not shown) to arbitrarily move the wafer 1 on the platform 102. The wafer 1 has a plurality of copper bonding pads (not shown) to be observed on the surface. Then, the total reflection-infrared spectrometer UTR-IRM04 is coupled to the host 1〇8 to detect the cleanliness of the copper bond pad surface and output a data signal Di to the host 1〇8. Next, an auxiliary device 106, such as an optical microscope (〇M), is placed over the wafer 1' to observe the wafer 1 and align the bonding pads with attenuated total reflection-infrared spectrometer (ATR) -IR) l〇4. Furthermore, the host 108 is coupled to the platform 1, 2, a total reflection-infrared spectrometer (atr-ir) 1〇4, and an optical microscope (〇M) 106 for driving the stepper motor and optics on the platform 1〇2. The microscope (〇M) 1 0 6 is used to align the junction 于 to the detection position of the attenuated total reflection _IR spectrometer (ATR-IR) 104, and to receive and process the data signal h. The 'host 108' has a pattern recognition software for alignment with an optical microscope (OM) 106. In addition, an automatic transfer device, such as a robot, is also coupled to the host 1 8 for placing and removing the wafer 100 from the platform 102. Next, please refer to Figure 2, which shows a schematic diagram of the cross-section of the bonding pad 11 in the first picture to reduce the all-inverse & ray-infrared spectrometer (4. 1^11〇1〇4. The platform (not shown) moves the copper bonding pad 10 0a to be detected on the wafer 100 to the detection position of the weakened total reflection-infrared spectrometer (ATR-IR) 1〇4 by the light source emitting device 1 0 4 a emits an infrared light I to the mirror surface (not shown) of the detecting device 10 413, and then refracts to the surface of the copper bonding pad 1 〇〇 &
0503-6975TWF(N) ; TSMC2001-0753 ; spin.ptd 第7頁 1300253 五、發明說明(5) 此表面上造成全反射而使紅外光I進入偵測裝置丨〇 4b。如 此一來,高靈敏度的減弱全反射一紅外光譜儀 (ATR-IR)l〇4可偵測銅接合墊i〇〇a表面是否遭到污染而產 生氧化物及氮化物。 以下配合第3圖說明本發明實施例之接合墊表面之自 動監測方法’適用於線上(i n-丨i ne )監測晶圓上之接合 塾〇 請參照第3圖,其繪示出第丨圖中接合墊表面之自動監 測步驟程序圖。首先,依步驟8丨〇,藉由自動傳送裝置 110,例如機械手臂,將晶圓10〇傳送至平台102上,其中 平台102具有一步進馬達來移動晶圓1〇〇的位置。接下來, 依步驟S20,藉由主機1 〇8驅動步進馬達,以將晶圓丨〇〇上 欲偵測之銅接合墊經由一對準輔助裝置1〇6,例如光學顯 微鏡(OM),對準至一減弱全反射—紅外光譜儀(ATR—ir) 104之偵測位置。隨後,依步驟§3〇,藉由減弱全反射—紅 外光譜儀(ATR-IR)i〇4偵測此銅接合墊表面,並將偵測結 果以一資料信號以傳送至主機108。最後,依步驟§4(),藉 由主,108來處理資料信號!^以獲得此接合墊之表面潔淨 度。若銅接合墊表面遭受污染而使潔淨度無法通過時,依 步驟S50 ’藉由機械手臂11〇將平台1〇2的晶圓1〇〇取出,以 便進打清潔銅接合墊表面之步驟,若潔淨度通過 步驟S60 ’由機械手臂11〇將晶圓1〇〇退出,以進行德、 程。當然,由於整個晶圓丨〇〇具有許多的銅接合墊,因、 可重複對準及偵測兩步驟直至測完所有待偵測之鋼接合0503-6975TWF(N) ; TSMC2001-0753 ; spin.ptd Page 7 1300253 V. Description of the invention (5) This surface causes total reflection to cause infrared light I to enter the detecting device 丨〇 4b. As a result, the high-sensitivity attenuated total reflection-infrared spectrometer (ATR-IR) l〇4 detects the presence or absence of contamination of the surface of the copper bond pad i〇〇a to produce oxides and nitrides. Hereinafter, the automatic monitoring method for the surface of the bonding pad according to the embodiment of the present invention will be described with reference to FIG. 3, which is suitable for the bonding on the wafer (i n-丨i ne ). Please refer to FIG. 3, which shows the third drawing. The program diagram of the automatic monitoring step of the surface of the bonding pad in the figure. First, in accordance with step 8, the wafer 10 is transferred to the platform 102 by an automated transfer device 110, such as a robotic arm, wherein the platform 102 has a stepper motor to move the wafer 1 turn. Next, in step S20, the stepping motor is driven by the host 1 〇8 to connect the copper bonding pad to be detected on the wafer via an alignment aid 1〇6, such as an optical microscope (OM). Align to a detected position of a reduced total reflection-infrared spectrometer (ATR-ir) 104. Subsequently, the surface of the copper bond pad is detected by attenuating the total reflection-infrared spectrometer (ATR-IR) i〇4 according to step §3, and the detection result is transmitted to the host 108 by a data signal. Finally, according to step §4(), the data signal is processed by the main, 108! to obtain the surface cleanliness of the bonding pad. If the surface of the copper bonding pad is contaminated and the cleanliness cannot pass, the step of removing the wafer 1 of the platform 1〇2 by the robot arm 11〇 in step S50', in order to clean the surface of the copper bonding pad, if The cleanliness is exited by the robot arm 11〇 in step S60' to perform the German and the process. Of course, since the entire wafer cassette has many copper bonding pads, the two steps can be repeated and detected until all the steel joints to be detected are measured.
1300253 五、發明說明(6) 墊。另一方面,上述實施例雖以銅接合墊作範例,麸 ^明並未受限於此’只要ATR-IR 1G4可偵測到之金屬'材本 質’以此金屬製成之接合墊皆可適用於本發明。 由於ATR-IR 104靈敏度高’所以小的接合墊的 ,如25到_ _,仍可精準地谓測到接合墊寸’ J。相較於習知使用XPS而言,非常符合現 二: 電路元件尺寸縮小化的趨勢。另一方 積體 圓作破片處理,因此本發明之監測系統可::將晶 f i且不會造成晶圓的損失。亦即,根據本發明可有: 低成本及提高生產能力。 I月了有政降 雖然本發明已以較佳實施例揭露如上 、 限定本發明,任何熟習此項技藝者,在盼‘、、丨其並非用以 神和範圍内,當可作更動與潤飾,因此$離本發明之精 當視後附之申請專利範圍所界定者為準。X明之保護範園1300253 V. Description of invention (6) Pad. On the other hand, although the above embodiment uses a copper bonding pad as an example, the bran is not limited to this. As long as the ATR-IR 1G4 can detect the metal 'material essence', the bonding pad made of the metal can be used. Suitable for use in the present invention. Due to the high sensitivity of the ATR-IR 104, the small bond pads, such as 25 to _ _, can still accurately measure the bond pad size. Compared with the conventional use of XPS, it is very consistent with the current trend: the size of circuit components is shrinking. The other integrated body is fragmented, so the monitoring system of the present invention can:: crystallize and not cause wafer loss. That is, according to the present invention, there are: low cost and improved productivity. Although the present invention has been disclosed above in the preferred embodiments, the present invention is not limited to the scope of the present invention, and is intended to be modified and retouched. Therefore, it is subject to the definition of the patent application scope of the present invention. X Mingzhi Protection Fanyuan
1300253 圖式簡單說明 懂,為了讓本發明之上述目的、特徵、和優點能更明顯易 下文特舉出較佳實施例,並配合所附圖式,作詳細說 明如下: 第1圖係繪示出根據本發明實施例之接合墊表面之自 動i测系統方塊示意圖。 _ ,2圖係繪不出第丨圖中以減弱全反射—紅外光譜儀進 订接合塾偵測之剖面示意圖。 第3圖係繪示出第丨圖中接合墊表面之自動監 程 序圖。The above-mentioned objects, features, and advantages of the present invention will become more apparent from the detailed description of the preferred embodiments of the invention. A block diagram of an automatic i-test system for the surface of a bond pad in accordance with an embodiment of the present invention. The _ and 2 diagrams do not depict the cross-section of the map in order to reduce the total reflection-infrared spectrometer. Figure 3 is a diagram showing the automatic monitoring of the surface of the bond pad in the figure.
示意Γ。圖係繪示出潔淨度不佳之接合墊打線失效之剖面 [符號說明] 、20 0a〜接合墊; 100、200〜晶圓; 1 0 2〜平台; 1 0 4〜減弱全反射—紅外光譜; 104b〜偵測裝置; 1 08〜主機; 2 0 0 b〜氧化物; Di〜資料信號。Show Γ. The figure shows the profile of the joint failure of the poorly cleaned bonding pad [symbol description], 20 0a~ bonding pad; 100, 200~ wafer; 1 0 2~ platform; 1 0 4~ weakened total reflection - infrared spectrum; 104b ~ detection device; 1 08 ~ host; 2 0 0 b ~ oxide; Di ~ data signal.
l〇4a〜光源發射裝置 106〜對準辅助裝置; 110〜自動傳送裝置; 202〜金屬接線;L〇4a~light source emitting device 106~alignment auxiliary device; 110~automatic transfer device; 202~metal wire;
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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TW091109596A TWI300253B (en) | 2002-05-08 | 2002-05-08 |
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