TWI293798B - Wafer carrying apparatus - Google Patents

Description

1293¾ wf.doc/006 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體製程設備，且特別是有關 於一種用於乾式蝕刻反應室中的晶圓承载裝置。 【先前技術】 在半導體製程中，為了清除半導體晶圓上的矽氧化物 或金屬氧化物，以降低接觸阻抗，並增加晶圓表面的平坦 程度，於製造過程中，多半會以氬氣為電漿的來源，進行 • -乾式蝕刻製程。 習知設置於電漿蝕刻反應室中的晶圓承載裝置，是由 • 絕緣盤與鐵盤所組成的，其中，鐵盤是埋設於此絕緣盤中， ” 而晶圓即放置於鐵盤上，並覆蓋住鐵盤與絕緣盤之交&處。 在電漿蝕刻製程中，離子轟擊通常是以垂直方向，均 勻地入射於晶圓的表面，不過在晶圓的邊緣，則會吸引密 度較大的離子以非垂直角度入射。由於晶圓承載裝置中的 絶緣盤，其邊緣為一彎曲的轉折(c〇mer)，因此，在離子的 ❿絲下往往容S造成絕緣盤損傷，而產生許多不必要的粒 子。絕緣盤受損的結果，其使用壽命將會縮短許多，增加 成本的支出而且這些粒子的生成還可能會導致晶圓受 到污染，降低製程的良率。 除此之外，為了避免這些粒子污染晶圓，平均每钱刻 2_片的晶圓之後，就必須對乾式_反應室進行定期維 修㈣odic maintenance)、清洗，不但降低機台的利用率㈣ time)，也會延宕整個製程所需花費的時間。 5BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a semiconductor process apparatus, and more particularly to a wafer carrier for use in a dry etching reaction chamber. [Prior Art] In the semiconductor process, in order to remove the germanium oxide or metal oxide on the semiconductor wafer to reduce the contact resistance and increase the flatness of the wafer surface, most of the manufacturing process will be argon gas. The source of the slurry, • • Dry etching process. The wafer carrier device disposed in the plasma etching reaction chamber is composed of an insulating disk and an iron plate, wherein the iron plate is buried in the insulating plate, and the wafer is placed on the iron plate. And cover the intersection of the iron plate and the insulating plate. In the plasma etching process, ion bombardment is usually perpendicular to the surface of the wafer, but at the edge of the wafer, the density is attracted. Larger ions are incident at a non-perpendicular angle. Due to the insulative disk in the wafer carrier, the edge is a curved turn. Therefore, under the entanglement of the ion, the insulating disk is damaged by S. Many unnecessary particles are produced. As a result of the damage of the insulating disk, the service life will be shortened, the cost will be increased, and the generation of these particles may cause contamination of the wafer and reduce the yield of the process. In order to prevent these particles from contaminating the wafer, after the average of 2 wafers per wafer, regular maintenance (4) odic maintenance and cleaning of the dry_reaction chamber must be performed, which not only reduces the utilization of the machine (4) Ie) will also delay the time required for the entire process.

Claims (1)

1293¾. doc/006 96-11-19 十、申請專利範圓·· 1· 一種晶圓承载裝置，設置於一 用以承載—晶圓，該晶圓承載裝置至少^括χ·反應至中’ 緣盤，軸緣盤具有1槽，以及環繞該凹槽之 /導體構件，置於該凹槽中；以及 ，絕緣環，覆蓋及突出於該凸出部頂面，12933⁄4. doc/006 96-11-19 X. Applying for a patent circle··1· A wafer carrier device is provided for carrying a wafer, and the wafer carrier device is at least χ·reacting to the middle a rim disk having a slot, and a conductor member surrounding the groove, disposed in the groove; and an insulating ring covering and protruding from the top surface of the protrusion 其中該導體構件的頂面高於該絕緣盤的頂部，且該 艨構件的頂面不高於該絕緣環的頂面。 人 2· t申請專利範圍第1項所述之晶圓_裝置，豆中 該絕緣環的表面為一平面。 ^ ’、 3如申請專利範圍第！項所述之晶圓承載裝置，其中 該晶圓係置於魏緣環上，該__内徑不大於如: 的i狡。 、β 4.如申凊專利範圍第1項所述之晶圓承载裴置，J:中 該絕緣環圍繞該導體構件。 "Wherein the top surface of the conductor member is higher than the top of the insulating disk, and the top surface of the dam member is not higher than the top surface of the insulating ring. The wafer_device described in the first paragraph of the patent application, the surface of the insulating ring is a plane. ^ ‘, 3 as claimed patent scope! The wafer carrier device of claim 1, wherein the wafer is placed on a rim ring, and the __ inner diameter is not greater than i 如. 4. The wafer carrying device of claim 1, wherein the insulating ring surrounds the conductor member. " 5·如申請專利範圍第i項所述之晶圓承 苴 該絕緣環的材質包括陶瓷。 6·如申請專利範圍第1項所述之晶圓承载枣置，J:中 該導體構件的材質包括鈦。 、 7·如申請專利範圍第1項所述之晶圓承载裝置，其中 该導體構件由下而上包括—墊座部（pedestal)與一遮蔽部 (shield)。 、，。 8·如申請專利範圍第7項所述之晶圓承載裝置，其中 115. The wafer carrier as described in item i of the patent application. The material of the insulating ring includes ceramic. 6. The wafer-bearing juxtaposition described in claim 1 of the patent application, wherein the material of the conductor member comprises titanium. The wafer carrier device of claim 1, wherein the conductor member comprises a pedestal and a shield from bottom to top. ,,. 8. The wafer carrier device of claim 7, wherein 11 96-11-19 該墊座部的材質包括鈦。 9.如申請專利範圍第7項所述之晶圓承載裝置，其中 該遮蔽部的材質包括不銹鋼。 10·如申請專利範圍第1項所述之晶圓承載裝置，其中 該絕緣盤的材質包括陶究。96-11-19 The material of the pedestal includes titanium. 9. The wafer carrying device of claim 7, wherein the material of the shielding portion comprises stainless steel. 10. The wafer carrier device of claim 1, wherein the material of the insulating disk comprises ceramics. 12 1293798 _丨丨月曰修(更)正本 16520TW_T12 1293798 _丨丨月曰修(more)本本16520TW_T 圖1 1293798 16520TW—TFigure 1 1293798 16520TW-T