TWI293112B - An underwater acoustic micro-sensor - Google Patents

Description

1293112 九、發明說明： 【电明所屬之技術領域】 本發明係有關一種水下聲響微感測器之裝置，係使用 微機電製程之面型加工技術製作該感測ϋ結構。該感測器 ^感測薄膜結構於接受接近該結構自然振頻之特定頻率 範圍的聲波時，該感測器輪出訊號具有高訊雜比的特性， 以此接收水下聲波所傳遞之訊號内容。 【先前技術】 、微機電系統之研究係結合了傳統的電子、電機、機 Τ、生醫、控卿領域之知識與半導”造技賴發展出 來的微型感測器與致動器系統。對於各領域之應用而言， 感測糸統的微小化，且右、、点g 敫㈣旦八有雜負载、縮小佔用面積、降低 二_里抽耗仏點。因此，將微機電系統運用於感測器 上，不但可使得❹〗賴_小錢 .對可隨之提高，且祕費的取，、财㈣ 、卜…A 貝幻月匕里亦較低；此外，並可配合 半導體技術製造出-陣列式感測器。 雖然目前業界以微機電系統所研發 當的多元’其應用範圍亦相當廣之α I已、、“目 田項/之，但是，盘皮下枯撤相 關之微感測器之研發卻相當缺乏。 /、 有鑑於此，本案發明人累穑 驗，精心研究，研種開射務上之經 器，以習知之壓力感測器為基礎境之聲《測 程技術與水下聲學技術之水下聲/、、冑結合微機電製 卑曰城感測器。此水下量測1293112 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to an apparatus for an underwater acoustic micro-sensor, which is fabricated using a surface processing technique of a micro-electromechanical process. The sensor ^ senses the structure of the film when receiving sound waves in a specific frequency range close to the natural frequency of the structure, the sensor wheel signal has a high signal-to-noise ratio characteristic, thereby receiving the signal transmitted by the underwater sound wave content. [Prior Art] The research department of MEMS combines the traditional micro-sensor and actuator system developed by the knowledge and semi-guided technology of electronics, motor, machine, biomedical and control. For applications in various fields, the miniaturization of the sensing system, and the right, the point g 敫 (four) eight have a mixed load, reduce the occupied area, reduce the second _ 抽 抽 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 On the sensor, not only can make ❹ 赖 _ _ small money. The pair can be improved, and the secret fee is taken, the wealth (four), the Bu... A sci-fi month is also lower; in addition, and can be combined with semiconductor technology Manufactured-array-type sensors. Although the current industry has developed a multi-micro-electromechanical system, its application range is quite wide, and it has a wide range of applications. The development of sensors is quite lacking. In view of this, the inventor of this case has been exhausted, carefully researched, and researched on the open-air device, using the well-known pressure sensor as the basis of the sound of the range technology and underwater acoustic technology. Sound /, 胄 combined with micro-electromechanical despicable city sensor. This underwater measurement

CKU-P060054-TW 6 1293112 技術之結合，相信將帶給水下量測技術突破 【發明内容】 之面本么明之主要目的，旨在提供一種結合微機電製程 哭，、ft加工技術與水下聲學技術之水下聲響微感測 聲響微感測i。成本低讀度〶、精確、耗能低之水下CKU-P060054-TW 6 1293112 The combination of technology, I believe that will bring the underwater measurement technology breakthrough [invention content] The main purpose of this book is to provide a combination of micro-electromechanical process crying, ft processing technology and underwater acoustics The underwater sound of the technology is micro-sensing sound micro-sensing i. Low cost, low accuracy, low energy consumption

勹人為達上述之目的，本發明之感測器結構如圖一所示， 二了 ：下結構:一組壓阻、-組導線電路、-絕緣㈣^ 感測薄膜，以及一防水薄膜。其中， 你/ [阻、、且’係以多晶石夕為材料，並離子佈植侧離子， =寸性顯現。該壓阻組係以四個壓阻為一組，其 :w兩個位於薄縣構兩歉感測端壓阻 ::=變而改變-及兩個未設置在薄膜結構上:For the purpose of the above, the sensor structure of the present invention is as shown in FIG. 1, and the following structure: a lower structure: a set of piezoresistive, a group conductor circuit, an insulation (four) ^ sensing film, and a waterproof film. Among them, you / [resistance, and] is made of polycrystalline stone eve, and ion implanted side ions, = inch appearance. The piezoresistive group is a group of four piezoresistors, which: w two in the thin county structure apologizes the sensing end of the piezoresistive ::= change and change - and two are not set on the film structure:

，導線電路組，係以金為導線材料，連接四個壓阻組 電橋電路。於該電財包含㈣接點，分成兩 二::―，為外加_之輸入端與接地端，另-對為感 測器电壓訊號之輸出端。 =絕緣材料’係以氮切為材料，其位於壓阻以及金 ίΓ方阻料導電之單㈣基底，避免短路。 料，;^測賴’係直接使用作為基底之單轉晶片為材 〜正面先將薄膜外型溝槽㈣j完成，接著再將該晶The wire circuit group is made of gold as a wire material and connected to four piezoresistive group bridge circuits. The electricity contains four (4) contacts, which are divided into two:: ―, which is the input terminal and the ground terminal of the external _, and the other pair is the output terminal of the sensor voltage signal. = Insulation material is made of nitrogen cut, which is located on the single (4) substrate of piezoresistive and conductive materials to avoid short circuit. The material is used to directly use the single-rotation wafer as the substrate. The front surface is first formed by the film-shaped groove (4), and then the crystal is further

CKU-P060054-TW 1293112 = 崎袖版靡刻製 槿，㈣七 構。該薄膜之外^為細長型之結 ;=ίΓ模態單純化，且該薄膜之左右兩側寬度較 :U牙之_外型溝槽’用以降低結構勁度與自 D振頻。 U該防水薄膜，係沉積於該感測器外層，其中該防水薄 膜係為-聚對二甲苯基（Parylene)層，用以避免水氣侵 入該感測器，以符合水下操作環境。CKU-P060054-TW 1293112 = Kawasaki version engraved 槿, (4) seven structures. The outer surface of the film is a slender type; the Γ Γ mode is simplistic, and the width of the left and right sides of the film is smaller than that of the U-shaped groove of the U tooth to reduce the structural stiffness and the self-D vibration frequency. U The waterproof film is deposited on the outer layer of the sensor, wherein the waterproof film is a layer of Parylene to prevent moisture from entering the sensor to conform to the underwater operating environment.

於設計光罩時需考慮到晶片空間的限制以及感測器 的功忐性，因此在設計晶片上感測器的配置時，除了單一 感測器放入單一個測試晶片之外，如圖二所示，另外設計 了同時配置兩個、四個感測器在單一測試晶片上。除了可 增加感測器數量以及降低單位成本之外，配置四個感測器 的測試晶片更將四個感測薄膜設計成不同長度，使其具有 不同共振頻率提升感測晶片的運用效能。 【實施方式】 茲為便於貴審查委員能更進一步對本發明之構 造、使用及其特徵有更深一層，明確、詳實的認識與瞭解， 發明人舉出數個較佳之實施例，並配合圖式詳細說明如 下： 圖三與圖四詳細地描述了本發明的主要製造方法及 結構。茲說明如下·· 圖三為本發明之微感測器之製程流程圖，其中該感測When designing the reticle, the limitation of the wafer space and the power of the sensor should be considered. Therefore, when designing the sensor on the wafer, except for a single sensor placed in a single test wafer, as shown in Figure 2 As shown, two and four sensors are simultaneously configured on a single test wafer. In addition to increasing the number of sensors and reducing unit cost, test wafers with four sensors design four sensing films of different lengths, giving them different resonant frequencies to enhance the performance of the sensing wafer. [Embodiment] In order to facilitate the examination committee to further understand, understand and understand the structure, use and characteristics of the present invention, the inventors cite several preferred embodiments, with detailed drawings The description is as follows: The main manufacturing method and structure of the present invention are described in detail in FIG. 3 and FIG. The following is a description of the process flow chart of the micro sensor of the present invention, wherein the sensing

CKU-P060054-TWCKU-P060054-TW

Claims (1)

1293112 y年&月α日修(更)正替換頁 ， 、申請專利範園： ------- 1 · 一種運用於k 人· 、水下壤境之聲響微感測器，其結構包 含· 、、且[阻，係以多晶矽為材料，並以離子佈植使 [阻特性顯現，以四個壓阻為一組，· 、、且V線電路，係連接該四個壓阻組成惠斯敦電 f7路，該電路中包含四個接點； 絶緣材料，係位於該壓阻及金屬導線下方，用 以阻絕可導電之單晶矽基底； 、感測薄m ’係使用作為基底的單晶矽晶片為材 料其外型為細長型之結構；以及 防水薄膜，係沉積於該感測器外層。 2·如專利申請範圍第1項所述之感測器，其中該壓 已έ兩個位於薄膜結構兩侧之感測端壓阻，其 • 阻值隨著薄臈結構形變而改變；以及兩個未設置 在该薄膜結構上阻值固定的壓阻。 3 ·如專利申請範圍第1項所述之感測器，其中該導 =連接四個壓阻組成惠斯敦電橋電路，該電路包 含四個接點，係分成兩對，一對為外加電壓之輸 入端與接地端，另一對為感測器電壓訊號之輸出 端0 CKU-P060054-TW 15 1293112 年f月(7日修i更)正替換頁 4·如專利申請範圍第1 ^兩述之感測器，其中該感 測薄膜結構之外型為細長型，左右兩側寬度較 窄’且周圍具蝕穿之薄膜外型溝槽。 5 ·如專利申晴範圍第1項所述之感測器，其中該壓 J1且係以叾朋離子佈植。 6·如專利申請範圍第1項所述之感測器，其中該導 線電路係以金為材料。 7·如專利申請範圍第1項所述之感測器，其中該絕 緣材料係為氮化矽化合物。 8·如專利申請範圍第1項所述之感測器，其中該防 水薄膜係以聚對二甲苯基（Parylene )材料所構成。 9.如專利申請範圍第2項所述之感測器，其中該壓 阻係採用感應耦合式電漿離子蝕刻系統（ICP)蝕刻 成形。 · 1〇·如專利申請範圍第1項所述之感測器，其中該感 ’則薄膜係採用背後蝕刻方法製作出適當厚度的薄 膜結構，使其振動模態單純化。 CKU-P060054-TW 16 1293112 &月〇 U於.¾)正替换頁I 11·如專利申請範圍第10項所述之感測器，其中該感 測薄膜之蝕刻區域包含一使薄膜結構懸浮所開的 I虫刻孔與便利晶片分離之切割道。 12·如專利申請範圍第1〇項所述之感測器，其中該背 後蝕刻方法係為蝕刻至該感測薄膜一半厚度時， 以光阻覆蓋切割道，用以避免使該感測薄膜因薄 膜強度不足而破裂。 13·—種運用於水下環境之聲響微感測器，其結構包 含： —組壓阻’係以四個壓阻為一組； —組導線電路，係連接四個壓阻組成惠斯敦電橋 電路； —絕緣材料，係位於該壓阻以及金屬導線下方， 阻絕可導電之單晶矽基底， · 、感測薄膜，係直接使用作為基底的單晶矽晶片 為材料，其外型為細長型之結構；以及 一防水薄膜，係沉積於該感測器之外層；· 其中，該感測薄膜係以背後蝕刻的方式精確蝕刻 至疋厚度，該厚度的感測薄膜在接受接近自然 振頻範圍的聲波時，能輸出高訊雜比的訊號。 CKU-P060054-TW 17 1293112 曰修(更)正^ 14·一可運用於水下環境之聲變與 法，其步驟包含：響糊器的製造方 沉積氮化梦於一單晶梦基底； 沉積多晶矽於該氮化矽層上 阻材料； 曰上並佈植離子做成魔 蝕刻該多晶矽薄膜’以形成該壓阻的外形· 沉積金並姓刻成金導線於該多晶秒薄膜;以 該壓阻組成惠斯敦電橋電路； 以反應式離子㈣（RIE)清除多餘的氮化石夕； 蝕刻該單晶矽正面薄膜外型溝槽； ， 以背後_方式’製作出適當厚度的薄膜結構； 以及沉積-聚對二甲苯基（Parylene)防水層。 15.如專利申凊範圍第14項所述之製造方法，於該背 後蝕刻步驟前，更包含一將薄膜表層研磨之步 驟，以避免背後蝕刻過深造成的雜草現象與蝕刻 底面的曲度過大。 CKU-P060054-TW 18 1293112 Ό Sweep Frequency LIE-8- n nc n 1 ncr o -- spn:ljQ.£y UJrM:p<D:dsx.9M0d1293112 y year & month alpha repair (more) is replacing page, patent application garden: ------- 1 · A sound micro sensor for k people, underwater soil, its The structure includes ·, and [resistance, which is made of polycrystalline germanium, and is ion-implanted to make [resistance characteristics appear, and four voltage resistances are used as a group, and the V-line circuit connects the four piezoresistives. Forming the Wheatstone electric f7 road, the circuit contains four contacts; the insulating material is located under the piezoresistive and metal wires to block the conductive single crystal germanium substrate; and the sensing thin m' is used as The single crystal germanium wafer of the substrate is a material whose shape is an elongated structure; and a waterproof film is deposited on the outer layer of the sensor. 2. The sensor of claim 1, wherein the pressure has two sensing end-resistances on both sides of the film structure, the resistance value of which changes with the deformation of the thin structure; Piezoresistors that are not fixed in the structure of the film are fixed. 3. The sensor of claim 1, wherein the conduction=connecting four piezoresistives constitutes a Wheatstone bridge circuit, the circuit comprising four contacts, which are divided into two pairs, one pair being added The input terminal of the voltage and the ground terminal, and the other pair is the output terminal of the sensor voltage signal. 0 CKU-P060054-TW 15 1293112 year f month (7 days repair i) is replacing page 4 · as patent application scope 1 ^ The sensor of the above description, wherein the sensing film structure is of an elongated shape, the width of the left and right sides is narrower, and the outer film groove is etched around the periphery. 5. The sensor of claim 1, wherein the pressure is J1 and is implanted with a sputum ion. 6. The sensor of claim 1, wherein the wire circuit is made of gold. 7. The sensor of claim 1, wherein the insulating material is a tantalum nitride compound. 8. The sensor of claim 1, wherein the water-repellent film is made of a parylene material. 9. The sensor of claim 2, wherein the piezoresistive is etched using an inductively coupled plasma ion etching system (ICP). 1. The sensor of claim 1, wherein the film is formed by a back etching method to form a film structure of a suitable thickness to simplify the vibration mode. C 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The opened I-worm hole is cut with a convenient wafer. 12. The sensor of claim 1, wherein the back etching method is to cover the dicing line with a photoresist when etching to a half thickness of the sensing film to avoid causing the sensing film to be The film is not strong enough to break. 13·—A kind of acoustic micro-sensor used in underwater environment, the structure of which includes: - group piezoresistive resistance is a group of four piezoresistors; - group conductor circuit is connected with four piezoresistive components to form Whisttown The bridge circuit; the insulating material is located under the piezoresistive and the metal wire to block the conductive single crystal germanium substrate, and the sensing film is directly used as a substrate of the single crystal germanium wafer as a material, and the shape thereof is a slender structure; and a waterproof film deposited on the outer layer of the sensor; wherein the sensing film is precisely etched to the thickness of the crucible by back etching, the thickness of the sensing film is close to natural vibration When the sound wave of the frequency range is used, the signal of the high signal ratio can be output. CKU-P060054-TW 17 1293112 曰修 (more) 正^ 14·A sound change method that can be applied to underwater environments, the steps of which include: the deposition of the paste maker is nitrided on a single crystal dream base; Depositing polycrystalline germanium on the tantalum nitride layer to block the material; arranging and implanting ions to form the polycrystalline tantalum film 'to form the shape of the piezoresistive layer · depositing gold and surging a gold wire on the polycrystalline second film; Piezoresistive composition of the Wheatstone bridge circuit; removal of excess nitrite by reactive ion (IV) (RIE); etching of the single-crystal 矽 front film outer groove; , forming a film structure of appropriate thickness in a back_mode And a deposited-Parylene waterproof layer. 15. The manufacturing method according to claim 14, wherein before the etching step, a step of grinding the surface of the film is further included to avoid the weed phenomenon caused by the deep etching behind and the curvature of the underside of the etching. is too big. CKU-P060054-TW 18 1293112 Sw Sweep Frequency LIE-8- n nc n 1 ncr o -- spn:ljQ.£y UJrM:p<D:dsx.9M0d .0k5,0k.0k5,0k 10,0k10,0k 15.0k 20,0k 25.0k frequency15.0k 20,0k 25.0k frequency Pfoto I ' «Pfoto I ' « 35.0k 40.0k 45.0k 六35.0k 40.0k 45.0k six Iropency(lfe) 量七 23' CKU-P060054-TWIropency(lfe) Volume seven 23' CKU-P060054-TW