TWI291763B - Gray tone mask and method for manufacturing the same - Google Patents
Gray tone mask and method for manufacturing the same Download PDFInfo
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- TWI291763B TWI291763B TW094123355A TW94123355A TWI291763B TW I291763 B TWI291763 B TW I291763B TW 094123355 A TW094123355 A TW 094123355A TW 94123355 A TW94123355 A TW 94123355A TW I291763 B TWI291763 B TW I291763B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims description 294
- 239000000758 substrate Substances 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 5
- 230000008439 repair process Effects 0.000 claims description 4
- 241000282320 Panthera leo Species 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 11
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 33
- 239000013589 supplement Substances 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 238000004380 ashing Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002609 anti-worm Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
- G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
1291763 九、發明說明： 【發明所屬之技術領域】 本發明有關於適合於使用在薄膜電晶體液晶顯示裝置 (Thin Film Transistor Liquid Crystal Display)之製造 所使用之薄膜電晶體基板（以下稱為TFT基板）之灰階罩幕 之製造方法。 【先前技術】1291763 IX. Description of the Invention: [Technical Field] The present invention relates to a thin film transistor substrate (hereinafter referred to as a TFT substrate) which is suitable for use in the manufacture of a Thin Film Transistor Liquid Crystal Display (hereinafter referred to as a TFT substrate) ) The method of manufacturing the gray scale mask. [Prior Art]
TFT-LCD當與 CRT(陰極射線管）比較時，具有容易成為 薄型和低消耗電力之優點，所以現在急速地朝向商品化進 步。T F T - L C D所具有之概略構造是在被排列成為矩陣狀之 各個圖素，排列T F T，在此種構造之T F T基板，與各個圖 素對應地，使排列有紅色、綠色和藍色之圖素圖案之彩色 濾光片，重疊在液晶相之下。在 TFT-LCD，製造步驟數變 多，即使只是TFT基板，製造時亦需使用5〜6片之光罩。 在此種狀況下，提案有使用4片之光罩進行TFT基板之 製造之方法，亦即利用2種膜厚之光抗蝕劑圖案之方法用 來減少光刻步驟數。 例如，在專利文獻1中所揭示者其所具有之步驟使用： 在源極電極和汲極電極之間（通道部）具有第1厚度之光抗 蝕劑；具有比第1厚度之第2厚度之光抗蝕劑；和具有比 第1厚度薄之第3厚度（包含厚度為零）之光抗蝕劑。 另外，在專利文獻1，用以形成具有該2種膜厚之光抗 蝕劑圖案之方法，揭示有2種方法，亦即，（1 )使用具有透 光部、遮光部和半透光部之灰階罩幕方法，和（2 )利用抗蝕 326\專利說明書(補件)\94-11\94123355 6When compared with a CRT (Cathode Ray Tube), the TFT-LCD has an advantage of being easy to be thin and low in power consumption, and is now rapidly progressing toward commercialization. The TFT-LCD has a schematic structure in which pixels are arranged in a matrix, and TFTs are arranged. In the TFT substrate having such a structure, pixels of red, green, and blue are arranged corresponding to the respective pixels. A patterned color filter that overlaps the liquid crystal phase. In the TFT-LCD, the number of manufacturing steps is increased, and even if it is only a TFT substrate, it is necessary to use a photomask of 5 to 6 sheets at the time of manufacture. Under such circumstances, a method of manufacturing a TFT substrate using four photomasks, that is, a method of using two kinds of film thickness photoresist patterns, has been proposed to reduce the number of photolithography steps. For example, the method disclosed in Patent Document 1 has a step of: using a first thickness of photoresist between the source electrode and the drain electrode (channel portion); and having a second thickness than the first thickness a photoresist; and a photoresist having a third thickness (including a thickness of zero) thinner than the first thickness. Further, Patent Document 1 discloses a method for forming a photoresist pattern having the two film thicknesses, and discloses two methods, that is, (1) using a light transmitting portion, a light blocking portion, and a semi-light transmitting portion. Grayscale mask method, and (2) using resist 326\patent specification (supplement)\94-11\94123355 6
1291763 劑之逆流使抗蝕劑變形之方法。 ^ 上述之灰階罩幕是利用比使用有罩幕之曝光裝 '像度小之圖案，例如利用縫隙或格子形態之圖案， 成半透光部，或是設置半透光膜，用來調節光之照 方法，在半透光膜之情況，不完全除去遮光性鉻層 使其殘留一定之厚度，用來減少通過該部份射入之 射量。 圖 8 ( a )之實例是以與源極電極和沒極電極對應 作為遮光部 2 0 4，以與該等之間之通道部對應之區 縫隙形狀之半透光部2 0 3，圖8 ( b )之實例是利用半 形成與上述通道部對應之區域。 專利文獻1所記載之以與通道部對應之區域作為 部之灰階罩幕，稱為先前技術例1。 另外一方面，T F T基板之製造方法之另一實例， 被揭示在專利文獻2，所使用之TFT基板之製造方 有使用灰階罩幕之方法和利用逆流使抗蝕劑變形之1291763 The method of counter-flowing the agent to deform the resist. ^ The above-mentioned grayscale mask is a pattern that is smaller than the exposure using a mask, such as a pattern of slits or lattices, a semi-transparent portion, or a semi-transparent film for adjustment. In the case of a semi-transparent film, the light-shielding chromium layer is not completely removed to a certain thickness, and the amount of radiation incident through the portion is reduced. An example of Fig. 8(a) is a semi-transmissive portion 2 0 3 which is a light-shielding portion 205 corresponding to the source electrode and the electrodeless electrode, and has a slit shape corresponding to the channel portion between the electrodes, Fig. 8 An example of (b) is to form a region corresponding to the above-described channel portion by a half. The gray scale mask which is a portion corresponding to the channel portion described in Patent Document 1 is referred to as the prior art example 1. On the other hand, another example of the method of manufacturing the TF T substrate is disclosed in Patent Document 2, in which the TFT substrate used is manufactured by using a gray scale mask and deforming the resist by backflow.
下面使用圖9用來說明被記載在專利文獻2之方 實例。 如圖9 ( a )所示，在玻璃基板1 0 1上形成閘電極1 玻璃基板1 0 1上，形成覆蓋在閘電極1 0 2之閘絕緣； 在閘絕緣膜1 0 3上，順序地沈積和疊層矽膜1 0 4， 1 0 5，和金屬膜1 0 6。 其次，在金屬膜1 0 6上塗佈正型之光抗蝕劑，用 326\專利說明書(補件)\94-11 \94123355 置之解 用來形 射量之 ，而是 光之照 之區域 域作為 透光部 半透光 例如 ， 法組合 方法之 法之一 02，在 K 1 03， n +矽膜 來形成 1291763 抗姓劑膜1 Ο 7，如圖9 ( b )所示，經由灰階罩幕 ‘劑膜1 0 7照射曝光之光。圖1 0是灰階罩幕之平 、部2 0 4形成對應到鄰接源極電極和汲極電極之 通道部之區域，源極電極和汲極電極之其餘部 部2 0 3形成’在源極電極和〉及極電極之間之通 部2 0 5形成。 其次，當對曝光後之正型之光抗蝕劑進行顯 蝕劑圖案1 0 7 a部份大多不會溶解，成為殘留， 案1 0 7 b部份具有某種程度之溶解，其他之部份 成為變無。其結果如圖9 ( c )所示，可以同時形 之厚抗蝕劑圖案1 0 7 a，和膜厚較薄之薄抗蝕劑 其次，以厚抗蝕劑圖案1 0 7 a和薄抗蝕劑圖| 罩幕，進行蝕刻，如圖9 ( d )所示，在矽膜1 0 4 性接觸層1 0 5 a、1 0 5 b和源極電極1 0 6 a、汲極 在形成電阻性接觸層 1 0 5 a、1 0 5 b之後，利 抗蝕劑圖案1 0 7 a和薄抗蝕劑圖案1 0 7 b逆流。 I式，有機樹脂之各個抗蝕劑圖案在矽膜1 0 4之 在電阻性接觸層 1 0 5 a和電阻性接觸層 1 0 5 b 1 0 4上，連接厚抗蝕劑圖案1 0 7 a和薄抗蝕劑圖 圖9 ( e)和圖1 1之平面圖所示，形成逆流抗蝕I 另外，圖9(e)表示圖11之x-x剖面圖。 其次，以逆流抗蝕劑圖案1 0 8作為罩幕，蝕 膜1 0 4，除去逆流抗蝕劑圖案1 0 8，藉以獲得在 形成有電阻性接觸層1 0 5 a、1 0 5 b和源極電極 326\專利說明書(補件)\94-11\94123355 8 2 Ο 1對抗蝕 面圖。遮光 對向部份之 份由半透光 道部由透光 影時’厚抗 薄抗蝕劑圖 全部溶解， 成膜厚較厚 圖案107b 。 I 1 0 7 b作為 上形成電阻 電極1 0 6 b 〇 用加熱使厚 利用此種方 平面擴散， 之間之矽膜 案1 0 7 b，如 N圖案1 0 8。 刻和除去砍 半導體島上 10 6a、汲極 1291763 電極1 Ο 6 b之狀態（圖中未顯示）。然後，形成鈍化膜，在源 極電極1 0 6 a、>及極電極1 0 6 b上分別形成接觸孔，藉以形 -成在該等之接觸孔底部連接到源極電極 1 0 6 a之圖素電 極，和連接到汲極電極1 0 6 b之端子部電極（圖中未顯示）。 專利文獻2所記載之除了源極電極和汲極電極之對向部 份外之區域成為半透光部之灰階罩幕稱為先前技術例2。 [專利文獻1 ] 日本專利特開2 0 0 0 - 1 6 5 8 8 6號公報 [專利文獻2 ] 日本專利特開2 0 0 2 - 2 6 1 0 7 8號公報Next, an example of being described in Patent Document 2 will be described using FIG. As shown in FIG. 9( a ), the gate electrode 1 is formed on the glass substrate 110 on the glass substrate 110, and the gate insulating layer covering the gate electrode 102 is formed; on the gate insulating film 103, sequentially Deposit and laminate the enamel film 1 0 4, 1 0 5, and the metal film 1 0 6 . Next, apply a positive type photoresist on the metal film 106, and use the 326\patent specification (supplement)\94-11 \94123355 to solve the shape of the amount of light, but the area of the light. The field is translucent as a light transmissive portion, for example, one of the methods of the combined method 02, in K 1 03, n + 矽 film to form 1291763 anti-surname film 1 Ο 7, as shown in Figure 9 (b), via ash Step mask 'agent film 1 0 7 irradiation exposure light. Fig. 10 is a flat portion of the gray scale mask, and a portion corresponding to the channel portion adjacent to the source electrode and the drain electrode is formed, and the remaining portions of the source electrode and the drain electrode are formed at the source The pole electrode and the junction between the pole electrode and the pole electrode are formed. Secondly, when the exposed photoresist of the positive type is exposed, the portion of the resist pattern is mostly dissolved and becomes a residue, and the portion of the case 10 7 b has a certain degree of dissolution. The share becomes no change. As a result, as shown in FIG. 9(c), a thick resist pattern of 10 7 a can be simultaneously formed, and a thin resist having a thin film thickness, followed by a thick resist pattern of 10 7 a and a thin resist. Etch pattern | mask, etched, as shown in Figure 9 (d), in the 矽 film 104 contact layer 1 0 5 a, 1 0 5 b and source electrode 1 0 6 a, the formation of the drain After the resistive contact layer 1 0 5 a, 1 0 5 b, the resist pattern 1 0 7 a and the thin resist pattern 1 0 7 b are reversed. In the formula I, the respective resist patterns of the organic resin are connected to the thick resist pattern 1 0 7 on the resistive contact layer 1 0 5 a and the resistive contact layer 1 0 5 b 1 0 4 of the tantalum film 104. a and the thin resist are shown in Fig. 9 (e) and the plan view of Fig. 11. The reverse flow resist I is formed. Further, Fig. 9(e) is a cross-sectional view taken along line xx of Fig. 11. Next, the counter-current resist pattern 1 0 8 is used as a mask to etch the film 104, and the reverse-flow resist pattern 1 0 8 is removed to obtain a resistive contact layer 1 0 5 a, 1 0 5 b and Source electrode 326\Patent specification (supplement)\94-11\94123355 8 2 Ο 1 pair of anti-corrosion patterns. The light-shielding portion is partially dissolved by the semi-transmissive portion from the light-transmissive thick-thick resist pattern, and the thick film pattern 107b is formed. I 1 0 7 b is formed as a resistor electrode 1 0 6 b 〇 by heating to make a thickness using this square plane, between the 矽 film case 1 0 7 b, such as the N pattern 1 0 8 . Engraving and removing the state of the semiconductor island 10 6a, bungee 1291763 electrode 1 Ο 6 b (not shown). Then, a passivation film is formed, and contact holes are formed on the source electrode 10 6 a, the electrode electrode 1 0 6 b, respectively, thereby forming a connection to the source electrode 1 0 6 a at the bottom of the contact holes. The pixel electrode and the terminal electrode (not shown) connected to the drain electrode 1 0 6 b. The gray-scale mask in which the region other than the opposing portions of the source electrode and the drain electrode is a semi-transmissive portion described in Patent Document 2 is referred to as the prior art example 2. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-166-86-A Publication No. JP-A No. 2 0 0 2 - 2 6 1 0 7 8
(發明所欲解決之問題） 如上述先前技術例2所記載之方式，除了源極電極和汲 極電極之對向部份外之區域成為半透光部，此種灰階罩幕 因為半透光部之佔用面積變大，所以利用比使用罩幕之曝 光裝置之解像度小之微細圖案形成半透光部，不能獲寬廣 範圍之高精細度之微細圖案，在半透光部，均一之透過率 分布會劣化為其問題。 Φ 因此，當假想以半透光膜形成半透光部時，考慮使用圖 1 2所示之構造。 圖1 2 ( A )所示之灰階罩幕2 0 0是遮光部由半透光膜和形 成在其上之遮光膜構成之構造（以下稱為先前技術構造例 A )。先前技術構造例A之灰階罩幕可以利用圖1 4所示之方 法製造（以下稱為先前技術製造例A)。 亦即，首先設置順序形成有半透光膜2 1 2和遮光膜2 1 3 之罩幕毛胚（mask blank)214(參照圖14(a))。 9 326\專利說明書(補件)\94-11\94123355 1291763 其次，在罩幕毛胚2 1 4上，例如塗佈電子射線或雷射描 ‘繪用之正型抗蝕劑，進行烘烤，用來形成抗蝕劑膜2 1 5 (參 •照圖1 4 ( b ))。其次，使用電子射線描繪機或電射描繪機等 進行描繪。描繪後使其顯影，用來在罩幕毛胚上形成抗蝕 劑圖案2 1 5 a (參照圖1 4 ( c ))。 其次，以所形成之抗蝕劑圖案 2 1 5 a作為罩幕，對遮光 膜2 1 3進行蝕刻，然後蝕刻半透光膜2 1 2。其餘之抗蝕劑 圖案2 1 5 a利用氧之灰化或使用濃硫酸等加以除去（參照圖(Problem to be Solved by the Invention) As described in the above-described prior art example 2, the region other than the opposite portions of the source electrode and the drain electrode becomes a semi-transmissive portion, and the gray scale mask is semi-transparent. Since the occupied area of the light portion is increased, the semi-transmissive portion is formed by a fine pattern having a smaller resolution than that of the exposure device using the mask, and a wide range of high-definition fine patterns cannot be obtained, and the semi-transmissive portion is uniformly transmitted. The rate distribution will degrade as a problem. Φ Therefore, when it is assumed that the semi-transmissive portion is formed by the semi-transmissive film, the configuration shown in Fig. 12 is considered. The gray-scale mask 200 shown in Fig. 1 2 (A) is a structure in which the light-shielding portion is composed of a semi-transmissive film and a light-shielding film formed thereon (hereinafter referred to as a prior art structural example A). The gray scale mask of the prior art configuration example A can be manufactured by the method shown in Fig. 14 (hereinafter referred to as prior art manufacturing example A). That is, first, a mask blank 214 in which the semi-transmissive film 2 1 2 and the light-shielding film 2 1 3 are formed is sequentially formed (refer to FIG. 14( a )). 9 326\Patent specification (supplement)\94-11\94123355 1291763 Next, on the mask blank 2 1 4, for example, coated with an electron beam or a laser-type positive resist for baking Used to form a resist film 2 1 5 (see Figure 14 (b)). Next, drawing is performed using an electron beam drafter or an electric plotter. After development, it is developed to form a resist pattern 2 1 5 a on the mask blank (see Fig. 14 (c)). Next, the mask film 2 1 3 is etched using the formed resist pattern 2 1 5 a as a mask, and then the semi-transmissive film 2 1 2 is etched. The remaining resist pattern 2 1 5 a is removed by ashing with oxygen or using concentrated sulfuric acid or the like (refer to the figure).
14(d)) ° 其次，再度在全面塗佈上述抗蝕劑，用來形成抗蝕劑膜 2 1 6 (參照圖1 4 ( e ))。然後，進行第2次之描繪。在描繪後 使其進行顯影，用來形成抗蝕劑圖案2 1 6 b，藉以形成遮光 膜圖案（參照圖1 4 ( f ))。其次，以所形成之抗蝕劑圖案2 1 6 b 作為罩幕，利用蝕刻除去露出之半透光膜上之遮光膜。利 用此種方式，遮光部被晝分為半透光部，用來形成半透光 部和遮光部（參照圖 1 4 ( g ))。然後，使用氧灰化等除去殘 Φ留之抗蝕劑圖案（參照圖1 4 ( h ))。 在上述之先前技術製造例 A，在如圖 1 4 ( g )所示之遮光 膜之蝕刻時，對於遮光膜之蝕刻，底層之半透光膜需要具 有耐性。因此，遮光膜和半透光膜需要選擇蝕刻特性不同 之材料之組合，材料選擇之範圍受到限制為其問題。 其次，在圖1 2 ( B )所示之灰階罩幕，遮光部由遮光膜和 位於其上之半透光膜形成（以下稱為先前技術構造例 B )。 先前技術構造例B之灰階罩幕可以利用圖1 5所示之方法製 10 326\專利說明書(補件)\94-11\94123355 1291763 造（以下稱為先前技術製造例B - 1 )。 ‘ 亦即，首先，在透明基板2 1 1上，設置使形成有遮光膜 • 2 1 3之罩幕毛胚2 2 4 (參照圖1 5 ( a ))。 其次，在該罩幕毛胚2 2 4上塗佈例如雷射或電子射線描 繪用之正型抗蝕劑，進行烘烤，用來形成抗蝕劑膜 215。 其次，使用電子射線描繪機或雷射描繪機等進行描繪。描 繪後使其進行顯影，用來在罩幕毛胚上形成與遮光部和被 遮光部包夾之半透光部對應之第1抗蝕劑圖案2 1 5 a (參照14(d)) ° Next, the resist is completely applied again to form a resist film 2 16 (refer to Fig. 14 (e)). Then, the second drawing is performed. After the drawing, it is developed to form a resist pattern 2 1 6 b, thereby forming a light-shielding film pattern (refer to Fig. 14 (f)). Next, the formed resist pattern 2 1 6 b is used as a mask, and the light-shielding film on the exposed semi-transmissive film is removed by etching. In this manner, the light shielding portion is divided into semi-transmissive portions for forming the semi-transmissive portion and the light shielding portion (refer to Fig. 14 (g)). Then, the resist pattern remaining in the residual Φ is removed by oxygen ashing or the like (refer to Fig. 14 (h)). In the above-mentioned prior art manufacturing example A, in the etching of the light-shielding film as shown in Fig. 14 (g), the semi-transmissive film of the underlying layer is required to be resistant to the etching of the light-shielding film. Therefore, the light-shielding film and the semi-transmissive film need to select a combination of materials having different etching characteristics, and the range of material selection is limited to the problem. Next, in the gray scale mask shown in Fig. 12 (B), the light shielding portion is formed of a light shielding film and a semi-transmissive film located thereon (hereinafter referred to as a prior art configuration example B). The gray scale mask of the prior art construction example B can be manufactured by the method shown in Fig. 15 (Patent No.), and is made by the method of the invention (hereinafter referred to as the prior art manufacturing example B-1). That is, first, on the transparent substrate 2 1 1 , a mask blank 2 2 4 (see FIG. 15 ( a )) in which a light shielding film 2 1 3 is formed is provided. Next, a positive resist such as a laser or an electron ray is applied onto the mask blank 2 24 and baked to form a resist film 215. Next, drawing is performed using an electron beam scanner or a laser scanner. After the drawing, development is performed to form a first resist pattern 2 1 5 a corresponding to the light-shielding portion and the semi-transmissive portion sandwiched by the light-shielding portion on the mask blank (refer to
圖 15(b))。 其次，以所形成之第1抗蝕劑圖案21 5作為罩幕，對遮 光膜2 1 3進行濕式蝕刻或乾式蝕刻，用來形成與遮光部對 應之圖案2 1 3 a (參照圖1 5 ( c ))。使用氧之灰化或濃硫酸等 除去殘留之抗蝕劑圖案2 1 5 a (參照圖1 5 ( d ))。 其次，在全面形成半透光膜2 1 2 (參照圖1 5 ( e ))。其次， 在半透光膜2 1 2上塗佈抗蝕劑，用來形成抗蝕劑膜2 1 6， 藉以形成半透光膜圖案（參照圖1 5 ( f ))。然後，進行第 2 Φ次之描繪。在描繪後使其顯影，至少形成與半透光部對應 之第2抗蝕劑圖案2 1 6 a (參照圖1 5 ( g ))。 其次，以所形成之抗蝕劑圖案 2 1 6 a作為罩幕，連續地 利用濕式蝕刻或乾式蝕刻除去成為透光部之區域之半透光 膜212和遮光膜213a，用來形成半透光膜圖案212a和遮 光膜圖案2 1 3 b。利用此種方式，半透光部和遮光部被畫分 成為透光部，用來形成半透光部、遮光部和透光部。另外， 使用氧灰化等除去殘留之抗蝕劑圖案（參照圖1 5 ( h ))。 11 326\專利說明書(補件)\94-11\94123355 1291763 依照上述之先前技術製造例B - 1時，半透光部因為在與 _半透光部對應區域露出之透明基板上，直接成膜半透光 •膜，所以在如同先前技術構造例1之形成半透光部之情況 時 不需要利用蝕刻只除去上層之遮光膜使下層之半透光 膜露出，可以利用例如鉻/鉻化合物之蝕刻特性相同或類似 之膜材料 起形成遮光膜和半透光膜，所以膜材料之選 擇之範圍變大。但是，在與通道部對應之透光部之形成， 當對遮光膜和透光膜連續地進行蝕刻時，因為遮光膜和半 透光膜之合計之總膜厚變大，所以要形成圖案之剖面形狀 良好之圖案會有困難。特別是在使用具有反射防止膜之遮 光膜作為遮光膜之情況時，在下層部份和反射防止層之部 份 其蝕刻速度成為不同。在此種情況時，考慮表面反射 防止層，可以控制遮光膜材料或蝕刻條件，使蝕刻遮光膜 時之圖案剖面形狀成為良好，但是要利用與半透光膜之疊 層膜控制會有困難。其結果是不能形成與高精確度之通道 部對應之圖案，當使用在TFT之製造時，會對TFT之性能 造成不良之影響為其問題。 另外，先前技術構造例2之製造方法可以使用下列之圖 1 6所示之方法（以下稱為先前技術製造例B - 2 )。 亦即，在透明基板2 1 1上設置形成有遮光膜2 1 3之罩幕 毛胚2 2 4 (參照圖1 6 ( a ))。 在該罩幕毛胚 塗佈例如雷射或電子射線描繪用之正 型抗蝕劑，進行烘烤，用來形成抗蝕劑膜 21 5。其次，使 用電子射線描繪機或雷射描繪機等進行描繪。描繪後使其 12 326\專利說明書(補件)\94-11\94123355 1291763 顯影，用來在罩幕毛胚上形成與遮光部對應之第1抗蝕劑 圖案2 1 5 a (參照圖1 6 ( b ))。 其次，以所形成之第1抗蝕劑圖案21 5 a作為罩幕，對 遮光膜2 1 3進行濕式蝕刻或乾式蝕刻，用來形成與遮光部 對應之圖案2 1 3 a (參照圖1 6 ( c ))。利用氧之灰化或使用濃 硫酸等除去殘留之抗蝕劑圖案2 1 5 a (參照圖1 6 ( d ))。Figure 15 (b)). Next, the first resist pattern 215 is formed as a mask, and the light-shielding film 213 is subjected to wet etching or dry etching to form a pattern 2 1 3 a corresponding to the light-shielding portion (refer to FIG. (c)). The residual resist pattern 2 1 5 a is removed using oxygen ashing or concentrated sulfuric acid or the like (refer to Fig. 15 (d)). Next, the semi-transmissive film 2 1 2 is formed in an all-round manner (refer to Fig. 15 (e)). Next, a resist is applied on the semi-transmissive film 2 1 2 to form a resist film 2 1 6 to form a semi-transmissive film pattern (refer to Fig. 15 (f)). Then, the second Φth drawing is performed. After the drawing, the image is developed to form at least a second resist pattern 2 1 6 a corresponding to the semi-transmissive portion (see Fig. 15 (g)). Next, using the formed resist pattern 2 1 6 a as a mask, the semi-transmissive film 212 and the light-shielding film 213a which are regions of the light-transmitting portion are continuously removed by wet etching or dry etching to form a semi-transparent film. The light film pattern 212a and the light shielding film pattern 2 1 3 b. In this manner, the semi-transmissive portion and the light-shielding portion are divided into a light-transmitting portion for forming a semi-transmissive portion, a light-shielding portion, and a light-transmitting portion. Further, the residual resist pattern is removed by oxygen ashing or the like (see Fig. 15 (h)). 11 326\Patent Specification (Repair)\94-11\94123355 1291763 According to the prior art manufacturing example B-1 described above, the semi-transmissive portion is directly formed on the transparent substrate exposed in the region corresponding to the semi-transmissive portion. Since the film is semi-transmissive and film-like, it is not necessary to remove only the light-shielding film of the upper layer by etching to expose the semi-transmissive film of the lower layer, as in the case of forming the semi-transmissive portion of the prior art structural example 1, and for example, a chromium/chromium compound can be utilized. The film material having the same or similar etching characteristics forms a light shielding film and a semi-transmissive film, so that the range of selection of the film material becomes large. However, in the formation of the light-transmitting portion corresponding to the channel portion, when the light-shielding film and the light-transmissive film are continuously etched, since the total film thickness of the total of the light-shielding film and the semi-transmissive film becomes large, a pattern is formed. Patterns with good cross-sectional shapes can be difficult. In particular, when a light-shielding film having an anti-reflection film is used as the light-shielding film, the etching speed is different between the lower portion and the anti-reflection layer. In this case, in consideration of the surface reflection preventing layer, the light shielding film material or etching conditions can be controlled to make the pattern cross-sectional shape when etching the light-shielding film good, but it is difficult to control the laminated film with the semi-transmissive film. As a result, it is impossible to form a pattern corresponding to the channel portion of high precision, which is a problem that adversely affects the performance of the TFT when used in the manufacture of the TFT. Further, the manufacturing method of the prior art configuration example 2 can use the method shown in Fig. 16 below (hereinafter referred to as the prior art manufacturing example B-2). That is, a mask blank 2 2 4 in which a light shielding film 2 1 3 is formed is provided on the transparent substrate 2 1 1 (see Fig. 16 (a)). A positive resist such as a laser or an electron beam is applied to the mask blank to be baked to form a resist film 215. Next, drawing is performed using an electron beam scanner or a laser scanner. After drawing, the 12 326\patent specification (supplement) \94-11\94123355 1291763 is developed to form a first resist pattern 2 1 5 a corresponding to the light shielding portion on the mask blank (refer to FIG. 1) 6 (b)). Next, the light-shielding film 213 is wet-etched or dry-etched by using the formed first resist pattern 215 a as a mask to form a pattern 2 1 3 a corresponding to the light-shielding portion (refer to FIG. 1). 6 (c)). The residual resist pattern 2 1 5 a is removed by ashing with oxygen or using concentrated sulfuric acid or the like (refer to Fig. 16 (d)).
其次，在全面形成半透光膜2 1 2 (參照圖1 6 ( e ))。其次， 在半透光膜2 1 2上塗佈抗蝕劑，用來形成抗蝕劑膜2 1 6， 藉以形成半透光膜圖案（參照圖 1 6 ( f ))。然後，進行第 2 次之描繪。在描繪後使其顯影，至少形成與半透光部對應 之第2抗蝕劑圖案2 1 6 a (參照圖1 6 ( g ))。 其次，以所形成之抗蝕劑圖案 2 1 6 a作為罩幕，利用濕 式蝕刻或乾式蝕刻除去成為透光部之區域之半透光膜 2 1 2。利用此種方式，半透光部被晝分為透光部，用來形成 半透光部和透光部。另外，使用氧灰化等除去殘留之抗蝕 劑圖案2 1 6 a (參照圖1 6 ( h ))。 依照上述之先前技術製造例B - 2時，如先前技術製造例 B - 1 之方式，當形成與通道部對應之透光部時，不是連續 地蝕刻半透光膜和遮光膜，而是只蝕刻半透光膜，所以可 以成為圖案之剖面形狀良好之圖案。 但是，在先前技術製造例B - 2中，半透光部之形成和遮 光部之形成需要使用個別之光刻步驟。依照此種方式，在 進行第2次描繪時，以與第1次之描繪不會發生圖案偏差 之方式，進行獲得對準之第2次描繪，但是對準精確度具 13 326\專利說明書(補件)\94-11\94123355 1291763 有一定之限度，要完全沒有對準偏差會有困難。因此，在 以半透光部作為半透光膜之情況時，由於2次描繪之對準 ~偏差等之理由，會有不能獲得良好之圖案之問題。 圖1 3是圖1 2 ( B )之虛線所包圍之部份之擴大圖。圖1 3 ( a ) 是未發生有對準偏差之實例，圖1 3 ( b )和（c )是圖1 3 ( a )之Next, the semi-transmissive film 2 1 2 is formed in an all-round manner (refer to Fig. 16 (e)). Next, a resist is applied on the semi-transmissive film 2 1 2 to form a resist film 2 1 6 to form a semi-transmissive film pattern (refer to Fig. 16 (f)). Then, the second drawing is performed. After the drawing, the image is developed to form at least a second resist pattern 2 1 6 a corresponding to the semi-transmissive portion (see Fig. 16 (g)). Next, the semi-transmissive film 2 1 2 which is a region of the light transmitting portion is removed by wet etching or dry etching using the formed resist pattern 2 1 6 a as a mask. In this manner, the semi-transmissive portion is divided into a light transmitting portion for forming a semi-transmissive portion and a light transmitting portion. Further, the remaining resist pattern 2 1 6 a is removed by oxygen ashing or the like (see Fig. 16 (h)). When the example B-2 is manufactured according to the prior art described above, as in the manner of the prior art manufacturing example B-1, when the light transmitting portion corresponding to the channel portion is formed, the semi-transmissive film and the light shielding film are not continuously etched, but only Since the semi-transmissive film is etched, it is possible to form a pattern having a good cross-sectional shape of the pattern. However, in the prior art manufacturing example B-2, the formation of the semi-transmissive portion and the formation of the light shielding portion require the use of an individual photolithography step. In this way, when the second drawing is performed, the second drawing is performed so that the pattern is not deviated from the first drawing, but the alignment accuracy is 13 326\patent specification ( Replenishment) \94-11\94123355 1291763 There are certain limits, it will be difficult to completely misalign the deviation. Therefore, in the case where the semi-transmissive portion is used as the semi-transmissive film, there is a problem that a good pattern cannot be obtained due to the alignment of the second drawing, the deviation, and the like. Fig. 13 is an enlarged view of a portion surrounded by a broken line of Fig. 1 2 (B). Figure 1 3 ( a ) is an example where no alignment deviation occurs, and Figure 13 (b) and (c) are Figure 13 (a)
半透光部2 0 3和遮光部2 0 4發生有位置偏移之實例。如該 實例之方式，在半透光部發生有左右之位置偏差之情況 時，與通道部對應之透光部2 0 5之幅度會與設計值不同， 產生T F T基板之特性發生變化之問題。依照此種方式，不 能獲得以良好之精確度形成對T F T特別重要之通道部之灰 階罩幕為其問題。 本發明針對上述之問題，其目的是提供灰階罩幕和灰階 罩幕之製造方法，上述先前技術例 2之灰階罩幕之透光 部、遮光部和半透光部在一方向以該順序鄰接，成為具有 此種圖案之灰階罩幕，以良好之半透光部之透過率分布， 良好之與透光部鄰接之遮光部之圖案剖面形狀，提供透光 部之圖案精確度良好之灰階罩幕和灰階罩幕之製造方法。 另外，本發明之目的是提供灰階罩幕和灰階罩幕之製造 方法，在上述先前技術例2之灰階罩幕，亦即在薄膜電晶 體基板’具有.遮光部’形成在與源極電極和〉及極電極對 應之圖案之源極電極和汲極電極之對向部份；半透光部， 形成在源極電極和汲極電極之遮光部以外之部份；和透光 部，形成在包含與通道對應之部份之其他區域；使用在薄 膜電晶體基板之製造步驟，其中具有使至少由上述遮光部 14 326\專利說明書(補件)\94-11\94123355An example in which the semi-transmissive portion 2 0 3 and the light-shielding portion 2 0 4 have a positional shift occurs. As in the case of this example, when there is a positional deviation between the left and right sides in the semi-transmissive portion, the width of the light-transmitting portion 205 corresponding to the channel portion is different from the design value, and the characteristic of the TF T substrate changes. In this way, it is not possible to obtain a gray scale mask which forms a channel portion which is particularly important for T F T with good precision. The present invention is directed to the above problems, and an object thereof is to provide a method for manufacturing a gray scale mask and a gray scale mask, wherein the light transmitting portion, the light shielding portion and the semi-light transmitting portion of the gray scale mask of the prior art example 2 are in a direction The order is adjacent to each other, and the gray-scale mask having such a pattern is provided with a transmittance distribution of a good semi-transmissive portion, and a pattern cross-sectional shape of the light-shielding portion adjacent to the light-transmitting portion is good, and the pattern accuracy of the light-transmitting portion is provided. Good grayscale mask and grayscale mask manufacturing method. In addition, an object of the present invention is to provide a method for manufacturing a gray scale mask and a gray scale mask, which is formed in the gray scale mask of the prior art example 2, that is, in the thin film transistor substrate. The opposite part of the source electrode and the drain electrode of the pattern corresponding to the pole electrode and the > pole electrode; the semi-transmissive portion formed at a portion other than the light shielding portion of the source electrode and the drain electrode; and the light transmitting portion Formed in other regions including portions corresponding to the channels; used in the manufacturing steps of the thin film transistor substrate, having at least the above-mentioned light shielding portion 14 326\patent specification (supplement)\94-11\94123355
1291763 所形成之抗蝕劑圖案變形之步驟，被使用作為灰階罩幕 '以良好之半透光部之透過率分布，提供良好之與通道部 -應之透光部鄰接之遮光部之圖案剖面形狀，和與通道部 應之圖案之圖案精確度良好之灰階罩幕和灰階罩幕之製 方法。 (解決問題之手段） (構造 1 ) 一種灰階罩幕，係具有包含遮光部、透光部 半透光部之圖案者，其特徵在於：上述圖案具有使透光告丨 遮光部和半透光部在一方向依此順序鄰接之圖案，上述 光部疊層有形成遮光部之遮光膜；和半透光膜，其形成 該遮光膜上之與上述透光部之鄰接部之遮光部側所希望 裕區域外之區域。 (構造 2 ) —種灰階罩幕，係使用在薄膜電晶體基板之 造步驟中者，其至少具有：遮光部，其形成在薄膜電晶 基板中之與源極電極和汲極電極對應之圖案之源極電極 汲極電極之對向部份上；半透光部，其形成在源極電極 汲極電極之遮光部以外之部份；和透光部，其對應到與 述遮光部鄰接之通道部；其特徵在於：上述遮光部疊層琴 形成遮光部之遮光膜；和半透光膜，其形成在該遮光膜 之與上述透光部之鄰接部之遮光部側所希望之餘裕區域 之區域。 (構造 3 ) —種灰階罩幕之製造方法，係用以製造灰階 幕之方法，該灰階罩幕具有包含遮光部、透光部和半透 部之圖案，且具有使透光部、遮光部和半透光部在一方 326\專利說明書(補件)\94-11\94123355 15 對 對 造 和 丨、 遮 在 餘 製 體 和 和 上 上 外 罩 光 向 1291763 依該順序鄰接之圖案，其特徵在於具有：準備步驟，在透 、月基板上，準備至少形成有遮光膜之罩幕毛胚；遮光部圖 •案形成步驟，其包含在形成遮光膜圖案用之第1抗蝕劑膜 上描繪及顯影第1描繪圖案，用來形成第1抗蝕劑圖案， 且以該第1抗蝕劑圖案作為罩幕，蝕刻遮光膜之步驟；半 透光膜形成步驟，其在形成有上述遮光部之透明基板上形 成半透光膜；和半透光膜圖案形成步驟，其包含在為了形 成半透光膜圖案而形成於上述半透光膜上之第2抗蝕劑膜 上描繪及顯影第2描繪圖案，用來形成第2抗蝕劑圖案， 且以該第2抗蝕劑圖案作為罩幕蝕刻半透光膜；上述第1 描繪圖案係與上述遮光部對應之圖案，第2描繪圖案係對 應到上述半透光部、和上述遮光部内之至少遮光部與透光 部之鄰接部之遮光部側所希望餘裕區域外之區域。 (構造 4 ) 一種灰階罩幕之製造方法，係使用在薄膜電晶 體基板之製造步驟中者，其至少具有：遮光部，其形成在 薄膜電晶體基板中之與源極電極和〉及極電極對應之圖案之 ί源極電極和汲極電極之對向部份上；半透光部，其形成在 源極電極和汲極電極之遮光部以外之部份；和透光部，其 對應到與上述遮光部鄰接之通道部；該製造方法之特徵在 於具有：準備步驟，其在透明基板上，準備至少形成有遮 光膜之罩幕毛胚；遮光部圖案形成步驟，其包含在形成遮 光膜圖案用之第1抗蝕劑膜上描繪及顯影第1描繪圖案， 用來形成第1抗蝕劑圖案，且以該第1抗蝕劑圖案作為罩 幕蝕刻遮光膜之步驟；半透光膜形成步驟，其在形成有上 16 326\專利說明書(補件)\94-11 \94123355 1291763 述遮光部之透明基板上，形 ‘形成步驟，其包含在為了形 -半透光膜上之第2抗蝕劑膜 用來形成第2抗蝕劑圖案， 幕蝕刻半透光膜；上述第1 之圖案，第2描繪圖案係對 光部内之至少遮光部與透光 餘裕區域外之區域。The step of deforming the resist pattern formed by 1291763 is used as a gray scale mask to provide a good transmittance distribution of the light-transmitting portion adjacent to the light-transmitting portion of the channel portion. The method of making the gray-scale mask and the gray-scale mask with good cross-sectional shape and pattern with the pattern of the channel portion. (Means for Solving the Problem) (Structure 1) A gray-scale mask having a pattern including a light-shielding portion and a light-transmitting portion semi-light-transmitting portion, wherein the pattern has a light-transmitting light-shielding portion and a semi-transparent portion The light portion is adjacent to the pattern in one direction, the light portion is laminated with a light shielding film forming a light shielding portion, and the semi-transmissive film is formed to form a light shielding portion side of the light shielding film adjacent to the light transmitting portion. The area outside the desired area. (Structure 2) A grayscale mask used in a manufacturing step of a thin film transistor substrate, comprising at least a light shielding portion formed in a thin film electromorphic substrate corresponding to a source electrode and a drain electrode a portion of the source electrode of the drain electrode of the pattern; a semi-transmissive portion formed at a portion other than the light-shielding portion of the drain electrode of the source electrode; and a light-transmitting portion corresponding to the light-shielding portion a channel portion, wherein the light shielding portion is formed by a light shielding film that forms a light shielding portion, and a semi-transmissive film is formed on a side of the light shielding portion of the light shielding portion adjacent to the light transmission portion. The area of the area. (Structure 3) A method for manufacturing a grayscale mask, which is a method for manufacturing a grayscale curtain having a pattern including a light shielding portion, a light transmitting portion, and a semipermeable portion, and having a light transmitting portion , the opaque portion and the semi-transmissive portion in a side 326\patent specification (supplement)\94-11\94123355 15 pairs of crepe and crepe, cover the remaining body and upper and upper cover light to 1291763 in the same order The method includes a preparation step of preparing a mask blank having at least a light shielding film formed on the transparent substrate, and a light shielding portion pattern forming step including the first resist for forming the light shielding film pattern a step of drawing and developing a first pattern on the film to form a first resist pattern, and etching the light-shielding film using the first resist pattern as a mask; and a semi-transmissive film forming step in which the film is formed a semi-transmissive film is formed on the transparent substrate of the light shielding portion; and a semi-transmissive film pattern forming step is included on the second resist film formed on the semi-transmissive film to form the semi-transmissive film pattern And developing a second depiction pattern for forming a resist pattern in which the semi-transmissive film is etched by the second resist pattern; the first drawing pattern is a pattern corresponding to the light blocking portion, and the second drawing pattern corresponds to the semi-transmissive portion And an area outside the desired margin area on the side of the light-shielding portion of the adjacent portion of the light-shielding portion and the light-transmitting portion. (Structure 4) A method for manufacturing a gray scale mask is used in a manufacturing step of a thin film transistor substrate, which has at least a light shielding portion formed in a thin film transistor substrate and a source electrode and a gate electrode The electrode corresponds to the opposite side of the source electrode and the drain electrode; the semi-transmissive portion is formed at a portion other than the light shielding portion of the source electrode and the drain electrode; and the light transmitting portion corresponds to a channel portion adjacent to the light shielding portion; the manufacturing method characterized by: a preparation step of preparing a mask blank on which at least a light shielding film is formed on a transparent substrate; and a light shielding portion pattern forming step including forming a light shielding a step of drawing and developing a first pattern on the first resist film for a film pattern, forming a first resist pattern, and etching the light-shielding film with the first resist pattern as a mask; a film forming step on the transparent substrate on which the light-shielding portion of the above-mentioned 16 326\patent specification (supplement) \94-11 \94123355 1291763 is formed, which is formed on the shape-semi-transmissive film Second resist film Forming a second resist pattern, etching a semitransparent film curtain; above the first pattern, the second pattern drawing area based on at least an outer margin of the light-shielding portion and the transparent portion of the light within the region.
幕之方法，該灰階罩幕具有 部之圖案，且具有使透光部 依該順序鄰接之圖案，其特 透明基板上，準備至少疊層 胚；遮光部圖案形成步驟， 第1抗蝕劑膜上描繪及顯影 抗蝕劑圖案，且以該第1抗 β膜之步驟；和半透光膜圖案 半透光膜圖案而形成於上述 描繪及顯影第2描繪圖案， 以該第2抗蝕劑圖案作為罩 描繪圖案係與上述遮光部對 應到上述半透光部、和上述 部之鄰接部之遮光部側所希 (構造 6 ) —種灰階罩幕之 成半透光膜；和半透光膜圖案 成半透光膜圖案而形成於上述 上描繪及顯影第2描繪圖案， 且以該第2抗蝕劑圖案作為罩 描繪圖案係與上述遮光部對應 應到上述半透光部、和上述遮 部之鄰接部之遮光部側所希望 製造方法，係用以製造灰階罩 包含遮光部、透光部和半透光 、遮光部和半透光部在一方向 徵在於具有：準備步驟，其在 有半透光膜和遮光膜之罩幕毛 其包含在形成遮光膜圖案用之 第1描繪圖案，用來形成第1 蝕劑圖案作為罩幕，蝕刻遮光 形成步驟，其包含在為了形成 半透光膜上之第2抗蝕劑膜上 用來形成第2抗蝕劑圖案，且 幕，蝕刻半透光膜；上述第1 應之圖案，第2描繪圖案係對 遮光部内之至少遮光部與透光 望餘裕區域外之區域。 製造方法，係使用在薄膜電晶 17 326\專利說明書(補件)\94-11\94123355 驟 1291763 體基板之製造步驟中者，其至少具有：遮光部，形成在 膜電晶體基板中之與源極電極和沒極電極對應之圖案之 -極電極和汲極電極之對向部份上；半透光部，其形成在 極電極和汲極電極之遮光部以外之部份；和透光部，其 應到與上述遮光部鄰接之通道部；該製造方法之特徵在 具有：準備步驟，其在透明基板上，準備至少疊層有半 光膜和遮光膜之罩幕毛胚；遮光部圖案形成步驟，其包 在形成遮光膜圖案用之第1抗蝕劑膜上描繪及顯影第1 繪圖案，用來形成第1抗蝕劑圖案，且以該第1抗蝕劑 案作為罩幕，蝕刻遮光膜之步驟；和半透光膜圖案形成 其包含在為了形成半透光膜圖案而形成於上述半透 膜上之第2抗蝕劑膜上描繪及顯影第2描繪圖案，用來 成第2抗蝕劑圖案，且以該第2抗蝕劑圖案作為罩幕， 刻半透光膜；上述第1描繪圖案係與上述遮光部對應之 案，第2描繪圖案係對應到上述半透光部、和上述遮光 内之至少遮光部與透光部之鄰接部之遮光部側所希望餘 區域外之區域。 (發明之效果） 依照本發明之灰階罩幕時，透光部、遮光部和半透光 在一方向以該順序鄰接，成為具有此種圖案之灰階罩幕 因為以半透光膜形成半透光部，所以可以獲得半透光部 透過率分布。另外，與透光部鄰接之遮光部，因為只利 遮光膜之蝕刻形成，所以可以獲得與透光部鄰接之遮光 之剖面形狀良好之圖案。另外，因為使上述遮光部成為 326\專利說明書(補件)\94-11\94123355 18 薄 源 源 對 於 透 含 描 圖 步 光 形 I虫 圖 部 裕 部 之 用 部 疊 1291763 層有：遮光膜，形成在遮光部；和半透光膜，形成在該遮 ‘光膜上之與上述透光部鄰接部份之遮光部側所希望餘裕區 -域外之區域；所以可以獲得透光部之圖案精確度良好之灰 階罩幕。 另外，依照本發明之灰階罩幕時，在薄膜電晶體基板具 有：遮光部，形成在與源極電極和汲極電極對應之圖案之 源極電極和汲極電極之對向部份；半透光部，形成在源極 電極和汲極電極之遮光部以外之部份；和透光部，形成在 包含與通道部對應之部份之其他區域；使用在具有該等部 份之薄膜電晶體基板之製造步驟作為灰階罩幕，因為以半 透光膜形成半透光部，所以可以獲半透光部之透過率分 布。另外，因為只利用遮光膜之蝕刻用來形成與透光部鄰 接之遮光部，所以可以獲得與通道部鄰接之遮光部之剖面 形狀良好之圖案。另外，因為使上述遮光部成為疊層有： 遮光膜，形成在遮光部；和半透光膜，形成在該遮光膜上 之與上述透光部鄰接部份之遮光部側之所希望餘裕區域外 >之區域；所以可以獲得與通道部對應之透光部之圖案精確 度良好之灰階罩幕。 另外，依照本發明之灰階罩幕之製造方法時，具有透光 部、遮光部和半透光部在一方向以該順序鄰接之圖案作為 灰階罩幕，因為以半透光膜形成透光部，所以可以獲得半 透光部之透過率分布。另外，與透光部鄰接之遮光部利用 只蝕刻遮光膜形成，所以可以獲得與透光部鄰接之遮光部 之剖面形狀成為良好之圖案。另外，用以形成半透光膜圖 19 326\專利說明書(補件)\94-11\94123355 部 1291763 案之第2描繪資料，成為圖案，對應到半透光部，和 部之至少除了遮光部和透光部之鄰接部之遮光部側所 餘裕區域外之區域，可以製造透光部之圖案精確度良 灰階罩幕。 另外，依照本發明之灰階罩幕之製造方法時，在薄 晶體基板具有：遮光部，形成在與源極電極和汲極電 應之圖案之源極電極和汲極電極之對向部份；半透光 形成在源極電極和汲極電極之遮光部以外之部份；和 形成在包含與通道部對應之部份之其他區域；使 具有該等部份之薄膜電晶體基板之製造步驟，因為以 光膜形成透光部，所以可以獲半透光部之透過率分布 外，與透光部鄰接之遮光部利用只蝕刻遮光膜形成， 可以獲得與通道部鄰接之遮光部之剖面形狀成為良好 案。另外，形成半透光膜圖案用之第2描繪資料，成 案，對應到半透光部，和遮光部之至少除了遮光部和 部之鄰接部之遮光部側所希望餘裕區域外之區域，可 造通道部之圖案精確度良好之灰階罩幕。 【實施方式】 下面利用實施形態來詳細地說明本發明。 圖1是剖面圖，用來表示本發明之實施形態1之灰 幕之T F T基板之源極電極和汲極電極附近之圖案，圖 是圖1之虛線所包圍之部份之擴大圖。 如圖1和圖2所示，在本實施形態中，在石英等之 基板1 1上，在與源極電極和汲極電極之對向部份之通 326\專利說明書(補件)\94-11\94123355 遮光 希望 好之 膜電 極對 部， 透光 用在 半透 。另 所以 之圖 為圖 透光 以製 階罩 2(a) 透明 道部 20 1291763 鄰接之區域，形成遮光膜圖案 1 3 a，在源極電極和汲極電 β極與通道部之鄰接部之上述電極側之餘裕區域 1 7 外之遮 —光膜上之區域和源極電極及汲極電極部，形成半透光膜圖 案1 2 a。亦即，形成在遮光膜圖案1 3 a和餘裕區域1 7外之 遮光膜上之區域之半透光膜圖案12a之疊層部份，成為遮 光部，遮光部以外之形成有半透光膜之區域成為半透光部， 半透光膜12a和遮光膜13a均未形成之區域成為遮光部。 下面使用圖3用來說明製造上述灰階罩幕之方法。In the method of the screen, the gray scale mask has a pattern of portions, and has a pattern in which the light transmitting portions are adjacent in this order, and at least a laminated blank is prepared on the special transparent substrate; a light shielding portion pattern forming step, the first resist a resist pattern is drawn and developed on the film, and the first anti-β film is formed, and the semi-transmissive film pattern semi-transmissive film pattern is formed on the drawing and developing second drawing pattern, and the second resist is formed The pattern of the mask as a mask drawing pattern corresponds to the light-shielding portion of the light-shielding portion and the light-shielding portion of the adjacent portion of the portion (structure 6) - a semi-transparent film of a gray scale mask; and a half The light transmissive film pattern is formed into a semi-transmissive film pattern and formed on the upper drawing and developing second drawing pattern, and the second resist pattern is used as a mask drawing pattern to correspond to the light shielding portion to the semi-transmissive portion. And a desired manufacturing method for the light-shielding portion side of the adjacent portion of the shielding portion, for manufacturing the gray-scale cover, including the light-shielding portion, the light-transmitting portion, and the semi-transmissive portion, the light-shielding portion, and the semi-transmissive portion. a step of having a semi-transparent film and The mask of the light-shielding film is included in the first pattern for forming the light-shielding film pattern, and is used to form the first etching pattern as a mask, and the etching-shielding forming step is included in the second step for forming the semi-transmissive film. a second resist pattern is formed on the resist film, and the semi-transparent film is etched by the curtain; the first pattern is applied, and the second drawing pattern is opposite to at least the light-shielding portion and the light-transmitting region in the light-shielding portion. The area. The manufacturing method is used in the manufacturing process of the thin film electro-crystal 17 326 \ patent specification (supplement) \94-11\94123355 step 1291763 body substrate, which has at least: a light shielding portion formed in the film transistor substrate a source electrode and a counter electrode corresponding to the pattern of the pole electrode and the opposite portion of the drain electrode; a semi-transmissive portion formed in the portion of the electrode and the drain electrode of the drain electrode; a portion corresponding to the channel portion adjacent to the light shielding portion; the manufacturing method characterized by: a preparation step of preparing a mask blank having at least a semi-light film and a light shielding film laminated on the transparent substrate; a pattern forming step of drawing and developing a first pattern on the first resist film for forming a light shielding film pattern for forming a first resist pattern, and using the first resist case as a mask a step of etching the light-shielding film; and forming the semi-transmissive film pattern on the second resist film formed on the semi-transmissive film to form the semi-transmissive film pattern, and developing and developing the second drawing pattern, Forming a second resist pattern and using the second anti- The agent pattern is a mask, and the semi-transmissive film is used; the first drawing pattern corresponds to the light shielding portion, and the second drawing pattern corresponds to the semi-transmissive portion and at least the light-shielding portion and the light-transmitting portion in the light-shielding portion. The area outside the desired remaining area on the side of the light-shielding portion of the adjacent portion of the portion. (Effect of the Invention) According to the gray scale mask of the present invention, the light transmitting portion, the light shielding portion and the semi-transparent light are adjacent in this order in one direction, and the gray scale mask having such a pattern is formed by the semi-transparent film. Since the semi-transmissive portion is provided, a semi-transmissive portion transmittance distribution can be obtained. Further, since the light-shielding portion adjacent to the light-transmitting portion is formed only by etching of the light-shielding film, a pattern having a good cross-sectional shape of the light-shielding adjacent to the light-transmitting portion can be obtained. In addition, since the light-shielding portion is made into a 326\patent specification (supplement)\94-11\94123355, a thin source is formed by a light-shielding film for the layer of the 1291763 layer of the portion of the light-transmissive I-worm pattern. The light-shielding portion and the semi-transmissive film are formed on a portion of the light-shielding film on the side of the light-shielding portion adjacent to the light-transmitting portion outside the desired margin region; therefore, pattern accuracy of the light-transmitting portion can be obtained. Good grayscale cover. Further, according to the gray scale mask of the present invention, the thin film transistor substrate has a light shielding portion formed at an opposite portion of the source electrode and the drain electrode of the pattern corresponding to the source electrode and the drain electrode; a light transmitting portion formed at a portion other than the light shielding portion of the source electrode and the drain electrode; and a light transmitting portion formed in another region including a portion corresponding to the channel portion; used in a thin film electric power having the portion The manufacturing step of the crystal substrate serves as a gray scale mask, and since the semi-transmissive portion is formed by the semi-transmissive film, the transmittance distribution of the semi-transmissive portion can be obtained. Further, since only the light-shielding portion adjacent to the light-transmitting portion is formed by etching using a light-shielding film, a pattern having a good cross-sectional shape of the light-shielding portion adjacent to the channel portion can be obtained. Further, the light-shielding portion is formed by laminating a light-shielding film formed on the light-shielding portion and a semi-transmissive film, and a desired margin region formed on the light-shielding portion side of the light-shielding film adjacent to the light-transmitting portion The area of the outer portion; therefore, a gray scale mask having a good pattern accuracy of the light transmitting portion corresponding to the channel portion can be obtained. In addition, according to the method for manufacturing a gray scale mask according to the present invention, the light-transmitting portion, the light-shielding portion, and the semi-transmissive portion are adjacent to each other in a pattern in this order as a gray scale mask, because the semi-transparent film is formed to be transparent. Since the light portion is obtained, the transmittance distribution of the semi-transmissive portion can be obtained. Further, since the light-shielding portion adjacent to the light-transmitting portion is formed by etching only the light-shielding film, the cross-sectional shape of the light-shielding portion adjacent to the light-transmitting portion can be obtained as a good pattern. In addition, the second drawing material for forming the semi-transmissive film of FIG. 19 326\patent specification (supplement)\94-11\94123355 part 1291763 is a pattern corresponding to the semi-transmissive portion, and at least the shading portion A region outside the margin of the light-shielding portion on the side of the light-shielding portion adjacent to the light-transmitting portion can produce a pattern-accurate good gray-scale mask of the light-transmitting portion. Further, in the method of manufacturing a gray scale mask according to the present invention, the thin crystal substrate has a light shielding portion formed on the opposite side of the source electrode and the drain electrode of the pattern of the source electrode and the drain electrode. a semi-transparent portion formed at a portion other than the light shielding portion of the source electrode and the drain electrode; and other regions formed in a portion including the portion corresponding to the channel portion; manufacturing steps of the thin film transistor substrate having the portions Since the light-transmitting portion is formed by the light film, the light-shielding portion adjacent to the light-transmitting portion can be formed by etching only the light-shielding film, and the cross-sectional shape of the light-shielding portion adjacent to the channel portion can be obtained. Become a good case. Further, the second drawing material for forming the semi-transmissive film pattern is formed to correspond to the semi-transmissive portion, and at least the region outside the desired margin of the light-shielding portion of the adjacent portion of the light-shielding portion and the light-shielding portion. A gray-scale mask with a good pattern of the channel portion. [Embodiment] Hereinafter, the present invention will be described in detail by way of embodiments. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a pattern of a vicinity of a source electrode and a drain electrode of a TF substrate of a gray screen according to a first embodiment of the present invention, and is an enlarged view of a portion surrounded by a broken line in Fig. 1. As shown in Fig. 1 and Fig. 2, in the present embodiment, on the substrate 1 1 such as quartz, the opposite portion of the source electrode and the drain electrode is 326\patent specification (supplement)\94. -11\94123355 Shading hopes that the membrane electrode is good, and the light is used in semi-transparent. In other words, the light-transmissive film pattern 13 3 a is formed in the adjacent region of the transparent mask portion 20 1291763, and the adjacent portion between the source electrode and the drain electrode and the channel portion is formed. The region on the light-shielding film outside the margin region of the electrode side, and the source electrode and the drain electrode portion form a semi-transmissive film pattern 1 2 a. That is, the laminated portion of the semi-transmissive film pattern 12a formed in the region on the light-shielding film outside the light-shielding film pattern 13a and the margin region 17 becomes a light-shielding portion, and a semi-transmissive film is formed other than the light-shielding portion. The region is a semi-transmissive portion, and a region where neither of the semi-transmissive film 12a and the light-shielding film 13a is formed is a light-shielding portion. Next, a method of manufacturing the above-described gray scale mask will be described using FIG.
在本實施形態中，首先，如圖3 ( a)所示，使用在由石英 等構成之主表面大小為 450mm X 550mm之大型透明基板 11 上，形成有例如由C r系材料構成之遮光膜1 3之罩幕毛胚 14° 在該罩幕毛胚上，例如塗佈雷射或電子射線描繪用之正 型抗蝕劑，進行烘烤，形成第1抗蝕劑膜1 5藉以形成遮光 膜圖案（參照圖3 ( b))。其次，使用電子射線描繪機或雷射 描繪機等進行描繪。描繪資料（第1描繪資料）如圖2所示， ®成為與遮光膜圖案1 3 a對應之圖案資料，對應到源極電極 和汲極電極之對向部份之通道部之鄰接區域。在描繪後使 其顯影，用來在罩幕毛胚上形成與遮光部對應之第1抗蝕 劑圖案1 5 a。 另外，在使用有本實施形態之灰階罩幕之TFT基板製造 步驟，與先前技術例2之灰階罩幕同樣地，為著在閘電極 上以指定之間隔形成源極電極和汲極電極，所以需要閘電 極與源極和沒極電極之對準，因此需要在罩幕上設置與閘 21 326\專利說明書(補件)\94-11\94123355 1291763 電極之對準有關之標記（曝光時之位置對準用之標記，位置 4精確度確認用標記等）。在此種情況，使被源極電極和汲極 ••電極包夾之通道部與閘電極正確對準位置成為非常重要， 最好將標記設在光罩之圖案區域外，利用該光罩用來獲源 極電極與形成在汲極電極之最通道側之薄膜圖案之相關 性。在本發明中，源極電極與形成在汲極電極之最通道部 側之薄膜圖案成為遮光膜圖案。因此，在本實施形態中， 在上述步驟，在用以形成遮光膜圖案之描繪資料（第1描繪 資料）包含與閘電極之對準有關之標記，亦可以與遮光膜圖 案之形成同樣地進行標記之形成，在以下之步驟，與遮光 膜圖案同樣地，可以形成由遮光膜構成之標記圖案。 其次，以所形成之第1抗蝕劑圖案1 5 a作為罩幕，對遮 光膜1 3進行濕式蝕刻或乾式蝕刻，用來形成與遮光部對應 之圖案1 3 a (參照圖3 ( c ))。在遮光膜1 3由C r系材料構成 之情況時，濕式蝕刻可以使用例如混合有硝酸鈽銨和過氧 化鹽之稀釋之蝕刻液等，乾式蝕刻可以使用包含有Cl2 + 〇2 等之氯系氣體之乾式蝕刻氣體。殘留之抗蝕劑圖案1 5 a使 用氧之灰化或濃硫酸等加以除去（參照圖3 ( d))。 其次，在全面形成半透光膜 1 2 (參照圖 3 ( e ))。其次， 在半透光膜1 2上塗佈抗蝕劑，用來形成第2抗蝕劑膜1 6 藉以形成半透光膜圖案（參照圖3 ( f ))。然後，進行第2次 之描繪。這時之描繪資料（第2描繪資料）是源極電極和汲 極電極與通道部之鄰接部之上述電極側之餘裕區域 1 7 外 之與源極電極和汲極電極對應之圖案資料。描繪後使其顯 22 326\專利說明書(補件)\94-11\94123355 1291763 影，至少形成與半透光部對應之第2抗蝕劑圖案1 6 a (參照 圖3 (g))。另外，該餘裕區域，考慮到2次描繪之對準精 '"確度，從通道部側起之幅度大於假定之對準偏差。但是， 當餘裕區域變大時，要考慮到由於露出之遮光膜之高光反 射，在罩幕使用時可能成為問題，因為大於需要之程度所 以不好。因此，在本實施形態之情況，最好設定在 0 . 1〜1 // m之範圍。In the present embodiment, first, as shown in FIG. 3(a), a large-sized transparent substrate 11 having a main surface size of 450 mm X 550 mm made of quartz or the like is used, and a light-shielding film made of, for example, a Cr-based material is formed. 1 3 mask blank 14° On the mask blank, for example, a positive resist for laser or electron beam drawing is applied, and baking is performed to form a first resist film 1 5 to form a shading Film pattern (refer to Figure 3 (b)). Next, drawing is performed using an electron beam scanner or a laser scanner. As shown in Fig. 2, the drawing data (first drawing data) is a pattern material corresponding to the light-shielding film pattern 13a, and corresponds to a region adjacent to the channel portion of the opposite portion of the source electrode and the drain electrode. After the drawing, it is developed to form a first resist pattern 15 5 corresponding to the light shielding portion on the mask blank. Further, in the TFT substrate manufacturing step using the gray scale mask of the present embodiment, in the same manner as the gray scale mask of the prior art example 2, the source electrode and the drain electrode are formed at predetermined intervals on the gate electrode. Therefore, the gate electrode is required to be aligned with the source and the electrodeless electrode. Therefore, it is necessary to set a mark on the mask corresponding to the alignment of the gate of the gate 21 326\patent specification (supplement)\94-11\94123355 1291763 (exposure) The position is marked with the mark, the position 4 is used to confirm the mark, etc.). In this case, it is very important to correctly align the channel portion of the source electrode and the drain electrode and the electrode electrode with the gate electrode. It is preferable to set the mark outside the pattern area of the photomask, and use the mask. The correlation between the source electrode and the thin film pattern formed on the most channel side of the drain electrode is obtained. In the present invention, the source electrode and the thin film pattern formed on the most channel portion side of the drain electrode serve as a light shielding film pattern. Therefore, in the present embodiment, in the above-described step, the drawing material (first drawing material) for forming the light shielding film pattern includes the mark relating to the alignment of the gate electrode, and may be performed in the same manner as the formation of the light shielding film pattern. In the formation of the mark, in the following step, a mark pattern composed of a light-shielding film can be formed in the same manner as the light-shielding film pattern. Next, the light-shielding film 13 is wet-etched or dry-etched by using the formed first resist pattern 15 a as a mask to form a pattern 1 3 a corresponding to the light-shielding portion (refer to FIG. 3 (c )). In the case where the light-shielding film 13 is composed of a Cr-based material, for example, an etching solution in which a dilution of ammonium cerium nitrate and a peroxy salt is mixed may be used for the wet etching, and a chlorine containing Cl 2 + 〇 2 may be used for dry etching. A dry etching gas of a gas. The residual resist pattern 15 5a is removed by ashing with oxygen or concentrated sulfuric acid or the like (refer to Fig. 3 (d)). Next, the semi-transparent film 1 2 is formed in an all-round manner (refer to Fig. 3 (e)). Next, a resist is applied on the semi-transmissive film 12 to form a second resist film 16 to form a semi-transmissive film pattern (see Fig. 3(f)). Then, the second drawing is performed. The drawing data (second drawing data) at this time is pattern data corresponding to the source electrode and the drain electrode other than the margin portion 1 7 of the source electrode and the electrode portion adjacent to the channel portion. After drawing, it is shown that the second resist pattern 16 a corresponding to the semi-transmissive portion is formed (see Fig. 3 (g)). In addition, in the margin area, considering the alignment accuracy of the two times of drawing, the amplitude from the side of the channel portion is larger than the assumed alignment deviation. However, when the margin area becomes large, it is considered that the high-light reflection due to the exposed light-shielding film may become a problem when the mask is used, because it is not so good as necessary. Therefore, in the case of this embodiment, it is preferable to set it in the range of 0.1 to 1 // m.
其次，以所形成之第2抗蝕劑圖案1 6 a作為罩幕，利用 濕式或乾式蝕刻除去成為遮光部之區域之半透光膜1 2。利 用此種方式，半透光部被晝分為透光部，用來形成半透光 部和透光部。另外，殘留之抗#劑圖案使用氧灰化等加以 除去（參照圖3 ( h ))。 依照上述之方式完成圖1所示之本實施形態之灰階罩幕 10° 圖2 ( b )和圖2 ( c )之實例是對於圖2 ( a )之理想構造，在 上述方法中，第1描繪圖案之描繪和第2描繪圖案之描繪 β發生有對準偏差之情況，圖2 (b)是對於第1描繪圖案，第 2描繪圖案偏向圖中右側，圖2 ( c )是對於第1描繪圖案， 第2描繪圖案偏向圖中左側之實例。如該等之圖所示，在 本實施形態中之灰階罩幕，第2描繪資料是圖案資料，對 應到源極電極和汲極電極與通道部之鄰接部之上述電極側 之餘裕區域1 7外之源極電極和汲極電極，利用此種方式， 因為在通道部側設置餘裕區域，形成有半透光膜圖案 1 2 a，所以即使發生對準偏差時，與通道部對應之圖案尺寸 23 326\專利說明書(補件)\94-11\94123355 性 1291763 精確度亦不會劣化。 因此，依照本實施態樣時，因為可以以高精確度形 •特性上重要之圖案，所以可以提供高品質之灰階罩 另外，遮光膜 1 3之材質最好使用以薄膜獲得高 者，例如可以使用 C r、S i、W、A1等。另外，遮4 最好在表面或表面和背面具有例如由上述金屬之氧 成之反射防止層，用來使進行雷射描繪時之描繪精 為良好。另外，遮光膜1 3亦可以使用變更成分之多 成分梯度膜，用來順序地調整蝕刻速度，使利用蝕 之剖面形狀成為良好。另外，半透光膜1 2之材質最 當透光部之透過率為1 0 0 %，可以以薄膜獲得透過率 度之半透光性者，例如C r化合物（C r之氧化物、氮 氧氮化物、氟化物等），MoSi、Si、W、A1等。Si、 等是利用其膜厚可以獲得高遮光性，或可以獲得半 之材質。另外，所形成之罩幕之遮光部因為成為半 1 2和遮光膜1 3之疊層，所以即使在遮光膜單獨使 光性不足時，在與半透光膜合作之情況，亦可以獲 另外，在此處之透過率是使用灰階罩幕，例如 LCD用曝光機之曝光之光之波長之透過率。半透光 過率並不一定要限定為 50 %程度。要將半透光部之 設定在何種程度是設計上之問題。 遮光膜1 3和半透光膜1 2之材質可以使用蝕刻特 或類似者，但是當考慮到蝕刻半透光膜時之遮光膜 蝕刻，或形成餘裕區域時之底層之遮光膜之削減時 326\專利說明書(補件)\94-11\94123355 24 成TFT 幕。 遮光性 ^膜 13 化物構 確度成 層膜或 刻形成 好使用 5 0 %程 化物、 W、A1 透光性 透光膜 用，遮 得遮光 對大型 膜之透 透過性 性相同 之側面 ，最好Then, the semi-transmissive film 12 which is a region of the light-shielding portion is removed by wet or dry etching using the formed second resist pattern 16a as a mask. In this manner, the semi-transmissive portion is divided into a light transmitting portion for forming a semi-transmissive portion and a light transmitting portion. Further, the residual anti-agent pattern is removed by oxygen ashing or the like (see Fig. 3 (h)). The gray scale mask of the present embodiment shown in FIG. 1 is completed in the above manner. FIG. 2(b) and FIG. 2(c) are examples of the ideal configuration for FIG. 2(a), in the above method, 1 (b) is a case where the drawing of the pattern and the drawing of the second drawing pattern are misaligned, and FIG. 2(b) shows the second drawing pattern in the first drawing pattern, and the second drawing pattern is shifted to the right side in the drawing, and FIG. 2(c) is for the first 1 depicts a pattern, and the second drawing pattern is biased toward the example on the left side of the figure. As shown in the above figures, in the gray scale mask of the present embodiment, the second drawing material is pattern data, and corresponds to the margin region 1 of the electrode side adjacent to the source electrode and the adjacent portion of the drain electrode and the channel portion. In this way, since the source electrode and the drain electrode are provided in this manner, since the semi-transmissive film pattern 1 2 a is formed on the side of the channel portion, the pattern corresponding to the channel portion is formed even when alignment deviation occurs. Size 23 326\Patent Specification (Repair)\94-11\94123355 Sex 1291763 Accuracy will not deteriorate. Therefore, according to the present embodiment, since a high-precision shape and a characteristically important pattern can be provided, a high-quality gray scale cover can be provided. Further, the material of the light-shielding film 13 is preferably used to obtain a high film, for example, C r , S i , W, A1, etc. can be used. Further, it is preferable that the mask 4 has an antireflection layer made of, for example, oxygen of the above metal on the surface or the surface and the back surface, so that the depiction at the time of laser drawing is excellent. Further, the light-shielding film 13 may use a multi-component gradient film of a modified composition to sequentially adjust the etching rate so that the cross-sectional shape by etching is good. In addition, the material of the semi-transmissive film 12 is most preferably a transmittance of 100% in the light-transmitting portion, and a semi-transmissivity of transmittance can be obtained as a film, for example, a Cr compound (Cr oxide, nitrogen) Oxide, fluoride, etc.), MoSi, Si, W, A1, and the like. Si, etc. can obtain high light-shielding properties by using the film thickness thereof, or can obtain a half material. In addition, since the light-shielding portion of the formed mask is a laminate of the half 12 and the light-shielding film 13, even when the light-shielding film alone is insufficient in light, in cooperation with the semi-transparent film, another The transmittance here is the use of a gray scale mask, such as the transmittance of the wavelength of the light of the exposure of the LCD exposure machine. The semi-transmission rate is not necessarily limited to 50%. The degree to which the semi-transparent portion is to be set is a design problem. The material of the light-shielding film 13 and the semi-transmissive film 12 may be etched or the like, but when the light-shielding film etching is performed in consideration of etching the semi-transmissive film, or the light-shielding film of the underlying layer is formed when the margin region is formed 326 \Patent specification (supplement) \94-11\94123355 24 into the TFT screen. The structure of the light-shielding film 13 is formed into a film or formed by using a 50% process, W, and A1 light transmissive film to cover the side of the large film with the same permeability.
1291763 使用在半透光膜之蝕刻時，遮光膜具有耐性之材料。另夕 ‘要防止上述側面蝕刻或底層之削減時，可以在形成半透 -膜之前，設置餘刻阻擋層。14刻阻擔層可以使用例如S i 或 SOG(Spin on Glass)等。該等之材質具有良好之透 性，即使介入有半透光部，亦不會損及其透過特性，可 不除去。 下面說明本發明之實施形態2。另外，實施形態2是 本發明適用在圖 1 1 ( A )所示之構造之灰階罩幕之製造方 之實例。 本實施形態所使用之罩幕毛胚2 4如圖4 ( a )所示，在 石英構成之主表面之大小為450mmx550mm之大型透明基 1 1上，順序地形成由遮光膜材料和具有蝕刻選擇性之材 構成之半透光膜1 2和例如由鉻系材料構成之遮光膜1 3 上述罩幕毛胚2 4之獲得是在透明基板1 1上順序成膜 透光膜12和遮光膜13，但是成膜方法亦可以適當地選 蒸著法、濺散法、CVD (化學氣相成長）法等適於膜種之 Φ法。另外，對於膜厚沒有特別之限制，但是主要地是以 佳之膜厚形成藉以獲得良好之遮光性或半透光性。 其次，在該罩幕毛胚 2 4上，例如塗佈電子射線或雷 描繪用之正型抗蝕劑，進行烘烤，用來形成第1抗蝕劑 1 5藉以形成遮光膜圖案（參照圖4 ( b))。其次，使用電子 線描繪機或雷射描繪機等進行描繪。描繪資料（第1描繪 料）如圖2所示，成為與遮光膜圖案1 3 a對應之圖案資米 對應到源極電極和汲極電極之對向部份之通道部之鄰接 326\專利說明書(補件)\94-11\94123355 25 光 〇2 過 以 使 法 由 板 料 〇 半 擇 方 最 射 膜 射 資 1291763 域。在描繪後使其顯影，在罩幕毛胚上形成與遮光部對應 之第1抗蝕劑圖案1 5 a (參照圖4 ( b ))。 另外，對於與閘電極之對準有關之標記之形成，在上述 步驟，在用以形成遮光膜圖案之描繪資料（第 1描繪資 料），包含與閘極之對準有關之標記，在半透光膜圖案之形 成之同時，亦進行標記之形成，在其以後之步驟，與半透 光膜圖案同樣地，可以形成由半透光膜構成之標記圖案。1291763 A material in which a light-shielding film is resistant when used in etching of a semi-transparent film. In addition, in order to prevent the above side etching or the reduction of the underlayer, a residual barrier layer may be provided before the formation of the semipermeable film. For the 14-inch resist layer, for example, S i or SOG (Spin on Glass) or the like can be used. These materials have good permeability, and even if the semi-transmissive portion is interposed, the transmission characteristics are not impaired and may not be removed. Next, a second embodiment of the present invention will be described. Further, the second embodiment is an example in which the present invention is applied to the manufacture of the gray scale mask of the structure shown in Fig. 1 1 (A). As shown in Fig. 4 (a), the mask blank 2 4 used in the present embodiment is sequentially formed of a light shielding film material and having etching options on a large transparent substrate 1 having a size of 450 mm x 550 mm on the main surface of the quartz. The semi-transparent film 12 composed of a material and a light-shielding film 13 made of, for example, a chrome-based material are obtained by sequentially forming a transparent film 12 and a light-shielding film 13 on the transparent substrate 11. However, the film formation method may be appropriately selected from a Φ method suitable for a film type such as a vapor deposition method, a sputtering method, or a CVD (Chemical Vapor Growth) method. Further, there is no particular limitation on the film thickness, but it is mainly formed by a good film thickness to obtain good light blocking property or semi light transmittance. Next, on the mask blank 24, for example, a positive resist for electron beam or lightning drawing is applied and baked to form a first resist 1 to form a light shielding film pattern (refer to the figure). 4 (b)). Next, drawing is performed using an electronic line drawing machine or a laser drawing machine. As shown in FIG. 2, the drawing material (first drawing material) is adjacent to the channel portion of the channel portion corresponding to the opposite portion of the source electrode and the drain electrode corresponding to the light shielding film pattern 13 a. (Supplement) \94-11\94123355 25 Light 〇 2 To make the law from the sheet 〇 semi-selected the most film to shoot the 1291763 domain. After the drawing, the image is developed, and a first resist pattern 15a corresponding to the light shielding portion is formed on the mask blank (see Fig. 4(b)). Further, in the step of forming the mark relating to the alignment of the gate electrode, in the above-described step, the drawing material (first drawing material) for forming the light shielding film pattern includes a mark relating to the alignment of the gate, and is semi-transparent. At the same time as the formation of the light film pattern, the marking is formed, and in the subsequent step, a marking pattern composed of the semi-transmissive film can be formed in the same manner as the semi-transmissive film pattern.
其次，以所形成之抗蝕劑圖案1 5 a作為罩幕，對遮光膜 1 3進行乾式蝕刻，形成與遮光部對應之遮光膜圖案1 3 a (參 照圖4 ( c ))。在遮光膜1 3由C r系材料構成之情況時，可 以使用氣氣之乾式蝕刻。與遮光部對應之區域外，利用遮 光膜1 3之蝕刻使底層之半透光膜1 2成為露出狀態。殘留 之抗蝕劑圖案1 5 a利用氧之灰化或使用濃硫酸等加以除去 (參照圖4 ( d ))。 其次，再度在全面塗佈上述抗蝕劑，用來形成第2抗蝕 劑膜1 6 (參照圖4 ( e))。然後，進行第2次之描繪。這時之 描繪資料（第2描繪資料）是圖案資料，對應到圖2所示之 源極電極和汲極電極與通道部之鄰接部之上述電極側之餘 裕區域1 7外之與源極電極和汲極電極。描繪後使其顯影， 用來形成抗蝕劑圖案 1 6 a 藉以形成半透光膜（參照圖 4(f))。另外，該餘裕區域之幅度與實施形態1相同。 其次，以所形成之抗蝕劑圖案1 6 a和遮光膜1 3 a作為罩 幕，利用乾式蝕刻除去成為透光部之區域之半透光膜1 2。 在此種情況，遮光膜圖案1 3 a因為對半透光膜1 2之蝕刻具 26 326\專利說明書(補件)\94-11\94123355 1291763 有耐性，所以半透光膜1 2沿著遮光膜圖案1 3 a被蝕刻。利 _用此種方式，半透光部被晝分為透光部，用來形成半透光 -部和透光部（參照圖4 ( g))。然後，利用氧灰化等除去殘留 之抗蝕劑圖案（參照圖4 ( h ))。 依照上述之方式完成本實施形態之灰階罩幕。Next, the light-shielding film 13 is dry-etched by using the formed resist pattern 15 a as a mask to form a light-shielding film pattern 13 a corresponding to the light-shielding portion (refer to Fig. 4 (c)). In the case where the light-shielding film 13 is composed of a Cr-based material, dry etching of air gas can be used. The semi-transmissive film 12 of the underlayer is exposed to the outside by the etching of the light shielding film 13 outside the region corresponding to the light shielding portion. The residual resist pattern 15 5 a is removed by ashing with oxygen or using concentrated sulfuric acid or the like (refer to Fig. 4 (d)). Next, the above resist is applied again to form the second resist film 16 (see Fig. 4(e)). Then, the second drawing is performed. At this time, the drawing data (second drawing data) is pattern data, and corresponds to the source electrode and the source electrode and the margin portion of the electrode portion of the adjacent portion of the drain electrode and the channel portion shown in FIG. Bottom electrode. After development, it is developed to form a resist pattern 16 6 a to form a semi-transmissive film (refer to Fig. 4 (f)). Further, the margin area is the same as that of the first embodiment. Next, the semi-transmissive film 12 which is a region of the light-transmitting portion is removed by dry etching using the formed resist pattern 16a and the light-shielding film 13a as a mask. In this case, the light-shielding film pattern 1 3 a is resistant to the etching of the semi-transmissive film 12 by the 26 326\patent specification (supplement)\94-11\94123355 1291763, so the semi-transmissive film 12 follows The light shielding film pattern 1 3 a is etched. In this manner, the semi-transmissive portion is divided into a light transmitting portion for forming a semi-transmissive portion and a light transmitting portion (refer to Fig. 4 (g)). Then, the residual resist pattern is removed by oxygen ashing or the like (see Fig. 4 (h)). The gray scale cover of this embodiment is completed in the manner described above.
圖5是圖4之（f )和（g)之虛線所包圍之部份之擴大圖， 對於圖5 ( a )之理想構造，在上述方法中，利用第1描繪圖 案之描繪，和利用第2描繪圖案之描繪發生有對準偏差之 情況之實例，圖5 (b)是對於第1描繪圖案，第2描繪圖案 偏向圖中右側，圖5 (c)是對於第1描繪圖案，第2描繪圖 案偏向圖中左側之實例。如該等之圖所示，在本實施形態 之灰階罩幕中，第2描繪資料是圖案資料，對應到源極電 極和汲極電極與通道部之鄰接部之上述電極側之餘裕區域 1 7外之源極電極和汲極電極，利用此種方式，在通道部側 設置餘裕區域，用來形成第2抗蝕劑圖案1 6 a，所以即使 發生對準偏差，亦不會使與通道部對應之圖案尺寸精確度Fig. 5 is an enlarged view of a portion surrounded by broken lines in (f) and (g) of Fig. 4. For the ideal structure of Fig. 5(a), in the above method, the first drawing pattern is drawn and utilized. (2) An example in which the alignment of the pattern is misaligned is shown in FIG. 5(b), in the first drawing pattern, the second drawing pattern is shifted to the right side in the drawing, and FIG. 5(c) is the first drawing pattern. An example of the left side of the pattern deflection is depicted. As shown in the above figures, in the gray scale mask of the present embodiment, the second drawing material is pattern data, and corresponds to the margin area 1 of the electrode side adjacent to the source electrode and the adjacent portion of the drain electrode and the channel portion. In this way, the source electrode and the drain electrode are provided with a margin region on the side of the channel portion for forming the second resist pattern 16a, so that even if misalignment occurs, the channel is not formed. Part size accuracy
劣化。 另外一方面，圖6係為了比較用，表示在上述方法中， 在第2描繪圖案不設置餘裕區域，成為與源極電極和汲極 電極對應之圖案資料之情況。亦即，對於圖6 ( a )之理想構 造，在上述方法中，利用第1描繪圖案之描繪和利用第2 描繪圖案之描繪發生調整偏差之情況之實例，圖6 ( b )表示 對於第1描繪圖案，第2描繪圖案偏向圖中右側，圖6 (c) 表示對於第1描繪圖案，第2描繪圖案偏向圖中左側之實 27 326\專利說明書(補件)\94-11\94123355Deterioration. On the other hand, Fig. 6 shows a case where the pattern data corresponding to the source electrode and the drain electrode is not provided in the second drawing pattern in the above-described method for comparison. That is, with respect to the ideal structure of Fig. 6(a), in the above method, an example in which the first drawing pattern is drawn and the second drawing pattern is used to cause an adjustment deviation, Fig. 6(b) shows the first In the drawing pattern, the second drawing pattern is deflected to the right in the figure, and FIG. 6(c) shows that the second drawing pattern is deflected to the left side of the figure in the first drawing pattern. 27 326\Patent Specification (Supplement)\94-11\94123355
1291763 例〇 a 如該等之圖所示，在未設有餘裕區域之實例中，由 -準偏差之發生，會造成與通道部對應之圖案精確度之^ 依照此種方式之本實施形態時，因為以高精確度 T F T特性上重要之圖案，所以可以提供高品質之灰階， 另外，在上述實施形態2中，遮光膜1 3之材質和 光膜1 2之材質可以使用與實施形態1同樣者。但是， 上述遮光膜13和半透光膜12之材質之組合，需要膜 刻特性互異，在一方之膜之蝕刻環境，另外一方之膜 而才性。例如，在遮光膜1 3由C r形成，半透光膜1 2由 形成之情況，當使用氯系氣體對C r遮光膜進行乾式爸 或使用混合硝酸鈽銨和過氧化鹽之稀釋之蝕刻液進行 蝕刻時，因為在與底層之Μ 〇 S i半透光膜之間，可以獲 蝕刻選擇比，所以大多不會對MoS i半透光膜造成損1 用蝕刻可以只除去Cr遮光膜。另外，當上述遮光膜 半透光膜12成膜在基板上時，最好具有良好之密著4 另外，遮光膜1 3和半透光膜1 2之材質使用蝕刻特 同或類似者，可以使用在半透光膜12和遮光膜13之 有蝕刻阻擋層之罩幕毛胚。蝕刻阻擋層可以使用例如 或S0G(Spin on Glass)等。該等之材質之透過性良好 使介入有半透光部，亦可以不會損及其透過特性地除 另外，在上述之實施形態中，所說明之實例是只在 部之通道部側設置餘裕區域，但是亦可以如圖7所示 遮光部和透光部之鄰接之其他部份亦設置餘裕區域1 326\專利說明書(補件)\94-11\94123355 28 於對 ;化。 形成 L幕。 半透 對於 之蝕 具有 MoSi 〔刻， 濕式 得高 :，利 1 3和 生。 性相 間設 Si〇2 ，艮p 去。 遮光 ，在 8 〇經 1291763 由設置餘裕區域 1 8，即使在 Y方向產生對準偏差之情況 時，亦可以防止半透光膜從遮光部突出。 另外，在上述之實施形態中，所示之實例是先前技術例 2之TFT基板製造用之灰階罩幕，但是本發明亦可適用在 具有透光部、遮光部和半透光部在一方向依此順序鄰接之 圖案之灰階罩幕。 【圖式簡單說明】 圖1是實施形態1之灰階罩幕之剖面圖。1291763 Example 如 As shown in the figures, in the case where there is no margin area, the occurrence of the -quasi-bias will result in the pattern accuracy corresponding to the channel portion. In the second embodiment, the material of the light-shielding film 13 and the material of the light film 12 can be used in the same manner as in the first embodiment, because of the high-precision pattern of the TFT characteristics. By. However, the combination of the materials of the light-shielding film 13 and the semi-transmissive film 12 requires that the film-forming characteristics are different from each other, and the film is formed in one of the films. For example, in the case where the light-shielding film 13 is formed of C r and the semi-transmissive film 12 is formed, when the C r light-shielding film is dry-type using a chlorine-based gas or etching using a mixed dilution of ammonium cerium nitrate and a peroxy salt When the liquid is etched, since the etching selectivity can be obtained between the semi-transmissive film and the semi-transparent film of the underlayer, most of the MoS i semi-transmissive film is not damaged. Only the Cr light-shielding film can be removed by etching. In addition, when the light-shielding film semi-transmissive film 12 is formed on the substrate, it is preferable to have a good adhesion. Further, the materials of the light-shielding film 13 and the semi-transmissive film 12 are etched or the like, and A mask blank having an etch barrier layer on the semi-transmissive film 12 and the light-shielding film 13 is used. As the etching stopper layer, for example, S0G (Spin on Glass) or the like can be used. The material has good permeability, and the semi-transmissive portion is interposed, and the transmission characteristics can be removed without damaging the transmission characteristics. In the above-described embodiment, the example is that the margin is provided only on the channel portion side of the portion. The area, but it is also possible to set the margin area 1 326\patent specification (supplement)\94-11\94123355 28 as shown in Fig. Form the L curtain. Semi-transparent for the etch has MoSi [engraved, wet type is high:, profit 1 3 and raw. Sex is set between Si〇2 and 艮p. The light-shielding is prevented from protruding from the light-shielding portion even when the alignment deviation occurs in the Y direction at 8 〇 1291763 by setting the margin region 18. Further, in the above-described embodiment, the example shown is a gray scale mask for manufacturing a TFT substrate of the prior art example 2, but the present invention is also applicable to a light transmissive portion, a light shielding portion, and a semi-transmissive portion. A grayscale mask that aligns the pattern in this order. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a gray scale mask of the first embodiment.
圖2 ( a )〜（c )是實施形態1之灰階罩幕之部份擴大圖。 圖3 ( a )〜（h )是實施形態1之灰階罩幕之製造步驟圖。 圖4 ( a )〜（h )是實施形態2之灰階罩幕之製造步驟圖。 圖5 ( a )〜（c )是實施形態2之灰階罩幕之部份擴大圖。 圖6 ( a )〜（c )是比較例之灰階罩幕之部份擴大圖。 圖7是另一實施形態之灰階罩幕之平面圖。 圖8(a)、（b)是先前技術之灰階罩幕之平面圖。 圖9 ( a )〜（e )是先前技術之T F T基板之製造步驟圖。 圖1 0是先前技術之灰階罩幕之平面圖。 圖1 1是先前技術之製造階段之T F T基板之平面圖。 圖1 2 ( A )、（ B )是先前技術之灰階罩幕之剖面圖。 圖1 3 ( a )〜（c )是先前技術之灰階罩幕之部份擴大圖。 圖1 4 ( a )〜（h )是先前技術之灰階罩幕之製造步驟圖。 圖1 5 ( a )〜（h )是先前技術之灰階罩幕之製造步驟圖。 圖1 6 ( a )〜（h )是先前技術之灰階罩幕之製造步驟圖。 【主要元件符號說明】 326\專利說明書(補件)\94-11\94123355 29 12917632(a) to (c) are partial enlarged views of the gray scale mask of the first embodiment. 3(a) to (h) are diagrams showing the manufacturing steps of the gray scale mask of the first embodiment. 4(a) to (h) are diagrams showing the manufacturing steps of the gray scale mask of the second embodiment. Fig. 5 (a) to (c) are partial enlarged views of the gray scale mask of the second embodiment. Fig. 6 (a) to (c) are partial enlarged views of the gray scale mask of the comparative example. Figure 7 is a plan view of a gray scale mask of another embodiment. Figures 8(a) and (b) are plan views of prior art grayscale masks. 9(a) to (e) are diagrams showing the manufacturing steps of the prior art TF T substrate. Figure 10 is a plan view of a prior art grayscale mask. Figure 11 is a plan view of a FT substrate of the prior art fabrication stage. Figure 1 2 (A), (B) is a cross-sectional view of a prior art grayscale mask. Figure 1 3 (a) ~ (c) is a partial enlarged view of the gray scale mask of the prior art. Figure 1 4 (a) ~ (h) is a manufacturing step diagram of the gray scale mask of the prior art. Figure 1 5 (a) ~ (h) is a manufacturing step diagram of the prior art gray scale mask. Figure 1 6 (a) ~ (h) is a manufacturing step diagram of the prior art gray scale mask. [Main component symbol description] 326\Patent specification (supplement)\94-11\94123355 29 1291763
10 灰 階 罩 幕 -11 透 明 基 板 12 半 透 光 膜 12a 半 透 光 膜 圖案 13 遮 光 膜 13a 遮 光 膜 圖 案 14 罩 幕 毛 胚 1 5 > 1 6 抗 劑 膜 15a、 16a 抗 名虫 劑 圖 案 1 7、1 8 餘 裕 區 域 24 罩 幕 毛 胚 3 26\專利說明書(補件)\94_ 11 \94123 3 5 5 3010 Grayscale mask-11 Transparent substrate 12 Semi-transmissive film 12a Semi-transmissive film pattern 13 Light-shielding film 13a Light-shielding film pattern 14 Mask blank 1 5 > 1 6 Anti-drug film 15a, 16a Anti-worm agent pattern 1 7,1 8 Yuyu area 24 mask blank 3 26\patent specification (supplement)\94_ 11 \94123 3 5 5 30
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| JP4816197B2 (en) * | 2006-03-30 | 2011-11-16 | 大日本印刷株式会社 | Gradation mask and manufacturing method thereof |
| JP4934237B2 (en) * | 2007-09-29 | 2012-05-16 | Ｈｏｙａ株式会社 | Gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method |
| JP5089362B2 (en) * | 2007-12-13 | 2012-12-05 | 信越化学工業株式会社 | Photomask and exposure method |
| WO2009130746A1 (en) * | 2008-04-22 | 2009-10-29 | シャープ株式会社 | Method for manufacturing thin film transistor substrate |
| JP5182029B2 (en) * | 2008-11-18 | 2013-04-10 | 大日本印刷株式会社 | Gradation mask |
| JP2011210889A (en) * | 2010-03-29 | 2011-10-20 | Hoya Corp | Resist coating method and resist coating device, and photomask blank and method of manufacturing photomask using the resist coating method |
| JP5635577B2 (en) * | 2012-09-26 | 2014-12-03 | Hoya株式会社 | Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method |
| TWI682190B (en) * | 2014-03-19 | 2020-01-11 | 日商豪雅冠得光電股份有限公司 | Optical element |
| JP2015212720A (en) * | 2014-05-01 | 2015-11-26 | Hoya株式会社 | Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device |
| CN104122700A (en) * | 2014-05-29 | 2014-10-29 | 京东方科技集团股份有限公司 | Substrate for 3D display, manufacturing method thereof and mask plate |
| JP2016224289A (en) * | 2015-06-01 | 2016-12-28 | Hoya株式会社 | Method for manufacturing photomask, photomask and method for manufacturing display device |
| JP6726553B2 (en) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | Photomask manufacturing method and display device manufacturing method |
| JP6573591B2 (en) * | 2016-09-13 | 2019-09-11 | Hoya株式会社 | Photomask manufacturing method, photomask, and display device manufacturing method |
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|---|---|---|---|---|
| JP3429125B2 (en) * | 1995-12-21 | 2003-07-22 | 沖電気工業株式会社 | Phase shift mask and method of forming resist pattern using the mask |
| JPH11289010A (en) * | 1998-04-01 | 1999-10-19 | Sony Corp | Formation method for multilayer interconnection |
| JP2002131885A (en) * | 2000-10-23 | 2002-05-09 | Hoya Corp | Drawing method of gray tone mask and manufacturing method |
| JP2002189281A (en) * | 2000-12-19 | 2002-07-05 | Hoya Corp | Gray tone mask and method for producing the same |
| JP4410951B2 (en) | 2001-02-27 | 2010-02-10 | Ｎｅｃ液晶テクノロジー株式会社 | Pattern forming method and manufacturing method of liquid crystal display device |
| KR100464204B1 (en) * | 2001-06-08 | 2005-01-03 | 엘지.필립스 엘시디 주식회사 | Gray tone mask and manufacturing method for liquid crystal display using it |
| CN1218171C (en) * | 2001-08-20 | 2005-09-07 | Hoya株式会社 | Gray tone mask defect detecting method and defect detecting device |
| JP2006030319A (en) | 2004-07-12 | 2006-02-02 | Hoya Corp | Gray tone mask and method for manufacturing gray tone mask |
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2004
- 2004-07-12 JP JP2004205309A patent/JP2006030320A/en active Pending
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2005
- 2005-07-08 KR KR1020050061760A patent/KR100663115B1/en not_active IP Right Cessation
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| JP2006030320A (en) | 2006-02-02 |
| KR20060049995A (en) | 2006-05-19 |
| KR100663115B1 (en) | 2007-01-02 |
| CN1721960A (en) | 2006-01-18 |
| CN100432809C (en) | 2008-11-12 |
| TW200608581A (en) | 2006-03-01 |
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