1291452 九、發明說明： 【發明所屬之技術領域】 本發明與在基板上形成微結構的方法相關。 【先前技術】 使用微影術以及饍扯屏以泌/ 知的； 及犧牲層以形成微機械結構的技術是習 勺。本發明是授與Gluckel的美阈奎心r 露才扪果國專利5，190,637號所揭 之技術的改進，其標題為，，以1291452 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of forming a microstructure on a substrate. [Prior Art] It is a technique to use lithography and a pad to discriminate; and a sacrificial layer to form a micromechanical structure. The present invention is an improvement of the technique disclosed in U.S. Patent No. 5,190,637 to Gluckel, which is entitled to
射綠料⑨+ ， 犧牲金屬層之多位階深X "u衫術形成微結構”（，637專 ^ 考。 寻利），其在此整合作為參 在637專利中，微結構在幾個步驟内建構。首先，將 从由輪射線暴露的光阻声& 、 罩將央阳〇 )先阻層知加於電鍍基材。然後使用光 一個# h M 兄。午輻射線只，，暴露”光阻的 產生 貝〜將遙擇暴露的光阻除去， 生设I曝光光罩所計書複萝 ^ ^ 的空H T — M的一個空穴。在光阻裡形成 的電轳I # U 主要金屬電鍍到已暴露 金屬埝鐘在整個主要金屬以/广並且次要金屬(犧牲 及:欠要八… 電鑛基材上方。主要金屬以 孟屬Λ、、、後以機械方法向 屬暴命&一# 下械械加工到一個將主要金 冰路的尚度，且將表面平扭 蜮如工2 ^ ★ —化以進後的處理。在機 工之後’可以跨過主 要以及次要金屬施加另一弁阻 曰’然後使用如上的相同虚m υ 光阻 ρ , 的相Π處理將光阻圖案化。在主|八屬 已羥電鍍在光阻中產生的空穴 要至屬 後電龢a |八e ^ 之伋除去其餘的光阻，然 讀:人要金屬在整個第—次 主要今屬l· 爲此、… 丨J恭路的第一 盂屬上以及新近加入的第- 主要金屬上。同時向下機 7 1291452 械力口工裳-+ ^ _ 個I击—要 笫三次要金屬到主要金屬第二層的_ 求的厚度，並重複這個處理直到、 數，而產座* + , 匕、、工形成所要求的層 生在主要金屬内所要求的微結構。一旦形 冓，整體電鍍表面以及主^镟結 蝕刻劑潠摆責玉屬暴路於蝕刻劑中， 擇性蝕刻掉次要金屬而不蝕刻主要金 留下主要金屬以及電鍍表面。 |金屬’因此只 間次==要金屬而不是只使用光阻’因為在機械加工期 里屬足夠提供主要金屬的結構穩’ 對弱的，而在機械加工處理(其可以包括車為：阻，^ 拋光、化學機⑽丄（八了以匕括車削、研磨、擦磨、 撐主要金屬以、辛又ί大里的側向力量’因此無法適當地支 屬的機械加工之‘I^ 此不且在主要金 生嚴重的損Λ 因為對主要金屬結構报可能產Shooting green material 9+, the sacrificial metal layer has a multi-step depth X "u shirt formation micro-structure" (, 637 special test. Seeking profit), which is integrated here as a reference in the 637 patent, the microstructure is in several In the first step, the photoresist layer exposed from the wheel ray and the mask will be added to the plating substrate. Then use a # h M brother. The noon radiation only, Exposed "resistance of the photoresist" to remove the photoresist from the remote selection, and create a cavity of the empty HT-M of the I exposure mask. The electric 轳I # U formed in the photoresist is mainly metal plated to the exposed metal 埝 clock throughout the main metal / wide and secondary metal (sacrifice and: owe eight... above the electric ore substrate. The main metal is Meng Λ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, After the mechanics, 'the other can be applied across the primary and secondary metals' and then the photoresist is patterned using the same imaginary m υ photoresist ρ as above. In the main | eight genus has been hydroxy plated in The holes generated in the photoresist should be after the genus and a | eight e ^ 汲 remove the rest of the photoresist, then read: people want the metal in the entire first - time main genus l · for this, ... 丨 J Gong Lu The first genus and the newly added primordial metal. At the same time, the lower machine 7 1291452 fascinating sputum - + ^ _ I strike - to lick three times the metal to the second layer of the main metal Thickness, and repeat this process until the number, while the seat * *, 匕,, work formation required layer is born in the main The microstructure required in the metal. Once the shape is formed, the overall plating surface and the main etchant 潠 潠 玉 玉 暴 暴 于 in the etchant, selectively etch the secondary metal without etching the main gold leaving the main metal And the plating surface. |Metal 'so only times == want metal instead of just using photoresist 'because it is sufficient to provide a stable structure of the main metal during the machining period. It is weak, but in machining processing (which can include The car is: resistance, ^ polishing, chemical machine (10) 丄 (eight to include turning, grinding, grinding, supporting the main metal, the lateral strength of Xin and ί大', so can not properly support the machining of 'I ^ This is not a serious loss in the main gold, because it is possible to produce a major metal structure.
裂。最後，、：要=無側向支撐的結構部分會撕裂或是破 地提供-個導〜2提供的一個額外的優點是，它方便 要金屬層二：二 隨後的主要金屬層，隨後的主 電鑛將要=:::方的主要金屬結構上。否則，懸突之 欠頜外的潯膜種子層沉積步驟。 建二如==向地很大的微結構在單-基板上 顯著的_ 频探㈣時，制這方法出現 電鑛次要全屬^ 表面（例如在探針頭情況的陶幻 曲及起曲。之引/員外犧牲金屬的應力下造成電鍍基材彎 起兩個相關的問題：υ冑械加工不同的層 8 1291452 到一個均r~ 、旱度變得很難或是不可能，以及2)因為微影 件丁而要一個半+ 支 月b 。 一表面，微影術的進行變得很難或是不可 、不同的技術已經使用或是建議以解決這個問題， :過每-：都有它的缺陷。首先，已經嘗試過次要(犧牲) 又拴制的低應力。透過添加物的使用或是透過脈crack. Finally, : = = the part of the structure without the lateral support will be torn or broken - an additional advantage provided by the guide ~ 2 is that it is convenient to the metal layer two: two subsequent major metal layers, followed by The main electricity mine will be on the main metal structure of the =::: square. Otherwise, the overhanging decidual seed layer deposition step outside the jaw. When the second structure of the ================================================================================================== The problem of bending the plated substrate under the stress of the external metal of the lead/arm is two related problems: the different layers 8 1291452 of the machine are processed, and the dryness becomes difficult or impossible, and 2) Because of the lithography, one and a half + moon b. On a surface, the progress of lithography becomes difficult or impossible, different techniques have been used or suggested to solve this problem: Everything has a flaw. First, low stresses that have been tried (sacrificial) and clamped have been tried. Through the use of additives or through the veins
T包錄技術可以控制電鍍沉積應力。不過，在隨後的處理 期間’合1丨士口 j t 九阻的固化，施加熱可能引起次要金屬變 應力”（立田 θ 、另 .(:心疋相對於基板而施加薄膜應力）而無法防止翹 曲：知道了增加基板厚度能夠增加其忍受的應力，也嘗試 過：加基板的厚度。不㉟，忍受次要金屬應力所需要的基 板厚度可能是不實用的。另外，薄膜應力（雖然不_定是， 但本質上最常是拉伸力）引起在基板/金屬介面或附近的機 械失效’包括陶瓷的層裂以及整塊裂開。 因此，需要一個處理以產生微機械以及微機電系統結 構，使得多個或是大型結構可以在相同基板上產生而沒有 基板龜曲。 【發明内容】 本發明透過次要金屬的提供解決上面描述的缺陷，次 要金屬不電鍍在整個基板結構區域的上方。次要金屬改為 只電鍍在圍繞主要金屬結構的緊鄰區域，因此它把它的結 構穩定度轉借給主要金屬結構，但是不在基板上引起不= 當的應力。本發明產生次要（犧牲）金屬”島”，其為機械穩 9 1291452 疋度以及產生結構性懸突 人尸；T而要的地方，而不要求次 屬在整個區域上形成以白 ” 圍基板上的所有結構性金屬區 域。 在本發明中，光阻施加於 必刀瓦包鍍表面。然後使用光罩移 除一部分光阻以形成一個★ ^ ^ 二八。光阻内形成的空穴然後以 主要金屬填滿，其係雷參ξ Φ 你逼鍍至，J電鑛表面i。然錢去剩餘的 光阻部分，並施加另一光阻jS ^ β |層到基板及主要金屬結構上。 然後光阻的一部分只；ή：白# _ ^ 在括一二主要金屬結構的區域以及 要形成次要金屬島的區域内、、交銥 # ^ 7匕焯内/合解。島可以只包含緊鄰圍繞 主要金屬結構的區域，例如在隨後的機械加工中適於提供 機械穩定度的區域’或是可以圍繞更大的區域但是在程度 上比整個基板區域小的區域1後電鑛次要、高應力（犧牲） 金屬到-些在主要金屬結構周圍產生的空穴裡以及在主要 金屬結構本身上。這避免跨過整個基板電鑛次要金屬，其 係引起基板翹曲之不適當應力來源。現在可以電鍍低應力 填充材料層在實質整個基板的上方。這種填充材料可以是 ^合物或是第三（犧牲）金屬。如果使用第三金屬，該金屬 是-種低應力金屬❿不是如同次要（犧牲）金屬的高應力金 屬。填充材料、次要金屬以及主要金屬的整體然後可以機 械加工到主要金屬所要求的高度，平坦化以及暴露主要金 屬，然後可以使用相同的方法在第一層上面建構一個隨後 的層。 一旦主要金屬結構的整體已經產生，可以除去剩餘的 光阻部分，並且次要金屬（以及任何第三犧牲金屬）可以使 1291452 用蝕刻劑選擇性地蝕刻掉 ” •二/卜疋王要A屦 應該理解無論何時使用"主 至屬 14. 一 詞睹，3 ^ 可以整合任何數量的結構材料，以選擇性供^丁具 能到給定的主要金屬層，該性能如強声、硬广要的姓 展性、電接觸特性、電或是介電：;等硬度…… 基本標準為，它為可電塑、適 要金屬，，的 如u ^ k、併入取終微結構，並且它 在次要金屬的隨後移除期間不被攻擊或是實質。匕 就是說，"主要金屬，，可能在第一 鍤j 貝 而在第二層裡是第二種型態的金屬。給定層的"主要全屬屬 可以從下列中選出：包括金屬、金屬合金、鍍金屬複合物(例 如那些結合電鍍金屬以及例如鑽石的細介電粒子）、微層金 屬共同沈積物、電泳聚合物、導電聚合物、電泳或是；電 塑陶瓷及玻璃。T-recording technology can control plating deposition stress. However, during the subsequent processing period, 'curing of a gentleman's mouth jt nine resistance, application of heat may cause secondary metal deformation stress" (Tita θ, another (: 疋 施加 applied film stress with respect to the substrate) can not be prevented Warpage: It is known that increasing the thickness of the substrate can increase the stress it endures. It has also been tried: adding the thickness of the substrate. Not 35, the thickness of the substrate required to endure the secondary metal stress may be impractical. In addition, the film stress (although not _ Yes, but in essence the most often tensile force) causes mechanical failure at or near the substrate/metal interface 'including ceramic spallation and monolithic cracking. Therefore, a process is required to produce micromechanical and microelectromechanical systems The structure is such that a plurality of or large structures can be produced on the same substrate without the substrate tortuous. SUMMARY OF THE INVENTION The present invention solves the above-described drawbacks by providing a secondary metal that is not plated throughout the substrate structure region. Above. The secondary metal is instead electroplated only in the immediate vicinity of the main metal structure, so it lends its structural stability to the main gold. Is a structure, but does not cause stress on the substrate. The present invention produces a secondary (sacrificial) metal "island" which is mechanically stable 9 1291452 and produces a structural overhanging body; where T is required, Rather than requiring the subordinate to form all structural metal regions on the substrate in a white area over the entire area. In the present invention, the photoresist is applied to the surface of the tile coating. Then a portion of the photoresist is removed using the mask to form A ^ ^ ^ 28. The cavity formed in the photoresist is then filled with the main metal, which is the Thunder ξ Φ you push it to the surface of the J. I will go to the remaining photoresist part and apply another a photoresist jS ^ β | layer to the substrate and the main metal structure. Then part of the photoresist only; ή: white # _ ^ in the area of the main metal structure and the area where the secondary metal island is to be formed,铱 ^ ^ ^ ^ ^ ^ ^ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 岛 岛 岛 岛 岛 岛 岛 岛 岛 岛 岛 岛 岛 岛 岛 岛. To a greater extent than the entire base After a small area, the area 1 has a secondary, high-stress (sacrificial) metal to some of the holes generated around the main metal structure and on the main metal structure itself. This avoids crossing the entire substrate of the secondary metal. It is a source of undue stress that causes warpage of the substrate. It is now possible to plate a layer of low stress filler material over substantially the entire substrate. This filler material can be a compound or a third (sacrificial) metal. If a third metal is used. The metal is a low-stress metal that is not a high-stress metal like a secondary (sacrificial) metal. The bulk, secondary metal, and bulk metal can then be machined to the height required for the primary metal, planarized, and exposed. The primary metal can then be used to construct a subsequent layer on the first layer using the same method. Once the bulk of the primary metal structure has been produced, the remaining photoresist portion can be removed and the secondary metal (and any third sacrificial metal) can Make 1291452 etched selectively with an etchant" • Two / 疋 要 王 A A 屦 A should understand when With the word "main to the genus 14.", 3 ^ can be integrated with any number of structural materials to selectively provide a given primary metal layer, such as strong, hard and broad Sex, electrical contact characteristics, electricity or dielectric:; hardness; the basic standard is that it is electroformable, suitable for metals, such as u ^ k, incorporated into the final microstructure, and it is secondary The subsequent removal of the metal is not attacked or substantial. That is to say, the "main metal" may be the first type of metal and the second type of metal in the second layer. The main genus of a given layer can be selected from the group consisting of metals, metal alloys, metal-plated composites (such as those combined with electroplated metals and fine dielectric particles such as diamonds), microlayer metal co-deposits, electrophoresis. Polymer, conductive polymer, electrophoresis or; electro-ceramic and glass.
式 方 施 實 rL 圖1顯示在其上面要建構微結構的一種起始材料。基 板100可以是任何類型的基板，包括半導體(例如矽、鍺以 及申化蘇）陶究（如氧化铭、氮化銘、低溫共燒陶瓷（ltcc) 以及高溫共燒陶瓷（HTCC))、金屬或是玻璃。在本發明的 個貫施例内’微結構如用在半導體元件測試的彈簧可以 在基板100上產生。在這情況下，基板i 00可以是具有内 建通孔110的低溫共燒陶瓷（LTCC)基板，使得電可以透過 通孔110的方式從基板100的一面l〇〇a傳導到基板1〇〇的 另一面1 00b。在本發明的一個實施例中，通孔丨丨〇由金製 1291452 成’但是可以使用任何其他導體如銅或是鉑。陶究也可以 包含電再分配導體，使它成為在習知技術内普遍知道的電,， • 空間轉換器”。 ‘· 在本發明的一個實施例中，電鍍表面200可以施加於 如圖2A中所示基板1〇〇的一個表面n〇a上。電鍍表面的 一個範例是鉻/金種子層2〇〇。鉻/金種子層2〇〇為主要金屬 700(在圖7B顯示）的導電黏著層以及電鍍種子，主要金屬 _ 700稍後將形成要電鍍的微結構。鉻/金種子層2〇〇可以使 用濺鍍機沈積在基板1〇〇上，或是種子層2〇〇可以使用電 子束蒸發、導電聚合物旋塗、或是無電鍍而成。種子層可 以是任何普遍知道的材料以及材料組合，例如鉻在金下、 • 鈦在銅下、鈦鎢在金下等等。而在一些實施例中，基板1〇〇 • 可以不具有通孔1 1〇(例如用來建構不需要電性連接或是穿 透基板的微結構），如果通孔丨10在基板1〇〇中，種子層2〇〇 最好是電性連接到通孔110 ,使得建構在種子層2〇〇之上 φ 的結構可以導引電信號穿過基板100。種子層200通常相 當薄並且可以使用300Λ的鉻以及2000A的金組成，雖然 其他組成以及厚度可以在不同的量使用而沒有背離本發明 的精神。如果基板由金屬做成，可以不需要電鍍基材，因 為金屬可以組成電鍍基材。另外，其他結構（如介電薄膜以 及導線堆疊，包括導體及介電薄膜）可以鋪放在基板以及電 鍍種子之間而沒有背離本發明的精神。 在圖2B裡，第一光阻層210施加在種子層2〇〇之上， 光阻210是光可圖案化聚合物。光阻21〇可以是正或是負 12 1291452 光阻。對正光阻來說，光 冷…“要除去的地方則將光阻暴露於 寸疋颂i的輪射線中。在這類 ^ 化學結構，它變得更可、、容 -、秦改變光阻的 物、更了成顯影劑。暴露光阻然後由顯影 夜沖掉，尸、留下不被幸畐射線暴露的光阻。負光阻有一 ::相反的模式。暴露於輻射線改變光阻的化學結構使它變 得更難溶解。可以利用不Formula R r Figure 1 shows a starting material on which the microstructure is to be constructed. The substrate 100 can be any type of substrate, including semiconductors (such as yttrium, yttrium, and sin sui) ceramics (such as oxidized melody, nitrite, low temperature co-fired ceramic (ltcc), and high temperature co-fired ceramic (HTCC)), metal Or glass. In the embodiment of the present invention, a microstructure such as a spring used for testing of a semiconductor element can be produced on the substrate 100. In this case, the substrate i 00 may be a low temperature co-fired ceramic (LTCC) substrate having a built-in via 110 so that electricity can be conducted from one side of the substrate 100 to the substrate 1 through the via 110. The other side of the 100b. In one embodiment of the invention, the vias are made of gold 1291452' but any other conductor such as copper or platinum may be used. Ceramics may also contain electrical redistribution conductors, making it a commonly known electrical source in the art, • Space Converters. 'In one embodiment of the invention, the plating surface 200 may be applied as shown in Figure 2A. One surface of the substrate 1〇〇 is shown on the surface n〇a. One example of the plated surface is a chromium/gold seed layer 2〇〇. The chromium/gold seed layer 2〇〇 is the conductive of the main metal 700 (shown in Figure 7B). Adhesive layer and electroplated seed, the main metal _ 700 will later form the microstructure to be electroplated. The chrome/gold seed layer 2〇〇 can be deposited on the substrate 1 using a sputtering machine, or the seed layer can be used. Electron beam evaporation, conductive polymer spin coating, or electroless plating. The seed layer can be any commonly known material and material combination, such as chromium under gold, titanium under copper, titanium tungsten under gold, and the like. In some embodiments, the substrate 1〇〇 may not have a through hole 1 1〇 (for example, to construct a microstructure that does not require electrical connection or penetrate the substrate), if the via hole 10 is on the substrate 1〇〇 In the middle, the seed layer 2 is preferably electrically connected to The hole 110 is such that a structure constructed φ above the seed layer 2〇〇 can direct electrical signals through the substrate 100. The seed layer 200 is typically quite thin and can be composed of 300 Å of chromium and 2000 A of gold, although other compositions and thicknesses can It is used in different amounts without departing from the spirit of the invention. If the substrate is made of metal, it is not necessary to plate the substrate because the metal can constitute a plated substrate. In addition, other structures (such as dielectric films and wire stacks, including conductors) And the dielectric film) can be placed between the substrate and the electroplated seed without departing from the spirit of the invention. In FIG. 2B, the first photoresist layer 210 is applied over the seed layer 2, and the photoresist 210 is light. Patterned polymer. Photoresist 21〇 can be positive or negative 12 1291452. For positive photoresist, light is cold... “Where to remove, the photoresist is exposed to the ray of inch 疋颂i. In this type of chemical structure, it becomes more versatile, and it can change the photoresist and become a developer. The exposed photoresist is then washed away by the development night, leaving the photoresist untouched by the fortunate rays. Negative photoresist has a :: opposite mode. Exposure to radiation changes the chemical structure of the photoresist making it more difficult to dissolve. Can use
j頰型的先阻，包括能在可見光、 =光、紫外線、直寫電子束或是其他形式輻射線暴露時改 =阻的化學結構。在本發明的一個實施例中，例如希普 利电子材料公司生產的光阻，如型號1518或是4㈣旋塗 於種子層上。其他類型的光阻21〇，例如聚甲基丙稀 酸甲酉旨⑽MA)、聚亞醯胺、SU8或是希普矛4㈣1〇〇也 可以使用。光阻210可以以很“同的方式施加於種子層， 包括旋塗、電鍍、噴塗、分層乾膜方法或是圖案化鍍覆。 在旋塗…1〇之後，經常以烤爐或是加熱板供烤，以驅 除溶劑以及/或是使光阻21〇變硬。 圖3A說明使用光罩3〇〇以形成在正光阻21〇中的空 穴（雖然如果光罩圖案反置也可以使用負光阻）。輕射線光 束的形式以箭頭標明uv方向照到光罩3〇〇上，並且uv 在光罩300已經修改允許輻射線通過光罩3〇〇的任何地方 通過。光阻210在已經修改光罩3〇〇之區域的直接下面位 置洛解，產生如圖3B中所示的空穴31〇。光罩3〇〇可以由 任何可以阻擋輻射線的形式製作，其它部分將光阻2丨〇暴 路。例如，如果用紫外光暴露光阻21〇，那麼光罩3〇〇必 須能阻擋紫外線，除了在已經修改以允許紫外線透過的位 13 1291452 置。光罩300可以以各種不同 方式修改以允許砉5 細上 ^擇的位置通過。例如，如果 ^射線在 ^ ^ 果先罩300意圖阻擋紫外錄 那麼光罩300可以由且右浐★ 7此 田系外線， 由八有施加了紫外線阻擋 破璃平板組成。染色者可以在 之潯Μ的 方丨4占 在要暴路光阻210的位置被鈕 刻掉。可以利用其他許多方法產生相㈣效應。 果方法是用來產生彼此電隔離的微結構，但 相同基板1 〇〇上，那麼播+爲The pre-resistance of the cheek type, including the chemical structure that can change when the visible light, = light, ultraviolet light, direct-write electron beam or other forms of radiation are exposed. In one embodiment of the invention, a photoresist such as Shipley Electronic Materials, such as Model No. 1518 or 4 (4), is spin coated onto the seed layer. Other types of photoresist 21, such as polymethylmethacrylate formazan (10) MA), polyamidoamine, SU8 or Hippur spear 4 (four) 1 〇〇 can also be used. The photoresist 210 can be applied to the seed layer in a very similar manner, including spin coating, electroplating, spray coating, layered dry film method or patterned plating. After spin coating... 1 〇, often in an oven or heating The plate is baked to remove the solvent and/or to harden the photoresist 21〇. Figure 3A illustrates the use of a mask 3〇〇 to form holes in the positive photoresist 21〇 (although the mask pattern can be used if it is reversed) Negative light resistance. The form of the light ray beam is illuminated by the arrow to the reticle 3 ,, and uv is passed anywhere the reticle 300 has been modified to allow the radiation to pass through the reticle 3. The photoresist 210 is The direct underlying position of the region of the reticle 3 has been modified to produce a cavity 31 如图 as shown in Figure 3B. The reticle 3 can be made of any form that blocks radiation, and the other portions are photoresist 2. For example, if the photoresist is exposed by ultraviolet light, the mask 3 must be able to block the ultraviolet rays, except at the position 13 1291452 which has been modified to allow the ultraviolet light to pass through. The mask 300 can be varied in various ways. Modification to allow 砉5 to be fine ^ The position is passed. For example, if the ^ ray is in the ^ ^ first cover 300 is intended to block the UV recording then the reticle 300 can be composed of and the right 浐 ★ 7 this field outside line, composed of eight have applied UV blocking glass plate. The square 丨4 can be engraved by the button at the position where the typhoon photoresist 210 is to be used. The phase (four) effect can be generated by many other methods. The method is to generate micro-structures that are electrically isolated from each other, but the same substrate 1 〇〇上, then broadcast +
…士心’真 子層200可以在用圖3C顯示的...the heart of the true sub-layer 200 can be shown in Figure 3C
成4人多接觸點以接觸半導體的情況。可以使用乾餘刻（g 離子研磨或是濺射蝕刻)或是濕式蝕刻技術來完成蝕刻。例 如在使用鉻/金種子層的情況下，由金餘刻劑組成的渴式餘 d 士石八皿基姓刻液，接著以商業化的鉻餘刻液餘刻。種 子層也可以以蔭罩或是掀起技術加以圖案化。一旦已經蝕 刻種子層200,光阻21〇的剩餘部分可以如圖4A以任=習 :技術内已知的方法除去(包括但不限於乾蝕刻技術，“ 電漿或是反應性離子蝕刻、雷射輔助蝕刻、切除，或是以 例如使用丙酮、甲醇、IPA、酸剝離液（像piranh勾或是其 他溶劑以及習知技術中已知的濕蝕刻技術。圖4B是圖4A 從上向下的視圖。在圖4A以及4B的結構為彼此電性隔離 之結構的起始結構，但是能透過通孔丨1〇的使用而從基板 100的一面傳送電信號到另一面。 在本發明的實施例中，若微結構必須可以電性傳導信 號到通孔1 10 ’然而必須與其他結構電性隔離，則第二種 子層500可以施加於基板1〇〇(在第一種子層2〇〇已經蝕刻 14 1291452 掉的位置内）以及第-種子層200上，使得如圖5a中所示， 鄉牲)金屬_可以在要電鑛的位置上具有電連線。 最好是，第二種子層5〇〇與第一種子層2〇〇相比較是且有 不同的組成’因此可以把它蝕刻掉而不蝕刻掉第一種子層 2〇〇。在-個實施例中，300入鈦以及2〇〇〇A銅的第二種； 層500可以滅鍵跨過基板100以及第一種子層細。第二 種子層500彳以以很多其他組成製作而維持本發明的精 神。如果使用第二種子層·，那麼將除去部分的第二種 子層別，使得形成微結構的主要金屬可以與第_種 子層200直接接觸。這可以如圖2B_4Am示的模式完心 應，理解在主要㈣結構不需要電性連接到基板⑽ 的f施例中，例如在最後形式之微結構不與基才反⑽連接， 或是主要金屬結構不需要彼此電性絕緣的情況下，第 二種子層500可能不是必需的並且第一種子層可以 案化。 -旦電鍍基材已經形成，主要金屬7〇〇的結構 備製作。在圖6A中，施加光阻21〇在第一 2〇〇以及第二 種子層之上（如果第二種子層5〇〇的確存 ^ ; 1^光阻 2 1 〇 可以是施加在圖2B上的相同光阻或可以是不同的光阻 取：於該層所要求的厚度、圖案的極性(負或是正)或是任 何，、他物錢光阻21G使用光罩㈣暴露，使得 在光阻2H)裡形成空穴31〇，使第一層微結構形狀 6B以及7A中顯示的。雖然不同的參考數字指出整個: 期間使用的光罩可能具有不同圖案，應該理解， 丨口取夕個 15 1291452 光罩300、3 30、340、3 50可能具有與另一個光罩相同 圖案。 一旦暴露在光阻210裡的空穴31〇，將用來形成微結 構的主要金屬700可以電鑛到空穴3丨〇，如圖7B所示。主 要金屬700可以是任何金屬類型，例如以2〇_25微米量電 鍍進入空穴310的鎳錳合金。因為主要金屬7〇〇必需擦磨 以及拋光以將該層平坦化並且得到一個均勻的控制厚度， 主要金屬700通常電鍍得稍微比期望的最後層厚度要厚。 如圖7C巾所，然後以上述方式移除光阻21〇的剩餘部份。 現在如圖8A中所示，電鍍次要（犧牲）金屬8〇〇到第二 種子層500上（如果它不同於主要種子層）以及主要金屬7⑽ 上。次要金屬800可以是任何可電沉積的金屬，其可以選 擇性地蝕刻或是除去而沒有實質影響主要金屬7〇〇。次要 金屬800也應該是一種高應力金屬，其中在丨導體工業裡， =應力意指2〇OGPa以及以上。以次要金屬8〇〇完全覆蓋 第層主要金屬700，因為次要金屬8⑼提供機械穩定产 到主要金屬700，主要以及次要8Q()金屬表面的㈣ 力二工變得容易。光B 210是機械上相對弱的，因此如果它 疋在主要金屬700周圍剩餘的唯一物質，光阻21〇可#在 它被機械力…寺剝開及撕開(因此不能提供一個平' 的平面結構），光阻210也不能提供主要金屬在機械加 的水平支撐。而且，如果-個人試圖機械Γ: 常"的=70°結構而沒有任何東西圍繞它，將使通 吊脆弱的主要金屬700結構受到重大損傷的危險，例如撕 16 1291452 開部分的主要金屬700結構。最後，次要金屬可提供 個額外優點是它方便地提供一個導電電鍍基材，、' 突於主要金屬結構之上的隨後主要金屬層。、為心 只，懸突0^] 電鍍將要求額外的薄膜種子層沉積步驟。在一 . ,^ 1口灵施例 内，。人要至屬700可以是銅並且可以電鍍到厚度等於或是 稍微大於主要金屬7〇〇(大幾微米到數十微来）。圖顯= 圖8A在單元已經擦磨及拋光之後的結構，使得主全I 7〇〇為想要的厚度。 m 一如圖8A以及8B中所示，次要金屬8〇〇的第—層（或 是财面幾層）可以電鍍跨過整個基板。但是，跨過整個S 電鍍的次要金屬800層必須不那麼厚或是那麼多，以免造 成任何基板-個不可忽視的龜曲量。注意大部分的次要: 屬8〇0層沒有電鑛跨過整個基板，而是只圍繞主要金屬7〇〇 結構周圍以及任何隨德,舌 汉仕Π丨逍後（更尚層）的主要金屬結構，以使 它們在擦磨以及拋光(機械加工)期間添加需要的機械穩定 度到主要金屬700結構，並且提供電鍍基材給隨後的懸突 層。 ^ 這可以在圖12B-14 Α φ、主& β Q B 更清楚顯示。當次要金屬8〇〇跨 過基板1 00整個長度電鲈眭 兒鈹蚪（不像在上面指出的），增加到 基板1 0 0的額外声力+ “力顯不已經彎曲基板100。基板100的 翹曲使它很難或是不可銥脸A 丁 月匕將匕平坦化到均勻的高度。然 而，微影術以及隨後機赫4 铖械加工需要平坦化，因此當在相同 基板1 00建構幾個e j i -疋大的）微結構時是不可接受的。因 此，多數的次要金屬8〇〇 層應该只電鍍到一個長度以及厚 17 1291452 度，使得它添加主要金屬700、结構的結構穩定度，但就只 如此。在本發明的一個實施例中’次要金屬800在-個區 域電鑛，該區域覆蓋基板1〇〇的8〇%(次要金屬嶋技術上 不接觸基板目為基板技術上已經由電鑛基材覆蓋）。在本 發明的。-個實施例中’次要金屬8〇〇在一個覆蓋基板⑽ 纟區域内電鍍。在本發明的一個實施例中，次要 ::_在—個覆蓋基板1〇〇之3〇%的一區域内電鍍。在 發明。的-個實施例中，次要金屬8〇〇在一個覆蓋基板⑽ T 10%的-區域内電鑛。在本發明的—個實施例中，電鑛 ••人要金屬_之區域的面積是六倍於主要金屬700層的面 積。在本發明的一個實施例中，電鍍次要金屬_之區域 2面積是四倍於主要金屬谓層的面積。在本發明的一個 二：例中’電鍍次要金屬800之區域的面積是十倍於主要 孟屬700層的面積。在本發明的一個實施例中，電鑛次要 :屬_的區域圍繞主要金屬，並且其厚度比主要金：7。。 b的厚度的1倍還大，但是少於2倍。 在圖从，更多光阻210旋塗在單元之平坦化的主要· :及次要_金屬之上。光罩34〇再次用來將光阻㈣圖 ，化為想要的圖案’以產生空穴31〇給如圖犯及i〇A顯 不的主要金屬7GG的次—層。然後主要金屬電鐘到如 圖_中所示的空穴31〇。在圖"A，除去光阻㈣兑餘 部份，並且在圖11B沉積光阻21〇的整個新的一層。 再次使用光罩350來圖案化一個緊鄰包圍主：金屬7〇〇 結構的區域’使得次要金屬_可以根據上述的原理被電 18 1291452 鍍到空穴310内，也就是不跨過整個基板1〇〇，如圖i2A_ 13A中所不。取決於在基板1〇〇上要形成之主要金屬7㈧ 紇構的數ϊ，可以有报多這種次要金屬8〇〇"島I,。然後除 去光阻210的其餘部份。在圖13Β·14Α，施加一層低應力 填充材料Β00在次要金屬8〇〇之上，將之硬化，然後將 單元機械加工到第二層主要金屬·結構的所要求厚度。 可以使用光罩施加低應力填充材料1300,或是它可以簡單 地施加跨過實質整體基板。低應力填充材料·可以是 聚合物（光阻、環氧樹脂、PMMA、酚樹脂、聚氨基甲酸酉旨 或是其他合適的低應力填充材料)或是.一種低應力的第三 (犧牲）金屬。聚合物可以在機械加工方法期間用於次要金 j _周圍（但不是在主要金屬周圍），因為在次要金 屬800周圍的平坦度容許公差是增加的。 +有4 ’使用聚合物作為低應力填充材料13GG是不合乎 需要的，ϋ為聚合物可能不與隨後的處理相容，例如平挺 =或是高溫處理。在這時候，低應力填充材料- =弟三金屬。低應力這個術語用來表示腑a或更少。 化樣弟二金屬應該優化為 第二犧牲金屬形成對比Π:及八，^ 並且優化；^ U牲金屬圍繞主要結構金屬 比的區鑛進入在主要金屬結構之間高深寬 "冓的二以及在機械加工平坦化處理期間支撐主要金屬 釔構的結構穩定度）。最 贵玉屬 基板及主要全屬a乍〜 弟二（犧牲）金屬應該相較於 -般機械加’姑：::谷易以及選擇性地可溶解，报容易以 * 口工*平垣化（包括研磨以及擦磨），在沉積（電 19 1291452 鐘）時具有低應力，以及即使在熱處理之後具有穩定應力（如 在隨後處理步驟包括微影術以及電漿處理中將遇到的）。候 選的第三金屬包括多孔的、顆粒穩定化以及複合的金屬 . (銅、雜、銀、金、錫、銦、船_錫等等）。例如，可以使用 具有懸浮陶瓷粉的銅複合物。由於如此描述之低應力金屬 的密度將是較少於次要（犧牲）金屬的密度，不會受到次要 金屬實質上跨過基板之電鍍的相關問題（也就是翹曲等 _ 專）這種低應力填充材料1 3 0 0是一個填充材料層，確保 在機械加工期間以及之後，出現平坦以及連續的表面以進 行隨後的層處理。圖16是圖14A從上至下的視圖。 可以重複圖9A-14A的方法步驟直到主要金屬700結 - 構成為它的最後形式。在這個時候，低應力填充材料1 300 邊下的任何東西通通除去’如圖1 5 A所示。接下來使用不 會貫質上蝕刻或是損壞主要金屬7〇〇或是第一種子層2⑽ 之蝕刻劑蝕刻掉次要金屬800，如圖15B所示。如果使用 參第三（犧牲）金屬作為低應力填充材料13〇〇，那麼第二8〇〇 以及第一（犧牲）金屬可以在一個步驟被蝕刻掉。例如，如 果人要至屬8〇〇是銅，並且低應力填充材料1300是懸浮 陶瓷粉的銅複合物，兩犧牲金屬因此可以在相同的步驟之 中使用相同的钱刻劑㈣掉。之後，第二種子$綱(如果 存在）可以被蝕刻掉，也使用不實質上會蝕刻或是損壞主要 金屬700或是第~種子層200的一種钱刻劑，如目15C所 厂、 遠下要至屬結構以及第一種子層200在基板 100上如果主要金屬7〇〇結構不打算黏附於基板1⑻上， 20 1291452 社麼第種子層200可以使用不會實質上影響主要金屬7〇〇 結構的一種蝕刻劑蝕刻掉。 s在本發明的—個實施例中，由主要金屬形成的結 構二一個微機械加工的彈簧，其與探針卡總成一起使用以 :武半導體元件，例如加州鮑德溫公園T_hdQwn技術股 八有限A司建構的疋件，或是加州以爾爪⑽的⑽爪心加 公司所建構者。在形成的結構是一個微機械加工彈箬時， :用這個方法可以在單一基板上建構很多微機械加工彈 厂使得很多彈簧可以一次與半導體晶片晶圓接觸。使用 二提出的方法允許在單一基板的大區域建構微機械加工 早兴並且貫質上降低目前在習知技術之方法的成本。 對描述指向本發明的特別實施例，許多修改 夕;7>知技術的人來說是顯W見的，ϋ此可以進行很 夕修改而沒有背離其中的精神。 乂 _些修改，因為它們將落於 圍。因此，本發明揭露的實施例是要在 =不是限制性的’本發明的範圍由附加申請專= 所丸出，而不是前面的描述 圍 及等效範圍内的所有改變是要包含在申其月中專的利犯圍的意義以 【圖式簡單說明】 驟圖解，用來形 圖卜16係說明本發明方法實施例之步 成固定在基板上的多層結構。 圖4Β說明圖4Α由上而τ沾日主 田上句下硯看的圖解 21 1291452 圖16說明圖14A由上向下觀看的圖解。 • 【主要元件符號說明】A situation where four people have multiple contact points to contact the semiconductor. Etching can be accomplished using dry engraving (g ion milling or sputter etching) or wet etching techniques. For example, in the case of a chromium/gold seed layer, a thirsty-type d-stone, which is composed of a gold residual agent, is engraved with a commercial chromium residue. The seed layer can also be patterned using a shadow mask or pick-up technique. Once the seed layer 200 has been etched, the remaining portion of the photoresist 21 can be removed as is known in the art as in FIG. 4A (including but not limited to dry etching techniques, "plasma or reactive ion etching, thunder" Shot assisted etching, excision, or is, for example, the use of acetone, methanol, IPA, acid stripping (like piranh hooks or other solvents and wet etching techniques known in the art). Figure 4B is Figure 4A from top to bottom. The structure of Figures 4A and 4B is a starting structure of a structure that is electrically isolated from each other, but can transmit electrical signals from one side of the substrate 100 to the other through the use of vias. If the microstructure must be electrically conductive to the via 1 10 'but must be electrically isolated from other structures, the second seed layer 500 can be applied to the substrate 1 (the first seed layer 2 has been etched) 14 1291452 is removed from the position and the seed layer 200 so that, as shown in Fig. 5a, the metal can have an electrical connection at the location of the electric ore. Preferably, the second seed layer 5 〇〇 compared with the first seed layer 2〇〇 Yes and has a different composition 'so it can be etched away without etching away the first seed layer 2 〇〇. In one embodiment, 300 is titanium and 2 〇〇〇 A copper is the second; layer 500 can The bond key is thin across the substrate 100 and the first seed layer. The second seed layer 500 is fabricated in many other compositions to maintain the spirit of the present invention. If a second seed layer is used, then a portion of the second seed layer will be removed. The main metal forming the microstructure may be in direct contact with the first seed layer 200. This can be done in a pattern as shown in Fig. 2B_4, in which the main (four) structure does not need to be electrically connected to the substrate (10), for example, In the case where the final form of the microstructure is not connected to the base (10), or the primary metal structure does not need to be electrically insulated from each other, the second seed layer 500 may not be necessary and the first seed layer may be patterned. The substrate has been formed, and the structure of the main metal 7 备 is prepared. In FIG. 6A, the photoresist 21 is applied on the first 2 〇〇 and the second seed layer (if the second seed layer 5 确 is confirmed ^ ; 1^ photoresist 2 1 〇 Therefore, the same photoresist applied to FIG. 2B or may be different light resistance: the thickness required for the layer, the polarity of the pattern (negative or positive) or any, and the other material of the photoresist 21G using a photomask (d) Exposure, such that holes 31 are formed in the photoresist 2H), as shown in the first layer of microstructures 6B and 7A. Although different reference numerals indicate the whole: the mask used during the period may have different patterns, it should be understood , 丨口一15 15 1291452 reticle 300, 3 30, 340, 3 50 may have the same pattern as the other reticle. Once exposed to the hole 210 in the photoresist 210, will be used to form the main structure of the microstructure Metal 700 can be electrowinned to the cavity 3丨〇 as shown in Figure 7B. The main metal 700 can be of any metal type, such as a nickel manganese alloy electroplated into the holes 310 in an amount of 2 Å to 25 microns. Since the primary metal 7 must be rubbed and polished to planarize the layer and provide a uniform controlled thickness, the primary metal 700 is typically plated slightly thicker than the desired final layer thickness. As shown in Fig. 7C, the remaining portion of the photoresist 21 is then removed in the manner described above. Now, as shown in Fig. 8A, the secondary (sacrificial) metal 8 is plated onto the second seed layer 500 (if it is different from the main seed layer) and the main metal 7 (10). The secondary metal 800 can be any electrodepositable metal that can be selectively etched or removed without substantially affecting the primary metal. The secondary metal 800 should also be a high stress metal, where in the tantalum conductor industry, = stress means 2 〇 OGPa and above. The primary metal 700 is completely covered with the secondary metal 8 ,, because the secondary metal 8 (9) provides mechanical stability to the main metal 700, and the secondary and secondary 8Q () metal surfaces become easier. Light B 210 is mechanically relatively weak, so if it squats around the only metal remaining around the main metal 700, the photoresist 21 can be peeled off and torn apart by the mechanical force...so it cannot provide a flat' The planar structure), the photoresist 210 also does not provide the horizontal support of the main metal in the mechanical addition. Moreover, if - an individual tries to mechanically Γ: often " = 70 ° structure without anything around it, will cause the main structure of the fragile main metal 700 to be seriously damaged, such as tearing 16 1291452 open part of the main metal 700 structure. Finally, the secondary metal provides an additional advantage in that it conveniently provides a conductively plated substrate, followed by a major metal layer that protrudes above the primary metal structure. For the heart only, overhang 0^] plating will require an additional thin film seed layer deposition step. In a . , ^ 1 mouth practice example. The person to the genus 700 can be copper and can be plated to a thickness equal to or slightly greater than the major metal 7 〇〇 (a few microns to tens of micrometers). Figure = Figure 8A shows the structure after the unit has been rubbed and polished so that the main full I 7 turns into the desired thickness. m As shown in Figures 8A and 8B, the first layer (or several layers of the secondary metal) of the secondary metal 8 can be plated across the entire substrate. However, the 800 layers of secondary metal that are plated across the entire S must be less thick or so much as to avoid any substrate - a non-negligible amount of tortuosity. Note that most of the secondary: the 8 〇 0 layer has no electric ore across the entire substrate, but only around the main metal 7 〇〇 structure and any of the following, the main part of the tongue (more layer) The metal structures are such that they add the required mechanical stability to the primary metal 700 structure during rubbing and polishing (machining) and provide a plating substrate to the subsequent overhang layer. ^ This can be more clearly shown in Figure 12B-14 Α φ, Main & β Q B. When the secondary metal 8 turns across the entire length of the substrate 100 (unlike the one indicated above), additional acoustic force is added to the substrate 1000. "The force has not bent the substrate 100. The substrate The warp of 100 makes it difficult or impossible to flatten the face. A dingy flattened the 匕 to a uniform height. However, lithography and subsequent machining required flattening, so when on the same substrate 100 It is unacceptable to construct several eji-large microstructures. Therefore, most of the secondary metal 8 layers should be plated to only one length and 17 1291452 degrees thick, making it add the main metal 700, structure Structural stability, but only so. In one embodiment of the invention, 'minor metal 800 is in-area electric ore, which covers 8〇% of the substrate 1〇〇 (the secondary metal is technically not in contact with the substrate) The substrate has been technically covered by an electro-mineral substrate. In an embodiment of the invention, the 'minor metal 8' is plated in a region of a cover substrate (10). In one embodiment of the invention, Minor: : _ in a cover substrate 1 〇〇 3 Electroplating in an area of 〇%. In an embodiment of the invention, the secondary metal 8 电 is in a 10%-area electric field covering the substrate (10). In an embodiment of the invention, electricity The area of the area where the metal is required to be metal is six times the area of the main metal 700. In one embodiment of the present invention, the area of the area 2 of the plating secondary metal is four times the area of the main metal layer. In a second embodiment of the present invention, the area of the region where the secondary metal 800 is plated is ten times the area of the main Meng 700 layer. In one embodiment of the present invention, the electric mine is secondary: the region of the genus _ Surrounding the main metal, and its thickness is more than 1 times the thickness of the main gold: 7. b is less than 2 times. In the figure, more photoresist 210 is spin-coated in the flattening of the unit: and Minor _ above the metal. The reticle 34 〇 is again used to convert the photoresist (four) map into the desired pattern 'to generate holes 31 〇 to the main metal 7GG of the figure and i〇A not shown - Layer. Then the main metal clock goes to the hole 31〇 as shown in Figure _. In the figure "A, remove the photoresist (four) And a new layer of photoresist 21 沉积 is deposited in Figure 11B. The reticle 350 is again used to pattern an area immediately adjacent to the main: metal 7 〇〇 structure such that the secondary metal _ can be electrically charged according to the principles described above. 1291452 is plated into the cavity 310, that is, does not span the entire substrate 1〇〇, as shown in i2A-13A. Depending on the number of major metal 7 (eight) structures to be formed on the substrate 1〇〇, it can be reported More of this secondary metal 8〇〇"island I. Then remove the rest of the photoresist 210. In Figure 13Β·14Α, apply a layer of low-stress filler material Β00 over the secondary metal 8〇〇, Hardening, and then machining the unit to the required thickness of the second layer of the main metal structure. The low stress fill material 1300 can be applied using a reticle or it can simply be applied across a substantially unitary substrate. Low stress filler material • can be a polymer (photoresist, epoxy, PMMA, phenolic resin, polyurethane or other suitable low stress filler) or a low stress third (sacrificial) metal . The polymer can be used around the secondary gold j _ during the machining process (but not around the primary metal) because the tolerances for flatness around the secondary metal 800 are increased. It is undesirable to have a polymer used as a low stress fill material 13GG. The polymer may not be compatible with subsequent processing, such as flattening = or high temperature processing. At this time, the low stress filler material - = three metal. The term low stress is used to mean 腑a or less. The second metal should be optimized for the second sacrificial metal to form a contrast Π: and eight, ^ and optimized; ^ U-metals around the main structural metal ratio of the ore into the high metal structure between the main metal structure " Supporting the structural stability of the primary metal structure during the machining planarization process). The most expensive jade substrate and the main all a 乍~ 二二 (sacrificial) metal should be compared with the general mechanical plus 'gu::: 谷易 and selectively soluble, reported easy to * 口 * 垣 垣 ( Including grinding and rubbing), low stress during deposition (electricity 19 1291452), and stable stress even after heat treatment (as would be encountered in subsequent processing steps including lithography and plasma processing). The candidate third metal includes porous, particle stabilized, and composite metals (copper, miscellaneous, silver, gold, tin, indium, boat-tin, etc.). For example, a copper composite having suspended ceramic powder can be used. Since the density of the low stress metal thus described will be less than the density of the secondary (sacrificial) metal, it will not be subject to the problem of plating of the secondary metal substantially across the substrate (ie, warpage, etc.). The low stress fill material 1300 is a layer of fill material that ensures a flat and continuous surface during and after machining for subsequent layer processing. Figure 16 is a top down view of Figure 14A. The method steps of Figures 9A-14A can be repeated until the primary metal 700 junction - is constructed in its final form. At this time, anything under the side of the low stress fill material 1 300 is removed as shown in Fig. 15. The secondary metal 800 is then etched away using an etchant that does not etch or damage the primary metal 7 or the first seed layer 2 (10), as shown in Figure 15B. If a third (sacrificial) metal is used as the low stress fill material 13 〇〇, then the second 8 〇〇 and the first (sacrificial) metal can be etched away in one step. For example, if a person wants to be copper and the low stress filler material 1300 is a copper composite of suspended ceramic powder, the two sacrificial metals can therefore be used in the same step using the same money engraving agent (4). Thereafter, the second seed, if present, can be etched away, using a money engraving agent that does not substantially etch or damage the primary metal 700 or the first seed layer 200, such as the 15C factory, far below To the genus structure and the first seed layer 200 on the substrate 100, if the main metal 〇〇 structure is not intended to adhere to the substrate 1 (8), the first seed layer 200 can be used without substantially affecting the main metal 7 〇〇 structure. An etchant is etched away. In one embodiment of the invention, the structure formed of the primary metal is a micromachined spring that is used with the probe card assembly to: a semiconductor component, such as the T-hdQwn technology stock limited by Baldwin Park, California. The construction of the A division, or the construction of the company's (10) claw heart plus company. When the resulting structure is a micromachined magazine, this method can be used to construct many micromachined magazines on a single substrate so that many springs can be in contact with the semiconductor wafer wafer at a time. The method proposed by the second method allows the construction of micromachining in a large area of a single substrate to prematurely reduce the cost of the current method of the prior art. It will be apparent to those skilled in the art that the description refers to a particular embodiment of the invention, and that the skilled person can make modifications in the future without departing from the spirit. _ _ Some modifications as they will fall behind. Therefore, the disclosed embodiments of the present invention are intended to be in the scope of the present invention, and the scope of the present invention is not limited by the appended claims. The significance of the monthly stipulations of the stipulations of the syllabus is illustrated in the following figure. The figure is used to illustrate the steps of the embodiment of the method of the present invention to form a multi-layer structure fixed on the substrate. Figure 4A illustrates an illustration of Figure 4A from top to bottom and a top view of the field. 21 1291452 Figure 16 illustrates an illustration of Figure 14A viewed from top to bottom. • [Main component symbol description]
100 ·基板 100a·面 100b ·面 1 1 0 ·通孑L 200·電鍍表面（第一種子層） ^ 210·第一光阻層 300、330、340、350 ·光罩 310 ·空穴 500 ·第二種子層 700 ·主要金屬 ' 800 ·次要（犧牲）金屬 13 00 ·填充材料 22100 · Substrate 100a · Face 100b · Face 1 1 0 · Wanted L 200 · Plating surface (first seed layer) ^ 210 · First photoresist layer 300, 330, 340, 350 · Photomask 310 · Hole 500 · Second seed layer 700 · Primary metal '800 · Minor (sacrificial) metal 13 00 · Filler material 22