TWI284738B - Probe for testing a device under test - Google Patents

Abstract

A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies. The probe includes a dielectric substrate with a conductive signal traces on a top side of the substrate. A conductive shield is supported on a bottom side of the substrate. A conductive via interconnects the conductor on the top side to the bottom side of the substrate.

Description

銮虢 93114360 1284738銮虢 93114360 1284738

可以高頻率測量積體電 五、發明說明（1) 發明所領龙 本發明係關於採針測量系統 路或其他微電子元件之電氣特性 先前技術 以供測量積體電路和其 迄今開發出許多種探測總成 他形式的微電子元件。一種代表性總成是使用電‘工Τ ^ 侧形成長形導電痕跡，做為訊號和地線。卡上形 上 孔，探針尖附於開孔附近的各訊號痕跡末端，‘她^ = 針尖朝下輻輳的徑向延伸陣列，以供與u呈t 之隔離很近的塾片選擇性連接。此種探針件 Hannon的美國專利3, 445,77〇號。然而，此種探測總成不 適用於高頻率，包含秭赫範圍的微波頻率，因為在如此 率時，針尖有感應元件的作用，又因無相鄰元件存在，可 =產生多少有電阻效果的寬帶特性之方式，藉電容效果適 虽抗衡此感應。因此，上述探測總成不適用於微波頻率， 口為在=狀探針大發生尚階訊號反射和實質上感應損失。 為獲得比上述基本探針卡系統稍高頻率之裝置測量， 已開發各種相關探測系統。此等系統見於例如Evans的美 國專利3,849,728號、菊池氏的日本專利公告卜2〇9,38〇號 、Sang等人。的美國專利4, 749, 942號、u〇等人的美國專利 4,593’243號，以及训8111^31的美國專利4,727,319號。 另二相關系統見於Kawanabe的日本專利公告60_223, 1 38號 社°己載一種探針總成，有針狀尖端，其尖端從共軸電纜狀 、’、。構延伸而非探針卡。此等系統之共同特點是，各針狀探High-frequency measurement of integrated power V. Description of the invention (1) The invention is based on the electrical characteristics of the needle measuring system or other microelectronic components. The prior art is used to measure integrated circuits and many types of probes have been developed to date. The assembly is in the form of microelectronic components. A representative assembly is to use the electrical 'work' side to form long conductive traces as signals and ground. The card has a hole in the shape, and the probe tip is attached to the end of each signal trace near the opening, 'her ^ = a radially extending array of needle tips facing downwards for selective connection of the slabs that are closely spaced from u. . Such a probe member is disclosed in U.S. Patent No. 3,445,77 to Hannon. However, such a detection assembly is not suitable for high frequencies, including the microwave frequency of the 秭 range, because at this rate, the needle tip has the function of the sensing element, and because there is no adjacent component, it can produce a number of resistance effects. The way of broadband characteristics, the capacitive effect is suitable to counter this induction. Therefore, the above-mentioned detection assembly is not suitable for the microwave frequency, and the mouth has a large signal reflection and a substantial induction loss in the = probe. In order to obtain device measurements at a slightly higher frequency than the basic probe card system described above, various related detection systems have been developed. Such systems are found in, for example, U.S. Patent No. 3,849,728 to Evans, Japanese Patent Publication No. 2,9,38, and Sang et al. U.S. Patent No. 4, 749, 942 to U.S. Patent No. 4,593, 243 to U.S. The other related system is disclosed in Japanese Patent Publication No. 60-223, No. 1 38 of Kawanabe, which has a probe assembly having a needle-like tip whose tip is from a coaxial cable shape. The extension is not a probe card. The common feature of these systems is that each needle probe

第7頁 1284738 曰 A號93114編 五、發明說明（2) 針尖絕緣部的長度限於緊圍著測試中元 、 間斷區和感應損失量減到最少。然而，此項二1 =便將 -C能的改進有限’因為此等探針的構造有各種 二二限制。例如在Lao等人的專利中，使用寬導電刀 木越各尖端與支持探針卡間之距離，而、 =最小，而此等痕而設計成彼此4 2::; 對應痕跡，同時在刀片間準確維持】量 的面對面間隔，以及針狀探針尖末端間之正確間距。 、目！始等人在美國專利4, 697, 143號中顯示一種探 =，L在Ϊ入=和探針尖之間提供控制下阻抗低損 。 等人的專利中，於氧化鋁基片的底側 =條狀導電痕跡之地線m線配置，則更在基片上 =輸線。在—端，各相關成對的地線痕跡和相 Φ二二鱗汛〜痕，，分別連接至共軸電纜接頭之外導體和 心導體。士此等痕跡的外端，⑨有耐磨導電性材料之面 驊沾^便可靠建立與待测試元件各墊片之通電，含陶鐵磁 U微波吸收材料層，裝在基材周圍以吸收各地線—訊 2 =痕跡形態的長度主要部份上面之疑似微波能。按照此 種構造，在探針尖對待测元件呈現控制下的高頻率阻抗 (例如50歐姆），而在此範圍内之寬帶訊號，例如DC至“秭 赫’即沿各地線-訊號-地線痕跡形態形成的共平面傳輸線 二從探針總成的一端行進至另一端，損失很少。L〇ckw〇〇d 等人專利中所不楝測總成，在較高微波頻率，無法提供令Page 7 1284738 曰 A No. 93314 Series V. INSTRUCTIONS (2) The length of the tip insulation is limited to the minimum of the test element, the discontinuity and the amount of induction loss. However, this two 1 = will limit the improvement of -C energy' because of the various two-two limitations of the construction of such probes. For example, in the patent of Lao et al., the distance between the tips of the wide conductive knife and the supporting probe card is used, and = is the smallest, and these marks are designed to correspond to each other 4 2::; Accurately maintain the amount of face-to-face spacing and the correct spacing between the ends of the needle tip. , eyes! U.S. Patent No. 4,697,143, the disclosure of which is incorporated herein by reference. In the patent of et al., the ground line on the bottom side of the alumina substrate = strip-shaped conductive traces is arranged on the m-line, and more on the substrate = the transmission line. At the end, the relevant pairs of ground traces and phase Φ 2 汛 汛 痕 ~ marks, respectively, are connected to the outer conductor and the core conductor of the coaxial cable joint. At the outer end of these traces, 9 the surface of the wear-resistant conductive material is used to reliably establish the energization of the gaskets of the components to be tested, including the ceramic ferromagnetic U-wave absorbing material layer, which is installed around the substrate. Absorb the line - News 2 = The suspected microwave energy on the main part of the length of the trace form. According to this configuration, the high-frequency impedance (for example, 50 ohms) under the control of the probe element is under control, and the wide-band signal in this range, for example, DC to "秭赫" is along the line-signal-ground line The coplanar transmission line formed by the trace pattern travels from one end of the probe assembly to the other end, and the loss is small. The L〇ckw〇〇d et al. patent does not measure the assembly, and at a higher microwave frequency, the order cannot be provided.

1284738 1284738 修正 曰 93U4360 五、發明說明（3) 效能’因而在微波探測技術上亟需順應調節 改進尖導體和非平坦元件墊片或表面陣列間之 例如Drake等°人的、開發多種高頻探測總成。此種總成载於 美國專# 4 國專利4,894,61 2號、cober &等人的 號，DraL等人的號和B〇1 1等人的美國專利第4, 871，964 電性Γ跡Λ 成包含基片’其底面形成複數導 ^ Μ ..集體形成共平面傳輸線。然而，在Drake等人 體例中，基片尖端有缺口，故可痕跡延伸 至刀開的齒末端，而基片是由φ Ύ 成，中辩^4中度可撓性之非陶瓷材料製 土 至少有限程度内，容許各齒相對於1284738 1284738 Amendment 曰 93U4360 V. Description of the invention (3) Efficacy 'Therefore, in the microwave detection technology, it is necessary to adjust and improve the high-frequency detection between the tip conductor and the non-flat component gasket or the surface array, such as Drake et al. Assembly. Such an assembly is contained in U.S. Patent No. 4,894,61 2, Cober & et al., Dra et al., and B.11 et al., U.S. Patent No. 4,871,964. The traces comprise a substrate whose bottom surface forms a complex number of conductors.. collectively form a coplanar transmission line. However, in the human case of Drake et al., the tip of the substrate has a notch, so the trace can be extended to the end of the tooth of the knife, and the substrate is made of φ ,, which is made of non-ceramic material made of moderately flexible. At least to a limited extent, allowing each tooth to be relative to

立撓屈，使痕跡末端可以空間符合待測元件上的不 平坦接觸表面。然而，i H 效能不足 UeU的探㈣成在高頻率的 關 一對彈 徑向對 纜的中 的末端 。按照 在彈簧 構件組 構。此 彈簀片The deflection is made so that the end of the trace can spatially conform to the uneven contact surface on the component to be tested. However, i H is not efficient enough. UeU's probe (4) is at the end of a high-frequency pair of radial radial cables. Follow the spring member structure. This magazine piece

於上述Boll等人專利所述探測總成，接地導地包 簧片構件’其後部容納在小型共軸電纜末端形成 立長孔内，以供與該電纜的圓筒形外導體通電。 央導體延伸超出電纜末端（即利用外導體和内介賀 界定），並逐漸斜縮形成銷狀構件，纟有圓滑尖端 此構造，中心導體之銷狀延長部呈隔開設置，一 片構件各前部中間的中心位置，因而與此等彈簧 合形成大約相當於地線-訊號〜地線共平面傳輸線， 特殊構造的優點是，電纜中心導體的銷狀延長部 構件的各4 4，可彼此單獨運動，故此等構件的In the probe assembly described in the above-mentioned Boll et al. patent, the grounding guide wrap member ' is rear-fitted in the end of the small coaxial cable to form an elongated hole for energizing the cylindrical outer conductor of the cable. The central conductor extends beyond the end of the cable (ie, defined by the outer conductor and the inner conductor), and is gradually tapered to form a pin-shaped member having a rounded tip. The pin-shaped extension of the center conductor is spaced apart, one piece of each member The central position in the middle, and thus the springs, form approximately the ground-signal-ground-coplanar transmission line. The special configuration has the advantage that the 4 4 of the pin-shaped extension members of the cable center conductor can be separated from each other. Movement, therefore

12847381284738

案號 931143fU) 五、發明說明（4) 合接:與:::件 =力件的末Γ被緊逼於待測元件接=2 頻率時，以不良界定方式變化。 ，、疋冋U波Case No. 931143fU) V. INSTRUCTIONS (4) Joining: and::: Pieces = The end of the force piece is pressed when the component to be tested is connected to the frequency of 2, and is changed in a badly defined manner. , 疋冋U wave

Burr等人的美國專利第5, 56 5, 788號揭示一種微波 針，含有共軸電纜之支持段，包含被外導體共鬥 導體。微波探針的尖段，包含中央訊號導體，卩：一或以 上的地線導體，通常是彼此以並式關係配央 號導體之共同平面，以便形成控制下阻抗結構：訊 通電至内導體，而地線導體通電至外導體；- 開“導ϊί 尖端斜縮’在導電性指桿尖端有 此相對彈性撓屈，儘管有屏 、’離]八二同平面，以便容許探測元件具有不平坦表面。 包含丘ί電ϊ f: ’Bur r等人的專利揭示-種微波探針， ί 持段，含由外導體共軸包圍之内導體， =頂C圖。微波探針的尖段包含訊號、線，二 Ϊ附設在二探針指桿與内導體連接。*屬性屏蔽 。接地指桿置於鄰接訊號線導體，並經 1體 触刻溝連接至金屬性屏㉟。訊號導體接電至以基= 1284738 修正 曰 皇號93114邰〇_ 五、發明說明（5) 平面接電至外導體。訊號導體曰 溝接至屏蔽)各有端部，延伸妾也導體刻 ，以容許探測元件具有j j:存二並離開共同平面 示之結構，旨在 表面。雖然Burr等人專利揭 高微波頻率時，傾；且：圍的均勻結構，但其均勻性在 貝向於具有不均句回應特性。 裝置，ί ί ΐ : : 等人揭示的共平面有指桿探測 二種情2:、i::桿組態和微條組態，有指桿伸出。在 地線指桿，並將地j指桿，把訊號指桿電氣耦合至 晶圓的不同=所：；；=晶圓環境互動。雖然在 變化，典型上以未知方』以U=電磁場間之互動會 不是不可能，也是難以在待 >丨_ 2未知互動變化，即使 條件。 在待測70件探測中正確校正出環境 同時使用複數探針探測晶圓 ♦曰桿支持件，諸如介質基材，鱼 ^串讯。此外， 成重大電容，有礙高頻率測量；;f #間之ϋ域會造 頻率 Γ；h ^m ^ =校正視稍後在待測元件實際探；中，ΐί::校正。 動而定’在此意外非校正效果的檢驗後，；；：：：：； 第11頁 1284738U.S. Patent No. 5,565,788 issued to U.S. Pat. The tip of the microwave probe, comprising a central signal conductor, 卩: one or more ground conductors, usually in a common relationship with the central conductors in a parallel relationship, in order to form a controlled impedance structure: the signal is energized to the inner conductor, The ground conductor is energized to the outer conductor; - the opening "guide tip" is deflected at the tip of the conductive finger, although there is a screen, 'off' 82 plane, in order to allow the detector element to be uneven Surface: Contains 丘 ϊ ϊ f: 'Burr et al.'s patent reveals a microwave probe, ί holding segment, containing an inner conductor surrounded by an outer conductor, = top C. The tip of the microwave probe contains The signal, the wire and the second wire are connected to the inner conductor of the two probe fingers. * Attribute shielding. The grounding finger is placed on the adjacent signal line conductor and connected to the metallic screen 35 via the 1 body touch groove. The signal conductor is connected. To the base = 1284738 to correct the 曰皇号93114邰〇 _ five, invention description (5) plane connected to the outer conductor. Signal conductor 曰 groove to the shield) each end, the extension 妾 also conductor engraved to allow the detection component Have jj: save two and leave the common The structure shown is intended for the surface. Although the Burr et al. patent discloses a high microwave frequency, it has a uniform structure, but its uniformity has a non-uniform response characteristic in the direction of the microwave. Device, ί ί ΐ : : The coplanar revealed by others et al. has two kinds of situations: 2:, i:: rod configuration and micro strip configuration, with finger sticking out. On the ground finger, and the ground j finger, the signal The difference in the electrical coupling of the finger to the wafer =;;; = wafer environment interaction. Although in the change, typically the interaction between the unknown and the U = electromagnetic field is not impossible, it is difficult to wait > _ 2 Unknown interactive changes, even conditions. Correctly correct the environment in the 70 probes to be tested while using the multiple probes to detect the wafer ♦ mast support, such as the dielectric substrate, the fish crosstalk. In addition, into a significant capacitance, there are Obstacles high frequency measurement;; f # between the domain will create frequency Γ; h ^m ^ = correction depends on the actual component to be tested later; ΐί:: correction. Dynamically 'unexpected non-correction effect here After the inspection, ;;::::; Page 11 1284738

五、發明說明（6) 曰 修正 如此極端頻率時，能量是以「不良模式」產生，而非以主 牛％的模式。此「不良模式」造成從訊號路徑意外漏電， 因而使訊號完整性劣化。本發明人等又想到此「不良模式 」涉及在地平面的共振能，是地面路徑間斷所致，例如包 含地平面與電纜外部間的連接，以及地平面内之感應。此 地平面共振能造成至待測元件的訊號路徑之不可預計能量 變化’因而降低效能。此項衰減在較低操作頻率時不顯著 ’因此，沒有動機要修飾現有探針設計，以消除或降低其 效應。V. INSTRUCTIONS (6) 修正 Correction At such extreme frequencies, energy is generated in a “bad mode” rather than in the mode of the main bull. This "bad mode" causes an accidental leakage from the signal path, thus degrading signal integrity. The inventors have also conceived that the "bad mode" relates to the resonance energy at the ground plane, which is caused by the discontinuity of the ground path, for example, the connection between the ground plane and the outside of the cable, and the induction in the ground plane. This ground plane resonance can cause unpredictable energy variations to the signal path of the component under test' thus reducing performance. This attenuation is not significant at lower operating frequencies. Therefore, there is no incentive to modify existing probe designs to eliminate or reduce their effects.

參見第3圖，半硬性共軸電纜4 0後端通電至接頭（圖上 未示）°共軸電纜4〇通常含有内導體41、介質材料42和外 2體43 °共軸電纜40同樣可視需要含有外材料層。電纜40 月1J端宜保留自由懸空，在此情況下，用做探針的探測末端 活動支持件。Referring to Figure 3, the rear end of the semi-rigid coaxial cable 40 is energized to the connector (not shown). The coaxial cable 4〇 usually contains the inner conductor 41, the dielectric material 42 and the outer 2 body 43 ° coaxial cable 40 is also visible It is necessary to have a layer of outer material. The cable should be left free at the 1J end of the cable. In this case, use the probe as the probe end active support.

微條型探針尖80包含介質基片88。附設在共轴電纜40 末端。電纜4 0底側切開形成架8 5，而介質基片8 8附設於架 8 5 °另外’介質基片8 8可利用從電纜切開的朝上架，或無 木的電境末端支持。亦參見第4圖，本質上宜平坦的導電 性屏蔽9 0 ’附設在基片8 8底部。導電性屏蔽9 0可例如為薄 ^電性材料（或其他），附設於基片8 8。使用低擠型的一般 平坦導電性材料，屏蔽9 0較不易因意外接觸待測元件，而 干擾待測元件有效探測之能力。導電性屏蔽9 0電器耦合於 導體43 ’以形成地平面。另一導體43典型上接地，雖然The microstrip probe tip 80 includes a dielectric substrate 88. Attached to the end of the coaxial cable 40. The bottom side of the cable 40 is slit to form the frame 85, and the dielectric substrate 8 is attached to the frame 85. The other 'media substrate 8' can be supported by an upwardly facing frame that is cut from the cable, or without a wooden end. Referring also to Fig. 4, an intrinsically conductive conductive shield 90 is attached to the bottom of the substrate 88. The conductive shield 90 may be, for example, a thin electrical material (or other) attached to the substrate 88. With a low-squeeze, generally flat conductive material, the shield 90 is less prone to accidental contact with the component under test and interferes with the ability of the component under test to be effectively detected. A conductive shield 90 is electrically coupled to conductor 43' to form a ground plane. The other conductor 43 is typically grounded, although

1284738 ___案號93114360___年月日 修正___ 五、發明說明（7) 外導體43可具有任何適當電壓電位（無論DC或AC)。導電性 屏蔽90宜覆蓋基片88的全部下表面。另外，導電性屏蔽90 可覆蓋超過5 0%、60%、70%、80%、90%和/或在基片 88相反側導電性訊號痕跡長度大部份（或更多）正下方區 域。 基片8 8上表面支持一或以上的導電性訊號痕跡9 2。導 電性痕跡9 2可例如使用任何技術澱積，或另外利用基片上 表面支持。導電性痕跡92與共軸電纜40的内導體41相互通 電。共軸電纜40和導電性痕跡92的内導體41，通常帶有訊 號來往於待測元件。導電性痕跡92連同利用介質材料8 8分 開的屏蔽層9 0，形成一種微條傳輸結構。在屏蔽層9〇和導 電性痕跡92的上、下和/或中間，可視需要含有其他層。 為減少上述意外高頻率訊號衰減的效應，本發明人等 決定訊號路徑可含有導電性蝕刻溝9 4，貫穿通過基片8 8。 J電性蝕刻溝94提供從基片上表面到基片下表面的訊號路 =傳送方式。導電性蝕刻溝94避免需用到從基片88末端伸 =的導，性指桿，否則在伸出指桿和基片88末端間會造成 ^大電容。導電性蝕刻溝94提供基片88 —側至基片88另一 貝;：路徑’其方式為在導電性蝕刻溝94和基片Μ間無空氣 延柚扣至）在基片88厚度的大部份。此外，屏蔽層90最好 I伸超過蝕刻溝94，以提供額外屏蔽。 至蝕圖，基片⑽的下表面顯示觸點顛簸100，通電 至钱刻溝94和痕跡92，在吴88知®π 士 ，在 在暴片⑽和屏蔽90下表面下方延伸 “畜中可用來與待測元件接觸。導電性屏蔽9〇在觸 1284738 Λ_η 修正 曰 案 5虎 五、發明說明（8) 點「顛簸」1 0 0周園人士「 π 形ί，觸點）。須知觸點可採取任何適當 或長带莫雷，ί中悲化結構、導電性結構、針狀結構， 對外部電磁場的m9°可側向圍繞導電性顛簸，增加 電性屏蔽90，會減少來^延伸超越導電性顛簸100的導 途而言，一或以上显—自/、他採針的串訊。對若干探測用 .« ° 屏敝90可視需要設有觸點102。屏蔽層 雖然訊號線典型上具=傳輸線控制的阻抗結構。 導電性路徑同樣可為任;而；蔽具有地電位’二 對於地面變化。 八他、，且態，啫如平衡化輸入，相 參見第6圖，探針可椟田& & , 的外導體43接至上屏蔽11〇以。共軸電纜 供共軸電纜和探針末端間的順利接决電至地。此項設計提 錐部尖端時受到屏蔽。 、刊過渡。所以，探針過渡到 上屏蔽110具有斜縮圓柱部，1义山 後端輪廓係沿周與共軸外導體 /、别端為斜縮尖端，而 可能產生邊緣場影響探針測量的f，觸，故外導體與屏蔽 理，屏蔽11 0可視需要使用任何其^伤之間，沒有間隙。同 延伸超過蝕刻溝，形成實質上密、卩他。形狀。此外，前端宜 場。屏蔽減少寄生耦合至任何外，故在前端減少邊緣 金屬，可減少總成的複雜性。p j結構’而屏蔽構成單件 製程形成。屏蔽亦可澱積於复 子由薄箔製成’可由 /、他材料製成。1284738 ___ Case No. 93114360___ Year Month Day Correction___ V. INSTRUCTION DESCRIPTION (7) The outer conductor 43 can have any suitable voltage potential (whether DC or AC). Conductive shield 90 preferably covers all of the lower surface of substrate 88. Alternatively, the conductive shield 90 can cover more than 50%, 60%, 70%, 80%, 90% and/or a region directly below the majority (or more) of the length of the conductive signal trace on the opposite side of the substrate 88. The upper surface of the substrate 88 supports one or more conductive signal traces 9 2 . The conductive traces 92 can be deposited, for example, using any technique, or otherwise using surface support on the substrate. The conductive traces 92 are electrically connected to the inner conductors 41 of the coaxial cable 40. The inner conductor 41 of the coaxial cable 40 and the conductive traces 92 typically carries signals to and from the component under test. The conductive traces 92 together with the shield layer 90 separated by the dielectric material 8 8 form a microstrip transfer structure. Other layers may optionally be included above, below and/or in the middle of the shielding layer 9 and the conductive traces 92. In order to reduce the above-described effect of unexpected high frequency signal attenuation, the inventors have determined that the signal path may include a conductive etching trench 94 extending through the substrate 88. The J electrically etched trench 94 provides a signal path from the upper surface of the substrate to the lower surface of the substrate. The conductive etch trench 94 avoids the need for a conductive finger that extends from the end of the substrate 88, which would otherwise cause a large capacitance between the extended finger and the end of the substrate 88. The conductive etch trench 94 provides the substrate 88 - side to the other side of the substrate 88; the path 'in the manner that there is no air extension between the conductive etched trench 94 and the substrate" to the thickness of the substrate 88 Part. In addition, shield layer 90 preferably extends beyond etch trench 94 to provide additional shielding. To the etched pattern, the lower surface of the substrate (10) shows the contact bumps 100, energized to the money engraved trenches 94 and traces 92, at the bottom of the subsurface (10) and the lower surface of the shield 90. Come into contact with the component to be tested. Conductive shield 9〇 Touch 1284738 Λ_η Correction case 5 Tiger 5, Invention description (8) Point "Bumpy" 1 0 0 Zhouyuan people "π-shaped ί, contact". Can take any appropriate or long belt Morey, ί in the structure of tragic, conductive structure, needle-like structure, m9 ° to the external electromagnetic field can be laterally around the conductive bumps, increase the electrical shielding 90, will reduce the extension In terms of the conduction of the conductive bump 100, one or more displays - from /, he picks up the string of signals. For a number of probes. « ° Screen 90 can be provided with contacts 102. Although the shield is typically on the signal line The impedance structure with = transmission line control. The conductivity path can also be any; and; the cover has the ground potential 'two for the ground change. Eight, and the state, such as the balanced input, see Figure 6, the probe can The outer conductor 43 of Putian &&, is connected to the upper shield 11〇. The shaft cable is connected to the ground between the coaxial cable and the probe end. This design is shielded at the tip of the taper. The transition of the probe to the upper shield 110 has a tapered cylindrical portion, 1 The back-end profile of Yishan is inclined along the circumference and the outer conductor of the coaxial, and the other end is a tapered tip, which may cause the fringe field to affect the probe measurement f, touch, so the outer conductor and shielding, shielding 11 0 can be used any There is no gap between the wounds, and it extends beyond the etching groove to form a substantially dense and sturdy shape. In addition, the front end is suitable. The shielding reduces parasitic coupling to any outside, so the edge metal is reduced at the front end, and the assembly can be reduced. The complexity of the pj structure 'and the shield constitutes a single piece process. The shield can also be deposited on a compound made of thin foil 'can be made from / material.

1284738 修正 曰 A號93114遍 五、發明說明（9) =蔽構件9〇在導電性痕跡下方，於指桿和持有待測 =午的夾頭間延伸。所以，屏蔽有助於阻礙地平面發生丘 又莫式’否則會干擾並劣化來自待測元件的訊號。 ，參見第7圖，在另類具體例中，可設有導電性指桿112 ’或其他長形導電性元件，接電至蝕刻溝。一或以上之額 卜=面‘；J：干1 1 4可接電至下屏蔽材料。如有需要，各指桿、 2分別含有懸臂部，向下延伸離開基片。懸臂部宜配置成 彼此橫向隔開關係，以便協合形成控制下的阻抗傳輸線， 在電纜上各導體和待測元件上各墊片間造成低損失過渡。 0雖然使用含有彎曲表面的上屏蔽110，對訊號完整性 提供改進，但上屏蔽的結構變化，有在高頻率對訊號完整 性引進若干限制的傾向，因而有礙效能。例如，上屏蔽的 高度變化，會改變訊號導體全長的電磁場形態。此外，上 屏蔽發生增加生產複雜性。此外，在大多數情況下，微波 微條傳輸結構包容在罩殼内，諸如導電性外殼，因此減少 包含上屏蔽結構的動機。 為進一步提高在高頻的效能，本發明人等顧及基片材 料的效果。在許多情況下，介質基片材料的介質常^高， 諸如Al2〇3的介質常數為9·9。介質常數高的材料有在其内 集中電磁場的傾向，因而降低容易受到其他元件影響的電 磁場。此外’基片厚度典型上為250 —5〇()微米，以提a供機 械穩定性。因此，電磁場有集中在基片内的傾向。 參見第8圖，雖然考慮到如此基片，本發明人等瞭解 f挽性隔膜基材可改用更硬質基片88。隔膜材料之一/例載1284738 Amendment 曰 A No. 93114 times V. Description of the invention (9) = Shielding member 9 〇 is below the conductive trace and extends between the finger and the chuck holding the test to be tested. Therefore, the shielding helps to prevent the ground plane from happening, otherwise it will interfere with and degrade the signal from the component under test. Referring to Fig. 7, in another specific example, a conductive finger 112' or other elongated conductive element may be provided to be electrically connected to the etching trench. One or more of the amount 卜 = face ‘; J: dry 1 1 4 can be connected to the lower shielding material. If desired, each of the fingers, 2, respectively, includes a cantilevered portion that extends downwardly away from the substrate. The cantilever portions are preferably arranged in a laterally spaced relationship to each other to form an impedance transmission line under control, resulting in a low loss transition between the conductors on the cable and the pads on the component to be tested. 0 Although the use of the upper shield 110 with a curved surface provides an improvement in signal integrity, the structural change of the upper shield has a tendency to introduce a number of restrictions on signal integrity at high frequencies, thus hindering performance. For example, the height change of the upper shield changes the electromagnetic field shape of the full length of the signal conductor. In addition, the upper shield occurs to increase production complexity. Moreover, in most cases, the microwave microstrip transmission structure is housed within a casing, such as a conductive outer casing, thereby reducing the motivation for including the upper shielding structure. In order to further improve the performance at high frequencies, the inventors have considered the effect of the substrate material. In many cases, the medium of the dielectric substrate material is often high, such as Al2〇3 having a dielectric constant of 9.9. A material having a high dielectric constant tends to concentrate an electromagnetic field therein, thereby reducing an electromagnetic field that is easily affected by other components. In addition, the thickness of the substrate is typically 250 - 5 Å () microns to provide a mechanical stability. Therefore, the electromagnetic field has a tendency to concentrate in the substrate. Referring to Fig. 8, although the substrate is considered, the inventors have learned that the f-bearing separator substrate can be changed to a more rigid substrate 88. One of the diaphragm materials / case load

1284738 Ά 一案 5虎 θ 五、發明說明（10) 於美國專利5，914 613缺& 。-般而言，基於隔膜：探針m同其他引證列入參考 性）基片，上面支持有痕跡，連同特支m換性（或半可挽 操針的隔膜部由犧牲性基片、、八上的接觸部。 材料位於此凹部内，痕要；^凹•。導電性 質材料位於痕跡上或下。妙：而：立於其上，❿可撓性介 針尖、痕跡和隔膜材料。；Uj 5基片即移動離開探 通常是使用蝕刻溝連接至# ° 待測兀件接觸，而痕跡 ^，、^。、二：以/例如基片⑻大為減齣。、 ϊ ί Λ Λ，/Λ 低二6、5…視利特殊材料而定， ΐ的m:介質常數的基片不適宜，但使用大為減 溥的基片，連同較低介質常數 的理論頻率範圍到數百GHZ。大/ =冋有效机说傳輸 材料定位在比較厚陶質某片λ為/薄的基片可將下屏蔽 ^ ^ . ρρ ^ , 、土片大為接近訊號痕跡，所以傾向 内，本發=Γΐί場於其間。把電場緊密拘限於隔膜材料 二定==定隔膜材料的高頻效能，可藉上屏蔽材 相對岸靠、d:之上而提向”匕外’上屏蔽材料應同樣 m:徑，故定位在離原先所用訊號痕跡甚遠 料，通常是不夠的。因此，屏蔽材料應在 隔，頂部應以訊號痕跡和上屏蔽材料間之介質形態化 。$夕情況下，訊號痕跡與其正上面的上屏蔽間之距離 ，應不超過訊號痕跡和下屏蔽材料間距離的十倍。上述距 離以7、5、4或2倍更好。1284738 Ά 1 case 5 tiger θ 5, invention description (10) in the US patent 5,914 613 lack & - Generally speaking, based on the membrane: the probe m is included in the reference) with other references, the support is supported on the trace, together with the special support m (or the semi-tradable needle portion from the sacrificial substrate, The contact part of the eight. The material is located in the recess, the mark is required; ^ concave • The conductive material is located above or below the trace. Wonder: and: on it, the flexible tip, trace and diaphragm material. The Uj 5 substrate, that is, moving away from the probe, is usually connected to the #° to be tested by the etching trench, and the traces ^, ^, . , 2: are greatly reduced by, for example, the substrate (8)., ϊ ί Λ Λ, /Λ Low two 6, 5... depending on the particular material, the m: dielectric constant substrate is not suitable, but the use of a greatly reduced substrate, together with the theoretical frequency range of lower dielectric constants to hundreds of GHZ Large / = 冋 effective machine said that the transmission material is positioned in a thick ceramic material λ is / thin substrate can be shielded ^ ^ . ρρ ^ , , soil sheet is close to the signal trace, so the tendency, the hair =Γΐί field in between. The electric field is tightly constrained to the diaphragm material 2. The high frequency performance of the diaphragm material can be borrowed The shielding material is relatively close to the shore, d: above and the shielding material on the "outside" should be the same m: diameter, so it is usually not enough to locate the traces from the original signal. Therefore, the shielding material should be separated. The top should be shaped by the signal trace and the medium between the upper shielding materials. In the case of the eve, the distance between the signal trace and the upper shield above it should not exceed ten times the distance between the signal trace and the lower shield material. More preferably 7, 5, 4 or 2 times.

12847381284738

^S_i3114360 五、發明說明（11) 當隔膜質的探針與待 情況下，大多數探斜I #u躅日守，在施加額外壓力 7双休隹卞會滑過墊片。此工苜、、風 h 片增加壓力下，彎角探針和/或共軸=疋在對測式墊 限度的滑動可用於「清除乂觀屈曲的結果。有 墊片上，至少1^ = I 物層，否則會積集在接觸 況下，測試墊片典型上較小，合所致。在❹情 伤巧動，以致捺針滑脫測試墊片。若 ^ 損壞探針和/或接觸塾片 ^太大壓力’可月匕 力和滑動。 應維持可接受範圍的壓 參見第9圖 變形加以對照 為高剛性探針< 前的最大滑動！ ，圖示為探針所施力量與施力結果的探針 以供說明。線40 0為低剛性探針，而線4〇2 直立線4 04表示探針容易脫落接觸墊片之 因此在與接觸墊片接觸後。探針行程的最 :直立線40 6表示-般可接受的探針最小滑動距離 確保乳化物層可充分冑以免累積在接觸墊片上之距 ’因此在與接觸墊片接觸I，一般可接受的探針最小行 =距離。典型上有用的行程範圍大約5〇_2〇〇微米。水平線 4〇8表不探針可施家的最大可接受力量，使對探針和/或 J觸墊片之損失減至最小。水平線41〇表示探針可應用的 小可接受力量，施以充分壓力打破氧化物層，否則會積 集在接觸墊片上。 可見有可接受的行經長方形區（在此例中），由探針對 ，觸墊片施力。對低剛性探針4 〇 0而言，顯示發生可接受 楝測之範圍420。可見此距離比直立線404和406間的最大^S_i3114360 V. INSTRUCTIONS (11) When the diaphragm probe is in the case, most of the probes are swayed, and after applying additional pressure, 7 pairs of squats will slide over the shims. Under the increased pressure of the work piece and the wind h piece, the angle probe and/or the coaxial axis = 滑动 sliding in the limit of the test pad can be used to "clear the result of the buckling. There is a gasket, at least 1 ^ = I layer, otherwise it will accumulate under contact conditions, the test gasket is usually smaller and combined. In the case of sorrow, the needle is slipped off the test gasket. If the probe is damaged and/or contact塾片^ too much pressure' can be used for lumbar force and sliding. The pressure should be maintained within an acceptable range. See Figure 9 for the deformation and contrast for the high-rigidity probe< front maximum sliding!, the illustration shows the force applied by the probe. The probe of the force application result is for explanation. The line 40 0 is a low-rigidity probe, and the line 4〇2 upright line 409 indicates that the probe is easily detached from the contact pad and thus after contact with the contact pad. Most: Upright line 40 6 indicates that the minimum acceptable sliding distance of the probe is such that the emulsion layer can be sufficiently licked to avoid accumulation on the contact pad. Therefore, in contact with the contact pad, the generally acceptable probe is minimal. Line = distance. Typically useful range of travel is approximately 5 〇 2 〇〇 microns. Horizontal line 4 〇 8 The maximum acceptable power of the probe can be applied to minimize the loss of the probe and/or the J-touch pad. The horizontal line 41〇 indicates the small acceptable force that the probe can apply, and the full pressure is applied to break The oxide layer, otherwise it will accumulate on the contact pads. It can be seen that there is an acceptable rectangular area (in this case), which is applied by the probe pair and the contact pad. For the low rigidity probe 4 〇 0, The range in which the acceptable guess is displayed is 420. It can be seen that this distance is greater than the maximum between the vertical lines 404 and 406.

12847381284738

案號931彳心叩 五、發明說明（12) 範圍為小，因此，操作人員必須小 剛性探針4〇2 ’顯示發生可接 二4 = :;小心；制其行程。&，探針剛性需二制(=員 以建立可接受的操作區域。再 二控制（很難）， 行程之間有某種關係、。滑動小有問題，控制的 ^ ^ ^ ^ ；( 鏡）已告接觸。滑動大也有問題， =i頁被 力量供良好接觸阻力之前，合、、典”、、木針大在侍到充分 會調諧其比率，藉變化探=墊片。預載提供機 ，似乎為率為 猎用較具屈曲性探針加上預载本土明人等明瞭 受區域内更輕易獲得修飾的力量：二；：力：偷在可接 接受探測範圍，即在長者更多的可 即可達成此項預載。若使用低Λ/探針向上挽曲， 力量形態444 (見第11圖）。須知木針400，則可得修飾 身的結果，-般與無預載探針且///=48 ’是探針本 範圍，又可維；= 越”多可用的探測 -般可接受的最低力量之範圍；$二”力*’至接觸 修飾i:“的斜度可因選用更屈曲性探針ΐ 讀相對於接觸墊片之定向而緩和。此預載系統雖然 1284738 -^1—93114360 曰 修正 五、發明說明（〗3) 特別有用於隔膜型探針，_ 進行探测踯量時，f樣可用於其他探測技術。 要的考慮。探針尖可針與待測元件間的接觸阻力量重 以相關顯微鏡有效勒成達成大接觸阻力，同時又容許 典型上構成方式為積：探針尖438(見第12圖） 4 5 2。探針尖4 5 4宜從傾叙有對對立的傾斜表面4 5 0和 片構成探針尖，在Α Η、，表面450和452伸出。可用犧牲基 ’若有需要上面可；痕生：：；：：：：有導電性材料Case No. 931 叩 叩 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 &, the rigidity of the probe needs two systems (= to establish an acceptable operating area. Second control (difficult), there is a relationship between the strokes. The sliding is small, the control ^ ^ ^ ^ ; The mirror has been touched. There is also a problem with the sliding. If the page is energized for good contact resistance, the combination, the code, and the wooden needle will be tuned to the ratio, and the change will be used. Providing the machine, it seems that the rate is better for the hunting with the more flexible probe plus the preloaded local Ming people, etc. The force that is more easily modified in the area is: 2;: Force: stealing can be accepted in the detection range, that is, in the elderly More can be achieved with this preload. If you use the low Λ/probe to pull up, the force form 444 (see Figure 11). The wooden needle 400, you can get the result of the modification, - normal and no Preloaded probe and ///=48 'is the range of the probe, but also dimensionable; = the more "multiple available probes - the range of minimum acceptable forces; the $2" force *' to the contact modifier i: " The slope can be moderated by the orientation of the more flexural probe 相对 relative to the contact pad. This preload system is 1 284738 -^1—93114360 曰Revision 5, invention description (〗 3) Especially for diaphragm type probes, _ For probing detection, f-sample can be used for other detection techniques. The amount of contact resistance between the components is measured by the relevant microscope to achieve a large contact resistance, while allowing the typical configuration to be: probe tip 438 (see Figure 12). 4 5 2 From the narration, there is a pair of opposite inclined surfaces 450 and a piece of probe tip, which protrudes at Α Η, surfaces 450 and 452. Available sacrificial bases can be used if necessary; traces::;:::: Conductive material

證文獻。其後第5留91t613號，以及所有弓I 料。探針尖438可接受，\ 下f針大、痕跡和隔膜材 到接近探針尖438“域然觸時，難以見 為改進探測時的探針„、438 、^ 〇和452之故。 可昔而升· J : 可視性，業已確定探針454 了#面打磨’或除去探針一部份，如第 探針-部份’以待測元件探料，可達成更大的可=去 見第1 3圖。又須知探針構造方式可不需除去一部份探針。 炎部454以大約12//m X i2//m為佳，以約2-3密耳的直立 行程，導致約1密耳的縱向尖端消除。探針同樣可持續唇 部4 6 0 ’對尖端4 5 4提供額外結構支持，探針背侧4 6 2甚至 可相對於探針基部464平面有底缺。另外，探針背侧46 2可 在相對於探針基部464平面之垂直（不論有無底缺）3〇度以 内。 上述結構造成的接觸阻力會極低，尤其與鶴探針等他 類探測系統相較。參見第1 4圖，在未形態化鋁上之接觸阻 1 第19頁 1284738 案號 93114360 五、發明說明（14) 力，經5000接觸週期，低於30ιηΩ，遠比習用鎢探針（豆接 :::Α=3〇ΠΐΩ)為低。參見第15圖，探針保持與銘堅 片接觸，接觸阻力以時間為函數表示。如 V知時: I矣鎢奴針在同期内顯示大變化，典型上 m Ω到75m Ω不等。 伐碉阻力伙35 電纜ί m十上的另一考量是不同傳輸結構的特性。丘軸 共軸電率傳輸特性。在隔膜結構内，連接於 構者包含構具有優良高頻率特性。連接至隔膜結 供共平面傳輪’諸如單觸點或-對地面觸‘點。觸點提 遜。為達成可^、f ’其帶寬能力比共軸電€和微條結構為 150微米長。更择\的帶寬，本發明人等確定觸點應不超過 )1 0 〇微米， κ觸點應不超過（例如離平坦表面的高声 5不~過75微米，或不超過55微米。Documentary evidence. The fifth remaining 91t613, and all the bows. The probe tip 438 is acceptable, and it is difficult to see the probes „, 438, 〇, and 452 for improved detection when the f-needle is large, the traces, and the diaphragm are close to the probe tip 438. It can be as good as possible. J: Visibility, it has been determined that the probe 454 has been surface-grinded or a part of the probe has been removed, such as the probe-partial part, with the component to be tested, a larger can be achieved. Go to Figure 13. It is also known that the probe construction method eliminates the need to remove a portion of the probe. The inflammatory portion 454 is preferably about 12//m X i2/m, with an upright stroke of about 2-3 mils, resulting in the elimination of about 1 mil of the longitudinal tip. The probe also maintains the lip 46 0 ' to provide additional structural support to the tip 4 5 4 , and the probe back side 4 6 2 may even have a bottom defect relative to the probe base 464 plane. Alternatively, the probe back side 46 2 can be within 3 degrees of vertical (with or without a defect) relative to the plane of the probe base 464. The contact resistance caused by the above structure is extremely low, especially compared to other detection systems such as crane probes. See Figure 14 for contact resistance on unmorphized aluminum. Page 19 1284738 Case No. 93114360 V. Description of invention (14) Force, after 5000 contact cycles, less than 30 ηηΩ, far less than conventional tungsten probes :::Α=3〇ΠΐΩ) is low. Referring to Figure 15, the probe remains in contact with the imprint, and the contact resistance is expressed as a function of time. For example, when V is known: I 矣 tungsten nucleus shows a large change in the same period, typically ranging from m Ω to 75 m Ω. Another consideration for the 碉 碉 resistance group 35 cable is the characteristics of different transmission structures. Coaxial axis Coaxial power transfer characteristics. Within the diaphragm structure, the connection to the constructor has excellent high frequency characteristics. Connected to the diaphragm junction for a coplanar transfer wheel 'such as a single contact or - to the ground touch ‘point. The contact is too strong. To achieve achievable, the bandwidth capability is 150 microns longer than the coaxial power and the microstrip structure. Further, the inventors have determined that the contact should not exceed 10 〇 micron, and the κ contact should not exceed (for example, a high sound 5 from a flat surface, no more than 75 micrometers, or no more than 55 micrometers.

1284738 _案號 93114360 圖式簡單說明 年 月 曰 修正 第1圖表示現有探針； 第2A-2C圖表示另一現有探針； 第3圖為本發明探針之一具體例； 第4圖為第3圖探針之部份側視圖； 第5圖為第3圖探針之部份仰視圖； 第6圖為本發明探針另一具體例； 第7圖為本發明探針又一具體例； 第8圖為本發明探針再一具體例； 第9圖為力量對照直立探針變形之曲線圖；1284738 _Case No. 93314360 Schematic description of the year and month correction Figure 1 shows the existing probe; Figure 2A-2C shows another existing probe; Figure 3 shows a specific example of the probe of the present invention; Fig. 3 is a partial side view of the probe; Fig. 5 is a partial bottom view of the probe of Fig. 3; Fig. 6 is another specific example of the probe of the present invention; Example 8 is another specific example of the probe of the present invention; FIG. 9 is a graph showing the deformation of the power upright probe;

第1 0圖表示探針預載； 第11圖為探針預載情況時力量對照直立探針變形之曲 線圖； 第1 2圖表示探針觸點； 第13圖表示修飾探針觸點； 第1 4圖表示觸點阻力； 第1 5圖表示觸點阻力。Figure 10 shows the probe preload; Figure 11 is the curve of the force versus the upright probe deformation when the probe is preloaded; Figure 12 shows the probe contact; Figure 13 shows the modified probe contact; Figure 14 shows the contact resistance; Figure 15 shows the contact resistance.

第21頁 1284738 年月曰 修正 _案號 93114360 圖式簡單說明 元件 符號說 明 40 共 軸 電 纜 41 内 導 體 42 介 質 材 料 43 外 導 體 80, 438,454 探針尖 85 架 88 介 質 基 片 90 導 電 性 屏 蔽 92 導 電 性 痕 跡 94 導 電 性 蝕 刻溝 100 導 電 性 顛 簸 102 觸 點 110 上 屏 蔽 112 導 電 性 指 桿 114 地面指桿 40 0 低剛性探針 402 高剛性探針 404，406 直立線 408,41 0 水平線 420, 42 2 可接受探測範圍 440 弦線 444 形態 448 上方彎曲部 450, 45 2 傾斜表面 460 探針唇部 462 探針背側 464 探針基部Page 21 1284738 曰 曰 Revision _ Case No. 93114360 Schematic description of the component symbol description 40 Coaxial cable 41 Inner conductor 42 Media material 43 Outer conductor 80, 438, 454 Probe tip 85 Frame 88 Media substrate 90 Conductive shield 92 Conductive Sex marks 94 Conductive etched trenches 100 Conductive bumps 102 Contacts 110 Upper shields 112 Conductive fingers 114 Ground fingers 40 0 Low rigidity probes 402 Highly rigid probes 404, 406 Upright lines 408, 41 0 Horizontal lines 420, 42 2 Acceptable detection range 440 String 444 Form 448 Upper bend 450, 45 2 Tilted surface 460 Probe lip 462 Probe back side 464 Probe base

第22頁Page 22

Claims (1)

12847381284738 1 · 一種探針，包括·· (a )介質基片； ()導電性訊號痕跡，適於與該基片上表面該所支 持測試訊號電氣相連接； (c)導電性屏蔽，適於與該基片下表面所支持地面 訊號電氣相連接，其中該導電性屏蔽係在該導 電性訊7虎痕跡全長大部份下方； (d )導電性蝕刻溝，介於該基片的該上表面和該基 片的该下表面之間，該導電性餘刻溝與該導電 性屏蔽無電氣相連接； (e) 觸點，與該導電性蝕刻溝電氣相連接，以供測 試待測元件；而 (f) 其中該基片厚度低於40微米，介質常數在7以 者。 2·如申請專利範圍第！項之探針，其中介於該上表面 和該下表面間之該導電性蝕刻溝，對於該基片厚度至少一 部份而言，於導電性蝕刻溝和該基片末端之間無空氣間隙 着0 ’、 3. 如申請專利範圍第1項之探針，其中該導電性訊號1) A probe comprising: (a) a dielectric substrate; () a conductive signal trace adapted to be electrically connected to the supported test signal on the upper surface of the substrate; (c) a conductive shield adapted to The ground signal supported by the lower surface of the substrate is electrically connected, wherein the conductive shield is below the full length of the trace of the conductive trace; (d) a conductive etching trench on the upper surface of the substrate and Between the lower surface of the substrate, the conductive residual groove is electrically connected to the conductive shield; (e) a contact electrically connected to the conductive etching trench for testing the device under test; (f) wherein the substrate has a thickness of less than 40 μm and a dielectric constant of 7 or less. 2. If you apply for a patent range! The probe of the item, wherein the conductive etching trench between the upper surface and the lower surface has no air gap between the conductive etching trench and the end of the substrate for at least a portion of the thickness of the substrate 0 ', 3. as in the probe of claim 1 of the scope of the patent, wherein the conductivity signal 痕跡與共軸電繞之中央導體電氣相連接者。 U 4. 如申請專利範圍第3項之探針，其中該導體構件盘 該共軸電纜的該中央導體周圍之導體接電者。 〃 5 ·如申請專利範圍第4項之探針 該共轴電、纜支持者。 ’其中該基片係利用The trace is electrically connected to the central conductor of the coaxial winding. U. The probe of claim 3, wherein the conductor member is a conductor of the conductor around the central conductor of the coaxial cable. 〃 5 · Probe for the fourth paragraph of the patent application. This coaxial electric and cable supporter. Where the substrate is utilized 1284738 _案號93114360_年月曰 修正_ 六、申請專利範圍 6. 如申請專利範圍第5項之探針，其中該基片係利用 該共軸電纜之架支持者。 7. 如申請專利範圍第1項之探針，其中該導電性材料 實質上平坦者。 8. 如申請專利範圍第1項之探針，其中該介質基片係 半屈曲性者。 9. 如申請專利範圍第8項之探針，其中該介質基片係 隔膜者。 1 0.如申請專利範圍第1項之探針，其中該介質基片之 介質常數低於5者。 11.如申請專利範圍第1項之探針，其中該介質基片之 介質常數低於4者。 1 2.如申請專利範圍第1項之探針，其中該介質基片之 介質常數低於2者。 1 3.如申請專利範圍第1項之探針，其中該地面訊號 為零伏特者。 1 4.如申請專利範圍第1項之探針，其中該導電性屏蔽 覆蓋該基片之該下表面超過50 %者。 1 5.如申請專利範圍第1項之探針，其中該導電性屏蔽 覆蓋該基片之該下表面超過60 %者。 1 6.如申請專利範圍第1項之探針，其中該導電性屏蔽 覆蓋該基片之該下表面超過70 %者。 1 7.如申請專利範圍第1項之探針，其中該導電性屏蔽 覆蓋該基片之該下表面超過80 %者。1284738 _ Case No. 93114360_年月曰 Amendment _ VI. Application for Patent Scope 6. For the probe of claim 5, wherein the substrate utilizes the supporter of the coaxial cable. 7. The probe of claim 1, wherein the electrically conductive material is substantially flat. 8. The probe of claim 1, wherein the dielectric substrate is semi-flexible. 9. The probe of claim 8 wherein the dielectric substrate is a separator. 10. The probe of claim 1, wherein the dielectric substrate has a dielectric constant of less than 5. 11. The probe of claim 1, wherein the dielectric substrate has a dielectric constant of less than four. 1 2. The probe of claim 1, wherein the dielectric substrate has a dielectric constant of less than two. 1 3. The probe of claim 1 of the patent scope, wherein the ground signal is zero volts. 1 4. The probe of claim 1, wherein the conductive shield covers more than 50% of the lower surface of the substrate. The probe of claim 1, wherein the conductive shield covers more than 60% of the lower surface of the substrate. The probe of claim 1, wherein the conductive shield covers more than 70% of the lower surface of the substrate. The probe of claim 1, wherein the conductive shield covers more than 80% of the lower surface of the substrate. 第24頁 1284738 修正 ----—案號 93114360 车 η 1 8 ·如申請專利範圍第1項之探直 蓋该基片之該下表面超過9〇 %者。’、以“性屏蔽 19·如申請專利範圍第1項之探 、該導電性訊號痕跡和該基 ，、中“導電性屏蔽 者。 帛體形成微條傳輪結構 2 0 ·如申請專利範圍第1項之 溝係貫穿該基片之蝕刻溝者。 、，/、中該導電性蝕刻 2 1 ·如申請專利範圍第1項之擬牡 ^ 在側面包圍該觸點至少5 〇 %者。、十，其中該導電性屏蔽 22 ·如申請專利範圍第1項之捏杜 在侧面包圍該觸點至少%者。針，其中該導電性屏蔽 23·如申請專利範圍第丨項之 在側面包圍該觸點至少1〇〇%者。衣針，其中該導電性屏蔽 24·如申請專利範圍第i項之 形式者。 保針，其中該觸點呈顛簸 2 5 ·如申請專利範圍第1項 性指桿形式者。 、探針，其中該觸點呈導電 2 6 ·如申請專利範圍第1 於30 %微米者。 、板針，其中該基片厚度低 27·如申請專利範圍第丨項之 於20 %微米者。 ％針’其中該基片厚度低 28· —種探針，包括： (a)介質基片，在基片上矣 ’由該基片之下表持導電性訊= 炎持導電性屏蔽，其中4Page 24 1284738 Amendment ----—Case No. 93114360 Car η 1 8 · If the application of the first paragraph of the patent scope covers more than 9〇% of the lower surface of the substrate. </ br /> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; The corpus callosum forms a micro-strip structure 2 0 · The groove of the first item of the patent application is through the etching groove of the substrate. , /, in the conductive etching 2 1 · As in the patent scope of the first item of the immortal ^ ^ side of the contact at least 5 〇 %. And ten, wherein the conductive shield 22 is as claimed in claim 1 of the first aspect of the present invention. A needle, wherein the conductive shield 23 is at least 1% of the side of the contact as disclosed in the scope of the patent application. A needle, wherein the conductive shield is as in the form of item i of the patent application. Needle protection, in which the contact is bumpy 2 5 · As in the scope of patent application, the first finger type. , the probe, wherein the contact is electrically conductive 2 6 · as claimed in the first range of 30% micron. The plate needle, wherein the substrate has a low thickness of 27%, as in the 20th micrometer of the patent application. % needle 'where the thickness of the substrate is low 28', a type of probe comprising: (a) a dielectric substrate on the substrate 矣' by the substrate underneath the conductive signal = inflammatory conductive shield, 4 第25頁 1284738 曰 修正 案號931U沾η 六、申請專利範圍 訊號痕全長之大部份 導電性屏蔽係在該導電性 下方； (b)導電性蝕刻溝，介 μ λα ^ 再，丨於該基片的該上表面和該基 片的該下表面之間； (C )觸點 5 與該導^ f AJL -t) 導電陳触刻溝電氣相接，供測試待 測疋件；而 (d)其中該基片厚度低於4〇微米，介質常數在7以 下者。 、 29·如申請專利範圍第28項之探針，其中該導電性蝕 刻溝H ί i厚度之至少大部份而t，係在該基片周緣 以内之區域内者。 30·如申請專利範圍第28項之探針，直 性訊 號痕跡係與共軸電纜之中央導體電氣相連接者^ 31·如申請專利範圍第30項之探針，直。性屏 蔽係與該共軸電纜之該中央導體接電者。八 ^ 32.如申請專利範圍第28項之探針，中該介質基片 具屈曲性者。 a ^ '33.如申請專利範圍第32項之探針，其中該介質基片 係隔膳者。 人 34. 如申請專利範圍第28項之探針，苴 質基片 之介質常數低於5者。 r ,ι ；ι 35. 如申請專利範圍第28項之探針，豆 基片 之介質常數低於4者。 /、T碴7丨、 36 ·如申請專利範圍第2 8項之探 辦A Μ 狄針，其中該介質基乃Page 25 1284738 曰Amendment No. 931U ηη VI. Patent Application Scope Most of the conductive shielding of the signal mark is below the conductivity; (b) Conductive etching groove, μ μλ ^ ^ Between the upper surface of the substrate and the lower surface of the substrate; (C) the contact 5 is electrically connected to the conductive contact groove of the substrate for testing the component to be tested; d) wherein the substrate has a thickness of less than 4 Å and a dielectric constant of 7 or less. 29. The probe of claim 28, wherein at least a majority of the thickness of the conductive etched groove H ί i is within a region within the periphery of the substrate. 30. If the probe of claim 28 is applied, the trace of the direct signal is electrically connected to the central conductor of the coaxial cable. 31. As the probe of claim 30, straight. The shield is connected to the central conductor of the coaxial cable. VIII. 32. The probe of claim 28, wherein the dielectric substrate has a buckling property. a ^ '33. The probe of claim 32, wherein the media substrate is a spacer. Person 34. For the probe of claim 28, the dielectric constant of the enamel substrate is less than 5. r , ι ; ι 35. As for the probe of claim 28, the medium constant of the bean substrate is less than 4. /, T碴7丨, 36 · As for the application of the scope of the 28th item, A Μ Di needle, where the medium is 12847381284738 之介質常數低於2者。 ^ 37 ·如申請專利範圍第2 8項之探針， 蔽覆蓋該基片之該下表面超過者。 —38 ·如申請專利範圍第2 8項之探針， 蔽覆蓋該基片之該下表面超過6〇%者。 + =·如申請專利範圍第28項之探針， 蔽覆蓋該基片之該下表面超過70%者。 ^ t0·如申請專利範圍第28項之探針， 蔽覆蓋該基片之該下表面超過80 %者。 ^ ·如申請專利範圍第2 8項之探針， 蔽覆蓋該基片之該下表面超過9 0%者。 其中該導電性屏 其中該導電性屏 其中該導電性屏 其中該導電性屏 其中該導電性屏The dielectric constant is less than two. ^ 37 · The probe of claim 28, covering the lower surface of the substrate. - 38 - If the probe of claim 28 of the patent application covers more than 6 % of the lower surface of the substrate. + = · As in the probe of claim 28, the cover covers more than 70% of the lower surface of the substrate. ^ t0 · The probe of claim 28 of the patent application covers more than 80% of the lower surface of the substrate. ^ If the probe of claim 28 of the patent application covers more than 90% of the lower surface of the substrate. Wherein the conductive screen, wherein the conductive screen, wherein the conductive screen, the conductive screen, wherein the conductive screen 蔽 者 4 2 ·如申請專利範圍第2 8項 該導電性訊號痕跡和該基片 集 形成微條傳輸 其中該基片厚度 4 3 ·如申請專利範圍第2 8項之探針， 在3 0微米以下者。 44 ·如申請專利範圍第2 8項之探 在20微米以下者。 ，、中該基片厚度 4 5 · —種探針，包括：The mask 4 2 · The conductive signal trace of the 28th item of the patent application and the substrate set forming the micro strip transmission wherein the substrate thickness is 4 3 · The probe of the 28th item of the patent application, at 30 Below the micron. 44 · If you are applying for the scope of patent application No. 28, the following is less than 20 microns. , the thickness of the substrate 4 5 · a kind of probe, including: (a) 介質基片，在該基片上表面 跡，且由該基片的該下表面拄電性訊號痕 (b) 導電性蝕刻溝，介於該基*電性屏蔽； 片的該下表面之間； 表面和該基 (c)觸點，與該導電性蝕刻溝電氣連接(a) a dielectric substrate on which a surface trace is formed, and the lower surface of the substrate is electrically etched with a signal mark (b) conductively etched, between the base* electrical shield; the lower surface of the sheet Between the surface and the base (c) contact, electrically connected to the conductive etch trench 供測試待For testing 第27頁 1284738 案號 93114360 λ_a. 曰 修正 六、申請專利範圍 測元件；以及 (d)共軸電纜，與該介質基片相接，其中當該觸點 不與該待測元件結合時，該共軸電纜即維持張 力狀態者。 4 6.如申請專利範圍第45項之探針，其中該基片厚度 低於40微米，介質常數在7以下者。 47. 如申請專利範圍第4 5項之探針，其中該導電性蝕 刻溝對該基片厚度至少大部份而言，係在該基片周緣以内 之區内者。 48. 如申請專利範圍第4 5項之探針，其中該導電性訊 號痕跡與共軸電纜的中央導體電氣相連接者。 49. 如申請專利範圍第4 5項之探針，其中該導電性屏 蔽係與該共軸電纜的該中央導體之周圍導體接電者。 5 0 . —種探針，包括： (a )介質基片’支持導電性訊號痕跡； (b )探測元件’與該導電性訊號痕跡電氣相接’供 測試待測元件；以及 (c)共軸電纜，與該介質基片相接，其中當該觸點 不與該待測元件結合時，該共軸電纜即維持張 力狀態者。 5 1.如申請專利範圍第5 0項之探針，其中當該探測元 件與該待測元件間施以充分壓力時，即可鬆弛該張力狀態 者。 52.如申請專利範圍第5 0項之探針，其中該基片厚度Page 27 1284738 Case No. 93114360 λ_a. 曰 Amendment VI, application for patent range measuring component; and (d) coaxial cable, which is connected to the dielectric substrate, wherein when the contact is not combined with the component to be tested, The coaxial cable is the one that maintains the tension state. 4 6. The probe of claim 45, wherein the substrate has a thickness of less than 40 μm and a dielectric constant of 7 or less. 47. The probe of claim 45, wherein the conductive etched trench is at least a majority of the thickness of the substrate within the perimeter of the substrate. 48. The probe of claim 45, wherein the conductive signal trace is electrically connected to a central conductor of the coaxial cable. 49. The probe of claim 45, wherein the conductive shield is coupled to a surrounding conductor of the central conductor of the coaxial cable. 50. A type of probe comprising: (a) a dielectric substrate 'supporting a conductive signal trace; (b) a detecting element 'electrically connected to the conductive signal trace' for testing the component to be tested; and (c) A shaft cable is connected to the dielectric substrate, wherein the coaxial cable maintains a tension state when the contact is not combined with the component to be tested. 5 1. The probe of claim 50, wherein the tension state is relaxed when sufficient pressure is applied between the detecting element and the element to be tested. 52. The probe of claim 50, wherein the thickness of the substrate 第28頁 1284738Page 28 1284738 53 ·如申請專利範圍第5 0項之探針，甘 號痕跡與該共軸電纜的中央導體電氣相^ ^亥導電性α 54· —種探針，包括： 運接者。 案號 93114360 六、申請專利範圍 低於40微米，介質常數在7以下者。 (a)介質基片，在該基片上表 轨，士分盆u φ衣面支持導電性訊號痕 ⑴：2 面支持導電性屏蔽. 片的該下表面之間；片的該上表面和該基 (c) 觸點，與該導電性蝕刻溝電氣相連接， 待測元件；而 A、剩試 (d) 其中該觸點相對於該介質基片相鄰表 在150微米以下者。 的向度 55·如申請專利範圍第54項之探針， 坦者。 八中该基片係平 56·如申請專利範圍第54項之探針，其中該 於該介質基片相鄰表面的高度在丨00微米以下者。〜相對 57. 如申請專利範圍第54項之探針，其中該觸點 於該介質基片相鄰表面的高度在75微米以下者。 對 58. 如申請專利範圍第54項之探針，其中該觸點 於該介質基片相鄰表面的高度在55微米以下者。 于 59. 如申請專利範圍第54項之探針，又包括共軸 緵，與該介質基片相連接’其中當該觸點不與待剛元 合時，該共轴電纜即維持張力狀態者。 、 牛結 60·如申請專利範圍第54項之探針，其中該基片厚度53. If the probe of claim 50 is applied, the trace of the gantry is electrically connected to the central conductor of the coaxial cable. The probe includes: Case No. 93114360 VI. The scope of application for patents is less than 40 microns, and the dielectric constant is below 7. (a) a dielectric substrate on which the track is placed on the substrate, and the conductive surface of the spacer is supported by a conductive signal mark (1): the two sides support the conductive shield. The lower surface of the sheet; the upper surface of the sheet and the a base (c) contact electrically connected to the conductive etch trench, the component to be tested; and A, a residual test (d) wherein the contact is less than 150 microns adjacent to the dielectric substrate. The direction of the 55. As the probe of the 54th section of the patent application, it is reasonable. The substrate of the eighth embodiment is a probe according to claim 54 of the patent application, wherein the height of the adjacent surface of the dielectric substrate is less than 丨00 μm. - rel. 57. The probe of claim 54, wherein the contact is at a height below 75 microns on the adjacent surface of the dielectric substrate. 58. The probe of claim 54, wherein the contact is at a height of 55 microns or less on an adjacent surface of the dielectric substrate. 59. The probe of claim 54 further comprising a coaxial 緵 connected to the dielectric substrate ′ wherein the coaxial cable maintains the tension state when the contact is not combined with the rigid element . , bovine knot 60. The probe of claim 54 of the patent scope, wherein the thickness of the substrate 第29頁 1284738 _案號93114360_年月日 修正 六、申請專利範圍 低於4 0微米，介質常數在7以下者。Page 29 1284738 _ Case No. 93114360_年月日日 Amendment VI. The scope of application for patents is less than 40 microns and the dielectric constant is below 7. 1醒_匯 第30頁 1284738 -直典93114360----年月 日 修Π： 四、中文發明摘要（發明名稱^ 一種探針測量系統，可以 微電子元件之電氣特性。該探 上表面具有一導電性訊號痕跡 面所支持。一導電性蝕刻溝將 表面。 高頻率測量積體電路或其他 針包括一介質基片，在基片 。一導電性屏蔽為基片下表 導體連接基片之上表面至下 (一） (二） 、本案代表圖為 、本案代表圖之 :第3圖。 元件代表符號簡單說明 40 共軸電纜 41 内導體 42 介質材料 43 外導體 80 探針尖 85 架 88 介質基片 92 訊號痕跡1 wake up _ 30th page 1284738 - straight code 93114360----year and month repair: Fourth, the Chinese invention summary (invention name ^ a probe measurement system, can be the electrical characteristics of microelectronic components. The probe surface has A conductive signal trace surface is supported. A conductive etch trench will surface. The high frequency measurement integrated circuit or other pins include a dielectric substrate on the substrate. A conductive shield is the substrate under the conductor connection substrate The upper surface to the bottom (1) (2), the representative figure of the case is the representative figure of the case: Figure 3. The simple representation of the component symbol 40 Coaxial cable 41 Inner conductor 42 Media material 43 Outer conductor 80 Probe tip 85 Frame 88 Media substrate 92 signal trace 六、英文發明摘要（發明名稱：PROBE FOR TESTING A DEVICE UNDER TEST)Sixth, English invention summary (invention name: PROBE FOR TESTING A DEVICE UNDER TEST) A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies. The probe includes a dielectric substrate with a conductive signal traces on a top side of the substrate. A conductive shield is supported on a bottom side of the substrate. A conductive via interconnects the conductor on theA probe shield system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies. The probe includes a dielectric substrate with a conductive signal traces on a top side of the substrate. A conductive shield is supported on a bottom side of the A conductive via interconnects the conductor on the 第4頁Page 4