1278252 日期：2005年9月26日 且特別有關於一種有機電激 第94110729 1審利説明書修正本 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種顯示元件 發光顯示元件。 【先前技術】 —&者科技的日新月異’有機材料也逐漸廣泛地運用在各式電 路元件中’例如-種利用有機材料製作的有機電激發光顯示 ^organic electroluminescent ά±3ρΐπ，^Εΐ))面板便以 間早的架構和極佳的卫作温度、對比、㈣以及具備有發光二極 逐漸在顯示器市場中受到矚目。 在有機電激發光顯示面板中，主要都是藉由其上能以電流驅 動而進行主動發光的有機發光元件來進行影像顯示，料考第1 圖，第！圖為一習知有機發光顯示面板1〇之剖面示意圖'如第1 圖所示’有機發光顯示面板1Q包含有_基板12以及複數個有機 發光元件20設於基板12 ±。而每—個有機發光元件2。皆包含 有-下電極14、一有機發光單元16以及一上電極以依序堆疊= 基板12上。 其中有機發光單元16係為一多層堆疊構造，至少包含有一電 洞注入層（h〇le injecting layer)22、 一有機發光層 (organic eiectroluminescent layer)24&及一電子注二 層（electron in；jection layer)26依序堆疊於下電極η上。 當施加電壓下，有機發光元件2〇中的上電極18與下電極14 0632-A50370-TWf 5 1278252 — 苐9411耵29 1審利説明書修正末 將分別產生電子與電洞，诉娘 日期- 2005年9月26日 、 、〜二由電子庄入層26與電洞注入層22 有機發光層24處結合形成激子去激發發光物質 然而這樣的傳統元件結構錢在操賴率與元件壽命上均存 ㈣限制’而造成有機發光顯示㈣_品質不能轉提昇。因 二一1善有機發光顯示器之組成構造，以進—步提昇有機發 先，·、、員不益的顯示品質實為當前之重要研究方向。 【發明内容】 ㈤本么明的目的之一就是提供一種具有複數個有機發光單元轉 豐的有機發光元件，以進—步提昇有機發光顯示器的顯示品質。 為達上述與其他目的，在本發明之一實施例中提供了一有機 抢，光,47F7L件’其包含有—τ電極、至少二有機發光單元， 堆登於下電極上、至少—電荷生成層（心阶卿⑽七土⑽ 叫設置於兩相鄰之有機發光單元之間，以及一上電極，設於 該些有機發光單元上’纟中電荷生成層包含有富勒烯 (fullerene)或其衍生物，並具有傳遞電子與電洞的能力。 為讓本各明之上述和其他目的、特徵、和優點能更明顯易懂， 下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 請參考第2圖，第2圖為本發明第—實施射—有機發光元 件110之剖面示意圖。如第2圖所示，有機發光元件包含有 -下電極112、二有機發光單元1163與116b堆疊於下電極山 上、一電射成層（charge_generatiGn layer)ii8 設置於兩 0632-A50370-TWf 6 12職 94110729號春利説明書修正本 日期：2005年9月26日 相鄰之有機發光單元116之間，以及一上電極114，設於此二有 機發光單元116上。此外，在本發明之一實施例中，有機發光元 件110更包含有一緩衝層120設於電荷生成層118與其下方之有 機發光單元116之間。而下電極112與上電極114則分別電連接 至一電壓源，當施加電壓於下電極112與上電極114上時，各有 機發光單元116將會同時發光，以進行影像顯示。 請參考第3圖，第3圖為第2圖中有機發光單元116之剖面 示意圖。如第3圖所示，有機發光單元116包含有一電洞注入層 122、一電洞傳輸層124、一有機發光層126、一電子傳輸層128 φ 以及一電子注入層132依序堆疊於下電極112上。在本發明之一 實施例中，電洞注入層122係摻雜有重量濃度0·1%至50%之p 型摻雜物，例如TF-TCNQ、氣化鐵（FeCl3)或上述材料之組合， 而電子注入層132係摻雜有重量濃度1%至99%之η型摻雜物，例 如金屬鹵化物，以協助電子或電洞的傳輸。 由於本發明中係藉由複數個相互堆疊的有機發光單元116， 以串聯的方式同時發光，因此，設於各有機發光單元116之間的 電荷生成層118就以具有產生或傳輸電子/電洞能力者較佳，在 I本發明之一實施例中，所使用的電荷生成層118之最低未填滿分 子軌域（LUMO)係介於上方電洞注入層122之最高填滿分子軌域 (HOMO)與下方電子注入層132之最低未填滿分子軌域之間，以使 電子與電洞能順利傳輸於各有機發光單元116之間。此外，為了 避免在製作過程中傷害到鄰近有機發光單元116中的有機材料， 因此電荷生成層118係以可用熱蒸鍍方式來製作之有機材料較 佳。 為滿足上述條件，在本發明之一實施例中，電荷生成層118 包含有富勒:if (fullerene)或其衍生物，士口 C60、C7 0、C90等， 0632-A50370-TWf 7 -127!?土=_， ⑽·9_ 在本發明之另-貫施例中電荷生成層118則包含有寡料化合物 (oligofluorenes)、三苟化合物（terflu〇rene)、三9一 .雙芳香基苟）化合物 uer(9,9_diaryfluorene)s)、9,9_雙芳 香基苟寡聚化合物（〇ligc)(9,9_diaryfluGr_)s)或其衍生 物’且電荷生成層118之厚度大抵為Q.i奈米至_奈米。 所要再次強制是’雖然在上述實補巾僅以二個相互堆疊 有機發光單元116為例，來制本發明之有機發光元件HO二 ^然而事實上有機發光元件11Q可包含有多個相互堆疊有機發 先早疋⑴，且各相鄰之有機發光單元116間均設有—電荷生成 層118，以協助電子/電洞的產生或傳輸。 承上所述，若有機發光元件11Q中的電荷生成層U8與其下 方之有機&光單元116之間具有—額外的緩衝層Μ。，基於同樣 的理由’緩衝層120之材料選擇同樣以功函數介於電荷生成層 118與，子注人層132的最低未填滿分子軌域之間者較佳，以進 籲:步提高電子注入之效果。在本發明之一實施例中，緩衝層12〇 係包含有銘、銀、鎳、鈦、辑、鎮、麵、组或上述材料之組合。 此外，有機發光元件110中的各個有機發光單元叫亦可視 := 反！需求，而使用相同之有機發光單元116，或者採用數 =同的有機發光單元116來進行組合，舉例來說，有機發光元 中的各有機發光單元116可具有相同發光顏色，或者至少 色。機發先早70 116與其他有機發光單元116具有不同的發光顏 有機=-Γ 之有機發光元件iiq可以是上發光 ::=!、下發光有機發光元件或雙面發光有機發光元件， 色二有μ光元件發出之光可以是紅色、綠色、藍色或白色之光 0632-A50370-TWf 8 I27§252 -T9賴説明書修正末 日期·年9月26日 為進-步說明本發明’以下特列舉數實施例，並以習知有機 發光7G件作為比較例，同時進行測試，以闡明本發明之優越性。 在本發明之第—實施射，首先利用紫外線與臭氧對作為陽 極的氧化銦錫（ITQ)進行處理，然後再於其上依序舰厚度約為 6〇奈米的有機芳香胺衍生物或其組合作為電洞注入層（hil)、厚 度約為20奈米的謂作為電洞傳輪層（htl)、厚度約為6〇夺米 綠色發光層㈣L)、厚度約為1Q奈米的電子傳輸層（etl)以及 厚，、力為20奈米之A1g(摻雜有重量濃度約為备η型掺質，例 如氟化錄卜以構成-第一發光元件，接著再蒸鑛厚度約為2奈求 的㈣為緩衝層以及厚度約為5奈米的碳6〇(c6〇)作為電荷生成 層’隨後再於電荷生成層上蒸鐘厚度約為6〇奈米的卿作為電 洞注入層，並於其中摻入重量濃度約為2%的p型摻質，如 = TCNQ ’接著再於其上依序形成厚度約為2。奈米之刪作為 ^同，輸層、厚度約為6Q奈米之綠色發光層以及厚度約為夺 二=:輸層，而構成一第二發光元件，最後再於其上形成厚 =為U的氟化鐘（LiF)及厚度約為⑽奈 作為陰極之用。 人 在本發明之第二實施例中，首先利用紫外 極的氧化銦錫UT⑴推广忐六孔訂1卞局險 丁处里，然後再於其上依序蒸鍍厚度約為 機芳㈣衍生物或其組合作為電敝人層（hil)、厚 二米的则作為電洞傳輸層(HTL)、厚度約為6。奈米 1〇 —不米之MM摻雜有重量濃度約為 2 〇 % η型摻質，例 的:作—第m件，接著再蒸錢厚度約為2奈米 層的碳6咖）作為電荷生成 ^ ϋ鍍厚度約為60奈米的有機芳香胺衍 〇632-A50370-TWf 9 1278252 隸正末 日_5年9月26曰 I 3二、、且。作為電洞注入層，並於其中摻入重量濃度約為2%的 P, 31杉貝如F4一TCNQ，接著再於其上依序形成厚度約為2〇奈 米之NPB作為電洞傳輸層、厚度约a ^◦奈米之綠色發光層以及 厚度約為20奈米之電子傳輸層，而構成一第二發光元件，最後再 於其上形成厚度約為1奈米的氟化鋰（LiF)及厚度約為100奈米 的鋁（A1)，以作為陰極之用。 在本料之帛三實施射，首先湘紫外線與臭氧對作為陽 極的氧化銦錫（ITQ)進行處理，然後再於其上依序蒸鍍厚度約為 不米的有機芳香胺衍生物或其組合作為電洞注入層（H工L)、厚 度約為20奈米的刪作為電洞傳輸層（htl)、厚度約為⑼奈米 ，綠色發光層（EML)、厚度約為1Q奈米的電子傳輸層（e叫以及 厚度約為20奈米之Alg(摻雜有重量濃度約為2〇%n型摻質，例 如氟㈣），以構成-第_發光元件，接著再⑽厚度約為2奈米 的紹作為緩衝層，隨後再於緩衝層上錢厚度約為⑼奈㈣NPB 乍為電洞注入層’並於其中摻入重量漠度約為2%的^型捧質，如 Η一TCNQ，接著再於其上依序形成厚度約為2〇奈求之咖作為 電网傳輸層、厚度約為60奈米之綠色發光層以及厚度約為⑼奈 米之電子傳輸層，而構成-第二發光元件，最後再於其上形成厚 度約為1奈米的貌化鐘（LiF)及厚度約為100奈米的紹（ai)，以 作為陰極之用。 在本發明之第四實施例中，首料用紫外線與臭氧對作為陽 極的氧化銦錫⑽）進行處理，然後再於其上依序蒸鍍厚度約為 6〇奈未的有機芳香胺衍生物或其組合作為電洞注人層（hil)、厚 度約為2Q奈米的鹏作為電洞傳輸層（htl)、厚度約為6〇奈米 ^綠色發光層(EML)、厚度約為1〇奈米的電子傳輸層(祖)以及 旱度約為20奈米之Alq (摻雜有重量濃度約為2心型摻質，例 °632-A5〇37〇-TWf 10 .12戦9 1妻利説明書修正本 如氟化鉋），以構成一第—於 日期：2〇05年9月26日 的紹作為緩衝層，隨後再於緩2件’接者再蒸鑛厚度約為2奈米 •芳隸衍生物或其組合作;層上蒸财度約為⑼奈㈣有機 -Μ 21聽· ^層，並於其中摻人重量濃度 約為2^的ρ型摻質，如 幼焱％太水々vrn A NQ ’接著再於其上依序形成厚度 、、、勺為2 0不未之NPB作為電洞僖〆 .S ^ , 〇 口傳輪層、厚度約為6.0奈米之綠色發 件、：二I。奈米之電子傳輪層，而構成-第二發光元 tri 厚度約為1奈来—）及厚度約 為100奈米的紹（A1)，以作為陰極之用。1278252 Date: September 26, 2005 and particularly related to an organic electric shock. Amendment No. 94110729 1 Amendment of the specification. 9. Description of the Invention: Field of the Invention The present invention relates to a display element light-emitting display element. [Prior Art] - The ever-changing technology of '& technology' is also widely used in various circuit components. 'For example, an organic electroluminescence display made of organic materials ^organic electroluminescent ά±3ρΐπ, ^Εΐ)) The panel has gradually attracted attention in the display market with an early architecture and excellent temperature, contrast, (4) and LEDs. In the organic electroluminescence display panel, the image display is mainly performed by an organic light-emitting element on which an active light can be driven by current, and the first picture is shown! The figure is a schematic cross-sectional view of a conventional organic light-emitting display panel 1' as shown in Fig. 1. The organic light-emitting display panel 1Q includes a substrate 12 and a plurality of organic light-emitting elements 20 are provided on the substrate 12±. And each of the organic light-emitting elements 2. Each includes a lower electrode 14, an organic light emitting unit 16, and an upper electrode for sequential stacking on the substrate 12. The organic light-emitting unit 16 is a multi-layer stack structure comprising at least one hole injecting layer 22, an organic eiectroluminescent layer 24 & and an electron injecting layer (electron in; The jection layer 26 is sequentially stacked on the lower electrode η. When a voltage is applied, the upper electrode 18 and the lower electrode 14 of the organic light-emitting element 2 are respectively 0 0632-A50370-TWf 5 1278252 - 苐 9411耵29 1 The revised specification will generate electrons and holes respectively, and the date of the complaint is - On September 26th, 2005, the second layer is combined with the electron injection layer 26 and the hole injection layer 22 to form an exciton to excite the luminescent material. However, the traditional component structure is in terms of the frequency of operation and the life of the component. The average (4) limit 'causes the organic light display (4) _ quality can not be improved. Because of the composition of the organic light-emitting display of the 21st, it is the current important research direction to improve the organic quality first and foremost. SUMMARY OF THE INVENTION (V) One of the purposes of the present invention is to provide an organic light-emitting element having a plurality of organic light-emitting unit conversions to further improve the display quality of the organic light-emitting display. To achieve the above and other objects, in an embodiment of the present invention, an organic grab, light, 47F7L member is provided which includes a -τ electrode, at least two organic light-emitting units, and is stacked on the lower electrode, at least - charge generation a layer (heart) (10) seven soils (10) is called between two adjacent organic light-emitting units, and an upper electrode is disposed on the organic light-emitting units. The charge-generating layer in the crucible contains fullerene or The above-described and other objects, features, and advantages of the present invention will become more apparent and obvious. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [Embodiment] Please refer to FIG. 2, which is a cross-sectional view of a first embodiment of the present invention. The organic light-emitting device includes a lower-electrode 112 as shown in FIG. The two organic light-emitting units 1163 and 116b are stacked on the lower electrode mountain, and an electric radiation layer (charge_generatiGn layer) ii8 is set on the two 0632-A50370-TWf 6 12th 94110729. The spring specification is revised. Date: September 26, 2005 The adjacent organic light emitting unit 116 and the upper electrode 114 are disposed on the two organic light emitting units 116. In addition, in an embodiment of the invention, the organic light emitting device 110 further includes a buffer layer 120 disposed on the charge. The lower layer 112 and the upper electrode 114 are electrically connected to a voltage source respectively, and when a voltage is applied to the lower electrode 112 and the upper electrode 114, each of the organic light emitting units 116 will The image is displayed at the same time for image display. Please refer to FIG. 3, which is a schematic cross-sectional view of the organic light emitting unit 116 in FIG. 2. As shown in FIG. 3, the organic light emitting unit 116 includes a hole injection layer 122, A hole transport layer 124, an organic light-emitting layer 126, an electron transport layer 128 φ, and an electron injection layer 132 are sequentially stacked on the lower electrode 112. In one embodiment of the present invention, the hole injection layer 122 is doped a p-type dopant having a weight concentration of 0.1% to 50%, such as TF-TCNQ, iron oxide (FeCl3) or a combination thereof, and the electron injection layer 132 is doped with a weight concentration of 1% to 99. % of n-type dopants, such as gold a halide to assist in the transmission of electrons or holes. Since the present invention uses a plurality of organic light-emitting units 116 stacked on each other to simultaneously emit light in series, charge generation between the respective organic light-emitting units 116 is provided. Preferably, layer 118 has the ability to generate or transmit electrons/holes. In one embodiment of the invention, the lowest unfilled sub-track (LUMO) of charge generation layer 118 is used. The highest fill-in-track domain (HOMO) of the hole injection layer 122 is between the lowest unfilled sub-track domain of the lower electron injection layer 132, so that electrons and holes can be smoothly transmitted between the respective organic light-emitting units 116. Further, in order to avoid damage to the organic material in the adjacent organic light-emitting unit 116 during the fabrication process, the charge generation layer 118 is preferably an organic material which can be fabricated by thermal evaporation. In order to satisfy the above conditions, in an embodiment of the present invention, the charge generation layer 118 comprises fuller: iflerene or a derivative thereof, Shikou C60, C7 0, C90, etc., 0632-A50370-TWf 7 -127 Soil = _, (10)·9_ In another embodiment of the present invention, the charge generation layer 118 contains oligofluorenes, terflurene, and trisyl. a compound uer (9,9-diaryfluorene) s), a 9,9-bisaryl fluorene oligomeric compound (〇ligc) (9,9-diaryfluGr_) s) or a derivative thereof' and the thickness of the charge generating layer 118 is substantially Qi nano To _ nano. It is to be forced again that although the organic light-emitting element 116 of the present invention is formed by taking only two organic light-emitting units 116 stacked on each other as an example, the organic light-emitting element 11Q may actually comprise a plurality of organic layers stacked on each other. The first generation (1) is provided, and a charge generation layer 118 is disposed between each adjacent organic light-emitting unit 116 to assist in the generation or transmission of electrons/holes. As described above, if the charge generating layer U8 in the organic light emitting element 11Q and the organic & light unit 116 below it have an additional buffer layer Μ. For the same reason, the material selection of the buffer layer 120 is also preferably between the charge generation layer 118 and the lowest unfilled sub-track domain of the sub-injection layer 132, so as to improve the electrons. The effect of injection. In one embodiment of the invention, the buffer layer 12 comprises a combination of inscriptions, silver, nickel, titanium, tiles, towns, faces, groups, or combinations of the foregoing. In addition, each of the organic light-emitting units in the organic light-emitting element 110 is also visible: = reverse! If desired, the same organic light emitting unit 116 is used, or the number = the same organic light emitting unit 116 is used for combination. For example, each of the organic light emitting units 116 in the organic light emitting unit may have the same light emitting color, or at least color. The organic light-emitting element iiq may be an upper light-emitting layer::=!, a lower-emitting organic light-emitting element or a double-sided light-emitting organic light-emitting element, and the color light is different from the other organic light-emitting units 116. The light emitted by the μ-light element may be red, green, blue or white light 0632-A50370-TWf 8 I27§ 252 -T9 Lai's Manual Amendment Date·September 26th is a step-by-step description of the present invention' The following examples are given, and conventional organic light-emitting 7G pieces are used as comparative examples, and tests are simultaneously conducted to clarify the superiority of the present invention. In the first embodiment of the present invention, the indium tin oxide (ITQ) as an anode is first treated with ultraviolet rays and ozone, and then the organic aromatic amine derivative having a thickness of about 6 nanometers is sequentially disposed thereon or The combination is used as a hole injection layer (hil), a thickness of about 20 nm, which is called a hole transmission layer (htl), a thickness of about 6 〇 m green light-emitting layer (4) L), and an electron transmission having a thickness of about 1 Q nm. Layer (etl) and A1g with a thickness of 20 nm (doped with a weight concentration of approximately η-type dopant, such as fluorinated recording to constitute - the first luminescent element, followed by a reductive thickness of about 2 (4) is a buffer layer and a carbon 6 〇 (c6 〇) having a thickness of about 5 nm as a charge generation layer, and then a vapor layer having a thickness of about 6 〇 nanometer as a hole injection layer on the charge generation layer. And incorporating a p-type dopant having a weight concentration of about 2%, such as = TCNQ', and then sequentially forming a thickness of about 2. The nanometer is deleted as the same, the transmission layer and the thickness are about 6Q. The green light-emitting layer of nanometer and the thickness of about two are: the transmission layer, and constitute a second light-emitting element, and finally on it A fluorination clock (LiF) having a thickness of U and a thickness of about 10 Å is used as a cathode. In the second embodiment of the present invention, firstly, the indium tin oxide UT (1) of the ultraviolet electrode is used to promote the six-hole order. In the danger zone, and then sequentially depositing the thickness of the machine (four) derivative or a combination thereof as the electric layer (hil), and the thickness of two meters as the hole transport layer (HTL), the thickness is about It is 6. Nano 1 〇 - MM doped with Mn has a weight concentration of about 2 〇% η type dopant, for example: for - m, then steamed with a thickness of about 2 nanometer layer of carbon 6咖) as a charge generation ^ ϋ plating thickness of about 60 nm of organic aromatic amine 〇 632-A50370-TWf 9 1278252 立正末日_5年 September 26曰I 3 2, and. As a hole injection layer, P-31 Cedar, such as F4-TCNQ, having a weight concentration of about 2% is incorporated therein, and then NPB having a thickness of about 2 Å is sequentially formed thereon as a hole transport layer. a green light-emitting layer having a thickness of about a ^ ◦ nanometer and an electron transport layer having a thickness of about 20 nm to form a second light-emitting element, and finally a lithium fluoride (LiF) having a thickness of about 1 nm is formed thereon. And aluminum (A1) having a thickness of about 100 nm for use as a cathode. At the third pass of the material, first, the ultraviolet ray and ozone are treated with indium tin oxide (ITQ) as an anode, and then the organic aromatic amine derivative having a thickness of about not meters or a combination thereof is sequentially evaporated thereon. As a hole injection layer (H L), a thickness of about 20 nm is deleted as a hole transport layer (htl), a thickness of about (9) nm, a green light-emitting layer (EML), and an electron having a thickness of about 1 Q nm. a transport layer (e and an Alg having a thickness of about 20 nm (doped with a weight concentration of about 2% n-type dopant, such as fluorine (tetra)) to form a -th-light-emitting element, and then (10) a thickness of about 2 The nano-sole is used as a buffer layer, and then the thickness of the buffer layer is about (9) Nai (four) NPB 乍 is the hole injection layer ' and the weight inhalation is about 2%, such as Η一TCNQ And then sequentially forming a coffee having a thickness of about 2 〇 as a power transmission layer, a green light-emitting layer having a thickness of about 60 nm, and an electron transport layer having a thickness of about (9) nm, and forming a a second light-emitting element, and finally a formation clock (LiF) having a thickness of about 1 nm and a thickness of about 100 nm In the fourth embodiment of the present invention, the first material is treated with ultraviolet rays and ozone to indium tin oxide (10) as an anode, and then the thickness is sequentially evaporated thereon. An organic aromatic amine derivative of about 6 〇Nei or a combination thereof as a hole injection layer (hil), a thickness of about 2Q nanometer as a hole transport layer (htl), a thickness of about 6 〇 nanometer ^ green An illuminating layer (EML), an electron transport layer (grandfather) having a thickness of about 1 〇 nanometer, and an Alq having a dryness of about 20 nm (doped with a weight concentration of about 2 core type dopants, for example, 632-A5〇) 37〇-TWf 10 .12戦9 1 wife's manual amendments such as fluorinated planing) to form a first - date: September 26, 2005, as a buffer layer, followed by 2 pieces 'The thickness of the re-steamed ore is about 2 nm • aromatic derivative or its group cooperation; the level of vaporization on the layer is about (9) Nai (4) organic-Μ 21 listen · layer, and the weight concentration in it is about 2^ ρ-type dopants, such as juvenile % sputum vrn A NQ ' and then sequentially formed a thickness, and the spoon is 20 NP NPB as a hole S.S ^ , 〇 Round layer with a thickness of about 6.0 nm of the green-pieces: two I. The electronic transmission layer of nanometers constitutes a second illuminating element tri having a thickness of about 1 nanometer -) and a thickness of about 100 nanometers (A1) for use as a cathode.
在本發明之第五實施例Ψ，+4 U 中f先利用紫外線與臭氧對作為陽 5==T崎處理，然後再於其上依序蒸鑛厚度約為 不米的有絲香胺衍生物或其組合作為電洞注入層（Η叫、 2Q奈米的卿作為電洞傳輸層（htl)、厚度約為 米的藍色發光層（EML)、厚声的炎Ί „ 又、、、、為10不米的電子傳輸層（ETL)以 及厚度約為20奈米之Alg(換雜有重量濃度約為2〇% 〇型換質， 2域化飽），以構成-第一發光元件，接著再蒸鍛厚度約為1〇 ^米的碳⑶（⑽）料電荷生成層，隨後秘電荷生成層上蒸鑛 尽度約為30奈米的有機芳#胺衍生物或其組合作為電洞芦乂 層，並於其中摻入重量濃度約為2%的p型推質，如f4_tcn^， 接著再於其上依序形成厚度約為2D奈权㈣作為電洞傳輪 層、厚度約為35奈米之黃色發光層以及厚度約為2〇奈米之電 傳輸層」而構成-第二發光元件，最後再於其上形成厚度約為丄 奈米的氟化鐘（LiF)及厚度約為㈣奈米的銘（A1)，以作為卜極 在本發明之第六實施例中，首先利用紫外線與臭氧對作為陽 極的氧化銦錫（ΙΤ0)進行處理，然後再於其上依序蒸鍍厚度約為 150奈米的有機芳香胺衍生物或其組合作為電洞注入層⑶工q… 0632-A503 7〇-TWf 11 :Ι27· 29 I寥利說明書修正本 厚度約為2◦奈米的刪作為電 ⑽=年9月26日 λλ ^ ^ „ 寻輸層（HTL)、厚度約為3〇奈 未的I色發光層（EML)、厚度約為 太 月戶厣的盔。, 不未的電子傳輸層（ETL)以 及；度、力為20奈米之Alq (摻雜有番旦：曲 、 例如氟化鉋)’以構成一第一發光里：：約為20ΐ n型摻質， 米的銘作域衝㈣及厚度約為1Qt：= 者再紐厚度約為2奈 处士、®陡从芯 U不未的碳60(C60)作為電荷 生成層，IW後再於電荷生成層上蒸 ^ ^ 、 度、力為6〇奈米的有機芳香 月女何生物或其組合作為電洞注入層， 9〇 r， _ 並於其中摻入重量濃度約為 2名的Ρ型摻貝，如F4 - TCNQ，接荽Α认孙 〇n .. 接者再於其上依序形成厚度約為 20奈未之ΝΡΒ作為電洞傳輸層、厚 以及厚度料3D奈米之電子料35奈狀黃色發光層 令至#甘… 傳輪層，而構成-第二發光元件，最 後再於其上形成厚度約為1奈米的 丁木的鼠化鋰（LiF)及厚度約為100 不未的鋁（A1)，以作為陰極之用。 在本發明之第七實施例中，首弁 粗 / 先利用紫外線與臭氧對作為陽 進行處理’然後再於其上依序蒸鐘厚度約為 a的有機芳香胺衍生物或其纪合作為電洞注入層（則、 „〇奈米的刪為電洞傳輪層(htl)、厚度約為3〇奈 米的1色發光層（EML)、厚度約為 及厚度約為2〇奈米之Alq(摻雜有重γ、γΓ 丄g(t雜有重I濃度約為2〇% η型摻質， :如氣細，以構成—第―發光元件，接¥再蒸鍍厚度約為2奈 米的銘作為緩衝層以及厚度約為1Q奈米的碳…⑽）作為電荷 生成層Ik後再於電何生成層上蒸鍍厚度約為⑽奈米的有機芳香 胺衍生物或其級合作為電洞注人層，並於其中摻人重量濃度約為 24 p型摻質’如F4_TGNQ，接著再於其上依序形成厚度約為 20奈米之则作為電洞傳輸層、厚度約為35奈米之黃色發光層 以及厚度約為30奈米之電子傳輸層，而構成—第二發光元件，最 後再於其上形成厚度約為丄奈米的氟化鐘（山）及厚度約為ι〇〇 0632-A50370-TWf 12 日期：2005年9月26日 12職9 媸寨利説明書修正末 奈米的鋁（A1)，以作為陰極之用 • 根據發明人之實驗測試，習知技術中的標準綠光有機發光元 件在達到飽和電流密度（current dens±ty)後，其發光效率大 約為9至1〇燭光/安培，而在第一與第二實施例中，發光效率則 可各別達到约Η與2〇燭光/安培（cd/A)。在第三與第四實施例 中，發光效率則只各別達到約18與17燭光/安培（cd/A)。而對 於發光效率較低之標準黃光與藍光有機發光元件（約為4燭光/安 培）’在採用本發明之架構後，例如在第五、第六與第七實施例中， 發光效率則可各別達到約8、7以及7濁光/安培（cd/A)。相較 _於習知技術，本發明之有機發光元件主要係藉複數個相互堆疊的 有機發光單元U6,以串聯的方式同時發光，以提高有機發光元 件的效率與亮度，而能進一步改善顯示面板的顯示品質。 雖然本發明已以數個較佳實施例揭露如上，然其並非用以限 疋本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内， 當可作任意之更動與料，因此本發明之保護範圍當視後附之申 請專利範圍所界定者為準。In a fifth embodiment of the present invention, in the +4 U, f is first treated with ultraviolet light and ozone as a cation 5==T, and then sequentially subjected to a scented amine derivative having a thickness of about two meters. The object or a combination thereof is used as a hole injection layer (howling, 2Q nanometer as a hole transport layer (htl), a blue light-emitting layer (EML) having a thickness of about m, a thick sound Ί 又 、,,, , an electron transport layer (ETL) of 10 mm and an Alg having a thickness of about 20 nm (replacement with a weight concentration of about 2% 〇 type change, 2 domain full), to constitute - the first light-emitting element Then, the carbon (3) ((10)) charge generation layer having a thickness of about 1 〇 ^ m is further steamed, and then the organic aromatic # amine derivative or a combination thereof having a distillation endurance of about 30 nm on the secret charge generation layer is used as electricity. The hole reed layer is mixed with a p-type pusher having a weight concentration of about 2%, such as f4_tcn^, and then sequentially formed with a thickness of about 2D (4) as a hole transfer layer and a thickness of about a yellow light-emitting layer of 35 nm and an electrotransport layer having a thickness of about 2 nm. The second light-emitting element is formed, and finally a thickness of about 丄 is formed thereon. The fluorination clock (LiF) of nanometer and the thickness (A1) of the thickness of (four) nanometer, in the sixth embodiment of the present invention, the first use of ultraviolet light and ozone as indium tin oxide as an anode (ΙΤ0) The treatment is carried out, and then an organic aromatic amine derivative having a thickness of about 150 nm or a combination thereof is sequentially deposited thereon as a hole injection layer (3). 0632-A503 7〇-TWf 11 : Ι27· 29 I The profit-making specification corrects the thickness of about 2 nanometers to be deleted as electricity (10) = September 26th λλ ^ ^ „ The search layer (HTL), the thickness of about 3 〇 的 的 I I I EM EM EM 、 、 It is about the helmet of Taiyuehu. The electron transport layer (ETL) and the 20% Alq (doped with dandan: 曲, such as fluorinated planer) In the illuminating:: about 20 ΐ n-type dopant, the meter of the rice is rushed (four) and the thickness is about 1Qt: = the thickness of the nucleus is about 2 nanometers, and the hardness is from the core 60 (C60) The charge generation layer, after IW, is steamed on the charge generation layer, and the organic aromatic moon female or its combination of 6 〇 nanometer is used as the hole injection layer, 9〇 r, _ and incorporate into it a bismuth-type doped shell with a weight concentration of about 2, such as F4 - TCNQ, and then pick up the 〇 〇 . . . . 再 再 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依As the hole transport layer, the thickness and the thickness of the material 3D nano-electronic material 35, the yellow-like light-emitting layer is ordered to pass through the wheel layer, and the second light-emitting element is formed, and finally a thickness of about 1 nanometer is formed thereon. Lithium rattan (LiF) of rice and rice (A1) having a thickness of about 100 or less for use as a cathode. In the seventh embodiment of the present invention, the first 弁 / / first use ultraviolet ray and ozone pair Treated as a cation, and then sequentially vaporized an organic aromatic amine derivative having a thickness of about a or a discusation of a hole injection layer (then, 〇 〇 的 删 电 电 电 ( ( (htl a 1-color luminescent layer (EML) having a thickness of about 3 nanometers, an Alq having a thickness of about 2 Å and a thickness of about 2 nanometers (doped with heavy gamma, gamma Γ 丄g) 2〇% η-type dopant, : If the gas is fine, to form - the first illuminating element, and then vapor-deposited with a thickness of about 2 nm as a buffer layer and a thickness of about 1Q nm. Carbon (10)) as a charge generating layer Ik, then depositing an organic aromatic amine derivative having a thickness of about (10) nanometers on the electrogenerated layer or a combination thereof into a hole injection layer, and incorporating a weight concentration therein A 24 p-type dopant such as F4_TGNQ, and then sequentially formed thereon to have a thickness of about 20 nm as a hole transport layer, a yellow light-emitting layer having a thickness of about 35 nm, and a thickness of about 30 nm. The electron transport layer constitutes a second light-emitting element, and finally forms a fluorinated clock (mountain) having a thickness of about 丄 nanometer and a thickness of about ι〇〇0632-A50370-TWf. 12 Date: September 2005 On the 26th, the 12th position of the 9th Zhaizhai manual revised the aluminum (A1) at the end of the nanometer for use as a cathode. • According to the experimental test by the inventors, the standard green organic light-emitting element in the conventional technology reaches the saturation current density ( After current dens ± ty), the luminous efficiency is about 9 to 1 〇 / amp, while in the first and second embodiments, the luminous efficiencies can reach about Η and 2 〇 / amp (cd / A) ). In the third and fourth embodiments, the luminous efficiencies were only about 18 and 17 candelas per amp (cd/A), respectively. For standard yellow and blue organic light-emitting elements (about 4 candelas/amperes) with low luminous efficiency, after using the architecture of the present invention, for example, in the fifth, sixth and seventh embodiments, the luminous efficiency can be Each achieved approximately 8, 7 and 7 turbidity/amperes (cd/A). Compared with the prior art, the organic light-emitting element of the present invention mainly uses a plurality of organic light-emitting units U6 stacked on each other to simultaneously emit light in series to improve the efficiency and brightness of the organic light-emitting element, and can further improve the display panel. Display quality. While the present invention has been described above in terms of several preferred embodiments, it is not intended to limit the invention, and the invention may be practiced without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
0632-A50370-TWf 13 1278252 第94110729 1窶利説明書修正本 日期：2005年9月26日 【圖式簡單說明】 第1圖為一習知有機電激發光顯示面板之剖面示意圖。 第2圖為本發明第一實施例中一有機發光元件之剖面示意 圖。 第3圖為第2圖中有機發光單元之剖面示意圖。 【主要元件符號說明】 10〜有機電激發光顯示面板； g 12〜基板； 14〜下電極； 16〜有機發光單元； 18〜上電極； 20〜有機發光元件； 22〜電洞注入層； 24〜有機發光層； 26〜電子注入層； 110〜有機發光元件； 112〜下電極； 114〜上電極； 116〜有機發光單元； 118〜電荷生成層； 12 0〜緩衝層； 122〜電洞注入層； 124〜電洞傳輸層； 126〜有機發光層； 128〜電子注入層； 132〜電子傳輸層。 0632-A50370-TWf 140632-A50370-TWf 13 1278252 94110729 1 说明书利说明修订修正 Date: September 26, 2005 [Simple diagram of the diagram] Figure 1 is a schematic cross-sectional view of a conventional organic electroluminescent display panel. Fig. 2 is a schematic cross-sectional view showing an organic light emitting element in the first embodiment of the present invention. Fig. 3 is a schematic cross-sectional view showing the organic light emitting unit in Fig. 2. [Main component symbol description] 10~organic electroluminescent display panel; g 12~substrate; 14~lower electrode; 16~organic light-emitting unit; 18~upper electrode; 20~organic light-emitting element; 22~hole injection layer; ~ organic light-emitting layer; 26 to electron injection layer; 110 to organic light-emitting element; 112 to lower electrode; 114 to upper electrode; 116 to organic light-emitting unit; 118 to charge generation layer; 12 0 to buffer layer; 122 to hole injection Layer; 124~ hole transport layer; 126~ organic light-emitting layer; 128~ electron injection layer; 132~ electron transport layer. 0632-A50370-TWf 14