1276197 玖、發明說明 【發明所屬之技術領域】 本發明是關於-種將半導體晶片等的晶片元件進行減 昼吸附、並從例如切晶膠帶(dicing tape)等拾取的吸頭 (collet)及其使用方法。 、 【先前技術】 製造半導體裝置等之電子零件、電子機器的過程當中 大多會經歷晶片元件(以下亦簡稱為「晶片」)的拾取步驟。 例如，半導體裝置-般是從形成有多數個半導體元件的半 =晶圓-次製造而成’而該時是藉由以下的要領來實施 半導體晶片的拾取步驟。 “首先’將形成有多數個半導體元件的半導體晶圓貼在 黏著片。仗黏著片上依序拾取利用晶片切割步驟將半導體 晶圓切割為各元件而形成多數個半導體晶片。此半導體晶 片：拾取是使用一種具有稱為吸頭之專用治具(直接接： +導體晶片的吸附用頭部）的晶片接合機或晶片拾取機 的裝置（以下統稱為接合機）來進行。第8圖是半導體晶月 之拾取步驟的模式圖。圖式 " 丑曰曰 α式T的虛線疋彳之外部無法看見的 内部結構、。與吸頭接合器2連接的吸頭】是使其凹部ι〇 抵接於半導體晶片3 —面，並且在抵接狀態下從吸引孔21 進订真空吸引，藉此使凹部】〇減壓而吸附前述半導體晶 3的治具。在此，所謂使吸頭之凹部1〇抵接是使形成凹部 10的側壁11及半導體晶片3的一面形成密閉空間。圖中， 凹部10的粗箭頭表示朝上方吸引。該半導體晶片3是在被 j 14984修正本 5 1276197 吸頭1吸附的狀態下從 傳送至固定於導線架等:”：剝離後，加以拾取，並且 當中，為了使丰^ μ 、 個步驟。此外，在拾取步驟 馮了使丰導體晶片3容县γ # 一 u 從前述黏著片4的下方利用黏者片4剝離，-般是 體晶片3,俾使黏著片夺“、:十5搞著黏著片4頂出半導 度變得更大。 、目對於晶片元件3上的剝離角 先前技術的吸頭中已知 之前參照的第8圖是利用橡”碩及角錐吸頭兩種。 圖。橡膠吸頭的側壁U=:頭吸附晶片元件1的模式 彈性體所構成，通常凹部1G㈣==成橡㈣橡勝狀 片元件3之柘而接 ^面積小於所要吸附的晶 垂直接觸曰m、°因此’使用橡膠吸頭時是使側壁11 :直接觸晶片兀件3的板面而 — 錐吸頭拾取曰h分A q “進仃扣取。弟9圖是利用角 口面積大㈣要吸㈣晶片元件之㈣10的開 1 〇的側壁11是形成角錐的_部分’貝二成凹部 1。為上窄下寬之結構。所刀*所要減壓的凹部 ^ ^ 仕便用角錐吸頭時是使侧辟1 1 的内補面接觸於晶片元件3而進行拾取。 土 近年來，隨著1C卡等的普及，曰 發展。想要利用習知的吸頭^取朝薄型化 即使利用頂針推頂等，晶片元件還是會跟著 黏者膠π表面形狀而變形，以致 分的剝離角度，而出現表面無法獲得充 …0士 的情況。第10圖是使用橡[Technical Field] The present invention relates to a collet which picks up a wafer element such as a semiconductor wafer and picks up it from, for example, a dicing tape or the like. Instructions. [Prior Art] In the process of manufacturing an electronic component such as a semiconductor device or an electronic device, a chip component (hereinafter also referred to simply as a "wafer") is often subjected to a pickup step. For example, a semiconductor device is generally manufactured from a half-wafer-sub-form in which a plurality of semiconductor elements are formed, and at this time, a semiconductor wafer pick-up step is performed by the following method. "Firstly, the semiconductor wafer formed with a plurality of semiconductor elements is attached to the adhesive sheet. The squeegee is sequentially picked up to cut the semiconductor wafer into various components by a wafer dicing step to form a plurality of semiconductor wafers. The semiconductor wafer: picking is It is carried out by using a wafer bonding machine or a wafer pickup machine (hereinafter collectively referred to as a bonding machine) having a dedicated jig called a tip (directly connected to a suction head of a conductor wafer). Fig. 8 is a semiconductor crystal. Schematic diagram of the picking step of the month. The pattern " the internal structure of the ugly alpha type T is not visible outside the dotted line, and the tip attached to the tip adapter 2 is such that the concave portion is abutted On the surface of the semiconductor wafer 3, the vacuum suction is applied from the suction hole 21 in the contact state, whereby the concave portion is decompressed to adsorb the jig of the semiconductor crystal 3. Here, the concave portion 1 of the suction head is used. The 〇 contact is such that the side wall 11 forming the recess 10 and one surface of the semiconductor wafer 3 form a sealed space. In the figure, the thick arrow of the recess 10 indicates that the semiconductor wafer 3 is attracted upward. Amendment 5 1276197 When the suction head 1 is sucked, it is transferred from the fixed to the lead frame, etc.: ": After peeling, pick it up, and in order to make it a step. In addition, in the picking step, Feng Feng made the conductor wafer 3 Rongxian γ #一u from the bottom of the adhesive sheet 4 by the adhesive sheet 4, which is generally the body wafer 3, so that the adhesive sheet takes ",: 10 The adhesion of the adhesive sheet 4 to the semi-conductivity becomes larger. The purpose of the peeling angle on the wafer member 3 is as known in the prior art. The eighth drawing previously referred to is the use of the rubber and the pyramidal tip. Figure. The side wall of the rubber tip U=: the head elastic body of the wafer element 1 is adsorbed by the head, and usually the concave portion 1G (four) == into the rubber (four) rubber sheet element 3 and the area is smaller than the vertical contact 曰m of the crystal to be adsorbed, ° Therefore, when using the rubber tip, the side wall 11 is made to directly contact the surface of the wafer element 3 - the cone picking head picks up 分h points A q "intake and buckle. The figure 9 is to use the corner area to be large (four) The side wall 11 of the opening (4) of the (four) wafer component is a _ portion 'being two-shaped concave portion 1 forming a pyramid. The structure is a narrow upper and a lower width. The concave portion of the knife to be decompressed is used. In the meantime, the inner complementary surface of the side plate 1 is brought into contact with the wafer element 3 and picked up. In recent years, with the spread of the 1C card, etc., it has been developed. When the ejector pushes the top, etc., the wafer component will still deform along with the surface shape of the adhesive π, so that the peeling angle of the splitting may occur, and the surface cannot be charged. The 10th figure is the use of the rubber.
膠吸頭％，第11圖是#用& Μ P 间— s疋使用角錐吸頭時的上述問題之示音 圖。在這種情況下，若以加強吸^方式勉強使其剝離: 1 J4984修正本 1276197 則可能會導致晶片元件破損 本發明是鑒於上述問題 一種即使是吸附時會產生變 用會導致破損的強力吸引而 利用該吸頭的拾取方法。 【發明内容】 點而研創者，其目的在於提供 形的薄型晶片元件，也不需使 可加以吸附並拾取的吸頭以及 本案發明人首先為了使晶片元件的端部確實剝離，試 用如第12圖所示使吸頭1所要減壓的凹部H)開口緣形成 晶片兀件3端部附近(與晶片元件3外周緣的距離d為 0.3匪以下)的大小的橡膠吸頭，以拾取晶片元件3。然而 使用、種吸頭1的情況下，曰曰曰片元件3的中心部附近容易 變形（彎曲）而***，而無法解決前述問題。 而經本案發明人深入研究，已開發出一種吸頭，其突 起體設在凹部10内，使該突起體與抵接凹部10的晶片元 件3板面接觸’而完成具有以下特徵的本發明。 ⑴-種吸頭’具有用以抵接晶片元件之一方板面的凹 卩-可在抵接狀恶下使凹部内減壓，藉此吸附並拾取該 晶片元件’其中’在該凹部内設有從該凹部之内部側面及/ 或内P底面大起的突起體，且該突起體與抵接凹部的晶片 元件板面相接觸。 (2)如上述（1)之吸頭，其中，形成上述凹部之側壁厚 度，最薄的部分為〇 3mm以下。 ()士上述（1)或（2)之吸頭，其中，上述突起體是從上 速内部側面突《’並且與抵接凹部的晶片元件板面呈棱線 3】4984修正本 7 1276197 狀接觸。 ,(4)如上述（1)或（2)之吸頭，其中，上述突起體是從上 迟内。卩底面犬出，而且未與上述内部側面接觸。 (5)如上述（1)或（2)之吸頭，其中，上述突起體接觸晶 片元件板面’纟上述凹部與晶片元件表面呈稜線狀抵接。 ⑷如上述⑴或（2)之吸頭，其中，在上述凹部内設有 複數個相互獨立的上述突起體，且該突起體是各自以〇〇ι 至50mm2的接觸面積與晶片元件板面接觸。 ⑺如上述⑴或（2)之吸頭，其中，上述突起體是由多 孔橡膠構成。 a (8)如上速⑴至⑺中任_項之吸頭，其中，形成上述 :二的側壁是由主要成分為天然橡膠或合成橡 性體所構成。 / # (9卜種吸附並拾取晶片㈣之方法，係使上述⑴至⑻ 曰：：：之吸頭的凹部抵接於晶片元件，俾使所要吸附的 :曰〇〇二0之至少一個外周緣與上述凹部之開口緣的距離為 0.001 至 0.3mm。 (1 0)—種吸附並和^敌日 一 “件之方法’係使上述⑴至 起…項之吸頭的凹部抵接於晶片元件，使去除上述突 部開口面積相對於所要吸附的晶片元件板面積 的比率為70至99.99%。 預 【實施方式】 以下’ 一面來日g闯— I、、、圖式，一面詳細說明本發明之吸頭。 第1圖是本發明哄筛 、 月及頭的示意圖，第1圖（A)是吸頭i 314984修正本 1276197 之底面（與晶片元件3接觸的面）圖，第】圖⑻是從側 看吸頭1的圖。第1圖（B)及後述各圖式中的虛線是從外: 热法看見的内部結構。在凹部〗〇抵接於晶片元件之一方 面的狀態下’經由吸引孔21從吸頭接合器2側進行真空^ 引’可使凹部10減壓而吸附晶片元件3。在此，所謂： 吸頭之凹音M〇抵接」是使構成吸頭1的構件(例如側壁ln 及半導體晶片3的—方板面形成可維持減隸態的空間。 此外，只要可維持減壓狀態，則亦可在前述空間内嵌入夕 孔橡膠等的構件(參照後述第7圖的態樣)。本發明吸頭夕 係在凹部10内設有從該凹部1〇之内部側面⑼及/或内 底面102犬起的突起體12 ’且該突起體12是與抵接於四 :10的晶片元件3板面接觸。在本說明書中，將吸頭之凹 9内面中側· i i之内側部分稱為内部側自1 〇 1，將 其以二的内面稱為内部底面1〇2(參照第】圖⑺））。 、 弟2圖是利用本發明之吸頭i吸附並拾取晶片元件3 :步驟模式圖。由於本發明之吸頭！具有突起體η，因此 晶片兀件3不容易朝凹部1〇的内部變形，而可使晶片元件 3保持平坦。只要是這種態樣，即使是薄型的晶片元件3， 也可與厚型晶片元件3 一樣在晶片元件3與黏著片4的表 面之間獲得充分的剝離角度’因此可穩定進行拾取。 本心月吸碩所要拾取的晶片元件只要是在製造電子零 ^電子機态時需要藉由吸附而加以拾取的元件、構件皆 可’而其種類、形狀則無特別限定。由於本發明之吸頭可 拾取習用吸頭所不易拾取的薄型晶片元件，而且也可保持 314984修正本 9 1276197 1叮70件之良好狀態，因此不論晶片元件的厚度如何 «可適用。太丄" * ’所谓薄型晶片元件是指晶片元件的 在15:_以下(較佳為15至75_)。 厂予度 右要4述上述拾取步驟，則最好是先使吸頭1的 1 0抵接U片元# 3板面而吸附晶片^件3，再利用頂 或是日本特開_1-U8862號公報所記載的機構(亦即= :用頂針5將黏著片往上頂，而是將黏著片往下: 未，行拾取’但亦可使利用吸頭丨的吸附與利用:: =曰本特開2。01_1 1 8862號公報所記載之機構的拾取 進仃’或是在利用頂針5頂出晶片元件3的狀態下， 、及頭1壓接於晶片元件3 ’再藉由該壓力所產生的橡豚 及吸附將晶片元件3保持在吸頭卜然後在拉起= 犄使晶片兀件3形成平坦狀而加以拾取。 ” Ϊ發明吸頭1的側壁11厚度(第1圖⑻中的距離D) :缚部分以o.3mm以下為佳，較佳為〇 〇5至〇1_。 :為側壁11的厚度越薄，越可防止吸頭與相鄰晶片接觸， 且由灰可：附到晶片端部附近，因此較容易吸附晶片元 ，但另一方面’為了防止使用時的真空不良，又以側 壁較厚者為佳。而且，為了陡L』 Η姑人… 4了防止與相鄰晶片接觸及減少晶 片接合時的作業空間，吸頭丨之側壁u厚度之最厚部分以 〇·4至2mm為佳。 —吸頭1的材質（尤其是側壁11的材質）並沒有㈣㈣ 疋’但：θ曰片：件；之板面的凹凸吸收性良好這點看來， 乂上述白知橡胗及頭所使用的天然橡膠或合成橡膠等之橡 314984修正本 10 1276197 膠硬度 JIS-Α(依據 jiS K6253)g 7 為合適。 .'，、乂下的橡膠狀彈性體較 ^及碩〗的材料可依需要添加抗靜電钗 几臭氧老化劑、軟化劑等添加劑。 ’电刀）、 本發明吸頭1的特徵是在凹部 突起體12有後述各鍤铲样, °有大^肢12 〇 有心各種祕。由於突起體Η的存在 曰曰片凡件3朝凹部1〇的内部 保拄巫to 门 且j便日日片7L件3 保料坦，因此較容易從黏著片4剥離。 底面二3曰圖是本發明吸頭的一例示圖，第3圖⑷是吸頭之 &面（與日日片元件3的接網 、 ”妾觸面）圖，该圖的I-Ι剖面圖為第3 -。該圖所示的吸頭！在凹部1〇内具有從凹部 ^則面^突起的突起體12。突起體12只要設置成至少 、吸：柃可與側壁u 一同接觸於晶片元们即可。較佳 為·突起體12是設置在距離側壁丨丨最下部(與晶片元件3 妾觸的^刀）為_300陶至+3〇〇_的間距。（參照第3圖⑻） 的位置/、要设在該範圍内的位置，即可藉由拾取時的推 [使大起體1 2容易接觸於晶片元件3。在此，距離c為正 時表7突起體12比側壁η突出（該態樣未圖示），距離c 為負恰表不大起體12比側壁11凹入（第3圖（Β)的態樣）。 大起體1 2的材料並沒有特別的限定，例如可為與側壁 11相同的材料’亦可為塑膠、金屬等。突起體12本身亦 可為具有透氣性的多孔橡膠，該態樣如後文所述。其他， 、赵肢1 -的較佳材料例如有玻璃、尿炫（ureti]ane)、蜜胺 (melamme)、陶曼、矽、纖維素、無機物（岩石）等，另外亦 可為這些的複合物或是此等之多孔體。 π 314984修正本 1276197 使用本發明吸頭1時，8 疋使包含突起體12的凹部10 抵接於晶片元件3。從確實防 — 貝防止晶片兀件3變形及用以吸 附並保持晶片元件3之觀里占而丄 辦”、、占而g，突起體12接觸晶片元件 3的面積相對於去除該突起俨 大咤肢12時凹部1〇之開口面積（亦 即第1圖（A)的LxW)的比率？ ςο/ η u千取好疋5%至90%。然而，突 起體12本身具有透氣性的愔 W h况下（例如為多孔橡膠的情 況），由於可經由突起體士 6 ^ 灸筱12本身來吸附晶片元件3，因此 前述㈣面積的比率可以更高（具體而言為5%至1〇〇%)。 第3圖（A)之吸頭的情況下，凹部1〇受突起體12隔 開。在這種情況下，最好設置如第3圖（B)所示的通氣孔， 則更經由吸弓UL 21白勺真空吸引使隔開的所有凹部ι〇減 I亦可不设置通氣孔，而是例如將吸引孔2 1分散在吸頭 1的本體内使隔開的各凹部10減壓，或是亦可在突起體12 的底面（與晶片元件3接觸的部分）設置一個以上的微細凹 凸，藉此形成不與晶片元件3接觸的部分而使凹部丨〇的各 減壓（兩種態樣皆未圖示）。 大起體1 2的形狀並沒有特別的限定。以下顯示突起體 的幾個態樣，但本發明並不限於這些態樣。 上述參照了第1圖至第3圖的吸頭1，是使突起體j 9 從凹部1 0的内部側面1 〇 1突起，並且與抵接於凹部〗〇的 晶片元件3之板面接觸成棱線狀的態樣。所謂使突起體】2 與晶片元件3接觸成稜線狀是使突起體1 2接觸晶片元件3 之部分的寬度最好在0.5mm以下。突起體12從内部側面 101突起的角度為1至179° (較佳為1〇至170。，更佳為 12 314984修正本 1276197 至150 )。該突起物12沾办1 切12的剖面形狀可為（三S $ 夕角形、圓形、橢圓形、< 形U上的） '疋廷些形狀之組合。 態樣中，益論是只右空如μ 另外，太 …冊疋”有大起體12之一端接觸於 本 的結構（第1圖）、或是兩一 * Ί 4側面101 飞疋兩^皆接觸於内部側面 (弟3圖）皆可。設在吸 1的結構 啤1的犬起體12的數量並、、々女 的限制，而可依晶片元件 ，又有特別 τ J的大小或晶片元件3 擇適當者。另外，一個吸s 、门彳性選 lu及頭1内的突起體12，亦 有本態樣的突起體12及其他態樣的突起體12。同時具 第4圖是本發明吸頭1底面的例示圖。該吸頭卜 突起體12從内部底面102突出，而且並未與内部側疋使 :觸的態樣。突起體12的剖面形狀可為多角形或擴圓：1 ::攻些形狀的組合。突起體12與側壁u的間 ； 起體！2彼此之間的間隔並沒有特別的限制，而可 - 件3的剛性選擇適當者，但間距越小，晶片元件3在二 的變形量就越少，因此較為理想。具體而言，㈣θ 與側壁η白勺間隔（彼此之間最接近的部分）最好是〇.二至2 Umm’相鄰突起體12之間的間隔（彼此之間最接近的部 分）最好是0.0!至0.5mm。另外，—個吸頭i内的突起體 1 2亦可同時具有本態樣及其他態樣的突起體。 Λ第5圖是本發明吸頭1底面的例示圖。該吸頭1的特 徵為：使突起體〗2接觸於晶片元件3板面，藉此形成使凹 部1〇與晶片元件3板面抵接成稜線狀的構成。在此，所謂 使凹部1 0形成稜線狀，是指吸頭底面中突起體1 2以外的 凹一 1 0為稜線狀（寬度最好在〇 · 5 m ηι以下）。在此情況下， 314984修正本 13 1276197 突起體12可從内部側面1〇]突起、或是僅严 突起。突起體12的大小及形狀並沒二部底面102 。1寸乃丨J的fig細 ^ 形狀可為多角形、圓形、橢圓形等，但+ ，/、剖面 最好不要太大，而且最好至少在側壁】丨附、:、壓的凹部10 置吸引路徑，以便進行吸引。另外，—k的凹部10配 體12亦可同時具有本態樣及其他態樣的突：體内的突起 第6圖是本發明吸頭】底面的例示圖。該 有複數個小型突起體12的態樣。所謂小、-具 各突起體！2以0.01至5〇賴2、較佳為〇 〇3至2二，疋指 觸面積與晶片元件3接觸的構件。複數個突起二^ 6圖所示’可排列成規則的格子狀，但其配置並沒有特Z ^限疋。突起體12的形狀並沒有特別的限定，基於容Μ =頭=:以圓柱、多角柱、圓錐梯形、多角錐梯形 乂及這些形狀的組合等為佳。在此’圓形包含擴圓形，多 角形為三角形以上。另外，一個吸頭i内的突起體η亦可 同具有本態樣及其他態樣的突起體。 第7圖是本發明吸頭丨底面的例示圖。該吸頭丨之突 起體12為多孔橡膠的態樣。在此，所謂「多孔橡膠」是由 JIS L1096所測定的格利（Gurley)透氣度為〇 〇5至1⑻⑽〇 心/100cc(較佳為〇」至1〇〇〇〇秒/1〇〇cc)的橡膠。本態樣的 吸碩1在使用時是將具有多數個細孔的多孔橡膠作為突起 紐1 2而接觸於晶片元件3，同時使多孔橡膠的細孔減壓以 促進晶片元件3的吸附。因此，在本態樣的情況下，突起 體1 2亦可分布在整個吸頭1的凹部1 〇。 314984修正本 14 1276197 如上所述的本發明吸頭1之製造方法並沒有特別的限 制’而可適當使用射出成型等的擠製成型、削切成型等— 般的橡膠成型法等。另外’如上所述，突起體12在材料上 亚’又有特別的限定，只要依所使用的材料利用嵌入、膠黏 劑、熔接等一般的方法形成即可。 ” 利用本發明的吸頭1吸附並拾取晶片元件3時，最好 使所要減壓的吸頭凹部1〇達到晶片元件3的端部附近來進 订拾取。具體而言’第2圖中的距離d(晶片元件3之外周 緣與吸頭1的凹部10之開口緣的距離）以〇3mm以下^ 佳’較佳為0.001至0 2mm。如上述，藉由吸引晶片元件 3的端部附近，可確實使晶片元件3的端部從黏著片4剝 利用本發明之吸頭1時，尤其在薄型晶片元件時，為 了確實吸附，最好使大部分的晶片元件3板面與吸頭！的 凹部1〇抵接。去除突起體12時的凹部1〇之開口面積相對 方、所要吸附的Βθ片元件3表面積的比率以至99.99%為 佳，較佳為_至99.5%。在此，所謂「去除突起體η時 凹°"〇之開口面積」是指帛1圖(Α)中Lx\V的面積。 如上所述，關於利用本發明吸Μ拾取晶片元件3的 方法’可制^所使用之㈣頂針5的方法、或是 特開2 0 0 1 -1 1 8 8 6 2號公報讲-ρ # + 報所圮载之將黏著片4朝下方吸引 的方法等習知方法。此夕卜，只要使用低角度剝離力極低， 且仞始彈性也極低的黏著片4， 犹+而要使用刖述頂針5 寺的輔助機構，而可僅利用本吸頭！來拾取晶片元件3。 314984修正本 15 1276197 在此，所謂「低角度剝離力極低」表示由定角度剝離 力測定裝置所測定之1 5 °剝離力為1 ·0N/ ；[ 0m以下，所謂 「初始彈性極低」表示由拉伸試驗機所測定之初始彈性率 為20至200MPa。低角度剝離力極低，且初期彈性也極低 的黏著片4已知有使用（包含直鏈狀）低密度聚乙烯樹脂、 乙烯-甲基丙烯酸共聚物樹脂等的薄片，亦可直接使用市面 上販售的「Evolue」、「Nucrel」等。 以下，用實施例及比較例來詳細說明本發明，但本發 明並不受這些範例的任何限定。 (第1實施例） 於100重ϊ份之橡膠材料NBR(NitrUe_Butadiene Rubber，腈丁二烯橡膠）中摻入重量份之抗靜電劑炭堃 (橡膠硬度JIS-A為30)，再以射出成型法形成第i圖的吸 頭1。此時，側壁η的外形尺寸為6 8mmx6 8mm，側壁 U的厚度為〇.一，突起體12是以長度3至4mm、寬度 〇.5mm的稜線狀接觸於晶片亓杜q 曰乃70件J。側壁Π及突起體12 形成在同一平面而成為吸頭】的危 一 次頌1的底面。利用安裝有上述吸 頭1的晶片接合機’以拾敗兮目上产& 心取，亥貼在作為黏著片4的切晶膠 帶（ELEP-Holder，UE]〇8KGT、n 击不 曰東電工（股）製）上之厚度 50μηι、上面為 7.0mmx7.〇mm 的曰 的曰曰片tl件3。拾取時是使 吸頭1抵接於晶片元件3的中麥，Α ]Τ央再經由吸引孔21進行真 空吸引，然後利用四支頂針5(斜 (，十巨為6 · 〇 m m X 6 · 0 m m)往上 頂出0.5mm。因此，晶片开杜 件3之外周緣與吸頭1之凹部 314984修正本 16 1276197 1 〇之開口緣的距離約為〇.2mm。 (第2實施例） 士第3圖之方式δ又置吸頭1的突起體^。亦即，以 0. 5匪的間距平行於凹部1〇之四個内部側面ι〇ι而形成突 起體12。第3圖（Β)的間距q〇mm，且在每—突起體12 中各設有三個透氣孔。其他則根據第1實施例之方式製造 吸頭1，以進行晶片元件3的拾取。 (第3實施例） 如第4圖之方式設置吸頭i的突起體12。亦即，從距 離内部側面HH約0.2mm的位置，如第4圖以等間隔配置 :面寬度為0.5mm、長度為3_之長方形突起冑Η、以 軸為L—、長轴為2_之擴圓形突起體12。 =第1實施例之方式製造…，以進行晶片元件3 的拾取。 (第4實施例） 如第5圖之方式設置吸頭丨的突 1。 的寬度為。.一沿著内部側面1〇:二= 為“一至9.3_的凹部i。。其他條長度 方々式製造吸頭】，卩進行晶片元件3的拾取第1貫施例之 (苐5貫施例） 如第6圖之方式設置吸頭〗的突 離内部側面101、約〇.2mm的位置，如 ’亦即’從距 地將剖面直徑為〇.3mm之圓形突起 回之方式等間隔 他則根㈣丨實施例之方式來製造 、，以進行晶片元 314984修正本 17 口76197 件3的拾取。 (第6實施例） 如第7圖之方式設置吸頭丨的突起體12。亦即，在整 個四部10將多孔橡膠（日東電工（股）製Sun MAp Hp、格 剎通氣度為0.8秒/i00cc)。其他則根據第}實施例之方式 製造吸頭1 ’以進行晶片元件3的拾取。 (第7實施例） ；員1之側壁11的厚度設定為0 · 5mm，其他則根據 第1實施例之方式製造吸頭1，以進行晶片it件3的拾取。 (第8實施例） 員1的外形尺寸設定為6 · q m 1Tl x 6 · q m m，並且將突 起體12的長度設定為2至3匪，其他則根據第！實施例 之方式製造吸頭1，以進行晶片元件3的拾取。' (比較例1) 在吸碩1的凹部1 0内不設置突起體12，而形成中空 狀態，並且將吸頭1的外形尺寸設定為6.0職x6.0mm，: 他則根據第1膏祐你I + /、 貝也例之方式製造吸頭j，以進行晶片元件3 (比較例2) 在吸頭1的凹部 態’其他則根據第j 片元件3的拾取。 (評估試驗） 利用實施例及比 10不設置突起體12，而形成中空狀 實施例之方式製造吸頭1，以進行晶 較例中所製造的吸頭，反覆進行晶片 18 314984修正本 1276197 元件之拾取各 「捡取成功率 表示。 人然後觀察其狀態。結果顯示於表】。 」疋以（拾取成功的次數）/(反覆次數：20)來 表 第1實施例The glue tip %, Fig. 11 is a sound diagram of the above problem when using the < Μ P - s疋 using the pyramidal tip. In this case, if it is barely peeled off by the enhanced suction method: 1 J4984 Amendment 1276197 may cause damage to the wafer element. The present invention is in view of the above problems, and even if it is adsorbed, it may cause damage and cause strong damage. And the picking method using the tip. SUMMARY OF THE INVENTION The purpose of the researcher is to provide a thin wafer element of a shape, and it is not necessary to make a tip that can be adsorbed and picked up, and the inventor of the present invention first tries to peel off the end of the wafer element, and the trial is as in the 12th. The rubber tip of the recess H) in which the tip 1 is to be decompressed by the tip 1 is formed to have a size near the end of the wafer member 3 (the distance d from the outer periphery of the wafer member 3 is 0.3 匪 or less) to pick up the wafer member. 3. However, in the case where the tip 1 is used, the vicinity of the center portion of the gusset element 3 is easily deformed (bent) and raised, and the above problem cannot be solved. As a result of intensive studies by the inventors of the present invention, a tip having a projection in which the projection is brought into surface contact with the wafer member 3 of the abutting recess 10 has been developed to complete the present invention having the following features. (1) a type of tip 'having a recess for abutting a square surface of the wafer element - decompressing the inside of the recess under abutting contact, thereby adsorbing and picking up the wafer element 'where' is disposed in the recess There is a protrusion that rises from the inner side surface of the recess and/or the inner surface of the inner P, and the protrusion is in contact with the wafer element plate surface of the abutting recess. (2) The tip of (1) above, wherein the thickness of the side wall of the concave portion is formed, and the thinnest portion is 〇 3 mm or less. (1) The tip of (1) or (2) above, wherein the protrusion is protruded from the upper side of the upper surface and is ridged with the surface of the wafer element of the abutting recess. 4984 Correction 7 1276197 contact. (4) The tip of (1) or (2) above, wherein the protrusion is from the inside. The bottom of the dog is out of the dog and is not in contact with the internal side. (5) The tip of (1) or (2), wherein the protrusion contacts the wafer element plate surface 纟, the concave portion abuts the surface of the wafer element in a ridge shape. (4) The above-mentioned (1) or (2), wherein the plurality of mutually independent protrusions are provided in the recess, and the protrusions are in contact with the wafer element board in a contact area of 〇〇1 to 50 mm2, respectively. . (7) The tip of (1) or (2), wherein the protrusion is made of porous rubber. a (8) The tip of any of the above items (1) to (7), wherein the side wall formed by the above: two is composed of a natural rubber or a synthetic rubber. / # (9) The method of adsorbing and picking up the wafer (4) is such that the concave portion of the above (1) to (8) 曰::: abuts against the wafer element, so that at least one outer circumference of the 要2 is to be adsorbed The distance between the edge and the opening edge of the concave portion is 0.001 to 0.3 mm. (1 0) - The method of adsorbing and absorbing the "the method of the object" is to make the concave portion of the tip of the above (1) to (...) abut the wafer The component is such that the ratio of the area of the opening of the protrusion to the area of the wafer element to be adsorbed is 70 to 99.99%. [Embodiment] The following is a detailed description of the present invention. Fig. 1 is a schematic view of a sieving screen, a moon and a head of the present invention, and Fig. 1(A) is a view showing a bottom surface (a surface in contact with the wafer element 3) of the tip 1276197 of the tip i 314984, Fig. (8) is a view of the tip 1 as seen from the side. The broken line in the first figure (B) and each of the following figures is the external structure seen from the outside: the state in which the concave portion is in contact with one of the wafer elements. Lower 'vacuum guide from the side of the tip adapter 2 via the suction hole 21' can reduce the recess 10 The wafer element 3 is adsorbed. Here, the concave sound M 〇 of the tip is such that the member constituting the tip 1 (for example, the side wall ln and the square surface of the semiconductor wafer 3 form a space capable of maintaining the reduced state. In addition, as long as the reduced pressure state can be maintained, a member such as a matte rubber can be embedded in the space (see the aspect of Fig. 7 to be described later). The suction head of the present invention is provided in the recess 10 from the recess. The inner side surface (9) and/or the inner bottom surface 102 of the canine raised body 12' and the protrusion 12 is in surface contact with the wafer element 3 abutting on the four: 10. In the present specification, the tip of the tip is concave. 9 The inner side of the inner surface · The inner part of ii is called the inner side from 1 〇1, and the inner surface of the second side is called the inner bottom surface 1〇2 (refer to Fig. 7 (7))). The second drawing is the suction using the present invention. The head i adsorbs and picks up the wafer element 3: a step pattern. Since the tip of the present invention has the protrusion n, the wafer element 3 is not easily deformed toward the inside of the recess 1 ,, and the wafer element 3 can be kept flat as long as it is as long as In this way, even a thin wafer component 3 can be combined with a thick wafer component. 3 A sufficient peeling angle is obtained between the wafer element 3 and the surface of the adhesive sheet 4, so that the pick-up can be stably performed. The wafer component to be picked up by the present moon is required to be used in the manufacture of an electronic electronic device. The element and the member to be picked up by adsorption can be 'uniquely limited in kind and shape. Since the tip of the present invention can pick up a thin wafer component which is difficult to pick up by a conventional tip, and can also maintain the 314984 revision 9 1276197 1叮 70 pieces of good condition, so regardless of the thickness of the wafer component «Applicable. Too thin " * 'The so-called thin wafer component means that the wafer component is below 15:_ (preferably 15 to 75_). For the above-mentioned picking step, it is preferable to first make the 10 of the tip 1 abut the U-chip #3 surface and adsorb the wafer 3, and then use the top or the Japanese special _1- The mechanism described in U8862 (that is, =: the ejector pin 5 is used to lift the adhesive sheet up, but the adhesive sheet is lowered: no, the line is picked up) but the adsorption and utilization of the suction head can also be used:: = In the state in which the wafer member 3 is ejected by the ejector pin 5, and the head 1 is crimped to the wafer device 3', The rubber dolphins and the adsorption generated by the pressure hold the wafer element 3 in the suction head and then pick up the wafer element 3 in a flat shape by pulling up 。. ΪInventing the thickness of the side wall 11 of the suction head 1 (Fig. 1 (8) The distance D): the binding portion is preferably 0.3 mm or less, preferably 〇〇5 to 〇1_.: the thinner the thickness of the side wall 11, the more the contact between the tip and the adjacent wafer is prevented, and the gray is : It is attached to the vicinity of the end of the wafer, so it is easier to adsorb the wafer element, but on the other hand, in order to prevent the vacuum from being used poorly, it is preferable to use a thicker side wall. Moreover, in order to prevent steep contact with adjacent wafers and to reduce the working space when the wafer is bonded, the thickest portion of the thickness of the side wall u of the tip is preferably 〇4 to 2 mm. The material of 1 (especially the material of the side wall 11) does not have (4) (4) 疋 'But: θ 曰 piece: piece; the unevenness of the unevenness of the plate surface is good, it seems that the natural rubber used in the above-mentioned white rubber and the head Or rubber such as synthetic rubber 314984 Amendment 10 1276197 Glue hardness JIS-Α (according to jiS K6253) g 7 is suitable. .,, under the arm of the rubber-like elastomer can be added to the anti-static material An additive such as an ozone aging agent or a softener. The 'electrosurgical knife' and the tip 1 of the present invention are characterized in that each of the concave protrusions 12 has a shovel-like shovel described later, and the large-sized limbs 12 have various secrets. The presence of Η 凡 凡 凡 凡 凡 凡 凡 凡 凡 凡 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 to to to to to to to to to to to to to to to to to to to to to to to to to to An example of a tip, and Fig. 3 (4) is a & face of the tip (connected to the daypiece element 3) "Concubine contact surfaces) of FIG, I-Ι sectional view of the graph of FIG. 3 -. The tip shown in the picture! In the recess 1A, there is a projection 12 projecting from the recess. The protrusions 12 may be provided so that at least the suction: 柃 can be brought into contact with the wafer elements together with the side walls u. Preferably, the protrusions 12 are disposed at a distance from the lowermost side of the side wall ( (the knives that are in contact with the wafer element 3) to _300 watts to +3 〇〇 _. (Refer to Fig. 3 (8)), the position to be set in the range, and the push at the time of picking up (the large body 12 can be easily brought into contact with the wafer element 3). Here, when the distance c is the timing table 7, the protrusion 12 protrudes from the side wall η (this aspect is not shown), and the distance c is negative, and the body 12 is recessed than the side wall 11 (Fig. 3 (Β) Aspect). The material of the large lifter 12 is not particularly limited, and may be, for example, the same material as the side wall 11 or plastic, metal or the like. The protrusion 12 itself may also be a porous rubber having gas permeability as will be described later. Other materials, such as glass, ureti, melamine, terracotta, strontium, cellulose, inorganic matter (rock), etc., may also be a composite of these Or a porous body of this type. π 314984 Revision 1276197 When the tip 1 of the present invention is used, 8 疋 causes the recess 10 including the protrusion 12 to abut against the wafer element 3. From the viewpoint of preventing the deformation of the wafer member 3 and the viewpoint of adsorbing and holding the wafer member 3, the area of the protrusion 12 contacting the wafer element 3 is larger than the removal of the protrusion. The ratio of the opening area of the concave portion 1 (i.e., LxW of Fig. 1(A)) at the time of the limb 12 is 疋ο/ η u 取 5% to 90%. However, the protrusion 12 itself has a gas permeable 愔In the case of W h (for example, in the case of a porous rubber), since the wafer element 3 can be adsorbed via the protrusion body itself, the ratio of the aforementioned area (4) can be higher (specifically, 5% to 1 〇). 〇%). In the case of the tip of Fig. 3(A), the recess 1 is separated by the protrusion 12. In this case, it is preferable to provide a vent as shown in Fig. 3(B). Further, by vacuum suction of the suction bow UL 21, all the recessed portions 隔开 are reduced by one or no vent holes are provided, but for example, the suction holes 21 are dispersed in the body of the suction head 1 to reduce the respective recessed portions 10 Pressing, or one or more fine concavities and convexities may be provided on the bottom surface of the protrusion 12 (the portion in contact with the wafer element 3). The portions which are not in contact with the wafer element 3 are formed to reduce the pressure of the recesses ( (both aspects are not shown). The shape of the large body 1 2 is not particularly limited. Several states of the protrusions are shown below. However, the present invention is not limited to these aspects. The above-described suction head 1 of Figs. 1 to 3 is such that the projection j 9 protrudes from the inner side surface 1 〇1 of the concave portion 10 and abuts against The surface of the wafer element 3 of the recessed portion is in a ridge line shape. The protrusion 2 is brought into contact with the wafer element 3 in a ridge shape so that the width of the portion where the protrusion 12 contacts the wafer element 3 is preferably 0.5 mm or less. The angle at which the protrusion 12 protrudes from the inner side surface 101 is 1 to 179° (preferably 1 to 170. More preferably 12,314,984 to 1276197 to 150). The protrusion 12 is made to be cut 12 The cross-sectional shape can be (three S $ 夕 形, 圆形, ellipse, < U on the shape) 疋 些 some of the shapes of the combination. In the aspect, the benefit is only the right empty as μ, in addition, too...疋"There is a structure in which one end of the large body 12 contacts the structure (Fig. 1), or two ones* Ί 4 side 101 Internal side contact (FIG brother 3) can be. The structure of the suction 1 is the number of the dog 12 of the beer 1 and the limitation of the prostitute, and depending on the chip component, there is a special size of the τ J or the wafer element 3 is appropriate. In addition, a suction s, a threshold, and a protrusion 12 in the head 1 also have the protrusion 12 and other protrusions 12 of this aspect. Fig. 4 is an illustration of the bottom surface of the tip 1 of the present invention. The tip projection 12 protrudes from the inner bottom surface 102 and is not in contact with the inner side. The cross-sectional shape of the protrusions 12 may be polygonal or rounded: 1 :: a combination of shapes. Between the protrusion 12 and the side wall u; 2 The interval between the two is not particularly limited, and the rigidity of the member 3 is appropriately selected, but the smaller the pitch, the smaller the amount of deformation of the wafer element 3 at two, which is preferable. Specifically, the interval between (4) θ and the side wall η (the closest portion to each other) is preferably 〇. 2 to 2 Umm' the spacing between adjacent protrusions 12 (the closest portion to each other) is preferably. It is 0.0! to 0.5mm. In addition, the protrusions 1 2 in the tip i can also have the protrusions of the present aspect and other aspects. Fig. 5 is an illustration of the bottom surface of the tip 1 of the present invention. The tip 1 is characterized in that the projections 2 are brought into contact with the plate surface of the wafer element 3, whereby the concave portion 1 is brought into contact with the plate surface of the wafer element 3 to form a ridge line. Here, the fact that the concave portion 10 is formed in a ridge line shape means that the concave portion 10 other than the projection body 1 2 in the bottom surface of the suction head has a ridge line shape (the width is preferably 〇 · 5 m ηι or less). In this case, 314984 Amendment 13 1276197 The protrusion 12 can protrude from the inner side 1〇 or only protrude. The size and shape of the protrusions 12 do not have two bottom faces 102. The shape of the 1 inch is J. The shape of the Fig. can be polygonal, circular, elliptical, etc., but the +, /, the profile is preferably not too large, and it is better to at least in the side wall]::, the depressed recess 10 Place the attraction path for attraction. Further, the recess 10 of the -k can also have the present aspect and other aspects of the protrusion: the protrusion in the body. Fig. 6 is an illustration of the bottom surface of the tip of the present invention. There are a plurality of small protrusions 12 in the same manner. The so-called small, - with each protrusion! 2 is a member which is in contact with the wafer element 3 in a range of 0.01 to 5 Å 2, preferably 〇 至 3 to 2 2 . The plurality of protrusions shown in Fig. 6 can be arranged in a regular lattice shape, but the configuration is not particularly limited. The shape of the protrusions 12 is not particularly limited, and is preferably a cylinder, a polygonal column, a conical trapezoid, a polygonal trapezoidal ridge, a combination of these shapes, or the like. Here, the 'circle includes an expanded circle, and the polygon is triangular or more. Further, the protrusions η in one of the tips i may have the same protrusions as in the present aspect and other aspects. Fig. 7 is a view showing an example of the bottom surface of the tip of the present invention. The tip 12 of the tip is a porous rubber. Here, the "porous rubber" is a Gurley gas permeability measured by JIS L1096 of 〇〇5 to 1 (8) (10) / heart / 100 cc (preferably 〇" to 1 〇〇〇〇 / 1 〇〇 cc ) rubber. In the present invention, the porous rubber 1 having a plurality of fine pores is used as the projections 1 2 to contact the wafer member 3 while decompressing the pores of the porous rubber to promote the adsorption of the wafer member 3. Therefore, in the case of the present aspect, the projections 1 2 can also be distributed throughout the recess 1 of the tip 1. 314984 Amendment No. 14 1276197 The method for producing the tip 1 of the present invention as described above is not particularly limited, and a rubber molding method such as extrusion molding such as injection molding, or the like can be suitably used. Further, as described above, the protrusion 12 is particularly limited in material, and may be formed by a general method such as embedding, adhesive, welding, or the like depending on the material to be used. When the wafer member 3 is adsorbed and picked up by the tip 1 of the present invention, it is preferable that the tip recess 1 to be decompressed reaches the vicinity of the end of the wafer member 3 to be stapled. Specifically, the The distance d (the distance between the outer periphery of the wafer member 3 and the opening edge of the concave portion 10 of the tip 1) is preferably 〇3 mm or less, preferably 0.001 to 0 2 mm. As described above, by attracting the end of the wafer element 3 When the end portion of the wafer element 3 is surely peeled off from the adhesive sheet 4 by the tip 1 of the present invention, especially in the case of a thin wafer element, it is preferable to make most of the wafer element 3 surface and the tip for accurate adsorption! The concave portion 1 〇 abuts. The ratio of the opening area of the concave portion 1 去除 when the protrusion 12 is removed and the surface area of the Β θ sheet element 3 to be adsorbed are preferably 99.99%, preferably _ to 99.5%. "The area of the opening when the protrusion η is removed" is the area of Lx\V in the 帛1 diagram (Α). As described above, the method of using the method of sucking and picking up the wafer element 3 of the present invention can be used to manufacture the (four) ejector pin 5, or the method of the thimble 5 is disclosed in the Japanese Patent Publication No. 2000-201. + A conventional method such as a method of sucking the adhesive sheet 4 downward. In addition, as long as the adhesive sheet 4 having a low angle peeling force and a very low initial elasticity is used, the auxiliary mechanism of the thimble 5 temple can be used, and only the tip can be used! To pick up the wafer component 3. 314984 Amendment 15 1276197 Here, "the low angle peeling force is extremely low" means that the 1 5 ° peeling force measured by the fixed angle peeling force measuring device is 1 · 0 N / ; [0 m or less, the so-called "initial elasticity is extremely low" It means that the initial modulus of elasticity measured by a tensile tester is 20 to 200 MPa. The adhesive sheet 4 having a low angle peeling force and an extremely low initial elasticity is known to have a sheet (including a linear) low-density polyethylene resin or an ethylene-methacrylic copolymer resin, and can be directly used in the market. "Evolue" and "Nucrel" sold on the market. Hereinafter, the present invention will be specifically described by way of Examples and Comparative Examples, but the present invention is not limited by these examples. (First Embodiment) A 100 parts by weight of a rubber material NBR (NitrUe_Butadiene Rubber, nitrile butadiene rubber) is blended with a part by weight of an antistatic agent anthrax (rubber hardness JIS-A is 30), and then injection molded. The method forms the tip 1 of the i-th image. At this time, the outer dimension of the side wall η is 6 8 mm×6 8 mm, and the thickness of the side wall U is 〇.1. The protrusion 12 is in contact with the wafer in a ridge line length of 3 to 4 mm and a width of 〇5 mm. . The side wall Π and the protrusion 12 are formed on the same plane and become the bottom surface of the suction head. Using a wafer bonding machine equipped with the above-mentioned tip 1 to pick up and pick up the skin, it is attached to the crystal cutting tape (ELEP-Holder, UE) as an adhesive sheet 4 (8KGT, n) The electrician (manufactured by the electrician) has a thickness of 50 μm, and the upper surface is 7.0 mm x 7. mm. When picking up, the tip 1 is brought into contact with the middle portion of the wafer element 3, and then the vacuum is sucked through the suction hole 21, and then the four thimbles 5 are used (the slant (the ten giant is 6 · 〇 mm X 6 · 0 mm) 0.5 mm upward is ejected. Therefore, the distance between the outer periphery of the wafer opening member 3 and the concave portion 314984 of the tip 1 to correct the opening edge of the 16 1276197 1 〇 is about 0.2 mm. (Second embodiment) In the manner of Figure 3, the protrusions of the tip 1 are placed, that is, the protrusions 12 are formed parallel to the four inner sides of the recesses 1〇 with a pitch of 0.5 匪. Fig. 3 The pitch of the Β) is q 〇 mm, and three vent holes are provided in each of the protrusions 12. The tip 1 is manufactured in the same manner as in the first embodiment to carry out the pickup of the wafer element 3. (Third embodiment) The protrusions 12 of the tip i are disposed as shown in Fig. 4. That is, from a position of about 0.2 mm from the inner side surface HH, as shown in Fig. 4 at equal intervals: a face width of 0.5 mm and a length of 3 mm The rectangular protrusions 胄Η, the circular protrusions 12 having the axis L- and the long axis of 2_ are manufactured in the manner of the first embodiment to perform picking up of the wafer elements 3. (Fourth Embodiment) The width of the projection 1 of the tip 设置 is set as shown in Fig. 5. One is along the inner side surface 1 〇: two = "the recess i of one to 9.3 _.. Manufacturing the tip], picking up the wafer component 3 by the first embodiment (苐5 example), as shown in Fig. 6, the tip of the tip is disposed away from the inner side 101, about 2. 2 mm, such as 'That is, 'from the ground, the circular protrusion with a section diameter of 〇.3mm is returned to the same way. Then the root (4) is manufactured in the manner of the embodiment to perform the wafer element 314984 correction. (Embodiment 6) As shown in Fig. 7, the protrusions 12 of the tip 丨 are provided. That is, the porous rubber (Sunday Electric Co., Ltd.) Sun MAp Hp, Gesha air permeability is 0.8 seconds. /i00cc). Otherwise, the tip 1' is manufactured in accordance with the embodiment to pick up the wafer element 3. (Seventh embodiment); the thickness of the side wall 11 of the member 1 is set to 0 · 5 mm, and others are according to the The tip 1 is manufactured in the manner of the embodiment to carry out the pickup of the wafer member 3. (Eighth Embodiment) The shape of the member 1 The inch is set to 6 · qm 1Tl x 6 · qmm, and the length of the protrusion 12 is set to 2 to 3 匪, and otherwise the tip 1 is manufactured in accordance with the embodiment to perform pickup of the wafer element 3.' Comparative Example 1) The protrusion 12 is not provided in the recess 10 of the suction system 1 to form a hollow state, and the outer shape of the tip 1 is set to 6.0 x 6.0 mm, and he is based on the first cream. + /, Shell also manufactured the tip j to carry out the wafer element 3 (Comparative Example 2) in the concave state of the tip 1 "others according to the pickup of the j-th sheet element 3. (Evaluation Test) The tip 1 was manufactured by using the embodiment and the ratio of 10 without providing the protrusion 12 to form a hollow embodiment, to perform the tip manufactured in the crystal case, and the wafer 18 314984 was repeatedly subjected to the modification of the 1276197 element. The picking of each "received success rate means that the person then observes its state. The result is shown in the table."" The first embodiment is shown in (number of times of picking success) / (number of times of repetition: 20)
美地拾取 美地拾取 美地拾取 1^美地拾取 瓦__元美地拾取 第2 j施牲 第5實施杜 比較例1 比較例2 2/20 可拾取 離，i k吸頭附脫落Beauty Picking Beauty Picking Beauty Picking 1^ Beauty Picking Tile __元美地拾取 2j Application 5th Implementation Du
IlIIESg™ 如表I所示，只要使用本發明的吸頭及拾取方法 使所要拾取的是簿母】。曰H i π , 曰片兀件’也可抑制因剛性降低所致 的晶片兀件變形，因此可完美地進行拾取。 本申請案是以在曰本提出申請的曰本特願 2〇〇2-245212為基礎，其内容全部包含在本說明書中。 【圖式簡單說明】 第1圖是本發明吸頭的示意圖，第1圖⑷是吸頭底面 (與晶片S件接觸的面）的圖，⑻是從側面觀看吸頭的圖。 第2圖是利用本發明吸頭拾取晶片元件的步驟模式 第 3圖是本發明吸頭的例 示圖弟3圖（Α)是吸頭底 面 314984修正本 19 1276197 圖，第3圖（B)是第3圖（A)的I-Ι線剖視圖。 第4圖至第7圖是本發明吸頭的底面例示圖。 第8圖是半導體晶片拾取步驟模式圖。 第9圖是利用角錐吸頭拾取晶片元件的步驟模式圖。 第1〇圖是習知技術中利用橡膠吸頭時的問題之示意 圖。 第11圖是習知技術中利用角錐吸頭時的問題之示意 圖。 第1 2圖是半導體晶片之拾取步驟的模式圖。 【主要元件符號說明】 1 吸頭 2 吸頭接合器 3 晶片元件 4 黏著片 5 頂針 10 凹部 11 側壁 12 突起體 21 吸引孔 101 内部側面 102 内部底面 20 314984修正本IlIIESgTM is shown in Table I, as long as the tip and the picking method of the present invention are used to make the book to be picked.曰H i π , the cymbal piece ′′ can also suppress the deformation of the wafer due to the reduction in rigidity, so that the pickup can be performed perfectly. The present application is based on the Japanese Patent Application No. 2-2-245212, the entire contents of which are incorporated herein by reference. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a tip of the present invention. Fig. 1 (4) is a view of a bottom surface of a tip (a surface in contact with a wafer S), and (8) is a view of a tip viewed from a side. Fig. 2 is a view showing a step of picking up a wafer component by the tip of the present invention. Fig. 3 is a view showing an example of the tip of the present invention. Fig. 3 is a bottom surface of the tip 314984, and Fig. 19 1276197 is shown. Fig. 3 (B) is Fig. 3 (A) is a cross-sectional view taken along line I-Ι. 4 to 7 are illustrations of the bottom surface of the tip of the present invention. Figure 8 is a schematic view of a semiconductor wafer pickup step. Figure 9 is a schematic view showing the steps of picking up wafer components using a pyramidal tip. Fig. 1 is a schematic view showing a problem in the case of using a rubber tip in the prior art. Fig. 11 is a schematic view showing a problem in the conventional technique in which a pyramidal tip is used. Fig. 12 is a schematic view showing a pickup step of a semiconductor wafer. [Main component symbol description] 1 Tip 2 Tip adapter 3 Chip component 4 Adhesive sheet 5 Thimble 10 Recessed portion 11 Side wall 12 Protrusion 21 Suction hole 101 Internal side 102 Internal bottom surface 20 314984 Amendment