1273661 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種晶片’特別是指一種表面聲波晶 片（Surface Acoustic Wave Chip，SAW Chip)。 【先前技術】 「表面聲波」初期是應用於地震學方面的研究，但由 於缺乏適當且有效率的轉換器，並沒有相關的實際應用。 直到開發出指叉狀換能器，並將之形成在一具壓電性晶體 表面，以産生表面聲波，才使得表面聲波元件（saw Device )成爲主要的電子元件。經過不斷的發展改進，目前 表面萆波元件疋積集成一表面聲波晶片，封裝後應用在例 如手機、無線電話、呼叫器等無線通信終端上，作為濾波 益使用，以提供特定波長的頻率信號通過以渡除其他頻帶 的&頻率信號及/或雜訊。另―方面，表面聲波元件亦可做為 谐振器（Resonator)’以提供特定頻率之穩定振盪信號。 參閱圖卜目前的表面聲波晶片i包含一基材u、一形 成在基材U表面的指又狀換能器⑽㈣㈣， 二τ) 12’及至少—與該指叉狀換能器i2電性連接的連接塾 3圖示中以四連接墊為例說明），經封襄成一如圖2所示 之封裝件2後，即可電性連接 的電路板（圖未干中 機等通信電子產品 信電子產品的通信品質。 ·幵通 基材11 一般是選用具壓 鈮酸鋰、釦酸鋰耸s人 之早日日材枓，例如石英、 鐘4，配合選擇-不具壓電性的電極形成指 1273661 『狀換能1 12,指又狀換能器12具有相間隔之一輸入埠 121與:輸出槔122,且輸入埠121、輸出埠122均呈指又 狀負貝將電信號與纟面聲波信號互相轉換。當輸入埠⑵ 接收電信號後轉換成表面聲波經由㈣U表面向輸出埠 傳遞，再藉由輸出埠122將表面聲波信號轉換成預定頻 輪出，#由基材11卩及指叉狀換能器、12之輸入埠 121與輸出埠122的特殊設計，對較頻寬信號濾、波及/或 對特定頻率產生共振。 連接墊13是供此表面聲波晶片1封裝成封裝件2時， i、電性連接單A 2丨，例如金線或料，電性連接時所用， :可將表面聲波晶4 1處理後的頻率信號向外傳輸，以提 昇通信電子產品的通信品質。 由於表面聲波晶片i的運作原理，是運用基材u與形 成在基材11表面之指叉狀換能器12相互配合以麼電效應^ 式傳送表面聲波，因此需要有感應空腔供其聲波振_變 傳遞，才可以進行預定的頻率信號處理。 因此，上述表面聲波晶片1封裝成封裝件2時，益法 適用目前絕大多數晶片所採用的膠體封I方式，即無法封 裝成如業界所熟知的qFP、Bga等封裝件態樣，而必須採 用如圖2所示之特定的殼式封裝。 、 此Μ料主要是將表面聲波日日日片！封裝於-界定 -感應⑽22並可電性連接於例如通信電子產品的一電 板（圖未示出）的封裝殼23中，表面聲波晶片」容置於 應空腔22中而與外界隔絕，並利用複數電性連接翠元^ 1273661 在此以多數金線為例說明）分別對應地電性連接連接墊13 ί波成23而可藉感應空腔22供表面聲波晶片工振動形 變傳d進行特定的頻率信號處理，經由電性連接單元 21、封裝殼23、電路板向外傳遞處理完成的頻率信號。 眾所週知，電子產品的發展趨勢是愈趨輕薄短小。為 達到此㈣，用於電子產品中的各式電子零組件莫不積極 朝向j、型化、積體化、模組化、系統化研究發展。 然而，由於表面聲波晶P本身作動的需求，並無法 與其他種類的晶片共同採取膠體封裝，或進行裸晶電路板 構裝（Chip on board)的方向研究發展。同時，殼 但材料成本鄉體封裝高昂，並有體積料極限的限制， 亦無法適用於其他種類晶片封裝的需求。因此，如何研究 改善目前的表面聲波晶片’是業界學界努力的方向之一。 【發明内容】 因此’本發明之目的，即在提供一種具有内建式感應 空腔之表面聲波晶片，它可適用目前所有的封裝方式進行 封裝，以供後續電子產品應用。 此外，本發明之另一目的，在提供-種製造具有内建 式感應空腔之表面聲波晶片的製造方法。 於是’本發明為一種具有内建式感應空腔之表面聲波 晶片，是藉一電性連接單元與_基板電性連接，可將一電 信號處理成一預定的頻率信號後，依序經由該電性連接單 元、該基板向外傳遞，該表面聲波晶片包含一基材、一指 叉狀換能器、至少一連接墊，及一罩覆殼。 ^ !273661 該基材具有一表面及一相反於該表面之連結面，該連 結面與該基板相連結。 該感應層指又狀換能器形成於該基材表面，是感應該 頻率信號後將其接收該電信號後轉變換成表面聲波過濾信 號處理’再將過濾處理後的表面聲波信號轉換成該預定的 頻率信號。 每一連接塾形成在該基材表面並與該指叉狀換能器電 性連接，是供該電性連接單元分別電性連接該表面聲波晶 片與該基板。 該罩覆殼自該基材之表面更向上形成，並與該基材之 表面共同界定出一供該指又狀換能器容置且與外界相隔絕 的感應空腔。 此外，本發明製造具有内建式感應空腔之表面聲波晶 片的製造方法，是包含下列步驟。 (a )在一基材表面形成一指叉狀換能器與至少一與該 指叉狀換能器電性連接的連接墊，該指叉狀換能器是接收 電信號後轉換成表面聲波信號處理，再將處理後的表面聲 波信號轉換成預定的頻率信號，該連接墊是在封裝時供一 電性連接單元分別電性連接該表面聲波晶片與—基板時所 用。 (b)自該基材之表面更向上形成一罩覆殼，使該罩覆 成與4基材表面共同界定出_供該感應層指叉狀換能器容 置且與外界相隔絕的感應空腔。 本务明之功效在於提供一種具有内建式感應空腔之表 1273661 面聲波晶片’藉該罩覆殼形成可供指叉狀換能器振動形變 的感應空腔’而可直接進行膠體封裝，進而提高表面聲波 晶片應用的方式。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例的詳細說明中，將可 清楚的呈現。 參閱圖3’本發明具有内建式感應空腔之表面聲波晶片 3的一較佳實施例’是可以膠體封裝方式封裝成如圖4所示 之封裝件4後，電性連接在例如手機等通信電子產品的電 路板（圖未不出）上’而可濾除不需要之頻帶的頻率信號 或提供特定共振頻率之頻率信號，以提昇通信電子產品的 通信品質。該表面聲波晶片3包含一基材31、一指叉狀換 能器32、至少一連接墊33,及一罩覆殼％。 與白知表面聲波晶片1相似，基材3 1具有一表面3 11 及一相反於該表面311供封裝時銲黏（Bonding)用之連結 面312，才曰又狀換能_ 32肖基材才目配合形成於基材μ 表面’具有相間隔之一輸入琿321與-輸出埠322，且輸入 埠321、輸出4 322均形成指又狀，而輸入4 321接收電信 號後將其轉換成表面聲波信號經由基材η表面3ιι向輸^ 琿322傳遞，再藉由輪出彳322將處理 轉換成特定的頻率信號 反“虎 信號再向外輪出，而可以322將此料的頻率 在特定頻率共振。， 慮除其匕不需要頻寬的頻率信號或 1273661 由如述表面聲波晶片3基本作動原理可知，基材31是 由例如石英、銳酸鋰、钽酸鐘、爛酸經、Langasite等具壓 電性之單晶材料，或於非壓電性材料上成長例如氧化鋅、 虱化鋁、PZT等具壓電性之薄膜材料所構成；而指叉狀換 月匕器3 2則疋一不具壓電性的電極。由於基材31與指叉狀 換月匕斋32的相互選擇搭配，必須視表面聲波晶片3的應用 ，例如需傳遞的模態、待處理的信號頻寬範圍等等，再依 基材31的機電耦合係數、介電常數、溫度係數、結晶方向 、成本價格等等來選擇搭配應用，故在此不再多加舉例基 材31可選用的種類與指叉狀換能器32搭配形成之相關模 態。 、 母連接墊33形成在基材31表面311，並與指叉狀換 月匕器32電性連接，在本例及圖示中，是以四連接墊33，且 兩兩相對分別電性連接輸入埠321、輸出埠322的設置為例 來作說明。與f知表面聲波晶片i的連接塾13相似，該四 連接塾33 ；^供後續封裝時電性連接單元42 (例如金線或紹 線）为別電性連接時所用，而可將表面聲波晶片3過濾之 預定頻寬或特定共振頻率的電信號向外傳輸，以提昇通信 電子產品的通信品質。 /罩覆< 34包含一自基材31表面311向上形成的周壁 341 ’及一連結周壁341頂緣的頂壁342，周壁以1、頂壁 ”基材31表面311共同界定出一將指又狀換能器32限 制其中而與外界相隔絕的感應空月空35，且頂壁342與指又 狀換能器32相間隔一預定距離。 10 1273661 上述本發明具有感應空腔之表面聲波晶片3,由於本身 已由罩覆殼34與基材31表面311界定出感應空腔35，而 可供界限於内的指叉狀換能器32與部份基材31有足夠的 空間相互配合以聲波振動方式傳送表面聲波，以產生預定 頻寬的頻率信號或進行特定頻率共振的頻率信號，所以可 使用任何形式的封裝製程進行封裝。 參閱圖4，以目前最多種類晶片所採用的膠體封裝為例 ，上述本發明具有感應空腔之表面聲波晶片3，可與一般晶 片一樣，直接以連結面312連結在導線架（Lead_frame) 41 (當然，導線架41也可以簡單替換成印刷電路板（pcB)， 由於此部分並非本發明重點所在，在此不多加詳述），並以 多數電性連接單元42 (在此以多數金線為例說明）分別對 應電性連接連接墊33與導線架41的電性接腳（Lead) 43 之後，即可以封裝膠體（M〇lding c〇mp〇und) 44直接將本 發明具有感應空腔之表面聲波晶片3、電性連接單元42、 導線罙41的部份結構等包覆而與外界隔絕，完成一封裝有 本發明具有感應空腔之表面聲波晶片3的封裝件4。 再將完成之封裝件4,以外露之電性接腳43與例如通 信電子產品的電路板（圖未示出）相互電性連接之後，即 可藉此具有感應空腔之表面聲波晶片3處理完成的預定頻 寬或頻率的頻率信號，經由電性連接單元42、電性接腳Μ 、電路板向外傳遞應用，進而達到提昇通信電子產品通信 品質的目的。 參閱圖5 ’上述本發明具有感應空腔之表面聲波晶片3 1273661 是以如圖5所示的製造方法所製成。在此要特別加以說明 的是’下列說明是以形成單一具有内建式感應空腔之表面 聲波晶片3為例說明，熟知此項技藝人士皆知，事實上晶 片之製造過程都是t晶圓上冑成多數晶片，純切割後才 完成單-晶片的製備，而由於其中過程均類似且為業界所 周知，故於以下說明中不再加以區分。 首先進行步驟51’與習知表面聲波晶片的製造過程相 似，應用晶圓清洗Μ金屬薄膜0上光阻φ顯影心心去 光阻’或者晶圓清洗Θ上光阻Θ顯影〇鍵金屬薄膜Θ舉離鲁 (Lift off)等半導體製程’在基材31上形成指叉狀換能器η 與連接塾33。由於此過程為業界所熟知，在此不再多加贅 述。 接者進行步驟52，在形成有指又狀換能器32與連接墊 33的基材3丨上貼覆一化學乾膜（Dry fUm)，例如：光阻 (=to⑽叫、環氧樹脂（Ep〇xy)、聚亞酿胺(p〇iyimi岭 苯環丁烯咖㈣咖—⑽，BCB)、或壓克力。此化學乾BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer, particularly to a surface acoustic wave chip (SAW Chip). [Prior Art] "Surface Acoustic Wave" was originally applied to seismology research, but there is no practical application due to the lack of proper and efficient converters. Until the development of the interdigitated transducer and its formation on a piezoelectric crystal surface to generate surface acoustic waves, the surface acoustic wave component (saw Device) became the main electronic component. After continuous development and improvement, the surface chopping component is currently integrated into a surface acoustic wave chip, which is packaged and applied to wireless communication terminals such as mobile phones, wireless telephones, and pagers, and used as a filter to provide a specific wavelength frequency signal. To eliminate & frequency signals and/or noise in other frequency bands. On the other hand, the surface acoustic wave element can also function as a resonator to provide a stable oscillation signal of a specific frequency. Referring to the present invention, the surface acoustic wave wafer i comprises a substrate u, a finger-like transducer (10) (four) (four) formed on the surface of the substrate U, two τ) 12' and at least - electrically connected to the interdigitated transducer i2 The connection port 塾3 is illustrated by a four-connected pad as an example. After being sealed into a package 2 as shown in FIG. 2, the circuit board can be electrically connected (the communication electronic product such as the dry machine) The communication quality of the electronic products. · The base material of the 11 11 11 is generally selected from the equipment of lithium niobate, lithium sulphate, and the early days of the sputum, such as quartz, clock 4, with the choice of - non-piezoelectric electrode formation Refers to 1273661 "Transformation 1 12", which means that the transducer 12 has a phase input 埠121 and an output 槔122, and the input 埠121 and the output 埠122 are both pointed and negatively charged to the electrical signal. The surface acoustic wave signals are mutually converted. When the input 埠(2) receives the electric signal, the surface acoustic wave is converted to the output 埠 via the (4) U surface, and the surface acoustic wave signal is converted into the predetermined frequency wheel by the output 埠122, ## Special design of the interdigitated transducer, 12 input 埠121 and output 埠122, For the wider bandwidth signal filtering, wave and/or resonance to a specific frequency. The connection pad 13 is for the surface acoustic wave chip 1 to be packaged into the package 2, i, electrically connected to a single A 2 丨, such as gold wire or material, electricity Used for sexual connection: The frequency signal of the surface acoustic crystal 4 1 can be transmitted outward to improve the communication quality of the communication electronic product. Since the operation principle of the surface acoustic wave wafer i is to use the substrate u and form on the substrate The surface-forked transducers 12 of the surface cooperate with each other to transmit surface acoustic waves, so that an induction cavity is required for the acoustic wave-transfer transmission, so that predetermined frequency signal processing can be performed. When the chip 1 is packaged into the package 2, the method is applicable to the colloidal sealing method adopted by most of the current wafers, that is, it cannot be packaged into the package parts such as qFP and Bga which are well known in the industry, and must be as shown in FIG. 2 The specific shell package is shown. The material is mainly for encapsulating the surface acoustic wave day and night film! - defining - sensing (10) 22 and electrically connecting to an electric board (not shown) such as a communication electronic product. Package In the 23rd, the surface acoustic wave wafer is accommodated in the cavity 22 and is isolated from the outside, and is electrically connected to the external element by using a plurality of electrical connections (Cuiyuan ^ 1273661). The wave 23 can be used to perform specific frequency signal processing by the surface acoustic wave wafer worker vibrating deformation through the induction cavity 22, and the processed frequency signal is transmitted outward through the electrical connection unit 21, the package shell 23, and the circuit board. As we all know, the development trend of electronic products is becoming thinner and lighter. In order to achieve this (4), all kinds of electronic components used in electronic products are not actively developing towards j, type, integrated, modular, and systematic research. However, due to the demand for the surface acoustic crystal P itself, it is impossible to adopt a colloidal package together with other types of wafers, or to conduct research on the direction of the chip on board. At the same time, the shell material cost is high in the domestic packaging and has the limitation of the volume material. It is also not suitable for other types of chip packaging. Therefore, how to study and improve the current surface acoustic wave chip is one of the directions of the industry's academic efforts. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a surface acoustic wave wafer having a built-in sensing cavity that can be packaged for all current packaging methods for subsequent electronic product applications. Further, another object of the present invention is to provide a method of fabricating a surface acoustic wave wafer having a built-in sensing cavity. Thus, the present invention is a surface acoustic wave chip having a built-in induction cavity electrically connected to a substrate by an electrical connection unit, which can process an electrical signal into a predetermined frequency signal and sequentially pass the electricity. The connecting unit and the substrate are outwardly transmitted. The surface acoustic wave chip comprises a substrate, a finger-shaped transducer, at least one connecting pad, and a cover. ^ !273661 The substrate has a surface and a joining surface opposite to the surface, the joining surface being joined to the substrate. The sensing layer is formed on the surface of the substrate, and after sensing the frequency signal, it receives the electrical signal and then converts it into a surface acoustic wave filtering signal processing, and then converts the surface acoustic wave signal after filtering into The predetermined frequency signal. Each of the connection ports is formed on the surface of the substrate and electrically connected to the interdigital transducer, and the electrical connection unit is electrically connected to the surface acoustic wave film and the substrate, respectively. The cover is formed upwardly from the surface of the substrate and together with the surface of the substrate defines an induction cavity for the finger-like transducer to be received and isolated from the outside. Further, the method of manufacturing a surface acoustic wave wafer having a built-in induction cavity of the present invention comprises the following steps. (a) forming a finger-like transducer on a surface of the substrate and at least one connection pad electrically connected to the interdigitated transducer, the interdigital transducer converting to a surface acoustic wave after receiving an electrical signal The signal processing converts the processed surface acoustic wave signal into a predetermined frequency signal, and the connection pad is used when an electrical connection unit is electrically connected to the surface acoustic wave wafer and the substrate respectively during packaging. (b) forming a cover from the surface of the substrate upwardly, so that the cover is combined with the surface of the 4 substrate to define an induction for the sensing layer of the interdigital transducer and is isolated from the outside Cavity. The effect of the present invention is to provide a surface acoustic wave wafer with a built-in induction cavity, which can be directly encapsulated by a cover cavity that forms a sensing cavity for the vibration deformation of the interdigitated transducer. Improve the way surface acoustic wave wafer applications. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to FIG. 3, a preferred embodiment of the surface acoustic wave chip 3 of the present invention having a built-in sensing cavity is packaged into a package 4 as shown in FIG. 4 in a colloidal package, and is electrically connected to, for example, a mobile phone. The circuit board of the communication electronic product (not shown) can filter the frequency signal of the unnecessary frequency band or provide the frequency signal of the specific resonance frequency to improve the communication quality of the communication electronic product. The surface acoustic wave wafer 3 comprises a substrate 31, an interdigitated transducer 32, at least one connection pad 33, and a cover shell %. Similar to the white surface acoustic wave wafer 1, the substrate 31 has a surface 3 11 and a bonding surface 312 for bonding to the surface 311 for packaging, and the shape of the substrate is changed. The matching is formed on the surface of the substrate μ' having one input 珲321 and the output 埠322, and the input 埠321 and the output 4322 are both formed into a shape, and the input 4321 receives the electrical signal and converts it into a surface acoustic wave. The signal is transmitted to the input port 322 via the surface η of the substrate η, and the process is converted into a specific frequency signal by the wheel 彳 322. The tiger signal is turned out again, and the frequency of the material can be resonated at a specific frequency. Considering the frequency signal that does not require bandwidth or 1273661, it can be known from the basic operation principle of the surface acoustic wave wafer 3 that the substrate 31 is made of, for example, quartz, lithium niobate, citric acid clock, rotten acid, and Langasite. a piezoelectric single crystal material, or a piezoelectric material such as zinc oxide, aluminum telluride or PZT grown on a non-piezoelectric material; and a fork-shaped moon-changing device 3 2 Electrode without piezoelectricity due to substrate 31 and interdigitated The mutual selection of the shape of the moon 匕 匕 32 32 must be based on the application of the surface acoustic wave chip 3, such as the mode to be transmitted, the bandwidth of the signal to be processed, etc., and then the electromechanical coupling coefficient and dielectric constant of the substrate 31. The temperature coefficient, the crystallization direction, the cost price, and the like are selected to match the application. Therefore, the modalities formed by the combination of the type of the substrate 31 and the interdigitated transducer 32 are not further exemplified herein. The surface 311 of the substrate 31 is formed and electrically connected to the interdigitated moon-changing device 32. In this example and the figure, the four connection pads 33 are electrically connected to the input port 321 and the outputs. The setting of 埠322 is taken as an example. Similar to the connection 塾13 of the surface acoustic wave chip i, the four connection ports 33 are provided for the subsequent packaging, and the electrical connection unit 42 (such as gold wire or shovel line) is electrically charged. For the purpose of the connection, the electrical signal of the predetermined bandwidth or the specific resonance frequency filtered by the surface acoustic wave chip 3 can be transmitted outward to improve the communication quality of the communication electronic product. / Covering < 34 includes a surface from the substrate 31 311 'upwardly formed peripheral wall 341' And a top wall 342 connecting the top edge of the peripheral wall 341, the peripheral wall 1 and the top wall "substrate 31 surface 311 together define a sensing hollow space 35 which is sealed by the finger-like transducer 32 and is isolated from the outside. And the top wall 342 is spaced apart from the finger-like transducer 32 by a predetermined distance. 10 1273661 The above-described surface acoustic wave wafer 3 having an induction cavity, which has an induction cavity 35 defined by the cover shell 34 and the surface 311 of the substrate 31, is available for the inner interdigitated transducer 32. The partial substrate 31 has sufficient space to cooperate to transmit the surface acoustic wave in a sonic vibration manner to generate a frequency signal of a predetermined bandwidth or a frequency signal for resonance of a specific frequency, so that the package can be packaged using any form of packaging process. Referring to FIG. 4, taking the colloidal package used in the current most types of wafers as an example, the surface acoustic wave wafer 3 of the present invention having the induction cavity can be directly connected to the lead frame (Lead_frame) 41 by the joint surface 312 like the general wafer. Of course, the lead frame 41 can also be simply replaced with a printed circuit board (pcB), since this part is not the focus of the present invention, which will not be described in detail here, and is connected by a plurality of electrical connecting units 42 (here, most gold wires are used) For example, after the electrical connection pads 33 and the lead pins 43 of the lead frame 41 are electrically connected, the colloid can be directly encapsulated. The surface acoustic wave wafer 3, the electrical connection unit 42, the partial structure of the lead wire 41, and the like are covered to be isolated from the outside, and a package 4 incorporating the surface acoustic wave wafer 3 having the induction cavity of the present invention is completed. After the completed package 4 and the exposed electrical pins 43 are electrically connected to a circuit board (not shown) such as a communication electronic product, the surface acoustic wave wafer 3 having the sensing cavity can be processed. The completed frequency signal of the predetermined bandwidth or frequency is transmitted to the outside through the electrical connection unit 42, the electrical pin, and the circuit board, thereby achieving the purpose of improving the communication quality of the communication electronic product. Referring to Fig. 5', the surface acoustic wave wafer 3 1273661 of the present invention having an induction cavity is fabricated by the manufacturing method shown in FIG. In particular, the following description is based on the description of a single surface acoustic wave wafer 3 having a built-in sensing cavity. As is well known to those skilled in the art, in fact, the wafer fabrication process is t wafer. The upper wafer is formed into a plurality of wafers, and the preparation of the single wafer is completed after the pure cutting, and since the processes are similar and well known in the art, no further distinction is made in the following description. First, step 51' is similar to the manufacturing process of the conventional surface acoustic wave wafer, and the wafer is cleaned on the metal film 0, the photoresist is developed, the core is removed to the photoresist, or the wafer is cleaned, the photoresist is cured, and the metal film is lifted. The interdigitated transducer η and the connection port 33 are formed on the substrate 31 by a semiconductor process such as Lift off. Since this process is well known in the industry, it will not be repeated here. In step 52, a chemical dry film (Dry fUm) is attached to the substrate 3 on which the finger-like transducer 32 and the connection pad 33 are formed, for example, photoresist (=to(10), epoxy resin ( Ep〇xy), polyamidamine (p〇iyimiling benzocyclobutene coffee (four) coffee-(10), BCB), or acrylic.
膜之膜厚大於指又狀換能器32之厚度。 然後進行步驟53，以絲刻製程（Lithography)，使《 存之化學乾膜形成一連接塾自基材31表面向上之「口」号 周壁34卜周| 341將指又狀換能器32環圍其中，且連屋 墊33裸露於周壁341之外。由於化學乾膜之膜厚大於指； 狀換能器32之厚度’因此周壁⑷頂面高於指叉狀換能; 32表面。 最後進行步驟54 選用另一同型化學乾膜貼覆於已完 12 1273661 成周壁341的基材31頂面形成頂壁342，使頂壁342、周 壁341相配合形成罩覆殼34,而完成本發明具有内建式感 應空腔之表面聲波晶片3的製造。 上述製造方法主要是利用光蝕刻與乾膜成型之製程， 較習知表面聲波晶片i之製程多增加一道微細加工製程， 以感光性乾膜形成罩覆殼34，當然，也可以利用電鍍、蒸 鍍等等技術，配合其他材料的選用而形成罩覆殼34，由於 此部份的材料與製程搭配替換種類繁多，在此不再一一舉 例說明。 由上述說明可知，本發明主要是應用例如光蝕刻與乾 膜成型製程，在形成有指又狀換能器32與連接墊33的基 材31上，再形成一可將指又狀換能器32限制於内而盥^卜 界隔絕的罩覆殼34,藉由罩覆殼34的保護，以及共同與基 材31界定出供指又狀換能器32與部份基材η可振動形變 ^遞表面聲波的感應^5,而可使本發明具有内建式感 工腔之表面聲波晶片3不但可與習知表面聲波晶片1二 可以適用咸式封裝，更可適用目前絕大 用的膠體封裝造耔私壯 壬曰日乃所才木 Μ曰而可以與其他種類的晶片共同往 片的方向研究發展，同時，因有較多的封裝形式可 二：：可以有效降低材料成本，還可以避免後續封 =特有·式封裝進行《，確實㈣本發明之目The film thickness of the film is greater than the thickness of the transducer 32. Then, step 53 is performed to perform a Lithography process, so that the deposited chemical dry film forms a connection port from the surface of the substrate 31 to the "mouth" peripheral wall 34 week | 341 will refer to the reverberative transducer 32 ring There is a surrounding area, and the floor mat 33 is exposed outside the peripheral wall 341. Since the film thickness of the chemical dry film is larger than the thickness of the finger transducer 32, the top surface of the peripheral wall (4) is higher than the finger-like transducer; 32 surface. Finally, step 54 is performed by attaching another chemical vapor film of the same type to the top surface of the substrate 31 of the finished wall 341 to form a top wall 342, so that the top wall 342 and the peripheral wall 341 are matched to form a cover shell 34, and the present invention is completed. The manufacture of a surface acoustic wave wafer 3 having a built-in sensing cavity is invented. The above manufacturing method mainly utilizes a process of photo-etching and dry film forming, and a micro-machining process is added to the process of the surface acoustic wave wafer i, and the cover film 34 is formed by a photosensitive dry film. Of course, electroplating and steaming can also be utilized. Plating and other techniques, combined with the selection of other materials to form the cover shell 34, because this part of the material and process replacement with a wide variety, will not be exemplified here. As can be seen from the above description, the present invention mainly uses, for example, a photolithography and dry film forming process to form a finger-like transducer on the substrate 31 on which the finger-like transducer 32 and the connection pad 33 are formed. 32 is limited to the inside and the cover of the cover 34, protected by the cover shell 34, and commonly defined with the substrate 31 for the finger-like transducer 32 and part of the substrate η can be vibrated and deformed ^Induction of the surface acoustic wave ^5, the surface acoustic wave chip 3 having the built-in sensing cavity of the present invention can be applied not only to the conventional surface acoustic wave chip 1 but also to the salty package, and is more applicable to the current use. Colloidal packaging is a sturdy and sturdy day. It can be researched and developed in the direction of other types of wafers. At the same time, because there are more packages, it can be used to reduce material costs. It can be avoided that the subsequent seal = unique package is carried out, and indeed (four) the purpose of the present invention
惟以上所述者， 以此限定本發明實 僅為本發明之較佳實施例而已，當不 施之範圍’即大凡依本發明中請專利 13 ^73661 範圍及發明說明内容所作之簡單的等效變化與 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一習知表面聲波晶片的立體圖， 圖2是一侧視圖，說明圖1之表面聲波晶片以殼式封 裝封裝成一封裝件之態樣； 圖3是-側視圖，說明本發明具有内建式感應空腔之 表面聲波晶片的一較佳實施例； 圖4是一側視圖，說明圖3本發明具有内建式感應空 腔之表面聲波晶片以膠體封裝封裝成—封裝件之態樣；及 圖5是一流程圖，說明圖1 兄月圓3本發明具有内建式感應空 腔之表面聲波晶片的製造過程。 14 1273661 【主要元件符號說明】 1 ···· *表面奪波日日片 322 ·· 輸出埠 11*·* -基材 33·… 連接墊 12·.· •指叉狀換能器 34 — 罩覆殼 121 · •輸入埠 341 - 周壁 122. •輸出埠 342 - 頂壁 13··. •連接墊 35·… 感應空腔 2 ·… …封裝件 4 ·.··· 封裝件 21·· ••電性連接單元 41 .… 導線架 22… ••感應空腔 42.··· 電性連接單元 23.· ••封裝殼 43···· 電性接腳 3… ••表面聲波晶片 44···. 封裝膠體 31.· ••基材 51···· 步驟 311 ••表面 52··.· 步驟 312 ••連結面 53···· 步驟 32·· ••指叉狀換能器 54·… 步驟 321 ••輸入埠However, the above description of the present invention is merely a preferred embodiment of the present invention, and the scope of the invention is not limited to the scope of the invention, and the scope of the invention and the description of the invention are simple. The effect is within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a conventional surface acoustic wave wafer, and FIG. 2 is a side view showing the surface acoustic wave wafer of FIG. 1 in a package in a shell package; FIG. 3 is a side view. A preferred embodiment of a surface acoustic wave wafer having a built-in sensing cavity of the present invention; FIG. 4 is a side view showing the surface acoustic wave wafer of the present invention having a built-in sensing cavity encapsulated in a colloidal package. - the aspect of the package; and FIG. 5 is a flow chart illustrating the manufacturing process of the surface acoustic wave wafer having the built-in induction cavity of the present invention. 14 1273661 [Description of main component symbols] 1 ···· *Surface wave grabbing day 322 ·· Output 埠11*·* - Substrate 33·... Connecting pad 12··· • Finger-shaped transducer 34 — Cover cover 121 · • Input 埠 341 - Peripheral wall 122. • Output 埠 342 - Top wall 13 · ·. Connection pad 35 ·... Induction cavity 2 · Package 4 ····· Package 21·· ••Electrical connection unit 41.... Lead frame 22...••Induction cavity 42.··· Electrical connection unit 23.·•• Enclosure 43···· Electrical pin 3... ••Sound acoustic wave chip 44···. Encapsulation 31.·••Substrate 51···· Step 311 •• Surface 52···· Step 312 •• Connection surface 53···· Step 32··•• Energy 54·... Step 321 ••Input埠
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