TWI268620B - Thin film transistor (TFT) and manufacturing method thereof - Google Patents
Thin film transistor (TFT) and manufacturing method thereofInfo
- Publication number
- TWI268620B TWI268620B TW094142717A TW94142717A TWI268620B TW I268620 B TWI268620 B TW I268620B TW 094142717 A TW094142717 A TW 094142717A TW 94142717 A TW94142717 A TW 94142717A TW I268620 B TWI268620 B TW I268620B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gate
- disposed
- tft
- thin film
- Prior art date
Links
Landscapes
- Thin Film Transistor (AREA)
Abstract
A thin film transistor (TFT) and a manufacturing method thereof are provided. The TFT includes a gate, an insulation layer, a channel layer, an etch stopper layer, an ohmic contact layer, a source and a drain. The gate is disposed on a substrate. The insulation layer is disposed above the substrate and covers the gate. The channel layer is disposed on partly of the insulation layer and correspondingly to the gate. The width of the channel layer is smaller than or equals to that of the gate. The etch stopper layer is disposed on partly of the channel layer and correspondingly to the gate. The width of the etch stopper layer is smaller than that of the channel layer. The ohmic contact layer is disposed on partly of the insulation layer, and covers two ends of the etch stopper layer and two ends of the channel layer. The source and the drain are disposed on the ohmic contact layer and correspondingly coupled to the two ends of the channel layer via the ohmic contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094142717A TWI268620B (en) | 2005-12-01 | 2005-12-01 | Thin film transistor (TFT) and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094142717A TWI268620B (en) | 2005-12-01 | 2005-12-01 | Thin film transistor (TFT) and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI268620B true TWI268620B (en) | 2006-12-11 |
| TW200723534A TW200723534A (en) | 2007-06-16 |
Family
ID=57912270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094142717A TWI268620B (en) | 2005-12-01 | 2005-12-01 | Thin film transistor (TFT) and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI268620B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7981708B1 (en) | 2010-07-16 | 2011-07-19 | Au Optronics Corporation | Method of fabricating pixel structure and method of fabricating organic light emitting device |
| US8501552B2 (en) | 2011-11-16 | 2013-08-06 | Chunghwa Picture Tubes, Ltd. | Pixel structure and method of fabricating the same |
-
2005
- 2005-12-01 TW TW094142717A patent/TWI268620B/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7981708B1 (en) | 2010-07-16 | 2011-07-19 | Au Optronics Corporation | Method of fabricating pixel structure and method of fabricating organic light emitting device |
| US8501552B2 (en) | 2011-11-16 | 2013-08-06 | Chunghwa Picture Tubes, Ltd. | Pixel structure and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200723534A (en) | 2007-06-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |