TWI268613B - Method of manufacturing a thin film transistor - Google Patents

Method of manufacturing a thin film transistor

Info

Publication number
TWI268613B
TWI268613B TW091134631A TW91134631A TWI268613B TW I268613 B TWI268613 B TW I268613B TW 091134631 A TW091134631 A TW 091134631A TW 91134631 A TW91134631 A TW 91134631A TW I268613 B TWI268613 B TW I268613B
Authority
TW
Taiwan
Prior art keywords
manufacturing
active layer
semiconductor layer
tft
laser
Prior art date
Application number
TW091134631A
Other languages
Chinese (zh)
Other versions
TW200300611A (en
Inventor
Yoshifumi Tanada
Kazuya Nakajima
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200300611A publication Critical patent/TW200300611A/en
Application granted granted Critical
Publication of TWI268613B publication Critical patent/TWI268613B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

A method of manufacturing a semiconductor device characterized by its high-speed operation and high reliability is provided in which a semiconductor layer crystallized by a CW laser is used for an active layer of a TFT. When a semiconductor layer is crystallized by a CW laser, one part is formed of large crystal grains whereas another part is formed of microcrystals due to the width-wise energy density distribution. The former exhibits excellent electric characteristics. The latter has poor electric characteristics because grain boundaries hinder movement of electric charges, and therefore causes inconveniences when used as an active layer of a transistor. Accordingly, circuits are arranged such that a semiconductor layer formed of large crystal grains is used for the active layer of every TFT.
TW091134631A 2001-11-29 2002-11-28 Method of manufacturing a thin film transistor TWI268613B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001365302 2001-11-29

Publications (2)

Publication Number Publication Date
TW200300611A TW200300611A (en) 2003-06-01
TWI268613B true TWI268613B (en) 2006-12-11

Family

ID=19175343

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091134631A TWI268613B (en) 2001-11-29 2002-11-28 Method of manufacturing a thin film transistor

Country Status (4)

Country Link
US (2) US7078322B2 (en)
KR (1) KR101015181B1 (en)
CN (1) CN100373561C (en)
TW (1) TWI268613B (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI291729B (en) * 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
US20030178682A1 (en) * 2001-12-28 2003-09-25 Takeshi Noda Semiconductor device and method of manufacturing the semiconductor device
JP4030758B2 (en) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3890270B2 (en) * 2002-07-19 2007-03-07 Ｎｅｃ液晶テクノロジー株式会社 Thin film transistor manufacturing method
JP4813743B2 (en) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ Manufacturing method of image display device
JP5046464B2 (en) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor memory element
US7476629B2 (en) * 2003-04-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
US7220627B2 (en) * 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
KR101041066B1 (en) * 2004-02-13 2011-06-13 삼성전자주식회사 Method and apparatus of crystallizing silicon, thin film transistor using the same and method of manufacturing thin film transistor using the same, and display device using the same
CN101677061B (en) 2004-03-26 2013-04-03 株式会社半导体能源研究所 Laser irradiation method and laser irradiation apparatus
US20050237895A1 (en) * 2004-04-23 2005-10-27 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
TWI366218B (en) * 2004-06-01 2012-06-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR101016510B1 (en) * 2004-06-30 2011-02-24 엘지디스플레이 주식회사 Method and apparatus of crystallization
US7902002B2 (en) * 2004-07-30 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8304313B2 (en) * 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
WO2006118312A1 (en) * 2005-05-02 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP4800661B2 (en) * 2005-05-09 2011-10-26 株式会社ディスコ Processing device using laser beam
US20090218577A1 (en) * 2005-08-16 2009-09-03 Im James S High throughput crystallization of thin films
JP2007281420A (en) * 2006-03-13 2007-10-25 Sony Corp Method for crystallizing semiconductor thin film
US20080023703A1 (en) * 2006-07-31 2008-01-31 Randy Hoffman System and method for manufacturing a thin-film device
US20080090396A1 (en) * 2006-10-06 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Light exposure apparatus and method for making semiconductor device formed using the same
US20080142475A1 (en) * 2006-12-15 2008-06-19 Knowles Electronics, Llc Method of creating solid object from a material and apparatus thereof
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN102077318B (en) * 2008-06-26 2013-03-27 株式会社Ihi Method and apparatus for laser annealing
JP5540476B2 (en) * 2008-06-30 2014-07-02 株式会社Ｉｈｉ Laser annealing equipment
TWI464880B (en) * 2008-09-04 2014-12-11 Au Optronics Corp Thin film transistor array substrate and the method for fabricating the same
KR101135537B1 (en) * 2010-07-16 2012-04-13 삼성모바일디스플레이주식회사 Laser irradiation apparatus
WO2013051221A1 (en) 2011-10-03 2013-04-11 パナソニック株式会社 Thin-film element, thin-film element array, and method of manufacturing thin-film element
KR101971556B1 (en) * 2012-10-31 2019-08-13 엘지디스플레이 주식회사 Manufacturing method of flexible display device
KR102324765B1 (en) * 2015-02-09 2021-11-10 삼성디스플레이 주식회사 Organic light emitting diode display and method of manufacturing the same

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0242717A (en) 1988-08-03 1990-02-13 Hitachi Ltd Method of applying energy beam
JP3431041B2 (en) 1993-11-12 2003-07-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TW264575B (en) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
KR100299292B1 (en) * 1993-11-02 2001-12-01 이데이 노부유끼 Polysilicon Thin Film Forming Method and Surface Treatment Apparatus
JPH07302907A (en) 1994-04-28 1995-11-14 A G Technol Kk Active matrix indication element and manufacture thereof
JP3477888B2 (en) 1995-02-07 2003-12-10 ソニー株式会社 Method for manufacturing thin film semiconductor device
JPH07326769A (en) * 1995-05-26 1995-12-12 Asahi Glass Co Ltd Plane display use thin film transistor
TW297138B (en) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
JP3729955B2 (en) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3343492B2 (en) * 1997-04-02 2002-11-11 シャープ株式会社 Method for manufacturing thin film semiconductor device
TW408246B (en) * 1997-09-12 2000-10-11 Sanyo Electric Co Semiconductor device and display device having laser-annealed semiconductor element
EP1049144A4 (en) * 1997-12-17 2006-12-06 Matsushita Electronics Corp Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
JP2000039628A (en) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd Semiconductor display device
KR100296111B1 (en) * 1998-06-09 2001-10-26 구본준, 론 위라하디락사 Method of crystallizing silicon thin film and manufacturing method of thin film transistor using the same
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP4663047B2 (en) 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 Laser irradiation apparatus and method for manufacturing semiconductor device
JP4454720B2 (en) * 1998-07-13 2010-04-21 株式会社半導体エネルギー研究所 Optical lens, beam homogenizer, laser irradiation apparatus, and laser irradiation method
JP2000183358A (en) * 1998-07-17 2000-06-30 Sony Corp Manufacture of thin-film semiconductor device
JP2000111950A (en) * 1998-10-06 2000-04-21 Toshiba Corp Manufacture of polycrystalline silicon
JP2000277450A (en) * 1999-03-24 2000-10-06 Matsushita Electric Ind Co Ltd Laser anneal device and manufacture of thin-film transistor using the same
JP3491571B2 (en) 1999-07-13 2004-01-26 日本電気株式会社 Method of forming semiconductor thin film
JP2001250952A (en) * 2000-03-03 2001-09-14 Seiko Epson Corp Method of manufacturing semiconductor device
JP4986332B2 (en) 2000-03-21 2012-07-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6872607B2 (en) 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
JP2002359376A (en) 2001-03-27 2002-12-13 Semiconductor Energy Lab Co Ltd Semiconductor and its manufacturing method
US7189997B2 (en) * 2001-03-27 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6982194B2 (en) * 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4338937B2 (en) 2001-04-16 2009-10-07 株式会社半導体エネルギー研究所 Semiconductor device
US6740938B2 (en) * 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween
JP4789369B2 (en) 2001-08-08 2011-10-12 株式会社半導体エネルギー研究所 Display device and electronic device

Also Published As

Publication number Publication date
US20030166315A1 (en) 2003-09-04
CN100373561C (en) 2008-03-05
US7517773B2 (en) 2009-04-14
TW200300611A (en) 2003-06-01
CN1421907A (en) 2003-06-04
US7078322B2 (en) 2006-07-18
KR20030044856A (en) 2003-06-09
KR101015181B1 (en) 2011-02-17
US20070015318A1 (en) 2007-01-18

Similar Documents

Publication Publication Date Title
TWI268613B (en) Method of manufacturing a thin film transistor
KR101100999B1 (en) CMOS Thin Film Transistor and fabrication method thereof and Organic Light Emitting Display device using thereof
US9761588B2 (en) Semiconductor device having a wide-gap semiconductor layer in an insulating trench
US7339235B1 (en) Semiconductor device having SOI structure and manufacturing method thereof
KR100945540B1 (en) Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
US8767782B2 (en) Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
KR100952317B1 (en) A semiconductor fabricating apparatus
US8216892B2 (en) Method for manufacturing crystalline semiconductor film
US7563661B2 (en) Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
KR101113370B1 (en) Thin Film Transistor and Organic Light Emitting Display device using thereof
JP4499774B2 (en) Insulated gate type semiconductor device
JP2009152584A (en) Method for manufacturing thin film transistor and organic light emitting device display having thin film transistor manufactured by the same
US8723181B2 (en) Stacked transistors and electronic devices including the same
JP2008235905A (en) Semiconductor device and its manufacturing method
CN108428620B (en) Low-temperature polycrystalline silicon and product thereof, preparation method and device and laser assembly
JP2009176407A (en) Semiconductor storage device
JP2005217214A (en) Method for manufacturing semiconductor thin film and image display device
US20080038883A1 (en) Method for manufacturing semiconductor device utilizing recrystallized semiconductor film formed on an insulating film
JP4137461B2 (en) Method for manufacturing semiconductor device
JP2003168803A (en) Semiconductor device
CN100423043C (en) Two-dimensional display panel construction and manufacturing method thereof
JP4689150B2 (en) Semiconductor circuit and manufacturing method thereof
JP2009111053A (en) Semiconductor device, and manufacturing method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees