TWI266377B - Method and system for fast on-line electro-optical detection of wafer defects - Google Patents

Method and system for fast on-line electro-optical detection of wafer defects

Info

Publication number
TWI266377B
TWI266377B TW92100777A TW92100777A TWI266377B TW I266377 B TWI266377 B TW I266377B TW 92100777 A TW92100777 A TW 92100777A TW 92100777 A TW92100777 A TW 92100777A TW I266377 B TWI266377 B TW I266377B
Authority
TW
Taiwan
Prior art keywords
wafer
view
detectors
ccd matrix
photo
Prior art date
Application number
TW92100777A
Other languages
Chinese (zh)
Other versions
TW200412639A (en
Inventor
Gad Neumann
Original Assignee
Negevtech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/319,716 external-priority patent/US6693664B2/en
Application filed by Negevtech Ltd filed Critical Negevtech Ltd
Publication of TW200412639A publication Critical patent/TW200412639A/en
Application granted granted Critical
Publication of TWI266377B publication Critical patent/TWI266377B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/069—Supply of sources
    • G01N2201/0696—Pulsed
    • G01N2201/0697—Pulsed lasers

Abstract

A method and system for fast on-line electro-optical detection of wafer defects featuring illuminating with a short light pulse from a repetitively pulsed laser, a field of view of an electro-optical camera system having microscopy optics, and imaging a moving wafer, on to a focal plane assembly optically forming a surface of photo-detectors at the focal plane of the optical imaging system, formed from six detector ensembles, each ensemble including an array of four two-dimensional CCD matrix photo-detectors, whereby each two-dimensional CCD matrix photo-detector produces an electronic image of a large matrix of two million pixels, such that the simultaneously created images from the different CCD matrix detectors are processed in parallel using conventional image processing techniques, for comparing the imaged field of view with another field of view serving as a reference, in order to find differences in corresponding pixels, indicative of the presence of a wafer die defect. The continuously moving wafer is illuminated by a laser pulse of duration, for example, ten nanoseconds, significantly shorter than the pixel dwell time, that there is effectively no image smear during the wafer motion. The laser pulse has sufficient energy and brightness to impart the necessary illumination to each sequentially inspected field of view required for creating an image of the inspected wafer die. Parallel processing of a focal plane assembly including twenty-four CCD matrix photo-detectors pro-vides an overall pixel processing data rate of nearly 1.5 giga-pixels per second. The wafer inspection system operates essentially at 100% efficiency, whereby, the laser pulse rate of 30 pulses per second is synchronized with the frame speed of 30 frames per second of each CCD matrix photo-detector, and the wafer is moved at a linear speed such that the distance between successive fields of view is covered in 1/30 of a second.
TW92100777A 2002-12-16 2003-01-15 Method and system for fast on-line electro-optical detection of wafer defects TWI266377B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/319,716 US6693664B2 (en) 1999-06-30 2002-12-16 Method and system for fast on-line electro-optical detection of wafer defects

Publications (2)

Publication Number Publication Date
TW200412639A TW200412639A (en) 2004-07-16
TWI266377B true TWI266377B (en) 2006-11-11

Family

ID=38191561

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92100777A TWI266377B (en) 2002-12-16 2003-01-15 Method and system for fast on-line electro-optical detection of wafer defects

Country Status (1)

Country Link
TW (1) TWI266377B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101996908B (en) * 2009-08-14 2013-03-27 中芯国际集成电路制造(上海)有限公司 Method for detecting wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101996908B (en) * 2009-08-14 2013-03-27 中芯国际集成电路制造(上海)有限公司 Method for detecting wafer

Also Published As

Publication number Publication date
TW200412639A (en) 2004-07-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees