1260693 16592twf.doc/ying 九、發明說明： 【發明所屬之技術領域】 本發明是有_-種陣舰缺其修齡法，且特別 是有關於一種薄膜電晶體陣列基板及其修補方法。 【先前技術】 為了配合現代生活模式，視訊或影像褒置之體積日漸 趨於薄輕。賴的陰姉線顯示H，軸仍有其優點，但 是其需佔用大體積且十分耗f，因此，具有高畫f、空間 利用效率佳、低消耗功率、無輻射等優越特性之薄膜電晶 M^a-0|^li(Thin Film Transistor Liquid Crystal Display TFT-LCD)已逐漸成為市場之主流。 ’ 薄膜電晶體陣列基板通常是於一玻璃基板上形成一第 、金屬層（閘極層）、-第—介電層（閘極絕緣層）、一半 ，體層、一第二金屬層（源極/汲極層）及一第二介電層（保 k層）並於基板上形成多數條資料配線(data iine)、多數 條掃目苗配線(scan line)、多數條共用配線(C0inm0n Η㈣、多 數個薄膜電晶體（包括一閘極、一半導體島狀結構以及一源 極/;及極)與夕數個晝素電極(yxel electr〇de)，其中閘極與掃 描配線電性連接，祕復極與資料配線 、晝素電極電性連 接。掃描配線與共用配線例如屬於第一金屬 層的一部份， t導體島狀結構屬於半導體層的一部份，而資料配線屬於 第t金屬層的一部份，此外，掃描配線與資料配線之間會 =第一介電層彼此電性隔絕，而在資料配線上方亦會覆蓋 弟一介電層。 5 1260693 16592twf.doc/ying 在薄膜電晶體陣列基板的製造過程中，可能合 瑕疵(dot defect)或是線瑕疵Gine defect)等問題點 :可，生之情況例如有:共用配線斷線、共用配、= 料配線短路、掃瞒配線斷線以及資料配線斷線 :：貝 電晶體陣列基板發生上述之線财^，料針對異 分進行修補，將使得薄膜電晶體_基板的餘/ 下降’而如何對於這些線瑕錢行修補，已成為目〈巾= 顯不器製造的重要課題。 '曰曰 【發明内容】 因此，本發明的目的就是在提供一種薄膜電晶體陣 基板，此薄膜電晶體陣列基板可對於共用配線斷線、共 配線與資料配線短路、掃瞄配線斷線以及資料配線斷&等 線缺陷進行修補，進而提高此薄膜電晶體陣列基板之製程 良率。 ^ 本發明的另一目的就是在提供一種適用於上述薄膜 電晶體陣列基板之修補方法，此修補方法用以對具有共用 配線斷線、共用配線與資料配線短路、掃瞄配線斷線以及 資料配線斷線等線缺陷之薄膜電晶體陣列基板進行修補， 進而提高此薄膜電晶體陣列基板之製程良率。 基於上述目的，本發明提出一種薄膜電晶體陣列基 板，主要由一基板、多數條掃描配線、多數條資料配線、 夕數條共用配線、多數個薄膜電晶體、多數個晝素電極以 及多數條修補線段所構成。這些掃描配線與這些資料配線 配置於基板上，且這些掃描配線與這些資料配線劃分出多 6 1260693 16592twf.doc/ying • 數個呈陣列排列之晝素區域，此共用配線與此掃目苗配線平 行，交替配置於基板上，每一個薄膜電晶體位於對應之晝 素區，内，且薄膜電晶體藉由掃描配線以及資料配線驅 動，每一個晝素電極位於對應之畫素區域内，以與對應之 薄膜電晶體電性連接，各修補線段位於至少一掃瞒配線上 方’並與資料配線交替配置，且各修補線段兩端分別與掃 瞄配線兩側之相鄰兩共用配線有部分重疊。 φ 依照本發明之較佳實施例所述之薄膜電晶體陣列基 板’其中各共用配線之兩侧分別具有向外延伸之多數個分 支’且各分支緊鄰於其所對應之資料配線。 依照本發明之較佳實施例所述之薄膜電晶體陣列基 板’其中各修補線段兩端分別與其所對應之共用配線的分 支部分重疊。 依照本發明之較佳實施例所述之薄膜電晶體陣列基 板’其中修補線段與資料配線例如是利用同一製程製造。 本發明更提出一種薄膜電晶體陣列基板的修補方法， 鲁 其適於對上述本發明之薄膜電晶體陣列基板進行修補，其 • 中’專膜電晶體陣列基板具有一瑕/疵，此瑕寐使一共用配線 產生斷路，此修補方法是分別電性連接此瑕疵兩端之共用 配線於一第一修補線段與一第二修補線段，並分別電性連 接此第一修補線段與此第二修補線段於另一共用配線。 本發明更提出一種薄膜電晶體陣列基板的修補方法， 其適於對上述本發明之薄膜電晶體陣列基板進行修補，其 . 中溥膜電晶體陣列基板具有一瑕，疵，此瑕疲使一資料配線 與一共用配線產生短路，此修補方法是電性隔絕此瑕疵兩 7 1260693 16592twf.doc/ying ，線，分別電性連接此财t兩端之制配線於一 修補線段與-第二修補線段，並分別電性連接此第一 心補線段與此第二修補線段於另—共用配線。 本發明更提出—種薄膜電晶體陣列基板的修補方法， 二適於對上述本發明之薄膜電晶體陣列基板進行修補，其 I制電晶體陣列基板具有—贼，此贼使—掃瞒配線 生斷路，此修補方法是分別電性連接此職兩端之掃晦 #配線於-第-修補線段與一第二修補線段，分別電性連接 修補線段與此第二修補線段於—共用配線，並電性 =、、、巴此共用配狀—部份，形成—替代線段，其中此替 、、泉段電性連接此第-修補線段與此第二修補線段。 依恥本發明之較佳實施例所述之薄膜電晶體陣列笑 板’其中共用配線各分支分別具有一凸出部，且凸出部ς 其所對應之㈣配線的上方，而與此資料配線有部分 • 甘本發明更提出一種薄膜電晶體陣列基板的修補方、去 二，對上述本發明之薄膜電晶體陣列基板進行修補’，复 薄搞電晶辦列基板具m此瑕献—資料二 生斷路，此修補方法是分別電性連接此械㈣粗 配巧：第-共用配線之一第-分支以及一第二共用酉貝二 之#第二分支，並利用一修補線段電性連接此第一分支盥 匕第—分支，且電性隔絕此第一共用配線與此第一分= 及電性隔絕此第二共用配線與此第二分支。 以 依照本發明之較佳實施例所述之薄膜電晶體陣列美 8 1260693 16592twf.doc/ying 板其中電性隔絕之方法包括雷射移除。 本务明之較佳實施例所述之薄膜電晶r陳引宜 板的='，其中電性連接之方法二^ 之多數“ ίΓΐ形成資料配線時，同時形成作為修補用 方，並與各修補線段位於至少—掃晦配線上1260693 16592twf.doc/ying IX. Description of the invention: [Technical field to which the invention pertains] The present invention is directed to a method for repairing age, and in particular to a thin film transistor array substrate and a repairing method thereof. [Prior Art] In order to cope with the modern lifestyle, the volume of video or video files is becoming thinner and lighter. Lai's haze line shows H, the axis still has its advantages, but it needs to occupy a large volume and consumes f. Therefore, it has a high-definition f, excellent space utilization efficiency, low power consumption, no radiation and other superior characteristics of the film. M^a-0|^li (Thin Film Transistor Liquid Crystal Display TFT-LCD) has gradually become the mainstream of the market. A thin film transistor array substrate is generally formed on a glass substrate, a metal layer (gate layer), a -first dielectric layer (gate insulating layer), a half, a bulk layer, and a second metal layer (source) And a second dielectric layer (protection k layer) and a plurality of data lines (data iine), a plurality of scan lines, and a plurality of common lines (C0inm0n Η (4), a plurality of thin film transistors (including a gate, a semiconductor island structure, and a source/; and a pole) and a plurality of yin electrodes (yxel electr〇de), wherein the gate is electrically connected to the scan wiring, and the secret The repolarization is electrically connected to the data wiring and the halogen electrode. The scanning wiring and the common wiring are, for example, part of the first metal layer, the t-conductor island structure belongs to a part of the semiconductor layer, and the data wiring belongs to the t-th metal layer. In addition, between the scan wiring and the data wiring, the first dielectric layer is electrically isolated from each other, and the dielectric layer is covered over the data wiring. 5 1260693 16592twf.doc/ying Crystal array substrate manufacturing process Possible problems such as dot defect or Gine defect: Yes, for example, there are common wiring disconnection, shared wiring, = material wiring short circuit, broom wiring disconnection, and data wiring disconnection: : The above-mentioned line of the crystal of the silicon crystal array substrate, the material is repaired for the different points, which will make the remaining/decrease of the thin film transistor_substrate', and how to repair the lines for these lines has become a target. An important issue in the manufacture of devices. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a thin film transistor array substrate which can be used for common wiring disconnection, common wiring and data wiring short, scan wiring disconnection, and data Wiring and other line defects are repaired to improve the process yield of the thin film transistor array substrate. Another object of the present invention is to provide a repairing method suitable for the above-mentioned thin film transistor array substrate, which is used for having a common wiring disconnection, a common wiring and a data wiring short circuit, a scan wiring disconnection, and a data wiring The thin film transistor array substrate with wire defects and the like is repaired, thereby improving the process yield of the thin film transistor array substrate. Based on the above object, the present invention provides a thin film transistor array substrate, which mainly comprises a substrate, a plurality of scanning lines, a plurality of data lines, a plurality of common lines, a plurality of thin film transistors, a plurality of halogen electrodes, and a plurality of patches. The line segment is composed. These scan lines and these data lines are arranged on the substrate, and these scan lines and these data lines are divided into 6 1260693 16592 twf.doc/ying • a plurality of pixel regions arranged in an array, the shared wiring and the sweeping wire wiring Parallel, alternately disposed on the substrate, each of the thin film transistors is located in the corresponding pixel region, and the thin film transistor is driven by the scan wiring and the data wiring, and each of the pixel electrodes is located in the corresponding pixel region to Corresponding thin film transistors are electrically connected, each repairing line segment is located above at least one broom wiring and alternately arranged with the data wiring, and both ends of each repairing wire segment partially overlap with adjacent two common wires on both sides of the scanning wire. φ In accordance with a preferred embodiment of the present invention, a thin film transistor array substrate ’ has a plurality of branches extending outwardly on both sides of each common wiring and each branch is adjacent to its corresponding data wiring. The thin film transistor array substrate 'in accordance with the preferred embodiment of the present invention has its two portions of the repaired line segments respectively overlapping with the branch portions of the corresponding common wiring. The thin film transistor array substrate 'in accordance with the preferred embodiment of the present invention' wherein the repair line segments and the data wiring are manufactured, for example, using the same process. The invention further provides a repairing method for a thin film transistor array substrate, which is suitable for repairing the above-mentioned thin film transistor array substrate of the present invention, wherein the 'special film transistor array substrate has a 瑕/疵, 瑕寐The common wiring is disconnected. The repairing method is to electrically connect the common wirings at both ends of the crucible to a first repairing line segment and a second repairing line segment, and electrically connecting the first repairing line segment and the second repairing portion respectively. The line segment is on another shared wiring. The present invention further provides a method for repairing a thin film transistor array substrate, which is suitable for repairing the above-mentioned thin film transistor array substrate of the present invention, wherein the ruthenium film transistor array substrate has a 瑕, 疵, the fatigue The data wiring and a common wiring are short-circuited. The repair method is to electrically isolate the two 7 1260693 16592twf.doc/ying, and the wires are respectively electrically connected to the wiring of the two ends of the financial line in a repairing line segment and - the second patching The line segment is electrically connected to the first core patch segment and the second patch segment segment to the other shared wiring. The invention further proposes a method for repairing a thin film transistor array substrate, and the second method is suitable for repairing the above-mentioned thin film transistor array substrate of the invention, wherein the I-made transistor array substrate has a thief, and the thief makes a broom. The circuit is electrically connected to the brooms of the two ends of the job. The wiring is connected to the first repairing line segment and the second repairing line segment, respectively, and the electrical connection repairing line segment and the second repairing line segment are respectively shared and wired. The electrical =, , and the bar share a matching portion, forming a replacement line segment, wherein the replacement and spring segments are electrically connected to the first repairing line segment and the second repairing line segment. According to a preferred embodiment of the preferred embodiment of the present invention, the thin film transistor array board has a protruding portion and a protruding portion corresponding to the (four) wiring, and the data wiring Partially, the invention also proposes a repairing method for a thin film transistor array substrate, and the repairing of the above-mentioned thin film transistor array substrate of the present invention. The second repair circuit, the repair method is to electrically connect the device (4) coarsely: the first branch of the first-shared wiring and the second branch of the second shared mussel two, and electrically connected by a repaired line segment. The first branch is a first branch, and electrically isolates the first shared wiring from the first branch and electrically isolates the second shared wiring from the second branch. A method of electrically isolating a thin film transistor array according to a preferred embodiment of the present invention includes laser removal. According to the preferred embodiment of the present invention, the thin film electro-crystal lacquering plate = ', wherein the method of electrically connecting the majority of the two" is formed at the same time as the repairing party, and is located at each repairing line segment. At least - on the broom wiring
由射祕的方式使修補線段與共用配線電性連接，輔^ 雷射移除的修補步驟，因此可對於共用配線斷線、 線與資料配線短路以及掃紐_線轉贼進行= 此外，本發明共用配線之各分支分別具有一凸出 且此凸出部延伸至其所職之資料配線的上方，而^ ΐΐίΓΓίΐ疊。於修補時，藉由雷射溶接的方歧此 貝料配線；、此制配線電性連接，輔以雷射移除的修 驟，因此可對於資料配線斷線之線瑕疵進行修補。少 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 薄膜電晶體陣列基板通常包含-基板、多數條掃描配 線、多數條資料配線、多數條共用配線、多數個薄膜電晶 體、多數個畫素電極所構成。多數條掃描配線與多數條資 料配線配置於基板上，且這些掃描配線與這些資料配線割 分出多數個呈陣列排列之晝素區域，每一個薄膜電晶體ς 於對應之晝素區域内，且各薄膜電晶體藉由掃描配線以及 9 1260693 16592twf.doc/ying 資料配線驅動。每一個畫素電極位於對應之畫素區域内， 以與對應之薄膜電晶體電性連接。The repairing line segment is electrically connected to the common wiring by the method of shooting, and the repairing step of the laser removal is performed, so that the common wiring disconnection, the short circuit of the line and the data wiring, and the sweeping line _ thief are performed = In addition, this Each branch of the inventive shared wiring has a protrusion and the protrusion extends above the data wiring of the job, and is ΐ ΓΓ ΓΓ 。. At the time of repair, the wire is wired by the laser-dissolved square; the wiring is electrically connected, and the laser removal is repaired, so that the wire of the data wiring can be repaired. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the appended claims. [Embodiment] A thin film transistor array substrate usually comprises a substrate, a plurality of scanning lines, a plurality of data lines, a plurality of common lines, a plurality of thin film transistors, and a plurality of pixel electrodes. A plurality of scanning wires and a plurality of data wires are disposed on the substrate, and the scanning wires and the data wires are divided into a plurality of pixel regions arranged in an array, and each of the thin film transistors is disposed in the corresponding pixel region, and Each thin film transistor is driven by scan wiring and 9 1260693 16592 twf.doc/ying data wiring. Each of the pixel electrodes is located in a corresponding pixel region to be electrically connected to the corresponding thin film transistor.
圖1繪示為本發明第一實施例的局部結構示意圖。請 參妝圖1 ’溥膜電晶體陣列基板10之一第一共用配線丨2、 一掃瞄配線14與相鄰之一第二共用配線16平行而交替配 置於例如一玻璃基板Η上，一第一修補線段18、一資料 配線20+與一第二修補線段22交替配置於例如一玻璃基板 11上，第一修補線段18及第二修補線段22位於掃瞄配線 14上方，，並且第一修補線段18兩端分別與掃瞄配線14兩 側之相鄰共用配線12，16有部分重疊13，15,並且第二修補 線段22兩端分別與掃瞄配線14兩側之相鄰共用配 有部分重疊η，19，薄膜電晶體之半導體島狀結構24位於 抑瞄配線14上方，薄膜電晶體之源極26與汲極28位於 導體島狀結構24上方，其中汲極Μ與資料配線Μ電 接。 〃第-共用配線12、掃晦配線14與第二共用配線 於第一金屬層的一部份，而資料配線2〇、第一修補線段 及第二修補線段22屬於第二金屬層的-部份，即第一 配線12、掃瞄配線14與第二共用配線16可利用同一制 製造，資料配線20、第一修補線段18及第二修補線段= 可利用同-製程製造。此外，第—金屬層與第^金屬 間例如以一介電層彼此電性隔絕。因此，於正常狀況: 描配線14與資料配線20間相互電性隔絕，而修補線= 18,22與共用配線12，16亦相互電性隔絕。 又 圖2繪示為本發明第二實施例的結構示意圖。請參照 10 1260693 16592twf.doc/yingFIG. 1 is a schematic partial structural view of a first embodiment of the present invention. 1 "One of the first common wirings 2 of the silicon oxide transistor array substrate 12, and one scanning wiring 14 is alternately arranged in parallel with one adjacent second common wiring 16 on, for example, a glass substrate, A repairing line segment 18, a data wiring 20+ and a second repairing line segment 22 are alternately disposed on, for example, a glass substrate 11, and the first repairing line segment 18 and the second repairing line segment 22 are located above the scanning wiring 14, and the first patching The two ends of the line segment 18 are partially overlapped with the adjacent common wirings 12, 16 on both sides of the scanning wiring 14, and the two ends of the second repairing line segment 22 are respectively provided with the adjacent sides of the scanning wiring 14 respectively. The semiconductor island structure 24 of the thin film transistor is over the snu . The first shared wiring 12, the broom wiring 14 and the second common wiring are part of the first metal layer, and the data wiring 2, the first repairing line segment and the second repairing line segment 22 belong to the second metal layer The first wiring 12, the scan wiring 14, and the second common wiring 16 can be manufactured by the same system, and the data wiring 20, the first repairing line segment 18, and the second repairing line segment can be manufactured by the same process. Further, the first metal layer and the second metal are electrically isolated from each other, for example, by a dielectric layer. Therefore, in a normal state: the wiring 14 and the data wiring 20 are electrically isolated from each other, and the repairing wires = 18, 22 and the common wirings 12, 16 are also electrically isolated from each other. 2 is a schematic structural view of a second embodiment of the present invention. Please refer to 10 1260693 16592twf.doc/ying
圖2，本實施例的結構與第一實施例大致相同，不同的是 共用配線的結構。例如’弟一共用配線12之一側具有向外 延伸之一第一分支32,另一側具有一分支33,這些分支緊 鄰於其所對應之資料配線20，並且第二共用配線16之一 側具有向外延伸之一第二分支34。第一修補線段18之兩 端分別與第一分支32及第二分支34部分重疊形成第一重 疊部42與第二重疊部44,第二修補線段22之兩端與第三 分支36及第四分支38分別部分重疊形成第三重疊部46 與第四重疊部48。 薄膜電晶體陣列基板因製程的瑕巍或其他因素，可能 發$共用配線斷線、共用配線與資料配線短路以及掃瞄配 線斷，等線贼。本發明於下文巾將針對上述線瑕疯，提 出以第二實施綱減之修補結構進行修_方法，但並In Fig. 2, the structure of this embodiment is substantially the same as that of the first embodiment, except that the structure of the shared wiring is used. For example, one side of the common-distribution wiring 12 has one of the first branches 32 extending outward, and the other side has a branch 33 which is adjacent to the corresponding data wiring 20 and one side of the second common wiring 16 There is one of the second branches 34 extending outward. The two ends of the first repairing line segment 18 are partially overlapped with the first branch 32 and the second branch 34 respectively to form a first overlapping portion 42 and a second overlapping portion 44, and the two ends of the second repairing line segment 22 and the third branch 36 and the fourth portion The branches 38 are partially overlapped to form a third overlapping portion 46 and a fourth overlapping portion 48, respectively. Due to process defects or other factors, the thin film transistor array substrate may issue a common wiring disconnection, a common wiring and data wiring short circuit, and a scan wiring disconnection. The present invention will be directed to the above-mentioned wire madness, and the repairing structure of the second embodiment is proposed, but
限定本發明，相同的方法亦同樣適 所揭露之結構。 木Λ J 分μ與第时支38電性連m3 f生連接’第二部 電晶體陣列基板1G之It 其修補方法例如是從薄膜 疊卿;妾第 部分52與第-修補線段18、^第，午進而使第一 樣的，可以利用第二重=σΜ2氣性連接。同 連接第-修補線段18 ΓH f接之方法’電性 弟一共用配線16，利用第三重疊 ;/ying 1260徽wfd_ 部46，電性連接第二共用 及利用第四重疊部48 二f第狄二修補線段…以 部分54。如此，共用配線=接^多補線段22與第二 、、展之苐一部分52鱼第-邱八u π 用配線16、第二修補線段2 二外丨之弟一共 接，達到修復的目的。以及弟四分支38相互電性連 同4^著i疋修復共用配線與資料配線發生短路之情況， 二」ΓΓ以本發明修補共用配線與資料配線短路之示咅、 薄膜電晶體陣列基板10之一資料二 性連接於—短路點56，其修補方法是 二田方法先形成二切斷點58,60於短路 1_點^別同時將共用配線η電性隔絕為 7刀52與一弟二部分54，其中第一部分52與第一分支32 電性連接，第二部分54與第四分支38電性連接，與上述 修補共用配線斷線之方法相同，可利用雷射 第:重疊部42熔接第-分支32與第—修補線段18，^而 使第一部分52與第一修補線段18於第一重疊部幻電性連 接。同樣的，可以利用第二重疊部44,以雷射熔接之方法， 電性連接第一修補線段18與第二共用配線16，利用第三 重疊部46,電性連接第二共用配線16與第二修補線段22, 以及利用第四重疊部48，電性連接第二修補線段22與第 二部分54。如此共用配線之第一部分52與第二部分54可 以藉由第一分支32、第一修補線段18、相鄰之第二共用配 線16、弟一修補線段22以及第四分支38相互電性連接， 12 1260693 16592twf.doc/ying 達到修復的目的。 接著，是修復掃瞄配線發生斷線之情況，圖5拎示為 以本發明修補掃瞄配線斷線之示意圖。請參照& 5丨^膳 電晶體陣列基板10之一掃目苗配線Μ因一斷路點°62雷性隔 離為一第三部分64與一第四部分66。其修 從薄膜電晶體陣列基板10之背面，利用雷射 /二口 第：重，熔接第一分支32與第一修補線|ΐ8二雷 鲁射丨谷接第三部分64與第一修補線段18於—笛、j田 以利用雷射熔接的方式於第四重疊部48熔接第四分 了 與第二修補線段22，並雷射熔接第四部分沾鱼刀一支38 線段22於一第六重疊部7〇,使第四分支38與第四補 電性連接。接著，以雷射移除的方法形成二切斷點7刀66 於第一共用配線12,電性隔絕第一共用配線12之、一* 形成一替代線段76，其中替代線段76電性連接第二 32及第四分支38。如此，掃瞄配線14之第三部分料 • 四部分66可以藉由第一修補線段18、第一分支32、^弟 線段76、第四分支38以及第二修補線段22相互带二1 接，達到修復的目的。 $性連 圖6繪示為本發明第三實施例的結構示意圖。請表沪 圖6 ’本實施例的結構與第二實施例大致相同，不同&了 共用配線的結構，例如，第一分支32與第二分支34分= 具有—第一凸出部78與一第二凸出部80,且凸出部72,肋 延伸至其所對應之資料配線20的上方，而與資料配綠 分別部分重疊形成一第七重疊部82與一第八重疊部料。 13 1260693 16592twf.doc/ying 下文中將針對資料配線發生斷線的情形，提出以第三 揭露之修補結構進行修補的方法，但並非用以: J 77繪：為以本發明修補資料配線斷線之示意圖。請 =電性隔離為一第七部分88 、 : 補方法例如是從薄膜電晶體 ^刀^ 之方法，電性連接第用第—5疊部42 ’以雷射熔接 ^ ^ # ^ 刀支32與第一修補線段18，利用 分％如電性連接第二分支34與第八部 可以藉由二 線第2°:第七部分88與第八部分9。 性連接，復的目的“補線段18、第二分支34電 層之$分且明之修補線段屬於第二金屬 區域之間，透光之特性，並且配置於各晝素 能’遮Ma㈣的功 對比。 一京門之漏先，提鬲液晶顯示器顏色的 配線體㈣基板發生制配線斷線、共用 貝科配線短路、掃贿線斷線以及資料配線斷線等 14 1260693 16592twf.doc/ying 線缺陷時，僅需以雷射溶接特定的重疊部分 移除的修補步驟，即可對上述線瑕龜 以田射 於提高整體之製程I率。 w ’因而有助 ㈡本發明之修補線段與資料配線屬於第二 層’因此修補線段與資料配線可利用同—製 以修復薄膜電晶體陣列基板，但不會增加製程的數目1 且修補線段可以發揮如黑色矩陣的功 顏色的對比。 刀肊“液晶顯不器 改變ΐ二?用=分支及其凸出部’其製作僅需 ，“用配線之城，可用以修復薄膜電晶 但不會增加製程的數目。 J土板 雖然本發明已以較佳實施例揭露如上，秋 限定本發明，任何孰習 “〜、並非用以 範圍各Γ一午更與潤飾，因此本發明之保護 ，圍田視伽之巾請專職圍所界定者為準。 【圖式簡單說明】 、 w 貝哪句邯結構不葸圖。 Y為本發明第二實施例的結構示意圖。 為以本發明修補共用配線斷線之示意圖。 、為以本發明修補共用配線與資料配線短路之 Ξ 本發明第—實施例的局部結構示意圖 二1 II 了為本發明第二實施例的結構示意圖。 圖 3 % 不 A ·、》L ^ 圖4纟會示 示意圖。 Ξ二ιιτ為以本發明修補掃礙配線斷線之示意圖。 Ξ 7::為本發明第三實施例的結構示意圖。 Θ 、θ示為以本發明修補資料配線斷線之示意圖。 15 1260693 16592twf.doc/ying 【圖式標示說明】 10 :薄膜電晶體陣列基板 11 :玻璃基板 12 :第一共用配線 14 ··掃瞄配線 13,15，17，19 :部分重疊 16 :第二共用配線 18 :第一修補線段 20 :資料配線 22 :第二修補線段 24 :半導體島狀結構 26 :源極 28 :汲極 32 :第一分支 33 :分支 34 :第二分支 36 :第三分支 38 ··第四分支 42 :第一重疊部 44 :第二重疊部 46 :第三重疊部 48 ··第四重疊部 50 ··斷路點 52 :第一部分 54 :第二部分 16 1260693 16592twf.doc/ying 56 :短路點 58,60 ··切斷點 62 :斷路點 64 ··第三部分 66 :第四部分 68 :第五重疊部 70 :第六重疊部 72,74 ··切斷點 76 :替代線段 78 :第一凸出部 80 ··第二凸出部 82 ··第七重疊部 84 :第八重豐部 86 ··斷路點 88 ··第七部分 90 ··第八部分Having defined the invention, the same method is equally suitable for the disclosed structure. The raft J and the first branch 38 are electrically connected to the m3 f. The second transistor array 1G is connected to the second transistor array 1G. The repair method is, for example, from the film stack; the first portion 52 and the first repair line segment 18, ^ The first and the second, and the second, can be connected by the second weight = σΜ2. The method of connecting the first-repairing line segment 18 ΓH f is connected to the electric-powered first shared wiring 16, using the third overlap; /ying 1260 emblem wfd_ portion 46, electrically connecting the second sharing and using the fourth overlapping portion 48 Di Di repair line segment... to part 54. In this way, the shared wiring = the multi-twist section 22 is connected to the second, the part of the exhibition 52, the fish-the-eighth u π wiring 16, and the second repairing line section 2, the second outer scorpion, to achieve the purpose of repair. And the four branches 38 are mutually electrically connected together with each other to repair the short circuit between the shared wiring and the data wiring. Second, the one of the thin film transistor array substrate 10 is repaired by the present invention by repairing the short circuit of the shared wiring and the data wiring. The data is connected to the short-circuit point 56. The repair method is that the Ertian method first forms two cut-off points 58 and 60. At the same time, the common wiring η is electrically isolated into 7-knife 52 and a second-part part. The first portion 52 is electrically connected to the first branch 32, and the second portion 54 is electrically connected to the fourth branch 38. The method is the same as the method of repairing the common wiring disconnection, and the laser portion: the overlapping portion 42 can be welded. The branch 32 and the first repairing line segment 18, the first portion 52 and the first repairing line segment 18 are phantomically connected at the first overlapping portion. Similarly, the second overlapping portion 44 can be used to electrically connect the first repairing line segment 18 and the second common wiring 16 by laser welding, and electrically connect the second common wiring 16 with the third overlapping portion 46. The second repairing line segment 22 and the second overlapping portion 48 are electrically connected to the second repairing line segment 22 and the second portion 54. The first portion 52 and the second portion 54 of the shared wiring can be electrically connected to each other by the first branch 32, the first repairing line segment 18, the adjacent second common wiring 16, the second repairing line segment 22, and the fourth branch 38. 12 1260693 16592twf.doc/ying Achieve the purpose of repair. Next, it is a case where the disconnection of the scan wiring is repaired, and Fig. 5 is a schematic view showing the repair of the broken wiring of the scan wiring by the present invention. Please refer to & 5 丨 ^ 电 电 电 电 之一 之一 之一 之一 之一 之一 之一 之一 之一 之一 ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° Repairing from the back side of the thin film transistor array substrate 10, using the laser/two-port: heavy, welding the first branch 32 and the first repairing line | ΐ 8 two lei 丨 丨 接 connected to the third portion 64 and the first repaired line segment 18 _ flute, j field in the way of laser welding in the fourth overlapping portion 48 welded fourth and second repair line segment 22, and laser welding fourth portion of the fish knife a 38 line segment 22 in a The sixth overlapping portion 7 is connected to the fourth complementary portion. Then, a laser cutting method is used to form a second cutting point 7 to the first common wiring 12, electrically isolating the first common wiring 12, and forming a replacement line segment 76, wherein the replacement line segment 76 is electrically connected. Two 32 and fourth branch 38. Thus, the third portion of the scan wiring 14 • the four portions 66 can be connected to each other by the first repairing line segment 18, the first branch 32, the second line segment 76, the fourth branch 38, and the second repairing line segment 22, Reach the purpose of repair. FIG. 6 is a schematic structural view of a third embodiment of the present invention. Please refer to FIG. 6'. The structure of this embodiment is substantially the same as that of the second embodiment. The structure of the common wiring is different, for example, the first branch 32 and the second branch 34 are divided into having the first protrusion 78 and A second protruding portion 80, and the protruding portion 72, the rib extends above the corresponding data wiring 20, and partially overlaps with the data matching green to form a seventh overlapping portion 82 and an eighth overlapping portion. 13 1260693 16592twf.doc/ying In the following, the method of repairing the repaired structure of the third disclosure is proposed for the case where the data wiring is broken, but it is not used for: J 77: In order to repair the data wiring disconnection with the present invention Schematic diagram. Please = electrically isolated as a seventh part 88, : the supplementary method is, for example, from the method of thin film transistor ^ ^ ^, electrically connected to the fifth - stack 42 'to laser fusion ^ ^ # ^ knife 32 With the first repairing line segment 18, the second branch 34 and the eighth portion may be electrically connected by a fraction %, and may be by the second line 2°: the seventh portion 88 and the eighth portion 9. Sexual connection, the purpose of the complex "the line segment 18, the second branch 34 electrical layer of the $ points and the clear repair line segment belongs to the second metal region, the characteristics of light transmission, and is configured in each of the elements can cover the Ma (four) work comparison First, the leakage of the liquid crystal display (4) substrate wiring disconnection, shared Bec wiring short circuit, bribery line disconnection and data wiring disconnection, etc. 14 1260693 16592twf.doc/ying line defect In the case of the repairing step of removing the specific overlapping portion by laser, the above-mentioned line turtle can be shot in the field to improve the overall process rate I. w' thus helps (2) the repaired line segment and data wiring of the present invention It belongs to the second layer. Therefore, the repaired line segment and the data wiring can be used to repair the thin film transistor array substrate, but the number of processes is not increased. 1 and the repaired line segments can be used as a comparison of the work colors of the black matrix. The display is changed by the second branch. The use of the = branch and its projections is only required. "The city with wiring can be used to repair the thin film electro-crystal without increasing the number of processes. The above has been disclosed in the preferred embodiment, and the invention is limited in the autumn, and any of the abuses "~, is not used for the scope of the noon and the retouching, so the protection of the present invention, the definition of the fence of the gamma, please define the full-time enclosure. Prevail. [Simple description of the diagram], w. Y is a schematic structural view of a second embodiment of the present invention. A schematic diagram of repairing a common wiring breakage with the present invention. In order to repair the short circuit of the shared wiring and the data wiring by the present invention, a partial structure diagram of the first embodiment of the present invention is shown in the second embodiment of the present invention. Figure 3 % not A ·, "L ^ Figure 4纟 will show a schematic diagram. Ξ二ιιτ is a schematic diagram of repairing the wire breakage by the invention. Ξ 7:: A schematic structural view of a third embodiment of the present invention. Θ and θ are diagrams showing the repair of the data wiring break line by the present invention. 15 1260693 16592twf.doc/ying [Graphic indication] 10: Thin film transistor array substrate 11: Glass substrate 12: First common wiring 14 · Scan wiring 13, 15, 17, 19: Partial overlap 16: Second Common wiring 18: first repairing line segment 20: data wiring 22: second repairing line segment 24: semiconductor island structure 26: source 28: drain 32: first branch 33: branch 34: second branch 36: third branch 38··fourth branch 42: first overlapping portion 44: second overlapping portion 46: third overlapping portion 48··fourth overlapping portion 50··breaking point 52: first portion 54: second portion 16 1260693 16592twf.doc /ying 56: Short-circuit point 58, 60 · Cut-off point 62: Break point 64 · Third part 66: Fourth part 68: Fifth overlap part 70: Sixth overlap part 72, 74 · Cut-off point 76 : Substituting line segment 78 : first protruding portion 80 · second protruding portion 82 · seventh overlapping portion 84 : eighth heavy portion 86 · breaking point 88 · · seventh portion 90 · · eighth portion