TWI259595B - Short-wavelength laser scribing device for complementary metal oxide semiconductor (CMOS) substrate and scribing method thereof - Google Patents

Abstract

The present invention relates to a short-wavelength laser scribing device for complementary metal oxide semiconductor (CMOS) substrate and scribing method thereof. The short-wavelength laser scribing device of the invention comprises a working platform, upon which a CMOS substrate can be fixed in vacuum; in addition, a video system can be applied to monitor and adjust the working platform. An optical light-guiding system can be used to guide a short-wavelength laser whose impulse wavelength is between 150 to 400 nanometers to the CMOS substrate surface on the working platform so as to perform the scribing. The short-wavelength laser used in the present invention is capable of directly realizing the power of 0.4 Watt or above on the surface of the CMOS substrate so as to effectively etch the CMOS substrate and form scribed lines. Therefore, applying other auxiliary catalysts and performing multiple scribing is unnecessary, the present invention still can from scribed lines with specific depth on the CMOS substrate; hence, it provides a more economical and easily operating device and method to scribe CMOS substrates.

Description

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【發明所屬之技術領域】 本發明係有關一種刻劃互補性氧化金屬半導體（CM〇s) 基材之裝置及方法，特別是有關—種利用短波長雷射作為 刻劃放射光源，以形成CM0S基材上之切削刻劃線的刻劃裝 【先前技術】 以晶®(Waf⑷之製程為_前段製造流程與 銜接步驟，因此，CM0S的切割製程確實為 匕Γ幻：Ϊ 7要的一環，而主要的切割製程可分類為直 f切d與先刻劃再切割兩種，其中，先刻劃再切割之製程 .技：刻基= 技術或其他等圖案化 im後’刻割技術逐漸演進為化學性蚀刻 或機械-放射（如：雷射、電襞、離子束、 今：：見的放射刻劃技術。惟，因絕大部分s的半 且隨ί拮r:廳基材在内，均屬於較為脆硬的材料， 材料的脆裂，且不县„丨機械性知作極容易發生 “’若“::=:::因：彳以=:的深度 程，並消耗冗長的製程時間4 ㈣刻製 ^」此運成此目標，而目前TECHNICAL FIELD OF THE INVENTION The present invention relates to an apparatus and method for scribing a complementary oxidized metal semiconductor (CM 〇 s) substrate, and more particularly to using a short-wavelength laser as a scribed radio source to form a CM0S The scribing of the cutting and scribing on the substrate [Prior Art] The process of the Waf (4) is the manufacturing process and the connecting step of the front section. Therefore, the cutting process of the CM0S is indeed a fantasy: a key part of the Ϊ 7 The main cutting process can be classified into two types: straight f-cut d and first scribing and then re-cutting. Among them, the process of first scribing and then cutting. Technology: engraving = technology or other patterning im after the 'cutting technology gradually evolves For chemical etching or mechanical-radiation (such as: laser, electric sputum, ion beam, I: see the radio scribing technique. However, because most of the s is half and with ί: hall substrate They are all brittle and hard materials, the material is brittle, and it is not easy for the county to be mechanically known as "If"::=::: Because: 彳 to =: depth, and consumes lengthy Process time 4 (four) engraving ^" this is the target, and currently

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市場中常使用的放射技術，無論是與過去的機械技術咬曰 -化學蝕刻技術相比，不但可在高的製程良率下獲得車交^ = 良的刻劃線品質，更可縮短製程所需的時間。 乂 '月 、刻劃線的邊緣因雷射能量不足而呈現不規則 \ 而在放射技術中最常採用的仍以雷射作為能量來源， 常見的有以光熱（phot0thermal )加工機制進行刻書彳之技 術，此技術採用之雷射源為波長較長之紅外線^ ^，常 的有C02雷射（波長約為10· 6微米）、Nd:YAG雷射（波長^為 1.064微米），其雷射係衝擊於CM〇s基材上以加熱熔融所'·接 觸之材料，使得材料經由固態、液態、氣態的轉換而形 麝刻劃線。然在脆硬的材料（如CM〇s基材）上進行加埶，办 造成材料產生並且，由於長波長之雷射能^較$， '在進行較微細的刻劃製程時，需要較長的操作時間，且心 易出現刻劃線深度不足或不均一的情形，更: 玄il當||綠66 4喜祕m^ A曰_ _ 、_ ^ W ^ ’本創作係針對上述之問題， 糾之波浪狀。 ’提出一種 有鑑於此， 長雷射刻劃互補性氲北金屬半導體（CMOS)基材 以有效解決習知技術困擾。 之震置及方Radiation technology commonly used in the market, compared with the past mechanical technology bite-chemical etching technology, not only can obtain the quality of the scribe line at a high process yield, but also shorten the process requirements. time.乂 'Month, the edge of the scribe line is irregular due to insufficient laser energy. The most commonly used in radiology is laser as the energy source. The common method is to use the photothermal (phot0thermal) processing mechanism. The technology, the laser source used in this technology is a longer wavelength infrared ^ ^, often with a C02 laser (wavelength of about 10. 6 microns), Nd: YAG laser (wavelength ^ is 1.064 microns), its thunder The projecting system impinges on the CM〇s substrate to heat and melt the material to be contacted, so that the material is scribed by solid state, liquid state, and gaseous state. However, it is twisted on a brittle material (such as CM〇s substrate), which causes the material to be produced and, because of the long-wavelength laser energy, it takes longer to perform a finer scribing process. The operation time, and the heart is prone to insufficient or uneven depth of the scribe line, more: Xuan il when || green 66 4 secret secret m ^ A 曰 _ _, _ ^ W ^ ' This creation is for the above problems , correcting the waves. In view of this, long laser scribes complementary North Korean metal semiconductor (CMOS) substrates to effectively solve the conventional technical problems. Shock and square

本發明之另一 目的，係在提供一 短波長雷射作為雷射源，取代角 免製程中大量熱能產生之困擾。 #人队田牙r別劃互 方法，其係使用 加工機制，以避 種短波長雷射刻劃互 1259595 五、發明說明（3) 補性氧化金屬半導體（CMOS)基材之裝置及方法，其係使用 •能量較高的短波長雷射作為雷射源，以使刻劃在CM〇s基材 上之刻劃線之深度足以滿足後續製程之要求。 本發明之再一目的，係在提供一種短波長雷射刻劃互 ，，氧化金屬半導體（CM0S)基材之裝置及方法，其係使用 能s較高的短波長雷射作為雷射源，以提昇刻劃於⑶⑽基 材上之刻劃線具有較高之精度與解析度。 本發明之又一目的，係在提供一種短波長雷射刻劃互 補性氧化金屬半導體（CM0S)基材之裝置及方法，直係. 卜能量較高的短波長雷射作為帝射瑪 八 基材所需之製程^m以有效縮短刻劃圖 、為，到上述之目的，本發明提供一種短波長 互補性乳化金屬半導體（CM0S)基材之裝置及方，孫二里 .CMOS基材置放於工作平台上，糸將 用波長介於15。-奈米之短波長雷射V::導式Λ定，利 引至工作平台上，在視訊系統對工作平台與予置導於^系統導 CMOS基材預设之刻劃線圖樣進行定位 上之 I控制。 口表私之作動進行 底下藉由具體實施例配合所附的 ‘ ％ 容易瞭解本創作之目的、技術内容、特i =加說明，當更 效。 及其所達成之功 【實施方式 第7頁 1259595 五、發明說明（4) 本發明係有關於短波長雷射刻劃互補性氧化金屬半導 •體（CMOS)基材之裝置及方法，所應用之短波長雷射源之波 長範圍介於1 50-400奈米，係為利用光離子化（ph〇t〇 — ionization)之原理，藉由光子打斷所接觸材料之化學 鍵’造成材料離子化後形成電漿逸去而脫離源材料之本 體。因此’雖用硬於脆硬之材料上（如CM〇s基材），但因脫 除之材料並未受熱作用而汽化，重鑄（recasting)、裂縫 均可大量減少，使加工之精度與解析度大幅提昇。又因為 此種技術在雷射進行衝擊時，無伴隨著明顯大量熱能的生 |成，故又稱作雷射的冷加工（C0ld machining or heatless machining)。本發明之詳細實施例將詳述於 _卜- 〇 请參考第一圖所示，其係為本發明所提供的短波長雷 •射刻劃互補性氧化金屬半導體CCM0S)基材之裝置，包含 工作平㈣，其上設有-真空吸附裝置12，係用以=有 CMOS基材14，此CMOS基材14厚度係介於至5〇〇〇微米 間，並設有視訊系統，其包含有一上方視訊系統16與一下 方視訊系統18，分別設於工作平台1〇的上方、下方，且經 過第一反射鏡28與第二反射鏡3 〇修正其工作光路徑後，同 時f工作平台10進行監控以對其♦作水平之調整與定位，波 長靶圍介於150至400奈米、頻率範圍在1〇至8〇千赫之一短 波長雷射22首先經過光學導光系統2〇，再藉由第三反射鏡 3=將短波長雷射22反射至可調式z軸接物鏡24後係進入工 4平口 1 0而上述之所有操作介面係整合於單一電腦2 6Another object of the present invention is to provide a short-wavelength laser as a laser source in place of a large amount of thermal energy in the process. #人队田牙 r 划 互 , , , r r r r r r r r r r r r r r r 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 It uses a short-wavelength laser with higher energy as the laser source, so that the depth of the scribe line on the CM〇s substrate is sufficient to meet the requirements of subsequent processes. Still another object of the present invention is to provide a short-wavelength laser-etched, oxidized metal-semiconductor (CMOS) substrate device and method using a short-wavelength laser with a high energy s as a laser source. The scribe line marked on the (3) (10) substrate has a higher precision and resolution. Still another object of the present invention is to provide a device and method for short-wavelength laser scribing of a complementary metal oxide semiconductor (CMOS) substrate, a direct system of high-power short-wavelength lasers as a zebra The process required for the material is to effectively shorten the scribe view, and for the above purpose, the present invention provides a device and a side of a short-wavelength complementary emulsified metal semiconductor (CMOS) substrate, Sun Erli. CMOS substrate Placed on the work platform, the wavelength will be between 15. -Nylon's short-wavelength laser V::guided stipulation, which is introduced to the working platform. The video system is positioned on the working platform and the pre-guided CMOS substrate preset scribe line pattern. I control. The private operation of the oral form is carried out by the specific embodiment with the attached ‘% easy to understand the purpose of the creation, technical content, special i = plus instructions, when more effective. And the work achieved by the method [Embodiment 7th page 1259595 V. Description of the invention (4) The present invention relates to a device and method for short-wavelength laser scribing of a complementary oxidized metal semiconductor body (CMOS) substrate. The short-wavelength laser source used has a wavelength range of 1 50-400 nm. The principle of photoionization is used to break the chemical bond of the contacted material by photons. After the formation, the plasma is formed to escape from the body of the source material. Therefore, although it is harder than a hard and brittle material (such as CM〇s substrate), since the removed material is not vaporized by heat, recasting and cracking can be greatly reduced, so that the precision of processing and The resolution has increased dramatically. And because this technology is not accompanied by a significant amount of thermal energy when it is impacted by a laser, it is also called C0ld machining or heatless machining. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed embodiments of the present invention will be described in detail with reference to the first drawing, which is a device for the short-wavelength Ray-ray etched complementary metal oxide semiconductor CCM0S substrate provided by the present invention, including Working flat (four), which is provided with a vacuum adsorption device 12 for = CMOS substrate 14, the thickness of the CMOS substrate 14 is between 5 〇〇〇 micrometers, and is provided with a video system, which comprises a The upper video system 16 and the lower video system 18 are respectively disposed above and below the working platform 1〇, and after the first mirror 28 and the second mirror 3 are corrected for the working light path, the f working platform 10 performs The monitoring is adjusted and positioned horizontally. The short-wavelength laser with a wavelength target range of 150 to 400 nm and a frequency range of 1 to 8 kHz is first passed through the optical light guiding system 2, and then By the third mirror 3=reflecting the short-wavelength laser 22 to the adjustable z-axis objective lens 24, the system enters the flat 4 of the work 4 and all the above-mentioned operation interfaces are integrated into a single computer 2 6

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. 在了 體（CMOS) 程圖，係 (CMOS)基 於工作平 之；接著 系統1 8同 1 0之位置 丨的Θ角度 上之預設 介面上提 工作平台 射2 2，使 基材14上 維持時間 則此短波 量密度， 之切削刻 將自動停 射源完全 空吸附裝 最終所得 其他類似 :本發明之短波長雷射刻劃互補性氧化金屬半導 二：之裝置後’請同時參考第二圖所示之操作流 砰、’〔本短波長雷射刻劃互補性氧化金屬半導體 材之方法，首先如步驟S2所示，置放CM〇s基材Η 台10之真空吸附裝置12上，並開啟真空以固定 =步驟S4所示1用上方視訊系統16與下方視訊 時以CMOS基材1 4上之預設刻劃線圖樣、工作平台 為參考，進行監控與比對，用以調整工作平台1 〇 之定位’使工作平台丨〇之移動得以與CM〇s基材工4 刻劃線圖樣一致；接續以步驟S6，於電腦26控制 供X-Y軸之移動長度，以及刻劃線間之間距作為 10作動之參數；再接續以步驟S8，啟動短波長雷 此短波長雷射22依據指定的工作光路徑到達⑽⑽ ，以進行刻劃，當此短波長雷射22之脈波係持續 達到10-40微秒，且光點尺寸介於1〇-3〇微米時， 長雷射22可在每平方公分上產生4〇 — 1〇〇焦耳之能 並且在CMOS基材14上可形成深度為iq至15〇微米 劃線，元成刻劃後’於步驟S1 〇中所示，電腦2 6 止裝置作動並關閉此短波長雷射22 ;最後，待雷 停止，如步驟S1 2所示，關閉工作平台丨〇上之真 置1 2，並小心地取出以完成刻劃之CMOS基材1 4， 到具有刻劃線之CMOS基材14，再經過裂片製程或 之切割製程後，即可獲得複數之CMOS晶粒，以接In the body (CMOS) process diagram, the system (CMOS) is based on the work level; then the system 18 and the position of the 丨 at the Θ angle of the preset interface lift the work platform to shoot 2 2, so that the substrate 14 The maintenance time is the short-wave density, and the cutting will automatically stop the source completely empty. The final result is similar: the short-wavelength laser of the present invention scribes the complementary oxidized metal semiconducting two: after the device, please refer to the same The operation flow shown in FIG. 2, '[This short-wavelength laser scribes a complementary oxidized metal semiconductor material, firstly, as shown in step S2, the CM 〇 substrate 10 is placed on the vacuum adsorption device 12 And the vacuum is turned on to be fixed = step S4 is shown. 1 uses the upper video system 16 and the lower video to use the preset scribe line pattern on the CMOS substrate 14 and the working platform as a reference for monitoring and comparison for adjustment. Positioning of the working platform 1 ' 'Move the movement of the working platform to be consistent with the CM 〇s substrate 4 scribe line pattern; continue with step S6, the computer 26 controls the movement length for the XY axis, and the scribe line The distance between them is used as a parameter of 10 actuations; Then, in step S8, the short-wavelength laser is activated, and the short-wavelength laser 22 reaches (10) (10) according to the specified working light path to perform scribing, and the pulse wave system of the short-wavelength laser 22 continues to reach 10-40 microseconds, and When the spot size is between 1 〇 and 3 〇 microns, the long laser 22 can produce 4 〇 1 〇〇 joules per square centimeter and can form a depth of iq to 15 〇 micron on the CMOS substrate 14. After the line is marked, in step S1 ,, the computer 26 stops the device and turns off the short-wavelength laser 22; finally, the mine stops, as shown in step S1 2, the working platform is closed. The CMOS substrate 14 is removed and carefully removed to complete the scribed CMOS substrate 14 to the CMOS substrate 14 having the scribe line, and then subjected to a dicing process or a dicing process to obtain a plurality of CMOS dies. To pick up

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五、發明說明（6) 續進行封裝製程。 因此，本發明所提 屬半導體（CMOS)基材之 之高功率特性，可快速 程時間，且使刻劃線具 並且應用光離子化原理 熱能生成，更有效提高 惟以上所述之實施 實施例說明本發明之特 f解本發明之内容並據以 範圍。舉凡運用本發明 特徵及精神所為之均等 請專利之範圍内。 供之短 裝置及 、精準 有一定 之雷射 製程良 例僅為 點，其 實施， 中請專 變化及 波長雷 方法， 地刻劃 深度足 冷加工 率、降 本發明 目的在 並非用 利範圍 修飾， 射刻劃 由於矛|J 脆硬之 以承受 方法， 低整體 之較佳 使熟習 以局限 所述之 皆應包 互補性氧化金 用短波長雷射 材料，縮短製 接續之製程， 避免了大量的 製程之成本。 實施例，藉由 該技術者能暸 本發明實施之 構造、形狀、 括於本發明申V. INSTRUCTIONS (6) Continued packaging process. Therefore, the high power characteristic of the semiconductor (CMOS) substrate of the present invention can be used for fast time, and the scribing tool is applied and the thermal energy generation of the photoionization principle is applied, and the embodiment described above is more effectively improved. The invention is described in terms of the scope of the invention. Any application of the features and spirit of the present invention is within the scope of the patent. The short device and the precise laser process are only a few points. In the implementation, the special change and the wavelength thunder method, the depth of the foot cold processing rate, and the purpose of the invention are not modified. The scribe is due to the spear|J is hard to withstand the method, and the lower overall is better for the short-wavelength laser material which is complementary to the oxidized gold, which shortens the manufacturing process and avoids a large number of The cost of the process. The embodiment, the structure, the shape, and the invention of the present invention can be implemented by the skilled person.

第10頁 1259595 圖式簡單說明 【圖式簡單說明】 第一圖為本發明之裝置結構示意圖。 第二圖為本發明在刻劃互補性氧化金屬半導體（C Μ 0 S)基材 _之方法之操作流程示意圖。 【主要元件符號說明】 10 工作平台 12 真空吸附裝置 14 CMOS基材 16 上方視訊系統 18 下方視訊系統 20 光學導光系統 |β2 短波長雷射 24 可調式Z軸接物鏡 26 電腦 28 第一反射鏡 30 第二反射鏡 32 第三反射鏡Page 10 1259595 Brief Description of the Drawings [Simple Description of the Drawings] The first figure is a schematic diagram of the structure of the device of the present invention. The second figure is a schematic flow chart showing the operation of the method for scribing a complementary oxidized metal semiconductor (C Μ 0 S) substrate. [Main component symbol description] 10 Working platform 12 Vacuum adsorption device 14 CMOS substrate 16 Upper video system 18 Lower video system 20 Optical light guiding system | β2 Short-wavelength laser 24 Adjustable Z-axis objective lens 26 Computer 28 First mirror 30 second mirror 32 third mirror

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Claims (1)

12595951259595 fJ ^ ^ ^ ^ ^ 1 ^ f ^(cm〇S) ^ .二二台，其上係設有一真空吸附裝置，用以固定- 一短波長雷射，其脈波波長係介於15〇_4〇〇奈米，係 刻劃該CMOS基材表面上之切削刻劃線； “ 一光學導光系統，係用以引導該短波雷射至該工作平台之 上表面； 以及 視訊系、、’先以對5亥工作平台的作動進行監控與調整。 、如申請專利範圍第1項所述之短波長雷射刻割互補性氧 化金屬半導體（CMOS)基材之裝置，其中，該短波長雷之 頻率係介於10-80千赫。 3、如申請專利範圍第丨項所述之短波長雷射刻劃互補性氧 •化金屬半導體（CMOS)基材之裝置，其中，該短波長雷射之 脈波係持續維持時間達到1 0 _ 4 0微秒，且該短波雷射光點 尺寸；I於10-30微米時，則該短波長雷射在每平方公分1 所產生之能量密度介於4〇 — 1 〇〇焦耳。 4、 如申請專利範圍第1項所述之短波長雷射刻劃互補性 _化金屬半導體（CMOS)基材之裝置，其中，該CMOS基材厚声 範圍係介於1 00-5000微米。 ^ 5、 如申請專利範圍第1項所述之緝波長雷射刻劃互補性^ 化金屬半導體（CM0S)基材之裝置，其中，該CM〇s基材之^ 削刻劃線深度範圍係介於1 〇 -1 5 0微米。 如申請專利範圍第1項所述之短波長雷射刻劃互 1259595 六、申請專利範圍 化金屬半導體（CMOS)基材之裝置，其中，該工作平台係具 有可移動之X - γ軸及可轉動之Θ角度。 ' 7如申明專利範圍第1項所述之短波長雷射刻劃互補性氧 化金屬半導體（CMOS)基材之裝置，其中，該視訊系統係包 含一上方視訊系統與一下方視訊系統，分別沿該工作平台 上方、下方，以監控該工作平台與置於其上之該⑶⑽基材 表面上的圖形，作為調整該工作平台轉動6>角度之依據，、 使其與固定於其上之該CM0S基材得以作水平之對準。 8、 如申請專利範圍第1項所述之短波長雷射刻劃互補性氧 化金屬半導體（CMOS)基材之裝置，其中，使用複數反射鏡 以輔助引導工作光路徑到達該“⑽基材之上表面。 9、 如申請專利範圍第1項所述之短波長雷射刻割互補性氧 化金屬半導體（CMOS)基材之裝置，其中，該光學導光系統 .與該工作平台間係設有一可調式Z:轴接物鏡。 、如申請專利範圍第1項所述之短波長雷射刻劃互補性 乳化金屬半導體（CMOS)基材之裝置，其中，該短波長雷射 刻劃互補性氧化金屬半導體（CM〇s)基材之裝置之操作係 制於單一電腦。 φ1 種短波長雷射刻劃互補性氧化金屬半導體（CMOS)基 材之方法，用以刻劃互補性氧化金屬半導:體（CM0S)基材上 之切削刻劃線’其方法包括下列步驟： 安裝^互補性氧化金屬半導體（CM0S)基材於一工作平台 rtn’e，利用設置於該工作平台上之一真空吸附裝置將該 CMOS基材以真空固定； 1259595 六'申請專利範圍 2用一視訊系統對該工作平台進行定位監控，並調整其 .轉動之θ角度以使該工作平台作水平之對準；以及、 2【ΐ Ϊ波長介於150_400奈米之一短波長雷射通過-光 予導光系統’藉由其將該短波長雷射先引導至該工作平Α 之該CMOS基材表面上，以進行刻劃。 σ lj、如申請專利範圍第η項所述之短波長雷射刻劃互補性 軋化，屬半導體（CM0S)基材之方法，其中，該短波長雷射 之頻率係介於10 —80千赫。 1 j、如申請專利範圍第丨丨項所述之短波長雷射刻劃互補性 _化金屬半導體（CMOS)基材之方法，其中，該短波長雷射 之脈波係持續維持時間達到10-40微秒，且該短波雷射光 點尺寸介於10-30微米時，則該短波長雷射在每平方公分 上所產生之能量密度介於40-1 00焦耳。 1 4、如申請專利範圍第丨丨項所述之短波長雷射刻劃互補性 氧=金屬半導體（CM0S)基材之方法，其中，該CMOS基材厚 度範圍係介於100-5000微米。 1 5、如申請專利範圍第丨丨項所述之短波長雷射刻劃互補性 氧化金屬半導體（CMOS)基材之方法，其中，該CM0S基材之 ^刀削刻劃線深度範圍係介於1 〇 — 1 5 〇微米。 ’6、如申請專利範圍第u項所述之短::波長雷射刻劃互補性 氧化金屬半導體（CM0S)基材之方法，其中，利用該工作平 台於X — Y軸方向之移動及0角度之轉動，以達成其定位之作 動。 ， 1 7、如申請專利範圍第11項所述之短波長雷射刻劃互補性fJ ^ ^ ^ ^ ^ 1 ^ f ^(cm〇S) ^. Two or two units, which are equipped with a vacuum adsorption device for fixing - a short-wavelength laser with a pulse wavelength of 15 〇 4〇〇 nano, which is a scribe line on the surface of the CMOS substrate; “an optical light guiding system for guiding the short-wave laser to the upper surface of the working platform; and the video system, ' Firstly, the device is monitored and adjusted by the operation of the 5 hai working platform. The short-wavelength laser etched complementary oxidized metal semiconductor (CMOS) substrate device as claimed in claim 1, wherein the short-wavelength ray The frequency is between 10 and 80 kHz. 3. The short-wavelength laser-scribed complementary oxygen-alloyed metal-semiconductor (CMOS) substrate device as described in the scope of the patent application, wherein the short-wavelength Ray The pulse wave system lasts for 10 0 _ 40 microseconds, and the short-wave laser spot size; when I is 10-30 microns, the energy density of the short-wavelength laser is 1 per square centimeter. 4〇—1 〇〇焦耳. 4. Short-wavelength laser scribe as described in item 1 of the patent application. A CMOS substrate having a thick sound range of from 100 to 5000 microns. ^ 5. A device for complementing a metal-semiconductor (CMOS) substrate, wherein the CM s substrate has a scribe line depth ranging from 1 〇 to 150 μm. The short-wavelength laser scribes each other 1259595. 6. A device for patent-scoped metal-titanium (CMOS) substrate, wherein the working platform has a movable X-γ axis and a rotatable Θ angle. The device of claim 1, wherein the video system comprises an upper video system and a lower video system, respectively, along the working platform Above and below, to monitor the working platform and the graphic on the surface of the (3) (10) substrate placed thereon as a basis for adjusting the rotation angle of the working platform, and to enable the CMOS substrate to be fixed thereon Align the level. 8. A device for short-wavelength laser scribing of a complementary metal oxide semiconductor (CMOS) substrate as described in claim 1 wherein a plurality of mirrors are used to assist in guiding the working light path to the "(10) substrate. Upper surface. 9. The apparatus of claim 1, wherein the optical light guiding system and the working platform are provided with an adjustable Z. : Axis objective lens. The device of claim 1, wherein the short-wavelength laser scribes a complementary oxidized metal semiconductor (CMOS) substrate The operation of the device is made in a single computer. Φ1 short-wavelength laser scribing method for complementing a oxidized metal semiconductor (CMOS) substrate for scribing a complementary oxidized metal semiconducting body: a scribe line on a substrate (CMOS) substrate, the method comprising the following steps : mounting a complementary metal oxide semiconductor (CM0S) substrate on a working platform rtn'e, using a vacuum adsorption device disposed on the working platform to vacuum the CMOS substrate; 1259595 6' application patent range 2 A video system performs positioning monitoring on the working platform, and adjusts its θ angle of rotation to make the working platform horizontally aligned; and 2 [ΐ Ϊ wavelength between 150_400 nm and one short-wavelength laser passes through - The light is directed to the light guiding system by which the short wavelength laser is first directed onto the surface of the CMOS substrate of the working plate for scoring. σ lj, the short-wavelength laser scribe complementary winding according to the claim n, is a semiconductor (CMOS) substrate method, wherein the short-wavelength laser has a frequency of 10 - 80 thousand He. 1 j. The method of short-wavelength laser-engraving complementary metal-based semiconductor (CMOS) substrate according to the above-mentioned patent application, wherein the short-wavelength laser wave system lasts for 10 times -40 microseconds, and the short-wavelength laser spot size is between 10 and 30 microns, and the short-wavelength laser produces an energy density of 40-1 00 joules per square centimeter. A method of short-wavelength laser-engraved complementary oxygen=metal-semiconductor (CMOS) substrate as described in the scope of the patent application, wherein the CMOS substrate has a thickness ranging from 100 to 5000 μm. 1 . The method of claim 1, wherein the CMOS substrate has a method of marking a complementary oxidized metal semiconductor (CMOS) substrate, wherein the CMOS substrate has a range of depths. At 1 〇 — 1 5 〇 micron. '6. Short method as described in the U.S. Patent Application Serial No.:: Wavelength laser lithography of a complementary oxidized metal semiconductor (CMOS) substrate, wherein the movement of the working platform in the X-Y axis direction and 0 is utilized. The rotation of the angle to achieve its positioning. , 1 7. Short-wavelength laser scribe complementarity as described in claim 11 第14頁 1259595 六、申請專利範圍 氧化金屬半 .統中所包含 該工作平台 •之該CMOS基 動之Θ角度 CMOS基材作 18、 如申請 氧化金屬半 系統與該工 台之工作光 19、 如申請 氧化金屬半 ，劃互補性 係由單一電 20 、如申請 氧化金屬半 CMOS基材可 導體（CMOS)基材之方法，其中，利用 之一上方視訊系統與一下方視訊系統 上方、下方同時進行對該工作平台與 材表面上的預設刻劃圖形的監控，依 以調整該工作平台，使其與固定於其 水平之對準。 ' 專利範圍第1 1項所述之短波長雷射刻 導體（CMOS)基材之方法，其令，在談 作平台間，係利用一接物鏡以對進入 路徑，作Z軸方向上的調整。 專利範圍第11項所述之短波長雷射刻 導體（CMOS)基材之方法，其中，該短 氧化金屬半導體（CMOS)基材之方 腦進行控制。 專利範圍第11項所述之短波長雷射刻 導體（CMOS)基材之方法，其中，完成 進行裂片或切割動作以得複數CM〇s 曰曰 該視訊系 ，分別沿 置於其上 據所需轉 上之該 劃互補性 光學導光 該工作平 劃互補性 波長雷射 操作介面 劃互補性 加工之該 粒。Page 14 1259595 VI. Patent application scope Oxidation metal half. The working platform included in this system CMOS substrate CMOS substrate 18, such as the application of oxidized metal semi-system and the work light of the work station 19, For example, when applying for oxidized metal half, the complementarity is determined by a single electric 20, such as a method of applying a oxidized metal semi-CMOS substrate conductive (CMOS) substrate, wherein one of the upper video systems is used above and below the lower video system. Monitoring of the preset scoring pattern on the working platform and the surface of the material is performed to adjust the working platform to be aligned with its level. A method of short-wavelength laser-engraved conductor (CMOS) substrate as described in the scope of the patent, wherein, in the discussion of the platform, an objective lens is used to adjust the Z-axis direction to the entry path. . The method of claim 11, wherein the short-wavelength metal-semiconductor (CMOS) substrate is controlled by a brain of the short-oxidation metal-semiconductor (CMOS) substrate. The method of claim 11, wherein the performing a splitting or cutting operation to obtain a plurality of CM 〇s 视 the video system, respectively The complementary optical light guide that needs to be transferred is the work of the complementary wavelength laser operation interface to complement the processed particles.