1259120 a7 B7 五、發明説明（） 發明領域· (請先閲讀背面之注意事項再場寫本頁) 本發明係有關於積體電路銅製程的化學機械研磨方 法，特別是有關於利用加入保護用的沖洗溶液，以防止銅 金屬内連線消耗之化學機械研磨方法。 發明背景： 經濟部智慧財產局員工消費合作社印製 隨著積體電路製程的迅速發展’後段多層導體連線製 程越來越受到重視。進入深次微米元件領域，積體電路元 件中元件運算速度的提升一直是各家必爭的要點，同時也 是購買者選擇時的重要訴求。其中’由於金屬連接線所造 成的接觸阻值時間常數（RC Time Constant)延遲現象嚴重 影響元件操作的速度，其改善方法之一係為選用低電阻的 金屬材料來做為金屬連線結構。其中，由於銅金屬本身具 有許多優勢，例如：（1)低電阻：銅金屬的電阻值約為1.6 7 // Ω -cm，較金金屬為低。（2)抗電性遷移能力佳：銅金屬 約為鋁金屬的3 0倍至1 00倍。（3)良好的熱導性。再加上 可以化學氣相沈積與電鍍的方式長成，因此’銅製程已漸 成為各積體電路廠所採用的製程。 但是，銅金屬的一些化學性質卻限制了銅製程在積體 電路上的發展，例如：（1)銅金屬在約2 0 〇 C的低溫下極易 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) 1259120 A7 B7 五、發明説明（ 與許夕元素反應，例如與矽或矽基材反應，形成如ChSi 的化合物於積體電路結構中，而造成元件失效。（2)銅金屬 無法像ί呂金屬—樣生成自我保護的氧化層，因此容易氧化 與腐# ’而影響金屬連線的導電穩定性。（3)銅金屬與介電 層的附著性不.良，使得積體電路中薄膜結構之機械強度不 足。（4)鋼原子具有快速的擴散性，在電場的加速下，銅原 子&牙透介電層而快速的擴散，尤其一旦銅原子擴散至矽 基材中會引入深層能階受體（Deep Level Acceptor)，造成 70件的特性退化與失效。（5)銅之_素氣體在電漿中的蒸氣 壓很低不易以反應性離子姓刻（ReactiveIonEtching)等乾 触刻方式’來製作細微線路圖樣。而現在，由於材料與製 程技術的進步，各種阻障層不斷被研究，加上雙金屬鑲嵌 乂权〃化予機械研磨技術的成功’而使得上述的問題被解 決0 (請先閲讀背面之注意事項再填寫本頁} *\π 積體電路係將特定電路所需的各種電 經濟部智慧財產局員工消費合作社印製 *» 丹冰紛 縮小製作在微小晶片面積上的一種電子產品。當積體電路 的積集度增加，使得晶片的表面無法提供足夠的面積來製 作所需的内連線時，多層金屬層的設計便逐漸成為許多積 體電路所必須採用的方式。各層金屬層間，再利用金屬連 線結構，例如插塞或介層窗，來達到彼此串連的目的，以 成為一個完整的迴路。而為了不讓各層金屬層間除了有插 塞外的結構相互接觸而發生短路，可利用介電材料所構成 線 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公楚) 1259120 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 的内金屬介電層來加以隔離。第1圖所繪示為一般積體電 路元件，其中一層銅金屬内連線層之上視圖。請參照第1 圖，介電層10中的斜線部分係代表積體電路中的其中一層 的銅金屬内連線’由於元件的設計不同，各銅金屬内連線 的長度與形狀也不盡相同。 經濟部智慧財產局員工消費合作社印製 由於銅金屬具有易氧化與腐蝕的缺點，當銅製程的化 學機械研磨步驟進行時，所給予的能量會加速表面銅金屬 與其他材料間電化學反應的進行。另外，銅金屬的製造係 依序將阻障層與銅金屬層沈積於開口中與介電層上，再利 用化學機械研磨步驟來去除超出介電層表面的多餘阻障層 與鋼金屬層。當部分銅金屬層去除後，即暴露出阻障層的 表面，由於阻障材料的阻值大於銅金屬材料的阻值，而使 化學機械研磨步驟後’兩者間的介面形成電荷累積，亦可 能促成電化學反應的進行。電化學反應的進行，會使得暴 露於開口表面的銅金屬表面發生凹陷（Recess)、腐蝕 (C〇rrosi〇n)或消耗（Consumption)與凹陷現象。這些情況尤 其在連接較長金屬導線的插塞表面、或具有較多層的金屬 内連線結構的表面上較容易發生。以第1圖為例，連接在 銅金屬内連線12、銅金屬内連線14、與銅金屬内連線16 4較長導線上的插塞或導線結構’其表面會較容易發生消 耗與凹陷現象。如此一來，由於不預期的電化學反應進行， 即因為銅金屬的腐蝕現象降低了導電穩定性，影響積體電 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 1259120 A7 ________ B7^ 五、發明説明（） 路元件的品質。 (請先閲讀背面之注意事項再填寫本頁) 發明目的及概述： 鑒於上述之發明背景中，習知技術導致不預期電化學 反應的缺點’因此’本發明的目的之〆係提供一種鋼製程 之化學機械研磨方法，可改盖習知化學機械研磨製程後， 容易造成銅金屬内連線層表面的凹陷、消耗與腐蝕現象。 本發明的另一目的係提供一種銅製糕之化學機械研磨 方法’可應用現有之化學機械研磨設備，僅需改變其中的 處理程式，不需另外進行製程步驟，即町達到本發明預期 的改善效果。 經濟部智慧財產局員工消費合作社印製 根據以上所述之目的，本發明銅製程之化學機械研磨 方法包括：提供具有鋼金屬内連線之晶圓，此晶圓之結構 包括·基材、位於基材上具有數個開口的介電層、位於介 電層上的阻障層、以及位於阻障層上並覆蓋開口的銅金屬 層’進行一第一化學機械研磨步驟，藉以去除位於介電層 表面之部分銅金属層，並形成銅金屬内連線結構；進行一 第一沖洗步驟’係利用電荷清除化學液（Electra Clean Chemicals)沖洗晶圓，藉以釋放銅金屬内連線的表面電荷； 進行第二沖洗步驟，係利用防蝕溶液沖洗晶圓，藉以保護 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 1259120 A7 B7 五、發明説明（） 銅金屬内連線之暴露表面；進行一第二化學機械研磨步 驟，藉以去除位於介電層表面之部分阻障層。本發明銅製 程之化學機械研磨方法中，上述之電荷清除化學液係為由 一檸檬酸（Citnc Acid)於一純水（D丄Wate〇中混合而成的 #檬酸水溶液’而上述之防姓溶液係由一苯并*** (BenzotrUzole ; BTA)於一純水中混合而成的一苯并***水 溶液。另外，本發明更可在上述第二化學機械研磨步驟之 後再利用同樣的防蝕溶液沖洗晶圓，而後續進行例如消除 刮痕的其他化學機械研磨步驟時以達到再次保護的效果。 在本發明較佳實施例中，利用濃度介於約15%至約3〇 %之間的檸檬酸水溶液、以及濃度介於約〇〇2%至約〇1 %之間的苯并***水溶液分別進行第一沖洗步驟與第二沖 洗步驟，在使上述兩溶液的流量介於3〇〇sccm至約4〇〇sccm 之間，對晶圓沖洗約10秒至約2〇秒的情況下，可使銅金 屬内連線表面之電荷釋放與防蝕達到較佳的效果。 ..............^- (請先閲讀背面之注意事項再填寫本頁) 訂- 線一 經濟部智慧財產局員工消費合作社印製 荷累面元 電荷表得 。 為電的使件 因的料，元 可間材此路 ， 料屬如電 法材金。體 方障鋼耗積 磨阻於消的 研與而與好 械料入蝕良 機材加腐質 6 學屬的被品 化金 液屬得 之銅溶金獲 程放蝕銅可 製釋防止而 鋼而於防， 明洗由而定 發沖更，穩 本的，膜性 用液外護電 應溶 另保導 除，成的 清積形件1259120 a7 B7 V. INSTRUCTIONS () Field of the Invention (Please read the following notes on the back page) This invention relates to the chemical mechanical polishing method for the copper process of integrated circuits, especially regarding the use of protection. A chemical mechanical polishing method that flushes the solution to prevent copper metal interconnects from being consumed. Background of the Invention: Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the consumer cooperatives. With the rapid development of the integrated circuit process, the multilayer conductor connection process in the latter stage has received more and more attention. In the field of deep sub-micron components, the increase in component operation speed in integrated circuit components has always been a major point of competition, and it is also an important appeal when buyers choose. Among them, the delay of the contact resistance time constant (RC Time Constant) caused by the metal connection line seriously affects the speed of operation of the component. One of the improvement methods is to select a low-resistance metal material as the metal wiring structure. Among them, copper metal itself has many advantages, such as: (1) Low resistance: The resistance of copper metal is about 1.6 7 // Ω -cm, which is lower than that of gold metal. (2) Good resistance to electrical migration: Copper metal is about 30 to 100 times that of aluminum metal. (3) Good thermal conductivity. In addition, it can be grown by chemical vapor deposition and electroplating, so the 'copper process has gradually become the process adopted by various integrated circuit factories. However, some of the chemical properties of copper metal limit the development of copper processes on integrated circuits, for example: (1) Copper metal is very easy to use at the low temperature of about 20 ° C. The Chinese National Standard (CNS) A4 is applicable. Specification (210x297 mm) 1259120 A7 B7 V. INSTRUCTIONS (Reacting with the element of Xun, for example, reacting with a ruthenium or ruthenium substrate to form a compound such as ChSi in an integrated circuit structure, causing component failure. (2) Copper Metal can't form a self-protecting oxide layer like ί吕 metal, so it is easy to oxidize and rot #' and affect the electrical stability of metal wiring. (3) The adhesion of copper metal to dielectric layer is not good, so the product The mechanical strength of the film structure in the bulk circuit is insufficient. (4) The steel atom has a rapid diffusivity, and the copper atom & the dielectric layer diffuses rapidly under the acceleration of the electric field, especially once the copper atom diffuses to the germanium substrate. Deep Level Acceptor is introduced, which causes 70 characteristics degradation and failure. (5) The vapor pressure of copper-based gas in plasma is very low and it is not easy to reactive IonEtching. Wait The touch-cutting method is used to make fine circuit patterns. Now, due to the advancement of materials and process technology, various barrier layers have been continuously researched, and the success of the two-metal inlays and the mechanical grinding technology has made the above problems. Resolved 0 (please read the notes on the back and fill out this page) *\π The integrated circuit is required to print the various electrical and economic departments of the Ministry of Commerce, the Intellectual Property Bureau, and the Consumer Cooperatives. An electronic product on the area of a chip. When the integration of the integrated circuit is increased, so that the surface of the wafer cannot provide sufficient area to make the required interconnection, the design of the multilayer metal layer gradually becomes a plurality of integrated circuits. The method must be adopted. Metal layers, such as plugs or vias, are used to form a complete loop in order to prevent each other from interposing. The structure is in contact with each other and short-circuited. The line size of the paper can be made of dielectric materials. The Chinese National Standard (CNS) A4 specification (210x29) is applicable. 7 public Chu) 1259120 A7 B7 5, invention description () (Please read the back of the note and then fill out this page) the inner metal dielectric layer to isolate. Figure 1 shows the general integrated circuit components, which A layer of copper metal interconnect layer top view. Referring to Figure 1, the diagonal portion of the dielectric layer 10 represents the copper metal interconnect of one of the integrated circuits. 'Because of the different component design, each copper metal The length and shape of the interconnect are not the same. The Ministry of Economic Affairs, the Intellectual Property Bureau, the employee consumption cooperative, printed because the copper metal has the disadvantage of being easily oxidized and corroded. When the chemical mechanical grinding step of the copper process is carried out, the energy given will accelerate. The electrochemical reaction between the surface copper metal and other materials proceeds. In addition, the copper metal is formed by sequentially depositing a barrier layer and a copper metal layer on the opening and the dielectric layer, and then using a chemical mechanical polishing step to remove excess barrier layer and steel metal layer beyond the surface of the dielectric layer. When a part of the copper metal layer is removed, the surface of the barrier layer is exposed, and since the resistance of the barrier material is greater than the resistance of the copper metal material, the interface between the two forms a charge accumulation after the chemical mechanical polishing step. May contribute to the progress of the electrochemical reaction. The progress of the electrochemical reaction causes the surface of the copper metal exposed on the surface of the opening to be recessed, corroded, or consumed and recessed. These conditions are particularly likely to occur on the surface of the plug to which the longer metal wires are connected, or the surface of the metal interconnect structure having more layers. Taking Fig. 1 as an example, the surface of the copper metal interconnect 12, the copper metal interconnect 14, and the copper metal interconnect 16 4 long wire or the wire structure 'will be more likely to be consumed. Depression phenomenon. As a result, due to the unexpected electrochemical reaction, that is, because the corrosion phenomenon of copper metal reduces the conductivity stability, affecting the scale of the integrated paper, the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1259120 A7 ________ B7^ V. Description of the invention () Quality of the road components. (Please read the precautions on the back and then fill out this page.) OBJECTS AND SUMMARY: In view of the above-described background of the invention, the prior art leads to the disadvantage of not expecting an electrochemical reaction. Therefore, the object of the present invention is to provide a steel process. The chemical mechanical polishing method can be modified to cover the surface of the copper metal inner wiring layer after the conventional chemical mechanical polishing process, which is likely to cause depression, consumption and corrosion. Another object of the present invention is to provide a chemical mechanical polishing method for copper cakes. The existing chemical mechanical polishing equipment can be applied, and only the processing program needs to be changed, and no additional processing steps are required, that is, the town can achieve the desired improvement effect of the present invention. . According to the above-mentioned purposes, the chemical mechanical polishing method of the copper process of the present invention comprises: providing a wafer having a steel metal interconnect, the structure of the wafer comprising: a substrate, located a dielectric layer having a plurality of openings on the substrate, a barrier layer on the dielectric layer, and a copper metal layer on the barrier layer covering the opening, performing a first chemical mechanical polishing step to remove the dielectric layer a portion of the copper metal layer on the surface of the layer and forming a copper metal interconnect structure; performing a first rinsing step of rinsing the wafer with Electra Clean Chemicals to release the surface charge of the copper metal interconnect; Perform a second rinsing step to rinse the wafer with an anti-corrosion solution to protect the paper. The Chinese National Standard (CNS) A4 specification (210X297 mm) is applicable. 1259120 A7 B7 5. Inventive Note () The exposed surface of the copper metal interconnect Performing a second chemical mechanical polishing step to remove a portion of the barrier layer on the surface of the dielectric layer. In the chemical mechanical polishing method of the copper process of the present invention, the above-mentioned charge removal chemical liquid is an aqueous solution of citric acid which is a mixture of Citnc Acid and pure water (D丄Wate〇). The surname solution is a solution of monobenzotriazole mixed with monobenzotriazole (BenzotrUzole; BTA) in a pure water. In addition, the present invention can further utilize the same anti-corrosion after the second chemical mechanical polishing step. The solution rinses the wafer while subsequent other chemical mechanical polishing steps, such as eliminating scratches, to achieve the effect of re-protection. In a preferred embodiment of the invention, the concentration is between about 15% and about 3%. The aqueous solution of citric acid and the aqueous solution of benzotriazole having a concentration of between about 2% and about 1% are respectively subjected to a first rinsing step and a second rinsing step, wherein the flow rates of the two solutions are between 3 〇〇 Between sccm and about 4 〇〇sccm, when the wafer is rinsed for about 10 seconds to about 2 sec seconds, the charge release and corrosion resistance of the copper metal interconnect surface can be better achieved. .........^- (Please read the note on the back first) Matters to fill out this page) Order - Line 1 Ministry of Economic Affairs Intellectual Property Bureau employees consumer cooperatives printed the rich surface element charge table. For the electricity of the cause of the material, the yuan can be the material, this is the source of electrical materials Gold. The body barrier steel wear resistance in the research and the good mechanical materials into the corrosion of the good material and the corrosion of the 6 grades of the chemical gold liquid is obtained by the copper-soluble gold obtained by the release of copper can be released Preventing the steel and preventing it, the clearing is determined by the rushing and steadily, and the membranous liquid is protected by the external protection.
1259120 A7 B7 五、發明説明（） 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1圖所繪示為一般積體電路元件，其中一層銅金屬 内連線層之上視圖； 第2圖至第7圖所繪示為本發明銅製程之化學機械研 磨方法的剖面流程圖；以及 第8圖與第9圖所繪示為更可包含於本發明銅製程之 化學機械研磨方法的剖面流程圖。 圖號對照說明： (請先閲讀背面之注意事項再填寫本頁) 、可. 經濟部智慧財產局員工消費合作社印製 10 介電層 12 銅金屬内連線 14 銅金屬内連線 16 銅金屬内連線 50 介電層 52 銅金屬内連線 54 銅金屬内連線 5 6 介電層 58 阻障層 60 開口 62 開口 64 銅金屬材料 66 化學機械研磨步驟 67 銅金屬内連線 68 銅金屬内連線 70 沖洗步驟 72 沖洗步驟 74 化學機械研磨步驟 線一 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 1259120 A7 B7 五、發明説明（） 76 化學機械研磨步驟 發明詳細說明： (請先閲讀背面之注意事項再填寫本頁) 第2圖至第7圖所繪示為本發明銅製程之化學機械研 磨方法的剖面流程圖，本發明以應用於銅金屬内連線的製 來舉例說明。請參照第2圖，第2圖所繪示為已製作一 層銅金屬内連線結構，而要再製造另一層銅金屬内連線結 構的晶圓結構放大示意圖。其中，已製造完成的銅金屬内 連線包含介電層50，與其中的銅金屬内連線54、銅金屬内 連線52，而在此剖面圖中，銅金屬内連線54具有介層窗 結構可與底下的金屬層相互連接。接著，在介電層5〇上形 成介電層56,並於介電層56中形成開口 60與開口 62，此 開口 60與開口 62即為銅金屬内連線的位置所在，其中開 口 62並暴露出銅金屬内連線54，因此後續在開口 62形成 的銅金屬内連線結構可與銅金屬内連線5 4相接。隨後，再 形成阻障層5 8以覆蓋介電層5 6、開口 6 〇與開口 6 2，以防 止銅金屬的擴散現象。 經濟部智慧財產局員工消費合作社印製 接著，請參照第3圖，形成一層銅金屬材料64於阻障 層5 8上，並覆蓋開口 6 0與開口 6 2。隨後’將晶圓送入化 學機械研磨設備中，以進行化學機械研磨步驟66，設定暴 露出阻障層5 8時為研磨終點，將多餘的銅金屬材料64女 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 1259120 A71259120 A7 B7 V. Inventive Description () Brief Description of the Drawings: The preferred embodiment of the present invention will be explained in more detail in the following description with the following figures, wherein: Figure 1 shows the general product. Body circuit component, wherein a layer of copper metal interconnect layer is viewed from above; FIG. 2 to FIG. 7 are cross-sectional flow charts of the chemical mechanical polishing method of the copper process of the present invention; and FIG. 8 and FIG. A cross-sectional flow diagram of a chemical mechanical polishing process that can be further included in the copper process of the present invention. Figure number comparison description: (Please read the note on the back and then fill out this page), can. Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative 10 dielectric layer 12 copper metal interconnect 14 copper metal interconnect 16 copper metal Interconnect 50 dielectric layer 52 copper metal interconnect 54 copper metal interconnect 5 6 dielectric layer 58 barrier layer 60 opening 62 opening 64 copper metal material 66 chemical mechanical polishing step 67 copper metal interconnect 68 copper metal Interconnection 70 Flushing step 72 Flushing step 74 Chemical mechanical polishing step line One paper scale is applicable to China National Standard (CNS) A4 specification (210X297 mm) 1259120 A7 B7 V. Invention description () 76 Chemical mechanical polishing step Detailed description of the invention : (Please read the note on the back and then fill out this page.) Figures 2 to 7 show a cross-sectional flow chart of the chemical mechanical polishing method for the copper process of the present invention, which is applied to copper metal interconnects. System to illustrate. Please refer to FIG. 2, which is a schematic enlarged view of a wafer structure in which another layer of copper metal interconnect structure has been fabricated and another layer of copper metal interconnect is fabricated. Wherein, the completed copper metal interconnect includes a dielectric layer 50, and a copper metal interconnect 54 and a copper metal interconnect 52 therein. In this cross-sectional view, the copper metal interconnect 54 has a via. The window structure can be interconnected with the underlying metal layer. Next, a dielectric layer 56 is formed on the dielectric layer 5, and an opening 60 and an opening 62 are formed in the dielectric layer 56. The opening 60 and the opening 62 are positions of the copper metal interconnection, wherein the opening 62 is The copper metal interconnect 54 is exposed so that the copper metal interconnect structure subsequently formed in the opening 62 can interface with the copper metal interconnect 54. Subsequently, a barrier layer 58 is formed to cover the dielectric layer 56, the opening 6 〇 and the opening 6 2 to prevent diffusion of copper metal. Printed by the Intellectual Property Office of the Ministry of Economic Affairs. Next, please refer to Figure 3 to form a layer of copper metal material 64 on the barrier layer 58 and cover the opening 60 and the opening 62. Then, the wafer is sent to the chemical mechanical polishing equipment for the chemical mechanical polishing step 66, and the polishing end point is set to expose the barrier layer, and the excess copper metal material is applied to the Chinese national standard. CNS) A4 size (210X297 mm) 1259120 A7
五、發明說明（） 經濟部智慧財產局員工消費合作社印製 除。其中，上述銅金屬之化學機械研磨步驟66所使用的設 備、研磨衆成分、與研磨《大小分”，皆可視銅金屬材 料、疋件種類與產品不同而加以選擇，本發明不限於此。 另外由於上述銅金屬之化學機械研磨步驟6 6係為熟悉此 技藝者所已知之技術’故本發明不在此贅述。 接著’請參照第4圖，將多餘的銅金屬材料64去除後， 即形成鋼金屬内連線67與銅金屬内連線68。隨後，進行 沖洗步驟7 〇，利用電荷清除化學液沖洗晶圓。由於電荷清 除化學液為電解質，利用其沖洗晶圓，可帶走晶圓上的電 荷’以釋放上述化學機械研磨步驟66後，在銅金屬内連線 6 7、鋼金屬内連線6 8與阻障層5 8介面間的電荷累積。在 本發明一較佳實施例中’係利用檸檬酸水溶液做為電荷清 除化學液，其較佳成分與組成為：利用檸檬酸與純水調配， 形成濃度15%至30%的檸檬酸水溶液，並利 〜用300sccm至 400sccm的流量’沖洗約10秒至20秒，矸、去 J達到較佳的電 荷清除效果。本發明之沖洗步驟70並不限扒处 个吸於使用檸檬酸水 溶液，其他具有同樣效果的電解質溶液，都 ^可適用在本發 明中，本發明並不限於此。另外，此沖洗步 乂鄉7 〇可應用同 一化學機械研磨設備，可簡化製程步驟，佝士 ☆ ^本發明並不限 於使用於同一設備中。 請參照第5圖，在上述沖洗步驟70後，再進行沖洗步 (請先閱讀背面之注意事項再場寫本頁} 、一叮. 1259120 A7 B7 五、發明説明（） 驟72，利用防蝕溶液來沖洗晶圓，利用防蝕化學物與鋼〃 屬内連線67與銅金屬内連線68表面形成錯二金V. Description of the invention () Printed by the Consumers' Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs. The equipment used in the chemical mechanical polishing step 66 of the copper metal, the polishing component, and the polishing "size" may be selected depending on the copper metal material, the type of the component, and the product, and the present invention is not limited thereto. Since the above-mentioned chemical mechanical polishing step of copper metal is a technique known to those skilled in the art, the present invention will not be described herein. Next, please refer to Fig. 4, after the excess copper metal material 64 is removed, the steel is formed. The metal interconnect 67 is connected to the copper metal interconnect 68. Subsequently, the rinsing step 7 is performed, and the wafer is rinsed with the charge removing chemical liquid. Since the charge removing chemical is an electrolyte, the wafer can be washed to take the wafer away. The charge 'to release the charge accumulation between the copper metal interconnects 67, the steel metal interconnects 68 and the barrier layer 58 interface after the chemical mechanical polishing step 66 is released. In a preferred embodiment of the invention 'Using citric acid aqueous solution as a charge removal chemical liquid, the preferred composition and composition thereof are: using citric acid and pure water to form a citric acid aqueous solution having a concentration of 15% to 30%, and ~ Flush with a flow rate of 300sccm to 400sccm for about 10 seconds to 20 seconds to achieve a better charge removal effect. The rinsing step 70 of the present invention is not limited to the use of an aqueous solution of citric acid, and the others have the same The electrolyte solution of the effect can be applied to the present invention, and the present invention is not limited thereto. In addition, the same chemical mechanical polishing device can be applied to the rinsing step, and the process step can be simplified, the gentleman ☆ It is not limited to use in the same equipment. Please refer to Figure 5, after the above rinsing step 70, then carry out the rinsing step (please read the notes on the back and write this page again), 叮. 1259120 A7 B7 V. Invention Description () Step 72, using the anti-corrosion solution to rinse the wafer, using the anti-corrosion chemical and the steel lining interconnect 67 and the copper metal interconnect 68 surface to form the wrong gold
保護銅金屬材料的保護膜。在本發明一較佳實施例中，C 利用苯并***水溶液做為防蝕溶液，當苯并二 ^ 才一生/f冼於鋼 金屬材料表面時，會進行下列反應：A protective film that protects copper metal materials. In a preferred embodiment of the present invention, C uses an aqueous solution of benzotriazole as an anti-corrosion solution, and when benzo bismuth is formed on the surface of the steel metal material, the following reaction is carried out:
Cu+ + BTA' 一 Cu[BTA] 如此一來，銅金屬進行電化學反應而形成銅離子的逮率將 可被控制。此笨并***水溶液之較佳成分與組成為：利用 苯并***與純水調配，形成濃度〇 〇 2 %至〇 ·丨％的笨并=坐 水溶液’並利用300sccm至400sccm的流量，沖洗約1〇和 至20秒，可達到較佳的防蝕效果。本發明之沖洗步驟^ 並不限於使用苯并***水溶液，其他具有同樣效果的防麵 溶液’都可適用在本發明中，本發明並不限於此。另外， 此沖洗步驟7 2可應用同一化學機械研磨設備，可簡化製程 步驟，但本發明並不限於使用於同一設備中。 接著，請再參照第6圖，在銅金屬内連線6 7與銅金屬 内連線6 8之表面形成保護膜後，即可進行化學機械研磨步 驟74，設定暴露出介電層5 6時為研磨終點，將多餘的1"且 障層5 8去除。上述阻障材料之化學機械研磨步驟74所 .g jtg_ 用的設備、研磨漿成分、與研磨漿大小分佈等’皆< + 障材料、元件種類與產品不同而加以選擇，本發明$ % & 此。另外，由於上述阻障材料之化學機械研磨步驟74係 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) f請先閱讀背面之注意事項再填寫本頁) -訂· 經濟部智慧財產局員工消費合作社印製 1259120 A7 B7 五、發明説明（） 熟悉此技藝者所已知之技術，本發明不在此贅述。如此一 來，即完成第7圖所示之銅金屬内連線之結構。 (請先閲讀背面之注意事項再填寫本頁) 本發明銅金屬之化學機械研磨方法更可在形成第7圖 所示之銅金屬内連線之結構後，再重複進行一次沖洗步驟 72，如第8圖所示，以達到銅金屬内連線67與銅金屬内連 線6 8表面的二次保護效果。另外，本發明更包括如第9圖 所示之化學機械研磨步驟76，可去除介電層上因前次化學 機械研磨步驟所形成的刮痕，由於有第8圖之沖洗步驟72 的保護，更可避免銅金屬材料的腐蝕、消耗與凹陷。 本發明在化學機械研磨製程中，加入電荷消除溶液與 防蝕溶液的沖洗步驟，利用大量溶液的確實沖洗，更可達 到消除電荷與形成防蝕錯合物的功效。因此，利用本發明 銅金屬之化學機械研磨方法所製造的銅金屬内連線結構， 根據利用光學顯微鏡與電子顯微鏡的觀察可得知，確實可 改善銅金屬材料的消耗現象^如此所得之積體電路元件導 電穩定性也較為良好。 經濟部智慧財產局員工消費合作社印製 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)Cu+ + BTA'-Cu[BTA] As a result, the rate of copper metal electrochemical reaction to form copper ions can be controlled. The preferred composition and composition of the stupid and triazole aqueous solution are: using benzotriazole and pure water to form a concentration of 〇〇 2% to 〇·丨% of the stupid = sitting aqueous solution ' and using a flow rate of 300 sccm to 400 sccm, A good anti-corrosion effect can be achieved by rinsing for about 1 Torr and 20 seconds. The rinsing step of the present invention is not limited to the use of an aqueous solution of benzotriazole, and other anti-surface solutions having the same effects can be applied to the present invention, and the present invention is not limited thereto. In addition, this rinsing step 72 can apply the same chemical mechanical polishing apparatus, which simplifies the process steps, but the invention is not limited to use in the same apparatus. Next, referring to FIG. 6, after the protective film is formed on the surface of the copper metal interconnect 6 7 and the copper metal interconnect 68, the chemical mechanical polishing step 74 can be performed to set the dielectric layer 56 to be exposed. For the grinding end point, the excess 1" and the barrier layer 5 8 are removed. The chemical mechanical polishing step 74 of the above-mentioned barrier material is selected according to the equipment, the slurry composition, the slurry size distribution, and the like, and the barrier material, the component type, and the product are selected, and the present invention is $% &; this. In addition, due to the chemical mechanical polishing step 74 of the above-mentioned barrier material, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). f Please read the note on the back and fill in the page. Property Bureau Staff Consumer Cooperatives Printed 1259120 A7 B7 V. INSTRUCTIONS () Familiar with the techniques known to those skilled in the art, the present invention is not described herein. In this way, the structure of the copper metal interconnect shown in Fig. 7 is completed. (Please read the precautions on the back and then fill out this page.) The chemical mechanical polishing method of the copper metal of the present invention can further repeat the rinsing step 72 after forming the structure of the copper metal interconnect shown in FIG. As shown in Fig. 8, the secondary protection effect of the copper metal interconnect 67 and the copper metal interconnect 68 surface is achieved. In addition, the present invention further includes a chemical mechanical polishing step 76 as shown in FIG. 9, which removes scratches formed on the dielectric layer by the previous chemical mechanical polishing step, and is protected by the rinsing step 72 of FIG. Corrosion, consumption and dents of copper metal materials can be avoided. In the CMP process, the rinsing step of adding a charge-eliminating solution and an anti-corrosion solution, and using a large amount of solution to actually rinse, can achieve the effect of eliminating electric charge and forming an anti-corrosion complex. Therefore, the copper metal interconnect structure produced by the chemical mechanical polishing method of the copper metal of the present invention can be seen from the observation by an optical microscope and an electron microscope, and the copper metal material consumption phenomenon can be improved. The circuit components are also relatively good in electrical stability. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention; Equivalent changes or modifications made by the spirit of the invention should be included in the scope of the following claims. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm)