1258074 九、發明說明： 【發明所屬之技術領域】 本發縣提供-種可防止㈣記憶體儲存裝置制複製回费 二，資料錯誤之方法，尤指快閃記憶體所製成之快閃烈意: 二置（Flash memQry)於複製回覆指令時，可 防止賢料發生錯誤之方法。 了了 【先前技術】 古：才二快閃記憶體，自問世以來已以健能非揮發性、耐震、 =存密度等迷人物±，_賴㈣，漸漸取代u 二二池供電的記憶體’更由於目前半導體技術曰益精 、閃施體的儲存密度與傳輸速更是有突飛猛進的成長，因 、閃記憶體在衫應収可以取代硬式 體’由於快閃記憶體有上述之諸多功能與特性，相關 快閃記憶體而發展域閃記憶體儲存裝置（F! a s h m 6 m 〇 r 7) ’且此種快閃記憶體儲存裝置（F 1 a s h ::r( ^物者可將數據得以快繊存在快閃記憶體 記^儲存裝置a(=a=mGry)，从快速地讀取快閃 h mem〇ry)之數據，並且能 ^的攜π麟，細帶來的便雛使它比大部份傳統 =如：硬式磁碟等）具有更 衣置（Flash rn 〇 mem〇ry)自從問世以來即受到廣大消 、、月目“而成為-種幾乎為不可或缺的使用工具。 1258074 然而，此種快閃記憶體儲存裝置（F 1 、λ次刺你认士 Sil memory _:Γ，若遇到一個區塊⑹。c k)做部分資料修 改邮形，會利用區塊複製回覆指令（ 、 進行處理，請參L M py back)來1258074 IX. Description of the invention: [Technical field to which the invention pertains] The present invention provides a method for preventing (4) memory storage device from copying back the fee, and incorrect data, especially the flashing light made by the flash memory. : Flash memQry can prevent errors in the error when copying the reply command. [Previous technology] Ancient: Only two flash memory, since the advent of the life has been non-volatile, shock-resistant, = storage density and other fascinating objects ±, _ Lai (four), gradually replaced the memory of the u two pool power supply 'Because of the current semiconductor technology, the storage density and transmission speed of the flash application body are growing by leaps and bounds, because the flash memory can replace the hard body in the shirt's view. Because the flash memory has many of the above functions. With the characteristics, the flash memory is related to the development of the domain flash memory storage device (F! ashm 6 m 〇r 7) 'and this flash memory storage device (F 1 ash ::r (^ object can put the data It is possible to quickly store the flash memory memory device a (= a = mGry), from the fast reading of the flash h mem 〇 ry) data, and can carry the π lin, the fine bring the mess It has a dressing (Flash rn 〇mem〇ry) than most of the traditional = such as: hard disk, etc. Since its inception, it has been widely used as an indispensable tool for the use of the consumer and the moon. 1258074 However, this kind of flash memory storage device (F 1 , λ times thorns you recognize Sil memory _: Γ, if a block encountered ⑹.c k) to do some data modification Post-shaped, block copy reply command will use (performs processing, see L M py back) to
Flash _不，料跡_記憶體儲存裝置（ h 、mem〇ry)於複製回覆指令U〇py 二=ί圖’由圖中可清楚看出，當快閃記憶體儲存 衣置修改區塊（Μ。e k)部分資 一個新區塊A 2，且將需要修改之次計 才、為先找出 、月^生，且造成資料錯誤的數量超過可_的範圍。 保儲存於快閃記憶體内之資料的完整性，即有相 』錯誤校正法财計算錯誤校正碼龍，處理哭 向快閃記憶體要求資料俚㈣處理裔 多個錯誤的位元，如^日/轉續正碼的值是否有一個或 , 果有錯块的位元，則錯誤校正法便會修正該 ===咖_败崎細無法校正超 有超過錯所成負擔的錯誤資料量，因此，當遇到傳輸資料 、 少 c k )就會被當成壞掉的區塊（b ^ 〇 c k 貝料…去傳輪，造成使用者的不便與系統的不穩定。 1258074 所以為了防止快閃記憶體儲存裝置 mem°m於複製回覆指令（Cqdv h 生之資料錯誤，相關辈去 a c k) a夺所^ c 。者^擇不使用區塊複製回覆指令（ 塊㈤〇 ^ k )，但是，這卻犧牲了這個指令在遇到一個區 點。Ck)做部分資料修改時，資料的移動速度較快的優 是以，要如何讓快閃記憶體儲存褒置（Flash ""ΓΊ!0於使用複製回覆指令（copy back)時 不έ產生貧料錯誤的情形， _ ^ 欲研究改善之方向所在者。卩為攸事此_之_廠商所亟 【發明内容】 由多二=2鐘於上述之問題與缺失，乃搜集相關資料，經 斷1作及％! 從事於此行㈣積之多年經驗，經由不 ==，此射恤___使用複 衣回復b电生資料錯誤之方法的發明專利誕生者。 次主要目的乃在於，利用錯誤校正法則來檢查修改過 ===__贿恤#繼，如有資料錯 = 則將此筆資料以搬移資料指令來處理，否則都以 设衣回覆指令（copy back)來搬移未修改的資 A G E )資料的指令’進而讓蝴記憶體儲存裝置可利用資料的 移動速度較快_塊複如翻令來執行—麵塊做部分資料修 1258074 =動，’以及提高祕之穩定性及:#料之完整性，而讓使用者 、要資料可妥善保存於快閃記憶體儲存裂置。 【實施方式】 *為達成上述目的及魏，本㈣所_之技術手段狀構造 發明之較佳實施例詳加說明其特徵與功㈣^ F請參閱第二圖所示，係為本發明之快閃記憶體儲存裳置（ 1 ash η^ηι。^)於複製回覆指令（c〇m =ck)時之方塊圖’由圖中可清楚看出，該快閃記憶體儲存 J lash memQry)1為設置有複數個區塊（ ，.^ k) 11 ’且各區塊11内為設置有複數個可儲存資料 的貢^(PAGE)12，而各區塊U為連接有緩衝區13 且虽快閃讀體儲存裝置1於複製回覆指令（C 0Py ^ Ck)時’為先將需修改龍的區塊1 1定義絲區塊i ! ㈠再找出—個區塊11並將此區塊11定義為新區塊112， 2快閃讀體儲存裝置i會將不需要修改之資料傳送至緩衝區 心，，再-t讀區1 3將不需要修改之資料寫入新區塊1 1 2内 ^對的I料11 2内’進而完成複製喊指令，且#複製回覆 曰7執仃a畢後，該快閃記憶體儲存妓丨為會讀取新區塊u 二未㈣#料的資料頁1 2，並细錯誤校正法則檢查未修改 、貝料的貝料頁12内所儲存之資料是否有發生資料錯誤，以防 7 7 日修(灵〗正替換頁 1258074 土因使用複製喊指令而造成超過錯誤校正法騎能㈣的錯誤 資料量，而使資料可穩定的傳輸。 、 再請參閱第二、三圖所示’係為本發明之快閃記憶體儲存製 置（Flash mem〇ry)於複製回覆指令衣 b a c k)時之方塊圖及流程圖，由圖中可清楚得知，當本發明 之快問記憶體儲存裝置！於執行複製喊指令時，為依下列步驟 進行： (1 ο 〇)開始， (1 10)複製回覆指令：將需修改資料的區塊1i定義為舊區 塊111，並找出一個區塊11定義為新區塊i i 2 ，再將不需要修改之資料傳送至緩衝區i 3，並由續 衝區13將不需要修改之資料寫人新區塊112内所 相對的資料頁！2内，複製到新區塊112内所 的資料頁12内； 1 (12 0)讀取新區塊1 1pm 丄2内之刖使用複製回覆指令所搬移 ^改過資料的資料頁i 2到㈣記憶體外的緩衝區，· (3 0)彻錯雜正法則檢查快閃記憶體外的緩衝區是否有 產生錯誤貧料，若有，則執行步驟1 4 0 ;若益職 行步驟1 6 0 ; ^ m (1 40)使職移貞料指令來重新再將不需要修改之資料傳送 至快問記憶體外緩衝區，並由快閃記憶體外緩衝區將 Ϊ258074 不需要修改之資料寫入到另一個新區塊113; (15 0)然後將新區塊i i 2執行區段式擦除（BL〇cκ erase)指令； (160)進行下一個指令^^動作。 再者，該錯誤校正法則可為漢明碼（H a _ i n g c〇“）或所羅門碼（Reed s〇1〇m〇n c〇de )或其他錯誤更正碼的方式。 =乂本1明可防止快閃記憶體儲存裝置使用複製回覆指令 發生資料錯誤之方法，為可改善習用之技術關鍵在於利用錯誤核 2法則·查未修改過資料的資料頁内所儲存之資料是否有發生 貝料錯决’以防止快閃記憶體儲存裝置因使用複製回覆指令而造 成資料錯誤的數量超過可細的範圍，進而讓快閃記憶體儲縣 置可利用資料的移動速度較快的區塊複製回覆指令來執行區 物⑽料修改_作，以及提高㈣之穩定性及資料之完整 ’而讓_者的重要資料可妥善保存於_記鐘齡袭置。 為針對本發明—雜佳之可行實施例說明而 ，惟並翻⑽定本㈣之㈣補，凡並 =明所揭示之技藝精神下所完成之均等 均應包含財發騎轉之專·财。 文更 綜上所述，本發明之可防止快閃記憶 付^新祕、創作性及運步性之專利要件，_法提出二 1258074 審委早日賜准本案，以保障發明人之辛苦發明，倘若鈞局有任 何稽疑，請不吝來函指示，發明人定當竭力配合，實感德便。 1258074 【圖式簡單說明】 第一圖為習用快閃記憶體儲存裝置（F 1 a s h m e m〇r y)於複製回覆指令（copy back )時之方塊圖。 第二圖係為本發明之快閃記憶體儲存裝置（F 1 a s h m e m o r y)於複製回覆指令（copy back 時之方塊圖。Flash _ No, trace _ memory storage device (h, mem〇ry) in the copy reply command U 〇 py 2 = ί 图 ' It can be clearly seen from the figure, when the flash memory storage clothing modified block ( Μ.ek) Partially funded a new block A 2, and will need to be modified to determine the first, the first, and the number of data errors exceeds the range of _. To ensure the integrity of the data stored in the flash memory, that is, there is a phase error correction method to calculate the error correction code dragon, to process the crying to the flash memory to request the data 俚 (4) to deal with multiple errors of the bit, such as ^ Whether there is one or the value of the daily/continuous positive code, if there is a bit with the wrong block, the error correction method will correct the === coffee _ _ 崎 细 细 can not correct the amount of error data that exceeds the burden of exceeding the error Therefore, when encountering transmission data, less ck) will be regarded as a broken block (b ^ 〇ck bedding... to pass the wheel, causing user inconvenience and system instability. 1258074 So to prevent flashing The memory storage device mem°m is in the copy reply command (Cqdv h data error, related generation goes to ack) a wins ^ c. The user chooses not to use the block copy reply command (block (5) 〇 ^ k ), however, This sacrifices the instruction to encounter a point. Ck) When doing some data modification, the data movement speed is faster, how to make the flash memory storage device (Flash ""ΓΊ! 0 does not cause poor when using the copy back command (copy back) In the wrong situation, _ ^ want to study the direction of improvement. 卩 攸 此 _ _ _ 亟 厂商 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明And %! Engaged in this line (four) years of experience, through the non-=, this is the birth of the invention patent for the use of retire to reply b electric student data error. The second main purpose is to use the error Correction rule to check the modified ===__brieze # subsequent, if there is data error = then the data will be processed by moving the data instruction, otherwise the unmodified capital will be moved by the copy back command. AGE) The instruction of the data 'in turn allows the memory of the memory storage device to move faster than the data. _ The block is repetitively executed. The partial block is used to repair some information. 1258074 = Dynamic, 'and improve the stability of the secret and: # The integrity of the material, so that the user, the information can be properly stored in the flash memory storage crack. [Embodiment] * In order to achieve the above object and the preferred embodiment of the technical means of the present invention, the features and functions of the invention are described in detail in the fourth embodiment. The flash memory storage shelf (1 ash η^ηι.^) is a block diagram when copying the reply command (c〇m = ck). As can be clearly seen from the figure, the flash memory stores J lash memQry) 1 is a plurality of blocks ( , . . . k k 11 ' and each block 11 is provided with a plurality of servables (PAGE) 12, and each block U is connected with a buffer 13 Although the flash reading storage device 1 copies the reply command (C 0Py ^ Ck), the tile 1 is defined for the block 1 1 to be modified first. (1) Then find the block 11 and the area is Block 11 is defined as a new block 112, 2 flash read storage device i will transfer the data that does not need to be modified to the buffer heart, and then -t read area 13 writes the unmodified data to the new block 1 1 2 Inside the I material 11 2 inside 'and then complete the copy shouting command, and # copy reply 曰7 仃 仃 仃 仃 , , , , , , , , , , , , , , , , , , , , , , , , , , , , #料的资料页1 2, and the fine error correction rule checks whether the data stored in the unmodified, bedding material page 12 has a data error, in case the 7th day repair (Ling) is replacing the page 1258074 Using the copy shouting command to cause the error data amount exceeding the error correction method (4), and the data can be stably transmitted. Please refer to the second and third figures as the flash memory storage system of the present invention. (Flash mem〇ry) block diagram and flow chart when copying the cover back), as can be clearly seen from the figure, when the memory of the present invention is stored! When executing the copy shouting instruction, the following steps are performed: (1 ο 〇) start, (1 10) copy reply instruction: the block 1i to be modified is defined as the old block 111, and a block 11 is found. Defined as the new block ii 2, the data that does not need to be modified is transferred to the buffer i 3, and the data that does not need to be modified is written by the renewing area 13 to the data page in the new block 112! 2, copy to the data page 12 in the new block 112; 1 (12 0) read the new block 1 1pm 丄 2 刖 use the copy reply command to move the data page i 2 to (4) memory Buffer, · (3 0) thoroughly correct the positive law to check whether the flash buffer outside the flash memory has produced errors and poor materials, if any, then perform step 1 4 0; if the benefit line step 1 60 0; ^ m ( 1 40) The job transfer command is used to retransmit the data that does not need to be modified to the buffer memory buffer, and the 258074 unmodified data is written to another new block by the flash memory buffer. (15 0) Then, the new block ii 2 performs a sector erase (BL〇cκ erase) instruction; (160) performs the next instruction ^^ action. Furthermore, the error correction rule can be a Hamming code (H a ingc〇 ") or a Solomon code (Reed s〇1〇m〇nc〇de) or other error correction code. The flash memory storage device uses the method of copying the reply command to generate data errors. The key to improving the technology is to use the error core rule 2 to check whether the data stored in the data page of the unmodified data has been misplaced. In order to prevent the flash memory storage device from using the copy reply command, the number of data errors exceeds the fine range, and the flash memory storage county can execute the block copy reply command of the available data moving speed. The material (10) material modification _ _, and improve (4) stability and completeness of the data', and the important information of the _ person can be properly stored in the _ clock age attack. For the description of the feasible embodiment of the present invention - In addition, (10) the (4) (4) supplement, the equalization of the skill spirit revealed by the Ming and Ming dynasty should include the special wealth of the financial development. The text can further prevent the invention from being fast. Memory to pay for the new secret, creative and moving point of the patent requirements, _ law proposed two 1258074 trial committee to grant this case as soon as possible to protect the inventor's hard invention, if there is any doubts, please do not hesitate to instruct The person will try his best to cooperate with him. 1258074 [Simple diagram of the diagram] The first picture is the block diagram of the conventional flash memory storage device (F 1 ashmem〇ry) when copying the reply command (copy back). It is a block diagram of the copy back command (copy back) of the flash memory storage device (F1 ashmemory) of the present invention.
第三圖係為本發明之快閃記憶體儲存裝置（F 1 a s h m e m o r y)於複製回覆指令（copy back )時之流程圖。 【主要元件符號說明】 1、快閃記憶體儲存裝置 1 1、區塊 1 1 1、舊區塊 1 12、新區塊 12、 資料頁 13、 緩衝區 A、快閃記憶體儲存裝置 A 1、舊區塊 A 2、新區塊 12The third figure is a flow chart of the flash memory storage device (F 1 a s h m e m o y y) of the present invention when copying back. [Description of main component symbols] 1. Flash memory storage device 1 1. Block 1 1 1 , old block 1 12, new block 12, data page 13, buffer A, flash memory storage device A 1, Old block A 2, new block 12