TWI255161B - PCB with high heat conductivity - Google Patents

PCB with high heat conductivity Download PDF

Info

Publication number
TWI255161B
TWI255161B TW93139329A TW93139329A TWI255161B TW I255161 B TWI255161 B TW I255161B TW 93139329 A TW93139329 A TW 93139329A TW 93139329 A TW93139329 A TW 93139329A TW I255161 B TWI255161 B TW I255161B
Authority
TW
Taiwan
Prior art keywords
insulating layer
thermal conductivity
circuit board
high thermal
substrate
Prior art date
Application number
TW93139329A
Other languages
Chinese (zh)
Other versions
TW200626052A (en
Inventor
Ming-Ji Gan
Chien-Min Sung
Shao-Chung Hu
Original Assignee
Kinik Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kinik Co filed Critical Kinik Co
Priority to TW93139329A priority Critical patent/TWI255161B/en
Application granted granted Critical
Publication of TWI255161B publication Critical patent/TWI255161B/en
Publication of TW200626052A publication Critical patent/TW200626052A/en

Links

Landscapes

  • Structure Of Printed Boards (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

This invention relates to printed circuit board (PCB) with high heat conductivity. Mainly, a heat-conduction insulating layer is disposed upon a substrate, the heat-conduction insulating layer contacts with the circuit. Through the electric circuit, the heat-conduction insulating layer rapidly conducts the heat generated by the semiconductor chip on the circuit. It maintains the semiconductor chip at the normal working temperature. The heat-conduction insulating layer replaces the epoxy insulation layer on the current PCB and the polyimide passivation layer covering the circuit, so that the high thermal-energy generated by the high-power semiconductor chip can be transmitted quickly to the substrate by the heat-conduction insulating layer for dissipating heat after passing through the solder and circuit. Or, the heat can be dissipated through the heat-exchange between the heat-conduction insulating layer and the air.

Description

1255161 九、發明說明: 【發明所屬之技術領域】 本發明係屬於-種印刷電路板’尤指—種具高導熱性 印刷電路板,其具有一導熱層可提供安裝於印刷電路板上 的半導體晶片良好的導熱效i ’以避免半導體晶 失效或損毀。 【先前技術】 請參照第五圖,現有的印刷電路板係主要在一金屬基 板(9 〇 )上形成一絕緣層(9丄),該絕緣^ 9 1 ) 係以環氧化物如環氧樹脂等構成,該絕緣^ ( g丄)上妒 成有-銅製的電路(92) ’部分電路(92)上分別形 成覆蓋電路(9 2 )的保護層(9 3 ),該保護層(9 3 )1255161 IX. Description of the Invention: [Technical Field] The present invention relates to a printed circuit board, and more particularly to a highly thermally conductive printed circuit board having a thermally conductive layer for providing a semiconductor mounted on a printed circuit board The wafer has good thermal conductivity i' to avoid semiconductor crystal failure or damage. [Prior Art] Referring to the fifth figure, the conventional printed circuit board is mainly formed with an insulating layer (9 Å) on a metal substrate (9 )), which is made of an epoxy such as an epoxy resin. And the like, the insulating layer (g丄) is formed into a copper-made circuit (92). The partial circuit (92) respectively forms a protective layer (9 3 ) covering the circuit (92), and the protective layer (9 3 )

係以聚亞酸胺(P〇 1 y i m i de )谱# L hmiaej構成,另外一部分的電路(9 2 )上覆設有一銲錫(q 4、 々一、 、y 4 )供連接一半導體晶片,使 得半導體晶片與部分電路(9 2 )電連接。 請參照第六圖,當—發朵一托雕〆 • 知九一極體(LED, Light EmittingIt is composed of polypyridylamine (P〇1 yimi de ) spectrum # L hmiaej, and another part of the circuit (92) is covered with a solder (q 4, 々1, y 4 ) for connecting a semiconductor wafer, so that The semiconductor wafer is electrically connected to a portion of the circuit (92). Please refer to the sixth picture. When the hair is made, the hair is smashed.

Di ode )安裝在前述印刷雷改 斗# 、 、 邓j甩路板上,该發光二極極體係透 過銲錫(9 4 )銲接在特定的帝欠rDi ode ) is installed on the above-mentioned printed Lei Xun bucket #, 、,jj, and the illuminating diode system is soldered to the specific imperial y

吁疋的私路(9 2 )之上;由於LED 主要功能在於發光,LED所史狀AA ,印> 所女衣的位置處通常無足夠空間 可額外加裝風扇來強制敛剩_ a …、對/;丨L,即使加裝風扇,風扇亦會 大量增加元件整體耗電晋, 兒里而失去LED高效率、省電節能、 尺寸輕小及環保等優點,从—二+ 士 、 ·、,、£ 故在刖述因素下,LED僅能利用 熱傳導與自然對流來散執· 月又…、,然而,%氧化物絕緣層(9 1 ) 及聚亞酿胺保護層(q q. y 3)的熱傳導率非常低,其中聚亞 1255161 醯胺保護層(Q 〇 λ ^ 因此僅能提On the private road (9 2 ) of the call; because the main function of the LED is to illuminate, the history of the LED is AA, India > , / / 丨 L, even with the addition of a fan, the fan will increase the overall power consumption of the component, and lose the high efficiency of LED, energy saving, small size and environmental protection, from - two +, · Therefore, under the above-mentioned factors, LEDs can only use heat conduction and natural convection to dissipate. · Month..., however, % oxide insulating layer (9 1 ) and poly-branched amine protective layer (q q. y 3) has a very low thermal conductivity, of which poly-1251561 guanamine protective layer (Q 〇λ ^ can therefore only mention

3 )的熱傳導率小於1 f/mK 供LED有限度的散熱。 、如第六圖所示的箭頭方向係為熱傳導方向,當LED係 為可發出強光的高功率led日夺,環氧化物絕緣層(9丄) 對LED的熱傳導作用不足,導致在銲錫(9 4 )與環氧化 物絕緣層(9 1 )之間的銅電路(9 2 )内產生一熱點(Heat Ρ〇1ηΐ)而阻礙了 LED的散熱,故LED運作時持續增溫且 無法維持在一正常的運作溫度,更可能因高溫而損毀;此 外’聚亞醯胺保護層(9 3 )亦阻礙銅電路(9 2 )的散 …因此降低印刷電路板整體的熱傳導率,故同樣阻礙了 LED的散熱,導致lED壽命降低。 【發明内容】 故本發明人有鑑於現有印刷 限制了高功率LED發展的缺點, Is明出一種高導熱性印刷電路板 電路板的熱傳導率 改良其不足與缺失 不足而 ,進而 本發明之主要目的係提供一種高導 係t i ^ 熱性印刷電路板, 係主要在於一印刷電路板上設置一 道一 ,+ , …、、、巴、,家層,以迅速傳 阿工率半導體晶片如發光二極體等 功率半導體晶片在該印刷電路板上 …、° 4仍可維持一正常 為達上述目的,本發明提供一 叔计+ $熱性印刷電路 板,/、主要在於一基板上設置一與基板上一帝 導熱絕緣層,該導熱絕緣層係透過目接觸的 心心电路迅速傳導_^ 电路上的半導體晶片之高熱,以維持該半導坤曰」 肢日日片的正常 1255161 工作溫度。 藉由上述技術手段,導熱絕緣層係可取代現有印刷電 ::基板上的環氧化物絕緣層及覆蓋在電路上的聚亞隨胺 =層’使得高功率半導體晶片所產生的高熱能經過銲錫 及電路後,能快速的被導熱絕緣層傳遞到基板而散轨,或 精由導熱絕緣層與空氣的熱交換而散熱。 【貫施方式】 本發明高導熱性印刷電路板,係主要在於一基板上設 置—與電路相接觸的導熱絕緣層,該導熱絕緣層係透過電 路迅速傳導-設置於電路上的半導體晶片之高#,以維持 5玄半導體晶片的正常工作溫度。 月…、、、第及第一圖’其中為本發明高導熱性印刷電 :板的第一實施例’其中基&(10)係以紹、銅或陶究 寺材料製造,在—基板(1Q)I面上鋪設-絕緣層(i 1 )緣層(1 1 )可為—種環氧樹脂(Ep。” Resin); 在絶緣層(i ±設置一銅製電路(丄2 ),在部分電 路(1 2 )上設置-銲錫(1 4 ),所有電路(丄2 )的 外露表面係覆蓋一導熱絕緣層(1 7 ),該導熱絕緣層(丄 7 )係以鑽石或類鑽碳(DLC,仏瞻d 構 成,鑽石或類鑽碳的熱傳導率係為4〇〇到6〇〇W/mK之間, 遠大於傳統環氧樹脂的熱傳導率(小於lw/mK),且鑽石 或類鑽碳具有良好的絕緣性,故當一高功率發光二極體 (LED,Light Emitting Diode) ( 2 〇 )設置於銲錫(工 4 )上時,如第二圖中代表熱傳導方向的箭頭所示,發光 1255161 二極體(2 0)所發出的高熱透過銲錫(1 4)及電路(1 2 )傳遞到導熱絕緣層(1 7 ),導熱絕緣層(1 7 )快 速地與外部空氣進行熱交換以進行對發光二極體(2 〇 ) 的散熱。 請參照第三及第四圖,其中為本發明高導熱性印刷電 路板的第二實施例,係主要在一基板(1 〇 )表面上鋪設 一導熱絕緣層(1 7 ),該導熱絕緣層(1 7 )之材料係 為第一實施例中所述的鑽石或類鑽碳,在導熱絕緣層(工 7)上设置一銅製電路(12),在部分電路(12)上 設置一銲錫(1 4 ),在電路(丄2 )的外露表面覆蓋一 保護層(1 3 ),該保護層(1 3 )係以聚亞醯胺 (Polyhide)製造;當一高功率發光二極體(2 〇 )透 過έ干錫(1 4)與電路(1 2)連接時,如第四圖中代表 熱傳導方向的箭頭所示,發光二極體(2 0 )#光時所散 ,的高熱經過銲锡(1 4)及電4 ( i 4)而到達導熱絕 、彖層(1 7 )’導熱絕緣層(1 7 )則快速將高熱向四周 傳遞’以使發光二極體(2 〇 “隹持在一適當溫度而不至 於失效或燒毁。 ltb夕卜’亦可柄缺 很媒弟一及第二實施例來組合出以導熱絕 緣層(17)同時敌>楚 ^ 卜 $取代弟一貫施例中的絕緣層(1 1 )及 第二實施例中的伴 、 示%層(1 3 )而得到第三實施例。 鑽石或類傷⑴ 、'吳所構成導熱絕緣層之形成方法將詳述於 下;當基板以矽式 n 攻陶兗來製造時,鑽石導熱絕緣層係以熱 燈絲法化學氣相Μ /儿積(Hot Filament CVD)方法或微波電 1255161 毁輔助化學氣相沉積(Microwave Plasma Enhanced Chemical Vapor Deposition )方法而形成,且其製程溫 度在係大於5 0 0 °C,鑽石所形成的導熱絕緣層厚度為5 —3 0微米,當基板以碎、陶究或铭、銅等金屬來製造時, 類鑽碳導熱絕緣層係以陰極環電弧物理氣相沉積 (Cathodic Arc PVD)方法、濺射物理氣相沉積(Sputtering PVD )方法或電漿輔助化學氣相沉積(Plasma Assisted CVD)方法來形成。 藉由上述技術手段,導熱絕緣層(j 7 )係可取代現 有印刷電路板基板上的環氧化物絕緣層()及覆蓋在 電路(1 2 )上的聚亞醯胺保護層(丄3 ),使得發光二 極體(2 0 )#高功率半導體晶片所產生的高熱能經過鲜 錫(1 4 )及電路(丄2 )後,能快速的被導熱絕緣層(^ 7 )傳遞到基板而散熱,或藉由導熱絕緣層(丄7 )與* 氣的熱交換而散熱,進而提高印刷電路板的應用性。”二 【圖式簡單說明】 f一圖係為本發明第一實施例之正面剖視圖。 第圖係為本發明第—實施例之操作視意圖。 弟二圖係為本發明第二實施例之正面剖視圖。 第四圖係為本私日月μ _ ^ &月弟一貝鈀例之操作視意圖。 弟五圖係為現有印刷電路板之正面剖視圖。 第六圖係為現有印刷電路板之操作視意圖。 【主要元件符號說明】 1255161 (1 ο)基板 (1 2 )電路 (1 4 )銲錫 (2 0)發光二極體 (9 1 )絕緣層 (9 3 )保護層 (9 8)發光二極體 (1 1 )絕緣層 (1 3 )保護層 (1 7 )導熱絕緣層 (9 0 )金屬基板 (9 2 )電路 (9 4 )銲錫 (A )熱點3) The thermal conductivity is less than 1 f/mK for limited heat dissipation of the LED. The direction of the arrow as shown in the sixth figure is the direction of heat conduction. When the LED is a high-power LED that emits strong light, the epoxide insulating layer (9丄) has insufficient heat conduction effect on the LED, resulting in soldering ( 9 4) A hot spot (Heat Ρ〇1ηΐ) is generated in the copper circuit (9 2 ) between the epoxide insulating layer (9 1 ), which hinders the heat dissipation of the LED, so the LED continues to increase in temperature during operation and cannot be maintained. A normal operating temperature is more likely to be destroyed by high temperature; in addition, the 'polyimide protective layer (9 3 ) also hinders the dispersion of the copper circuit (9 2 ), thus reducing the thermal conductivity of the printed circuit board as a whole, thus also hindering The heat dissipation of the LED causes the lifetime of the lED to decrease. SUMMARY OF THE INVENTION Therefore, the present inventors have in view of the shortcomings of the prior art that the development of high-power LEDs has been limited, and it is apparent that the heat conductivity of a high thermal conductivity printed circuit board circuit board is insufficiently improved and insufficient, and the main object of the present invention is further The invention provides a high-conductivity ti ^ thermal printed circuit board, which is mainly provided with a layer of one, +, ..., ,, bar, and a home layer on a printed circuit board to rapidly transmit a semiconductor wafer such as a light-emitting diode. The power semiconductor chip on the printed circuit board ..., ° 4 can still maintain a normal for the above purpose, the present invention provides a tertiary meter + $ thermal printed circuit board, /, mainly on a substrate and a substrate The thermal conductive insulating layer rapidly conducts the high heat of the semiconductor wafer on the circuit through the core circuit of the eye contact to maintain the normal 1255161 operating temperature of the semiconductor device. By the above technical means, the thermal conductive insulating layer can replace the existing printed electric power: the epoxy insulating layer on the substrate and the poly-subsynthesis layer on the circuit, so that the high thermal energy generated by the high-power semiconductor wafer passes through the solder. After the circuit, it can be quickly transferred to the substrate by the thermal conductive layer to loosen the track, or the heat can be dissipated by the heat exchange between the thermal conductive layer and the air. [Common application method] The high thermal conductivity printed circuit board of the present invention is mainly provided on a substrate which is a thermally conductive insulating layer which is in contact with the circuit, and the thermally conductive insulating layer is rapidly transmitted through the circuit - the height of the semiconductor wafer disposed on the circuit #, to maintain the normal operating temperature of the 5 Xuan semiconductor wafer. Month...,, and the first figure 'where is the first embodiment of the high thermal conductivity printed circuit of the present invention: the base & (10) is made of Shao, copper or ceramics material, on the substrate (1Q) laying on the I surface - insulating layer (i 1 ) edge layer (1 1 ) may be an epoxy resin (Ep. "Resin); in the insulating layer (i ± set a copper circuit (丄 2), in A part of the circuit (12) is provided with a solder (14), and the exposed surface of all the circuits (丄2) is covered with a thermally conductive insulating layer (17) which is made of diamond or diamond-like carbon. (DLC, 仏 d d constitutes, the thermal conductivity of diamond or diamond-like carbon is between 4 〇〇 and 6 〇〇 W / mK, far greater than the thermal conductivity of traditional epoxy resin (less than lw / mK), and diamond or Drill-like carbon has good insulation, so when a high-power LED (Light Emitting Diode) (2 〇) is placed on the solder (Work 4), as shown in the second figure, the arrow indicating the direction of heat conduction The high heat emitted by the light 1251161 diode (20) is transmitted to the thermally conductive insulating layer (1 7 ) through the solder (1 4) and the circuit (1 2 ), and the thermal conductive layer (1) 7) Quickly exchange heat with the outside air to dissipate heat from the light-emitting diode (2 〇). Referring to the third and fourth figures, which is a second embodiment of the high thermal conductivity printed circuit board of the present invention, Mainly laying a thermal conductive insulating layer (1 7 ) on the surface of a substrate (1 )), the material of the thermal conductive insulating layer (17) is the diamond or diamond-like carbon described in the first embodiment, in the thermal conductive insulating layer (Working 7) is provided with a copper circuit (12), a solder (1 4 ) is disposed on a part of the circuit (12), and a protective layer (13) is covered on the exposed surface of the circuit (丄2), the protective layer ( 1 3) is made of Polyhide; when a high-power light-emitting diode (2 〇) is connected to the circuit (12) through the dry tin (14), as shown in the fourth figure, it represents heat conduction. As indicated by the arrow in the direction, the high heat of the light-emitting diode (2 0 )# is transmitted through the solder (1 4) and the electricity 4 (i 4) to reach the heat-conducting, bismuth layer (1 7 )' thermal conductive insulation. Layer (17) quickly transfers high heat to the periphery so that the light-emitting diode (2 〇 "holds at a suitable temperature without failing or burning down Ltb 夕卜' can also be used as a medium and a second embodiment to combine the thermal insulation layer (17) at the same time as the enemy > Chu ^ 卜 $ replace the insulation layer (1 1) in the brother's consistent application The third embodiment is obtained by the accompanying and showing % layer (1 3 ) in the second embodiment. The method of forming the thermal conductive insulating layer formed by diamond or the like (1) and 'Wu' will be described in detail below; When the ceramics are manufactured, the diamond thermal insulation layer is formed by the method of hot filament chemistry/Hot Filament CVD or Microwave Plasma Enhanced Chemical Vapor Deposition. And the process temperature is greater than 500 ° C, the thickness of the thermal conductive layer formed by the diamond is 5 - 30 microns, when the substrate is made of metal, such as broken, ceramic or Ming, copper, etc. The insulating layer is formed by a Cathodic Arc PVD method, a sputtering physical vapor deposition (Sputtering PVD) method, or a plasma assisted chemical vapor deposition (CVD) method. By the above technical means, the thermally conductive insulating layer (j 7 ) can replace the epoxy insulating layer on the existing printed circuit board substrate and the polyamine protective layer (丄3) covering the circuit (12). Therefore, the high thermal energy generated by the light-emitting diode (20)# high-power semiconductor wafer can be quickly transferred to the substrate by the thermal conductive layer (^7) after passing through the fresh tin (1 4 ) and the circuit (丄2). Heat dissipation, or heat dissipation by heat exchange between the thermally conductive insulating layer (丄7) and the * gas, thereby improving the usability of the printed circuit board. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front cross-sectional view showing a first embodiment of the present invention. The first drawing is an operation of the first embodiment of the present invention. The second drawing is a second embodiment of the present invention. The front view is the front view of the private printed circuit board. The fifth picture shows the front view of the existing printed circuit board. The sixth picture shows the existing printed circuit board. Operation is not intended. [Main component symbol description] 1255161 (1 ο) substrate (1 2 ) circuit (1 4 ) solder (20) light-emitting diode (9 1) insulating layer (9 3 ) protective layer (9 8 ) Light-emitting diode (1 1 ) Insulating layer (1 3 ) Protective layer (1 7 ) Thermally conductive insulating layer (90) Metal substrate (9 2 ) Circuit (9 4 ) Solder (A) hot spot

99

Claims (1)

!255161 十、申請專利範圍: £回ν熱性印刷電路板,係可在其上設置發, 二極體等高功率主道遍 盥 力羊+導體晶片,其主要在於一基板上設置一 土板上t路相接觸的導熱絕緣層,該導熱絕緣層係这 义電路迅速傳導-設置於電路上的半導體晶片之高轨,, 維持該半導體晶片的正常工作溫度。!255161 X. Patent application scope: £ ν thermal printed circuit board, which can be equipped with high-power main roads such as diodes and conductors, which are mainly placed on a substrate. The thermally conductive insulating layer in contact with the t-path, the thermally conductive insulating layer is rapidly conductive - the high rail of the semiconductor wafer disposed on the circuit to maintain the normal operating temperature of the semiconductor wafer. 2 ·如申請專利範圍第1項所述之高導熱性印刷電路 板其中在基板的表面上鋪設一絕緣層,該絕緣層之上供 ,置該電%,在部分電路上設置一用以連結半導體晶片的 銲錫’該導熱絕緣層覆蓋在所有t路的外露表面上。 3 ·如中請專利範圍第2項所述之高導熱性印刷電路 板,其中該絕緣層係為環氧樹脂(Ep〇xy Resin)。 4 ·如中請專利範圍第丄項所述之高導熱性印刷電路 板,其中该導熱絕緣層鋪設在基板上,該導熱絕緣層上供 設置該電路,在部分電路上設置_鋅錫,在所有電:的^ 露表面覆蓋一保護層。 卜2. The high thermal conductivity printed circuit board according to claim 1, wherein an insulating layer is disposed on the surface of the substrate, the insulating layer is provided thereon, and the electricity is disposed, and a portion of the circuit is provided for connecting The solder of the semiconductor wafer 'the thermally conductive insulating layer covers the exposed surface of all the traces. 3. The high thermal conductivity printed circuit board of claim 2, wherein the insulating layer is an epoxy resin (Ep〇xy Resin). 4. The high thermal conductivity printed circuit board according to the above aspect of the invention, wherein the thermally conductive insulating layer is disposed on the substrate, the thermal conductive insulating layer is provided with the circuit, and a part of the circuit is provided with zinc tin. All electricity: The exposed surface is covered with a protective layer. Bu 5 ·如申請專利範圍第4項所述之高導熱性印刷電路 板,其中該保護層係以聚亞醯胺(p〇lyimide)製造。兔 6 ·如申請專利範圍第工項所述之高導熱性印刷電 板,其中該導熱絕緣層係鋪設在基板上,該導熱絕緣層路 供設置該電路’在部分電路上設置一銲錫,在所有電^ 2 外露表面覆蓋另一相同於基板上導熱絕緣層的導熱浐的 …、、”巴緣 7 .如申請專利範圍第1到6項中任一項所 乂〈鬲導 10 1255161 熱性印刷電路板,其中該導熱絕緣層係以鑽石構成。 8 ·如申請專利範圍第1到6項中任一項所述之高導 熱性印刷電路板,其中該導熱絕緣層係以類鑽碳(dlc, Diamond Like Carbon)構成。 9 ·如申請專利範圍第7項所述之高導熱性印刷電路 板,其中鑽石導熱絕緣層係以熱燈絲法化學氣相沉積( Filament CVD)方法而形成。 1 〇 .如申請專利範圍第7項所述之高導熱性印刷電 路板,其中鑽石導熱絕緣層係以微波電漿辅助化學氣相沉 積(Microwave Plasma Enhanced Chemical Vapl Deposition)方法而形成。 11·如申請專利範圍第8項所述之高導熱性印刷電 路板’其中類鑽碳導熱絕緣層係以陰極環電弧物理氣相沉 積(Cathodic Arc PVD)方法而形成。 項所述之高導熱性印刷電 係以減射物理氣相沉積5. The high thermal conductivity printed circuit board of claim 4, wherein the protective layer is made of polyplylimide. The high thermal conductivity printed circuit board according to the application of the patent application, wherein the thermal conductive insulating layer is laid on the substrate, the thermally conductive insulating layer is provided with the circuit 'providing a solder on part of the circuit, All of the exposed surfaces of the second surface of the substrate are covered by another thermal conductive layer of the thermally conductive insulating layer on the substrate, and the "baffle edge" is as described in any one of claims 1 to 6 of the patent application. A high thermal conductivity printed circuit board according to any one of claims 1 to 6, wherein the thermally conductive insulating layer is diamond-like carbon (dlc). The high thermal conductivity printed circuit board according to claim 7, wherein the diamond thermal conductive insulating layer is formed by a thermal filament chemical vapor deposition (CVD) method. The high thermal conductivity printed circuit board according to claim 7, wherein the diamond thermal conductive insulation layer is microwave plasma enhanced chemical Vapor Dep. The osition method is formed. 11. The high thermal conductivity printed circuit board as described in claim 8 wherein the diamond-like thermal conductive insulating layer is formed by a Cathodic Arc PVD method. High thermal conductivity printed electrical system with reduced physical vapor deposition 1 2 ·如申請專利範圍第8 路板,其中類鑽碳導熱絕緣層 (Sputtering PVD)方法而形成 項所述之高導熱性印刷電 助化學氣相沉積(Plasma 1 3 .如申請專利範圍第8 路板’其中類鑽碳係以電聚辅 Assisted CVD)方法而形成。 1 4 ·如申請專利範圍第 路板’其中基板係利用矽及陶 程溫度係大於5 0 〇 °C,鑽石 5 — 3 0微米。 9項所述之高導熱性印刷電 瓷其中一種材料來製造,製 所形成的導熱絕緣層厚度為 11 12551611 2 · As in the patent application scope 8th board, in which the carbon-coated thermal conductive insulating layer (Sputtering PVD) method is formed to form the high thermal conductivity printing electro-assisted chemical vapor deposition (Plasma 1 3 . The 8-way board 'formed in the carbon-based Assisted CVD method is formed. 1 4 · If the scope of the application for the patent plate is 'the substrate is used, the temperature is greater than 50 ° C, and the diamond is 5 - 30 μm. The material of one of the high thermal conductivity printed ceramics described in the nine items is manufactured, and the thickness of the thermally conductive insulating layer formed is 11 1255161. 電路板, 製程溫度係大於5 〇 〇 °c 為5 — 3 〇微米。 •如申請專利範圍第工 其中基板係利用矽及陶 鑽石 0項所述之高導熱性印刷 瓷其中一種材料來製造, 所形成的導熱絕緣層厚度 1項所述之高導熱性印刷 兗及金屬其中一種材料來 ’鑽石所形成的導熱絕緣 •如申請專利範圍第1 電路板,其中基板係利用矽、陶 製造,製程溫度係小於2 〇 〇 ^ 層厚度為1 一 5微米。 1 7 ·如申請專利笳囹For the board, the process temperature is greater than 5 〇 〇 °c is 5 — 3 μm. • If the application of the patent scope is made of one of the materials of high thermal conductivity printing ceramics described in 矽 and ceramic diamonds, the thermal conductive insulating layer has a thickness of one of the high thermal conductivity printing enamel and metal. One of the materials comes with 'thermal conductive insulation formed by diamonds. ・ For example, the first circuit board of the patent application range, in which the substrate is made of tantalum and ceramics, the process temperature is less than 2 〇〇^ and the thickness of the layer is 1 to 5 μm. 1 7 ·If you apply for a patent笳囹 雷路柘^ ^ ^ 圍弟1 2項所述之高導熱性印 笔路板,其中基板係利 1 fy 1 ^ 用矽、陶瓷及金屬其中一種材料 版造,製程溫度係小於2 禋材科 層厚度為1-5微米。〇C ’鑽石所形成的導熱絕 1 8 ·如申請專利筋 電路板,其中基板係利用所述之高導熱性印 -造,製程溫度係小於2 “中—種材料 層厚度為1 - 5微米。 ’’石所形成的導熱絕雷路柘 ^ ^ ^ The high thermal conductivity printing road plate described in the 2nd edition of the brothers, wherein the substrate is 1 fy 1 ^ made of one of the materials of ceramics, ceramics and metal, the process temperature system is less than 2 The layer thickness is 1-5 microns.导热C 'diamonds formed by the thermal conductivity of the first 18 · If the patented rib circuit board, in which the substrate is made using the high thermal conductivity printing, the process temperature is less than 2" medium-thickness material layer thickness is 1 - 5 microns ''The heat formed by the stone 十一、圖式: 如次頁 12XI. Schema: as the next page 12
TW93139329A 2004-12-17 2004-12-17 PCB with high heat conductivity TWI255161B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93139329A TWI255161B (en) 2004-12-17 2004-12-17 PCB with high heat conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93139329A TWI255161B (en) 2004-12-17 2004-12-17 PCB with high heat conductivity

Publications (2)

Publication Number Publication Date
TWI255161B true TWI255161B (en) 2006-05-11
TW200626052A TW200626052A (en) 2006-07-16

Family

ID=37607618

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93139329A TWI255161B (en) 2004-12-17 2004-12-17 PCB with high heat conductivity

Country Status (1)

Country Link
TW (1) TWI255161B (en)

Also Published As

Publication number Publication date
TW200626052A (en) 2006-07-16

Similar Documents

Publication Publication Date Title
US7766514B2 (en) Light emitting diode lamp with high heat-dissipation capacity
CN101315176A (en) Light source module group with better cooling efficiency
TWM328763U (en) Structure of heat dissipation substrate
TW201103381A (en) High heat dissipation circuit board and fabrication method thereof
CN105333407A (en) Heat dissipation structure and manufacturing method
TW200934990A (en) Illumination device
CN101740678A (en) Solid state light-emitting element and light source module
KR101064793B1 (en) Radiant heat led board
TWI255161B (en) PCB with high heat conductivity
JP4870426B2 (en) Circuit board with high heat transfer efficiency
KR101619806B1 (en) Method for manufacturing heatsink and the heatsink thereby
TWI769090B (en) Light source module
CN101514809B (en) Illuminating apparatus
TW201010022A (en) Light emitting diode heatsink
TWI378580B (en) Socket led device
TW200847481A (en) LED base body with separated heat and electric conductions, and the heat-dissipation unit structure thereof
TWM243001U (en) Heat dissipation
TWI277385B (en) Heat dissipating substrate
JP2007180439A (en) Electric circuit-plate having high heat conducting efficiency
TWM344027U (en) Heat conductive mechanism for light emitting diode
TWM522471U (en) LED with heat dissipation mechanism
TWM437430U (en) Illumination equipment
CN102751270A (en) Metal substrate structure with light-emitting diode (LED)
TWI387702B (en) Illumination device
TW202303037A (en) Light source module

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees