TWI251663B - Determination of center of focus by cross-section analysis - Google Patents
Determination of center of focus by cross-section analysis Download PDFInfo
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!251663 五、發明說明(1) 【發明所屬 本發明 技術應用中 印刷技術應 的決定。 【先前技術 注意下 最近之出版 較早技術。 但這類出版 明技術。 在半導 有許多方面 上的有 曰曰 其中一項應 自蒙片或光 層接著被顯 殘留〈負防 影像圖型。 類型也被應 術中,應用 源、準分子 個作業員工 法,並且運 之技術領域】 所敘述與藉由斷面散射模型分析以在平版印刷 決定印刷參數的方法相關聯,其中包括在平版 用,如光阻刻蝕劑印刷晶片製作中,焦距中心 述討論提及一些作者出版品及出版年份,基於 曰期’某些出版品並不能視為相對於本發明之 在此就這類出版品之討論給予更完整的背景, 品並不能構成在專利權決定之目的上之較早發 體、光學、及其他相關產業中,平版印刷技術 的應用。平版印刷技術應用在半導體設備生產 片上之積體電路、平板顯示器及磁頭等等。在 用上’平版印刷技術藉由間距調變光將一圖型 學網線傳运至基底上之防染劑層,而此防染劑 像,而其曝光之圖形可經由去蝕〈正防染〉或 染、〉的方式在防染劑層上產生一個三度空間之 然而除了此光阻刻蝕劑印刷技術外其他印刷 用。在種、特別使用在半導體產業的印刷技 步進器’最典型的包含透鏡與發光 1射先源、晶片臺、線網臺、^ ^ n I :二代/進器設傷採用正防染及負防染 用原始的步和重複模式或者步和掃描模式,或!251663 V. DESCRIPTION OF THE INVENTION (1) [Description of the invention The application of the printing technique in the technical application of the present invention. [Prior technology note recently published earlier technology. But this type of publishing technology. There are many aspects in the semi-conductor. One of them should be left from the mask or the light layer and then left to appear as a negative image. Types are also used in the application, source and excimer workforce methods, and are described in the technical field. The method is related to the method of determining the printing parameters in lithography by cross-sectional scattering model analysis, including in lithography. In the fabrication of photoresist etched wafers, the focus center discussion mentions some author publications and publication years, based on the 'period of publications' and may not be considered as such publications relative to the present invention. The discussion gives a more complete background, and the product does not constitute the application of lithographic techniques in earlier hair, optical, and other related industries for the purpose of patent determination. The lithographic technique is applied to integrated circuits, flat panel displays, magnetic heads, and the like on the production of semiconductor devices. In the lithography technique, a pattern network cable is transported to the anti-dye layer on the substrate by the pitch modulation light, and the image of the anti-dye agent is exposed, and the image of the exposure can be removed by etching. The method of dyeing or dyeing, > produces a three-dimensional space on the layer of the anti-dyeing agent, but is printed in addition to the photoresist etchant printing technique. In the kind of printing technology stepper used in the semiconductor industry, the most typical ones include lenses and light-emitting sources, wafer stages, wire nets, ^^n I: second-generation/injector And negative staining with the original step and repeat mode or step and scan mode, or
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者兩者均有。 嗶光及焦距決 阻刻蝕劑印刷術中之防染2屉圖型形成的品質,在使用光 在每一單位區域中的平二‘1上亦是=此。曝光決定影像 所控制。焦距則是決定"二里’並且是由光照時間和強度 之減少,並且由相對於影像?、/糸相^較於正確對焦在調變上 置所控制。 …先$焦平面之防染層表面位 曝光及焦距會因 進焦距偏移而產生個 印刷技術所產生之影 在可接受之範圍内。 米線之平版印刷技術 在決定步進焦距 裝置之應用,例如掃 器。然而即便此SEM 作過程是非常昂貴的 亦是十分緩慢且難以 方染層厚度、基底分佈形貌,以及步 別差異。正因此差異之存在,平版 像圖型便須加以監控以確保影像品質 曝光與焦距之監控在用以產生次微 上顯得格外重要。 和其他類似印刷技術上有各種方法和 #田策子顯微鏡〈SEM〉及其他類似儀 度量技術精準度可達〇· 1微米,其操 並且需要一個高度真空室,相對而言 自動化的。光學顯微鏡也同樣可被 應用,然而它卻不具備相當程度之次微米解析能力。另 外其他方法包括特定目標和測試罩之發展,顯示於美國專 利弟 5,712,707 ’5,953,128 及6,088,113 號。顯示於美國 專利第5, 952, 132號之重疊錯誤法也是另一項已為人知的 方法。然而這些方法在因目標物本性所需之解析度提古 時,仍需搭配使用SEM、光學顯微鏡或相關直接夠量儀 器。Both have. The quality of the anti-staining 2-drawer pattern in the lithography and focal length etchant printing is also used in the flat two ‘1 in each unit area. Exposure determines the control of the image. The focal length is determined by "two miles' and is reduced by the illumination time and intensity, and is controlled by the modulation relative to the image?, /糸 phase, and the correct focus. ...the surface of the anti-staining layer of the $ focal plane. The exposure and focal length will be affected by the offset of the focal length and the impact of a printing technique is within acceptable limits. The lithographic technique of the rice noodle is used in applications that determine the step focal length device, such as a sweeper. However, even if the SEM process is very expensive, it is very slow and difficult to dye the thickness of the layer, the distribution of the substrate, and the difference in steps. Because of the difference, lithographic image patterns must be monitored to ensure image quality. Exposure and focus monitoring are particularly important in generating sub-micro. There are various methods and other similar printing techniques and #田策子microscopes <SEM> and other similar instruments. The measurement technology has a precision of up to 1 micron, and it requires a high vacuum chamber and is relatively automated. Optical microscopy can also be applied, but it does not have the equivalent of micron resolution. Other methods include the development of specific targets and test covers, which are shown in US patents 5,712,707 '5,953,128 and 6,088,113. The overlap error method shown in U.S. Patent No. 5,952,132 is another known method. However, these methods still need to be used with SEM, optical microscope or related direct enough instrument when the resolution required for the nature of the target is advanced.
第5頁 1251663 五、發明說明(3) 有許多不同之散射計及相關技術和測量儀器都被使用 於描繪微電子及光電子半導體原料之微分子結構、電腦硬 碟、光碟、刨光光學組件及其他原料側向尺寸幅度跨及〇 . 1微米至數十微米。舉例而言,由A c c e n t 0 p t i c a 1 Technologies, Inc· 所製造販賣之CDS200散射計便是一 全自動化,零破壞性之臨界尺寸測量及斷面輪廟分析系 統’部份顯示於美國專利第5,7 0 3,6 9 2號。此儀器可連續 地解析精細度高達1 n m或更小之臨界尺寸,同時可決定斷 面輪廓分析及執行單層厚度估量。此儀器監控隨發光束之 入射角改變之單一繞射級之強度。由樣品產生之零次方 或反射級’以及更南繞射級之強度變化可經由此方式監 控,因而提供有關樣品性質之所需資料。樣品的製作流 程決定此物件之性質,因此所得資料亦可間接監控其製作 流私。此方法論在半導體製造文化中為一重要章節。許 多關於散射分析之方法及技術被廣泛教授,包括那些顯示 於美國專利第4, 710, 642, 5, 164790, 5, 241369, 5,70 3,692,5,867,276,5,889,593,5,912,741及6,100, 9 8 5 號。 另外一項決定最佳焦距之技術為根據移相技術而特別 設計的光學網線(R· Edwards, P· Ackmann, C.Page 5 1251663 V. Description of the invention (3) There are many different scatterometers and related technologies and measuring instruments used in the micro-molecular structure depicting microelectronics and optoelectronic semiconductor materials, computer hard drives, optical discs, planed optical components and The lateral dimension of the other materials ranges from 1 micron to tens of microns. For example, the CDS200 scatterometer sold by Accent 0 ptica 1 Technologies, Inc. is a fully automated, zero-destructive critical dimension measurement and section wheel temple analysis system. , 7 0 3, 6 9 2nd. The instrument continuously analyzes critical dimensions with a fineness of up to 1 nm or less, while determining the profile analysis and performing a single layer thickness estimate. The instrument monitors the intensity of a single diffraction stage that varies with the angle of incidence of the illuminating beam. Variations in the intensity of the zero or squared reflections produced by the sample and the more south diffraction orders can be monitored in this manner, thus providing the information needed for the properties of the sample. The production process of the sample determines the nature of the object, so the resulting data can also be indirectly monitored for its smuggling. This methodology is an important chapter in the semiconductor manufacturing culture. Many methods and techniques for scatter analysis are widely taught, including those shown in U.S. Patent Nos. 4,710, 642, 5, 164,790, 5, 241,369, 5,70, 3,692, 5,867,276, 5,889,593, 5,912,741 and 6,100, 9 8 Number 5. Another technique for determining the best focal length is an optical cable specially designed for phase-shifting technology (R· Edwards, P· Ackmann, C.
Fischer, "Characterization of Autofocus Uniformity and Precision on ASML Steppers using the Phase Shift Focus Monitor Reticle, M Proc, SP IE Vo 1. 3051,pp· 448-455, 1997)。 當一個物件在最佳焦距外Fischer, "Characterization of Autofocus Uniformity and Precision on ASML Steppers using the Phase Shift Focus Monitor Reticle, M Proc, SP IE Vo 1. 3051, pp. 448-455, 1997). When an object is outside the best focal length
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V 1251663 五、發明說明(4) 被拍攝,自光學網線上印刷出來之影像便會變得不對偁且 具有更多之侧向影像位移。而這些影像可利用如複疊測 量技術中所使用的影像基準度量工具來作分析。 另一決定最佳焦距之技術為線條縮短法,或稱 'schni tzlometry11 <C. P, Ausschnitt, Μ. E. Lagus, Seeing the forest for the trees: a new approach t〇 CD control,” Pr〇c. SPIE V〇l· 3332, pp· 212-220, 1 9 9 8〉。此方法使用相比下較大之臨界尺寸(約3微米)之 線條/空間陣列,兩個陣列彼此相鄰。當此結構經由對焦 及/或有效劑量印刷出來時,其線條縮短,以致之間的空 間變寬。而此空間可以如複疊測量技術中所使用的影像 基準度量工具來作測量。 另外還有一項決定最佳焦距之技術為r繞射特性差異 法」,或稱DSD ’顯示於美國專利第6, 42 9, 9 3 〇號,發明者V 1251663 V. INSTRUCTIONS (4) When photographed, the image printed from the optical network will become misaligned and have more lateral image displacement. These images can be analyzed using image reference metrics such as those used in cascade measurement techniques. Another technique for determining the optimum focal length is the line shortening method, or 'schni tzlometry11 <C. P, Ausschnitt, Μ. E. Lagus, Seeing the forest for the trees: a new approach t〇CD control,” Pr〇 c. SPIE V〇l· 3332, pp·212-220, 1 9 9 8> This method uses a line/space array compared to the larger critical dimension (about 3 microns), the two arrays being adjacent to each other. When the structure is printed via focus and/or effective dose, the lines are shortened so that the space between them is widened, and this space can be measured as an image reference metric tool used in the overlay measurement technique. The technique for determining the optimum focal length is the r-diffraction characteristic difference method, or DSD' is shown in US Patent No. 6, 42 9, 9 3 nickname, inventor
Michael E· Littau 和 Christopher J. Raymond 之Michael E. Littau and Christopher J. Raymond
Determination of Center of Focus by Diffraction Signature AnalySls。 這項技術為針對散射模式之繞射 特性所作之實驗性分析。當達到最佳焦距時,鄰近對步 驟間之繞射特性差異將可以減到最低。 、’/ 另外 項被廣泛利用之決定最佳焦距技術稱作 "B〇ssung plot”法。當使用如CD-SEM或散射計等儀器之 臨界尺寸度量工具測量對焦下印刷出之選擇特徵的除i尺 寸時’其結果趨勢通常成拋物線。將一拋物線配置於此 臨界尺寸趨勢圖上,其切線為零處便為最佳焦距。、^ ^Determination of Center of Focus by Diffraction Signature AnalySls. This technique is an experimental analysis of the diffraction characteristics of the scattering mode. When the optimum focal length is reached, the difference in diffraction characteristics between adjacent steps can be minimized. , '/ Another widely used decision to determine the best focal length technique is called the "B〇ssung plot" method. When using a critical dimension measurement tool such as a CD-SEM or scatterometer to measure the selected features printed under focus In addition to the i size, the resulting trend is usually parabolic. A parabola is placed on this critical dimension trend graph, and the tangent is zero, which is the best focal length. ^ ^
1251663 五、發明說明(5) 曲線圖便稱為B 〇 s s u n g P 1 〇 t。此方法的其中一項好處是 除了維持影像之最佳對焦狀況外,其過程中之確實臨界尺 寸亦i被數量化。然而此方法在某些操作環境下並不是 永遠強韌,因而使之難以決定最佳焦距及實行自動化。 此外,當此技術與CD-SEM配合使用時,測量結果可能會被 線條侧壁角度之改變而影響,以致產生不客觀的結果。 散射計及相關儀器可應用於各種不同之操作方式。 其中一項方法為使用單一已知波長光源,其入射角0在一 以決定之連續範圍中做改變。另外一項方法為使用若干 雷射光束源·,並選擇性地將光束投射於不同之入射角0。 還有一項方法為使用一入射寬光-譜光源·,其入射光源之波 長在一定的範圍内作變化’而其入射角則選擇性地保持為 一常數。亦有各種已知之位向光組元,利用光學和過濾、 鏡以產生一個範圍之入射位向,並使用一偵測器以偵測其 結果繞射位向。另外亦可使用各種極化階段光組元,利 用光學及過濾鏡將極化光在s和p組元間做變化。亦可將 入射角在一固定範圍Φ内作調 源環繞著目標區域,或相反地 他輻射源。運用以上敘述之任 用,或排列使用’皆可能得到 除了散射計儀器外,另外有許 定零次方或更高折射級之折射 光基準源,其發出之光線可被 並由一偵測器擷取所經之光線 整,例如將光源或其他輻射 將目標物圍繞著發光源或其 何一項方法’或合併合併使 樣品目標物之繞射特性。 多其他方法和儀器是可以決 特性。其方法為利用一個 反射或傳送經一折射光栅, °其他散射計之外的方法1251663 V. INSTRUCTIONS (5) The graph is called B 〇 s s u n g P 1 〇 t. One of the benefits of this method is that in addition to maintaining the best focus of the image, the exact critical dimensions in the process are also quantified. However, this method is not always strong in certain operating environments, making it difficult to determine the optimal focal length and automate it. In addition, when this technique is used in conjunction with a CD-SEM, the measurement results may be affected by changes in the angle of the sidewalls of the lines, resulting in non-objective results. The scatterometer and associated instruments can be used in a variety of different modes of operation. One method is to use a single known wavelength source whose angle of incidence 0 is varied in a determined continuous range. Another method is to use several laser beam sources and selectively project the beam at different incident angles of zero. Another method is to use an incident wide optical-spectral light source whose wavelength of the incident light source varies within a certain range and its incident angle is selectively maintained as a constant. There are also various known positional light elements that utilize optics and filtering, mirrors to create a range of incident orientations, and use a detector to detect the resulting diffraction direction. Alternatively, various polarization stage optical components can be used to change the polarized light between the s and p components using optics and filters. The angle of incidence can also be tuned around the target area within a fixed range Φ, or conversely to the source of radiation. Using the above-mentioned appointments, or arranging the use of 'can be obtained in addition to the scatterometer instrument, there is a refracted light reference source with a predetermined zero-order or higher refraction level, and the emitted light can be detected by a detector. The ray is taken, for example, by a light source or other radiation surrounding the illuminating source or any of its methods' or combining and combining the diffraction characteristics of the sample target. Many other methods and instruments are capable of determining characteristics. The method is to use a reflection or transmission through a refraction grating, ° other methods than the scatterometer
第8頁 1251663 五、發明說明(6) 與儀器亦包括偏振光橢圓率測量儀及折射計。另外已知 的是,非光基準繞射特性亦可利用其他幅射源如X光求 得。Page 8 1251663 V. INSTRUCTIONS (6) The instrument also includes a polarized ellipsometer and a refractometer. It is also known that non-light reference diffraction characteristics can also be obtained using other radiation sources such as X-rays.
在此領域中有谷禋e知的樣品目標物被利用。一個 最簡單且被廣泛利用的樣品目標物為折射光柵,原則上是 由一系列之週期線所組成,一般而言線寬與間隔比率在]: 1到1 : 3 之間,然而也有其他已知之比率。舉例而言,一 個比率成1 : 3的折射光柵,'其線寬便為1 〇 〇 nm,而間隔便為 3 0 0 nm,總間距〈線寬加間隔〉便為4 0 0 nm。 線寬及總間 距隨印刷流程解析度而改變,因此當印刷流程可使用較小 之線寬及總間距時,相對而言光柵之線寬及總間距亦可同 樣地減少。繞射技術可應用於任何可能之線寬及總間距, 包括那些比一般現在所使用要小很多的線寬與總間距值。 另外亦有已知的雙間隔及其他多間隔結構,例如那些顯示 於2002年九月發行之美國專利第2002/0131055號。亦有 已知之三度空間光柵或結構,如美國專利第6,4 2 9,9 3 0號 所顯示。因此折射結構可具備一個以上之週期,或可由 線及間隔以外之元素所組成,例如孔、正方形、柱或類似 元素。 在晶片上之禱模内,繞射光拇通常分散為一已知圖 樣。在此技術領域中,單一晶片上可含有數個鑄模已是眾 所皆知的。每一個繞射圖樣可經印刷方法製造為不同焦 距,譬如使用不同之焦距設定或不同之曝光設定或劑量。 另外焦距中心亦可以散射模式及繞射光柵來決定。其方In this field, a sample target known to the glutinous rice is utilized. One of the simplest and widely used sample targets is a refractive grating. In principle, it consists of a series of periodic lines. Generally, the line width to spacing ratio is between 1: 1 and 1: 3, but there are others. Know the ratio. For example, a refraction grating with a ratio of 1:3 has a linewidth of 1 〇 〇 nm and an interval of 300 nm, and the total pitch <line width plus spacing> is 400 nm. The line width and total spacing vary with the resolution of the printing process, so that when the printing process can use a smaller line width and total spacing, the line width and total spacing of the grating can be reduced in the same way. The diffractive technique can be applied to any possible line width and total pitch, including those that are much smaller than the average line spacing and total spacing used today. There are also known double-spaced and other multi-spaced structures, such as those shown in U.S. Patent No. 2002/0131055, issued September 2002. There are also known three-dimensional space gratings or structures as shown in U.S. Patent No. 6, 4 2 9,9 3 0. Thus the refractive structure may have more than one period, or may be composed of elements other than lines and spaces, such as holes, squares, columns or the like. In the prayer mode on the wafer, the diffracted light is usually dispersed into a known pattern. In this art, it is known to have several molds on a single wafer. Each diffractive pattern can be manufactured to a different focal length by printing methods, such as using different focal length settings or different exposure settings or doses. In addition, the focal length center can also be determined by the scattering mode and the diffraction grating. Its side
第9頁 1251663 五、發明說明(7) 法為將各種不同焦距繞射光柵所產生之繞射特性,與產生 有關臨界尺寸之繞射光栅特性的理論性模型資料庫做比 較。實際繞射測量值與用以導出臨界尺寸之模型做比 較,所得之臨界尺寸數值以焦距值為對軸繪製出一拋物線 圖。然而,以上討論之B 〇 s s u n g P 1 〇 t法卻有著顯著之固 有限制。 【發明内容】 就一實例而言,本發明針對有關平版印刷技術方面提 供了一測量印刷參數之方法。此方法包括提供一包含印 刷流程中產生之繞射結構複數之基底的步驟,其繞射結構 包含一間隔元素複數;利用以輻射源為基準之工具測量至 少三個繞射結構複數之繞射特性;·選擇一個理論性繞射結 構,其可提供一個符合於測量繞射結構之繞射特性的理論 性繞射特性;計算每一個選擇之理論性折射結構之斷面; 以及在所計算之斷面間決定一個度量,以用來為此印刷技 術制定一個理想參數。在本發明之所有方法中,其繞射 結構可以是單一週期、雙週期、或多週期結構。斷面可以 是一個區域、一個區塊、或是兩個以上能提供符合理論性 繞射特性之理論性繞射結構參數的總合。在其中一實例 中,其參數為臨界尺寸。 在本發明之方法中,選擇一個符合測量繞射結構之繞 射特性的理論性繞射結構,其步驟包括產生一個收集理論 性繞射結構導出之理論性繞射特性的資料庫。並且進一 步由此資料庫中決定一個最符合之理論性繞射結構。此Page 9 1251663 V. INSTRUCTIONS (7) The method compares the diffraction characteristics produced by diffractive gratings of different focal lengths with a theoretical model database that produces the characteristics of diffraction gratings of critical dimensions. The actual diffraction measurements are compared to the model used to derive the critical dimension, and the resulting critical dimension values are plotted against the axis as a parabola plot. However, the B 〇 s s u n g P 1 〇 t method discussed above has significant limitations. SUMMARY OF THE INVENTION In one embodiment, the present invention provides a method for measuring printing parameters in relation to lithographic techniques. The method includes the steps of providing a substrate comprising a plurality of diffractive structures produced in a printing process, the diffractive structure comprising a plurality of spacer elements; and measuring a diffraction characteristic of the complex of at least three diffractive structures using a tool based on the radiation source Selecting a theoretical diffraction structure that provides a theoretical diffraction characteristic that is consistent with the diffraction characteristics of the measured diffraction structure; calculates a section of each selected theoretical refractive structure; and calculates the fracture A metric is determined between the faces to create an ideal parameter for this printing technique. In all of the methods of the present invention, the diffraction structure may be a single cycle, a double cycle, or a multi-cycle structure. The section can be a region, a block, or a sum of two or more theoretical diffraction structure parameters that provide theoretical diffraction characteristics. In one of the examples, the parameter is a critical dimension. In the method of the present invention, a theoretical diffraction structure conforming to the diffraction characteristics of the measurement diffraction structure is selected, the steps of which include generating a library of theoretical diffraction characteristics derived from the theoretical diffraction structure. And further determine the most reasonable theoretical diffraction structure from this database. this
1251663 五、發明說明(8) 度量值包括將所計算之斷面繪製成圖或決定所計算之斷面 間之差異。 就另一實例而言,本發明提供一個在印刷技術中決定 焦距中心的方法。其方法包括提供一包含利用印刷裝置 產生之繞射結構複數之基底的步驟,其繞射結構複數包括 不同的已知焦距設定;利用輻射源基準工具測量至少三個 繞射結構複數之繞射特性;提供一個理論性繞射結構之繞 射特性的資料庫;決定一個最符合每一測量繞射特性之理 論性繞射特性;計算每一個提供最符合理論性繞射特性之 理論性繞射結構的斷面;以及決定一個焦距中心以作為焦 距設定之依據,而此焦距設定具備相鄰繞射光柵焦距設定 斷面間 <之最小差異。在此方法中,相鄰繞射結構焦距設 定間之斷面差異的變化大約呈現為一個拋物曲線,切線為 零處為最小差異。最小差異之決定包括將相鄰之連續性繞 射光柵焦距設定間之斷面差異所導出之數據套用在一個拋 物曲線上,而此最小差異將與拋物線上之最小處呈相符狀 態。在這些方法中,不同焦距設定之繞射結構的斷面可 被繪製成一為焦距函數之方程圖。 本發明所使用之方法進一步提供在印刷技術中所需之 焦距中心的製程監控,其方法包括提供一個包含使用印刷 技術所產生之潛伏性影像繞射結構複數之基底的步驟,其 繞射結構複數包括不同的已知焦距設定;利用輻射源基準 工具測量至少三個潛伏性影像繞射結構複數之繞射特性; 提供一個理論性繞射結構之繞射特性的資料庫;決定一個1251663 V. INSTRUCTIONS (8) Metrics include plotting the calculated section into a map or determining the difference between the calculated sections. In another example, the present invention provides a method of determining the center of focus in a printing technique. The method includes the steps of providing a substrate comprising a plurality of diffraction structures produced by a printing device, the diffraction structure comprising a plurality of different known focal length settings; and measuring a diffraction characteristic of the plurality of diffraction structures at least three of the diffraction structures using a radiation source reference tool Providing a database of diffraction characteristics of a theoretical diffraction structure; determining a theoretical diffraction characteristic that best fits each measurement diffraction characteristic; calculating each theoretical diffraction structure that provides the most theoretical diffraction characteristics And the determination of a focal length center as the basis for the focal length setting, and this focal length setting has the smallest difference between the adjacent diffraction grating focal length setting sections. In this method, the change in the cross-sectional difference between the focal lengths of adjacent diffraction structures is approximately a parabola curve, and the tangential line is the smallest difference at zero. The decision of the minimum difference involves applying the data derived from the difference in the profile between adjacent focal diffraction grating focal length settings on a parabolic curve that is consistent with the minimum of the parabola. In these methods, the cross-section of the diffractive structure with different focal length settings can be plotted as an equation for the focal length function. The method used in the present invention further provides process monitoring of the focal length center required in printing techniques, the method comprising the steps of providing a substrate comprising a plurality of latent image diffraction structures produced using printing techniques, the diffraction structure of which Including different known focal length settings; measuring the diffraction characteristics of the complex number of at least three latent image diffraction structures using a radiation source reference tool; providing a database of diffraction characteristics of the theoretical diffraction structure;
第11頁 1251663 五、發明說明(9) 最符合每一測量繞射特性之理論性繞射特性;計算每一個 理論性繞射結構之斷面以提供一個最符合之理論性繞射特 性;決定一個焦距中心以作為焦距設定之依據,而此焦距 設定具備相鄰潛伏性影像繞射結構焦距設定斷面間之最小 差異;以及調整印刷技術中之焦距值使其符合已測定之焦 距中心。在此方法中,印刷焦距設定之調整可包括一個 以電腦為基準之控制系統,亦可包括一個自動對焦系統, 其中至少一項輸入資料需包括一個有關斷面間差異之參 數。Page 11 1251663 V. INSTRUCTIONS (9) The theoretical diffraction characteristics that best match the diffraction characteristics of each measurement; calculate the cross section of each theoretical diffraction structure to provide a theoretical diffraction characteristic that best fits; A focal length center is used as the basis for the focal length setting, and the focal length setting has the smallest difference between the focal length setting sections of the adjacent latent image diffraction structures; and the focal length value in the printing technique is adjusted to conform to the measured focal length center. In this method, the adjustment of the print focus setting may include a computer-based control system, or an auto-focus system, at least one of which may include a parameter relating to the difference between the sections.
在所有·前述之方法中,幅射源基準工具包括光源基準 工具。就一實例而言,光源基準工具包括一個入射雷射 光束源、一個將雷射光束對焦並且掃描通過一個範圍之入 射角的光學系統,以及一個在結果測量角度上偵測結果繞 射特性的偵測器。光源基準工具可進一步包括一個角度 解析散射計。就另一不同之實例而言,光源基準工具包 括了一個雷射光束源複數。還有一個實例為,一光源基 準工具包括了入射寬光譜光源、一個將光束對焦並且在一 個範圍之入射波長内作光照,變化之光學系統,以及一個在 結果測量波長上偵測結果繞射特性之偵測器。尚有一個 實例為,一光源基準工具包括了 一個入射光源、用以改變 S及P極之振幅和位相之組元、一個將光束對焦並且在一個 範圍之入射位向内作光照變化之光學系統,以及一個用以 偵測結果繞射特性位向之偵測器。 在所有前述之方法中,測量一個繞射特性的步驟包括In all of the foregoing methods, the radiation source reference tool includes a light source reference tool. In one example, the light source reference tool includes an incident laser beam source, an optical system that focuses the laser beam and scans through a range of incident angles, and a detection of the diffraction characteristics of the resulting measurement at the resulting measurement angle. Detector. The light source reference tool can further include an angular resolution scatterometer. In another different example, the light source reference tool includes a complex number of laser beam sources. In another example, a light source reference tool includes an incident wide spectral source, an optical system that focuses the beam and illuminates at a range of incident wavelengths, and an optical system that detects the resulting diffraction wavelength at the resulting measurement wavelength. Detector. In one example, a light source reference tool includes an incident light source, a component for varying the amplitude and phase of the S and P poles, an optical system that focuses the beam and illuminates inwardly over a range of incident positions. And a detector for detecting the resulting diffraction characteristic. In all of the foregoing methods, the step of measuring a diffraction characteristic includes
第12頁 1251663 五、發明說明(ίο)Page 12 1251663 V. Description of invention (ίο)
藉由一個以寬頻t普輻射源為基礎之工具源所作之位向測 量,操作於一個固定角度,以及一個可變性角度0或可變 性角度Φ。 在這些方法中,測量一個繞射特性的步驟亦 可包括藉由一個以單一波長幅射源為基礎之工具源所作之 位向測量,操作於一個固定角度,以及一個可變性角度0 或可變性角度Φ。 測量一個繞射特性的步驟亦可包括藉 由一個以多重離散波長幅射源為基礎之工具源或一個以寬 頻譜源為基礎之工具源所作之位向測量。繞射特性可以 是一反射繞射特性或一傳導性繞射特性。繞射特性可以 是一反射常態繞射特性或一更高常態之繞射特性,正值或 負值皆可。 本發明一個主要目的為提供一個有·關印刷裝置中測量 參數之方法,不需借助使用光學,SEM或其他類似顯微度 量工具。 本發明另一個目的為提供一個印刷裝置中決定焦距中 心之方法。其方法為針對在一系列不同焦距值之繞射結 構中找出最符合之理論性繞射特性作斷面分析,並利用此 斷面來決定焦距中心。The position measurement by a tool source based on a broadband source is operated at a fixed angle and a variability angle of 0 or a variability angle Φ. In these methods, the step of measuring a diffraction characteristic may also include a direction measurement by a tool source based on a single wavelength radiation source, operating at a fixed angle, and a variability angle of 0 or variability. Angle Φ. The step of measuring a diffraction characteristic may also include the measurement of the orientation by a tool source based on multiple discrete wavelength sources or a tool source based on a wide spectrum source. The diffraction characteristic can be a reflection diffraction characteristic or a conductive diffraction characteristic. The diffraction characteristic may be a reflection normal diffraction characteristic or a higher normal diffraction characteristic, either positive or negative. It is a primary object of the present invention to provide a method of measuring parameters in a printing apparatus without the use of optical, SEM or other similar microscopic metric tools. Another object of the present invention is to provide a method of determining the center of focus in a printing apparatus. The method is to find the most suitable theoretical diffraction characteristics in a series of diffraction structures with different focal length values, and use this section to determine the focal length center.
本發明另一個目的為提供一個有關印刷裝置中決定或 測量參數如焦距中心之方法。此方法為利用反射性或傳 導性繞射導出繞射特性,並將此繞射特性與一理論性模型 資料庫作比較,由此選出一個最符合之理論性繞射特性, 並決定此理論性繞射結構之斷面以求得一個最符合之繞射 特性。Another object of the present invention is to provide a method for determining or measuring parameters such as the center of focus in a printing apparatus. This method is to use the reflective or conductive diffraction to derive the diffraction characteristics, and compare the diffraction characteristics with a theoretical model database, thereby selecting a theoretical diffraction characteristic that best matches the theory. Draw the cross section of the structure to find the most suitable diffraction characteristics.
第13頁 1251663 五、發明說明(11) 本發明另一個目的糸 測量參數如焦距中、、=i t 個有關印刷裝置中決定或 生出一個繞射特性r此方法為利用任何方式產 性角度解析、變數货真方3 y包括但不限於反射性或傳導 取向繞射,或以上方、’交數位向、變數極化狀態或變數 級或任何更高級數。 合併’以求得零次方或反射折射 本發明另一個目的立担乂4 測量參數之方法。二個有關印刷裝置中決定或 射結構之任何一個階級之同;、距重複或週期性繞 射級或任何更高級數,‘=皆5括零次方或反射折 本發明一個主要優墊糸 似顯微度量工具來“學:SEM或其他類 丄V w p刷裝置中之參數。 本务明另一個優勢為,可在由牛 _ 钱劑印刷方法,所製造之傳絶=7 I t之光阻刻 焦距繞射結構或光栅,並利以使用-糸列之不同 以決定焦距中心。並且將型所決定之結構斷面 函數之方程圖。 字此斷面或其導數緣製成一為焦距 本發明另一個優勢為,提彳&在 中,取得結果如焦距中心的裝置,如步進器 傳統及已知方法快速和廉:方法與裳置,Λ方法與裂置較 本發明其他目的、優勢 嘴將在以下之細節討論中以及進-步之應用範 透過檢視以下討論之内s,: = ’並佐以圖式解說。 本舍月將對於那些擅長於本領Page 13 1251663 V. INSTRUCTIONS (11) Another object of the present invention is to measure or generate a diffraction characteristic in a measurement parameter such as a focal length, == related to a printing device. The variable true 3 y includes, but is not limited to, a reflective or conduction-oriented diffraction, or an upper, 'crossing position, variable polarization state or variable level or any higher order number. Combining 'to find zero power or reflectance Another object of the present invention is to determine the method of measuring parameters. Two of the same factors relating to the determination or the structure of the structure in the printing device; from the repeating or periodic diffraction level or any higher order, '= all 5 inclusive or refractions. Similar to the microscopic measurement tool to "learn: SEM or other parameters in the wV wp brush device. Another advantage of this service is that it can be produced by the method of printing by cattle - money agent = 7 I t The photoresist engraved focal length diffracts the structure or grating, and uses the difference between the -column to determine the focal length center, and the equation of the structural section function determined by the type. The section or its derivative edge is made into one Focal length Another advantage of the present invention is that the device for obtaining results such as the focal length center, such as the stepper conventional and known methods, is fast and inexpensive: the method and the skirting, the method and the cracking are more than the other The purpose and advantage of the mouth will be discussed in the following details and the application of the step-by-step by examining the following discussion:: = ' and accompanying the schema explanation. This month will be good for those who are good at
1251663 五、發明說明(12) 域之人士呈現某種程度之表面化,或者可經由練習而習 之。本發明之目的及優勢可經由輔助工具及特別在附加專 利申請範圍說明中所指出的組合加以實現及完成。 【實施方式】 本發明就有關印刷裝置方面提供測量印刷參數之方法 與儀器,而其中一項首選之實例為印刷裝置中焦距中心之 決定。在光阻刻蝕劑印刷晶片製程之開發過程中,一固定 劑量下之焦距中心的決定是非常緊要的。此外,劑量的變 數可使決定焦距中心的困難度複數化。步進器中使用之鏡 頭具備相當有限之焦距深度,因此極度精準度是有必要 的。正確對焦下之鏡頭將產生較清晰之印製光阻刻蝕劑 影像,而缺乏正確對焦將產生開發不完全之光阻刻蝕劑影 像,以及一般而言較差之過程結果。位於焦距中心,或者 說最佳焦距,能夠改善過程之可重複性及穩定性。 在前進至更多有關本發明之敘述,需先給予以下定 義。所謂平版印刷技術是指任何一個利用一影像,如光 罩,以傳遞一個圖樣至,並立選擇性地進入一個基底的設 備。因此此設備包括傳統的光學印刷術,如光阻刻蝕劑印 刷術,然而亦包括其他印刷方法。光阻刻蝕劑印刷術,亦 稱為微影技術,是利用光學方法將電路影像自主要影像, 稱為光罩或光學網線,傳送至晶片上。在此過程中,一個 或以上之特製原料,稱為防染劑,被塗在用來製造電路之 晶片上。塗抹一層防染劑是必要的,而且其晶片必須經過 如軟烘等方法之處理。正防染或負防染光阻刻蝕劑原料皆1251663 V. INSTRUCTIONS (12) The person in the domain presents a certain degree of superficiality or can be learned through practice. The objects and advantages of the invention may be realized and attained by the <RTIgt; [Embodiment] The present invention provides a method and apparatus for measuring printing parameters in relation to a printing apparatus, and one preferred example is the determination of the center of focus in the printing apparatus. In the development of a photoresist etched wafer process, the decision of the focal length center at a fixed dose is very important. In addition, the dose variable can be used to determine the difficulty of determining the center of focus. The lens used in the stepper has a fairly limited focal depth, so extreme precision is necessary. A lens that is properly focused will produce a sharper image of the printed photoresist etchant, and the lack of proper focus will result in the development of incomplete photoresist etchant images, as well as generally poor process results. Located at the center of the focal length, or the best focal length, improves process repeatability and stability. In moving forward to more descriptions of the invention, the following definitions need to be given. The lithographic technique refers to any device that utilizes an image, such as a reticle, to transfer a pattern to and selectively enter a substrate. This device therefore includes conventional optical printing, such as photoresist etch printing, but other printing methods are also included. Photoresist etchant printing, also known as lithography, uses optical methods to transfer circuit images from a primary image, called a reticle or optical network, to a wafer. In this process, one or more special materials, called anti-staining agents, are applied to the wafer used to fabricate the circuit. It is necessary to apply a layer of anti-staining agent, and the wafer must be processed by a method such as soft baking. Positive anti-dyeing or negative anti-dye photoresist etchant raw materials
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五、發明說明(13) __________ 义用。正防染劑通常在被當作防染顯影劑之料 疋不溶解的,但是當曝光於光線下時則變為可溶的" 沾防染劑通常在被當作防染顯影劑料。 的,但是當曝光於光線下則變為不溶^原: 防染劑曝光於某些區域而非其他區域時,電ς之,, 他結構將產生於防染劑軟片上。在光學印中袠或二 擇性之曝光是由一個光罩之成像所達# :,其選 Λ ,., 早风像所運成的,通常是蔣氺綠 二在光罩上,並將其傳送之影像投射在防半劑軟月卜、 :ΓΓ所引用之印刷設傷包括-個步進器以Ϊ片 個光罩投射至一個塗 他、,,。構之衫像從一 包括读笋焱八上、広 卞d之日日片一個典型的步進哭 ?括透鏡與舍先源、準分子雷射光源、晶片A 段進- 量、晶片E ’以及—個作業員工作站二:;網線 及負防染法,並且運原始的步和重複 t j用正防染 式,或者兩者合併使用。 、式或者V和掃描模 在本發明之操作上應用一個晶片或复 置了由印刷設備所產生之一系射二土 &,其上安 方式來說,一個繞射姓 、凡射〜構。以最簡單的 構或影像。此印鳴所產生之結 的週期性變化。此反射指數的改變可以2 :反射指數 異,亦可是化學性差異。物理為物理性差 其他平版印刷術所產生:::由光阻刻餘劑或 輕合之折射指數的原料,㉟如—個具有與空氣 柵,或一個與不同;^料叙二般可侍到之光學繞射光 不门原枓輕合之原料。化學性 第16頁 1251663 五、發明說明(14) =:1蝕劑曝光之繞射結構的晶片,例如一個防毕劑尚 '开’,:先柵。在這個情形中,所有的防 :二 i之曝:r::具有-個…未曝光防^部 :::r繞射結構 =請得到的。-個繞射結構可以是單-週期= j,亦可是多週期的。此結構因此包括由一系列平 ^ ^ ^ 、之傳統繞射光栅,但亦包括一個三度空間二柱陣 =陣列的結構,其中在χ方向及γ方向皆具週期性柱陣 圖d顯不一個方Υ 士 & 〗Γ則韶 1U在1方向及γ方向皆具週期性之繞射結構。圖 社2 ”、員不在一個方向具週期性並由平行線25所組成之繞射 ^ 繞射結構因此包括光阻刻蝕劑'光柵、蝕刻軟片疊 #二i i屬光柵及其他在本領域中已知之光柵。一個繞&射 :又具有一個線寬及間隔在1 : 1至1 : 3之間的比率,然 率^ ^比率也同樣被應用。一個典型具有比方說1 : 3之比 ^。'二射^光柵,將有一個100nm的線寬及一個40 0ηιη的總間 ^ 泉見與總間距可以為一較小值,部分決定於印刷 置T的解析度。 、 f此發明中,一個繞射結構是用來產生一個繞射特 嗬射許個繞射特性可以由多種儀器中任何一種產生,例如 1生射!!圓偏光儀’或者反射計。任何-個利用輻射來 一 '寸性的儀器在此都被稱為一輻射源基準工1。 二】:言,一個可見性幅射源基準工具如光線源基準工具 曰…用,但是此輻射源可以是非可見性輻射,例如χ光V. Description of invention (13) __________ Meaning. Positive anti-staining agents are usually insoluble in materials that are used as anti-staining agents, but become soluble when exposed to light. The anti-staining agent is usually used as an anti-staining developer. However, when exposed to light, it becomes insoluble. ^ Original: When the anti-staining agent is exposed to certain areas instead of other areas, the structure will be generated on the anti-dye film. In the optical printing, the exposure or the selective exposure is achieved by the imaging of a reticle #:, its selection, ., the image of the early wind, usually the 氺 氺 green on the reticle, and The transmitted image is projected on the anti-half agent soft moon, and the printing damages cited by ΓΓ include a stepper that projects a reticle to a coating. The shape of the shirt is a typical stepping from the day of reading the bamboo shoots, the day of the film, the lens and the source, the excimer laser source, the wafer A segment, the wafer E ' And an operator workstation 2:; network cable and negative anti-dyeing method, and the original step and repeat tj with positive anti-dye, or a combination of the two. , or V and scanning dies are applied to a wafer or a device that is produced by a printing device to sing two soils and amps in the operation of the present invention. . With the simplest structure or image. The periodic variation of the knot produced by this impression. This change in the reflectance index can be 2: the reflectance index is different, or it can be a chemical difference. Physically, the physics is poor. Other lithography produces::: The raw material of the refractive index by the photoresist or the lightness of the refractive index, 35 such as one with the air grid, or one different; The optical diffracted light is not the raw material of the original light. Chemicals Page 16 1251663 V. INSTRUCTIONS (14) =: 1 The wafer of the diffraction structure exposed by the etchant, for example, a crack-proof agent is still 'on',: the first gate. In this case, all the defenses: the exposure of the two i: r:: has - an ... unexposed anti-mechanism ::: r diffraction structure = please get. - A diffraction structure can be single-cycle = j or multi-cycle. The structure thus includes a series of flat diffraction gratings, but also includes a three-dimensional space two-column array=array structure in which periodic column diagrams d are displayed in both the x-direction and the gamma-direction. A square gentleman & Γ 韶 韶 1U has a periodic diffraction structure in both the 1 direction and the γ direction. Figure 2", the member is not in a direction with a periodicity and consists of a parallel line of 25 diffraction diffraction structure thus including photoresist etchant 'grating, etching film stack #二ii genus grating and others in the field A known grating. A winding & shot: has a line width and a ratio of between 1: 1 and 1: 3, and the ratio ^ ^ ratio is also applied. A typical ratio of 1: 3 ^.'Two-shot grating, there will be a 100nm line width and a total of 40 0ηιη, and the total spacing can be a small value, depending in part on the resolution of the printed T. A diffraction structure is used to generate a diffraction characteristic. A diffraction characteristic can be generated by any of a variety of instruments, such as a live shot!! Circular Polarizer' or a reflectometer. Any one uses radiation to 'Inch instruments are referred to herein as a source reference. 1. Two]: A visible source reference tool, such as a source reference tool, can be used, but the source can be non-visible radiation. Such as dawn
第17頁 1251663Page 17 1251663
五、發明說明(15) ;射=:丨:的繞::性是由-將如光線…反射之 散射計所產m 個繞射特性可由—角度解析 射角0 一 P A 4 ~個單一已知波長源被利用,其入 果繞射:性可二敘=範圍而改變’如圖2所示。其結 0為兩轴所洽制之方:〜一以光線強度與入射和反射角度 源:::所、程圖。…方法中,許多雷射光束 還有1方^ 選擇性土也入射於不射角卜 在一波+範圍中你個入射寬頻譜光源被利用,其入射光 數,如h\所 ,而入射角Θ選擇性地維持-個常 以伯tiT:二各種利用一個範圍之入射位相與-個用 ^的極不化^種利用一個從⑴組元或⑴‘组元之極化 射角度使i光:;!:人知…卜亦可能在範圍”調整入 光界作環^ :衣、、凡於繞射結構,或者將繞射結構相對於 m,如圖2所示。利用這些多種設備中任何一 二心::2用’或排列使用’ •可能並且已為人知地從 “ΐ構上取得一繞射特性。一般…戶“貞測 入射光線波ΐ與至少—個變化性參數,如人射角θ、 為兩細洽制^入射光線位向、掃略角①或其他類似元素 衣方程圖。繞射特性可以代表零次方或反射 亦次了代衣一更回繞射常態。一個傳導性模式 用 、’ 被重視於應用在產生一個繞射特性,例如利 用一個X光^射源作為輻射源基準工具之組元。 在本务明的操作中,產生了一個繞射結構及其對應之V. Description of invention (15); Shooting =: 丨: The winding:: Sex is caused by - The astigmatism of the ray ray reflected by the ray can be obtained by - angle analysis of the angle of incidence 0 - PA 4 ~ a single Knowing that the wavelength source is utilized, its effect is diffracted: the sex can be changed by the range = as shown in Fig. 2. The knot 0 is the square of the two axes: ~ one with light intensity and angle of incidence and reflection Source:::, and the map. In the method, many laser beams have one square. Selective soil is also incident on the non-angle. In a wave+ range, your incident wide-spectrum light source is utilized, and the incident light number, such as h\, is incident. The horns are selectively maintained - a constant tiT: two kinds of incident phase with one range and one with a minimum of one using a polarized angle from (1) or (1)' Light: ;!: People know... Bu may also adjust the scope into the light circle as: ^, clothing, in the diffraction structure, or the diffraction structure relative to m, as shown in Figure 2. Using these various devices Any one or two hearts: 2 use 'or arrange for use' • It is possible and known to obtain a diffraction characteristic from the structure. Generally, the households "measure the incident light wave and at least one variability parameter, such as the human angle θ, the two fine-grained ^ incident light direction, the sweep angle 1 or other similar element clothing equation. Diffraction characteristics It can represent the zeroth power or the reflection, and it is the second time to return to the normal state. A conductive mode, 'is valued for application in generating a diffraction characteristic, such as using an X-ray source as a radiation source reference tool. In the operation of this service, a diffraction structure and its corresponding
第18頁 1251663Page 18 1251663
性的理 射特性 數目之 輸出信 可以在 性與理 所使用 而產生 猜測的 將其計 個最佳 為主來 繞射結 可選擇 由參考 索引可 作相互 作排列 庫,並 射特性 來達成 是基於 之實際 特性做 資料庫 ’ 和'— 以及-^ 覆地與 一個繞 如經由 由另一 移除信 之其他 方法將 生,並 資料庫 域中被 方程式 學信號 之函數 著,根 ’包括The output signal of the number of sexual physio-chemical characteristics can be used in the nature and rationality to generate the guess. The best way to circulate the knot can be selected by the reference index, and the characteristics can be achieved. Based on the actual characteristics of the database 'and' - and - ^ overlay and a wrap around by other methods of removing the letter, and the function of the equation in the database domain, the root 'includes
且將基於理論性繞射 作比較。此理論性資 。在'"力"法中’ ^一個 指定變數參數而產 測量前,亦或可以在 匹配之過程中被產 同時包#一個獨立於 個基於測量結構幾何 個理論性繞射特性結 改變之結構參數作比 射特性之理論性資料 繞射結構之繞射特性 可替代之方法所測 號來加以修剪,而此 信號的内差來代表。 每一特性與一個或以 基於此 的構成 廣泛認 之精確 特性, 。在此 據這些 其光學 五、發明說明(16) 理論性繞射特 ,構所得之繞 =庠可以任何 貝'隱的理論性 生。此資料庫 將蜊量繞射特 生。因而在此 別量繞射特性 ^埋論性最佳 果的計算,且 較,以決定一 Ϊ亦可以實驗 2收集,其中 ^。此資料庫 ^銳可精確地 〜個資料庫的 ^之索引功能 又為此索引 使其最佳化之 1貝方法中,一 使用來計算一 的預測值,並 =射結構之試 吁以電腦描繪 論性資料 與測量繞 不同方法 號資料庫 繞射特性 論性繞射 之理論性 之資料庫 資料庫, 异結果反 符合值。 產生,例 構尺寸是 性地經由 設定值中 藉由類似 關聯而產 。這一類 方法,皆在本領 個基於Maxwell 個繞射結構之光 為繞射結構參數 驗值被選用。接 之繞射結構模型 相關聯性的量 與形成,以及 識。在其中_ 理論性模型被 例如繞射特性 過程中’一組 數值構成一個 原料及幾何。 1251663And will be based on theoretical diffraction. This theoretical capital. In the '"force" method' ^ before a specified variable parameter is produced, or it can be produced in the process of matching. A separate from the theoretical diffraction characteristic of the measured structure geometry. The structural parameters are used as theoretical data. The diffraction characteristics of the diffraction structure can be trimmed instead of the measured number of the method, and the internal difference of this signal is represented. Each characteristic is distinguished from one or the exact characteristics based on this composition. According to these optics, the invention (16) theoretical diffraction, the structure of the winding = 庠 can be any theoretical theory of the hidden. This database will measure the amount of diffraction. Therefore, in this case, the diffraction characteristic is calculated, and the calculation of the optimal fruit is performed, and the comparison can be determined by experiment 2, where ^. This database can be precisely ~ the index function of a database and the index is optimized for the 1 Bay method, one used to calculate a predicted value, and = the structure of the test call to the computer Descriptive data and the theoretical database database for measuring the diffraction of the diffraction characteristics of different method numbers, and the different results are inconsistent. The resulting size is qualitatively produced by a similar association via the set values. This type of method is selected in the light of the diffraction structure parameters based on the Maxwell diffraction structure. The amount of correlation between the diffraction structure model and the formation, as well as the knowledge. In which _ the theoretical model is, for example, the diffraction characteristic process, a set of values constitutes a material and geometry. 1251663
五、發明說明(17) 繞射結構與光照輻射間的電磁反應被數字化模擬以計嘗一 個繞射特性的預測值。各種最佳配置演算法中任何一 ^比 可被利用來調整繞射結構參數值,其過程被反覆地重 '二 將測量之繞射特性與預期之繞射特性間的差異減到最 因而得到一個最佳符合值。美國發行之專利/申請第1 / , 2 0 0 2 / 0 0 4 6 0 0 8號中記有一結構辨識之資料庫法,同時美國 發行之專利申請第U s· 2 0 0 2/ 0 0 3 8 1 9 6號中記有另一項方 法。同松地,美國發行之專利申請第U. s. 2⑽2 / 〇 1 3 5 了 8 3V. INSTRUCTIONS (17) The electromagnetic response between the diffractive structure and the illumination is digitally simulated to account for a predicted value of the diffraction characteristic. Any of a variety of optimal configuration algorithms can be utilized to adjust the value of the diffraction structure parameter, the process being repeated repeatedly to reduce the difference between the diffraction characteristics of the measurement and the expected diffraction characteristics. A best match value. US Patent/Application No. 1 / , 2 0 0 2 / 0 0 4 6 0 8 contains a database method for structural identification, and US patent application U s· 2 0 0 2/ 0 0 There is another method in the 3 8 1 9 6 note. Tongsong, the US issued patent application U. s. 2(10)2 / 〇 1 3 5 8 3
號記有各種理論性資料庫法,正如美國發行之專利申請第 U· S丄2 0 0 2/ 0 0 3 8 1 9 6號所記内容一樣。可被利用在一理論 II資料庫中之繞射結構參數包括了任何一個可以模型表示 之參數,其中包含了以下因數: • 結構底端及/或頂端之臨界尺寸。 •高度及厚度,例如一個線條、柱或其他結構之厚度 與高度。 參 由繞射特性所界定之區域的總高。 ❿一個結構的形狀,例如長方形、三角形、圓形或其 他幾何形狀。 /The number has a theoretical database method, as described in U.S. Patent Application No. U.S. 2 0 0 2/0 0 3 8 1 196. The diffraction structure parameters that can be utilized in a theoretical II database include any parameters that can be modeled, including the following factors: • The critical dimensions of the bottom and/or top of the structure. • Height and thickness, such as the thickness and height of a line, column or other structure. The total height of the area defined by the diffraction characteristics.形状 The shape of a structure, such as a rectangle, triangle, circle, or other geometric shape. /
• 一個結構或區域底端及/或頂端之曲率半徑。 • 光柵之週期。 • 線條或其他結構寬度。 • 結構之原料參數,包括各層之參數。 • 一個基底之原料’其上一個結構被安置,例如一個 軟片厚度以及結構底下之軟片折射指數。• The radius of curvature of the bottom and/or top of a structure or area. • The period of the raster. • Line or other structure width. • Raw material parameters of the structure, including parameters for each layer. • The material of a substrate' is placed on its previous structure, such as the thickness of a film and the refractive index of the film underneath the structure.
第20頁 1251663 五、發明說明(18) # 各種測重值或平均值,例如一指定位置上之臨界尺 寸,以及由結構及基底之相關作用所作之測重值, 或類似數值。 在本發明之執行中,一個在比較於測量繞射特性後之 具有最符合理論性繞射特性之繞射結構的斷面被計算。在 本發明的意義中,斷面便是一個最佳結構中至少兩個繞射 特性參數的總和。就一實例而言,斷面為一個斷面區域, 例如臨界尺寸與高度的總和。就另一實例而言,斷面為一 個斷面區塊,例如一個結構之臨界尺寸、高度與形狀的總 和 。 然而,在此所使用的斷面不須為幾何學中所定義之形 狀;意思就是斷面可以是任何兩個以上繞射結構參數的總 和。在一實例中,斷面包括臨界尺寸和至少一個附加之繞 射結構參數。在此所使用的方法中,「至少兩個繞射結構 參數的總和」意指此至少兩個參數之任何數學上的操作或 處理,包括但不限制於包含乘法之數學式操作方法,並且 選擇性地包括至少一個副數學式操作方法。 一個與測量繞射特性符合或最符合之理論性繞射特性 之斷面可以由本領域中任何一項已知的方法計算。就一實 例而言,此可包括相匹配之測量繞射特性與一個現有資料 庫中之分立且存在的理論性繞射特性,例如透過各種使用 界定限制之匹配演算法以選擇一個最佳匹配值。就另一實 例而言,最佳匹配值可包括資料庫插補法以便取得一個理 論性繞射特性,即使此繞射特性在插補之前並不存在。另Page 20 1251663 V. INSTRUCTIONS (18) # Various weighting values or average values, such as critical dimensions at a given location, and weighting values made by the associated effects of the structure and substrate, or similar values. In the practice of the present invention, a section having a diffraction structure having the most theoretical diffraction characteristics after comparison with the measurement of the diffraction characteristics is calculated. In the sense of the invention, the section is the sum of at least two diffraction characteristic parameters in an optimum configuration. For an example, the section is a section area, such as the sum of the critical dimension and height. In another example, the section is a section block, such as the sum of the critical dimensions, height, and shape of a structure. However, the section used herein does not have to be a shape defined in geometry; meaning that the section can be the sum of any two or more diffraction structure parameters. In one example, the section includes a critical dimension and at least one additional diffraction structure parameter. In the method used herein, "the sum of at least two diffraction structure parameters" means any mathematical operation or processing of the at least two parameters, including but not limited to mathematical operations including multiplication, and selection Optionally, at least one sub-mathematical method of operation is included. A section of the theoretical diffraction characteristic that meets or best matches the measurement of the diffraction characteristics can be calculated by any method known in the art. For an example, this may include matching measurement diffraction characteristics and discrete and existing theoretical diffraction characteristics in an existing database, such as selecting a best match value through various matching algorithms using defined limits. . In another example, the best match value may include a database interpolation method to achieve a theoretical diffraction characteristic even though the diffraction characteristic does not exist prior to interpolation. another
第21頁 1251663 步包括平均 抽樣的理論 之繞射特性 法或技術, 值。 布了 一系列 言代表所在 ,如一步進 門打開時, ,因而同時 ,當快門打 被曝光,因此也只有一 何一個情形下,光網或 生。此繞射 其焦距可選 柵群2 0中之 是由一系列 同劑量之繞 栅群2 0是由 能隨著一已 光柵使用一 光柵群2 0的 不論是劑量 明之另一項實例中,一個晶片1 及相關模型以呈報一個基於資料庫 性繞射特性。因此,任何用以識別 與不管如何得到之理論性繞射特性 皆可在此被利用以取得一個匹配值 如圖1 A所 每一個鑄模,如圖1 β所 ’而此部份之晶片代表 區。在一個重複步驟系 曝光的區域 。在〜步驟 網或光罩會 曝光 五、發明說明(19) 外亦可進一 中繞射特性 或將報告中 作匹配之方 或最佳匹配 在本發 示’其上分 示’—般而 了印刷設備 統中,當快 都會被照明 掃描系統中 柵群20之產 柵所組成, 2 2為繞射光 射光柵群2 0 同焦距但不 中,繞射光 成,並最好 中所有繞射 成部份繞射 一個鑄模, 之鑄模1 5。 部分的晶片 器中之曝光 光網或光罩 將整個鑄模 開時,只有 部份的鑄模 光罩可以被 光柵群20是 擇性地不同 一部份。另 相同之繞射 射光柵所組 一系列不同 知且為遞增 固定劑量。 例子。從晶 範圍或是焦 上整個將被 曝光區曝光 一部份的光 曝光區會被 移動以導致 由一系列不 。圖1 C所示 外亦有可能 光栅,或是 成。在一首 焦距之繞射 之焦距步驟 繞射光柵2 2 片10上之— 距設定範圍 在任 一個繞射光 同之繞射光 之繞射光栅 的是’此繞 由一系列相 選之實例 光桃所組 而改變,其 描述〜個形 個I鱗模到另 或是兩者Page 21 1251663 Steps include the theory of average sampling, the diffraction characteristics method or technique, value. A series of words are represented, such as when a stepper door is opened, and at the same time, when the shutter is exposed, there is only one case where the optical network is born. The diffraction of the focal length of the selectable gate group 20 is determined by a series of identical doses of the group of gates 20, which can be used with a grating that uses a grating group 20, regardless of the dose. A wafer 1 and associated model to present a database-based diffraction characteristic. Therefore, any theoretical diffraction characteristics used to identify and obtain it can be utilized here to obtain a matching value for each of the molds shown in Figure 1A, as shown in Figure 1 for the portion of the wafer representative area. . The area exposed in a repeating step. In the ~step net or reticle exposure 5, the invention description (19) can also enter a diffractive characteristic or match the matching party or the best match in the presentation 'distribution' - generally In the printing equipment system, it will be composed of the grid of the gate group 20 in the illumination scanning system, 2 2 is the diffracted grating group 2 0 with the focal length but not, the diffracted light, and preferably all the diffraction Partially diffracting a mold, the mold is 15 . When a portion of the wafer is exposed to the web or reticle, only a portion of the mold mask can be selectively differentiated by the grating group 20. The same diffraction grating has a different set of known and incremental fixed doses. example. The entire exposed area of the light that will be exposed from the exposed area from the crystal range or focus will be moved to cause a series of not. It is also possible to use a grating as shown in Figure 1 C. The step of diffracting at a focal length diffracts the grating 2 2 on the slice 10 - the diffraction grating that sets the range in either of the diffracted light and the diffracted light is 'this winding is a series of selected examples of light peaches Change in group, which describes ~ shape I scale to another or both
第22頁 1251663 --—--- 五、發明說明(20) 皆會有變化。傳Page 22 1251663 ------ V. Inventions (20) There will be changes. pass
而改變, 可能在一 量,舉例 化。繞射 統線2 5, 之利用三 繞射 在準備具 透明及透 的其中一 防染層上 罩和防染 當曝光於 化時,一 料中化學 改變,因 例而言, 做後曝光 層中之組 程來開發 部份被移 定。此開 產生i虫亥J 因而促 已定範 而言 , 光柵2 2 或可為 度空間 結構一 有呼應 明區域 侧,因 ° 一個 層之間 輻射下 潛伏性 性變化 此可用 一個在 烘烤, 元。就 ,此過 除,而 發過程 區域或 統上,劑量 進一個後續 圍内作5 0 n m 可能在一已 可利用如圖 其他任何繞 圖樣的繞射 般而言是在 此繞射結構 的光罩。接 而將此光罩 或以上之透 ,並可選擇 或給予充份 影像便產生 之潛伏性影 來產生如前 防染劑中具 其目的在驅 另一項實例 程可選擇做 此部份的決 亦被引用為 空間’亦或 或焦距是隨著一常數遞增步驟 的分析。因此舉例而言,焦距 到1 0 0 n m的步驟變化。而劑 定範圍内作1 m J到2 m J的遞增變 1 C所示,由間隔3 0所分開之傳 射結構,包括一些如圖3所示 結構。 防染劑原料中被製造,其過程 之理想形狀、大小及組態之不 著一個輻射源將應用於此光罩 的形狀與間隔投射到另一側之 鏡或其他光學系統可以***光 性地***輻射源和光罩之間。 的能量以致在防染劑中興起變 於防染劑中。此代表防染劑原 像,導致了防染層中反射值的 面所提及之繞射特性。就一實 備潛伏性影像之晶片可以用來 動附加化學反應,或散開防染 而言,防染劑可經由一開發過 化學性開發。其中防染劑的一 定是依使用正防染或負防染而 一蝕刻過程,用以在防染層上 選擇在設有這樣的防染層之基And the change may be exemplified in one quantity. Diffraction line 2 5, using three diffractions to prepare a transparent and transparent one of the anti-staining layer cover and anti-staining when exposed, chemical changes in one material, for example, as an after-exposure layer The part of the group to be developed is transferred. This opening produces i worm hai J and thus promotes the norm, the grating 2 2 or the latitude space structure has a side that echoes the side of the region, due to the latent change in radiation between layers, which can be used in baking, yuan . In this case, the process area or system, the dose into a subsequent enclosure for 50 nm may be used in a diffraction pattern as shown in any other diffraction pattern. cover. Then, the mask or the above is transparent, and the latent image generated by the selection or giving of the full image is generated to have the purpose of the former anti-staining agent. The decision is also quoted as space 'or or the focal length is an analysis of the steps with a constant increment. So for example, the step of the focal length to 100 nm changes. The incremental structure of 1 m J to 2 m J is shown in the range of 1 C, and the transmission structure separated by the interval 30 includes some structures as shown in FIG. The anti-dye material is manufactured in a desired shape, size and configuration without a radiation source. The mirror or other optical system that is applied to the shape and spacing of the reticle to the other side can be inserted optically. Insert between the radiation source and the reticle. The energy that rises in the anti-staining agent becomes a change in the anti-staining agent. This represents the original image of the anti-staining agent, resulting in the diffraction characteristics mentioned in the face of the reflection value in the anti-staining layer. In the case of a wafer in which a latent image is prepared, it can be used to add a chemical reaction, or to spread the dye, and the anti-dyeing agent can be developed through chemical development. Among them, the anti-staining agent is etched according to the use of positive or negative anti-staining, and is used to select the anti-dye layer on the anti-dye layer.
第23頁 1251663 五、發明說明(21) 底原料,如其他軟片上產生蝕刻區域或空間。 在本發明所應用之方法與設備中,繞射結構可以被曝 光但不開發,或亦可選擇被開發。同樣地,雖然前面所述 大約地描繪了一個產生繞射結構的傳統方法,但任何方法 皆可被應用,包括使用位向轉移光罩、各種輻射源中任何 一種,包括電子光束幅照及類似輻射源。Page 23 1251663 V. INSTRUCTIONS (21) Bottom materials, such as etched areas or spaces on other films. In the method and apparatus to which the present invention is applied, the diffraction structure may be exposed but not developed, or may alternatively be developed. Similarly, while the foregoing describes approximately a conventional method of creating a diffractive structure, any method can be applied, including the use of a transmissive reticle, any of a variety of sources, including electron beam illumination and the like. Radiation source.
在任何印刷設備中,包括步進器或類似之印刷設備, 焦距是一個非常重要的參數。焦距和焦距深度為劑量或輻 射能量量子之函數,並為焦距或透鏡到目標物之間的距離 之函數。其成像結果在給予之曝光區任何一點中必為良好 的,因而產生一個可界定之可用性焦距深度。然而,劑量 及焦距以外之因素亦會影響焦距和焦距深度,包括散光、 場曲率、鏡頭品質、晶片臺在X和Y轴上的取向,以及類似 因素。典型的生產晶片步進器具有約從0. 1 5至1. 2 3微分之 解析度,以及一個約從0 . 4 0至1. 5 0微分之可用性焦距深 度。In any printing device, including steppers or similar printing equipment, focal length is a very important parameter. The focal length and focal depth are a function of the quantum of the dose or radiation energy and are a function of the focal length or the distance from the lens to the target. The imaging results must be good at any point in the given exposure zone, thus producing a definable usable focal depth. However, factors other than dose and focal length can also affect focal length and focal depth, including astigmatism, field curvature, lens quality, orientation of the wafer stage on the X and Y axes, and the like. A typical production wafer stepper has a resolution of from about 0.15 to 1.23 micrometers, and a usable focal depth of from about 0. 40 to 1.50 micrometers.
為了在印刷設備,如晶片製造過程中之光阻刻蝕曝光 步驟中所使用的步進器中做有效操作,固定劑量下之焦距 中心的決定是非常重要的。劑量之變數使決定此焦距中心 的困難度複數化。用於步進器及其他印刷設備中的鏡頭具 備相當有限之焦距深度,因此極精準度是必須的。對焦下 之鏡頭將產生清晰之印刷光阻刻蝕影像,而失焦則會產生 不起作用的光阻刻蝕特徵。位於正確的焦距中心下亦能大 規模地促進流程之可重複性。一但焦距中心被認知與確In order to operate effectively in a stepper used in a photoresist process, such as a photoresist etch exposure step in a wafer fabrication process, the decision of the focal length center at a fixed dose is very important. The variable of the dose multiplies the difficulty in determining the center of the focal length. Lenses used in steppers and other printing equipment have a very limited focal depth, so extreme precision is a must. The lens under focus will produce a clear printed photoresist etched image, while out of focus will produce inactive photoresist etch features. Being located at the right focal length center also promotes process repeatability on a large scale. Once the focal length center is recognized and confirmed
第24頁 1251663 五、發明說明(22) 定,各種不同之 被應用於決定其 包括光學方法, 感應方法,如應 能夠決定焦距中 常數。在一般的 性的’在印刷設 之實例 進器或 在固定 輻射之 式測量 到在固 是二度 以是三 度空間 。用以 如長方 此不等 用者指 圖樣列 與實驗 一個繞 更複雜 自動對 鏡頭與 如應用 用壓縮 心,純 操作方 備的操 中,本 掃描器 劑量下 重複性 之輻射 定劑量 空間的 度空間 結構的 決定斷 形的模 邊四邊 定之輪 入考慮 數據做 射結構 的模型 方案中 間距為 光線, 而,這 持鏡頭 距中心 繁為每 斷面散 心。首 改變之 繞射結 具,測 距變數 具有線 、柱或 所選擇 性資料 用更複 棱、南 性資料 論產生 求得藉 是利用 射結構 利用一個能夠 量出一系列之繞射 性。繞射 之繞射光 雜之結 再一首選 決定一步 生一系列 含可繞射 做散射模 結構以得 結構可以 柵,或可 構。在三 構的體積 簡單形狀 四邊形。 其他由使 之軟片及 繞射特性 程參數。 出來的。 焦系統或 晶片間的 一個反射 空氣。然 粹只是保 法中,焦 作中最頻 發明應用 之焦距中 隨焦距而 或週期性 源基準工 下每一焦 ,如傳統 的,如孔 情形下, 面之理論 型,或應 形可具圓 廓。理論 。將由理 匹配,以 的斷面便 可融入繞 的任何一 一常數。 和電容方 些系統及 到晶片之 的決定必 六個小時 射模式模 先,由印 特性。這 之繞射特 條及間距 其他更複 的斷面可 庫可以應 雜之形狀 斯或反曲 庫亦可將 並具有已 由理論所 這些流程 之光學屬 種,都能 這些系統 法與壓力 方案並不 距離為一 須是週期 或以下。 型分析以 刷方法產 些特性包 以是此結 用一個成 如不等邊 輪廓,或 位於下方 知參數之 預測之流 參數計算 性,例如Page 24 1251663 V. INSTRUCTIONS (22) It is determined that various differences are applied to determine optical methods, and inductive methods, such as the ability to determine the constant in the focal length. In the general case of the image in the printing device or in the fixed radiation, it is measured at the second degree to be a third degree space. For the sake of the rectangular side, the user refers to the pattern column and the experiment is more complicated. The automatic lens is applied to the lens and the compression core is applied. The operation of the scanner is repeated. The degree of spatial structure determines the shape of the four sides of the broken die. The spacing of the model is considered to be the light in the model. The distance between the lens and the center is the center of each section. The first changed diffraction fixture, the range variable has a line, column or selected data. The more complex edge and the south data theory are used to obtain the diffraction structure. Diffraction of the diffracted light. The first choice is to make a step by step. The diffraction pattern can be diffracted so that the structure can be gated or configurable. The volume of the three structures is a simple shape quadrilateral. Others make the film and the diffraction characteristic parameters. from. A reflected air between the focal system or the wafer. However, it is only in the preservation of the law, in the focus of the most frequently invented application in Jiaozuo, with the focal length or the periodic source reference, each of the focal points, such as the traditional, such as the hole case, the theoretical surface, or should be round Profile. Theory. The cross section will be matched to any constant around the winding. The decision of the system and the chip to the chip must be six hours. This diffractive special strip and spacing can be used in a variety of shapes or recursive libraries. It can also have optical species that have been processed by theory. These system methods and pressure schemes can be used. The distance is not one cycle or less. The type analysis uses the brush method to produce some characteristic packages. This is done by using a contour such as an unequal contour or a predictive flow parameter at the bottom.
第25頁 1251663 五、發明說明(23) 光學η與k值,以 為光學路徑的總 將經由理論 出之斷面,繪製 距。在愈接近焦 步驟間的面積差 下,連續性焦距 距中心。此方法 置到呼應焦距之 心。此拋物曲線 應,決定於光阻 可以有一最小值 及位於下方之軟片厚度,以使焦距度量成 和 ° 性資料 成 以 都在拋物 值」可包 他統計技 距中心。 這些 以被反射 器擷取其 模式測量 制於,使 析工具。這項 及/或單 線切線 括傳統 術可以 技術可 或傳導 輻射。 的工具 用反射 技術亦 層厚度 距中心 距會愈 步驟間 的另一 區域上 可能有 刻钱劑 或最大 為零處 的最大 被應用 庫中之 焦距為 時,從 來愈小 之斷面 個表達 ,其切 「凹向 化學作 值。在 。就如 值亦可 來自呼 最佳匹配理 函數之方程 論性模型 圖以得到 一個焦距步驟到下一 。在理論上最理想之 變數為最小的那一點 方式為,將一個拋物 線為零的那一點便是 上的」或「 用及流程, 凹向下的 因而此抛 任何一個情況下,焦 方法中, 最小值° 面積中計 在此使用的 包括傳統的 應於焦距的 所計算 最佳焦 個焦距 狀況 便是焦 曲線配 焦距中 」的反 物曲線 距中心 「最小 各種其 算出焦 被應用在度量學工具上,此工具具備了可 經一繞射結構之輻射基準源,並由一偵測 換句話說,任何一個可以作繞射基準散射 皆可使用於此技術當中。這些包括但不限 計或橢圓偏光儀之角度解析及/或波長解 可用來監控製造背景中之焦距及/或劑量 之偏移。在監控繞射特性之計算面積中,Page 25 1251663 V. INSTRUCTIONS (23) Optical η and k values, so that the total optical path will be plotted via the theoretical section. The continuous focal length is from the center at the closer the difference between the focal steps. This method is set to echo the focus of the focus. This parabolic curve should be determined by the fact that the photoresist can have a minimum value and the thickness of the film below it so that the focal length is measured and the data is at the parabolic value, which can be included in the center of the statistical distance. These are measured by the reflector and used to measure the tool. This and/or single-line tangential technique can be technically or conductively radiated. The tool uses the reflection technique. The thickness of the layer is further from the center distance. In another area between the steps, there may be a focal length in the application library, or a maximum of zero. It cuts the value of the concave chemistry. The value can also be derived from the equation model of the best matching rational function to get a focal length step to the next. The theoretically optimal variable is the smallest point. The way is that the point where a parabola is zero is the upper or the flow, the concave downwards and thus the throwing of any one of the cases, the focal method, the minimum value of the area used here includes the traditional The best focal length of the focal length that should be calculated from the focal length is the inverse of the focal curve in the focal length of the focal point. "The smallest variety of calculated focal points is applied to the metrology tool. This tool has a diffraction structure. Radiation reference source, and by a detection, in other words, any one that can be used as a diffraction reference scattering can be used in this technology. These include but not limited Or the angular resolution and/or wavelength solution of the ellipsometer can be used to monitor the offset of the focal length and/or dose in the manufacturing background. In the calculated area of the monitoring diffraction characteristics,
第26頁 1251663 五、發明說明(24) 如果計算面積偏離出一個特定範圍,其流程便須針對偏移 作檢測。 在這些方法的使用中,運用各種過濾方法來移除會對 焦距分析有不利影響之外在因素是必要的。其中一種過濾 方法便是利用實驗性繞射特性與理論性繞射特性之配適度 量的優點。配置不良之匹配值將從分析中移除。 本發明中之方法將找到光阻刻蝕劑處理步驟之主要應 用方式,其中最佳焦距之決定為此步驟中最重要的一環。 然而,本發明中之方法可以更深入地應用在處理過程中, 以決定刻姓軟片疊及金屬光柵之「最佳焦距」設定,或與 刻蝕過程相關的「最佳刻蝕」狀態。 傳統的B 〇 s s u n g P 1 ◦ t s法將臨界尺寸繪製成一為焦距-函數的方程圖,以決定最佳焦距。另外亦為人知的方法 有’將其他附加參數,如側壁或厚度,單獨地繪製成一為 焦距函數的方程圖,以決定最佳焦距〈j. A. A 1 1 g a i r,D. C. Benoit, R.R. Hershey, L.C. Litt, B. Braymer, P. P. Herrera, C.A. Mack, J.C. Robinson, U. K.Page 26 1251663 V. INSTRUCTIONS (24) If the calculated area deviates from a specific range, the process must be tested for the offset. In the use of these methods, it is necessary to use various filtering methods to remove factors that would adversely affect the focus analysis. One of the filtering methods is to take advantage of the compatibility between the experimental diffraction characteristics and the theoretical diffraction characteristics. Poorly configured match values will be removed from the analysis. The method of the present invention will find the primary application of the photoresist etchant processing step, with the determination of the optimum focal length being the most important part of the step. However, the method of the present invention can be applied more deeply to the process to determine the "best focus" setting for the surname film stack and the metal grating, or the "best etch" state associated with the etch process. The traditional B 〇 s s u n g P 1 ◦ t s method plots the critical dimension into a focal length-function equation to determine the optimal focal length. Also known is the method of 'adding other additional parameters, such as sidewall or thickness, to an equation of the focal length function to determine the best focal length <j. A. A 1 1 gair, DC Benoit, RR Hershey, LC Litt, B. Braymer, PP Herrera, CA Mack, JC Robinson, UK
Whitney, P. Zalicki, "Implementation of spectroscopic critical dimension (SCD) for gate CD control and stepper characterization, ,f Proc SP IE, Vol· 4344,pp· 462-471,2001〉。然而,這些參數經 常不成一呼應焦距之拋物線。在以下的討論中,本發明中 之方法將提供一個較高等的結果。 圖5表示一根據實驗數據所作之散射模式測量之防染Whitney, P. Zalicki, "Implementation of spectroscopic critical dimension (SCD) for gate CD control and stepper characterization, ,f Proc SP IE, Vol. 4344, pp. 462-471, 2001>. However, these parameters often do not correspond to the parabola of the focal length. In the following discussion, the method of the present invention will provide an even higher result. Figure 5 shows an anti-staining method based on the scattering pattern measurement based on experimental data.
第27頁 1251663 ^----- 底端踭及p 示為^介人寸隨焦距變化的方程圖。其底端臨界尺寸被表 尺^ —隨底端臨界尺寸與焦距趨勢中可見之最大底端臨界 之趨之比率而變化的方程圖。在此Bossung pi〇ts法所呈1 平么勢並不成一拋物線,而是隨焦距升高接著便到達一個 圖6為一以散射模式測量之防染侧壁及防 的方程圖。其侧壁及防染值被表示為參數與隹拙 勢中夕田 7 /认,、忠距趨 取大 > 數的比率。側壁趨勢一般而言相反於底端臨 』尺寸,勢。當側壁趨勢成最高時,底端臨界尺寸趨勢為 取低。最高侧壁值可以高過90度。侧壁減少時,底端臨界 尺寸增加。防染厚度在焦距曲線大約中間的一點上為常 ,。在接近焦距的兩個邊緣上皆可見防染喪失。可見的 是’防染厚度大約成一拋物線,但並不會永遠成一準確之 曲 '、泉尤其在您集的光栅結構中,其防染喪失可在一大片 面積之焦距中減到最低。 圖7為一由本發明中之方法所決定之防染斷面,或在 此為斷面面積,隨焦距變化的方程圖。其中,一個簡單的 不等邊四邊形模型被使用。斷面面積被表示為一斷面面積 與焦距趨勢中最大斷面面積之比率。防染底端臨界尺寸二 側壁、以及厚度,單獨而言並不成一拋物線趨勢,如圖5 和6所不。但當合併在一起以形成一光栅斷面面積時,便 可見一抛物線趨勢’如圖7所示。即使當一個單一的表 數,如臨界尺寸或厚度可被繪成一隨焦距而改變之方程圖 並產生一拋物曲線時,一個在許多情形下更符合_拋物二Page 27 1251663 ^----- The bottom end 踭 and p are shown as equations for the change of the focal length with the focal length. The bottom critical dimension is a graph of the equation as a function of the ratio of the critical dimension of the bottom end to the maximum bottom critical point visible in the focal length trend. In this Bossung pi〇ts method, the 1st flat is not a parabola, but it rises with the focal length and then reaches a figure. Figure 6 is an equation for the anti-staining sidewall and prevention measured by the scattering mode. The side wall and the anti-staining value are expressed as the ratio of the parameter to the Xitian 7 / recognition, and the ratio of the loyalty distance to the larger number. The sidewall trend is generally opposite to the bottom dimension, potential. When the sidewall trend is highest, the bottom critical dimension trend is lower. The highest sidewall value can be higher than 90 degrees. When the sidewall is reduced, the critical dimension of the bottom is increased. The anti-staining thickness is usually at a point in the middle of the focal length curve. Loss of protection is visible on both edges close to the focal length. It can be seen that the thickness of the anti-staining is about a parabola, but it will not be an accurate curve forever. The spring is especially in the grating structure of your collection, and its loss of dyeing can be minimized in the focal length of a large area. Fig. 7 is a graph showing an anti-staining section determined by the method of the present invention, or a cross-sectional area thereof, as a function of focal length. Among them, a simple elliptical quadrilateral model is used. The cross-sectional area is expressed as the ratio of the area of a section to the largest section of the focal length trend. The critical dimension of the bottom end of the anti-dyeing side, the side wall, and the thickness, alone, do not become a parabolic trend, as shown in Figures 5 and 6. However, when they are combined to form a grating cross-sectional area, a parabolic tendency is seen as shown in Fig. 7. Even when a single number of tables, such as critical dimensions or thicknesses, can be plotted as an equation of equation that changes with focal length and produces a parabolic curve, one is more consistent with _parabolic two in many cases.
第28頁 1251663 五、發明說明(26) 線之類似拋物曲線,可以在使用斷面中尋得。此外,斷面 不需是一個面積,因而可以是一個體積或兩個以上不形成 幾何形狀之參數的總和。因此,斷面可以是一個面積,一 個體積或兩個以上參數的總和。就一實例而言,臨界尺寸 被選擇作為其中一項參數。 非常多種理論性模型輪廓可以被利用來決定斷面面 積。圖8敘述一個最基本之理論性光柵結構,一個簡單的 長方形,其中W為測量寬度,如臨界尺寸,而Η為設置在基 底8 4上之繞射結構8 0,8 0 ’,8 (Γ的測量高度。斷面光柵 面積是由以下公式所界定:Page 28 1251663 V. INSTRUCTIONS (26) A parabolic curve similar to the line can be found in the section used. In addition, the section need not be an area and thus may be the sum of one volume or more than two parameters that do not form a geometry. Thus, the section can be an area, a volume or a sum of two or more parameters. For an example, the critical dimension is chosen as one of the parameters. A wide variety of theoretical model profiles can be utilized to determine the section area. Figure 8 illustrates a basic theoretical grating structure, a simple rectangle, where W is the measured width, such as the critical dimension, and Η is the diffraction structure 80,8 0 ',8 (设置) disposed on the substrate 84. The measured height of the section is defined by the following formula:
H · W ross-Sect i on Area 其中H為·光拇高度,而W為光柵寬度。更多詳細的理論性 模型可被利用以促進步進器焦距中心決定的準確性。其中 一個這樣的模型為一不等邊四邊形,加入一個侧壁角度的 尺寸,如圖9所示,並應用繞射結構82,82’ ,82”。 決定 不等邊四邊形光柵之斷面的方程式如下: (2)H · W ross-Sect i on Area where H is the light thumb height and W is the grating width. More detailed theoretical models can be utilized to facilitate the accuracy of the stepper focus center decision. One such model is an unequal quadrilateral, adding a dimension of the sidewall angle, as shown in Figure 9, and applying the diffractive structures 82, 82', 82". Equations determining the section of the equilateral quadrilateral grating As follows: (2)
Cross-Sect i on Area 二 Η · (W-H/tanA) 其中Η為光栅高度,而W為光柵底部之寬度,Α則是不等邊 四邊形之侧壁角度。其他更複雜之形狀亦可被利用。更複 雜之形狀需要更複雜之方程式以斷面面積來表示光栅形 狀。 三度空間結構亦可以類似方法分析。對三度空間結構 而言,其中一項斷面之測量為一斷面體積。舉例而言,一 個簡單的接觸孔模型,假設在X軸及Y軸皆為一完美的圓形Cross-Sect i on Area II Η · (W-H/tanA) where Η is the height of the grating and W is the width of the bottom of the grating, and Α is the side angle of the unequal quadrilateral. Other more complex shapes can also be utilized. More complex shapes require more complex equations to represent the shape of the grating in cross-sectional area. The three-dimensional structure can also be analyzed in a similar way. For a three-dimensional structure, one of the sections is measured as a section volume. For example, a simple contact hole model assumes a perfect circle on both the X and Y axes.
第29頁 1251663 五、發明說明(27) 輪廊,以及 面當作一個 位於底 在焦距上對 根據散射計 將導致這些 能在已決定 驟可以簡單 度斷面,或 與薄軟 斷 進而可 可以是一個 數的總和。 平均值、角 其結果總和 有許多 晶片步進器 面積或體積 存在之外在 線為零的那 方式為,簡 在Z軸上呈一固定為9 0度的侧壁,便可將其斷 圓柱來計算,因而得到一個斷面體積。 下之薄軟片厚度以及原料之光學屬性通常不會 理論性資料庫模型產生實質上的變化。然而, 、組態、以及理論性模型的選擇,焦距的變化 屬性的變化。因而可見的是,理論性資料庫可 之斷面中併入薄軟片厚度及光學常數。這個步 到在光柵斷面面積上加入一等週期之薄軟片厚 著更複雜一點,以原料光學常數η與K衡量光柵 面面積之貢獻。 見的是,非幾何斷面亦可被應用。因此,斷面 參數如臨界尺寸的總和,及一個或以上附加參 其附加參數如,舉例而言,原料參數、測重或 度測量、光學屬性、曲線及其他類似參數。 可以類似方法應用在斷面面積或體積上。 方法可分析斷面焦距度量以決定印刷設備,如 之焦距中心。最簡單的方法為將斷面,如斷面 繪製成一隨焦距而改變的方程圖,且移除任何 因素,並將一拋物曲線配置到所得之數據。切 一點便是焦距中心,如圖7所示。另一個度量 單地在焦距上找尋最大斷面面積及最小斷面面 積〈此決定於焦距中心分別在最大值或最小值上〉。 另一個 步驟到下一 決定焦距中心的方法為,分析斷面自一個焦距 個焦距步驟間之變化率。在理想之理論性案例Page 29 1251663 V. INSTRUCTIONS (27) The veranda, as well as the face as a bottom at the focal length, according to the scatterometer will result in these can be determined in a simple section, or with a thin soft break Is the sum of a number. The average value, the sum of the results, and the number of wafer stepper areas or volumes that exist outside the line are zero. In the Z-axis, a side wall fixed at 90 degrees can be broken. Calculated, thus obtaining a cross-sectional volume. The thickness of the underlying film and the optical properties of the material typically do not materially change the theoretical database model. However, the choice of configuration, and theoretical models, changes in the focal length of the property. It can thus be seen that the theoretical database can incorporate thin film thicknesses and optical constants in the cross section. This step is more complicated by adding a thin film of a uniform period to the cross-sectional area of the grating, and the contribution of the optical area constants η and K to the grating surface area. It can be seen that non-geometric sections can also be applied. Thus, the cross-section parameters such as the sum of the critical dimensions, and one or more additional parameters such as, for example, raw material parameters, weight or degree measurements, optical properties, curves, and the like. A similar method can be applied to the cross-sectional area or volume. The method analyzes the profile focal length metric to determine the printing equipment, such as the focal length center. The easiest way is to plot the section, such as the section, into an equation that changes with the focal length, and remove any factors and configure a parabolic curve to the resulting data. Cut a point is the center of the focal length, as shown in Figure 7. Another measure is to find the maximum cross-sectional area and the minimum cross-sectional area on the focal length (this depends on the maximum or minimum of the focal center respectively). Another step to the next decision to determine the center of focus is to analyze the rate of change of the section from a focal length step. Ideal theoretical case
第30頁 1251663 五、發明說明(28) —__ 中,當焦距接近焦矩中心時, 個焦距步驟間之差異將減少斷面自一個焦距步驟到下一 下一個焦距步驟間的變化=隹直到斷面自一個焦距步驟到 一個焦距步驟到下〜個隹距:t心處達到最小。斷面自 焦距為對軸之方程圖,並可^驟間之變化亦可繪製成一以 為零的那一點便為焦距=:配置於—拋物線上。其切線 除了決定一個步進界、二二# ^ 本發明中之方法所產生:隹$描器之最佳焦距位置外,由 掃描器光網一起應用、、焦距曲線可以與特別之步進哭/ 此方法中,-系列之乂决疋階段傾斜和場不-致性。在 應用於一區域,如晶f二結,,二繞射光栅以同樣的焦距 一系列之連續性相同隹 就貝例而& ,繞射特性是從 及60所取得的,如圖4:距設定之繞射光柵4〇,45,50,55 是由理論性資料庫及不。理論性輪廓模型與繞射特性 面的決定則是隨為务面,如一斷面面積而決定。此斷 型而改變。其結果斷一個繞射光柵而選擇之繞射特性及模 而變化之方程圖,面,如一斷面面積被繪製成一隨位置 一致性圖。 產生一個三度空間之階段傾斜與場不 因此已經清楚 面差異和數據(此場是,利用針對場中繞射結構位置之斷 製成一隨場中位置為傳統之晶片臺),可將焦距中心繪 頭系統及散光中之光:楚:之=墓此方程圖可能顯示鏡 义光仃差,或其他導致跨場焦距中心 致的缺陷。同樣地,揚 …、 ~ 一 ^ 跨X及υ軸之场内傾斜度亦可被繪萝点 圖,因而顯不一個隨場内位置變化之焦距中心階段傾斜气Page 30 1251663 V. Inventive Note (28) —__ When the focal length is close to the center of the focal moment, the difference between the steps of the focal length will reduce the change from the step of one focal length to the step of the next focal length of the section. Face from a focal length step to a focal length step to the next ~ 隹 distance: t heart reaches the minimum. The section self-focus distance is the equation of the axis, and the change between the steps can also be plotted as a point of zero. The focal length =: is placed on the parabola. The tangential line is determined by the method of the present invention, which is generated by the method of the present invention: the best focal length position of the 描 描 描 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , / In this method, the - series is determined by the stage tilt and the field is not. In a region, such as a crystal f-two junction, the two diffraction gratings have the same series of continuity with the same focal length. The diffraction characteristics are obtained from 60 and 60, as shown in Fig. 4: The distance from the set diffraction grating 4〇, 45, 50, 55 is from the theoretical database and not. The theoretical contour model and the diffraction characteristics are determined by the face, such as the area of a section. This type of change changes. As a result, a diffractive grating is selected and the diffraction characteristics and the equation of the mode are selected. The surface, such as a cross-sectional area, is plotted as a positional consistency map. The stage tilt and field that produce a three-dimensional space are therefore not clearly different from the surface and the data (this field is, using the position of the diffraction structure in the field to make a conventional wafer stage with the position in the field), the focal length can be The center of the drawing system and the light in the astigmatism: Chu: = The tomb This equation may show the difference between the mirror and the light, or other defects that cause the center of the focal length of the cross. Similarly, the inclination of the field in the range of the ... and ~ ^ cross X and the υ axis can also be plotted, so that there is no focal point in the center of the field.
第31頁 1251663 五、發明說明(29) 應。 本發明中之方法與儀器可用來做品質控制測試,包括 由其他方法決定之焦距中心的分析。此測試可借助於以上 敘述之角度解析散射計,包括相關之電腦系統,或借助於 其他能夠作所敘述之測量的適合儀器。 藉由應用一個角度解析散射計,將繞射特性分割為所在角 度位置之相異繞射級,而此角度位置是由以下光柵方程式 所指定: sinei + sinen 二 ηλ/d (3) 其中,θι為負數之入射角,而θη為η次方繞射級之角度 位置,;I則為入射角的波長,d為繞射結構之間隔期或總 和。因而可見的是,對於零次方或反射繞射級,其入射角 度等於反射繞射級之角度位置。然而除了反射外,其他繞 射常態亦可被應用,以及如以上方法所決定之適當的角度 位置。類似的關係掌管著其他產生繞射特性的方法,因此 任何一個產生繞射特性的方法,不論是反射繞射級或其他 更高繞射級皆可被應用。舉例而言,在一個波長解析儀器 中,角度θί可以是一常數,而波長;I為一變數,其方程 式則在一既定η中計算 (9 η。 本發明中之方法與儀器亦可被運用來決定焦距中心, 其焦距中心可以用任何適當方法作調整,包括使用以電腦 為基礎之控制系統,以及本發明中用以決定是否一個可接 受或最佳焦距已被斷定的方法。其調整方式可以利用劑量Page 31 1251663 V. Description of invention (29) should. The methods and apparatus of the present invention can be used for quality control testing, including analysis of focal length centers determined by other methods. This test can be used to resolve the scatterometer from the perspective described above, including related computer systems, or by other suitable instruments capable of making the described measurements. By applying an angular resolution scatterometer, the diffraction characteristics are divided into distinct diffraction orders at the angular position, which is specified by the following grating equation: sinei + sinen ηλ/d (3) where θι It is the incident angle of a negative number, and θη is the angular position of the η power diffraction order; I is the wavelength of the incident angle, and d is the interval or sum of the diffraction structures. It can thus be seen that for a zeroth power or a reflected diffraction stage, the angle of incidence is equal to the angular position of the reflection diffraction stage. However, in addition to reflection, other diffraction normals can be applied, as well as the appropriate angular position as determined by the above method. Similar relationships govern other methods of generating diffraction characteristics, so any method that produces diffraction characteristics, whether reflective diffraction orders or other higher diffraction orders, can be applied. For example, in a wavelength analysis instrument, the angle θί can be a constant, and the wavelength; I is a variable, and the equation is calculated in a predetermined η (9 η. The method and apparatus of the present invention can also be applied. To determine the center of focus, the center of focus can be adjusted by any suitable method, including the use of a computer-based control system, and the method of the present invention for determining whether an acceptable or optimal focal length has been determined. Dosage
第32頁 1251663 五、發明說明(30) 變數或其他在此領域中所知之方法來完成。Page 32 1251663 V. INSTRUCTIONS (30) Variables or other methods known in the art are to be accomplished.
本發明可利用一個自動對焦控制系統,進一步地為焦 距中心做自動的或自動化的判定,其中由斷面分析所產生 的資料,如劑量變數被運用在控制系統中以決定焦距。雖 然本發明已藉由某些首選之實例為參考做詳細的說明,然 而其他實例亦可達到同樣的效果。對於那些對本領域非常 熟練者,有關本發明之變化與修正將變得明顯,而附加之 申請專利範圍旨在包含說明這些變化與修正。以上所引證 之所有參考、應用、專利、以及出版品之所有内容皆在此 作參考併入。The present invention can utilize an autofocus control system to further automate or automate the determination of the focal length center, wherein the data generated by the cross-sectional analysis, such as dose variables, is utilized in the control system to determine the focal length. Although the present invention has been described in detail with reference to certain preferred examples, other examples may achieve the same effect. Variations and modifications of the present invention will become apparent to those skilled in the art, and the scope of the appended claims is intended to cover such changes and modifications. All references, applications, patents, and publications cited above are hereby incorporated by reference.
第33頁 1251663 圖式簡單說明 在此說明書中所伴隨及融入之圖示, 白利用圖解方 說明以解 說明本發明中一個或以上之實例,並且伴刊用叫唧万式 釋本發明之大綱原則。這些圖式的目的〇'文字 釋本發明中一個或以上之首選實例,而非、疋為了說明解 的元素。 為限制本發明 在圖式中: 圖1 A至1 C為一具備鑄模之晶片的分解概要 包括一個繞射光栅。其中圖丨八描述晶片圖’其鑄模 包括設定在圖iA中之晶片上的繞射光栅之鑄模。二: 描述圖1B中之鑄模繞射光柵設定上之單_繞射光拇。 圖2為求得反射零次方繞射特性之各種模式的概要示意 圖。 圖3描述一個三度空間的繞射結構。 圖4描述一系列之繞射光柵。 圖5為一描述隨焦距而成走向之樣本防染劑底端臨界尺寸 之圖式。 圖6為一描述隨焦距而成走向之樣本防染劑侧壁及防染劑 厚度之圖式。 圖7為一描述隨焦距而成走向之樣本防染劑斷面區域之圖 式。 圖8描述一個長方形繞射結構之斷面。 圖9則描述/個非長方形繞射結構之斷面。 元件符號說曰月 晶片 轉模 15Page 33 1251663 BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in the specification, are intended to illustrate one or more examples of the invention, and in principle. The purpose of these drawings is to describe one or more preferred embodiments of the invention, and not to illustrate elements of the solution. In order to limit the invention, in the drawings: Fig. 1 A to 1 C is an exploded view of a wafer having a mold comprising a diffraction grating. The figure VIII depicts the wafer pattern 'the mold of which includes the mold of the diffraction grating set on the wafer in Fig. iA. Two: Describe the single-diffractive optical thumb of the mold diffraction grating set in Fig. 1B. Fig. 2 is a schematic diagram showing various modes for obtaining the diffraction characteristics of the reflection zeroth power. Figure 3 depicts a three-dimensional diffraction structure. Figure 4 depicts a series of diffraction gratings. Figure 5 is a diagram depicting the critical dimension of the bottom end of a sample anti-staining agent as a function of focal length. Figure 6 is a diagram depicting the sidewalls of the sample anti-dye and the thickness of the anti-staining agent as a function of the focal length. Figure 7 is a diagram depicting the cross-sectional area of a sample anti-dye agent that follows the focal length. Figure 8 depicts a cross section of a rectangular diffractive structure. Figure 9 depicts a section of a non-rectangular diffraction structure. The symbol of the component says that the moon is transferred to the die.
第34頁 1251663 圖式簡單說明Page 34 1251663 Schematic description
繞射光柵群 20 繞射光柵 22 平行線 25 傳統線 25 間隔 30 繞射光撕 40. 45. 50.55. 60 繞射結構 8 0 · 8 0 \ 8 0,, 繞射結構 8 2 · 8 2,. 8 2π 基底 84 第35頁Diffraction grating group 20 diffraction grating 22 parallel line 25 conventional line 25 interval 30 diffractive light tear 40. 45. 50.55. 60 diffraction structure 8 0 · 8 0 \ 8 0,, diffraction structure 8 2 · 8 2,. 8 2π substrate 84第35页
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