TWI250820B - Method for making a field emission display - Google Patents

Abstract

The present invention relates to a method for making a field emission display. A preferred embodiment of the invention comprises: providing a insulating plate having two opposite flat surfaces; coating a metal film on the two flat surfaces respectively; forming a set of striped gate electrodes on one of the metal film by a lithography process; etching portions of the metal films and the insulating plate to form an array of through-holes at corresponding positions on the striped gate electrodes and the metal film on opposite surface of the insulating plate, thereby obtaining a integrated electrodes module; aligning and packing the integrated electrodes module with a cathode electrode module and a phosphor plate to construct the filed emission display.

Description

1250820 五、發明說明（1) 【發明所屬之技術領域】 稽本I: ” &冑场發射平面顯示器之製備，尤其涉及 四極型場發射平面顯示器之 及 【先前技術】 衣備万法 (LCD)?,:不器係繼陰極射線管(CRT)顯示器及液晶 二二不二之後’最具發展潛力之下-代新興技術。相 ! ，場發射顯示器具有顯示效果好、視角 發射顯示器以，尤其係基於奈米碳管之場 來越來越受到重; "發射顯示器（cnt-圖，近年 奈米碳管係一種新型碳姑 ^ , 能，以及幾乎接近理論尖端；面：極優異之導電性 管係已知最好之；ί:材以奈米碳 約2伏/微米），可傳於 /、有極低之開啟電場（大 穩定，因而非$、胃^ :二之電流密度，並且發射電流極 碳管生長= =發= 隨著奈米 已經取得一系列重要進展。不未反& 射顯示器之研究 身又而吕，場發射顯示器之社一 極型。所謂二極型即包括右、= 刀為二極型及三 種結構由於需要;°陰極之場發射結構，這 以控制，驅句性以及電子發射難 :實際應用。三極型結構則；在二器 有柵極來控制電子發射，可以實現在較㈣下；： 1250820 五、發明說明（2) 出電子，而且電子發射容易通 為能達到更好之顯示效果 之功耗以及降低驅動電壓，可 個電勢控制極或聚焦電極，形 結構。這種結構有利於降低柵 電子束聚焦以實現較高解析度 通常製備這種四極型場發 分別做好以下三個部分：第一 二部分係栅極及其與陰極之間 電勢控制極（即聚焦電極）及其 然後，將這三部分製備好之結 要進行兩次對準，對於這種具 孔結構而言，要實現完全對準 整個裝置性能大受影響，甚至 過程中’需加工出兩片具有精 高，難度較大。 過柵極來 ，進一步 以在三極 成所謂四 極開啟電 之顯示效 射顯示器 部分係含 之第一絕 與柵極之 構對準、 有微米級 非常困難 不能使用 細結構之 精確控制。 降低場發射 型之基礎上 極型場發射 壓或者更好 果。 之工藝係， 發射體之陰 緣層，第三 間之第二絕 組裝。這種 甚至奈米級 ，稍有誤差 。再者，上 薄片，其成 顯示器 增加一 顯示器 之控制 首先，極，第 部分係 緣層； 方法需 尺寸網 將造成 述製造 本較 請參見第十三圖，三星SDI公司之研究人員Chun-Gyoo 1^'發明、亚^於2〇〇〇年3月23日申請、2〇〇2年4月3〇日公告 ，美國專利第6, 380, 671號揭露一種奈米碳管場發射顯示 器結構’其包括螢光屏51及形成於其表面之陽極5〇 ;陰極 基底41及形成於其上之條狀陰極42，電子發射材料43按像 素圖形排列形成於所述陰極42上；在陰極42與螢光屏5丨之 間還設有網板46 ’且該網板46上下表面分別形成有條狀電 極45及47’所述條狀電極45及47互相垂直，另外，該網板1250820 V. INSTRUCTIONS (1) [Technical field of invention] Document I: ” & preparation of field emission flat panel display, especially related to quadrupole field emission flat panel display [Prior Art] Clothing preparation method (LCD) )?:: After the cathode ray tube (CRT) display and LCD, the 'most promising potential-generation emerging technology. Phase field display has good display effect, viewing angle display, Especially based on the field of carbon nanotubes, it is getting more and more heavy; "emission display (cnt-picture, a new type of carbon tube in recent years, can, and almost close to the theoretical tip; surface: extremely excellent Conductive tube system is known to be the best; ί: material with nano carbon of about 2 volts / micron), can be transmitted to /, has a very low opening electric field (large stability, and therefore non-$, stomach ^: two current density And the emission current carbon tube growth = = hair = With the nano has made a series of important progress. Not without the anti-amp; the display of the display of the body and the Lu, the field emission display of the company's one-pole type. That includes the right, = knife is a two-pole type Three structures are required; ° the field emission structure of the cathode, which is difficult to control, singularity and electron emission: practical application. The three-pole structure; in the second device has a gate to control the electron emission, which can be realized under (4) ;: 1250820 V. Description of the invention (2) Electron emission, and the electron emission is easily passed to achieve a better display power consumption and lower the driving voltage, and a potential control electrode or a focusing electrode, a structure. In order to reduce the focus of the electron beam to achieve higher resolution, the quadrupole field emission is usually prepared separately for the following three parts: the first two parts of the gate and the potential control electrode (ie, the focusing electrode) between the cathode and the cathode; Then, the three parts of the prepared knot are to be aligned twice. For this kind of perforated structure, the performance of the entire device is greatly affected, and even the process needs to process two pieces with fine High and difficult. Over the gate, further aligning with the first gate and the gate of the display portion of the display that is so-called four-pole turn-on in the three-pole It is very difficult to use the micron level and can not use the precise control of the fine structure. Reduce the field emission type or the better on the basis of the field emission type. The process system, the cathode layer of the emitter, and the second assembly of the third. This kind of nanometer level, there is a slight error. Moreover, the upper sheet, which is added to the display, adds a control of the display first, the pole, the first part of the layer of the edge layer; the method requires the size of the net to be the manufacturing cost, please refer to the thirteenth Figure, Samsung SDI company's researcher Chun-Gyoo 1 ^ 'invention, Ya ^ application on March 23, 2, 2, 2, April 3, 3, 2, 2, 380, 671, US Patent No. 6, 380, 671 No. 1 discloses a carbon nanotube field emission display structure comprising a phosphor screen 51 and an anode 5 formed on a surface thereof; a cathode substrate 41 and a strip cathode 42 formed thereon, and the electron emission material 43 is arranged in a pixel pattern Formed on the cathode 42; a mesh plate 46' is further disposed between the cathode 42 and the phosphor screen 5?, and the strip electrodes 45 and 47' are respectively formed on the upper and lower surfaces of the mesh plate 46. 47 are perpendicular to each other, in addition, the stencil

第6頁 1250820 五、發明說明（3) 46還開設有許多對應於像素圖形位置之通孔^ 子發射材料43於電場作用下發 ★、乂樣，電 ;光:：:：;4可生偏轉4擊螢光屏51之 狀電極45及47之作用，ί以2述結構中，通過中間之條 解析度之顯示U控制電子束之偏轉，實現較高 另外’該公司於2〇〇3年9月9日八止夕呈阳击 6，Π 7,798揭露了一種相猶^月9日'告之美國專利第 惟，#相類似之場發射顯示器結構。 示器之製備方法。，文獻均未詳細描述這種類型之場發射顯 【内容】 為解決習知技術之四極型場發射顯示哭製 明之目的在於提供一；=對準誤差等技術問題，本發 少對準操作，避免產示法，可以減 高生產良率。 早&差，有效提咼製程精度及提 為實現上述發明目的，I# 之製造方法，1包括τμ+本1明提供一種場發射顯示器 板，其具有相對驟-’提供-絕緣基 之兩平整表面分別形成4::驟：驟在所：絕緣基板 金屬膜上利用先列方味^上屬膜，步驟二，在所述一層 形栅極及絕緣基板另==極；步驟四，在所述條 去除部分金屬層及絕緣美拓、]屬膜相互對應之位置蝕刻 及聚焦電極一體之t柽t &》成通孔，從而得到條形柵極 極體之電極挺組；步驟五，將上述電極模組、Page 6 1250820 V. Inventive Description (3) 46 is also provided with a plurality of through-holes emitting material 43 corresponding to the position of the pixel pattern under the action of an electric field, ★, ,, electricity; light::::; Deflect 4 strikes the action of the electrodes 45 and 47 of the fluorescent screen 51, and in the structure of 2, the deflection of the electron beam is controlled by the display of the middle strip resolution, achieving a higher level. The company is at 2〇〇3 On the eve of September 9th, the squadron was hit by a smashing of 6, and 7,798 revealed a kind of field-emitting display structure similar to the US patent No. The preparation method of the display. The literature does not describe this type of field emission display in detail. [Contents] In order to solve the four-pole field emission display of the prior art, the purpose of crying is to provide a technical problem such as alignment error, and the present invention has less alignment operation. Avoid production methods and reduce production yield. Early & poor, effective to improve the process accuracy and to achieve the above object of the invention, I# manufacturing method, 1 includes τμ + this 1 provides a field emission display panel, which has two opposite-providing-insulating substrates The flat surface is formed by 4:: a step: on the insulating substrate metal film, using the first-order square film, the second step, in the layer-shaped gate and the insulating substrate, another == pole; step four, in The strip removes a portion of the metal layer and the insulating Mei Tuo, the film corresponding to the position of the etching and the focusing electrode is integrated into the through hole, thereby obtaining the electrode set of the strip gate body; step 5, The above electrode module,

1250820 五、發明說明（4) 場 發 射 陰 極 以 及 螢 光 屏 經 過 哭 〇 優 選 地 所 述 絕 緣 基 板 片 材 5 其 厚 度 為 數 十 微 米 至 優 選 地 金 屬 膜 係 採 用 鍍 Λ 電 鍍 或 印 刷 方 法 實 現 優 選 地 條 形 柵 極 係 採 光 X 顯 影 以 及 刻 步 驟 形 成 優 選 地 形 成 通 孔 分 兩 面 對 應 之 凹 槽 J 採 用 喷 沙 法 通 孔 〇 與 現 有 技術 相 較 5 本發 之 方 法 可 以 將 栅 極 及 聚 焦 電 造 栅 極 薄 片 及 聚 焦 電 極 薄 片 化 製 作 工 藝 降 低 生 產 難 度 外 上 述 方 法 使 用 之 各 分 步 製 程 中 常 用 之 工 藝 所 以 ， 明 降 低 設 備 之 成 本 〇 [ 實 施 方 式 ] 下 面 結 合 說 明 書 圖 式 及 式 作 詳 細 描 述 〇 本 發 明 製 造 場 發 射 顯 示 步 驟 提 供 ，— 絕 緣 薄 (或電勢控制極）之基底及間 對準、封裝形成場發射顯示 包括玻璃、陶瓷製成之板材或 數百微米範圍； 熱蒸鍍、電子束蒸鍍、化學 用具有條形圖案之光罩經曝 步：採用雙面曝光技術形成兩 ' Μ刻或雷射打孔之方法形成 明方法具有如下優點：本發明 極一體形成，從而無需分別製 ’避免進行多次對準，從而簡 而且可以提高成品良率；另 驟均係半導體製程或電子領域 可以採用現有之設備實現本發 具體實施例對本發明之實施方 器之方法包括以下步驟： 板，其可用作柵極與聚焦電極 隔層；1250820 V. INSTRUCTION DESCRIPTION (4) The field emission cathode and the phosphor screen are cried, preferably the insulating substrate sheet 5 has a thickness of several tens of micrometers, preferably the metal film is preferably plated by a rhodium plating or printing method. Shape gate lighting X development and engraving step formation preferably forming a through hole corresponding to the two sides of the groove J using a sandblasting method through hole 〇 compared with the prior art 5 method of the gate and focus electrical grid The thin film and the focusing electrode thinning process reduce the production difficulty, and the process commonly used in each step-by-step process used in the above method, so that the cost of the device is reduced. [Embodiment] The following is a detailed description of the drawings and the drawings. The field emission display step provides, - a thin substrate (or potential control electrode) and Alignment, encapsulation, field emission display including glass, ceramic plate or hundreds of micrometer range; thermal evaporation, electron beam evaporation, chemical strip mask with strip pattern after exposure: double exposure technology The method of forming two 'etching or laser perforating methods has the following advantages: the invention is formed in one piece, so that it is not necessary to separately make 'avoid multiple alignments, so that the yield can be improved and the yield is good; The present invention can be implemented in a semiconductor process or an electronic field using existing equipment. The method of the present invention includes the following steps: a board that can be used as a gate and a focusing electrode spacer;

第8頁 1250820 五、發明說明（5) 在所述絕緣薄板之兩相反表面分別形成一層 步驟， 金屬膜； 步驟二，在所述兩表面之一形成之 方法形成條形柵極； 〃屬膜上利用光刻 步驟四，在所述條形柵極及絕緣薄板一 膜相互對應之位置蝕刻去除部分金屬:面之金屬 上下凹槽； ㈢$成相互對應之 步驟五，穿透所述對應之上下凹槽之 成通孔’得到條形栅極與聚焦電極—體之電極=溥板形 步驟六，將上述電極模組、場發射陰且以万 屏經過對準^封裝形成場發射顯示器。 、、、且以及螢先 “首先請參見第一圖，係本發明實施例步驟 緣薄板ίο，其可由玻璃、陶兜等電子工藝中 ^ 材料製成薄之板材或片材。絕緣薄板丨〇之兩相反表=好 要求平整，其厚度取為條形柵極與聚焦電極之^ 離即可，一，為數十微米至數百微米範圍内。 預疋 請參第二圖，本發明實施例步驟二：在絕緣薄板10 之兩相反表面上分別形成上一層金屬膜12及13。 考量’所述J屬㈣及13 —般㈣導電性良好且成本J低 之銅金屬，s然，其他導電性良好之金屬也可適用。所述 金屬膜1 2及1 3之形成方法可以採用熱蒸鍍、電子 化學鍍、電鑛以及印刷等方&，其厚度較薄，_般為^米 量級即可。 請參見第三圖至第六圖，本發明實施例步驟三：在所 1250820 表面之一形成之金屬膜 步驟可通過下列分步驟 三圖所示，在金屬膜13 阻層1 5可為正光阻，也 阻為例。 四圖至第六圖所示，採 之光罩17應用於該光阻 製程，在對應於光罩1 7 然，如果係採用負光阻 條形拇極1 4。 所述條形栅極1 4及絕緣 應之位置敍刻去除部分 ，本步驟可通過以下雙 所示’在條形柵極1 4之 覆蓋之部分表面以及金 。如前述，光阻層丨9可 以正光阻為例進行說明 八圖所示，在上述兩光 多個透明圓孔之光罩20 金屬膜1 2及條形柵極1 4 ’當然，透明圓孔對應 成對應之上下凹槽（圖 为別向上、向下延伸到 該絕緣薄板1〇。從而， 五、發明說明（6) 述絕緣薄板10兩 成條形栅極。本 首先，如第 阻層1 5。所述光 施例中僅以正光 然後，如第 區及條形透明區 光、顯影及餘刻 條形栅極1 4。當 條形透明區形成 步驟四，在 金屬膜1 2相互對 對應之上下凹槽 首先，如第七圖 未被條形栅極1 4 轉塗覆光阻層1 9 阻，本實施例僅 然後，如第 應用同一個具有 影、钱刻，去除 圓孔之部分金屬 分也被洗去，$ 槽係從光阻層1 9 面，並未餘刻到 上利用光刻方法形 實現： 表面旋轉塗佈一光 可為負光阻，本實 用一具有條形遮蔽 層1 5，並進行曝 之條形遮蔽區形成 ’則係對應光罩1 7 薄板10另一表面之 金屬層，形成相互 面曝光技術實現： 表面、絕緣薄板1 〇 屬膜12之表面上旋 以？正光阻或負光 〇 阻層1 9之表面分別 進行曝光，然後顯 對應於光罩2 0透明 之光阻層1 9相應部 未標示）。所述凹 絕緣薄板1 0之表 金屬膜12形成凹槽Page 8 1250820 V. Description of the invention (5) Forming a layer of a metal film on each of the opposite surfaces of the insulating sheet; Step 2, forming a strip-shaped grid on one of the two surfaces; Using the photolithography step 4, etching and removing part of the metal: the upper and lower metal grooves of the surface at a position corresponding to the strip-shaped gate and the insulating thin-film; (3) Step 5 corresponding to each other, penetrating the corresponding The through holes of the upper and lower grooves are obtained as strip electrodes and focusing electrodes - the electrodes of the body = the shape of the slabs. Step 6 is performed. The electrode modules and the field emitters are erected and packaged in a 10,000 screen to form a field emission display. The first, the first embodiment of the present invention is a step edge sheet ίο, which can be made into a thin sheet or sheet by an electronic process such as glass or ceramic pocket. The insulating sheet 丨〇 The opposite table = good requirements flatness, the thickness of which is taken as the strip gate and the focus electrode can be separated, one, in the range of tens of microns to hundreds of micrometers. Please refer to the second figure, the implementation of the present invention Example 2: Forming the upper metal film 12 and 13 on the opposite surfaces of the insulating sheet 10 respectively. Considering the J (four) and 13 (four) copper metal with good conductivity and low cost J, sir, other A metal having good conductivity can also be used. The method for forming the metal film 12 and 13 can be a method such as thermal evaporation, electron electroless plating, electric ore plating, and printing, and the thickness thereof is thin, and the thickness is _ Please refer to the third to sixth figures. Step 3 of the embodiment of the present invention: the step of forming a metal film on one of the surfaces of 1250820 can be performed in the metal film 13 by the following three steps. 5 can be positive photoresist, but also for example. Four to six As shown, the reticle 17 is applied to the photoresist process, corresponding to the reticle 17. If a negative photoresist strip-shaped thumb pole is used, the strip gate 14 and the position of the insulation should be To remove the removed portion, this step can be performed by the following double-showing the surface of the portion covered by the strip gate 14 and the gold. As described above, the photoresist layer 9 can be positively resisted as an example. The photomask 20 and the strip gate 1 4 ' of the two transparent transparent holes are of course, the transparent circular holes corresponding to the upper and lower grooves (the figure is not upwards and downwards to the insulating sheet 1 〇. Thus, the invention description (6) describes the insulating thin plate 10 as two strip-shaped grids. First, as the resistive layer 15. In the light example, only the positive light is followed, such as the first region and the strip-shaped transparent region light. , developing and engraving strip gates 14. When the strip-shaped transparent regions are formed in step four, the recesses are formed on the metal film 12 in correspondence with each other. First, as shown in the seventh figure, the strip gates are not coated. The photoresist layer 19 is blocked, and this embodiment is only then, as the first application has the same shadow, money, and removal Part of the metal part of the round hole is also washed away, and the groove is formed from the surface of the photoresist layer, and is not realized by the photolithography method: the surface is coated with a light and can be a negative photoresist. Having a strip-shaped shielding layer 15 and exposing the strip-shaped shielding area to form a metal layer corresponding to the other surface of the reticle 1 7 thin plate 10, forming a mutual surface exposure technique: surface, insulating sheet 1 〇 膜 film 12 The surface of the surface of the photoresist or the negative photoresist layer is respectively exposed to light, and then corresponding to the photomask 20 transparent portion of the photomask 20 is not labeled. The concave insulating sheet 10 The surface metal film 12 forms a groove

第10頁 1250820Page 10 1250820

1 0 ’從而形成通孔2 2，得 之電極模組；如第九圖、 可以通過以下方法實現： 穿透所述對應之上下凹槽之間之除絕緣薄板 ’得到條形柵極1 4與聚焦電極1 6 —體 國、苐十圖及第十一圖所示，本步驟 首先通過喷沙法（Sand blasting)、钱刻或雷射打孔 之方法將上下凹槽之間之絕緣薄板穿透，形成連通之通孔 2 2 〇 然後，洗去剩餘之光阻層19，露出聚焦電極16及條形 柵極14，從而得到聚焦電極16及條形柵極14 一體之電極模 組（圖未標示）。 供 一步驟六’將上述電極模組、場發射陰極模組以及螢 屏經過對準、封裝形成場發射顯示器，其中場發射陰極模 組包括背基板3〇、陰極32及電子發射體33，另外，場發射 陰極模組與電極模組之間有絕緣側壁38以及支撐柱34間 隔；螢光屏則包括前基板31，陽極35及螢光層37，而且， 螢光屏與電極模組之間有絕緣側壁39間隔。 上述場發射陰極可以採用奈米碳管作為電子發射體， 也可採用其他材料，例如石夕、石墨、金剛石或金屬尖端 等。 可以理解’上述凹槽及通孔22也可以做成方形， 將光罩20之透明部分做成方形即可。 而 本發明方法之優點係： 百先’由於場發射陰極、電極模組及螢光屏係分別製1 0 ' thereby forming a through hole 2 2, resulting in an electrode module; as shown in the ninth figure, can be achieved by: penetrating the insulating sheet between the corresponding upper and lower grooves to obtain a strip gate 1 4 As shown in the figure of the focus electrode, the figure 10 and the eleventh figure, this step firstly uses an insulating slab between the upper and lower grooves by sand blasting, money engraving or laser drilling. Penetrating, forming a through hole 2 2 〇, then washing away the remaining photoresist layer 19, exposing the focusing electrode 16 and the strip gate 14, thereby obtaining an integrated electrode module of the focusing electrode 16 and the strip gate 14 ( The figure is not marked). For a step 6', the electrode module, the field emission cathode module and the screen are aligned and packaged to form a field emission display, wherein the field emission cathode module comprises a back substrate 3, a cathode 32 and an electron emitter 33, and The field emission cathode module and the electrode module are separated by an insulating sidewall 38 and a support pillar 34. The phosphor screen includes a front substrate 31, an anode 35 and a phosphor layer 37, and between the phosphor screen and the electrode module. There are insulating sidewalls 39 spaced apart. The field emission cathode may be a carbon nanotube as an electron emitter, or other materials such as a stone, graphite, diamond or metal tip. It can be understood that the above-mentioned grooves and through holes 22 can also be formed in a square shape, and the transparent portion of the photomask 20 can be formed into a square shape. The advantages of the method of the present invention are: Bai Xian' due to field emission cathode, electrode module and fluorescent screen system

第11頁 1250820 五、發明說明（8) 作’其間之絕緣側壁 術陰極與栅極之順序 成’而且避免現有技 體之情況；其次，可 成在絕緣薄板1 〇兩表 焦電極薄片；由於一 從而簡化了製作工藝 良率；另外，上述步 以及雙面曝光技術均 以可以採用現有之設 〇 综上所述’本發 提出專利申請。惟， 例’自不能以此限制 技藝之人士援依本發 應涵蓋於以下申請專 38 及39 製備， 術中製 以將條 面，從 體形成 ’降低 驟包括 係成熟 備，jfe： 係封裝時 所以有利 備栅極時 形柵極1 4 而無需分 ’所以可 生產難度 光阻塗佈 、半導體 需採用專 形成， 於電子 常發生 及聚焦 別製造 避免進 ，而且 、曝光 製程常 門設備 不同于 發射體 污染電 電極16 拇極薄 行多次 可以提 、顯影 用之技 ，降低 現有技 33之形 子發射 一體形 片及聚 對準， 局成品 、敍刻 術，所 設備成 明確已符合發明專利之要件，遂依法 以上所述者僅為本發明之較佳實施 本案之申請專利範圍。舉凡熟悉本案 明之精神所作之等效修飾或變化，皆 利範圍内。Page 11 1250820 V. Inventive Note (8) As the 'insulating sidewall between the cathode and the gate sequence' and avoid the situation of the prior art; secondly, can be formed on the insulating sheet 1 〇 two surface coke electrode sheets; In one case, the manufacturing process yield is simplified; in addition, the above steps and the double-sided exposure technique are all patented by the present invention. However, the example of 'self-restricted skills of the person to support this hair should be covered in the following application for special 38 and 39 preparation, the intraoperative system to form the strip, from the body formation 'reduction step including the mature preparation, jfe: when packaging Therefore, it is advantageous to prepare the gate-shaped gate electrode 1 4 without the need to divide it. Therefore, it is possible to produce a difficult photoresist coating, and the semiconductor needs to be formed separately, and the electrons often occur and the focus is not manufactured, and the exposure process is different from the conventional gate device. The emitter contaminates the electric electrode 16 and the thumb is thin and can be used for lifting and developing multiple times. It reduces the shape of the existing sub-emission and the alignment, and the finished product and the etched technique are clearly in accordance with the invention. The requirements of the patent, the above mentioned in the above is only the scope of the patent application of the preferred embodiment of the present invention. Equivalent modifications or changes made in the spirit of this case are within the scope of the application.

1250820 圖式簡單說明 第一圖係本發明場發射顯示器製造方法實施例中絕緣 基板之立體示意圖。 第二圖係於第一圖之絕緣基板兩表面鍍上金屬層之示 意圖。 第三圖係於第二圖之其中一金屬層上形成光阻層之示 意圖。 第四圖至第六圖係採用條形光罩板進行曝光、顯影及 蝕刻用以製作條形柵極之示意圖。1250820 BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a perspective view of an insulating substrate in an embodiment of a method of manufacturing a field emission display of the present invention. The second figure is intended to be plated with metal layers on both surfaces of the insulating substrate of the first figure. The third figure is an illustration of forming a photoresist layer on one of the metal layers of the second figure. The fourth to sixth figures are schematic views of a strip-shaped reticle for exposure, development, and etching to form a strip-shaped gate.

第七圖係於第六圖之金屬層及條形柵極表面覆蓋形成 光阻層之示意圖。 第八圖係於第七圖之光阻層表面應用光罩板並經曝 光、顯影、#刻之示意圖。 第九圖係進一步形成通孔之示意圖。 第十圖係沿第九圖之x-x線之剖面示意圖。 第十一圖係第十圖去掉光阻層後之剖面示意圖。 第十二圖係本發明方法製得之場發射顯示器之示意 圖。The seventh figure is a schematic view of the metal layer and the strip gate surface of the sixth figure covering the photoresist layer. The eighth figure is a schematic diagram of applying the mask plate to the surface of the photoresist layer of the seventh figure and exposing, developing, and engraving. The ninth diagram is a schematic view of further forming a through hole. The tenth figure is a schematic cross-sectional view along the x-x line of the ninth figure. The eleventh figure is a schematic cross-sectional view of the tenth figure after the photoresist layer is removed. Fig. 12 is a schematic view of a field emission display produced by the method of the present invention.

第十三圖係美國專利第6, 380, 67 1號揭露之場發射顯 示器之結構分解圖。 【主要元件符號說明】 絕緣薄板 10 金屬膜 12，13 條形柵極 14 光阻層 15，19 聚焦電極 16 光罩 17, 20 通孔 22 背基板 30Figure 13 is a structural exploded view of a field emission display disclosed in U.S. Patent No. 6,380,67. [Main component symbol description] Insulating thin plate 10 Metal film 12,13 Strip gate 14 Photoresist layer 15,19 Focusing electrode 16 Photomask 17, 20 Through hole 22 Back substrate 30

第13頁 1250820 圖式簡單說明 前基板 31 陰極 32 電子發射體 33 支撐柱 34 陽極 35 螢光層 37 絕緣側壁 38， 39 _酬 第14頁Page 13 1250820 Brief description of the diagram Front substrate 31 Cathode 32 Electron emitter 33 Support column 34 Anode 35 Fluorescent layer 37 Insulating sidewall 38, 39 _第第14页

Claims (1)

1250820 、、申凊專利範圍 — 一———. 1 · 一種場發射顧— +驟”、、員=态之製造方法，其包括以下步 ^ # · 一，提供一絕緣基板，其具有相對之兩平整夺 步驟二， 層金屬膜； 步驟三， 形栅極； 在所述絕緣基板之兩平整表面分別形成 在所述一層金屬膜上利用光刻方法形成條 步驟四’在所述條形柵極及絕緣基板另一表 對應之位置㈣去除部分金屬層及絕緣基： 二成通孔’從而得到條形柵極及聚焦電極一體之電極 核組；及 一 V驟五，將上述電極模組、場發射陰極以 經過對準、封裝形成場發射顯示器。 2·如申請專利範圍第1項所述之場發射顯示器之製造方 法’其中所述絕緣基板之材料包括玻璃、陶究。 3·如申請專利範圍第2項所述之場發射顯示器之製造。 法’其中所述絕緣基板為板材或片材，复 、 微米至數百微米範圍。 /、 又為數十 4·如申請專利範圍第1項所述之場發射顯示器之製造 法’其中所述步驟一係採用熱蒸錄、電子束蒸° 學鍍、電鍍或印刷方法實現。 ^ 1、化 5·如申請專利範圍第1項所述之場發射顯示器之製造 法，其中所述步驟三包括下列分步驟：在該""金H 塗佈光阻層’採用具有條形遮蔽區及條形透明區之光 1250820 六、申請專利範圍 --- 罩進行曝光、顯影以及蝕刻。 6.如申請專利範圍第丨項所述之場發射顯示器之製造方 法’其中所述步驟四包括下列分步驟：採用雙面曝光 技術在條形栅極及絕緣基板另—表面之金屬膜相互對 應之位置形成相互對應之凹槽，從而得到具有凹槽之 條形柵極及聚焦電極·’在所述對應凹槽相連之位置採 用嘴沙法、蝕刻或雷射打孔方法穿透絕緣基板形成通 子L 。 7·如申請專利範圍第6項所述之場發射顯示器之製造方 法’其中所述凹槽為圓形或方形。 8 ·如申请專利範圍第6項所述之場發射顯示器之製造方 法’其中所述雙面曝光技術包括在條形柵極及絕緣基 板另一表面之金屬膜表面塗佈光阻層，在兩光阻層應 用同一塊光罩板進行曝光，顯影，蝕刻金屬。 9·如申請專利範圍第8項所述之場發射顯示器之製造方 法，其中所述步驟四進一步包括去除剩餘之光阻。 10·如申請專利範圍第8項所述之場發射顯示器之製造方 法’其中所述凹槽係從所述光阻層延伸到絕緣基板。 11 ·如申請專利範圍第1項所述之場發射顯示器之製造方 法’其中所述場發射陰極包括背基板、陰極及電子發 射體。 X 1 2 ·如申請專利範圍第1項所述之場發射顯示器之製造方 法，其中所述螢光屏包括透明前基板、陽極及勞光 層。1250820, 申 凊 凊 — 一 一 一 凊 凊 凊 凊 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 员 员Two flattening step two, a layer of metal film; step three, a shaped gate; forming two strips on the surface of the insulating film on the two metal films by photolithography to form a strip step 4' in the strip gate The position of the pole and the other surface of the insulating substrate (4) removing part of the metal layer and the insulating base: two through holes 'to obtain a strip core and a focusing electrode integrated electrode core group; and a V step five, the above electrode module The field emission cathode is aligned and packaged to form a field emission display. 2. The method for manufacturing a field emission display according to claim 1, wherein the material of the insulating substrate comprises glass and ceramics. The invention discloses the manufacture of the field emission display according to the second aspect of the patent application. The method wherein the insulating substrate is a plate or a sheet, in the range of micrometers to several hundred micrometers. The manufacturing method of the field emission display described in claim 1 is in which the first step is implemented by thermal steaming, electron beam evaporation plating, electroplating or printing. ^ 1. 5: If the patent application scope The method of manufacturing a field emission display according to Item 1, wherein the step (3) comprises the following substeps: using light having a strip-shaped shielding area and a strip-shaped transparent area in the "" gold H coated photoresist layer 1250820 VI. Application for Patent Scope---The cover is exposed, developed, and etched. 6. The method for manufacturing a field emission display as described in the scope of the patent application of the present invention, wherein the step 4 includes the following sub-steps: double-sided exposure The technique forms mutually corresponding grooves at positions where the strip-shaped gate and the metal film on the other surface of the insulating substrate correspond to each other, thereby obtaining a strip-shaped gate having a groove and a focusing electrode at a position where the corresponding groove is connected The method of manufacturing a field emission display according to the sixth aspect of the invention is as follows: a method for manufacturing a field emission display according to claim 6 of the invention. The method of manufacturing a field emission display according to claim 6, wherein the double-sided exposure technique includes a metal film surface on the strip gate and the other surface of the insulating substrate. The photoresist layer is coated, and the same photomask is applied to the two photoresist layers to expose, develop, and etch the metal. The method of manufacturing the field emission display according to claim 8, wherein the step 4 is further The method of manufacturing the field emission display of claim 8, wherein the groove extends from the photoresist layer to the insulating substrate. 11 · As claimed in the patent application A method of manufacturing a field emission display according to the invention, wherein the field emission cathode comprises a back substrate, a cathode, and an electron emitter. The manufacturing method of the field emission display of claim 1, wherein the phosphor screen comprises a transparent front substrate, an anode, and a glazing layer.