TWI250056B - Heat dissipating device and method of making same - Google Patents

Heat dissipating device and method of making same Download PDF

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Publication number
TWI250056B
TWI250056B TW093113626A TW93113626A TWI250056B TW I250056 B TWI250056 B TW I250056B TW 093113626 A TW093113626 A TW 093113626A TW 93113626 A TW93113626 A TW 93113626A TW I250056 B TWI250056 B TW I250056B
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TW
Taiwan
Prior art keywords
heat
heat sink
metal nanoparticle
dissipating device
substrate
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Application number
TW093113626A
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Chinese (zh)
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TW200536637A (en
Inventor
Charles Leu
Tai-Cherng Yu
Ga-Lane Chen
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Hon Hai Prec Ind Co Ltd
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Priority to TW093113626A priority Critical patent/TWI250056B/en
Priority to US11/044,839 priority patent/US20050252637A1/en
Publication of TW200536637A publication Critical patent/TW200536637A/en
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Publication of TWI250056B publication Critical patent/TWI250056B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A heat dissipating device includes a base and a number of heat sinks formed thereon. The base and the heat sinks are both made from metal nano-particles. The base is integrally formed with the heat sinks by sintering. A method of making the same heat dissipating device is provided accordingly.

Description

1250056 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種散熱裝置及其製造方法。 【先前技術】 現階段電腦CPU現有的散熱方法主要係使用空氣冷卻方式,其中具有散熱 鰭片的散熱器使用最為廣泛。其主要由具有良好導熱性能的金屬製成,利用其 導熱性將熱量由CPU帶離並傳導至週邊找巾。並且,散熱騎常搭配有風 扇,由其導引空氣流動以提高散熱效率。 最初,散熱器多以鋁或鋁合金製成。但隨著CPU產生的熱量愈來愈多,單 純使用崎的散熱n開始不敷使用。於是以導熱性能更好的銅來製作的散熱片 應運而生。但是,銅的密度約為鋁的3倍(銅的密度約為8 4><1〇3千克/米3,鋁為 2·7χ1〇3千克/米3),亦即相同體積的銅比織約3倍。而散熱片通常置於咖上 方,其重量有-定限制。另,銅她相比,價格更為昂貴且加工性較差。因此, 為兼顧_較佳導熱性能及_重量輕、易加4優點,產生触複合式散熱 器。 目則,常狀贿複合式散熱器係㈣出所得之雜散_片之底3 α又置銅片使用時’銅片與cpu接觸並將其產生的熱量快速傳導至散熱彳 片,再擴散到空氣中。其中,該銅片與铭製散熱則的接合方式主要有: α中門物進仃間接式連接,如採聘鱗、魏·旨絲接物或者錫婷; 直接連接,如_賴、轉、料、硬焊、概接合、滾轧、魏焊接、 性變形等技術達成兩者之接合。惟,這些傳統加卫方紅藝繁項,且易使免 片與域散細之_熱阻增大。另,射_象散侧表面光滑 1250056 散熱面積錄’從轉致散缺率降低。 有^於此提t、種基底與散熱續片之間之接觸熱阻低且散熱效率高的散 熱裝置及其製造方法實為必要。 【内容】 為解、先月j技術之政熱裝置之基底與散熱縛片之間接觸熱阻高、散熱效率 -之門題本發明之目的在於提供—種基底與散熱則之間之接觸熱阻低且散 熱效率高的散熱裝置。 本毛月之3目的在於提供上述散熱裝置之製造方法。 為實現本發明之目的,本發騎提供之—種散錄置,其_底及位於 其上之複數散_片。其中,該基底及散熱鰭—由金屬奈米粉粒經燒結一體 成型而成。 其中’構成該基底及散_片之金屬奈米粉粒分別為第—金屬及第二金屬 之奈米粉粒。該散熱裝置還可進—步設置有用於提高其性能之附著物,如奈米 碳管。 本發明所提供之-種上述散熱裝置之製造方φ 為實現本發明之另一目的, 法,其包括步驟: ★提供-設有該散絲置之預定_的模型,其中該翻包括與該基底對應 的第一部位及與該散熱鰭片對應的第二部位; 於該模型之第一部位及第二部位處分別灌入金屬奈米粉粒; 將該襄有該金屬奈米粉粒之模型置於惰性氣氛中進行燒結以形成該散執 裝置。 7 1250056 ”中該k方法可進-步包括於所得之散熱裝置設置驗提高其性能之 附著物的麵’如·化學動目沈積法_散錄置基紅雜織_片之 表面生長奈米碳管。 另,上述金屬奈米粉粒可選自金、銀、銅、紹及其合金之一種。該金屬奈 米粉粒的粒徑可為1-99奈米。 相對於先前技術,本發明採用燒結方式製成散熱裝置,使得其基底與散熱 籍片成為-整體’其接觸熱阻顯著降低。同時,熱裝置之基底及散熱鰭片 均由具❺導熱性能的金屬奈米粉粒製成,其表面積將遠大於制其他傳統加工鲁 方式(如射λ細)所製狀囉型讀絲,從而提高雜鱗。 【實施方式】 下面將結合附圖對本發明作進一步之詳細說明。 請參閱第-圖,本發明提供之散熱裝置5,其包括基底5〇及位於其上之複 數散熱鰭片52。其中,該基底5〇及散熱鰭片52係纟金屬奈米粉粒經燒結一體成 型而成。 請參閱第二圖,本發明提供之一種上述散熱裝置$的製造方法G,包括以下鲁 步驟: 步驟60,提供-設有該散熱裝置5之預定_的模型,其中該模型包括與 該基底50對應的第一部位及與該散熱鰭片52對應的第二部位; 步驟62,於該模型之第一部位及第二部位處分別灌入金屬奈米粉粒; 步驟64,將該裝有該金屬奈米粉粒之模型置於惰性氣氛中進行燒結以形成 該散熱裝置5。 1250056 請一並參閱第一、二圖,上述之金屬奈米粉粒應選自具有高導熱性能的金 屬材料,如金、銀、銅、鋁及其合金之一種。該金屬奈米粉粒的粒徑最好為1-99 奈米。 應指出的是,構成該基底50及散熱鰭片52之金屬奈米粉粒可為同一金屬之 奈米粉粒(如均選用鋁),亦可分別選用不同金屬之奈米粉粒(如基底5〇用銅材 料、散熱鰭片52用鋁材料)。也就是說,步驟62中,可根據實際需要,於該模 型之第一部位及第二部位處分別灌入相同或不同孓金屬奈米粉粒。 另,該散熱裝置5可進一步設置有用於提高其性能之附著物,如於散熱鰭鲁 片表面塗覆奈米碳球等材料以進一步提高其散熱性能。本實施例中,該附著物 為奈米碳管54。其位於該基底50之遠離散熱鰭片52之表面5〇1,且最好垂直於 該表面501。使用時,基於奈米碳管54之優異的軸向導熱性,其將把cpu產生· 之熱量迅賴導至基細,制使織織置5讀触社幅提冑。 · 其中’該奈米碳管54係採用化學氣相沈積法生長而成:於該基底5〇之表面 501設置催化劑,並將其置於化學蒸氣成長反應器内,通入碳源氣且使其於預 定溫度與催化劑接觸使得奈米碳管54基本垂直於該表面5〇1長出。可以理解的修 疋’該製造方法6可進-步包括上述設魏附著物尤其是該奈米碳管的步驟。 另,本領域技術人員應知曉,本發明亦可用於製備習知技術領域之其他形 狀之散熱器,而不必限於上述實施例。 相對於先前技術,本發明燒财讀成散齡置,使得其基底與散熱 韓片成為-整體,其接觸熱阻顯著降低。同時,該散熱裝置之基底及散熱讀片 均由具南導熱性能的金屬奈綠粒製成,其表面積將遠大則細其他傳統加工 9 1250056 方式(如射出)所製得之同體型之散_,從而提高散熱效率。 綜上所述,本發明確已符合發明專利之條件,兹依法提出專利申請。另外, 以场述僅為本發明之較佳實施例,凡熟悉本紐藝人士,依转發明精神所 作等效修•錢化,皆應包含在以τ專利翻要求書内。 【圖式簡單說明】 第一圖係本發明之散熱裝置之示意圖; 第二圖係本發明之散熱裝置製造方法之流程示意圖。 【主要元件符號說明】 散熱裝置 5 表面 501 奈米碳管 54 基底 散熱鰭片 50 521250056 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a heat sink and a method of manufacturing the same. [Prior Art] At present, the existing cooling methods for computer CPUs mainly use air cooling, and the heat sink with heat sink fins is the most widely used. It is mainly made of metal with good thermal conductivity, and its thermal conductivity is used to carry heat away from the CPU and conduct it to the periphery to find the towel. Moreover, the heat sink is often equipped with a fan that directs air flow to improve heat dissipation efficiency. Initially, the radiator was mostly made of aluminum or aluminum alloy. However, as the heat generated by the CPU is getting more and more, the use of the heat sink of the pure use of n is not enough. Therefore, a heat sink made of copper with better thermal conductivity came into being. However, the density of copper is about three times that of aluminum (the density of copper is about 8 4 >< 1 〇 3 kg / m 3 , and the aluminum is 2 · 7 χ 1 〇 3 kg / m 3 ), that is, the same volume of copper ratio Weaving about 3 times. The heat sink is usually placed on top of the coffee, and its weight has a certain limit. In addition, copper is more expensive and less processable than her. Therefore, in order to achieve both the superior thermal conductivity and the advantages of light weight and easy addition, a touch-type heat sink is produced. The standard, the bribe composite heat sink system (four) out of the stray _ the bottom of the film 3 α and the copper sheet when used 'copper sheet and cpu contact and quickly transfer the heat generated to the heat sink, then spread Into the air. Among them, the joint mode of the copper piece and the inscription heat dissipation are mainly as follows: α-indoor connection, indirect connection, such as mining scales, Wei·wire joints or tinting; direct connection, such as _ 赖, 转, Techniques such as material, brazing, brazing, rolling, weir welding, and deformation are achieved. However, these traditions add to the defensive side of the red art, and it is easy to increase the thermal resistance of the film and the domain. In addition, the surface of the _ astigmatism side is smooth. 1250056 The heat dissipation area is recorded as the vacancy rate is reduced. It is necessary to provide a heat sink having a low contact thermal resistance between the substrate and the heat sink and high heat dissipation efficiency, and a method of manufacturing the same. [Contents] The contact between the substrate and the heat dissipating block of the first month j technology is high in thermal resistance and heat dissipation efficiency. The purpose of the present invention is to provide contact thermal resistance between the substrate and the heat sink. Low heat dissipation and high heat dissipation. The purpose of this month is to provide a method of manufacturing the above heat sink. For the purpose of the present invention, the present invention provides a scatter recording, a bottom and a plurality of scatterers on it. The substrate and the heat dissipating fin are formed by sintering a metal nanoparticle. The metal nanoparticle particles constituting the substrate and the dispersion sheet are the nanoparticles of the first metal and the second metal, respectively. The heat sink can be further provided with an attachment for improving its performance, such as a carbon nanotube. The invention of the above-mentioned heat dissipating device provided by the present invention is another object of the present invention. The method comprises the steps of: providing: a model provided with a predetermined amount of the filament, wherein the flip includes a first portion corresponding to the substrate and a second portion corresponding to the heat dissipation fin; wherein the first portion and the second portion of the model are respectively filled with metal nanoparticles; and the model of the metal nanoparticle is Sintering is carried out in an inert atmosphere to form the dispensing device. 7 1250056 ” The k method can be further included in the surface of the obtained heat sink device to improve the performance of the attachment surface. [Chemical eye deposition method _ scatter base red woven woven film surface growth nano Further, the above metal nanoparticle may be selected from the group consisting of gold, silver, copper, and an alloy thereof. The metal nanoparticle may have a particle diameter of 1-99 nm. Compared with the prior art, the present invention adopts The sintering method is used to form a heat dissipating device, so that the substrate and the heat dissipating film become a whole, and the contact thermal resistance thereof is remarkably reduced. Meanwhile, the substrate of the thermal device and the heat dissipating fin are made of metal nano particles having thermal conductivity. The surface area will be much larger than that of other conventional processing methods (such as shot λ fine) to improve the scales. [Embodiment] The present invention will be further described in detail below with reference to the accompanying drawings. The heat dissipation device 5 of the present invention comprises a substrate 5 and a plurality of heat dissipation fins 52. The substrate 5 and the heat dissipation fins 52 are formed by sintering a metal nanoparticle. Please refer to the second The manufacturing method G of the above heat dissipating device $ provided by the present invention comprises the following steps: Step 60, providing a model of the predetermined heat sink 5, wherein the model includes a first portion corresponding to the substrate 50 And a second portion corresponding to the heat dissipation fin 52; Step 62, respectively filling the metal nanoparticle particles at the first portion and the second portion of the model; Step 64, the model containing the metal nanoparticle particles Sintering is carried out in an inert atmosphere to form the heat sink 5. 1250056 Please refer to the first and second figures together. The above metal nanoparticle should be selected from metal materials with high thermal conductivity, such as gold, silver, copper and aluminum. The metal nanoparticle particles preferably have a particle diameter of from 1 to 99 nm. It should be noted that the metal nanoparticle constituting the substrate 50 and the heat dissipation fins 52 may be the same metal nanoparticle. (If aluminum is used), it is also possible to use different kinds of nano-nano particles (such as copper material for base 5〇 and aluminum material for heat-dissipating fin 52). That is to say, in step 62, according to actual needs, The first part of the model The second portion is filled with the same or different bismuth metal nanoparticles. In addition, the heat dissipating device 5 can be further provided with an attachment for improving the performance, such as coating the surface of the heat-dissipating fin with a material such as nano carbon spheres. The heat sinking performance is further improved. In this embodiment, the deposit is a carbon nanotube 54. It is located on the surface of the substrate 50 away from the heat sink fin 52, and is preferably perpendicular to the surface 501. Based on the excellent axial thermal conductivity of the carbon nanotubes 54, it will quickly transfer the heat generated by the cpu to the base, and make the woven fabric 5 touches the body. · Among the 'carbon nanotubes' The 54 series is grown by chemical vapor deposition: a catalyst is disposed on the surface 501 of the substrate, and placed in a chemical vapor growth reactor, and a carbon source gas is introduced and brought into contact with the catalyst at a predetermined temperature. The carbon nanotubes 54 grow substantially perpendicular to the surface 5〇1. It is to be understood that the manufacturing method 6 can further comprise the step of providing the above-mentioned Wei attachment, in particular the carbon nanotube. Further, those skilled in the art will appreciate that the present invention can also be used to prepare heat sinks of other shapes in the prior art, and is not necessarily limited to the above embodiments. Compared with the prior art, the present invention burns the money into a sturdy age, so that the substrate and the heat-dissipating film become a whole, and the contact thermal resistance is remarkably lowered. At the same time, the substrate and the heat-dissipating film of the heat-dissipating device are made of metal nano-green particles with south thermal conductivity, and the surface area of the heat-dissipating device is much larger than that of other conventional processing 9 1250056 (such as injection). , thereby improving heat dissipation efficiency. In summary, the present invention has indeed met the conditions of the invention patent, and a patent application is filed according to law. In addition, the description of the present invention is only a preferred embodiment of the present invention. Anyone who is familiar with the New Zealand artist and who is equivalent to the invention in the spirit of the invention should be included in the request for the τ patent. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic view of a heat dissipating device of the present invention; the second drawing is a schematic flow chart of a heat dissipating device manufacturing method of the present invention. [Main component symbol description] Heat sink 5 Surface 501 Carbon tube 54 Substrate Heat sink fin 50 52

Claims (1)

1250056 十、申請專利範圍: 1·種政熱裝置,其包括基底及位於其上之複數散熱續片,其中,該基底 及散熱鰭片係由金屬奈米粉粒經燒結一體成型而成。 2·如申請專利範圍第!項所述之散熱裝置,其巾,構成該基底及散熱錯片 之金屬奈米粉粒分別為第一金屬及第二金屬之奈米粉粒。 3·如申清專利範圍第i項或第2項所述之散熱裝置,其中,該金屬奈米粉 粒選自金'銀、銅、鋁及其合金之一種。 4·如申請專利範圍第i項或第2項所述之散熱裝置,其中,該金屬奈米粉 粒的粒徑為1-99奈米。 5·如申凊專利範圍第1項所述之散熱裝置,其中,該散熱裝置進一步設置 有奈米碳管。 6·如申请專利範圍第5項所述之散熱裝置,其中,該奈米碳管位於該散熱 裝置基底之返離該散熱籍片之表面。 7·—種包括基底及位於其上之複數散熱鰭片之散熱裝置的製造方法,其包 括步驟: 〃 提供一設有該散熱裝置之預定圖形的模型,其中該模型包括與該基底對廡 的第一部位及與該散熱鰭片對應的第二部位; “ 於該模型之第一部位及第二部位處分別灌入金屬奈米粉粒; 將該裝有該金屬奈米粉粒之模型置於惰性氣氛中進行燒結以形成該散熱聿 置〇 ^ 灌入該模型 二金屬之奈 8·如申請專利範圍第7項所述之散熱裝置的製造方法,其中, 之第一部位及第二部位處之金屬奈米粉粒分別為第一金屬及第 米粉粒。 9·如申請專利範圍第7項或第8項所述之散熱裝置的製造方法,其中·· 金屬奈米粉粒選自金、銀、銅、鋁及其合金之一種。 、 該 10·如申請專利範圍第7項或第8項所述之散熱裝置的製造方法,其中= 金屬奈米粉粒的粒徑為1-99奈米。 一 ’該 11.如申請專利範圍第7項所述之散熱裝置的製造方法,其中,該 進一步包括於所得之散熱裝置設置用於提高其性能之附著物的步^ k方法 11 1250056 12. 如申請專利範圍第11項所述之散熱裝置的製造方法,其中,該附著物為 奈米碳管。 13. 如申請專利範圍第12項所述之散熱裝置的製造方法,其中,該奈米碳 管係採用化學氣相沈積法於該散熱裝置基底之遠離該散熱鰭片之表面生長 而成。1250056 X. Patent application scope: 1. A political thermal device comprising a substrate and a plurality of heat-dissipating fins thereon, wherein the substrate and the heat-dissipating fins are formed by sintering a metal nano-particle. 2. If you apply for a patent range! The heat dissipating device according to the item, wherein the metal nanoparticle particles constituting the substrate and the heat dissipating sheet are respectively the first metal and the second metal nanoparticle. 3. The heat sink of claim 1, wherein the metal nanoparticle is selected from the group consisting of gold 'silver, copper, aluminum and alloys thereof. 4. The heat sink according to item i or item 2, wherein the metal nanoparticle has a particle size of from 1 to 99 nm. 5. The heat sink according to claim 1, wherein the heat sink is further provided with a carbon nanotube. 6. The heat sink of claim 5, wherein the carbon nanotube is located on a surface of the heat sink substrate that is returned from the heat sink. 7. A method of fabricating a heat sink comprising a substrate and a plurality of heat sink fins thereon, the method comprising the steps of: 〃 providing a model having a predetermined pattern of the heat sink, wherein the model includes a surface opposite the substrate a first portion and a second portion corresponding to the heat dissipation fin; "a metal nanoparticle is poured into the first portion and the second portion of the model; and the model containing the metal nanoparticle is placed in an inert state Sintering in an atmosphere to form the heat dissipating device, and injecting into the model, the method of manufacturing the heat dissipating device according to claim 7, wherein the first portion and the second portion are The metal nanoparticle particles are respectively the first metal and the second rice powder. 9. The method for manufacturing a heat sink according to claim 7 or 8, wherein the metal nanoparticle is selected from the group consisting of gold, silver and copper. The method for manufacturing a heat sink according to claim 7 or claim 8, wherein the particle size of the metal nanoparticle is 1-99 nm. The 11. The method for manufacturing a heat dissipating device according to Item 7, wherein the method further comprises the step of providing the heat dissipating device with the heat dissipating device for improving the adhesion of the device. 11 1250056 12. As claimed in claim 11 The method for manufacturing a heat dissipating device, wherein the deposit is a carbon nanotube. The method for manufacturing a heat dissipating device according to claim 12, wherein the carbon nanotube system is chemical vapor deposition The method is formed by growing a surface of the heat sink base away from the heat dissipation fin. 1212
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US20060175042A1 (en) * 2005-02-08 2006-08-10 Kuo Yung-Pin Heat dispensing device
TWI264415B (en) * 2005-11-30 2006-10-21 Ind Tech Res Inst Heat transfer fluids with heteroatom-containing nanocapsules
DE112007003648T5 (en) * 2007-09-14 2010-08-26 Advantest Corp. Improved temperature control interface
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US9851161B2 (en) * 2012-01-03 2017-12-26 Lockheed Martin Corporation Heat exchanger construction using low temperature sinter techniques
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* Cited by examiner, † Cited by third party
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US5514327A (en) * 1993-12-14 1996-05-07 Lsi Logic Corporation Powder metal heat sink for integrated circuit devices
US5814536A (en) * 1995-12-27 1998-09-29 Lsi Logic Corporation Method of manufacturing powdered metal heat sinks having increased surface area
JPH1060570A (en) * 1996-08-23 1998-03-03 Injietsukusu:Kk Sintered compact and its production
US6569397B1 (en) * 2000-02-15 2003-05-27 Tapesh Yadav Very high purity fine powders and methods to produce such powders
US6310771B1 (en) * 2000-11-14 2001-10-30 Chuan-Fu Chien CPU heat sink
JP3529358B2 (en) * 2001-02-07 2004-05-24 古河電気工業株式会社 Finned heat sink
CA2371641A1 (en) * 2001-02-14 2002-08-14 Ats Automation Tooling Systems Inc. Folded fin heat sink assembly
US6797336B2 (en) * 2001-03-22 2004-09-28 Ambp Tech Corporation Multi-component substances and processes for preparation thereof
US6749009B2 (en) * 2002-02-20 2004-06-15 Delphi Technologies, Inc. Folded fin on edge heat sink
US7108055B2 (en) * 2002-03-29 2006-09-19 Advanced Energy Technology Inc. Optimized heat sink using high thermal conducting base and low thermal conducting fins
US7112472B2 (en) * 2003-06-25 2006-09-26 Intel Corporation Methods of fabricating a composite carbon nanotube thermal interface device

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