TWI249255B

TWI249255B - Nitride light-emitting diode and mthod for manufacturing the same

Info

Publication number: TWI249255B
Application number: TW93109656A
Authority: TW
Inventors: Chang-Hsing Chu; Kui-Hui Yu; Chi-Meng Lu; Hsueh-Lin Li; Shi-Ming Chen
Original assignee: Epitech Corp Ltd; Shi-Ming Chen
Priority date: 2004-04-07
Filing date: 2004-04-07
Publication date: 2006-02-11
Also published as: KR20050099446A; KR100630306B1; JP2005303252A; TW200534499A

Abstract

A nitride light-emitting diode and a method for manufacturing the same are disclosed. The nitride light-emitting diode includes a P-type electrode, a N-type electrode and a P-type transparent contact layer that are composed of titanium nitride related materials. The titanium nitride related materials not only have excellent ohmic contact property and transparency, but also have great thermal stability, so the thermal stability of the light-emitting diode can be effectively improved.

Description

1249255 五、發明說明（1) 【發明所屬之技術領域] 本發明是有關於一種氮化物發光二極體及其製造方法，且特別是有關'於一種具有極佳熱穩定性之氮化物發光二極體及其製造方法。【先前技術】發光二極體元件係利用半導體材料所製作而成的元件，為一種可將電能轉換成光能之微細固態光源。由於，此類發光二極體元件不但體積小，更具有驅動電壓低、反應速率快、耐震、壽命長等特性，且又可配合各式應用設備輕、薄、短、小之需求，因而已成為曰常生活中相當普及之電子產品。近來’在發光元件之研究上，眾多焦點集中在以氮化物，例如氮化鎵（GaN)、氮化鋁鎵（AlGaN)、氮化銦鎵 (InGaN)、以及氮化鋁銦鎵（A1InGaN^，為主之半導體所形成的發光元件。此類的發光元件半導體大多成長於不導電之藍寳石（Sapphire)基板上，而與其他發光元件採用可導電的基板不同。睛參照第1圖，第1圖係繪示傳統發光二極體之剖面圖。在傳統之發光二極體1 〇〇中，緩衝層1 〇 4先形成於透明基板 102上’再於緩衝層1〇4上依序磊晶成長N塑半導體層1〇6、 N型侷限層1 〇 8、發光層1 1 〇、p型侷限層1 1 2 、以及P塑半導體層1 1 4。接下來，利用微影與蝕刻製程進行發光二極體10 0之圖案化，而移除部分之p型半導體層114、部分之丨1249255 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a nitride light-emitting diode and a method of fabricating the same, and in particular to a nitride light-emitting diode having excellent thermal stability. Polar body and its manufacturing method. [Prior Art] A light-emitting diode element is an element made of a semiconductor material and is a fine solid-state light source that converts electrical energy into light energy. Because such a light-emitting diode component is not only small in size, but also has the characteristics of low driving voltage, fast reaction rate, shock resistance, long life, and the like, and can be matched with various applications, such as light, thin, short, and small, It has become a popular electronic product in everyday life. Recently, in the research of light-emitting elements, many focuses on nitrides such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (A1InGaN^). A light-emitting element formed by a semiconductor that is mainly used. Such a light-emitting element semiconductor is often grown on a non-conductive sapphire substrate, and is different from other light-emitting elements in that a conductive substrate is used. 1 is a cross-sectional view of a conventional light-emitting diode. In a conventional light-emitting diode, a buffer layer 1 〇4 is first formed on a transparent substrate 102, and then on the buffer layer 1〇4. Crystal growth N plastic semiconductor layer 1 〇 6, N type confined layer 1 〇 8, luminescent layer 1 1 〇, p type confined layer 1 1 2, and P plastic semiconductor layer 1 1 4. Next, using lithography and etching process Patterning of the light-emitting diode 10 is performed, and a portion of the p-type semiconductor layer 114 is removed, and a portion thereof is removed.

第9頁 1249255 五、發明說明（2) 型侷限層112、部分之發光層iiq、以及部分之n型侷限層 108’直至暴露出部分之N型半導體層ι〇β為止。其中，為了確保製程'之可靠度，部分之Ν型半導體層1〇6也在此圖'案化過程中遭到移除。接著，形成ρ型透明接觸層i丨6於ρ型' 半導體層1 1 4上。然後，分別於Ν型半導體層i 〇 6之暴露部分以及部分之P型透明接觸層1丨6上形成N塑電極1 2 0與p型電極118，而完成發光二極體ι〇〇。在傳統之發光二極體1 0 0中，p型透明接觸層i丨6大多採用鎳層/金層堆疊結構，N型電極i 2 〇_般係採用鈦層/鋁層堆疊結構，而P型電極118通常則係採用鎳層/金層堆疊結構。對鎳層/金層堆疊結構之p型透明接觸層J丨6與p型電極 1 1 8而a ，因為考慮透光性因素，P型透明接觸層i丨6與？型電極118之f度均相當薄。如此一來，導致p型透明接觸層 H之定度<不佳。其次，在鈦層/紹層堆疊結構之_ 電極1 2 0中，受到|呂之埶德教 ^ 1 9Π^ ^ ^ ^ …遷移特性的影響，也造成Ν型電極1 2 0之熱穩定性不佳。因斗型電極118之厚度相當f =::，到ρ型透明接觸層116與Ρ 性的马燮 b I道Α專及Ν型電極120中鋁之熱遷移特 !·生的衫響，均會導致熱穩定性，期操作下，發光二極體光二極體1 00之操作性能下降，於疋不僅《每成务 100之使用壽命也會大幅縮短【發明内容】因此，本發明之目的就是為其Ρ型透明接觸層與ρ型電二一種氮化物發光二極體， °之材質係採用氮化鈦相關材Page 9 1249255 V. DESCRIPTION OF THE INVENTION (2) The type of localization layer 112, a portion of the light-emitting layer iiq, and a portion of the n-type confinement layer 108' are until a portion of the N-type semiconductor layer ιβ is exposed. In order to ensure the reliability of the process, some of the germanium semiconductor layers 1〇6 were also removed during the process of this figure. Next, a p-type transparent contact layer i 丨 6 is formed on the p-type 'semiconductor layer 1 1 4 . Then, an N-shaped electrode 120 and a p-type electrode 118 are formed on the exposed portion of the 半导体-type semiconductor layer i 〇 6 and a portion of the P-type transparent contact layer 1 分别 6, respectively, to complete the light-emitting diode ι. In the conventional light-emitting diode 100, the p-type transparent contact layer i丨6 mostly adopts a nickel layer/gold layer stack structure, and the N-type electrode i 2 〇_likely adopts a titanium layer/aluminum layer stack structure, and P The type electrode 118 is typically a nickel/gold layer stack. For the nickel-layer/gold layer stack structure, the p-type transparent contact layer J丨6 and the p-type electrode 1 18 and a, because of the translucency factor, the P-type transparent contact layer i丨6 and ? The f-degree of the type electrode 118 is relatively thin. As a result, the degree of the p-type transparent contact layer H is <not good. Secondly, in the titanium layer/shou layer stack structure _ electrode 1 2 0, influenced by the migration characteristics of | Lu Zhide teaching ^ 1 9 Π ^ ^ ^ ^ ..., also caused the thermal stability of the Ν-type electrode 120 Not good. Since the thickness of the bucket electrode 118 is equivalent to f =::, the heat transfer of the aluminum to the p-type transparent contact layer 116 and the 燮燮 I I Α Α Ν Ν 电极电极 ! ! ! ! ! ! ! · · · · It will lead to thermal stability. Under the operation, the operation performance of the light-emitting diode photodiode 100 will be degraded. In addition, the service life of each service 100 will be greatly shortened. [Inventive content] Therefore, the object of the present invention is For its 透明-type transparent contact layer and ρ-type electric two-nitride luminescent diode, the material of ° is made of titanium nitride related material.

1249255 五、發明說明（3) 1好之歐姆=Γ鈦相關材料不但具有透明特性，且可提供觸能力’更具有…熱穩定性。故，可提丨本發明熱穩定性。採用新於从4 的疋在提供一種氮化物發光二極體，其係 I 了^r二_。相關材料來製作Ν型電極與Ρ型電極。因此，除 '. η電極與Ρ型電極達到良好之歐姆接觸以外，Ν型 I =二2 更具有相當優異之熱穩定性。如此一來，可有善毛光二極體元件之熱穩定度。 | ^明之又一目的是在提供一種氮化物發光二極體之製造 f ί1ί係在含鈦材料薄膜形成後，利用退火方式，而於氮氣展i兄將3鈦材料薄膜轉變成氮化鈦相關材料層，來作為P型透明接觸層、p型電極以及N型電極之材料。由於氮化欽相關材料之熱穩定性高，因此，可改善發光二極體元 |件之熱穩定性，而提升發光二極體元件之操作性能，進而有效延長發光二極體元件之使用壽命。根據本發明之上述目的，提出一種氮化物發光二極體，至少包括··一透明基板；一 N塑半導體層位於此透明基板 I上’ 一發光蠢晶結構位於部分之N型半導體層上，且暴露 !出另一部分之N型半導體層P型半導體層位於上述之發光磊晶結構上；一 p型氮化物透明接觸層位於p型半導體声上；一 N型電極位於N型半導艨層之暴露部分上；以及一 ^ 型電極位於部分之P型氮化物遂明接觸層上，其中N型電與P型電極之材質至少包括/氮化鈦相關材料。亟依照本發明一較佳實施例，N裂電極可為氮化銥層/益呂1249255 V. INSTRUCTIONS (3) 1 Good ohms = Γ Titanium related materials not only have transparent properties, but also provide touch ability 'more... thermal stability. Therefore, the thermal stability of the present invention can be improved. A nitride light-emitting diode is provided by a new one from 4, which is a ^2. Related materials are used to make the Ν-type electrode and the Ρ-type electrode. Therefore, in addition to the '. η electrode and the Ρ-type electrode achieving good ohmic contact, Ν type I = two 2 has quite excellent thermal stability. In this way, the thermal stability of the good-light diode component can be achieved. Another purpose of the invention is to provide a nitride light-emitting diode manufacturing method. After the formation of the titanium-containing material film, an annealing method is used, and in the nitrogen gas exhibition, the 3 titanium material film is converted into titanium nitride. The material layer serves as a material for the P-type transparent contact layer, the p-type electrode, and the N-type electrode. Due to the high thermal stability of the nitriding material, the thermal stability of the illuminating diode element can be improved, and the operational performance of the illuminating diode component can be improved, thereby prolonging the service life of the illuminating diode component. . According to the above object of the present invention, a nitride light-emitting diode is provided, comprising at least a transparent substrate; an N-plastic semiconductor layer is disposed on the transparent substrate I, and a light-emitting amorphous structure is located on a portion of the N-type semiconductor layer. And exposing another part of the N-type semiconductor layer P-type semiconductor layer on the above-mentioned luminescent epitaxial structure; a p-type nitride transparent contact layer is located on the p-type semiconductor sound; an N-type electrode is located in the N-type semi-conductive layer And a portion of the electrode is located on a portion of the P-type nitride contact layer, wherein the material of the N-type and P-type electrodes comprises at least a titanium nitride-related material. According to a preferred embodiment of the present invention, the N-crack electrode may be a tantalum nitride layer/Yi Lu

IHIH

第11頁 1249255 五、發明說明（4) 銅化合物層/氮化鈦層堆疊妹场 /入麻仏田从碰详且、、口構，且P型電極可為虱 1 /金層堆璺結構。化銶層方根據本發明' 之目的，提出_插> 法，至少包括：先形成f N型種半\化物發光二極體:板-:義形成一發光蟲晶結構於部分導體層於一透明^露出 I另一部为之N型半導體層；接下艏廣f 恭龙圣·旦么士德I* ·本…个 π/肌 τ 、p炎半於暴露部發光蟲晶結構上；再形成一 p :，办风一 ^干導體層上；接著，形成一 _ ^，化物透明接觸層乙 I八μ ·妙％…二、隨電極於Ν型半導體層之刀上，然後，形成一ρ型電極於部分之ρ型氮化物透層上，其中上述Ν型電極與Ρ型谷〆氮化鈦相關材料。 I電極之材質至少包拍依照本發明一較佳實施例，形 ^ 1U 鈦相關材料時，先形成一含電極與15型電極之^干退火步驟，以將含鈦薄臈，再於氮氣環境下進：丨薄膜之退火步驟時m;”氮化合物層。進行含欽丨夕鬥p 4 θ地^ 士 1佳是控制在介於5(TC至1 000〇C 之間更佳疋控制在介於3〇〇t至7〇(rc之 |藉由使用氮化欽相關材料來製 B 以及N型電極’不僅具有透明P型電極接觸能力’更具有極為優良之熱穩定性因此良好之歐姆 1善發光二極體元件之熱穩定性，因此，可大幅改以及延長元件壽命的目的。 70件之操作性能【實施方式】本發明揭露-種氮化物發光二極表k方法，其係採透明接觸Page 11 1249255 V. Description of invention (4) Copper compound layer/titanium nitride layer stacking sister field/into 麻仏田 from the touch and the mouth structure, and the P-type electrode can be 虱1 / gold layer stacking structure . According to the purpose of the present invention, the bismuth layer method comprises: forming a f N type seed semi-material light-emitting diode: a plate-: forming a luminescent crystal structure in a part of the conductor layer A transparent ^ exposes the other part of the N-type semiconductor layer; followed by the 艏 f f 恭圣圣 · 旦旦么 I I I * * * * 个个肌肌肌肌肌肌肌肌肌肌肌肌肌肌肌肌肌肌肌And then form a p:, run a wind on the dry conductor layer; then, form a _ ^, the compound transparent contact layer B I 8 μ · Miao% ... 2, with the electrode on the Ν type semiconductor layer of the knife, then, A p-type electrode is formed on a portion of the p-type nitride permeation layer, wherein the germanium-type electrode is related to the barium-type barium nitride titanium nitride-related material. The material of the I electrode is at least coated according to a preferred embodiment of the present invention. When the titanium-related material is formed, a dry annealing step of the electrode-containing electrode and the 15-type electrode is first formed to remove the titanium-containing thin crucible and then the nitrogen atmosphere. Advance: 退火 film annealing step m; "nitrogen compound layer. Carrying 丨丨 p p 4 θ 地 ^ 士 1 is controlled between 5 (TC to 1 000 〇 C better 疋 control Between 3〇〇t and 7〇(rc|by using nitrided materials to make B and N-type electrodes not only have transparent P-type electrode contact ability' but also has excellent thermal stability and therefore good ohms 1 The thermal stability of the good light-emitting diode element can be greatly improved and the life of the component can be greatly improved. The operating performance of 70 pieces [Embodiment] The present invention discloses a method for a nitride light-emitting diode table k Transparent contact

1249255 五、發明說明（5) _ 用氮化鈦相關材料來作型電極。由於氮仆处士 μ 1透明接觸層、Ρ型電極以及Ν 異之歐姆接觸與熱穩定性料不僅具透明特性，更兼具優熱穩定性，達到^ :疋从’因此可提升發光二極體元件之壽命的目的。為了^操作性能以及延長元件之使用照下列描述並配合第2圖？圖之示敘述更加詳盡與完備’可參睛參照第2圖，第2圖孫終-α 種發μ 3係、、"不依照本發明一較佳實施例的一裡發九一極體之剖面圖。菸只 -炻舻，恭止,A 發先—極體200可為氮化物發光 ; ; 2〇°之製作，首先提供透明基板202。 I：:薛i 二極體中’⑨明基板202之材質可例〇 :且貝石。接下來’利用例如磊晶方式於透明基板2 0 2 上成長緩衝層204,以利後續磊晶層之成長。其中，緩衝層2 0 4之材質可例如為氮化鎵。待緩衝層2 〇 4形成後，利用例如磊晶方式於緩衝層204上成長Ν型半導體層2〇6，其中Ν 型半導體層206之材質較佳為ν型氮化鎵。接著，利用例如磊晶方式成長發光磊晶結構，而於Ν型半導體層2 0 6上依序成長Ν型侷限層2 0 8、發光層2 1 0以及ρ型侷限層2 1 2。其中，發光層2 1 0較佳可為多重量子井 (Mul tipi e Quantum Wei 1 ; MQW)結構。待發光磊晶結構形成後’利用例如蟲晶方式於發光蠢晶結構之P型偈限層21 2 上成長P型半導體層2 1 4。其中，P型半導體層2 1 4之材9質較佳可為P型氮化鎵。完成P型半導體層2 1 4後，即可利用例如微影與蝕刻方式來進行發光二極體20 0之圖案化步驟，而移除部分之P型半導體層2 1 4、部分之ρ型侷限層2 1 2、部1249255 V. INSTRUCTIONS (5) _ Use titanium nitride related materials to shape the electrode. Since the nitrogen servant μ 1 transparent contact layer, the Ρ-type electrode and the ohmic contact and the thermal stability material are not only transparent, but also have excellent thermal stability, the ^ 疋 ' ' 因此因此因此因此因此因此因此因此因此因此因此因此因此The purpose of the life of the component. For the operation and the use of the extension components, please refer to the following description and match the second diagram? The description of the figure is more detailed and complete. [Equipped with reference to Fig. 2, Fig. 2, the end of the sun-α seeding μ 3 system, " a non-peripheral body according to a preferred embodiment of the present invention Sectional view. Smoke only - 炻舻, 恭, A hair first - the body 200 can be nitride luminescence; 2 〇 ° production, first provide a transparent substrate 202. I:: The material of the '9 bright substrate 202 in the Xue i diode can be exemplified by: and stone. Next, the buffer layer 204 is grown on the transparent substrate 220 by, for example, epitaxy, to facilitate the growth of the subsequent epitaxial layer. The material of the buffer layer 220 may be, for example, gallium nitride. After the buffer layer 2 〇 4 is formed, the Ν-type semiconductor layer 2 〇 6 is grown on the buffer layer 204 by, for example, epitaxy. The material of the Ν-type semiconductor layer 206 is preferably ν-type gallium nitride. Next, the luminescent epitaxial structure is grown by, for example, epitaxial growth, and the 局-type confinement layer 208, the luminescent layer 2 1 0, and the p-type confined layer 2 1 2 are sequentially grown on the Ν-type semiconductor layer 206. The luminescent layer 210 is preferably a multi-quantum well (Mul tipi e Quantum Wei 1 ; MQW) structure. After the formation of the luminescent epitaxial structure is formed, the P-type semiconductor layer 2 14 is grown on the P-type confinement layer 21 2 of the luminescent crystal structure by, for example, insect crystal. Among them, the material of the P-type semiconductor layer 2 14 is preferably P-type gallium nitride. After the P-type semiconductor layer 2 14 is completed, the patterning step of the light-emitting diode 20 can be performed by, for example, lithography and etching, and a portion of the P-type semiconductor layer 2 1 4 and a portion of the ρ-type limitation are removed. Layer 2 1 2

1249255 五、發明說明（6) ^---—— 分之發光層210、以及部分之N型侷限層208，直至暴命屮部分之N型半導體層2 0 6,以利後續形成型電極 N型半導體層2 0 6接觸。在發光二極體2 〇〇之圖案化步驟’、中，為了確保N型半導體層20 6在圖案化步驟後有暴露通常採取過蝕刻（Over-etching)之手段。如此一來，、一圖案化步驟中，亦移除了部分之N型半導體層2 〇 ;此 2圖所示。 s ’ Μ 隨後，先利用例如電鍍、無電極電鍍或沉積的方式形鈦材料薄膜（未繪示）覆蓋在ρ型半導體層2丨4上，再於广= 環&下進行退火步驟’以將此含鈦材料薄膜轉變成鈦氣1 合物層’其中所形成之鈦氮化合物層即為ρ型透明接觸芦 21 6。、在本發明之較佳實施例中，含鈦材料薄膜之材質^ 例如為鈦金屬、敛鋅合金、或鈦鈹合金等。如此一來、，銲氮氣，境下之退火步驟後，即可形成由氮化鈦相關材例如氮化鈦、鈦氮鋅化合物、或鈦氮鈹化合物，所成 P型透明接觸層216。在退火步驟期間，反應溫度較佳，制在介於5 0 C至1 〇〇〇°C之間，更佳則係控制在介於^二至 70 0°C 之間。、1249255 V. DESCRIPTION OF THE INVENTION (6) ^------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------ The type semiconductor layer 2 0 6 is in contact. In the patterning step </ RTI> of the light-emitting diode 2 〇 , in order to ensure that the N-type semiconductor layer 20 6 is exposed after the patterning step, over-etching is usually employed. In this way, in a patterning step, part of the N-type semiconductor layer 2 is also removed; this is shown in FIG. s ' Μ Subsequently, a titanium material film (not shown) is used to cover the p-type semiconductor layer 2 丨 4 by means of electroplating, electroless plating or deposition, and then an annealing step is performed under the wide ring & The titanium-containing compound film is converted into a titanium gas compound layer, and the titanium nitride compound layer formed therein is a p-type transparent contact reed 21 6 . In a preferred embodiment of the present invention, the material of the titanium-containing material film is, for example, a titanium metal, a zinc-absorbing alloy, or a titanium-niobium alloy. In this way, after the annealing step under the condition of welding nitrogen gas, a P-type transparent contact layer 216 formed of a titanium nitride-related material such as titanium nitride, a titanium-zinc-zinc compound or a titanium-titanium nitride compound can be formed. During the annealing step, the reaction temperature is preferably between 50 C and 1 〇〇 C ° C, more preferably between 2 and 70 ° C. ,

本發明之一特徵就是利用氮化鈦相關材料來作為p 接觸層21 6之材料，而由於氮化鈦相關材料除了罝優良之歐姆金屬接觸特性與透明度外，更具有極、佳^^埶虽定性。因此，藉由氮化鈦相關材料的應用，可 ^ 型透明接觸層2 1 6之熱穩定性。 Χ σ Ρ型透明接觸層216形成後，可分別於Ν型半導體層2〇6之One of the features of the present invention is to use a titanium nitride-related material as the material of the p-contact layer 216, and since the titanium nitride-related material has excellent ohmic metal contact characteristics and transparency, it is extremely excellent. Qualitative. Therefore, the thermal stability of the transparent contact layer 2 16 can be achieved by the application of the titanium nitride-related material. After the Χ σ Ρ type transparent contact layer 216 is formed, it can be respectively formed on the Ν type semiconductor layer 2 〇 6

Π49255 五、發明說明（7) p型電極: ί 1型-透/月接觸層216上製作_電極22 0與形成之結構'如第2圖所示。盆中200的製作’所 220之材質均係由氮化鈦相關材料所構電：21巧N型電極相關U、„、，仰開何科所構成，且此一氮化鈦物等2較佳可為氮化鈦、鈦氮鋅化合物、或鈦氮鈹化合 /金層堆Λ而構言，你ιΡΓ，極218較佳可為氣化欽相關材料層且、、、°構例如氮化鈦層/金層，而Ν型電極2 2 0較佳最^ =化鈦相關材料層/紹泠—銅層/氮化鈦相關材料層堆 :二i，例如氮化鈦層/紹—石夕-銅層/氮化鈦層。在本發明 f較佳實施例中，製作ρ型電極218或Ν型電極22〇之氮化目關材料時’係先利用例如電鍍沉積的方式於ρ型透明 f觸層_216或難半導體層2 0 6之暴露部分上形成含鈦薄膜、、會示）’再於氮氣環境下對含鈦薄膜進行退火步驟，藉以使此含鈦薄膜轉變成鈦氮化合物層。在本發明中，此含欽薄膜之材質較佳可為鈦金屬、鈦辞合金、或鈦鈹合金。進行含欽薄膜之退火步驟時，反應溫度較佳是控制在介於 5 0 C至1 0 0 〇°C之間，更佳則係控制在介於3 〇〇°c至7 〇〇°C之間0 本發明之另一特徵就是ρ型電極2 1 8與N型電極2 2 0採用氮化鈦相關材料為主要之材料，由於氮化鈦相關材料除了具有優良之歐姆接觸與透明特性外，並具有極佳之熱穩定性。因此，可有效提高發光二極體2 〇〇之熱穩定度。由上述本發明較佳實施例可知，本發明之一優點就是因為本發明之氮化物發光二極體的ρ型透明接觸層與ρ型電極之Π 49255 V. INSTRUCTION DESCRIPTION (7) p-type electrode: ί 1 type-transparent/month contact layer 216 is formed with _electrode 22 0 and a structure formed as shown in Fig. 2. The material of the 220 in the pot is made of titanium nitride related materials: 21 Q-shaped N-electrode related U, „,, Yang Kai Heke, and this titanium nitride 2 Jiake is a structure of titanium nitride, titanium-zinc-zinc compound, or titanium-titanium-bismuth compound/gold layer stack. You can use it as a gasification-related material layer, and Titanium layer/gold layer, and tantalum electrode 2 2 0 is the best ^= Titanium related material layer/Shaoyu-Copper layer/Titanium nitride related material layer stack: II, such as titanium nitride layer/Shao-shi In the preferred embodiment of the present invention, when the p-type electrode 218 or the tantalum electrode 22 is nitrided, the material is first deposited by, for example, electroplating. Forming a titanium-containing film on the exposed portion of the transparent f-contact layer 216 or the hard-working semiconductor layer 206, and then performing an annealing step on the titanium-containing film in a nitrogen atmosphere, thereby converting the titanium-containing film into titanium nitrogen In the present invention, the material of the film containing the chin is preferably a titanium metal, a titanium alloy, or a titanium ruthenium alloy. In the case of a sudden change, the reaction temperature is preferably controlled between 50 C and 100 ° C, and more preferably between 3 〇〇 ° c and 7 〇〇 ° C. A feature is that the p-type electrode 2 18 and the N-type electrode 2 2 0 are mainly made of a titanium nitride-related material, and the titanium nitride-related material has excellent heat in addition to excellent ohmic contact and transparency characteristics. Therefore, the thermal stability of the light-emitting diode 2 can be effectively improved. As is apparent from the above preferred embodiments of the present invention, one of the advantages of the present invention is that the p-type transparent of the nitride light-emitting diode of the present invention Contact layer and p-type electrode

第15頁 1249255 五、發明說明（8) -- 材質係採用敗化欽相關材料，除了可提供良好之歐姆接觸與透明特性’更提供了極佳之熱穩定性。目此，可達到提升發光二極體元件之熱穩定性的目的。 ^述本發明較佳實施例可#，本發明之又一優點就是因為本赉明採用氮化鈦相關材料來製作氮化物發光二極體之 N型電極與p型電極。由於氮化鈦相關材料除了可使賭電極與[電極達到良好之歐姆接觸以外，更具有相當優異之熱穩定性。因此，可改善發光二極體元件之熱穩定性、，而提升發光一極體元件之操作性能，進而達到有效延長發光二極體元件之使用壽命的目的。Page 15 1249255 V. INSTRUCTIONS (8) -- The material is made of sin-like materials, which provide excellent thermal stability, in addition to providing good ohmic contact and transparency. For this reason, the purpose of improving the thermal stability of the light-emitting diode element can be achieved. According to a preferred embodiment of the present invention, another advantage of the present invention is that the N-type electrode and the p-type electrode of the nitride light-emitting diode are fabricated by using a titanium nitride-related material. Since the titanium nitride-related material can make the bet electrode and the electrode achieve good ohmic contact, it has quite excellent thermal stability. Therefore, the thermal stability of the light-emitting diode element can be improved, and the operational performance of the light-emitting diode element can be improved, thereby achieving the purpose of effectively extending the service life of the light-emitting diode element.

雖然本發明已以一較佳實施例揭露如上，然其並非用以限 ^本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and various modifications and changes may be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

第16頁 1249255 圖式簡單說明【圖式簡單說明】第1圖係繪示傳統發光二極體之剖面圖。第2圖係繪 '示依照本發明一較佳實施例的一種發光二極體之剖面圖。【元件代表符號簡單說明】 100 發光二極體 102 透明基板 104 緩衝層 106 N型半導體層 108 N型侷限層 110 發光層 112 P型侷限層 114 P型半導體層 116 P型透明接觸層 118 P型電極 120 N型電極 200 發光二極體 202 透明基板 204 緩衝層 206 N型半導體層 208 N型侷限層 210 發光層 212 P型侷限層 214 P型半導體層 216 P型透明接觸層 218 P型電極 220 N型電極Page 16 1249255 Brief description of the drawing [Simple description of the drawing] Fig. 1 is a sectional view showing a conventional light-emitting diode. Figure 2 is a cross-sectional view showing a light emitting diode in accordance with a preferred embodiment of the present invention. [Simplified Description of Component Symbols] 100 Light Emitting Diode 102 Transparent Substrate 104 Buffer Layer 106 N-Type Semiconductor Layer 108 N-Type Confined Layer 110 Light Emitting Layer 112 P-Type Confined Layer 114 P-Type Semiconductor Layer 116 P-Type Transparent Contact Layer 118 P Type Electrode 120 N-type electrode 200 Light-emitting diode 202 Transparent substrate 204 Buffer layer 206 N-type semiconductor layer 208 N-type confinement layer 210 Light-emitting layer 212 P-type confinement layer 214 P-type semiconductor layer 216 P-type transparent contact layer 218 P-type electrode 220 N-type electrode

第17頁Page 17

Claims

1249255 六、申請專利範圍 1 · 一種氮化物發光一透明基板；二極體，至少包括 N型半導體層位於該透明基板上；一發光磊晶結構位於部分之該N型半導體層上，且暴露出另一部分之該N型半導體層； P型半導體層位於該發光磊晶結構上；一 P型透明接觸層位於該p型半導體層上；一 N型電極位於該N型半導體層之暴露部分上，其中該罐電極至少包括依序堆疊之一第一氮化鈦（T丨N)相關材料1249255 VI. Patent Application No. 1 · A nitride-emitting transparent substrate; a diode comprising at least an N-type semiconductor layer on the transparent substrate; a luminescent epitaxial structure on a portion of the N-type semiconductor layer, and exposed Another portion of the N-type semiconductor layer; the P-type semiconductor layer is on the luminescent epitaxial structure; a P-type transparent contact layer is on the p-type semiconductor layer; an N-type electrode is located on the exposed portion of the N-type semiconductor layer, Wherein the can electrode comprises at least one of the first titanium nitride (T丨N) related materials stacked in sequence

層、一銘-石夕-銅（A 丨—Si—Cu)材料層、以及一第二氮化鈦相關材料層；以及一 P型電極位部分之該p型透明接觸層上，其中該P型電極至少包括一第三氮化鈦相關材料層。 2 ·如申請專利範圍第1項所述之氮化物發光二極體，其中該透明基板之材質為藍寶石。 3 ·如申請專利範圍第1項所述之氮化物發光二極體，其中該N型半導體層之材質為n型氮化鎵（GaN)。 4·如申請專利範圍第1項所述之氮化物發光二極體，其中该發光蟲晶結構至少包括依序堆疊之一 N型侷限層、一發光層、以及一 P型侷限層，且該N型侷限層與該n型半導體層接合。a layer, a first-stone-copper (A 丨-Si-Cu) material layer, and a second titanium nitride-related material layer; and a p-type electrode portion of the p-type transparent contact layer, wherein the P The type electrode includes at least a third layer of titanium nitride-related material. 2. The nitride light-emitting diode according to claim 1, wherein the transparent substrate is made of sapphire. 3. The nitride light-emitting diode according to claim 1, wherein the material of the N-type semiconductor layer is n-type gallium nitride (GaN). 4. The nitride light-emitting diode according to claim 1, wherein the light-emitting crystal structure comprises at least one of an N-type confinement layer, a light-emitting layer, and a P-type confinement layer. An N-type confinement layer is bonded to the n-type semiconductor layer.

第18頁 1249255 六、申請專利範圍極體，其中 5 -如申請專利範圍第4項所述之氮化物該發光層係一多重量子井（MQW)結構。 6 ·如申請專利範圍第1項所述之氮化物發光二極體，其中該P型半導體層之材質為P型氮化鎵。 7. 如申請專利範圍第1項所述之氮化物發光二極體，其中該P型透明接觸層之材質為氮化鈦相關材料。 8. 如申請專利範圍第1項所述之氮化物發光二極體，其中該P型透明接觸層之材質係選自於由氮化鈦、鈦氮鋅化合物、以及鈦氮鈹化合物所組成之一族群。 9. 如申請專利範圍第1項所述之氮化物發光二極體，其中該N型電極之該第一氮化鈦相關材料層與該第二氮化鈦相關材料層之材質係選自於由氮化鈦、鈦氮辞化合物 (T i Ν Ζ η )、以及鈦氮鈹化合物（T i N B e )所組成之一族群。 1 0.如申請專利範圍第1項所述之氮化物發光二極體，其中該P型電極之該第三氮化鈦相關材料層之材質係選自於由氮化鈦、鈦氮鋅化合物 '以及鈦氮鈹化合物所組成之一族群。Page 18 1249255 VI. Patent Application Range, 5 - The nitride as described in claim 4, the luminescent layer is a multiple quantum well (MQW) structure. 6. The nitride light-emitting diode according to claim 1, wherein the material of the P-type semiconductor layer is P-type gallium nitride. 7. The nitride light-emitting diode according to claim 1, wherein the material of the P-type transparent contact layer is a titanium nitride-related material. 8. The nitride light-emitting diode according to claim 1, wherein the material of the P-type transparent contact layer is selected from the group consisting of titanium nitride, a titanium-zinc-zinc compound, and a titanium-niobium compound. a group of people. 9. The nitride light-emitting diode according to claim 1, wherein the material of the first titanium nitride-related material layer and the second titanium nitride-related material layer of the N-type electrode is selected from A group consisting of titanium nitride, a titanium nitride compound (T i Ν Ζ η ), and a titanium arsenide compound (T i NB e ). The nitride light-emitting diode according to claim 1, wherein the material of the third titanium nitride-related material layer of the P-type electrode is selected from the group consisting of titanium nitride and titanium zinc nitride compound. 'and a group of titanium arsenide compounds.

第19頁 1249255 六、申請專利範圍 1 1 .如申請專利範圍第1項所述之氮化物發光二極體，其中該P型電極係由該第三氮化鈦相關材料層/一金層所構成。 ' 1 2 ·如申請專利範圍第1項所述之氮化物發光二極體，更至少包括一緩衝層位於該N型半導體層與該透明基板之 ’ 間。 13. —種氮化物發光二極體，至少包括：一透明基板；一 N型半導體層位於該透明基板上； .1 一發光磊晶結構位於部分之該N型半導體層上，且暴露出另一部分之該N型半導體層；一 P型半導體層位於該發光磊晶結構上；一 P型透明接觸層位於該P型半導體層上；一 N型電極位於該N型半導體層之暴露部分上；以及一 P型電極位於部分之該P型透明接觸層上，其中該N型電極與該P型電極之材質至少包括一氮化鈦相關材料。 14. 如申請專利範圍第13項所述之氮化物發光二極體，其 φ 中該透明基板之材質為藍寶石。 1 5 .如申請專利範圍第1 3項所述之氮化物發光二極體，其中該N型半導體層之材質為N型氮化鎵。</ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Composition. The nitride light-emitting diode according to claim 1, further comprising at least a buffer layer between the N-type semiconductor layer and the transparent substrate. 13. A nitride light-emitting diode comprising: at least: a transparent substrate; an N-type semiconductor layer on the transparent substrate; .1 a light-emitting epitaxial structure on a portion of the N-type semiconductor layer, and exposing another a part of the N-type semiconductor layer; a P-type semiconductor layer is located on the luminescent epitaxial structure; a P-type transparent contact layer is located on the P-type semiconductor layer; an N-type electrode is located on the exposed portion of the N-type semiconductor layer; And a P-type electrode is located on a portion of the P-type transparent contact layer, wherein the material of the N-type electrode and the P-type electrode comprises at least a titanium nitride-related material. 14. The nitride light-emitting diode according to claim 13, wherein the transparent substrate is made of sapphire. The nitride light-emitting diode according to claim 13 wherein the material of the N-type semiconductor layer is N-type gallium nitride.

第20頁 1249255 ^-----------——----- 六、申請專利範圍 1 6 ·如申請專利範圍第1 3項所述之氮化物發光二極體，其中該發光磊晶結構至少包括依序堆疊之一 N型侷限層、一發光層、以及一 P型侷限層，且該N型侷限層與該N型半導體層接合。 1 7 ·如申請專利範圍第丨6項所述之氮化物發光二極體，其中該發光層係一多重量子井結構。 1 8 ·如申請專利範圍第丨3項所述之氮化物發光二極體，其中該P型半導體層之材質為p裂氮化鎵。 1 9 ·如申請專利範圍第丨3項所述之氮化物發光二極體，其中該P型透明接觸層為一氮化鈦相關材料層。 2 0 ·如申請專利範圍第1 3項所述之氮化物發光二極體，其中該P型透明接觸層之材質係選自於由氮化鈦、鈦氮鋅化合物、以及鈦氮鈹化合物所組成之一族群。 2 1 ·如申請專利範圍第1 3項所述之氮化物發光二極體，其中為氮化鈦相關材料係選自於由氮化鈦、鈇氮鋅化合物、以及鈦氮鈹化合物所組成之一族群。 2 2 ·如申請專利範園第1 3項所述之氮化物發光二極體，其Page 20 1249255 ^-----------——----- VI. Patent Application Range 1 6 · The nitride light-emitting diode according to item 13 of the patent application scope, wherein The luminescent epitaxial structure includes at least one N-type confinement layer, a luminescent layer, and a P-type confinement layer stacked in sequence, and the N-type confinement layer is bonded to the N-type semiconductor layer. The nitride light-emitting diode according to claim 6, wherein the light-emitting layer is a multiple quantum well structure. The nitride light-emitting diode according to claim 3, wherein the material of the P-type semiconductor layer is p-cracked gallium nitride. The nitride light-emitting diode according to claim 3, wherein the P-type transparent contact layer is a titanium nitride-related material layer. The nitride light-emitting diode according to claim 13 wherein the material of the P-type transparent contact layer is selected from the group consisting of titanium nitride, titanium zinc nitride compound, and titanium arsenide compound. Form a group of people. The nitride light-emitting diode according to claim 13 wherein the titanium nitride-related material is selected from the group consisting of titanium nitride, lanthanum zinc compound, and titanium arsenide compound. a group of people. 2 2 · The nitride light-emitting diode according to claim 13 of the patent application garden,

1249255 申請專利範圍 t該P型電極係一氮化鈦相關材料層/金層結構 2 3 ·如申請專利範圍第1 3項所述之氮化物發光二極體，其中该N型電極係一氮化鈦相關材料層/鋁-石夕_銅層/氮化鈦相關材料層結構。 2 4 · 一種氮化物發光二極體之製造方法，至少包括：形成一 N型半導體層於一透明基板；形成一發光磊晶結構於部分之該N型半導體層上，並暴露出另一部分之該N型半導體層；形成一 P型半導體層於該發光磊晶結構上；形成一 P型透明接觸層於該p型半導體層上；形成一 N型電極於該n型半導體層之暴露部分上；以及形成一 P型電極於部分之該p型透明接觸層上，其中該N型電極與該P型電極之材質至少包括一氮化鈦相關材料。 2 5 ·如申請專利範圍第2 4項所述之氮化物發光二極體之製造方法’其中該透明基板之材質為藍寶石。 2 6 ·如申請專利範圍第2 4項所述之氮化物發光二極體之製一造方法，其中該N型半導體層之材質為N型氮化鎵。 2 7 ·如申請專利範圍第2 4項所述之氮化物發光二極體之製造方法，其中該發光磊晶結構至少包括依序堆疊之一 N型Patent application No. 1249255, the P-type electrode is a titanium nitride-related material layer/gold layer structure, and the nitride-emitting diode according to the above-mentioned claim, wherein the N-type electrode is a nitrogen Titanium-related material layer/aluminum-shixi_copper layer/titanium nitride related material layer structure. A method for fabricating a nitride light-emitting diode, comprising: forming an N-type semiconductor layer on a transparent substrate; forming a light-emitting epitaxial structure on a portion of the N-type semiconductor layer, and exposing another portion Forming a P-type semiconductor layer on the luminescent epitaxial structure; forming a P-type transparent contact layer on the p-type semiconductor layer; forming an N-type electrode on the exposed portion of the n-type semiconductor layer And forming a P-type electrode on the portion of the p-type transparent contact layer, wherein the material of the N-type electrode and the P-type electrode comprises at least a titanium nitride-related material. The method for producing a nitride light-emitting diode according to claim 24, wherein the transparent substrate is made of sapphire. The method for fabricating a nitride light-emitting diode according to claim 24, wherein the material of the N-type semiconductor layer is N-type gallium nitride. The method of manufacturing a nitride light-emitting diode according to claim 24, wherein the light-emitting epitaxial structure comprises at least one of N-type stacked in sequence

第22頁 1249255 六、申請專利範圍侷限層、一發光層、以及一 P型侷限層，且該N型侷限層與該N型半導體層接合。 \ 2 8 .如申請專利範圍第2 7項所述之氮化物發光二極體之製造方法，其中該發光層係一多重量子井結構。 2 9 .如申請專利範圍第2 4項所述之氮化物發光二極體之製造方法，其中該P型半導體層之材質為P型氮化鎵。 3 0.如申請專利範圍第24項所述之氮化物發光二極體之製造方法，其中該P型透明接觸層為一氮化鈦相關材料層。 3 1.如申請專利範圍第2 4項所述之氮化物發光二極體之製造方法，其中形成該P型透明接觸層之步驟至少包括：形成一含鈦薄膜；以及於一氮氣環境下進行一退火步驟，以將該含鈦薄膜轉變成一欽氮化合物層。 3 2 .如申請專利範圍第3 1項所述之氮化物發光二極體之製造方法，其中該退火步驟之一溫度介於5 0°C至1 0 0 0°C之間。 3 3 .如申請專利範圍第3 1項所述之氮化物發光二極體之製造方法，其中該退火步驟之一溫度介於3 0 0°C至7 0 0°C之Page 22 1249255 VI. Patent Application Scope A layer, a luminescent layer, and a P-type confinement layer, and the N-type confinement layer is bonded to the N-type semiconductor layer. The method of manufacturing a nitride light-emitting diode according to the above-mentioned claim, wherein the light-emitting layer is a multiple quantum well structure. The method of manufacturing a nitride light-emitting diode according to claim 24, wherein the material of the P-type semiconductor layer is P-type gallium nitride. The method for producing a nitride light-emitting diode according to claim 24, wherein the P-type transparent contact layer is a titanium nitride-related material layer. 3. The method for producing a nitride light-emitting diode according to claim 24, wherein the step of forming the P-type transparent contact layer comprises at least: forming a titanium-containing film; and performing under a nitrogen atmosphere An annealing step to convert the titanium-containing film into a layer of a nitrogen compound. The method of manufacturing a nitride light-emitting diode according to claim 31, wherein a temperature of one of the annealing steps is between 50 ° C and 1 0 0 ° C. 3 . The method for manufacturing a nitride light-emitting diode according to claim 31, wherein one of the annealing steps has a temperature between 300 ° C and 700 ° C.

第23頁 1249255 六、申請專利範圍間。 3 4 ·如申請專利範圍第3 1項所述之氮化物發光二極體之製造方法，其中該含鈦薄膜之材質係選自於鈦金屬、鈦鋅合金、以及鈦鈹合金所組成之一族群。 3 5 ·如申請專利範圍第3 1項所述之氮化物發光二極體之製造方法，其中該P型透明接觸層之材質係選自於由氮化鈦、欽氮鋅化合物、以及鈦氮鈹化合物所組成之一族群。 3 6 .如申請專利範圍第2 4項所述之氮化物發光二極體之製造方法，其中形成該N型電極與該P型電極之該氮化鈦相關材料時，至少包括：形成一含鈦薄膜；以及於一氮氣環境下進行一退火步驟，以將該含鈦薄膜轉變成一鈦氮化合物層。 Φ 3 7.如申請專利範圍第3 6項所述之氮化物發光二極體之製造方法，其中該退火步驟之一溫度介於5 0°C至1 0 0 0°C之間。 3 8 .如申請專利範圍第3 6項所述之氮化物發光二極體之製造方法，其中該退火步驟之一溫度介於3 0 0°C至7 0 0°C之間。Page 23 1249255 VI. Scope of application for patents. The method for manufacturing a nitride light-emitting diode according to the invention of claim 3, wherein the material of the titanium-containing film is selected from the group consisting of titanium metal, titanium-zinc alloy, and titanium-rhenium alloy. Ethnic group. The method for producing a nitride light-emitting diode according to claim 3, wherein the material of the P-type transparent contact layer is selected from the group consisting of titanium nitride, zinc cadmium compound, and titanium nitrogen. A group of compounds consisting of ruthenium compounds. The method for manufacturing a nitride light-emitting diode according to the invention of claim 24, wherein the forming the N-type electrode and the P-type electrode of the titanium nitride-related material comprises at least: forming a a titanium film; and an annealing step under a nitrogen atmosphere to convert the titanium-containing film into a titanium nitride compound layer. Φ 3 7. The method for producing a nitride light-emitting diode according to claim 36, wherein a temperature of one of the annealing steps is between 50 ° C and 1 0 0 ° C. The method of manufacturing a nitride light-emitting diode according to claim 36, wherein a temperature of one of the annealing steps is between 300 ° C and 700 ° C.

第24頁 1249255 六、申請專利範圍 39·如中請專利範圍第36項所述之氮化物發光二極體之製造方法，其中該含鈦薄膜之材質係選自於鈦金屬、鈦鋅合金、以及鈦鈹合金所組成之，族群。 4 0 ·如申請專利範圍第3 6項所述之氮化物發光二極體之製造方法，其中該N型電極與該P犁電極之该氮化鈦相關材料係選自於由氮化鈦、鈥氮鋅化合物、以及鈦氮鈹化合物所組成之一族群。 4 1 ·如申請專利範圍第24項所述之氮化物發光二極體之製造方法，其中形成該P型電極之步驟至少包括形成依序堆疊之一金層與一氮化鈦相關材料層。 42·如申請專利範圍第24項所述之氮化物發光二極體之製造方法，其中形成該N型電極之步驟至少包括形成依序堆疊之一第一氮化欽相關材料層、一銘-石夕-銅層以及一第-氮化鈦相關材料層。 ~ 鬱The invention relates to a method for manufacturing a nitride light-emitting diode according to the invention, wherein the material of the titanium-containing film is selected from the group consisting of titanium metal, titanium zinc alloy, And the group consisting of titanium-niobium alloys. The method for manufacturing a nitride light-emitting diode according to the third aspect of the invention, wherein the N-type electrode and the titanium nitride-related material of the P-pile electrode are selected from titanium nitride, A group consisting of a cerium nitrogen zinc compound and a titanium arsenide compound. The method of manufacturing a nitride light-emitting diode according to claim 24, wherein the step of forming the P-type electrode comprises at least forming a gold layer and a titanium nitride-related material layer which are sequentially stacked. 42. The method of manufacturing a nitride light-emitting diode according to claim 24, wherein the step of forming the N-type electrode comprises at least forming a layer of the first nitride-related material layer, one inscription - Shixi-copper layer and a layer of titanium-titanium nitride related material. ~ Yu

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