TWI248627B - Field emission display with four-electrode structure and the manufacturing method thereof - Google Patents

Abstract

The present invention relates to a field emission display with four-electrode structure and the manufacturing method thereof, which is to set up a mesh between the anode plate and the cathode plate, and the mesh is configured with a gate layer and a converging electrode layer, and separated with an insulation layer to form an independent sandwich structure, and the mesh is configured with a plurality of through-holes, and each through-hole is corresponding to each set of cathode and anode units; the mesh and the anode plate employs a glass plate as spacer, and the converging electrode layer of the mesh is facing the anode plate, such that the electron beam emitted from the electron emission source could limit the divergence scale with the converging electrode to make the electron beam precisely impinging on the corresponding anode area.

Description

12486271248627

【發明所屬之技術領域】 本發明係有關一種場發射顯示器之結構及其製造方法， 尤指一種在習知三極（陰極、陽極及閘極）結構中增設第四 極（即收斂極），且以玻璃板做為支撐器之場發射顯示器。 近年來，平面顯示器（Flat Panel Display，FPD)在市 %上蔚為風潮，各種類型之平片顯示器遂不斷在市場上出 現:^括有場發射顯示器（FED)、液晶顯示器（LCD)、電漿 顯不器（PDP)、有機發光二極體顯示器（〇LED)等等。輕與 薄是該種平面顯示器的共同特點，而依照各種平面顯工示器 不同特|·生（如尺寸及凴度等），有些適合應用於小尺寸面 板，如手機及個人數位助理（PDA);有些則適合應用於 中大i尺寸如電腦、電視等；或應用於超大型尺寸如室 外看板。各種平面顯示器技術之發展，其目的均是希望能 達到兼具高畫質、A晝面、低成本及使用壽命長等特性。 一其中所謂的場發射顯示器是近年來新興的平面顯示器之 一，其原因在其具有自體發光的效果，無需另外使用背光 光源、，較諸LCD，除有較佳的亮度表現外，再加上更寬廣 的可視角度範圍、耗電量低、反應速度快（不留殘影）及 作溫度較廣等優點，且其所呈現之影像晝質非常近似於 ，的陰極射線管（CRT)顯示器，而其體積卻遠較陰極射線 管輕、薄，故場發射顯示器成為取代液晶顯示器及電漿 示器的明日之星實為指日可待之事。更由於近年來奈米技[Technical Field] The present invention relates to a structure of a field emission display and a method of fabricating the same, and more particularly to a fourth pole (ie, a convergence pole) added to a conventional three-pole (cathode, anode, and gate) structure. And the glass plate is used as a field emission display for the support. In recent years, flat panel displays (FPDs) have become a trend in the market. Various types of flat-panel displays are constantly appearing on the market: including field emission displays (FEDs), liquid crystal displays (LCDs), and electricity. Pulp display (PDP), organic light emitting diode display (〇LED) and so on. Lightness and thinness are common features of this kind of flat panel display, and according to various flat display display devices, some are suitable for small-sized panels, such as mobile phones and personal digital assistants (PDAs). ); some are suitable for medium and large i sizes such as computers, televisions, etc.; or for very large sizes such as outdoor billboards. The development of various flat panel display technologies is aimed at achieving the characteristics of high image quality, A surface, low cost and long service life. One of the so-called field emission displays is one of the emerging flat-panel displays in recent years, because of its self-illuminating effect, without the need to additionally use a backlight source, and in addition to the better brightness performance of the LCD, plus A wider range of viewing angles, low power consumption, fast response (no residual image retention), and a wide temperature range, and the image enamel is very similar to that of a cathode ray tube (CRT) display. However, its volume is much lighter and thinner than that of cathode ray tubes, so the field emission display has become a star of tomorrow's replacement for liquid crystal displays and plasma displays. More in recent years, nanotechnology

第5頁 五、發明說明（2) 術之l速發展將奈米材料應用於場發射顯示哭中，勢將 更形促進其發展為成熟商品。 τ 努將 第一圖所不者係為一種習知之三極場發射顯示器，其結 構主要係包含陽極板（10)與陰極板（2〇)， ^ 二 設置有支撐器，提供為么： 與陰極板⑵）之間之支擇，該陽極板⑴）係包含=(極= 板(⑴二陽極導電層(12)* —螢光粉體層(ph〇sph〇rs layer)(13)，而該陰極板（2〇)則包含一陰極基板、一 ί ft 一電子發射源層(23)、-介電層(24)及 甲1極層（25)，其中該閘極層（25)係被提供—電位差以沒 引電子發射源層（23)之電子射出，藉由陽極導電層（12)所 提供之南電壓’以提供電子束之加速，俾使電子有足夠的 動能撞擊（1DiPinge)陽極板（1〇)上之螢光粉體層（1 而使其發光。據此’為了使電子在場發射顯示器中㈣， 需以真空没備將顯示器保持至少1〇_5托（t〇r幻以下之直介 度，使電子獲得一良好的平均自由動徑（inean free )，同時應避免電子發射源和螢光粉區的污染及毒化。 ^為使電子有足夠能量去撞擊螢光粉，&在兩板間需有 適虽間隙，使電子有足夠的加速空間來撞擊螢光粉 到使螢光粉體能充分產生發光效應。 _ 習知之電子發射源層之結構多以一種尖端結構（如第一 圖所示），或是一種Spindt Type(見於應用物理學報 (Journal of Applied Physical 968年六月第39卷第七號 1248627 93inR?ifi 五、發明說明（3) 。之十h : 1 ί 發射陰極」（A Thin-Fi lm Field-Emission 』Y #插文+’或美國專利第3665 24 1號及第3 75 5704號 ί 乂’：二構係以薄膜製程或微影製程製作成尖端態 薄膜製程之不斷發展，各種包含Spindt Γ二 顯示器結構不斷地被改良及提出，該種藉由 η广及引電子之方式往往導引出電子束路徑呈現- ^敉之曲線，因此在該種習知之場發射顯示器結構設 t夕：力口入各種型態之控制電極，以修正電子束之截面大 二，，導引於正確路徑以使電子束可準確撞擊螢光粉之正 位置因此、纟σ構上除仍考慮電子發射源之尖端結構設 ί t結合各種控制電極之設置，多以薄膜、微影或微機 =製程之繁複結構及製程方法加以製造，也多可引用為微 、電結構内之一單元，不過就大型顯示器領域之需求，雖 該種結構基礎下之場發射顯示器自丨9 6 0年代發展迄今，由 於4種t構及製程越趨複雜，難以達成經濟效益及量產標 =，且其所搭配之控制電路亦更加繁複，造成製造成本過 咼，至今仍難以使此類產品之達到量產化及市場化之需 求。 近年來一種新的奈米碳管材料（carbonnanotube)自 1 9 9 1年被I i j i ma提出後（1 g g 1年之自然（na 士ur e )雜言志），由 於該材料具有高長寬比（aspect ratio)、高機械強度、不 易被毒化（high chemical resistance)、不易磨耗、低啟 閘電場（threshold electric field)等特性，已成為一種 场舍射電子源（field emission electrons)之材料，被廣Page 5 V. Description of the invention (2) The rapid development of the technique applies the nano material to the field emission display to cry, which will further promote its development into a mature commodity. τ Nu is not the first figure as a conventional three-pole field emission display, its structure mainly includes anode plate (10) and cathode plate (2〇), ^ two are provided with a support, provide: Between the cathode plates (2)), the anode plate (1)) comprises = (pole = plate ((1) two anode conductive layer (12) * - ph〇sph〇rs layer (13), The cathode plate (2〇) comprises a cathode substrate, an electron emission source layer (23), a dielectric layer (24) and a first layer (25), wherein the gate layer (25) Is provided - the potential difference is not induced by the electron emission source layer (23) electrons, the south voltage ' provided by the anode conductive layer (12) to provide acceleration of the electron beam, so that the electron has sufficient kinetic energy impact (1DiPinge The phosphor powder layer on the anode plate (1 〇) is used to illuminate it. According to this, in order to make the electrons in the field emission display (4), it is necessary to keep the display at least 1 〇 5 Torr in vacuum. The directness of the 幻r illusion allows the electron to obtain a good mean free path (inean free), while avoiding contamination of the electron emission source and the phosphor particle area. Dyeing and poisoning. ^ In order to make the electrons have enough energy to hit the fluorescent powder, & there should be a suitable gap between the two plates, so that the electrons have enough acceleration space to hit the fluorescent powder to make the fluorescent powder fully produced. Luminescence effect. _ The structure of the electron emission source layer is known as a tip structure (as shown in the first figure) or a Spindt Type (see Journal of Applied Physics 1968, Volume 39, seventh). No. 1248627 93inR?ifi V. Inventive Note (3). Tenth H: 1 ί Atom-Emission 』Y #Box+' or US Patent No. 3665 24 1 and 3 75 No. 5704 ί 乂 ': The two-system is continuously developed with a thin film process or a lithography process to produce a state-of-the-art film process. Various Spindt Γ2 display structures have been continuously improved and proposed, which are based on η 广 and 电子The method often leads to the electron beam path presenting a curve of ^敉, so in this kind of conventional field, the display structure of the display is set to t: the force is introduced into various types of control electrodes to correct the cross section of the electron beam, Lead to the correct path The electron beam can accurately hit the positive position of the phosphor powder. Therefore, the structure of the 发射σ is still considered in combination with the tip structure of the electron emission source, and the setting of various control electrodes, mostly with the complicated structure of film, lithography or microcomputer=process and The manufacturing method can be used as a unit in the micro and electrical structure. However, in the field of large display, although the field emission display based on this structure has been developed since the 1960s, due to 4 kinds of t As the structure and process become more complex, it is difficult to achieve economic benefits and mass production standards =, and the control circuit with which it is matched is more complicated, resulting in excessive manufacturing costs. It is still difficult to mass-produce and market such products. demand. In recent years, a new carbon nanotube material (carbonnanotube) has been proposed by I iji ma since 1961 (1 gg 1 year of nature (na sul ur e), due to the material's high aspect ratio ( Aspect ratio), high mechanical strength, high chemical resistance, non-abrasive, low-resistance electric field, etc., have become a material for field emission electrons.

1248627 M 93WR91R 五、發明說明（4) Λ 曰 修正 (見1 995年之科學（ScienCe)雜諮）。其中所謂的 ele發射係利用一種施加於材料表面之高電場（high fleid)，將材料之能障壁（energy barrier)的 ]、，致使電子可藉由量子力學之通道效應 脱 mtumiechanicai tunneiung effect)，從材料表面 為自由電子（見前揭年之應用物理學報），因此 ，4黑發射的電流可藉由材料具有低工作函數之表面而提 3h -,,又，此電子產生方式係藉由對該材料施予一電場 無須對材料提⑻一定^原，因&這類#電子發射 ^姑並、&冷陰極（C〇1d Cath〇de)之稱。因此這類奈米碳管 二t應用於％發射顯示器陰極板之電子發射源。 出特性ίϊϋ?管材料仍ί續的被改良及應[電子射 厚膜，因此目耵該種等奈管碳管已可以一種 板印刷或喷塗印刷方式），直接將奈米碳管 圖騰化於陰極導雷展9、 可夂去沙V ^曰（22)上以形成電子發射源層（23)， 了多考我國專利公告第5〇2395號， 結構之場發射顯干哭a ΡΡ ^ 有效擺脫該種二極 種捭配太半if:又限於间成本之薄膜製程技術。而此 裡搭配奈未石反官之電子發射源之方式， 一種尚效率的電子射出（在電流 ^ 有 l 5V/ _，在雷山反iU W m2之啟始電場 1n A/ 在電琢2· 5V/ 之刼作電流密度可達 lOmA/cw)，其只需搭配一種低 違 佳之動晝顯示效果。但即便如=本^\動電路即可達成極 由複數之奈米碳管所構成，其所產生；c單”系 陰極與陽極之距離内，與尖端結構之電子發 在一定的 1248627 五、發明說明（5) 電子束類似，單元内所集合之各該奈米碳管所釋出之電子 束（2 6+) ’其截面愈接近陽極之路徑過程會愈向兩側發散， 即如第二圖所示。而隨著陰陽極之間隙加大，其電子束 (26)之戴面亦會相對變大，使得電子束（26)之截面大於陽 極2光粉體層（13)之發光區域，甚或擴散之電子束（26)有 可能擊發相鄰單元之螢光粉體層（1 3)，因而造成顯示器所 呈現^面之色純度不佳，或畫質解析度不良的現象，因此 ^陰陽極之單元結構在設計上為避免電子束之發散現象， 1知技術為此亦有提供一些解決對策。 其一係直接縮減陰極電子發射源對應於 (二之相對面積’或是陰極電子發射源層⑵)再加以= ^丄由複數個更小單元之電子發射源所構成，以期各單 ί:Π=3)所產生之電子束(26)截面可接近於陽極 被激發榮光粉體層(13)之區域面積，但該方式之設 ^導向在在使電子發射源層（23)面積縮小，電子產出效率 減低，或使對應之螢光粉俨厗r — # ^ 蛍尤枱體層（13)早兀面積減小，鄰近之 間隙加大’即使得晝面解析度降低。 間^一'可^ :=構中之閘極（25)與陰極導電層（22) 能外:、並；除作為電子汲取之功 得電=/效=m82i7但該種設計會使 畫面反應時間增加，降低設計複雜度提高， 1248627 曰 案號 9310fi21f) 五、發明說明（6) =上之電極可提供-收敛電壓或偏向 疋之％極螢光粉體層（13)之預定位置，铁 ^ 足大尺寸顯示器產品之量;頁光微驗，難以滿 (20另)：：三Ϊ結構以上之場發射顯示器陰極板 ” ％極板（10)之真空間隙維繫，係由一支撐哭 (邛80打）（14)或阻隔壁（：^13)為之，缺 - 20)間係處於一種非當栖颅认古士 .....陰％極板（10 ’ 玻璃妬-π二非 真空狀態，為防止該二大片 ，習用之支擇器多為玻璃球或十字長條形玻 ，或以其他長條狀物體來支撐。 以 著劑黏附於陰極板(20)及陽極板(10)，因：：；；上；； :過：附固著劑’然後再黏附在陽極板( 2、心 士，再經過一燒結製程以完 :射顯示器之晝面呈現需求，且不致影響 直外：ΪΪ::?7之規模大都介在Μ ^到“Ο ^之間， 難度= ’因此該結構在製程上便會有下述困 、製程繁複：由於習知之支撐哭 附或移載設備以佈植：樓器之要求精=即 相對b ’對位及施作之複雜及困難度相當高。 污染：由於習知支撐 上，其後必需再經力丄4;;:;在=極板(1〇，） 熟以進仃固者，使陰陽極板（10，20)1248627 M 93WR91R V. INSTRUCTIONS (4) Λ 修正 Amendment (see Science (ScienCe) in 1995). The so-called ele emission system utilizes a high fleid applied to the surface of the material to cause the energy barrier of the material to cause the electron to be removed from the mtumiechanicai tunneiung effect by the channel effect of quantum mechanics. The surface of the material is free electrons (see the Journal of Applied Physics of the previous year). Therefore, the current of the 4 black emission can be raised by the surface of the material having a low work function, and this electron generation method is The application of an electric field does not require the material to be (8) a certain amount, because &#; such electron emission ^ 并, & cold cathode (C 〇 1d Cath 〇 de). Therefore, such carbon nanotubes are applied to the electron emission source of the cathode plate of the % emission display. The characteristics of the material 仍 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管 管In the cathode guided lightning exhibition 9, can be removed from the sand V ^ 曰 (22) to form an electron emission source layer (23), the multi-test China Patent Bulletin No. 5 〇 2395, the field of the structure launches a dry cry a ΡΡ ^ Effectively get rid of this kind of two-pole type with too much if: is limited to the film process technology of the cost. Here, in the way of the electron emission source of Naiweishi anti-official, an efficient electron emission (in the current ^ has l 5V / _, in the Leishan anti-iU W m2 starting electric field 1n A / in the electric 琢 2 · 5V / The current density can reach lOmA/cw), which only needs to match the display effect of a low-contrast. But even if the = ^ ^ ^ circuit can be achieved by a complex number of carbon nanotubes, which is produced; c single" is within the distance between the cathode and the anode, and the electrons of the tip structure are issued at a certain 1248627 DESCRIPTION OF THE INVENTION (5) The electron beam is similar, and the electron beam (2 6+) released by each of the carbon nanotubes collected in the unit has a cross-section closer to the anode, which is more divergent to the sides, that is, As shown in the second figure, as the gap between the anode and the cathode increases, the wearing surface of the electron beam (26) will also become relatively large, so that the cross section of the electron beam (26) is larger than that of the anode 2 powder layer (13). The region, or even the diffused electron beam (26), may fire the phosphor layer (13) of the adjacent unit, thereby causing poor color purity or poor image resolution of the display surface. ^The unit structure of the anode and cathode is designed to avoid the divergence of the electron beam. The known technology also provides some solutions for this. The direct reduction of the cathode electron emission source corresponds to (the relative area of the two or the cathode electron). The emission source layer (2) is then added = ^ 丄 by a plurality of smaller The electron emission source of the unit is formed, so that the cross section of the electron beam (26) generated by each single Π: Π = 3) can be close to the area of the area where the anode is excited by the glare powder layer (13), but the mode is oriented When the area of the electron emission source layer (23) is reduced, the electron production efficiency is reduced, or the area of the corresponding phosphor powder —r — # ^ 蛍 台 台 (13) is reduced, and the adjacent gap is increased. 'Improve the resolution of the kneading surface. The ^^' can be: = the gate (25) in the structure and the cathode conductive layer (22) can be external:, and; in addition to the work of electronic extraction, electricity = / effect = M82i7 but this kind of design will increase the screen reaction time and reduce the design complexity, 1248627 曰 case number 9310fi21f) 5. Invention description (6) = the upper electrode can provide - convergence voltage or bias 疋 疋 极 萤 萤 萤The predetermined position of the layer (13), the amount of the large-size display product of the iron and the foot; the micro-test of the page light, it is difficult to be full (20 other): the cathode plate of the field emission display above the three-dimensional structure" vacuum of the % plate (10) The gap is maintained by a support cry (邛80 dozen) (14) or barrier wall (:^13), lacking - 20) In a non-dwelling cranial recognizing Gu Shi ..... Yin% plate (10 'glass 妒-π two non-vacuum state, in order to prevent the two large pieces, the conventional support device is mostly glass ball or cross strip Glass, or supported by other long objects. Adhere to the cathode plate (20) and the anode plate (10), because::;;;;:: attaching the fixing agent 'and then sticking to the anode Board (2, heart, and then through a sintering process to finish: the display of the face of the display, and does not affect the direct: ΪΪ::? 7 is mostly in the size of Μ ^ to "Ο ^, difficulty = ' Therefore, the structure has the following difficulties in the process, and the process is complicated: due to the support of the conventional support for crying or transferring equipment for planting: the requirements of the building are fine = that is, the relative b' alignment and the complexity and difficulty of the application Quite high. Pollution: Due to the conventional support, it is necessary to carry out the force afterwards;;:; in the = plate (1〇,) cooked to enter the tamping, so that the anode and cathode plates (10, 20)

W 第10頁 1248627W Page 10 1248627

和支撐器（14)完成固定封著，將已沾有沾漿之支撐器 佈植在陰陽極板（10，20)上，會使得沾漿對陰陽極板 (10 ’ 20)形成污染源；再者，在高溫燒結過程中，沾 之溶劑會揮發出來，勢必對陰陽極板（1〇，2〇)造成二&污 此外，該種支撐器（14)於電場操作過程中，因支撐器 (14)之表層容易聚集電荷，因此各該支撐器（14)之周圍亦 形成一電場，此將影響電子束之路徑及其撞擊螢光粉體層 (1 3 )之效果。And the support (14) is fixedly sealed, and the supporter with the slurry is implanted on the anode and cathode plates (10, 20), which causes the slurry to form a pollution source for the anode and cathode plates (10'20); In the high-temperature sintering process, the solvent will volatilize, which will inevitably cause two & smudges on the anode and cathode plates (1〇, 2〇). In addition, the supporter (14) is operated during the electric field due to the support. The surface layer of (14) tends to accumulate charges, so an electric field is also formed around each of the supports (14), which affects the path of the electron beam and its effect on the phosphor powder layer (13).

【發明内容】 本發明之主要目的，即在於提供一種四極結構之場發射 顯示器及其製造方法，其係於陽極與陰極間設置一閘極層 及一收斂電極層，形成一種四極結構，藉由該第四極—收曰 斂電極-之設置，有效收斂電子束之發散程度，即縮小截 面電=束之截面，可精準的撞擊螢光粉體層，卻不會影響 畫面冗度、解析度及色純度’且不增加製造成本。SUMMARY OF THE INVENTION The main object of the present invention is to provide a four-pole structure field emission display and a manufacturing method thereof, which are provided with a gate layer and a convergence electrode layer between the anode and the cathode to form a quadrupole structure. The fourth pole-receiving electrode-setting is effective to converge the divergence of the electron beam, that is, the cross-section electric=beam cross section can accurately impact the phosphor powder layer without affecting the image redundancy and resolution. And color purity' without increasing manufacturing costs.

本發明之另一目的，即在於提供一種四極結構之場發射 顯示器及其製造方法，其係以一金屬導電板形成收斂電極 層，閘極與收斂電極係分別布設於一金屬導電板之兩側， 形成一種三明治夾心結構之網罩（mesh)，其可以獨立加工 製造，再與陰陽極板進行封裝，徹底解決習用者於陰極基 板以微影製程逐層累積形成所造產生之成本高昂及其層積 厚度難以均勻一致之問題。 、Another object of the present invention is to provide a four-pole structure field emission display and a method for fabricating the same, which are formed by forming a convergent electrode layer with a metal conductive plate, and the gate electrode and the convergence electrode system are respectively disposed on both sides of a metal conductive plate. Forming a sandwich of sandwich sandwich structure, which can be independently fabricated and packaged with the anode and cathode plates, completely solving the high cost of forming a layer by layer of the cathode substrate on the cathode substrate. The problem that the thickness of the laminate is difficult to be uniform. ,

1248627 案號 931062161248627 Case number 93106216

五、發明說明（8) 本，明之再一目的，即在於提供一種四極結構之場發射 :不=及其製造方&，其使場發射顯示器製造之難度降 射顯^有效降低成本外’更適於量產製造大尺寸之場發 射i發：之又又…，即在於提供-種四極結構之場發 次1 及其製造方法’其以一玻璃板取代複數支撐器， 2開極及收斂電極之網罩與陽極板之間，使電荷不 / ♦集在該種板狀支撐器上，不會產生非預期 r^^red)的電場，使電子束可準確的撞擊對應的螢光 詈述目的’本發明主要係於陽極板與陰極板之間設 f绍ΐ 該網罩設有—閉極層及—收斂電極層，1間以 有複隔：=一獨立之三明治結構體，該網罩開設 置 母透孔係對應於每一組陰陽極單元，該網 =之收斂電極κ系面對陽極才反，使之 電子束可藉收斂電極限縮其發散幅度斤射出之 電極層之間，以一支撐玻璃w 度另於％極板與收斂 為支。 ^玻璃板（咖㈣g glass plate)作 【實施方式】 請參閱第三圖，其係為本發明 陽極單元表示，陽極板(30)之每ί陽=元组陰 (33)係附著於陽極導電層（ =之螢光粉體層 著於陽極基板⑶)上，·而(陰二=導】f⑽則附 之母一陰極單元則以 1248627V. INSTRUCTIONS (8) The purpose of this and other purposes is to provide a field emission of a quadrupole structure: not = its manufacturer &amplifier, which makes the field emission display manufacturing difficult to reduce the cost and effectively reduce the cost outside' It is more suitable for the mass production of large-scale field emission i-fabrication: it is also to provide a four-pole structure of the field and its manufacturing method 'which replaces the multiple supports with a glass plate, 2 open and Between the mesh cover and the anode plate of the astringent electrode, the electric charge is not collected on the plate-shaped support, and an electric field of an unintended r^^red is generated, so that the electron beam can accurately collide with the corresponding fluorescent light. OBJECTS OF THE INVENTION The present invention is mainly provided between the anode plate and the cathode plate. The mesh cover is provided with a closed layer and a convergent electrode layer, and one has a separation: = a separate sandwich structure. The mesh cover is provided with a female through hole corresponding to each set of anode and cathode units, and the net=the convergence electrode κ is opposite to the anode, so that the electron beam can be contracted by the convergence electrode to reduce the amplitude of the electrode layer. Between the support of the glass w degrees and the % plate and convergence . [Embodiment] Please refer to the third figure, which is shown in the anode unit of the present invention. The layer (=the phosphor powder layer is on the anode substrate (3)), and the (cathode ==) f(10) is attached to the mother-cathode unit as 1248627

電子源發射層（43)附著於陰極導電層（42)上，該陰極導電 層（4 2 )則附著於陰極基板（41 )上。在該陰極板（4 〇 )鱼陽極 板（30)間對應固設有一網罩（5)，其係為具有收斂電極層 (5 1 )、絕緣層（5 2 )及閘極層（5 3 )之三層結構，且其收敛電 極層（51)係面對陽極板（30)，而閘極層（53)係面對陰極板 (40)，該閘極層（53)及收斂電極層（51 )均載有適當之電 位。另該網罩（5 )上開設有對應於每一陰陽極單元之複數 透孔（54)，以容由電子源發射層（43)射向螢光粉體層（33) 之電子束穿越。 該網罩（5 )係如第四圖所示，係以一金屬導電板為基 板，即以其做為收斂電極層（51)，於其下側面布設一絕緣 層（5 2 )，再於該絕緣層（5 2 )之下侧面布設一導電層，即形 成閘極層（53)，其中該網罩（5)之金屬導電板（即收斂電極 層（51))上開設有複數個成矩陣排列之透孔（54)，透孔 (54)之位置係對應於每一陰陽極單元（即電子發射源及螢 光粉體）排列，以做為陰極電子發射源層（43)產生電子束 以射向陽極螢光粉體層（33)時穿越網罩（5)之通道。該金 屬導電板之外圍部份為無效區域（55)，該無效區域（55)内 之適當位置處可設置複數個對位記號（551)，以為真空封 裝時對位之用，以利陰、陽極單元對應於該網 各透孔（54)。 陽極板（30)與收斂電極層（51)之間，係夾合有一支撐玻 璃板（34)，如第五圖所示，其材質為與陰陽極基板（31， 41具有相同或近似膨脹係數之玻璃，厚度可依所需間隙The electron source emitting layer (43) is attached to the cathode conductive layer (42), and the cathode conductive layer (42) is attached to the cathode substrate (41). A mesh cover (5) is disposed between the cathode plate (4 〇) fish anode plate (30), which has a convergence electrode layer (5 1 ), an insulation layer (52), and a gate layer (5 3 ). a three-layer structure in which the convergent electrode layer (51) faces the anode plate (30), and the gate layer (53) faces the cathode plate (40), the gate layer (53) and the convergent electrode layer (51) both carry appropriate potentials. Further, the net cover (5) is provided with a plurality of through holes (54) corresponding to each of the anode and cathode units to accommodate electron beam crossing of the electron source emitting layer (43) toward the phosphor powder layer (33). The net cover (5) is a metal conductive plate as a substrate, that is, as a convergent electrode layer (51), and an insulating layer (52) is disposed on the lower side thereof, as shown in the fourth figure. A conductive layer is disposed on a side surface of the insulating layer (52), that is, a gate layer (53) is formed, wherein the metal conductive plate (ie, the convergence electrode layer (51)) of the mesh cover (5) is provided with a plurality of layers The through holes (54) of the matrix are arranged, and the positions of the through holes (54) are arranged corresponding to each of the anode and cathode units (ie, the electron emission source and the phosphor powder) to generate electrons as the cathode electron emission source layer (43). The beam passes through the passage of the mesh cover (5) when it is directed toward the anode phosphor powder layer (33). The peripheral portion of the metal conductive plate is an inactive area (55), and a plurality of alignment marks (551) may be disposed at appropriate positions in the ineffective area (55) for use in alignment during vacuum packaging to facilitate yin, The anode unit corresponds to each of the through holes (54) of the mesh. Between the anode plate (30) and the astringent electrode layer (51), a supporting glass plate (34) is sandwiched, as shown in the fifth figure, and the material has the same or similar expansion coefficient as the cathode and cathode substrates (31, 41). Glass, the thickness can be according to the required gap

第13頁 1248627 案號 93106216 曰 修正 五、發明說明（10) 決定，一般約在0.5mm至1·5ππη之間。該支撐玻璃板（34)上 開設有對應於每一陰陽極單元（亦即每一透孔（5 4)處）之複 數穿孔（341)，以容來自電子源發射層（43)之電子束穿越 而射向螢光粉體層（3 3 )。另亦可開設較大之穿孔（3 4丨，）， 即如第六圖所示者，每一個大穿孔（341，）係對應含蓋二個 或二個以上之陰陽極單元之範圍。另該支撐玻璃板（34)之 周圍之無效區域（342)亦設有對位記號（343)，以供與網罩 (5)及陽極板（30)之定位固著。而在陽極板（3〇)與支撐玻 璃板（3 4 )之間’係以網版印刷方式設置有阻隔壁（3 5 )，以 維持兩者間之一定間隙，使在封裝時提供氣導作用。 陰極基板（41)與閘極層（53)之間，則設置有習知之阻隔 壁（44j或支撐|§(spacer，一種柱狀體），該阻隔壁（以）與 支撐器係為等效物，可互相取代，但於本發明之四極結構 中，以在陰極基板（41)與閘極層（5 3)間設置厚度約為 /zm至150/zm之阻隔壁（44)為佳，因其可提供為氣導路徑之 用。當然，該阻隔壁（44)係配置於網罩（5)之各透孔（54) 間0 於本發明之四極結構場發射顯示器中，其電子 徑示於第七圖中’電子藉閘極層(53)將電子由電子發射源 d3即：引出後，即形成電子束(6)射向登光粉 斂電位於收斂電極層(二；=二53)没取電位之收 (51)時，電子Hi i當電子束（6)經過收斂電極層 革子束（6)截面之發散程度即被限制，產生雷+ 束（6)收斂之效果，電子束⑷即可被限制撞擊螢光粉體層Page 13 1248627 Case No. 93106216 修正 Amendment 5. Invention Description (10) The decision is generally between 0.5mm and 1·5ππη. The supporting glass plate (34) is provided with a plurality of perforations (341) corresponding to each of the cathode and cathode units (ie, at each of the through holes (54)) to receive an electron beam from the electron source emitting layer (43). Passing through to the phosphor powder layer (3 3 ). A larger perforation (3 4 丨,) can also be provided, that is, as shown in the sixth figure, each large perforation (341,) corresponds to a range of two or more cathode and anode units. In addition, the inactive area (342) around the supporting glass plate (34) is also provided with a registration mark (343) for positioning and fixing with the net cover (5) and the anode plate (30). And between the anode plate (3〇) and the supporting glass plate (34), a barrier wall (35) is provided by screen printing to maintain a certain gap between the two to provide air conduction during packaging. effect. Between the cathode substrate (41) and the gate layer (53), a conventional barrier wall (44j or support | § (spacer) is used, which is equivalent to the support system. The materials may be mutually substituted, but in the quadrupole structure of the present invention, it is preferable to provide a barrier wall (44) having a thickness of about /zm to 150/zm between the cathode substrate (41) and the gate layer (53). Because it can be provided as a gas guiding path. Of course, the barrier wall (44) is disposed between the through holes (54) of the mesh cover (5) in the quadrupole structure field emission display of the present invention, and the electronic diameter thereof As shown in the seventh figure, the 'electron borrowing gate layer (53) takes electrons from the electron emission source d3, ie, after the electron beam (6) is formed, and the electron beam is directed to the light-converging powder to be located at the convergence electrode layer (two; = two) 53) When the potential is not taken (51), the electron Hi i is limited when the electron beam (6) passes through the cross section of the convergent electrode layer (6), and the effect of the convergence of the lightning + beam (6) is generated. The electron beam (4) can be restricted from hitting the phosphor powder layer

第14頁 五、發明說明（11) (33)之預定區域，而不致因過度發 螢光粉體層⑶）。 ^至4近早疋之 ^明之網罩⑸之製造方法，係選用—種膨 近於陰陽極基板（31，4丨）之金屬導電板（如一 = 約在82χ10-7〜86xl0-7/t之鐵鎳碳複合板，厚产為糸數 150#m)，以利於該網罩（5)與陰陽極基板（31 ^丨）於直* 封襄程序中，可減少因加熱膨脹過程中三者之膨脹差^ = ^成裂片情、况之發纟。續於該金屬導電板上以冑 汽马 ==開！複數透孔(54) ’該金屬導電板即形成收^ J層⑸），該收斂電極層⑼之_側表面 ： =，化製作一絕緣層(52)，如以杜邦(Dup〇nd)次公微， =之=塗膠财01，以印刷方式印製於收斂電極層 i 控制在10〜1GMm，並使該絕緣層（μ)燒結 制者难1敛ί極層(51)上，該絕緣層(52)之外側再以印 :、濺鍍、療鍍或微影製程圖騰化製作一導電層，如杜邦 (ji^ond)么司所生產之銀導電塗膠DC2〇6，以 (Τί=’其厚度控制在4〜1()-，此即形成=層 電=1,之功能即係提供阻隔開極層 π *n二π μ β蛉通。依此製作後即完成本發明之具閘極 53，=，電極(51)之網罩⑸，該網罩(5)為一獨立元 a °、 加工製作，無需依附於基板上。 # 之金屬導電板透孔（54)可成型為特定形 透孔（54，）係A效彳果，如第八圖所示者即為其中一種，該種 '、二到角錐形，其上方孔徑大於下方孔徑。第 1248627 案號 93106216 a 修正 五、發明說明（12) 九圖所不者為第二種透孔型態，該種透孔（54 )漏A 上下方之開口孔徑較大，而中段孔控較小 ^腰形態。又上述兩種透孔（5 4，’ 5 4，，）之最窄部份 皆以大於電子發射源層（43)之對角距離為佳。 以上所述僅為本發明 偈限本發明之專利範圍例之例示說明’ 為之任何尊效變化，均庫佴=運用本發明之專利 應俱屬本發明之專利範圍。 ”）係成 ，形成 之孔徑 非用以 精神所 1248627Page 14 V. Inventive Note (11) (33) The predetermined area, without excessive phosphorescence (3). ^ to 4 near the early morning ^ ^ Ming net cover (5) manufacturing method, is selected to expand the metal conductive plate near the anode and cathode substrate (31,4 丨) (such as a = about 82χ10-7~86xl0-7/t The iron-nickel-carbon composite board has a thickness of 150#m) to facilitate the net cover (5) and the anode-anode substrate (31^丨) in the straight* sealing process, which can reduce the heat expansion process. The difference in the expansion of the person ^ ^ ^ into a split piece of love, the situation is worry. Continue on the metal conductive plate with 胄 汽马 == on! a plurality of through holes (54) 'the metal conductive plate is formed to form a layer (5)), the side surface of the convergent electrode layer (9): =, to form an insulating layer (52), such as DuPont (Dup〇nd) times Public micro, = = 胶胶财01, printed on the convergence electrode layer i is controlled at 10~1GMm, and the insulation layer (μ) is sintered to make it difficult to converge on the electrode layer (51). On the outer side of the insulating layer (52), a conductive layer is formed by printing, sputtering, plating or lithography process, such as silver conductive coating DC2〇6 produced by DuPont (ji^ond). Τί='The thickness is controlled at 4~1()-, which means that = layer = 1 is formed, and the function is to provide a barrier layer π * n π μ β 蛉 pass. The mesh cover (5) of the gate 53, =, the electrode (51), the mesh cover (5) is an independent element a °, processed and fabricated, and does not need to be attached to the substrate. #金属conductive plate through hole (54) Formed into a specific shape of the through hole (54,) is a effect of the effect of A, as shown in Figure 8, which is a kind of ', two to a pyramidal shape, the upper aperture is larger than the lower aperture. 1248627 Case No. 93106216 a Amendment 5 Explain that (12) Nine diagrams are not the second type of through-hole type. The aperture of the perforation (54) is higher in the upper and lower openings of the aperture A, and the aperture in the middle section is smaller than the waist shape. The narrowest portion of the through hole (5 4, '5 4,,) is preferably larger than the diagonal distance of the electron emission source layer (43). The above description is only for the purpose of the present invention. Illustrative description 'For any change in the effect of the privilege, the 佴 佴 佴 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用 运用

案號 93106216 圖式簡單說明 【圖式簡單說明】 之剖視圖。 之電子束射出路徑 第一圖：習知三極結構之場發射顯示。。 第二圖：習知三極結構之場發射顯示= 二立rsi 、卜為、 第三圖 第四圖 第五圖 圖〇 本發明之場發射顯示器 本發明之網罩結構示意 本發明之支撐玻璃板穿 之剖視圖。 圖 孔之一較佳實施例示意 第六圖 圖。 本發明之支撐玻璃板穿孔之另 一較佳實施例示意 第七圖：本發明之電子束射出路徑示意圖。 第八圖：本發明之收斂電極層透孔之一軺 圖。 佳貝施例剖視Case No. 93106216 Brief description of the drawing [Simplified description of the drawing] Electron beam exit path First figure: The field emission display of the conventional three-pole structure. . The second figure: the field emission display of the conventional three-pole structure = Erli rsi, Bu Wei, the third figure, the fourth figure, the fifth figure, the field emission display of the present invention, the net cover structure of the present invention, the supporting glass of the present invention A cross-sectional view of the board. A preferred embodiment of the aperture is illustrated in the sixth diagram. Another preferred embodiment of the support glass sheet perforation of the present invention is shown in a seventh embodiment: a schematic view of the electron beam exit path of the present invention. Figure 8 is a view showing one of the through holes of the convergent electrode layer of the present invention. Jiabei's case

第九圖：本發明之收斂電極層透孔之另一較佳杂^ 圖。 A施例剖视 [圖號說明] 習知部份： 1 〇 ···陽極板 1 2 ···陽極導電層 14 ···支撐器 21…陰極基板 2 3…電子發射源層 25…閘極層 11…陽極基板 13…螢光粉體層 20…陰極板 22…陰極導電層 2 4…介電層 26…電子束Fig. 9 is another preferred diagram of the through hole of the astringent electrode layer of the present invention. A section of the embodiment [illustration of the figure] Conventional part: 1 〇··· anode plate 1 2 ··· anode conductive layer 14 ···support 21...cathode substrate 2 3...electron emission source layer 25...gate Polar layer 11...anode substrate 13...fluorescent powder layer 20...cathode plate 22...cathode conductive layer 2 4...dielectric layer 26...electron beam

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_案號93106216_年月日 修正 圖式簡單說明 本發明部份： 30 " •陽 極 板 31 · •陽 極 基 板 32 " •陽 極 導 電 層 33 · •螢 光 粉 體 層 34 ·· •支 撐 玻 璃 板 341 · •穿 孔 342 - •無 效 區 域 343 · •對 位 記 號 35 ·· ••阻 隔 壁 40 · •陰 極 板 41 ·. "陰 極 基 板 42 · •陰 極 導 電 層 43 ·. .•電 子 發 射 源層 44 · •阻 隔 壁 5 ·. .•網 罩 51 · •收 斂 電 極 層 52 · .•絕 緣 層 53 · •閘 極 層 54 · .•透 孔 55 · •無 效 區 域 551 · .•對 位 記 號 6 · •電 子 束_ Case No. 93106216_Yearly and Monthly Correction Diagram Brief Description of the Invention: 30 " • Anode Plate 31 • • Anode Substrate 32 " • Anode Conductive Layer 33 • • Fluorescent Powder Layer 34 ·· • Support Glass Plate 341 · • Perforation 342 - • Invalid area 343 · • Alignment mark 35 ··•• Barrier wall 40 · • Cathode plate 41 ·. "Cathode substrate 42 · • Cathode conductive layer 43 ·. .• Electron emission source layer 44 · • Barrier wall 5 ···NET cover 51 · • Convergence electrode layer 52 · .•Insulation layer 53 · • Gate layer 54 · .• Through hole 55 · • Invalid area 551 · .• Alignment mark 6 · •Electron beam

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Claims (1)

12486271248627 1 · 一種四極結構之場發射顯示器，係包括： 一陽極板，係於一陽極基板上設置螢光粉體層； 一陰極板，係於一陰極基板上設置對應於 電子源發射層； @i 一網罩，設有一閘極層、一絕緣層及一收斂電極層，其 該收斂電極層係以一金屬導電板所形成，其上 數透孔 >，並於其一側面布設一絕緣層，再於該絕緣層之外 ，面布設一導電層，即形成閘極層，該收斂電極層係面對 陽極板，並載有收斂電位，而閘極層則面對陰極板，並載 有沒取電位’以自電子發射源層汲取電子； 一支撐玻璃板，係設於陽極板與收斂電極層之間，使兩 者保持一定距離及絕緣； 其中該閘極層與收斂電極層開設有複數個透孔，且支撐 玻，板亦開設有對應之複數穿孔，每一透孔及穿孔係對^ 於每一 ί子發射源層處，以容由電子發射源層所射出之電 子束可穿越該透孔而射向螢光粉體層，且當電子束行經收 斂，極層時，該收斂電極層可對電子束產生收斂作用，即 限縮電子束之發散幅度，使電子束可精準的撞擊對應之 光粉體層。 ~ 2 ·如申明專利範圍第1項所述之場發射顯示器，其中該 陰極板與閘極層之間，設置有阻隔壁或支撐器。 3·如申請專利範圍第2項所述之場發射顯示器，其中該 阻隔壁或支撐器係配置於各透孔間。 4·如申請專利範圍第1項所述之場發射顯示器，其中該1 . A field emission display of a quadrupole structure, comprising: an anode plate, wherein a fluorescent powder layer is disposed on an anode substrate; and a cathode plate is disposed on a cathode substrate corresponding to an electron source emitting layer; @i a mesh cover is provided with a gate layer, an insulating layer and a convergent electrode layer, wherein the convergent electrode layer is formed by a metal conductive plate having a number of through holes and an insulating layer is disposed on one side thereof Further, outside the insulating layer, a conductive layer is disposed on the surface, that is, a gate layer is formed, the asymmetrical electrode layer faces the anode plate and carries a convergence potential, and the gate layer faces the cathode plate and carries No potential is taken to extract electrons from the electron emission source layer; a supporting glass plate is disposed between the anode plate and the astringent electrode layer to maintain a certain distance and insulation; wherein the gate layer and the convergence electrode layer are opened a plurality of through holes, and supporting the glass, the plate is also provided with a corresponding plurality of perforations, each of the through holes and the perforations are respectively disposed at each of the emission source layers to allow the electron beams emitted from the electron emission source layer to be Passing through the through hole The light powder layer, and when the electron beam passes through the convergence layer, the convergence electrode layer can converge the electron beam, that is, the emission amplitude of the electron beam is limited, so that the electron beam can accurately collide with the corresponding light powder layer. . The field emission display of claim 1, wherein a barrier wall or a support is disposed between the cathode plate and the gate layer. 3. The field emission display of claim 2, wherein the barrier or support is disposed between the through holes. 4. The field emission display of claim 1, wherein the field emission display 1248627 六、申請專利範圍 支撐玻璃板之穿孔亦 之較大孔徑者。 5·如申請專利範圍 金屬導電板之外圍部 位置處可設置複數個 6 ·如申請專利範圍 透孔係成型為倒角錐 7 ·如申請專利範圍 透孔之下方孔徑係大 8 ·如申請專利範圍 透孔係成型為沙漏形 徑較小。 9 ·如申請專利範圍 透孔之下方孔徑係大 I 0 ·如申請專利範圍 收斂電位係低於汲取 II ·如申請專利範圍 支撐玻璃板與陽極板 1 2 · —種四極結構之 提供一陽極基板及 布設複數個陰極單 布設複數個陽極單 製作具有閘極層及 提供一支撐玻璃板 月 曰 修正 可為含蓋複數個相鄰之電子發射源層 第1項所述之場發射顯示器，其中該 份為無效區域’該無效區域内之適當 對位記號。 第1項所述之場發射顯示器，其中該 形，其上方孔徑大於下方孔徑。 第6項所述之場發射顯示器，其中該 於電子發射源層之對角距離。 第1項所述之場發射顯示哭，盆Φ兮 ，上下方之開口孔徑較大'而中中段; 第8項所述之場發射顯示器，苴中該 於電子發射源層之對角距離/、 第1項所述之場發射顯示器，其中該 電位。 第1項所述之場發射顯示器，其中該 之間係設有阻隔壁。 ’、 場發射顯示器之製造方法，係包括： 一陰極基板； 元於陰極基板上； 元於陽極基板上； 收敛電極層之網罩；1248627 VI. Patent application scope The larger aperture of the perforation supporting the glass plate. 5. If the peripheral part of the metal-conducting plate of the patent application area can be set at a plurality of positions 6 · If the patented range is formed into a chamfered cone 7 · If the aperture diameter of the hole below the patented range is large 8 · If the patent application scope The through hole system is formed such that the hourglass has a small diameter. 9 · If the aperture diameter below the through-hole of the patent application range is large I 0 · If the patent application range convergence potential is lower than the extraction II · If the patent application range supports the glass plate and the anode plate 1 2 · A four-pole structure provides an anode substrate And arranging a plurality of cathodes, a plurality of anodes, a plurality of anodes, a gate layer, and a support glass plate, wherein the correction may be a field emission display according to item 1 of the plurality of adjacent electron emission source layers, wherein The copy is the invalid area 'the appropriate alignment mark in the invalid area. The field emission display of item 1, wherein the shape has a larger aperture above the aperture. The field emission display of item 6, wherein the diagonal distance of the electron emission source layer. The field emission described in item 1 shows crying, the basin Φ兮, the opening aperture of the upper and lower sides is larger and the middle and middle sections; the field emission display of item 8 is the diagonal distance of the electron emission source layer in the // The field emission display of item 1, wherein the potential is. The field emission display of item 1, wherein a barrier wall is provided between the fields. The manufacturing method of the field emission display comprises: a cathode substrate; a component on the cathode substrate; a component on the anode substrate; a mesh cover of the convergence electrode layer; 1248627 -- 案號 Q3infi21fi_ 六、申請專利範圍 將網罩及支樓玻璃板定位固著於陰極及陽極基板之間。 1 3 ·如申請專利範圍第丨2項所述之場發射顯示器之製造方 法，其中該網罩係選用一種膨脹係數接近於陰陽極基板之 金屬導電板，於該金屬導電板上開設複數透孔，該金屬導 電板即形成收斂電極層，於該收斂電極層之一側表面，製 作一絕緣層，並使該絕緣層燒結固著於收斂電極層上，再 於該絕緣層之外側製作一導電層，即形成閘極層。1248627 -- Case No. Q3infi21fi_ VI. Application for Patent Scope The mesh cover and the glass plate of the branch are fixed between the cathode and the anode substrate. The manufacturing method of the field emission display of claim 2, wherein the mesh cover adopts a metal conductive plate whose expansion coefficient is close to that of the anode and cathode substrate, and a plurality of through holes are formed in the metal conductive plate. Forming a convergent electrode layer on the metal conductive plate, forming an insulating layer on one side surface of the convergent electrode layer, sintering the insulating layer on the convergent electrode layer, and forming a conductive layer on the outer side of the insulating layer The layer forms the gate layer. 1 4 ·如申請專利範圍第丨3項所述之場發射顯示器之製造方 法，其中該金屬導電板係為鐵鎳碳複合板。 1 5 ·如申請專利範圍第丨3項所述之場發射顯示器之製造方 法，其中該透孔係以雷射或微影蝕刻程序開設。 1 6.如申請專利範圍第丨3項所述之場發射顯示器之製造方 法，其中該絕緣層係以印刷或微影製程圖騰化製作。 1 7 ·如申請專利範圍第丨6項所述之場發射顯示器之製造方 法，其中該絕緣層係為杜邦（DuPond)公司所生產之玻璃 塗膠DG0 0 1，以印刷方式印製於收斂電極層上。 1 8 ·如申請專利範圍第丨3項所述之場發射顯示器之製造方The manufacturing method of the field emission display of claim 3, wherein the metal conductive plate is an iron-nickel carbon composite plate. The manufacturing method of the field emission display of claim 3, wherein the through hole is opened by a laser or microlithography etching process. 1 6. The method of fabricating a field emission display of claim 3, wherein the insulating layer is produced by printing or lithography process totemization. The manufacturing method of the field emission display according to claim 6, wherein the insulating layer is a glass coating glue DG0 0 1 produced by DuPont, printed on the convergence electrode. On the floor. 1 8 · Manufacturer of the field emission display as described in item 3 of the patent application 法’其中該閘極層係以印刷、濺鍍、蒸鍍或微影製程圖騰 化製作。 1 9 ·如申請專利範圍第1 8項所述之場發射顯示器之製造方 法，其中該閘極層係為杜邦（DuPond)公司所生產之銀導電 塗膠DC2 0 6，以印刷方式印製於絕緣層上。 2 0 ·如申請專利範圍第1 3項所述之場發射顯示器之製造方 法，其中該網罩係可獨立加工製作者。The method of the gate is made by printing, sputtering, evaporation or lithography process totem. The manufacturing method of the field emission display according to claim 18, wherein the gate layer is a silver conductive adhesive DC2 0 6 produced by DuPont, printed on the printing method. On the insulation layer. A manufacturing method of a field emission display as described in claim 13 wherein the mesh cover is independently processable. 第21頁 1248627 修正 案號 9310R?1ft 六、申請專利範圍 、2 1 ·如申請專利範圍第i 3項所述之場發射顯示器之製造方 法，其中該透孔係成型為倒角錐形，其上方孔徑大於 孔徑。 乃 2 2 ·如申請專利範圍第2 1項所述之場發射顯示器之製造方 法，其中該透孔之下方孔徑係大於電子發射源層之對角距 離0 23·如申請專利範圍第13項所述之場發射顯示器之製造方 法’其中該透孔係成型為沙漏形，上下方之開口孔徑較 大，而中段孔徑較小。 24·如申請專利範圍第23項所述之場發射顯示器之製造方 法，其中該透孔之下方孔徑係大於電子發射源層之對角 離。 25·如申請專利範圍第1 2項所述之場發射顯示器之製造方 法，其中該支撐玻璃板係選用一種膨脹係數接近於陰陽極 基板之玻璃板，於該支撐玻璃板上開設複數穿孔。 2 6 ·如申請專利範圍第2 5項所述之場發射顯示器之製造方 法，其中該穿孔係對應於一或一個以上相鄰之陰極或陽極 單元。 ° 2 7.如申請專利範圍第1 2項所述之場發射顯示器之製造方 法，其中該支撐玻璃板與陽極板之間係設有阻隔壁。 2 8 · —種四極結構之場發射顯示器之網罩，係於陽極與陰 極基板之間，設有閘極層及收斂電極層，係包括： 一金屬導電板，係做為基板，其上開設有複數透孔，並 以其做為收斂電極層；Page 21 1248627 Amendment No. 9310R? 1ft VI. Application Patent Range, 2 1 · A method of manufacturing a field emission display as described in claim i, wherein the through hole is formed as a chamfered cone, above The pore size is larger than the pore size. The manufacturing method of the field emission display of claim 2, wherein the aperture diameter below the through hole is larger than the diagonal distance of the electron emission source layer, as shown in item 13 of the patent application scope. The manufacturing method of the field emission display is described in which the through hole is formed into an hourglass shape, and the upper and lower openings have a larger aperture and the middle portion has a smaller aperture. The method of manufacturing a field emission display according to claim 23, wherein the aperture diameter below the through hole is larger than the diagonal separation of the electron emission source layer. The method of manufacturing a field emission display according to claim 12, wherein the supporting glass plate is a glass plate having a coefficient of expansion close to that of the anode and cathode substrate, and a plurality of perforations are formed on the supporting glass plate. The method of fabricating a field emission display of claim 25, wherein the perforation corresponds to one or more adjacent cathode or anode units. The manufacturing method of the field emission display of claim 12, wherein a barrier wall is provided between the supporting glass plate and the anode plate. 2 8 · A four-pole structure field emission display net cover, between the anode and the cathode substrate, is provided with a gate layer and a convergence electrode layer, comprising: a metal conductive plate, which is used as a substrate, which is opened a plurality of through holes, and as a convergent electrode layer; 1248627 -------塞號 93106216_^_J-§-^--- 一 六、申請專利範圍 一絕緣層，布設於金屬導電板之一側面； 一導電層，布設於該絕緣層之外側面，即以該導電層形 成閘極層。 2 9 ·如申請專利範圍第2 8項所述之網罩，其中該金屬導電 板之外圍部份為無效區域，該無效區域内之適當位置處可 設置複數個對位記號。 3 0 ·如申請專利範圍第2 $項所述之網罩，其中該透孔係成 型為倒角錐形，其上方孔徑大於下方孔径。1248627 ------- plug number 93106216_^_J-§-^--- 1-6, the patent application scope of an insulating layer, laid on one side of the metal conductive plate; a conductive layer, laid outside the insulating layer On the side, the gate layer is formed by the conductive layer. 2. The net cover of claim 28, wherein the outer portion of the metal conductive plate is an ineffective area, and a plurality of alignment marks may be disposed at appropriate positions in the invalid area. 3 0. The net cover of claim 2, wherein the through hole is shaped as a chamfered cone having a larger aperture above the lower aperture. 31·如申請專利範圍第3〇項所述之網罩，其中該透孔之下 方孔徑係大於電子發射源層之對角距離。 3 2 ·如申請專利範圍第28項所述之網罩，其中該透孔係成 型為沙漏形，上下方之開口孔徑較大，而中段孔徑較小。 33.如申請專利範圍第32項所述之網罩，其中該透孔之下 方孔径係大於電子發射源層之對角跑離。The net cover of claim 3, wherein the aperture below the through hole is larger than the diagonal distance of the electron emission source layer. 3 2 The net cover according to claim 28, wherein the through hole is shaped like an hourglass, and the upper and lower openings have a larger aperture and the middle portion has a smaller aperture. 33. The net cover of claim 32, wherein the aperture below the through hole is larger than the diagonal of the electron emission source layer. 第23頁Page 23