TWI246776B - Manufacturing method of light emitting devices - Google Patents

Manufacturing method of light emitting devices Download PDF

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Publication number
TWI246776B
TWI246776B TW93123082A TW93123082A TWI246776B TW I246776 B TWI246776 B TW I246776B TW 93123082 A TW93123082 A TW 93123082A TW 93123082 A TW93123082 A TW 93123082A TW I246776 B TWI246776 B TW I246776B
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Taiwan
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light
process temperature
surface layer
manufacturing
layer
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TW93123082A
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Chinese (zh)
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TW200607105A (en
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Huei-Huei Lin
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Huei-Huei Lin
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Publication of TW200607105A publication Critical patent/TW200607105A/en

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Abstract

Disclosed is a manufacturing method of light emitting devices containing the following steps: providing a light emitting semiconductor substrate on which a liquid-state adhesion layer is formed, rising the temperature to a first process degree so as to bake the liquid-state adhesion layer into a soft gel layer constituted by the cover layer and the inner layer of the adhesion layer, lowering the temperature to a second process degree which is lower than the first process in order to enable the phosphor powder to attach and embed into the cover layer, finally to rise the temperature again to a third process degree which is higher than the second process to completely cure the cover layer and the inner layer.

Description

1246776 九、發明說明: 【發明所屬技術領域】 本發明係有關於一種發光裝置製造方法,特別有關於一種 發光二極體製造方法。 【先前技術】 、,目刖市面上銷售之白光二極體,係於藍光二極體晶片之發 〇面上附著一螢光膠層,當藍光二極體發出藍光時,將與螢光 膠層中螢光粉受藍光激發所發出之黃光混合形成白光。 ▲如第1圖所不’先前技術之步驟首先係將螢光粉混入 膏狀之環氧樹月旨等透光踢u中,授拌均勾後,再以塗佈之方 式附著於發光二極體10表面。 然而,由於膏狀之環氧樹脂等透光膠固化過程中具 ^机動性’因此,在塗佈之後’螢光粉在透光膠中經常無法繼 續保持均勻分佈狀態’且由於無法控制其密度,導致發光二極 體發出之白光發生偏藍之現象。 【發明内容】 有鑑於此’本發明提供一種發光裝置製造方法,包括:提 供-發光半導體基板;形成_液態黏著層於發光半導體基板 上;升溫至一第一製程溫度以洪烤液態黏著層,使液態黏著層 形成-由表面層及内部層構成之軟性膠體層,其中,表面層I 硬化程度南於内部層,但表面層仍具有黏滯性,·降溫至—低於 第衣矛幻皿度之一第—製程溫度;提供一由溶劑與螢光粉組成 1246776 之螢光液;使發光半導體基板位於該螢光液中;以該第二製程 溫度去除溶劑,使該些螢光粉附著於表面層上;使該些螢光粉 欣合於表面層;及升溫至一高於該第二製程溫度之—第三製程 溫度以完全固化表面層及内部層。 本發明之另一目的在於提供一種發光裝置製造方法,包括· 提供一發光半導體基板;形成一液態黏著層於發光半導體基板 上’升溫至一第一製程溫度以烘烤液態黏著層,使液態黏著層 形成一由表面層及内部層構成之軟性膠體層,其中,表面層之 硬化程度高於内部層’但表面層仍具有黏滞性;降溫至一低於 第-製程溫度之-第二製程溫度;使該些螢光粉附著於表面層 上;使該些螢光粉拔合於表面層;及升溫至一高於第二製程溫 度之-第三製程溫度以完全固化表面層及内部層。皿 /、中在本《明之較佳實施例中,液態黏著層可為環氧樹 脂、矽膠、或溶膠之一。 而在製程溫度方面,第-製程溫度範圍係選擇60-90攝氏 度’或者較佳之溫度_在⑨M攝氏度。第二製程溫度範 圍係選擇35 — 45攝氏度,或者較佳之溫度範圍在於40攝氏度。 第三製程溫度範圍係選擇12(] 详U0 145攝氏度,而或者較佳之溫产 範圍在於135攝氏度。 又 本發明之較佳實施例ψ,”〆 之選 λ也例中’洛劑係包含醇類,或者較佳 1246776 擇為乙醇。 另在使螢光粉附著於表面層上之步驟中,較 土 <貫施例係 包括:提供一容器;使發光半導體基板位於容器中;及填充 光粉於容器内,以使螢光粉附著於表面層上。 其中’使螢光粉嵌合於表面層上之步驟中,較 每 土 <貫施利 則包括:提供-遂合裝置;及以屢合裝置擠壓螢光粉而使之後 合於表面層。 【實施方式】 本發明揭露之發光i裝置之製造方法實施例係如第“第6 圖所示。 請參閱第1圖,首先提供一發光半導體基板1〇〇,而在本 實施例中則以可發出藍光之發光二極體為例。 接著,請參閱第2圖,形成-不含螢光粉之液態黏著層 110於發光半導體基板1QG上,而在本實施例中液態黏著層曰可 為環氧樹脂、石夕膠、或溶膠(sol_gel),並藉由塗佈之方式形 成於可發出藍光之發光二極體表面。 其次,請參閱第3圖,烘烤液態黏著層11〇以使液態黏著 層形成-由表面層112及内部層114構成之軟性膠體層,其 中,表面層112之硬化程度高於内部層114,但表面層ιΐ2仍 具有黏滯性。舉例而言’本實施例係採取升溫至6〇一9〇攝氏度 的範圍烘烤約30-50分鐘’如以環氧樹脂為例,較佳的製程條 1246776 以使表面層逐漸固 件是以80-90攝氏度進行烘烤約4〇分鐘 化但仍保持其黏滯性。 然後為避免上述軟性膠體芦因 股增固化過於快速,因此必須進行 溫至35-45攝氏度以減緩軟性膠 %氧树脂為例,較佳的製程條件是降溫 降溫製程,本實施例係採取降 體層之固化速度,如以 至40攝氏度。 接著請參閱第4圖,提供一由溶劑134與螢光粉132組成 之螢光液13〇,以使發光半導體基板⑽位於榮光液13〇中, 舉例而5 ’可選擇將可發出藍光之發光二極體置於容器⑽底 部’然後倒人螢光液’而本實施例係選擇醇類作為溶劑,例如 將YAG或TAG等受激發光之螢光粉與乙醇混合。 然後’請參閱第5圖,去除乙醇等溶劑134以使螢光粉 132附著於表面層112±,例如持續維持上述即-仏攝氏度之 製程溫度來去除乙醇等溶劑134,待乙醇揮發散去,螢光粉132 即附著於表面層112上,而在此製程溫度之下,表面層仍尚未 完全固化並具有黏滯性。 请芩閱第6圖,使螢光粉132嵌合於具有黏滞性之表面層 112,例如藉由擠壓之方式,使螢光粉粒能夠均勻地嵌合於表 面層112中而不會任意流動。 然後’藉由升溫以完全固化表面層112及内部層114並避 免螢光粉粒脫落,舉例而言,可選擇在12〇 — 145之攝氏度下持 1246776 績供烤1 · 5 - 2小時之方$推;^千ff] 、 了方式如了111化1本實❹m以環氧樹脂 為例,在1 35攝氏度之製程溫度下饵 ,、烤2小蚪,使軟性膠體層 完全固化。 施例係如 此外本發明揭露之發光裝置之製造方法另―實 弟7圖所示。 1芩閱弟7圖,在實施如第3圖之降溫步驟後,本實施例 係採取直接使榮光粉132附著於表面層ιΐ2上,舉例而言,首 先可長:供一谷器120 ’以使私去主道祕甘 X光半士體基板100位於容器120 令’然後填充該歧整弁格〗q 9认〜 —萤九私132於谷器120内,以使該些螢光粉 附著於表面層Π 2上。 接著提供-磨合裝置14。,例如麼合桿,然後以屢合桿14〇 擠壓該些螢光粉而佶 吏之瓜a於表面層112,接續藉由升溫以完 全固化表面層112及内部層114,進而避免螢光粉粒脫落。 由於螢光粉可以均句歲合於軟性膠體層之表面層中,因此 可以控制螢光粉之均句 σ . ^ 及山度’且在元全固化後,螢光粉之 均勻性及始、度仍然可以維持。 雖然本發明P w + 車父么貫施例揭露如上,然其並非用以限 疋本發明’任何孰習士4士篇 …自此技藝者,在不脫離本發明之精神和範圍 内,當可作4匕每夕西知μ 二开之更動與潤飾,因此本發明之保護範圍當視後 附之申請專利範圍所界定者為準。 上獨776 圖 【圖式簡單說明】 第1圖顯示根據本發明 之實施例中,發光半導體基板示意 第2圖顯示根據本告 意圖。 只轭例中,塗佈液態黏著層之示 第3圖顯示根據本發 徐 意圖。 月之貝知例中,烘烤液態黏著層之示 體基板 於二圖顯示根據本發明之實施例中,置入發光半導 於谷态中之示意圖。 第5圖顯示根據本發明 光中H 月之心例中,去除容器之溶劑使螢 先私附者於發光半導體基板之示意圖。 第6圖顯示根據本發明之實 暇辦恩, 只施例中,使螢光粉嵌合於軟性 ♦體層之表面層之示意圖。 第7圖顯示根據本發明之另 貝苑例中,藉壓合螢光粉使 之肷合於軟性膠體層之表面層之示意圖 膠於發光 第8圖顯示先前技術塗佈一含螢光粉之透光 極體表面之示意圖。 【主要元件符號說明】 發光半導體基板〜100 ; 10 1246776 液態黏著層〜110 ; 表面層〜112 ; 内部層〜114 ; 溶劑〜134 ; 螢光粉〜132 ; 螢光液〜130 ; 容器〜120 ; 壓合裝置〜140。1246776 IX. Description of the Invention: [Technical Field] The present invention relates to a method of fabricating a light-emitting device, and more particularly to a method of fabricating a light-emitting diode. [Prior Art], the white light diode sold in the market is attached to a fluorescent layer on the surface of the blue diode chip, and when the blue light diode emits blue light, it will be combined with the fluorescent glue. The phosphors in the layer are mixed by the yellow light emitted by the blue light to form white light. ▲If the steps in the previous figure are not the same, the first step is to mix the fluorescent powder into the paste-like epoxy tree, such as the light-emitting kick, and then apply it to the light-emitting two. The surface of the polar body 10. However, since the paste-like epoxy resin and the like have a mobility during the curing process, the fluorescent powder often cannot maintain a uniform distribution state in the transparent adhesive after coating, and since the density cannot be controlled The white light emitted by the light-emitting diode is bluish. SUMMARY OF THE INVENTION In view of the above, the present invention provides a method for fabricating a light-emitting device, comprising: providing a light-emitting semiconductor substrate; forming a liquid adhesion layer on the light-emitting semiconductor substrate; and heating to a first process temperature to bleed the liquid adhesive layer, Forming a liquid adhesive layer - a soft colloid layer composed of a surface layer and an inner layer, wherein the surface layer I is hardened to the south layer, but the surface layer is still viscous, and the temperature is lowered to - lower than the first garment spear One of the first process temperature; a phosphor containing 1246776 of solvent and phosphor powder is provided; the light emitting semiconductor substrate is placed in the phosphor; the solvent is removed at the second process temperature to cause the phosphor to adhere On the surface layer; the phosphor powder is brought into the surface layer; and the temperature is raised to a third process temperature higher than the second process temperature to completely cure the surface layer and the inner layer. Another object of the present invention is to provide a method for fabricating a light-emitting device, comprising: providing a light-emitting semiconductor substrate; forming a liquid adhesive layer on the light-emitting semiconductor substrate to 'heat up to a first process temperature to bake the liquid adhesive layer to make the liquid adhere The layer forms a soft colloid layer composed of a surface layer and an inner layer, wherein the surface layer is harder than the inner layer 'but the surface layer is still viscous; the temperature is lowered to a temperature lower than the first process temperature - the second process Temperature; attaching the phosphor powder to the surface layer; pulling the phosphor powder to the surface layer; and heating to a third process temperature higher than the second process temperature to completely cure the surface layer and the inner layer . In the preferred embodiment of the present invention, the liquid adhesive layer may be one of an epoxy resin, a silicone resin, or a sol. In terms of process temperature, the first-process temperature range is selected to be 60-90 degrees Celsius or the preferred temperature is at 9M degrees Celsius. The second process temperature range is selected from 35 to 45 degrees Celsius, or preferably the temperature range is 40 degrees Celsius. The third process temperature range is selected from 12 (] U0 145 degrees Celsius, or preferably the temperature range is 135 degrees C. In addition to the preferred embodiment of the present invention, "the choice of λ is also exemplified in the case where the agent contains alcohol Or, in the step of attaching the phosphor powder to the surface layer, the soiling method comprises: providing a container; positioning the light emitting semiconductor substrate in the container; and filling the light Powdered in the container to adhere the phosphor powder to the surface layer. wherein the step of embedding the phosphor powder on the surface layer is performed in comparison with each of the soils: a providing-coupling device; The repeating device presses the phosphor powder and then combines it with the surface layer. [Embodiment] The embodiment of the method for manufacturing the light-emitting device disclosed in the present invention is as shown in the sixth figure. Please refer to FIG. A light-emitting semiconductor substrate 1 is used, and in the present embodiment, a light-emitting diode that emits blue light is taken as an example. Next, referring to FIG. 2, a liquid adhesive layer 110 containing no phosphor powder is formed on the light-emitting semiconductor. On the substrate 1QG, but in this implementation The medium liquid adhesive layer may be epoxy resin, stellite or sol (gel), and is formed by coating on the surface of the light emitting diode which emits blue light. Next, please refer to Fig. 3, baking The liquid adhesive layer 11 is formed so that the liquid adhesive layer is formed - a soft colloid layer composed of the surface layer 112 and the inner layer 114, wherein the surface layer 112 is hardened more than the inner layer 114, but the surface layer ι 2 is still viscous. For example, in the present embodiment, the temperature is raised to a range of 6 to 9 deg C. The baking is about 30-50 minutes. For example, in the case of an epoxy resin, the preferred processing strip 1246776 is used to make the surface layer gradually firmware 80. Baking at -90 degrees Celsius for about 4 minutes but still retaining its viscosity. Then, in order to avoid the above-mentioned soft colloidal agglomeration due to too fast curing, it must be warmed to 35-45 degrees Celsius to slow down the soft gel% oxygen resin. For example, the preferred process condition is a cooling and cooling process. In this embodiment, the curing speed of the falling layer is taken, for example, to 40 degrees C. Next, referring to FIG. 4, a fluorescent liquid composed of a solvent 134 and a fluorescent powder 132 is provided. 13〇 So that the light-emitting semiconductor substrate (10) is located in the glare liquid 13〇, for example, 5' can select the light-emitting diode that emits blue light to be placed at the bottom of the container (10) and then pour the fluorescent liquid, and in this embodiment, the alcohol is selected as the alcohol The solvent is, for example, a fluorescent powder of an excitation light such as YAG or TAG mixed with ethanol. Then, referring to Fig. 5, a solvent 134 such as ethanol is removed to adhere the phosphor powder 132 to the surface layer 112±, for example, the above-mentioned - 仏 Celsius process temperature to remove solvent 134 such as ethanol, until the ethanol is evaporated, the phosphor powder 132 is attached to the surface layer 112, and under the process temperature, the surface layer is still not fully cured and has viscosity Please refer to FIG. 6 to fit the phosphor powder 132 to the surface layer 112 having viscosity, for example, by extrusion, so that the phosphor particles can be uniformly fitted into the surface layer 112 without Will flow freely. Then 'by warming up to fully cure the surface layer 112 and the inner layer 114 and avoid detachment of the phosphor particles, for example, it is possible to choose 1246776 for 12 - 2 - 2 hours at 12 degrees - 145 degrees Celsius. $ push; ^ thousand ff], the way is 111, 1 real ❹ m with epoxy resin as an example, bait at a process temperature of 1 35 degrees Celsius, baked 2 hours, so that the soft gel layer is fully cured. The embodiment is as shown in Fig. 7 in addition to the manufacturing method of the light-emitting device disclosed in the present invention. 1芩读弟图7, after performing the cooling step as shown in Fig. 3, this embodiment adopts direct attachment of glory powder 132 to the surface layer ι2, for example, firstly: Make the private main road secret Gan X-ray half-body substrate 100 located in the container 120 and then 'fill the ambiguity 〗 〗 〖q 9 ~ ~ 九 九 private 132 in the bar 120 to make the fluorescent powder On the surface layer Π 2 . A running-in device 14 is then provided. For example, the rod is pressed, and then the phosphor powder is pressed by the overlap rod 14 佶吏 and the melon is pressed on the surface layer 112, and then the surface layer 112 and the inner layer 114 are completely cured by the temperature rise, thereby avoiding the fluorescence. The powder falls off. Since the phosphor powder can be mixed into the surface layer of the soft colloid layer, it is possible to control the uniformity of the phosphor powder σ. ^ and the mountain degree, and after the solidification of the element, the uniformity and the beginning of the phosphor powder The degree can still be maintained. Although the present invention has been disclosed above, it is not intended to limit the invention to any of the 'studies of the singularity of the singularity of the singularity of the present invention, without departing from the spirit and scope of the present invention. The scope of protection of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a light-emitting semiconductor substrate according to an embodiment of the present invention. FIG. 2 is a view showing the present invention. In the yoke example, the application of the liquid adhesive layer is shown in Fig. 3 to show the intention according to the present invention. In the example of Moon Bay, the exemplary substrate for baking the liquid adhesive layer is shown in the second figure, in which the luminescent semi-conducting is placed in the valley state according to an embodiment of the present invention. Fig. 5 is a view showing the removal of the solvent of the container in the case of the H-moon of the light according to the present invention, so that the ray is first attached to the light-emitting semiconductor substrate. Fig. 6 is a view showing the outline of the surface layer of the soft body layer in which only the phosphor powder is fitted in accordance with the practice of the present invention. Figure 7 is a schematic view showing the gel of the surface layer of the soft gel layer by pressing the phosphor powder in the case of another example according to the present invention. Schematic diagram of the surface of the light-transmitting electrode body. [Main component symbol description] Light-emitting semiconductor substrate ~100; 10 1246776 liquid adhesive layer ~110; surface layer ~ 112; inner layer ~ 114; solvent ~ 134; fluorescent powder ~ 132; fluorescent liquid ~ 130; container ~ 120; Pressing device ~140.

Claims (1)

1246776 十、申請專利範圍: 1. 一種發光裝置製造方法,包括: 提供一發光半導體基板; 形成一液態黏著層於該發光半導體基板上; 〜升m —製程溫度以烘烤該液態黏著I,使言亥液態謂占· 著層形成-由表面層及内部層構成之軟性勝體層,其中,該表. 面層之硬化程度高於該内部層,但該表面層仍具有黏滞性; 条/皿至於5玄第一製程温度之一第二製程溫度; 提供-由溶劑與螢光粉組成之#光液; · 使該發光半導體基板位於該螢光液中; 以該第二製程溫度去除該溶劑,使該些營光粉附著於該表 面層上; 使該些螢光粉嵌合於該表面層;及 升至w於該第一製程温度之一第三製程溫度以完全 固化該表面層及内部層。 士申明專利圍第1項所述之發光裝置製造方法,其 中,該液態黏著層為環氧樹脂、秒膠、或溶膠之一。、 ^如申請專利範圍第2項所述之發光裝置製造方法,其 、 中’該弟一製程溫度範圍在於60 —90攝氏度。 ' 士申明專利耗圍第2項所述之發光裝置製造方法,其 中’邊弟一製程溫度範圍在於80,攝氏度。 12 1246776 5·如申請專利範圍第2項所述之發光裝置製造方法,其 中’該第二製程溫度範圍在於35-45攝氏度。 6·如申請專利範圍第2項所述之發光裝置製造方法,其 中’該第二製程溫度範圍在於40攝氏度。 - 7·如申請專利範圍第2項所述之發光裝置製造方法,其 · 中’該第三製程溫度範圍在於120-145攝氏度。 8 ·如申請專利範圍第2項所述之發光裝置製造方法,其 義 中’該第三製程溫度範圍在於135攝氏度。 9_如申請專利範圍第1項所述之發光裝置製造方法,其 中’該溶劑係包含醇類。 10·如申請專利範圍第1項所述之發光裝置製造方法,其 中’該溶劑係包含乙醇。 11 · 一種發光裝置製造方法,包括: 書 提供一發光半導體基板; 形成-液態黏著層於該發光半導體基板上; ^升温至一第一製程溫度以烘烤該液態黏著層,使該液態黏 · # '成由表面層及内部層構成之軟性膠體層,其中,該表 面層之硬化程度高於該内部層,但該表面層仍具有黏滞性; 至低於D亥第一製程溫度之—第二製程溫度; 使該些螢光粉附著於該表面層上; 13 1246776 使4些螢光粉嵌合於該表面層;及 升溫至一高於該第二製程溫度之一第三製程溫度以完全 固化該表面層及内部層。 12_如申請專利範圍第丨丨項所述之發光裝置製造方法, 其中,該I態黏著層為環氧樹脂、石夕膠、或溶膠之… 13·如申請專利範圍第丨2項所述之發光裝置製造方法, 其中,該第一製程溫度範圍在於60-90攝氏度。 14·如申請專利範圍第12項所述之發光裝置製造方法, 其中,该第一製程溫度範圍在於8〇-9〇攝氏度。 I5·如申請專利範圍第12項所述之發光裝置製造方法, 其中,該第二製程溫度範圍在於35_45攝氏度。 16.如申請專利範圍第丨2項所述之發光裝置製造方法, 其中,該第二製程溫度範圍在於40攝氏度。 17·如申請專利範圍第丨2項所述之發光裝置製造方法, ”中,忒第二製程溫度範圍在於12〇 —丨45攝氏度。 18. 如申請專利範圍第12項所述之發光裝置製造方法, 一中,忒第二製程溫度範圍在於135攝氏度。 19. 如申明專利範圍第丨丨項所述之發光裝置製造方法, ,、中使,亥些螢光粉附著於該表面層上之步驟包括: 14 1246776 11 r 提供一容器; 使該發光半導體基板位於該容器中;及 填充該些螢光粉於該容器内,以使該些螢光粉附著於該表 面層上。 20·如申請專利範圍第19項所述之發光裝置製造方法, /、中使省些螢光粉嵌合於該表面層上之步驟包括: 提供一壓合裝置;及 乂忒£α衣置擠壓該些螢光粉而使之嵌合於該表面層。 參 151246776 X. Patent application scope: 1. A method for manufacturing a light-emitting device, comprising: providing a light-emitting semiconductor substrate; forming a liquid adhesive layer on the light-emitting semiconductor substrate; and increasing the process temperature to bake the liquid adhesive I The formation of the layer of liquid is composed of a surface layer and an inner layer of a soft layer, wherein the surface layer is harder than the inner layer, but the surface layer is still viscous; a second process temperature of one of the first process temperatures; providing: - a liquid liquid composed of a solvent and a fluorescent powder; - placing the light emitting semiconductor substrate in the fluorescent liquid; removing the light at the second process temperature a solvent for adhering the camping powder to the surface layer; fitting the phosphor powder to the surface layer; and raising to a third process temperature of the first process temperature to completely cure the surface layer And internal layers. The method of manufacturing a light-emitting device according to Item 1, wherein the liquid adhesive layer is one of an epoxy resin, a second gel, or a sol. The method of manufacturing a light-emitting device according to claim 2, wherein the process temperature range is 60-90 degrees Celsius. The manufacturing method of the illuminating device described in the second aspect of the patent, wherein the process temperature of the brother-in-law is 80 degrees Celsius. The method of manufacturing a light-emitting device according to claim 2, wherein the second process temperature range is 35-45 degrees Celsius. 6. The method of manufacturing a light-emitting device according to claim 2, wherein the second process temperature range is 40 degrees Celsius. The method of manufacturing a light-emitting device according to claim 2, wherein the third process temperature range is 120-145 degrees Celsius. 8. The method of manufacturing a light-emitting device according to claim 2, wherein the third process temperature range is 135 degrees Celsius. The method of producing a light-emitting device according to claim 1, wherein the solvent comprises an alcohol. The method of producing a light-emitting device according to claim 1, wherein the solvent comprises ethanol. 11 . A method of manufacturing a light-emitting device, comprising: providing a light-emitting semiconductor substrate; forming a liquid-adhesive layer on the light-emitting semiconductor substrate; and heating to a first process temperature to bake the liquid adhesive layer to make the liquid adhered # '成成的软胶层层 consisting of a surface layer and an inner layer, wherein the surface layer is harder than the inner layer, but the surface layer is still viscous; below the first process temperature of D Hai - a second process temperature; attaching the phosphor powder to the surface layer; 13 1246776 fitting four phosphor powders to the surface layer; and heating to a third process temperature higher than the second process temperature To completely cure the surface layer and the inner layer. The method of manufacturing the illuminating device according to the above aspect of the invention, wherein the I-state adhesive layer is an epoxy resin, a ligament, or a sol ... 13 as described in claim 2 The illuminating device manufacturing method, wherein the first process temperature range is 60-90 degrees Celsius. The method of manufacturing a light-emitting device according to claim 12, wherein the first process temperature ranges from 8 〇 to 9 〇 Celsius. The method of manufacturing a light-emitting device according to claim 12, wherein the second process temperature ranges from 35 to 45 degrees Celsius. 16. The method of fabricating a light-emitting device according to claim 2, wherein the second process temperature range is 40 degrees Celsius. 17. The method of manufacturing a light-emitting device according to item 2 of the patent application, wherein the second process temperature range is from 12 〇 to 45 ° C. 18. Manufacture of the illuminating device according to claim 12 The method, in the middle, the second process temperature range is 135 degrees Celsius. 19. The method of manufacturing the illuminating device according to the ninth aspect of the invention, wherein the luminescent powder is attached to the surface layer The steps include: 14 1246776 11 r providing a container; positioning the light emitting semiconductor substrate in the container; and filling the phosphor powder in the container to adhere the phosphor powder to the surface layer. The method for manufacturing a light-emitting device according to claim 19, wherein the step of causing the fluorescent powder to be embedded on the surface layer comprises: providing a pressing device; and These phosphor powders are fitted to the surface layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385818B (en) * 2006-06-07 2013-02-11 Osram Opto Semiconductors Gmbh Method of arranging powder layer on substrate and layer structure with at least one powder layer on substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385818B (en) * 2006-06-07 2013-02-11 Osram Opto Semiconductors Gmbh Method of arranging powder layer on substrate and layer structure with at least one powder layer on substrate

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