1246723 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關於一種半導體晶圓用硏磨墊及具備該硏 磨墊的半導體晶圓用硏磨複層體以及半導體晶圓的硏磨方 法。更詳細是有關於一種不會使硏磨性能降低，可透光的 半導體晶圓用硏磨墊及具備該硏磨墊的半導體晶圓用硏磨 複層體以及半導體晶圓的硏磨方法。本發明之半導體晶圓 用硏磨墊及具備該硏磨墊的半導體晶圓用硏磨複層體以及 半導體晶圓的硏磨方法，很適合作爲使用光學式終點檢查 裝置’ ~邊觀測硏磨狀態一邊施行半導體晶圓等硏磨的方 法。 【先前技術】 就半導體晶圓的硏磨而言，達到硏磨之目的，結束其 硏磨之硏磨終點的決定，是以經驗獲得的時間爲基準來施 行。但是構成被硏磨面的材質爲各式各樣，硏磨時間會因 該些而完全不同。此外，亦考慮到構成被硏磨面的材質， 今後會做各式各樣的變化。進而，就使用於硏磨上的硏磨 劑或硏磨裝置來看，亦爲同樣。因此，就各式各樣不同的 硏磨來看，從各個獲得所有硏磨時間的情形，效率非常差 。對此像是近年例如揭示於日本特開平第9- 7 9 8 5號公報 、特開第2000-326220號公報等，增進硏究有關於欲直接 觀測硏磨面之狀態，使用光學式的方法的光學式終點檢查 裝置及方法。 -5- 1246723 (2) 該光學式終點檢查裝置及方法中，一般例如像是揭示 於日本特開平第1 1 - 5 1 2 97 7號公報等，將可穿透終點檢查 用的光的硬質’且由均勻的樹脂所形成硏磨粒子的吸收、 不具有所謂輸送之本質上能力的觀測窗，形成在硏磨墊， 只通過該觀測窗來觀測硏磨面。 但是上記硏磨墊中，觀測窗本質上並不具有保持硏磨 劑、排出能力，故設置觀測窗會產生硏磨墊之硏磨性能降 低或不均句化很危險。此外，因此觀測窗增大（設置成環 狀等），或觀測窗數量增加困難。 【發明內容】 本發明係解決上記問題之發明，目的在於提供一種使 用光學式終點檢查裝置，於一邊觀測硏磨狀態一邊硏磨半 導體晶圓之際，不會降低硏磨性能，可穿透終點檢查用光 的半導體晶圓用硏磨墊及具備該硏磨墊的半導體晶圓用硏 磨複層體以及半導體晶圓的硏磨方法。 本發明人等針對應用於使用光學式終點檢查裝置的硏 磨的半導體晶圓用硏磨墊進行檢討時，發現像以往即使不 是以本質上具具保持硏磨劑、排出能力的硬質均勻的樹脂 ’若以具有透光性的透光性構件作爲觀測窗使用，均能確 保充分的透光性，更可檢查硏磨終點。此外，發現於構成 觀測窗的矩陣材料中分散、含有水溶性粒子，硏磨時具有 保持硏磨劑、排出能力。更發現即使其水溶性粒子的含有 量不滿5體積％ ，亦會發揮充分的硏磨性能，完成本發明 -6 - (4) 1246723 層、和在該支撐層的背面側，形成欲固定在硏磨裝置的固 定用層；上記透光性構件係含有：非水溶性矩陣材料、和 分散於該非水溶性矩陣材料中的水溶性粒子，該水溶性粒 子的含有量係上記非水溶性矩陣材料和上記水溶性粒子的 合計爲1 0 0體積％的情況，爲〇」體積％至9 0體積％爲 其特徵。 進而，本發明之半導體晶圓的硏磨方法，係使用上記 半導體晶圓用硏磨墊或上記半導體晶圓用硏磨複層體，來 硏磨半導體晶圓，且使用光學式終點檢查裝置來施行半導 體晶圓的硏磨終點的檢查爲其特徵。 以下詳細說明本發明。 本發明之半導體晶圓用硏磨墊（以下亦簡稱「硏磨墊 」）’係具備：備有貫通正背的貫通孔的硏磨墊用基體、 和嵌合於該貫通孔內的透光性構件，該透光性構件係含有 •非水溶性矩陣材料、和分散於該非水溶性矩陣材料中的 t溶性粒子’該水溶性粒子的含有量係該非水溶性矩陣材 料和該水溶性粒子的合計爲1 00體積％的情況，不滿1體 積％以上且5體積％爲其特徵。 上記「硏磨墊用基體」通常在其表面保持硏磨劑，硏 _屑更會暫時留滯。該硏磨墊用基體並不在意有無透光性 °此外’其平面形狀並未特別限定，例如可爲圓形、多角 形（四角形等）等。此外，其大小也未特別限定。 於硏磨墊用基體的表面，如上記於硏磨時保持硏磨劑 ’使硏磨劑暫時留滯爲佳。因此，具備有微細的孔（以下 -8- (5) 1246723 稱細孔）、溝或利用修整所形成的起毛等中的至少一種。 此外，該些亦可預先形成，亦可於硏磨時形成。因而，硏 磨墊用基體例如： 〔1〕具有：非水溶性矩陣材料（a)、和分散於該非水 溶性矩陣材料⑷中的粒子形狀、線形狀等水溶性構件⑻ 〔2〕具有：非水溶性矩陣材料（a) '和分散於該非水 溶性矩陣材料（a)中的空孔（發泡體）； 〔3〕試舉有··只由非水溶性矩陣材料所形成（非發 泡體），利用修整產生起毛等； 構成上〔 1〕至〔3〕的非水溶性矩陣材料（a)的材 料並未特別限定，可使用各種材料，不過特別是由容易形 成牛寸疋形狀及性狀，可賦予適度的彈性等來看，使用有機 材料爲佳。該有機材料可採用適於作爲構成後述之透光性 構作的非水溶性矩陣材料的各種材料。但構成硏磨墊用基 體的材料、和構成透光性構件的材料，可爲相同亦可爲不 同，更不在意有無透光性。此外，上記〔丨〕中的水溶性 構件（b)可採用由適用於後述之透光性構件的水溶性粒子 的各種材料所形成。上記〔2〕中，構成硏磨墊用基體及 透光性構件的非水溶性矩陣材料，均爲相同亦可，構成水 溶性構件和水溶性粒子的材料，均爲相同亦可。 此外，上記〔1〕的硏磨墊用基體中，水溶性構件（b) 的含有量係非水溶性矩陣材料（a)該水溶性構件（b)的合計 爲100體積％的情況，最好爲01至90體積％ ，較好爲 -9 - (6) 1246723 10至90質量％ ，更好爲12至60質量％ ，特好爲15至 45質量％ 。水溶性構件（b)的含有量不滿〇.1體積％ ，於 硏磨中等無法充形成細孔，有硏磨速度降低的情況。一方 面，若超過9 0體積％ ，非水溶性矩陣材料（a)中含有的水 溶性構件（b)，會有充分防止連鎖性膨潤或溶解困難的情況 ，將硏磨墊的硬度及機械性強度保持在適當値很困難。 上記「貫通孔」係爲貫通硏磨墊用基體之正背，且嵌 合透光性構件（但就硏磨墊之側端部來看，貫通孔其一部 分爲開放）。該貫通孔亦可利用透光性構作完全被塡充（第 1圖），此外亦可只一部分利用透光性構件被塡充。 上記貫通孔的形狀並未特別限定，例如其開口部的平 面形狀可爲圓形、扇形（將圓形或環形切割爲特定角度的 形狀）、多角形（三角形、正方形、梯形等）、環形等。此 外’開口部的角可爲尖的，也可爲帶有圓形的。進而，貫 通孔的斷面形狀例如可爲梯形等四角形、T字形、倒T字 形或其它形狀（參照第1僵至第8圖、第12圖及第13圖 ’而且各圖的上方爲硏磨面側）。上記貫通孔之一的大小 也未特別限定。開口部的平面形狀爲圓形時，以硏磨墊半 徑的2/3以下爲佳，具體上直徑以20mm以上爲佳。此外 ’開口部的平面形狀爲環狀時，以硏磨墊半徑的2/3以下 爲佳’具體上其寬幅以20mm以上爲佳。進而，開口部的 平面形狀爲四角形時，一邊以硏磨墊半徑的2/3以下爲佳 ’具體上以縱30mm以上且橫10mm以上佳。若上記貫通 孔比上記各例的大小還大，有確實穿透終點檢查用光等光 -10- (7) 1246723 線困難的情況。 而且，設置在硏磨墊用基體的貫通孔數量亦未特別限 定。 其次，上記「透光性構件」係含有：非水溶性矩陣材 料、和分散於該非水溶性矩陣材料中的水溶性粒子，具有 透光性，設置在硏磨墊的貫通內的構件。 該透光性材料的形狀並未特別限定。由於該透光性構 件的硏磨墊的硏磨面側的平面形狀，通常依賴貫通孔的形 狀，故與貫通孔孔的形狀相同。因而，透光性構件的平面 形狀，就上記貫通孔來看，可形成前述的圓形、多角形等 。此外，透光性構件的斷面形狀亦未特別限定，通常爲至 少一部分嵌合於貫通孔內的形狀。例如可爲如第1圖至第 8圖、第12圖及第13圖所示的斷面形狀。而且，就貫通 孔而言，在透光性構件各硏磨墊用基體之間，雖有間隙， 不過亦可沒有間隙爲佳。此外，有間隙時的長度，最好爲 2mm以下，較好爲1mm以下，更好爲0.5mm以下。 此外，該透光性構件並不如第1圖、第3圖、第12 圖及第1 3圖地薄壁化，即亦可爲與硏磨墊用基體相同的 厚度，不過亦可薄壁化。薄壁化是包括：將透光性構作的 厚度成比硏磨墊用基體的最大厚度還薄（例如第2圖、第 4圖、第5圖、第6圖及第8圖），以及穿透透光性構件 之光的一部分，就透光性構件本身而言，形成很薄（例如 第7圖等）的兩者。 光穿過透光性構件時，與穿透其光的強度的透光性構 -11 - (8) 1246723 件的厚度的兩倍成正比而衰減。因而，透光性構件形成薄 壁化，能飛躍性地提高透光性。例如就應用於光學式施行 終點檢查的硏磨的硏磨墊來看，即使該透光性構件爲與硏 磨墊用基體的其它部分相同的厚度，就連在終點的檢查很 難獲得充分強度的光時，亦可藉由薄壁化於終點檢查確保 充分的光強度。但該薄壁化的透光性構件，其厚度較子爲 〇.3mm以上。但上限通常爲3mm。不滿0.1mm有難以充 分確保透光性構件之機械性強度的情況。 而且，形成不具有因薄壁化所產生的貫通孔內的透光 性構件的部位的凹部，（參照第2圖），或透光性構件的凹 部（參照第7圖）亦可形成在硏磨墊用基體的正背任一側， 不過形成在背面側（非硏磨面側），就能不影響硏磨性能， 將透光性構件的厚度變薄。 上記透光性構件並未特別限定，可爲一個，亦可爲兩 個。此外，其配置亦未特別限定。例如具備一個透光性構 件時’透光性構件可如第9圖及第1 0圖地配置。更於具 備有兩個透光性構件時，亦可配置成同心圓狀（第1 1圖） 等。 此外，透光性構件所具有的透光性，通常透光性構件 的厚度爲2mm時，波長100至3000nm之間的任一波長的 穿透率爲0.1%以上，或波長100至3 00 Onm之間的任一 波長區域的積算穿透率爲0 . 1 %以上。該穿透率或積算穿 透率’可以不高於需要以上，通常爲50%以下，不過亦 可爲3 0 %以下，更可爲2 0 %以下。 (9) 1246723 而且，就使用光學式終點檢查裝置邊檢測硏磨終點邊 施以硏磨時的硏磨墊來看，特別是在作爲終點檢查用光的 使用頻度高的區域的400至8 OOnm的穿透液較高爲佳。 因此，厚度2mm時，波長400至8 0 0nm之間的任一波長 的穿透率爲0.1%以上（較好爲丨％以上、更好爲2%以上 、特好爲3%以上、通常爲90%以下）’或者波長400至 8 0 0 nm之間的任一波長區域的積算穿透率爲〇 · 1 %以上（較 好爲1 %以上、更好爲2 %以上、特好爲3 %以上、通常 爲90%以下）爲佳。但該穿透率或積算穿透率可以不高於 需要以上，通常爲20%以下，不過亦可爲10%以下，更 可爲5 %以下。 而且，上記穿透率，就厚度2mm的試驗片來看，使 用可測定特定波長之吸光度的UV吸光度計等裝置，並爲 當測定其波長的穿透率時的値。連上記積算穿透率，同樣 地亦能以積算所測定的特定波長區域的穿透率而求得。 若構成上記透光性構件的「非水溶性矩陣材料」（以 下簡稱矩陣材料）具有透光性（不在意有無可視光的穿透） ，其本身不必爲透明（包括半透明），不過透光性更高爲佳 ，更透明更好。因而，上記矩陣材料以單獨或組合可賦予 透光性的熱可性樹脂、熱硬化性樹脂、彈性體、橡膠等爲 佳。 上記熱可塑性樹脂試舉有··例如聚烯系樹脂、聚苯乙 烯系樹脂、聚丙烯系樹脂（聚）丙烯酸酯系樹脂等）、乙稀 酯樹脂（除了丙烯酸樹脂）、聚酯系樹脂、聚醯胺系樹脂' 1246723 (10) 氟樹脂、聚碳酸酯樹脂 '聚甲醛樹脂等。 上記熱硬化性樹脂試舉有：例如苯酚樹脂、環氧樹脂 、不飽和聚酯樹脂、聚氨基甲酸酯樹脂、聚氨基甲酸酯· 尿素樹脂、尿素樹脂、矽樹脂等。 上記彈性體試舉有：苯乙烯•丁二烯·苯乙烯嵌段共 聚物（S B S )、其氫化嵌段共聚物（S E B S )等苯乙烯系彈性體 、聚烯彈性體（TPO)、熱可塑性聚氨基甲酸酯彈性體（TPU) 、熱可塑性聚酯彈性體（TPEE)、聚醯胺彈性體（TPAE)、 二烯系彈性體（1，2 -聚丁二烯等）等之熱可塑性彈性體、 矽樹脂系彈性體、氟樹脂系彈性體等。 此外，上記橡膠試舉有：丁二烯橡膠、苯乙烯•丁二 烯橡膠、異戊二烯橡膠、異丁烯•異戊二烯橡膠、丙烯酸 橡膠、丙烯腈基•丁二烯橡膠、乙烯，丙烯橡膠、乙烯· 丙烯•二烯橡膠、矽橡膠、氟橡膠等。 上記材料亦可使用至少具有一種酸酐基、羧基、羥基 、環氧基、氨基等功能基等使其改性。經由改性來調節與 後述的水溶性粒子或硏磨粒、水系媒體等的親和性等。此 外，該些材料亦可組合兩種以上使用。 此外’上記各材料可爲交聯聚合物，亦可爲非交聯聚 合物。本發明之上記透光性構件的構成材料，係矩陣材料 之至少一部分（包括：由兩種以上之材料的混合物所形成 ’其至少一種的至少一部分爲交聯聚合物的情形、以及由 一種材料所形成，其至少一部分爲交聯聚合物的情形）爲 交聯聚合物較理想。 -14- (11) 1246723 矩陣材料的至一*部分具有父聯構造， 料獲得彈性恢復力。因而，能小幅抑制硏 磨墊的滑動應力的位移，於硏磨時及修整 料被過度拉伸，因塑性變形令細孔被埋置 止硏磨墊表面過度起毛。因此，硏磨時的 ，因修整的硏磨劑保持性之恢復也很容易 產生刮痕。 如上記的交聯聚合物試舉有：在可獲 熱可塑性樹脂、熱硬化性樹脂、彈性體及 氨基甲酸酯樹脂、環氧樹脂、聚丙烯樹脂 脂、乙烯酯樹脂（除聚丙烯樹脂外）等樹脂 (1，2-聚丁二烯）、丁二烯橡膠、異戊二 橡膠、丙烯腈•丁二烯橡膠、苯乙烯•丁 •丙烯橡膠、矽橡膠、氟橡膠、苯乙烯， 交聯的聚合物或聚乙烯、聚氟化亞乙烯_ 劑·紫外線、電子線等的照射）聚合物等 離子鍵聚合物等。 該些交聯聚合物中，亦可獲得充分的透 多硏磨劑的強酸或強鹼而言很安定，更因經 少的情形，所以甩交聯的1，2_聚丁二烯特好 該交聯的1，2—聚丁二烯可與丁二 烯橡膠等其它橡膠混合而使用。而且，上 單獨使用1，2—聚丁二烯。 此種至少一部分爲交聯聚合物的矩1246723 (1) Field of the Invention The present invention relates to a honing pad for a semiconductor wafer, a honing layer for a semiconductor wafer including the honing pad, and a semiconductor wafer. Grinding method. More specifically, it relates to a honing pad for a semiconductor wafer which does not reduce honing performance, and a honing method for honing a multilayer body and a semiconductor wafer for a semiconductor wafer having the honing pad. The honing pad for a semiconductor wafer of the present invention and the honing method for the semiconductor wafer using the honing pad and the honing method for the semiconductor wafer are suitable for use as an optical end point inspection device. In the state, a method of honing a semiconductor wafer or the like is performed. [Prior Art] In the case of honing of a semiconductor wafer, the decision to end the honing of the honing of the honing is performed based on the time obtained from the experience. However, the materials that make up the honed surface are various, and the honing time will be completely different. In addition, considering the materials that make up the honed surface, various changes will be made in the future. Further, the same applies to the honing agent or the honing device used for honing. Therefore, in terms of various honing, it is very inefficient to obtain all the honing time from each. In recent years, for example, it is disclosed in Japanese Laid-Open Patent Publication No. 9-79 8 5, and JP-A-2000-326220, etc., and there is an increase in the state of the honing surface, and an optical method is used. Optical end point inspection device and method. -5- 1246723 (2) In the optical end point inspection device and method, for example, it is disclosed in Japanese Laid-Open Patent Publication No. Hei No. 1 1 - 5 1 2 97 7 and the like, and the light for penetrating the end point inspection is hard. 'The absorption window of the honing particles formed by the uniform resin and the observation window which does not have the essential ability of the so-called conveyance are formed on the honing pad, and the honing surface is observed only through the observation window. However, in the above-mentioned honing pad, the observation window does not have the ability to maintain the honing agent and the discharge capacity. Therefore, it is dangerous to set the observation window to cause the honing performance of the honing pad to be reduced or uneven. In addition, the observation window is increased (set to a ring shape, etc.), or the number of observation windows is increased. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the invention is to provide an optical end point inspection device capable of puncturing a semiconductor wafer while observing a honing state without lowering the honing performance and penetrating the end point. A honing method for a semiconductor wafer for polishing light, a honing layer for a semiconductor wafer including the honing pad, and a honing method for a semiconductor wafer. When the inventors of the present invention reviewed the honing pad for honing semiconductor wafers using an optical end point inspection device, it was found that, as in the prior art, it is not essential to have a hard uniform resin that retains the honing agent and discharge ability. 'When a translucent member having light transmissivity is used as an observation window, sufficient light transmittance can be ensured, and the end point of honing can be checked. Further, it was found that the matrix material constituting the observation window was dispersed and contained water-soluble particles, and the honing agent and the discharge ability were maintained during honing. Further, it has been found that even if the content of the water-soluble particles is less than 5% by volume, sufficient honing performance is exerted, and the layer of the present invention -6 - (4) 1246723 is formed, and on the back side of the support layer, it is intended to be fixed in the crucible. a fixing layer for a grinding device; the above-mentioned light transmissive member contains: a water-insoluble matrix material; and water-soluble particles dispersed in the water-insoluble matrix material, the content of the water-soluble particles is marked with a water-insoluble matrix material and In the case where the total of the water-soluble particles is 100% by volume, it is characterized by 〇% by volume to 90% by volume. Further, in the honing method of the semiconductor wafer of the present invention, the semiconductor wafer is honed using the honing pad for the semiconductor wafer or the honing layer for the semiconductor wafer, and the optical end point inspection device is used. The inspection of the end point of the honing of the semiconductor wafer is characterized. The invention is described in detail below. The honing pad for a semiconductor wafer of the present invention (hereinafter also referred to as "honing pad") has a base for a honing pad provided with a through hole penetrating the front and a light permeable to the through hole. The light transmissive member contains a water-insoluble matrix material and t-soluble particles dispersed in the water-insoluble matrix material. The content of the water-soluble particles is the water-insoluble matrix material and the water-soluble particles. In the case of a total of 100% by volume, less than 1% by volume and 5% by volume are characteristic. The above-mentioned "base for honing pad" usually maintains a honing agent on its surface, and the swarf swarf is temporarily retained. The substrate for the honing pad is not intended to have a light-transmitting property. Further, the planar shape thereof is not particularly limited, and may be, for example, a circular shape, a polygonal shape (a square shape or the like). Further, the size thereof is also not particularly limited. It is preferable to keep the honing agent on the surface of the base for the honing pad as described above during the honing. Therefore, at least one of fine pores (hereinafter referred to as -8-(5) 1246723 pores), grooves or fluffs formed by trimming, and the like are provided. In addition, these may also be formed in advance or may be formed during honing. Therefore, the substrate for the honing pad has, for example, [1] having a water-insoluble matrix material (a), and a water-soluble member (8) such as a particle shape or a line shape dispersed in the water-insoluble matrix material (4): a water-soluble matrix material (a) 'and a void (foam) dispersed in the water-insoluble matrix material (a); [3] a sample which is formed only of a water-insoluble matrix material (non-foaming) The material of the water-insoluble matrix material (a) constituting the above [1] to [3] is not particularly limited, and various materials can be used, but in particular, it is easy to form a shape and It is preferable to use an organic material in view of properties such as moderate elasticity. The organic material may be various materials suitable as a water-insoluble matrix material constituting a light-transmitting structure to be described later. However, the material constituting the substrate for the honing pad and the material constituting the light-transmitting member may be the same or different, and are not intended to have light transmittance. Further, the water-soluble member (b) in the above [丨] can be formed of various materials which are water-soluble particles which are applied to a light-transmitting member to be described later. In the above [2], the water-insoluble matrix material constituting the substrate for the honing pad and the light-transmitting member may be the same, and the materials constituting the water-soluble member and the water-soluble particles may be the same. Further, in the substrate for the honing pad of the above [1], the content of the water-soluble member (b) is a water-insoluble matrix material (a), and the total of the water-soluble member (b) is preferably 100% by volume. It is 01 to 90% by volume, preferably -9 - (6) 1246723 10 to 90% by mass, more preferably 12 to 60% by mass, particularly preferably 15 to 45% by mass. The content of the water-soluble member (b) is less than 0.1% by volume, and it is impossible to form pores in the honing, and the honing speed may be lowered. On the other hand, if it exceeds 90% by volume, the water-soluble member (b) contained in the water-insoluble matrix material (a) may sufficiently prevent chain swelling or dissolution, and the hardness and mechanical properties of the honing pad. It is difficult to keep the strength constant. The "through hole" is a front surface that penetrates the base of the honing pad and is fitted with a light transmissive member (however, the through hole is partially opened in view of the side end portion of the honing pad). The through hole may be completely filled by the light transmissive structure (Fig. 1), or only a part of the through hole may be filled with the light transmissive member. The shape of the through hole is not particularly limited. For example, the planar shape of the opening portion may be a circular shape, a fan shape (a shape in which a circle or a ring is cut into a specific angle), a polygonal shape (a triangle, a square, a trapezoid, etc.), a ring shape, or the like. . Further, the angle of the opening may be pointed or circular. Further, the cross-sectional shape of the through hole may be, for example, a quadrangular shape such as a trapezoid, a T-shape, an inverted T-shape, or another shape (see the first to eighth, eighth, and thirteenth drawings) and the upper portion of each of the figures is honed. Face side). The size of one of the through holes is not particularly limited. When the planar shape of the opening is circular, it is preferably 2/3 or less of the radius of the honing pad, and the diameter is preferably 20 mm or more. Further, when the planar shape of the opening portion is a ring shape, it is preferable that the radius of the honing pad is 2/3 or less. Specifically, the width is preferably 20 mm or more. Further, when the planar shape of the opening portion is a square shape, it is preferably 2/3 or less of the radius of the honing pad. Specifically, it is preferably 30 mm or more in length and 10 mm or more in width. If the above-mentioned through-holes are larger than the size of each of the above-mentioned examples, it is difficult to pass the light at the end point inspection light -10- (7) 1246723. Further, the number of through holes provided in the base for the honing pad is not particularly limited. Next, the "translucent member" is a member which contains a water-insoluble matrix material and water-soluble particles dispersed in the water-insoluble matrix material, and has a light-transmitting property and is provided in the penetration of the honing pad. The shape of the light transmissive material is not particularly limited. Since the planar shape of the honing surface of the honing pad of the light transmissive member generally depends on the shape of the through hole, it has the same shape as that of the through hole. Therefore, the planar shape of the light transmissive member can be formed into a circular shape, a polygonal shape or the like as seen from the above-mentioned through hole. Further, the cross-sectional shape of the light transmissive member is not particularly limited, but is usually a shape in which at least a part of the light transmissive member is fitted into the through hole. For example, the cross-sectional shape as shown in Figs. 1 to 8 , 12 and 13 can be used. Further, in the through hole, although there is a gap between the bases for each of the honing pads of the light transmissive member, it is preferable that there is no gap. Further, the length at the time of the gap is preferably 2 mm or less, preferably 1 mm or less, more preferably 0.5 mm or less. Further, the light transmissive member is not thinned as shown in Figs. 1, 3, 12, and 13, or may be the same thickness as the base for the honing pad, but may be thinned. . Thinning includes: the thickness of the light transmissive structure is thinner than the maximum thickness of the substrate for the honing pad (for example, FIG. 2, FIG. 4, FIG. 5, FIG. 6, and FIG. 8), and A part of the light that penetrates the light-transmitting member forms a thin one (for example, FIG. 7 and the like) in terms of the light-transmitting member itself. When light passes through the light transmissive member, it is attenuated in proportion to twice the thickness of the light transmissive member -11 - (8) 1246723 which penetrates the intensity of the light. Therefore, the light transmissive member is formed into a thin wall, and the light transmittance can be drastically improved. For example, in the case of the honing honing pad applied to the optical end point inspection, even if the light transmissive member has the same thickness as the other portions of the lining pad substrate, it is difficult to obtain sufficient strength even at the end point inspection. In the case of light, it is also possible to ensure sufficient light intensity by thinning at the end point. However, the thinned light-transmitting member has a thickness of 〇. 3 mm or more. But the upper limit is usually 3mm. When it is less than 0.1 mm, it is difficult to sufficiently ensure the mechanical strength of the light transmissive member. Further, a concave portion that does not have a portion of the light transmissive member in the through hole due to the thinning is formed (see FIG. 2), or a concave portion of the light transmissive member (see FIG. 7) may be formed in the crucible. On either side of the front side of the base for the polishing pad, it is formed on the back side (non-honing side), and the thickness of the light transmissive member can be made thin without affecting the honing performance. The above-mentioned light transmissive members are not particularly limited and may be one or two. Further, the configuration thereof is also not particularly limited. For example, when a translucent member is provided, the translucent member can be disposed as shown in Fig. 9 and Fig. 10. Further, when two light transmissive members are provided, they may be arranged in a concentric shape (Fig. 1). Further, the translucent member has a light transmissive property, and when the thickness of the translucent member is 2 mm, the transmittance at any wavelength between 100 and 3000 nm is 0.1% or more, or the wavelength is 100 to 300 Å Onm. The integrated transmittance of any wavelength region between them is 0.1% or more. The transmittance or the integrated penetration rate may be not more than necessary, and is usually 50% or less, but may be 30% or less, and more preferably 20% or less. (9) 1246723 Moreover, the optical end point inspection device is used to detect the honing pad at the end point of the honing, especially in the region where the frequency of use as the end point inspection light is high, 400 to 800 nm. The higher the penetrating liquid is. Therefore, when the thickness is 2 mm, the transmittance at any wavelength between 400 and 800 nm is 0.1% or more (preferably 丨% or more, more preferably 2% or more, particularly preferably 3% or more, usually 90% or less) or an integrated transmittance in any wavelength region between 400 and 800 nm is 〇·1% or more (preferably 1% or more, more preferably 2% or more, particularly preferably 3) More than %, usually less than 90%) is preferred. However, the transmittance or the integrated transmittance may be not more than necessary, and is usually 20% or less, but may be 10% or less, or more preferably 5% or less. Further, in the case of the test piece having a thickness of 2 mm, a device such as a UV absorbance meter capable of measuring the absorbance at a specific wavelength is used, and the enthalpy when the transmittance of the wavelength is measured is used. Even if the total transmittance is calculated, the transmittance can be obtained by integrating the measured specific wavelength region. If the "water-insoluble matrix material" (hereinafter referred to as matrix material) constituting the above-mentioned light transmissive member has light transmissivity (not intending for the penetration of visible light), it does not have to be transparent (including translucent) itself, but is transparent. Higher sex is better, more transparent and better. Therefore, the above-mentioned matrix material is preferably a thermally conductive resin, a thermosetting resin, an elastomer, a rubber or the like which imparts light transmissivity alone or in combination. The above-mentioned thermoplastic resin is, for example, a polyolefin resin, a polystyrene resin, a polypropylene resin (poly) acrylate resin, a vinyl ester resin (other than an acrylic resin), a polyester resin, Polyamide resin ' 1246723 (10) fluororesin, polycarbonate resin 'polyoxymethylene resin, etc. The above-mentioned thermosetting resin is exemplified by a phenol resin, an epoxy resin, an unsaturated polyester resin, a polyurethane resin, a polyurethane resin, a urea resin, a enamel resin, and the like. The above-mentioned elastomers are styrene butadiene styrene block copolymer (SBS), styrene elastomer such as hydrogenated block copolymer (SEBS), polyene elastomer (TPO), and thermoplasticity. Thermoplasticity of polyurethane elastomer (TPU), thermoplastic polyester elastomer (TPEE), polyamine elastomer (TPAE), diene elastomer (1,2-polybutadiene, etc.) An elastomer, an anthraquinone-based elastomer, a fluororesin-based elastomer, or the like. In addition, the rubber test mentioned above: butadiene rubber, styrene butadiene rubber, isoprene rubber, isobutylene • isoprene rubber, acrylic rubber, acrylonitrile • butadiene rubber, ethylene, propylene Rubber, ethylene, propylene, diene rubber, silicone rubber, fluorine rubber, etc. The above material may be modified by using at least one functional group such as an acid anhydride group, a carboxyl group, a hydroxyl group, an epoxy group or an amino group. The affinity with water-soluble particles, honing particles, water-based media, etc., which will be described later, is adjusted by modification. Further, these materials may be used in combination of two or more. Further, each of the above materials may be a crosslinked polymer or a non-crosslinked polymer. The constituent material of the light transmissive member according to the present invention is a case where at least a part of the matrix material (including: formed of a mixture of two or more kinds of materials), at least a part of at least one of which is a crosslinked polymer, and a material It is preferred that the formed, at least a portion of which is a crosslinked polymer, is a crosslinked polymer. -14- (11) 1246723 The one-to-one part of the matrix material has a parent-linked structure, and the material is elastically restored. Therefore, the displacement of the sliding stress of the lining pad can be slightly suppressed, and the burrs are excessively stretched during honing, and the pores are buried by the plastic deformation to excessively fluff the surface of the honing pad. Therefore, when honing, it is easy to produce scratches due to the recovery of the repaired honing agent. The crosslinked polymers as described above are: in the form of thermoplastic resins, thermosetting resins, elastomers and urethane resins, epoxy resins, polypropylene resin resins, vinyl ester resins (except polypropylene resins). ) resin (1,2-polybutadiene), butadiene rubber, isoprene rubber, acrylonitrile butadiene rubber, styrene butadiene propylene rubber, ruthenium rubber, fluororubber, styrene, A polymer such as a polymer, a polyethylene, a polyvinylidene fluoride, an ultraviolet ray, an electron beam or the like, a polymer, a plasma bond polymer, or the like. Among these cross-linked polymers, it is also stable in obtaining a strong acid or a strong base which is sufficiently permeable to the honing agent, and more preferably, the ruthenium-crosslinked 1,2-polybutadiene is excellent. The crosslinked 1,2-polybutadiene can be used in combination with other rubbers such as butadiene rubber. Further, 1,2-polybutadiene was used alone. At least a portion of this is the moment of the crosslinked polymer
藉此可使矩陣材 磨時因施加於硏 時，防止矩陣材 。此外，也可防 硏磨劑保持性佳 ，進而亦可防止 得前記透光性的 橡膠之中，使聚 、不飽和聚酯樹 或二烯系彈性體 烯橡膠、丙烯酸 二烯橡膠、乙烯 異戊二烯橡膠等 ，交聯（經由交聯 。其它亦可使用 光性，對含有許 由吸水之軟化亦 〇 烯橡膠或異戊二 記矩陣材料亦可 陣材料，以JIS -15- (12) 1246723 K625 1爲基準，將由矩陣材料所形成的試驗片，甘 延伸日寸’殘留於延伸後的延伸率（以下簡稱「延伸 」）爲1 〇%以下。即，延伸後的試驗片的標線間合 可爲延伸則的標線間距離的兩倍以下。該延伸殘留 爲30%以下、較好爲1〇%以下、更好爲5%以下。 爲0 %以上。隨著延伸殘留率超過1 0 0 %而增大，硏 面更新時’會有從硏磨墊表面刮取或延伸的微細片 細孔的傾向。 而且’上記延伸殘留率係以j I s K 6 2 5 1「加硫 拉伸試驗方法」爲基準，試驗片形狀啞鈴狀3號形 速度5 00mm/分、試驗溫度8(rc，針對拉伸試驗延 片的情況下’從延伸而分割的試驗片的各個標線至 的合計距離，減去試驗前的標線間距離的延伸率。 於試驗溫度方面，實際的硏磨中，經由擺動達到的 8 0°C左右的緣故，可以該溫度進行。 上記「水溶性粒子」係分散於非水溶性矩陣材 此外，如前述，屬於於硏磨時可從外部供給的硏磨 由與水系媒體的接觸形成細孔的粒子。 該水溶性粒子的形狀未特別限定，不過通常更 形爲佳，甚至以球形爲佳。此外，與各個水溶性粒 的形狀更好。藉此所形成的細孔之性狀一致，就能 好的硏磨。 此外，該水溶性粒子的大小也未特別限定，不 粒徑爲0.1至500//m，理想爲0.5至200//ΓΠ、更 ^ 8 0 °C 殘留率 計距離 率理想 但通常 磨時及 易塞住 橡膠的 、拉伸 伸試驗 延伸部 而且， 溫度爲 料中。 劑或經 接近球 子一致 進行良 過通常 好爲1 -16- (13) 1246723 至1 5 Ο // m。若粒徑不滿ο . 1 // m，細孔的大小會小於硏磨 粒’會產生無法於細孔充分保持硏磨粒的情況，很不理想 。一方面，若超過5 0 0 # m，所形成的細孔大小會過大， 透光性構件的機械性強度及硏磨速度會有降低的傾向。 再者，上記水溶性粒子的透光性構件中的含有量，係 上記矩陣材料和上記水溶性粒子的合計爲1 00體積％的情 況，爲〇. 1體積％以上，且不滿5體積％ ，理想爲0.5體 積％以上，且不滿5體積％ ，特好爲1體積％以上，且 4 · 9體積％以下。上記水溶性粒子的含有量不滿〇 . 1體積 % ，會有未充分形成細孔，硏磨速度降低的傾向。一方面 ，即使不滿5體積％ ，還是具備充分的硏磨性能。 構成上記水溶性粒子的材料並未特別限定，可使用各 種材料。例如可使用有機系水溶性粒子及無機系水溶性粒 子。 上記有機系水溶性粒子可使用由：糊精、環糊精、甘 露糖醇、糖類（乳糖等）、纖維素類（羥基丙基纖維素、甲 基纖維素等）·澱粉、蛋白質、聚乙烯醇、聚乙烯吡咯烷 酮、聚丙烯酸、聚乙烯氧化物、水溶性之感光性樹脂、磺 化聚異戊二烯、磺化聚異戊二烯共聚合物等所形成。 此外，上記無機系水溶性粒子可使用由：乙酸鉀、硝 酸鉀、碳酸鉀、碳酸氫鉀、氯化鉀、臭化鉀、磷酸鉀、硝 酸鎂等所形成。 該些水溶性粒子係單獨或組合兩種以上而含有上記各 材料亦可。更可爲由特定材料所形成的一種水溶性粒子， -17- 1246723 (14) 亦可爲由不同的材料所形成的兩種以上的水溶性粒子。 此外，上記水溶性粒子係於硏磨時’僅露出於上記透 光性構件表面者會溶於水，存在於透光性構件內者未出現 ，不會吸濕及膨潤爲佳。因此，上記水溶性粒子亦可形成 由：抑制最外部的至少一部分吸濕的環氧樹脂、聚醯亞胺 、聚醯胺·聚矽酸鹽等所構成的外殼。 上記水溶性粒子除了形成細孔的功能以外，也具有將 透光性構件的壓入硬度與硏磨墊用基體等硏磨墊的其它部 分整合的功能。硏磨墊係由於增力附加於硏磨時的壓力， 提高硏磨速度，得到高平坦性，故肯氏D硬度爲硏磨墊 整體的3 5至1 0 0爲佳。可是只由矩陣材料的材質得到所 希望的肯氏D硬度困難的情形具多，此種情況下，含有 水溶性粒子而形成細孔以外，可將肯氏D硬度提高到與 硏磨墊的其它部分相同的程度。由此種理由來看，水溶性 粒子係以於硏磨墊內可確保充分的壓入硬度之中實體爲佳 〇 此種水溶性粒子於製造時分散在矩陣材料中的方法並 未特別限定，不過通常混合矩陣材料、水溶性粒子及其它 添加劑等而獲得。於該混合中，矩陣材料以易加工方式被 加熱混合’不過此時的溫度’以水溶性粒子呈固體爲佳。 藉由屬於固體的情形，不管與矩陣材料的相溶性，水溶性 粒子很容易以呈現前記理想的平均粒徑之狀態而分散。因 而，根據所使用的矩陣材料的加工溫度，來選擇水溶性粒 子的種類爲佳。 -18- (15) 1246723 此外’除了矩陣材料及水溶性粒子以外，亦含有藉由 :欲於製造時提高配合需要所添加的矩陣材料和水溶性粒 子的親和以及分散性的相溶化劑（酸酐基、羧基、羥基、 環氧基、噪唑啉基及氨基等改的聚合物、嵌段共聚合物及 無規共聚合物等）各種無離子系界面活性劑、及偶合劑等 或該些的剩餘差。 Μ不光是透光性構件，係於硏磨墊用基體等本發明之 硏磨墊整體，含有：自以往含在硏磨劑的硏磨粒、氧化劑 、鹼金屬之水氧化物及酸、pH調節劑、界面活性劑、刮 痕防止劑寺的至少·~•種。 該些以外，可含有塡充劑、軟化劑、氧化防止劑、紫 外線吸收劑、防靜電劑劑、滑劑、可塑劑等各種添加劑。 特別是塡充劑可採用：提高碳酸鈣、碳酸鎂、滑石、黏土 等剛性的材料、以及具備二氧化矽、氧化鋁、二氧化铈、 氧化鉻、二氧化鈦、二氧化錳、三氧化二錳、碳酸鋇等硏 磨效果的材料等。 一方面，於本發明之硏磨墊表面（硏磨面），係以提高 已使用過的硏磨劑的排出性之目的等，配合需要以特定的 形狀形成溝及點狀圖案。需要此種溝及點狀圖案的情況下 ’亦可於表面側形成自經由上記透光性構件的薄壁化所產 生的硏磨墊起的凹部。 並且，本發明之硏磨墊的形狀並未特別限定，不過通 常是依賴硏磨墊用基體的形狀。因而，可爲圓形（圓盤狀 等）、多角形（四角形等）等。四角形的情況下，可爲皮帶 •19- (16) 1246723 狀、滾輪狀等。此外，本發明之硏磨墊的大小也未別限定 ’不過例如爲圓盤狀的情況下，直徑爲5 0 0〜9 0 0 m m。 再者’本明細書中所謂「硏磨劑」乃意味至少含有硏 磨粒的水系分散體，不過於硏磨之際，從外部供給的亦可 爲硏磨劑，此外，亦僅爲是不含硏磨粒等的水系媒體。只 供給水系媒體的情況下，例如可藉由在硏磨的過程混合自 硏磨墊內排放的硏磨粒等和水系媒體，形成硏磨劑。 此外，本發明的硏磨墊，乃如第1 2圖及第1 3圖所示 ，在與其硏磨面相反面的背面側（非硏磨面），具備有欲將 硏磨墊固定在硏磨裝置的固定用層13，可爲其它本發明 的硏磨墊。該固定用層只要可固定硏磨墊本身即可，並未 特別限定。 該固定用層1 3可爲例如使用雙面膠帶（即具備有：在 接著劑層1 3 1和形成最表層的剝離層丨3 2。）所形成的層 、利用塗佈接著劑等所形成的接著劑層i 3 1等。可在利用 塗佈接著劑所形成的接著劑層的最表層，設置剝離層1 3 2 〇 就構成該些固定用層的材料而言，並未特別限定，可 使用丙嫌酸系、合成橡膠系等熱可塑性型、熱硬化型、光 硬化型等。巾售的g式舉有· 3M公司製#442、積水化學公 司製#5511及積水化學公司製#5516等。 連該些固定用層中’使用雙面膠帶所形成的層，事先 具有剝離層爲佳。此外，無論是那一個固定用層都具備有 剝離層，接著劑層一直保護到使用時，於使用時除去該剝 -20 - (17) 1246723 離層，具有充分的接著力，就可將硏磨墊輕易地固定在硏 磨裝置。 此外，固定用層係構成固定用層的材料本身之透光性 並未特別限定。構成固定用層的材料不具透光性的情況， 或具透光性的情況，可在對應於透光性構件的 部位設置貫通孔等。該貫通孔可比透光性構件的面積 還大或小，並且亦可爲相同的面積。貫通孔比透光性構件 還，如第12圖及第13圖所示，以覆蓋硏磨墊用基體和透 光性構件之接合的部分的方式所形成的情況下，即使在硏 磨墊用基體和透光性構件之間，具有間隙，也能防止硏磨 劑等滲漏到背面側。此外，特別是藉由在固定用層設置貫 通孔，就能防止欲測定透光度的感測部或產生透過光的部 位等受到污損。因此，特別是不在透過光的通過路形成固 定用層爲佳。 並且，形成以雙面膠帶所形成的固定用層的情況下， 事先在雙面膠帶的特定位置設置貫通孔。形成該貫通孔的 方法，並未特別限定，例如試舉有：使用雷射切割的方法 、或以冲孔刀冲孔的方法等，不過並不限於該些方法。再 者，使用雷射切割的方法，亦可在使用雙面膠帶設置固定 用層之後，設置貫通孔。 其它本發明的半導體晶圓用硏磨墊係具備有：具有貫 正、背面的貫通孔的硏磨墊用基體、和嵌合於上記貫通孔 內的透光性構件、和在上記硏磨墊用基體及上記透光性構 件中的至少上記硏磨墊用基體的背面側，形成欲固定於硏 -21 - (18) 1246723 磨裝置的固定用層，上記透光性構件係含有非水溶性矩陣 材料、和分散於該非水溶性矩陣材料中的水溶性粒子，該 水溶性粒子的含有量係上記非水溶性矩陣材料和上記水溶 性粒子的合計爲1 〇 0體積％的情況下，爲0. 1至9 0體積 %爲其特徵。 上記「硏磨墊用基體」依舊適用前記硏磨墊用基體。 上記「透光性構件」，除水溶性粒子的體積含量以外 ，依舊適用前記透光性構件的說明。該水溶性粒子的含有 量係矩陣材料和水溶性粒子的合計爲1 〇 〇體積％的情況下 ，爲〇 · 1至9 0體積％，理想爲0.5至6 0體積％ ，特好爲 1體積％以上且40體積％以下。上記水溶性粒子的含有 量不滿〇. 1體積％ ，會有細孔未充分形成，硏磨速度降低 的傾向。一方面，若超過90體積％ ，含在矩陣材料中的 水溶性粒子，會有難以充分防止連續續性膨潤或溶解的傾 向，很難將透光性構件的硬度及機械性強度保持在適當的 値。 上記「固定用層」依舊適用前記固定用層。此外，本 發明之其它硏磨墊整體（特別是硏磨墊用基體、透光性構 件等），係含有自以往即含於硏磨劑中的前記各種成份， 並且，含有前記其它各種的添加劑。此外，在其表面（硏 磨面）與前記同樣地以特定形狀形成溝及點狀圖案。並且 ，硏磨墊的形狀亦未限定，可形成與前記同樣的形狀及大 小。 本發明的半導體晶圓用硏磨複層體（以下簡稱「硏磨 -22· (19) 1246723 複層體」）係具備有：上記硏磨墊、和積層在該硏磨墊之 背面側的支撐層，於積層方向具有透光性爲其特徵。 上記「支撐層」係積層在硏磨墊之硏磨面相反的背面 側（非硏磨面側）的層。並不在意支撐層有無透光性’不過 如可使用具有與透光性構件之透光性同等或高於該透光性 的材料所形成支撐體，就可確保硏磨複層體的透光性（此 時可以形成缺口，亦不形成缺口）。並且，使用不具透光 性之支撐體的情況，利用缺口等方法使通過光的一部分可 確保硏磨複層位的透光性。 支撐層的形狀並未特別限定，平面形狀例如可爲圓形 、多角形（四角形等）等。並且通常可爲薄板狀。該支撐層 通常可形成與硏磨墊相同的平面形狀（具有利用缺口來確 保透光性的部位的情況，係除了該部位）。 並且，構成支撐層的材料並未特別限定，可使用各種 材料，不過特別是對特定形狀及性狀之成型很容易，由可 獲得適度彈性等來看，使用有機材料爲佳。該有機材料係 使用適於作爲構成前述之透光性構件的矩陣材料的各種材 料。 再者，構成支撐層的材料、和構成透光性構件及/或 硏磨墊用基體之矩陣材料的材料可爲相同，亦可爲不同。 此外，上記支撐層的數量未限定，可爲一層，亦可爲 兩層以上。並且，在積層兩層以上的支撐層的情況，各層 可爲相同，亦可爲不同。此外，該支撐層的硬度亦並未特 別限定，不過比硏磨墊軟質的爲佳。藉此，硏磨複層體整 -23- (20) 1246723 體具有充分的柔軟性，且對被硏磨面之凹凸而言，具有適 當的追隨性。 此外，在本發明之硏磨複層體可設置與上記硏磨墊情 況相同的固定用層。但該固定用層通常是形成在支撐層的 背面側（與硏磨面相反之面的這側）。 並且，在本發明之硏磨複層體的整體（特別是硏磨墊 用基體、透光性構件等），係與前記硏磨墊同樣地，含有 自以往即含於硏磨劑中的前記各種成份，並且可含有前記 其它各種的添加劑。此外，可在其表面（硏磨面）以特定形 狀設置前記溝及點狀圖案。並且，硏磨複層體的形狀及大 小亦未限定，可形成與前記硏磨墊同樣的形狀及大小。 其它本發明的半導體晶圓用硏磨複層體係具備有：具 有貫通正、背面的貫通孔的硏磨墊用基體、和嵌合於上記 貫通孔內的透光性構件、和積層在上記硏磨墊用基體及上 記透光性構件中的至少上記硏磨墊用基體的背面側的支撐 層、和在該支撐層的背面側，形成欲固定在硏磨裝置的固 定用層，上記透光性構件係含有非水溶性矩陣材料、和分 散在該非水溶性矩陣材料中的水溶性粒子，該水溶性粒子 的含有量係上記非水溶性矩陣材料和上記水溶性粒子的合 計爲100體積％時，爲0.1至90體積％爲其特徵。 上記「硏磨墊用基體」依舊適用前記硏磨墊用基體。 上記「透光性構件」依舊適用本發明之其它硏磨墊的 前記水溶性粒子。 上記「固定用層」依舊適用前記固定用層。 -24- (21) 1246723 此外，在其它本發明之硏磨複層體（特別是硏磨墊用 基體、透光性構件等），與前記硏磨墊同樣地，含有自以 往即於硏磨劑中的前記各種成份，並且可含有前記其它各 種的添加劑。此外，在其硏磨面以特定形狀設置前記溝及 點狀圖案。並且，硏磨複層體的形狀及大小亦未限定，可 形成與前記本發明之硏磨複層體相同的形狀及大小。 本發明之半導體晶圓的硏磨方法係使用上記說明的本 發明之硏磨墊或硏磨複層體來硏磨半導體晶圓，使用光學 式終點檢查裝置施行半導體晶圓的硏磨終點檢查爲其特徵 〇 上記「光學式終點檢查裝置」係從硏磨墊的背面側（ 非硏磨面側），通過透光性構件而朝硏磨面側透光，由來 自半導體晶圓等之被硏磨材料的硏磨面的反射光來檢查硏 磨終點的裝置。對其它測定原理，並未特別限定。 若根據本發明之半導體晶圓的硏磨方法，就不進行不 會令硏磨墊或硏磨複層體之硏磨性能降低的終點檢查。例 如’硏磨墊或硏磨複層體爲圓盤狀時，與該圓盤之中心同 心圓狀地將透光性構件設成環狀，藉由亦可一邊經常觀測 硏磨終點一邊硏磨。因而，就最適當的硏磨終點而言，可 確實地終止硏磨。 本發明之半導體晶圓的硏磨方法例如可使用如第J 4 圖所示的硏磨裝置。即具備有：可旋轉的定盤2、和可旋 轉及往縱橫方向移動的加壓頭3、和將硏磨劑在單位時間 平均一定量滴下到硏磨墊上的硏磨劑供給部5、和設置在 -25- 1246723 (22) 定盤下方的光學式終點檢查部6的裝置。 該硏磨裝置係在定盤上固定本發明的硏磨墊（硏磨複 層體）1，一方面，在加壓頭的下端面固定半導體晶圓4, 將該半導體晶圓一邊以特定壓力來推壓一邊以推壓的方式 抵接在硏磨墊。而且，從硏磨劑供給部一邊將硏磨劑平均 特定量的滴下到定盤上，一邊使定盤及加壓頭旋轉，使半 導體晶圓和硏磨墊擺動進行硏磨。 此外’在該硏磨之際’從光學式終點檢查部將特定波 長或波長區域的終點檢查用光R 1，從定盤（定盤本身具有 透光性，或一部分爲缺口 ’終點檢查用光就可穿透）的下 方穿透透光性構件1 2 ’向著半導體晶圓的硏磨面進行照 射。而且’該終點檢查用光會將從半導體晶圓的硏磨面反 射的反射光R2，利用光學式終點檢查部捕獲，就可從該 反射光的強度等一邊觀測硏磨面的狀況，一邊進行硏磨。 【實施方式】 以下根據實施例具體說明本發明。 [1 ]試驗用熱之製造 (1)透光性構件的製造 於後面將所父聯成爲矩陣材料的1，2 -聚丁二烯（J S R 股份有限公司製、品名「JSR RB 8 3 0」）97體積％、和作爲 水溶性粒子的/3 -環糊精（橫濱國際B AI 〇硏究所股份有 限公司製、品名「DEKISIPARU/3 — 1〇〇」）3體積％，利用 加熱到1 2 0 °C的捏合機加以混合。然後，添加以）1，2 — •26- (23) 1246723 聚丁二烯和々-環糊精之合計爲1 Ο 0質量部 質量部，進而混合過氧化二異丙苯（日本油 司製、品名「PERCUMYL— D」後，在冲壓 °C、2 〇分鐘使其交聯反應、成型，得到直徑 2.5mm的圓盤形狀的透光性構件。 (2)硏磨墊用基體之製造 於後面將所交聯成爲矩陣材料的1 ’ (JSR股份有限公司製、品名「JSR RB 8 3 0」 和作爲水溶性粒子的yS -環糊精（橫濱國際 股份有限公司製、品名「DEKISIPARU /3 — 1 %，利用加熱到1 2(TC的捏合機加以混合。 1，2—聚丁二烯和/3 —環糊精之合計爲1〇〇 的〇·8質量部，進而混合過氧化二異丙苯（ 有限公司製、品名「PERCUMYL— D」）後， 以17(TC、20分鐘使用交聯反應、成型，_ 、厚度2.5 mm的圓盤形狀的硏磨墊用基體。 [2] 穿透率之測定 在上記[1](1)所得到的透光性構件而言 光度計（日立製作所股份有限公司製、形式 來測定波長65 Onm的穿透率。其結果五次 透率爲3 0 %。 [3] 硏磨性能之測定 將僅由上記[1 ] (1)所得到的透光性構件 :所換算的0.8 月旨股份有限公 模具內以1 7 0 【6 0 c m、厚度 2 —聚丁二烯 )8 0體積％、 BAIO硏究所 00」）20體積 然後，添加以 質量部所換算 曰本油脂股份 在冲壓模具內 ，到直徑60cm ，使用UV吸 「U — 2010」） 的平均積算穿 所形成的硏磨 -27- (24) 1246723 墊安裝在硏磨裝置的定盤，在定盤轉數50 i*pm、硏磨劑流 量毎分鐘1 0 0 c c的條件下，進行熱氧化膜晶圓的硏磨。其 結果，硏磨速度爲每分鐘 9 8 0Α。此外，使用僅由上記 [1 ] (2)所得到的硏磨墊用基體所形成的硏磨墊，以同樣的 條件進行硏磨。其結果，硏磨速度毎分鐘1 01 〇 Α。 並且，使用不具有市售之透光性的發泡聚氨基甲酸酯 製硏磨墊（Rodel Nitta公司製、品名「IC1000」），以同樣 的條件進行硏磨。其結果，硏磨速度每分鐘95 0 A。 根據該些結果，與上記[1 ](1)同樣的，可得到將形成 特定大小的透光性構件，嵌合於設置在不具透光性的發泡 聚氨基甲酸酯製硏磨墊之一部分的貫通孔內所得到的本發 明之硏磨墊，即便使用本發明之觀測窗硏磨墊，來進行硏 磨的情況，得知其與不具透光性的發泡聚氨基甲酸酯製硏 磨墊的硏磨性能相比，並不遜色。 〔發明之效果〕 本發明之半導體晶圓用硏磨墊係具備有：具有貫通正 、背面的貫通孔的硏磨墊用基體、和嵌合於上記貫通孔內 的透光性構件，該透光性構件係含有：非水溶性矩陣材料 、和分散在該非水溶性矩陣材料中的水溶性粒子，該水^容 性粒子的含有量係上記非水溶性矩陣材料和上記水溶性半立 子的合計爲100體積°/。時，爲0.1體積％以上且不滿5體 積％，故可促進不會令硏磨性能降低的硏磨，效率良好白勺 進行光學式的終點檢查。此外，於硏磨工程全體中，不光 -28- (25) 1246723 是經常硏磨終點，還可光學式地觀察所有的硏磨狀況。 構成透光性構件的非水溶性矩陣材料的至少一部分爲 交聯聚合物時，可防止於硏磨時及整修時，埋置細孔。此 外’也可防止硏磨墊的表面（硏磨面）過度起毛。因而，硏 磨時的硏磨劑保持性佳，經由整修的硏磨劑保持性也很容 易恢復’並且，可防止於半導體晶圓等的硏磨面產生刮痕 〇 構成透光性構件的交聯聚合物爲所交聯的1，2 -聚 丁二烯時，含有上記交聯聚合物的效果可充分發揮，同時 還可確保充分的透光性。此外，對含有較多硏磨劑的強酸 或強鹼而言很安定，並且由於於因吸水的軟化也很少，故 作爲硏磨墊屬於耐久性優的。 透光性構件被薄壁化時，可更爲提高透光性。 透光性構件係特定波長之穿透率爲〇. 1 %以上，或特 定波長區域的積算穿透率爲0.1 %以上時，很適合此種波 長或波長區域的光學式觀察。 並且，藉由具備固定用層，可簡便且迅速地將硏磨墊 固定在硏磨裝置。此外，藉由具有透光性’亦不會阻礙具 有透光性構件的透光性。 若根據其它本發明之半導體晶圓用硏磨墊’即可進行 不會令硏磨性能降低的光學式的終點檢查。此外，就硏磨 工程全體而言，不光是經常光學式地觀察硏磨終點，還可 光學式地觀察整個硏磨狀況。此外，還可簡便且迅速地將 硏磨墊固定在硏磨裝置。 -29- (26) 1246723 若根據本發明之硏磨複層體，即可進行不會令硏磨性 ㉟降低的光學式的終點檢查。此外，就硏磨工程全體而言 ，不光是經常光學式地觀察硏磨終點，還可光學式地觀察 整個硏磨狀況。此外，硏磨複層體全體具有充分的柔軟性 ，可具備有對被硏磨面之凹凸的適當的追隨性。 並且’錯由具備有固定用層，可簡便且迅速地將硏磨 複層體固定在硏磨裝置。此外，藉由具有透光性，也不會 阻礙具有透光性構件的透光性。 若根據本發明的其它硏磨複層體，就可進行不會令硏 磨性能降低的光學式的終點檢查。此外，就硏磨工程全體 而言’不光是經常光學式地觀察硏磨終點，還可光學式地 觀察整個硏磨狀況。此外，硏磨複層體全體具有充分的柔 軟性’可具備有對被硏磨面之凹凸的適當的追隨性。此外 ，可簡便且迅速地將硏磨墊固定在硏磨裝置。 若根據本發明的硏磨方法，可促進不會令硏磨墊或硏 磨複層體之硏磨性能降低的硏磨，可效率良好的進行光學 式的終點檢查。此外，不光是硏磨終點，還可一邊光學式 地觀察整個硏磨狀況一邊促進硏磨。 〔產業上的可利用性〕 本發明之半導體晶圓用硏磨墊，特別有助於半導體裝 置的製造工程，例如可應用於：STI工程、形成Al、Cu 等金屬配線的嵌刻工程、形成使用 A1、C U、W等貫通孔 插銷之際的嵌刻工程、同時形成該些金屬配線和貫通孔插 -30- (27) 1246723 銷的雙向嵌刻工程、硏磨層間絕緣膜（氧化膜、Low 一 k、 BPSG等）的工程、硏磨氮化膜（TaN、TiN等）的工程、硏 磨多結晶矽、裸矽晶等的工程等。 【圖式簡單說明】 第1圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第2圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第3圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第4圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第5圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第6圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第7圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第8圖係表示硏磨墊用基體及透光性構件之形狀及各 個嵌插狀態之例的模式圖。 第9圖係本發明之硏磨墊之一例的平面圖。 第1 0圖係本發明之硏磨墊之其它例的平面圖。 第1 1圖係本發明之硏磨墊之一例的平面圖。 -31 - (28) 1246723 第1 2圖係具備固定用層的硏磨墊之一例的模式圖。 第1 3圖係具備固定用層的硏磨墊之其它例的模式圖 〇 第1 4圖係解說本發明之硏磨墊或硏磨複層體之硏磨 裝置的模式圖。 [主要元件符號說明]Thereby, the matrix material can be prevented from being applied to the matrix when it is applied to the substrate. In addition, it is also possible to prevent the retention of the honing agent, and to prevent the polyunsaturated polyester or the diene elastomer olefin rubber, the acryl rubber, and the vinyl. Pentadiene rubber, etc., cross-linked (via cross-linking. Others can also be used for photo-sensitization, for softening-containing decene rubber or isoprene matrix materials, which can be made of water, to JIS -15- (12 ) 1246723 K625 1 is the standard, and the test piece formed of the matrix material, the elongation of the stretched extension is less than 1% by weight after extension (that is, the extension of the test piece) The inter-line bonding may be twice or less the distance between the extended marking lines. The elongation of the extension is 30% or less, preferably 1% or less, more preferably 5% or less, and 0% or more. When it is more than 100%, it will increase, and there will be a tendency for fine pores to be scraped or extended from the surface of the honing pad when the surface is renewed. Moreover, the above-mentioned extension residual ratio is based on j I s K 6 2 5 1 The test method of the vulcanization tensile test method is based on the test piece shape dumbbell shape No. 3 speed Degree 5 00 mm / min, test temperature 8 (rc, for the tensile test piece, the total distance from the respective reticle of the extended test piece, minus the elongation of the distance between the lines before the test In terms of the test temperature, the actual honing can be carried out at a temperature of about 80 ° C which is achieved by the oscillation. The above-mentioned "water-soluble particles" are dispersed in the water-insoluble matrix material, and as described above, The honing which can be supplied from the outside during honing forms particles of fine pores by contact with the aqueous medium. The shape of the water-soluble particles is not particularly limited, but is generally more preferable, even spherical, and further, it is soluble in each water. The shape of the granules is better, and the properties of the pores formed thereby are uniform, and the honing is good. Further, the size of the water-soluble particles is not particularly limited, and the particle diameter is not 0.1 to 500 / / m, which is ideal. 0.5 to 200 / / ΓΠ, more ^ 80 ° C residual rate meter distance ratio is ideal, but usually grinding and easy to plug the rubber, tensile extension test extension and temperature is in the material. Agent or close to the ball Consistently It is often 1 -16- (13) 1246723 to 1 5 Ο // m. If the particle size is less than ο. 1 // m, the size of the pores will be smaller than that of the honing particles, which will not be able to fully maintain the pores. In the case of granules, it is not ideal. On the other hand, if it exceeds 500 Å, the pore size formed will be too large, and the mechanical strength and honing speed of the light transmissive member tend to decrease. The content of the water-soluble particles in the light-transmitting member is, in the case where the total of the matrix material and the above-mentioned water-soluble particles is 100% by volume, and is 1% by volume or more, and less than 5% by volume, and preferably 0.5% by volume. % or more, and less than 5% by volume, particularly preferably 1% by volume or more, and 4.9 % by volume or less. The content of the water-soluble particles is less than 〇. 1% by volume, the pores may not be sufficiently formed, and the honing speed tends to decrease. On the one hand, even if it is less than 5% by volume, it has sufficient honing performance. The material constituting the water-soluble particles is not particularly limited, and various materials can be used. For example, organic water-soluble particles and inorganic water-soluble particles can be used. The above organic water-soluble particles can be used: dextrin, cyclodextrin, mannitol, sugar (lactose, etc.), cellulose (hydroxypropyl cellulose, methyl cellulose, etc.), starch, protein, polyethylene An alcohol, polyvinylpyrrolidone, polyacrylic acid, polyethylene oxide, water-soluble photosensitive resin, sulfonated polyisoprene, sulfonated polyisoprene copolymer, or the like. Further, the above inorganic water-soluble particles can be formed by using potassium acetate, potassium nitrate, potassium carbonate, potassium hydrogencarbonate, potassium chloride, potassium odorate, potassium phosphate, magnesium nitrate or the like. These water-soluble particles may be contained alone or in combination of two or more kinds thereof. Further, it may be a water-soluble particle formed of a specific material, and -17-1246323 (14) may be two or more kinds of water-soluble particles formed of different materials. Further, the above-mentioned water-soluble particles are immersed in the case where only the surface of the above-mentioned light-transmitting member is exposed to water, and it is not present in the light-transmitting member, and moisture absorption and swelling are not preferable. Therefore, the above-mentioned water-soluble particles may be formed of an outer shell composed of an epoxy resin, a polyimide, a polyamine, a polyphthalate or the like which suppresses at least a part of the outermost moisture absorption. In addition to the function of forming pores, the water-soluble particles have a function of integrating the press-in hardness of the light-transmitting member with other portions of the honing pad such as the base for the honing pad. The honing pad is added to the pressure during honing to increase the honing speed and obtain high flatness. Therefore, the K hardness is preferably 35 to 100 of the honing pad. However, it is difficult to obtain the desired K-D hardness from the material of the matrix material. In this case, the water-soluble particles are formed to form pores, and the K-D hardness can be increased to other than the honing pad. Partially the same degree. For this reason, the water-soluble particles are suitable for ensuring sufficient indentation hardness in the honing pad. The method of dispersing the water-soluble particles in the matrix material at the time of production is not particularly limited. However, it is usually obtained by mixing a matrix material, water-soluble particles, and other additives. In this mixing, the matrix material is heated and mixed in an easy-to-process manner, but the temperature at this time is preferably such that the water-soluble particles are solid. By the case of being a solid, regardless of compatibility with the matrix material, the water-soluble particles are easily dispersed in a state of exhibiting an ideal average particle diameter. Therefore, it is preferred to select the type of water-soluble particles depending on the processing temperature of the matrix material to be used. -18- (15) 1246723 In addition to the matrix material and the water-soluble particles, it also contains a compatibilizing agent (anhydride) which is an affinity and dispersibility of the matrix material and the water-soluble particles to be added at the time of manufacture. a group of a non-ionic surfactant, a coupling agent, etc., or a modified polymer such as a carboxyl group, a hydroxyl group, an epoxy group, a oxazoline group or an amino group, a block copolymer, and a random copolymer. The remaining difference. The enamel pad of the present invention, which is not only a light transmissive member but also a substrate for a honing pad, and the like, contains: cerium particles, an oxidizing agent, an alkali metal hydroxide and an acid, pH, which have been conventionally contained in a honing agent. At least a variety of regulators, surfactants, and scratch-preventing agents. Other than these, various additives such as a chelating agent, a softening agent, an oxidation preventing agent, an ultraviolet ray absorbing agent, an antistatic agent, a lubricant, and a plasticizer may be contained. In particular, the chelating agent can be used to: increase the rigidity of calcium carbonate, magnesium carbonate, talc, clay, etc., and have cerium oxide, aluminum oxide, cerium oxide, chromium oxide, titanium dioxide, manganese dioxide, manganese trioxide, Materials such as strontium carbonate and other honing effects. On the other hand, in the surface (honing surface) of the honing pad of the present invention, it is necessary to form a groove and a dot pattern in a specific shape for the purpose of improving the discharge property of the used honing agent. When such a groove or a dot pattern is required, a recessed portion from the honing pad generated by thinning of the above-mentioned light transmissive member may be formed on the surface side. Further, the shape of the honing pad of the present invention is not particularly limited, but is usually a shape depending on the base for the honing pad. Therefore, it may be a circular shape (a disk shape or the like), a polygonal shape (a square shape or the like), or the like. In the case of a quadrangular shape, it can be a belt 19- (16) 1246723 shape, a roller shape, or the like. Further, the size of the honing pad of the present invention is not limited thereto. However, in the case of, for example, a disk shape, the diameter is 50,000 to 9000 m. Furthermore, the term "honing agent" in the present specification means an aqueous dispersion containing at least honing particles, but when it is honed, it may be a honing agent supplied from the outside, and it is also only An aqueous medium containing honing particles or the like. In the case where only the aqueous medium is supplied, for example, a honing agent can be formed by mixing a honing granule discharged from the honing pad or the like with an aqueous medium in a honing process. Further, the honing pad of the present invention has a back surface side (non-honed surface) opposite to the honing surface as shown in Figs. 2 and 13 and is provided with a honing pad to be fixed in the honing The fixing layer 13 of the device may be other honing pads of the present invention. The fixing layer is not particularly limited as long as it can fix the honing pad itself. The fixing layer 13 can be formed, for example, by using a double-sided tape (that is, a layer formed of the adhesive layer 133 and the peeling layer 形成3 2 forming the outermost layer), using a coating adhesive or the like. The adhesive layer i 3 1 and the like. The material for forming the fixing layer may be provided in the outermost layer of the adhesive layer formed by applying the adhesive, and the material for forming the fixing layer is not particularly limited, and an acrylic acid or synthetic rubber may be used. It is a thermoplastic type, a thermosetting type, a photocuring type, etc. The g-type sold by the towel is #442, manufactured by 3M Co., Ltd., #5511, Sekisui Chemical Co., Ltd., and #5516, manufactured by Sekisui Chemical Co., Ltd. It is preferable to have a peeling layer in advance in the layer formed of the double-sided tape in the fixing layers. In addition, no matter which one of the fixing layers is provided with a peeling layer, the adhesive layer is always protected to be used, and the peeling -20 - (17) 1246723 is removed from the layer at the time of use, and has sufficient adhesion to be used. The sanding pad is easily fixed to the honing device. Further, the light transmittance of the material for fixing the layer constituting the fixing layer is not particularly limited. When the material constituting the fixing layer is not translucent or has translucency, a through hole or the like may be provided in a portion corresponding to the translucent member. The through hole may be larger or smaller than the area of the light transmissive member, and may be the same area. Further, the through hole is formed by covering the portion of the base for the honing pad and the portion where the light transmissive member is joined, as shown in FIGS. 12 and 13 , even in the case of the honing pad. There is a gap between the base and the light transmissive member, and it is also possible to prevent the honing agent or the like from leaking to the back side. Further, in particular, by providing a through hole in the fixing layer, it is possible to prevent the sensing portion for measuring the transmittance or the portion where the transmitted light is generated from being stained. Therefore, it is preferable that the fixing layer is not formed by the passage of the light. Further, when a fixing layer formed of a double-sided tape is formed, a through hole is provided in advance at a specific position of the double-sided tape. The method of forming the through hole is not particularly limited. For example, a method using laser cutting or a method of punching with a punching knife may be used, but the method is not limited thereto. Further, by using a laser cutting method, a through hole may be provided after the fixing layer is provided using a double-sided tape. Further, the honing pad for a semiconductor wafer according to the present invention includes a base for a honing pad having a through hole having a straight front and a back surface, a light transmissive member fitted in the through hole, and a honing pad on the upper surface. A fixing layer to be fixed to the 硏-21 - (18) 1246723 grinding device is formed on the back side of the substrate for at least the honing pad of the substrate and the above-mentioned light transmissive member, and the light transmissive member is water-insoluble. a matrix material and a water-soluble particle dispersed in the water-insoluble matrix material, wherein the content of the water-soluble particle is 0% by volume in the total of the water-insoluble matrix material and the water-soluble particle as described above, and is 0. 1 to 90% by volume is characteristic. The above-mentioned "base for honing pad" is still applicable to the base for the honing pad. In the above-mentioned "translucent member", the description of the light-transmitting member described above is applied in addition to the volume content of the water-soluble particles. When the content of the water-soluble particles is 1 〇〇 vol% of the total of the matrix material and the water-soluble particles, it is 〇·1 to 90% by volume, preferably 0.5 to 60% by volume, particularly preferably 1 volume. % or more and 40% by volume or less. When the content of the water-soluble particles is less than 11% by volume, the pores are not sufficiently formed, and the honing speed tends to decrease. On the other hand, if it exceeds 90% by volume, the water-soluble particles contained in the matrix material tend to be insufficient to sufficiently prevent continuous swelling or dissolution, and it is difficult to maintain the hardness and mechanical strength of the light-transmitting member at an appropriate level. value. The above-mentioned "fixed layer" is still applicable to the pre-fixed layer. Further, the other honing pad of the present invention (particularly, a base for a honing pad, a light-transmitting member, and the like) contains various components previously contained in a honing agent, and contains various other additives as described above. . Further, a groove and a dot pattern are formed in a specific shape on the surface (the honing surface) in the same manner as the above. Further, the shape of the honing pad is not limited, and the same shape and size as the previous one can be formed. The honing layered body for a semiconductor wafer according to the present invention (hereinafter referred to as "the honing -22 (19) 1246723 multi-layered body") has a honing pad and a laminate on the back side of the honing pad. The support layer is characterized by light transmissivity in the lamination direction. The "support layer" is a layer on the back side (non-honing side) opposite to the honing surface of the honing pad. It does not care whether or not the support layer is transparent. However, if a support having a material equivalent to or higher than the light transmittance of the light transmissive member can be used, the light transmission of the honing layer can be ensured. Sex (the gap can be formed at this time, and no gap is formed). Further, when a support having no light transmissive property is used, the light transmittance of the lap layer can be ensured by a part of the passing light by a method such as a notch. The shape of the support layer is not particularly limited, and the planar shape may be, for example, a circular shape, a polygonal shape (a square shape, or the like). And usually it can be in the form of a thin plate. The support layer is usually formed in the same planar shape as the honing pad (in the case of a portion having a notch to ensure light transmittance, except for the portion). Further, the material constituting the support layer is not particularly limited, and various materials can be used. However, it is easy to form a specific shape and properties, and it is preferable to use an organic material in view of obtaining moderate elasticity. The organic material is a material which is suitable as a matrix material constituting the above-mentioned light-transmitting member. Further, the material constituting the support layer and the material constituting the matrix material of the light-transmitting member and/or the substrate for the honing pad may be the same or different. Further, the number of the support layers mentioned above is not limited, and may be one layer or two or more layers. Further, in the case of laminating two or more support layers, the layers may be the same or different. Further, the hardness of the support layer is not particularly limited, but it is preferably softer than the honing pad. Thereby, the honing and laminating body -23-(20) 1246723 body has sufficient flexibility and has appropriate followability to the unevenness of the honed surface. Further, in the honing layered body of the present invention, the same fixing layer as in the case of the above-mentioned honing pad can be provided. However, the fixing layer is usually formed on the back side of the support layer (the side opposite to the honing surface). Further, in the entire honing layered body of the present invention (particularly, a base for a honing pad, a light-transmitting member, etc.), similarly to the former honing pad, it contains a pre-recorded in the honing agent. A variety of ingredients, and can contain a variety of other additives. Further, a front groove and a dot pattern may be provided in a specific shape on the surface (honored surface). Further, the shape and size of the honing layer are not limited, and the shape and size of the honing pad can be formed in the same manner. The honing and overcoating system for a semiconductor wafer according to the present invention includes a base for a honing pad having a through hole penetrating the front and the back, and a light transmissive member fitted in the through hole, and a layered thereon. a support layer on the back side of at least the upper substrate for the honing pad of the substrate for polishing pad and the above-mentioned light transmissive member, and a fixing layer to be fixed to the honing device on the back side of the support layer, The functional member contains a water-insoluble matrix material and water-soluble particles dispersed in the water-insoluble matrix material, and the content of the water-soluble particles is such that the total of the water-insoluble matrix material and the water-soluble particles are 100% by volume. It is characterized by 0.1 to 90% by volume. The above-mentioned "base for honing pad" is still applicable to the base for the honing pad. The above-mentioned "translucent member" is still applied to the water-soluble particles of the other honing pads of the present invention. The above-mentioned "fixed layer" is still applicable to the pre-fixed layer. -24- (21) 1246723 In addition, in the other honing layered body of the present invention (particularly, a base for a honing pad, a light-transmitting member, etc.), similarly to the former honing pad, it is included in the honing The ingredients are pre-recorded with various ingredients and may contain various other additives as described above. Further, a front groove and a dot pattern are provided in a specific shape on the honing surface. Further, the shape and size of the honing layered body are not limited, and the same shape and size as those of the honing layered body of the present invention can be formed. The honing method of the semiconductor wafer of the present invention is to honing the semiconductor wafer using the honing pad or the honing layer of the present invention described above, and performing the honing end inspection of the semiconductor wafer using the optical end point inspection device. In the feature, the "optical end point inspection device" is transmitted from the back surface side (non-honing surface side) of the honing pad to the honing surface side by the light transmissive member, and is covered by a semiconductor wafer or the like. The device that grinds the honing surface of the material to check the end point of the honing. Other measurement principles are not particularly limited. According to the honing method of the semiconductor wafer of the present invention, the end point inspection which does not reduce the honing performance of the honing pad or the honing layer is not performed. For example, when the honing pad or the honing layer is in the shape of a disk, the translucent member is formed in a ring shape concentrically with the center of the disk, and the honing end can be observed while often observing . Thus, in the most appropriate end point of honing, the honing can be reliably terminated. The honing method of the semiconductor wafer of the present invention can be, for example, a honing device as shown in Fig. J 4 . That is, there are provided: a rotatable fixing plate 2, a pressing head 3 which is rotatable and movable in the longitudinal and lateral directions, and a honing agent supply portion 5 for dropping a honing agent onto the honing pad by a predetermined amount per unit time, and The device of the optical end point inspection unit 6 provided under the -25-1246323 (22) plate. The honing device fixes the honing pad (honing layer) 1 of the present invention on a fixed plate. On the one hand, the semiconductor wafer 4 is fixed on the lower end surface of the pressing head, and the semiconductor wafer is subjected to a specific pressure on one side. To push and press against the honing pad. Further, while the honing agent supply unit drops a predetermined amount of the honing agent onto the fixed plate, the fixing plate and the pressing head are rotated to oscillate the semiconductor wafer and the honing pad. In addition, 'at the time of honing', the end point inspection light R1 of a specific wavelength or wavelength region is taken from the optical plate by the optical end point inspection unit (the fixing plate itself has light transmissivity, or a part is notched) The penetrating light transmissive member 1 2 ' is penetrating toward the honing surface of the semiconductor wafer. In addition, the reflected light R2 reflected from the honing surface of the semiconductor wafer is captured by the optical end point inspection unit, and the state of the honing surface can be observed from the intensity of the reflected light. Honing. [Embodiment] Hereinafter, the present invention will be specifically described based on examples. [1] Manufacturing of test heat (1) Production of a light-transmitting member: 1,2-polybutadiene (JSR RB 8 3 0) manufactured by JSR Co., Ltd. 7% by volume, and 3 vol% of the water-soluble particles (manufactured by Yokohama International B AI Research Co., Ltd., product name "DEKISIPARU/3 - 1 〇〇"), and heated to 1 Mix at 20 °C with a kneader. Then, add 1,2 - •26- (23) 1246723 polybutadiene and 々-cyclodextrin to a mass of 1 Ο 0 mass part, and then mix dicumyl peroxide (manufactured by Nippon Oil Co., Ltd.) After the product name "PERCUMYL-D", it was cross-linked and pressed at a temperature of 2 ° C for 2 minutes to obtain a disc-shaped translucent member having a diameter of 2.5 mm. (2) The base for the honing pad was produced. 1 ' (JSR RB 8 3 0, manufactured by JSR Co., Ltd., and yS-cyclodextrin as a water-soluble particle (manufactured by Yokohama International Co., Ltd., product name "DEKISIPARU /3") - 1%, mixed by heating to 12 (TC kneader. 1,2 - polybutadiene and /3 - cyclodextrin total 1 〇〇 8 8 mass parts, and then mixed with peroxide 2 After cumene (manufactured by Ltd., product name "PERCUMYL-D"), a substrate for a honing pad of a disk shape having a cross-linking reaction, molding, _, and thickness of 2.5 mm was used at 17 (TC, 20 minutes). [2] The measurement of the transmittance is based on the photometer of the translucent member obtained in [1] (1) (Hitachi Manufacturing Co., Ltd. The transmittance of the wavelength of 65 Onm was measured by the system and the form. The result was five times of permeability of 30%. [3] Determination of honing performance The light-transmitting member obtained only by the above [1] (1) : The converted 0.8 month of the limited shares of the public mold is 1 70 [60 cm, thickness 2 - polybutadiene) 80% by volume, BAIO Research Institute 00") 20 volumes, then added to the quality department The honing -27- (24) 1246723 mat is converted to the fixing plate of the honing device in the stamping die, to the average of the diameter of 60cm, using UV suction "U - 2010"). The hot oxide film wafer is honed at a plate rotation number of 50 i*pm and a honing agent flow rate of 1 0 0 cc. As a result, the honing speed is 980 rpm. In addition, only The honing pad formed of the base for the honing pad obtained in the above [1] (2) was honed under the same conditions. As a result, the honing speed was 1 01 毎 minutes. The translucent foamed polyurethane honing pad (made by Rodel Nitta Co., Ltd., product name "IC1000") is sold in the same manner. As a result, the honing speed is 95 0 A per minute. According to these results, similarly to the above [1] (1), a translucent member having a specific size can be obtained and fitted to The honing pad of the present invention obtained in the through hole of one of the non-translucent foamed polyurethane honing pads is honed even by using the observation window honing pad of the present invention. It is known that it is not inferior to the honing performance of a non-transparent foamed polyurethane enamel pad. [Effects of the Invention] The honing pad for a semiconductor wafer according to the present invention includes a base for a honing pad having a through hole penetrating the front and the back, and a light transmissive member fitted in the through hole of the upper surface. The optical member comprises: a water-insoluble matrix material, and water-soluble particles dispersed in the water-insoluble matrix material, wherein the content of the water-capable particles is a total of the water-insoluble matrix material and the water-soluble semi-column It is 100 volume ° /. In the case of 0.1% by volume or more and less than 5% by volume, it is possible to promote the honing which does not deteriorate the honing performance, and the optical end point inspection is performed with good efficiency. In addition, in the entire honing project, not only -28-(25) 1246723 is the end point of frequent honing, but also optically observing all honing conditions. When at least a part of the water-insoluble matrix material constituting the light-transmitting member is a cross-linked polymer, it is possible to prevent the pores from being buried during honing and at the time of refurbishing. In addition, it prevents the surface of the honing pad (the honing surface) from excessively fluffing. Therefore, the honing agent retention property at the time of honing is good, and the honing agent retention property by the refurbishment is easily restored. Moreover, it is possible to prevent scratches on the honing surface of the semiconductor wafer or the like, and to constitute the translucent member. When the copolymer is a 1,2-polybutadiene which is crosslinked, the effect of containing the crosslinked polymer can be sufficiently exhibited, and sufficient light transmittance can be ensured. Further, it is stable to a strong acid or a strong base containing a large amount of a honing agent, and is excellent in durability as a honing pad because it has little softening due to water absorption. When the light transmissive member is thinned, the light transmittance can be further improved. When the transmissive member has a transmittance of a specific wavelength of 〇. 1% or more, or an integrated transmittance of a specific wavelength region of 0.1% or more, it is suitable for optical observation of such a wavelength or a wavelength region. Further, by providing the fixing layer, the honing pad can be easily and quickly fixed to the honing device. Further, the light transmittance is not hindered by the light transmissive member. According to the other honing pad for a semiconductor wafer of the present invention, an optical end point inspection which does not deteriorate the honing performance can be performed. In addition, as far as the honing work is concerned, it is not only the optical end point that is often observed optically, but also the entire honing condition can be observed optically. In addition, the honing pad can be easily and quickly fixed to the honing device. -29- (26) 1246723 According to the honing of the layered body of the present invention, an optical end point inspection which does not reduce the honing property 35 can be performed. In addition, as far as the honing project is concerned, it is not only the optical end point that is often observed optically, but also the entire honing condition can be observed optically. Further, the honing and multi-layered body has sufficient flexibility and can have appropriate followability to the unevenness of the surface to be honed. Further, since the fixing layer is provided, the honing layer can be easily and quickly fixed to the honing device. Further, by having light transmissivity, the light transmittance of the light transmissive member is not hindered. According to the other honing layered body of the present invention, an optical end point inspection which does not deteriorate the honing performance can be performed. In addition, as far as the honing work is concerned, it is not only the optical end point of the honing, but also the optical honing condition. Further, the honing and multi-layered body has sufficient flexibility to have appropriate followability to the unevenness of the surface to be honed. In addition, the honing pad can be easily and quickly fixed to the honing device. According to the honing method of the present invention, honing which does not reduce the honing performance of the honing pad or the honing layer can be promoted, and the optical end point inspection can be performed efficiently. In addition, it is not only the end point of the honing, but also optically observing the entire honing condition while promoting honing. [Industrial Applicability] The honing pad for a semiconductor wafer of the present invention is particularly useful for manufacturing a semiconductor device, and can be applied, for example, to STI engineering, forming a metal wiring such as Al or Cu, and forming Use the inlaying process of the through hole plugs such as A1, CU, W, etc., and simultaneously form the metal wiring and the through hole insertion -30-(27) 1246723 pin two-way inlaying process, honing the interlayer insulating film (oxide film, Low-k, BPSG, etc. engineering, honing of nitrided films (TaN, TiN, etc.), honing of polycrystalline germanium, bare twinning, etc. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an example of a shape of a base for a honing pad and a light transmissive member, and an example of each of the inserted states. Fig. 2 is a schematic view showing an example of the shape of the base for the honing pad and the shape of the light transmissive member, and the respective insertion states. Fig. 3 is a schematic view showing an example of the shape of the base for the honing pad and the shape of the light transmissive member, and the respective insertion states. Fig. 4 is a schematic view showing an example of the shape of the base for the honing pad and the shape of the light transmissive member and the state of the respective insertion. Fig. 5 is a schematic view showing an example of the shape of the base for the honing pad and the shape of the light transmissive member and the state of the respective insertion. Fig. 6 is a schematic view showing an example of the shape of the base for the honing pad and the shape of the light transmissive member and the state of each of the insertion states. Fig. 7 is a schematic view showing an example of the shape of the base for the honing pad and the shape of the light transmissive member, and the respective insertion states. Fig. 8 is a schematic view showing an example of the shape of the base for the honing pad and the shape of the light transmissive member, and the respective insertion states. Fig. 9 is a plan view showing an example of the honing pad of the present invention. Fig. 10 is a plan view showing another example of the honing pad of the present invention. Fig. 1 is a plan view showing an example of the honing pad of the present invention. -31 - (28) 1246723 Fig. 1 is a schematic view showing an example of a honing pad having a fixing layer. Fig. 13 is a schematic view showing another example of a honing pad having a fixing layer. Fig. 14 is a schematic view showing a honing device of the honing pad or the honing layer of the present invention. [Main component symbol description]
1 :硏磨墊（硏磨複層體） 2:定盤 3 :加壓頭 4 :半導體晶圓 5 :硏磨劑供給部 6 :光學式終點檢查部 Η :硏磨墊用基體1 : Honing pad (honing layer) 2: Fixing plate 3 : Pressing head 4 : Semiconductor wafer 5 : Grinding agent supply unit 6 : Optical end point inspection unit Η : Base for honing pad
1 2 :透光性構件 13:固定用層 1 3 1 :接著劑層 1 3 2 :剝離層 -32-1 2 : Translucent member 13: fixing layer 1 3 1 : adhesive layer 1 3 2 : peeling layer -32-