TWI244962B

TWI244962B - Method and apparatus for combining composite electroplating and surface abrasive machining

Info

Publication number: TWI244962B
Application number: TW93101744A
Authority: TW
Inventors: Yuang-Cherng Chiou; Rong-Tsong Lee
Original assignee: Univ Nat Sun Yat Sen
Priority date: 2004-01-27
Filing date: 2004-01-27
Publication date: 2005-12-11
Also published as: TW200524710A

Abstract

The present invention relates to a method and apparatus that combines composite electroplating and surface abrasive machining comprising a polishing device, a plating bath, a metal material and a power supply device. The polishing device has a composite electroplating layer to carry out the surface abrasive machining on a workpiece. The plating bath accommodates an electrolyte with a certain amount of abrasives, and the electrolyte is used to continuously electroplate the polisher in the polishing device to form the composite electroplating layer during the polishing process. The metal material is used to provide the metal ion required by the electroplating process. The power supply device is used to provide the electric current required by the composite electroplating process, and to cause the metal material to release the metal ions. The metal ions with the abrasives in the electrolyte commonly deposit on the polisher surface in the polishing device to form the electroplating layer. Hence, this invention has the ability to repair the worn surface of the polisher by itself, and to provide the fresh and sharp abrasives. In other words, it is not necessary to replace the polisher and to use the dressing equipment and supplies that the polisher remains an excellent machining performance.

Description

1244962 玖、發明說明：【發明所屬之技術領域】本發明係有關於一種表面磨粒加工之方法及裝置，特別是一種結合複合電鍍與表面磨粒加工之方法及裝置。【先前技術】習用之表面磨粒加工法區分為磨肖彳（gnnding)和研光 (lappmg)及拋光（p〇ilshmgp大類。磨削係使用_般所謂的砂輪或者磨石。研光係使用幾微米大小的磨粒和硬質磨盤。。拋光係使们微米以下的微細磨粒和軟質磨盤（亦稱抛光器（polisher))。磨削的加工機制係利用固㈣叫的切削作用，來加工工件表面。研光的加卫機(制: 利用游離磨粒（free gram)的犁割（乾式）與滾動（濕式）時的切削作用，來加工工件表面。而拋光的加工機制，除了游離磨粒的犁割作用外，尚包含磨粒或拋光器與工件表面的摩擦而造成表面塑性流動面的平滑，以及磨粒或加工液與工件表面之化學的作用而形成薄膜脫落。隨著加工液對工件表面之浸蝕作用的增強，使工件表面被微量移除。基本上’研光機械和拋光機械之構造很類似。苓考圖1，顯示習用之晶圓超精密研光裝置之示意圖（如櫻井良文等人，”陶瓷的超精密加工，，，日刊新聞社出版， 1983 ’ p.270)°該研光裝置10包括一研光塊11、一修整器 (dreSSer)12、一修整器導引13、加工負荷14、一鑄鐵盤15、一循環管路16。晶圓17係黏貼於不鏽鋼製的研光塊η下方，而研光塊π係置於修整器12内，將隨著鑄鐵盤15的轉1244962 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method and device for processing surface abrasive grains, particularly a method and device for combining composite electroplating and surface abrasive particle processing. [Previous technology] The conventional surface abrasive grain processing methods are divided into the categories of grinding, lapping and lapping, and polishing. The grinding system uses the so-called grinding wheel or grinding stone. The grinding system is used A few micrometers of abrasive grains and hard abrasive discs. Polishing system uses fine abrasive grains and soft abrasive discs (also known as polishers) below micron. The grinding mechanism is based on the solid cutting action Workpiece surface. Grinding guardian machine (manufacturing: using free gram ploughing (dry) and rolling (wet) cutting action to process the workpiece surface. Polishing processing mechanism, except for free In addition to the plowing action of abrasive grains, the friction of abrasive grains or polishers on the surface of the workpiece causes the smooth plastic flow surface of the surface, and the chemical action of abrasive grains or machining fluids on the surface of the workpiece causes the film to fall off. With processing The enhanced etching effect of the liquid on the surface of the workpiece causes the surface of the workpiece to be removed in small amounts. Basically, the structure of the grinding machine and polishing machine are similar. Figure 1 shows the ultra-precision research of conventional wafers. Schematic diagram of the device (such as Sakurai Ryoman et al., "Ultra-precision Machining of Ceramics,", published by Nikkan Shimbun, 1983 'p.270) ° The grinding device 10 includes a grinding block 11, and a dresser (dreSSer) 12 , A dresser guide 13, a processing load 14, a cast iron disk 15, and a circulation pipeline 16. The wafer 17 is adhered to the stainless steel polishing block η, and the polishing block π is placed in the dresser 12 Will follow the turn of the cast iron plate 15

O:\90\90659.DOC 1244962 動而能自轉。含一定粒徑的磨粒之懸濁加工液1 8由循環管路1 6供給至鑄鐵盤丨5的表面，且調整加工負荷丨4以進行晶圓丨7之研光加工。在另一應用中，如果將鑄鐵盤15更換成黃銅盤，在其上黏貼人工皮革的情況下，使用鹼性膠態二氧化矽，則可進行化學機械拋光（CMp)。參考圖2，顯示習用之晶圓拋光裝置之示意圖（如土肥俊郎等人’ ”半導體平坦化CMp技術”，工業調查會出版， 1999’ ρ·65)。該拋光裝置20包括一加壓頭21、一圓盤22、抛光墊修整器機構23、一加工液供給機構24。該加壓頭 2 1之下知设有一襯墊材料（packing material)26，該圓盤22 之上端設有一拋光墊（p〇lishing pad)27，該拋光墊修整機構23係用以修整該拋光墊27，該加工液供給機構24係用以供給加工液28至該拋光墊27上。晶圓25係黏貼在該襯墊材料26上作迴轉和搖動，藉由空壓對定速迴轉之拋光墊27 施加拋光負荷以進行晶圓25之拋光加工。為了使磨粒加工工具確保其加工能力以及維持安定的重現性之加工特性，習用之做法如下，在圖丨之研光裝置 10中加裝修整器12，在圖2之拋光裝置20中加裝拋光墊修整機構23。參考圖3 ’顯示電解修整（Electr〇lytic in_pr〇cess dressing ’簡稱Elid)磨削法之示意圖。該仙轉削裝置3〇包括一圓盤3 1、一圓盤33 ' 一電流供應器34、一冷卻液供給機構35及一加工液供給機構36。該圓盤33上置有一被加工件37。該圓盤31下端設有一磨石32，該磨石32係由鑄鐵O: \ 90 \ 90659.DOC 1244962 can rotate automatically. Suspended machining fluid 18 containing abrasive grains of a certain particle diameter is supplied to the surface of the cast iron plate 5 by the circulating pipe 16 and the processing load 4 is adjusted to perform polishing processing of the crystal circle 7. In another application, chemical mechanical polishing (CMp) can be performed if the cast iron disc 15 is replaced with a brass disc, with artificial leather affixed, and alkaline colloidal silica is used. Referring to FIG. 2, a schematic diagram of a conventional wafer polishing apparatus is shown (such as Tomi Toro et al. '"Semiconductor Flattening CMP Technology", Industrial Survey Publication, 1999' ρ · 65). The polishing device 20 includes a pressure head 21, a disc 22, a polishing pad conditioner mechanism 23, and a processing fluid supply mechanism 24. A packing material 26 is provided under the pressure head 21, and a polishing pad 27 is provided at the upper end of the disc 22. The polishing pad trimming mechanism 23 is used to trim the polishing. Pad 27, the processing fluid supply mechanism 24 is used to supply processing fluid 28 to the polishing pad 27. The wafer 25 is adhered to the pad material 26 for rotation and shaking, and a polishing load is applied to the polishing pad 27 rotating at a constant speed by air pressure to perform polishing processing of the wafer 25. In order for the abrasive processing tool to ensure its processing capability and maintain stable and reproducible processing characteristics, the customary practice is as follows. A finishing device 12 is added to the polishing device 10 in FIG. 丨, and a polishing device 20 is added to the polishing device 20 in FIG. 2. Attaching polishing pad dressing mechanism 23. Referring to FIG. 3 ′, a schematic diagram of an electrolytic dressing method is described. The centrifugal turning device 30 includes a disk 31, a disk 33 ', a current supplier 34, a cooling liquid supply mechanism 35, and a processing liquid supply mechanism 36. The disc 33 is provided with a workpiece 37 to be added. The lower end of the disc 31 is provided with a grinding stone 32, which is made of cast iron

O:\90\90659.DOC 1244962 纖維複合鑽石磨粒所製成。該圓盤3 1係接受外界驅動而轉動及於水平方向移動，而利用該磨石32對該被加工件37 進行表面磨削。該冷卻液供給機構35係用以供給冷卻液。该加工液供給機構3 6係用以供給加工液。該電流供應器3 * 之正極利用碳刷341電氣連接該磨石32，該電流供應器34 之負極電氣連接一金屬片342,該金屬片342係置放於該磨石32表面附近。在該磨石32及該金屬片342之間流通加工液以及施加直流電場情況下，可使該磨石32表面在磨削該被加工件37過程中因電解作用而使鐵原子溶解之同時形成非導體膜。這促使鑽石磨粒保持一定凸出量，因而得以磨削該被加工件37表面。此種方法是一種電解修整和磨削 2同時進行的方法。此外，尚有-制用超微細磨粒的電氣泳動現象來磨削矽晶圓的方法（Y· Tani等人，，，利用超微細磨粒的電氣泳動現象進行磨削矽晶圓”，日本機械學會論文集（c編），ν〇1·64，Ν〇·625，1998·9)，其加工^ 理類似Elid磨削法。+至尤m々士 > Α工y ’、要不冋之處在於電軋泳動磨削法的加工液為膠態二氧化矽（colloidal silica)。依上述Elid磨削法的原理而開發出各種加工裝置。例如，在螯合劑之電解液中，在磨盤的負極與工件的銅膜的正極之間施加電麼情況下得以加工銅膜表面的氧化銅凸出部分（中華民國專利公告第侧55、503475及507318 號），在半導體的卫件表面電鑛或錢光中通電接觸置之發明(中華民國專利公告第504796號)，在電：撤光法中彈《光磨《置之發明（中華民國專利:=O: \ 90 \ 90659.DOC 1244962 Fiber composite diamond abrasive grain. The disc 31 is rotated and moved in the horizontal direction by external driving, and the workpiece 37 is surface-grinded by the grinding stone 32. The cooling liquid supply mechanism 35 is used to supply a cooling liquid. The processing fluid supply mechanism 36 is used to supply a processing fluid. The positive pole of the current supply 3 * is electrically connected to the grinding stone 32 by a carbon brush 341, and the negative pole of the current supply 34 is electrically connected to a metal piece 342, which is placed near the surface of the grinding stone 32. When a processing fluid flows between the grinding stone 32 and the metal piece 342 and a DC electric field is applied, the surface of the grinding stone 32 can be formed while iron atoms are dissolved due to electrolytic action during grinding of the workpiece 37. Non-conductive film. This causes the diamond abrasive grains to maintain a certain amount of protrusion, thereby being able to grind the surface of the workpiece 37. This method is a method in which electrolytic dressing and grinding 2 are performed simultaneously. In addition, there is still a method for grinding silicon wafers using the electrophoretic phenomenon of ultrafine abrasive grains (Y · Tani et al., Grinding silicon wafers using the electrophoretic phenomenon of ultrafine abrasive grains ", Japan Proceedings of the Institute of Mechanical Engineering (c), ν〇1 · 64, No. 625, 1998 · 9), the processing mechanism is similar to the Elid grinding method. + To Youm々士> Α 工 y ', or The problem lies in the fact that the processing fluid of the electrophoretic grinding method is colloidal silica. Various processing devices have been developed according to the principle of the above-mentioned Elid grinding method. For example, in the electrolyte of a chelating agent, When electricity is applied between the negative electrode of the grinding disc and the positive electrode of the copper film of the workpiece, the copper oxide protrusions on the surface of the copper film can be processed (Republic of China Patent Bulletin No. 55, 503475, and 507318). The invention of electricity or contact in mines or money (ROC Patent Bulletin No. 504796), in the "Electric: Withdrawal" method, the invention of "Guang Mo" (Republic of China: =

O:\90\90659.DOC 1244962 51647!號），在電拋光或電鍍法中半導體工件之定位和夾持方法和裝置之發明（中華民國專利公告第43〇919號）。上述各種表面磨粒加工法中之加工工具，如圖丨之鑄鐵盤15’圖2之拋光墊27或是圖3之磨石32等，會於加工過程中么生才貝耗，因此其皆為消耗品，而且在使用一段時間後必須更換。此外，必須使用修整器修整該等加工工具以保持該等加工工具之銳利度。因此，有必要提供一創新且富進步性的表面磨粒加工之方法及裝置，以解決上述問題。【發明内容】〃本發明 < 王要目的係提供一種結合複合電鍍與表面磨粒加工之方法，以拋光器為負極，金屬材料為正極，在含定量的分散磨粒之電鍍液中，施加直流電場來進行複合電鍍該拋光器且同時進行磨粒加工被加工件表面，藉此可以不必更換拋光器及不必使用修整器。而且，本方法之加工速率係與以往機械化學拋光法和化學機械拋光法同等級’並且加工後的表面粗度達奈米級，平面度也達微米級。本發明之另-目的係提供—種結合複合電鑛與表面磨粒加工之裝置’用以對一被加工件進行表面磨粒加工，該裝置包括一撤光器、-電鍍槽、一金屬材料及—電源二應器。 ^ 該拋光器具有一複合電鍍層以對該被加工件進行表面磨粒加工。該電鍍槽内容置-含定量分散的磨粒：電鍍液，該電鍍液係用以於該拋光器對該被加工件進行表面力又O: \ 90 \ 90659.DOC 1244962 51647!), The invention of a method and device for positioning and holding semiconductor workpieces in an electropolishing or electroplating method (Republic of China Patent Publication No. 43〇919). The processing tools in the above various surface abrasive grain processing methods, such as the cast iron plate 15 'of Fig. 丨 the polishing pad 27 of Fig. 2 or the grinding stone 32 of Fig. 3, will be consumed during the processing process, so they are all Are consumables and must be replaced after a period of use. In addition, these tools must be trimmed with a dresser to maintain the sharpness of these tools. Therefore, it is necessary to provide an innovative and progressive surface abrasive particle processing method and device to solve the above problems. [Summary of the Invention] 〃The present invention < The purpose of the present invention is to provide a method of combining composite electroplating and surface abrasive grain processing, using a polisher as a negative electrode and a metal material as a positive electrode, in a plating solution containing a certain amount of dispersed abrasive particles, applying A DC electric field is used to perform composite plating of the polisher and at the same time to perform abrasive grain processing on the surface of the workpiece, thereby eliminating the need to replace the polisher and the use of a dresser. Moreover, the processing rate of this method is equivalent to that of the conventional mechanochemical polishing method and chemical mechanical polishing method ', and the surface roughness after processing is up to the nanometer level, and the flatness is also up to the micrometer level. Another object of the present invention is to provide a device 'combining composite electric ore and surface abrasive grain processing' for surface abrasive grain processing of a workpiece, the device includes a light remover, a plating tank, and a metal material. And-power two reactor. ^ The polisher has a composite electroplated layer for surface abrasive grain processing of the workpiece. The content of the electroplating tank-containing quantitatively dispersed abrasive particles: electroplating solution, the electroplating solution is used to perform surface force on the workpiece by the polisher

O:\90\90659 DOC -10- 1244962 一過中’持績複合電鍍該拋光器，使該拋光器形成該複合電鍍層。該金屬材料係用以提供該複合電鍍過程中所需之金屬離子。该電源供應器係用以提供該複合電鍍過程中所而之包流，以使該金屬材料所釋出知該金屬離子與該電鐘液中的磨粒共同沉積於該拋光器形成複合電鍍層。【實施方式】參考圖4，頒示本發明較佳實施例之裝置之示意圖。該結合複合電鍍與表面磨粒加工之裝置4〇係用以對一被加工件（例如一晶圓）45進行表面磨粒加工（如拋光、研光或磨削），其包括··一加工工具組件41、一電鍍槽42、一金屬材料43 黾源供應态組件44、一夾具組件46及一循環攪摔組件47。該加工工具組件41包括：一圓盤411及一圓盤轉軸412。該圓盤411具有一複合電鍍層（亦稱拋光器（p〇nsher))413 以對该被加工件45進行表面磨粒加工。該圓盤轉軸412係與該圓盤411相連接，該圓盤轉軸412係接受外界驅動而轉動，且帶動該圓盤411轉動，而能進行加工。該電鍍槽42内容置一含定量分散的磨粒之電鍍液421、該加工工具組件4 1及該被加工件45。該電鍍液421係用以於該加工工具組件41對該被加工件45進行表面加工過程中，持續複合電鍍該圓盤411上的該拋光器413形成該複合電鍍層41 3。該複合電鍍層41 3中之金屬和磨粒之材質係為一習知之複合電鍍技術。該金屬材料43係位於該電鍍槽42内，用以提供該複合電 O:\90\90659.DOC -11 - 1244962 鍍過程中所需之金屬離子。該電源供應器組件44包括一電源供應器441、一可變電阻态442及一碳刷443。該電源供應器441係用以提供該複合私鍍過私中之電流，其正極電氣連接至該金屬材料43，其負極利用該碳刷443電氣連接該圓盤轉軸412，以使該金屬材料43所釋出之該金屬離子與該電鍍液的磨粒共同沉和於泫圓|411上之該据光器413形成該複合電鍍層413。 ▲可、文笔阻為442係用以調整該電源供應器441所提供之電流。該夾具組件46包括：一夾具461、一球面軸承462、一工件轉軸463及一銷464。該夾具461係用以承載該被加工件 45。該球面軸承462係與該夹具461相連接，用以使該被加工件4 5表面與該磨盤411表面對合。該工件轉軸4 6 3係與該球面軸承462相連接，並且對該被加工件表面施加加工負荷，該工件轉軸463係接受外界驅動而轉動。該銷464係用以卡接該夾具461及該工件轉軸463，俾使該夾具46 1隨著該工件轉轴463同時轉動，而能進行加工。該循環攪拌組件47包括：一攪拌器471、一鍍液回收槽 472、一幫浦473及一矽膠管路474。該攪拌器471係用以攪掉該電鐘槽4 2中之該電鍍液4 2 1。該鐘液回收槽4 7 2係用以回收該電鍍液421。該幫浦473係用以輸送該電鍍液421至該電鍍槽42。該矽膠管路474係連接該電鍍槽42、該鍍液回收槽472及該幫浦473。茲以下列實例予以詳細說明本發明，惟並不意味本發明 O:\90\90659.DOC -12- 1244962 僅侷限於此等實例所揭示之内容。實例1至6 : 在所有實例中，該圓盤411係為純銅盤，其幾何形狀為外位i〇〇mm，厚度l〇mm。電鍍前，盤表面經由800〜2000 號的砂紙研磨後，再酸洗並且烘乾。另一方面，該被加工件45係為一矽晶圓，其試片的幾何形狀為外徑4〇mm，厚度0.525mm，其取自半導體用之晶方向<1〇〇>且電性N型之 4吋矽晶圓材料。丧耆，電鍍該圓O: \ 90 \ 90659 DOC -10- 1244962 One-time-over-performance composite plating of the polisher, so that the polisher forms the composite plating layer. The metal material is used to provide metal ions required in the composite plating process. The power supply is used to provide the enveloping flow during the composite electroplating process, so that the metal material releases that the metal ions and the abrasive particles in the electric clock liquid are deposited on the polisher to form a composite electroplating layer. . [Embodiment] Referring to FIG. 4, a schematic diagram of a device according to a preferred embodiment of the present invention is shown. The device 40 for combining composite electroplating and surface abrasive grain processing is used to perform surface abrasive grain processing (such as polishing, polishing, or grinding) on a workpiece (for example, a wafer) 45, and includes a processing The tool assembly 41, a plating tank 42, a metal material 43, the source supply state assembly 44, a clamp assembly 46, and a circulation stirrer assembly 47. The processing tool assembly 41 includes a disc 411 and a disc rotating shaft 412. The disc 411 has a composite plating layer (also referred to as a polisher) 413 to perform surface abrasive grain processing on the workpiece 45. The disc rotating shaft 412 is connected to the disc 411. The disc rotating shaft 412 is rotated by external driving, and drives the disc 411 to rotate, so that processing can be performed. The plating tank 42 contains a plating solution 421 containing a predetermined number of dispersed abrasive particles, the processing tool assembly 41, and the workpiece 45. The plating solution 421 is used in the surface processing of the workpiece 45 by the processing tool assembly 41, and the polishing tool 413 on the disc 411 is continuously composite-plated to form the composite plating layer 41 3. The material of the metal and abrasive grains in the composite plating layer 413 is a conventional composite plating technology. The metal material 43 is located in the plating tank 42 and is used to provide metal ions required for the composite electric O: \ 90 \ 90659.DOC -11-1244962. The power supply assembly 44 includes a power supply 441, a variable resistance state 442, and a carbon brush 443. The power supply 441 is used to provide the electric current in the composite plating. The positive electrode is electrically connected to the metal material 43. The negative electrode is electrically connected to the disc shaft 412 by the carbon brush 443, so that the metal material 43 The released metal ions and the abrasive grains of the electroplating solution sink together with the light receiver 413 on the circle | 411 to form the composite electroplated layer 413. ▲ Yes, the writing resistance is 442, which is used to adjust the current provided by the power supply 441. The fixture assembly 46 includes a fixture 461, a spherical bearing 462, a work piece shaft 463, and a pin 464. The fixture 461 is used to carry the workpiece 45. The spherical bearing 462 is connected to the jig 461, and is used to make the surface of the workpiece 45 and the surface of the grinding disc 411 abut. The workpiece rotation shaft 4 6 3 is connected to the spherical bearing 462, and a machining load is applied to the surface of the workpiece. The workpiece rotation shaft 463 is rotated by external driving. The pin 464 is used to engage the jig 461 and the workpiece rotating shaft 463, so that the jig 461 can be processed simultaneously with the rotation of the workpiece rotating shaft 463. The circulating stirring assembly 47 includes a stirrer 471, a plating solution recovery tank 472, a pump 473, and a silicone tube 474. The agitator 471 is used to agitate the plating solution 4 2 1 in the electric clock groove 42. The bell liquid recovery tank 4 7 2 is used to recover the plating solution 421. The pump 473 is used to convey the plating solution 421 to the plating tank 42. The silicone tube 474 is connected to the plating tank 42, the plating solution recovery tank 472, and the pump 473. The following examples are used to explain the present invention in detail, but it does not mean that the present invention O: \ 90 \ 90659.DOC -12-1244962 is limited to the content disclosed in these examples. Examples 1 to 6: In all examples, the disc 411 is a pure copper disc with a geometric shape of 100 mm in outer position and 10 mm in thickness. Before electroplating, the surface of the disc was ground with 800-2000 grit sandpaper, then pickled and dried. On the other hand, the workpiece 45 is a silicon wafer, and the geometry of the test piece is 40 mm in outer diameter and 0.525 mm in thickness, which is taken from the crystal direction of semiconductors < 100 > N-type 4 inch silicon wafer material. Mourning, plating the circle

在以下實施例中，該電鍍方式有兩種，一為純錫（Sn)鍍另一為錫基氧化鋁磨粒（Sn_A12〇3)複合鍍。該純錫鍍所> 用之電鍍液之組成如下：錫酸鉀（KjnO3)·· 22〇g/卜氫」化鉀（KOH) : 22 g/1、醋酸鉀（CH3C〇〇k) : 1〇 g/1、過氧」In the following embodiments, there are two types of plating methods, one is pure tin (Sn) plating and the other is tin-based alumina abrasive grains (Sn_A1203) composite plating. The composition of the electroplating bath used in this pure tin plating station is as follows: potassium stannate (KjnO3) ·· 22〇g / hydrogen potassium (KOH): 22 g / 1, potassium acetate (CH3C〇k): 1〇g / 1, peroxy "

虱饵2〇2)· 1.5 ml/l。錫基氧化鋁磨粒複合鍍所使用之電^ 液只多加了 ίο wt%之氧化鋁（A12〇3，平均粒徑〇·3 “η 作為分散磨粒，其餘成分則與該純_所❹之電鍛液才同此一種迅鐘中之该金屬材料43皆為純錫材料。然後利用該圓盤411對該被加工件45進行表面加工，卫於該表面加工過程甲，持續電鍍該圓盤411，使其表面希成一電鍍層，以作為拋光器（p〇Hsher)。參考表工，其顯示實例⑴之實驗條件，其中實⑷之銅 :上之電鍍層為純錫金屬，且於拋光過程中沒有添加磨粒沒有同時進行電鑛。實例2與實例1不同處僅為其銅盤上之電鑛層為錫基氧化㈣粒複合鑛層。實例3之銅盤上之Lice bait 202) · 1.5 ml / l. The electrolyte used in the tin-based alumina abrasive particle composite plating only added ίο wt% of alumina (A12〇3, average particle size 0.3 · "as the dispersed abrasive particles, and the rest of the components were the same as those of the pure _ The electric forging fluid is the same as the metal material 43 in this kind of clock. The metal material 43 is pure tin material. Then the surface of the workpiece 45 is processed by the disc 411, and the circle is continuously electroplated on the surface. Plate 411, so that the surface thereof is formed with a plating layer as a polisher (p0Hsher). Referring to the watchmaker, it shows the experimental conditions of Example 其中, where the actual copper plating: the plating layer is pure tin metal, and No abrasive grains were added during the polishing process and no electric ore was performed at the same time. Example 2 differs from Example 1 only in that the electric ore layer on its copper plate is a tin-based hafnium oxide composite ore layer.

O:\90\90659.DOC -13- 1244962 電鍍層為純錫金屬，且有同時進行電鍍。實辑實=_有添加磨粒，但是沒鍍層為錫基虱化鋁磨 <•电各层粒後合鍍層。實例5與之電鍍層皆為錫A g各如、—人貝例6之銅盤上场基虱化鋁禝合鍍層，且加磨粒同時進行電鍍，、尤過転中有添電流之大小。 5处僅為拋光過程中電鍍實例電錢層 (拋光器）表1 ··實例1至6之實驗條件電鍍液中之分散磨粒拋光時之電流密度 (A/dm2)O: \ 90 \ 90659.DOC -13- 1244962 The plating layer is pure tin metal, and it is also plated at the same time. Real series = _ with added abrasive particles, but no plating layer is tin-based aluminum alumina mill < • Electrical coating after each layer of particles. The electroplating layers of Example 5 and tin are all tin A g, which is the same as that on the copper plate of Example 6. The aluminum alloy composite plating on the copper plate of the example 6 is performed, and the abrasive grains are simultaneously plated, especially if the current is added to the plate. 5 places are only for electroplating during polishing. Example Electric layer (polishing device) Table 1 ·· Experimental conditions of Examples 1 to 6 Dispersed abrasive particles in plating solution Current density during polishing (A / dm2)

參考圖5及圖6，圖5顧+香&， / 〜”實例1至6之銅盤表面的電鍵層 (亦稱拋光器)的厚度與拋光時間之關係圖，圖6顯示實例1 至1之石夕晶圓移除量與拋光時間之關係圖。其中符號△代表實例1 ’〇代表實例2，▲代表實例3, ·代表實例4, _ 代表實例5，♦代表實例6。在圖5中，當拋光器為Sn錢層和Sn-Al2〇3複合鐘層且在 ^電鍍液（實例⑴）或者添加八叫磨粒的電鑛液（實例3 及4)中進彳丁以圓拋光時，錢層厚度㈣光時間的增加而水f減^ 表不该拋光器在不通電流的拋光過程中逐漸磨損，使抛光器有-定的壽命，最終必須被換新。另一方面’在複合電錢同時抛光的實驗，亦即拋光器With reference to FIGS. 5 and 6, FIG. 5 Gu + 香 &, / ~ "The relationship between the thickness of the key bond layer (also known as the polisher) and the polishing time on the copper plate surface of Examples 1 to 6, and Figure 6 shows Examples 1 to 1 The graph of the relationship between the removal amount of Shishi wafer and the polishing time. The symbol △ represents Example 1 '〇 represents Example 2, ▲ represents Example 3, · represents Example 4, _ represents Example 5, and ♦ represents Example 6. In Figure 5 In the case where the polisher is a Sn layer and a Sn-Al203 composite clock layer and is polished in ^ electroplating solution (example 电) or electric ore solution (examples 3 and 4) added with eight abrasive grains for round polishing At the same time, the increase of the thickness time of the money layer and the decrease of the water f indicate that the polisher will gradually wear out during the currentless polishing process, so that the polisher has a fixed life and must be replaced with a new one. Experiment of simultaneous polishing of composite electric money, that is, polisher

O:\90\90659.DOC 1244962 複合鍍層且在添加A12〇3的鍍液中施加不同電流密度 1.68A/dm (實例5)和〇.2 8A/dm2(實例6)進行複合電鑛同時拋光石夕晶圓情況。鑛層厚度與電鑛同時抛光時間的關係在電流密度1.68A/dm2時呈現顯著的線性增加，而在〇，.28A/dm2時呈現不顯著的線性增加。這表示如前述之抛光過知中即使搬光器發生磨損，但在同時複合電鑛情況下同時被修補。尤其是在電流密度〇28A/dm2條件下，抛光器的耗損量與修補量彼此幾乎達到平衡程度。這意味㈣光器的壽命幾乎達到無限長。另一方面，在圖⑭，與圖$ 的實驗條件相同下，石夕S #止，[ΛΑ T 1 乂夕曰曰0材枓的平均移除量與拋光時間之關係皆呈現線性增加。尤其是以複合電鐘同時抛光情況下（實例5及6)之硬晶圓的平均移除量較大。這是由於抛光器不斷產生新且銳利的拋光層之故。參考圖7，顯示不同膏你丨夕γ欠士 4丨J灵例之條件下，拋光器的電鍍層厚度變化率與石夕晶圓移除率，其中上方長條圖顯示抛光器的電鑛層厚度變化率，下方長條圖顯示石夕晶圓移除率。由於圖5和圖6所不之鐘層厚度及砂晶圓移除量與拋光時間皆呈現線性關係。此線性關係之斜率即為鍍層厚度變化率或夕曰曰圓移除率。為了誶細探討各種實驗條件與鑛層厚度變化率或石夕晶圓移除率的關係，而將圖5和圖6的結果整理成 2為圖7。由圖7可知’在不通電及如鍍液條件下(實例丨及 η鍍層（實例υ的拋光器之鍍層厚度減 =叫複合錄層（實例2)情況，但其對以圓的移除率反乂小。又這兩種抛光器分別在添加从〇3磨粒的錫鑛液O: \ 90 \ 90659.DOC 1244962 composite coating and applying different current densities of 1.68A / dm (Example 5) and 0.2 8A / dm2 (Example 6) in the A12〇3 bath for simultaneous polishing of composite power ore Shi Xi wafer situation. The relationship between the thickness of the ore layer and the simultaneous polishing time of the power ore showed a significant linear increase at a current density of 1.68A / dm2, and a non-significant linear increase at .0, .28A / dm2. This means that, as mentioned in the previous polishing knowledge, even if the light carrier is worn, it will be repaired at the same time in the case of simultaneous composite power mining. Especially under the condition of current density of 28A / dm2, the amount of wear and repair of the polisher almost reached a balance with each other. This means that the life of the phosphor is almost infinite. On the other hand, under the same experimental conditions as in Figure $, under the same experimental conditions as in Figure $, the relationship between the average removal amount and polishing time of [ΛΑ T 1 乂 xi 曰 0 wood 枓] showed a linear increase. In particular, the average removal of hard wafers in the case of simultaneous polishing of composite electric clocks (Examples 5 and 6) is large. This is due to the continuous generation of new and sharp polishing layers by the polisher. Referring to FIG. 7, under the conditions of different pastes you 丨 γ yushi 4 丨 J Ling example, the rate of change in the thickness of the plating layer of the polisher and the rate of removal of the Shi Xi wafer, where the bar graph above shows the power ore Layer thickness change rate. The bar graph below shows the Shi Xi wafer removal rate. As shown in Figures 5 and 6, the thickness of the bell layer, the amount of sand wafer removal, and the polishing time all show a linear relationship. The slope of this linear relationship is the rate of change in the thickness of the coating or the rate of circle removal. In order to discuss in detail the relationship between various experimental conditions and the change of the thickness of the ore layer or the removal rate of the Shixi wafer, the results of Fig. 5 and Fig. 6 are arranged into 2 as Fig. 7. It can be seen from FIG. 7 that under the condition of no current and plating solution (examples 丨 and η plating (the thickness of the coating of the polisher of example υ minus = called the composite recording layer (example 2)), but its removal rate on the circle It is small. And these two polishers are adding tin ore liquid from 〇03 abrasive grains.

O:\90\90659.DOC 15 - 1244962 中（實例3及4)之鍍層厚度減少率比前者況較小，但其對矽晶圓的移除率反而較大。另一方面在通電及添加Al2〇3磨粒的錫鍵液中進行所謂複合電鍍同時拋光情況下（實例5 及6)，拋光器的鍍層呈現增加並且矽晶圓的移除率急速增大，尤其疋當電流密度較大時之鍍層增加率及矽晶圓移除率皆更大。以定$而言，值得注意之處為在相同Sn_A12〇3 拋光器及添加Al2〇3磨粒鍍液中，通電進行複合電鍍同時拋光情況下（實例5及6)之矽晶圓移除率〇13〜〇18/m/min 為不通電的拋光（實例4)情況0 052Mm/min之2 5〜3 5倍。尤其是以電流密度0.28A/dm2為複合電鍍同時拋光（實例幻之最佳通電條件。亦即拋光器的鍍層增加率僅〇〇1^m/mi_^ 微小，並且矽晶圓移除率為〇13/nn/min，接近傳統的機械化學拋光（MCP)或者化學機械拋光（CMp)情況。針對實例5及6在拋光前及拋光後所作之表面粗糙度測量可發現，在拋光前矽晶圓表面呈現灰暗，平均粗糙度& 約為545nm。但在拋光後矽晶圓表面呈現明亮的鏡面，平& 均粗糙度Ra約為2nm。上逑實施例僅為說明本發明之原理及其功效，並非限制本發明。因此習於此技術之人士對上述實施例進行修改及變化仍不脫本發明之精神。本發明之權利範圍應如後述之申請專利範圍所列。【圖式簡單說明】圖1顯示習用之晶圓超精密研光裝置之示意圖；圖2顯示習用之晶圓拋光裝置之示意圖；O: \ 90 \ 90659.DOC 15-1244962 (Examples 3 and 4) has a smaller reduction rate of coating thickness than the former, but its removal rate for silicon wafers is rather large. On the other hand, in the case of so-called composite electroplating and simultaneous polishing in a tin bond solution that is energized and added with Al203 abrasive grains (Examples 5 and 6), the polishing layer of the polisher increases and the removal rate of the silicon wafer increases rapidly. In particular, when the current density is large, the plating increase rate and silicon wafer removal rate are both greater. In terms of fixed dollars, it is worth noting that the silicon wafer removal rate in the same Sn_A1203 polisher and the addition of Al2O3 abrasive plating solution for simultaneous electroplating and polishing (Examples 5 and 6) 〇13 ~ 〇18 / m / min is 2 to 3 to 5 times of 0 052Mm / min in the case of polishing without electricity (Example 4). In particular, the current density of 0.28A / dm2 is used for simultaneous polishing of the composite plating (the best conditions for energizing the example. That is, the plating layer increase rate of the polisher is only 0.001 ^ m / mi_ ^ is small, and the silicon wafer removal rate is small. 〇13 / nn / min, which is close to the traditional mechanical chemical polishing (MCP) or chemical mechanical polishing (CMp). For the surface roughness measurements of Examples 5 and 6 before and after polishing, it can be found that the silicon crystals before polishing The round surface appears dark, and the average roughness & is about 545nm. However, the polished silicon wafer surface shows a bright mirror surface, and the flat & average roughness Ra is about 2nm. The above example is only to illustrate the principle and Its effect does not limit the present invention. Therefore, those skilled in the art can still modify and change the above embodiments without departing from the spirit of the present invention. The scope of the rights of the present invention should be listed in the scope of patent application described later. Description] Figure 1 shows a schematic diagram of a conventional wafer ultra-precision polishing device; Figure 2 shows a schematic diagram of a conventional wafer polishing device;

O:\90\90659.DOC -16- 1244962 圃J顯不電解修整磨削圖4顯示本發明較佳實施例之裝置之示意圖；圖5顯TF實例i至6之撤光器的⑽層厚度與抛光時^ 關係圖纟中符號△代表實例工，〇代表實例2，▲代表實例3、圖3二：“列1至6之矽晶圓移除量與拋光時間之關係 2 ”巾付號△代表實例卜◦代表實例2, ▲代表實例3, 代表貫例4 ’代表實例5’ ♦代表實例6;及O: \ 90 \ 90659.DOC -16- 1244962 Garden J shows electrolytic dressing and grinding Figure 4 shows a schematic diagram of the device of the preferred embodiment of the present invention; Figure 5 shows the thickness of the light layer of the dimmer of Examples TF 6 to 6 Relation diagram with polishing ^ The symbol △ in the figure represents example work, 〇 represents example 2, and ▲ represents example 3, Figure 3.2: "Relationship between the removal amount of silicon wafers in columns 1 to 6 and polishing time 2" towel number △ stands for example, ◦ stands for example 2, ▲ stands for example 3, stands for example 4 'for example 5', and ♦ stands for example 6; and

圖7顯不不同實例$ ^之生 ^ ，拋光器的電鍍層厚度變化率與矽晶圓移除率，其中上文化厚度⑸，T “、”、讀光器的電鑛層卜万長條圖顯示矽晶圓移除率。【圖式元件符號說明】 10 習用研光裝置 11 研光塊 12 修整器 13 修整器導引 14 加工負荷 15 禱鐵盤 16 循環管路 17 晶圓 18 加工液 20 習用拋光裝置 21 力α壓頭 22 圓盤Figure 7 shows the different examples of $ ^ 之生 ^, the change rate of the thickness of the plating layer of the polisher and the removal rate of the silicon wafer, in which the thickness of the upper culture is ⑸, T ",", and the electric power layer of the optical reader. The graph shows the silicon wafer removal rate. [Illustration of Symbols of Schematic Elements] 10 Conventional polishing device 11 Polishing block 12 Dresser 13 Dresser guide 14 Processing load 15 Prayer plate 16 Circulating pipeline 17 Wafer 18 Processing fluid 20 Conventional polishing device 21 Force α indenter 22 Disc

O:\90\90659.DOC -17- 1244962 23 拋光墊修整機構 24 加工液供給機構 25 晶圓 2 6 概塾材料 27 拋光墊 2 8 加工液 30 習用Elid磨削裝置 31 圓盤 32 磨石 33 圓盤 34 電流供應器 341 碳刷 342 金屬片 35 冷卻液供給機構 36 .加工液供給機構 37 被加工件 40 本發明之結合複合電鍍與表面磨粒加工之裝置 41 加工工具組件 411 圓盤 412 圓盤轉軸 413 電鍍層或稱拋光器 42 電鍍槽 421 電鍍液 43 金屬材料 O:\90\90659 DOC -18 - 1244962 44 電源供應器組件 441 電源供應器 442 可變電阻器 443 碳刷 45 被加工件 46 夾具組件 461 夾具 462 球面轴承 463 工件轉軸 464 銷 47 循環攪拌組件 471 攪拌器 472 鍍液回收槽 473 幫浦 474 .矽膠管路O: \ 90 \ 90659.DOC -17- 1244962 23 Polishing pad dressing mechanism 24 Working fluid supply mechanism 25 Wafer 2 6 General material 27 Polishing pad 2 8 Working fluid 30 Conventional Elid grinding device 31 Disc 32 Grinding stone 33 Disk 34 Current supply device 341 Carbon brush 342 Metal piece 35 Coolant supply mechanism 36 .Working fluid supply mechanism 37 Work piece 40 The device of the present invention which combines composite electroplating and surface abrasive grain processing 41 Processing tool assembly 411 Disk 412 Circle Disk rotating shaft 413 Plating layer or polishing device 42 Plating bath 421 Plating solution 43 Metal material O: \ 90 \ 90659 DOC -18-1244962 44 Power supply unit 441 Power supply unit 442 Variable resistor 443 Carbon brush 45 Machined part 46 Fixture assembly 461 Fixture 462 Spherical bearing 463 Workpiece shaft 464 Pin 47 Circulating stirring assembly 471 Agitator 472 Plating solution recovery tank 473 Pump 474. Silicone tubing

O:\90\90659.DOCO: \ 90 \ 90659.DOC

Claims

1244篆fe?101744號專利申請案辦『間日修(更)正本中文申凊專利範圍替換本(94年§月）拾、申請專利範圍： 1. 一種結合複合電鍍與表面磨粒加工之方法，包括： (a) 提供一加工工具，其具有一拋光器； (b) 提供一被加工件，· ⑷利用該加工工具上之該拋絲對該被加工件進、表面磨粒加工；及行 ⑷於步驟⑷之表面加工過程中，持續複合電鐘金屬於該拋光器，使該抱光器形成一複合電鐘金屬層。、 2.如申請專利’&圍第α之方法，其中步驟⑻之後更包括: (bl)提供-電鏡槽，該電鍍槽内容置一含定量的磨粒之電鍍液； 1 (b2)將j加工工具上之該拋光器及該被加工件置於該電鍍槽之電鍍液中；及 (b3)複$迅鍍至屬及磨粒於該拋光器，使該拋光器形成一複合電鐘層。 3 ·如申請專利範圍第1項之女、、土甘士、万法，其中孩表面磨粒加工係為拋光。 4_如申請專利範圍第1項之女味，甘士 4主：、万法，其中該表面磨粒加工係為研光。 5 ·如申請專利範圍第1項乏女、土甘士冷主I、万法，其中該表面磨粒加工係為磨削。 6· —種結合複合電鍍與表面麻、农靨紅加工炙裝置，係用以對一被加工件進行表面磨粒加工，該裝置包括： O:\90\90659-940819.DOC 加工工/、，’且件，其具有一拋光器，該抛光器具有一 -1 - 〆、 1244962 複合電鍍金屬層以對該被加工件進行表面磨粒加工； -電鍍槽’其内容置-含定量磨粒之電鍍液、該加工工具及該被加工件’該電鐘液係用以於該拋光器對該被加工件進行表面加工過程中，持續複合電鍍該拋光器，使該拋光器形成一複合電鍍金屬層；一金屬材料，位於該電鍍槽内，用以提供該電鐘過程中所需之金屬離子；及一電源供應器組件，係電氣連接該加工工具組件及該金屬材料’該電源供應n組件係用以提供該電鐘過程中所需之電流’以使該金屬材料所釋出之該金屬離子與該電鍍液中的磨粒共同沉積於該加工工具組件中之拋光器形成複合電鍍金屬層。 7.如申請專利範圍第6項之裝置，更包括一爽具組件，係用以承載該被加工件，該夾具組件係與該加工工具組件相對應，以使該被加工件進行表面磨粒加工。 8·如申請專利範圍第7項之裝置，其中該夾具组件包括：一夾具’係用以承載該被加工件； -球面轴承，係與該夾具相連接，用以使該被加工件表面與該加工工具組件表面對合；一工件轉軸，係與該球面軸承相連接，並且對該被加工件表面施加加工負荷’該工件轉軸係接受外界驅動而轉動；及 -銷，係用以卡接該夾具及該工件轉軸，俾使該夾具隨著該工件轉軸同時轉動，而能進工。 f0\90659-940819.DOC ~ 2 - 1244962 其中孩加工工具組件包如申凊專利範圍第6項之裝置括：、—圓盤，其具有—抛絲，該拋光器為1合電鎮層以對該被加工件進行表面磨粒加工；及 61 —圓盤轉軸，係與該圓盤相連接，該圓盤轉軸係接受外界驅動而轉動，且帶動該圓盤轉動，而能進行加工^ 10·如申請專利範圍第6項之裝置，更包括一攪拌器，用以授拌該電鍍槽中之該電鍍液。 11·如申請專利範圍第6項之裝置，更包括一幫浦，用以輸送該電鍍液至該電鍍槽。 12·如申請專利範圍第6項之裝置，其中該電源供應器組件包括：一電源供應器，係用以提供該電鍍過程中之電流；一可變電阻器，係用以調整該電流；及一碳刷，係電氣連接該加工工具組件，以導通該電流。 O:\90\9O659-94O819.DOC 3-1244 篆 fe? 101744 Patent Application Office "Jian Rixiu (revised) original Chinese patent application scope replacement version (1994 month) Pick up and apply for patent scope: 1. A method of combining composite electroplating and surface abrasive grain processing Including: (a) providing a processing tool having a polisher; (b) providing a processed part, ⑷ using the throwing wire on the processing tool to process the surface of the processed part and perform abrasive grain processing; and During the surface processing performed in step (2), the electric clock metal is continuously compounded on the polisher, so that the light holder forms a composite electric clock metal layer. 2. The method according to the patent application &#alpha;, wherein after step ⑻, the method further comprises: (bl) providing-an electron microscope tank, the plating tank content is provided with a plating solution containing a certain amount of abrasive grains; 1 (b2) the j the polishing tool and the workpiece on the processing tool are placed in the plating solution of the electroplating bath; and (b3) the compound plating and abrasive grains are fastened on the polishing tool, so that the polishing tool forms a composite electric clock Floor. 3. For the females, tuganshi, and Wanfa in the scope of the patent application, the surface abrasive particles are polished. 4_ If the feminine taste in the first item of the patent application scope, Gan Shi 4 main :, Wanfa, where the surface abrasive grain processing is ground. 5 · If the patent application scope of the first item is female, Tu Gan Shi Leng Zhu I, Wan Fa, where the surface abrasive grain processing is grinding. 6 · —A device that combines composite electroplating with surface hemp and agricultural red processing, which is used to perform surface abrasive grain processing on a workpiece, the device includes: O: \ 90 \ 90659-940819.DOC processing workers /, "And piece, it has a polisher, the polisher has a -1-12, 1244962 composite electroplated metal layer to perform surface abrasive grain processing on the workpiece;-electroplating tank 'its content-containing a fixed amount of abrasive grains The electroplating solution, the processing tool, and the workpiece “The electric clock liquid is used to continuously composite plating the polisher during the surface processing of the workpiece by the polisher, so that the polisher forms a composite electroplated metal Layer; a metal material located in the electroplating tank to provide metal ions required in the process of the electric clock; and a power supply component that electrically connects the processing tool component and the metal material 'the power supply n component It is used to provide the current required in the process of the electric clock, so that the metal ions released by the metal material and the abrasive particles in the plating solution are deposited together in a polisher in the processing tool assembly. Plated metal bonded layer. 7. The device according to item 6 of the scope of patent application, further includes a cooler component for carrying the workpiece, and the fixture component corresponds to the processing tool component, so that the workpiece is surface-granulated. machining. 8. The device according to item 7 of the patent application scope, wherein the fixture assembly includes: a fixture 'for carrying the workpiece;-a spherical bearing connected to the fixture for connecting the surface of the workpiece with The surface of the processing tool component is in butt joint; a workpiece rotating shaft is connected with the spherical bearing, and a processing load is applied to the surface of the workpiece; the workpiece rotating shaft is rotated by external driving; and-a pin is used for clamping The jig and the workpiece rotation shaft can make the jig move along with the workpiece rotation shaft at the same time, so that the work can proceed. f0 \ 90659-940819.DOC ~ 2-1244962 Among them, the processing tool component package such as the sixth item in the scope of the patent application includes:,-disc, which has-throw, the polisher is a 1-in electric ballast layer to Surface abrasive grain processing is performed on the workpiece; and 61-a disk rotation shaft is connected to the disk, and the disk rotation shaft is driven by external driving and rotates, and the disk is rotated to perform processing · If the device of the scope of application for patent No. 6 further includes a stirrer for stirring the plating solution in the plating tank. 11. The device according to item 6 of the scope of patent application, further comprising a pump for sending the plating solution to the plating bath. 12. The device according to item 6 of the patent application, wherein the power supply assembly includes: a power supply for supplying a current during the electroplating process; a variable resistor for adjusting the current; and A carbon brush is electrically connected to the processing tool assembly to conduct the current. O: \ 90 \ 9O659-94O819.DOC 3-