1241221 九、發明說明： 發明所屬之技術領域 本發明係關於一種乾式uv光基板洗淨方法及設備，尤 其有關一種乾式UV光/臭氧基板洗淨方法及設備。 先前技術 「超精微化製程」是高階電子產業發展的共同趨勢， 包括深次微米半導體、TFT_LCD、n^Vs通訊元件、超精 密加工、奈米材料製造、奈米電子元件等技術，皆是朝向 超精細與超潔淨的方向研發。在超精微製程的發展過程 中，當製程領域壓縮至分子級範圍，製程環境中任一環節 的超微量污染物（包括有機物、金屬與顆粒物質）存在以 及其濃度值的變異都將關鍵性地影響到製程良率，尤其是 有機污染物導致之元件缺陷更是高達90(3/。以上，雖然影響 製私良率之關鍵性因素眾多，然而最重要的卻與基板潔淨 私度（the Cleanliness of the substrate)有關；因此隨著元件 線寬急遽壓縮，對製程環境的潔淨度需求也急趨嚴格，因 此開發新式省水、超潔淨清洗技術為未來超精微產業因應 製程高潔淨度趨勢下提升製程良率必備的技術基盤，尤其 是1C或是TFT-LCD相關產業製程中皆須面臨多階段的清 洗私序卩过著晶圓或是基板尺寸不斷擴大，單位面積需水 I與溶蜊使用量皆呈倍數成長，雖然傳統清洗製程搭配多 P白I又的β洗私序可將基板充分洗淨，然而濕式清洗製程使 用之酸、驗、清潔劑、有機溶劑等已無法符合製程高潔淨 1241221 度需求，不但後續廢水處理與排放問題無可避免且仍須搭 配基板烘乾程序，亦可能 、口 問題增加後續製程階段：Γ 染殘留等 表才丨白奴之負何。除此之外，部分水洗盥半 水洗法需添加具有危害性的有機溶劑以利去除油脂類污毕 物，由於近幾年國際環保意識逐年高漲，諸如此類傳統濕 式清洗製程面臨禁用或轉型之要求，許多需使用溶劑之相 關產業亦因此面臨來自各界之壓力與危機，另一方面，製 許多替代性清洗技術亦因此因應而生，其中以乾式清洗技 術較能符合高潔淨度與達到高效率之清潔效果，相較於電 名（plasma)與雷射（iaser)清洗技術需在低溫且高度真空環 士兄下刼作，設備維護不易且產能偏低，紫外線臭氧（uv/〇3) 清洗法因具有不需抽真空、設備簡化容易維護、節省製程 清洗時間與具有大尺寸線上自動化潛力等特性使其成為較 程與產。口潔淨度之要求提高亦增加洗淨技術發展之難度， 具代表性的基板乾式清洗技術。 由於UV光具有將化學鍵打斷的能量，因此可利用其 特性將之應用於有機污染物質氧化分解，目前工業界常用 產生紫外光之方式有低壓水銀燈、中壓水銀燈等，燈管形 式經修正改良後，光源輸出照度穩定、效率高且長時間操 作亦不會產生高溫。目前國内使用中之UV或是UV/臭氧 乾式清洗機台内設計為氣體由機台單侧注入、單侧抽氣（圖 4) ’無法達成全面性及大尺寸之均勻洗淨。在圖4中，注 入氣體為過濾後之空氣，進入機台後才反應產生臭氧，之 後再分解成氧原子，具氧化力之臭氧及氧原子數量過低， 1241221 氧化效果不佳且清洗時間必須延長。此外，單侧注入、單 側抽氣的氣體流動方式亦使得污染物易滯留於機台内。圖 4中被/月洗的基板10不能被均勻洗淨，其中圓點表示清洗 後最乾淨處，十字星點表示清洗後最不乾淨處，及三角形 點表示乾淨度介於其間。 氣體刀政盤（gas distribution plate)或是氣體輸送系統 (gas deiivery system)s IC半導體製造的應用相當廣泛，其 應用主要包括在化學氣相沈積（chemical vap〇r dep〇shi〇n， CVD)階段’例如薄膜沈積或是CVD艙的清洗。經搜尋專 利文獻後顯示，截至目前為止尚無針對氣體分散盤或模組 應用於基板清洗之相關專利文獻被發表。 發明内容 本發明的一主要目的在提出一種不具有先前技術之缺 點的乾式UV光基板洗淨方法及設備。 本發明所揭示的一種乾式uv光基板洗淨方法，包含 下列步驟： a) 將一基板置於一密閉空間； b) 將一清洗氣體以垂直於該基板的一待清洗表面的 方向導入該密閉空間； c) 將一 uv光垂直照射於該基板的待清洗表面上； 及 ， d) 由該基板下方（未照光的一方）及圍繞待清洗表面 的渠道從該密閉空間抽氣，於是將該清洗氣體及承载於其 1241221 封閉空間。 包含乾淨空氣、純氧、含 的，步驟b)的清洗氣體包 中的被清洗出來的污染物移出該 較佳的，步驟b)的清洗氣體 臭氧的氣體或它們的混合。更佳 含乳與臭氧的混合氣體。 較佳的，步驟e)的UV 子紫外光燈。 光的來源包含低壓汞燈或準分 適合以本發明方法進行 < π死淨的基板包含玻璃基板、矽 晶圓、石英晶圓或彩色清本μ 巴愿先片，以玻璃基板為較佳。該玻 璃基板經過步驟b)至d) 151 Β主、& V- )主冋時進行一段時間後，該玻璃基板 的被清洗的表面具有小於1G度的水接觸角。 本發明亦揭示一種乾式UV光基板洗淨設備，包含： 一清洗槽； 一設置於該清洗槽内的待清洗基板放置平台，其中該 放置平台與該清洗槽的槽豸之間丨成圍繞該纟置平台的抽 氣渠道； 一上蓋結構，其與該清洗槽氣密的結合且可被開啟， 其包含一氣體分散模組及多個uv燈管，其中該氣體分散 模組具有位於同一平面的多個氣體分散孔洞； 當該上蓋結構氣密的結合於該清洗槽上時，該多個UV 燈官位於該放置平台上方，且該多個UV燈管與該放置平 台互相平行；及該具有多個該氣體分散孔洞的平面隔著該 多個UV燈管與該放置平台平行。 較佳的，該氣體分散模組包含多層互相平行的氣體分 散板’其中每層氣體分散板具有等間隔的氣體分散孔洞， 1241221 且每層氣體分散板的氣體分散孔洞的大小由離該放置平台 最遠者至離該放置平台最近者逐漸縮小。更佳的，每層氣 體分散板的氣體分散孔洞的總面積的大小由離該放置平台 最遠者至離該放置平台最近者逐漸縮小。 於本發明的一較佳具體實施例中，該氣體分散模組包 3 4層互相平行的氣體分散板中離該放置平台最遠的 氣體分散板具有四個錢6 _的氣體分散孔洞，及離該 放置平台最近的氣體分散板具有676個直徑G3 mm的氣體 分散孔洞。 較佳的，該多個UV燈管為栅攔式低壓汞燈或準分子 紫外光燈管（excimer lamp) 〇 較佳的，該放置平台連接於一微伺服馬達，於是可藉 由該微伺服馬達的驅動精確調整該放置平台至該多個 燈官之垂直距離，該放置平台可移動之垂直距離為〜 5 · 8 cm 〇 較佳的，該放置平台附設一加熱裝置。 本發明之透過該氣體分散模組之設計與安裝，配合謗 清洗槽的放置平台周圍的等距渠道，以一定之流量將清洗 氣體導人氣體分散模組的同時亦進行該清洗槽抽氣與排氣 的動作，使導入之清洗氣體可有效的且均勻分散於待清洗 板之表面使待清洗基板表面附著之污染物與導入的清 洗氣體充分作用，經作用分解後之產物隨即可被完全排出 /月洗槽之外，無污染物累積遲滯之疑慮。除此之外，本案 利用有限兀素數值分析法模擬該清洗槽内氣流分佈均勻 1241221 來驗证該清洗槽内之流場分佈狀況，結果顯示本案清 ^ 墾力刀佈、污染物濃度被帶出程度、氣流分佈等之 均2度皆甚佳，較目前實廠所使用的單邊進氣、抽氣方式 =清洗機台的清洗槽内部之污染物濃度被帶出程度、氣流 布句勻度不佳等情況明顯具有大幅改善的效果。 實施方式 、依本發明的一較佳具體實施例所完成的一種uv/臭氧 乾式清洗機台被示於圖1，機台整體機構皆為不銹鋼材質。 ~ 六氧乾式清洗機台包含一上蓋結構1，其内設有一氣 體刀政模組3，及栅攔式uv燈管2，可有效縮短燈管間距； 及π洗槽A，其内設有一待清洗基板放置平台4，該放置 平口 4的下方連接有一微伺服馬達（未示於圖中），於是可精 確凋整該待清洗基板放置平台4至該uV燈管2之距離，其中 該放置平台4下方四邊開設等距之長條形抽氣渠道5。圖2 =此乳體分散模組3之細部設計圖。氣體分散模組]為多層 叹计’由上至下共計四層不銹鋼板6,丨8, 9，每層不鱗鋼 板上於固定距離鑽有氣體分散孔洞2〇,其分佈情況為由上 曰至下層孔洞直徑呈現縮小之趨勢，愈下層孔洞分佈愈密 集、孔徑愈小，主要設計原則為每—層所有氣體分散孔洞 之面積總和必須小於氣體注人管線之截面積。氣體分散孔 洞的設計與配置的目的為使導入之流體均勾分散，及穿透 柵欄式UV燈管2間的孔隙到達該放置平台4。 待清洗基板進行uv/〇3乾式清洗過程為先將待清洗基 1241221 板干放於該清洗槽A内之 後即踗μ ^ μ , 罝十口 4，盍上該上蓋結構i 设即將純氧輸送至一臭氧產 產生裝置（未示於圖中），將部分 的虱*1轉換成臭氧，因此同時含 _ ^ ’乳瑕^ /臭虱的混合流體以 體1 之流量透過—可抗臭氧之注人管線被導人該不錄鋼氣 曰刀指組3,隨即啟動栅欄式㈣燈管2與抽氣裝置，於 疋導入之氧氣/臭氧混合氣體可有效分佈於該清洗槽A 内。該混合氣體先通過該氣體分散模組3第-層不錄鋼板 6之較大孔洞，再分別、經過氣體分散模組3之第2, 3及*層 (不錄鋼板7, 8, 9)予以進一步分散，透過下方的抽氣裝置二 該放置平台4周圍開設之抽氣渠道5進行適度的抽氣並排 出。抽氣渠道5其用途為進行基板清洗時配合穩定、均勻、 等速之抽氣以利導入之氣體流場可均勻分佈至待清洗基板 之表面；另一方面，此抽氣渠道5亦可提供經uv/〇3反應 後之廢棄物有效排出該清洗槽A，無污染殘留的現象產 生。最後待清洗基板上之有機污染雜質經UV與臭氧反應 分解後之產物隨即可被排出該清洗槽A之外。經過固定時 間反應之後即停止混合氣體注入並關閉uv燈管，此時可 將經過清洗之基板取出。 實施例1 (1)待清洗基板清洗後均勻度量測與驗證 11 1241221 實驗條件： UV-照射波長 Γ85/25 4 ηηΓ -- UV燈管形式 a汞燈~~^~- 不銹鋼板6的氣體分散孔洞 直徑6mm，總面積1132cm2 不銹鋼板7的氣體分散孔洞 直徑2mm，總面穑〇 snVm2 不銹鋼板8的氣體分散孔洞 直徑0.8mm，總面積〇 5〇3cm2 不銹鋼板9的氣體分散孔洞 直徑0.3mm，總面藉〇 47Srm2 純氧注入流量 1 mVh — 玻璃基板尺寸 30 cm χ 30 cm 清洗時清洗槽溫度 25°C ~~ - UV照射距離 1 cm UV照射時間 5 min 里測丄UV/臭氧清洗鈿後之水接觸角度（contact angies) 變化’评估基板上不同位置之清洗均勻度。圖3 α及3 b為 接觸角里測結果’清洗後量測接觸角結果顯示，全部量測 點皆可小於10。。目前薄膜電晶體液晶顯示器製程素玻璃清 洗後角度需小於10。。 (2)有限元素數值分析法模擬注入氣體於清洗槽内分散之 均勻度 由於有限元素法（finite element meth〇d)可適用任意的 幾何形狀，以達到程式能通用化的目的，另外亦可將所發 展的程式應用於模擬各種光洗淨機台的尺寸，以計算各種 不同設計之光洗淨機基質清洗槽的流況（n〇W pattern)，因 而能判斷各種機台的最佳化設計，有利於進行機台實際設 計操作θ之參數優化。因此本實施例利用有限元素法與搭 配投射數值模式（projecti〇n formulati〇n)，在指定設計流量 12 l24l22l 之下，模擬基質清洗槽之流場與壓力等物理量，評估流場 刀佈之均勻度，當内部流場雷諾數（Ren〇ld numb^)不高 寺即内/;,L场屬於層流（laminar flow)時，使用本方法只需 要用少量的網格即可捕捉内部流場的趨勢分布；而當内部 机場之雷諾數很面，甚至為紊流（twbulent fl〇w)時，只要網 袼的細緻程度小於流場的最小特徵尺度，則亦可精確計算 整個流場的平均運動模式（mean m〇ti〇n)。數值分析模擬結 果顯示在很短時間(t2 = 〇〇3秒)内基板表面之有機殘餘量 已經剩下約6〜7%，且此時之污染物正準備藉由抽氣渠道5 排出，多數污染物質仍存留在清洗槽内。至t6 (t6 = r秒） 時’污染物已從該光洗淨機内完全排出。 另外，亦針對傳統乾式清洗機台單側氣體注入及單侧 氧（不同邊）之，亏染物質擴散進行有限元素數值分析法模 擬。結果顯示：在時間t5At6,流場產生很大的渦漩，此渦 漩的特徵為壓力往渦漩中心逐漸降低，相反的速度卻逐漸 遞增，此種渦旋不利於污染物之擴散，因為污染物會隨著 向中心流轉而無法順利由清洗槽内排出。 圖式簡單說明 圖1顯示依本發明的一較佳具體實施例所完成的一種 UV/臭氧乾式清洗機台的示意組合立體圖。 图2 ”、、員示圖1中的氣體分散模組3的示意分解平面圖。 圖3a顯示本發明實施例}的基板的不同位置在uv/臭 氧’月洗刖之水接觸角度（contact angles)。 13 1241221 圖3b顯示本發明實施例1的基板的不同位置在UV/ 臭氧清洗後之水接觸角度（contact angles)。 圖4顯示使用習知技藝的UV或是UV/臭氧乾式清洗 機台（氣體由機台單側注入、單側抽氣）的示意清洗流程圖。 主要元件之符號說明 1··上蓋結構；2..UV燈管；3.·分散模組；4··放置平台； 5..抽氣渠道；6-9..不锈鋼板；10..基板；20..氣體分散孔洞1241221 IX. Description of the invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a dry UV light substrate cleaning method and equipment, and more particularly to a dry UV light / ozone substrate cleaning method and equipment. The previous technology "ultra-fine process" is a common trend in the development of high-end electronics industry, including deep sub-micron semiconductors, TFT_LCD, n ^ Vs communication components, ultra-precision processing, nano material manufacturing, nano electronic components and other technologies. Super fine and ultra clean development. In the development of ultra-fine micro-processes, when the process field is compressed to the molecular level, the presence of ultra-trace pollutants (including organics, metals, and particulate matter) at any link in the process environment and the variation in their concentration values will be critical. Affects the process yield, especially the component defects caused by organic pollutants are as high as 90 (3 /. Above. Although there are many key factors affecting the production yield, the most important factor is the cleanliness of the substrate. of the substrate); therefore, as the line width of components is rapidly compressed, the cleanliness requirements of the process environment are also becoming stricter. Therefore, the development of new water-saving and ultra-clean cleaning technologies will increase for the ultra-fine industry in the future in response to the high-cleanliness trend The technical base necessary for the process yield, especially in the 1C or TFT-LCD related industrial processes, it must face multiple stages of cleaning and private processes. The wafer or substrate size continues to expand, and the unit area requires water I and dissolved clams. The amount has been multiplied. Although the traditional cleaning process with multiple P white I and β washing sequences can fully clean the substrate, wet cleaning The acid, test, cleaning agent, organic solvent, etc. used in the process can no longer meet the requirements of the high cleanliness of the process 1241221 degrees. Not only the subsequent wastewater treatment and discharge problems are unavoidable, but also must be equipped with the substrate drying process. Stage: Γ Residues such as white stains are the burden of white slaves. In addition, some water-washing and semi-washing methods require the addition of hazardous organic solvents to facilitate the removal of grease and dirt. Due to international environmental awareness in recent years It has been increasing year by year. Such traditional wet cleaning processes are facing the requirements of prohibition or transformation. Many related industries that require the use of solvents are also facing pressures and crises from all walks of life. On the other hand, many alternative cleaning technologies have also been developed. Dry cleaning technology can better meet the high cleanliness and achieve high-efficiency cleaning effect. Compared with plasma and iaser cleaning technology, it needs to operate under low temperature and high vacuum ring, and equipment maintenance is not easy. And the production capacity is relatively low, because the ultraviolet ozone (uv / 〇3) cleaning method requires no vacuum, the equipment is simplified, easy to maintain, and saves money. Process cleaning time and the potential for large-scale online automation make it more competitive and productive. Improved mouth cleanliness requirements also increase the difficulty of cleaning technology development. Representative substrate dry cleaning technology. Because UV light has chemical bonds Interrupted energy, so it can be used to oxidize and decompose organic pollutants using its characteristics. At present, the common methods for generating ultraviolet light in the industry include low-pressure mercury lamps and medium-pressure mercury lamps. After the lamp tube is modified and improved, the light source output is stable. High efficiency and long-term operation will not produce high temperature. At present, the UV or UV / ozone dry cleaning machine in domestic use is designed to inject gas from the machine on one side and pump on one side (Figure 4). Achieve comprehensive and large-scale uniform cleaning. In Figure 4, the injected gas is filtered air. After entering the machine, it reacts to generate ozone, and then decomposes into oxygen atoms. The oxidizing ozone and the number of oxygen atoms pass through. Low, 1241221 has poor oxidation effect and cleaning time must be extended. In addition, the gas flow mode of unilateral injection and unilateral exhaust also makes pollutants easily trapped in the machine. The substrate 10 washed in FIG. 4 cannot be uniformly cleaned. The dots indicate the cleanest place after cleaning, the cross-points indicate the least clean place after cleaning, and the triangular points indicate that the cleanliness is in between. Gas distribution plates or gas deiivery systems are widely used in IC semiconductor manufacturing, and their applications mainly include chemical vapor deposition (CVD). Stage 'such as thin film deposition or cleaning of the CVD chamber. A search of patent literature shows that, to date, no relevant patent literature has been published for gas dispersion discs or modules for substrate cleaning. SUMMARY OF THE INVENTION A main object of the present invention is to provide a method and a device for cleaning a dry UV light substrate without the disadvantages of the prior art. The method for cleaning a dry UV light substrate disclosed in the present invention comprises the following steps: a) placing a substrate in a closed space; b) introducing a cleaning gas into the seal in a direction perpendicular to a surface to be cleaned of the substrate Space; c) irradiate a UV light perpendicularly to the surface to be cleaned of the substrate; and, d) draw air from the enclosed space through the channel below the substrate (the unlit side) and around the surface to be cleaned, and The cleaning gas is carried in the closed space of 1241221. The cleaned air contained in the clean air bag containing clean air, pure oxygen and containing step b) is removed from the preferred clean air of step b). Ozone gas or a mixture thereof. Better gas mixture of milk and ozone. Preferably, the UV sub-ultraviolet lamp of step e). The source of light includes a low-pressure mercury lamp or a quasi-substrate suitable for carrying out the method of the present invention. <Π Dead substrates include glass substrates, silicon wafers, quartz wafers, or color samples. . After the glass substrate has been subjected to steps b) to d) 151 B master, & V-) for a period of time, the cleaned surface of the glass substrate has a water contact angle of less than 1G degree. The invention also discloses a dry-type UV light substrate cleaning device, comprising: a cleaning tank; a substrate placing platform to be cleaned arranged in the cleaning tank, wherein the placing platform and the groove of the cleaning tank surround the A suction channel for a platform; an upper cover structure, which is air-tightly combined with the cleaning tank and can be opened, and includes a gas dispersion module and a plurality of UV lamps, wherein the gas dispersion module has the same plane A plurality of gas dispersion holes; when the upper cover structure is air-tightly coupled to the cleaning tank, the plurality of UV lamp officials are located above the placing platform, and the plurality of UV lamp tubes and the placing platform are parallel to each other; and A plane having a plurality of the gas dispersion holes is parallel to the placement platform via the plurality of UV lamp tubes. Preferably, the gas dispersion module includes multiple layers of gas dispersion plates parallel to each other, wherein each layer of gas dispersion plates has equally spaced gas dispersion holes, and the size of the gas dispersion holes of each layer of gas dispersion plates is separated from the placement platform. The one that is furthest to the nearest to the placement platform gradually shrinks. More preferably, the total area of the gas dispersion holes in each layer of the gas dispersion plate gradually decreases from the farthest from the placement platform to the closest to the placement platform. In a preferred embodiment of the present invention, the gas dispersing plate of the gas dispersing module package 34 layers parallel to each other has a gas dispersing hole that is farthest from the placement platform, and has four gas dispersing holes, and The gas dispersion plate closest to the placement platform had 676 gas dispersion holes with a diameter of G3 mm. Preferably, the plurality of UV lamp tubes are barrier-type low-pressure mercury lamps or excimer lamps. Preferably, the placement platform is connected to a micro-servomotor, so that the micro-servoir can be used. The driving of the motor precisely adjusts the vertical distance from the placing platform to the plurality of lamp officials. The vertical distance that the placing platform can move is ~ 5 · 8 cm. Preferably, the placing platform is provided with a heating device. Through the design and installation of the gas dispersion module of the present invention, the cleaning gas is led to the gas dispersion module at a certain flow rate in cooperation with the equidistant channels around the platform on which the cleaning tank is placed, and the cleaning tank is also exhausted and The action of exhaust makes the introduced cleaning gas be effectively and uniformly dispersed on the surface of the board to be cleaned, so that the pollutants adhered to the surface of the substrate to be cleaned and the imported cleaning gas fully function, and the products after decomposition can be completely discharged. / Monthly, there is no concern about the sluggish accumulation of pollutants. In addition, in this case, the finite element numerical analysis method was used to simulate the uniform airflow distribution in the cleaning tank 1241221 to verify the flow field distribution in the cleaning tank. The results show that the case is clear. The degree of exhaustion and airflow distribution are all 2 degrees, which is better than the unilateral air intake and extraction method currently used in actual factories = the concentration of pollutants in the cleaning tank of the washing machine is taken out and the airflow is evenly distributed. Conditions such as poor degree obviously have a significant improvement effect. Embodiment 1 A UV / ozone dry cleaning machine completed according to a preferred embodiment of the present invention is shown in FIG. 1, and the entire mechanism of the machine is made of stainless steel. ~ The hexaoxygen dry cleaning machine includes an upper cover structure 1, which is provided with a gas knife module 3, and a barrier-type UV lamp tube 2, which can effectively shorten the distance between the lamp tubes; and a π washing tank A, which is provided with a The substrate 4 to be cleaned is placed on a platform 4, and a micro servo motor (not shown in the figure) is connected below the placement flat port 4, so that the distance between the substrate to be cleaned 4 and the uV lamp tube 2 can be accurately trimmed, wherein the placement The four sides below the platform 4 are provided with equal-length elongated exhaust channels 5. Figure 2 = Detailed design drawing of this milk dispersion module 3. Gas Dispersion Module] is a multi-layer scoping meter, from the top to the bottom, a total of four layers of stainless steel plates 6, 丨 8, 9, each layer of non-scale steel plate is drilled with gas dispersion holes 20 at a fixed distance, and its distribution is from above The diameter of the holes in the lower layer tends to shrink. The lower the holes, the denser the holes and the smaller the pore diameter. The main design principle is that the total area of all the gas dispersion holes in each layer must be smaller than the cross-sectional area of the gas injection pipeline. The purpose of designing and disposing the gas dispersion holes is to make the introduced fluid evenly dispersed, and penetrate the pores between the barrier-type UV lamp tubes 2 to reach the placement platform 4. The UV / 〇3 dry cleaning process for the substrate to be cleaned is to first place the substrate 1241221 to be cleaned in the cleaning tank A, and then 踗 μ ^ μ, 罝 10 mouth 4, and the upper cover structure i is set to deliver pure oxygen. To an ozone production device (not shown in the figure), some lice * 1 are converted into ozone, so the mixed fluid containing _ ^ '乳 乳 ^ / stink lice at the same time passes through the flow of body 1-which can resist ozone The injection pipeline is guided by the non-recording steel finger set 3, and then the fence-type cymbal lamp tube 2 and the air extraction device are activated, and the oxygen / ozone mixed gas introduced in the cymbal can be effectively distributed in the cleaning tank A. The mixed gas first passes through the larger holes of the first layer of the gas dispersion module 3 without recording the steel plate 6, and then passes through the second, third, and * layers of the gas dispersion module 3 respectively (without recording steel plates 7, 8, 9) It is further dispersed, and a proper suction is performed through a suction channel 5 opened around the placement platform 4 under the second suction device 2 and discharged. The extraction channel 5 is used for the substrate cleaning with a stable, uniform, and constant-speed extraction to facilitate the introduction of the gas flow field to the surface of the substrate to be cleaned; on the other hand, this extraction channel 5 can also provide The waste after the UV / 〇3 reaction is effectively discharged from the cleaning tank A, and no pollution remains. Finally, the organic contamination impurities on the substrate to be cleaned can be discharged out of the cleaning tank A after being decomposed by the reaction between UV and ozone. After a fixed time reaction, stop the mixed gas injection and turn off the UV lamp. At this time, the cleaned substrate can be taken out. Example 1 (1) Uniform measurement and verification after cleaning the substrate to be cleaned 11 1241221 Experimental conditions: UV-irradiation wavelength Γ85 / 25 4 ηηΓ-UV lamp form a mercury lamp ~~ ^ ~-Gas of stainless steel plate 6 Dispersion hole diameter 6mm, total area 1132cm2 Gas dispersion hole diameter of stainless steel plate 7 2mm, total surface 穑 0snVm2 Gas dispersion hole diameter of stainless steel plate 8 0.8mm, total area 0503cm2 Gas dispersion hole diameter of stainless steel plate 9 0.3mm The total surface is 〇47Srm2 pure oxygen injection flow rate 1 mVh — glass substrate size 30 cm χ 30 cm cleaning tank temperature during cleaning 25 ° C ~ ~-UV irradiation distance 1 cm UV irradiation time 5 minutes measurement UV / ozone cleaning 丄Change of contact angies after water 'evaluates the uniformity of cleaning at different positions on the substrate. Fig. 3 α and 3 b are the results of contact angle measurement. The results of contact angle measurement after cleaning show that all measurement points can be less than 10. . At present, the thin-film transistor liquid crystal display manufacturing process requires the glass to be cleaned at an angle of less than 10. . (2) The finite element numerical analysis method simulates the uniformity of the dispersion of the injected gas in the cleaning tank. The finite element method (finite element method) can be applied to any geometric shape to achieve the purpose of generalization of the program. The developed program is used to simulate the size of various light washing machines to calculate the flow pattern (n0W pattern) of substrate washing tanks of light washing machines of various designs, so it can judge the optimal design of various machines It is beneficial to optimize the parameters of the machine's actual design operation θ. Therefore, in this embodiment, the finite element method and the projecti0n formula are used to simulate the physical fields such as the flow field and pressure of the substrate cleaning tank under the specified design flow rate of 12 l24l22l to evaluate the uniformity of the knife in the flow field. Degree, when the internal flow field Reynolds number (Renald numb ^) is not high, that is, / ;, the L field belongs to laminar flow, using this method requires only a small number of grids to capture the internal flow field. Trend distribution; when the Reynolds number of the internal airport is very large, or even twbulent fl (twbulent fl0w), the average motion of the entire flow field can be accurately calculated as long as the fineness of the netting is less than the minimum characteristic scale of the flow field. Mode (mean mode). Numerical analysis and simulation results show that within a short time (t2 = 0.003 seconds), about 6 to 7% of the organic residual amount on the substrate surface has been left, and the pollutants at this time are preparing to be discharged through the exhaust channel 5, most of them Contaminants remain in the cleaning tank. By t6 (t6 = r seconds), the contaminants have been completely discharged from the light washer. In addition, the finite element numerical analysis method is also used to simulate the diffusion of defective materials on the single-sided gas injection and single-sided oxygen (different sides) of traditional dry cleaning machines. The results show that at time t5At6, a large vortex is generated in the flow field. This vortex is characterized by a gradual decrease in pressure towards the center of the vortex, but a gradual increase in the opposite speed. This vortex is not conducive to the diffusion of pollutants because of pollution. As the material flows to the center, it cannot be smoothly discharged from the cleaning tank. Brief Description of the Drawings Figure 1 shows a schematic combined perspective view of a UV / ozone dry cleaning machine completed according to a preferred embodiment of the present invention. Fig. 2 "shows a schematic exploded plan view of the gas dispersion module 3 in Fig. 1. Fig. 3a shows different positions of the substrate in the embodiment of the present invention} at the UV / ozone 'contact angles of water washing (contact angles). 13 1241221 Figure 3b shows the contact angles of water at different positions of the substrate of Example 1 of the present invention after UV / ozone cleaning. Figure 4 shows a UV or UV / ozone dry cleaning machine using conventional techniques ( The gas is injected from the machine on one side and pumped on the other side). The symbol description of the main components: 1. Upper cover structure; 2. UV lamp; 3. Dispersion module; 4. Placement platform; 5. Extraction channel; 6-9 .. Stainless steel plate; 10 .. Base plate; 20 .. Gas dispersion hole
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