1240964 五、發明說明（/ ) 本發明係關於一種砷化鎵晶棒之切义 刀片刖製程，尤指一 禋可有效降低晶棒切片時發生邊缝产 生邊緣脆裂機率，進而顯著提 π切片良率之晶棒表面處理方法。 按’ 一般晶圓製程大致包括如下步驟： 1 ·外圓輪磨 係對長成後的晶棒進行輪磨，以修整晶棒之不規則表 面使其呈適當的圓截面及所需的外徑。 、 2.切片（Slicing) 一般晶圓切片係採内徑鋸或線鋸（WIRE SAW)方式，且 晶棒在切片前預先黏貼一石墨板，除利於切片的夾持，另 可避免在最後切斷階段時鋸片離開晶棒所造成的破裂。 3·圓邊（Edge Grinding) 線 剛切好的晶圓，其邊緣垂直於切割平面為銳利的直角 ，由於矽單晶硬脆的材料特性，此角極易崩裂，不但影響 晶圓強度，更成為製程中污染微粒的來源，且在後續的半 導肢製成中，未經處理的晶圓邊緣也為影響光阻與遙晶声 之厚度，故須針對切片後晶圓的邊緣形狀與外徑尺寸進行 修整。 經濟部智慧財產局員工消費合作社印製 4·研磨（Lapping) 研磨的目的在於除去切割所造成的鋸痕及表面破壞層 ’同時使晶圓表面達到可進行拋光處理的平坦度與厚度。 5·银刻（Etching) 晶圓經前述加工製程後，表面因加工應力而形成一層 損傷層（damaged layer)，在拋光之前必須以化學蝕刻 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1240964 A7 —----- -—_B7___ 五、發明說明（《> ) 的方式予以去除。 6·拋光（P〇l ishing) 晶圓的拋光，依製程可區分為邊緣拋光與表面拋光兩 種： 6· 1 ·邊緣拋光（Edge Pol ishing )主要目的在於改 善晶圓邊緣之表面粗度，降低微粒（particle)附著於晶 圓的可能性，並使晶圓具備較佳的機械強度，但需要的設 備昂貴且技術層面較高。 6.2.表面拋光（surface p〇iishing)是晶圓加工處 理的最後一道步驟，移除晶圓表面厚度約1〇 — 2〇微米，以 改善前述製程中遺留下的表面改質及次表層之損傷，並取 付局部平坦度的極佳化。 請 先 閱 讀 背 面 濟 部 智 慧 財 產 局 消 費 合 社 印 製 由上述可知，一般矽晶圓製程係先令晶棒進行外圓專 磨後再予切片。然而此—方式對於脆性較高料化鎵晶本 二可能出現較高的不良率。主要原因在於神化鎵晶棒脆七 切片時容易造成晶棒表面的脆裂，並在晶圓邊緣產4 微小的裂痕’而在後續的晶圓製程中極容易發生破片 晶圓製程的良率。有關此一問題顯然有待檢詞 並4求可行的解決方案。 片時：：邊t發明主要目的在提供一種可有效降低晶棒切 而a 4緣脆裂機率’進而顯著提高 面處理方法。 民千·^日日棒表 為達成前述目的採取的主要 對長成晶棒進行以下步驟·· 又係7别述方法針 本紙張尺度適用中國 國家標準（CNS)A4規格咖 297公釐） --------1240964 V. Description of the invention (/) The present invention relates to a cutting blade cutting process of a gallium arsenide ingot, especially one that can effectively reduce the probability of edge brittleness in the edge seam when slicing the ingot, thereby significantly improving the π slice. Surface treatment method of crystal rod with good yield. According to the general wafer process, it generally includes the following steps: 1 · Cylindrical grinding is performed on the grown ingots to modify the irregular surface of the ingots so that they have a proper circular cross-section and the required outer diameter. . 2. Slicing Generally, wafer slicing adopts the internal diameter saw or wire saw (WIRE SAW) method, and the ingot is affixed with a graphite plate before slicing, which is not only conducive to the holding of the slice, but also avoids cutting at the end. Fracture caused by the saw blade leaving the ingot during the breaking phase. 3. Edge Grinding Wafers that have just been cut. The edges are perpendicular to the cutting plane and are sharp right angles. Due to the hard and brittle material characteristics of silicon single crystals, this corner is very easy to crack, which not only affects the strength of the wafer, but also Become a source of contamination particles in the process, and in the subsequent fabrication of the semi-conductive limbs, the edge of the untreated wafer also affects the thickness of the photoresist and the remote crystal sound, so the edge shape and outer edge of the wafer after slicing must be targeted. Diameter size for trimming. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4. Lapping The purpose of lapping is to remove saw marks and surface damage caused by dicing ′ and to make the wafer surface flat and thick enough to be polished. 5. · Etching After the aforementioned processing process, a damaged layer is formed on the surface due to processing stress. Before polishing, the wafer must be chemically etched. This paper is sized according to Chinese National Standard (CNS) A4 (210 X 297 mm) 1240964 A7 —----- -—_ B7___ 5. The method of description of invention (">)" has been removed. 6. Polishing (Poll ishing) Wafer polishing can be divided into two types of edge polishing and surface polishing according to the process: 6 · 1 · Edge polishing (Edge Pol ishing) The main purpose is to improve the surface roughness of the wafer edge, The possibility of particles attaching to the wafer is reduced, and the wafer has better mechanical strength, but the equipment required is expensive and the technical level is high. 6.2. Surface polishing is the last step of wafer processing. The thickness of the wafer surface is removed by about 10-20 microns in order to improve the surface modification and subsurface damage left in the previous process. , And to optimize the local flatness. Please read the print from the Consumer Electronics Co., Ltd. of the Ministry of Economic Affairs and Intellectual Property of the Ministry of Justice. As can be seen from the above, in the general silicon wafer manufacturing process, the ingots are first ground and then sliced. However, this method may cause a higher defect rate for the more brittle material gallium crystals. The main reason is that the sintered gallium ingot is brittle and susceptible to embrittlement on the surface of the ingot during slicing, and 4 micro-cracks are produced on the edge of the wafer. Obviously there is a word to be answered about this problem and to find a feasible solution. Time: The main purpose of the invention is to provide a method for effectively reducing the ingot brittle cracking probability of a4 edge and thereby significantly improving the surface treatment method. Minqin ^ Day-Day Bar Table mainly adopts the following steps for growing ingots in order to achieve the aforementioned purpose. It is also 7 different methods. The paper size is applicable to China National Standard (CNS) A4 size coffee 297 mm)- -------
訂 vOrder v
·! I 1240964·! I 1240964
經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
外圓輪磨，係利用輪磨機輪磨晶棒外圓，使其形 須外徑； ^ 表面抛光步驟，利用布輪或其他適當的拋光工具在切 片則改變晶棒表面的粗糙度； 切片’利用線切割機將晶棒切成薄片； 由於晶棒在切片前即先經過拋光步驟，其顯著改變了 曰曰棒表面的粗糙度，在切片時即可避免晶棒表面碎裂，故Cylindrical wheel grinding is the use of a wheel mill to grind the outer diameter of the crystal rod to make it the outer diameter of the whisker. ^ In the surface polishing step, using a cloth wheel or other appropriate polishing tool to change the surface roughness of the crystal rod during slicing; slicing 'Use a wire cutting machine to cut the ingot into thin slices; since the ingot is first polished before the slicing, it significantly changes the roughness of the surface of the rod, and can prevent the surface of the ingot from chipping during slicing, so
可有效避免在隨後的製程中發生碎片現象，而影響產品 率。 a R 前述的表面拋光步驟係由一布輪構成，其與晶棒表面 作相對方向之滾動，利用布輪的磨擦以消除晶棒表面在經 過外圓輪磨後的殘留應力。 為使貴審查委員進一步瞭解前述目的及本發明之技 術特徵，茲附以圖式詳細說明如后·· (一） 圖式部分： 第一圖A ··係本發明進行切邊步驟之示意圖。 第一圖B :係本發明進行外圓輪磨步驟之示意.圖。 第二圖：係本發明進行表面拋光步驟之示意圖。 (二） 圖號部分： (1 0 )晶棒 （2 0 )布輪 按，本發明主要係在晶棒進行切片（SHcing)以前， 先進行一表面拋光處理步驟，以改善晶棒表面的粗糙度， 避免晶棒表面在切片時產生脆裂現象，而有效提高晶圓製 程之良率。有關本發明之流程大致包括以下步驟： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閒讀背面之注意事項再填寫本頁) ————訂-— — —.---線 « 1240964 A7 B7 示 五、發明說明（ 切邊.係先將晶棒兩端之尖錐段切除（如第—圖A所 外圓輪磨：係利用輪磨機輪磨晶棒外圓，使 需的直徑或大小（晶棒不特定為圓形截面如第 所不），此時晶棒的表面粗度:〗〇〇⑽以上。 表面拋光：係利用布輪或其他適當的拋光工 外圓表面處進行抛光處理，以期在切片前改變晶棒表= 粗糙度及輪磨外圓所留下之變質層；除此以外， ，上用於識別的平邊或凹槽（nGtch)進行表面拋光；於: 貫施例中’係利用布輪對晶棒外圓表面進行拋光處理，如 第二圖所示，該布輪（2 0)係透過動力傳動而產生運 動作’又令晶棒（1 0 )本身亦作運轉動作，其運轉方向 與:輪（2 0 )適呈相對關係，當布輪（2 〇 )以其輪面 與曰曰棒（1 0 )表面接觸’透過二者的相對運轉，即可利 用布輪j 2 0 )的相對磨擦改變晶棒（工〇 )表面的粗糙 度並消除晶棒（工〇 )表面經過外圓輪磨後形成的殘留 應力，此時晶棒的表面粗度下降至Rmax:10以下。 切片·如利用線切割機或其他切片工具將晶棒切成薄 片。 前述晶棒經過切片’即可續行其他傳統的晶圓製程， 如： 圓邊（Edge Grinding) ·•用以處理晶圓邊緣銳利的 切割平面； 研磨（Lapping or Grinding):用以除去切割所造 本紙張尺度標準（CNS^7i^1G x 297公釐） 先 閱 讀 背 面 之 意 事 項 填t J t 頁； 訂 經濟部智慧財產局員'工消費合作社印製 1240964 五 、發明說明（厂） 面破壞層’使晶圓表面達到進行拋光處理所 蝕刻（Etching) ··係在拋光之前以化學钱刻方式去 除晶圓因前述加工而形成的損傷層； ，伯貧^ ( PQliShlilg) ·係針對晶圓表面進行拋光處理 ’使/、表面具有鏡面之效果。 在，述製程中，由於晶棒在切片前即先經過抛光步驟 ’其顯者改變了晶棒表面的粗糙度’其切片時即可有效避 免晶棒表面產生碎裂的機率，進而可有效避免在隨後的製 転中發生碎片現象，故可有效確保產品良率。 由上述說明可看出本發明改善晶圓製程中晶棒切片時 容易在表面形成脆裂，而在晶圓的後製程中可以有效減少 碎片的機會，以該等設計至少具備下列特色·· 1 ·去除輪磨之殘留應力，可避免晶棒切片時產生表 面脆裂情事，因而可有效提高晶棒切片之良率。 經濟部智慧財產局員工消費合作社印製 2在切片刖顯著改變晶棒表面的粗糙度（由: 100⑽下降至l〇nm級），使其切片時避免或減少晶圓周邊 之裂痕，以有效避免往後製程中發生碎片的現象。 綜上所述，本發明確已具備如前揭所述的各項優點， 其對於既有晶圓製程具有顯著的產業上利用性、實用性與 進步性，並符合發明專利要件，爰依法提起申請。' 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱）It can effectively avoid the occurrence of debris in the subsequent process, which affects the product rate. a R The aforementioned surface polishing step consists of a cloth wheel, which rolls in the opposite direction to the surface of the ingot. The friction of the cloth wheel is used to eliminate the residual stress on the surface of the ingot after grinding by the outer wheel. In order to make your reviewers better understand the foregoing objectives and the technical features of the present invention, detailed drawings are attached as follows: (a) Schematic part: The first figure A is a schematic diagram of the cutting steps of the present invention. The first figure B is a schematic diagram of the step of performing external cylindrical grinding according to the present invention. FIG. 2 is a schematic diagram of a surface polishing step according to the present invention. (2) Part of drawing number: (1 0) Ingot (2 0) cloth wheel press, the present invention is mainly performed before the ingot is sliced (SHcing), a surface polishing treatment step is performed to improve the roughness of the ingot surface It can avoid the occurrence of brittle cracks on the surface of the ingot during slicing, and effectively improve the yield of the wafer process. The process related to the present invention generally includes the following steps: The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the precautions on the back before filling out this page) ———— Order-— — —.--- Line «1240964 A7 B7 Showing the fifth, the description of the invention (cutting edge. First cut off the sharp cone section at both ends of the ingot (such as the outer round grinding of Figure-Figure A: the use of wheel mill wheels Grind the outer circle of the crystal rod to the required diameter or size (the crystal rod is not specifically a circular cross section as described above). At this time, the surface roughness of the crystal rod is: 〇〇〇⑽. Surface polishing: using a cloth wheel or Other suitable polishers are polished at the surface of the outer circle in order to change the surface of the ingot before slicing = the roughness and the deterioration layer left by the grinding of the outer circle; in addition, the flat edges or concaves used for identification Groove (nGtch) for surface polishing; in: in the examples, 'the cloth wheel is used to polish the outer surface of the crystal rod, as shown in the second figure, the cloth wheel (2 0) moves through power transmission Make 'and make the crystal rod (1 0) itself also make a running action, its running direction and: wheel (2 0) In a relative relationship, when the cloth wheel (20) is in contact with the surface of the rod (1 0) through its relative movement, the relative friction of the cloth wheel (j 2 0) can be used to change the crystal rod (tool). 〇) Roughness of the surface and elimination of residual stress formed on the surface of the ingot (circle) by external cylindrical grinding. At this time, the surface roughness of the ingot decreases to below Rmax: 10. Slicing · If using a wire cutter or other The slicing tool cuts the ingot into thin slices. The aforementioned ingot can be sliced to continue other traditional wafer processes, such as: Edge Grinding · • Used to handle the sharp cutting plane of the wafer edge; Lapping or Grinding): Used to remove the paper size standards (CNS ^ 7i ^ 1G x 297 mm) made by cutting. Read the meanings on the back and fill in t J t pages; Order by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives 1240964 V. Description of the invention (factory) The surface damage layer 'makes the wafer surface to be etched by polishing (Etching) ... Before the polishing, the damage layer formed by the foregoing processing is removed by chemical etching; ^ (PQ liShlilg) · The wafer surface is polished to make the surface mirror effect. In this process, because the ingots undergo a polishing step before slicing, the surface roughness of the ingots is changed. 'The slicing can effectively avoid the possibility of chipping on the surface of the ingot, and can effectively avoid the occurrence of chipping in the subsequent process, so it can effectively ensure the product yield. From the above description, it can be seen that the present invention improves the wafer During the process of slicing the crystal rod, it is easy to form brittle cracks on the surface, and the chance of debris can be effectively reduced in the post-processing of the wafer. These designs have at least the following characteristics. · 1 · Removal of residual stress from wheel grinding can avoid crystal Surface embrittlement occurs during rod slicing, which can effectively improve the yield of crystal rod slicing. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 Significantly changes the roughness of the surface of the ingot during slicing (decreased from: 100 至 to 10nm level) to avoid or reduce cracks around the wafer during slicing to effectively avoid Fragmentation occurs in subsequent processes. In summary, the present invention does have all the advantages described above, which has significant industrial applicability, practicability, and progress for the existing wafer process, and meets the requirements of the invention patent. Application. '' This paper size applies to China National Standard (CNS) A4 (210 X 297 public love)