TWI240837B

TWI240837B - Array substrate with repaired defective wiring and repairing method thereof

Info

Publication number: TWI240837B
Application number: TW92135840A
Authority: TW
Inventors: Hisanori Kinoshita
Original assignee: Chi Mei Optoelectronics Corp
Priority date: 2002-12-17
Filing date: 2003-12-17
Publication date: 2005-10-01
Also published as: JP4243477B2; JP2004200297A; TW200411300A

Abstract

The present invention provides an array substrate including a resin film with repaired defective wirings (open-circuited or short-circuited wirings) on the array substrate, and also the repairing method thereof. In the present invention bypass lines 28 are formed between a pair of contact holes 22. The contact holes 22 are formed such that they penetrate from the surface of a resin film 20 until a wiring 16. In the inner walls of the contact holes 22 the portion of the resin film 20 is formed in a tapered shape. Because of the tapered shape of the resin film 20, it is possible to form wirings in the contact holes 22, which was difficult in the past.

Description

12408371240837

五、發明說明（1) 一、【發明所屬之技術領域】本發明係有關於以液晶顯示哭陣列基板之配線上，晶修補之斷表之平板顯示器之陣列基板及其修補方法。、、3疋短路之不良配線之二、【先前技術】板顯示器，不論是個人電使用。使用於平板顯示器、開關元件、電極等配置示器朝向大型化以及高度極線、信號線、開關元件V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention relates to an array substrate of a flat panel display and a repair method for a flat-panel display with broken crystals on the wiring of the array substrate using a liquid crystal display. 3, 3 疋 Short circuit bad wiring 2 [Previous technology] Panel display, whether it is for personal use. Used for flat panel displays, switching elements, electrodes, etc. The size of the display is increasing, and the height of the polar lines, signal lines, and switching elements

近年來，液晶顯示器等之平腦或是電視，在許多領域上受到上之陣列基板，係將複數之配線於玻璃基板上。隨著需求平板顯精密化前進，隨著高精密化，閘亦向細微化前進。陣列基板’乃是將閘極線、作關元件等之材料加以層積，重複2線J極絕緣膜、保曰傾里设地進行I虫刻加以制冰士 =陣2基板時，存在有因陣列基板上附著有異二是刻失誤荨而造成信號線等開放，也：圖4⑷所示般，陣列基㈣，存在有因㈣失=造= 置於玻璃基板12上之信號線16斷線之場合。在此場合中信號線1 6之修補方法為以下之程序。 0In recent years, an array substrate, such as a liquid crystal display or a television, has been used in many fields, and a plurality of wirings are wired on a glass substrate. As demand for flat-panel displays becomes more sophisticated, and as high-precision becomes available, the gates are also being refined. Array substrate 'is a method of laminating materials such as gate lines and gate elements, repeating the 2-wire J-pole insulating film, and carrying out the worm engraving and making ice cubes. The signal lines and other signals are opened due to the misalignment attached to the array substrate. Also, as shown in Figure 4 (b), there is a loss in the array substrate. The signal line 16 on the glass substrate 12 is broken. Line occasions. In this case, the repair method of the signal line 16 is the following procedure. 0

如圖4(a)所示般，以脈衝雷射34將接觸孔“由披覆絕、、彖膜1 8之表面到彳5號線1 6為止加以開啟。開啟接觸孔4 6之位置，係在斷線部分32附近之信號線16。如圖所示般開啟對接觸孔4 6。例如，脈衝雷射3 4之輸出係由〇 · 2mJ到1 · OmJ。又，因檢測雷射之輸出之能源監視器以及檢測位置’存在有產生誤差之場合。As shown in FIG. 4 (a), the contact hole is opened from the surface of the diaphragm 18 to the 彳 5 line 16 with a pulse laser 34. The position of the contact hole 46 is opened. The signal line 16 is near the disconnected portion 32. As shown in the figure, the contact hole 46 is opened. For example, the output of the pulse laser 34 is from 0.2 mJ to 1.0 mJ. Also, due to the detection of the laser There may be an error in the output energy monitor and detection position.

1240837 五、發明說明（2) 在開啟一對接觸孔46之後，如圖4(b)所示般，形成觸點48。更如圖4(G)所示|，形成旁路線28。接觸點^與旁路線28之形成，係以CVD(化學蒸氣沉澱法）加以進行二接觸點48與旁路線28形成時，使用cw(連續波）雷射％，八 CW雷射36在彼覆絕緣膜丨8頂面加以掃描。例如，cw雷射7 之輸出為2mW到40mW，掃描速度為〇. 5 #m/sec到3 # m/sec。藉由以上之程序，如圖4(d)所示般，形成旁路 28，完成信號線16之修補。 β 因異物而造成斷線時，會在披覆絕緣膜18之表面上生凹凸，或者是:異物突出於披覆絕緣膜18之表面上所旁路線28之形成變得困難。 -前述陣口基板之披覆絕緣膜18上形成樹脂膜2 列基板。利用在信號線與像素電極之間設置樹脂膜之方式，可使信號線與像素電極加以重疊，提高開口率，級和因信號線與像素電極間其容量成分所造成之 π ( = ss talk)之影響。又，利用設置樹脂膜之方式‘使列基板表面平坦化，能夠抑制配向不良。在形成有樹脂膜之陣列基板方面中之修方法並未受到確定。例*，樹：：之= 為止之接觸孔日夺，接觸孔合二；由樹月曰膜表面到信號線對其内壁進行CVD而照射cw雷射係相當困難。又-度為了間、以雷射照射樹脂膜後，存在長寸融之溫度之危險發生。因此 f値度a上升到樹脂膜溶危險U目此，無法形成充分之接觸點。同1240837 V. Description of the invention (2) After opening a pair of contact holes 46, as shown in FIG. 4 (b), a contact 48 is formed. As shown in FIG. 4 (G), a bypass line 28 is formed. The formation of the contact point ^ and the bypass line 28 is performed by CVD (chemical vapor deposition method). When the contact point 48 and the bypass line 28 are formed, a cw (continuous wave) laser% is used, and eight CW lasers 36 cover each other. The top surface of the insulating film is scanned. For example, the output of cw laser 7 is 2mW to 40mW, and the scanning speed is 0.5 # m / sec to 3 # m / sec. By the above procedure, as shown in FIG. 4 (d), a bypass 28 is formed to complete the repair of the signal line 16. β When a disconnection is caused by a foreign object, unevenness may be formed on the surface of the covering insulating film 18, or it may be difficult to form a bypass line 28 where the foreign object protrudes from the surface of the covering insulating film 18. -Two rows of substrates of resin film are formed on the covering insulating film 18 of the array substrate. By using a resin film provided between the signal line and the pixel electrode, the signal line and the pixel electrode can be overlapped to increase the aperture ratio, and π (= ss talk) caused by the capacity component between the signal line and the pixel electrode Influence. In addition, by using the method of providing a resin film, the surface of the column substrate is flattened, and alignment defects can be suppressed. The repair method in the array substrate on which the resin film is formed has not been determined. Example *, tree :: The contact holes are up to now, and the contact holes are combined; it is very difficult to irradiate the cw laser system by CVD from the surface of the tree to the signal line. If the resin film is irradiated with laser light for a short period of time, there is a danger of long-term melting temperature. Therefore, the degree of f 上升 rises to the point where the resin film dissolves dangerously, and a sufficient contact point cannot be formed. with

1240837 五、發明說明（3) 樣地在樹脂成樹脂膜溶在形成 k说線加以因為在形成般的陣列測陣列基配線產生短有在複數之以矯正之方線。透過將短路。在特存在有樹脂列基板之場法’對於在二、【發明【發明所欲本發明之目經修補之斷法0 膜上形融之危樹脂膜標定，樹脂膜試器檢板中，路之場層間存法。透短路部開 2 0 0 1 膜之陣合中，樹脂膜内容】解決之的，係線或是成旁路線時，存在有因雷射之能源而、生險發生。 & 之前檢查斷線的話，即使能夠將斷線之卻無法將斷線之位置加以標定。此乃是之後形成像素電極，並未形成可利用: 查斷線之構成之陣列基板。配線係配置於複數之層中，在層間存在合。在特開2 0 0 1 - 77 1 98號公報中，提出在有短路之場合時，使用雷射將短路加過雷射CVD在披覆絕緣膜上形成旁路分加以分離般將配線切斷之方式，矯正一 7 Π 9 8號公報中所記載之方法，對於不列基板相當有效。在設置有樹脂膜之陣在特開20 0 1 -7 7 1 9 8號公報中所記载之方上形成旁路線係如同上述般相當困難。問題】以在具有树脂膜之陣列基板方面，提供短路等不良配線的陣列基板及修補方【發明所欲解決之方法】之配線：m之陣列基板’係包含有基板、基板上複數基板，罝由士上之，緣膜、以及絕緣膜上之樹脂膜之陣列一中含有：前述複數之配線中，因斷線而劃分為21240837 V. Description of the invention (3) Samples are dissolved in the resin and the resin film is formed in the formation of the k-line, because the formation of the array is common, and the array-based wiring is short. It will short-circuit through. In the field method with a resin substrate, there is a calibration method for the resin film in the second, [invention [the purpose of the invention, the repaired method of the invention], the resin film calibration on the resin film test, Field layer interstitial method. Through the short-circuiting section, the film is being assembled, and the resin film is used. [Contents] When the cable is connected or bypassed, there is a risk of laser energy. & If the disconnection is checked before, the position of the disconnection cannot be calibrated even if it can be disconnected. This is to form a pixel electrode afterwards, but not to form an array substrate that can be used: check line structure. The wiring is arranged in a plurality of layers, and there is a connection between the layers. In Japanese Patent Application Laid-Open No. 2000-77 1 98, when there is a short circuit, it is proposed to use a laser to short-circuit the short circuit plus laser CVD to form a bypass on the coated insulating film and separate the wiring. As a method, the method described in Japanese Patent Publication No. 7 Π 98 is quite effective for non-line substrates. Forming a bypass line in a matrix provided with a resin film as described in Japanese Patent Application Laid-Open No. 20 1-7 7 1 98 is as difficult as described above. Problem] In terms of array substrates with resin films, array substrates that provide poor wiring such as short circuits and repair methods [methods to be solved by the invention] wiring: m array substrates include substrates, multiple substrates on the substrate, 罝From the above, the first film of the margin film and the resin film on the insulating film contains: The above-mentioned plural wirings are divided into 2 due to disconnection.

1240837 五、發明說明（4) 之配線、由樹脂膜且將樹脂膜内壁形‘已二：貫穿到前述劃分為2之配線由一對接觸孔形成旁路壤妾之旁路線。本發明係經以連接。接觸孔膜：：Γ線而劃分為2之配線加 :弋内壁“，將樹脂膜之部分形配線。在樹斜。由於形成推拔狀，彳進行在以往^拔狀’使内壁傾配線之形成。車Λ為困難之接觸孔其述樹脂膜部分之接觸配線部分之接觸孔之大小更大。係、較前述絕緣膜以及複數之：二：列基板，係包含有基板、基板上第1絕緣膜^ Λ' Λ /下層配線上之第1絕緣膜、經由層配線上:Λ層線作立體交又之複數之上層配線、上板，i中人古2絕緣膜、第2絕緣膜上之樹脂膜之陣列基部份ΐ，=:在前述上層配線與下層配線作立體交叉之由料I胳ί層配線與下層配線加以短路之層間短路部、部之:署了炎面起貫穿到失持前述上層配線中前述層間短路 =、置f止，且將樹脂膜内壁形成推拔狀之一對接觸 ^過別述一對接觸孔與上層配線相連接之旁路線、前 ^ θ配線中由前述一對接觸孔所夾持，且在前述層間短 :之位置處，將上層配線之層間短路部加以分離之斷線路部t ί日!係經由一對接觸孔形成旁路線，透過將層間短 . I| "卩加以分離之方式，將短路之配線加以修補。萄孔係由樹脂膜表面起分別貫穿到配線。在樹脂膜之内1240837 V. Description of the invention (4) The wiring is made of resin film and the inner wall of the resin film is ‘two: the wiring that runs through the aforementioned division into two. The bypass line is formed by a pair of contact holes. The present invention is connected. Contact hole film :: Γ line and wiring divided into 2 plus: "inner wall", part of the resin film is wired. In the tree oblique. Due to the formation of push-pull shape, it is carried out in the past ^ pull shape to make the inner wall tilt the wiring It is a difficult contact hole. The size of the contact hole in the contact wiring part of the resin film portion is larger. Compared with the foregoing insulating film and plural ones: two: a row substrate, which includes a substrate and a first insulating film on the substrate. ^ Λ 'Λ / the first insulating film on the lower layer wiring, via the layer wiring: the Λ layer wire is a three-dimensional intersecting plural upper layer wiring, the upper board, i Zhongrengu 2 insulating film, and the resin on the second insulating film The basic part of the array of the film is: = the interlayer short-circuit part between the upper-layer wiring and the lower-layer wiring that is three-dimensionally crossed, and the short-circuit between the layer wiring and the lower-layer wiring is short; In the aforementioned upper-layer wiring, the aforementioned inter-layer short-circuit =, set f, and a pair of contacts that push the inner wall of the resin film into a push-through shape ^ Bypass lines that connect a pair of contact holes to the upper-layer wiring Clamped by a pair of contact holes, and Inter-short: At the position, the disconnected line part t that separates the inter-layer short-circuit part of the upper layer wiring is a bypass line formed by a pair of contact holes. By separating the inter-layer short, I | " Repair the short-circuited wiring. The holes are penetrated from the surface of the resin film to the wiring. Inside the resin film

第9頁 !24〇837Page 9! 24〇837

壁方面，將樹脂膜之部分形成推形成推拔狀，可進行在以往較為成。 ’ 拔狀，使内壁傾斜。由於困難之接觸孔其配線之形，接觸孔方面，前述樹脂膜部分之接觸孔之大小係較述f 2絶緣膜以及上層配線部分之接觸孔之大小更大。則述樹脂膜中，形成前述接觸孔之開口部之部分係馬曲面。包含連結設置於前述樹脂膜之一對接觸孔之溝槽，前迷旁路線係設置於該溝槽内。本發明所述之陣列基板之修補方法，係該基板含有基反基板上複數之配線、配線上之絕緣膜、絕緣膜上之樹脂膜之陣列基板之修補方法；其中含有：檢測前述複數之配線中因斷線而劃分為2之配線之步驟、設置由樹脂膜表面起分別貫穿到前述劃分為2之配線且將樹脂膜内壁形成 $拔狀之對接觸孔之步驟、設置通過前述一對接觸孔與月ίΐ述劃分為2之配線相連接之旁路線之步驟。本發明所述之另一陣列基板之修補方法，該基板含有基板、基板上複數之下層配線、基板與下層配線上之第1 、、、邑緣膜經由弟1絕緣膜與下層配線作立體交又之複數之上層配線、上層配線上之第2絕緣膜、第2絕緣膜上之樹脂膜之陣列基板之修補方法；其中含有：檢測在前述上層配線與下層配線作立體交又之部份中，將上層配線與下層配，力j以紐=之層間短路部之步驟、設置由樹脂膜頂面起貫牙至失持4述上層配線中前述層間短路部之位置為止，且On the wall side, it is possible to push the part of the resin film into a push shape, which can be performed in the past. ‘Pull out to incline the inner wall. Due to the shape of the wiring of the difficult contact hole, the contact hole size of the aforementioned resin film portion is larger than the contact hole size of the f 2 insulating film and the upper wiring portion. In the resin film, the portion forming the opening of the contact hole is a horse-curved surface. The groove includes a pair of contact holes disposed in one of the foregoing resin films, and the bypass line is disposed in the groove. The method for repairing an array substrate according to the present invention is a method for repairing an array substrate in which the substrate includes a plurality of wirings on a base substrate, an insulating film on the wiring, and a resin film on the insulating film; the method includes: detecting the aforementioned plurality of wirings In the step of wiring divided into 2 due to a broken wire, the step of providing a pair of contact holes penetrating from the surface of the resin film to the above-mentioned divided wiring of 2 and forming the inner wall of the resin film to form a pair of contact holes, and setting through the aforementioned pair of contacts The step of connecting the hole to the bypass line which is divided into 2 wirings. Another method for repairing an array substrate according to the present invention, the substrate includes a substrate, a plurality of lower-layer wiring on the substrate, and a first, a, and an edge film on the substrate and the lower-layer wiring are three-dimensionally interlinked with the lower-layer wiring through the 1 insulating film. Another method for repairing an array substrate of a plurality of upper-layer wiring, a second insulating film on the upper-layer wiring, and a resin film on the second insulating film; the method includes: detecting the three-dimensional interaction between the upper-layer wiring and the lower-layer wiring. , The step of matching the upper layer wiring with the lower layer, and the force of the short circuit between the layers is set from the top surface of the resin film to the point where the interlayer short circuit is located in the upper layer wiring, and

第10頁 1240837 五發明說明（6) 將樹脂膜内壁形述一對接觸孔=推拔狀之一對接觸孔之步驟、設置與前層配線中由前述L性連接之旁路線之步驟、設置在前述上之位置處，將上L對接觸孔所夾持，且在前述層間短路部步驟。㈢配線之層間短路部加以分離之斷線部之在岫述樹月旨之部分形成為曲、面’含有在形成前述接觸孔之開口部槽之步驟；前、•、卷之步驟、設置與前述接觸孔相連接之溝在設置接鯧路線係设置於前述曲面與溝槽内。線之步驟係利用+二驟、"又置溝槽之步驟、以及設置旁路 n用雷射加以進行。在設置溝；}^ . 線之步驟中之+ ^驟中之田射之掃描速度較在設置旁路 <每射之掃描速度為快。四、【實施方式】 ~丨、妾下來針對本發明所述之陣列美；斑里攸姑女貫施形態，利用圖 =基板與其修補方法之加以說明。 ΰ 首先針對配線斷線之場合圖1係斷線φ石丨&. 板1。係含有基二=車上^ 號線U上之披覆絕缘；板^^之信號線(配線)16、信之樹脂膜（聚合物j膜（、、、邑、，彖膜）18、以及彼覆絕緣膜18上度為2 到5 δ旒線1 6文到切斷。例如，樹脂膜之厚 A"1到5以111 ’信號線16之厚度為〇 ^ "爪釗八ς 祕覆絕緣膜18之厚度& 2 "m5，丨η广為°·3 "m到°·5，，被又马0,2//m到〇.5//m。雖然並未圖示，在 1240837Page 10 1240837 Fifth invention description (6) Steps and settings for describing the inner wall of the resin film as a pair of contact holes = one pair of push holes, and the steps and settings of the bypass line connected by the aforementioned L in the front layer wiring At the above position, the upper L pair of contact holes are clamped, and the step is performed at the interlayer short-circuit portion.断 The broken part of the wiring which is separated from the short-circuit part of the wiring is formed into a curved part on the part of the description of the tree, and it includes a step of forming a groove in the opening part of the aforementioned contact hole; The grooves connected by the contact holes are arranged in the curved surface and the grooves in the connection route. The steps of the line are performed by using + two steps, " adding a groove step, and setting a bypass n by laser. The scanning speed of the field shot in the + ^ step in the setting step of the} ^ line is faster than that in the bypass setting < the scanning speed of each shot. Fourth, [Embodiment] ~ 、, 妾, for the beauty of the array described in the present invention; Auntie Ban Liyou apply the form, using the picture = substrate and its repair method to explain. ΰ First, when the wiring is broken, Figure 1 shows the broken line φ 丨 &. board 1. It is based on the coating insulation on the second line U on the car ^; the signal line (wiring) 16 on the board ^^; the resin film of the letter (polymer j film (, ,, eup, 彖 film) 18, and other The thickness of the insulating film 18 is 2 to 5 δ, and the line is cut to 16 lines. For example, the thickness of the resin film A " 1 to 5 is 111 ′ and the thickness of the signal line 16 is 〇 ^ " The thickness of the insulating film 18 & 2 " m5, η is widely ° · 3 " m to ° · 5, and the thickness is 0,2 // m to 0.5 // m. Although not shown At 1240837

所定位極線，樹板1 0旋材料加下較厚脂膜20 塵埃。之披覆化。置上，與信號脂膜2 0 轉。藉以硬化，所以表面亦即使在絕緣膜基板1 2 線1 6作係將樹由旋轉形成樹即使有可平坦银刻失 1 8雖然與閘極絕緣立體交又。脂材料塗抹會使樹脂材脂膜2 0。樹異物3 0存在化。異物3 0 誤等造成斷會凹陷但樹膜1 4之間設置有複數條閘基板1 2係使用破璃基板。於彼覆絕緣膜1 8上，使基料平坦化。然後，令樹脂脂膜2 0與信號線1 6比較之 ’在形成樹脂膜2 0時，樹 ’係指C V D塵埃或是光阻線之場合中，斷線部分3 2 脂膜2 0之表面會受到平土曰設置有分別絕緣膜1 8、以及中，在樹脂膜2 0 口部，例如可為較披覆絕緣膜1 8 部分之接觸孔2 2 15 //m 到 30 //m 〇的大小，其直經樹脂膜2 0中曲面24。曲面24 22與溝槽26之邊樹脂膜20上槽26中設置有旁線1 6而設置之旁貫穿因斷線而受到切斷之信樹脂膜20之一對接觸孔2 2。 f分之内壁形成為推拔狀。圓形。在接觸孔22中，樹脂與信號線1 6之部分為大。例的大小，在接觸孔22之開口披覆絕緣膜1 8與信號線1 6之為 3 // m 到 1 〇 # m。，形成接觸孔22之開口部之 ’可以僅是設置旁路線2 8之界會成為曲面24旁路線28便没置有連接接觸孔2 2彼此之路線2 8。在一方之接觸孔2 2 路線2 8 ’係經由溝槽2 6内與號線1 6、披覆在接觸孔2 2 接觸孔22之開膜2 0之部分係如’樹脂膜2 0 部處其直徑為部分接觸孔2 2 部分，係成為部分。接觸孔不易斷線。溝槽2 6，在溝中，連接線號另一方之接觸For the positioned epipolar line, the material of the tree board is 10 mm, and the thicker lipid film 20 is added to the dust. Covering it. Put on, and the signal lipid film turns 2 0. As a result of the hardening, the surface is even on the insulating film substrate 1 2 line 16 and the tree is rotated to form the tree even if it can be flat silver engraved 1 8 although it is three-dimensionally intersected with the gate insulation. Grease material coating will make the resin material fat film 20. Tree foreign matter 30 exists. Foreign matter 3 0 is broken by mistake, etc. It will sag, but there are multiple gates between the membranes 1 and 4. The substrates 1 and 2 are glass substrates. On the other insulating film 18, the substrate is planarized. Then, compare the resin grease film 20 with the signal line 16. In the case where the resin film 20 is formed, the tree refers to the surface of the disconnected portion 3 2 of the grease film 20 in the case of CVD dust or a photoresist line. It will be exposed to flat soil. Insulation film 18 is provided, and at the mouth of the resin film 20, for example, the contact hole 2 2 15 // m to 30 // m 〇 which is a part of the insulation film 18 may be covered. The size is that it passes directly through the curved surface 24 in the resin film 20. The curved surface 24 22 and the edge of the groove 26 are formed on the resin film 20. A side line 16 is provided in the groove 26, and a letter cut by a disconnection is passed through the pair of contact holes 22 of the resin film 20. The f-point inner wall is formed in a push shape. Round. In the contact hole 22, a portion of the resin and the signal line 16 is large. For example, the size of the opening in the contact hole 22, covering the insulating film 18 and the signal line 16 is 3 // m to 1 0 # m. The openings forming the contact holes 22 may be provided only by the boundary of the bypass line 28, which will become a curved surface 24. The bypass line 28 may be provided without a route 28 connecting the contact holes 22 to each other. The contact hole 2 2 route 2 8 'on one side passes through the groove 2 6 and the number line 16 and the part covering the opening film 2 0 of the contact hole 2 2 is the resin film 2 0 Its diameter is a part of the contact hole 2 2 and becomes a part. Contact holes are not easily broken. Trench 2 6 In the trench, connect the line number to the other side of the contact

12408371240837

孔22之信號線16連接。之形狀之方式，能夠透過旁路樹脂膜之陣列基板10之信號線藉由形成上述樹脂膜2 〇線2 8將以往極為困難之呈有 1 6的斷線加以連接。進行信號線1 6之修補置，使用後述之兩種雷射掃描速度。之修補裝置，係為一般所知之裝 ’在各程序中變成雷射之輸出與接明。透線。如序，在為加以連線之信需要較合更高過以高金屬會膜20排分加以著，針過陣列圖 2(a) 斷線部了經由接，如號線1 6 習知之之功率功率使急驟地出之後錐形化對具有斷測試器，所示般，分32處形樹脂膜20 圖2 ( b)所為止地開披覆絕緣 5例如5 用脈衝雷抵達昇華，在接觸、、' 七號線1 6之修補方法加以說信號線1 6之斷，透過後述之輕檢查陣列基板1 〇之發現斷線部分3 2後成旁路線2 8 將切成兩段之信號線16以示般，由樹脂膜20之表面啟接觸孔22。在開啟接觸膜1 8與信線號1 6開啟接觸使用〇· 4mJ到1· 3mJ之脈衝射34之方式，對信號線J 6 溫度之能量，將其排出。孔2 2之内壁方面，將樹脂旁路線2 8 到受到斷孔22時，孔22之場雷射。透施予配線在將樹脂膜2 0之部The signal line 16 of the hole 22 is connected. By means of the shape, the signal lines of the array substrate 10 that can bypass the resin film can be connected by forming the above-mentioned resin film 20 lines 2 8 which are extremely difficult to break. Repair the signal line 16 and use the two laser scanning speeds described below. The repairing device is a commonly known device that becomes a laser output and instructions in each procedure. Transparent. In order, in order to connect the wire, the letter needs to be higher than the high metal film 20 rows. Needle through the array Figure 2 (a) The broken part of the array is connected, as shown by line 16 The power is made to taper to the tester with a broken tester after it emerges suddenly. As shown, the resin film is divided into 32 places. Figure 2 (b) is covered with insulation 5 such as 5 with a pulse of lightning to reach the sublimation. The method of repairing No. 7 line 16 is to say that the signal line 16 is broken. Through the light inspection described later, the array substrate 10 is found to be a broken line 3 2 and then a bypass line 2 8 will be cut into two segments of the signal line. 16, as shown, the contact hole 22 is opened from the surface of the resin film 20. When the contact film 18 is opened and the signal line number 16 is opened, a pulse of 0.4 mJ to 1.3 mJ is used to shoot 34, and the energy of the temperature of the signal line J 6 is discharged. On the inner wall side of the hole 22, when the resin bypass line 2 8 is received by the broken hole 22, the field of the hole 22 is laser. Transparent wiring is applied to the part where the resin film 20 is applied.

如圖2(c)所示般，將CW雷射36之掃描速度設定為高速’设置連結2個接觸孔2 2之溝槽2 6。例如，此時之c界雷射36其輸出為2mW到40mW ’掃描速度為6//m/sec到2〇# m/sec。溝槽26之深度，例如設定為〇· 2 到2〆m，乃是As shown in Fig. 2 (c), the scanning speed of the CW laser 36 is set to a high speed ', and a groove 26 connecting two contact holes 22 is provided. For example, the output of the c-boundary laser 36 at this time is 2mW to 40mW 'and the scanning speed is 6 // m / sec to 20 # m / sec. The depth of the groove 26 is set to, for example, 0.2 to 2〆m, but

第13頁 1240837 五、發明說明（9) 不會受成為斷線原因之異物3 〇之影響的深度僅利用咼功率之脈衝雷射3 4開啟接觸孔2 2，苴接觸 2 士2之開口部會變得銳利。維持如此狀態而形成旁路㈣日了，存在有旁路線28會在開口部受到切斷之危險。在如圖 (c)所不般設置溝槽26時，在接觸孔22之開口部設置曲 24般地令CW雷射36加以掃肖’在形成旁路線28時，旁路線 28不會受到切斷。在形成溝槽26與曲面24 ' (旁：用r料氣體。原料氣體1如可使用 =α〇)6)。在形成溝槽26與曲面24時僅形成極少數旁路線在溝槽26與曲面24的形成上使用原料氣體’在下—個 =序中形成旁路線28時，能夠直接形成旁路線以。如果 $慮溝槽26與曲面24之形成的時間以及旁路線28之形成的日守間的話，可不使用原料氣體形成溝槽26與曲面Μ。在形成接觸孔22之後，進行旁路線28之形成。有樹脂謂之先前技術中，另外設置有接觸點“之程序了以二往之方法形成接觸點48時’會變成需要長時間對雷Γ ΐ在有因雷射之能量會造成樹脂膜20 =度達到熱分解溫度’樹脂膜2〇會熱分解而溶融或基發 $危險。在本發明中係以後述之方法在際Page 13 1240837 V. Description of the invention (9) The depth that will not be affected by the foreign matter that is the cause of the disconnection 3 〇 Only the pulse laser of 咼 power 3 3 is used to open the contact hole 2 2 and 苴 contact 2 is the opening of 2 Will become sharp. When the bypass is maintained in this state, the bypass line 28 may be cut at the opening portion. When the groove 26 is provided as shown in (c) of the figure, the opening of the contact hole 22 is provided with a curve 24 so that the CW laser 36 is scanned. When the bypass line 28 is formed, the bypass line 28 is not cut. Off. A trench 26 and a curved surface 24 ′ are formed (near: a material gas is used. The source gas 1 can be used if αα) 6). Only a small number of bypass lines are formed when the trenches 26 and the curved surfaces 24 are formed. When the source gas is used to form the trenches 26 and the curved surfaces 24, the bypass lines 28 can be formed directly in the next step. If the time between the formation of the groove 26 and the curved surface 24 and the formation of the bypass line 28 are taken into account, the groove 26 and the curved surface M can be formed without using a source gas. After the contact hole 22 is formed, the bypass line 28 is formed. In the prior art with resin, the process of setting a contact point "in addition, when the contact point 48 is formed in a two-way method" will become a long-time lightning strike. 有 Resin film will be caused by the energy of the laser. 20 = If the resin reaches a thermal decomposition temperature of 20 ° C, the resin film 20 will be thermally decomposed and melted or become dangerous. In the present invention, the method described later is in the process of

時形成接觸點48。 π U 如圖2(d)所示般，形成通過2個接觸孔22以及溝槽26 =切斷成2個之信號線16加以連接之旁路線28。利用㈢雷射36 ’以較以往之配線時更低雷射功率，且⑽雷射时 Forming a contact point 48. As shown in FIG. 2 (d), π U forms a bypass line 28 connected through two contact holes 22 and a trench 26 = two signal lines 16 that are cut into two. ㈢Laser 36 ′ is used to lower the laser power compared with the previous wiring, and ⑽Laser

1240837 五、發明說明（10) 速度較形成溝槽26時更慢地進行配線。形成旁路線28石之原料氣體會如以上所述般，例如以使用六羰基鎢之方式，旁路線28係以鎢加以形成。鎢以外，亦可使用鉻或是銦加以开）成。C W雷射3 6之輸出，例如是由1 m w到1 〇 m w，掃描速度為〇· 3 //m/sec到5 //m/sec。由於雷射輸出受到抑制田，所以不存在有樹脂膜20會熱分解而溶融或是蒸發之危險。形成接觸孔22之内部之樹脂膜2 〇之部分係成為^拔狀。接觸孔2 2之深度即使變深，亦能夠將cw雷射％昭接觸孔22之内壁。由此，妒豹尤垃經a 00 “、、射到 7 :,由此，肥夠在接觸孔22之内壁形成旁路 _ 土上形成旁路線28之際，旁路線28會連接於接觸孔22之信號線16，此連接部分會成為接觸f占曰。連接於接接般與= 内壁…㈣相連可形成具充分膜厚之旁二；;亍掃描’ 使r線28不會由溝槽26突出成到會損傷。X，由於会in 形成’樹脂膜20之表面不會突出於樹脂膜限於溝槽26中’旁路線28不之披覆處理之此，液晶顯示器之製造程序問題。際不易產生旁路線28由陣列基板10剝離之如以上所述般透過本發明， ;脂膜20之陣列基板之斷線，能夠1::以往困難之具有率。此夠‘向陣列基板10之良之場合加以說明接著’針對在複數個層間發生短路第15頁 1240837 五、發明說明（11) 如圖3所示般，2條配線1 6、38在進行立體交叉之位置發生短路之場合。將該短路位置定義為層間短路部4 0。陣列基板11中，設置於基板丨2上之閘極線（下層配線） 38係經由閘極絕緣膜（第i絕緣膜）14與信號線（上層配線）1 6作立體交叉。信號線丨6與閘極絕緣膜丨4上設置有彼覆絕緣膜（第2絕緣膜）1 8，披覆絕緣膜丨8上設置有樹脂膜 2 0 ° 經ί補後^陣列基板1 1之構成，係包含有由樹脂膜2 0 之頂面貫穿到信號線丨6中夾持層間短路部4 〇之位置，樹脂膜2 0邛刀之内壁成為推拔狀之一對接觸孔2 2、通過該對接觸孔22與信號線16連接之旁路線28、信號線28中由前述一對接觸孔22所夾持，且在前述層間短路部4〇之位置處，含有將信號線16之層間短路部4〇加以分離之斷線部42。接觸孔2 2之構成，係與經修補斷線後之陣列基板丨〇之接觸孔2 2相同之構成。 ,旁路線，在樹脂膜20之表面係成為〔字型（溝槽型）此乃疋，必須要開孔4 4將斷線部4 2設置於信號線j 6 上。旁路線28係與經修補斷線後之基板1〇同樣地設置於樹脂膜20中之溝槽26内。杜，線部42係透過由樹脂謂之表面貫穿信號線16之通 L 斷、線部42係設置於兩個位置。冑過在夾持 =間^路部40之位置處對開啟通孔44使信號線】6斷線之方 Ϊ 2補：號'Ϊ16與開極線38間之短路，使信號線16與閘和和刀離。被切斷之信號線16會透過旁路線28加以連1240837 V. Description of the invention (10) The wiring is performed more slowly than when the trench 26 is formed. The source gas for forming the bypass line 28 is as described above. For example, by using hexacarbonyl tungsten, the bypass line 28 is formed of tungsten. In addition to tungsten, chromium or indium can also be used. The output of the C W laser 36 is, for example, from 1 mw to 10 mw, and the scanning speed is 0.3. // m / sec to 5 // m / sec. Since the laser output is suppressed, there is no danger that the resin film 20 will be thermally decomposed and melt or evaporate. The portion of the resin film 20 forming the inside of the contact hole 22 is formed in a rectangular shape. Even if the depth of the contact hole 22 becomes deeper, the cw laser% can contact the inner wall of the contact hole 22. Therefore, the jealous leopard yura sutra a 00 ", shot to 7 :, so that when the bypass wall 28 is formed on the inner wall of the contact hole 22, the bypass line 28 will be connected to the contact hole. The signal line 16 of 22, this connection part will become the contact f. It is connected to the connection and is connected to the inner wall ... ㈣ can form a side with sufficient film thickness; 亍 scan 'so that the r line 28 will not go through the groove 26 protrudes to cause damage. X, because the surface of the resin film 20 does not protrude beyond the resin film and is limited to the groove 26, and the bypass line 28 is not covered, the manufacturing process of the liquid crystal display is problematic. It is not easy to cause the bypass line 28 to be peeled off from the array substrate 10 and to pass through the present invention as described above; the break of the array substrate of the lipid film 20 can be 1: the rate of difficulty in the past. This is sufficient for the goodness of the array substrate 10 Illustrate the occasion and then 'for a short circuit between a plurality of layers, page 15 1240837 V. Description of the invention (11) As shown in Fig. 3, two wirings 16 and 38 are short-circuited at the position where the three-dimensional crossing occurs. The short-circuit position is defined as the inter-layer short-circuit portion 40. The array substrate In 11, the gate line (lower-level wiring) 38 provided on the substrate 丨 2 is three-dimensionally intersected with the signal line (upper-level wiring) 16 through the gate insulating film (i-th insulating film) 14. The signal line 丨 6 and the gate The insulating film (the second insulating film) 1 is provided on the electrode insulation film 4 and the resin film 2 0 is disposed on the covered insulating film. The structure of the array substrate 1 1 is supplemented, including the following: The top surface of the resin film 20 penetrates the position of the interlayer short-circuiting portion 4 in the signal line 丨 6, and the inner wall of the resin film 20 trowel becomes a push-shaped pair of contact holes 2 2. Through the pair of contact holes 22 The bypass line 28 connected to the signal line 16 is held by the aforementioned pair of contact holes 22, and the inter-layer short-circuit portion 40 of the signal line 16 is included at the position of the inter-layer short-circuit portion 40. The disconnected disconnection portion 42. The configuration of the contact hole 22 is the same as that of the contact hole 22 of the array substrate after repairing the disconnection. The bypass line is formed on the surface of the resin film 20. (Groove type) It is necessary to open a hole 4 4 and set the disconnection part 4 2 on the signal line j 6. The bypass line 28 is connected with After repairing the broken wire, the substrate 10 is similarly set in the groove 26 in the resin film 20. Du, the wire portion 42 is cut through the opening L of the signal wire 16 through the surface of the resin, and the wire portion 42 is provided in two Position. 胄 The signal line is opened to the through hole 44 at the position of the clamp = between the circuit section 40. 6 The line is broken. 2 Complement: The short circuit between the number 'Ϊ16 and the open pole line 38 makes the signal line. 16 is off the brake and the knife. The cut-off signal line 16 will be connected through the bypass line 28

ΙΗ 第16頁 1240837 五、發明說明（12) ~'-— 形成斷線部42以及接觸孔22之形成位置，盡可At a 土近層間短路部40之附近。 ^ 了此地罪接著，針對配線1 6、38短路之陣列基板之修補方法加以說明。與斷線之場合同樣地利用一般之陣列測試器檢杳7 短路。將發現短路之陣列基板丨丨以後述之方法進行修^了首先，設置接觸孔22。設置接觸孔22之方式，係與在配線1 6為斷線之陣列基板上之設置方式相同。在接觸孔22之開口部設置曲面，更設置溝槽26。在設置曲面與溝槽26之場合中，亦與在配線為斷線之陣列基板上之設置方式相同。設置溝槽26時在樹脂膜20之表面形成匸字狀。在接觸孔2 2上不設置接觸點而形成旁路線2 8，係與修補斷線之方式相同。 ^ ' 然後，設置旁路線2 8。旁路線2 8之設置方式，與在配線1 6為斷線之陣列基板上之設置方式相同。由於溝槽2 6在樹脂膜20之表面形成〔字狀，旁路線28係配合溝槽26形成 C字狀。除了溝槽2 6、旁路線2 8除了形成〔字狀外，溝槽2 6、旁路線28與通孔44只要以不交叉之形式的話可以為任意形狀。在信號線1 6上設置斷線部4 2，使用之雷射為脈衝雷射。例如，將輸出設定為1 · 1 m J，由樹脂膜2 〇之表面貫穿到信號線1 6為止開啟通孔4 4。斷線部4 2係設置在信號線1 6ΙΗ Page 16 1240837 V. Description of the Invention (12) ~ '-— The position where the disconnection portion 42 and the contact hole 22 are formed can be located near the short circuit portion 40 near the interlayer. ^ The crime of this place Next, the repair method of the array substrate with wiring 16 and 38 shorted will be explained. As in the case of a wire break, use a general array tester to check for a 7 short circuit. The array substrate where the short circuit was found is repaired by a method described later. First, the contact hole 22 is provided. The method of providing the contact holes 22 is the same as that of the array substrate on which the wiring 16 is broken. A curved surface is provided at the opening of the contact hole 22, and a groove 26 is further provided. In the case where the curved surface and the groove 26 are provided, it is the same as that on the array substrate where the wiring is broken. When the grooves 26 are provided, a U-shape is formed on the surface of the resin film 20. Bypass lines 2 8 are formed in the contact holes 22 without providing contact points, in the same manner as for repairing broken lines. ^ 'Then, set bypass line 2 8. The setting method of the bypass line 28 is the same as that on the array substrate where the distribution line 16 is broken. Since the grooves 26 are formed in a [character shape] on the surface of the resin film 20, the bypass line 28 is formed in a C shape in cooperation with the grooves 26. Except for the grooves 26 and the bypass lines 28, the grooves 26, the bypass lines 28, and the through holes 44 may have any shape as long as they do not cross. A disconnection portion 42 is provided on the signal line 16 and the laser used is a pulse laser. For example, the output is set to 1.1 m J, and the through-hole 44 is opened from the surface of the resin film 20 to the signal line 16. The disconnection part 4 2 is installed on the signal line 1 6

1240837 五、發明說明（13) Γ位ί。斷線部42之位置係在信號線16中將-對接觸孔22加以夾持且將層間短路部40加以夾持之處。 11之^ ΐ上t程序中，完成產生層間短路部40之陣列基板 2 透過本發明，與斷線之陣列基板之修補同樣錄邱二i仃具有樹脂膜20之陣列基板11之修補。設置斷之二π 1 2通孔44 ’亦可用與披覆絕緣膜18或是樹脂膜20 之相同材料加以填補。 λα 1 Ϊ 7信號線1 6的斷線和信號線1 6與閘極線38間之短路、>(记載之外，其他配線亦可以同樣方法修補。 2 了將樹脂膜20形成為推拔狀之外，只要是能夠將雷 ::身：接觸孔22之内壁之形狀，亦可以是其他形狀。接 .. ’亦可將信號線1 6與披覆絕緣膜1 8形成為推拔狀。 2可將雷射之種類設為單一種類，使用前述之輸出與知描速度。 t上、’，雖然係說明本發明之實施形態，但是本發明並 μ ^定於4述貫施形態。另外，本發明可在未脫離主旨之乾/ 了根據業者之知識能夠以加上各種改良、修正、變更之形態加以實施。【發明之效果】 Ϊ發明來看，透過雷射將接觸孔之内壁形成推拔 ^、叹置溝槽後’藉由形成旁路線之方式，成為能夠修 ^。t在，為困難之具有樹脂膜之陣列基板的斷線或是短月匕夠提南陣列基板之良率。透過在接觸孔之開口部處第18頁 1240837 五、發明說明（14) 設置曲面之方式，在形成旁路線時旁路線不易斷線。1240837 V. Description of the invention (13) Γ Position ί. The position of the disconnection portion 42 is a position in which the-butt contact hole 22 is clamped in the signal line 16 and the interlayer short-circuit portion 40 is clamped. 11 ^ In the above t program, the array substrate 2 generating the interlayer short-circuit portion 40 is completed. According to the present invention, the repair of the array substrate with the disconnected array substrate is recorded. The second repair of the array substrate 11 having the resin film 20 is performed. The second π 1 2 through hole 44 ′ may be provided with the same material as the insulating film 18 or the resin film 20. λα 1 Ϊ 7 disconnection of signal line 16 and short circuit between signal line 16 and gate line 38 > (Except for the description, other wiring can also be repaired in the same way. 2 The resin film 20 is formed as a push In addition to drawing, as long as it can shape the inner wall of the Ray :: body: contact hole 22, it can also be other shapes. Then ... 'The signal line 16 and the covering insulating film 18 can also be formed as a push 2 The type of the laser can be set to a single type, and the output and the scanning speed described above can be used. Although t, and ', are the description of the embodiment of the present invention, the present invention is not set in the fourth embodiment. In addition, the present invention can be implemented in the form of adding various improvements, corrections, and changes according to the knowledge of the industry without departing from the gist. [Effects of the Invention] Ϊ From the perspective of the invention, the contact hole is exposed through a laser. After the inner wall has been pushed out, the groove can be repaired by forming a bypass line, and it is possible to repair the array substrate with the resin film or the short-term moon. Yield. Through the opening of the contact hole Page 18 1240837 Described (14) curved arrangement of the invention, when the bypass line is formed in the bypass line is not easy to break.

Hi 1240837 圖式簡單說明五、【圖式之簡單說明】圖1係本發明所述之經修補之配線之陣列基板之剖面圖。圖2係說明陣列基板之修補方法之示意圖，（a)係說明斷線之示意圖，（b)係開啟接觸孔之剖面圖，（c )係設置曲面與溝槽之剖面圖，（d)係形成旁路線之剖面圖。圖3係本發明所述之經修補之短路配線之陣列基板之剖面斜視圖。Hi 1240837 Brief description of the drawings 5. [Simplified description of the drawings] FIG. 1 is a cross-sectional view of an array substrate for repaired wiring according to the present invention. Figure 2 is a schematic diagram illustrating a method for repairing an array substrate, (a) is a schematic diagram illustrating a broken line, (b) is a cross-sectional view of a contact hole, (c) is a cross-sectional view of a curved surface and a groove, and (d) is a Form a cross-sectional view of the bypass line. FIG. 3 is a cross-sectional perspective view of an array substrate for repaired short-circuit wiring according to the present invention.

圖4係說明未具有樹脂膜之場合之修補方法之示意圖，（a)係說明開啟接觸孔之示意圖，（b )係形成接觸孔之剖面圖，（c )係形成旁路線之剖面圖，（d )係經修補之陣列基板之剖面圖。符號說明 1 0陣列基板 11陣列基板 12基板 1 4 閘極絕緣膜（第1絕緣膜）Fig. 4 is a schematic diagram illustrating a repair method in a case without a resin film, (a) is a schematic diagram illustrating opening a contact hole, (b) is a cross-sectional view of forming a contact hole, (c) is a cross-sectional view of forming a bypass line, ( d) is a sectional view of the repaired array substrate. DESCRIPTION OF SYMBOLS 1 0 Array substrate 11 Array substrate 12 Substrate 1 4 Gate insulating film (first insulating film)

1 6 信號線（配線、上層配線） 1 8彼覆絕緣膜（絕緣膜、第2絕緣膜） 2 0樹脂膜 2 2接觸孔 24 曲面 26溝槽1 6 Signal line (wiring, upper wiring) 1 8 Covered with insulation film (insulation film, second insulation film) 2 0 resin film 2 2 contact hole 24 curved surface 26 groove

第20頁 1240837 圖式簡單說明 2 8 旁路線 30異物 3 2 斷線部分 3 4 脈衝雷射 36 CW雷射 3 8閘極線 4 0 層間短路部 4 2 斷線部 44 通孔 4 6接觸孔 4 8 接觸點 5 0 陣列基板Page 20 1240837 Brief description of the drawing 2 8 Bypass line 30 Foreign object 3 2 Disconnection part 3 4 Pulse laser 36 CW laser 3 8 Gate line 4 0 Interlayer short-circuit part 4 2 Disconnection part 44 Through hole 4 6 Contact hole 4 8 Contact point 5 0 Array substrate

第21頁Page 21

Claims

l24〇837l24〇837

、申睛專利範圍配線+ 一種陣列基板，包含有基板、該基板上的複數之為另勺π亥配線上之絕緣膜、該絕緣膜上之樹脂膜，其特徵匕括： $前述複數之配線中，因斷線而劃分為2之配線；劃分對接觸孔，係由該樹脂膜之表面起分別貫穿前述被形淑：之配線，且將該對接觸孔在樹脂膜之部份之内壁 &為推拔狀；及予以線，經由前述一對接觸孔將前述劃分為2之配線 2·依申請專利範圍第1項之陣列基板，其中：該孔^之接觸孔之大小係較該絕緣膜以及配曰札之大小更大。 J 3. 一種陣列基板，包含有基板、該基板上複數之下曰配線、該基板與該下層配線上之第丨絕緣膜、經絕緣膜與下層配線作立體交又之複數之上層配線、該^ 酉己f上之第2絕緣膜、及該第2絕緣膜上之樹脂膜 ς 為更包含：八竹试層間短路部，係位於該上層配線與下層配線作立體又之部份中，且使該上層配線與該下層配線短路. -對接觸A ’由樹脂膜頂面起貫穿到夾持該上層配線 :该層間妞路部之位置為止’且將該對接觸孔的樹脂膜之邛份的内壁形成為推拔狀；、旁路線，經由該一對接觸孔而與上層配線相連接·，及斷線部，係於該上層配線中由該一對之接觸孔所夾Wiring patent application scope + An array substrate, which includes a substrate, a plurality of insulating films on the substrate and other insulating films on the substrate, and a resin film on the insulating film, which are characterized by: $ aforementioned plural number of wiring In the case, the wiring is divided into 2 due to a broken wire; the pair of contact holes are respectively formed from the surface of the resin film and run through the wiring of the shape-shaped female: and the pair of contact holes are on the inner wall of the resin film & amp Is a push-pull shape; and a wire is used to divide the aforementioned wiring into 2 via the aforementioned pair of contact holes 2 · The array substrate according to item 1 of the patent application scope, wherein: the size of the contact hole of the hole ^ is larger than the insulation The size of the film and the matching is larger. J 3. An array substrate comprising a substrate, a plurality of lower wirings on the substrate, a first insulating film on the substrate and the lower wiring, a plurality of upper wirings that are three-dimensionally interlinked with the lower wiring through the insulating film, the ^ The second insulating film on the substrate f and the resin film on the second insulating film further include: The eight-layer interlayer short-circuit section is located in the three-dimensional part of the upper wiring and the lower wiring, and Short-circuit the upper-layer wiring with the lower-layer wiring.-Pair of contacts A 'from the top surface of the resin film through to hold the upper-layer wiring: to the position of the interlayer girl's portion' and the portion of the resin film of the pair of contact holes The inner wall is formed in a push shape; a bypass line is connected to the upper-layer wiring via the pair of contact holes, and the disconnection portion is clamped by the pair of contact holes in the upper-layer wiring.

第22頁 1240837 ΙΙΙ·ΙΓ^„_ιι··ιι—ι·υ A '中請專繼IS ' ---- 持’且在$亥層間多丑路J0E^夕/打要未，八·3ϊ/ι· 1 r=7 口Ρ之位置處 +離上層配線之層間短略部。 4. 依申請專利範圍第3項之陣列基板，其巾：該樹脂、之部分之接觸孔之大小係較該第2絕緣膜以及上層配線 4分之接觸孔之大小更大。 5. 依申請專利範圍第丨至4項中任一項之陣列基板， =中：於該樹脂膜中，形成該接觸孔之開口部之部分係成為曲面。 6. 依申請專利範圍第1至4項中任一項之陣列基板， ^中.包含連結设置於該樹脂膜之一對接觸孔的溝槽，該旁路線係設置於該溝槽内。 7· 一種陣列基板之修補方法，該陣列基板含有基膜反上LG;的複數之配線、該配線上之絕緣膜、該絕緣該陣列基板之修補方法的特徵為包含：檢測該複數之配線中因斷線而劃分為2之配線驟，設置由該樹脂膜表面起分別貫穿到該劃分為2 將Ϊ脂膜内壁形成為推拔狀之-對接觸孔之步驟；及夕去ΐ工由β —對接觸孔將該劃分為2之配線^以連接之旁路線之步驟。 j Μ遇接抬8兮二種陣列基板之修補方法，該陣列基板包含美 I/基板上的複數之下層配線、該基板與該下層配線上之弟1絕緣膜、經由m絕緣膜與該下層配線作立體交又Page 22 1240837 ΙΙΙ · ΙΓ ^ „_ ιι ·· ιι—ι · υ A 'Please follow IS' ---- Hold 'and be in the $ Hai Duo Ug Road J0E ^ Xi / Da Yao Wei, 8 · 3ϊ / ι · 1 r = 7 Position of port P + short distance between layers of upper wiring. 4. Array substrate according to item 3 of the scope of patent application, the size of the contact hole of the towel and the resin is relatively small The size of the contact hole of the second insulating film and the upper-layer wiring is larger. 5. According to the array substrate according to any one of claims 1-4, the scope of the application is: in the resin film, the contact hole is formed. The part of the opening is a curved surface. 6. The array substrate according to any one of claims 1 to 4 of the scope of patent application, ^. Contains a groove connecting a pair of contact holes provided in the resin film, and the bypass line. It is arranged in the groove. 7. A method for repairing an array substrate, the array substrate comprising a base film on the LG substrate; a plurality of wirings, an insulating film on the wiring, and a method for repairing the array substrate. Including: Detects the wiring steps divided into 2 due to disconnection in the plural wirings, and the setting is determined by the The surface of the lipid membrane runs through the division into 2 steps of forming the inner wall of the lipid membrane into a push-out-pair of contact holes; and the step of removing the work by β—connecting the wiring divided into 2 to the contact hole ^ to connect The step of bypassing the line. J Μ meets two kinds of repair methods of the array substrate, the array substrate includes a plurality of lower-layer wiring on the US I / substrate, an insulation film on the substrate and the lower-layer wiring, and The m insulation film intersects with the underlying wiring.

第23頁 1240837 六申請專利範圍 ___^ 之複數之上層配線、該上層配該第2絕緣膜上之樹脂膜；、、、上之第2絕緣祺該陣列基板之修補方法的檢測在該上層配線與該政為包含：中’該上層配線與該下層配線作立體交又之部份設置由該樹脂膜頂面起層間短路部之步驟； :短路部之位置為纟，且將該樹月旨上層配線中該層一對接觸孔之步驟；、内土形成為推拔狀之設置與該一對接觸孔作電設置在該上層配線中由一之旁路線之步驟；及層間短路部之位置處，將上接觸孔所失持，且在該之斷線部之步驟。㈢_、、含之層間短路部加以分離、9·依申請專利範圍第7或8項之陣列美说♦ 法，其中更包含：】土板之修補方將在該樹脂膜中之形成續接銷為曲面之步驟；及 11觸孔之開口部的部分形成設置連接該一對之接觸孔的溝槽之步驟；該旁路線係設置於該曲面與該溝槽内。 1〇.依申請專利範圍第9項之陣列基板之修補方法，二中.在設置接觸孔之步驟、設置溝槽之步驟、以及設置方路線之步驟係利用雷射加以進行。 11 ·依申請專利範圍第1 0項之陣列基板之修補方法，其中··在設置溝槽之步驟中之雷射之掃描速度較在設置旁路線之步驟中之雷射之掃描速度為快。Page 23 1240837 Multiple upper-layer wirings for the scope of six patent applications ___ ^, the upper layer is matched with the resin film on the second insulating film; the second insulating layer on the upper insulating layer, and the repair method of the array substrate is detected on the upper layer The wiring and the policy include: the step of setting the interlayer short circuit part from the top surface of the resin film to the three-dimensional intersecting part of the upper layer wiring and the lower layer wiring; the position of the short circuit part is 纟, and the tree month The steps of a pair of contact holes of the layer in the upper layer wiring; the step of setting the inner soil to be pushed and the pair of contact holes to be electrically arranged in the upper layer wiring by a bypass line; and the step of the interlayer short circuit At the position, the upper contact hole is lost, and the step is at the disconnection part. ㈢_, the interlayer short-circuited part is included, 9. According to the array beauty method of the 7th or 8th of the patent application scope, which further includes:】 The repairing side of the clay plate will form a continuation pin in the resin film. A step of curved surface; and a step of forming a groove connecting the pair of contact holes in the opening portion of the 11 contact hole; the bypass line is provided in the curved surface and the groove. 10. The method for repairing the array substrate according to item 9 of the scope of the patent application, the second step. The steps of setting the contact holes, the steps of setting the grooves, and the steps of setting the square path are performed by laser. 11 The repair method of the array substrate according to item 10 of the scope of the patent application, wherein the scanning speed of the laser in the step of setting the groove is faster than the scanning speed of the laser in the step of setting the side route.

第24頁Page 24