1240431 五、發明說明α) 【發明所屬之技術領域】 本發明有關於一種發光二極體結構，應用於照明設 備，且特別有關於一種可以雙面發光之發光二極體結構。 【先前技術】 由於發光二極體（Light Emitting Diode; LED)的 發光原理是利用半導體之固有特性，並不同於白熾燈發熱 的發光原理，所以發光二極體被稱為冷光源（c ο 1 d light)。 因為發光二極體具有南财久性、寿命長、輕巧、耗電 量低等優點，而且不含水銀等有害物質，不致污染環境， 因此現今之照明市場對於以發光二極體做為照明之用寄予 極大厚望。 目前市面上所販售之發光二極體多僅具有單面發光的 特性，因而在必需使用到雙面發光之設計時，多是使用兩 個具有單面發光特性之發光二極體來達成，如此一來，勢 必要將兩單面發光之發光二極體設置於相異面，才可達成 目的，因而需要耗費較高之施工成本。 【發明内容】 殷鑑於習知技術之缺失，本發明係提供一種發光二極 體結構，以使得必需使用到雙面發光之設計時，能夠以此 發光二極體結構達成雙面發光的目的。 根據本發明所揭露之發光二極體結構，係包括有發光 二極體晶粒及殼體，發光二極體晶粒具有基板、第一部份 及第二部分，第一部份及第二部份係對稱地分設於基板兩1240431 V. Description of the invention α) [Technical field to which the invention belongs] The present invention relates to a light emitting diode structure, which is applied to lighting equipment, and particularly relates to a light emitting diode structure capable of emitting light on both sides. [Prior technology] Since the light-emitting diode (Light Emitting Diode; LED) uses the inherent characteristics of semiconductors and is different from the light-emitting principle of incandescent lamps, the light-emitting diode is called a cold light source (c ο 1 d light). Because the light-emitting diode has the advantages of long-term performance, long life, light weight, low power consumption, etc., and does not contain harmful substances such as mercury, it will not cause environmental pollution. Therefore, the current lighting market for light-emitting diodes With high hopes. At present, most of the light-emitting diodes sold on the market only have the characteristics of single-sided light emission. Therefore, when it is necessary to use a double-sided light-emitting design, two light-emitting diodes with single-sided light-emitting characteristics are mostly used to achieve this. In this way, it is necessary to set two light-emitting diodes that emit light on one side on different sides to achieve the purpose, and therefore require higher construction costs. [Summary of the Invention] In view of the lack of conventional technology, the present invention provides a light-emitting diode structure, so that when a double-sided light-emitting design is necessary, the light-emitting diode structure can achieve the double-sided light-emitting purpose. The light-emitting diode structure disclosed in the present invention includes a light-emitting diode die and a shell. The light-emitting diode die has a substrate, a first part and a second part, and a first part and a second part. The parts are symmetrically arranged on the substrate
1240431 五、發明說明（3) 部分（first portion)l 2及第二部分（second portion) 1 3 ◦其中第一部份1 2係形成於基板1 1之上表面，第二部分 1 3則形成於基板1 1之下表面，由於第一、第二部分1 2、13 之結構完全一樣，只是形成位置上下顛倒，為避免贅述， 在本實施例中僅以第一部份1 2為例說明之。 如圖1所示，第一部份1 2包括有：一 η型氮化鎵層（n-GaN layer)122、 一 主動層（active layer)123、 一 ρ型氮 化鎵層（p-GaN layer)124、一表面電極（surface electrode)125、一絕緣層（insulating layer)126、一 ρ 極電極（p-electrode)127以及一 η極電極（n-electrode) 1 2 8。其中η型氮化鎵層1 2 2係形成於基板1 1之上表面，主 動層1 2 3形成於η型氮化鎵層1 2 2之部分表面之上方，而ρ型 氮化鎵層1 2 4形成於主動層1 2 3之上方，表面電極1 2 5形成 於Ρ型氮化鎵層1 2 4之上方，ρ極電極1 2 7形成於表面電極 1 2 5之上方，η極電極1 2 8則形成於η型氮化鎵層1 2 4之部份 未被主動層1 2 3覆蓋之表面，並藉由絕緣層1 2 6隔絕ρ極電 極1 2 7及η極電極1 2 8之周圍。 其中絕緣層1 2 6的材質可以是二氧化矽（s丨〇 2 )，而基 板11可以是一藍寶石基板（sapphire substrate)。 而在實際應用時，會將二極體晶粒1 〇封裝在一殼體2 〇中， 形，成如第2圖所示之結構。藉由複數條導線將二極體晶粒 1 0之電極得以連接至外界，如圖2所示，導線1 2丨a之一端 連接P極電極1 2 7 ’導線1 2 1 b之一端連接n極電極1 2 8。 其中殼體2 0之内部具有一適當大小之容置空間，且此1240431 V. Description of the invention (3) The first portion 12 and the second portion 1 3 ◦ The first portion 12 is formed on the upper surface of the substrate 11 and the second portion 13 is formed On the lower surface of the substrate 11, because the structures of the first and second parts 12 and 13 are exactly the same, but the formation position is upside down. To avoid repetition, only the first part 12 is used as an example in this embodiment. Of it. As shown in FIG. 1, the first part 12 includes: an n-GaN layer 122, an active layer 123, and a p-GaN layer layer 124, a surface electrode 125, an insulating layer 126, a p-electrode 127, and an n-electrode 1 2 8. The n-type gallium nitride layer 1 2 2 is formed on the upper surface of the substrate 11, the active layer 1 2 3 is formed over a part of the surface of the n-type gallium nitride layer 1 2 2, and the p-type gallium nitride layer 1 24 is formed over the active layer 1 2 3, the surface electrode 1 2 5 is formed over the P-type gallium nitride layer 1 2 4, the p-electrode 1 2 7 is formed over the surface electrode 1 25, and the n-electrode 1 2 8 is formed on the surface of the n-type GaN layer 1 2 4 that is not covered by the active layer 1 2 3, and the p-electrode 1 2 7 and the n-electrode 1 2 are isolated by the insulating layer 1 2 6 8 around. The material of the insulating layer 1 2 6 may be silicon dioxide (SiO 2), and the substrate 11 may be a sapphire substrate. In actual application, the diode die 10 is packaged in a shell 20 and shaped into a structure as shown in FIG. 2. The electrodes of the diode die 10 can be connected to the outside by a plurality of wires. As shown in FIG. 2, one end of the wire 1 2 丨 a is connected to the P electrode 1 2 7 ′ and one end of the wire 1 2 1 b is connected to n.极 electrode 1 2 8. The inside of the housing 20 has an accommodation space of a proper size, and
1240431 五、發明說明（4) 容置空間内之相對兩端各形成有第一電極2 1及第二電極 2 2，發光二極體晶粒1 0安置於第一、第二電極2 1，2 2之 間，其中第一電極2 1與連接η極電極1 2 8之導線1 2 1 a連接， 而第二電極2 2則與連接p極電極1 2 7之導線1 2 1 b連接，並以 螢光粉3 0填補被第一、第二電極2卜2 2及發光二極體晶粒 1 0所隔開的容置空間，由於此處所使用之基板1 1係為藍寶 石基板，因此可採用黃色的螢光粉3 0，以使得發光二極體 晶粒1 0產生的光激發螢光粉3 0，得以產生白光者。 因此在使用本發明所揭露之發光二極體結構時，位於 殼體2 0内的發光二極體晶粒1 0，皆會朝向殼體2 0相異面發 出光線，且因為所填補之黃色螢光粉，所以本創作除了可 使用於需要雙面發光的狀況外，更可於殼體2 0之雙面皆發 出白色光線。 至於在使用兩種相異顏色之螢光粉分別填補被第一、 第二電極2 1、2 2及發光二極體晶粒1 0所隔開的容置空間 時，位於殼體2 0内之發光二極體晶粒1 0，皆會朝向殼體2 0 相異面發出光線，並因為填補相異顏色之螢光粉3 0之故， 因而本創作可於雙面發出相異顏色的光線。 如「第3圖」所示，本發明所揭露之發光二極體結構 可設置於印刷電路板，以提供雙面發光的功用。 以上所述者，僅為本發明其中的較佳實施例而已，並 非用來限定本發明的實施範圍；即凡依本發明申請專利範 圍所作的均等變化與修飾，皆為本發明專利範圍所涵蓋。1240431 V. Description of the invention (4) The first electrode 21 and the second electrode 22 are formed at opposite ends in the accommodating space, and the light-emitting diode crystal grains 10 are disposed on the first and second electrodes 21, Between 2 and 2, the first electrode 21 is connected to the lead 1 2 1 a connected to the n-electrode 1 2 8, and the second electrode 22 is connected to the lead 1 2 1 b connected to the p-electrode 1 2 7. And the fluorescent powder 30 is used to fill the accommodating space separated by the first and second electrodes 22 and 22 and the light-emitting diode grains 10. Since the substrate 1 1 used here is a sapphire substrate, A yellow phosphor 30 can be used, so that the light generated by the light-emitting diode crystal grains 10 excites the phosphor 30 and can generate white light. Therefore, when the light-emitting diode structure disclosed in the present invention is used, the light-emitting diode grains 10 in the housing 20 will all emit light toward the different surface of the housing 20, and because the filled yellow Fluorescent powder, so this creation can not only be used in situations that require double-sided light emission, but also emit white light on both sides of the housing 20. When two different colors of fluorescent powder are used to fill the accommodating space separated by the first and second electrodes 21, 22, and the light-emitting diode crystal grains 10, respectively, they are located in the housing 20 All the light-emitting diode grains 10 will emit light toward the different surface of the housing 20, and because the fluorescent powder 30 of different colors is filled, this creation can emit different colors on both sides. Light. As shown in "Figure 3", the light-emitting diode structure disclosed in the present invention can be arranged on a printed circuit board to provide the function of double-sided light emission. The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of implementation of the present invention; that is, all equivalent changes and modifications made in accordance with the scope of the patent application for the present invention are covered by the scope of the patent for the present invention .
1240431 圖式簡早說明 第1圖為本發明之發光二極體晶粒的結構剖面圖； 第2圖為本發明之發光二極體晶粒被封裝的結構剖面 圖；及 第3圖為將本發明之發光二極體晶粒置於印刷電路板 之結構剖面圖。 【圖式符號說明】 發光二極體晶粒 10 基板 11 第一部份 12 導線 121a、 121b η型氮化鎵層 122 主動層 123 Ρ型氮化鎵層 124 表面電極 125 絕緣層 126 ρ極電極 127 η極電極 128 第二部分 13 殼體 20 第一電極 21 第二電極 22 螢光粉 301240431 Brief description of the drawings. Fig. 1 is a cross-sectional view of a structure of a light-emitting diode die of the present invention; Fig. 2 is a cross-sectional view of a structure of a light-emitting diode die of the present invention being packaged; The structure sectional view of the light-emitting diode die of the present invention placed on a printed circuit board. [Symbol description] LED diode 10 substrate 11 first part 12 wires 121a, 121b n-type gallium nitride layer 122 active layer 123 p-type gallium nitride layer 124 surface electrode 125 insulating layer 126 ρ electrode 127 η electrode 128 second part 13 case 20 first electrode 21 second electrode 22 phosphor 30