1238463 七 、指定代表圖： (一） 本案指定代表圖為：第（5 )圖。 (二) 本代表圖之元件符號簡單說明·· 202 204進水管 =進水管 208進水及排水管 210溢流板 212溢流口 5〇2清洗液面 溢流方向 八 、本案若有化學式時，請揭綠錢*發日轉_化學式： 九、發明說明： 【發明所屬之技術領域】 焊之半導體製麟備，制是有關晶_洗及乾 =====爾蝴常數之嫩速爾準 【先前技術】 先刖技術有開放式(open type)之清洗及乾燥裝 r開放式清洗及賴裝置⑽之羞圖 ^先槽102 了儲滿純水浸入晶uj，清洗時純水自水管1〇4及⑽ 二水官之排放孔105流入槽中’以清洗晶圓，待水滿 ^日：自溢&板110上之溢流口⑴流出槽外排放至排放收集槽(未 ，不）再從排放管（未㈣)排至廢水處理設備或㈣舰再循環 ^用:但此種先前技術之裝置之純水流入之量不足，而形成死角， 對晶圓之清洗效果不佳，且不均自。碰流D 112未能將微粒及 化學品快速排出，影響清洗速度。若欲增加進水量，則溢流水排 放不及，溢流水位不平均，使微粒及化學品之排出更加不易控制； 因水自水面下之溢流口流出，微粒仍在上層水面之故。排水時若 1238463 且設備增多，若自動由水管排放則流速 ^；，極ί位ϊ =流速亦慢慢降低，影響排液速度。因 時仍能快速溢流而不使微粒逗留且在進水董增大 協助ΐί 擾流進水管’使進水之衝力形成擾流而 【發明内容】 本發明之目的在提供—種晶圓清洗及乾縣置，湘傾 溢& 口，使微粒及化學品能更 快速溢細不使歸糖不3 水的切，仍能 汽式之I 供—種晶®清洗及賴裝置，利用擾 抓式進水& ’使進水之衝力形成擾流以協助清洗。 提供一種晶圓清洗及乾燥裝置，利用程 式攸制進水賴崎鱗得以㈣，使水流賊而有助清洗。 旦批之另二目、的在提供一種晶圓清洗及乾燥裝置，利用流 ”(asPirat〇r)控制排水速度，於乾燥時使液科穩 以增加&洗液之排水平穩性而朝乾燥及排除污染之功效。 焊之目的’本發明提出-種晶圓清洗及乾 二=:===分’至少*包含:-清洗 月ΐ1上端之開口上，該溢流板向外傾斜一角度； 本I面Γ^〖7 ^ U $之清洗液及污染物微粒及浮於清 洗槽中以成水柱，其中-部分係水平設置，另垂直 ϊί=，二垂if進水口亦為排水口，排水口在清洗槽内 改有排水小孔K數個流餘制器，連接至進水σ，崎 制流量，使進水量受控制_整進水壓力，形織流，其流場^ 1238463 而保持一定流 j控制，而協助晶圓之清洗；排水時排水量受控 量，能平穩地排水，使溶劑穩定地取代清洗液。二 【實施方式】 / / 他本谷可祕T述較佳實施_其相_示之闡述而 ^不。本發明並不對整個清洗及乾燥系統作描述，僅就呈中之 >月洗乾賴似·。在各财，_之元件明—彳^表示。 图2隱本發輸佳#_之清洗及乾縣置膽之透視 圖。才曰體202係以财酸驗及溶劑之材料製成，如pFA #。与)狀 Z為方形、圓形等，以配合晶圓及卡g之大小形狀。於—實^， «體202之上部有向外傾斜之溢流板21〇，其傾斜角度視流速之大 小而異，流速愈大，傾斜亦愈大，以增加溢流量。溢流板21〇設 ，流口 212，一般為三角形，但亦可為圓形或梯形、方形等形狀°。 第j圖（先前技術)係溢流板110與槽體一樣直立時之溢流面積之 示意圖。設清洗液液面302距溢流口底端之高度為h ,溢流口 112 之張角為Φ，則溢流面積ABC為： 面積 ABC = (1/2) a h * 2 =h2 tan(0/2) ⑴ 芩考第2、4圖，第4圖係溢流板向外傾斜時溢流面積之示意 圖。設溢流板向外傾斜而與水平面成一角度0，設清洗液面 距離溢流口底端高度為h，溢流口 212之張角為φ，則邊長0為 c = h / sin0 (2) 傾斜面積ABC為 傾斜面積 ABC =(h/sin0 )sin(O/2)(h/sin0 ) cos(0/2) =(h2/sin2 ^ )sin(0/2)cos(0/2) (3) 1238463 故傾斜面積大於未傾斜面積。亦即在液面未增加截面周長之 情形下，溢流之面積增加，使排流速度增加而能將表面之污^物 及化學品溢出清洗槽，使清洗效果增加，污染降低。 於另一實施例，請參考第2圖，槽體202之底部設有三個進 水管204、206、進水及排水管208，進水管204及206自左右兩 邊引進清洗液，例如純水(D· I· water)。使水流向中央部份喷出形 成擾流。此二個進水管皆連接至流量控制器（未圖示），可程式才^ 制其流量，進水及排水管208則設於底部之中央，使水流向上喷 出。經層流板214調節而形成向上之層流。在排水時僅^進水及 排水管208負責排水，因該管在槽體内之部份有小孔可排出底部 之水’而進水及排水管208連接到一個流量控制器，排水時可程 式控制其排水流量。此法與先前技術以控制一個閥之開口大小來 控制流量為佳，因若以閥控制，流速將正比於液面高度，在低液 位時流量很小，液位高時流速又太大。另一先前技術係以質流控 制(mass flow meter)，但能控制之範圍太小，亦難合實用。、由進 水管204，206及進水及排水管208以一定流量供水，則流場之控 制甚為精確，可調整壓力以形成不同之流場，例如左邊之排水| 206加大流量，則左側之水壓增加，反之右側之水壓增加，皆可由 私式4工制。例如用於先清洗一邊，再清洗另一邊。或清洗較辦的 一邊。又排水時因流速一定，不因水位之高低而異，故乾燥時可 確保溶劑/溶液，例如異丙醇（IPA)能穩定地、連續地取代晶圓表 面之水份後，揮發而達乾燥之目的，亦不致因液面下降速度不同 而產生污染增加。又因流速一定，槽内之負壓亦一定，不致因流 速改變而改變負壓，產生污染。且流速控制精準而又連續，較泵 補價廉、穩定。但進水及排水管不限三個，亦可視清洗糟之大小 而增加，例如4個、5個、6個等。 第5圖係依據本發明之一較佳實施例清洗時水流之示意圖。 清洗液自左右兩個進水管204,206以一定流速進入槽内，互相沖 激產生擾流，進水管208將清洗液向上喷出，經層流板214調節 1238463 向以保持平穩之液面，但液面下侧有擾流以協 二洗，^頭504之方向向下溢流，由溢流槽(未圖示）收集後排 放二或經處理，再循環彻。*於進水受程式化控制，因之流量 9ΐϋϋ平知’有助污染物之排出，且溢流口 212已因溢流板 210傾斜而加大，可保持液面高度不致因改變流量而上 污染物之排除，使清洗更為確實有效。 第6圖係依據本發明之一實施例之晶圓乾燥裝置使用時之剖 面圖。首先，晶圓盒602内之晶圓604於清洗完畢後，即停止自 進水I 204, 206流入，改為自進水及排水管2〇8排水，因進水及 ，水管208係連接至流量控制器，受程式控制而保持一定流量， 能平穩地排水。水平面_亦隨同下降，直至水平面離開晶 圓 604 〇 第7圖為依據本發明之一實施例之流量控制器（aspirat〇r)安 ίίΓΐ，之進水及排水管之連接方式之剖面圖。純水或氮氣⑽ 仏應自 置控制器702之進口 706流入，經流量控制器接受程式 控制流量後注人，如箭頭所示，雜式控獅水之流量，清 洗，202中之純水即經由排水管2〇8自排出口 ？〇4排至排液口， =前頭710所示。此時因排流量受到程式控制，因此排水量為一 定，清洗液面606之下降平穩連續，為本發明之一大優點。# 雖然本發明以特定之實施例已予揭露，熟知此技藝之人士將 瞭解可對此特定實施例之形式及細節稍作改變，在不脫離本發明 之精神及理念所作之修飾及變更皆為本發明之範圍，本發明二上 所，述之實施例僅作例示之目的，而不是用以限定所附之申請專 利範圍。 【圖式簡單說明】 、第1圖（先前技術)係先前技術之開放式清洗及乾燥裝置之透 視圖。 1238463 第2圖係本發明較佳實施例之清洗及乾燥裝置之透視圖。 衣意^。3 ®(先術)係溢流板與—樣直立時之溢流面積之 第4圖係溢流板向外傾斜時溢流面積之示意圖。 第5圖係依據本發明之—較佳實補清洗時水流之示意圖。 ㈣第6 _依據本發狀—實補之晶職置使用時之剖 第7圖為依據本發明之一實施 ·丄、— 裝於清洗狀排、脉f切接安 【主要元件符號說明】 i〇〇先前技術之開放式清洗及乾燥裝置 104水管 106水管 112溢流口 102清洗槽 105排放孔 no溢流板 200本發明之清洗及乾燥裝置 202槽體 206進水管 210溢流板 214層流板 502清洗液面 602晶圓盒 608清洗液面 204進水管 208進水及排水管 212溢流口 302清洗液面 504溢流 604晶圓 β1〇小孔1238463 VII. Designated Representative Map: (1) The designated representative map in this case is: (5). (II) Simple description of the component symbols in this representative diagram 202 204 water inlet pipe = water inlet pipe 208 water inlet and drain pipe 210 overflow plate 212 overflow port 502 cleaning liquid surface overflow direction 8. If there is a chemical formula in this case , Please disclose the green money * hair date transfer _ chemical formula: IX. Description of the invention: [Technical field to which the invention belongs] Welding semiconductor manufacturing equipment, the system is related to crystal_washing and drying ===== the constant speed of the butterfly constant Erzun [Previous Technology] The advanced technology has open type cleaning and drying equipment. Open cleaning and reliance device ^ The first tank 102 is filled with pure water and immersed in the crystal uj. Pure water comes from the water pipe during cleaning 1 〇4 and ⑽ The drain hole 105 of Ershuiguan flows into the tank to clean the wafer and wait until the water is full: the overflow port on the overflow & plate 110 is discharged out of the tank and discharged to the drain collection tank (not, not ) And then discharged from the discharge pipe (not yet) to the waste water treatment equipment or barge recycling: but the amount of pure water inflow of this prior art device is insufficient, forming a blind spot, and the wafer cleaning effect is not good, And uneven. Impinging flow D 112 fails to expel particles and chemicals quickly, affecting the cleaning speed. If you want to increase the amount of water inflow, the overflow water will not be discharged well, and the overflow water level will be uneven, making the discharge of particles and chemicals more difficult to control. Because the water flows out of the overflow port below the water surface, the particles are still on the upper surface. If the drainage is 1238463 and the equipment is increased, if the water is automatically discharged from the water pipe, the flow rate is ^ ;, the pole position is also slowly decreased, which affects the drainage speed. Because it can still overflow quickly without causing particles to stay and increase in the water inlet to assist the turbulent water inlet pipe to make the impulse of the water into a turbulent flow [Abstract] The object of the present invention is to provide a kind of wafer cleaning And dry county home, Xiang overflow & mouth, so that particles and chemicals can be spilled more quickly without cutting back to sugar and water, and can still be supplied by steam type I-seed crystal ® cleaning and reliance device, using disturbance Grab water inlet & 'Spoil the water impulse to assist cleaning. A wafer cleaning and drying device is provided, which utilizes a process to suppress the inflow of water and the scales of Lai Qi, so that water can be used to facilitate cleaning. Once the other two batches are approved, a wafer cleaning and drying device is provided. The flow rate (asPirat〇r) is used to control the drainage speed. When drying, the liquid section is stabilized to increase the drainage smoothness of the & The purpose of the soldering method is as follows: the present invention proposes-a kind of wafer cleaning and drying ===== minutes' at least * includes:-cleaning on the opening at the upper end of the moon 1, the overflow plate is inclined outward at an angle ; The cleaning liquid and pollutant particles of Γ ^ 〖7 ^ U $ on the I side float in the cleaning tank to form a water column, of which-part is horizontally installed, and the other vertical ϊ =, the two vertical if water inlet is also a drainage outlet, The drainage opening has several drainage holes K in the washing tank, which are connected to the inlet water σ, and the flow rate is controlled so that the inlet water volume is controlled _ the entire inlet water pressure is shaped, and the flow field is ^ 1238463 and Maintain a certain flow of j control, and assist in the cleaning of wafers; the drainage volume is controlled during drainage, and can be smoothly discharged, so that the solvent stably replaces the cleaning liquid. [Embodiment] // / / / This Motoya Secret T describes a better implementation _ Its phase is illustrated but not. The present invention does not describe the entire cleaning and drying system. Only in the middle of the month > monthly washing dry Lai like. In each of the wealth, the components of _ are shown-彳 ^. Figure 2 Hidden perspective of the washing and Qianxian biliary perspective. Only said The body 202 is made of acid and solvent materials, such as pFA #. And) The shape Z is square, round, etc., to match the size and shape of the wafer and card g. Yu-Shi ^, «The upper part of the body 202 There is an overflow plate 21o inclined outward, and its inclination angle varies according to the magnitude of the flow velocity. The larger the flow velocity, the greater the slope, in order to increase the overflow. The overflow plate 21 is provided, and the orifice 212 is generally triangular. However, it can also be circular or trapezoidal, square, etc. Figure j (prior art) is a schematic diagram of the overflow area when the overflow plate 110 is upright like the tank body. The cleaning liquid level 302 is set from the bottom of the overflow port. The height at the end is h, and the opening angle of the overflow port 112 is Φ, then the overflow area ABC is: area ABC = (1/2) ah * 2 = h2 tan (0/2) 芩 Consider Figures 2 and 4, Figure 4 is a schematic diagram of the overflow area when the overflow plate is inclined outward. Let the overflow plate be inclined outward to make an angle 0 with the horizontal plane, and the height of the cleaning liquid surface from the bottom of the overflow port is h, and the overflow port 2 The opening angle of 12 is φ, then the side length 0 is c = h / sin0 (2) The inclined area ABC is the inclined area ABC = (h / sin0) sin (O / 2) (h / sin0) cos (0/2) = (h2 / sin2 ^) sin (0/2) cos (0/2) (3) 1238463 Therefore, the sloped area is larger than the non-sloped area. That is, without increasing the cross-section perimeter of the liquid surface, the area of the overflow increases, causing the drainage Increasing the flow speed can spill the dirt and chemicals on the surface out of the cleaning tank, which will increase the cleaning effect and reduce the pollution. In another embodiment, please refer to FIG. 2. The bottom of the tank 202 is provided with three water inlet pipes 204, 206. Water inlet and drainage pipes 208. The water inlet pipes 204 and 206 introduce cleaning liquids from the left and right sides, such as pure water (D · I · water). The water is spouted toward the central part to form a turbulent flow. These two inlet pipes are connected to a flow controller (not shown), and the flow rate can be controlled by a program. The inlet and drain pipes 208 are set in the center of the bottom to make the water flow upward. Adjusted by the laminar flow plate 214 to form an upward laminar flow. During drainage, only the water inlet and drainage pipe 208 is responsible for drainage. Because the pipe has a small hole in the tank body to drain the water at the bottom, the water inlet and drainage pipe 208 is connected to a flow controller. The program controls its drainage flow. This method is better than the prior art in controlling the flow rate by controlling the opening size of a valve, because if the valve is used to control the flow rate, the flow rate will be proportional to the liquid level, the flow rate will be small when the liquid level is low, and the flow rate will be too high when the liquid level is high. Another previous technology is mass flow meter, but the controllable range is too small to be practical. Water is supplied by the water inlet pipes 204 and 206 and the water inlet and drainage pipe 208 at a certain flow rate. The flow field control is very precise. The pressure can be adjusted to form different flow fields. For example, the drainage on the left | 206 increases the flow, then the left When the water pressure is increased, the water pressure on the right side is increased. For example, it is used to clean one side first and then the other side. Or wash the side. Also, because the flow rate is constant during drainage, it does not vary with the level of the water level, so the solvent / solution, such as isopropyl alcohol (IPA), can be used to stably and continuously replace the water on the wafer surface during drying, and then dry. The purpose is not to cause pollution increase due to different speed of liquid level descent. Because the flow velocity is constant, the negative pressure in the tank is also constant, so that the negative pressure will not be changed due to the change of the flow velocity, which will cause pollution. And the flow rate control is accurate and continuous, which is cheaper and more stable than the pump. However, the number of water inlet and drainage pipes is not limited to three, and it can be increased according to the size of the cleaning tank, such as four, five, and six. FIG. 5 is a schematic diagram of water flow during cleaning according to a preferred embodiment of the present invention. The cleaning liquid enters the tank at a certain flow rate from the two left and right inlet pipes 204 and 206, which impinge on each other to generate turbulence. The inlet pipe 208 ejects the cleaning liquid upward and adjusts the 1238463 direction through the laminar flow plate 214 to maintain a stable liquid level. There is a turbulence on the lower side to wash in the second, and the head 504 overflows downward. It is collected by an overflow tank (not shown) and then discharged or treated, and recycled thoroughly. * The inflow water is controlled by program, because the flow rate is 9%, it is known that it will help the discharge of pollutants, and the overflow port 212 has been enlarged due to the tilt of the overflow plate 210, which can keep the liquid level from rising due to changing the flow rate. The removal of pollutants makes cleaning more effective. Fig. 6 is a sectional view of a wafer drying apparatus according to an embodiment of the present invention when it is used. First, after the wafer 604 in the wafer box 602 is cleaned, the inflow of self-intake water I 204, 206 is stopped, and the water is discharged from the inflow and drainage pipe 208. Because of the inflow of water, the water pipe 208 is connected to The flow controller is controlled by the program to maintain a certain flow and can discharge water smoothly. The horizontal plane_ also descends until the horizontal plane leaves the crystal circle 604 〇 FIG. 7 is a sectional view of the connection mode of the water inlet and drain pipes of the flow controller (aspirat〇r) according to an embodiment of the present invention. Pure water or nitrogen ⑽ should flow in from the inlet 706 of the controller 702, and be injected after the flow controller accepts the program-controlled flow. As shown by the arrow, the hybrid lion water flow is controlled and cleaned. The pure water in 202 is From the drain through the drain pipe 2008? 〇4 drained to the drain port, as shown in front 710. At this time, because the discharge volume is controlled by the program, the drainage volume is constant, and the decline of the cleaning liquid level 606 is smooth and continuous, which is one of the great advantages of the present invention. # Although the present invention has been disclosed in specific embodiments, those skilled in the art will understand that the form and details of this specific embodiment may be slightly changed, and modifications and changes made without departing from the spirit and concept of the present invention are The scope of the present invention, as described in the second aspect of the present invention, is for illustrative purposes only, and is not intended to limit the scope of the attached patent application. [Brief description of the drawings] Figure 1 (prior art) is a perspective view of an open cleaning and drying device of the prior art. 1238463 Figure 2 is a perspective view of a cleaning and drying device according to a preferred embodiment of the present invention. Yiyi ^. 3 ® (Surgery) is an overflow plate and the overflow area when the sample is upright. Figure 4 is a schematic diagram of the overflow area when the overflow plate is inclined outward. FIG. 5 is a schematic diagram of water flow during cleaning according to the present invention. ㈣ 第 6 _According to this hair condition—the cut-out when using the supplementary crystal position. Figure 7 is implemented according to one of the present invention. 〇〇The prior art open cleaning and drying device 104 water pipe 106 water pipe 112 overflow port 102 cleaning tank 105 discharge hole no overflow plate 200 cleaning and drying device 202 tank 206 inlet pipe 210 overflow plate 214 layer of the present invention Flow plate 502 cleaning liquid level 602 wafer box 608 cleaning liquid level 204 inlet pipe 208 water inlet and drain pipe 212 overflow port 302 cleaning liquid level 504 overflow 604 wafer β10 small hole