TWI235631B

TWI235631B - Surface insulation method for multi-layered chip-type ceramic over-voltage suppressor device

Info

Publication number: TWI235631B
Application number: TW92132805A
Authority: TW
Inventors: Ching-Lung Tzeng; Sheng-Ming Deng
Original assignee: Lien Shun Technical Co Ltd; Sheng-Ming Deng
Priority date: 2003-11-21
Filing date: 2003-11-21
Publication date: 2005-07-01
Also published as: TW200408333A

Abstract

lectrode have excellent soldering characteristic. In addition, the main-body surface is prevented from being plated with metal to cause product malfunction due to short-circuit. Furthermore, when performing insulation coating onto the ceramic main-body before the manufacturing of terminal electrode, it is possible to have no electrical conduction between the terminal electrode manufactured in the following process, and the internal electrode for the terminal portion of the originally exposed internal electrode due to the block of the surface insulation layer. The present invention adopts dipping and etching method and thermal processing method to extend the internal electrode terminal portion outward, so as to assure the formation of excellent electric conduction between the internal electrode and the terminal electrode.

Description

1235631 五、發明說明（1) 【發明所屬之技術領域】本發明係關於一種多層式晶片型件，特別是關於該元件表面光過電壓抑制益元電極可庳用# # s g _ / ，使得該元件之端」應用得統日日片型元件雷鍍掣層焊接介面層，使端電極的：端電極鍍上- 免陶瓷本體表面鍍上全屬m谇接特性’同時可避至屬，而造成產品短路失效。【先前技術】近：來，隨著電子產品小熟、多求下，電子線路之製作』搞式之而上需符人爭-二招：功能提升’電子元件不僅性能㉟格要* ’其與積體電路配合之高可靠性基本需求。因此，本質上屬於保護 :壓抑制器，，更大的單位體積突波吸收能力力適用電藶的方向發I，是必然的結果，另因電磁二乏之 jMj)及電磁相容性（EMC)之需求不，多層陶瓷過電壓抑制裔逐，被大量運用於電腦資訊與通訊產品之電子電路上，另在，傳輸速度、高頻寬、高組裝密度需求、以及符合防制規範下，使得陶瓷過電壓抑制器不僅在材料研發方面更上一層，而可與表面實裝（SMT)線路搭配之各式規格的晶片化等技術更促使陶瓷過電壓抑制器產業發展，尤其是多層陶究製程使晶片型陶瓷過電壓抑制器之設計及製作有更寬廣的發展，如多層陶瓷製程中的電極共燒就涉及陶曼過電壓抑制器之配方調整以降低燒結溫度、陶瓷過電壓抑制1235631 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a multi-layer wafer type, in particular, to the surface over-voltage suppression benefit element electrode of the element can use # # sg _ / to make the element "The end" is applied to the soldering interface layer of the Japanese and Japanese chip components. The terminal electrode is plated-the end surface of the ceramic body is completely coated. It is all m-connection characteristics. At the same time, it can be avoided. Product short-circuit failure. [Previous technology] Recently: As electronic products become more mature and more demanding, the production of electronic circuits needs to compete with others-two tricks: functional enhancements. Basic requirements for high reliability with integrated circuits. Therefore, it is essentially a protection: pressure suppressor, a larger unit volume surge absorption capacity is applied in the direction of electric shock, is an inevitable result, and due to the lack of electromagnetic jMj) and electromagnetic compatibility (EMC Multi-layer ceramic over-voltage suppression is not widely used in electronic circuits of computer information and communication products. In addition, the transmission speed, high frequency bandwidth, high assembly density requirements, and compliance with regulations prevent ceramics from passing. The voltage suppressor is not only one step higher in the development of materials, but also various technologies such as chip forming that can be used with surface-mounted (SMT) circuits have promoted the development of the ceramic overvoltage suppressor industry, especially the multi-layer ceramic manufacturing process. The design and production of ceramic overvoltage suppressors have developed more widely. For example, the co-firing of electrodes in the multilayer ceramic manufacturing process involves the adjustment of the formulation of the Taumann overvoltage suppressor to reduce the sintering temperature and ceramic overvoltage suppression.

1235631 五、發明說明（2) ::部份成分會與共燒之電極反應、以及調整組成後特性的穩定性等均是極重要的課題。 - w =U、1BA1C圖所示之習知多層式晶片型陶瓷過電堡抑制器，材料經陶曼生胚薄片製作、印刷堆疊、二電燒結及端電極製作後’即形成包括：冑竟本體】 “ 之結構，f用以半導體性或低絕緣性材料為層陶竞過電壓抑制器及其他晶片型電子元件的= 法2採用Ag、Ag-pd4Ag_pd_pt為端銀電極，電子π件之端電極與系統電路機板易於焊接揍合，/使该電子兀件應有之功能，大部分之電么揮作完成後，f以電鑛製程鍍上一層焊電極製曰丨取丄滑杆接介面層，使端雷枚 ΐ導接=制然而，多層陶究過電壓抑制器為二丰導體！生材枓，電鍍製程中會將電鍍之金屬Μ、pb —S Sn鑛：陶兗本體上，使得該元件之或品短路失效。 ^ < 守软產傳統上解決上述問題的方法是使用含有貴重金屬，極材料，使端電極無須電鍍即具有可銲錫焊接的 =此種端電極之焊接性與可靠度仍然很難達㈣電^捏接；I面層金屬相同的焊接品質與水準。 /、 Ά 此外，另有下列二種較重要之習用絕緣方法 =極可電鑛’且不會將電鍍之金屬鑛在陶兗本體上達士將作法及問題點分述如下：紙 ^歐^專利第釀m號之方法係將多層陶曼電子泡於構酸鹽水溶液中，以本體之主成份氧化鋅被酸^容1235631 V. Description of the invention (2) :: Some components will react with the co-fired electrode, and the stability of the characteristics after adjusting the composition is an extremely important issue. -w = U, 1BA1C The conventional multilayer wafer-type ceramic over-electricity suppressor shown in the figure is made of Taoman green sheet, printed stacking, second electric sintering, and terminal electrode. "Structure, f using semiconductor or low-insulation material as a layer ceramic overvoltage suppressor and other chip-type electronic components = Method 2 uses Ag, Ag-pd4Ag_pd_pt as the terminal silver electrode, the terminal electrode of the electronic π part and The system circuit board is easy to be welded and combined, so that the electronic element should have the functions. After most of the electric wave is finished, f is plated with a welding electrode in the electro-mineral process. However, the multi-layer ceramic overvoltage suppressor is a Niyoto conductor! Raw materials: In the electroplating process, the electroplated metal M, pb —S Sn ore: On the ceramic body, make The short circuit of the component failed. ^ &S; Traditionally, the method to solve the above problems is to use precious metals and electrode materials, so that the terminal electrode does not need to be plated to have solderability. = The solderability of this type of terminal electrode and Reliability is still difficult ㈣Electric ^ pinch; I surface layer metal with the same welding quality and level. /, Ά In addition, there are two more important conventional insulation methods = extremely electric ore 'and will not be electroplated metal ore in ceramic 兖Dashi's practice and problems on the body are described as follows: The method of paper ^ Euro ^ Patent No. m is to soak multi-layer Taoman electrons in an aqueous solution of acid salt, and the main component of the body is zinc oxide to be acidified.

1235631 五、發明說明（3) 液溶解後，上，形成絕反應物濃度亦造成製造 2·中華民國端電極形成製作之絕緣覆，而降低除電子元件用也將限制須低於絕緣 3 ·美國專利成後，製作接著再包覆二次之端電銀電極製作雜性不利於基於前所欲解決之與溶液反應生成磷酸鋅沉私# 緣之表面被覆，然此陶竟本體㈣、溫度及pH值等條件，且使用〜控：，谷液的成本提高及環保問題。後的廢溶液處理專利第447775號之方法#於跑— 前，於陶究本體上被ί 是本體形成後，層可能造成原先外露的内‘極、！層’然此方法電子元件之效能與可電；端部被絕緣層包兩端部絕緣層的程序，^卜3义須增加一道清層材料可承受的溫度=電極之燒附溫度必第6232867號之方法係於夕庶第一&層陶竞電子元件形第二-層玻璃絕緣層，製造成本控制。處理私序’材料與製程之複述問題及習知方法辦六士問題所在。 +在之缺失，正是本發明【發明内容] 陶瓷電子元件之端電極製作層焊接介面層，使端電極具《所欲解決之技術問題》 — 本發明主要在於解決多層 70成後’需以電鍍製程鍍上—1235631 V. Description of the invention (3) After the liquid is dissolved, the concentration of the reactant is also formed. 2 · The Republic of China terminal electrode is formed to produce the insulation cover. The reduction of the use of electronic components will also limit the insulation. 3 · United States After the patent is completed, the production and then coating of the secondary electric silver electrode is not conducive to the production of zinc phosphate based on the surface of the zinc coating. The pH value and other conditions, and the use of ~ :: increase the cost of cereal fluid and environmental issues. The method of treating the waste solution after the patent # 447775 # Before running — on the Tao body, after the body is formed, the layer may cause the inner exposed pole, which was originally exposed! The efficiency and electrical performance of the electronic components in this method; the end is covered by the insulation layer at both ends of the insulation layer procedure, ^ 3 meaning must be added a layer of clearing material can withstand the temperature = electrode burning temperature must be 6232867 The method is based on the first & ceramic electronic component-shaped second-layer glass insulation layer of Xixun, and the manufacturing cost is controlled. Dealing with the problem of retelling of private sequence ’materials and processes and how to know how to do it. + What is missing is the present invention. [Content of the invention] The soldering interface layer of the terminal electrode production layer of the ceramic electronic component, so that the terminal electrode has the "technical problem to be solved" — the present invention is mainly to solve the 70% of multilayers. Plating process plating—

12356311235631

有良好的焊接特性性材料，電鍍製程陶瓷本體上，使得效的問題。 ’然而，多層陶瓷電中會將電鍍之金屬Ni 元件之兩端電極導通子元件為一半導體 ' Pb-Sn或Sn鑛在 ’導致產品短路失《解決問題之技術手段》 > ，發明之技術手段主要是以玻璃、有機化合物、金屬 ^勿金類或其他高絕緣性材料塗佈於多層陶瓷過二j抑制器本體表面上，經熱處理後，於陶瓷本體表面形 =一絕緣層，使得元件之端電極可應用傳統晶片型元件之Materials with good soldering properties, plating process on the ceramic body, make it problematic. 'However, in multilayer ceramics, the electrodes at both ends of the electroplated metallic Ni element will be connected to a semiconductor,' Pb-Sn or Sn ore ', which will cause the short circuit of the product. "Technical means to solve the problem" > The method is mainly coated on the surface of the multilayer ceramic suppressor body with glass, organic compounds, metals, or other highly insulating materials. After heat treatment, the shape of the surface of the ceramic body = an insulating layer, so that the component The terminal electrode can be applied to the traditional chip type components

^鍍製程，將端電極鍍上一層焊接介面層，使端電極具有 =好的焊接特性，同時可避免陶瓷本體表面於後續電鍍製程中鍍上金屬，而造成產品短路失效，陶瓷本體表面塗佈、、、邑緣層之製程可於陶瓷本體燒結前；或陶瓷本體燒結後、端電極製作前；或陶瓷本體燒結及端電極製作後、電鍍前實施。此外’端電極製作前之陶瓷本體表面進行絕緣層塗佈時/可能使原本外露的内電極端部因表面絕緣層阻隔，致使後續製作之端電極無法與内電極電性導通，本發明之技術手#又主要是應用浸餘法及熱處理法使内電極端部向外伸展’以確保内電極與端電極形成良好的電性導通。《對先前技術之功效》相較於先前技術，本發明之絕緣方法具有以下優點·· 1 ·所形成之絕緣層不會限制端電極材料之選擇； 2·陶免本體表面具有平坦化的效果，可提高銲錫製程之後^ Plating process, the terminal electrode is plated with a welding interface layer, so that the terminal electrode has good welding characteristics, and at the same time, the surface of the ceramic body can be plated with metal in the subsequent electroplating process, which causes product short circuit failure and the coating of the ceramic body surface The process of forming the edge layer can be performed before the ceramic body is sintered; or after the ceramic body is sintered and before the terminal electrode is manufactured; or after the ceramic body is sintered and the terminal electrode is manufactured and before the electroplating. In addition, when the insulating layer is coated on the surface of the ceramic body before the terminal electrode is manufactured, the exposed end of the internal electrode may be blocked by the surface insulating layer, so that the terminal electrode produced later cannot be electrically connected with the internal electrode. The technology of the present invention The hand # is mainly to apply an immersion method and a heat treatment method to extend the end of the internal electrode outward to ensure that the internal electrode and the terminal electrode form a good electrical conduction. "Effect on the prior art" Compared with the prior art, the insulation method of the present invention has the following advantages: · 1 · The formed insulating layer does not limit the choice of terminal electrode materials; 2 · The surface of the ceramic body has a flattening effect Can improve after soldering process

第8頁 1235631 五、發明說明（5) 助録劑的清洗效果，避免因助銲劑殘留而提升漏電流，、告成產品失效； 3·本發明之内電極端部向外伸展之方法，可確保内電極血端電極形成良好的電性導通’不需增加元件兩端部絕_ 之清除製程；曰 4·陶瓷本體表面絕緣層之熱處理製程可和端電極之燒附制程合併實施，亦可和陶瓷本體之燒結製程合併實施二衣【實施方本發屬鹽類或本體表面層，使得程，將端焊接特性上金屬，陶瓷本體陶瓷本體極製作後一、陶瓷將尚有機化合料，厚度半導體性式】氧化物、金電壓抑制器形成一絕緣之電鍍製具有良好的鍵製程中鑛短路失效，燒結前；或燒結及端電如下：一層玻璃、絕緣性材燒結後之明主要是以玻璃、有機化合物、金屬其他高絕聲J生材料塗佈於多層陶瓷過上，經後，於陶瓷本體表面上元件之端電極可應用傳統晶片型元件電極鍍上一層焊接介面層，使端電極，同時可避免陶瓷本體表面於後續電使得元件之兩端電極導通，導致產口表面塗佈絕緣層之製程可於陶瓷本體燒結後、端電極製作前；或陶瓷本體、電鍍前實施，其具體實施方法詳述本體燒結前塗佈絕緣層未燒結的多層陶瓷生胚整體表面塗佈物、金屬氧化物、金屬鹽類或其他高約1〜100 /zm，然後再進行燒結製程陶瓷本體表面即形成一層絕緣層。Page 8 1235631 V. Description of the invention (5) The cleaning effect of the recording aid, avoiding the leakage current caused by the flux residue, and the failure of the finished product; 3. The method of extending the inner electrode end outwardly according to the present invention can ensure The internal electrode blood end electrode forms a good electrical continuity without the need to increase the removal process of the two ends of the component; said 4. The heat treatment process of the surface insulation layer of the ceramic body can be combined with the end electrode firing process, and can also be combined with The sintering process of the ceramic body is combined and implemented. [The implementation method is a salt or body surface layer, so that the end welding characteristics are metallized. After the ceramic body and the ceramic body pole are manufactured, the ceramic will still be organically compounded. The thickness is semi-conductive. ] The oxide and gold voltage suppressors form an insulated electroplating system with good bonding short-circuit failure during ore sintering, before sintering; or sintering and termination of electricity as follows: A layer of glass, insulating material after sintering is mainly glass, organic Compounds, metals and other high-insulation materials are coated on the multilayer ceramics, and after that, the components are on the surface of the ceramic body The terminal electrode can be coated with a soldering interface layer on the traditional chip-type component electrode to make the terminal electrode, and at the same time avoid the subsequent electrical conduction of the ceramic body surface to make the two electrodes of the component conductive, resulting in the process of coating the surface with an insulating layer on the ceramic. After the body is sintered and before the terminal electrode is manufactured; or the ceramic body is applied before the electroplating, the specific implementation method details the uncoated multilayer ceramic green embryo overall surface coating, metal oxide, and metal salts before the body is sintered. Or another 1 ~ 100 / zm high, and then a sintering process to form an insulating layer on the surface of the ceramic body.

第9頁 1235631 五、發明說明（6) 一、陶兗本將燒結璃、有機化材料，厚度半導體性陶三、陶瓷本多層陶前，於元件化物、金屬經熱處理後佈材料反應理過程中溶製程、以及體燒結後後、端電合物、金約1〜2 0 0 瓷材料與體燒結及瓷元件完整體表面鹽類或其，陶瓷本形成一絕入或混入電流導通、端電極製作前塗佈絕緣層極製作前之陶瓷本體表面塗佈一層玻屬氧化物、金屬鹽類或其他高絕緣性 # m，經熱處理後，陶瓷本體表面之表面塗佈材料反應形成一絕緣層。端電極製作後、電鍍前塗佈絕緣層成燒結製程及端電極製作後、電鍍之塗=一層玻璃、有機化合物、金屬氧他尚絕緣性材料，厚度約1〜5 〇 # m，體表面之半導體性陶瓷材料與表面塗緣層，端電極表面之塗佈材料於熱處端電極金屬中，並不影響後續之電鍍針對上述元件端絕緣塗佈，可能使原隔’致使後續製作之此’需使内電極端部成良好的電性導通，有二： •陶瓷本體燒結後，值及浸泡時間，使得屬因較耐浸蝕，而形 2·内電極含有銀或銀電極製作前之陶兗本外露的内電極端端電極無法與内電向外伸展，以確保本發明之内電極端經酸或鹼液浸泡，陶究本體表面受浸成内電極端部凸出合金成份，於表面本體六個表面進行部因表面絕緣層阻極電性導通，因内電極與端電極形部向外伸展之方法控制酸或鹼液之pH 餘内縮，内電極金於陶瓷本體外。塗佈絕緣層及製作Page 9 of 1235631 V. Description of the invention (6) 1. Pottery will be sintered glass, organic materials, thickness semiconductor ceramics 3. Ceramics, multilayer ceramics, in the reaction process of component materials and metal after heat treatment of cloth materials After the melting process, and after the body is sintered, the terminal compound, gold is about 1 ~ 2 0, the ceramic material and the body are sintered, and the surface of the ceramic element is complete with salts or ceramics, which form an insulated or mixed current conducting terminal electrode. Coating the insulation layer before fabrication The surface of the ceramic body before fabrication is coated with a layer of vitreous oxide, metal salt or other high insulation #m. After heat treatment, the surface coating material on the surface of the ceramic body reacts to form an insulation layer. After the terminal electrode is manufactured, the insulating layer is coated to form a sintering process before the plating. After the terminal electrode is manufactured, the coating is plated = a layer of glass, organic compounds, and metal-oxygen and other insulating materials. The thickness is about 1 ~ 50 mm. The semi-conductive ceramic material and the surface coating edge layer, and the coating material on the surface of the terminal electrode are in the hot end electrode metal, which does not affect the subsequent electroplating of the above-mentioned component end insulation coating, which may cause the original barrier to 'make subsequent manufacturing this' Need to make the end of the internal electrode good electrical conduction, there are two: • After the ceramic body is sintered, the value and immersion time make it more resistant to erosion, the shape 2 · The internal electrode contains silver or the ceramic before the silver electrode is made The exposed internal electrode end electrode cannot extend outward with the internal electricity to ensure that the internal electrode end of the present invention is soaked with acid or alkali, and the surface of the body is immersed into an alloy component protruding from the end of the internal electrode on the surface body. The six surface conducting parts are electrically conductive due to the resistance of the surface insulating layer, and the internal electrode and the terminal electrode shape are extended outward to control the pH of the acid or alkaline solution. In vitro. Coating insulation layer and production

第10頁五、發明說明（7) 端電極之後，再施以25〇。〇以上銀因受到端電極中銀成份的牽引而向外伸展。電極之至屬實施例：上述大致說明本發明，以下將人更詳細說明本發明，因M、隹】口具體的較佳實施例 1伞心明，因此可進一步了解本發明。實施例一：所示本二：：於陶瓷本！燒結前塗佈絕緣層，如第2 A圖二、、里k陶瓷生胚薄片製作、印刷堆聂及切宝J成句含陶瓷本體10盥内雷— 且及刀d成別元件生胚# 土! 早一70件生胚等過程後，將個與其表面塗佈層一起„〇"m，將元件生胚用之燒結條件採用元件原本使用之k、、口製私條件，燒社德BP游Α、，Μ 包含芦姓德$ _ 2 士後即形成如弟Μ圖所示之結構，竟本體表面材料於燒姓過程、及玻璃塗料層與陶接签，#二从麂、^過転中反應生成的表面絕緣層60。示，原本外：：肉：部塗附端電極及燒附後，如第2C圖所 ’、” 路内電極22端部可能殘留少量玻璃塗料8〇，而阻隔内電極22端部與端電極3 :==塗=，需實施50(TC以上之埶_裡 &間的電性導通，因此，電極32中之銀成二熱牵處引理而二電：22 ^ ^ 通，如第2D圖所示，若選擇；上：展’形成良好的電性導製程使内電極22端部端電極材料’該熱處理口卜1甲展的實施程序可和端電極的燒 1235631 五、發明說明（8) 附製程合併實施而得到相同的效果。以上程序完成後，該元件可經由傳統晶片型元件之後續電鍍製程而得到正常的電鍍效果，端電極之間的陶瓷本體表面經絕緣處理後，不會鍍上金屬。實施例二：本實施例係於陶瓷本體燒結後、端電極製作前塗佈絕緣層，材料經陶瓷生胚薄片製作、印刷堆疊、切割及燒結後，即形成如第3A圖所示之結構，包含陶瓷本體△與極22，將燒結後的元件塗佈一層主要成份為鋅—硼—矽之氧化物混合塗料層，再實施50 0 t: s85(rCi熱處理，即形成如第3B圖所示之結構，包含陶瓷本體12、内電極“及氧化物混合塗料層與陶瓷本體表面材料於熱處理過程中反應生成的表面絕緣層6 〇。〜Page 10 V. Description of the invention (7) After the terminal electrode, apply 25 °. 〇 Above, silver is stretched out due to being pulled by the silver component in the terminal electrode. The embodiment of the electrode: The above generally describes the present invention, and the following will explain the present invention in more detail. Because the specific preferred embodiments of the M and H ports are clear, the present invention can be further understood. Example 1: The second book shown: In the ceramic book! Apply an insulating layer before sintering, as shown in Figure 2A, Fig. 2 and 3, making ceramic green embryo flakes, printing and stacking Nie and Qibao J. The sentence contains the ceramic body 10 internal mines — and the knife d into other components raw embryo # 土As early as 70 pieces of green embryos, etc., they will be combined with the surface coating layer 『〇 " m, and the sintering conditions for the green embryos of the components shall be the same as those used in the original components. You A, and M include Lu Xingde $ _ 2 after the formation of a structure as shown in the figure of the younger brother, the surface material of the body during the burning process, and the glass coating layer and pottery sign, # 二从鹿、 ^ 过転The surface insulation layer 60 formed by the intermediate reaction is shown in Fig. 2. After the end electrode is coated and burned, a small amount of glass coating 80 may remain on the end of the electrode 22 in the circuit, as shown in Figure 2C. To block the end of the internal electrode 22 and the terminal electrode 3: == coat =, it is necessary to implement electrical conduction between 50 (TC and above), so the silver in the electrode 32 is a lemma and two Electricity: 22 ^ ^ on, as shown in Figure 2D, if selected; Upper: Zhan 'to form a good electrical conductivity process so that the internal electrode 22 end electrode material It is expected that the implementation process of the heat treatment process 1A exhibition can be combined with the burning of the terminal electrode 1235631 V. Description of the invention (8) The combined process is implemented to obtain the same effect. After the above procedures are completed, the component can be passed through the traditional wafer-type component. The subsequent electroplating process has obtained the normal plating effect, and the surface of the ceramic body between the terminal electrodes will not be plated with metal after the insulation treatment. Example 2: This example is to apply insulation after the ceramic body is sintered and before the terminal electrode is manufactured. After the ceramic green sheet is made, printed, stacked, cut and sintered, the structure is formed as shown in Figure 3A, which includes the ceramic body △ and the pole 22. The sintered component is coated with a layer of zinc— Boron-silicon oxide mixed coating layer, and then subjected to 50 0 t: s85 (rCi heat treatment, to form the structure shown in Figure 3B, including the ceramic body 12, the internal electrode ", and the oxide mixed coating layer and the surface of the ceramic body The surface insulation layer 6 formed by the reaction of the material during the heat treatment process.

^: ’該元件端部塗附端電極及燒附後，如第3c圖所二’原本外露的内電極22端部可能殘存少量氧化物混合塗料80，而阻隔内電極22端部與端電極3〇之間的因此，需實施500 t：以上之熱處理，内導I 受到端電極32中銀成份的牽引而向外伸展，、好銀性導通，如第3D圖所示，若選擇/成良好的電處理製程使内電極22端部向； = = =材料’該熱緣層熱處理及端電極之燒附製程：：：：；面絕的效果。 ^ σ併貝轭而得到相同以上程序完成後該π件可經由傳統晶片型元件之後^: 'After the end electrode of this element is coated and fired, as shown in Figure 3c', a small amount of oxide mixed coating 80 may remain on the end of the internal electrode 22 that was originally exposed, and block the end of the internal electrode 22 from the terminal electrode. Therefore, it is necessary to perform 500 t: heat treatment above, the internal conduction I is pulled outward by the silver component in the terminal electrode 32, and the silver conduction is good, as shown in Figure 3D. The electrical processing process makes the end of the inner electrode 22 oriented; = = = Material 'The heat edge layer heat treatment and end electrode firing process ::::; The effect of surface insulation. ^ σ and yoke to get the same. After the above procedures are completed, the

12356311235631

端電極之間的陶瓷本五、發明說明（9) 續電鑛製程而得到正常的電鍍效果，體表面經絕緣處理後，不會錢上金屬實施例三：本：，例係於陶€本體燒結後、端電極製作 :即經陶曼生胚薄片製作、印刷堆疊“刀割及燒結炼22，‘成如第4A圖所不之結構’包含陶瓷本體12與内電，、、、'後將該燒結後的70件浸泡於〇. 5%HC1水溶液中1分 :陶竞本體12受到浸餘而内縮，使得内電極2 :夕卜凸出，如第4B圖所示，其次，將處理後的元件塗佈一層主要成份為辞-硼-矽之玻璃塗料層，接著實施5〇〇。〇至 7〇〇 C之熱處理，即形成如第4C圖所示之結構，包含陶 f體12、内電極22及玻璃塗料層與陶竟本體表面材料於埶處理過程中反應生成的表面絕緣層6 〇。 ”、、一接著，該元件端部塗附端電極及燒附後，如第4D圖所不，原先已向外裸露的内電極22端部和端電極32之間具良好的電導通特性，上述之表面絕緣層熱處理製程可^端電極的燒附製程合併實施而得到相同的效果。以上程序完成後，該元件可經由傳統晶片型元件之後績電鍍製程而得到正常的電鍍效果，端電極之間的陶究本體表面經絕緣處理後，不會鍍上金屬。實施例四：本實施例係於元件完成燒結製程及端電極製作後、電Ceramics between the terminal electrodes V. Description of the invention (9) The normal electroplating effect is obtained after the power ore process is continued. After the surface of the body is insulated, the metal will not be used. Example 3: This example is based on the ceramic body After sintering, the production of terminal electrodes: that is, through the production of Taoman green sheet, printing and stacking "knife cutting and sintering 22", 'to form a structure not shown in Figure 4A' includes ceramic body 12 and internal electricity, 70 pieces after sintering were immersed in 0.5% HC1 aqueous solution for 1 minute: Tao Jing body 12 was immersed and shrunk to make the internal electrode 2: Xibu protruding, as shown in FIG. 4B. Second, after the treatment, The element is coated with a glass coating layer whose main component is boro-silicon, and then subjected to a heat treatment of 50000 to 700C to form a structure as shown in FIG. 4C, which includes a ceramic body 12, The internal electrode 22, the glass coating layer, and the surface insulation layer 6 formed by the reaction of the surface material of the ceramic body during the concrete treatment process. "", And then, after the end electrode of the element is coated with the end electrode and fired, as shown in FIG. 4D No, there is a gap between the end of the internal electrode 22 and the terminal electrode 32 that had been exposed to the outside. Good electrical conduction properties, sticking the above-described embodiment of the process combined surface of the insulating layer of the heat treatment process may end electrodes ^ the same effect is obtained. After the above procedures are completed, the element can be subjected to a normal electroplating process after a conventional wafer-type element electroplating process. The surface of the ceramic body between the terminal electrodes is not coated with metal after the insulation treatment. Embodiment 4: This embodiment is performed after the components have completed the sintering process and the terminal electrodes are manufactured.

第13頁 1235631 五、發明說明（10) 鍍之前塗佈絕緣層，元件經傳統之積層晶片型元件製程後、電鑛之前得到如弟5 A圖所不之結構，包含陶究本體 12、内電極22及端電極32 ’接著將該元件表面塗佈一芦主要成份為鉛-鋅-硼-矽之玻璃塗料層40，如第㈤圖所厂、θ，然後實施50(TC至700 °C之熱處理，即形成如第5/圖所$干社構，包含陶堯本體12、内電極22、端電極32以及玻璃塗^ 層與陶瓷本體表面材料於熱處理過程中反應生成的表面絕緣層60，塗佈於端電極表面之塗料於熱處理過程中溶入或混入端電極金屬中，端電極表面仍保持良好的導電特性一， =層之熱處理製程可和端電極的燒附製程施而付到相同的效果。續電二i:ί:成後，M元件可經由傳統晶片型元件之後體表：it::到正常的電鍍效果1電極之間的陶究本體表面絰絕緣處理後，$會鍍上金屬。已，：以=以解釋本創作之較佳實施例而凡有在相同下:ΐ任何形式上之限制，是以，更’皆為本創作巾 f作有關本創作之任何修飾或變 T明專利範圍所涵蓋。 1235631 圖式簡單說明弟1 A圖為習知多層式晶片型陶兗過電壓抑制器元件之平面不意圖，第1B圖為第1A圖所示之習知多層式晶片型陶曼過電壓抑制器元件縱方向之剖面結構圖；第1 C圖為第1 A圖所示之習知多層式晶片型陶瓷過電壓抑制器元件横方向之剖面結構圖；第2 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第一只施例，陶瓷本體燒結之前，表面塗佈一層玻璃塗料層之剖面結構示意圖；第2B圖為繼第2A圖製程，進行燒結後，於其表面形成一絕緣層之剖面結構示意圖；第2C圖為繼第2B圖製程，該元件端部塗附端電極及燒附後之剖面結構示意圖；Page 13 1235631 V. Description of the invention (10) Insulation layer is applied before plating. After the traditional multilayer chip type component manufacturing process, before the power ore, the structure as shown in Figure 5A is obtained, including the ceramic body 12, inner The electrode 22 and the terminal electrode 32 'are then coated on the surface of the element with a glass coating layer 40 containing lead-zinc-boron-silicon as the main component, as shown in Figure VII, θ, and then 50 (TC to 700 ° C) The heat treatment forms a dry body structure as shown in FIG. 5 / FIG., Which includes the Tao Yao body 12, the internal electrode 22, the terminal electrode 32, and the glass coating layer and the surface insulation layer 60 of the ceramic body surface material during the heat treatment process. The coating applied to the surface of the terminal electrode is dissolved or mixed into the terminal electrode metal during the heat treatment, and the surface of the terminal electrode still maintains good electrical conductivity. The heat treatment process of the layer can be applied together with the firing process of the terminal electrode. The same effect. After the second power i: ί: After the completion, the M element can pass through the traditional wafer-type element after the body surface: it :: to the normal plating effect 1 the ceramic body surface between the electrodes 绖 insulation treatment, $ will Coated with metal. Already: explained with = The preferred embodiment of the creation is under the same: (1) any form of limitation, that is, more, are all modifications or changes related to the creation of this creation, which are covered by the patent scope. 1235631 Schematic Briefly explain that Figure 1A is a plan view of a conventional multilayer chip type ceramic magister overvoltage suppressor element, and Figure 1B is a longitudinal direction of the conventional multilayer chip type talman overvoltage suppressor element shown in Figure 1A 1C is a cross-sectional structural diagram of a conventional multilayer wafer-type ceramic overvoltage suppressor element shown in FIG. 1A; FIG. 2A is a multilayer wafer-type ceramic wafer of the present invention. In the first example of the voltage suppressor element, before the sintering of the ceramic body, a schematic cross-sectional structure of a glass coating layer is coated on the surface; Fig. 2B is a cross-section of an insulating layer formed on the surface after sintering following the process of Fig. 2A. Schematic diagram of the structure; Figure 2C is a schematic diagram of the cross-sectional structure of the component after the end electrode is coated and fired after the manufacturing process of Figure 2B;

於其表面塗佈一層氧化物混合塗於其表面形成一絕緣層之剖面結第3B圖為繼第3A圖製程，料層’再經熱處理製程，構示意圖；第3C圖為繼第3B圖製程之剖面結構示意圖； #元件端部塗附端電極及燒附後該元件經熱處理後之剖面結構示第3D圖為繼第3c圖製程Apply a layer of oxide on its surface and mix it on its surface to form an insulating layer. Section 3B is a diagram following the process of FIG. 3A, and the material layer is then subjected to a heat treatment process to form a schematic diagram. FIG. 3C is a process following the process of FIG. 3B. Schematic diagram of the cross-sectional structure; #The cross-sectional structure of the component after the end electrode is coated with a terminal electrode and after the heat treatment is shown in FIG. 3D is a process following FIG. 3c

第15頁 1235631Page 15 1235631

圖式簡單說明意圖；第4 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第三實施例，陶瓷本體燒結後、端電極製作之前之剖面結構第4B圖為繼第4A圖製程，該元件浸泡於〇· 5%HC1水溶液中j 分鐘後，内電極端部向外凸出之剖面結構示意圖；第4C圖為繼第4B圖製程，該元件表面塗佈一層玻璃塗料層，再經熱處理製程，於其表面形成一絕緣層之剖面結構不意圖；第4 D圖為繼第4 C圖製程，該元件端部塗附端電極及燒附後之剖面結構示意圖；第5 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第四實施例，陶瓷本體燒結後並完成端電極製作後之剖面結構不意圖；第5B圖為繼第5A圖製程，於其表面塗佈一層玻璃塗料層之剖面結構示意圖；第5C圖為繼第5B圖製程，再經熱處理程序，於其表面形成一絕緣層之剖面結構示意圖。【元件符號簡單說明】尚未燒結之陶瓷本體1 0 燒結後之陶瓷本體1 2 尚未燒結之内電極20 燒結後之内電極22The drawing is for simple explanation; FIG. 4A is a third embodiment of the multilayer wafer-type ceramic overvoltage suppressor element of the present invention. The cross-sectional structure of the ceramic body after sintering and before the terminal electrode is manufactured. FIG. 4B is a process following FIG. 4A. After the element is immersed in a 0.5% HC1 aqueous solution for j minutes, the cross-sectional structure of the inner electrode end is projected outward; Figure 4C is a process following Figure 4B, the surface of the element is coated with a glass coating layer, and After the heat treatment process, the cross-sectional structure of an insulating layer is not intended on the surface; FIG. 4D is a schematic diagram of the cross-sectional structure of the component after the end electrode is coated with the terminal electrode and after firing; FIG. 5A This is the fourth embodiment of the multilayer wafer-type ceramic overvoltage suppressor element of the present invention. The cross-sectional structure after the ceramic body is sintered and the terminal electrode is completed is not intended. Figure 5B is a process following Figure 5A, and the surface is coated. A schematic view of the cross-sectional structure of a glass coating layer; FIG. 5C is a schematic view of the cross-sectional structure of an insulating layer formed on the surface after the process of FIG. 5B and then subjected to a heat treatment process. [Simple description of component symbols] Ceramic body that has not been sintered 1 0 Ceramic body that has been sintered 1 2 Internal electrode that has not been sintered 20 Internal electrode after sintering 22

1235631 圖式簡單說明尚未燒附之端電極30 燒附後之端電極3 2 未經熱處理的陶瓷本體表面之塗料層4 0 表面絕緣層6 0 表面絕緣層製作完成後，内電極端部殘存之塗料80 li·· 第17頁1235631 The diagram simply illustrates the end electrode that has not been fired. 30 The end electrode after fired. 3 2 The coating layer on the surface of the ceramic body without heat treatment. 4 0 Surface insulation layer. Coatings 80 li ·· Page 17

Claims

1235631 ------案號92132只的曰六、申請專利範圍製程完成後，再以熱處理一展，以確保該内電極邀该凡件之内電極端部向外伸 6·如申請專利範圍第5項所述η良好曰的電性導通。抑制器元件之表面絕緣方苴夕曰式晶片型陶瓷過電壓内電極端部向外伸展的a L L其，該熱處理法使該元件之端電極之燒附製冑同日4 D f序可和I面絕緣層熱處理及 7.如申請專利範圍第二實二抑制器元件之表面絕緣方法曰式:片型陶莞過電二展的方法，其特徵在於· 該内電極端部向外伸後，施以25(TC以上之勒走、製作表絕緣層及端電極之電極中之銀成份的牵引而处理’内電極中之金屬銀受到端 J罕W而向外伸出於陶窨太騁从 .如申請專利範圍第5或7項 -陶 ==件;r絕緣方法… 為本體之晶片型他以丰導體性或低絕緣性材料作 H i ΐ式晶片型陶瓷過電壓抑制器元件之表面絕緣方法’係於該陶瓷本體燒結後、端電極製作前，將該元件浸 /包於I或驗液中，使得陶瓷本體表面受浸姓内縮，内電極金屬因杈，浸蝕，而形成内電極端部凸出於陶瓷本體外；然後再以兩絕緣性材料塗佈於陶瓷本體表面上，接著再進行熱處^製程，半導體性陶瓷本體表面即形成一絕緣層；最後再製作端電極，即可確保該内電極與端電極形成良好的電性導通。 1 0 ·如申請專利範圍第9項所述之多層式晶片型陶瓷過電壓 19頁 1235631 -------- 921 _手月曰_ 修正六、申請專利範圍 $制器元件之表面絕緣方法，其中表面絕緣層熱處理製程 "和端電極之燒附製程合併實施而得到相同的效果。 11 ·如申請專利範圍第9項所述之多層式晶片型陶瓷過電壓 P制器元件之表面絕緣方法，其中使該内電極端部向外伸 =方法’其特徵在於：陶瓷本體燒結後、表面絕緣層製則L該7L件浸泡於酸或鹼液中，使得陶瓷本體表面受浸内縮’内電極金屬凸出於陶瓷本體外。 j·如申請專利範圍第9或11項所述之多層式晶片型陶瓷過外壓抑制器元件之表面絕緣方法，其中使該内電極端部向夕伸展的方法，亦適用於其他以半導體性或低絕緣性材作為本體之晶片型電子元件。 13·、種多層式晶片型陶瓷過電壓抑制器元件之表面絕緣 f法’係於該陶竟本體燒結及端電極製作後、電鍍前，以 =絕緣性材料塗佈於陶变本體表面上，再進行熱處理製 ^半導體性陶瓷本體表面即形成一絕緣層，塗佈於端電玉面之塗料於熱處理過程中溶入或混入端電極金屬中，端電極表面仍保持良好的導電特性。 ϋ申又專利範圍第13項所述之多層式晶片型陶瓷過電痉P J器元件之表面絕緣方法豆中表面絕緣層熱處理製 =可Λ端Λ極之燒附製程合併實施而得到相同的效果。利範圍第1、5、9或13項所述之多層式晶片型 ΞίΐϊΐΓ制器70件之表面絕緣方法，•中該高絕緣性材料為玻璃。 16·如申請專利範圍第J、5、9或13項所述之多層式晶片型1235631 ------ Case No. 92132, six. After the patent application process is completed, a heat treatment will be performed to ensure that the inner electrode invites the end of the inner electrode of each piece to extend outward. 6. If a patent is applied for Η described in the range item 5 has good electrical continuity. The surface insulation of the suppressor element Fang Xixi Japanese wafer-type ceramic over-voltage inner electrode end extending outward a LL, this heat treatment method makes the element's terminal electrode firing attached on the same day 4 D f sequence can be combined with I Heat treatment of the surface insulation layer and 7. In the case of the patent application, the surface insulation method of the second real suppressor element is described as follows: the method of sheet-shaped ceramics over-electricity second development is characterized in that after the end of the inner electrode is extended outward, Apply 25 (TC or above) to pull the silver component in the electrode that makes the surface insulation layer and terminal electrode to deal with the metal silver in the internal electrode. .If the patent application scope item 5 or 7-pottery == pieces; r insulation method ... for the body's wafer type, he uses a high-conductivity or low-insulation material as the surface of the H i ΐ chip-type ceramic overvoltage suppressor element The method of insulation is that after the ceramic body is sintered and before the terminal electrodes are made, the component is immersed / encapsulated in I or test solution, so that the surface of the ceramic body is shrunk by the impregnation, and the internal electrode metal is formed due to corrosion and erosion. The electrode ends protrude out of the ceramic body; An insulating material is coated on the surface of the ceramic body, and then a heat treatment process is performed to form an insulating layer on the surface of the semiconductor ceramic body. Finally, a terminal electrode is produced to ensure that the internal electrode and the terminal electrode form a good electrical property. 10. The multi-layer wafer-type ceramic overvoltage as described in item 9 of the scope of patent application 19 page 1235631 -------- 921 _ 手月说 _ Amendment VI. Surface insulation method, wherein the surface insulation layer heat treatment process & the terminal electrode firing process are combined and implemented to obtain the same effect. 11 · The multilayer wafer-type ceramic overvoltage P device component as described in item 9 of the scope of patent application The surface insulation method, wherein the end of the internal electrode is extended outward = method 'characterized in that: after the ceramic body is sintered, the surface insulation layer is immersed in the acid or alkali solution, so that the surface of the ceramic body is immersed Retracted 'internal electrode metal protrudes out of the ceramic body. J. The surface insulation method of the multilayer wafer type ceramic over-external pressure suppressor element as described in item 9 or 11 of the scope of patent application, which The method of extending the end of the internal electrode in the middle of the night is also applicable to other wafer-type electronic components with semiconductor or low-insulation material as the body. 13. Surface insulation of a multilayer wafer-type ceramic overvoltage suppressor element The f method is after the ceramic body is sintered and the terminal electrodes are made, and before plating, it is coated with an insulating material on the surface of the ceramic body, and then heat-treated to form an insulating layer on the surface of the semiconductor ceramic body. The coating on the surface of the terminal electric jade is dissolved or mixed into the terminal electrode metal during the heat treatment, and the surface of the terminal electrode still maintains good conductive properties. The multilayer chip type ceramic over-electrical spasm described in item 13 of the patent scope Surface insulation method of PJ device components The heat treatment of the surface insulation layer of the bean = the Λ end Λ pole firing process can be combined and implemented to obtain the same effect. The surface insulation method of 70 pieces of multi-layer wafer-type Ξ ΐϊΐ Γ 制 device as described in item 1, 5, 9, or 13 of the scope of interest. The medium-high-insulation material is glass. 16. Multi-layer wafer type as described in patent application No. J, 5, 9, or 13

第20頁Page 20

，其中該高緣性 1235631 案號 92132805 六、申請專利範圍陶竟過電μ抑制器元件之表面絕緣方法材料可為有機化合物。 17·如申請專利範圍第1、5、9或13項所述之多層式晶片变陶瓷過電壓抑制器元件之表面絕緣方法，其中該高絕緣性材料可為金屬氧化物。、… 18·如申請專利範圍第1、5、9或13項所述之多層式晶片型陶兗過電壓抑制器元件之表面絕緣方法，其中該高絕材料可為金屬鹽類。 ^ 1 9 ·如申請專利範圍第i、5、9或丨3項所述之多層式晶陶兗過電壓抑制器元件之表面絕緣方法，亦適用於 & 牛導體性或低絕緣性材料作為本體之晶片型電子元人面絕緣。之表Among them, the high-margin 1235631 case number 92132805 6. Scope of patent application The surface insulation method of the ceramic over-suppressor element can be an organic compound. 17. The surface insulation method of a multilayer wafer change ceramic overvoltage suppressor element as described in claim 1, 5, 9, or 13, wherein the highly insulating material may be a metal oxide. 18 ... The surface insulation method of the multilayer wafer type ceramic overvoltage suppressor element according to item 1, 5, 9, or 13 of the scope of the patent application, wherein the high insulation material may be a metal salt. ^ 1 9 · The surface insulation method of the multilayer crystal pottery 电压 overvoltage suppressor element described in item i, 5, 9 or 丨 3 of the scope of patent application, also applicable to & cattle conductive or low-insulation materials as The body's wafer-type electronic element is insulated from the human face. Table

第21頁Page 21