TWI232692B

TWI232692B - Method of fabricating electro-thermal film

Info

Publication number: TWI232692B
Application number: TW92126940A
Authority: TW
Inventors: Cheng-Tao Wu; Shih-Yao Sun; Shih-Lun Lo; Chung-Yin Lin
Original assignee: Helix Technology Inc
Priority date: 2003-09-30
Filing date: 2003-09-30
Publication date: 2005-05-11
Also published as: TW200513135A

Abstract

A method of fabricating electro-thermal film is provided. The method comprises steps of (a) providing a substrate; (b) performing a surface treatment by dipping on the substrate to planarize the surface of the substrate; (c) forming a first conductive layer and a first insulating layer. The first conductive layer is formed on the substrate, the first insulating layer is formed on the first conductive layer and extended to the substrate.

Description

^3269^ 3269

技術領域且特別是有關於一種使用涵浸製程 process )對基板進行平坦化處理的電熱膜製的a明是有關於一種電熱膜（electro-thermal film u造方法 APP〜The technical field, and in particular, relates to an electrothermal film made by using a immersion immersion process to planarize a substrate, and relates to an electro-thermal film (electro-thermal film manufacturing method APP ~)

\方法。產生的趣市面上常見的電熱裝置’主要都是藉由通電時所的熱能電阻效應將通入的電能轉換成熱能，並利用所產生電阻^達到加熱目的。電熱裝置的工作原理幾乎不會脫出陶瓷"加ί ί範嘴。一般常見的電熱裝置主要有正溫度係數 Ρ . …( p. T. C )以及負溫度係數陶瓷加熱器Ν, τ 或疋/以電阻絲捲繞形成電阻線狀之電熱裝置。但由· 於正溫度係數陶瓷加熱器將電能轉換成熱能時，陶器的熱谷量（Heat Capacity )會趨於飽和，造成陶替…、熱器之阻抗變咼而導致加熱功率降低，故常出現加熱-加不佳的現象。而電阻線狀之電熱裝置中用以加熱之g =率在製作、加工上十分複雜，導致成本提高，並不符人，絲上之考量。因此，現今的電熱裝置多採用電熱膜作^、及濟的工具’以提供較佳的加熱功率並減少單位密度二加熱減。牛之衰電熱膜主要係由一絕緣基材、配置於絕緣基材層導體層與多層介電層及位於外部的一層保護層所的多為了有效控制導體層與介電層的加工精度與均勻度，j。通常利用錢鍍（Sputtering)的方法來製作電熱膜。驾知、。意印\method. The generated common electric heating devices on the market are mainly used to convert the incoming electrical energy into thermal energy through the thermal energy resistance effect when energized, and use the generated resistance ^ to achieve heating purposes. The working principle of the electric heating device will hardly come out of the ceramic. Generally common electric heating devices are mainly positive temperature coefficients P... (P. T. C) and negative temperature coefficient ceramic heaters N, τ or 疋 / wound with resistance wires to form resistance wire-shaped electric heating devices. However, since the positive temperature coefficient ceramic heater converts electrical energy into thermal energy, the heat capacity of the pottery will tend to saturate, causing the pottery ..., the resistance of the heater will change and the heating power will decrease, so it often appears Heating-poor addition. The g = rate used for heating in the resistance-line electric heating device is very complicated in production and processing, which leads to an increase in cost, which is not in line with human considerations. Therefore, today's electric heating devices mostly use electric heating film as an economic tool to provide better heating power and reduce unit density and heating loss. Niu Zhifa's electric heating film is mainly composed of an insulating substrate, a conductive layer and a multilayer dielectric layer disposed on the insulating substrate layer, and a protective layer located on the outside in order to effectively control the processing accuracy and uniformity of the conductive layer and the dielectric layer. Degrees, j. The electrothermal film is usually made by a method of sputtering. Driving knowledge. Italian print

11697twf1.ptd 第8頁 1232692 五、發明說明（2) 在一絕緣基板的表面上，利用濺鍍的方法，交互鍍上多層的金屬層與介電層及最後的一層保護層，並對保護層進行高溫氧化的處理，便完成一電熱膜的製作。習知的電熱膜製作方法中，在導體層以及介電層鍍製之前，通常會先將二氧化錫印刷（printing)在基板上，使基板之表面平坦化。由於未經平坦化處理之基板表面上存在的孔隙較多，使得在形成電熱膜的過程中，電熱膜表面的微小水分子易藏在基板表面之孔隙當中，在長期使用下，會破壞在基板之表面上所形成之電熱膜，而有電熱膜在部分區域斷掉的情形產生，且將導致電熱膜的單位密度功率衰減率較高，因此進行平坦化的目的即在於獲得較佳的電熱膜特性。值得注意的是，由於習知係以印刷的方式將基板表面平坦化，而印刷在基板上的二氧化錫厚度必須藉由印刷治具精準地控制方可印刷出均勻的膜厚，以獲得平坦之表面。因此，在印刷治具的設計上將需投入許多成本，方可獲得預期的平坦化效果。發明内容有鑑於此，本發明之目的就是在提供一種電熱膜之製作方法，其藉由涵浸的歹式使基板之表面平坦化，進而使得電熱膜具有單位密度功率衰減率低的優點。本發明之再一目的就是在提供一種電熱膜之製作方法，可藉由涵浸的方式同時對基板的正、反表面進行平坦化的處理，當製造者欲在基板的正、反表面鍍製電熱膜11697twf1.ptd Page 8 1232692 5. Description of the invention (2) On the surface of an insulating substrate, a multi-layer metal layer, a dielectric layer, and a final protective layer are alternately plated by a sputtering method, and the protective layer is applied. After the high-temperature oxidation treatment, an electrothermal film is completed. In the conventional manufacturing method of the electrothermal film, tin dioxide is usually printed on the substrate before the conductor layer and the dielectric layer are plated to flatten the surface of the substrate. Because there are many pores on the surface of the substrate without planarization treatment, during the process of forming the electrothermal film, the tiny water molecules on the surface of the electrothermal film are easily hidden in the pores on the surface of the substrate. Under long-term use, it will destroy the substrate The electric heating film formed on the surface, and the electric heating film is broken in some areas, and will result in a higher power density per unit density of the electric heating film. Therefore, the purpose of planarization is to obtain a better electric heating film. characteristic. It is worth noting that, because the conventional method is to flatten the surface of the substrate by printing, the thickness of tin dioxide printed on the substrate must be accurately controlled by the printing jig to print a uniform film thickness to obtain flatness. The surface. Therefore, many costs will be invested in the design of the printing jig to obtain the desired flattening effect. SUMMARY OF THE INVENTION In view of this, an object of the present invention is to provide a method for manufacturing an electrothermal film, which planarizes the surface of a substrate by a immersion method, so that the electrothermal film has the advantage of low power density per unit density. Another object of the present invention is to provide a method for manufacturing an electrothermal film, which can simultaneously planarize the front and back surfaces of a substrate by immersion. When a manufacturer wants to plate the front and back surfaces of a substrate, Electric film

11697twfl.ptd 第9頁 1232692 五、發明說明（3) 時，本發明之涵浸製程具有效縮短製程之時間的優點。本發明之又一目的就是在提供一種電熱膜之製作方法，可藉由控制涵浸時間的方法，精確地控制平坦化材料附著在基板上的厚度，毋須使用習知的印刷治具，就可獲得預期的平坦化效果，進而使得本發明之涵浸製程具有節省印刷治具成本的優點。為達本發明之上述目的，本發明提出一種電熱膜的製造方法，此方法係提供一基板，並將基板涵浸於一平坦化材料之溶液中，使平坦化材料附著於基板之表面，並烘烤基板上之平坦化材料，以使基板表面藉由平坦化材料而平坦化。接著，於基板上依序形成第一導體層以及第一絕緣層，其中第一導體層形成於基板之上，第一絕緣層形成於第一導體層之上並向外延伸至基板之上。為達本發明之上述目的，本發明提出一種電熱膜的製造方法，此方法係提供一基板，並將基板涵浸於一平坦化材料之溶液中，使平坦化材料附著於基板之表面，並烘烤基板上之平坦化材料，以使基板表面藉由平坦化材料而平坦化。接著，於基板上依序形成第一導體層、第一絕緣層、第二導體層以及第二絕緣層，其中第一導體層形成於基板之上，第一絕緣層形成於第一導體層之上，第二導體層形成於第一絕緣層之上，第二絕緣層形成於第二導體層之上並向外延伸及形成於基板之上。上述電熱膜的製造方法中，基板例如係涵浸於二氧化矽之有機溶膠或是烷基矽酸鹽類之有機溶液中。11697twfl.ptd Page 9 1232692 5. In the description of the invention (3), the immersion immersion process of the present invention has the advantage of shortening the process time. Another object of the present invention is to provide a method for manufacturing an electrothermal film, which can precisely control the thickness of a planarizing material attached to a substrate by controlling the immersion time without using a conventional printing jig. The expected flattening effect is obtained, so that the immersion process of the present invention has the advantage of saving the cost of printing jigs. In order to achieve the above object of the present invention, the present invention provides a method for manufacturing an electrothermal film. This method is to provide a substrate, and immerse the substrate in a solution of a planarizing material, so that the planarizing material is attached to the surface of the substrate, and The planarizing material on the substrate is baked so that the substrate surface is planarized by the planarizing material. Then, a first conductor layer and a first insulating layer are sequentially formed on the substrate, wherein the first conductor layer is formed on the substrate, and the first insulating layer is formed on the first conductor layer and extends outwardly onto the substrate. In order to achieve the above object of the present invention, the present invention provides a method for manufacturing an electrothermal film. This method is to provide a substrate, and immerse the substrate in a solution of a planarizing material, so that the planarizing material is attached to the surface of the substrate, and The planarizing material on the substrate is baked so that the substrate surface is planarized by the planarizing material. Next, a first conductor layer, a first insulation layer, a second conductor layer, and a second insulation layer are sequentially formed on the substrate. The first conductor layer is formed on the substrate, and the first insulation layer is formed on the first conductor layer. The second conductive layer is formed on the first insulating layer, and the second insulating layer is formed on the second conductive layer and extends outward and is formed on the substrate. In the method for manufacturing an electrothermal film, the substrate is immersed in an organic sol of silicon dioxide or an organic solution of an alkyl silicate, for example.

11697twfl.ptd 第10頁 123269211697twfl.ptd Page 10 1232692

五、發明說明（4) 上述電熱膜的製造方法中，基板上之平坦化材料的烘烤方式例如係先放置在攝氏1 〇〇度的溫度當中，而其棋烤/、時間例如為3 〇分鐘，再放置於例如係攝氏5 0 0度的溫度中’而其烘烤時間例如為3 0分鐘。卜上述電熱膜的製造方法中，基板例如係涵浸於石夕氟化氫酸之有機溶液、二氧化矽之凝膠粉末以及硼酸之有機溶液中。〆為讓本發明之上述目的、特徵和優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如V. Description of the invention (4) In the above-mentioned method for manufacturing the electrothermal film, the baking method of the planarizing material on the substrate is, for example, first placed at a temperature of 100 degrees Celsius, and the chess baking time is, for example, 3 °. Minutes, and then placed at a temperature of 500 degrees Celsius, for example, and the baking time is, for example, 30 minutes. In the above-mentioned manufacturing method of the electrothermal film, the substrate is, for example, immersed in an organic solution of fluorinated hydrofluoric acid, a gel powder of silicon dioxide, and an organic solution of boric acid. 〆 In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description such as

實施方式本發明之主要概念係在提供一種電熱膜之製作方法，其藉由涵浸的方式使基板之表面平坦化。依此製作方法所形成的電熱膜結構包括有兩種型態。以下將配合第1、2、 3圖做更進一步的說明。第1圖繪示為依照本發明一較佳實施例電熱膜之製造方法的流程圖’第2圖緣示為依照本發明一較佳實施例二層結構電熱膜之剖面示意圖。首先請參照第1、2圖，於步驟1 〇 0中，提供一基板2 0 0，此基板2 〇〇之材質例如是陶究、玻璃陶瓷等或其他適用的基板材質。Embodiments The main concept of the present invention is to provide a method for manufacturing an electrothermal film, which planarizes the surface of a substrate by immersion. The structure of the electrothermal film formed according to this manufacturing method includes two types. The following will be further explained in conjunction with Figures 1, 2, and 3. Fig. 1 shows a flow chart of a method for manufacturing an electric heating film according to a preferred embodiment of the present invention. 'Fig. 2 shows a schematic cross-sectional view of a two-layer electric heating film according to a preferred embodiment of the present invention. First, please refer to FIGS. 1 and 2. In step 100, a substrate 200 is provided. The material of the substrate 200 is ceramic, glass ceramic, or other suitable substrate materials.

接著，於步驟102中，對基板2〇〇進行一表面處理，使其表面平坦化’在基板2 0 〇所進行之表面處理，例如將基板2 0 〇涵浸於一平坦化材料2 0 2之二氧化矽之有機溶膠以及烷基矽酸鹽類之有機溶液中的其中之一，或者將基板2〇〇 ϋΐ 孩 1 ΰΚΐί,Next, in step 102, a surface treatment is performed on the substrate 2000 to planarize the surface. The surface treatment performed on the substrate 200 is, for example, immersing the substrate 200 in a planarizing material 2 02. Either one of an organic sol of silicon dioxide or an organic solution of an alkyl silicate, or a substrate of 200 ϋΐ 1 ΰΚΐί,

ll697twfl.ptd 第11頁 1232692 五、發明說明（5) 涵浸於一平坦化材料2 0 2之矽氟化氫酸之有機溶液、一— 化矽之凝膠粉末以及硼酸之有機溶液中，# / 〜氣 2 0 2之二氧化碎化合物以及烧基料鹽類化料一附著於基板200之表面。並烘烤基板2〇〇上之平坦、中< 2 0 2 ’而基板上之平坦化材料的烘烤方式例如特料攝氏1 0 0度的溫度當中，而其烘烤時間例如 ^八置在放置於例如係攝氏5 0 0度的溫度中，而其烘妹刀再 30分鐘，以使基板2 0 0表面藉由平坦化材料如為此外，在步驟1〇4與106中，於平坦而千棱化。形成第一導體層2 0 4以及第一絕緣展材抖2 0 2上依序法例如利用減:鍍的方法，依序鍍上9導犋的方一絕緣層2 0 6。其t，第一導體層2= ^^0^及第 2 0 2之上，第一絕緣層2 〇 6形成於 ^成於平坦化枒料外延伸至基板2 〇〇之上。此外，、第導體層2〇4之上教包括鈀/銀合金、銅/錳/鎳合金、導體層2 04之材質例銅合金、鎳/鉻/鋁/鐵合金、鎳/鎳/鉻合金、鎳/鉻/鉋/ 合金以及鈀/金/鐵合金等，這此人/鋁/矽合金、鎳/鉻/妈氧等成分來調整第一導體層2〇 ^ Ό金材質可藉由添加氮在本實施例中，若第一導、電阻值。一金，其鎳/鉻合金之比例例如$層2 0 4之材質包括鎳/鉻入。若第一導體層204之材質包:2〇及7 0 :30其中之—〇 2^6為之主姑要暂成：，鐵材質為添加成(鉻/鐵合金’ &鎳/鉻合 2^6之材質例如係氮化銘、氧化成刀。此外，第一絕緣層材料。蟑以及三氧化二鋁等陶瓷ll697twfl.ptd Page 111232692 V. Description of the invention (5) Immersion in an organic solution of silicon hydrofluoric acid, a silicon gel powder, and an organic solution of boric acid, # / ～ The oxidized pulverized compound of the gas 2 02 and the burned base salt-based material are attached to the surface of the substrate 200. And baking the flat, medium < 2 0 2 'on the substrate 200, and the baking method of the flattening material on the substrate is for example a temperature of 100 degrees Celsius, and the baking time is for example Place at a temperature of, for example, 500 degrees Celsius, and its baking knife for another 30 minutes, so that the surface of the substrate 200 is flattened by a flattening material. In addition, in steps 104 and 106, the surface is flat. And thousands of prisms. The first conductive layer 204 and the first insulating display material 202 are sequentially formed, for example, by a subtractive plating method, and a 9-conductor square insulating layer 206 is sequentially plated. At t, the first conductor layer 2 is equal to ^^ 0 ^ and the 202nd, and the first insulating layer 206 is formed on the substrate to extend beyond the planarization material to the substrate 2000. In addition, the first conductor layer 204 is made of palladium / silver alloy, copper / manganese / nickel alloy, material examples of the conductor layer 204, copper alloy, nickel / chromium / aluminum / iron alloy, nickel / nickel / chrome alloy, Nickel / chrome / planer / alloys, and palladium / gold / iron alloys, etc. This person / aluminum / silicon alloy, nickel / chromium / moxide, etc. can be used to adjust the first conductor layer. 2 ^ The gold material can be added by adding nitrogen in the In this embodiment, if the first conductance and the resistance value are used. For gold, the ratio of nickel / chromium alloys such as $ layer 204 is made of nickel / chromium. If the material package of the first conductor layer 204 is: 20 and 70:30, which is-○ 2 ^ 6, the main body should be temporarily formed, and the iron material is added (chrome / iron alloy '& nickel / chromium 2). The material of ^ 6 is, for example, nitrided oxide, oxidized into a knife. In addition, the material of the first insulation layer. Roach and ceramics such as alumina

1232692 五發明說明（6) 第3圖繪示為依照本發明另一較佳實施例四層結構電熱膜之剖面示意圖。首先請參照第1、3圖，在步驟丨〇 4、 ^ 6、108與110中，於平坦化材料20 2上依序形成第一導體層2 0 4、第一絕緣層2 〇 6、第二導體層2 0 8、第二絕緣層 0。、此形成鍍膜的方法例如利用濺鍍的方法，依序^上一導體層204以及第一絕緣層206、第二導體層2〇8、镇 :二緣：21〇。其中第一導體層2〇4形成於平坦化 ϋ，π« 緣層2 0 6形成於第一導體層2〇4之上，^ -導體層208形成於第一絕緣居 — 弟一等於第二導體層2 〇 8之上並^ ’苐二絕緣層2 1 〇形成此外，第一導體層2〇4與形成於基板200之上。 :合金、銅/猛/鎳合金、第鎳:2〇8之材質例如係把/ f鉻/鋁/鐵合金、錄/ ~ϋ 鎳/鉻/銘/銅來調整第-導體層20，心金材質可藉由添力Λ f合金以及鎳/鉻合金、鎳/鉻/鋁/石夕電/且值。虱或虱等成分在本實施例中，若楚合金、鎳/鉻/鐵八/ 材質例如係鎳/鉻合今，一導體層2 〇 4蛊〇金等組合。 7〇 : 30豆中之一 ' 其鎳/鉻合金之比禾二導體層2 0 8之材質例^係鎳/鉻/鑪若人第/導體層204與纟第例包括8〇 : 20及材質為添加成分。金，其鎳/鉻合金導體層2 0 8之之材質例如係氮化鋁、梟第一絕緣層2〇6鱼^要成分，鐵料。乳化鎂以及三梟 /、第二絕緣層2 1 0 一"K 化一 a 依照本發明之、以陶究材电，、、、螟製造方法的實貧&方式所示，其中1232692 V. Description of the invention (6) FIG. 3 is a schematic cross-sectional view of a four-layer electric heating film according to another preferred embodiment of the present invention. First, referring to FIGS. 1 and 3, in steps 1-4, ^ 6, 108, and 110, a first conductor layer 204, a first insulating layer 206, and Two conductor layers 208, and a second insulating layer 0. 2. This method for forming a coating film, for example, uses a sputtering method, and sequentially ^ the previous conductive layer 204, the first insulating layer 206, the second conductive layer 208, and the town: two edges: 21. The first conductor layer 204 is formed on the flattening layer, the π «edge layer 2 06 is formed on the first conductor layer 204, and the conductor layer 208 is formed on the first insulating layer. The second insulating layer 2 1 is formed on the conductive layer 208 and the second conductive layer 2 is formed on the substrate 200. : Alloy, copper / manganese / nickel alloy, nickel: The material of 208 is, for example, / f chrome / aluminum / iron alloy, recording / ~ ϋ nickel / chrome / ming / copper to adjust the first-conductor layer 20, the heart gold The material can be added by Δf alloy and nickel / chromium alloy, nickel / chromium / aluminum / lithium alloy. Ingredients such as lice or lice In this embodiment, Ruo Chu alloy, nickel / chromium / iron octadium / materials such as nickel / chromium alloy, a conductor layer of 2.04 gold, and the like are combined. One of the 70%: 30% of the nickel / chromium alloy ratio and the material examples of the conductor layer 208 are nickel / chromium / furnace / conductor layer 204 and 纟. Examples include 80:20 and Material is additive. The material of gold, the nickel / chromium alloy conductor layer 208 is, for example, aluminum nitride, the first insulating layer 206, the essential components, and iron. Emulsified magnesium and the third insulating layer 2 1 0 1 " K a 1 a according to the present invention, using ceramic materials, manufacturing methods, manufacturing methods, and the

1232692 五、發明說明（7) 涵浸製程可一次進行基板之正、反面平坦化，對於基板的正、反面皆須鍍製電熱膜有很大的優點，例如可將平坦化製程時間的縮短等。另外，涵浸製程可藉由控制涵浸時間的方式，精確地控制平坦化材料附著在基板上的厚度，當涵浸時間較長時，附著在基板上之平坦化材料的厚度越厚，反之亦然。相較於習知以印刷的方式將基板表面平坦化，印刷在基板上的二氧化錫厚度必須藉由印刷治具精準地控制方可印刷出均勻的膜厚，以獲得平坦之表面，而涵浸製程僅藉由控制涵浸時間的方式，就可獲得預期的平坦化效果，因此其可以節省許多成本。綜上所述，本發明之電熱膜製造方法至少具有下列優點： 1. 本發明之電熱膜製造方法將可使電熱膜的單位密度功率衰減率較低。 2. 本發明之電熱膜製造方法中，可藉由涵浸的方式同時對基板的正、反表面進行平坦化的處理，當製造者欲在基板的正、反表面鍍製電熱膜時，本發明之涵浸製程將可有效縮短製程的時間。 3 ·本發明之電熱膜製造方法中，可藉由控制涵浸時間的方法，精確地控制平坦化材料附著在基板上的厚度，毋須使用習知的印刷治具，就可獲得預期的平坦化效果。雖然本發明已以一較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精1232692 V. Description of the invention (7) The immersion immersion process can flatten the front and back of the substrate at one time. For both the front and back of the substrate, it is necessary to plate electrothermal film, which has great advantages, such as shortening the planarization process time, etc. . In addition, the immersion process can accurately control the thickness of the planarizing material attached to the substrate by controlling the immersion time. When the immersion time is longer, the thickness of the planarizing material attached to the substrate is thicker, and vice versa The same is true. Compared with the conventional method of flattening the substrate surface by printing, the thickness of tin dioxide printed on the substrate must be accurately controlled by a printing fixture to print a uniform film thickness to obtain a flat surface. The immersion process can obtain the desired flattening effect only by controlling the immersion time, so it can save a lot of costs. In summary, the manufacturing method of the electrothermal film of the present invention has at least the following advantages: 1. The manufacturing method of the electrothermal film of the present invention will enable the power density of the electrothermal film to be low. 2. In the manufacturing method of the electrothermal film of the present invention, the front and back surfaces of the substrate can be flattened simultaneously by immersion. When the manufacturer wants to plate the electrothermal film on the front and back surfaces of the substrate, the The immersion immersion process of the invention can effectively shorten the process time. 3 · In the manufacturing method of the electrothermal film of the present invention, the thickness of the planarizing material attached to the substrate can be accurately controlled by controlling the immersion time, and the expected planarization can be obtained without using a conventional printing jig. effect. Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in the art will not depart from the essence of the present invention.

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11697twfl.ptd 第15頁 1232692 圖式簡單說明第1圖繪示為依照本發明一較佳實施例電熱膜之製造方法的流程圖。第2圖繪示為依照本發明一較佳實施例二層結構電熱膜之剖面示意圖。第3圖繪示為依照本發明另一較佳實施例四層結構電熱膜之剖面示意圖。【圖式標示說明】 100 :提供一基板 1 0 2 :對基板進行一涵浸之表面處理，使其表面平坦化 104 於平坦化材料上形成第一導體層 106 於第一導體層上形成第一絕緣層 108 於第 _ 一絕緣層上形成第二導體層 110 於第二導體層上形成第二絕緣層 200 基板 202 平坦化材料 204 第導體層 206 第一絕緣層 208 第導體層 210 第 —二絕緣層11697twfl.ptd Page 15 1232692 Brief Description of Drawings Figure 1 shows a flowchart of a method for manufacturing an electric heating film according to a preferred embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a two-layer structure electric heating film according to a preferred embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a four-layer structure electric heating film according to another preferred embodiment of the present invention. [Illustration of diagrammatic labeling] 100: Provide a substrate 1 02: Surface treatment of the substrate by immersion to flatten the surface 104 Form a first conductor layer on a planarizing material 106 Form a first conductor layer on the first conductor layer An insulation layer 108 forms a second conductor layer 110 on the first insulation layer 110 forms a second insulation layer 200 on the second conductor layer 200 a substrate 202 a planarizing material 204 a conductor layer 206 a first insulation layer 208 a conductor layer 210 a— Two insulation layers

11697twfl.ptd 第16頁11697twfl.ptd Page 16

Claims

1232692 六、申請專利範圍 1 · 一種電熱膜的製作方法，至少包括：提供一基板；將該基板涵浸於一平坦化材料之溶液中，使該平坦化材料附著於該基板之表面；烘烤該基板上之該平坦化材料，以使該基板表面藉由該平坦化材料而平坦化；以及於該基板上依序形成一第一導體層以及一第一絕緣層，其中該第一導體層形成於該基板之上，而該第一絕緣層形成於該第一導體層之上並向外延伸至該基板之上。 2 ·如申請專利範圍第1項所述之電熱膜的製作方法，其中該基板係涵浸於二氧化矽之之有機溶膠中。 3. 如申請專利範圍第1項所述之電熱膜的製作方法，其中該基板係涵浸於烷基矽酸鹽類之有機溶液中。 4. 如申請專利範圍第1項所述之電熱膜的製作方法，其中該基板係涵浸於矽氟化氫酸之有機溶液、二氧化矽之凝膠粉末以及硼酸之有機溶液中。 5 .如申請專利範圍第1項所述之電熱膜的製作方法，其中該基板上之該平坦化材料係於攝氏1 0 0度的溫度之下進行烘烤。 6.如申請專利範圍第5項所述之電熱膜的製作方法，其中該基板上之該平坦化材料係持續烘烤3 0分鐘。 7 ·如申請專利範圍第6項所述之電熱膜的製作方法，在該基板上之該平坦化材料於攝氏1 0 0度的溫度之下持續烘烤3 0分鐘之後，更包括對該基板上之該平坦化材料進行1232692 VI. Application Patent Scope 1. A method for making an electrothermal film, at least including: providing a substrate; immersing the substrate in a solution of a planarizing material, and attaching the planarizing material to the surface of the substrate; baking The planarizing material on the substrate to planarize the substrate surface by the planarizing material; and sequentially forming a first conductor layer and a first insulating layer on the substrate, wherein the first conductor layer It is formed on the substrate, and the first insulating layer is formed on the first conductor layer and extends outwardly onto the substrate. 2. The manufacturing method of the electrothermal film according to item 1 of the scope of patent application, wherein the substrate is immersed in an organic sol of silicon dioxide. 3. The manufacturing method of the electrothermal film according to item 1 of the scope of patent application, wherein the substrate is immersed in an organic solution of an alkyl silicate. 4. The manufacturing method of the electrothermal film according to item 1 of the scope of the patent application, wherein the substrate is immersed in an organic solution of hydrofluoric acid, a gel powder of silicon dioxide, and an organic solution of boric acid. 5. The manufacturing method of the electrothermal film according to item 1 of the scope of patent application, wherein the planarizing material on the substrate is baked at a temperature of 100 degrees Celsius. 6. The manufacturing method of the electrothermal film according to item 5 of the scope of patent application, wherein the planarizing material on the substrate is continuously baked for 30 minutes. 7. The manufacturing method of the electrothermal film according to item 6 of the scope of the patent application, after the flattening material on the substrate is baked at 100 degrees Celsius for 30 minutes, the method further includes the substrate. On this flattening material

11697twf1.ptd 第17頁 1232692 六、申請專利範圍烘烤，其烘烤溫度係攝氏5 0 0度。 8 ·如申請專利範圍第7項所述之電熱膜的製作方法，其中當烘烤溫度為攝氏5 0 0度時，該基板上之該平坦化材料係持續烘烤3 0分鐘。 9.如申請專利範圍第1項所述之電熱膜的製作方法，其中該基板之材質包括陶瓷材料、玻璃陶瓷複合材料之其中之一。 1 0 .如申請專利範圍第1項所述之電熱膜的製作方法，其中該第一導體層之材質包括鎳/鉻合金，其鎳/鉻合金之比例為8 0 : 2 0及7 0 : 3 0其中之一。 1 1 .如申請專利範圍第1項所述之電熱膜的製作方法，其中該第一導體層之材質包括鈀/銀合金、銅/錳/鎳合金、鎳/鉻/鋁/銅合金、鎳/鉻/鋁/鐵合金、鎳/鉻/鋁/矽合金以及妃/金/鐵合金。 1 2 .如申請專利範圍第1項所述之電熱膜的製作方法，其中該第一導體層之材質包括鎳/鉻/鐵合金，其鎳/鉻合金為主要成分，鐵材質為添加成分。 1 3.如申請專利範圍第1項所述之電熱膜的製作方法，其中該第一絕緣層之材質包括氮化鋁、氧化鎂以及三氧化二鋁其中之一。 1 4. 一種電熱膜的製作方法，至少包括：提供一基板；將該基板涵浸於一平坦化材料之溶液中，使該平坦化材料附著於該基板之表面；11697twf1.ptd Page 17 1232692 6. Scope of patent application For baking, the baking temperature is 50 ° C. 8. The manufacturing method of the electrothermal film according to item 7 of the scope of patent application, wherein when the baking temperature is 500 degrees Celsius, the flattening material on the substrate is continuously baked for 30 minutes. 9. The manufacturing method of the electrothermal film according to item 1 of the scope of patent application, wherein the material of the substrate includes one of a ceramic material and a glass-ceramic composite material. 10. The method for manufacturing an electric heating film according to item 1 of the scope of the patent application, wherein the material of the first conductor layer includes nickel / chromium alloy, and the ratio of nickel / chromium alloy is 80: 2 0 and 70: One of 3 0. 1 1. The manufacturing method of the electrothermal film according to item 1 of the scope of patent application, wherein the material of the first conductor layer includes palladium / silver alloy, copper / manganese / nickel alloy, nickel / chromium / aluminum / copper alloy, nickel / Chrome / aluminum / iron alloy, nickel / chrome / aluminum / silicon alloy, and princess / gold / iron alloy. 12. The manufacturing method of the electrothermal film according to item 1 of the scope of the patent application, wherein the material of the first conductor layer includes nickel / chromium / iron alloy, with nickel / chromium alloy as the main component and iron material as the additive component. 1 3. The manufacturing method of the electrothermal film according to item 1 of the scope of patent application, wherein the material of the first insulating layer includes one of aluminum nitride, magnesium oxide, and aluminum oxide. 1 4. A method for manufacturing an electrothermal film, at least comprising: providing a substrate; immersing the substrate in a solution of a planarizing material, and attaching the planarizing material to a surface of the substrate;

11697twfl.ptd 第18頁 1232692 六、申請專利範圍烘烤該基材上之該平坦化材料，以使該基板表面藉由該平坦化材料而平坦化；以及於該基板上依序形成一第一導體層、一第一絕緣層、一第二導體層以及一第二絕緣層，其中該第一導體層形成於該基板之上，該第一絕緣層形成於該第一導體層之上，該第二導體層形成於該第一絕緣層之上，該第二絕緣層形成於該第二導體層之上並向外延伸及形成於該基板之上。 1 5 .如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該基板係涵浸於二氧化石夕之有機溶膠中。 1 6 .如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該基板係涵浸於烷基矽酸鹽類之有機溶液中。 1 7.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該基板係涵浸於矽氟化氫酸之有機溶液、二氧化矽之凝膠粉末以及硼酸之有機溶液中。 1 8.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該基板上之該平坦化材料係於攝氏1 0 0度的溫度之下進行烘烤。 1 9.如申請專利範圍第1 8項所述之電熱膜的製作方法，其中該基板上之該平坦化材料係持續烘烤3 0分鐘。 2 0 .如申請專利範圍第1 9項所述之電熱膜的製作方法，在該基板上之該平坦化材料於攝氏1 0 0度的溫度之下持續烘烤3 0分鐘之後，更包括對該基板上之該平坦化材料進行烘烤，其烘烤温度係攝氏5 0 0度。 2 1 .如申請專利範圍第2 0項所述之電熱膜的製作方11697twfl.ptd Page 18 1232692 6. Apply for a patent scope Bake the planarization material on the substrate so that the substrate surface is planarized by the planarization material; and sequentially form a first on the substrate A conductor layer, a first insulation layer, a second conductor layer, and a second insulation layer, wherein the first conductor layer is formed on the substrate, the first insulation layer is formed on the first conductor layer, A second conductor layer is formed on the first insulation layer, and the second insulation layer is formed on the second conductor layer and extends outward and is formed on the substrate. 15. The method for manufacturing an electrothermal film according to item 14 of the scope of the patent application, wherein the substrate is immersed in an organic sol of dioxide. 16. The method for producing an electrothermal film according to item 14 of the scope of the patent application, wherein the substrate is immersed in an organic solution of an alkyl silicate. 1 7. The method for producing an electrothermal film according to item 14 of the scope of the patent application, wherein the substrate is immersed in an organic solution of hydrofluoric acid, a gel powder of silicon dioxide, and an organic solution of boric acid. 1 8. The method for manufacturing an electrothermal film according to item 14 of the scope of patent application, wherein the planarizing material on the substrate is baked at a temperature of 100 ° C. 19. The method for manufacturing an electrothermal film according to item 18 of the scope of the patent application, wherein the planarizing material on the substrate is continuously baked for 30 minutes. 20. The method for manufacturing an electrothermal film as described in item 19 of the scope of patent application, after the flattening material on the substrate is continuously baked at 100 degrees Celsius for 30 minutes, the method further includes The planarization material on the substrate is baked, and the baking temperature is 500 degrees Celsius. 2 1. The manufacturer of the electrothermal film as described in item 20 of the scope of patent application

11697twf1.ptd 第19頁 1232692 六、申請專利範圍法，其中當烘烤溫度為攝氏5 0 0度時，該基板上之該平坦化材料係持續烘烤3 0分鐘。 2 2.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該基板之材質包括陶瓷材料、玻璃陶瓷複合材料之其中之一。 2 3.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第一導體層之材質包括鎳/鉻合金，其鎳/鉻合金之比例為8 0 ·· 2 0及7 0 : 3 0其中之一。 2 4.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第二導體層之材質包括鎳/鉻合金，其鎳/鉻合金之比例為8 0 ·· 2 0及7 0 : 3 0其中之一。 2 5.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第一導體層之材質包括鈀/銀合金、銅/錳/鎳合金、鎳/鉻/鋁/銅合金、鎳/鉻/鋁/鐵合金、鎳/鉻/鋁/ 石夕合金以及纪/金/鐵合金。 2 6 .如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第二導體層之材質包括鈀/銀合金、銅/錳/鎳合金、鎳/鉻/鋁/銅合金、鎳/鉻/鋁/鐵合金、鎳/鉻/鋁/ 矽合金以及鈀/金/鐵合金。 2 7.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第一導體層之材質包括鎳/鉻/鐵合金，其鎳/ 絡合金為主要成分’鐵材質為添加成分。 2 8.如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第二導體層之材質包括鎳/鉻/鐵合金，其鎳/11697twf1.ptd Page 19 1232692 6. Method of applying for a patent, wherein when the baking temperature is 500 degrees Celsius, the flattening material on the substrate is continuously baked for 30 minutes. 2 2. The manufacturing method of the electrothermal film according to item 14 of the scope of the patent application, wherein the material of the substrate includes one of a ceramic material and a glass-ceramic composite material. 2 3. The manufacturing method of the electrothermal film according to item 14 of the scope of the patent application, wherein the material of the first conductor layer includes nickel / chromium alloy, and the ratio of nickel / chromium alloy is 8 0 ·· 2 0 and 7 0: One of 3 0. 2 4. The manufacturing method of the electrothermal film according to item 14 of the scope of the patent application, wherein the material of the second conductor layer includes nickel / chromium alloy, and the ratio of nickel / chromium alloy is 8 0 ·· 2 0 and 7 0: One of 3 0. 2 5. The manufacturing method of the electrothermal film according to item 14 of the scope of the patent application, wherein the material of the first conductor layer includes palladium / silver alloy, copper / manganese / nickel alloy, nickel / chromium / aluminum / copper alloy, Nickel / chrome / aluminum / iron alloy, nickel / chromium / aluminum / shixi alloy and ki / gold / iron alloy. 26. The manufacturing method of the electrothermal film according to item 14 of the scope of the patent application, wherein the material of the second conductor layer includes palladium / silver alloy, copper / manganese / nickel alloy, nickel / chromium / aluminum / copper alloy, Nickel / chrome / aluminum / iron alloys, nickel / chrome / aluminum / silicon alloys, and palladium / gold / iron alloys. 2 7. The method for manufacturing an electrothermal film according to item 14 of the scope of the patent application, wherein the material of the first conductor layer includes nickel / chromium / iron alloy, and nickel / complex alloy is the main component; iron material is the additive component. 2 8. The manufacturing method of the electrothermal film according to item 14 of the scope of patent application, wherein the material of the second conductor layer includes nickel / chromium / iron alloy, and its nickel /

11697twf1.ptd 第20頁 1232692 六、申請專利範圍鉻合金為主要成分，鐵材質為添加成分。 2 9 .如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第一絕緣層之材質包括氮化鋁、氧化鎂以及三氧化二鋁其中之一。 3 〇 .如申請專利範圍第1 4項所述之電熱膜的製作方法，其中該第二絕緣層之材質包括氮化鋁、氧化鎂以及三氧化二鋁其中之一。11697twf1.ptd Page 20 1232692 6. Scope of patent application Chrome alloy is the main component and iron material is the additive component. 29. The method for manufacturing an electrothermal film according to item 14 of the scope of patent application, wherein the material of the first insulating layer includes one of aluminum nitride, magnesium oxide, and aluminum oxide. 30. The manufacturing method of the electrothermal film according to item 14 of the scope of the patent application, wherein the material of the second insulating layer includes one of aluminum nitride, magnesium oxide, and aluminum oxide.

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