TWI230996B

TWI230996B - Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters

Info

Publication number: TWI230996B
Application number: TW092118067A
Authority: TW
Inventors: Richard Parsons
Original assignee: Tokyo Electron Ltd
Priority date: 2002-07-03
Filing date: 2003-07-02
Publication date: 2005-04-11
Also published as: TW200409262A; US20050145334A1; AU2003281421A1; JP2005531913A; CN1666315A; WO2004006285A1

Abstract

A RF sensor for sensing and analyzing parameters of plasma processing. The RF sensor is provided with a plasma processing tool and an antenna for receiving RF energy radiated from the plasma processing tool. The antenna is located proximate to the plasma processing tool so as to be non-invasive. Additionally, the RF sensor may be configured for wideband reception of multiple harmonics of the RF energy that is radiated from the plasma processing tool. Further, the RF sensor may be coupled to a high pass filter and a processor for processing the received RF energy. Additionally, the antenna may be located within an enclosure with absorbers to reduce the interference experienced by the RF sensor. Additionally, a tool control may be coupled to the processor to provided to adjust and maintain various parameters of plasma processing according to the information provided by the received RF energy.

Description

1230996 五、發明說明（1) 一、【發明所屬之技術領域】本發明係關於電漿處理工具，尤有關於一電漿處理工具之參數之非侵入性量測及分析。電電路、钱刻及常，電漿；一體；及含，一子使得上名虫刻加速離為統使用常，在數或置先前技漿處理顯示器層沈積漿處理系^區^ 一電源夾頭，該離子或形成子或可了確保一感測此等系於腔室術】系統係大量及或其他電兩者上皆有系統之基本連接至一真，用於在腔用於支持晶會以一欲達一沈積層。另外使用一可產生一精器來監控以統中’該感中之連接至應用於材料子設備之處使用，例如構件包含_ 空埠，用：室中形成電圓；及一電到之能量撞該用於產生電源。確的晶圓，決定電鞔處測器係置於一電極之傳處理及半導理及製造， ’半導體晶脸室，於其注入及排出黎。额外的綠’用於加擊晶圓表面電漿之電源通$ ’該電理系統之狀電默令以監輪線中。體、積體在基板上圓。通中產生電處理氣構件可包速電漿離以在晶圓亦可用於漿處理系況。通控某些參 S、【發明内容】本發明之提供一用於穎之方法及設備。一RF感測器，用於感測電漿處電聚製程參數之量測及分析之新之，具有一電漿 1230996 五，發明說明（2) 處理工具及一天線’用於接收從電襞處理工具放射出之RF 能量。該天線係位於緊臨於電漿處理工具處故為非侵入性。該天線可為一寬帶單極天線。在本發明之一方面，一 RF感測器可連接至一處理器，包含一高通濾波器；一放大器及一資料處理裝置。此外，該資料處理裝置可連接至一使用者介面以受使用者控制或亦町連接至一網路以容許遠端存取該資料處理裝置。四、【實施方式】本發明將參照實施例做更詳細的說明。圖1係顯示依照本發明之一實施例之RF感測器。一電漿處理工具’包含一腔室110。該電漿處理工具通常係由一RF電源（未圖示）供給能量。來自RF電源之RF能量12〇於通常使用於處理基板之電漿處理工具之腔室11〇中產生及維持一電漿1 3 0。該電漿處理工具可被組合成任何已知之組態，每一種組態都包含一腔室丨丨〇，於其中存在電漿i 3 〇以供處理。某些此等組態包含，例如，一感應麵合電聚 (ICP)源，一靜電隔離之無線電頻率（ESRF)電漿源，一轉換耦合電浆（TCP)源，及一電容耦合之電漿（CCP)源。不管 RF能量之來源為何，在腔室11〇中之電漿13〇被RF電源產生之RF能量活化。因此，RF能量從腔室丨丨〇以基礎RF頻率及基^RF頻率之諧波放射。該諧波頻率在電漿13〇中產生。 j諸波頻率之大小及相位提供電漿丨3〇及腔室丨丨〇之狀態的資訊。例如，以不同的能量、壓力及流率之實驗顯示&射 1230996 五、發明說明（3) 之能量及製程參數間高度的相關性。特別是，分析顯示一次及二次譜波與電漿之電子密度有9 以上之符合性。在腔室110之外部設有一天線14〇，用於接收從電漿 130放射出之RF能量且將該RF能量轉換成一RF信號。在圖j 中’天線1 4 0係位於腔室11 〇之外。可選擇地，其亦可位於腔室11 0之内，但位於電漿；[3 〇之處理區域之外。在此組態中’天線具有非侵入電漿1 3 〇之優點，原因在於侵入性之感測器會改變製程參數。天線丨4〇係連接至處理器15〇。該處理器150從天線140接收RF信號且因此被用於處理該rf信號以知供想要之電漿狀態資訊。此外，由於能量源之基礎頻率可能為兆赫等級，該天線丨4〇可為寬帶單極天線，以具有接收大頻寬之放射出之RF能量之能力。例如，天線探究模組RAM-220可做為寬帶單極天線使用。圖2係依照本發明之一實施例之天線及處理器之簡化之方塊圖。在例示之實施例中，天線丨4〇係連接至高通濾波器210。可選擇地，天線14〇可連接至其他型式之濾波器’例如一帶濾、帶通或低通濾波器。高通濾波器2丨〇之輸出被連接至一低雜訊放大器（LNA ) 220且該放大之信號接著被輸入處理器2 3 0。該高通濾波器可用於將基礎頻率從接收之信號中移除，原因在於通常有用之資訊並未包含在基礎頻率中，而是包含在RF能量之諧波中。當然，關於基礎頻率之資料可藉由消除或調整高通濾波器2丨〇之截切頻率而收集。在高通濾波器之截切頻率以下之信號衰減通常在40dB之範圍。該LNA220將高通濾波器提供之RF信號放大1230996 V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention relates to the non-invasive measurement and analysis of the parameters of a plasma processing tool, and particularly to the parameters of a plasma processing tool. The electric circuit, the money carving and the constant plasma, the integrated; and the one, which makes the above-mentioned insect engraving accelerated separation is commonly used, the number of the previous technology plasma processing display layer deposition slurry processing system ^ area ^ a power clip Head, the ions or protons may ensure that a sensing system is connected to the chamber.] The system is a large number and / or other electrical systems with a basic connection to a true for the cavity to support the crystal. A layer of sediment will be formed. In addition, a precise device can be used to monitor and control the system. The connection in the sense is applied to the material sub-equipment. For example, the component contains an air port, which is used to: form an electric circle in the room; and an electric energy This should be used to generate power. The exact wafer determines that the electrical detector is placed in an electrode for processing, semiconductor processing, and manufacturing, and the semiconductor crystal chamber is filled and discharged. The extra green 'is used to attack the surface of the wafer. The power supply of the plasma is passed through to the state of the electrical system. The volume and the volume are round on the substrate. Electrical processing gas is generated during the process, and components can be plasma-separated so that wafers can also be used for plasma processing. General control of certain parameters. [Summary of the Invention] The present invention provides a method and equipment for Ying. An RF sensor is used to measure and analyze the parameters of the electropolymerization process at the plasma. It has a plasma 1230996 V. Description of the invention (2) a processing tool and an antenna 'for receiving the slave RF energy emitted by processing tools. The antenna is located near the plasma processing tool and is non-invasive. The antenna may be a wideband monopole antenna. In one aspect of the present invention, an RF sensor can be connected to a processor, including a high-pass filter, an amplifier, and a data processing device. In addition, the data processing device may be connected to a user interface to be controlled by the user or to a network to allow remote access to the data processing device. Fourth, the embodiment The present invention will be described in more detail with reference to the embodiment. FIG. 1 shows an RF sensor according to an embodiment of the present invention. A plasma processing tool 'includes a chamber 110. The plasma processing tool is usually powered by an RF power source (not shown). RF energy from the RF power source 120 generates and maintains a plasma 130 in a chamber 11 of a plasma processing tool typically used for processing substrates. The plasma processing tool can be combined into any known configuration, and each configuration includes a chamber 丨丨 0 in which a plasma i 3 〇 is present for processing. Some of these configurations include, for example, an inductive surface-coupled electropolymer (ICP) source, an electrostatically isolated radio frequency (ESRF) plasma source, a conversion coupled plasma (TCP) source, and a capacitively coupled electric Pulp (CCP) source. Regardless of the source of the RF energy, the plasma 13 in the chamber 11 is activated by the RF energy generated by the RF power source. Therefore, RF energy is radiated from the cavity at harmonics of the fundamental RF frequency and the fundamental RF frequency. This harmonic frequency is generated in the plasma 130. The magnitude and phase of the j-wave frequencies provide information on the state of the plasma 丨 30 and the cavity 丨丨〇. For example, experiments with different energies, pressures, and flow rates show & shoot 1230996 V. Description of the invention (3) There is a high correlation between the energies and process parameters. In particular, the analysis shows that the primary and secondary spectral waves agree with the electron density of the plasma of 9 or more. An antenna 14 is provided outside the chamber 110 for receiving RF energy radiated from the plasma 130 and converting the RF energy into an RF signal. In Figure j, the 'antenna 1 40' is located outside the chamber 11 0. Alternatively, it can also be located within the chamber 110, but located outside the plasma; [30] outside the processing area. In this configuration, the 'antenna has the advantage of non-intrusive plasma 130, because the intrusive sensor changes the process parameters. The antenna 4o is connected to the processor 15o. The processor 150 receives the RF signal from the antenna 140 and is therefore used to process the rf signal to know the desired plasma status information. In addition, since the fundamental frequency of the energy source may be in the megahertz range, the antenna may be a wideband monopole antenna to have the ability to receive RF energy radiated from large bandwidths. For example, the antenna exploration module RAM-220 can be used as a broadband monopole antenna. FIG. 2 is a simplified block diagram of an antenna and a processor according to an embodiment of the present invention. In the illustrated embodiment, the antenna 40 is connected to the high-pass filter 210. Alternatively, the antenna 14 can be connected to other types of filters' such as a band filter, band pass or low pass filter. The output of the high-pass filter 20 is connected to a low noise amplifier (LNA) 220 and the amplified signal is then input to the processor 230. The high-pass filter can be used to remove the fundamental frequency from the received signal because the information that is usually useful is not included in the fundamental frequency, but is included in the harmonics of the RF energy. Of course, information about the fundamental frequency can be collected by eliminating or adjusting the cut-off frequency of the high-pass filter 2 丨 0. Signal attenuation below the cut-off frequency of the high-pass filter is usually in the range of 40dB. The LNA220 amplifies the RF signal provided by the high-pass filter

第8頁 1230996 五、發明說明（4) 使得其可被處理器230適當地處理。典型之LNA之增益值範圍可為20_30dB。處理器230可設計成支援多輸入，如圖2所示。在此狀況中，數個製程可被獨立監視且由一單一處理器230處理。該處理器230可包含一類比至數位（A/D)轉換器以將接收之類比信號轉換成數位信號。該信號之取樣速率可由各種不同的方法來決定。例如，假如RF能量之基礎頻率為 13·56ΜΗζ，那麼125MHz之帶寬適合於量測8諧波（8次諧波具有122· 04 MHz之頻率）。在此狀況下，假如A/D轉換器之取樣頻率係100ms且ΙΟΚΗζ之頻率箱被選擇，該取樣頻率以 NyQiiist準則計算至少為250MS/S且取樣大小為25000。連接至處理斋230的為一使用者介面240、一外部電腦 250及一網路260。該使用者介面24〇可包含各種已知之構件，目的為容許使用者與處理器23 〇溝通。例如，在取樣以後，假如該處理器對取樣之資料執行一FFT(快速富利’葉轉換），其結果可顯示在一容許使用者存取該系統之觸控、面板上。該外部電腦250可提供各種目的包含即時腔室Π0控制。該網路26〇容許使用者在遠端存取該處理益三例如’FFT資訊可被外部電腦25〇或網路26〇存取。 &在此等天線及處理器之例子中，腔室參數可狀態時被特性化且藉由夭蟪1 4 n >隹板丰 T况π丨土…儿稽田大綠丨4 〇收集之相關於腔室及電漿之各種參數槿被k供、、、。一住令數t模組。例如，苴包含電子密度、組合之潔淨度、電子m =多等模組之使用可容許使用不需考詹^ 、、、； ^偵測。此而可應、、、邑對杈準之天線，其可Page 8 1230996 V. Description of the invention (4) so that it can be appropriately processed by the processor 230. The gain range of a typical LNA can be 20_30dB. The processor 230 may be designed to support multiple inputs, as shown in FIG. 2. In this case, several processes can be independently monitored and processed by a single processor 230. The processor 230 may include an analog-to-digital (A / D) converter to convert a received analog signal into a digital signal. The sampling rate of this signal can be determined by various methods. For example, if the fundamental frequency of RF energy is 13.56 MHz, then a bandwidth of 125 MHz is suitable for measuring 8 harmonics (the 8th harmonic has a frequency of 122.04 MHz). In this case, if the sampling frequency of the A / D converter is 100ms and a frequency box of 10KΗζ is selected, the sampling frequency is calculated to be at least 250MS / S and the sampling size is 25000 according to the NyQiiist criterion. Connected to the processing unit 230 is a user interface 240, an external computer 250, and a network 260. The user interface 24 may include various known components for the purpose of allowing the user to communicate with the processor 23. For example, after sampling, if the processor performs an FFT (Fast Fourier transform) on the sampled data, the results can be displayed on a touch panel that allows the user to access the system. The external computer 250 can provide various purposes including instant chamber UI0 control. The network 26o allows users to remotely access the processing benefits. For example, the 'FFT information can be accessed by an external computer 25 or the network 26o. & In the examples of these antennas and processors, the chamber parameters can be characterized when they are stateable and collected by 夭蟪 1 4 n > 隹板丰 TTπ 丨土 ... 儿儿田大绿丨 4 〇 Various parameters related to the chamber and plasma are provided. A residence order number t module. For example, the use of 苴 modules that include electron density, combined cleanliness, and electron m = multiple can allow use without testing ^, ,,; ^ detection. Therefore, antennas that can be aligned with

1230996 五、發明說明（5) 簡化感測器設計參數。圖3係依照本發明之一實施例之天線之簡化之方塊圖。腔至110、電楽:130、天線140及處理器150可與圖j及2 所揭示的相同。天線140係置於一封閉牆34〇中，其係經由連接牆3 1 0連接至腔室1 1 〇。該連接牆3 1 〇係設計成使電浆 130玫射出之RF能量通過，其可為石英、氧化鋁或任何其他合適之材料。可選擇地，在連接牆310中可提供一孔以容許RF能量從其中穿過。吸收器3 2 0及330係用於吸收來自無用之來源之RF能量同時減少因封閉牆34〇之共振產生之失真，即，缺少吸收器320及330，天線可能接收到無用之共振’使得應被接收之信號失真。通常，吸收器可包含以分別的或寬帶之頻率吸收能量之材料。雖然圖示中吸收器320及330係在封閉牆340之後，但吸收器320及330亦可置於封閉牆34 0之5個側面上（假如該封閉牆為一矩形盒）。當吸收器320及330配置於矩形盒之其他的5個側面上時，吸收器以此法配置可容許rf能量從電漿1 3 0經由連接牆31 0放射到封閉牆。在實施例中，吸收器320及33 0可被選擇使得吸收器 320係吸收基礎頻率且吸收器330係吸收一次諧波。一四分之一波形之配置可提供選擇之頻率之最大衰減。此外，額外的吸收層可被使用。雖然前文中說明了特定的吸收器之配置，但任何可降低干擾之吸收器配置組態都可以使用。圖4係依照本發明之一實施例之電漿處理系統之簡化之方塊圖。為了說明，腔室110被顯示成一電容耦合之腔1230996 V. Description of the invention (5) Simplified sensor design parameters. FIG. 3 is a simplified block diagram of an antenna according to an embodiment of the present invention. The cavity to 110, the antenna: 130, the antenna 140, and the processor 150 may be the same as those disclosed in FIGS. The antenna 140 is placed in a closed wall 34o, which is connected to the chamber 11 through a connecting wall 310. The connecting wall 3 10 is designed to pass RF energy emitted by the plasma 130 rose, which may be quartz, alumina, or any other suitable material. Alternatively, a hole may be provided in the connecting wall 310 to allow RF energy to pass therethrough. Absorbers 3 2 0 and 330 are used to absorb RF energy from useless sources while reducing distortion caused by the resonance of the enclosed wall 34. That is, without absorbers 320 and 330, the antenna may receive useless resonances, making it suitable for applications. The received signal is distorted. Generally, the absorber may include materials that absorb energy at separate or broadband frequencies. Although the absorbers 320 and 330 are shown behind the closed wall 340 in the figure, the absorbers 320 and 330 can also be placed on 5 sides of the closed wall 340 (assuming that the closed wall is a rectangular box). When the absorbers 320 and 330 are arranged on the other five sides of the rectangular box, the absorbers are arranged in this way to allow rf energy to be radiated from the plasma 130 to the closed wall through the connecting wall 3130. In an embodiment, the absorbers 320 and 330 may be selected such that the absorber 320 is absorbing the fundamental frequency and the absorber 330 is absorbing the first harmonic. A quarter waveform configuration provides the maximum attenuation of the selected frequency. In addition, additional absorbing layers can be used. Although specific absorber configurations have been described in the previous section, any absorber configuration that reduces interference can be used. Fig. 4 is a simplified block diagram of a plasma processing system according to an embodiment of the present invention. For illustration, the chamber 110 is shown as a capacitively coupled cavity

第10頁 1230996 五、發明說明（6)Page 10 1230996 V. Description of the invention (6)

室，具有上電極1 2 5，然而，任何型式之系統可以同樣地使用。該電漿130，該天線140及該處理器150可與前文所述相同。如前所述，電漿130係被RF產生器420所激發。該 RF產生器420可直接耦合至腔室11〇，或，如圖所示，經由一配合網路4 10或440耦合至腔室11〇。在圖4中，兩個RF產生器係為了例示而顯示，然而，依腔室11 〇之組態而定，亦可使用單一 RF產生器420。該上電極（UEL)配合網路4 10 係連接至上電極125且該下電極（LEL)配合網路440係連接至下電極450。電漿130係被RF產生器420激發。因此，電漿1 3 0以一基礎頻率及該基礎頻率之諧波放射r jr能量。該 RF能量係放射至腔室11〇外且被天線14〇接收，該天線14〇係位於電漿1 3 0之外。該天線1 4 〇係連接至一處理器1 5 〇，在前文中曾做部分說明。如配合圖1所做之說明，前述之配置提供一非侵入性之接收電漿處理參數之方法。The chamber has an upper electrode 1 2 5; however, any type of system can be used in the same way. The plasma 130, the antenna 140, and the processor 150 may be the same as described above. As mentioned above, the plasma 130 is excited by the RF generator 420. The RF generator 420 may be directly coupled to the chamber 110, or, as shown, coupled to the chamber 11 via a mating network 4 10 or 440. In FIG. 4, two RF generators are shown for illustration, however, depending on the configuration of the chamber 110, a single RF generator 420 may be used. The upper electrode (UEL) mating network 4 10 series is connected to the upper electrode 125 and the lower electrode (LEL) mating network 440 series is connected to the lower electrode 450. The plasma 130 is excited by the RF generator 420. Therefore, the plasma 130 emits r jr energy at a fundamental frequency and harmonics of the fundamental frequency. The RF energy is radiated to the outside of the chamber 110 and is received by the antenna 140, which is located outside the plasma 130. The antenna 140 is connected to a processor 150, which has been partially explained in the foregoing. As described in conjunction with Figure 1, the aforementioned configuration provides a non-invasive method for receiving plasma processing parameters.

處理器150接收RF能量且經由一類比至數位（A/D)轉換裔將類比信號轉換成數位信號。通常，類比信號之取樣速 $取決於所關注之頻寬（即，頻寬是所關注之基礎頻率及谐波之函數）。例如，5〇〇mHz之頻寬通常用每秒10億次之頻1來取樣。當然，取樣頻率可如所述般決定且不應侷限於則例。RF能量之大小及相位，包含諧波，可提供電漿 0之狀態之資訊且因此提供腔室丨丨〇之狀態資訊。該資料可接著被處理器150處理且如快速富利葉轉換（FFT)及主要 f件分析（PCA)等運算可通常被使用於收集來自RF信號之二貝訊。處理器1 5 〇所專得到之資訊可提供對參數之了解，The processor 150 receives the RF energy and converts the analog signal into a digital signal via an analog-to-digital (A / D) converter. In general, the sampling rate of an analog signal depends on the bandwidth of interest (ie, the bandwidth is a function of the fundamental frequency and harmonics of interest). For example, a bandwidth of 500 mHz is typically sampled at a frequency of 1 billion times per second. Of course, the sampling frequency can be determined as described and should not be limited to the examples. The magnitude and phase of RF energy, including harmonics, can provide information on the state of plasma 0 and therefore the state information of the chamber 丨丨〇. This data can then be processed by the processor 150 and operations such as fast Fourier transform (FFT) and principal f-piece analysis (PCA) can often be used to collect the second signal from the RF signal. The information obtained by the processor 150 can provide an understanding of the parameters,

1230996 五、發明說明（7) 例如，件之潔靜度，電漿密度，電子溫度及終端债測。使用值ί Ϊ器之一實施例中，接收之叩能量之軌跡資料可波：Ϊ Ϊ技術’包含FFT，而轉換成頻域輸出信號。諧正時拉訊可接著被取出且被乘以一在電漿處理***校可將:旦Α所決定之係數。PCA有益於決定係數，因為其資料旦ΐ Ϊ相關值之集合轉換成較小量的主要值之集合。、 (_大二Ϊ ί可藉由將原始資料值集合轉換成新的原始乂、）集曰之未修正之線性組合來達成。 ^用接收iRF能量之基礎頻率及諧波頻率之大小分Z。： Ϊ :之分析，包含能量分析，流量分析，及壓力 :間有ί大：得到之資訊，尚可決定在那個譜 _ ^ ^ y ^生存在且因此，決定每一個頻率成分夕 l Μ ^ ^係數。相依分析亦可決定假如改變一參數合^自系統^他參數 '然而，初始結果顯示參數可；；二響出，可明顯地看可ί現1端偵測。一旦緣特別是，主要諧波=收篁有明顯的位移。例如，如圖5所亍貝獻可能改變製程完成之時間。 W三次諧波之改變1，圖中例示簡化的預期之資料，在者之改變十分明顯^明顯且在T2處基礎及三次譜波兩程之完成。此等線端J$程之分析顯示此等改變係由於製端偵測方&。貞測之方法可為一準破的且經濟的終該處理過之資料接著被送至一工具控制43〇控制43°可被設定成執行數個工作。工具控制43。可5執行具之幽圓第12頁 1230996 五、發明說明（8) 某^工作包含決定終點，能量控制及氣體控制（流量，壓力等）。如圖4所示，工具控制430係連接至腔室11〇及RF產生=420。以此法，可讓工具控制根據從處理器15〇接收到之資料調整此等裝置之參數，使得在腔室Π 〇中可維持一可重複之製程。、 t如前所述，PCA係一多重變量統計程序可將大量的相，變數之集合簡化成較小量之主要成分之集合。因此，在才又正時期’ pCA可用於首先從包含各種諧波之資料之資料產生-共分散矩陣。接著’一特徵解答可從共分散矩且因此可計算出一特徵向量集合。從特徵解答，异出母一主要成分之貢獻百分比。使用百分比，可根侍到之百分比之特徵向量之比重總合選擇係數。此可$各種參數執行，包含能量，氣流及腔室壓力。只要校正完成且各種係數被決定以後’該工具控制可使用誃二 :控制迴路中，此係習知此技藝之人士所熟知。在此種型式之回授迴路中，可維持可重複之製程。處理器150可連接至數個裝置，如圖2所示。某些在本實施例中係重要的，包含使用者介面24〇及外部一電 250。此外，使用者介面24〇及外部電腦25〇兩個可能一個裝置，例如，一個人電腦。巧門最後’如習知此技藝之人士所知，處理器工5〇所 ^貝料量可能十分龐大。考慮此點，可能需要一裝置（未圖不）。-連接儲存裝置之可能的組態為 = 至處理器150。可選擇地，、經由網路26〇(顯示於圖2中）使1230996 V. Description of the invention (7) For example, the cleanliness of parts, plasma density, electronic temperature and terminal debt measurement. In one embodiment of the use value ί, the received trajectory data of the 叩 energy can be wave: Ϊ Ϊ technology 'includes an FFT and is converted into a frequency domain output signal. The harmonic timing pull-out can then be taken out and multiplied by a factor determined by the plasma processing system: Den A. PCA is good for determining coefficients because its data is transformed into a smaller set of major values. , (_ 大二 Ϊ ί can be achieved by converting the original data value set into a new original 乂,) set of uncorrected linear combinations. ^ Z is the magnitude of the fundamental frequency and harmonic frequency of the received iRF energy. : Ϊ: analysis, including energy analysis, flow analysis, and pressure: there is a big: the obtained information can still decide which spectrum _ ^ ^ y ^ lives in and therefore, determines each frequency component l Μ ^ ^ Coefficient. Dependency analysis can also determine if a parameter is changed from the system to other parameters. However, the initial results show that the parameters are acceptable; the second sounds, it can be clearly seen that the 1-end detection can be performed. Once the edge is particularly, there is a significant shift in the main harmonic = 篁. For example, the time shown in Figure 5 may change when the process is completed. The change of the third harmonic of W1, illustrated in the figure is a simplified expected data, where the change is very obvious ^ obvious and completed at T2 and the third-order spectral wave. An analysis of these line end J $ processes shows that these changes are due to the system's detection party &. The method of chastity test can be a quasi-broken and economical end. The processed data is then sent to a tool control 43. Control 43 ° can be set to perform several tasks. Tool control 43. The circle of 5 implements Page 12 1230996 V. Description of the invention (8) A certain task includes determining the end point, energy control and gas control (flow, pressure, etc.). As shown in Figure 4, the tool control 430 is connected to the chamber 110 and RF generation = 420. In this way, the tool control is allowed to adjust the parameters of these devices based on the data received from the processor 150, so that a repeatable process can be maintained in the chamber Π0. As described above, PCA is a multivariate statistical program that can reduce a large number of phases and variables to a smaller number of major components. Therefore, in the positive period, pCA can be used to first generate a co-dispersion matrix from data containing data of various harmonics. Then a feature solution can be calculated from the co-dispersion moments and therefore a set of feature vectors. From the characteristic solution, the percentage of the contribution of the main component of the alienated mother. Using percentages, the proportion of the feature vectors of the percentages that can be served is the total selection coefficient. This can be performed with various parameters including energy, airflow and chamber pressure. Once the calibration is completed and various coefficients are determined, the tool control can be used. Second: In the control loop, this is well known to those skilled in the art. In this type of feedback loop, repeatable processes can be maintained. The processor 150 may be connected to several devices, as shown in FIG. 2. Some are important in this embodiment and include a user interface 24o and an external 250. In addition, the user interface 24 and the external computer 250 may be one device, for example, a personal computer. Qiaomen Finally, as known to those skilled in the art, the amount of material in a processor can be very large. Considering this, a device may be required (not shown). -A possible configuration for connecting a storage device is = to the processor 150. Alternatively, via network 26 (shown in Figure 2)

第13頁 1230996 五、發明說明（9) 用遠端儲存裝置可能是有利的。缺法都是可接受的。儲存資料之一個、卢f何儲存資料之方處理及分析。此外，儲存之資料以做進-步之於操作工具控制430之、用於塑這一可接受之用程。 < 徑制系統，且因此，控制電漿製太路Ϊ述對於實施例之說明係提供習知此技藝之人士實現本發明。此等實施例之種種修改係可能的且在此所呈現之用於里測半導體製程參數之RF感測器之一般原則亦可應用，其他實施例。因此，本發明並非限於前述之實施例，而是包含符合本文所揭露之任何型式之主要及新穎特色之最大範圍。第14頁 1230996 圖式簡單說明五、【圖式簡單說明】圖1係依照本發明之一實施例之RF感測器；圖2係依照本發明之一實施例之天線及處理器之簡化之方塊圖；圖3係依照本發明之一實施例之天線之簡化之方塊圖；圖4係依照本發明之一實施例之電漿處理系統之簡化之方塊圖；及圖5係依照本發明之一實施例之預期之諧波資料之簡圖。元件符號說明： 110〜腔室 120〜RF能量 1 2 5〜上電極 130〜電漿 1 4 0〜天線 1 5 0〜處理器 2 1 0〜高通濾波器 220〜低雜訊放大器（LNA) 2 3 0〜處理器 240〜使用者介面 2 5 0〜外部電腦 2 6 0〜網路Page 13 1230996 V. Description of the invention (9) It may be advantageous to use a remote storage device. Missing methods are all acceptable. One of the stored data, the other side of the stored data processing and analysis. In addition, the stored data is used for further processing of the tool control 430 for acceptable use in shaping. < The diameter control system, and therefore, the control of the plasma system, the description of the embodiment is provided for those skilled in the art to realize the present invention. Various modifications of these embodiments are possible and the general principles of the RF sensor for measuring semiconductor process parameters presented here are also applicable, other embodiments are also applicable. Therefore, the present invention is not limited to the foregoing embodiments, but encompasses the widest scope including the main and novel features of any type disclosed herein. Page 14 1230996 Brief description of the drawings 5. Simple description of the drawings FIG. 1 is an RF sensor according to an embodiment of the present invention; FIG. 2 is a simplified diagram of an antenna and a processor according to an embodiment of the present invention Block diagram; FIG. 3 is a simplified block diagram of an antenna according to an embodiment of the present invention; FIG. 4 is a simplified block diagram of a plasma processing system according to an embodiment of the present invention; A simplified diagram of expected harmonic data for an embodiment. Description of component symbols: 110 ~ chamber 120 ~ RF energy 1 2 5 ~ upper electrode 130 ~ plasma 1 4 0 ~ antenna 1 5 0 ~ processor 2 1 0 ~ high-pass filter 220 ~ low noise amplifier (LNA) 2 3 0 ~ processor 240 ~ user interface 2 5 0 ~ external computer 2 6 0 ~ network

1230996 圖式簡單說明 310 320 330 340 410 420 430 440 450 連接牆吸收器吸收器封閉牆上電極配合網路 RF產生器工具控制下電極配合網路下電極1230996 Brief description of the diagram

第16頁Page 16

Claims

1230996 六、申請專利範圍 1. 一種用於感測電漿製程參數之RF感測器，包含：一電漿處理工具，具有一電漿處理區域；及一天線，用於接收從該電漿處理工具放射出之RF能量；其中，該接收之RF能量包含一基礎頻率及複數諧波頻率，且其中，該天線係位於該電漿處理區域之外。 2·如申請專利範圍第1項之用於感測電漿製程參數之 RF感測器，其中尚包含：一處理器，該處理器被連接至該天線以處理從該天線接收之該RF能量。 3. 如申請專利範圍第2項之用於感測電漿製程參數之 RF感測器，其中該處理器尚包含：一濾波器，連接至該天線；一放大器，連接至該遽波器；及一資料處理裝置，連接至該放大器。 4. 如申請專利範圍第3項之用於感測電漿製程參數之 RF感測器，其中該資料處理裝置係可規劃的以獨立支援至少兩個輸入信號。 5. 如申請專利範圍第3項之用於感測電漿製程參數之 RF感測器，其中該濾波器係一高通瀘、波器。 6. 如申請專利範圍第3項之用於感測電漿製程參數之 RF感測器，其中該放大器係一低雜訊放大器。 7. 如申請專利範圍第3項之用於感測電漿製程參數之1230996 VI. Scope of patent application 1. An RF sensor for sensing plasma process parameters, comprising: a plasma processing tool having a plasma processing area; and an antenna for receiving the plasma processing RF energy emitted by the tool; wherein the received RF energy includes a fundamental frequency and a complex harmonic frequency, and wherein the antenna is located outside the plasma processing area. 2. The RF sensor for sensing plasma process parameters as described in item 1 of the patent application scope, further comprising: a processor connected to the antenna to process the RF energy received from the antenna . 3. For example, an RF sensor for sensing a plasma manufacturing process parameter in the second patent application range, wherein the processor further comprises: a filter connected to the antenna; an amplifier connected to the waver; And a data processing device connected to the amplifier. 4. For example, the RF sensor for sensing plasma process parameters in item 3 of the patent application scope, wherein the data processing device can be planned to independently support at least two input signals. 5. For example, the RF sensor for sensing plasma process parameters in item 3 of the scope of patent application, wherein the filter is a high-pass chirp, wave filter. 6. For example, the RF sensor for sensing plasma process parameters in item 3 of the patent application scope, wherein the amplifier is a low noise amplifier. 7. If the scope of the patent application is used for sensing the parameters of the plasma process

第17頁 1230996Page 12 1230996

RF感測器，其中尚包含：一使用者介面，連接至該資料處理一外部電腦’連接至該資料處理裝置罝，及其中，該使用者介面及該外邱蕾眺/ ’ 者與該資料處理裝置互相溝通。U U設定成容許使用 8 ,申請專利範圍第7項之用於感測電漿製程參數之 RF感測益，八中該使用者介面係—觸控螢幕監視琴。The RF sensor also includes: a user interface, connected to the data processing, an external computer, 'connected to the data processing device', and, among other things, the user interface and the external Qiu Lei'an / 'the person and the data The processing devices communicate with each other. U U is set to allow the use of RF sensing benefits for sensing plasma process parameters in item 7 of the scope of the patent application. The user interface in the eighth is a touch screen monitor piano.

9.如申請專利範圍第3項之用於感測電漿製程參數之 RF感測器，其中該資料處理裝置係連接至一網路以容許使用者在遠端與該資料處理裝置交互溝通。 10·如申請專利範圍第2項之用於感測電漿製程參數之RF感測器’其中該處理器係設定成至少執行該心能量之頻谱分析及禮波成分分析其中一項。 11·如申請專利範圍第1項之用於感測電漿製程參數之RF感測器，其中該天線係寬帶單極天線。 12· —種電漿製程之參數的感測方法，包含：提供一天線，緊臨於/電漿處理工具但位於電漿處理區域之外；及9. The RF sensor for sensing a plasma process parameter according to item 3 of the patent application scope, wherein the data processing device is connected to a network to allow a user to interact with the data processing device remotely. 10. The RF sensor for sensing plasma process parameters according to item 2 of the scope of the patent application, wherein the processor is configured to perform at least one of spectrum analysis and gift wave component analysis of the cardiac energy. 11. The RF sensor for sensing plasma process parameters as described in the first item of the patent application scope, wherein the antenna is a broadband monopole antenna. 12. · A method for sensing parameters of a plasma process, including: providing an antenna, which is located immediately adjacent to a plasma processing tool but is located outside a plasma processing area; and

感測該電漿處理工具放射出之RF能量。 13·如申請專利範圍第1 2項之電漿製程之參數的感測方法，尚包含：處理該RF能量，其中該處理包含該RF能量之頻譜分析及I皆波成分分析至少其中一項。Sensing RF energy emitted by the plasma processing tool. 13. The method for sensing the parameters of the plasma manufacturing process according to item 12 of the patent application scope, further comprising: processing the RF energy, wherein the processing includes at least one of spectrum analysis and I-wave component analysis of the RF energy.