TWI225768B - Electromagnetic shielding material to form shielding layer - Google Patents
Electromagnetic shielding material to form shielding layer Download PDFInfo
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- TWI225768B TWI225768B TW92127041A TW92127041A TWI225768B TW I225768 B TWI225768 B TW I225768B TW 92127041 A TW92127041 A TW 92127041A TW 92127041 A TW92127041 A TW 92127041A TW I225768 B TWI225768 B TW I225768B
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- layer
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- electromagnetic wave
- metals
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- 239000000463 material Substances 0.000 title claims abstract description 80
- 229920006254 polymer film Polymers 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 150000002739 metals Chemical class 0.000 claims abstract description 54
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 51
- 239000000956 alloy Substances 0.000 claims abstract description 51
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 51
- 229910052742 iron Inorganic materials 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000004544 sputter deposition Methods 0.000 claims abstract description 38
- 238000007747 plating Methods 0.000 claims abstract description 34
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 25
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 238000007740 vapor deposition Methods 0.000 claims abstract description 17
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 15
- 229910052718 tin Inorganic materials 0.000 claims abstract description 7
- 230000000873 masking effect Effects 0.000 claims description 172
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- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- 238000009941 weaving Methods 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 218
- 239000002356 single layer Substances 0.000 abstract 1
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 40
- 239000010949 copper Substances 0.000 description 31
- 238000009713 electroplating Methods 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 23
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- 239000010408 film Substances 0.000 description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 239000007788 liquid Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 12
- 230000003405 preventing effect Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000002265 prevention Effects 0.000 description 10
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- 230000003064 anti-oxidating effect Effects 0.000 description 8
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- 239000000758 substrate Substances 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- -1 Ci * Substances 0.000 description 7
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 230000004913 activation Effects 0.000 description 7
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 7
- 239000004327 boric acid Substances 0.000 description 7
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 7
- 229920003002 synthetic resin Polymers 0.000 description 7
- 239000000057 synthetic resin Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 6
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
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- 239000005060 rubber Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000002845 discoloration Methods 0.000 description 5
- 235000003891 ferrous sulphate Nutrition 0.000 description 5
- 239000011790 ferrous sulphate Substances 0.000 description 5
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 5
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920002799 BoPET Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 230000009975 flexible effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
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- 239000011889 copper foil Substances 0.000 description 2
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- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000005997 Calcium carbide Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
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- 101100443631 Schizosaccharomyces pombe (strain 972 / ATCC 24843) dni2 gene Proteins 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- 230000010485 coping Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
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- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
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- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
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- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- CLZWAWBPWVRRGI-UHFFFAOYSA-N tert-butyl 2-[2-[2-[2-[bis[2-[(2-methylpropan-2-yl)oxy]-2-oxoethyl]amino]-5-bromophenoxy]ethoxy]-4-methyl-n-[2-[(2-methylpropan-2-yl)oxy]-2-oxoethyl]anilino]acetate Chemical compound CC1=CC=C(N(CC(=O)OC(C)(C)C)CC(=O)OC(C)(C)C)C(OCCOC=2C(=CC=C(Br)C=2)N(CC(=O)OC(C)(C)C)CC(=O)OC(C)(C)C)=C1 CLZWAWBPWVRRGI-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0084—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
1225768 (1) 玖、發明說明 【發明所屬之技術領域】 本發明爲關於電磁波掩蔽材料。更詳言之，關於安裝 於各種通信機、電腦、家電製品或汽車和電線等，且有效 掩蔽彼等所發生之各種雜訊等電磁波不會釋出至外部，並 且有效掩蔽其他發生源對彼等照射之電磁波不會侵入內部 的電磁波掩蔽材料。1225768 (1) Description of the invention [Technical field to which the invention belongs] The present invention relates to an electromagnetic wave shielding material. In more detail, electromagnetic waves such as those installed on various telecommunications machines, computers, home appliances, automobiles, and electric wires, etc., which effectively mask various noises generated by them, will not be released to the outside, and will effectively mask other sources of interference. The irradiated electromagnetic waves will not penetrate the electromagnetic shielding material inside.
【先前技術】[Prior art]
自以往，已知來自通信機、電腦、家電製品、汽車、 電線等之具有各種周波數的電磁波爲以雜訊型式等發生。 此些電磁波已知成爲其他電氣製品產生錯誤動作的原因並 且對人體產生不良影響。因此嘗試以各式各樣之方法將其 掩蔽。例如，低周波數之電磁波的掩蔽對策，自以往爲使 用經壓拉的鐵帶和鐡素體，但其爲笨重且體積龐大，故難 以應用於近年之輕薄短小化的各種製品。另一方面，高周 波數之電磁波的掩蔽對策爲使用對合成樹脂薄膜貼合銅箔 ，其雖於上述鐵帶等可變薄至某程度之厚度，但於製造薄 銅箔上有極限，難以廉價製造9 μπι以下的厚度。因此， 在使用於近年之輕薄短小化之製品之情況中’特別在使用 於要求可撓性之用途之情況中，期望更加提高其性能。又 ，於此些先前之掩蔽對策手段中’並無法同時應付低周波 數及高周波數兩者。 還有，於特開2 0 0 0 - 2 1 2 3 1 5號公報中，記載於高分子 -4- (2)1225768 薄膜上以真空蒸鍍法形成金屬所構成之掩蔽層的電磁波掩 蔽材料。但是，其係經由真空蒸鍍法形成掩蔽層，故於形 成厚掩蔽層上則伴隨著困難，並且無法達成充分的掩蔽效 果。Conventionally, it has been known that electromagnetic waves having various frequencies from communication devices, computers, home appliances, automobiles, electric wires, and the like are generated in a noise pattern or the like. These electromagnetic waves are known to cause erroneous actions of other electrical products and have an adverse effect on the human body. So try to cover it up in a variety of ways. For example, countermeasures for masking electromagnetic waves with a low frequency have conventionally used compression-stretched iron belts and elementary bodies, but they are bulky and bulky, making them difficult to apply to various products that have become thinner and shorter in recent years. On the other hand, masking countermeasures for electromagnetic waves with high frequency are to use a copper foil bonded to a synthetic resin film. Although it can be thinned to a certain thickness in the above-mentioned iron tapes, etc., it is limited in the production of thin copper foil and it is difficult to cheap Manufactured to a thickness of 9 μm or less. Therefore, in the case of using thin, thin, and short products in recent years, it is desired to further improve its performance, particularly in the case of using applications requiring flexibility. Also, in these previous masking countermeasures, it is not possible to cope with both the low frequency and the high frequency. Also, in JP-A No. 2000- 2 1 2 3 1 5, an electromagnetic wave masking material described in a polymer-4- (2) 1225768 film is used to form a masking layer made of a metal by a vacuum evaporation method. . However, since a masking layer is formed by a vacuum evaporation method, it is difficult to form a thick masking layer, and a sufficient masking effect cannot be achieved.
又，於特開200 1 -1 43 644號公報中，記載於導電層和 低導電層所構成之多層構造的最外層形成電極膜的電磁波 掩蔽材料。但是，因爲最外層之電極膜爲僅以利用真空處 理的濺鍍法等所形成，故於形成厚掩蔽層上伴隨著困難， 並且無法達成充分的掩蔽效果。 又，於特開2 0 0 1 - 2 0 0 3 7 6號公報中，記載以物理蒸鍍 形成第一金屬層，並於其上將第二金屬層予以電鍍的電磁 波掩蔽材料。但是，以第一金屬層所造成的防止氧化效果 不夠充分，且第二金屬層爲因氧化而惡化且具有剝離的可 能性，無法達成充分的掩蔽效果。Also, Japanese Patent Application Laid-Open No. 200 1 -1 43 644 describes an electromagnetic wave shielding material that forms an electrode film in the outermost layer of a multilayer structure composed of a conductive layer and a low-conductivity layer. However, since the outermost electrode film is formed only by a sputtering method using a vacuum process or the like, it is difficult to form a thick masking layer, and a sufficient masking effect cannot be achieved. Also, Japanese Patent Application Laid-Open No. 2000-2000 07.6 describes an electromagnetic wave shielding material in which a first metal layer is formed by physical vapor deposition and a second metal layer is plated thereon. However, the anti-oxidation effect by the first metal layer is insufficient, and the second metal layer is deteriorated by oxidation and has a possibility of peeling off, so that a sufficient masking effect cannot be achieved.
又’於特開2 002- 1 98 6 8 1號公報中，記載於樹脂所構 成之基質材料表面形成電鍍被膜的電磁波掩蔽材料。但是 ，因爲於該基質材料上直接形成電鍍被膜，故基質材料與 電鍍被膜的密合性弱，且剝離並且無法達成充分的掩蔽效 果。 【發明內容】 本發明爲鑑於如上述之現狀，其目的爲在於提供可應 付輕薄短小化之各種製品並且經由將其厚度變薄而深具可 撓性性狀的電磁波掩蔽材料。又，本發明之其他目的爲在 >5- 1225768 Ο) 於fc供視需要封於低周波數及高周波數兩者之電磁波可同 時予以掩蔽的電磁波掩蔽材料。 本發明者爲了解決上述課題而重覆致力硏究時，發現 以先前掩敝層之形成方法乃難以解決上述課題，必須以完 全新禎的形成方法形成掩蔽層，並且根據此發現再繼續硏 究’進而完成本發明。 即，本發明之電磁波掩蔽材料爲於聚合物薄膜之表面 ’令厚度爲1〜8μηι’且由含有至少—種Ni、Fe、Co、Ti 、Zn、Ci*、Sn、及彼等金屬之合金所組成群中選出至 少一種所構成的掩蔽層，以濺鍍法、蒸鍍法或電鍍法之任 一種方法形成一層或二層以上爲其特徵。 又’本發明之電磁波掩蔽材料爲於聚合物薄膜之表面 與掩蔽層之間’令厚度爲以下，且由含有至少一種 Ni、Co ' Zn、Ti、Cr、彼等金屬之氧化物、氮化物及彼等 金屬之合金所組成群中選出至少一種所構成的基底層，以 鍍法或蒸鍍法之任一種方法形成一層或二層以上。 又’本發明之電磁波掩蔽材料爲於聚合物薄膜之表面 與掩蔽層之間，令厚度爲1 μηΐ以下，且由含有至少一種 Ni、Co、Zn、Ti、Ch•、彼等金屬之氧化物、氮化物及彼等 金屬之合金所組成群中選出至少一種所構成，並且以濺鍍 法或蒸鍍法之任一種方法所形成之具有防止氧化效果的基 底層’與厚度爲ΙμΐΉ以下，且由含有至少一種Ni、Co、 F e、Cii及彼等金屬之合金所組成群中選出至少一種所構 成’並且濺鍍法或蒸鍍法之任一種方法所形成之作用爲電 -6- (4)1225768 極的基底層，爲分別以此順序形成。 又’本發明之電磁波掩蔽材料爲以含有至少一種Ni 、Co、Fe及彼等金屬合金所組成群中選出一種構成掩蔽 層。Further, in Japanese Patent Application Laid-Open No. 2 002-1 98 6 81, an electromagnetic wave shielding material is described in which a plating film is formed on the surface of a substrate made of resin. However, since a plating film is formed directly on the matrix material, the adhesion between the matrix material and the plating film is weak, and the masking effect cannot be achieved by peeling. [Summary of the Invention] The present invention has been made in view of the current situation as described above, and an object thereof is to provide an electromagnetic wave shielding material capable of coping with various products that are thinner, thinner, and more flexible by reducing the thickness thereof. In addition, another object of the present invention is an electromagnetic wave masking material capable of simultaneously masking electromagnetic waves of both low frequency and high frequency at fc, if necessary, from 5 to 1225768 0). In order to solve the above problems, the present inventors repeatedly studied and found that it was difficult to solve the above problems by the previous method of forming a masking layer. It was necessary to form a masking layer by a completely new method of forming a masking layer, and then continue to investigate based on this finding 'Furthermore, the present invention has been completed. That is, the electromagnetic wave shielding material of the present invention is an alloy containing at least one kind of Ni, Fe, Co, Ti, Zn, Ci *, Sn, and other metals on the surface of the polymer film. At least one masking layer made of the selected group is selected, and one or two or more layers are formed by any one of a sputtering method, a vapor deposition method, and a plating method. Also, "the electromagnetic wave masking material of the present invention is between the surface of the polymer film and the masking layer" so that the thickness is the following, and is made of oxides and nitrides containing at least one kind of Ni, Co 'Zn, Ti, Cr, and other metals And at least one type of base layer selected from the group consisting of alloys of these metals, and one or two or more layers formed by any one of a plating method and a vapor deposition method. Also, the electromagnetic wave masking material of the present invention is between the surface of the polymer film and the masking layer, the thickness is 1 μηΐ or less, and the oxide film contains at least one kind of oxides of Ni, Co, Zn, Ti, Ch •, and other metals. Selected from the group consisting of nitrides, nitrides, and alloys of these metals, and has a base layer having an oxidation prevention effect formed by any of sputtering or vapor deposition methods, and a thickness of 1 μΐΉ or less, and It is composed of at least one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, Cii, and these metals', and the effect formed by any one of the sputtering method or the evaporation method is electric-6- ( 4) A base layer of 1225768 electrodes is formed in this order. Furthermore, the electromagnetic wave masking material of the present invention is a masking layer selected from the group consisting of at least one kind of Ni, Co, Fe, and their metal alloys.
又’本發明之電磁波掩蔽材料爲以C u構成掩蔽層。 又，本發明之電磁波掩蔽材料爲分開形成二層掩蔽層 ’其一者爲以Cu所構成，另一者爲以含有至少一種Ni、 c 0、F e及彼等金屬之合金所組成群中選出一種所構成。 又’本發明之電磁波掩蔽材料爲分開形成三層掩蔽層 ’該三層之中間層爲由C υ所形成之層，並將該層夾住且 於其上下形成含有至少一種Ni、Co、Fe及彼等金屬之合 金所組成群中選出一種所構成的層。In addition, the electromagnetic wave masking material of the present invention is a masking layer made of Cu. In addition, the electromagnetic wave shielding material of the present invention is formed by forming two shielding layers separately. One of them is made of Cu, and the other is made of an alloy containing at least one kind of Ni, c 0, Fe, and these metals. Choose a composition. Also, the electromagnetic wave shielding material of the present invention is formed into three masking layers separately. The intermediate layer of the three layers is a layer formed by C υ, and the layer is sandwiched and formed to contain at least one kind of Ni, Co, and Fe above and below. One of the layers selected from the group consisting of alloys of these metals.
又，本發明之電磁波掩蔽材料爲於聚合物薄膜之任一 者表面，令厚度爲Ιμηι以下，且含有至少一種Ni、Co、 Zn、Fe、Cu、Ti、Cr、彼等金屬之氧化物、氮化物及彼等 金屬之合金所組成群中選出一種所構成的基底層爲以濺鍍 法或蒸鍍法之任一種方法形成一層或二層以上，並於其上 形成含有至少一種Ni、Co、Fe及彼等金屬之合金所組成 群中選出一種所構成的第一掩蔽層，且再於其上形成由 Cu所構成之層，並且於該聚合物薄膜之另一者表面，令 厚度爲Ιμιτα以下，且含有至少一種Ni、Co、Zn、Fe、Cu 、Ti、Cr、彼等金屬之氧化物、氮化物及彼等金屬之合金 所組成群中選出一種所構成的基底層爲以濺鍍法或蒸鍍法 之任一種方法形成一層或二層以上，並於其上形成含有至 •Ί · (5)1225768 少一種Ni、Co、Fe及彼等金屬之合金所組成群中選出一 種所構成的第三掩蔽層。In addition, the electromagnetic wave shielding material of the present invention is on any surface of a polymer film, has a thickness of 1 μm or less, and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides of these metals, One kind of base layer composed of nitrides and alloys of these metals is selected. One or two or more layers are formed by any of sputtering method and evaporation method, and at least one kind of Ni, Co is formed thereon. , Fe and their alloys are selected from the group consisting of a first masking layer, and a layer of Cu is formed thereon, and on the other surface of the polymer film, the thickness is A substrate layer composed of at least 1 μmτα and containing at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides, nitrides, and alloys of these metals is selected from the group consisting of Either one of the plating method or the vapor deposition method is used to form one or two or more layers, and to form thereon an alloy containing up to Ί · (5) 1225768, one of Ni, Co, Fe, and other metals selected from the group consisting of The third masking layer
又’本發明之電磁波掩蔽材料爲於聚合物薄膜之任一 者表囬’令厚度爲1 μ m以下，且含有至少一種N i、C 〇、 Zn、Fe、Cu、Ti、Cr、彼等金屬之氧化物、氮化物及彼等 金屬之合金所組成群中選出一種所構成的基底層爲以濺鍍 法或蒸鍍法之任一種方法形成一層或二層以上，並於其上 形成由Cu所構成的第一掩蔽層，且再於其上形成由含有 至少一種Ni、Co、Fe及彼等金屬之合金所組成群中選出 一種所構成的第二掩蔽層，並且於該聚合物薄膜之另一者 表面’令厚度爲Ιμηι以下，且含有至少一種川、Co、Zn 、Fe、Cu、Ti、Cr、彼等金屬之氧化物、氮化物及彼等金 屬之合金所組成群中選出一種所構成的基底層爲以濺鍍法 或蒸鍍法之任一種方法形成一層或二層以上，並於其上形 成含有至少一種Ni、Co、Fe及彼等金屬之合金所組成群 中選出一種所構成的第三掩蔽層。 又’本發明之電磁波掩蔽材料爲於Cu所構成的掩蔽 層上’形成由Sn、N!、Co、丁丨、Zn或以所構成的防止 變色層。 【實施方式】 (電磁波掩蔽材料） 本發明之電磁波掩蔽材料於基本上爲於聚合物薄膜之 表面’具有形成掩蔽層的構成。以下，說明各構成。 (6) (6)1225768 (聚合物薄膜） 本發明所用之聚合物薄膜可列舉例如合成樹脂薄膜、 熱塑性彈性體薄膜、橡膠薄膜等。合成樹脂薄膜可列舉例 如PET、PEN、丙烯、尼龍、聚乙烯、聚丙烯、氯乙烯、 聚醯亞胺、液晶聚合物、環氧等之合成樹脂所構成的薄膜 。熱塑性彈性體薄膜可列舉例如苯乙烯系、氯乙烯系、烯 烴系、胺基甲酸乙酯系、酯系、醯胺系等之熱塑性彈性體 所構成的薄膜。又，橡膠薄膜除了天然橡膠以外，可列舉 例如丁二烯橡膠、間戊二烯橡膠、氯間戊二烯橡膠、苯乙 烯-丁二烯橡膠、腈橡膠、丁基橡膠、乙烯-丙烯橡膠、丙 烯橡膠、胺基甲酸乙酯橡膠、氟橡膠、聚矽氧橡膠等之合 成橡膠所構成的薄膜。此處所列舉之合成樹脂、熱塑性彈 性體或橡膠之種類完全僅爲例示，並非限定於此。又，本 發明所謂之薄膜爲包含具有厚度爲2〜200μηι，較佳爲 4〜30μ1Ώ ό勺薄片狀形狀。厚度未滿2μηι時，做爲支撐後述 掩敝層之基體機能難以充分，另一方面，超過200μιτι時 ’成爲缺乏可撓性之物質並且難以適應輕薄短小化的製品 ’故均爲不佳。於本發明中，可根據其用途而選擇上述合 成樹脂、熱塑性彈性體或橡膠的種類及厚度。例如，於要 求耐熱性之用途中，選擇聚醯亞胺和液晶聚合物做爲合成 樹脂’且於未要求耐熱性之情形中則以考慮費用等並且選 擇Ρ Ε Τ等爲適當。又，於要求彈性之情形中則以選擇熱 塑性彈性體和橡膠爲適當。又，對此類聚合物薄膜，以提 (7) (7)1225768 筒強度且賦予難燃效果等爲目的，例如可添加玻璃纖維等 之各種充塡劑類。 還有’本發明所使用之聚合物薄膜爲於形成後述各層 之前’進行乾燥處理令含水量大約爲未滿0·01%爲佳。用 以提高與後述各層，特別是與掩蔽層的密合性。該乾燥處 理方法可依常法實施，可列舉例如於4〇〜2〇(rc，較佳爲 40〜1 20°C溫度中加熱之真空狀態（〗X 1 〇-3〜1 ·5 X 1 (T】Pa ) 下進行碰撞處理之方法。該碰撞處理之條件爲於Ar氣體 60〜3 00cc/分鐘、較佳爲1〇〇〜2〇〇cc/分鐘、輸出功率 〇·5〜2kw、較佳爲m 3kw下，使用濺鍍裝置等則可進 行。 X ’本發明所用之聚合物薄膜爲使用對於對象物照射 離子的離子槍，且使用照射至少一種離子之離子槍進行前 處理爲佳。此類離子可列舉氬等之稀有氣體離子和氧離子 或氮離子，或其混合離子等。 若如此對聚合物薄膜預先照射離子，則對於後述掩蔽 層和基底層之聚合物薄膜的密合性爲非常高。其機制雖未 詳細闡明’但認爲大約爲經由離子照射而令聚合物薄膜表 面被活化’或者進行極微細狀態之粗化處理（凹凸處理） 〇 對於此類聚合物薄膜照射離子爲以形成後述之掩蔽層 和基底層之前以前處理型式進行爲佳。 又’以離子槍照射離子之條件例如於具備離子槍之裝 置中，以 lxio·3 〜TxlO^Pa，較佳爲 5xl〇·3 〜SxlO^Pa 之 -10- (8) (8)1225768 真空下，離子原料氣體50〜50cc/分鐘、較佳爲80〜2 5 0cc/ 分鐘，標的電流（電源）0.01〜5kw/dm2、較佳爲 〇 .]〜3 k w / d】n 2之條件下實行。 (掩蔽層） 本發明之掩蔽層爲將具有各種周波數的電磁波予以掩 蔽’即具有掩蔽之作用，爲於前述聚合物薄膜之表面，或 於形成後述基底層之情況中爲於其上形成。此類掩蔽層爲 G度爲 1〜8μηι’且含有至少一種 Ni、Fe、Co、Ti、Ζη、 &、Sn、Cia及彼等金屬之合金所組成群中選出一種者， 且以濺鍍法、蒸鍍法或電鍍法之任一種方法分別形成一層 或二層以上爲其特徵。其厚度限定爲1〜8 μπι係因於厚度 爲未滿1 μηι時，對於電磁波的掩蔽性不夠充分，另一方 面’即使超過 8 μηι亦不會令電磁波的掩蔽有所差別且反 而阻礙可撓性。若考慮此些點，則其厚度以2〜5 μηι爲特 佳。又，將構成成分限定於上述金屬類係因對於電磁波的 掩蔽性優良，且其形成手段必須可採用濺鍍法、蒸鍍法或 電鍍法。又，形成方法採用濺鍍法、蒸鍍法或電鍍法係因 如前述之金屬並不能使用做爲金屬箔，且於其性能方面必 須與聚合物薄膜等具有充分的密合性，且視需要自由設定 其厚度。 本發明之掩蔽層爲根據所欲掩蔽之電磁波周波數而選 擇構成金屬之種類爲佳。例如，對於周波數大約爲 5 0 0 0 Η ζ以下之低周波數的電磁波，選擇含有至少一種N i »11 - (9) (9)1225768 、Co、Fe及彼等金屬之合金所組成群中選出一種爲佳， 對於周波數大約爲5 0 00Hz以上之高周波數的電磁波，則 選擇Cu爲佳。更具體而言，以Cu構成掩蔽層時，於聚 合物薄膜之表面，較佳爲於此表面形成後述具有防止氧化 效果的基底層並且於其上形成由C u所構成的後述基底層 ，加上以電鍍液之組成（硫酸銅50〜3 00克/公升、較佳爲 80〜150克/公升、硫酸50〜3 0 0克/公升、較佳爲90〜丨60克 /公升、氯3 0〜1 0 0 p p m、較佳爲5 0〜7 0 p p m且另外視需要配 合少重的添加劑）’電流密度 0 · 1〜2 0 A / d m 2、較佳爲 0.5〜4 A/dm2、液溫10〜7 0 t：、較佳爲25〜35 °C之條件下進 行電鍍，則可形成〗〜8 μπι的厚度。依此，可形成對於高 周波數之電磁波顯示出特優良之掩蔽性的掩蔽層。 又’本發明之掩蔽層可分開形成二層以上。例如，若 以含有至少一種N i、C 〇、F e及彼等金屬之合金所組成群 中選出一種，與C u兩者分別構成二層掩蔽層，則可作對 於低周波數和高周波數兩者電磁波顯示掩蔽性的掩蔽層， 爲本發明之特佳態樣之一。更具體而言，於聚合物薄膜之 表面、較佳爲於此表面形成後述基底層之表面，以電鍍液 之組成（硫酸鎳50〜3 5〇克/公升、較佳爲200〜2 5 0克/公 升、氯化鎳10〜100克/公升、較佳爲40〜50克/公升、硼 酸1 0〜6 0克/公升、較佳爲30〜50克/公升、另外視需要配 合少量的添加劑，且p Η 0 · 5〜6 · 0、較佳爲p Η 3.0〜4 · 5之組 成）、電流密度1〜10 A/dm2、較佳爲2〜4 A/dm2、液溫 3 0〜7 0 °C 、較佳爲4 5〜5 5 °C之條件下進行電鍍，形成 -12- (10) (10)1225768 1〜8 μηι厚度之Ni所構成的第一掩蔽層，並於其上以上述 相同條件下形成1〜8 μηι厚度之C u所構成的第一掩蔽層。 還有’此兩掩蔽層的形成順序當然可與上述相反，且於此 情形中亦可掩蔽低周波數及高周波數兩者電磁波。又，例 如以Fe和Ni所構成之合金代替上述Ni構成掩蔽層時， 以電鍍液之組成（硫酸鎳 40〜400克/公升、較佳爲 80〜3 2 0克/公升、氯化鎳20〜]00克/公升、較佳爲80〜320 克/公升、硼酸〗0〜70克/公升、較佳爲35〜50克/公升、硫 酸亞鐵2〜50克/公升、較佳爲5〜20克/公升，另外視需要 配合少量的添加劑，且PH2〜5、較佳爲pH 3〜3.8之組成） 、電流密度1〜15 A/dm2、較佳爲4〜6 A/dni2、液溫30〜70 °C、較佳爲50〜60 °C之條件下進行電鍍則可形成。 更且，本發明之掩蔽層亦可形成三層以上。可例示例 如，如上述形成含有至少一種Ni、Co、Fe及彼等金屬之 合金所組成群中選出一種的第一掩蔽層，並於其上形成 Cu所構成的第二掩蔽層，再於其上形成含有至少一種Ni 、Co、Fe及彼等金屬之合金所組成群中選出一種的第三 掩蔽層等。此類構成的電磁波掩蔽材料若例如安裝至電氣 製品，則對於該電氣製品內部所發生之低周波數的電磁波 可予以掩蔽，並且對於欲由外部侵入內部之電磁波亦可予 以有效地掩蔽。 另一方面，本發明之掩蔽層亦可於聚合物薄膜的表裏 兩面形成。可列舉例如，於聚合物薄膜之任一者表面，令 厚度爲Ιμ】τι以下，且含有至少一種Ni、Co、Zn、Fe、Cu -13- (11) 1225768"Electromagnetic wave masking material of the present invention is surface-returned on any of polymer films" Let the thickness be 1 μm or less and contain at least one of Ni, C0, Zn, Fe, Cu, Ti, Cr, etc. One of the metal oxides, nitrides, and alloys of these metals is selected from the group consisting of one or two or more layers formed by sputtering or evaporation, and formed by A first masking layer made of Cu, and a second masking layer made of one selected from the group consisting of an alloy containing at least one kind of Ni, Co, Fe, and these metals is formed on the polymer film. The other surface is selected from the group consisting of a thickness of 1 μm or less, and containing at least one kind of metal, oxide, nitride, and alloy of these metals, including Co, Zn, Fe, Cu, Ti, and Cr. One type of base layer is selected from the group consisting of one or two or more layers formed by a sputtering method or an evaporation method, and an alloy containing at least one kind of Ni, Co, Fe, and these metals is formed thereon. A third masking layer. Further, "the electromagnetic wave masking material of the present invention is a masking layer made of Cu", and a discoloration preventing layer made of Sn, N !, Co, Ding, Zn, or Zn is formed. [Embodiment] (Electromagnetic wave masking material) The electromagnetic wave masking material of the present invention basically has a structure in which a masking layer is formed on the surface of a polymer film. Hereinafter, each configuration will be described. (6) (6) 1225768 (Polymer film) Examples of the polymer film used in the present invention include synthetic resin films, thermoplastic elastomer films, and rubber films. Examples of the synthetic resin film include films made of synthetic resins such as PET, PEN, acrylic, nylon, polyethylene, polypropylene, vinyl chloride, polyimide, liquid crystal polymer, and epoxy. Examples of the thermoplastic elastomer film include films made of thermoplastic elastomers such as styrene-based, vinyl chloride-based, olefin-based, urethane-based, ester-based, and ammonium-based. Examples of the rubber film other than natural rubber include butadiene rubber, isoprene rubber, chloroprene rubber, styrene-butadiene rubber, nitrile rubber, butyl rubber, ethylene-propylene rubber, Films made of synthetic rubber such as acrylic rubber, urethane rubber, fluorine rubber, and silicone rubber. The types of synthetic resins, thermoplastic elastomers, or rubbers listed here are merely examples and are not limited thereto. In addition, the so-called thin film of the present invention includes a sheet-like shape having a thickness of 2 to 200 μm, and preferably 4 to 30 μ1. When the thickness is less than 2 μm, it is difficult to fully function as a substrate for supporting a masking layer described later. On the other hand, when it exceeds 200 μm, it becomes a product that lacks flexibility and is difficult to adapt to thinner and shorter products. In the present invention, the kind and thickness of the synthetic resin, thermoplastic elastomer, or rubber can be selected according to its application. For example, in applications where heat resistance is required, polyimide and liquid crystal polymer are selected as synthetic resin ', and when heat resistance is not required, cost and the like are considered, and ΡΕΤ and the like are appropriate. When elasticity is required, it is appropriate to select a thermoplastic elastomer and rubber. In addition, for such polymer films, for the purpose of improving the strength of (7) (7) 1225768 barrel and giving a flame-resistant effect, various fillers such as glass fiber can be added. In addition, "the polymer film used in the present invention is preferably dried before the formation of each layer described later" so that the water content is less than about 0.01%. It is used to improve the adhesion with the layers described below, especially with the masking layer. This drying treatment method can be carried out according to a conventional method, and examples thereof include a vacuum state heated at a temperature of 40 to 20 (rc, preferably 40 to 120 ° C) (〗 X 1 〇-3 to 1 · 5 X 1 (T) Pa) The method of collision treatment under the conditions of the collision treatment is: Ar gas 60 ~ 300 cc / min, preferably 100 ~ 200 cc / min, output power 0.5 ~ 2kw, It is preferably m 3kw, and it can be performed using a sputtering device, etc. X 'The polymer film used in the present invention is preferably an ion gun that irradiates an object with an ion, and an ion gun that irradiates at least one ion is preferably used for pretreatment. . Such ions include rare gas ions such as argon, oxygen ions, nitrogen ions, or mixed ions thereof. If the polymer film is irradiated with ions in this way, the adhesion of the polymer film of the masking layer and the base layer described later will be closely adhered. The property is very high. Although the mechanism is not explained in detail, “the surface of the polymer film is probably activated by ion irradiation” or roughening treatment (concave and convex treatment) in an extremely fine state is considered. 〇 Irradiation of such polymer films Ion formation It is better to perform the pre-treatment type of the masking layer and the base layer as described above. The conditions for irradiating ions with an ion gun are, for example, in a device equipped with an ion gun, lxio · 3 to TxlO ^ Pa, preferably 5xl0 · 3 to SxlO ^ Pa of -10- (8) (8) 1225768 Under vacuum, the ion source gas is 50 ~ 50cc / min, preferably 80 ~ 2 5 0cc / min, the target current (power) 0.01 ~ 5kw / dm2, preferably 〇.] ~ 3 kw / d] n 2. (Mask layer) The mask layer of the present invention is used for masking electromagnetic waves having various frequencies, that is, it has a masking effect, and is used for the aforementioned polymer film. The surface, or in the case of forming a later-mentioned base layer, is formed thereon. Such a masking layer is a G degree of 1 to 8 μη ′ and contains at least one kind of Ni, Fe, Co, Ti, Zη, &, Sn, Cia, and One is selected from the group consisting of alloys of these metals, and it is characterized by forming one or two or more layers by any of sputtering, evaporation, or electroplating. Its thickness is limited to 1 to 8 μπι. When the thickness is less than 1 μηι, the shielding property for electromagnetic waves is insufficient. On the other hand, even if it exceeds 8 μηι, it will not make a difference in the shielding of electromagnetic waves and will hinder flexibility. Taking these points into consideration, its thickness is particularly preferably 2 ~ 5 μηι. In addition, it will constitute a component It is limited to the above-mentioned metal system because of its excellent shielding property against electromagnetic waves, and its formation means must be able to adopt a sputtering method, a vapor deposition method, or an electroplating method. In addition, the formation method uses a sputtering method, a vapor deposition method, or an electroplating method. The aforementioned metal cannot be used as a metal foil, and in terms of performance, it must have sufficient adhesion with a polymer film, etc., and its thickness can be freely set as required. The masking layer of the present invention preferably selects the type of constituent metal according to the number of electromagnetic waves to be masked. For example, for low frequency electromagnetic waves with a frequency of approximately 5 0 0 0 Η ζ or less, select a group consisting of alloys containing at least one Ni »11-(9) (9) 1225768, Co, Fe, and their metals It is better to choose one of them. For electromagnetic waves with a high frequency of about 5000 Hz or more, Cu is better. More specifically, when the masking layer is made of Cu, it is preferable to form an underlayer having an oxidation prevention effect to be described later on the surface of the polymer film and to form an undercoat layer composed of Cu on the surface. Composition of electroplating solution (copper sulfate 50 ~ 300 g / L, preferably 80 ~ 150 g / L, sulfuric acid 50 ~ 300 g / L, preferably 90 ~ 丨 60 g / L, chlorine 3 0 ~ 1 0 0 ppm, preferably 5 0 ~ 7 0 ppm, and if necessary add a small amount of additives) 'Current density 0 · 1 ~ 2 0 A / dm 2, preferably 0.5 ~ 4 A / dm2, Liquid temperature 10 ~ 7 0 t: When plating is performed under the condition of preferably 25 ~ 35 ° C, it can be formed to a thickness of ~ 8 μm. This makes it possible to form a masking layer that exhibits particularly excellent masking properties for electromagnetic waves with a high frequency. In addition, the masking layer of the present invention can be separately formed into two or more layers. For example, if one is selected from the group consisting of alloys containing at least one Ni, Co, Fe, and their metals, and Cu respectively constitute two masking layers, it can be used for low frequency and high frequency. The masking layer showing the masking property of the two electromagnetic waves is one of the particularly preferred aspects of the present invention. More specifically, the surface of the polymer film, preferably the surface of the substrate layer described later, is formed on the surface of the polymer film, and the composition of the plating solution (nickel sulfate 50 ~ 350 g / liter, preferably 200 ~ 250) G / L, nickel chloride 10 to 100 g / L, preferably 40 to 50 g / L, boric acid 10 to 60 g / L, preferably 30 to 50 g / L, and a small amount of Additives, and p Η 0 · 5 to 6 · 0, preferably p Η 3.0 to 4 · 5), current density 1 to 10 A / dm2, preferably 2 to 4 A / dm2, liquid temperature 3 0 Electroplating under conditions of ~ 70 ° C, preferably 45 ~ 55 ° C, to form a first masking layer composed of -12- (10) (10) 1225768 1 ~ 8 μηι thick, and A first masking layer made of Cu with a thickness of 1 to 8 μm was formed thereon under the same conditions as above. Also, 'the formation order of these two masking layers can of course be reversed from the above, and in this case, both low frequency and high frequency electromagnetic waves can be masked. In addition, for example, when an alloy made of Fe and Ni is used instead of Ni to form the masking layer, the composition of the plating solution (nickel sulfate 40 to 400 g / liter, preferably 80 to 320 g / liter, nickel chloride 20 ~] 00 g / L, preferably 80 to 320 g / L, boric acid 0 to 70 g / L, preferably 35 to 50 g / L, ferrous sulfate 2 to 50 g / L, preferably 5 ~ 20 g / L, plus a small amount of additives, if necessary, and pH 2 ~ 5, preferably pH 3 ~ 3.8)), current density 1 ~ 15 A / dm2, preferably 4 ~ 6 A / dni2, liquid It can be formed by plating at a temperature of 30 to 70 ° C, preferably 50 to 60 ° C. Moreover, the masking layer of the present invention may be formed in three or more layers. For example, as described above, a first masking layer selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and these metals is formed, and a second masking layer composed of Cu is formed thereon, and then A third masking layer selected from the group consisting of alloys containing at least one of Ni, Co, Fe, and their metals is formed thereon. If such a structured electromagnetic wave shielding material is installed in an electric product, for example, the low-frequency electromagnetic wave generated inside the electric product can be shielded, and the electromagnetic wave to be penetrated into the interior from the outside can be effectively shielded. On the other hand, the masking layer of the present invention may be formed on both the front and back surfaces of the polymer film. For example, on any surface of a polymer film, the thickness is 1 μ] or less, and contains at least one kind of Ni, Co, Zn, Fe, Cu -13- (11) 1225768
' Ti ' Cr '彼等金屬之氧化物、氮化物及彼等金屬之合金 戶斤$ Ρ Ψ 出一種所構成的基底層爲以濺鍍法或蒸鍍法 之任一種方法形成一層或二層以上，並於其上形成含有至 少一種Ni、Co、Fe及彼等金屬之合金所組成群中選出一 種所構成的第一掩蔽層，再於其上形成Cu所構成的第二 掩蔽層’並且於該聚合物薄膜之另一表面，令厚度爲1 μηι 以下’且含有至少一種Ni、Co、Zn、Fe、Cu、Ti、Cr、 彼等金屬之氧化物、氮化物及彼等金屬之合金所組成群中 選出一種所構成的下述基底層爲以濺鍍法或蒸鍍法之任一 種方法形成一層或二層以上，並於其上形成含有至少一種 Ni、Co、Fe及彼等金屬之合金所組成群中選出一種所構 成之第三掩蔽層的態樣。又，其他態樣可列舉例如於聚合 物薄膜之任一者表面，令厚度爲1 μη以下，且含有至少 一種Ni、Co、Zn、Fe、Cu、Ti、C〗.、彼等金屬之氧化物 、氮化物及彼等金屬之合金所組成群中選出一種所構成的 後述基底層爲以濺鍍法或蒸鍍法之任一種方法形成一層或 二層以上，並於其上形成C u所構成的第一掩蔽層，再於 其上形成含有至少一種Ni、Co、Fe及彼等金屬之合金所 組成群中選出一種所構成的第二掩蔽層，並且於該聚合物 薄膜之另一表面’令厚度爲Ιμπι以下，且含有至少一種 Ni、Co、Zn、Fe、CU、Ti、Cr、彼等金屬之氧化物、氮 化物及彼等金屬之合金所組成群中選出一種所構成的後述 基底層爲以灘鑛法或蒸鑛法之任一種方法形成一'層或二層 以上，並於其上形成含有至少一種N i、C 〇、F e及彼等金 -14 - (12)1225768 屬之合金所組成群中選出一種所構成之第三掩蔽層的態樣 (基底層）'Ti' Cr 'The oxides, nitrides and alloys of other metals are used to form a base layer formed by one or two layers by either sputtering or vapor deposition. Above, a first masking layer composed of one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and these metals is formed thereon, and a second masking layer composed of Cu is formed thereon 'and On the other surface of the polymer film, the thickness is 1 μηι or less and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides, nitrides, and alloys of these metals One of the following base layers is selected from the group consisting of one or two or more layers formed by a sputtering method or a vapor deposition method, and at least one kind of Ni, Co, Fe, and other metals are formed thereon. An aspect of the third masking layer selected from the group consisting of alloys. In addition, other aspects may include, for example, the surface of any polymer film, the thickness of which is 1 μη or less, and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, C, and the oxidation of these metals. A base layer described later is selected from the group consisting of metals, nitrides, and alloys of these metals. One or two or more layers are formed by any of a sputtering method or a vapor deposition method, and a Cu substrate is formed thereon. The first masking layer is formed, and a second masking layer composed of one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe and these metals is formed on the other surface of the polymer film. 'Let a thickness of 1 μm or less and at least one of Ni, Co, Zn, Fe, CU, Ti, Cr, oxides, nitrides, and alloys of these metals be selected from the group described below. The basement layer is formed by one method of the beach ore method or the steam ore method to form one or more layers, and formed thereon containing at least one kind of Ni, C0, Fe and their gold-14-(12) 1225768 selected from the group consisting of alloys of the third The appearance of the masking layer (base layer)
本發明之基底層爲於形成前述掩蔽層時具有做爲一種 電極的作用，特別可用於電鍍法形成前述掩蔽層的情況。 又，該基底層亦具有做爲防止由該層於上層所形成之層， 即，前述掩蔽層和其他基底層等被氧化之防止氧化層的作 用。該掩蔽層爲經由空氣中之氧氣和聚合物薄膜中所含之 水份中溶存氧氣的作用而被經時性地氧化，如此，此些層 一旦被氧化，則與聚合物薄膜的密合力顯著減低並且容易 發生剝離等之不適。於此類情形中，具有防止氧化效果之 基底層若存在於此些層與聚合物薄膜之間，則有效捕捉由 聚合物薄膜往此些層方向擴散的前述氧氣，因此該氧氣爲 在到達此些層爲止被有效除去。具有此類防止氧化效果的 基底層，在掩蔽層和其他基底層爲以Fe和Cu所構成的情 況中特別有效’以其他金屬所構成的情況中則未必必要形 成。 此類基底層爲於前述聚合物薄膜之表面與掩蔽層之間 形成’且厚度爲1 μηι以下，且含有至少一種Ni、Co、Zn 、Fe、Cu、Ti、Cr、彼等金屬之氧化物、氮化物及彼等金 屬之合金所組成群中選出一種以濺鍍法或蒸鍍法之任一種 方法形成一層或二層以上。將厚度限定爲1 μηι以下，係 因作用爲電極和/或防止氧化層上若爲1 μηι則爲充分，並 -15- (13) (13) 1225768 不需要更高之厚度。又，將構成成分限定爲上述金屬類， 係因此些金屬顯示優良的導電性和防止氧化效果，並且適 於以濺鍍法和蒸鍍法形成。關於此些金屬類，主要以Fe 及C u爲做爲電極的作用優良，T i及C r爲做爲防止氧化 層的效果優良，又，N i、C 〇及Zn爲兼具兩者作用之特徵 。另一方面，形成手段採用濺鍍法和蒸鍍法上，係因並不 必要採用適於形成較厚層之電鍍法，且可將聚合物薄膜以 乾燥狀態原樣進行處理。又，此類基底層如上述可形成一 層或二層以上，於形成二層以上之情形中，主要爲於聚合 物薄膜之表面形成具有防止氧化效果的基底層，並於其上 形成作用爲電極的基底層爲佳。 此類基底層例如以濺鍍法形成時，其條件爲採用真空 度 IxlCT4 〜UxlO^Pa，較佳爲 1χ1〇·4 〜1.5xl〇_2Pa、輸 出功率0.5〜15kw、較佳爲0.8〜10kw、Ar氣1〇〇〜400cc/分 鐘、較佳爲100〜2 5 0cc/分鐘之條件爲佳。又，以蒸鍍法形 成時，其條件爲採用真空度1 X 1 0·5〜1 X 1 (T2Pa，較佳爲1 X10·4〜lxl(T3Pa、輸出功率10〜150kw、較佳爲40〜90kw 之條件爲佳。經由採用此類條件，則其厚度度可作成 20A 〜Ιμιη，較佳爲 50 〜3000A。 還有，於此類基底層上形成前述掩蔽層前，於該基底 層上以0.5〜50%、較佳爲3〜10%濃度之硫酸進行0.1〜3分 鐘、較佳爲0 · 5〜1 · 5分鐘酸活化處理令其活化爲佳。經由 進行此類酸活化處理，則在構成基底層之金屬例如被氧化 時（即該金屬爲Cii時被氧化變成氧化銅）亦可將其有效 -16- (14) (14)1225768 地還原或溶解除去，提高掩蔽層的密合性且可於基底層上 形成。 (防止變色層） 本發明之防止變色層爲於掩蔽層以Cu構成之情況（ 掩蔽層爲形成二個以上時最上層爲以Cu所構成之情況） 中形成，顯示出有效防止Cu被氧化變色之作用。因此， 於構成之掩蔽層正上方形成。此類防止變色層爲以Sn 、Ni、Co、Ti、Zn或Cr所形成，且其形成方法並無特別 ® ’通常依蒸鍍法、蒸鍍法或電鍍法則可形成。例如， @ Sn以電鍍法形成時，其條件可採用電鍍液之組成（Sn 10〜70克/公升、較佳爲20〜60克/公升、有機酸70〜2 00克 /公升、較佳爲90〜1 30克/公升，另外視需要配合之少量 添加齊!1 )、電流密度0.5〜10A/dm2、較佳爲卜2 A/dm2、 液溫1 0〜7 〇°C、較佳爲20〜30 °C等之條件。經由採用此類 ί木則其厚度可作成0 · 0 1〜2 μ m、較佳爲〇 . 1〜1 μ ηι。 以下，列舉實施例更詳細說明本發明，但本發明不被 其限定。 (實施例1 ) 本實施例爲關於聚合物薄膜表面形成基底層，並於其 & ^成Ni和Fe所形成合金所構成之掩蔽層的電磁波掩蔽 材料。以下，參照圖〗予以說明。 將做爲聚合物薄膜101之厚度25 μ1Ώ的PET薄膜切成 (15) (15)1225768 寬2 5 0mm、長度l〇〇m後，以不銹鋼製之型芯予以捲取， 並且裝配至濺鍍裝置室內的送出軸’並將其前端部以附有 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後’以真空栗將 室內作成4 X 1 Ο·2 P a真空狀態後，令附有冷卻裝置之驅動 鼓、送出軸及捲取軸分別以聚合物薄膜爲以〇·4πι/分鐘之 速度捲取般迴轉。其後，以加熱器令溫度爲1】〇 °C ’且於 碰撞處理部爲於氬氣120 c c/分鐘、輸出功率〇.9 kw之條件 下進行碰撞處理，令聚合薄膜之含水量爲未滿0·01%般進 行真空乾燥。 接著，於上述室內之第一標的及第二標的分別裝配 Ni，且使用氬氣各200cc/分鐘、輸出功率各8kw之高磁 波磁控管濺鍍N i，於前述真空乾燥處理之聚合物薄膜1 〇 1 表面上形成厚度1 8 00A的基底層102。 其後，將如此形成基底層之聚合物薄膜由濺鍍裝置中 取出，接著安裝至連續電鍍裝置。於充塡5 %硫酸之電鍍 浴中，將上述聚合物薄膜以l.〇m/分鐘之移動速度連續浸 漬1分鐘，使得上述基底層進行酸活化處理。其次，重覆 水洗2回後，於上述裝置之電鍍浴中充塡電鍍液（由硫酸 鎳24 0克/公升、氯化鎳50克/公升、硼酸40克/公升、硫 酸亞鐵 20 克 / 公升及 Ferroallog FA(Ebaraudilite (股） 製）70cc/彳所構成，ΡΗ3·8 )，並將上述聚合物薄膜以 1 .〇m/分鐘之移動速度連續浸漬，且於液溫55t，電流密 度4 A/dm2之條件下電鍍5分鐘，則可於前述基底層102 上形成厚度4.3μηι之Ni和Fe所組成合金（Ni : Fe = 70 : -18- (16)1225768 3 〇 )所構成的掩蔽層I 〇 3。接著，重覆水洗3回 機瀝水後以6 (TC乾燥1分鐘，取得圖1所示之 電磁波掩蔽材料。 將如此處理所得之電磁波掩蔽材料，使用移 一邊照射100〜2 00赫之電磁波，一邊以示波器進 ’於未照射電磁波之面並未檢測出1 00〜200赫的 因此，上述所得之電磁波掩蔽材料可做爲低周波 磁波掩蔽材料使用於各種用途。又，該電磁波掩 爲可撓性亦優良，故於輕薄短小化之各種製品中 使用。 (實施例2 ) 本實施例爲關於在聚合物薄膜之表面形成具 化效果的基底層，並於其上形成作用爲電極的第 層’於其上形成由C u所構成之掩蔽層的電磁波 。以下，參照圖2予以說明。 將做爲聚合物薄膜201之厚度25 μηι的PET 寬2 5 0mm、長度l〇〇m後，以不銹鋼製之型芯予 並且裝配至濺鍍裝置室內的送出軸，並將其前端 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後，以 室內作成4 X 1 0_2Pa的真空狀態後，令附有冷卻 動鼓、送出軸及捲取軸分別以聚合物薄膜爲以C 之速度捲取般迴轉。其後，以加熱器令溫度爲1 於碰撞處理部爲於氬氣1 2 0 c c /分鐘、輸出功率〇 . ，以吹風 本發明的 相振動器 行測定時 電磁波。 數用之電 蔽材料因 亦可廣泛 有防止氧 二層基底 掩蔽材料 薄膜切成 以捲取， 部以附有 真空泵將 裝置之驅 .4 m /分鐘 l〇°C ，且 9 k w之條 -19- (17) (17)1225768 件下進行碰撞處理，令聚合物薄膜之含水量爲未滿0.0 1 % 般進行真空乾燥。 接著，於上述室內之第一標的裝配Cr，且於氬氣 1 0 0 c c /分鐘、輸出功率2.2 k w之條件下將C r灑鑛’於則 述真空乾燥處理之聚合物薄膜201表面上形成厚度70 A 具有防止氧化效果的基底層204。 接著，於上述室內之第二標的裝配 Cu，且於氬氣 200cc/分鐘、輸出功率9kw之條件下將Cu濺鍍，於前述 具有防止氧化效果之基底層204上形成厚度2100A之作 用爲電極的第二基底層202。 其後，將如此形成基底層之聚合物薄膜由濺鍍裝置中 取出，接著安裝至連續電鍍裝置。於充塡5 %硫酸之電鍍 浴中，將上述聚合物薄膜以1 · 〇m/分鐘之移動速度連續浸 漬1分鐘，使得上述第二層基底層2 0 2進行酸活化處理。 其次’重覆水洗2回後，於上述裝置之電鍍浴中充塡電鍍 液（由硫酸銅9 0克/公升、硫酸1 5 0克/公升、氯5 0 p p m 及TopIut]na 380H(奧野製藥工業（股）製）；[〇cc /公升所 構成）’並將上述聚合物薄膜以1 · 0 m /分鐘之移動速度連 續浸漬’且於液溫29°C，由流密度4A/dm2之條件下電鍍 4分鐘’則可於前述第二基底層2〇2上形成厚度3·5μηι之 C11所構成的掩蔽層2 0 3。接著，重覆水洗3回，以吹風機 瀝水後以6 0 〇 °C乾燥1分鐘，取得圖2所示之本發明的電 磁波掩蔽材料。 將如此處理所得之電磁波掩蔽材料，使用移相振動器 -20- (18)1225768 一邊照射1〜2千兆赫之電磁波’一邊以示波器進行測定時 ，於未照射電磁波之面並未檢測出1〜2千兆赫的電;磁波。 因此，上述所得之電磁波掩蔽材料可做爲高周波數用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可撓性優良，故於輕薄短小化之各種製品中亦可廣泛使 用。The base layer of the present invention functions as an electrode when the aforementioned masking layer is formed, and is particularly useful when the aforementioned masking layer is formed by electroplating. In addition, the base layer also has a role as an oxidation preventing layer for preventing the mask layer and other base layers from being oxidized as a layer formed by the layer above the upper layer. The masking layer is oxidized over time by the action of oxygen in the air and dissolved oxygen in the water contained in the polymer film. In this way, once these layers are oxidized, their adhesion to the polymer film is significant. Reduces discomfort such as peeling. In such cases, if a base layer with an anti-oxidation effect is present between these layers and the polymer film, it can effectively capture the aforementioned oxygen diffused from the polymer film in the direction of these layers, so the oxygen is arriving here These layers have been effectively removed. The underlayer having such an oxidation prevention effect is particularly effective in the case where the masking layer and other underlayers are made of Fe and Cu ', and it is not necessarily formed in the case of other metals. Such a base layer is formed between the surface of the aforementioned polymer film and the masking layer and has a thickness of 1 μm or less, and contains at least one kind of oxides of Ni, Co, Zn, Fe, Cu, Ti, Cr, and other metals From the group consisting of nitrides, and alloys of these metals, one or two or more layers may be formed by any of a sputtering method or an evaporation method. The thickness is limited to 1 μm or less because it is sufficient to act as an electrode and / or prevent the oxide layer from being 1 μm, and -15- (13) (13) 1225768 does not require a higher thickness. In addition, the constituent components are limited to the above-mentioned metals because these metals exhibit excellent electrical conductivity and oxidation prevention effects, and are suitable for formation by sputtering and vapor deposition. Regarding these metals, mainly Fe and Cu are used as electrodes, and T i and C r are used as oxides, and Ni, C 0 and Zn have both functions. Characteristics. On the other hand, the sputtering method and the vapor deposition method are used as the formation means, because it is not necessary to use a plating method suitable for forming a thick layer, and the polymer film can be processed as it is. In addition, such a base layer can form one or more layers as described above. In the case where two or more layers are formed, a base layer having an oxidation prevention effect is mainly formed on the surface of the polymer film, and an electrode is formed thereon. The base layer is preferred. When such a base layer is formed by a sputtering method, for example, the conditions are a vacuum degree of IxlCT4 to UxlO ^ Pa, preferably 1x10.4 · 1.5 to 1.5xl0_2Pa, an output power of 0.5 to 15kw, and preferably 0.8 to 10kw. The conditions for Ar gas being 100 to 400 cc / minute, preferably 100 to 250 cc / minute are preferable. In the case of forming by a vapor deposition method, a vacuum condition of 1 X 1 0 · 5 to 1 X 1 (T2Pa, preferably 1 X10 · 4 to 1 xl (T3Pa, output power 10 to 150 kw, preferably 40) The condition of ~ 90kw is better. By adopting such conditions, the thickness can be made from 20A to 1μιη, preferably from 50 to 3000A. Also, before forming the aforementioned masking layer on such a base layer, on the base layer An acid activation treatment with sulfuric acid at a concentration of 0.5 to 50%, preferably 3 to 10%, for 0.1 to 3 minutes, and preferably 0.5 to 1.5 minutes, makes the activation better. By performing such an acid activation treatment, Then, when the metal constituting the base layer is oxidized (that is, the metal is oxidized into copper oxide when it is Cii), it can also be effectively reduced or dissolved by -16- (14) (14) 1225768 to improve the density of the masking layer. It can be formed on the base layer. (Discoloration prevention layer) The discoloration prevention layer of the present invention is used when the masking layer is made of Cu. (When the masking layer is made of two or more layers, the top layer is made of Cu.) It is formed to show the effect of effectively preventing Cu from being discolored by oxidation. Therefore, it is a masking layer for the formation It is formed on top. This type of discoloration prevention layer is formed of Sn, Ni, Co, Ti, Zn, or Cr, and the formation method is not special ® 'It is usually formed by vapor deposition method, vapor deposition method, or electroplating method. For example, When @Sn is formed by electroplating, the conditions can adopt the composition of the plating solution (Sn 10 ~ 70 g / L, preferably 20 ~ 60 g / L, organic acid 70 ~ 200 g / L, preferably 90 ~ 1 30 g / L, and add a small amount if necessary! 1), current density 0.5 ~ 10A / dm2, preferably 2 A / dm2, liquid temperature 1 0 ~ 7 0 ° C, preferably 20 ~ Conditions such as 30 ° C. By using such wood, the thickness can be made into 0 · 0 1 ~ 2 μm, preferably 0.1 ~ 1 μ η. The present invention will be described in more detail below with examples, but The present invention is not limited thereto. (Example 1) This example is an electromagnetic wave shielding material that forms a base layer on the surface of a polymer film and forms a masking layer made of an alloy formed of Ni and Fe. Hereinafter, Illustrate with reference to the figure. Cut 25 μ1Ώ PET film as the polymer film 101 into (15) (15) 1225768 width 2 50 mm After a length of 100 m, it was wound up with a core made of stainless steel, and it was assembled into a delivery shaft in the sputtering device chamber, and its front end was attached to the winding shaft with a polyimide tape with an adhesive attached. After that, the chamber was made into a vacuum state of 4 X 1 0 · 2 Pa with a vacuum pump, and the driving drum, the sending shaft, and the winding shaft with a cooling device were respectively made of polymer film at a speed of 0.4 μm / minute. Take-up. Thereafter, the heater was used to set the temperature to 1] 0 ° C and the collision treatment was performed under the conditions of 120 cc / min of argon gas and 0.9 kw of output power, so that the water content of the polymer film was not Vacuum drying was performed at a total of 0.01%. Next, Ni was installed on the first target and the second target in the room, and Ni was sputtered using high magnetic wave magnetrons with 200cc / min of argon and 8kw of output power. The polymer films were vacuum-dried. A base layer 102 having a thickness of 1 800 A is formed on the surface. After that, the polymer film thus formed with the base layer was taken out of the sputtering apparatus, and then mounted to a continuous plating apparatus. In a plating bath filled with 5% sulfuric acid, the above polymer film was continuously immersed for 1 minute at a moving speed of 1.0 m / min, so that the above-mentioned base layer was subjected to acid activation treatment. Secondly, after washing twice, the electroplating bath in the above device was filled with a plating solution (from 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, and 20 g of ferrous sulfate / Liter and Ferroallog FA (made by Ebaraudilite (stock)) 70cc / 彳, PΗ3 · 8), and the polymer film was continuously immersed at a moving speed of 1.0m / min, and the liquid temperature was 55t, and the current density was 4 Under the condition of A / dm2 plating for 5 minutes, a mask consisting of an alloy of Ni and Fe (Ni: Fe = 70: -18- (16) 1225768 3 〇) with a thickness of 4.3 μm can be formed on the aforementioned base layer 102. Layer I 03. Next, it was repeatedly washed with water 3 times and drained, and dried at 6 ° C for 1 minute to obtain the electromagnetic wave masking material shown in Fig. 1. The electromagnetic wave masking material thus processed was irradiated with an electromagnetic wave of 100 to 200 Hz while moving. The oscilloscope is used to detect 100 to 200 Hz on the surface that is not irradiated with electromagnetic waves. Therefore, the electromagnetic wave masking material obtained above can be used as a low-frequency magnetic wave masking material for various purposes. Furthermore, the electromagnetic wave masking is flexible. It is also excellent, so it is used in various products that are thin, thin, and short. (Example 2) This example is about forming a base layer with a chemical effect on the surface of a polymer film, and forming a second layer that functions as an electrode on it. An electromagnetic wave of a masking layer made of Cu is formed thereon. Hereinafter, it will be described with reference to FIG. 2. A 25 μm-thick PET film having a thickness of 25 μm and a length of 100 m as a polymer film 201 is made of stainless steel. The manufactured core was pre-assembled to the delivery shaft in the sputtering equipment room, and the polyimide tape of the front end adhesive was installed to the take-up shaft. After that, a vacuum of 4 X 1 0_2Pa was made in the room. After the state, the cooling drum, the delivery shaft and the take-up shaft are respectively rotated with the polymer film as the speed of C. After that, the temperature is set to 1 by the heater and the argon by the heater. 20 cc / min, output power 0. The electromagnetic wave is measured by blowing the phase vibrator of the present invention. The electric shielding material used for the data can also be widely used to prevent the oxygen two-layer substrate shielding material film from being cut into coils. Drive the device with a vacuum pump at .4 m / min at 10 ° C and 9 kw under -19- (17) (17) 1225768 for collision treatment, so that the water content of the polymer film is less than 0.0 Vacuum drying is performed at 1%. Next, the first target of Cr is assembled in the above room, and C r is spattered under the conditions of 100 cc / min of argon and output power of 2.2 kw. On the surface of the polymer film 201, a base layer 204 having an anti-oxidation effect with a thickness of 70 A was formed. Next, Cu was assembled as the second target in the above room, and Cu was sputtered under the conditions of 200 cc / min of argon and an output of 9 kw. On the aforementioned substrate with anti-oxidation effect A second base layer 202 serving as an electrode having a thickness of 2100 A was formed on 204. Thereafter, the polymer film thus formed as the base layer was taken out of the sputtering apparatus, and then installed to a continuous plating apparatus. The plating was filled with 5% sulfuric acid In the bath, the above polymer film was continuously immersed for 1 minute at a moving speed of 1.0 m / min, so that the second base layer 202 was subjected to acid activation treatment. Next, after repeated washing for 2 times, the above device was used. The electroplating bath is filled with an electroplating bath (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of chlorine, and TopIut] na 380H (manufactured by Okuno Pharmaceutical Co., Ltd.); [0cc / L (Constructed) 'and continuously dip the above polymer film at a moving speed of 1.0 m / min' and electroplating for 4 minutes at a liquid temperature of 29 ° C and a flow density of 4A / dm2 'can be used in the second A masking layer 203 made of C11 having a thickness of 3.5 μm was formed on the base layer 202. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 600 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention shown in FIG. 2. When the electromagnetic shielding material obtained in this way was measured using an oscilloscope while using a phase-shift vibrator-20- (18) 1225768 while irradiating electromagnetic waves of 1 to 2 GHz, 1 ~ 2 gigahertz of electricity; magnetic waves. Therefore, the electromagnetic wave masking material obtained as described above can be used as an electromagnetic wave masking material for high frequency applications in various applications. In addition, since this electromagnetic shielding material is excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter.
(實施例3 ) 本實施例爲關於在聚合物薄膜之表面形成具有防止氧 化效果的基底層，並於其上形成作用爲電極的第二層基底 層，於其上形成由· C u所構成之掩蔽層，再於其上形成防 止變色層的電磁波掩蔽材料。以下，參照圖3予以說明。(Example 3) This example is about forming a base layer having an oxidation prevention effect on the surface of a polymer film, and forming a second base layer functioning as an electrode on the surface of the polymer film. A masking layer, and an electromagnetic wave masking material for preventing a discoloration layer is formed thereon. Hereinafter, it will be described with reference to FIG. 3.
首先，形成Cu所構成之掩蔽層爲止爲完全同上述實 施例2處理並且取得形成掩蔽層3 0 3的聚合物薄膜3 0 1。 接著，於連續電鍍裝置之電鍍浴中充塡電鍍液（由s n 5 5 克/公升，做爲有機酸之Metas AM ( Uken工業（股）製 )120克/公升及SBS-R(Uken工業（股）製60cc /公升所 構成），將上述聚合物薄膜以1 · 〇 m /分鐘之移動速度連續 浸漬，且於液溫30°C、電流密度2A/dm2之條件下電鍍1 分鐘’則可於前述掩蔽層3 0 3上形成厚度〇 · 6 μηι之S η所 構成的防止變色層3 0 5。接著，重覆水洗3回，以吹風機 源水後以6 0 °C乾燥1分鐘，取得圖3所示之本發明的電 磁波掩蔽材料。 將如此處理所得之電磁波掩蔽材料，使用移相振動器 -21 - (19) (19)1225768 —邊照射1〜2千兆赫之電磁波，一邊以示波器進行測定時 ’於未照射電磁波之面並未檢測出1〜2千兆赫的電磁波。 ® 1ft ’ ±述所得之電磁波掩蔽材料可做爲高周波數用之電 石兹波蔽材料使用於各種用途。又，該電磁波掩蔽材料因 胃α ί堯性亦優良，故於輕薄短小化之各種製品中可廣泛使 用0 (實施例4 ) 本實施例爲關於在聚合物薄膜之表面形成具有防止氧 化效果的基底層，並於其上形成三層掩蔽層的電磁波掩蔽 材料。以下，參照圖4予以說明。 將做爲聚合物薄膜401之厚度25 μιη的PET薄膜切成 寬2 5 0mm、長度i〇〇m後，以不銹鋼製之型芯予以捲取， 並且裝配至濺鍍裝置室內的送出軸，並將其前端部以附有 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後，以真空泵將 室內作成4 X 1 〇〃Pa真空狀態後，令附有冷卻裝置之驅動 鼓、送出軸及捲取軸分別以聚合物薄膜爲以0.4m/分鐘之 速度捲取般迴轉。其後，以加熱器令溫度爲1 1 0 °C，且於 碰撞處理部爲於氬氣120 c c/分鐘、輸出功率〇.9kw之條件 下進行碰撞處理，令聚合薄膜之含水量爲未滿0.0 1 %般進 行真空乾燥。 接著，於上述室內之第一標的及第二標的分別裝配 Ni，且使用氬氣各200cc/分鐘、輸出功率各8kw之高磁 波磁控管濺鍍Ni，於前述真空乾燥處理之聚合物薄膜40 1 -22- (20) (20)1225768 表面上形成厚度1 8 00A之具有防止氧化效果的基底層。 其後’將如此形成具有防止氧化效果之基底層之聚合 物薄膜由濺鍍裝置中取出，接著安裝至連續電鍍裝置。於 s亥裝置之電銳浴中充塡電鍍液（由硫酸鎳240克/公升、 氯化鎳50克/公升、硼酸4〇克/公升、硫酸亞鐵2〇克/公 升及 Feri’oallog FA ( Ebaraudilite (股）製）7〇cc/ /所構 成’ PH3.8)，並將上述聚合物薄膜以kOm/分鐘之移動速 度連續浸漬’且於液溫55 °C，電流密度4A/dm2之條件下 電鍍5分鐘，則可於前述具有防止氧化效果之基底層4 〇 4 上形成厚度4 · 5 μιΏ之N i和F e所組成合金所構成的第—掩 蔽層4 0 3 a。接著，重覆水洗3回，以吹風機瀝水後以6 〇 °C乾燥1分鐘。 其次，於該連續電鍍裝置之電鍍浴中充塡電鍍液（由 硫酸銅9 0克/公升、硫酸1 5 0克/公升、氛5 0 p p m及 Toplutina 380 H(奧野製藥工業（股）製）10cc/公升所構 成），並將上述聚合物薄膜以1 · 〇 m /分鐘之移動速度連續 浸漬，且於液溫2 9 °C，由流密度4 A / d m 2之條件下電鍍4 分鐘，則可於前述第一掩蔽層4 03 a上形成厚度3.5 μηι之 C11所構成的第二掩蔽層4 03 b。接著，重覆水洗3回，以 吹風機瀝水後以6 0 0 °C乾燥1分鐘。 更且，於該連續電鍍裝置之電鍍浴中充塡電鍍液（由 硫酸鎳240克/公升、氯化鎳50克/公升、硼酸40克/公升 、硫酸亞鐵20克/公升及Ferroallog FA (前述）70cc/f所 構成，ρΗ3·8)，並將上述聚合物薄膜以l.〇m/分鐘之移動 -23- (21) (21)1225768 速度連續浸漬，且於液溫5 5 °C，電流密度4 A / d m2之條件 下電鍍5分鐘，則可於前述第二掩蔽層4 03 b上形成厚度 4.4 μ m之N i和F e所組成合金所構成的第三掩蔽層4 〇 3 c。 接著，重覆水洗3回，以吹風機瀝水後以6 0 °C乾燥1分 鐘，取得圖4所示之本發明的電磁波掩蔽材料。 將如此處理所得之電磁波掩蔽材料，使用移相振動器 一邊分別照射1 〇 〇〜2 0 0赫及1〜2千兆赫之電磁波，一邊以 示波器進行測定時，於未照射電磁波之面並未檢測出 1 0 0〜2 0 0赫及1〜2千兆赫兩者的電磁波。因此，上述所得 之電磁波掩蔽材料可做爲低周波數及高周波數兩者用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可撓性亦優良，故於輕薄短小化之各種製品中亦可廣泛 使用。 (實施例5 ) 本實施例爲關於在聚合物薄膜之表裏兩面形成掩蔽層 的電磁波掩蔽材料。以下，參照圖5予以說明。 將做爲聚合物薄膜501之厚度25μηι的PET薄膜切成 寬2 5 0mm '長度l〇〇m後，以不銹鋼製之型芯予以捲取， 並且裝配至濺鐽裝置室內的送出軸，並將其前端部以附有 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後，以真空泵將 室內作成4 X 1 0_2Pa真空狀態後，令附有冷卻裝置之驅動 鼓、送出軸及捲取軸分別以聚合物薄膜爲以〇.4m/分鐘之 速度捲取般迴轉。其後，以加熱器令溫度爲Π 〇 °C，且於 -24 - (22) (22)1225768 碰撞處理部爲於氬氣I 20cc/分鐘、輸出功率〇.9kw之條件 下進行碰撞處理，令聚合薄膜之含水量爲未滿0.01%般進 行真空乾燥。 接著，於上述室內之第一標的及第二標的分別裝配 Ni，且使用氬氣各2 0 0cc/分鐘、輸出功率各8kw之高磁 波磁控管濺鍍Ni，於前述真空乾燥處理之聚合物薄膜5 0 1 表面上形成厚度1 8 00A之具有防止氧化效果的基底層504 〇 其後，將如此形成具有防止氧化效果之基底層之聚合 物薄膜由濺鍍裝置中取出，接著安裝至連續電鍍裝置。於 充塡5%硫酸之電鍍浴中，將上述聚合物薄膜以i.Om/分鐘 之移動速度連續浸漬1分鐘，使得上述具有防止氧化效果 之基底層進行酸活化處理。其次，重覆水洗2回後，於上 述裝置之電鍍浴中充塡電鍍液（由硫酸銅90克/公升、硫 酸150克/公升、氯50ppm及丁 oplutina 380H (奧野製藥 工業（股）製）10cc/公升所構成），並將上述聚合物薄 膜以1 .0m/分鐘之移動速度連續浸漬，且於液溫29 °C，由 流密度4A/dm2之條件下電鍍4分鐘，則可於前述具有防 止氧化效果之基底層5 04上形成厚度3·5μηι之Cu所構成 的第一掩蔽層5 0 3 a。接著，重覆水洗3回，以吹風機瀝 水後以6 0 0 °C乾燥1分鐘。 其次於該連續電鍍裝置之電鍍浴中充塡電鍍液（由硫 酸鎳24 0克/公升、氯化鎳50克/公升、硼酸40克/公升、 硫酸亞鐵 2 0 克 / 公升及 F e 1. r 〇 a 11 〇 g F A ( E b a 1. a u d i 1 i t e (股 -25- (23)1225768 )製）70cc/彳所構成，ρΗ3·8 )，並將上述聚合物薄 1.0m/分鐘之移動速度連續浸漬，且於液溫55°C，電 度4A/dm2之條件下電鍍5分鐘，則可於前述第一掩 5 0 3 a上形成厚度4·5μηι之Ni和Fe所組成合金所構 第二掩蔽層503b。接著，更覆水洗3回，以吹風機 後以6 0 °C乾燥1分鐘。 更且，對於如此形成第二掩蔽層之聚合物薄膜爲 續處理另一面，乃再度安裝至濺鍍裝置。其次，對該 裝置之室內的第一標的及第二標的分別裝配Ni，且 氬氣各 200cc/分鐘、輸出功率各 8kw之高磁波磁控 鍍Ni，於前述聚合物薄膜501之另一表面上形成 1800A的基底層502。 其後，將如此形成基底層之聚合物薄膜由潑鍍裝 取出，接著安裝至連續電鍍裝置。於充塡5%硫酸之 浴中，將上述聚合物薄膜以l.〇m/分鐘之移動速度連 漬1分鐘，使得上述基底層進行酸活化處理。其次， 水洗2回後，於上述裝置之電鍍浴中充塡電鍍液（由 鎳24 0克/公升、氯化鎳50克/公升、硼酸40克/公升 酸亞鐵 20 克 / 公升及 Ferroallog FA(Ebaraudilite( 製）70cc"所構成，PH3.8 )，並將上述聚合物薄 〗.〇m/分鐘之移動速度連續浸瀆，且於液溫55°C，電 度4 A/dm2之條件下電鍍5分鐘，則可於前述基底層 上形成厚度4 · 3 μ m之N i和F e所組成合金（N i : F e = 3 〇 )所構成的第三掩蔽層5 0 3 c。接著，重覆水洗3 膜以 流密 蔽層 成的 瀝水 了連 濺鍍 使用 管濺 厚度 置中 電鑛 續浸 重覆 硫酸 、硫 股） 膜以 流密 502 70 : 回， -26 - (24)1225768 以吹風機瀝水後以6 0 °C乾燥1分鐘，取得圖5所示之本 發明的電磁波掩蔽材料。First, until a masking layer made of Cu is formed, it is completely treated in the same manner as in Example 2 above, and a polymer film 3 01 is formed to form a masking layer 3 0 3. Next, the plating bath of a continuous plating apparatus was filled with a plating solution (made of Sn 5 5 g / L, Metas AM (made by Uken Industrial Co., Ltd.) 120 g / L as an organic acid, and SBS-R (Uken Industrial ( 60cc / liter), the polymer film is continuously dipped at a moving speed of 1.0m / min, and electroplated for 1 minute at a liquid temperature of 30 ° C and a current density of 2A / dm2. A discoloration preventing layer 3 of 0.5 μm thick S η was formed on the masking layer 3 0 3, and then washed three times with water, and then dried with a hair dryer source water at 60 ° C for 1 minute to obtain The electromagnetic wave masking material of the present invention shown in Fig. 3. The electromagnetic wave masking material obtained in this way is used with a phase-shift vibrator-21-(19) (19) 1225768-while irradiating electromagnetic waves of 1 to 2 GHz, using an oscilloscope During the measurement, '1 to 2 gigahertz of electromagnetic waves were not detected on the side where the electromagnetic waves were not irradiated. ® 1ft' ± The electromagnetic wave shielding material described above can be used as a calcium carbide shielding material for high-frequency applications and used in various applications. , The electromagnetic wave masking material due to gastric α It is also excellent, so it can be widely used in various thin and light products (Example 4) This example is about forming a base layer with an anti-oxidation effect on the surface of a polymer film, and forming three masking layers on it A shielding material for electromagnetic waves. Hereinafter, it will be described with reference to FIG. 4. A 25 μm thick PET film as a polymer film 401 is cut into a width of 250 mm and a length of 100 mm, and then wound with a stainless steel core. And assembled to the delivery shaft in the sputtering equipment room, and the front end of the sputtering shaft was attached to the take-up shaft with a polyimide tape with an adhesive. Then, the room was made into a vacuum of 4 X 1 〇〃Pa by a vacuum pump. After that, the driving drum, the feeding shaft and the winding shaft with the cooling device were rotated around the polymer film at a speed of 0.4m / min. After that, the temperature was set to 110 ° C by a heater. Then, the collision treatment was performed under the conditions of 120 cc / min of argon gas and 0.9 kw of output power, and the polymer film was dried under vacuum so that the water content of the polymer film was less than 0.0 1%. First and second Ni was separately assembled, and Ni was sputter-plated using a high magnetic wave magnetron with 200cc / min of argon and 8kw of output power, and the polymer film 40 1 -22- (20) (20) 1225768 was vacuum-treated on the surface. A base layer having an anti-oxidation effect having a thickness of 1 800 A is formed thereon. Thereafter, the polymer film thus formed with the base layer having an anti-oxidation effect is taken out of the sputtering device, and then mounted to a continuous electroplating device. The electroplating bath is filled with electroplating bath (consisting of 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and Feri'oallog FA (Ebaraudilite (shares ）) 70 cc / / 'PH3.8), and the polymer film was continuously immersed at a moving speed of kOm / min' and electroplated at a liquid temperature of 55 ° C and a current density of 4A / dm2 5 In a minute, a first masking layer 4 0 3 a made of an alloy of Ni and Fe with a thickness of 4.5 μm can be formed on the base layer 4 0 4 having the effect of preventing oxidation. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 60 ° C for 1 minute. Next, the electroplating bath of the continuous electroplating device was filled with a plating solution (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of atmosphere, and Toplutina 380 H (manufactured by Okuno Pharmaceutical Co., Ltd.) 10cc / liter), and the polymer film was continuously immersed at a moving speed of 1.0m / min, and electroplated at a liquid temperature of 29 ° C for 4 minutes at a flow density of 4 A / dm2, Then, a second masking layer 4 03 b made of C11 having a thickness of 3.5 μm can be formed on the first masking layer 4 03 a. Then, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 600 ° C for 1 minute. Furthermore, the electroplating bath of the continuous electroplating device was filled with a plating solution (consisting of 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and Ferroallog FA ( The above) is composed of 70cc / f, ρΗ3 · 8), and the polymer film is continuously immersed at a speed of 1.0 m / min-23- (21) (21) 1225768, and the liquid temperature is 5 5 ° C And electroplating at a current density of 4 A / d m2 for 5 minutes, a third masking layer 4 composed of an alloy of Ni and Fe can be formed on the aforementioned second masking layer 4 03 b with a thickness of 4.4 μm. 3 c. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 60 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention shown in FIG. 4. The electromagnetic wave masking material obtained in this way was measured with an oscilloscope while irradiating electromagnetic waves of 1000 to 2000 Hz and 1 to 2 gigahertz using a phase shift vibrator, but it was not detected on the surface that was not irradiated with electromagnetic waves. Electromagnetic waves of 100 to 200 Hz and 1 to 2 gigahertz are emitted. Therefore, the electromagnetic wave masking material obtained above can be used as an electromagnetic wave masking material for both low-frequency and high-frequency waves, and can be used in various applications. In addition, since the electromagnetic wave shielding material is also excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter. (Embodiment 5) This embodiment relates to an electromagnetic wave masking material in which a masking layer is formed on both surfaces of a polymer film. Hereinafter, it will be described with reference to FIG. 5. A 25 μm-thick PET film as a polymer film 501 was cut into a width of 250 mm and a length of 100 m, and was wound with a core made of stainless steel, and assembled into a delivery shaft in a sputtering device chamber. The front end is attached to the take-up shaft with a polyimide tape with an adhesive. After that, the chamber was made into a vacuum of 4 X 1 0_2 Pa by a vacuum pump, and the driving drum, the sending shaft, and the winding shaft with a cooling device were respectively rotated around the polymer film at a speed of 0.4 m / min. After that, the heater was used to make the temperature Π 0 ° C, and the collision processing was performed under the conditions of -24-(22) (22) 1225768 under the condition of argon I 20cc / min and output power 0.9kw. The polymer film was vacuum dried so that the water content of the polymer film was less than 0.01%. Next, Ni was assembled on the first target and the second target in the above room, and Ni was sputter-plated using high magnetic wave magnetrons each having an argon gas of 200 cc / min and an output power of 8 kw. The film 5 0 1 was formed with a base layer 504 having an oxidation preventing effect to a thickness of 1 800 A. Thereafter, the polymer film thus formed with the base layer having an oxidation preventing effect was taken out of the sputtering apparatus, and then mounted to continuous plating. Device. In the electroplating bath filled with 5% sulfuric acid, the above polymer film was continuously immersed for 1 minute at a moving speed of i. Om / minute, so that the above-mentioned base layer having an oxidation prevention effect was subjected to acid activation treatment. Next, after washing twice, the electroplating bath was filled with electroplating solution (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of chlorine, and dioplutina 380H (manufactured by Okuno Pharmaceutical Co., Ltd.)) 10cc / liter), and continuously dip the above polymer film at a moving speed of 1.0m / min, and electroplating for 4 minutes at a liquid temperature of 29 ° C and a flow density of 4A / dm2, the above A first masking layer 50 3 a made of Cu having a thickness of 3.5 μm is formed on the base layer 504 having an oxidation prevention effect. Then, it was repeatedly washed with water 3 times, drained with a hair dryer, and then dried at 60 ° C for 1 minute. Next, the plating bath of the continuous plating apparatus was filled with a plating solution (consisting of 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and F e 1 r 〇a 11 〇g FA (E ba 1. audi 1 ite (made by -25- (23) 1225768)) 70cc / 彳, ρΗ3 · 8), and the above polymer is 1.0m / min thin Continuous immersion at a moving speed, and electroplating for 5 minutes at a liquid temperature of 55 ° C and an electric power of 4A / dm2, an alloy of Ni and Fe with a thickness of 4.5 μm can be formed on the first mask 5 0 3 a. Structure a second masking layer 503b. Then, it was washed 3 times with water, dried with a hair dryer and then dried at 60 ° C for 1 minute. Furthermore, the polymer film thus formed with the second masking layer is further processed on the other side and is again mounted to the sputtering device. Secondly, the first and second targets of the device are equipped with Ni, and high magnetic wave magnetron plating of 200 cc / min and 8 kw of argon is applied on the other surface of the polymer film 501. A base layer 502 of 1800A is formed. Thereafter, the polymer film thus formed as the base layer is taken out by sputtering and then mounted on a continuous plating apparatus. In a bath filled with 5% sulfuric acid, the above polymer film was continuously stained at a moving speed of 1.0 m / min for 1 minute, so that the above-mentioned base layer was subjected to acid activation treatment. Secondly, after 2 times of water washing, fill the plating bath of the above apparatus with electroplating bath (consisting of 240 g / liter of nickel, 50 g / liter of nickel chloride, 40 g of boric acid / 20 g / liter of ferrous acid ferrite / liter and Ferroallog FA (Constructed by Ebaraudilite (manufactured by) 70cc ", PH3.8), and continuously dipping the polymer at a speed of .0m / minute, and at a liquid temperature of 55 ° C and an electric power of 4 A / dm2 A lower masking layer 5 0 3 c composed of an alloy of Ni and F e (N i: F e = 3) with a thickness of 4 · 3 μm can be formed on the aforementioned base layer for 5 minutes under the electroplating. Next, the water was washed repeatedly. The film was drained with a flow-tight masking layer. The continuous sputtering was performed using a tube-sputtered thickness. ) 1225768 Drain with a hair dryer and dry at 60 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention as shown in FIG. 5.
將如此處理所得之電磁波掩蔽材料，使用移相振動器 —邊分別照射10 0〜2 0 0赫及】〜2千兆赫之電磁波，一邊以 示波器進行測定時，於未照射電磁波之面並未檢測出 1 0 0〜2 0 G赫及1〜2千兆赫兩者的電磁波。因此，上述所得 之電磁波掩蔽材料可做爲低周波數及高周波數兩者用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可撓性亦優良，故於輕薄短小化之各種製品中亦可廣泛 使用。 (實施例6 )The electromagnetic wave masking material obtained in this way was used with a phase-shift vibrator—while irradiating electromagnetic waves of 100 to 200 Hz and 2 GHz to 2 GHz, respectively, and when measuring with an oscilloscope, it was not detected on the side where the electromagnetic wave was not radiated Electromagnetic waves of 100 to 20 GHz and 1 to 2 gigahertz are emitted. Therefore, the electromagnetic wave masking material obtained above can be used as an electromagnetic wave masking material for both low-frequency and high-frequency waves, and can be used in various applications. In addition, since the electromagnetic wave shielding material is also excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter. (Example 6)
於上述實施例1、2、3、4及5中，除了進行以離子 槍照射離子做爲前處理，代替對於聚合物薄膜所進行的碰 撞處理以外，其他完全同此些實施例處理，取得電磁波掩 蔽材料。 具體而言，於各個實施例中，經由使用安裝離子槍之 濺鍍裝置，代替濺鍍裝置中安裝的加熱器碰撞處理部，於 氣氣lOOcc/分鐘、電源0.5kw/dm2、真空度2xl〇_】pa之條 件下，照射氬離子進行前處理。 如此處理所得之各電磁波掩蔽材料雖於掩蔽效果上與 實施例1、2、3、4及5者無變化，但聚合物薄膜、與基 底層及掩蔽層的密合性更加提高。因此’可令各種製品的 適用範圍更加朝向廣範圍。 -27- (25) (25)I225768 產業上之可利用性 本發明之電磁波掩蔽材料因爲經由減薄其厚度而具有 深具有可撓性的性狀，故亦可應付輕薄短小化的各種製品 。又，本發明之電磁波掩蔽材料視需要可對低周波數及高 周波數兩者電磁波予以同時掩蔽。 【圖式簡單說明】 圖1爲於聚合物薄膜之表面形成基底層，且於其上形 成掩蔽層之電磁波掩蔽材料的槪略截面圖。 圖2爲於聚合物薄膜之表面形成具有防止氧化效果的 基底層，且於其上形成作用爲電極的第二層基底層，並於 其上形成掩蔽層之電磁波掩蔽材料的槪略截面圖。 圖3爲於聚合物薄膜之表面形成具有防止氧化效果的 基底層’且於其上形成作用爲電極的第二層基底層，並於 其上形成掩蔽層，再於其上形成防止變色層之電磁波掩蔽 材料的槪略截面圖。 圖4爲於聚合物薄膜之表面形成具有防止氧化效果的 基底層，且於其上形成三層掩蔽層之電磁波掩蔽材料的槪 略截面圖。 圖5爲於聚合物薄膜之表裏兩面形成掩蔽層之電磁波 掩蔽材料的槪略截面圖。 [ΐ要元件對照表】 -28- (26)1225768 10 1 聚合物薄膜 1 02 基底層 1 03 掩蔽層 20 1 聚合物薄膜 202 基底層 203 掩蔽層 204 基底層 3 0 1 聚合物薄膜 3 02 基底層 303 掩蔽層 304 基底層 305 防止變色層 40 1 聚合物薄膜 4 03 a 第一掩蔽層 4 03 b 第二掩蔽層 4 0 3 c 第三掩蔽層 404 基底層 501 聚合物薄膜 502 基底層 5 0 3 a 第一掩蔽層 5 0 3 b 第二掩蔽層 5 0 3 c 第三掩蔽層 504 基底層In the above-mentioned embodiments 1, 2, 3, 4, and 5, except that the ion gun is used to irradiate ions as a pretreatment, instead of the collision treatment performed on the polymer film, the other processes are completely the same as those in this embodiment to obtain electromagnetic waves. Masking material. Specifically, in each embodiment, a sputtering device using an ion gun is used instead of a heater collision processing section installed in the sputtering device, and the gas is 100 cc / minute, the power is 0.5 kw / dm2, and the vacuum is 2 x l0. _] Under the conditions of pa, irradiated with argon ions for pretreatment. Although each of the electromagnetic wave masking materials obtained in this way has the same masking effect as that of Examples 1, 2, 3, 4, and 5, the adhesion between the polymer film, the substrate, and the masking layer is further improved. Therefore, 'can make the applicable range of various products more broad. -27- (25) (25) I225768 Industrial Applicability The electromagnetic wave masking material of the present invention has a deep flexible property by reducing its thickness, so it can also cope with various products that are thinner and shorter. In addition, the electromagnetic wave masking material of the present invention can simultaneously shield both low frequency and high frequency electromagnetic waves if necessary. [Brief description of the drawings] FIG. 1 is a schematic cross-sectional view of an electromagnetic wave masking material in which a base layer is formed on a surface of a polymer film and a masking layer is formed thereon. Fig. 2 is a schematic cross-sectional view of an electromagnetic wave shielding material in which a base layer having an oxidation prevention effect is formed on a surface of a polymer film, a second base layer serving as an electrode is formed thereon, and a masking layer is formed thereon. FIG. 3 shows the formation of a base layer having an anti-oxidation effect on the surface of a polymer film, and a second base layer serving as an electrode is formed thereon, a masking layer is formed thereon, and a discoloration preventing layer is formed thereon. A schematic cross-sectional view of an electromagnetic wave shielding material. Fig. 4 is a schematic cross-sectional view of an electromagnetic wave masking material in which a base layer having an oxidation prevention effect is formed on the surface of a polymer film, and three masking layers are formed thereon. Fig. 5 is a schematic cross-sectional view of an electromagnetic wave masking material in which a masking layer is formed on both surfaces of a polymer film. [Comparison of essential components] -28- (26) 1225768 10 1 Polymer film 1 02 Base layer 1 03 Masking layer 20 1 Polymer film 202 Base layer 203 Masking layer 204 Base layer 3 0 1 Polymer film 3 02 Base Layer 303 Masking layer 304 Base layer 305 Discoloration preventing layer 40 1 Polymer film 4 03 a First masking layer 4 03 b Second masking layer 4 0 3 c Third masking layer 404 Base layer 501 Polymer film 502 Base layer 5 0 3 a first masking layer 5 0 3 b second masking layer 5 0 3 c third masking layer 504 base layer
-29 --29-
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| Application Number | Priority Date | Filing Date | Title |
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| JP2002288995A JP2004128158A (en) | 2002-10-01 | 2002-10-01 | Electromagnetic shielding material |
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| TW200417309A TW200417309A (en) | 2004-09-01 |
| TWI225768B true TWI225768B (en) | 2004-12-21 |
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| JP (1) | JP2004128158A (en) |
| AU (1) | AU2003266635A1 (en) |
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| CN100438739C (en) * | 2004-06-10 | 2008-11-26 | 鸿富锦精密工业（深圳）有限公司 | Anti wearing electromagnetic interference layer |
| KR100612892B1 (en) | 2004-11-12 | 2006-08-14 | 삼성전자주식회사 | Semiconductor device and fabricating method of the same |
| JP4902168B2 (en) * | 2005-10-20 | 2012-03-21 | 藤森工業株式会社 | Electromagnetic wave shielding material and manufacturing method thereof |
| JP4732147B2 (en) * | 2005-11-21 | 2011-07-27 | 豊田合成株式会社 | Resin product, method for producing the same, and method for forming metal film |
| JP2008066512A (en) * | 2006-09-07 | 2008-03-21 | Sony Corp | Radiator plate manufacturing method |
| KR101281328B1 (en) | 2008-01-15 | 2013-07-03 | (주)엘지하우시스 | Electromagnetic shielding sheet, preparation method thereof and cellular phone comprising the same |
| JP5202377B2 (en) * | 2008-04-21 | 2013-06-05 | 信越ポリマー株式会社 | Coverlay film and flexible printed wiring board |
| JP2009287095A (en) * | 2008-05-30 | 2009-12-10 | Nippon Mining & Metals Co Ltd | PLATED FILM OF Sn, AND COMPOSITE MATERIAL HAVING THE SAME |
| JP2009299157A (en) * | 2008-06-16 | 2009-12-24 | Nippon Mining & Metals Co Ltd | Tin plating film and composite material having the same |
| JP5268748B2 (en) * | 2009-03-31 | 2013-08-21 | Ｊｘ日鉱日石金属株式会社 | Sn or Sn alloy plating film and composite material having the same |
| US9728304B2 (en) * | 2009-07-16 | 2017-08-08 | Pct International, Inc. | Shielding tape with multiple foil layers |
| CN101724842B (en) * | 2009-11-29 | 2012-06-20 | 田建军 | Method and device for preparing electromagnetic wave shielding material |
| CN102948018B (en) | 2010-05-21 | 2016-04-06 | Pct国际股份有限公司 | With connector and the relevant system and method thereof of locking mechanism |
| US8579658B2 (en) | 2010-08-20 | 2013-11-12 | Timothy L. Youtsey | Coaxial cable connectors with washers for preventing separation of mated connectors |
| CN102395257A (en) * | 2011-07-22 | 2012-03-28 | 东莞市万丰纳米材料有限公司 | Electromagnetic shielding film and preparation method thereof |
| US9028276B2 (en) | 2011-12-06 | 2015-05-12 | Pct International, Inc. | Coaxial cable continuity device |
| CN103898574A (en) * | 2012-12-24 | 2014-07-02 | 北京有色金属研究总院 | Electroplating Fe-Ni alloy magnetic shielding material and preparation method thereof |
| CN104608437A (en) * | 2015-02-05 | 2015-05-13 | 吴江市金桥纺织品有限公司 | Soft nano-shielding film and production method thereof |
| JP6129232B2 (en) * | 2015-03-31 | 2017-05-17 | Ｊｘ金属株式会社 | Electromagnetic shielding material |
| TWI748975B (en) * | 2015-12-25 | 2021-12-11 | 日商拓自達電線股份有限公司 | Electromagnetic wave shielding film and manufacturing method thereof |
| JP7390779B2 (en) | 2017-04-28 | 2023-12-04 | 日東電工株式会社 | Flexible wiring circuit board and imaging device |
| CN109065360A (en) * | 2018-08-22 | 2018-12-21 | 哈尔滨工业大学 | A kind of preparation method of the electro-deposition permalloy film on aluminum matrix composite |
| CN111455409B (en) * | 2020-05-25 | 2021-07-30 | 有研资源环境技术研究院(北京)有限公司 | Coating material of magnetic shielding tank shell for vertical aluminum electrolytic tank and preparation method of magnetic shielding tank shell |
| TW202222563A (en) | 2020-12-14 | 2022-06-16 | 日商拓自達電線股份有限公司 | Electromagnetic wave shielding film and shielded printed wiring board having a shielding layer with a high adhesion strength and excellent bending resistance |
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| JPH06177571A (en) * | 1992-12-01 | 1994-06-24 | Fujitsu Kasei Kk | Electronic equipment case and manufacture thereof |
| JP2817891B2 (en) * | 1993-11-08 | 1998-10-30 | 中外イングス株式会社 | Manufacturing method of electromagnetic wave shielding plastic molded products |
| JP2000212315A (en) * | 1999-01-22 | 2000-08-02 | Matsushita Electric Ind Co Ltd | Double-side metallized film |
| JP2001200376A (en) * | 2000-01-20 | 2001-07-24 | Hakuto Kagi Kofun Yugenkoshi | Method for depositing electro-magnetic wave shield film |
-
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| JP2004128158A (en) | 2004-04-22 |
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| TW200417309A (en) | 2004-09-01 |
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