1223899 玖、發明說明 【發明所屬之技術領域】 本發明是有關於一種發光二極體（Light Emiuing1223899 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a light emitting diode (Light Emiuing
Diode; LED)及其製造方法，且特別是有關於一種具有可 加強散熱效果之傳導層之發光二極體及其製造方法。 【先前技術】 近年來，許多的焦點集中在以氮化物為主的半導體所 2成的發光元件，例如氮化鎵（GaN)、氮化鋁鎵（A1GaN)、 氮化銦鎵（InGaN)、以及氮化鋁銦鎵（A1InGaN)等。此類的 發光元件半導體大多成長於不導電之基板上，例如藍寶石 (Sapphire)、氮化鎵、或氮化鋁等基板，而與其他發光元 件採用可導電的基板不同。由於藍寶石基板為一絕緣體， 因此不能直接製作電極於基板上，故電極的製作必須直接 與P型的半導體層以及N型的半導體層做各別地接觸，才 能完成此類發光元件的製作。 請參考第1圖所繪示之習知氮化物發光二極體之剖面 示意圖。第1圖中之發光二極體8〇可經由以下製程所形 成。首先，在基板10上形成成核層（Nucleati〇n Layer)2〇， ，中基板10之材質例如可為藍寶石、氮化鎵、或氮化鋁 等。接著’依序磊晶第一電性半導體層3〇、多重量子井 (Multi Quantum Well)結構40、以及第二電性半導體層5〇 之堆疊結構於成核層20上。然後，利用蝕刻技術蝕刻前 述之蟲晶層，藉以使部分第一電性半導體層3〇裸露。接 著’利用熱蒸著（Thermal Evaporation)、電子束蒸鍍 (E-beam)、或離子濺鍍（sputtering)等方法，分別沈積第一 電性電極60與第二電性電極7〇於裸露之部分第一電性半 導體層30與第二電性半導體層5〇上。 3-1 1223899 上述基板10之材質例如可為藍寶石、氮化嫁、或氮 化銘等。其中，藍寶石的熱導係數約為35_4〇w/(m.K)A， 其對發光二極體80發光的時候所產生的熱有不良的傳導 效果，使得單-晶粒的熱阻值會過大，因此對於高電流應 用時會有不好的發光效率。 〜 請參考第2圖所緣示之f知氮化物發光二極體之封 裝示意圖。如第2圖中所示’錦線62與銲線⑴系分別連 接至發光二極冑80之第—電性電極6〇與第二電性電極 7一〇,藉以使得發光二極體8G可電連接至外部電源或其它 凡件。在發光二極體80之封裝時，由於以藍寶石等材質 形成之基S 10會透光’所以在晶粒固著上，均採用會透 光的白膠94將發光二極體8〇黏著於杯面金屬9〇上杯 面金屬90則連接至底I 92)，以利下方的光會藉由杯面 金屬90反射’來達到提高發光的效果。然而，一般的白 膠94之導熱係數仍不佳。此外，若將白膠％換成銀膠， 則此銀膠與銲料的部份又有吸光之可能，因此使得發光二 極體80的使用範圍有所限制。 再者’藍寶石材料的硬度相當大，因此其相關製程， ^切割等’都不易執行。況且，藍f石本身為非導體，使 得電極需作在發光：極體之同—面，導致在發光二極體之 設計上，將會面臨佔用發光面積之問題；同時，此點對後 續測試與封裝上亦有不便之處。 對於上述氮化鋁錮鎵發光二極體的習知解決方法之 -為覆晶(Flip Chip)方式’然而此方式中反射層與覆晶等 之製程上，均有其一定之難度。 因此’雲於未來發光二極體將朝向更高亮度的應用市 場發展，單一發光二極體的操作電流及功率必會是目前數 倍至數百倍的範圍。在此同時，如何將發光二極體所發出 的光及後續衍生的熱做有效的運用和解決，將是一個相當 重要且不可忽視的問題。 【發明内容】 因此本I明的目的就是在提供一種發光二極體及其 製造方法，係藉由基板之厚度之減小甚至完全去除，而大 幅降低發光二極體之熱阻。 本發明的另一目的是在提供一種發光二極體及其製 造方法，係藉由磊晶結構下方之傳導層將磊晶結構所產生 的熱順利導出，而大幅降低發光二極體之熱阻。 本發明的再一目的是在提供一種發光二極體及其製 造方法，係藉由傳導層上方之反射層使磊晶結 光可做更有效率之反射。 出的 本叙月的又一目的是在提供一種發光二極體及其製 造方法，其中若傳導層之材質為導體，則發光二極體的兩 個電極可分別位於磊晶結構之上表面與傳導層之下表 面，因此可藉以減少電極之遮光面積。 根據本發明之上述目㈤，提出一種發光二極體之妙 構。在本發明一較佳實施例中，此發光二極體之結構至： 包括·傳導層，係用以傳導發光二極體所產生之熱一 反射二：於傳導層上；一透明導熱膠，位於反射層上; 以及-蟲晶結構’位於透明導熱膠上，其中蠢晶結 少包括複數個ΙΠ_ν·化合物半導體磊晶層，而這 1223899 族化合物半導體磊晶層更至少包括依序堆疊之一第一電 性半導體層、一多重量子井結構以及一第二電性半導體 層’當通入電流後產生光。此外，此發光二極體更可包括 一基板，位於磊晶結構與透明導熱膠之間，其中此基板係 由透明絕緣材質所形成，且此基板之厚度小於5〇μπ1。再 者’此發光二極體更可包括一第一電性電極與一第二電性 電極，分別位於磊晶結構之一第一表面與一第二表面上。 根據本發明之目的，提出一種發光二極體之結構。在 本發明另一較佳實施例中，此發光二極體之結構至少包 傳導層’係用以傳導發光二極體所產生之熱；一黏 著反射層，位於傳導層上；以及一磊晶結構，位於黏著反 射層上’其中此磊晶結構中至少包括複數個ΙΙΙ-ν族化合 物，導體蟲晶層，而這些m_v族化合物半導體蠢晶層更 2少包括依序堆疊之一第一電性半導體層、一多重量子井 構2及一第二電性半導體層，當通入電流後產生光。其 石^傳導層之材質為矽、氮化鎵、氮化鋁、鑽石、碳化 石夕、或其複合材料，則此發光二極體更可包括一雷 電極斑一筮一啦 不 电丨王 與一第二表—電性電極，分別位於磊晶結構之一第—表面 金、或Γ複。再者’若傳導層之材質為銅、銀、銘、 電極鱼-第斗’則此發光二極體更可包括一第-電性 社播夕 一電性電極，分別位於傳導層之一表面鱼蟲晶 、、、口構之一表面上。 /、猫日日 根據本發日月 法。在本發明一1 、，提出一種發光二極體之製造方 至少包括二下：較佳實施例中，此發光二極體之製造方法 V騍。首先，提供一傳導層，此傳導層係用 6 以傳導發光二極體所產生之熱。接著，形成一反射層於傳 導層上0接著，k供一蠢晶結構，其中此蠢晶結構中至少 包括複數個III-V族化合物半導體磊晶層，而這些ΠΙ_ν 族化合物半導體磊晶層更至少包括依序堆疊之一第一電 性半導體層、一多重量子井結構以及一第二電性半導體 層，當通入電流後產生光。然後，利用一透明導熱膠黏合 反射層與磊晶結構。此外，此發光二極體之製造方法更可 b括k i、基板，且蠢晶結構係形成於基板上，而之後此 基板係位於磊晶結構與透明導熱膠之間，其中此基板係由 透明絕緣材質所形成，且此基板之厚度小於50μιη。再者， 此發光二極體之製造方法更可包括形成一第一電性電極 與一第二電性電極，分別位於磊晶結構之一第一表面與一 第二表面上。 根據本發明之目的，提出一種發光二極體之製造方 法。在本發明另一較佳實施例中，此發光二極體之製造方 法至少包括以下步驟。首先，提供一傳導層，此傳導層係 用以傳導發光二極體所產生之熱。接著，提H曰曰結 構，其中此磊晶結構中至少包括複數個ΠΙ_ν族化合物半 導體磊晶層，而這些ΠΙ_ν族化合物半導體磊晶層；至少 包括依序堆疊之一第一電性半導體層、一多重量子井"冓 以及一第二電性半導體^，當通入電流後產±光。然i， 利用一黏著反射層黏合傳導層與蠢晶結構。料，若傳導 層之材質為矽、氮化鎵、氮化鋁、鑽石、石炭化矽、或其複 合材料’則此發光二極體之製造方法更可包括形成一第一 電除電極與_第二電性電極，分別位於蠢晶結構之一第一 表面與一第二表面上。苒去 ^ ^ ^, 再者，右傳導層之材質為銅、銀、 紹、金、或其複合材料 - 、此毛先一極體之製造方法更可 匕括形成一第一電性電極盥一第― ^ ^ ^ /、弟一電性電極，分別位於傳 導層之一表面與磊晶結構之一表面上。 因此，本發明可藉由基板之厚度之減小甚至完全去 除，而大幅降低發光二極體之熱阻。 此外本發明可藉由i晶結構下方之傳導層將遙晶結 構所產生的熱順利導出’而大幅降低發光二極體之敎阻。 再者，本發明可藉由傳導層上方之反射層使遙晶結構 所發出的光可做更有效率之反射。 另外，本發明若傳導層之材質為導體，則發光二極體 的兩個電極可分別位於蠢晶結構之上表面與傳導層之下 表面，因此可藉以減少電極之遮光面積。 【實施方式】 ' 本^明係有關係一種具有卩加強散熱效果之傳導層 之發光二㉟體及其製造方法，其中此發光二極體中至少包 括以氣化㈣鎵等πυ族化合物所形成之數層半導體遙 晶層。請參考第3A圖所繪示之依照本發明一較佳實施例 的一種發光二極體之剖面示意圖。第3A圖中之發光二極 體可經由以下製程所形成。首先，提供基板110,其材質 例如可為藍寶石、氮化鎵、或氮化鋁等。接著，依序磊晶 第一電性半導體層130、多重量子井結構140、以及第二 電性半導體層150之堆疊結構於基材11〇上。然後，利用 餘刻技術餘刻前述之蠢晶結構，藉以使部分第一電性半導 體層13G裸露。接著，利用熱蒸著、電子束蒸鍍、或離子 1223899 濺鍍等方法，分別沈積 m於裸露之部分第1性2電極__二電性電極 體層15Gh值得 導體層13G與第二電性半導 電性與第二電性係互為相：’轉明中所提及的所有第- 型’則第二電性為Ns;若第二右弟電性為p 性為P型。 右第-電性為N型，則第二電 磨溥或蝕刻，藉以使基材1 10之厚 度減至約ΙΟμηχ至5〇μηι，嗖|承键 务 μ 次疋更溥。接者，提供傳導層 *材料主要為高導熱材料，例如銅、銀、鋁、或金 等金屬（包括其複合之材料），或是其它非金屬材料，例如 矽、氮化鎵、氮化鋁、鑽石、或碳化矽等（包括其複合之 材料）。此傳導層200上方更以高反射性之材料，例如σ銀、 金、或鋁等，形成反射層190,藉以使其上方之磊晶結構 所發出的光可經由此反射層19〇做更有效率之反射。然 後’利用透明導熱膠180將上述磊晶結構與基板11〇黏合 至具有反射層190之傳導層200上，其中透明導熱膠ι8〇 之材質可為矽膠或環氧樹脂（Epoxy)等。 運用上述本發明之發光二極體之結構與製程，由於基 板110之厚度已減小，因此使得熱阻可大幅降低。此外， 於基板110之下方所黏著之導熱良好之傳導層200可使熱 更快速散出，藉以迅速降低多重量子井結構140中所產生 的熱。再者，後續於傳導層200下方進行晶粒封裝固著 時，將不限於使用白膠，而更可利用銀膠、或者銦或錫等 銲料做黏著，藉以使此種發光二極體可廣泛地使用於更多 的範圍上。 9 1223899 請參考第3B圖所繪示之依照本發明另一較佳實施例 的一種發光二極體之剖面示意圖。第3B圖中與第3A圖 中所繪示者之差異在於，第3A圖中的透明導熱膠180與 反射層190可以第3B圖中同時具有黏著與反射功能之單 一層黏著反射層210來取代，以便做更大範圍之應用。其 中，此黏著反射層210之材質例如可為金屬。Diode; LED) and a manufacturing method thereof, and more particularly, to a light emitting diode having a conductive layer capable of enhancing heat dissipation effect and a manufacturing method thereof. [Prior technology] In recent years, many focuses have been focused on light-emitting elements composed of nitride-based semiconductors, such as gallium nitride (GaN), aluminum gallium nitride (A1GaN), indium gallium nitride (InGaN), And aluminum indium gallium nitride (A1InGaN). Such light-emitting element semiconductors are mostly grown on non-conductive substrates, such as sapphire, gallium nitride, or aluminum nitride substrates, and are different from other light-emitting elements using conductive substrates. Since the sapphire substrate is an insulator, electrodes cannot be directly fabricated on the substrate. Therefore, the electrodes must be directly contacted separately with the P-type semiconductor layer and the N-type semiconductor layer to complete the production of such light-emitting elements. Please refer to the schematic diagram of the cross section of the conventional nitride light emitting diode shown in FIG. 1. The light emitting diode 80 in the first figure can be formed by the following process. First, a nucleation layer 20 is formed on the substrate 10. The material of the middle substrate 10 can be, for example, sapphire, gallium nitride, or aluminum nitride. Next, a stacked structure of the first electrical semiconductor layer 30, the multiple quantum well structure 40, and the second electrical semiconductor layer 50 is sequentially deposited on the nucleation layer 20. Then, the aforementioned insect crystal layer is etched by an etching technique, so that a part of the first electrical semiconductor layer 30 is exposed. Next, the first electrical electrode 60 and the second electrical electrode 70 are deposited on the bare electrode by using thermal evaporation, E-beam, or ion sputtering. A portion of the first electrical semiconductor layer 30 and the second electrical semiconductor layer 50 are formed. 3-1 1223899 The material of the substrate 10 may be, for example, sapphire, nitrided nitride, or nitrided nitride. Among them, the thermal conductivity of sapphire is about 35_40 w / (mK) A, which has a poor conduction effect on the heat generated when the light-emitting diode 80 emits light, making the single-grain thermal resistance value too large. Therefore, there will be poor luminous efficiency for high current applications. ~ Please refer to Figure 2 for the packaging schematic diagram of nitride light emitting diodes. As shown in FIG. 2, the brocade wire 62 and the bonding wire ⑴ are respectively connected to the first electric electrode 60 and the second electric electrode 710 of the light emitting diode 80, so that the light emitting diode 8G can be Electrically connected to an external power source or anything else. In the packaging of the light emitting diode 80, the base S 10 formed of sapphire and other materials will transmit light. Therefore, the light emitting diode 80 is adhered to the crystals by using a white glue 94 that transmits light. The cup surface metal 90 is connected to the bottom surface I 92), so that the light underneath will be reflected by the cup surface metal 90 to improve the luminous effect. However, the thermal conductivity of ordinary white rubber 94 is still poor. In addition, if the white glue% is replaced with the silver glue, the silver glue and the solder part may absorb light again, so the use range of the light emitting diode 80 is limited. Moreover, the hardness of the sapphire material is quite large, so its related processes, such as cutting, etc., are not easy to perform. Moreover, the blue f stone itself is a non-conductor, so that the electrode needs to be used for light emission: the same surface of the pole body, resulting in the design of the light emitting diode, it will face the problem of occupying the light emitting area; at the same time, this point is for subsequent testing There are also inconveniences on the package. One of the conventional solutions to the above-mentioned aluminum gallium nitride gallium light-emitting diode is a flip chip method. However, in this method, the processes of the reflective layer and the flip chip have certain difficulties. Therefore, ‘cloud’ light-emitting diodes will develop toward higher-brightness application markets in the future. The operating current and power of a single light-emitting diode will be in the range of several times to hundreds of times. At the same time, how to effectively use and solve the light emitted by the light-emitting diode and the subsequent derived heat will be a very important issue that cannot be ignored. [Summary of the Invention] Therefore, the purpose of the present invention is to provide a light emitting diode and a manufacturing method thereof, which reduce the thermal resistance of the light emitting diode by reducing or even completely removing the thickness of the substrate. Another object of the present invention is to provide a light emitting diode and a manufacturing method thereof. The heat generated by the epitaxial structure is smoothly discharged through a conductive layer under the epitaxial structure, thereby greatly reducing the thermal resistance of the light emitting diode. . Still another object of the present invention is to provide a light emitting diode and a method for manufacturing the same. The epitaxial junction light can be reflected more efficiently by a reflective layer over a conductive layer. Another object of this month is to provide a light-emitting diode and a method for manufacturing the same. If the material of the conductive layer is a conductor, the two electrodes of the light-emitting diode can be respectively located on the upper surface of the epitaxial structure and The lower surface of the conductive layer can reduce the light-shielding area of the electrode. According to the above object of the present invention, a novel structure of a light emitting diode is proposed. In a preferred embodiment of the present invention, the structure of the light-emitting diode includes: a conductive layer, which is used to conduct heat generated by the light-emitting diode, a reflection two: on the conductive layer; a transparent thermal conductive adhesive, Located on the reflective layer; and-the worm crystal structure 'is located on the transparent thermally conductive adhesive, wherein the stupid crystal junction rarely includes a plurality of ΠΠνv compound semiconductor epitaxial layers, and the 1223899 group compound semiconductor epitaxial layer includes at least one of a sequential stack The first electrical semiconductor layer, a multiple quantum well structure, and a second electrical semiconductor layer ′ generate light when a current is passed in. In addition, the light-emitting diode may further include a substrate located between the epitaxial structure and the transparent thermally conductive adhesive, wherein the substrate is formed of a transparent insulating material, and the thickness of the substrate is less than 50 μπ1. Furthermore, the light emitting diode may further include a first electrical electrode and a second electrical electrode, which are respectively located on a first surface and a second surface of the epitaxial structure. According to the purpose of the present invention, a structure of a light emitting diode is proposed. In another preferred embodiment of the present invention, the structure of the light-emitting diode includes at least a conductive layer, which is used to conduct heat generated by the light-emitting diode; an adhesive reflective layer on the conductive layer; and an epitaxial layer. Structure, located on the adhesive reflection layer, wherein the epitaxial structure includes at least a plurality of III-V compounds and a conductor worm crystal layer, and these m_v group compound semiconductor stupid crystal layers further include one of the first stacks sequentially stacked. The semiconductor layer, a multiple quantum well structure 2 and a second electrical semiconductor layer generate light when a current is applied. The material of the stone ^ conductive layer is silicon, gallium nitride, aluminum nitride, diamond, carbide, or a composite material thereof, and the light emitting diode may further include a lightning electrode spot, and a power source. Wang And a second surface-electrical electrode, which are respectively located on the first-surface gold or Γ complex of the epitaxial structure. Furthermore, 'if the material of the conductive layer is copper, silver, inscription, electrode fish-the first bucket', the light-emitting diode may further include a first electric electrode and an electric electrode, which are respectively located on one surface of the conductive layer. One of the fish and insect crystals is on the surface. / 、 Cat Day Day According to the date and month law of this issue. In the first aspect of the present invention, a method for manufacturing a light emitting diode is provided. The method includes at least two steps: In a preferred embodiment, a method for manufacturing the light emitting diode V 骒. First, a conductive layer is provided. The conductive layer uses 6 to conduct heat generated by the light emitting diode. Next, a reflective layer is formed on the conductive layer. Next, k provides a stupid structure, where the stupid structure includes at least a plurality of III-V compound semiconductor epitaxial layers, and these III-V compound semiconductor epitaxial layers are more It includes at least one first electrical semiconductor layer, a multiple quantum well structure, and a second electrical semiconductor layer which are sequentially stacked, and generates light when a current is passed in. Then, a transparent thermally conductive adhesive is used to bond the reflective layer and the epitaxial structure. In addition, the manufacturing method of the light-emitting diode can further include a substrate and a substrate, and a stupid crystal structure is formed on the substrate, and then the substrate is located between the epitaxial structure and the transparent thermal conductive adhesive, wherein the substrate is made of transparent It is made of insulating material, and the thickness of the substrate is less than 50 μm. Furthermore, the method for manufacturing the light emitting diode may further include forming a first electrical electrode and a second electrical electrode, which are respectively located on a first surface and a second surface of the epitaxial structure. According to the purpose of the present invention, a method for manufacturing a light emitting diode is proposed. In another preferred embodiment of the present invention, the method for manufacturing the light emitting diode includes at least the following steps. First, a conductive layer is provided. The conductive layer is used to conduct heat generated by the light emitting diode. Next, the H structure is mentioned, in which the epitaxial structure includes at least a plurality of III-v compound semiconductor epitaxial layers, and these III-v compound semiconductor epitaxial layers include at least one first electrical semiconductor layer stacked in sequence, A multiple quantum well "冓" and a second electrical semiconductor ^ produce light when a current is applied. However, an adhesive reflective layer is used to bond the conductive layer and the stupid crystal structure. Materials, if the material of the conductive layer is silicon, gallium nitride, aluminum nitride, diamond, silicon carbide, or a composite material thereof, the method for manufacturing the light emitting diode may further include forming a first ionization electrode and The second electrical electrodes are respectively located on a first surface and a second surface of the stupid crystal structure. ^ ^ ^, In addition, the material of the right conductive layer is copper, silver, Shao, gold, or a composite material thereof, and the manufacturing method of the hair-first polar body can further form a first electrical electrode. A first electrical electrode is located on one surface of the conductive layer and one surface of the epitaxial structure, respectively. Therefore, the present invention can greatly reduce the thermal resistance of the light emitting diode by reducing or even completely removing the thickness of the substrate. In addition, the present invention can use a conductive layer under the i-crystal structure to smoothly conduct the heat generated by the tele-crystal structure ', thereby greatly reducing the resistance of the light-emitting diode. Furthermore, the present invention can make the light emitted by the telecrystal structure reflect more efficiently by using a reflective layer above the conductive layer. In addition, according to the present invention, if the material of the conductive layer is a conductor, the two electrodes of the light-emitting diode can be respectively located on the upper surface of the stupid structure and the lower surface of the conductive layer, so that the light shielding area of the electrode can be reduced. [Embodiment] The present invention relates to a light-emitting diode having a conductive layer with enhanced heat dissipation effect and a manufacturing method thereof, wherein the light-emitting diode includes at least a πυ group compound formed by vaporizing gallium and gallium. Several layers of semiconductor telecrystals. Please refer to FIG. 3A for a schematic cross-sectional view of a light emitting diode according to a preferred embodiment of the present invention. The light emitting diode in FIG. 3A can be formed through the following processes. First, a substrate 110 is provided, and the material may be, for example, sapphire, gallium nitride, or aluminum nitride. Next, a stacked structure of the first electrical semiconductor layer 130, the multiple quantum well structure 140, and the second electrical semiconductor layer 150 is sequentially epitaxially deposited on the substrate 110. Then, a part of the first electrical semiconductor layer 13G is exposed by using the epitaxial technique to epitaxially the aforementioned stupid crystal structure. Next, using thermal evaporation, electron beam evaporation, or ion 1223899 sputtering, etc., the first and second electrode __dielectric electrode body layer 15Gh which is m on the exposed part are respectively deposited on the conductive layer 13G and the second electrical half. Conductivity and the second electrical system are in phase with each other: 'All the first-types mentioned in the turn of the Ming' then the second electrical property is Ns; if the second right electrical property is p-type, it is P-type. On the right, the N-type is N-type, and the second electric grinding or etching is performed to reduce the thickness of the substrate 10 to about 10 μηχ to 50 μηι. In order to provide a conductive layer *, the materials are mainly highly thermally conductive materials, such as copper, silver, aluminum, or gold (including composite materials), or other non-metallic materials, such as silicon, gallium nitride, and aluminum nitride. , Diamond, or silicon carbide (including composite materials). A highly reflective material, such as σ silver, gold, or aluminum, is formed over the conductive layer 200 to form a reflective layer 190, so that the light emitted by the epitaxial structure above it can be made more effective through the reflective layer 19. Reflection of efficiency. Then, the above-mentioned epitaxial structure and the substrate 110 are bonded to the conductive layer 200 having the reflective layer 190 by using the transparent thermally conductive adhesive 180, and the material of the transparent thermally conductive adhesive ι80 may be silicone or epoxy. By using the structure and manufacturing process of the light-emitting diode of the present invention, since the thickness of the substrate 110 has been reduced, the thermal resistance can be greatly reduced. In addition, the conductive layer 200 with good thermal conductivity adhered below the substrate 110 can dissipate heat more quickly, thereby rapidly reducing the heat generated in the multiple quantum well structure 140. Furthermore, when subsequent die-bonding and fixing under the conductive layer 200 is not limited to the use of white glue, silver glue, or solder such as indium or tin can be used for adhesion, so that this light-emitting diode can be widely used. Ground is used in more areas. 9 1223899 Please refer to FIG. 3B for a schematic cross-sectional view of a light emitting diode according to another preferred embodiment of the present invention. The difference between FIG. 3B and that shown in FIG. 3A is that the transparent thermally conductive adhesive 180 and the reflective layer 190 in FIG. 3A can be replaced by a single layer of adhesive reflective layer 210 having both adhesive and reflective functions in FIG. In order to make a wider range of applications. The material of the adhesive reflection layer 210 may be metal, for example.
請參考第4圖所繪示之依照本發明另一較佳實施例 的一種發光二極體之剖面示意圖。第4圖中與第3A圖中 所繪示者之差異在於，第4圖中並無繪示第3A圖中的基 板110，係因在本實施例中已將基板以磨掉、蝕刻、或卸 掉等方法完全去除。如此一來，可使本發明中的發光二極 體之熱阻進一步降低，並提高發光效率。Please refer to FIG. 4 for a schematic cross-sectional view of a light emitting diode according to another preferred embodiment of the present invention. The difference between FIG. 4 and that shown in FIG. 3A is that the substrate 110 in FIG. 3A is not shown in FIG. 4 because the substrate has been abraded, etched, or Removal and other methods to completely remove. In this way, the thermal resistance of the light-emitting diode in the present invention can be further reduced, and the light-emitting efficiency can be improved.
請參考第5圖所繪示之依照本發明再一較佳實施例 的一種發光二極體之剖面示意圖。第5圖中與第4圖中所 繪示者之差異在於，第4圖中的透明導熱膠18〇與反射層 190可以第5圖中同時具有黏著與反射功能之單_層黏著 反射層210來取代’以便做更大範圍之應用。其中，此黏 著反射層210之材質例如可為金屬。 — “ π〜W ,,阡守層2〇〇 處可為高導熱導體材料’亦可為高導熱非導體材料。 傳導層之材質為高導熱導體材料，則本發明可如第 所纷示之又一較佳實施例做進一步變化。在第： ::!導層220之材質為導體，因此發光二極體的兩個電 刀別位於蟲晶結構之上表面與傳導層22 即’第6圖中的發光二極體之第-電性電極162:位面於 10 1223899 導層220之下表面上，而第二電性電極17〇則位於磊晶結 構之上表面，因此可藉以減少電極之遮光面積。 由上述本發明較佳實施例可知，應用本發明，可藉由 基板之厚度之減小甚至完全去除，而大幅降低發光二極體 之熱阻。 此外’由上述本發明較佳實施例可知，應用本發明， 可藉由磊晶結構下方之傳導層將磊晶結構所產生的熱順 利導出，而大幅降低發光二極體之熱阻。 再者，由上述本發明較佳實施例可知，應用本發明， 可藉由傳導層上方之反射層使磊晶結構所發出的光可做 更有效率之反射。 另外，由上述本發明較佳實施例可知，應用本發明， 若傳導層之材質為導體，則發光二極體的兩個電極可分別 位於磊晶結構之上表面與傳導層之下表面，因此可藉以減 少電極之遮光面積。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限疋本發明，任何熟習此技藝者，在不脫離本發明之精 範圍内，當可作各種之更動與潤飾，因此本發明之保 遵範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖係繪示習知氮化物發光二極體之剖面示意圖。 第2圖係繪示習知氮化物發光二極體之封裝示意圖。 第3 A圖係繪示依照本發明一較佳實施例的一種發光 一極體之剖面示意圖。 第3B圖係繪示依照本發明另一較佳實施例的一種發 11 光一極體之剖面示意圖。 第4圖係繪示依照本發明另 光二極體之剖面示意圖。 一較佳實施例的一種發 第5圖係繪示依照本發明再— 光二極體之剖面示意圖。 車交隹實施例的一種發 第6圖係繪示依照本發明 光二極體之剖面示意圖。 【元件代表符號簡單說明】 1 〇 :基板 又一 車乂隹實施例的一種發 20 :成核層 30 :第一電性半導體層 40 :多重量子井結構 5〇 :第二電性半導體層 6〇 ··第一電性電極 62 :銲線 _ 70 :第二電性電極 72 :銲線 8〇 ··發光二極體 90 :杯面金屬 92 :底座Please refer to FIG. 5 for a schematic cross-sectional view of a light emitting diode according to another preferred embodiment of the present invention. The difference between FIG. 5 and that shown in FIG. 4 is that the transparent thermally conductive adhesive 18 and the reflection layer 190 in FIG. 4 can be a single-layer adhesive reflection layer 210 having both adhesion and reflection functions in FIG. 5. To replace 'in order to do a wider range of applications. The material of the adhesive reflection layer 210 may be metal, for example. — "Π ~ W ,, the layer 200 may be a highly thermally conductive conductor material 'or a highly thermally conductive non-conductive material. The material of the conductive layer is a highly thermally conductive conductor material, the present invention can be as shown in the first paragraph. Yet another preferred embodiment is further changed. In the first: ::! The conductive layer 220 is made of a conductor, so the two electric knives of the light-emitting diode are located on the upper surface of the worm crystal structure and the conductive layer 22, that is, the "sixth The first electrical electrode 162 of the light-emitting diode in the figure: the plane is on the lower surface of the 10 1223899 conductive layer 220, and the second electrical electrode 17 is on the upper surface of the epitaxial structure, so the electrode can be reduced. According to the above-mentioned preferred embodiments of the present invention, it can be known that the application of the present invention can greatly reduce the thermal resistance of the light-emitting diode by reducing or even removing the thickness of the substrate. It can be seen from the examples that with the present invention, the heat generated by the epitaxial structure can be smoothly conducted through the conductive layer under the epitaxial structure, and the thermal resistance of the light emitting diode can be greatly reduced. Furthermore, the above-mentioned present invention is preferably implemented The example shows that the application of the present invention can be borrowed The reflective layer above the conductive layer enables the light emitted by the epitaxial structure to be reflected more efficiently. In addition, according to the above-mentioned preferred embodiments of the present invention, it is known that if the material of the conductive layer is a conductor, the light-emitting layer 2 will emit light. The two electrodes of the polar body can be respectively located on the upper surface of the epitaxial structure and the lower surface of the conductive layer, so that the light-shielding area of the electrode can be reduced. Although the present invention has been disclosed as above with a preferred embodiment, it is not limited thereto.疋 In the present invention, anyone skilled in the art can make various modifications and retouches without departing from the scope of the present invention. Therefore, the scope of guarantee of the present invention shall be determined by the scope of the attached patent application. [Schematic description] Figure 1 is a schematic cross-sectional view of a conventional nitride light-emitting diode. Figure 2 is a schematic diagram of a conventional nitride light-emitting diode package. Figure 3 A is a drawing according to A schematic cross-sectional view of a light-emitting polar body according to a preferred embodiment of the present invention. FIG. 3B is a schematic cross-sectional view of a light-emitting monopolar body according to another preferred embodiment of the present invention. A schematic cross-sectional view of another photodiode according to the present invention. Fig. 5 shows a cross-sectional view of a photodiode according to the present invention. A cross-sectional view of a photodiode according to the present invention is shown in Fig. 6 A schematic cross-sectional view of a photodiode according to the present invention is shown. [A brief description of the element representative symbols] 1 0: A substrate of another embodiment of the car 20: a nucleation layer 30: a first electrical semiconductor layer 40: a multiple quantum well Structure 50: second electrical semiconductor layer 60. first electrical electrode 62: bonding wire 70: second electrical electrode 72: bonding wire 80. light emitting diode 90: cup surface metal 92: Base
94 :白膠 110 ·基板 130:第一電性半導體層 140 :多重量子井結構 150 :第二電性半導體層 12 1223899 160 :第一電性電極 162 :第一電性電極 170 :第二電性電極 180 :透明導熱膠 190 :反射層 200 :傳導層 2 10 :黏著反射層 220 :傳導層94: white glue 110 substrate 130: first electrical semiconductor layer 140: multiple quantum well structure 150: second electrical semiconductor layer 12 1223899 160: first electrical electrode 162: first electrical electrode 170: second electrical Resistive electrode 180: transparent thermally conductive adhesive 190: reflective layer 200: conductive layer 2 10: adhesive reflective layer 220: conductive layer