TWI222841B

TWI222841B - Dual-face-emission organic electroluminescent device

Info

Publication number: TWI222841B
Application number: TW92131322A
Authority: TW
Inventors: Ching-Ian Chao; Chia-Kuo Yen
Original assignee: Ind Tech Res Inst; Worldled Co Ltd
Priority date: 2003-11-07
Filing date: 2003-11-07
Publication date: 2004-10-21
Also published as: TW200517004A

Abstract

A dual-race-emission organic electroluminescent device comprises a substrate, organic electroluminescent materials, a first electrode, a second electrode, and an out-coupling enhanced structure. The first electrode is deposited on the substrate, organic electroluminescent materials are sandwiched in between the first electrode and the second electrode. The first electrode and the second electrode are light-transmissive. The out-coupling enhanced structure is deposited on the second electrode, the efficiency of the device from the second electrode face will significantly increase by utilizing the rough surface to reduce the total reflection.

Description

1222841 之技術領域是關於一種效增加外部有機電激雙面發光元件，特別是關效率之有機電激雙面發光元件。五、發明說明（1) 【發明所屬本發明於一種能有【先前技術 :由於有電壓、反應角及厚度薄術。有機電之後，最重部效率。由的麥響而發子電洞再結氣中來，使動，來達到的耗能，同短。機電激發光速度快、發等特性，因激發光元件要的就是如於光在疏密生全反射。合而產生的得有機電激所需的亮度時也會因為元件具光效率而被譽在其發何有效介質之一般而止旦无里，發光元 ’這不熱量的備低成本、壽命長、低驅動佳、耐溫差、耐震性、高視為次世代的發光顯示器技光層的電子電洞結合產生光率的將光導出提高元件的外間傳輸，會因為折射率不同吕’有機電激發光元件經電僅有約19%可穿透基板至空件需要以更高的電壓來驅僅會增加有機電激發光元件累積，導致元件的壽命減目前已知能提高有機電激菸拮浙女客撻符身+不斗敦^先凡件的外部效率之先前孜術大夕祙反射、干涉或折射屌國第6 3 96 2 0 8號專利所揭示，係用反射原理係如美側的電極表面製作反射面，用μ將"凡件的發光面之另一回發光面以提升元件發光的外面另—側的光反射部效率5〇%以上，但是由於—部。= 率丄。以匕方法可提升外發光面，制而產生散射而使：：上、線經過反射才到達則如美國第6 1 40 764號專利所述^果；胡。應用干射原理則、’係於元件的透明電極鍍The technical field of 1222841 is related to an organic electroluminescent double-sided light-emitting element with increased efficiency, especially an organic electroluminescent double-sided light-emitting element with increased efficiency. V. Description of the invention (1) [The invention belongs to a kind of technology that can have [previous technology: due to voltage, reaction angle and thin thickness]. After organic electricity, the most important part is efficiency. The hole made by the wheat rings and the air hole is re-condensed to activate the energy consumption to achieve the same short. The characteristics of electromechanical excitation light are fast and light, because what is needed to excite the light element is that the light is totally reflected and dense. The resulting brightness required by organic electrolysis can also be praised for its effective medium because of the light efficiency of the element. The light-emitting element has a low cost and long life. , Low drive, good temperature resistance, shock resistance, high regarded as the next generation of light-emitting display technology, electronic holes combined with light holes to generate light to guide light to improve the external transmission of the element, will be due to the difference in refractive index Only about 19% of the light element can penetrate the substrate to the empty part through electricity. The higher voltage required to drive the light element will only increase the accumulation of the organic electrical excitation light element, leading to a reduction in the life of the element. Currently known to improve the organic electrical smoke. The external efficiency of the guest talisman + non-combatant ^ The external efficiency of the previous piece is reflected, interfered, or refracted. The National Patent No. 6 3 96 2 0 8 discloses that the principle of reflection is used on the American side. The surface of the electrode is made of a reflective surface, and the light emitting surface of the light-emitting surface of each element is used to increase the efficiency of the light-reflecting part on the other side of the outside of the element by more than 50%. = Rate 丄. The outer luminous surface can be lifted by the dagger method, which produces scattering and makes: the upper and the lines reach after reflection, as described in US Patent No. 6 1 40 764; Hu. Applying the principle of dry shot, the transparent electrode plating of the system

1222841 五、發明說明（2) 上交錯堆疊高折射率和低折射率的構（microcavity struet )，_ 〃' ，形成微共振腔結產生光學干涉作用《加強其>發的不同高之外，由於光波長在不同角度的路徑差所:告：二程成f 度不同，故其亮度與光色將隨 =、干涉私不適用於平面顯示器。另一種應用：：：：的，，因此激發光元件外部效率的方法，係由韓國三：J :::電 IDW. 20 02 ^ ^ ^ ,a ^(phot〇nic crys；a；； J ^ !制侧以增力:發光效率’然而其製程成本偏咼亚且…、法應用於全彩顯示器面板的製作。此外，由Tsutsui教授於2〇〇1年所發<表於國際期刊 Adyanced Materials 2 0 0 1，13, page 1149 之增強外部效率_方法，係應用折射原理於有機電激發光元件導入1〇微米奪的低折射率氣膠層（aerogel layer)，藉此來減少介面的全反射，提升元件的外部效率。【發明内容】為改善習知技術的缺點，本發明提供一種有機電激雙面發光元件，於元件之發光侧增加具有粗糙表面之增強導光結構（out-coupling structure)薄層，來降低出射光之全反射效應。習知的有機電激發光元件僅有入射角小於全反射臨界角路徑的光線能透射出來，而大部分大角度的光線都會因全反射使光線出不來，本發明藉由增強導光結構薄層之粗糙表面所形成的各個凹凸不平角度，使大角度光線和小角度光線皆能有效導出元件表面。1222841 V. Description of the invention (2) The staggered stack of high and low refractive index structures (microcavity struet), _ 〃 ', form a microcavity junction to generate optical interference effects. Due to the difference in the path of the light wavelength at different angles: the second pass becomes f degrees different, so its brightness and light color will not follow, and interference is not suitable for flat display. Another application ::::, so the method of exciting the external efficiency of the light element is made by Korea III: J ::: Electricity IDW. 20 02 ^ ^ ^, a ^ (phot〇nic crys; a ;; J ^ The manufacturing side has a boost: luminous efficiency. However, its manufacturing cost is inferior and is applied to the production of full-color display panels. In addition, published by Professor Tsutsui in 2001, <International Journal Adyanced Materials 2 0 0 1, 13, page 1149 The method of enhancing external efficiency is to use the principle of refraction to introduce a 10-micron low-index aerogel layer in an organic electro-optic element to reduce the interface Total reflection improves the external efficiency of the device. [Summary of the Invention] To improve the shortcomings of the conventional technology, the present invention provides an organic electro-active double-sided light-emitting device, and an enhanced light-guiding structure (out- coupling structure) to reduce the total reflection effect of the emitted light. Conventional organic electro-optic light elements can only transmit light with an incident angle less than the critical angle of the total reflection path, and most large-angle light will be transmitted due to total light. Reflection prevents light from coming out. The present invention enhances various uneven angles formed by the rough surface of the thin layer of the light guide structure, so that both large-angle light and small-angle light can be effectively led to the surface of the element.

1222841 -——- 五、聲明說明（3) 材料ί發明之有機電激雙面發光元件，係由有機電激發光 ^2 !第一電極與第二電極所形成，其第一電極與第二於^ =別"又於有機電激發光材料層之兩側，再外加電壓線。2電極與第二電極以激發有機電激發光材料層發出光發朵^中f 一電極與第二電極係·為透明電極並設於元件之 ^叙41本第二電極表面係設置一增強導光結構薄層，其具增強導光結構薄層其厚度應小於果，二将別疋在5微米以下可得到較佳的發光效率效過5 增強導光結構薄層之粗糙表面之粗度值以不超光二薄為層，糙表面粗度值以1微米至5微米之間為佳。成^光結構薄層可配合蒸鍍法加上再結晶法來完下維持„ 形成薄膜，再將此薄膜於適當的結晶溫度導先作用二二間以進行再結晶程序，使薄膜轉變為具有1222841 -——- V. Statement (3) The organic electro-active double-sided light-emitting element invented by the material is composed of organic electro-excitation light ^ 2! The first electrode and the second electrode are formed, and the first electrode and the second electrode are formed. ^ = Don't add voltage lines to both sides of the organic electro-optic light emitting material layer. The 2 electrode and the second electrode excite the organic electro-excitation light-emitting material layer to emit light. ^ The f electrode and the second electrode system are transparent electrodes and are provided on the element. 41 The surface of the second electrode is provided with an enhanced guide. Thin layer of light structure. The thickness of the thin layer with enhanced light guide structure should be less than that of the second layer. Secondly, better luminous efficiency can be obtained when the thickness is less than 5 microns. The non-super-light two layers are used as the layer, and the rough surface roughness value is preferably between 1 micrometer and 5 micrometers. The thin layer of light structure can be combined with the evaporation method and the recrystallization method to maintain the formation of a thin film, and then the thin film is applied at an appropriate crystallization temperature to conduct the recrystallization process to make the film into

Ep 且；^表面之結晶化薄膜。此外，亦可藉由喷即、網印、晅Sh t w」精田’ 成呈右相从:"乾钱刻、微粒塗佈和微粒噴灑等方式來形成糙表面的增強導光結構薄層。了解:/士务明的目的、構造特徵及其功能有進一步的配合圖示詳細說明如下： [貝如L方式】之電極上^ =揭路之有機電激雙面發光元件’需於發光侧水加以貝^，同時為了避免再結晶溫度過高，Ep and; ^ crystallized film on the surface. In addition, it is also possible to form a thin layer of enhanced light guide structure with rough surface by spraying, screen printing, and 晅 Sh tw `` Seitian '' into the right phase: " Dry money engraving, particle coating, and particle spraying, etc. . Understand: / Shi Wuming's purpose, structural features and functions are further illustrated with a detailed description as follows: [Beru L method] on the electrode ^ = organic electro-active double-sided light-emitting element that unveils the road, needs to be on the light-emitting side Water, and to avoid recrystallization temperature too high,

第8頁避免傷害ΐίίΖίί表面之增強導光結構薄層’並且要和苒姓曰、土十勺先毛特性，本發明實施例係配合蒸鍍法 * β 、、、口曰曰 1Μ ^ , 1222841 、·.ί· 五、發明說明（4) 所選擇之增強導光結構薄層材料之玻璃轉變溫度不超過 120 T： ° 請參考第1圖，其為本發明第一實施例之結構示意圖。係於平坦之基板1 0表面依序鍍上第一電極2〇、有機激發光#料層3〇與第二電極40，第一電極$〇與第二電極人υ 係之間夾有此有機電激發光材料層3 0，以便利用外加電壓激發其發出光線。其中第一電極2 0和第二電極4 〇係為透明電極並設於元件之啦光側，第二電極表面係設置一增強導光結構薄層5 0 ’其具有粗韆表面以導出光線，如第1圖所示，粗糙表面所形成的各個凹凸不平角度，使大角度光線和小角度光線皆能有效導出元件表面。增強導光結^薄層f由氟化鋁（AIF3)和氮，氮’—雙苯基-氮，氮，—（間—甲基苯）聯f胺（TPD)兩層:結構所組成，依序將A1F3*Tpi)以真二鍍膜的方式蒸鑛於第二電極上，#經過長時間加熱的再結^ =序使TPD因結晶化而轉變為具有導光作用的粗糙表面之 j化薄膜，A1F3則作為緩衝層，減輕TPD因結晶的應力對於有機電激雙面發光元件的影響。王、⑼進一步詳述本發明第一實施例之製作方法，首先 = 玻璃基板放於承載盤上，1T〇玻璃基 ΐ ?“!；’將其置入用來進行蒸鑛的腔體序基/太平/丁處3 °然後於™玻璃基材表面依 …、鍛5不未（nm)的a1F3做為氮，氮，-雙苯基-新μ德笑贫、 b0奈未（nm)之Page 8 to avoid damage to the surface of the thin layer of enhanced light-guiding structure 'and to have the characteristics of the first hair of the family name, ten spoons of soil, the embodiment of the present invention is combined with the evaporation method * β, ,, and mouth 1 ^, 1222841 V. Description of the invention (4) The glass transition temperature of the selected thin layer material of the enhanced light-guiding structure does not exceed 120 T: ° Please refer to FIG. 1, which is a schematic structural diagram of the first embodiment of the present invention. The first electrode 20, the organic excitation light #material layer 30, and the second electrode 40 are sequentially plated on the surface of the flat substrate 10, with the first electrode $ 0 and the second electrode interposed therebetween. The electromechanical excitation light material layer 30 is used to excite it to emit light with an applied voltage. The first electrode 20 and the second electrode 40 are transparent electrodes and are disposed on the light side of the element, and the surface of the second electrode is provided with a thin layer 50 of enhanced light guide structure, which has a rough surface to guide light. As shown in Fig. 1, each uneven angle formed by the rough surface enables both large-angle light and small-angle light to be effectively derived from the surface of the component. The enhanced light guide junction ^ thin layer f is composed of two layers: structure of aluminum fluoride (AIF3) and nitrogen, nitrogen'-bisphenyl-nitrogen, nitrogen,-(m-methylbenzene) diamine (TPD), Sequentially A1F3 * Tpi) was vapor-deposited on the second electrode as a true two-layer coating. # Re-junction after long-time heating ^ = The TPD was transformed into a rough surface with light guiding effect by crystallization. The thin film, A1F3, is used as a buffer layer to reduce the effect of TPD crystal stress on organic double-sided light-emitting elements. Wang and Yu further detailed the manufacturing method of the first embodiment of the present invention. First = the glass substrate is placed on the carrier plate, and 1T0 glass-based? "!; 'Put it into the cavity sequence base for steaming / Taiping / Ding at 3 ° and then on the surface of the ™ glass substrate according to ..., a1F3 5nm (nm) as nitrogen, nitrogen, -bisphenyl-new μdexiao, b0

作為發傳遞一奈;：二;：:讀作為電洞As a hair pass, Iina;: two; :: read as a hole

_丨_ 第9頁 Ϊ222841 五、發明說明（5) 光層和電子傳遞層，以組成有機電激發光材料層。再墓鍍上〇::，5奈米（nm)之氟化鋰（LiF)與1〇奈米（nm)之鋁作為透明的第-二電極，最後於第二電極上蒸鍍5〇(nm)之A1F3緩衝層和450奈米（nm)之TPD導光層來組成增強導光結構薄層。於元件製作完成之後需先進行蓋板的封裝，再將封裝後之元件於攝氏90度加熱12小時完成TPD的再結晶程序，使其產生，有結晶化突起區域的粗糙表面。並且為達到更好的導士效果’結晶化突起區域之粗糙表面粗度值以i微米之間為佳。 Μ ㈣丨ί 後續之比較和數據量㈨，本發明實施例係 =制，、、、σ阳耘序之貫驗條件，埤TpD導光層僅形成部分結 STM Λ較/晶區和無結晶區的性質。請參考附件1，^ 光層經再結晶之後的實體照片，其中直工圓形區域即為結晶區，由於結晶化突起區域的光散色效應:产其呈現白色。另比較導光性質，請參考 =政即為結晶，，由膜厂”旦、則：f層的，體知、片，圓形區域 W米，由昭片結晶區表面高低落差小於多，顯示TPD導光度較無結晶區高出許和鉦、妹曰區於士先層的k異¥光性質。進一步測量結晶區一。阳π 、相同電流值下之實際亮度差異，請參考表表一_ 丨 _ Page 9 Ϊ222841 V. Description of the invention (5) Optical layer and electron transfer layer to form organic electro-excitation light material layer. The tomb was plated with 0 ::, lithium fluoride (LiF) of 5 nanometers (nm) and aluminum of 10 nanometers (nm) as the transparent second electrode, and finally 50% was evaporated on the second electrode. nm) A1F3 buffer layer and 450 nanometers (nm) TPD light guide layer to form a thin layer of enhanced light guide structure. After the component manufacturing is completed, the cover plate must be packaged first, and then the packaged component is heated at 90 degrees Celsius for 12 hours to complete the TPD recrystallization process to produce a rough surface with crystallized protrusions. In order to achieve a better guide effect, the rough surface roughness of the crystallized protrusion region is preferably between i μm. Μ ㈣丨 ί Subsequent comparison and data volume, the embodiment of the present invention is based on the consistent conditions of the manufacturing process, the TpD light guide layer only forms part of the junction STM Λ / crystalline region and no crystal The nature of the district. Please refer to Appendix 1, ^ Photograph of the solid layer after recrystallization. The straight circular area is the crystalline area. Due to the light scattering effect of the crystalline protrusion area, it appears white. For comparison of light-guiding properties, please refer to = the crystal is the crystal, from the film factory "Dan, then: the f-layer, the body, the film, the circular area of W meters, from the surface of the crystal area of the film is less than the difference in height, showing The TPD light transmittance is higher than that of the non-crystallized areas in the k-slight and optical properties of the Yu Shixian layer in the Hehe and Mei districts. The crystallized area is further measured. The actual brightness difference at the same current value, please refer to Table 1.

1222841 五、發明說明（6) 第一實施例ITO/AlF3/NPB/Alq3/LiF/Al/AlF3/TPD(450nm) 9〇t for 12hr 量測區電流值(mA) 無結晶區(nit) 結晶區(nit) 亮度增加(％) 1 1.8 7.9 12.5 58.3 ^ 2 1.8 6.5 11 69.2 — 3 1.9 7.6 12.1 59.2 4 2.1 7 11.3 61.4 由表一可知，本發明第一實施例其外部效率的增加率平均值可達到6 2%左右。同時本發明可調整增強導光結構薄層的厚度和再結晶之時間以達到所需之亮度效果。本發明第二實施例係於I TO玻璃基材表面依序蒸鍍5奈米（nm)的A1FS為電洞注入層、60奈米（nm)之NPB作為電洞傳遞層以及60奈米（nm)之Alqs為聲光層和電子傳遞層，以組成有機電激發光材料層。再蒸鍍上〇· 5奈米（nm)之UF與1〇奈米Um)之紹作為透明的第二電極，最後於第二電極^蒗鍍5〇(nm)之A%衝層和9 50奈米（nm)之TPD導光層來組成增強導光結構薄層。於元件製作完成之後需先進行蓋板的^ I 再將封I後之元件於攝氏度加熱4小時，使tpd導光層产生結晶區。測量第二實施例的結晶區和無結晶區之實際秀度差異，請參考表二。、表二1222841 V. Description of the invention (6) First example ITO / AlF3 / NPB / Alq3 / LiF / Al / AlF3 / TPD (450nm) 90 ot for 12hr Measurement area current value (mA) No crystal area (nit) Crystal Zone (nit) Brightness increase (%) 1 1.8 7.9 12.5 58.3 ^ 2 1.8 6.5 11 69.2 — 3 1.9 7.6 12.1 59.2 4 2.1 7 11.3 61.4 As can be seen from Table 1, the average increase rate of the external efficiency of the first embodiment of the present invention Can reach 6 2%. At the same time, the present invention can adjust the thickness of the thin layer of the enhanced light guide structure and the time of recrystallization to achieve the desired brightness effect. The second embodiment of the present invention sequentially deposits 5 nm (nm) A1FS as a hole injection layer, 60 nm (nm) NPB as a hole transfer layer, and 60 nm ( Alqs (nm) is an acousto-optic layer and an electron transfer layer to form an organic electro-excitation light material layer. Then 5% of nanometer (nm) UF and 10 nanometers (Um) were deposited as a transparent second electrode. Finally, a 50% (nm) A% layer and 9% were deposited on the second electrode. 50 nanometer (nm) TPD light guide layer to form a thin layer of enhanced light guide structure. After the components are manufactured, the cover plate ^ 1 is required to be heated, and then the sealed components are heated at 4 ° C for 4 hours, so that the crystalline region of the tpd light guide layer is generated. Please refer to Table 2 to measure the actual difference between the crystalline region and the non-crystalline region in the second embodiment. , Table II

12228411222841

五、發明說明（7) 第二實施例ITO/AlF3/NPB/Alq3/LiF/Al/AlF3/TPD(950nm) 90°C for4hr 量測區電流值(mA) 無結晶區(nit) 結晶區(nit) 亮度增加(％) 1 7.7 ； 21.9 48.7 122.4 2 7.2 19.1 40.4 111.5 3 6.6 20.1 44.5 121.4 — 由表二可知，本發明第二實施例其外部效率的增加平均值可達到118%左右。 9 平本發明第三實施例之製程和結構係雷同於第一餘和弟一貫施例，芦差異在於TPD導光層為1 45 0奈米（nm)， =及再結晶程序係於攝氏9 〇度加熱5小時。經測量第二每施例的結晶區和無結晶區之實際亮度差異，只矣二乂私一所不。V. Description of the invention (7) Second embodiment ITO / AlF3 / NPB / Alq3 / LiF / Al / AlF3 / TPD (950nm) 90 ° C for 4hr Current value in measurement area (mA) No crystallization area (nit) Crystal area ( nit) Brightness increase (%) 1 7.7; 21.9 48.7 122.4 2 7.2 19.1 40.4 111.5 3 6.6 20.1 44.5 121.4 — As can be seen from Table 2, the average increase in external efficiency of the second embodiment of the present invention can reach about 118%. 9 The process and structure of the third embodiment of the present invention are the same as those of the first and second embodiments. The difference is that the light guide layer of the TPD is 1 450 nm (nm), and the recrystallization procedure is 9 ° C. 0 degree heating for 5 hours. By measuring the actual brightness difference between the crystalline and non-crystalline regions of each of the second examples, only one is used.

平均佶可知’本發明第二貫施例其外部效率的增力口率 J值可達到90%左右。千由上述之測量結果得知，相較於先前技術本發明可大On average, it can be known that the second embodiment of the present invention has a value J of external power boosting ratio of about 90%. It is known from the above measurement results that the present invention can be significantly larger than the prior art.

:發明~ 巾田土也提高有機率 ’並且能與發明可廣泛應子製造層之多電數雙面發光、雖然本發 2限定本發明精神和範圍内專利保護範圍為準。電激雙目前的用於各光子型元件和明之較 ’任何，當可須視本面發光有機電種有機有機電小分子佳實施熟習相作些許說明書元件第激發光電激雙激雙面有機電例揭露關技藝之更動所附之二電極方向元件製程相面發光元件發光元件、激雙面發光如上所述，者，在不脫與潤飾，因申請專利範的的發光效容。同時本，如包含載南分子有機元件。然其並非用離本發明之此本發明之圍所界定者 1222841 圖式簡單說明第1圖為本發明第一實施例之結構示意圖；附件1為TPD導光層經再結晶之後的實體照片；及附件2為實際點亮元件之TPD導光層的實體照片。: Invention ~ The soil also improves the organic rate ′ and can be used with the invention. It can be widely used to produce multiple layers of electricity. Double-sided light emission. Although this invention limits the spirit and scope of the invention, the scope of patent protection shall prevail. The current excitation double is currently used for each photonic element and it is better than any. When it is necessary to treat the light emitting organic electricity type organic organic electricity small molecules, it is best to implement familiarity. Some instructions on the element excitation photoexcitation double excitation double-sided organic electricity. The example reveals the change of the Guan technology and the two-electrode directional element manufacturing process. The two-sided light-emitting element light-emitting element and the double-sided light-emitting element are as described above. At the same time, such as containing organic molecules containing molecules. However, it is not a brief description of the present invention, which is defined by the scope of the present invention 1222841. The first diagram is a schematic diagram of the structure of the first embodiment of the present invention; Attachment 1 is a physical photo of the TPD light guide layer after recrystallization; And Attachment 2 is a physical photo of the TPD light guide layer of the actual lighting element.

第14頁【圖式符號說明 ] 10 基板 20 第一電極 30 有機電激發光材料層 40 第二電極 50 增強導光結構薄層Page 14 [Explanation of Symbols] 10 Substrate 20 First electrode 30 Organic electroluminescent light-emitting material layer 40 Second electrode 50 Thin layer for enhancing light guide structure

Claims

1222841 六、申請專利範圍 1 · 一種有機電激雙面發光元件，係由一有機電激發光材科層、一第一電極與一第二電極所形成，其特徵在於：謗第一電極與該第二電極係分別設於該有機電激發光枒料層之兩側，施加電壓於該弟一電極與該第二電極以數於該有機電激發光材料層發出一激發光線，該第一電極和華第二電極係為透明電極，該第二電極表面設置一增強導光結構薄層丨，其具有一粗蟑表面形成各個凹凸不平角度，使該激發光線能有效經由該增強導光結構導出。 2 ·.如申請專利範圍第1項所述之有機電激雙面發光元件，其中該增強導光結構薄層係包含一結晶化薄膜，且該薄瞑材料之玻璃轉變溫度不超坶攝氏120度。 3 ·如申請專利範圍第2項所述之有機電激雙面發光元件， *中該結晶化薄膜係為經過再結晶之氮，氮，-雙苯基、氮，氮’-(間-f基苯）聯苯胺（TPD)層。 4.如申請專利範!圍第1項所述之有機電激雙面發光元件，其中該增強導光結構薄層係由一緩，衝層和一結晶化薄所組成。、 5 ·如申請專利範圍第4項所述之有機電激雙面發光元件，其中該緩衝層係為氟化鋁（A1F3)層。 6 ·如申請專利範圍第4項所述之有機電激雙面發光元件，其中該結晶化薄膜係為經過再結晶之氮，氮，-雙苯基、氮，氮’-（間〜曱基苯）聯苯胺（TPD)層。 7 ·如申請專利範圍第4項所述之有機電激雙面發光元件，其中该結晶化薄膜之粗度值係為1微米至5微米。1222841 VI. Scope of patent application1. An organic electro-active double-sided light-emitting element is formed by an organic electro-excitation optical material layer, a first electrode, and a second electrode, which is characterized in that the first electrode and the A second electrode is respectively disposed on both sides of the organic electro-excitation photoresist layer, and a voltage is applied to the first electrode and the second electrode to emit an excitation light in the organic electro-excitation photo-material layer. The first electrode The second electrode of Hehua is a transparent electrode. The surface of the second electrode is provided with a thin layer of enhanced light guide structure. It has a rough surface to form various uneven angles, so that the excitation light can be effectively led out through the enhanced light guide structure. . 2. The organic electro-active double-sided light-emitting device according to item 1 of the scope of patent application, wherein the thin layer of the enhanced light guide structure includes a crystalline film, and the glass transition temperature of the thin material is not higher than 120 ° C degree. 3 · The organic electro-active double-sided light-emitting device according to item 2 of the scope of patent application, wherein the crystallized thin film is recrystallized nitrogen, nitrogen, -bisphenyl, nitrogen, nitrogen '-(m-f Phenyl) benzidine (TPD) layer. 4. The organic electro-active double-sided light-emitting element according to claim 1 in claim 1, wherein the thin layer of the enhanced light guide structure is composed of a buffer layer, a thin layer, and a thin crystallized layer. 5. The organic electro-active double-sided light-emitting device according to item 4 of the scope of patent application, wherein the buffer layer is an aluminum fluoride (A1F3) layer. 6. The organic electro-active double-sided light-emitting device according to item 4 in the scope of the patent application, wherein the crystallized thin film is recrystallized nitrogen, nitrogen, -bisphenyl, nitrogen, nitrogen '-(meta-fluorenyl) Benzene) benzidine (TPD) layer. 7. The organic electro-active double-sided light-emitting device according to item 4 of the scope of the patent application, wherein the thickness of the crystallized film is 1 micrometer to 5 micrometers.

第15頁 1222841 六、申請專利範圍 8. 如申請專利範圍第1項所述之有機電激雙面發光元件，其中該增強導光結構薄層之該粗糙表面之粗度值係為1 微米至5微米。 9. 如申請專利範圍第1項所述之有機電激雙面發光元件，其中該增強導光結構薄層之厚度係小於5 0微米。 1 0.如申請專利範圍第1項所述之有機電激雙面發光元件，其中該增強導光結構薄層之厚度較佳值係小於5微米。 11如申請專利範圍第1項所述之有機電激雙面發光元件， ;其中該有機電激發光材料層，係包含電洞注入層、電洞傳遞層、發光層、電子傳遞層和電子注入層之任意 :組合。 -；i 12,¾如申請專利範圍第11項所述之有機電激雙面發光元丨件，其中該有機電激發光材料層更包含載子製造層。Page 15 1222841 VI. Patent Application Range 8. The organic electroluminescent double-sided light-emitting element described in item 1 of the patent application range, wherein the rough surface of the thin layer of the enhanced light guide structure has a roughness value of 1 micrometer to 5 microns. 9. The organic electro-active double-sided light-emitting device according to item 1 of the scope of patent application, wherein the thickness of the thin layer of the enhanced light guide structure is less than 50 microns. 10. The organic electro-active double-sided light-emitting device according to item 1 of the scope of patent application, wherein the thickness of the thin layer of the enhanced light guide structure is preferably less than 5 microns. 11 The organic electro-active double-sided light-emitting device according to item 1 of the scope of the patent application, wherein the organic electro-active light-emitting material layer includes a hole injection layer, a hole transfer layer, a light-emitting layer, an electron transfer layer, and an electron injection Arbitrary layers: combination. -; I 12, ¾ The organic electro-active double-sided light-emitting element according to item 11 of the scope of application patent, wherein the organic electro-active light-emitting material layer further includes a carrier manufacturing layer.

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