1221199 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於具有使多個探測端子接觸於半導體裝置 的1C端子功能的探測裝置，設有該探測裝置的半導體裝置 的檢驗裝置，以及使多個探測端子接觸於半導體裝置的1C 端子實施檢驗的半導體裝置的檢驗方法。 本發明的探測裝置，半導體裝置的檢驗裝置及檢驗方 法用於例如晶圓狀態（w a f e Γ 1 e V e Γ )晶片尺寸封裝體（ Chip Size Package，以下簡稱爲“ CSP” ）的檢驗。 【先前技術】 以往，在作爲半導體裝置的積體電路（Integrated Circuit，以下簡稱爲“ 1C” ）的製作工序中，有以下工序 :藉由探測裝置使得多個探測端子接觸於形成在1C上的1C 端子，使用檢驗裝置，藉由探測端子及1C端子將電信號等 供給於1C，實行1C的電特性檢驗。作爲探測裝置的例子有 記載在日本特開平11- 2以8號公報中。1221199 (1) Description of the invention [Technical field to which the invention belongs] The present invention relates to a detection device having a 1C terminal function of bringing a plurality of detection terminals into contact with a semiconductor device, a semiconductor device inspection device provided with the detection device, and A semiconductor device inspection method in which a plurality of detection terminals are brought into contact with a 1C terminal of a semiconductor device. The detection device, the semiconductor device inspection device and the inspection method of the present invention are used for inspection of, for example, a wafer state (waf e Γ 1 e V e Γ) chip size package (Chip Size Package, hereinafter referred to as "CSP"). [Prior Art] Conventionally, in the manufacturing process of an integrated circuit (hereinafter referred to as "1C") as a semiconductor device, there are the following steps: a plurality of detection terminals are contacted with a detection device formed on the 1C by a detection device. The 1C terminal uses an inspection device to supply electrical signals and the like to the 1C through the detection terminal and the 1C terminal, and the 1C electrical characteristic test is performed. An example of the detection device is described in Japanese Patent Application Laid-Open No. 11-2 and No. 8.
連續對多個1C進行檢驗場合，探測裝置的探測端子 與1C端子的對位是這樣進行的：在進行最初1C檢驗前，藉 由光學方法進行水平方向的對位，接著，藉由壓力感測器 或光學方法等進行高度方向的對位，其位置資訊記憶在探 測裝置中，以後的1C端子與探測端子的接觸全部在相同高 度條件下連續地實行。該方法的前提是被連續地檢驗的1C 的1C端子高度處于一定範圍內。近年，使用晶圓狀態CSP -5- (2) (2)1221199 作爲半導體裝置的封裝體。晶圓狀態c SP是以晶画狀態組 裝在封裝體者（參照例如日本特開2 0 0 0 - 2 6 0 9 1 0號公報） 〇 弟13圖是表不晶圓狀態CSP —'例的截面圖。 在半導體基板81上形成電晶體等半導體元件（圖示省 略），再在其上藉由絕緣膜（圖示省略）形成例如由鋁構 成的1C墊83以及金屬配線（圖示省略）。再在其上黏結由 例如薄膜狀的聚醯亞胺所構成的用於電氣連接及電氣配線 的配線基板8 5。在配線基板8 5上與I C墊8 3相對應，預先形 成導電材料87。在配線基板85及導電材料87上形成例如由 Cu構成的銅配線層89及銅凸塊91。銅配線層89及銅凸塊91 又稱謂再配線層。 在配線基板8 5上，銅配線層8 9上以及銅凸塊9 1的側面 ，形成有密封樹脂93。例如，在樹脂密封用的金屬膜內， 設置晶圓狀態的半導體基板8 1，密封樹脂，及臨時用薄膜 (用於不使樹脂接觸於金屬膜的材料），密封樹脂93被加 熱壓縮，直到使得銅凸塊91從密封樹脂93表面出現程度。 在銅凸塊9 1上藉由機械方法固結例如焊錫球，作爲I C端子 。1C墊83和1C端子15藉由導電材料87、銅配線層89及銅凸 塊9 1實現電氣式連接。 作爲晶圓狀態C SP的特徵之一，可以列舉在其製作工 序中，密封樹脂9 3的形成，直到IC端子的形成的工序以 晶圓狀態進行，此後，將晶圓切割爲各1C片。考慮利用這 個特徵，在將晶圓切割爲各1C片前，以晶圓狀態實施1C的 -6- (3) (3)1221199 電氣特性檢驗。 但是，如第14圖所示，在晶圓狀態CSP的1C端子15 ’ 是在晶圓上黏結配線基板8 5，再在配線基板8 5上形成I C端 子1 5，因此，IC端子1 5的高度具有大的偏差。再者， 如第1 5圖所示，在將晶圓切割爲各1C片前的晶圓狀態’ 因密封樹脂93收縮爲起因產生彎曲，由於該彎曲，晶圓7 發生彎曲，由於該彎曲的影響，晶圓7的中央附近與外周 區域的1C端子15的高度也發生偏差，因此，晶圓7整體的 I C端子1 5的高度具有更大的偏差。 在1C的電氣特性檢驗中，當使得探測端子接觸於晶圓 狀態CSP的1C端子時，使用以1C端子高度爲一定作爲前提 的以往探測裝置實施電氣特性檢驗場合，在1C端子高度低 的1C， 1C端子與探測端子不接觸，因此，存在不能進行 正確檢驗、誤將合格品判定爲不合格品的問題。 再者，在1C端子高度高的1C，使得探測端子過強壓 抵1C端子，存在使得1C端子損傷或變形的問題。再者，由 於探測端子過強壓抵1C端子，會使探測端子的位置精度不 正確，而存在對以後的1C檢驗帶來更不正確結果的問題。 本發明的目的，是有鑒於上述背景技術所存在的問題 而提供即使是如上所述那樣1C端子高度偏差大的半導體裝 置例如晶圓狀態CSP等也能實現1C端子與探測端子穩定接 觸的探測裝置，半導體裝置的檢驗裝置及檢驗方法。 【發明內容】 (4) (4)1221199 爲了達成上述目的，本發明提出一種探測裝置，是具 有藉由控制部控制，使得驅動機構被驅動，使得多個探測 端子接觸於半導體裝置的1C端子的功能，其特徵爲：設有 接觸檢測機構，藉由上述驅動機構的驅動，以使上述探測 端子接觸上述1C端子，當上述探測端子與上述1C端子接近 時，接觸檢測機構用於檢測上述任一個探測端子與上述I C 端子的接觸；上述控制部控制驅動上述驅動機構，從上述 接觸檢測機構檢測到上述探測端子與上述1C端子接觸時刻 ，使得上述探測端子與上述1C端子朝著相互接近的方向僅 移動預先設定的所定量。 爲了達成上述目的，本發明提出一種半導體裝置的檢 驗裝置是設有探測裝置及檢驗部，上述探測裝置使得多個 探測端子接觸於半導體裝置的1C端子，上述檢驗部用於藉 由上述探測端子和上述1C端子進行半導體裝置的電氣檢驗 ，其特徵爲：設有上述本發明之探測裝置作爲上述探測裝 置。 爲了達成上述目的，本發明提出一種半導體裝置的檢 驗方法，是使得多個探測端子接觸於半導體裝置的1C端子 實施檢驗，其特徵爲：包含以下工序： 使得上述探測端子與上述1C端子接近以使上述探測端 子接觸上述1C端子時，檢測任一個上述探測端子與上述1C 端子接觸； 從檢測到上述接觸時刻，使得上述探測端子與上述1C 端子朝相互接近方向移動，僅移動預先設定的所定量，使 -8- (5) (5)1221199 得上述探測端子與上述1C端子接觸。 在本發明所關於的探測裝置，半導體裝置的檢驗裝置 ，及半導體裝置的檢驗方法中，使得探測端子與1 c端子接 近以使上述探測端子接觸上述1C端子時，檢測任一個探測 端子與1C端子接觸，從檢測到上述接觸時刻，使得上述探 測端子與上述1C端子朝著相互接近的方向移動，僅移動預 先設定的所定量。因此，能提高探測端子與1C端子接觸的 正確性。再者，由於從檢測到上述探測端子與上述1C端子 接觸時刻，使得上述探測端子與上述1C端子朝著相互接近 方向移動，僅移動預先設定的所定量，因此，能防止探測 端子過強壓抵1C端子而導致1C端子破損等。這樣，能實現 1C端子與探測端子的穩定接觸。 【實施方式】 以下說明本發明之實施形態。 在本發明之探測裝置中，較佳爲，設有探測端子位置 測定裝置及1C端子位置測定裝置，上述探測端子位置測定 裝置測定檢驗開始前的上述探測端子的高度位置，上述1C 端子位置測定裝置取樣測定檢驗開始前的上述1C端子的高 度位置；當藉由上述驅動機構的驅動，上述探測端子與上 述1C端子接近時，上述控制部根據上述探測端子位置測定 裝置及1C端子位置測定裝置的測定結果，控制上述驅動機 構，至少在位於與上述探測端子的高度位置最接近的高度 位置的上述1C端子與上述探測端子接觸的區間，以低速動 -9 - (6) (6)1221199 作使上述探測端子與上述1C端子接近；上述接觸檢測機構 在上述驅動機構低速動作開始時，開始檢測上述探測端子 與上述1C端子的接觸。 在本發明之半導體裝置的檢驗方法中，較佳爲，測定 檢驗開始前的上述探測端子的高度位置，取樣測定檢驗開 始前的上述1C端子的高度位置；當上述探測端子與上述1C 端子接近時，根據上述測定的探測端子的高度位置及1C端 子的高度位置，至少在位於與上述探測端子的高度位置最 接近的高度位置的上述1C端子與上述探測端子接觸的區間 ，以低速動作使上述探測端子與上述1C端子接近；在上述 低速動作開始時，開始檢測上述探測端子與上述1C端子的 接觸。 至少在位於與上述探測端子的高度位置最接近的高度 位置的上述1C端子與上述探測端子接觸的區間，以低速動 作使上述探測端子與上述1C端子接近，能正確進行以下動 作：從檢測到探測端子與1C端子的接觸時刻起，使得上述 探測端子與上述1C端子朝著相互接近方向僅移動預先設定 的所定量。 再者，在從開始使探測端子與1C端子接近的動作到移 向低速動作區間，能以高速動作進行，因此，與以低速動 作進行使探測端子與1C端子接近的動作全區間場合相比， 能縮短檢驗時間。 在本發明之探測裝置中，較佳爲，在達到預先設定的 限制量前，上述控制部使得上述探測端子與上述1C端子接 -10- (7) (7)1221199 近’藉由上述接觸檢測機構沒有檢測到上述探測端子與上 述1C端子接觸場合，停止上述探測端子與1C端子的接近。. 在本發明之半導體裝置的檢驗方法中，較佳爲，在 達到預先設定的限制量前，使得上述探測端子與上述1C端 · 子接近，沒有檢測到上述探測端子與上述IC端子接觸場合 ，停止上述探測端子與IC端子的接近。 由此，能防止探測端子過強壓抵半導體裝置而導致其 損傷。 _ 在本發明之探測裝置中，作爲上述接觸檢測機構的第 一樣式，可以列舉如下，其包含： 配線部，用於使半導體裝置爲一定電位； 電源部，用於向上述探測端子供給電流或電壓； 電氣測定部，用於測定上述探測端子的電壓或電流； 接觸判斷部，根據上述電氣測定部的輸出信號，檢測 上述探測端子與上述1C端子的接觸。 作爲本發明之半導體裝置的第一檢驗方法，可以列 ® 舉如下，其中： 使半導體裝置爲一定電位； 向上述探測端子供給電流或電壓； 監視上述探測端子中的電壓變化或電流變化，檢測上 · 述探測端子與上述1C端子的接觸。 由此，使上述探測端子與上述1C端子接近以便使得探 測端子與1C端子接觸時，能檢測任一個探測端子與1C端子 的接觸。 -11 - (8) (8)1221199 在本發明之探測裝置之接觸檢測機構的第一樣式中， 較佳爲，上述配線部包含配置上述半導體裝置的載物臺。 在本發明之半導體裝置的第一檢驗方法中，較佳爲 ^ ， 藉由使得配置半導體裝置的載物臺爲一定電位，使半 · 導體裝置爲一定電位。 由此，很容易使半導體裝置爲一定電位。 在本發明之探測裝置之接觸檢測機構的第一*樣式中， 較佳爲，在每個探測端子設有電氣測定部。 _ 在本發明之半導體裝置的第一檢驗方法中，較佳爲 ，對每個探測端子監視上述探測端子中的電壓變化或電流 變化。 由此，即使包含某個1C端子高度突出那樣的不良品1C 場合，也能防止探測端子過強壓抵半導體裝置而導致其損 在本發明之探測裝置中，作爲上述接觸檢測機構的 第二樣式，可以列舉如下，其包含： Φ 上述接觸檢測機構設有配置在上述探測端子附近的感 測器端子，以及用於檢測探測端子與感測器端子電氣連接 的短路檢測部； 感測器端子配置在這樣的位置：在上述探測端子不與 · 上述1C端子接觸狀態下，該感測器端子與探測端子有間隔 ，且因檢驗端子與1C端子接觸爲起因，該感測器端子與探 測端子接觸。 作爲本發明之半導體裝置的第二檢驗方法，可以列· -12 - (9) (9)1221199 舉如下，其中： 將感測器端子配置在這樣的位置··在上述探測端子不 與上述1C端子接觸狀態下，該感測器端子與上述探測端子 有間隔，且因上述探測端子與1C端子接觸爲起因，該感測 器端子與探測端子接觸； 藉由檢測上述探測端子與上述感測器端子的電氣接續 ，檢測上述探測端子與上述1C端子的接觸。 由此，使得上述探測端子與上述1C端子接近以便使得 探測端子與1C端子接觸時，能檢測某個探測端子與1C端子 的接觸。再者，即使半導體裝置或1C端子或雙方的電位處 於不定狀態，也能檢測探測端子與1C端子的接觸。 在本發明之探測裝置之接觸檢測機構的第二樣式中， 較佳爲，上述接觸檢測機構在每個探測端子設有感測器端 子。 在本發明之半導體裝置的第二檢驗方法中，較佳爲 ，對每個探測端子配置上述感測器端子，對每個探測端子 檢測上述探測端子與上述感測器端子的電氣連接。 由此，即使包含某個1C端子高度突出那樣的不良品1C 場合，也能防止探測端子過強壓抵半導體裝置而導致其損 下面參照附圖，更詳細描述本發明實施例。 第1圖是表示半導體裝置的檢驗裝置的一實施例的槪 略構成圖，第2圖是表示該實施例的方塊圖。 檢驗裝置1由探測裝置3及檢驗器（檢驗部）5構成， -13- 1221199 端電 C 勺 I ήΜ 的1C 置行 裝進 體子 導端 半1C 觸及 接子 子端 端測 測探 探由 個藉 多於 得 用 使有 於設 10)置驗 (1裝檢 測’ 探子 氣檢驗的檢驗部。在第1圖和第2圖中，用於供給爲進行1c 的電氣檢驗所設定的檢驗信號等、判定檢驗結果的手段圖 示省略。 在探測裝置3設有載物臺9，用於配置例如切斷前的形 成許多晶圓狀態C S P的晶圓7 (在第2圖中圖示省略）。藉 由沒有圖示的真空吸引機構，晶圓7被吸附在載物臺9上。 載物臺9的配置晶圓7的部分藉由接地配線（配線部）1 1， 與接地電位（一定電位）連接。 切割晶圓7，成爲一個晶圓狀態CSP的晶片區域13排 列成陣列狀，在各晶片區域1 3形成IC端子1 5。在第1圖中 ，例示對一個晶圓狀態CSP形成六個1C端子15。 設置用於使載物臺9沿上下方向移動的載物臺高度驅 動單元17。載物臺高度驅動元件17包括用於使載物臺9移 動的驅動機構1 9，以及用於控制驅動機構的控制部2 1 (參 照第2圖）。 與載物臺9的配置晶圓7的面對向，配置設有六根探測 端子25的探測插卡（probe card) 23。探測端子25被支承 在探測卡插卡23上，使得探測端子25頂端與配置在晶片區 域13內的六個1C端子15相對應。探測插卡23的高度位置被 固定。 在探測裝置3配置壓力感測器27作爲1C端子位置測定 手段，用於取樣測定1C端子1 5的高度位置。在探測插卡23 -14 - (11) (11)1221199 附近配置電何耦i合裝置（Charge Coupled Device，以下簡 記爲“ CCD” ）感測器29，作爲探測端子位置測定手段， 用於例如光學測定探測端子25頂端的高度位置。壓力感測 器27的輸出信號以及CCD感測器29的輸出信號送向載物臺 高度驅動元件1 7的控制部2 1。 在檢驗器5設有六個施加電流測定電壓部3 1作爲電氣 測定部。在每個探測端子2 5設有施加電流測定電壓部3 1， 探測端子2 5與施加電流測定電壓部3 1是被電氣式地連接。 第3圖是表示探測端子2 5及施加電流測定電壓部3 1的 電路圖。 施加電流測定電壓部3 1由開關3 3、作爲電源部的恒流 源3 5、以及作爲電氣測定部的電壓計3 7所構成。開關3 3的 接通/斷開的切換由控制部2 1控制。開關3 3的一端子與探 測端子25連接，另一端子與恒流源35連接。電壓計37並聯 連接在開關3 3與恒流源3 5之間的配線上。在例如所測定電 壓比預先設定的規定電壓小的場合，施加電流測定電壓 部3 1的接觸判定信號是邏輯値爲0的電信號，在規定電壓 以上場合，接觸判定信號是邏輯値爲1的電信號。恒流源 3 5是供給例如一 1 〇 # A (微安）的恒流。恒流源3 5既可以 在每個施加電流測定電壓部3 1設置，也可以幾個施加電流 測定電壓部3 1共用。 在本實施例中，由P型基板構成件作爲晶圓7成爲檢驗 對象。如第1圖所示，晶圓7藉由載物臺9及接地配線1 1與 接地電位接續。因此，晶圓7是陰極被連接於1C端子15、 -15- (12) (12)1221199 陽極與連接於接地電位的ρ η面結型二極管等價。 回到第1圖和第2圖繼續說明，在檢驗部5設有接觸判 斷部3 9，用於根據施加電流測定電壓部3 1的接觸判斷信號 ，檢測任一個1C端子15與探測端子25的接觸。可以使用例 如六輸入“或”閘邏輯電路作爲接觸判斷部3 9。接觸判斷 部3 9的輸出信號送向載物臺高度驅動單元1 7的控制部2 1。 在該實施例中，本發明的接觸檢測機構的第一樣式由 開關3 3、設有恒流源3 5及電壓計3 7的施加電流測定電壓部 3 1、載物臺9、接地配線1 1、以及接觸判斷部3 9所構成。 第4圖是表示該實施例的電氣檢驗時動作的流程圖。 參照第1 -4圖說明本實施例的電氣檢驗時動作。藉由對該 動作的說明，說明本發明的半導體裝置的第一檢驗方法的 一實施例。 將一晶圓作爲一組，對每一組實行一連串動作，開始 I C的電氣檢驗（組開始）。在檢驗開始時，載物臺9配置 在初始値高度位置，開關33斷開。藉由CCD感測器29測定 探測端子25頂端的高度位置及水平方向的位置，將上述探 測端子2 5頂端的高度位置及水平方向的位置資訊送向載物 臺高度驅動單元1 7的控制部2 1 (步驟S 1 )。 藉由控制部2 1，驅動機構1 9被驅動，使得載物臺9上 昇，藉由壓力感測器27的檢測信號，取樣測定1C端子15的 高度位置（步驟S2 )。此後，使得載物臺9回到初始値 高度位置。When multiple 1C inspections are performed consecutively, the alignment of the detection terminal of the detection device and the 1C terminal is performed as follows: before the first 1C inspection, the horizontal alignment is performed optically, and then the pressure sensing The device or optical method is used to perform alignment in the height direction, and its position information is stored in the detection device. All subsequent contacts between the 1C terminal and the detection terminal are continuously performed under the same height condition. The premise of this method is that the 1C terminal height of the 1C that is continuously tested is within a certain range. In recent years, a wafer state CSP -5- (2) (2) 1221199 has been used as a package for a semiconductor device. The wafer state c SP is assembled in a package in a crystal state (refer to, for example, Japanese Patent Laid-Open Nos. 2 0 0-2 6 0 9 1 0). The figure 13 shows the wafer state CSP—'for example Sectional view. A semiconductor element such as a transistor (not shown) is formed on the semiconductor substrate 81, and a 1C pad 83 made of, for example, aluminum and a metal wiring (not shown) are formed on the semiconductor substrate 81 by an insulating film (not shown). Further, a wiring board 85 made of, for example, a polyimide in the form of a thin film for electrical connection and electrical wiring is adhered thereto. A conductive material 87 is formed in advance on the wiring substrate 85 corresponding to the IC pad 83. A copper wiring layer 89 and a copper bump 91 made of, for example, Cu are formed on the wiring substrate 85 and the conductive material 87. The copper wiring layer 89 and the copper bump 91 are also called a redistribution layer. A sealing resin 93 is formed on the wiring substrate 85, the copper wiring layer 89, and the side surfaces of the copper bumps 91. For example, in a metal film for resin sealing, a semiconductor substrate 81 in a wafer state, a sealing resin, and a temporary film (a material for preventing the resin from contacting the metal film) are provided, and the sealing resin 93 is heated and compressed until The copper bumps 91 are caused to appear to the extent from the surface of the sealing resin 93. The copper bump 91 is mechanically consolidated, such as a solder ball, as an IC terminal. The 1C pad 83 and the 1C terminal 15 are electrically connected by a conductive material 87, a copper wiring layer 89, and a copper bump 91. As one of the characteristics of the wafer state C SP, the formation process of the sealing resin 93 in the manufacturing process is performed until the formation of the IC terminals is performed in the wafer state, and thereafter, the wafer is cut into 1C pieces. Consider using this feature, and before dicing the wafer into individual 1C pieces, perform a 6- (3) (3) 1221199 electrical characteristic test of the 1C in the wafer state. However, as shown in FIG. 14, in the wafer state, the 1C terminal 15 ′ of the CSP is bonded to the wiring substrate 85 on the wafer, and then the IC terminal 15 is formed on the wiring substrate 85. Therefore, the IC terminal 15 The height has a large deviation. In addition, as shown in FIG. 15, the wafer state before the wafer is cut into individual 1C wafers is caused by the shrinkage of the sealing resin 93, and the warpage occurs due to the shrinkage of the sealing resin 93. Due to the warpage, the wafer 7 is warped. As a result, the height of the 1C terminal 15 in the vicinity of the center of the wafer 7 and the peripheral area also varies, and therefore, the height of the IC terminal 15 in the entire wafer 7 has a larger deviation. In the 1C electrical characteristic test, when the detection terminal is brought into contact with the 1C terminal of the wafer-state CSP, the electrical characteristic test is performed using a conventional detection device that presupposes that the 1C terminal height is constant. When the 1C terminal height is 1C, The 1C terminal is not in contact with the detection terminal. Therefore, there is a problem that a correct inspection cannot be performed and a qualified product is erroneously determined as a defective product. Furthermore, in the case where the height of the 1C terminal is 1C, the detection terminal is excessively pressed against the 1C terminal, and there is a problem that the 1C terminal is damaged or deformed. Moreover, because the detection terminal is pressed too strongly against the 1C terminal, the position accuracy of the detection terminal is incorrect, and there is a problem that it will bring more incorrect results to the subsequent 1C inspection. An object of the present invention is to provide a detection device capable of achieving stable contact between a 1C terminal and a detection terminal even in a semiconductor device having a large 1C terminal height deviation such as a wafer state CSP in view of the problems existing in the background art described above. , Semiconductor device inspection device and inspection method. [Summary of the Invention] (4) (4) 1221199 In order to achieve the above-mentioned object, the present invention proposes a detection device having a control unit controlled so that a driving mechanism is driven so that a plurality of detection terminals contact the 1C terminal of the semiconductor device. The function is characterized in that a contact detection mechanism is provided to drive the detection terminal to contact the 1C terminal by the driving mechanism. When the detection terminal is close to the 1C terminal, the contact detection mechanism is used to detect any of the above. The contact between the detection terminal and the IC terminal; the control unit controls and drives the driving mechanism, and detects the contact time between the detection terminal and the 1C terminal from the contact detection mechanism, so that the detection terminal and the 1C terminal are in a direction approaching each other only Move the preset amount. In order to achieve the above object, the present invention provides a testing device for a semiconductor device, which is provided with a detecting device and a testing section. The testing device makes a plurality of detection terminals contact the 1C terminal of the semiconductor device. The 1C terminal performs an electrical inspection of the semiconductor device, and is characterized in that the detection device of the present invention is provided as the detection device. In order to achieve the above object, the present invention proposes a method for inspecting a semiconductor device, in which a plurality of detection terminals are brought into contact with the 1C terminal of the semiconductor device to perform the inspection, and is characterized by including the following steps: making the detection terminal close to the 1C terminal so that When the detection terminal contacts the 1C terminal, it is detected that any of the detection terminals is in contact with the 1C terminal; from the time of detecting the contact, the detection terminal and the 1C terminal are moved toward each other in the direction of approaching each other, and only a predetermined amount is set, Make -8- (5) (5) 1221199 so that the detection terminal is in contact with the 1C terminal. In the detection device, the semiconductor device inspection device, and the semiconductor device inspection method according to the present invention, when the detection terminal is brought close to the 1 c terminal so that the detection terminal contacts the 1C terminal, any one of the detection terminal and the 1C terminal is detected. The contact causes the detection terminal and the 1C terminal to move toward each other from the point in time when the contact is detected, and moves only a predetermined amount set in advance. Therefore, the contact accuracy between the detection terminal and the 1C terminal can be improved. Furthermore, since the contact time between the detection terminal and the 1C terminal is detected, the detection terminal and the 1C terminal are moved toward each other in the direction of approaching each other, and only a predetermined amount is set. Therefore, the detection terminal can be prevented from being excessively pressed against 1C. The terminal may cause damage to the 1C terminal. In this way, stable contact between the 1C terminal and the detection terminal can be achieved. [Embodiment] An embodiment of the present invention will be described below. In the detection device of the present invention, it is preferable that the detection terminal position measurement device and the 1C terminal position measurement device are provided. The detection terminal position measurement device measures the height position of the detection terminal before the start of the inspection, and the 1C terminal position measurement device. Sampling measurement of the height position of the 1C terminal before the start of the test; when the detection terminal is close to the 1C terminal by the drive of the driving mechanism, the control unit performs measurement based on the detection terminal position measurement device and the 1C terminal position measurement device. As a result, the driving mechanism is controlled to move at least -9-(6) (6) 1221199 at a low speed at least in a section where the 1C terminal and the detection terminal are located at a height position closest to the height position of the detection terminal. The detection terminal is close to the 1C terminal; the contact detection mechanism starts to detect the contact between the detection terminal and the 1C terminal when the low-speed operation of the driving mechanism starts. In the semiconductor device inspection method of the present invention, it is preferable that the height position of the detection terminal before the start of the measurement is measured, and the height position of the 1C terminal before the start of the measurement is sampled; when the detection terminal is close to the 1C terminal Based on the measured height position of the detection terminal and the height position of the 1C terminal, at least in a section where the 1C terminal and the detection terminal are located at a height position closest to the height position of the detection terminal, the detection is performed at a low speed. The terminal is close to the 1C terminal; when the low-speed operation is started, the detection of the contact between the detection terminal and the 1C terminal is started. At least in the section where the 1C terminal and the detection terminal are located at a height position closest to the height position of the detection terminal, the detection terminal is brought close to the 1C terminal at a low speed, and the following operations can be performed correctly: from detection to detection From the time of contact between the terminal and the 1C terminal, the detection terminal and the 1C terminal are moved toward each other by a predetermined amount only in a predetermined amount. In addition, since the operation from the proximity of the detection terminal to the 1C terminal to the low-speed operation section can be performed at a high speed, compared with the case where the operation of the proximity of the detection terminal and the 1C terminal is performed at a low speed, Can reduce inspection time. In the detection device of the present invention, it is preferable that the control unit connects the detection terminal to the 1C terminal before reaching a preset limit amount. (7) (7) 1221199 Nearly through the contact detection When the mechanism does not detect that the detection terminal is in contact with the 1C terminal, the approach stop of the detection terminal and the 1C terminal is stopped. In the inspection method of the semiconductor device of the present invention, it is preferable that the detection terminal is brought close to the 1C terminal and the detection terminal is not detected in contact with the IC terminal before the preset limit is reached. Stop approaching the detection terminal to the IC terminal. This can prevent the detection terminal from being excessively pressed against the semiconductor device and causing damage. _ In the detection device of the present invention, as the first pattern of the above-mentioned contact detection mechanism, the following can be enumerated, which include: a wiring section for making the semiconductor device a certain potential; a power supply section for supplying a current to the detection terminal Or a voltage; an electrical measuring unit for measuring a voltage or a current of the detection terminal; a contact judging unit detecting a contact between the detection terminal and the 1C terminal based on an output signal of the electrical measurement unit. As the first inspection method of the semiconductor device of the present invention, the following can be listed, for example: making the semiconductor device a certain potential; supplying a current or voltage to the detection terminal; monitoring a voltage change or a current change in the detection terminal, and detecting the · The contact between the detection terminal and the 1C terminal. Therefore, when the detection terminal and the 1C terminal are brought close to each other so that the contact between the detection terminal and the 1C terminal can be detected when the detection terminal is in contact with the 1C terminal. -11-(8) (8) 1221199 In the first form of the contact detection mechanism of the detection device of the present invention, it is preferable that the wiring section includes a stage on which the semiconductor device is arranged. In the first inspection method of the semiconductor device of the present invention, it is preferable to set the stage on which the semiconductor device is arranged to a constant potential, and the semi-conductor device to a constant potential. This makes it easy to set the semiconductor device to a constant potential. In the first * form of the contact detection mechanism of the detection device of the present invention, it is preferable that an electrical measurement section is provided at each detection terminal. _ In the first inspection method of the semiconductor device of the present invention, it is preferable that the voltage change or current change in the detection terminal is monitored for each detection terminal. Therefore, even if a defective 1C with a 1C terminal protruding high is included, the detection terminal can be prevented from being pressed too strongly against the semiconductor device to cause its damage. In the detection device of the present invention, as the second form of the contact detection mechanism, The examples include the following: Φ The contact detection mechanism is provided with a sensor terminal arranged near the detection terminal, and a short-circuit detection unit for detecting the electrical connection between the detection terminal and the sensor terminal; the sensor terminal is disposed at In such a position, when the detection terminal is not in contact with the 1C terminal, the sensor terminal is spaced from the detection terminal, and because the contact between the inspection terminal and the 1C terminal is the cause, the sensor terminal is in contact with the detection terminal. As the second inspection method of the semiconductor device of the present invention, it can be listed as follows: -12-(9) (9) 1221199 The following is listed, where: the sensor terminal is arranged at such a position... In the terminal contact state, the sensor terminal is spaced from the detection terminal, and because the detection terminal is in contact with the 1C terminal, the sensor terminal is in contact with the detection terminal; by detecting the detection terminal and the sensor, The electrical connection of the terminals detects the contact between the detection terminal and the 1C terminal. Thus, the detection terminal is brought close to the 1C terminal so that when the detection terminal is in contact with the 1C terminal, the contact between a certain detection terminal and the 1C terminal can be detected. Furthermore, even if the potential of the semiconductor device, the 1C terminal, or both is in an indefinite state, the contact between the detection terminal and the 1C terminal can be detected. In the second aspect of the contact detection mechanism of the detection device of the present invention, it is preferable that the above-mentioned contact detection mechanism is provided with a sensor terminal at each detection terminal. In the second inspection method of the semiconductor device of the present invention, it is preferable that the sensor terminal is arranged for each detection terminal, and the electrical connection between the detection terminal and the sensor terminal is detected for each detection terminal. Therefore, even if a defective 1C with a 1C terminal protruding high is included, the detection terminal can be prevented from being pressed excessively against the semiconductor device to cause damage, and an embodiment of the present invention will be described in more detail with reference to the drawings. FIG. 1 is a schematic configuration diagram showing an embodiment of an inspection device for a semiconductor device, and FIG. 2 is a block diagram showing the embodiment. The inspection device 1 is composed of a detection device 3 and a tester (inspection unit) 5. -13- 1221199 1C of the terminal C spoon I Ｍ is installed in the body's leading half 1C and touches the terminal end. It is necessary to use more than 10 units to set up the inspection (1 unit inspection 'probe gas inspection. In Figure 1 and Figure 2, it is used to supply the inspection signal set for the electrical inspection of 1c The illustration of the means for judging the inspection result is omitted. The detection device 3 is provided with a stage 9 for arranging, for example, wafers 7 forming a plurality of wafer-state CSPs before cutting (not shown in the second figure). The wafer 7 is attracted to the stage 9 by a vacuum suction mechanism (not shown). The portion of the stage 9 where the wafer 7 is arranged is connected to the ground potential (the wiring portion) 1 1 and the ground potential (constant). (Potential) connection. The wafer 7 is diced to form a wafer region 13 in a wafer state CSP, and IC terminals 15 are formed in each wafer region 13. In FIG. Six 1C terminals 15. A load is provided for moving the stage 9 in the vertical direction. Stage height driving unit 17. The stage height driving element 17 includes a driving mechanism 19 for moving the stage 9 and a control section 21 (see FIG. 2) for controlling the driving mechanism. 9 is arranged facing the wafer 7, and a probe card 23 is provided with six probe terminals 25. The probe terminal 25 is supported on the probe card 23 so that the top of the probe terminal 25 and the probe terminal 25 are arranged on the wafer. The six 1C terminals 15 in the area 13 correspond to the height position of the detection card 23. The pressure sensor 27 is arranged in the detection device 3 as a 1C terminal position measurement means for sampling and determining the height position of the 1C terminal 15 。A sensor coupler 29 (Charge Coupled Device (hereinafter abbreviated as "CCD")) is arranged near the detection card 23 -14-(11) (11) 1221199, as a means for measuring the position of the detection terminal, for For example, the height position of the top end of the detection terminal 25 is measured optically. The output signal of the pressure sensor 27 and the CCD sensor 29 are sent to the control unit 21 of the stage height driving element 17. The tester 5 is provided with Six applied current measurements The constant voltage section 31 is an electrical measurement section. Each detection terminal 25 is provided with an applied current measurement voltage section 31, and the detection terminal 25 and the applied current measurement voltage section 31 are electrically connected. Fig. 3 is A circuit diagram showing the detection terminal 25 and the applied current measurement voltage section 31. The applied current measurement voltage section 31 is composed of a switch 3 3, a constant current source 3 5 as a power supply section, and a voltmeter 37 as an electrical measurement section. The switching of the on / off of the switch 3 3 is controlled by the control unit 21. One terminal of the switch 3 3 is connected to the detection terminal 25 and the other terminal is connected to the constant current source 35. The voltmeter 37 is connected in parallel to the wiring between the switch 33 and the constant current source 35. For example, when the measured voltage is smaller than a predetermined voltage set in advance, the contact determination signal of the current measurement voltage unit 31 is an electric signal with a logic value of 0, and when the measured voltage is above a predetermined voltage, the contact determination signal is a logic value of 1. electric signal. The constant current source 35 is a constant current supplied for example-10 # A (microampere). The constant current source 35 may be provided for each of the applied current measurement voltage sections 31, or a plurality of applied current measurement voltage sections 31 may be used in common. In this embodiment, a P-type substrate component is used as the wafer 7 as an inspection target. As shown in FIG. 1, the wafer 7 is connected to the ground potential via the stage 9 and the ground wiring 11. Therefore, the wafer 7 has a cathode connected to the 1C terminal 15, -15- (12) (12) 1221199, and the anode is equivalent to a ρ η plane junction diode connected to the ground potential. Returning to FIG. 1 and FIG. 2, the description is continued. A contact judging unit 39 is provided in the inspection unit 5 for detecting the contact between any of the 1C terminal 15 and the detection terminal 25 based on the contact judging signal of the applied current measurement voltage unit 31. contact. As the contact judging section 39, for example, a six-input OR gate logic circuit can be used. The output signal of the contact judging unit 39 is sent to the control unit 21 of the stage height driving unit 17. In this embodiment, the first form of the contact detection mechanism of the present invention is composed of a switch 3 3, a constant current source 35, and an applied current measurement voltage section 3 of a voltmeter 37, a stage 9, a ground wiring 1, and the like. 1, and a contact judgment unit 39. Fig. 4 is a flowchart showing the operation at the time of electrical inspection in the embodiment. The operation during the electrical inspection of this embodiment will be described with reference to FIGS. 1-4. An explanation will be given of one embodiment of a first inspection method of a semiconductor device according to the present invention by describing the operation. With a wafer as a group, a series of actions are performed for each group to start the electrical inspection of the IC (group start). At the start of the inspection, the stage 9 is arranged at the initial height position, and the switch 33 is turned off. The height position and the horizontal position of the tip of the detection terminal 25 are measured by the CCD sensor 29, and the height position and the horizontal position information of the above-mentioned detection terminal 25 are sent to the control unit of the stage height driving unit 17 2 1 (step S 1). The control unit 21 and the driving mechanism 19 are driven to raise the stage 9 and the height position of the 1C terminal 15 is sampled and measured by the detection signal of the pressure sensor 27 (step S2). After that, the stage 9 is returned to the initial height position.
說明取樣測定1C端子15高度位置一例，預先藉由CCD (13) (13)1221199 感測器2 9 (圖示省略）進行晶圓7的水平方向的對位，將 I C端子1 5的水平方向位置記憶在探測裝置3。這裏所使用 的CCD感測器既可以藉由改變用於測定探測端子25高度位. 置及水平方向位置的CCD感測器29的朝向使用’也可以不 是CCD感測器29，而另外準備。 使得載物臺9朝水平方向移動，取樣測定的I C端子來 到緊接壓力感測器27的下面。使得載物臺9上昇，藉由壓 力感測器27測定取樣測定的1C端子1 5的高度位置。此後， 使得載物臺9下降。 反覆載物臺9的水平方向移動、上昇及下降，反復次 數爲取樣測定的1C端子1 5的數，取得必要的取樣資料。 回到第4圖繼續說明，藉由控制部2 1，根據在上述步 驟S2的取樣測定結果，推斷在晶圓7內具有最高高度位置 (與探測端子25的高度位置最接近的高度位置）的1C端子 1 5的高度位置，根據該推斷結果，以及探測端子2 5頂端的 高度位置資訊，設定上述推斷在具有與探測端子2 5的高度 位置最接近的高度位置的1C端子15與探測端子25接觸的高 度，作爲1C端子15與探測端子25的接觸檢測開始高度（步 驟S 3 )。控制部2 1控制驅動機構1 9的驅動，在接觸檢測開 始高度以上的高度位置區間，以低速動作使載物臺9上昇 〇 藉由控制部2 1使得驅動機構1 9被驅動，使得載物臺9 · 的高度位置仍保持初始値水平移動，將最初進行檢驗的晶 片區域13的1C端子15配置在與探測端子25對應的位置（步 -17- (14) (14)1221199 驟 S 4 ) 〇 對與探測端子2 5對應配置的晶片區域1 3，開始電氣檢 驗（晶片檢驗開始）。 藉由控制部2 1使得驅動機構1 9以高速動作驅動，使得 載物臺9從初始値高度位置上昇到接觸檢測開始高度（步 驟 S 5 ) 〇 藉由控制部2 1的控制，接通開關3 3，從恒流源3 5藉由 開關33向探測端子25施加例如—10 // Α的電流（步驟S6 ) 〇 藉由電壓計37測定各探測端子25的電壓（步驟S7 )。 當所測定電壓比預先設定的規定電壓小的場合，電壓計3 7 輸出邏輯値爲〇的電信號作爲接觸判定信號，在規定電壓 以上場合，輸出邏輯値爲1的電信號。 藉由接觸判斷部3 9，根據上述電壓計3 7的輸出邏輯値 ，判斷是否有探測端子2 5的電壓爲規定電壓以上，即探測 端子2 5是否與I C端子1 5接觸。當來自電壓計3 7的接觸判定 信號全部邏輯値爲0 (比規定電壓小）場合，接觸判斷 部3 9輸出邏輯値爲〇的電信號，即判斷哪個探測端子2 5都 沒有與I C端子1 5接觸；當來自電壓計3 7的某接觸判定信號 邏輯値爲1 (規定電壓以上）場合，接觸判斷部3 9輸出 邏輯値爲1的電信號，即判斷某個探測端子25與1C端子1 5 接觸（步驟S 8 )。 當接觸判斷部3 9輸出邏輯値爲〇的電信號，即哪個電 壓計3 7的檢測電壓都比規定電壓小場合（步驟S 8的“否” (15) (15)1221199 )，控制部2 1判斷載物臺9的高度位置（載物臺高度）是 否是限制値（步驟S 9 )。控制部2 1對載物臺9的上昇設定 限制値，以防止探測端子2 5過強壓抵晶圓7而引起晶圓7及 探測端子2 5的損傷。 在步驟S 9，判斷爲載物臺9高度沒有達到限制値場合 ，控制部2 1對驅動機構1 9的驅動進行控制’使得載物臺9 僅僅上昇例如10 μπι (步驟S10)。這時’藉由電壓計37繼 續測定各探測端子25的電壓（步驟S7) ’判斷1C端子15與 探測端子25的接觸（步驟S8 )。 在步驟S 9，判斷爲載物臺9高度達到限制値場合，控 制部2 1對檢驗中的晶片區域1 3的晶片判斷爲不合格（步驟 S 1 1 )，使得載物臺9下降到初始値高度位置。這樣，能防 止探測端子25過強壓抵晶圓7爲起因而引起的晶圓7及探測 端子2 5的損傷。對於判斷爲不合格的晶片區域1 3，結束晶 片檢驗（晶片檢驗結束）。 在步驟S 8，當接觸判斷部3 9輸出邏輯値爲1的電信號 ，即某個電壓計3 7的檢測電壓爲規定電壓以上場合（步驟 S8的“是”），控制部21對驅動機構19的驅動進行控制， 使得載物臺9僅僅上昇預先設定的一定量例如40 // m (步 驟 S 1 2 ) 〇 某個電壓計3 7的檢測電壓爲規定電壓以上是在某個探 測端子25與1C端子15接觸時，藉由從該時刻起使得載物臺 9僅僅上昇預先設定的一定量，能提高全部探測端子25與 1C端子15接觸的正確性。能防止探測端子25過強壓抵晶圓 -19- (16) (16)1221199 7而引起探測端子25破損等。這樣，能實現1C端子15與探 測端子2 5的穩定接觸。 使得載物臺9僅僅上昇預先設定的一定量，使得全部 探測端子25與1C端子15接觸後，進入通常的檢驗程序，進 行檢驗中的I C區域1 3的電氣檢驗，判斷與被檢驗I C區域1 3 對應的被檢驗1C晶片是否合格（步驟S13)。 進行所設定的電氣檢驗後，使得載物臺9下降到初始 値高度位置，對於檢驗中的晶片區域1 3，結束晶片檢驗（ 晶片檢驗結束）。 晶片檢驗結束後，判斷是否晶圓7內的全部晶片區域 1 3檢驗結束（步驟S 1 4 )。存在未檢驗晶片區域1 3場合（ 步驟S 1 4的“否”），藉由控制部2 1對驅動機構1 9的驅動 進行控制，使得載物臺9保持初始値的高度位置水平移動 ，將其次進行檢驗的晶片區域1 3的1C端子配置在與探測端 子2 5對應的位置（步驟S 1 5 )，對該晶片區域1 3，開始電 氣檢驗（晶片檢驗開始）。在步驟S 14，若判斷爲全部晶 片區域1 3電氣檢驗結束場合（步驟S 1 4的“是”），對配 置在載物臺9的晶圓7，結束電氣檢驗（組結束）。 根據本實施例，即使晶圓7上IC端子高度偏差大場合 ，檢測1C端子1 5與探測端子25的接觸，從該檢測時刻使得 載物臺9僅僅上昇預先設定的所定量，對各晶片區域丨3實 施上述動作，因此，在全部晶片區域1 3，能實現I C端子1 5 與探測端子2 5的穩定接觸。 在第1圖所示實施例中，使得1C端子15與探測端子25 -20- (17) (17)1221199 接觸以便進行電氣檢驗時，在探測端子2 5上施加所設定的 恒流’檢測因1C端子1 5與探測端子25接觸爲起因的探測端 子2 5中的電壓變化，但本發明並不局限與此，也可以在探 測端子2 5上施加所設定的恒壓，藉由檢測因〗C端子〗5與探 測端子2 5接觸爲起因的探測端子2 5中的電流變化，檢測I C 端子1 5與探測端子2 5的接觸。下面說明該實施例。 第5圖是表示半導體裝置的檢驗裝置的另一實施例的 槪略構成圖，第6圖是表示該實施例的方塊圖。與第1圖和 第2圖相同部分標以相同符號，相應部分說明省略。 檢驗裝置4 1由探測裝置4 3及檢驗器4 5構成，探測裝置 43用於使得多個探測端子接觸半導體裝置的1C端子，檢驗 器45設有用於藉由探測端子及1C端子進行1C的電氣檢驗的 檢驗部。在第5圖和第6圖中，用於供給爲進行1C的電氣檢 驗所設定的檢驗信號等、判定檢驗結果的手段圖示省略。 在探測裝置43設有載物臺9、接地配線1 1、探測插件 23、壓力感測器27、CCD感測器29、及載物臺高度驅動元 件47，上述載物臺9用於配置形成有晶片區域13和1C端子 1 5的晶圓7。載物臺高度驅動元件47包括驅動機構〗9，以 及用於控制驅動機構1 9的控制部49 (參照第6圖）。壓力 感測器27的輸出信號以及CCD感測器29的輸出信號送向載 物臺高度驅動單元47的控制部49。 在檢驗器4 5設有六個施加電壓測定電流部5 1作爲電氣 測定部。在每個探測端子2 5設有施加電壓測定電流部5 1， 探測端子2 5與施加電壓測定電流部5 1是被電氣式地連接。 -21 - (18) (18)1221199 第7圖是表示晶圓7，探測端子2 5及施加電壓測定電流 部5 1的電路圖。 施加電壓測定電流部5 1由開關5 3、作爲電源部的恒壓 源55、以及作爲電氣測定部的電流計57所構成。開關53的 接通/斷開的切換由控制部49控制。開關53的一端子與探 測端子2 5連接，另一端子與恒壓源5 5連接。電流計5 7串聯 連接在開關5 3與恒壓源5 5之間的配線上。在例如所測定電 流比預先設定的規定電流小的場合，施加電壓測定電流 部5 1的接觸判定信號是邏輯値爲〇的電信號，在規定電流 以上場合，接觸判定信號是邏輯値爲1的電信號。恒壓源 5 5供給例如- 1 V (伏特數）的恒壓。恒壓源5 5既可以設 置在每個施加電壓測定電流部5 1，也可以幾個施加電壓測 定電流部5 1共用。 在本實施例中，由P型基板構成件作爲晶圓7成爲檢驗 對象。如第5圖所示，晶圓7藉由載物臺9及接地配線11與 接地電位相連接。因此，晶圓7和陰極與1C端子15相連接 、陽極與接地電位相連接的pn面結型二極管等價。 回到第5圖和第6圖繼續說明，在檢驗部45設有接觸判 斷部5 9，用於根據施加電壓測定電流部5 1的接觸判斷信號 ，檢測任一個1C端子1 5與探測端子25的接觸。可以使用例 如六輸入“或”閘邏輯電路作爲接觸判斷部5 9。接觸判斷 部5 9的輸出信號送向載物臺高度驅動元件47的控制部49。 在該實施例中，本發明的接觸檢測機構的第一樣式由 開關5 3、設有恒壓源5 5及電流計5 7的施加電壓測定電流部 -22- (19) (19)1221199 5 1、載物臺9、接地配線1 1、以及接觸判斷部5 9所構成。 第8圖是表示該實施例的電氣檢驗時動作的流程圖。 參照第5 - 8圖說明本實施例的電氣檢驗時動作。藉由對該 動作的說明，說明本發明的半導體裝置的第一檢驗方法的 另一實施例。 將一晶圓作爲一組，對每一組實行一連串動作，開始 IC的電氣檢驗（組開始）。在檢驗開始時，載物臺9配置 在初始値高度位置，開關53斷開。藉由CCD感測器29測定 探測端子2 5頂端的高度位置及水平方向的位置，將上述探 測端子2 5頂端的高度位置及水平方向的位置資訊送向載物 臺高度驅動元件47的控制部49 (步驟S31 )。 藉由控制部49，驅動機構19被驅動，使得載物臺9上 昇，藉由壓力感測器27的檢測信號，取樣測定1C端子15的 高度位置（步驟S 3 2 )。此後，使得載物臺9回到初始値 高度位置。 藉由控制部49，根據在上述步驟S32的取樣測定結果 ，推斷在晶圓7內具有最高高度位置（與探測端子25的高 度位置最接近的高度位置）的1C端子15的高度位置，根據 該推斷結果，以及探測端子25頂端的高度位置資訊，設定 上述推斷在具有與探測端子2 5的高度位置最接近的高度位 置的1C端子15與探測端子25接觸的高度，作爲1C端子15與 探測端子2 5的接觸檢測開始高度（步驟S 3 3 )。控制部4 9 控制驅動機構1 9的驅動，在接觸檢測開始高度以上的高度 位置區間，以低速動作使載物臺9上昇。 23- (20) (20)1221199 藉由控制部49使得驅動機構19被驅動，使得載物臺9 的高度位置保持初始値水平移動，將最初進行檢驗的晶片 區域13的1C端子15配置在與探測端子25對應的位置（步驟 S34 ) 〇 對與探測端子2 5對應配置的晶片區域！ 3，開始電氣檢 驗（晶片檢驗開始）。 藉由控制部49使得驅動機構〗9以高速動作驅動，使得 載物臺9從初始値高度位置上昇到接觸檢測開始高度（步 驟S 3 5卜 藉由控制部49的控制，接通開關53，從恒壓源55藉由 開關53向探測端子25施加例如—IV的電壓（步驟S36 )。 藉由電流計5 7測定各探測端子2 5的電流（步驟S 3 7 ) 。當所測定電流比預先設定的規定電流小的場合，電流計 5 7輸出邏輯値爲0的電信號.作爲接觸判定信號，在規定電 流以上場合，輸出邏輯値爲1的電信號。 藉由接觸判斷部5 9，根據上述電流計5 7的輸出邏輯値 ，判斷是否有探測端子2 5的電流爲規定電流以上’即探測 端子25是否與1C端子15接觸。當來自電流計5?的接觸判定 信號全部邏輯値爲〇 (比規定電流小）場合’接觸判斷 部5 9輸出邏輯値爲0的電信號’即判斷哪個探測端子2 5都 沒有與I C端子1 5接觸；當來自電流計5 7的某接觸判定信號 邏輯値爲1 (規定電壓以上）場合’接觸判斷部5 9輸出 邏輯値爲1的電信號，即判斷某個探測端子25與1<：端子15 接觸（步驟S 3 8 )。 -24 - (21) (21)1221199 當接觸判斷部59輸出邏輯値爲0的電信號，即哪個電 流計5 7的檢測電流都比規定電流小場合（步驟s3 8的“否 ”’ 控制部49判斷載物臺9的高度位置（載物臺高度 )是否是限制値（步驟S 3 9 )。控制部4 9對載物臺9的上昇 設定限制値，以防止探測端子25過強壓抵晶圓7而引起晶 圓7及探測端子2 5的損傷。 在步驟S 3 9，判斷爲載物臺9高度沒有達到限制値場合 ，控制部49對驅動機構1 9的驅動進行控制，使得載物臺9 僅僅上昇例如ΙΟμιη (步驟S40)。這時，藉由電流計57繼 續測定各探測端子25的電壓（步驟S37 )，判斷1C端子15 與探測端子25的接觸（步驟S38)。 在步驟S39，判斷爲載物臺9高度達到限制値場合，控 制部49對檢驗中的晶片區域1 3的晶片判斷爲不合格（步驟 S4 1 )，使得載物臺9下降到初始値高度位置。這樣’能防 止探測端子2 5過強壓抵晶圓7爲起因而引起的晶圓7及探測 端子2 5的損傷。對於判斷爲不合格的晶片區域1 3，結束晶 片檢驗（晶片檢驗結束）° 在步驟S 3 8，當接觸判斷部5 9輸出邏輯値爲1的電信號 ，即某個電流計5 7的檢測電流爲規定電流以上場合（步驟 S38的“是”），控制部49對驅動機構19的驅動進行控制 ，使得載物臺9僅僅上昇預先設定的一定量例如4〇μΠ1 (步 驟 S42)。 某個電流計5 7的檢測電流爲規定電流以上是在某個探 測端子2 5與IC端子1 5接觸時，藉由從該時刻起使得載物臺 -25- (22) (22)1221199 9僅僅上昇預先設定的一定量，能提高全部探測端子2 5與 1C端子15接觸的正確性。能防止探測端子25過強壓抵晶圓 7而引起探測端子25破損等。這樣，能實現1C端子15與探 測端子2 5的穩定接觸。 ‘ 使得載物臺9僅僅上昇預先設定的一定量，使得全部 探測端子25與1C端子15接觸後，進入通常的檢驗程序，進. 行檢驗中的1C區域13的電氣檢驗，判斷與被檢驗1C區域13 對應的被檢驗1C晶片是否合格（步驟S43 )。 參 進行所設定的電氣檢驗後，使得載物臺9下降到初始 値高度位置，對於檢驗中的晶片區域1 3，結束晶片檢驗（ 晶片檢驗結束）。 晶片檢驗結束後，判斷是否晶圓7內的全部晶片區域 1 3檢驗結束（步驟S44 )。存在未檢驗晶片區域1 3場合（ 步驟S44的“否”），藉由控制部49對驅動機構19的驅動 進行控制，使得載物臺9保持初始値的高度位置水平移動 ，將其次進行檢驗的晶片區域1 3的1C端子配置在與探測端 ® 子25對應的位置（步驟S45 )，對該晶片區域13，開始電 氣檢驗（晶片檢驗開始）。在步驟S44，若判斷爲全部晶 片區域1 3電氣檢驗結束場合（步驟S44的“是”），對配 置在載物臺9的晶圓7 ’結束電氣檢驗（組結束）。 . 根據本實施例，即使晶圓7上1C端子高度偏差大場合 ’檢測1C端子15與探測端子25的接觸，從該檢測時刻使得 載物臺9僅僅上昇預先設定的所定量，對各晶片區域〗3實 施上述動作，因此，在全部晶片區域1 3，能實現1C端子1 5 -26- (23) (23)1221199 與探測端子2 5的穩定接觸。 第9圖是表示半導體裝置的檢驗裝置的又一實施例的 槪略構成圖，第1〇圖爲該實施例的方塊圖。與第I·4圖相 同部分標以相同符號，相應部分說明省略。 檢驗裝置6 1由探測裝置6 3及檢驗器6 5所構成，探測裝 置63用於使得多個探測端子接觸半導體裝置的1C端子，檢 驗器65設有用於藉由探測端子及1C端子進行1C的電氣檢驗 的檢驗部。在第9圖和第1 〇圖中’用於供給爲進行1C的電 氣檢驗所設定的檢驗信號等、判定檢驗結果的手段圖示省 略。 在探測裝置6 3設有載物臺9、接地配線1 1、探測卡6 9 、壓力感測器27、CCD感測器29、及載物臺高度驅動單元 65，上述載物臺9用於配置形成有晶片區域13和1C端子15 的晶圓7。載物臺高度驅動單元6 5包括驅動機構1 9 ’以及 用於控制驅動機構1 9的控制部67 (參照第1 0圖）°壓力感 測器27的輸出信號以及CCD感測器29的輸出信號送向載物 臺高度驅動單元6 5的控制部6 7。 在檢驗器6 5設有六個短路檢測部7 3作爲電氣測定部。 相對各探測端子25及感測器端子7 1 設有短路檢測部73 ’ 探測端子2 5及感測器端子7 1與短路檢測部73是被電氣式地 連接。 第1 1圖是表不該實施例的探測V而子2 5 ’ 感測益細子 7 1及短路檢測部7 3的構成圖。 感測器端子7 1配置在探測端子25的上方（與載物臺9 -27- (24) (24)1221199 相反側的位置），配置爲與探測端子2 5之間具有間隔（參 照第1 1 A圖）。載物臺9上昇，探測端子25與1C端子15 ( 圖示省略）接觸，載物臺9再上昇，壓抵探測端子2 5， 探測端子2 5與感測器端子7 1互相接觸（參照第1 1 B圖）。 短路檢測部73用於電氣檢測探測端子25與感測器端子 7 1的接觸，能在內部切換檢測動作的接通/斷開。當探測 端子2 5與感測器端子7 1沒有接觸時，短路檢測部73的接 觸判定信號是邏輯値爲〇的電信號，當探測端子2 5與感測 器端子7 1接觸時，短路檢測部73的接觸判定信號是邏輯 値爲1的電信號。 回到第9圖和第1 0圖繼續說明，在檢驗部6 5設有接觸 判斷部7 5，用於根據短路檢測部73的接觸判斷信號，檢測 任一個I C端子1 5與探測端子2 5的接觸。可以使用例如六輸 入“或”閘邏輯電路作爲接觸判斷部7 5。接觸判斷部7 5的 輸出信號送向載物臺高度驅動單元65的控制部67。 在該實施例中，本發明的接觸檢測機構的第二樣式由 感測器端子71、短路檢測部73、以及接觸判斷部75所構成 〇 第1 2圖是表示該實施例的電氣檢驗時動作的流程圖。 參照第9-1 2圖說明本實施例的電氣檢驗時動作。藉由對該 動作的說明’說明本發明的半導體裝置的第二檢驗方法的 〜實施例。 將一晶圓作爲一組，對每一組實行一連串動作，開始 IC的電氣檢驗（組開始）。在檢驗開始時，載物臺9配置 (25) (25)1221199 在初始値高度位置，短路檢測部7 3是被斷開。 藉由CCD感測器29測定探測端子25頂端的高度位置及 水平方向的位置’將上述探測端子2 5頂端的高度位置及水 平方向的位置資訊送向載物臺高度驅動單元6 5的控制部6 7 (步驟S 5 1 )。 藉由控制部6 7 ’驅動機構1 9被驅動，使得載物臺9上 昇，藉由壓力感測器2 7的檢測信號，取樣測定I c端子1 5的 高度位置（步驟S52 )。此後，使得載物臺9回到初始値 高度位置。 藉由控制部6 7，根據在上述步驟S 5 2的取樣測定結果 ，推斷在晶圓7內具有最局商度位置（與探測端子2 5的高 度位置最接近的高度位置）的1C端子15的高度位置，根據 該推斷結果，以及探測端子25頂端的高度位置資訊，設定 上述推斷在具有與探測端子25的高度位置最接近的高度位 置的1C端子15與探測端子25接觸的高度，作爲1C端子15與 探測端子25的接觸檢測開始高度（步驟S53 )。控制部67 控制驅動機構1 9的驅動，在接觸檢測開始高度以上的高度 位置區間，以低速動作使載物臺9上昇。 藉由控制部67使得驅動機構19被驅動，使得載物臺9 的高度位置保持初始値水平移動，將最初進行檢驗的晶片 區域13的1C端子15配置在與探測端子25對應的位置（步驟 S54 )。 對與探測端子2 5對應配置的晶片區域1 3，開始電氣檢 驗（晶片檢驗開始）。 -29- (26) (26)1221199 藉由控制部67使得驅動機構1 9以高速動作驅動，使得 載物臺9從初始値高度位置上昇到接觸檢測開始高度（步 驟 S 5 5 )。 藉由控制部67的控制，接通短路檢測部73，檢測探測 端子2 5與感測器端子7 1的接觸（短路）（步驟S 5 6 )。探 測端子25與感測器端子71接觸場合，短路檢測部73輸出 邏輯値爲1的接觸判定信號，探測端子2 5與感測器端子7 1 不接觸場合，短路檢測部73輸出邏輯値爲〇的接觸判定 信號。 藉由接觸判斷部7 5，根據上述短路檢測部7 3的接觸判 定信號，判斷是否有探測端子25與1C端子15接觸。當來自 短路檢測部73的接觸判定信號全部邏輯値爲〇場合，接 觸判斷部75輸出邏輯値爲0的電信號，即判斷哪個探測端 子2 5都沒有與1C端子15接觸，·當來自短路檢測部73的某接 觸判定信號邏輯値爲1場合，接觸判斷部7 5輸出邏輯値 爲1的電信號，即判斷某個探測端子25與1C端子15接觸（ 步驟S 5 7 )。 當接觸判斷部75輸出邏輯値爲0場合（步驟S57的“否 ”）， 控制部67判斷載物臺9的載物臺高度是否是限制 値（步驟S 5 8 )。控制部6 7對載物臺9的上昇設定限制値， 以防止探測端子25過強壓抵晶圓7而引起晶圓7及探測端子 2 5的損傷。 在步驟S58，判斷爲載物臺9高度沒有達到限制値場合 ，控制部67對驅動機構19的驅動進行控制，使得載物臺9 -30 - (27) (27)1221199 僅僅上昇例如1 〇 # m (步驟S 59 )。這時，藉由短路檢測 部7 3繼續監視各探測端子2 5與感測器端子7 1的接觸（步驟 S 5 6 )，判斷探測端子2 5與感測器端子7 1的接觸（步驟S 5 7 )。 在步驟S 5 8，判斷爲載物臺9高度達到限制値場合，控 制部67對檢驗中的晶片區域1 3的晶片判斷爲不合格（步驟 S60 )，使得載物臺9下降到初始値高度位置。這樣，能防 止探測端子25過強壓抵晶圓7爲起因而引起的晶圓7及探測 端子2 5的損傷。對於判斷爲不合格的晶片區域1 3，結束晶 片檢驗（晶片檢驗結束）。 在步驟S57，當接觸判斷部75輸出邏輯値爲1場合（步 驟S57的“是”），控制部67對驅動機構19的驅動進行控 制，使得載物臺9僅僅上昇預先設定的一定量例如40 μπι ( 步驟S 6 1 )。 接觸判斷部75的輸出成爲邏輯値1是因爲某個探測端 子25與1C端子15接觸爲起因而導致探測端子25與感測器端 子7 1接觸時，藉由從該時刻起使得載物臺9僅僅上昇預先 設定的一定量，能提高全部探測端子2 5與1C端子1 5接觸的 正確性。進而，能防止探測端子25過強壓抵1C端子15而引 起1C端子15破損等。這樣，能實現1C端子15與探測端子25 的穩定接觸。 使得載物臺9僅僅上昇預先設定的一定量，使得全部 探測端子25與1C端子15接觸後，進入通常的檢驗程序’進 行檢驗中的1C區域13的電氣檢驗，判斷與被檢驗1C區域13 -31 - (28) (28)1221199 對應的被檢驗1C晶片是否合格（步驟S62 )。 進行所設定的電氣檢驗後，使得載物臺9下降到初始 値高度位置，對於檢驗中的晶片區域1 3，結束晶片檢驗（ 晶片檢驗結束）。 晶片檢驗結束後，判斷是否晶圓7內的全部晶片區域 I3檢驗結束（步驟S63 )。存在未檢驗晶片區域13場合（ 步驟S63的“否”），藉由控制部67對驅動機構19的驅動 進行控制，使得載物臺9保持初始値的高度位置水平移動 ，將其次進行檢驗的晶片區域1 3的1C端子配置在與探測端 子25對應的位置（步驟S64 )，對該晶片區域13，開始電 氣檢驗（晶片檢驗開始）。在步驟S63，若判斷爲全部晶 片區域1 3電氣檢驗結束場合（步驟S63的“是”），對配 置在載物臺9的晶圓7，結束電氣檢驗（組結束）。 根據本實施例，即使晶圓7上1C端子高度偏差大場合 ，檢測1C端子1 5與探測端子25的接觸，從該檢測時刻使得 載物臺9僅僅上昇預先設定的所定量，對各晶片區域丨3實 施上述動作，因此，在全部晶片區域1 3，能實現IC端子1 5 與探測端子25的穩定接觸。 在上述實施例中，藉由控制部2 1，4 9，推斷位於與探 測端子2 5的高度位置最接近的高度位置的IC端子丨5的高度 位置，將該位於與探測端子25最接近高度位置的IC端子15 與探測端子2 5接觸的高度，作爲IC端子1 5與探測端子2 5的 接觸檢測開始高度，在晶片檢驗前進行設定，在對各區域 1 3進行電氣檢驗時，使得載物臺9從初始値高度位置高速 (29) (29)1221199 動作上昇到上述接觸檢測開始高度，在接觸檢測開始高度 以後，每次1 Ο μ m地以低速動作使載物臺9上昇，因此，與 整個區間都以低速動作使載物臺9上昇場合相比，能縮短 檢驗時間。 使得載物臺9以低速動作上昇的區間，並不限定爲推 斷爲與探測端子25最接近的高度位置的1C端子15與探測端 子2 5接觸的高度位置以上的區間，也可以是至少包含與探 測端子25最接近的高度位置的1C端子15與探測端子25接觸 的區間。 在參照第1-4圖所說明的實施例以及參照第5-8圖所說 明的實施例中，晶圓7設爲接地電位，但本發明並不局限 於此，也可以將晶圓7的電位設爲一定電平。 在參照第9-12圖所說明的實施例中，載物臺9設爲接 地電位，晶圓7設爲接地電位，但在該實施例中，也可以 不將載物臺9設爲接地電平，使其成爲不定狀態。 在上述檢驗裝置實施例中，固定探測端子2 5，僅使載 物臺9移動，但本發明並不局限於此，也可以固定載物臺9 ，而使探測端子25移動，或者也可以構成爲使得探測端子 25和載物臺9雙方都移動。 在上述檢驗裝置實施例中，構成接觸檢測機構的施加 電流測定電壓部3 1，施加電壓測定電流部5 1，短路檢測部 73，以及接觸判斷部39，59，75設置在檢驗器5，45，65 中，但本發明並不局限於此，可以將其中一部分包含在探 測裝置3，43，63中，或者也可以使得接觸檢測機構全部 -33- (30) (30)1221199 包含在探測裝置3，4 3，6 3中。 在上述檢驗裝置實施例中，設有CCD感測器29作爲探 測端子位置測定手段，用於測定檢驗開始前的探測端子2 5 頂端的高度位置及水平方向位置，但作爲探測端子位置測 - 定手段並不局限於CCD，也可以是能測定檢驗開始前的探· 測端子2 5頂端的高度位置及水平方向位置的其他手段。 在上述檢驗裝置實施例中，設有壓力感測器2 7作爲IC 端子位置測定手段，用於取樣測定檢驗開始前的1C端子i 5 · 的高度位置，但作爲1C端子位置測定手段並不局限於壓力 感測器，也可以是能取樣測定檢驗開始前的1C端子的高度 位置的其他手段。 上述參照附圖說明了本發明實施例，但本發明並不 局限於此，在本發明技術思想範圍內可以作種種變更，其 皆屬於本發明的保護範圍。 〔發明之效果〕 · 在申請專利範圍第1項所述之探測裝置中，設有接觸 檢測機構，藉由上述驅動機構的驅動，以使上述探測端子 接觸上述1C端子，當上述探測端子與上述1C端子接近時， 接觸檢測機構用於檢測上述任一個探測端子與上述1C端子 - 的接觸；上述控制部控制驅動上述驅動機構，從上述接觸 檢測機構檢測到上述探測端子與上述1C端子接觸時刻，使 得上述探測端子與上述1C端子朝著相互接近的方向僅移動 預先設定的所定量。 -34- (31) (31)1221199 在申請專利範圍第9項所述之半導體裝置的檢驗裝置 中，設有探測裝置及檢驗部，設有上述本發明之探測裝置 作爲上述探測裝置。 在申請專利範圍第1 0項所述之半導體裝置的檢驗方法 中，其特徵爲包含以下工序：使得上述探測端子與上述1C 端子接近以使上述探測端子接觸於上述1C端子時，檢測任 一個上述探測端子與上述1C端子接觸；從檢測到上述接觸 時刻，使得上述探測端子與上述1C端子朝相互接近方向移 動，僅移動預先設定的所定量，使得上述探測端子與上述 1C端子接觸。因此，能提高探測端子與1C端子接觸的正確 性。再者，由於從檢測到上述探測端子與上述1C端子接觸 時刻，使得上述探測端子與上述1C端子朝著相互接近方向 移動，僅移動預先設定的所定量，因此，能防止探測端子 過強壓抵1C端子而導致1C端子破損等。這樣，能實現1C端 子與探測端子的穩定接觸。 在申請專利範圍第2項所述之探測裝置中，設有探測 端子位置測定裝置及1C端子位置測定裝置，上述探測端子 位置測定裝置測定檢驗開始前的上述探測端子的高度位置 ’上述1C端子位置測定裝置測定檢驗開始前的上述1C端子 的高度位置；當藉由上述驅動機構的驅動，上述探測端子 與上述1C端子接近時，上述控制部根據上述探測端子位置 測定裝置及1C端子位置測定裝置的測定結果，控制上述驅 動機構，至少在位於與探測端子的高度位置最接近的高度 位置的上述1C端子與上述探測端子接觸的區間，以低速動 -35- (32) (32)1221199 作使上述探測端子與上述1C端子接近；上述接觸檢測機構 在上述驅動機構低速動作開始時，開始檢測上述探測端子 與上述IC端子的接觸。 · 在申請專利範圍第11項所述之半導體裝置的檢驗方法 ’ 中，測定檢驗開始前的上述探測端子的高度位置，取樣 測定檢驗開始前的上述1C端子的高度位置；當上述探測端 子與上述1C端子接近時，根據上述測定的探測端子的高度 位置及上述1C端子的高度位置，至少在位於與探測端子的 _ 高度位置最接近的高度位置的上述1C端子與上述探測端子 接觸的區間，以低速動作使上述探測端子與上述1C端子接 近；在上述低速動作開始時，開始檢測上述探測端子與上 述1C端子的接觸。因此，能正確進行以下動作：從檢測到. 探測端子與1C端子的接觸時刻起，使得上述探測端子與1C 端子朝著相互接近方向僅移動預先設定的所定量。再者， 與以低速動作進行使探測端子與1C端子接近的動作全區間 場合相比，能縮短檢驗時間。 Φ 在申請專利範圍第3項所述之探測裝置中，在達到預 先設定的限制量前，上述控制部使得上述探測端子與上述 IC端子接近，藉由上述接觸檢測機構沒有檢測到上述探測 端子與上述1C端子接觸場合，停止上述探測端子與上述1C - 端子的接近。 在申請專利範圍第1 2項所述之半導體裝置的檢驗方法 中，在達到預先設定的限制量前，使得上述探測端子與 上述1C端子接近，沒有檢測到上述探測端子與上述1C端子 -36- • 4. (33) (33)1221199 接觸場合’停止上述探測端子與IC端子的接近。因此，能 防止探測_子過強壓抵半導體裝置而導致其損傷。 在申請專利範圍第4項所述之探測裝置中，作爲上述 接觸檢測機構的第一樣式，其包含：配線部，用於使半導 體裝置爲一定電位；電源部，用於向上述探測端子供給電 流或電壓；電氣測定部，用於測定上述探測端子的電壓或 電流；接觸判斷部，根據上述電氣測定部的輸出信號，檢 測上述探測端子與上述I C端子的接觸。 0 在申請專利範圍第i3項所述之半導體裝置的第一檢驗 方法中，其中： 使半導體裝置爲一定電位；向上述探測端子供給電流 或電壓；監視上述探測端子中的電壓變化或電流變化，檢 測上述探測端子與上述IC端子的接觸。 因此，使上述探測端子與上述1C端子接近以便使得探 測端子與1C端子接觸時，能檢測任一個探測端子與1C端子 的接觸。 0 在申請專利範圍第5項所述之探測裝置之接觸檢測機 構的第一樣式中，上述配線部包含配置上述半導體裝置的 載物臺。 在申請專利範圍第i 4項所述之半導體裝置的第一檢驗 - 方法中，藉由使得配置半導體裝置的載物臺爲一定電位， 使半導體裝置成爲一定電位。因此，很容易使半導體裝置 爲一定電位。 在申請專利範圍第6項所述之探測裝置之接觸檢測機 -37- (34) (34)1221199 構的第一樣式中，在每個探測端子設有電氣測定部。 在申請專利範圍第1 5項所述之半導體裝置的第一檢驗 方法中，對每個探測端子監視上述探測端子中的電壓變 化或電流變化。因此’即使包含某個1C端子高度突出那樣 的不良品1C場合，也能防止探測端子過強壓抵半導體裝置 而導致其損傷。 在申請專利範圍第7項所述之探測裝置中，作爲上述 接觸檢測機構的第二樣式’其包含：上述接觸檢測機構設 有配置在上述探測端子附近的感測器端子，以及用於檢測 探測端子與感測器端子電氣式地連接的短路檢測部；感測 器端子配置在這樣的位置：在探測端子不與1C端子接觸狀 態下，該感測器端子與探測端子有間隔，且因探測端子與 1C端子接觸爲起因，該感測器端子與探測端子接觸。 在申請專利範圍第1 6項所述之半導體裝置的第二檢驗 方法中，其中： 將上述感測器端子配置在這樣的位置：在上述探測端 子不與上述1C端子接觸狀態下，該感測器端子與探測端子 有間隔，且因探測端子與IC端子接觸爲起因，該感測器端 子與探測端子接觸；藉由檢測上述探測端子與上述感測器 端子的電氣式地連接，檢測探測端子與1C端子的接觸。因 此，使得上述探測端子與上述1C端子接近以便使得探測端 子與1C端子接觸時，能檢測某個探測端子與IC端子的接觸 。再者，即使半導體裝置或1C端子或雙方的電位處於不定 狀態，也能檢測上述探測端子與上述1C端子的接觸。 -38- (35) (35)1221199 在申請專利範圍第8項所述之探測裝置之接觸檢測機 構的第二樣式中，上述接觸檢測機構在每個探測端子設有 上述感測器端子。 在申請專利範圍第1 7項所述之半導體裝置的第二檢驗 · 方法中，對每個探測端子配置上述感測器端子，對每個 探測端子檢測上述探測端子與上述感測器端子的電氣式地 連接。因此，即使包含某個1C端子高度突出那樣的不良品 1C場合，也能防止探測端子過強壓抵半導體裝置而導致其 · 損傷。 【圖式簡單說明】 第1圖是表不半導體裝置的檢驗裝置的一實施例的槪 略構成圖。 第2圖是表示該實施例的方塊圖。 第3圖是表示該實施例的晶圓、探測端子及施加電流 測定電壓部的電路圖。 φ 第4圖是表示該實施例的電氣檢驗時動作的流程圖。 第5圖是表示半導體裝置的檢驗裝置的另一實施例的 槪略構成圖。 第6圖是表示該實施例的方塊圖。 . 第7圖是表示該實施例的晶圓、探測端子及施加電壓 測定電流部的電路圖。 ' 第8圖是表示該實施例的電氣檢驗時動作的流程圖。 第9圖是表示半導體裝置的檢驗裝置的又一實施例的 -39 - (36) (36)1221199 槪略構成圖。 第10圖是表示該實施例的方塊圖。 第1 1圖是表示該實施例的探測端子、感測器端子及短 路檢測部的電路圖。 第1 2圖是表示該實施例的電氣檢驗時動作的流程圖。 第13圖是表不晶圓狀態CSP—例的截面圖。 第14圖是表示1C端子高度具有偏差的晶圓狀態CSP的 截面圖。 籲 第1 5圖是表示切割爲各1C片前的晶圓的側面圖。 〔圖號說明〕 1 檢驗裝置 3， 43， 6 3 探測裝置 5， 45， 6 5 檢驗器 7 晶圓 9 載物臺 11 接地配線 13 晶片區域 15 1C端子 17, 47， 6 5 載物臺高度驅動單元 19 驅動機構 21， 49， 6 7 控制部 23， 69 探測卡 25 探測端子 -40- (37)1221199 27 壓 力 感 測器 29 CCD 感 測器 3 1 施 加 電 流測定電壓部 33， 5 3 開關 3 5 恒 流 源 3 7 電 壓 計 39， 59 5 75 接觸判斷 5 1 施 加 電 壓測定電流部 55 恒 壓 源 57 電 流 計 8 1 半 導 體 基板 83 1C 墊 85 配 線 基 板 87 導 電 材 料 89 銅 配 線 層 9 1 銅 凸 塊 93 密 封 樹 脂An example of sampling and measuring the height position of the 15C terminal 15 will be described. The horizontal alignment of the wafer 7 by the CCD (13) (13) 1221199 sensor 2 9 (not shown) is performed in advance, and the IC terminal 15 is horizontally aligned. The position is memorized in the detection device 3. The CCD sensor used here may be used by changing the orientation of the CCD sensor 29 used to measure the height, position, and horizontal position of the detection terminal 25, or it may be prepared instead of the CCD sensor 29. The stage 9 is moved in the horizontal direction, and the IC terminal for sampling and measurement comes immediately below the pressure sensor 27. The stage 9 is raised, and the height position of the 1C terminal 15 measured by sampling is measured by the pressure sensor 27. Thereafter, the stage 9 is lowered. The horizontal movement, ascent, and descent of the stage 9 are repeated, and the number of repetitions is the number of 1C terminals 15 of the sampling measurement to obtain necessary sampling data. Returning to FIG. 4 and continuing the description, the control unit 21 infers the position having the highest height position (the height position closest to the height position of the detection terminal 25) in the wafer 7 based on the sampling measurement result in the above step S2. The height position of the 1C terminal 15 is set based on the estimation result and the height position information of the top of the detection terminal 25, and the above-mentioned estimation is set to the 1C terminal 15 and the detection terminal 25 having the height position closest to the height position of the detection terminal 25. The height of the contact is taken as the contact detection start height of the 1C terminal 15 and the detection terminal 25 (step S 3). The control unit 21 controls the driving of the driving mechanism 19, and raises the stage 9 at a low speed in the height position section above the contact detection starting height. The control unit 21 causes the driving mechanism 19 to be driven to load the object. The height position of the stage 9 · remains the initial 値 horizontal movement, and the 1C terminal 15 of the wafer region 13 that is initially inspected is arranged at a position corresponding to the detection terminal 25 (step -17- (14) (14) 1221199 step S 4) 〇 Electrical inspection (wafer inspection start) is started for the wafer area 13 arranged corresponding to the detection terminal 25. The driving unit 19 is driven at a high speed by the control unit 21, so that the stage 9 is raised from the initial height position to the contact detection start height (step S5). The switch is turned on by the control of the control unit 21 3 3. From the constant current source 35, a current of, for example, -10 // A is applied to the detection terminal 25 through the switch 33 (step S6). The voltage of each detection terminal 25 is measured by the voltmeter 37 (step S7). When the measured voltage is smaller than a predetermined voltage set in advance, the voltmeter 37 outputs an electric signal with a logic value of 0 as a contact determination signal. When the measured voltage is higher than a predetermined voltage, an electric signal with a logic value of 1 is output. The contact judging unit 39 judges whether the voltage of the detection terminal 25 is equal to or higher than a predetermined voltage based on the output logic 値 of the voltmeter 37, that is, whether the detection terminal 25 is in contact with the IC terminal 15 or not. When all the contact judgment signals from the voltmeter 37 are logic 0 (smaller than the specified voltage), the contact judgment unit 39 outputs an electrical signal with logic 0, that is, which of the detection terminals 25 is not connected to the IC terminal 1. 5 contact; when a contact judgment signal from the voltmeter 3 7 has a logic value of 1 (above the specified voltage), the contact judgment unit 39 outputs an electrical signal with a logic value of 1, that is, to determine a certain detection terminal 25 and 1C terminal 1 5 Touch (step S 8). When the contact judging unit 39 outputs an electric signal with logic “0”, that is, in the case where the detection voltage of any of the voltmeters 37 is lower than the prescribed voltage (“No” in step S 8 (15) (15) 1221199), the control unit 2 1 It is determined whether or not the height position of the stage 9 (the height of the stage) is a restriction 値 (step S 9). The control unit 21 sets a limit 値 for the ascent of the stage 9 to prevent the detection terminal 25 from being pressed too strongly against the wafer 7 and causing damage to the wafer 7 and the detection terminal 25. In step S9, when it is determined that the height of the stage 9 has not reached the limit 値, the control unit 21 controls the driving of the driving mechanism 19 'so that the stage 9 only rises by, for example, 10 μm (step S10). At this time, 'the voltage of each detection terminal 25 is continuously measured by the voltmeter 37 (step S7)', and the contact between the 1C terminal 15 and the detection terminal 25 is determined (step S8). In step S9, if it is determined that the height of the stage 9 reaches the limit 値, the control unit 21 judges the wafers in the wafer region 13 under inspection as unqualified (step S1 1), so that the stage 9 is lowered to the initial stage.値 Height position. In this way, damage to the wafer 7 and the detection terminal 25 caused by the excessive pressing of the detection terminal 25 against the wafer 7 can be prevented. For wafer regions 1 to 3 which are judged to be unacceptable, the wafer inspection is ended (wafer inspection is completed). In step S8, when the contact judging unit 39 outputs an electric signal with a logic value of 1, that is, when the detection voltage of a certain voltmeter 37 is equal to or higher than a predetermined voltage (YES in step S8), the control unit 21 responds to the driving mechanism. The drive of 19 is controlled so that the stage 9 only rises by a predetermined amount, for example, 40 // m (step S 1 2). ○ The detection voltage of a certain voltmeter 37 is higher than a predetermined voltage, and it is at a certain detection terminal 25. When making contact with the 1C terminal 15, by raising the stage 9 only by a predetermined amount from this time, the accuracy of the contact between all the detection terminals 25 and the 1C terminal 15 can be improved. It can prevent the detection terminal 25 from being pressed too strongly against the wafer -19- (16) (16) 1221199 7 and damage to the detection terminal 25 may be caused. In this way, stable contact between the 1C terminal 15 and the detection terminal 25 can be achieved. The stage 9 is raised only by a predetermined amount, so that all the detection terminals 25 and the 1C terminal 15 are brought into contact with each other, and then the normal inspection procedure is performed to perform an electrical inspection of the IC area 1 3 during inspection, and judge and inspect the IC area 1 3 Whether the corresponding 1C wafer to be tested is qualified (step S13). After the set electrical inspection is performed, the stage 9 is lowered to the initial height position, and the wafer inspection is completed for the wafer region 13 under inspection (wafer inspection is completed). After the wafer inspection is completed, it is determined whether or not the inspection of all wafer regions 13 in the wafer 7 is completed (step S 1 4). When there is an unchecked wafer area 1 3 (No in step S 1 4), the driving of the driving mechanism 19 is controlled by the control unit 21 so that the stage 9 moves horizontally while maintaining the height position of the initial frame, and The 1C terminal of the wafer area 1 3 to be inspected next is arranged at a position corresponding to the detection terminal 25 (step S 1 5), and an electrical inspection of the wafer area 1 3 is started (wafer inspection start). If it is determined in step S14 that all the wafer regions 13 have completed the electrical inspection (YES in step S14), the wafer 7 placed on the stage 9 ends the electrical inspection (group end). According to this embodiment, even when the IC terminal height deviation on the wafer 7 is large, the contact between the 1C terminal 15 and the detection terminal 25 is detected, and the stage 9 is raised only by a predetermined amount from the detection time to each wafer area.丨 3 implements the above operation, and therefore, stable contact between the IC terminal 15 and the detection terminal 25 can be achieved in all the wafer regions 1 3. In the embodiment shown in FIG. 1, when the 1C terminal 15 is brought into contact with the detection terminal 25 -20- (17) (17) 1221199 for electrical inspection, the set constant current detection factor is applied to the detection terminal 25. The 1C terminal 15 is in contact with the detection terminal 25 due to a voltage change in the detection terminal 25. However, the present invention is not limited to this. A set constant voltage may be applied to the detection terminal 25 to detect the cause. The contact between the C terminal 5 and the detection terminal 25 is caused by a change in current in the detection terminal 25, and the contact between the IC terminal 15 and the detection terminal 25 is detected. This embodiment will be described below. Fig. 5 is a schematic configuration diagram showing another embodiment of an inspection device for a semiconductor device, and Fig. 6 is a block diagram showing this embodiment. The same parts as those in Figs. 1 and 2 are marked with the same symbols, and the description of the corresponding parts is omitted. The inspection device 41 is composed of a detection device 43 and a checker 45. The detection device 43 is used to make a plurality of detection terminals contact the 1C terminal of the semiconductor device, and the tester 45 is provided for performing 1C electrical operation through the detection terminal and the 1C terminal. Inspection department of inspection. In Figs. 5 and 6, the means for determining the test result, such as the supply of a test signal set for performing the 1C electrical test, is omitted. The detection device 43 is provided with a stage 9, a ground wiring 11, a detection insert 23, a pressure sensor 27, a CCD sensor 29, and a stage height driving element 47. The stage 9 is used for arrangement and formation. Wafer 7 having wafer region 13 and 1C terminal 15. The stage height driving element 47 includes a driving mechanism 9 and a control unit 49 for controlling the driving mechanism 19 (see FIG. 6). The output signal of the pressure sensor 27 and the output signal of the CCD sensor 29 are sent to the control unit 49 of the stage height driving unit 47. The tester 45 is provided with six applied voltage measurement current sections 51 as electrical measurement sections. Each of the detection terminals 25 is provided with a voltage measurement current unit 51, and the detection terminals 25 and the voltage measurement current unit 51 are electrically connected. -21-(18) (18) 1221199 Fig. 7 is a circuit diagram showing the wafer 7, the detection terminal 25, and the applied voltage measurement current section 51. The applied voltage measurement current section 51 is composed of a switch 51, a constant voltage source 55 as a power supply section, and an ammeter 57 as an electrical measurement section. The on / off switching of the switch 53 is controlled by the control unit 49. One terminal of the switch 53 is connected to the detection terminal 25, and the other terminal is connected to the constant voltage source 55. The ammeter 5 7 is connected in series to the wiring between the switch 5 3 and the constant voltage source 5 5. For example, when the measured current is smaller than a predetermined current that is set in advance, the contact determination signal of the applied voltage measurement current section 51 is an electrical signal with a logic value of 0. When the measured current is greater than a predetermined current, the contact determination signal is a logic value of 1. electric signal. The constant voltage source 5 5 supplies a constant voltage of, for example, -1 V (volts). The constant voltage source 55 may be provided in each of the applied voltage measurement current sections 51, or may be shared by a plurality of applied voltage measurement current sections 51. In this embodiment, a P-type substrate component is used as the wafer 7 as an inspection target. As shown in FIG. 5, the wafer 7 is connected to a ground potential via a stage 9 and a ground wiring 11. Therefore, the pn surface junction diode having the wafer 7 and the cathode connected to the 1C terminal 15 and the anode connected to the ground potential is equivalent. Returning to FIG. 5 and FIG. 6, the description is continued. A contact judging unit 59 is provided in the inspection unit 45 for measuring a contact judging signal of the current unit 51 according to the applied voltage, and detecting any of the 1C terminal 15 and the detection terminal 25. s contact. As the contact judging section 59, for example, a six-input OR gate logic circuit can be used. An output signal of the contact judging section 59 is sent to the control section 49 of the stage height driving element 47. In this embodiment, the first form of the contact detection mechanism of the present invention is composed of a switch 5 3, a constant voltage source 5 5 and an applied voltage measuring current measuring unit 5 7-22- (19) (19) 1221199 5 1. A stage 9, a ground wiring 11, and a contact judgment unit 5 9. Fig. 8 is a flowchart showing the operation at the time of electrical inspection in the embodiment. The operation during the electrical inspection of this embodiment will be described with reference to FIGS. 5 to 8. The operation of the first inspection method of the semiconductor device according to another embodiment of the present invention will be described based on the description of the operation. With a wafer as a group, a series of actions are performed for each group to start the electrical inspection of the IC (group start). At the start of the inspection, the stage 9 is arranged at the initial height position, and the switch 53 is turned off. The height position and the horizontal position of the tip of the detection terminal 25 are measured by the CCD sensor 29, and the height position and the horizontal position information of the above-mentioned detection terminal 25 are sent to the control unit of the stage height driving element 47. 49 (step S31). The control unit 49 drives the driving mechanism 19 to raise the stage 9 and samples the height position of the 1C terminal 15 based on the detection signal from the pressure sensor 27 (step S 3 2). After that, the stage 9 is returned to the initial height position. The control unit 49 estimates the height position of the 1C terminal 15 having the highest height position (the height position closest to the height position of the detection terminal 25) in the wafer 7 based on the sampling measurement result in the above-mentioned step S32. The result of the estimation and the height position information of the top end of the detection terminal 25. The height at which the 1C terminal 15 in contact with the detection terminal 25 at the height position closest to the height position of the detection terminal 25 is set as the 1C terminal 15 and the detection terminal. The contact detection start height of 2 5 (step S 3 3). The control unit 4 9 controls the driving of the drive mechanism 19 to raise the stage 9 at a low speed in a height position section above the contact detection start height. 23- (20) (20) 1221199 The control unit 49 causes the driving mechanism 19 to be driven so that the height position of the stage 9 is maintained at the initial level and horizontally moved. The 1C terminal 15 of the wafer region 13 that is initially inspected is arranged in the same position as The position corresponding to the detection terminal 25 (step S34) 〇 For the wafer area corresponding to the detection terminal 25! 3. Start the electrical inspection (wafer inspection begins). The control unit 49 causes the driving mechanism 9 to be driven at a high speed, so that the stage 9 is raised from the initial height position to the contact detection start height (step S 3 5) The switch 53 is turned on by the control of the control unit 49, A voltage such as -IV is applied from the constant voltage source 55 to the detection terminal 25 through the switch 53 (step S36). The current of each detection terminal 25 is measured by the ammeter 57 (step S3 7). When the measured current ratio is When the preset predetermined current is small, the ammeter 57 outputs an electric signal with a logic value of 0. As a contact determination signal, an electric signal with a logic value of 1 is output when the predetermined current is higher than the predetermined value. According to the output logic of the ammeter 57, it is determined whether the current of the detection terminal 25 is greater than a predetermined current, that is, whether the detection terminal 25 is in contact with the 1C terminal 15. When the contact determination signals from the ammeter 5? 〇 (smaller than the specified current) When the “contact judgment unit 5 9 outputs an electric signal with logic“ 0 ”, that is, which of the detection terminals 25 are not in contact with the IC terminal 15; when a contact judgment signal from the ammeter 5 7 No. When the logic signal is 1 (above the specified voltage), the contact judgment unit 5 9 outputs an electric signal with the logic signal being 1, that is, a certain detection terminal 25 and 1 are judged. <: The terminal 15 is in contact (step S 3 8). -24-(21) (21) 1221199 When the contact judging unit 59 outputs an electric signal with a logic value of 0, which means that the detection current of any ammeter 5 7 is smaller than the specified current ("No" at step s8 8) 49 determines whether the height position of the stage 9 (stage height) is a restriction 値 (step S 3 9). The control unit 49 sets a restriction 値 for the ascent of the stage 9 to prevent the detection terminal 25 from being excessively pressed against the crystal The circle 7 causes damage to the wafer 7 and the detection terminal 25. In step S39, when it is determined that the height of the stage 9 has not reached the limit 値, the control unit 49 controls the driving of the driving mechanism 19 so that the object is loaded. The stage 9 only rises, for example, 10 μm (step S40). At this time, the voltage of each detection terminal 25 is continuously measured by the ammeter 57 (step S37), and the contact between the 1C terminal 15 and the detection terminal 25 is determined (step S38). In step S39, When it is determined that the height of the stage 9 has reached the limit 値, the control unit 49 judges the wafers in the wafer area 13 in the inspection as unqualified (step S4 1), and lowers the stage 9 to the initial height position. To prevent the detection terminal 2 5 from being pressed too strongly against the wafer 7 as The damage to the wafer 7 and the detection terminals 25 is caused. For the wafer area 1 3 that is judged to be unqualified, the wafer inspection is ended (wafer inspection is completed). At step S 3 8, when the contact judgment unit 5 9 outputs logic 値, 1 electrical signal, that is, when the detection current of a certain ammeter 5 7 is above a predetermined current (YES in step S38), the control unit 49 controls the driving of the driving mechanism 19 so that the stage 9 only rises in advance and is set in advance A certain amount is, for example, 40 μΠ1 (step S42). When the detection current of a certain ammeter 57 is equal to or more than a predetermined current, when a certain detection terminal 25 is in contact with the IC terminal 15, the load is made from that time. Table-25- (22) (22) 1221199 9 Only raising a preset amount can improve the accuracy of the contact between all the detection terminals 25 and 1C terminal 15. It can prevent the detection terminal 25 from pressing too strongly against the wafer 7 to cause detection. The terminal 25 is damaged, etc. In this way, stable contact between the 1C terminal 15 and the detection terminal 25 can be achieved. 'The stage 9 is only raised by a predetermined amount, so that all the detection terminals 25 contact the 1C terminal 15 and enter the normal test Then, perform the electrical inspection of the 1C area 13 in the inspection, and determine whether the 1C wafer corresponding to the inspected 1C area 13 is qualified (step S43). After performing the set electrical inspection, the stage 9 is lowered. At the initial height position, wafer inspection is completed for wafer regions 1 to 3 (wafer inspection is completed). After wafer inspection is completed, it is determined whether inspection of all wafer regions 13 in wafer 7 is completed (step S44). In the case of inspecting the wafer area 1 to 3 (NO in step S44), the control of the driving mechanism 19 by the control unit 49 causes the stage 9 to move horizontally while maintaining the height position of the initial frame, and the wafer area to be inspected next The 1C terminal of 1 3 is arranged at a position corresponding to the detection terminal® 25 (step S45), and an electrical inspection is started for the wafer region 13 (wafer inspection is started). In step S44, if it is determined that all wafer regions 13 have completed the electrical inspection (YES in step S44), the electrical inspection is completed for the wafer 7 'placed on the stage 9 (group end). According to this embodiment, even when the 1C terminal height deviation on the wafer 7 is large, the detection of the contact between the 1C terminal 15 and the detection terminal 25 will cause the stage 9 to rise only by a predetermined amount from the detection time, for each wafer area. [3] The above operation is performed, so that the stable contact between the 1C terminal 1 5 -26- (23) (23) 1221199 and the detection terminal 25 can be achieved in all the wafer regions 13. Fig. 9 is a schematic configuration diagram showing still another embodiment of an inspection device for a semiconductor device, and Fig. 10 is a block diagram of this embodiment. The same parts as those in Figure I · 4 are marked with the same symbols, and the description of the corresponding parts is omitted. The inspection device 61 is composed of a detection device 63 and a checker 65, the detection device 63 is used to make a plurality of detection terminals contact the 1C terminal of the semiconductor device, and the checker 65 is provided for performing 1C by the detection terminal and the 1C terminal. Inspection department for electrical inspection. In Figs. 9 and 10, the means for determining the test result, such as the supply of the test signal set for the 1C electric test, is omitted. The detection device 63 is provided with a stage 9, a ground wiring 11, a detection card 6 9, a pressure sensor 27, a CCD sensor 29, and a stage height driving unit 65. The stage 9 is used for A wafer 7 having a wafer region 13 and a 1C terminal 15 formed thereon is arranged. The stage height driving unit 65 includes a driving mechanism 19 ′ and a control unit 67 (see FIG. 10) for controlling the driving mechanism 19. The output signal of the pressure sensor 27 and the output of the CCD sensor 29 The signal is sent to the control unit 67 of the stage height driving unit 65. The tester 65 is provided with six short-circuit detection sections 73 as electrical measurement sections. A short-circuit detection section 73 is provided opposite each of the detection terminal 25 and the sensor terminal 71. The detection terminal 25 and the sensor terminal 71 are electrically connected to the short-circuit detection section 73. FIG. 11 is a diagram showing the configuration of the detection sub 2 5 ′ and the sensing sperm 7 1 and the short-circuit detection section 7 3 in this embodiment. The sensor terminal 7 1 is disposed above the detection terminal 25 (position opposite to the stage 9 -27- (24) (24) 1221199), and is disposed with a distance from the detection terminal 25 (refer to the first 1 A)). The stage 9 rises, the detection terminal 25 contacts the 1C terminal 15 (not shown), and the stage 9 rises again, pressing against the detection terminal 25, and the detection terminal 25 and the sensor terminal 71 touch each other (refer to the 1 1 B). The short-circuit detection unit 73 is used for electrically detecting the contact between the detection terminal 25 and the sensor terminal 71, and can switch on / off of the detection operation internally. When the detection terminal 25 is not in contact with the sensor terminal 71, the contact determination signal of the short-circuit detection section 73 is an electrical signal with logic 値. When the detection terminal 25 is in contact with the sensor terminal 71, a short circuit is detected. The contact determination signal of the unit 73 is an electric signal having a logic value of 1. Returning to FIG. 9 and FIG. 10, the description is continued. A contact judging unit 75 is provided in the inspection unit 65 to detect any one of the IC terminal 15 and the detection terminal 2 5 based on the contact judging signal of the short-circuit detection unit 73. s contact. As the contact judging section 75, for example, a six-input OR gate logic circuit can be used. An output signal of the contact judging section 75 is sent to the control section 67 of the stage height driving unit 65. In this embodiment, the second form of the contact detection mechanism of the present invention is composed of a sensor terminal 71, a short-circuit detection section 73, and a contact determination section 75. Fig. 12 is a diagram showing the operation during the electrical inspection of this embodiment. Flowchart. The operation at the time of electrical inspection in this embodiment will be described with reference to FIGS. 9-12. The second embodiment of the method for testing a semiconductor device according to the present invention will be described by explaining the operation. With a wafer as a group, a series of actions are performed for each group to start the electrical inspection of the IC (group start). At the start of the inspection, the stage 9 is arranged (25) (25) 1221199 At the initial height position, the short-circuit detection section 73 is opened. The height position and the horizontal position of the tip of the detection terminal 25 are measured by the CCD sensor 29, and the height position and the horizontal position information of the above-mentioned detection terminal 25 are sent to the control unit of the stage height drive unit 65. 6 7 (step S 5 1). The control unit 6 7 ′ driving mechanism 19 is driven to raise the stage 9, and the height position of the I c terminal 15 is sampled and measured by the detection signal of the pressure sensor 27 (step S52). After that, the stage 9 is returned to the initial height position. The control unit 6 7 estimates the 1C terminal 15 having the most localized position (the height position closest to the height position of the detection terminal 25) in the wafer 7 based on the sampling measurement result in the above step S 5 2. Based on the result of the estimation and the height position information of the top of the detection terminal 25, the height of the contact between the 1C terminal 15 and the detection terminal 25 at the height position closest to the height position of the detection terminal 25 is set as 1C. The contact detection start height of the terminal 15 and the detection terminal 25 (step S53). The control unit 67 controls the driving of the driving mechanism 19 to raise the stage 9 at a low speed in a height position section above the contact detection start height. The driving unit 19 is driven by the control unit 67 so that the height position of the stage 9 is maintained at an initial level and horizontally moved, and the 1C terminal 15 of the wafer region 13 that is initially inspected is arranged at a position corresponding to the detection terminal 25 (step S54). ). Electrical inspection (wafer inspection start) is started for the wafer areas 1 3 arranged corresponding to the detection terminals 25. -29- (26) (26) 1221199 The driving unit 19 is driven at a high speed by the control unit 67 so that the stage 9 is raised from the initial height position to the contact detection start height (step S 5 5). Under the control of the control unit 67, the short-circuit detection unit 73 is turned on, and the contact (short circuit) between the detection terminal 25 and the sensor terminal 71 is detected (step S 5 6). When the detection terminal 25 is in contact with the sensor terminal 71, the short-circuit detection unit 73 outputs a contact determination signal with a logic value of 1. When the detection terminal 25 is not in contact with the sensor terminal 7 1, the short-circuit detection unit 73 outputs a logic value of 0. Contact determination signal. The contact determination unit 75 determines whether or not the detection terminal 25 is in contact with the 1C terminal 15 based on the contact determination signal of the short-circuit detection unit 73. When all the contact judgment signals from the short-circuit detection section 73 are logically zero, the contact judgment section 75 outputs an electrical signal with a logical zero, that is, which of the detection terminals 25 is not in contact with the 1C terminal 15; When a certain contact judgment signal logic 値 of the unit 73 is 1, the contact judgment unit 75 outputs an electric signal with a logic 値 of 1, that is, it is determined that a certain detection terminal 25 is in contact with the 1C terminal 15 (step S 5 7). When the logic 値 is outputted by the contact judging unit 75 (NO in step S57), the control unit 67 judges whether the stage height of the stage 9 is the limit 限制 (step S 5 8). The control unit 67 sets a limit 値 for raising the stage 9 to prevent the detection terminal 25 from being pressed too strongly against the wafer 7 and causing damage to the wafer 7 and the detection terminal 25. In step S58, when it is determined that the height of the stage 9 has not reached the limit 値, the control unit 67 controls the driving of the driving mechanism 19 so that the stage 9 -30-(27) (27) 1221199 rises by only 1 〇 # m (step S 59). At this time, the short-circuit detection unit 7 3 continues to monitor the contact between each of the detection terminals 25 and the sensor terminal 71 (step S 5 6), and determines the contact of the detection terminal 25 with the sensor terminal 71 (step S 5 7). In step S 58, when it is determined that the height of the stage 9 reaches the limit 値, the control unit 67 judges the wafers in the wafer region 13 under inspection as unqualified (step S60), so that the stage 9 is lowered to the initial height. position. In this way, damage to the wafer 7 and the detection terminal 25 caused by the excessive pressing of the detection terminal 25 against the wafer 7 can be prevented. For wafer regions 1 to 3 which are judged to be unacceptable, the wafer inspection is ended (wafer inspection is completed). In step S57, when the logical output of the contact judging unit 75 is "1" (YES in step S57), the control unit 67 controls the driving of the driving mechanism 19 so that the stage 9 only rises by a predetermined amount such as 40 μm (step S 6 1). The output of the contact judging unit 75 becomes logic 値 1 because when a certain detection terminal 25 is in contact with the 1C terminal 15 and the detection terminal 25 is in contact with the sensor terminal 71, the stage 9 is made from this time. Just raising a preset certain amount can improve the accuracy of the contact between all the detection terminals 25 and 1C terminal 15. Furthermore, it is possible to prevent the detection terminal 25 from being excessively pressed against the 1C terminal 15 and causing damage to the 1C terminal 15 and the like. In this way, stable contact between the 1C terminal 15 and the detection terminal 25 can be achieved. The stage 9 is raised only by a predetermined amount, so that all the detection terminals 25 are in contact with the 1C terminal 15 and enter the normal inspection procedure to perform the electrical inspection of the 1C area 13 during inspection, and judge and inspect the 1C area 13- 31-(28) (28) 1221199 Whether the 1C wafer to be tested is qualified or not (step S62). After the set electrical inspection is performed, the stage 9 is lowered to the initial height position, and the wafer inspection is completed for the wafer region 13 under inspection (wafer inspection is completed). After the wafer inspection is completed, it is determined whether the inspection of all the wafer regions I3 in the wafer 7 is completed (step S63). If there is an uninspected wafer region 13 (No in step S63), the control of the drive mechanism 19 is controlled by the control unit 67 so that the stage 9 moves horizontally while maintaining the height position of the initial frame, and the wafer to be inspected next The 1C terminal of the area 1 3 is arranged at a position corresponding to the detection terminal 25 (step S64), and an electrical inspection (wafer inspection start) is started for the wafer area 13. In step S63, if it is determined that the electrical inspection of all the wafer regions 13 is completed (YES in step S63), the electrical inspection is completed for the wafer 7 placed on the stage 9 (group end). According to this embodiment, even if the height of the 1C terminal on the wafer 7 is large, the contact between the 1C terminal 15 and the detection terminal 25 is detected, and the stage 9 is only raised by a predetermined amount from the detection time, and each wafer area is detected. Since the above operation is performed, stable contact between the IC terminal 15 and the detection terminal 25 can be achieved in all the wafer regions 1 3. In the above embodiment, the control unit 21, 4, 9 estimates the height position of the IC terminal 5 at the height position closest to the height position of the detection terminal 25, and positions the IC terminal 5 at the height closest to the detection terminal 25. The height of the contact between the IC terminal 15 and the detection terminal 25 at the position is set as the contact detection starting height of the IC terminal 15 and the detection terminal 25, which is set before the wafer inspection. The stage 9 moves from the initial height position to (29) (29) 1221199 at high speed to the contact detection start height. After the contact detection start height, the stage 9 is moved at a low speed of 10 μm each time. Compared with the case where the stage 9 is raised at a low speed throughout the interval, the inspection time can be shortened. The section where the stage 9 moves up at a low speed is not limited to the section above the height position where the 1C terminal 15 and the detection terminal 25 are in contact with each other at the height position closest to the detection terminal 25, and may include at least The section where the 1C terminal 15 at the height position closest to the detection terminal 25 contacts the detection terminal 25. In the embodiment described with reference to FIGS. 1-4 and the embodiment described with reference to FIGS. 5-8, the wafer 7 is set to the ground potential, but the present invention is not limited to this. The potential is set to a certain level. In the embodiment described with reference to FIGS. 9-12, the stage 9 is set to the ground potential, and the wafer 7 is set to the ground potential. However, in this embodiment, the stage 9 may not be set to the ground potential. Level to make it unstable. In the above-mentioned embodiment of the inspection device, the detection terminal 25 is fixed and only the stage 9 is moved, but the present invention is not limited to this. The stage 9 may be fixed and the detection terminal 25 may be moved, or may be constituted. In order to make both the detection terminal 25 and the stage 9 move. In the embodiment of the inspection device described above, the applied current measurement voltage section 31, the applied voltage measurement current section 51, the short-circuit detection section 73, and the contact determination sections 39, 59, and 75 constituting the contact detection mechanism are provided on the testers 5, 45. , 65, but the present invention is not limited to this, a part of them may be included in the detection devices 3, 43, 63, or all of the contact detection mechanisms may be included in the detection device -33- (30) (30) 1221199 3, 4 3, 6 3 in. In the above-mentioned embodiment of the inspection device, a CCD sensor 29 is provided as a detection terminal position measurement means for measuring the height position and the horizontal position of the top end of the detection terminal 2 5 before the start of the inspection, but as the detection terminal position measurement-setting The means is not limited to the CCD, and may be another means capable of measuring the height position and the horizontal position of the tip of the probe terminal 25 before the start of the inspection. In the above-mentioned embodiment of the inspection device, a pressure sensor 27 is provided as the IC terminal position measurement means for sampling and measuring the height position of the 1C terminal i 5 · before the start of the inspection, but it is not a local measurement method for the 1C terminal position. It is not limited to a pressure sensor, and may be another means capable of sampling and measuring the height position of the 1C terminal before the test is started. The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited thereto, and various changes can be made within the scope of the technical idea of the present invention, all of which belong to the protection scope of the present invention. [Effects of the invention] · In the detection device described in the first patent application range, a contact detection mechanism is provided, and the detection terminal is driven by the driving mechanism so that the detection terminal contacts the 1C terminal. When the 1C terminal approaches, the contact detection mechanism is used to detect the contact between any of the detection terminals and the 1C terminal-; the control unit controls and drives the driving mechanism, and detects the contact time between the detection terminal and the 1C terminal from the contact detection mechanism, The detection terminal and the 1C terminal are caused to move in a direction approaching each other by a predetermined amount. -34- (31) (31) 1221199 In the semiconductor device inspection device described in claim 9 of the scope of patent application, a detection device and an inspection unit are provided, and the detection device of the present invention is provided as the detection device. In the method for inspecting a semiconductor device described in Item 10 of the scope of patent application, it is characterized by including the following steps: when the detection terminal is brought close to the 1C terminal so that the detection terminal contacts the 1C terminal, any one of the above is detected The detection terminal is in contact with the 1C terminal; from the time of detecting the contact, the detection terminal and the 1C terminal are moved toward each other in the direction of approaching each other, and only a predetermined amount is moved so that the detection terminal is in contact with the 1C terminal. Therefore, the contact accuracy between the detection terminal and the 1C terminal can be improved. Furthermore, since the contact time between the detection terminal and the 1C terminal is detected, the detection terminal and the 1C terminal are moved toward each other in the direction of approaching each other, and only a predetermined amount is set. Therefore, the detection terminal can be prevented from being excessively pressed against the 1C terminal. The terminal may cause damage to the 1C terminal. In this way, stable contact between the 1C terminal and the detection terminal can be achieved. The detection device described in the second item of the patent application includes a detection terminal position measurement device and a 1C terminal position measurement device. The detection terminal position measurement device measures the height position of the detection terminal before the inspection is started, and the 1C terminal position. The measuring device measures the height position of the 1C terminal before the start of the inspection; when the detection terminal is close to the 1C terminal by the driving mechanism, the control unit determines the position of the 1C terminal measurement device and the 1C terminal position measurement device based on As a result of the measurement, the driving mechanism is controlled to move the low-speed-35- (32) (32) 1221199 at a low speed at least in a section where the 1C terminal and the detection terminal are located at a height position closest to the height position of the detection terminal. The detection terminal is close to the 1C terminal; the contact detection mechanism starts to detect the contact between the detection terminal and the IC terminal when the low-speed operation of the driving mechanism starts. · In the method of inspection of semiconductor devices described in Item 11 of the scope of the patent application, the height position of the above-mentioned detection terminal before the start of the inspection is measured, and the height position of the above-mentioned 1C terminal before the start of the inspection is sampled; When the 1C terminal approaches, based on the measured height position of the detection terminal and the height position of the 1C terminal, at least the section where the 1C terminal and the detection terminal are located at a height position closest to the _ height position of the detection terminal. The low-speed operation brings the detection terminal close to the 1C terminal; when the low-speed operation starts, the detection of the contact between the detection terminal and the 1C terminal is started. Therefore, the following actions can be performed correctly: from the moment when the contact between the detection terminal and the 1C terminal is detected, the detection terminal and the 1C terminal are moved toward each other by a predetermined amount only in a predetermined amount. Furthermore, the inspection time can be shortened as compared with the case where the operation of moving the detection terminal close to the 1C terminal is performed at a low speed. Φ In the detection device described in item 3 of the patent application scope, before the preset limit is reached, the control unit makes the detection terminal close to the IC terminal, and the contact detection mechanism does not detect the detection terminal and the IC terminal. When the 1C terminal contacts, stop approaching the detection terminal and the 1C-terminal. In the method for testing a semiconductor device described in Item 12 of the scope of patent application, before the preset limit is reached, the detection terminal is brought close to the 1C terminal, and the detection terminal and the 1C terminal are not detected. • 4. (33) (33) 1221199 When contacting 'Stop the detection terminal and the IC terminal. Therefore, the semiconductor device can be prevented from being damaged by being pressed too strongly against the semiconductor device. In the detection device described in item 4 of the scope of patent application, as the first form of the above-mentioned contact detection mechanism, it includes: a wiring section for making the semiconductor device a constant potential; a power supply section for supplying to the detection terminal A current or voltage; an electrical measuring unit for measuring the voltage or current of the detection terminal; a contact judging unit detecting contact between the detection terminal and the IC terminal based on an output signal of the electrical measurement unit. 0 In the first inspection method of the semiconductor device described in item i3 of the scope of patent application, wherein: the semiconductor device is set to a certain potential; the current or voltage is supplied to the detection terminal; the voltage change or current change in the detection terminal is monitored, Detecting contact between the detection terminal and the IC terminal. Therefore, when the above-mentioned detection terminal is brought close to the above-mentioned 1C terminal so that when the detection terminal is in contact with the 1C terminal, the contact between any one of the detection terminals and the 1C terminal can be detected. 0 In the first form of the contact detection mechanism of the detection device described in item 5 of the patent application scope, the wiring section includes a stage on which the semiconductor device is arranged. In the first inspection method for a semiconductor device described in item i 4 of the scope of patent application, the semiconductor device is brought to a constant potential by setting the stage on which the semiconductor device is arranged to a constant potential. Therefore, it is easy to make the semiconductor device a constant potential. In the first configuration of the contact detection machine of the detection device described in item 6 of the scope of application for a patent (37) (34) (34) 1221199, an electrical measurement section is provided at each detection terminal. In the first inspection method for a semiconductor device described in item 15 of the scope of patent application, a voltage change or a current change in the detection terminal is monitored for each detection terminal. Therefore, even when a defective 1C including a certain 1C terminal protrudes highly, it is possible to prevent the detection terminal from being excessively pressed against the semiconductor device to cause damage. In the detection device described in item 7 of the scope of patent application, as the second form of the contact detection mechanism, it includes: the contact detection mechanism is provided with a sensor terminal arranged near the detection terminal, and is used for detection detection The short-circuit detection section where the terminal is electrically connected to the sensor terminal; the sensor terminal is arranged at a position where the sensor terminal is spaced from the detection terminal when the detection terminal is not in contact with the 1C terminal, and due to the detection The contact between the terminal and the 1C terminal is the cause, and the sensor terminal is in contact with the detection terminal. In the second inspection method of the semiconductor device described in item 16 of the scope of patent application, wherein: the sensor terminal is arranged at a position where the sensing terminal is in a state where the detection terminal is not in contact with the 1C terminal, There is a gap between the sensor terminal and the detection terminal, and the contact between the detection terminal and the IC terminal is the cause. The sensor terminal is in contact with the detection terminal. By detecting the electrical connection between the detection terminal and the sensor terminal, the detection terminal is detected. Contact with 1C terminal. Therefore, the detection terminal is brought close to the 1C terminal so that when the detection terminal is in contact with the 1C terminal, the contact between a certain detection terminal and the IC terminal can be detected. Furthermore, even if the potential of the semiconductor device, the 1C terminal, or both is in an indefinite state, the contact between the detection terminal and the 1C terminal can be detected. -38- (35) (35) 1221199 In the second form of the contact detection mechanism of the detection device described in item 8 of the scope of patent application, the contact detection mechanism is provided with the above sensor terminal at each detection terminal. In the second inspection method of the semiconductor device described in item 17 of the scope of patent application, the sensor terminal is arranged for each detection terminal, and the electrical of the detection terminal and the sensor terminal is detected for each detection terminal. Ground connection. Therefore, even in the case of a defective 1C that includes a certain 1C terminal protruding high, it is possible to prevent the detection terminal from being excessively pressed against the semiconductor device and causing damage. [Brief Description of the Drawings] FIG. 1 is a schematic configuration diagram of an embodiment of an inspection device showing a semiconductor device. Fig. 2 is a block diagram showing this embodiment. Fig. 3 is a circuit diagram showing a wafer, a detection terminal, and a current measurement voltage section of the embodiment. φ FIG. 4 is a flowchart showing the operation during the electrical inspection of this embodiment. Fig. 5 is a schematic configuration diagram showing another embodiment of an inspection device for a semiconductor device. Fig. 6 is a block diagram showing this embodiment. Fig. 7 is a circuit diagram showing the wafer, the detection terminal, and the applied voltage measurement current section of this embodiment. FIG. 8 is a flowchart showing the operation at the time of electrical inspection in this embodiment. Fig. 9 is a schematic configuration diagram showing a still another embodiment of an inspection device for a semiconductor device. -39-(36) (36) 1221199. Fig. 10 is a block diagram showing this embodiment. Fig. 11 is a circuit diagram showing a detection terminal, a sensor terminal, and a short-circuit detection section of this embodiment. Fig. 12 is a flowchart showing the operation at the time of electrical inspection in this embodiment. FIG. 13 is a cross-sectional view showing an example of a wafer state CSP. Fig. 14 is a cross-sectional view showing a wafer state CSP having a 1C terminal height deviation. FIG. 15 is a side view showing a wafer before dicing into 1C pieces. [Illustration of drawing number] 1 Inspection device 3, 43, 6 3 Detection device 5, 45, 6 5 Inspector 7 Wafer 9 Stage 11 Ground wiring 13 Wafer area 15 1C terminal 17, 47, 6 5 Stage height Drive unit 19 Drive mechanism 21, 49, 6 7 Control unit 23, 69 Probe card 25 Probe terminal -40- (37) 1221199 27 Pressure sensor 29 CCD sensor 3 1 Current measurement voltage unit 33, 5 3 Switch 3 5 Constant current source 3 7 Voltage meter 39, 59 5 75 Contact judgment 5 1 Applied voltage measurement current section 55 Constant voltage source 57 Current meter 8 1 Semiconductor substrate 83 1C Pad 85 Wiring substrate 87 Conductive material 89 Copper wiring layer 9 1 Copper Bump 93 sealing resin
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