TWI220131B - Chip structure for injection nozzle - Google Patents

Abstract

Disclosed is a chip structure for an injection nozzle, which consists of a fluid structure and a bearing substrate. The fluid structure includes: a liquid spraying chamber, a spraying opening and a heat-resistance member. The heat-resistance member is engaged with the liquid spraying chamber to control the liquid injection from the spraying opening. The bearing substrate is connected with the fluid structure. The bearing substrate is thinned in order to form concave grooves serving as a heat-insulation chamber, the heat-insulation chamber corresponding to the heat-resistance member with respect to the bearing substrate, so as to reduce the dissipation of heat energy through the substrate, to reduce driving voltage power and then to enhance operation frequency and printing speed.

Description

1220131 五、發明說明（1) 【發明所屬之技術領域 可提升熱效率：種喷液頭晶片結# ’特別是關於-種 【先前技術】L夜頭晶片結構。 品質的列印技術，破創新，對於列印 片封裝元件的可靠戶的要求不斷提冋：使得增加噴墨頭晶 熱腔體内的丄式之喷墨頭晶片係藉由熱阻層加 黑哺哈山仏、 使W水遇熱產生氣泡進而將墨水推出。 ^ 1溫度隨即降低，腔體内的溫度也隨之降低，再 ϊ ΐ i::原理將突出的墨水拉回腔體内。然而熱阻層所 、…、里，除了傳輪至墨水之外，也會傳導至與埶阻声 接觸的結構部公t w θ & 曰 產生無法將所二= 基板部分。以致於 :仏應之私壓功率完全利用而產生功率散失的 、…、 接t成所需驅動電壓功率的提高。 、、、因此，習知技術會於熱阻層的底下製作熱絕緣層，以 減Y向下方基板的熱傳輪，提昇熱使用效率。如美國第 4862 1 97號專利所述，係於絕緣基底上製作一絕緣阻障 層，再以其他薄膜成形方式製作熱阻層。絕緣阻障層之製 造方法，一般常在絕緣的矽基底上，藉由熱氧化或是蒸^ 沉積技術於其表面成長約i · 7微米至2· 2微米之厚氧化層， 以作為熱傳輸的絕緣層。然而使用氧化的方法，晶片需要 在爐管中經長時間的氧化過程。另外若為減少熱散失而增 加氧化層厚度，則會直接影響到墨水填充時熱氣泡的消散1220131 V. Description of the invention (1) [Technical field to which the invention belongs can improve thermal efficiency: a kind of liquid ejection head wafer junction # ', especially about-a kind of [prior art] L night head wafer structure. High-quality printing technology, innovative innovations, and requirements for reliable users of printed-chip packaging components are constantly increasing: the type of inkjet head chip that adds the inkjet head crystal thermal cavity is blackened by a thermal resistance layer Feeding Hashan magpie, the water will generate bubbles when heated, and then push the ink out. ^ 1 The temperature is lowered, and the temperature in the cavity is also lowered. Then ϊ ΐ i :: principle pulls the protruding ink back into the cavity. However, in addition to the transmission wheel to the ink, the thermal resistance layer will also be transmitted to the structural part that is in contact with the choke sound. T w θ & So that: Ying Ying's private voltage power is fully utilized and the power is lost, ..., then t becomes the required drive voltage power increase. Therefore, the conventional technology will make a thermal insulation layer under the thermal resistance layer, so as to reduce the heat transfer wheel of the substrate below Y and improve the heat use efficiency. As described in U.S. Patent No. 4,862,197, an insulating barrier layer is made on an insulating substrate, and then a thermal resistance layer is formed by other thin film forming methods. The manufacturing method of the insulating barrier layer is generally usually on an insulating silicon substrate, and a thermally oxidized or vapor-deposited deposition technique is used to grow an oxide layer with a thickness of about 1.7 to 2.2 microns on the surface for heat transfer. Insulation. However, using the oxidation method, the wafer needs to undergo a long oxidation process in the furnace tube. In addition, if the thickness of the oxide layer is increased in order to reduce heat dissipation, it will directly affect the dissipation of thermal bubbles during ink filling.

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速度’使操作頻率降低。 又如美國第50 08689號專利辦、+、 一 -非傳導性層，使用材料為銘氧化心’尸〜離基底結構包含 構，介電結構包含金屬緩衡 或夕虱化物形成介電結 和覆蓋金屬緩衝層的介電層layer) 層。藉由分開熱傳導和電 電；2表面製作熱阻 結構強度。缺而此纴槿/制ίΓ 升效能並增進 難以控制。此、σ構在製作上相當複雜，在製程上亦較 【發明内容】Speed 'reduces the operating frequency. Another example is U.S. Patent No. 50 08689, +, a-non-conductive layer, the material is used to oxidize the heart's body ~ the base structure contains the structure, the dielectric structure contains a metal buffer or a lice compound to form a dielectric junction and A dielectric layer layer) overlying a metal buffer layer. By separating thermal conduction and electricity; 2 surfaces make thermal resistance structural strength. In the absence of this hibiscus / system, it is difficult to control the efficiency and increase. This and σ-structures are quite complicated in production, and they are also more complicated in the manufacturing process. [Summary of the Invention]

2解決習知技術的問題，本發明係提供一 片結構二係：承載基板減薄以鳴對應，阻元； 成隔熱室，藉此減少熱往基板散失，以降低驅動電壓功 進而提高操作頻率並提升列印速度。2 To solve the problems of the conventional technology, the present invention provides a structure of the second system: the carrier substrate is thinned to respond, and the resistance element is formed; a heat insulation chamber is formed to reduce heat loss to the substrate, thereby reducing the driving voltage work and increasing the operating frequency. And speed up printing.

本發明之喷液頭晶片結構，係由流體結構及承載基板 所、、且成。流體結構包含有喷液室、喷孔和熱阻元件，噴液 至提供液體通過並由喷孔喷出，熱阻元件則銜接於喷液室 以4工制液體贺出喷孔，熱阻元件係接收外部之驅動電壓以 產生熱氣泡提供推出液體之能量。承載基板接合於流體結 構’並且承載基板係減薄形成凹槽以作為隔熱室，使隔熱 室間隔承載基板對應於熱阻元件。由此可以減少熱阻元件 產生的熱量往基板之熱傳導，增加液體產生熱氣泡的效 率。如此一來，形成每一墨滴的所需能量也跟著降低。同 時本發明結構更可配合微機電製程來加以完成，無需改變 現有的製程設備。The liquid ejection head wafer structure of the present invention is composed of a fluid structure and a carrier substrate. The fluid structure includes a liquid spraying chamber, a spraying hole and a thermal resistance element. The liquid spraying is to provide liquid to pass through and spray out from the spraying hole. The thermal resistance element is connected to the liquid spraying chamber to discharge the spraying hole with 4 working liquid. The thermal resistance element It receives the external driving voltage to generate hot air bubbles to provide the energy to push out the liquid. The carrier substrate is bonded to the fluid structure 'and the carrier substrate is thinned to form a groove to serve as a heat insulation chamber, so that the heat insulation chamber is spaced from the carrier substrate to correspond to the thermal resistance element. This can reduce the thermal conduction of the heat generated by the thermal resistance element to the substrate, and increase the efficiency of the thermal bubble generated by the liquid. As a result, the energy required to form each droplet is also reduced. At the same time, the structure of the present invention can be completed in cooperation with the micro-electro-mechanical process without changing existing process equipment.

1220131 五、發明說明（3) 為使對本發明的目的、構造特徵及其功能有進一步的 了解’茲配合圖示詳細說明如下： 【實施方式】 請參考第1圖，其為本發明實施例之喷液頭晶片結構 j面不意圖。喷液頭晶片結構係由流體結構100及矽承載 土板1 4 0所組成。流體結構1 〇 〇包含有喷液室11 〇、喷孔1 2 〇 和熱阻元件130，喷液室11〇提供液體通過並由喷孔i 2〇喷 出熱阻元件1 3 0則銜接於喷液室1 1 Q以控制液體噴出喷& 元細包含有形成於石夕承載基板上J = ^134〜Ϊ電層132，並且於其表面覆蓋絕緣層133和保護 ;传盆/電層丄32用以接收外部之驅動電壓，傳輸至熱阻 供推出液體之能量°石夕承載基板140接 ’並且承載基板14G下表面對應熱阻元件 :二m涛:成隔熱室141。其中熱阻層為厚度8〇奈 元件之/埶、銘（TaA1)層，其薄膜阻值直接影響熱阻 2件；％熱功率，而導電層為具有低電阻之銅紹(A1Cu) ^ 、、、巴緣層係由〇 · 5微米之氮化矽（s i 5 碳化矽（SiC)層組合而成，面則令不U.ZbU未之 组金屬層作為保護層表1後盘用以隔離墨水之 之流=槿廣泛應用於各種噴液元件結構，上述 背面噴射流體結構。 側遺贺射机脰結構或 本發明實施例之喷液頭晶片結構，可藉由 一夕承載基板之微機電製程製作而成。請參考第2圖， 1220131 五、發明說明（4) 其為本發明實施例之製造流程圖，包含下列步驟：首先， 提供一石夕承載基板（步驟21〇)，其結晶面為（1〇〇 );於石夕 承載基板之上表面製作並定義出熱阻層與第一導電層（、步 ，22〇);覆蓋絕緣層和保護層（步驟2 3 0 );再以厚光9阻^ ί義半出液室，並與包含喷孔之喷孔片結合以完成流體曰結 ν 4 0 ),於石夕承載晶片之下表面沉積一声〇 5科来 驟2 5 0 );以光微影技術於氮化石夕層表面形成 J阻圖二（步驟2 6 0 )，光阻圖案露出之處預定形成隔熱 i出離子㈣法(Reactive i〇n Et—)去除 =出^亂化矽層（步驟270 )，以ι化碳（CF4)離子進行蝕 “=ί45%之氫氧化鉀(K0H)對石夕承載基板下表面進 订非4向性蝕刻完成隔熱室（步驟28〇)。 可=需製作厚氧化層，節省製造成本。 形成一氧化層，可以更加提高 在表面 喷液所需的電壓降低。亦或維生…=泡的效率，則 度和操作頻率。由於固體之埶傳‘：：電壓可增加列印速 之熱傳導係數又大於氣體，因：s數大於液體，而液體 熱夢導係數低於承載基板之固:：至内可填充液體甚至 通過’同樣可達到增加熱效率的目才料，或是設計為讓墨水 為證明本發明確可達此功 的: 其為不同的喷液頭晶片結構之埶明芩考附件1至附件3， 意圖。模擬示意圖之橫轴為噴^ _元件產生氣泡之模擬示 為溫度，並依照熱之傳導情^碩晶片結構之縱深，縱軸 形拉擬熱氣泡的產生。如附件 1220131 五、發明說明（5) __ 1，係模擬習知技術的喷液頭晶片結構，矽基 =:庠ί化層再和熱阻層接觸。橫軸所代表之縱、、罙具Λ 至右依序為矽基板、氧化層、熱阻層和喷液 I 工 始加熱3微秒之德，苴里 、至 規祭在開 產生氣泡 後#墨水溫度已達攝氏3。〇度，但仍未能 代"，产=:2/斤不，其模擬完全去除矽基板而以墨水取 代表之縱深由左至右依序為墨水、氧化：数 阻層和喷液宫，ά ~ 土 > 礼化層、熱 數，所以可減少熱傳導：匕導係數大於墨水之熱傳導係 後，即產生小氣泡。 此里散失，因此於加熱3微秒之 又如附件3所^： 熱傳導係數，氣體呈，古於墨水之熱傳導係數大於氣體之 矽基板而以命气二有更佳之隔熱性質。其模擬完全去除 空氣、氧化ΐ t熱阻；f轴所代表之縱深由左至右依序為 產生比附件2更明顯^ σ賀液室，於加熱3微秒.之後，即 雖然本發明之較^'、杳^氣泡。 定本發明，任何熟；：：：露如上所述，、然其並非用以限 和範圍内，者》γ* Α 技藝者’在不脫離本發明之精神 保護範圍須視本十、厂开之更動與潤飾，因此本發明之專利 準。 、 况明書所附之申請專利範圍所界定者為1220131 V. Description of the invention (3) In order to have a better understanding of the purpose, structural features and functions of the present invention, the detailed description is as follows: [Embodiment] Please refer to FIG. 1, which is an example of the embodiment of the present invention. The j-plane of the liquid ejection head wafer structure is not intended. The liquid crystal structure of the liquid ejection head is composed of a fluid structure 100 and a silicon bearing soil plate 140. The fluid structure 100 includes a liquid injection chamber 11 〇, an injection hole 12 〇, and a thermal resistance element 130. The liquid injection chamber 11 10 provides liquid to pass through and the thermal resistance element 1300 is ejected from the injection hole i 20, which is connected to The liquid spraying chamber 1 1 Q to control the liquid ejection and spraying. The element contains a J = ^ 134 ~ Ϊelectric layer 132 formed on the Shixi carrier substrate, and the surface is covered with an insulating layer 133 and protection; a basin / electric layer丄 32 is used to receive the external driving voltage and transmit it to the thermal resistance for the energy of the liquid. The Shixi carrier substrate 140 is connected to the bottom surface of the carrier substrate 14G and corresponds to the thermal resistance element: two m Tao: a heat insulation room 141. The thermal resistance layer is a TaA1 layer with a thickness of 80 nanometers, and its film resistance directly affects the thermal resistance of 2 pieces; the thermal power is%, and the conductive layer is copper alloy (A1Cu) with low resistance ^, The edge layer is composed of a 0.5 micron silicon nitride (Si 5 silicon carbide (SiC) layer), and the surface makes the U.ZbU group metal layer as a protective layer. The flow of ink = Hibiscus is widely used in various liquid ejection element structures, and the above-mentioned liquid ejection structure on the backside. The side structure of the ejector or the liquid crystal structure of the liquid ejection head of the embodiment of the present invention can be used to carry the microelectronics of the substrate overnight It is made by the manufacturing process. Please refer to Figure 2, 1220131 V. Description of the invention (4) This is a manufacturing flow chart of an embodiment of the present invention, including the following steps: First, a Shi Xi bearing substrate (step 21) is provided, and its crystal surface Is (100); a thermal resistance layer and a first conductive layer (, step, 22) are produced and defined on the upper surface of the Shixi carrier substrate; a covering insulating layer and a protective layer (step 230); and Thick light 9 resistance ^ Yi semi-liquid discharge chamber, and combined with the orifice plate containing the orifice to complete the fluid At the end of ν 4 0), a layer of 0 05 is deposited on the surface of the underside of the Shi Xi carrier wafer. A photoresist technique is used to form a J-resistance pattern 2 on the surface of the nitrided layer (step 2 6 0). The exposed area of the resist pattern is intended to be formed by Reactive Ion Et—removal = out of the chaotic silicon layer (step 270), and etching with carbonized carbon (CF4) ions. Potassium hydroxide (K0H) is used to order the non-directional etching of the bottom surface of the Shixi carrier substrate to complete the thermal insulation chamber (step 28). Can = thick oxide layer needs to be made to save manufacturing costs. The formation of an oxide layer can further improve The voltage required to spray the liquid on the surface is reduced. Or the survival ... = the efficiency of the bubble, the degree and the operating frequency. Because of the transmission of solids' :: The voltage can increase the printing speed, and the thermal conductivity is greater than the gas, because: s The number is greater than the liquid, and the thermal conductivity of the liquid is lower than the solid of the carrier substrate :: The liquid can be filled to the inside, and even the purpose of increasing the thermal efficiency can be achieved, or it is designed to allow the ink to prove that the present invention can indeed achieve this. Work: it is different from the structure of the liquid ejection head chip. 3. Intention. The horizontal axis of the simulation diagram is spraying. The simulation of the bubble generated by the element is shown as the temperature. According to the depth of the heat transfer, the vertical axis draws the generation of thermal bubbles. See Annex 1220131. Description of the Invention (5) __ 1. It is a structure of a liquid ejection head that simulates a conventional technology. The silicon-based layer is connected to the thermal resistance layer. The vertical axis, horizontal axis, and Λ to the right represented by the horizontal axis are in order. For the silicon substrate, the oxide layer, the thermal resistance layer, and the spray liquid I, the heating process lasted for 3 microseconds. After the air bubbles were generated in the Bali and Zhiji festivals, the #ink temperature reached 3.0 degrees Celsius, but it still failed to replace ;, Production =: 2 / catty, its simulation completely removes the silicon substrate and replaces the depth of the table with ink. From left to right, the ink is sequentially oxidized: a number resist layer and a liquid spray palace. Ά ~ 土 > etiquette layer , Heat number, so you can reduce heat conduction: After the conductivity coefficient is greater than the thermal conductivity of the ink, small bubbles will be generated. It is lost here, so it is heated for 3 microseconds, as shown in Annex 3 ^: Thermal conductivity, gas, the thermal conductivity of ancient ink is greater than the silicon substrate of gas, and life and gas have better thermal insulation properties. Its simulation completely removes air and yttrium t thermal resistance; the depth represented by the f-axis is from left to right in order to generate more obvious than the attachment 2 σ σ liquid chamber, heated for 3 microseconds. After that, although the invention More ^ ', 杳 ^ bubbles. Make the present invention, any familiarity ::: As mentioned above, but it is not intended to be within the scope and scope, "gamma" Α artist must not be deviated from the spirit of the invention Changes and retouching are therefore patented. The scope of the patent application attached to the statement of status is defined as

1220131 圖式簡單說明 第1圖為本發明實施例之喷液頭晶片結構示意圖； 第2圖為本發明實施例之製造流程圖；及 附件1至附件3為不同的喷液頭晶片結構之熱阻元件產 生氣泡之模擬示意圖。 【圖式符號說明】 100 流體結構 110 喷液室 120 喷孔 130 熱阻元件 131 熱阻層 132 導電層 13 3 絕緣層 1 3 4 保護層 14 0 矽承載基板 141 隔熱室 步驟2 1 0 提供一矽承載基板 步驟2 2 0 於矽承載基板之上表面製作並定義出熱阻 層與第一導電層 步驟2 3 0 覆蓋絕緣層和保護層 步驟2 4 0 以厚光阻層定義出喷液室，並與包含喷孔 之噴孔片結合以完成流體結構 步驟2 5 0 於矽承載晶片之下表面沉積一層0 . 5微米之 氮化矽層 步驟2 6 0 以光微影技術於氮化矽層表面形成光阻圖1220131 Brief description of the drawings. Figure 1 is a schematic diagram of the structure of the liquid ejection head wafer according to the embodiment of the present invention; Figure 2 is a manufacturing flow chart of the embodiment of the present invention; and Annexes 1 to 3 are the heat of different liquid ejection head wafer structures. A schematic diagram of a bubble generated by a resistive element. [Illustration of symbolic symbols] 100 fluid structure 110 liquid spray chamber 120 spray hole 130 thermal resistance element 131 thermal resistance layer 132 conductive layer 13 3 insulating layer 1 3 4 protective layer 14 0 silicon carrier substrate 141 heat insulation chamber step 2 1 0 provide A silicon carrier substrate Step 2 2 0 Manufacture and define the thermal resistance layer and the first conductive layer on the upper surface of the silicon carrier substrate Step 2 3 0 Cover the insulating layer and the protective layer Step 2 4 0 Define the spray liquid with a thick photoresist layer Chamber, and combined with the nozzle plate containing the nozzle hole to complete the fluid structure step 2 50 deposit a 0.5 micron silicon nitride layer on the lower surface of the silicon carrier wafer step 2 60 using photolithography to nitride Photoresist pattern on the surface of the silicon layer

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Claims (1)

1^20131 六、申請專利範圍 1 · 一種噴液頭晶片 一流體結構 件’該噴液室提 件銜接於該喷液 係接枚外部之驅 量；及 一承載基板 係減薄形成凹槽 承載基板對應於 2·如申請專利範圍 隔熱室係為包含 3 ·如申請專利範圍 隔熱室係充填液 4 ·如申請專利範圍 隔熱室係提供墨 5·如申請專利範圍 隔熱室係充填熱 6 ·如申請專利範圍 熱阻元件係由< 接收外部之驅動 供推出液體之能 7.如申睛專利範圍 流體結構係為上 背面喷射流體結 結構，其包含有： ，包含有一喷液室、一喷孔和一熱阻元 供液體通過並由該喷孔喷出，該熱阻元 室以控制液體噴出該喷孔，該熱阻元件 動電壓以產生熱氣泡提供推出液體之能 ’接合於該流體結構，並且該承載基板 狀以作為一隔熱室，使該隔熱室間隔該 該熱阻元件。 第1項所述之噴液頭晶片結構，其中該 氣體之空腔。 第1項所述之嘴液頭晶片結構，其中該 體。 ^ 1項所述之嘴液頭晶片結構，其中該 水通過。 =1、乂所述之喷液頭晶片結構，其中該 ¥係數低於該承載基板之固體材料。 弟1項所述之嗜、、右 ^ 賀夜碩晶片結構，其中該 熱阻層和一導番昆 ^ ^ ^ ν寬層所組成，該導電層係 包壓，傳輪至兮备 量。 4熱阻層使其產生熱量提 弟1項所述之喷、、右 ^ ^ ^ /夜碩晶片結構，其中該 故貧射流體4 士；I：巷 構其中之—、、Ό構、側邊喷射流體結構和1 ^ 20131 VI. Application patent scope 1 · A liquid ejection head wafer-a fluid structure 'the liquid ejection chamber lifting piece is connected to the external drive of the liquid ejection system connector; and a carrier substrate is thinned to form a groove to carry The substrate corresponds to 2. If the patented range of the insulated room is included 3. If the patented range of the insulated room is filled with liquid 4. If the patented range of the insulated room is provided with ink 5. If the patented range of the insulated room is filled Heat 6 · If the patent application range, the thermal resistance element is to receive the external drive for the purpose of pushing out the liquid. 7.If the patent scope of the patent application, the fluid structure is a fluid junction structure on the top and back, which includes: Chamber, a spray hole and a thermal resistance element for the liquid to pass through and spray out from the spray hole, the thermal resistance element chamber controls the liquid to spray out of the spray hole, and the thermal resistance element generates a thermal bubble to provide the energy to push out the liquid ' It is bonded to the fluid structure, and the carrier substrate is shaped as a heat insulation chamber, and the heat insulation element is separated from the heat insulation chamber. The liquid crystal head wafer structure according to item 1, wherein the cavity of the gas. The nozzle liquid head wafer structure according to item 1, wherein the body. ^ The nozzle liquid head wafer structure according to item 1, wherein the water passes through. = 1. The liquid crystal structure of the liquid ejection head described in 乂, wherein the ¥ coefficient is lower than the solid material of the carrier substrate. He Yeshuo's chip structure described in item 1 above, where the thermal resistance layer and a conductive Fankun ^ ^ wide layer are composed, and the conductive layer is packed and transferred to the reserve. 4 The thermal resistance layer causes it to generate heat. The nozzle structure described in item 1, right ^ ^ ^ / Yeshuo wafer structure, in which the poor jet fluid is 4 ；; I: Lane structure which is-,, structure, side Edge jet fluid structure and 1220131 六、申請專利範圍 8. 如申請專利範圍第1項所述之喷液頭晶片結構，其中該 承載基板之材質為矽。 9. 如申請專利範圍第8項所述之喷液頭晶片結構，其中該 承載基板係利用氫氧化鉀蚀刻液進行非等向性#刻以減 薄形成凹槽。1220131 VI. Scope of patent application 8. The liquid crystal head wafer structure described in item 1 of the scope of patent application, wherein the material of the carrier substrate is silicon. 9. The liquid ejection head wafer structure according to item 8 of the patent application scope, wherein the carrier substrate is anisotropically etched with a potassium hydroxide etching solution to form a thin groove. 第13頁Page 13