TW595024B - Method for real-time monitoring the thickness of a piezoelectric membrane during wet etching - Google Patents

Method for real-time monitoring the thickness of a piezoelectric membrane during wet etching Download PDF

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TW595024B
TW595024B TW92112485A TW92112485A TW595024B TW 595024 B TW595024 B TW 595024B TW 92112485 A TW92112485 A TW 92112485A TW 92112485 A TW92112485 A TW 92112485A TW 595024 B TW595024 B TW 595024B
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piezoelectric material
wet
item
thickness
transducer
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TW92112485A
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Chinese (zh)
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TW200425553A (en
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Pei-Ren Jang
Chi-Yuan Li
Jeng-Jung Wu
Yung-Yu Chen
Shr-Yung Bau
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Pei-Ren Jang
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  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)

Abstract

An apparatus for real-time monitoring the thickness of a piezoelectric membrane during wet etching is disclosed, which has one piezoelectric membrane; at least one pair of interdigital transducers on a first surface of the piezoelectric membrane; one membrane holder for supporting said piezoelectric membrane; one network analyzer connecting with the interdigital transducers; and one etching solution contacting with a second surface of said piezoelectric membrane; wherein a surface acoustic wave (SAW) is induced and transmitted on said piezoelectric membrane when applying a voltage to the interdigital transducers, and the network analyzer monitors the central frequency simultaneously in wet etching process. A method for real-time monitoring the thickness of a piezoelectric membrane during wet etching is also described here.

Description

595024 玫、發明說明 (發明說明應敘明:發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明) 一、發明所屬之技術領域 、、 本發明係關於一種應用在濕#刻塵電材料時之厚度 即時監控裝置與方法,尤指一種應用在濕蝕刻石英薄膜之 厚度即時監控裝置與方法。 一、先前技術 15 20 表面聲波(SAW: Surface Acoustic Wave )元件以製作 渡波器與共振器為主,其廣泛應用於行動電話、呼叫器、 無線電話、衛星通訊系統、影音訊號處理及保全、防盜、 電視轉頻器等系統中。在行動通訊系統中,新的發展以朝 向高操作頻率、輕薄短小、且便於大量生產邁進。而因為 ,振器的操作頻率與基材的厚度成反比關係,故為了達到 f的操作頻率,基材的厚度必須做的愈薄。通常要得到較 薄的基材可透過三種技術獲得,分別為濕_、電漿钱刻、 ^機械研磨。其中電漿蝕刻控制頻率最為精準,但設備 最為昂貴;而機械研磨受限於機械操作,無法得到所:之 高操作頻率(如石英薄膜之極限厚度約為33聰,所得; :5〇MHz),且不易於量產。就難刻製程而言 =但由純刻速率與溫度、濃度、時間、授掉與否皆 一關係,故通常在量產的過程,蝕刻深度是以 2刻所需之時間;或者在浸置於㈣液—段 刻㈣,無法精確地得: 需"性的將基材取出’頗為不便與 7 25 595024 5,942,1G0『晶體餘刻監測裝置(CrystalEtehMGn—』中, 即是將整個蝕刻石英系統視為一電鍍系統,一電極接地, 另-電極與-監測平板相連;由於石英與監測平板同時作 =卜故可即時偵測石英厚度。但其監測頻率極限約為 且在整個蝕刻系統中,僅能就單-石英薄膜進行 頻率彳貞測。 在祕刻巾,準確的得知壓冑材_厚料於後續 程與頻率控制極為番 .〇 ^ ^ ± , 、 ^ ”、要。在目刖的表面聲波元件,壓電材 -在::二度的需求由幾微米至幾百微米間,故急需提供 在“餘刻液中即時量測微米級之壓電材料的方法。 三、發明内容 的係在提供—種在錢_電材料 15 氣及之壓電材料薄膜厚度,不需將壓電枋料移至空 製程盥-、1杜使/、易於即時監控厚度與方便操作,並對後續 成本::严上之頻率控制有更佳之效果,並在量產中減少 成本增加壓電材料厚度精準度。 本發明之另—日从μ丄 20 厚度”,#提供—種祕刻壓電材料之 厚户, 此在濕餘刻時精準量測壓電材料的 的特點。此裝置具備有高精準度、架構簡單、與易於量產 為達成上述目的,士1 時敗批士 本铖月之濕姓刻壓電材料之厚度即 ’主要步驟包含:在一壓電材料之一第一表面 8 巧024 形成至少一雙4又指狀換能器;將該叉指狀換能器與一臣t 控頻率系統相連接,並將相反於該壓電材料之第一表面现 不^該叉指狀換能器的一第二表面浸入於一濕钱刻液中, 使浸潰於該兹刻液的該壓電材料開始進行餘刻;由該 頻率系統輸入一電壓於其中一該又指狀換能器,使 材料會因壓電效應產生—表面聲波,該表面聲波並傳遞至 另一相對應之該又指狀換能器,該相對應之叉指狀換能器 ,收該表面聲波並轉換為電訊號輸出至該監控頻率系統: 藉由該監控頻率系統得到表面聲波之一中心頻率塑應,以 情知該壓電材料之厚度;以及當該壓電材料到稍預設之 厚度,取出㈣電材料並結束該濕餘刻。 15 =明之應用在濕㈣—㈣材料之厚度即時監控裝 換^壓電材料之—第—表面具有至少—雙埠叉指狀 換此益,該厚度即時監控裝置係包括·: 一钱刻支據架,用 揸f"撐及口疋㈣電材料;一網路分析儀,與該對叉指狀 :二器相連,用以在祕刻進行時,同步監測由該叉指狀 換月b器所輸出之顧率· ν β 、,^及一濕蝕刻槽,其與該壓電材料 20595024 Description of the invention (The description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments, and the drawings). 1. The technical field to which the invention belongs. The present invention relates to an application in the wet # 刻Device and method for real-time monitoring of thickness of dust-electric materials, especially a device and method for real-time monitoring of thickness of wet-etched quartz film. I. Prior technology 15 20 Surface Acoustic Wave (SAW: Surface Acoustic Wave) components are mainly used to make wave and resonators. They are widely used in mobile phones, pagers, wireless phones, satellite communication systems, audio and video signal processing and security, and anti-theft. , TV frequency converter and other systems. In mobile communication systems, new developments are moving towards high operating frequencies, thinness, shortness, and ease of mass production. And because the operating frequency of the vibrator is inversely proportional to the thickness of the substrate, in order to achieve the operating frequency of f, the thickness of the substrate must be made thinner. Generally, thinner substrates are obtained through three techniques: wet, plasma, and mechanical grinding. Among them, the plasma etching control frequency is the most accurate, but the equipment is the most expensive; and mechanical grinding is limited by mechanical operations and cannot obtain all the high operating frequencies (such as the limit thickness of quartz thin film is about 33 Satoshi, obtained;: 50MHz) , And not easy to mass produce. In terms of the difficult-to-etch process = but the pure etch rate has a uniform relationship with temperature, concentration, time, and whether it is taught or not, so usually in the process of mass production, the etching depth is the time required for 2 etches; or in immersion In the case of engraved liquid—section engraving, it is impossible to accurately obtain: “It is quite inconvenient to take out the substrate” 7 25 595024 5,942, 1G0 “Crystal EtehMGn—” The quartz system is regarded as an electroplating system, one electrode is grounded, and the -electrode is connected to the -monitoring plate; because the quartz and the monitoring plate work simultaneously, the thickness of the quartz can be detected immediately. However, the limit of the monitoring frequency is about and in the entire etching system Only the single-quartz film can be used to measure the frequency. In the secret engraved towel, it can be accurately known that the pressed material_thick material is extremely complicated in the subsequent process and frequency control. ^^ ^ ±, ^ In the surface acoustic wave device of the eye, the piezoelectric material is in the range of several micrometers to hundreds of micrometers. Therefore, it is urgent to provide a method for measuring the micrometer-level piezoelectric material in the "residual liquid." The content of the invention is to provide—species钱 _ 电 材料 15 The thickness of the piezoelectric material thin film, without the need to move the piezoelectric material to the empty process toilet, -1 Duo /, easy to monitor the thickness and convenient operation, and follow-up costs: Frequency control has a better effect, and reduces the cost in mass production to increase the accuracy of the thickness of the piezoelectric material. Another aspect of the invention—thickness from μ 丄 20 thickness ”, # provides—a kind of thick carved piezoelectric material, here The characteristics of accurate measurement of piezoelectric materials in the wet time. This device has high accuracy, simple structure, and easy mass production. The main steps include: forming at least one pair of 4-digit finger transducers on a first surface of a piezoelectric material 8202; and connecting the interdigital transducer with a frequency-controlled system And immersing a second surface of the piezoelectric material opposite to the second surface of the interdigital transducer in a wet coin engraving solution, so that the piezoelectric material immersed in the engraving solution Start the rest; input a voltage from the frequency system to one of the fingers Energy generator, so that the material will be generated due to the piezoelectric effect-surface acoustic wave, and the surface acoustic wave is transmitted to another corresponding finger transducer, and the corresponding interdigital transducer receives the surface acoustic wave and Converted into electrical signals and output to the monitoring frequency system: obtaining a center frequency plasticity of a surface acoustic wave through the monitoring frequency system to know the thickness of the piezoelectric material; and when the piezoelectric material reaches a slightly preset thickness, Take out the plutonium material and end the wet remaining moment. 15 = Ming applied to wet plutonium-the thickness of the plutonium material for real-time monitoring and replacement ^ Piezoelectric material-the first surface has at least-dual port interdigitated replacement benefit, the thickness The real-time monitoring device includes: a money engraved data holder, with 揸 f " support and mouth electric materials; a network analyzer, connected to the pair of interdigitated fingers: two devices, used for the secret engraving , Simultaneously monitor the rate of output ν β, ^, and a wet etched groove, which is output by the interdigitated moon changer b, with the piezoelectric material 20

一相反於㈣電材料具該叉指狀換能器之第二表面相接 刻該壓電材料;其中,當該網路分析儀輸入一 2 J/、7 5亥又指狀換能器,該愿電材料會因壓電效應 表面聲波,該表面聲波會傳遞至另一相對應叉指狀 二^ :亥?曰狀換能器會將接收之表面聲波轉換為電訊 乂“ ’亚藉由該網路分析儀得到表面聲波之中心頻率響 應,偵知壓電材料之厚度。 9 595024 四、實施方式 ' 本發明中之濕蝕刻壓電材料之厚度即時 括一壓電材料、至少-雙淳在該壓電材料正向表=叉; 5狀換能器、-支撐及固定該壓電材料之姓刻支樓架、一與 該對又指狀換能器相連之監控頻率系統、以及一與壓電材 料背面相接觸濕蝕刻槽,其中壓電材料可包含石英、 LiNb03、LiTa03、PZT_8 A、或Zn〇,較佳為使用石英:此 乃因其具有性能穩定、便於加工、電阻率大與介電常數小 1〇等優m指狀換能器較佳是由銘金屬、經由黃光與蚀刻 步驟構成,該壓電材料之背面較佳為包含一蝕刻罩幕層, 以形成所需之壓電薄膜形狀;而監控頻率系統較佳為二網 路分析儀,其中該監控頻率系統可與多對叉指狀換能器相 連,利用監測轉換同時監控多個壓電薄膜厚度。 15 ⑨叉指狀換能器而言’其結構在許多::中均已有詳 細之說明,其主要分為兩種,一為電極條相互交又配置, 兩端由匯流條連在-起,如同二梳子錯差在一起,如圖4 戶:示。另一為一對對電極條相互交叉配置,兩端由匯流條 埂在一起,如圖5所示。在此兩種叉指狀換能器中,通常電 20極條寬度Η與電極條間距S均相同,且可產生同相位表面聲 波為主。刚者叉指狀換能器之電極條寬度與電極條間距通 常等於四分之-表面聲波之波長。後者又指狀換能器之電 極條寬度與電極條間距通常等於八分之一表面聲波之波 長。叉指狀換能器之叉指重疊長度w愈短會造成聲波繞 10 射丄愈長耦合愈強,但會造成諧振峰辦近鋸齒狀產生,故 I ¥叹计在30〜1〇〇倍波長間。叉指對數N方面,數目越多 輻射功,,所能接收的信號愈強,但受尺寸的限制, =目多寡仍有其限制。兩叉指狀換能器之聲波傳遞距離d :為波長的整數倍’但不可太近造成電磁饋通,亦不可太 遠造成傳遞之訊號無法接收。 在濕钱刻壓電材料餘刻完成後,更可包含一步驟用以 移除该對叉指狀換能器。在後續製程中,以產品需求再形 成其他尺寸或型態之電極於壓電材料之兩側。 為旎讓貴審查委員能更瞭解本發明之技術内容,特 牛應用於石英溥膜之較佳具體實施例,此乃由於目前使 用的[电相料中’石英具有高Q值㈣以办―㈣、高硬度 又易於取得,其說明如下。 又 右人仔到咼頻率之石英薄膜厚度流程如圖丨所示,包含在 一石英薄膜U0背面形成_鉻金屬層㈣,再魏—層金金 130,後者作為濕敍刻時之㈣罩幕層,前者為增加石 :薄膜110與金金屬層13〇之黏著力"妾著以黃光及蝕刻製 =在忒石央薄膜11〇背面形成一有圖樣之金屬層;在石英 4膜110正面讀_ 金屬層,再以黃光及㈣製程產生一 輸入,t狀換能态14〇樓一輸出又指狀換能器140b,叉指 狀換此态之圖形與特徵如前所詳述;將此對叉指狀換能器 與- HP8714ES之網路分析儀15〇相連接,並將石英薄膜! 1〇 支撐架支撐’使石英薄膜110背面浸入-NH4HF2 之濕餘刻液⑽中,使暴露純刻液16G的石英薄膜110進行 595024 蝕刻,如圖2所示;此時網路分析儀15〇輸入一交流電訊號 於輸入叉指狀換能器14〇a,該石英薄膜11〇會因壓電效應產 生一表面聲波,此表面聲波會傳遞至輸出叉指狀換能器 140b,該輸出叉指狀換能器14〇b會將接收之表面聲波轉換 為電訊號輸出,藉由網路分析儀15〇得到表面聲波之中心頻 率200如圖3a與圖3b所示,得知石英薄膜之即時厚度。 其中,在網路分析儀15〇方面,由於石英在液體中膜厚 與頻率之關係,如圖6所示,故在微米級之膜厚時,可利用 ίο 15 20 頻率推知膜厚,而在膜厚大於幾個表面聲波之波長時, 率幾乎為-常數,此乃由於石英薄膜所產生之表面聲波 僅旎在石英薄膜表面傳遞,對於較厚之石英薄膜,與其 面接觸之液體對頻率不具影響性;但當膜厚小於一個^ 聲波之波長時,頻率隨著膜厚變小而呈線性迅速變小二 石英薄膜開始進行㈣時,網路分析儀15()上會顯示 與***損失關係、圖,如圖3a所示,此時定義最高***^ =對應之頻率為中心頻率£1,當石英薄膜厚度漸漸: 到達理想厚度時’中心頻率會移動至目標值f2, ‘ 率到達如圖6所示之對應值’即可得知石英之即日二广 在本實施例中,所使用之又指狀換能器為予^A piezoelectric material is engraved with a second surface of the interdigital transducer opposite to a galvanic material; wherein, when the network analyzer inputs a 2 J /, 7 5 and 5 finger transducer, The electric wave material will cause a surface acoustic wave due to the piezoelectric effect, and the surface acoustic wave will be transmitted to another corresponding interdigital ^::? The shape transducer will convert the received surface acoustic wave into telecommunications. "'The center frequency response of the surface acoustic wave is obtained by the network analyzer, and the thickness of the piezoelectric material is detected. 9 595024 4. Embodiments' The present invention The thickness of the wet-etched piezoelectric material in the instant includes a piezoelectric material, at least-Shuangchun in the forward direction of the piezoelectric material = fork; 5-shaped transducer,-supporting and fixing the piezoelectric material engraved support Frame, a monitoring frequency system connected to the pair of finger transducers, and a wet etched groove in contact with the back of the piezoelectric material, wherein the piezoelectric material may include quartz, LiNb03, LiTa03, PZT_8 A, or Zn〇, Quartz is preferred: This is because it has excellent performance, stable processing, large resistivity, and a small dielectric constant of 10. The m-type finger transducer is preferably composed of metal, through yellow light and etching steps. The back surface of the piezoelectric material preferably includes an etching mask layer to form a desired piezoelectric film shape; and the monitoring frequency system is preferably a two-network analyzer, wherein the monitoring frequency system can be used with multiple pairs of interdigital fingers. Connected transducers, use monitoring It monitors the thickness of multiple piezoelectric films at the same time. 15 For the interdigitated transducer, its structure is described in many :: It is mainly divided into two types. One is that the electrode strips intersect and are configured. The two ends are connected together by bus bars, as if the two combs are staggered together, as shown in Figure 4. The other is a pair of opposite electrode bars arranged across each other, and the two ends are held together by bus bars, as shown in Figure 5. Shown. In these two types of interdigital transducers, the width of the electric 20-pole strip Η and the distance S between the electrode strips are usually the same, and can produce surface acoustic waves of the same phase. The electrodes of the rigid interdigital transducer The width of the stripe and the distance between the electrode strips are usually equal to one-fourth of the surface acoustic wave wavelength. The latter also refers to the width of the electrode strips and the distance between the electrode strips is usually equal to one-eighth the surface acoustic wave. The shorter the overlap length of the interdigital finger, the longer the sound wave will be around the 10th emission, and the stronger the coupling, but it will cause the resonance peak to be nearly jagged, so I ¥ sigma is between 30 and 100 times the wavelength. The interdigital logarithm N On the other hand, the more radiated work, the stronger the signal that can be received. The limit of the number of eyes still has its limit. The sound wave transmission distance d of the two-finger transducer is an integer multiple of the wavelength ', but it should not be too close to cause electromagnetic feedthrough or too far to cause the transmitted signal to be unreceivable. After the wet-money engraving of the piezoelectric material is completed, it may further include a step for removing the pair of interdigital transducers. In subsequent processes, other sizes or types of electrodes are formed in the piezoelectric according to product requirements. The two sides of the material. In order to make your reviewing committee better understand the technical content of the present invention, the special embodiment of the special quartz applied to the quartz film is because the currently used [electric phase materials' quartz has high Q The value is ㈣ ㈣, high hardness and easy to obtain, and its description is as follows. The thickness of the quartz film from the right figure to the 咼 frequency is shown in Figure 丨, which includes forming a _chrome metal layer ㈣ on the back of a quartz film U0, and then Wei-layer gold and gold 130, the latter as a mask layer for wet engraving, the former is to increase the stone: the adhesive force of the thin film 110 and the gold metal layer 13 ° " Holding with yellow light and etching = in Shi Shiyang A patterned metal is formed on the back of the film 11 ; Read the _ metal layer on the front of the quartz 4 film 110, and then generate an input with the yellow light and osmium process, the t-shaped transduction state, the 14th floor, the output and the finger transducer 140b, the interdigitated pattern and this state Features are as detailed previously; connect this pair of interdigital transducers to the HP8714ES Network Analyzer 150 and attach a quartz film! 10 Support frame support 'immerse the back of the quartz film 110 in the wet etching solution of -NH4HF2, and etch the 595024 of the quartz film 110 exposed to the pure etching solution 16G, as shown in Figure 2; at this time, the network analyzer 15 An AC signal is input to the interdigital transducer 14a. The quartz film 110 generates a surface acoustic wave due to the piezoelectric effect. This surface acoustic wave is transmitted to the output interdigital transducer 140b. The output interdigital transducer The shape transducer 14b will convert the received surface acoustic wave into an electrical signal output, and the center frequency 200 of the surface acoustic wave is obtained by the network analyzer 15. As shown in Fig. 3a and Fig. 3b, the real-time thickness of the quartz film is obtained. . Among them, in the network analyzer 15o, because the relationship between the film thickness and the frequency of quartz in the liquid, as shown in Figure 6, when the film thickness in the micron range, you can use the frequency 1515 to infer the film thickness, and When the film thickness is greater than the wavelength of several surface acoustic waves, the rate is almost constant. This is because the surface acoustic waves generated by the quartz film are transmitted only on the surface of the quartz film. For thicker quartz films, the liquid in contact with the surface has no frequency. Influence; but when the film thickness is less than a wavelength of ^ sound waves, the frequency linearly decreases as the film thickness becomes smaller. When the quartz film starts to ㈣, the network analyzer 15 () will show the relationship with the insertion loss The figure is shown in Figure 3a. At this time, the highest insertion ^ = is defined as the center frequency of £ 1. When the thickness of the quartz film is gradually: When the ideal thickness is reached, the 'center frequency will move to the target value f2, and the rate reaches as shown in the figure. Corresponding value shown in 6 'can be used to know that the quartz is currently in use. In this embodiment, the finger-shaped transducer used is ^

:相=交叉配置,兩端由匯流條連在—起,^ 中苓數尺寸如下表所示: 斤不1: Phase = cross configuration, the two ends are connected together by bus bars, ^ Zhongling number size is shown in the following table: 斤 不 1

12 595024 32〇〇μηι 9〇~ 又指長度(L) 鲜·塾面積 在製作表面聲波元件味 高顏> & μ I 、丨、、、蝕刻為關鐽之技術。對於 員之石央共振器,其基本之頻率rF1入 間。_ _ _ _ μ // 域㈣8GMHz至1 GHz η,其會影響到後續製程與頻率控制。今曰多數之餘 嘖專利处裎租,^ 、缺乏即日守置測方法。而本申 明專利此獒供一即時監測系 簡單、與易於量產的特點。/、備有-精準度、架構 上述貝施例僅係為了方便說明而舉例而已,本發明所 ;=:Γ應以申請專利範圍所述為準,而非僅限 五、圖式簡單說明 圖1係本發明一較佳實施例之萝作古 15 圖 κ 作回頻石央溥膜動作流程 圖2係本發明-較佳實施例之濕钱刻壓電材料之 監控裝置示意圖。 又Ρ 4 顯示 t 圖3a與圖3b係本發明一較佳實施例之網路分析儀上所 之頻率與***損失關係圖。 20圖4係本發明一較佳實施例之叉指狀換能器正視圖。 13 595024 圖5係本發明另一較佳實施例之叉指狀換能器正視圖。 圖6係本發明中石英薄膜在液體中膜厚與頻率之關係圖。 5 六、圖號說明 110石英薄膜 120 鉻金屬層 Π0金金屬層 140a輸入叉指狀換140b輸出叉指狀換150網路分析儀 能器 能器 160钱刻液 200 中心頻率12 595024 32〇〇μηι 9〇 ~ Also refers to the length (L) area of fresh and scallion. In the production of surface acoustic wave elements, the taste is high. &Amp; μ I, 丨 ,, and etching are the key technologies. For the member's Shiyang resonator, its basic frequency is rF1. _ _ _ _ μ // Domain ㈣ 8GMHz to 1 GHz η, which will affect subsequent processes and frequency control. Today, most of the time, the patent office rents, ^, lack of the same-day monitoring method. However, the patent in this application provides the features of a real-time monitoring system that is simple and easy to mass-produce. / 、 Has-accuracy and structure The above examples are just examples for the convenience of description. The present invention; =: Γ should be based on the scope of patent application, not limited to five. 1 is a flow chart of Luo Zuogu 15 which is a preferred embodiment of the present invention. Figure κ is a flow chart of the operation of a frequency-returning stone central diaphragm film. Fig. 3a and Fig. 3b are diagrams showing the relationship between frequency and insertion loss on a network analyzer according to a preferred embodiment of the present invention. 20 FIG. 4 is a front view of an interdigital transducer according to a preferred embodiment of the present invention. 13 595024 Figure 5 is a front view of an interdigital transducer according to another preferred embodiment of the present invention. FIG. 6 is a graph showing the relationship between film thickness and frequency of a quartz thin film in a liquid according to the present invention. 5 VI. Explanation of Drawing Numbers 110 Quartz Film 120 Chromium Metal Layer Π0 Gold Metal Layer 140a Input Interdigital Change 140b Output Interdigital Change 150 Network Analyzer Function Device 160 Money Engraving Liquid 200 Center Frequency

1414

Claims (1)

3.如申請專利範圍第2項所述之濕姓刻磨電材料 二即時監控方法,其更包含步⑽先於該麼電材 : 金屬層後’再於該金屬層表面形成有圖樣之蝕刻 二’該金屬層係介於該蝕刻罩幕層與該壓電材料之間,、 θ加该蝕刻罩幕層與該壓電材料間之黏著力。 以 度即:二利【了1項所述之濕㈣壓電材料之厚 属思其中該叉指狀換能器是先沈積—導泰厶 a,再以黃光及蝕刻製程形成相互交叉配置之電極 度即:二IS利t第1項所述之濕·電材料之厚 U方法,纟中該又指狀換能器之形狀為電極條相 又配置,且該電極條兩端由—匯流條相連接。 度即利範圍第5項所述之濕姓刻壓電材料之厚 15 極條連;:Γ,其中每一叉指狀換能器之至少兩相鄰電 、連接至一相同之匯流條。 户g二如申請專利範圍第1項所述之濕蝕刻壓電材料之厂0 :::監控方法’其中該又指狀換能—‘:: 度即:二::專,範圍第1項所述之濕姓刻壓電材料之厚 20 其中該叉指狀換能器之電極條寬卢鱼π 極條間之間距相同。 怍見度與電 度即:二:二專:::第1項所述之糊壓咖 極停二 纟中該叉指狀換能器之電極條寬度盘電 心卞間之間距係產生同相位之聲波。 /、电 16 10·如申請專利範圍第5項所述之濕蝕刻壓電材料之 厚度即時監控方法,其中該叉指狀換能器之電極條寬度與 電極條間之間距等於四分之一表面聲波之波長。 Π·如申請專利範圍第6項所述之濕蝕刻壓電材料之 厚度即時監控方法,其中該叉指狀換能器之電極條寬度與 電極條間之間距等於八分之一表面聲波之波長。 〃 12·如申請專利範圍第1項所述之濕蝕刻壓電材料之 厚度即時監控方法,其中該二叉指狀換能器之聲波傳遞最 短距離為波長的整數倍。 曰13·如申請專利範圍第1項所述之濕蝕刻壓電材料之 厚度即時監控方法,其中該二叉指狀換能器之叉指重疊 度係介於30至1〇〇倍波長。 Κ Μ請專利範圍第丨項所述之㈣㈣電材料之 予-即時監控方法,其中該壓電材料為石英、咖吣、 UTa〇3、PZT-8A、或 Zn〇。 3、 ο 裡應用在濕蝕刻壓電 番甘丄 何料之厚度即時監控萝 置’其中該壓電材料之一第一表 ^ 能器,該厚度即時監控裝置係包括:^ 又才日狀換 —蝕刻支撐架,用以支撐及固定該遷電材料; 一網路分拚借 姓刻進行時,同^與該對叉指狀換能器相連,用以在濕 以及 V滅測由該叉指狀換能器所輸出之頻率; 該叉::之:與:壓電材料-相反於該壓電材料具 盆中者 弟一表面相接觸,用以蝕刻該壓電材料; 換能器,該析儀輸入—電壓於其中-該叉指狀 面聲波會傳遞至ΓΓ壓電效應產生一表面聲波,該表 器會將接收之夺^對應又指狀換能器,該叉指狀換能 分析儀得到表面二波:換為電訊號輸出,並藉由該網路 度。 耳波之中心頻率響應,偵知壓電材料之厚 17 * 15 申明專利範圍第16項所述之濕蝕刻壓電材料 及:控裂置,其中該又指狀換能器是為-以黃光 ^ ^生出相互交叉配置之導電金屬層電極條。 •如申請專利範圍第16項所述之濕蝕刻壓電材料 旱二即時監控裝置,其中該叉指狀換能器是由鋁組成。 19.如申請專利範圍第16項所述之濕蝕刻壓電材料 I度即時監控裝置,其中該壓電材料為石英、UNb〇、 LlTa〇3、PZT-8A、或⑽。 3 20 2 〇 曰·如申請專利範圍第16項所述之濕蝕刻壓電材料 時監控裝置,其中該叉指狀換能器之形狀為電極 、互乂又配置,且該電極條兩端由一匯流條相連接。 18 b 21·如申請專利範圍第2〇項所述之濕蝕刻壓電材料 :厚度即時監控裝置,纟中每一叉指狀換能器之至少兩相 郇屯極條連接至一相同之匯流條。 11 ·如申清專利範圍第16項所述之濕蝕刻壓電材料 厚度即日可監控裝置,其中該叉指狀換能器之電極條寬产 與電極條間之間距相同。 又 日23·如申請專利範圍第22項所述之濕蝕刻壓電材料 s厚度即日守監控裝置,其中該叉指狀換能器之電極條寬度 與電極條間之間距係產生同相位之聲波。 、、又 103. The method for real-time monitoring of wet electrical materials engraved as described in item 2 of the scope of the patent application, further comprising the step of: before the electrical material: metal layer, and then the patterned etched surface is formed on the surface of the metal layer. 'The metal layer is interposed between the etching mask layer and the piezoelectric material, θ plus the adhesion between the etching mask layer and the piezoelectric material. In terms of degrees: Erli [the thickness of the wet piezoelectric material described in item 1 is thought, in which the interdigital transducer is first deposited-conductive Thai a, and then formed in a cross configuration with yellow light and etching process The electrode degree is the thickness U method of the wet and electrical material described in Item 1 of the two IS Lit. In the figure, the shape of the finger-shaped transducer is arranged in the electrode strip phase, and the two ends of the electrode strip are formed by- The bus bars are connected. The 15-pole thickness of the piezoelectric material engraved with a wet name as described in item 5 of the scope of interest: Γ, wherein at least two adjacent electrical elements of each interdigital transducer are connected to an identical bus bar. User g2 The wet-etched piezoelectric material factory described in item 1 of the scope of patent application 0 :: Monitoring method 'where this should also be finger-shaped transduction —' :: degrees ie: two :: special, scope item 1 The thickness of the wet piezoelectric engraved piezoelectric material is 20, wherein the electrode strips of the interdigital transducer have the same distance between the electrodes.怍 Visibility and electrical energy are: two: two special :::: The electrode bar width of the interdigitated transducer in the second embodiment of the paste pressure coffee pole stop second 纟 the distance between the electric core 产生Phase sound wave. / 、 Electric 16 10 · The method for real-time monitoring of the thickness of a wet-etched piezoelectric material as described in item 5 of the scope of patent application, wherein the width of the electrode strip of the interdigital transducer and the distance between the electrode strips are equal to one quarter The wavelength of surface acoustic waves. Π · The method for real-time monitoring of the thickness of a wet-etched piezoelectric material as described in item 6 of the scope of the patent application, wherein the electrode strip width of the interdigital transducer and the distance between the electrode strips are equal to one eighth of the surface acoustic wave wavelength . 〃 12. The method for real-time monitoring of the thickness of a wet-etched piezoelectric material as described in item 1 of the scope of patent application, wherein the shortest distance of the acoustic wave transmission of the binary finger transducer is an integer multiple of the wavelength. 13. The method for real-time monitoring of the thickness of a wet-etched piezoelectric material as described in item 1 of the scope of the patent application, wherein the interdigit overlap of the binary finger transducer is between 30 and 100 times the wavelength. KM asks for the pre-immediate monitoring method of the electro-optical material described in the item 丨 of the patent, wherein the piezoelectric material is quartz, coffee, UTaO3, PZT-8A, or ZnO. 3, ο is used in wet etching of piezoelectric panganyu material thickness real-time monitoring, one of the piezoelectric material is the first meter ^ energy, the thickness real-time monitoring device includes: — An etched support frame is used to support and fix the power transfer material. When a network is divided and borrowed by the surname, it is connected to the pair of interdigitated transducers for wet and V detection by the fork. The frequency output by a finger transducer; the fork :: of: and: piezoelectric material-opposite to a surface of the piezoelectric material in the pot to etch the piezoelectric material; the transducer, The analyzer input—voltage is in it—the interdigital acoustic wave will be transmitted to the ΓΓ piezoelectric effect to generate a surface acoustic wave. The meter will receive the corresponding ^ finger transducer and the interdigital transducer. The analyzer obtains the second surface wave: it is switched to the electric signal output, and the network degree is used. The center frequency response of the ear wave, the thickness of the piezoelectric material is detected 17 * 15 The wet-etched piezoelectric material described in item 16 of the patent scope and: Controlled cracking, where the finger-shaped transducer is-to yellow The light ^ ^ produces a conductive metal layer electrode strip arranged in a cross configuration. • The wet-etched piezoelectric material described in item 16 of the scope of patent application, the instantaneous monitoring device for drought, wherein the interdigital transducer is composed of aluminum. 19. The wet-etched piezoelectric material I-degree real-time monitoring device according to item 16 of the scope of application for a patent, wherein the piezoelectric material is quartz, UNb0, L1Ta03, PZT-8A, or thorium. 3 20 2 The monitoring device for the wet etching of piezoelectric materials as described in the 16th aspect of the application for a patent, wherein the shape of the interdigital transducer is an electrode, which is mutually arranged, and both ends of the electrode strip are formed by A bus bar is connected. 18 b 21 · Wet etched piezoelectric material as described in item 20 of the scope of patent application: thickness real-time monitoring device, at least two phases of each interdigitated transducer in the frame are connected to an identical bus bar article. 11 · The wet-etched piezoelectric material thickness monitoring device according to item 16 of the scope of the patent application, wherein the width of the electrode strip of the interdigital transducer and the distance between the electrode strips are the same. On the 23rd, the thickness of the wet-etched piezoelectric material s as described in item 22 of the scope of the patent application, ie, the monitoring device, wherein the width of the electrode strip of the interdigital transducer and the distance between the electrode strips generate sound waves of the same phase . ,, and 10 24.如申睛專利範圍第2〇項所述之濕蝕刻壓電材料 度即時監控裝置,其中該叉指狀換能器之電極條寬度 人包極條間之間距等於四分之一表面聲波之波長。 如申請專利範圍第21項所述之濕蝕刻壓電材料 s厚度即時監控裝置,其中該叉指狀換能器之電極條寬度 一電極條間之間距等於八分之一表面聲波之波長。24. The wet-etched piezoelectric material instant monitoring device as described in item 20 of Shenyan's patent scope, wherein the electrode strip width of the interdigitated transducer is equal to a quarter of the surface acoustic wave Of the wavelength. The wet-etched piezoelectric material s-thickness real-time monitoring device according to item 21 of the scope of the patent application, wherein the width of the electrode strips of the interdigital transducer and the distance between the electrode strips are equal to one-eighth of the surface acoustic wave wavelength. •如申睛專利範圍第16項所述之濕钱刻壓電材料 ^厚度即時監控裝置,其中該二叉指狀換能器之聲波傳遞 表短距離為該表面聲波波長的整數倍。 20 •如申睛專利範圍第16項所述之濕钱刻壓電材料 之厚度即時監控裝置,其中該二叉指狀換能器之叉指 長度為30〜100倍波長。 且 ^ Q _如申睛專利範圍第16項所述之濕姓刻壓電材料 度即時監控裝置,其更包含一蝕刻罩幕層於該壓電材 料背面。 19 25• The wet money engraved piezoelectric material as described in item 16 of Shenjing's patent scope ^ thickness real-time monitoring device, wherein the short distance of the acoustic wave transmission table of the binary finger transducer is an integer multiple of the surface acoustic wave wavelength. 20 • The device for real-time monitoring of the thickness of a wet-money engraved piezoelectric material as described in item 16 of the Shenyan patent scope, wherein the interdigit length of the binary finger transducer is 30 to 100 times the wavelength. Moreover, the real-time monitoring device for piezoelectric material engraved with wet last name as described in item 16 of Shenyan's patent scope further includes an etching mask layer on the back of the piezoelectric material. 19 25
TW92112485A 2003-05-07 2003-05-07 Method for real-time monitoring the thickness of a piezoelectric membrane during wet etching TW595024B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452644B (en) * 2011-05-17 2014-09-11 Univ Nat Yunlin Sci & Tech Method and apparatus for measuring etching depth
TWI742860B (en) * 2019-09-18 2021-10-11 法商佛雷克恩股份有限公司 Transducer structure for an acoustic wave device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452644B (en) * 2011-05-17 2014-09-11 Univ Nat Yunlin Sci & Tech Method and apparatus for measuring etching depth
TWI742860B (en) * 2019-09-18 2021-10-11 法商佛雷克恩股份有限公司 Transducer structure for an acoustic wave device

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