TW594014B

TW594014B - Silicon-type dual inertia sensor

Info

Publication number: TW594014B
Application number: TW92108160A
Authority: TW
Inventors: Shiu-Mou Chen; Shiau-Shi Tzuo; Tzung-Da Gau
Original assignee: Chung Shan Inst Of Science
Priority date: 2003-04-09
Filing date: 2003-04-09
Publication date: 2004-06-21
Also published as: TW200420884A

Abstract

The present invention is related to the dual inertia sensor manufactured by using (110) silicon wafer. In the invention, at least one inertia mass block is manufactured by using a silicon wafer. Each mass block is connected with the inner frame through the use of one sensing beam set so as to make the mass block capable of moving in the direction perpendicular to the wafer surface (z-axis). Each inner frame is connected with the outer frame or the fixing anchor through one driving beam set so as to make the inner frame capable of moving along one direction (y-axis) parallel to the silicon wafer surface. Each inner frame is oscillated along y-axial direction through the use of one driver set so as to drive the mass block and make it oscillate along the y-axial direction. If one angular speed is inputted along the X-axis direction, Coriolis force is generated to make each mass block oscillate along the z-axis direction. If acceleration is inputted along the z-axis direction, the inertia force makes the mass block generate a movement. By using the signal processing technique, the angular speed and acceleration signals can be separated. In addition, by using the vertical etching characteristic of (110) silicon wafer to manufacture the driving beam, the resonance frequency of the driving axis can be precisely controlled so as to increase the process success rate and sensing performance of angular speed.

Description

594014 _案號 92108160_年月日_魅_ 五、發明說明（2) X -軸向有一轉動角速度Ω ，則將產生一柯氏力F使其質量塊3沿z-軸向振動，量測質量塊3沿z-軸向振動振幅即可得知轉動角速度；若沿z -轴向亦輸入一加速度時，因慣性力亦將使質量塊3相對於内框架5產生一位移，量測質量塊3 沿z-軸向之位移量即可得知加速度。當質量塊3位移時，594014 _Case No. 92108160_ 年月日 _Character_ V. Description of the invention (2) X-axis has a rotational angular velocity Ω, and a Coriolis force F will be generated to cause the mass 3 to vibrate along the z-axis. Measure The rotational angular velocity can be obtained from the vibration amplitude of the mass 3 along the z-axis; if an acceleration is also input along the z-axis, the mass 3 will also be displaced relative to the inner frame 5 due to the inertial force, and the mass is measured. The displacement of block 3 along the z-axis can get the acceleration. When mass 3 is displaced,

其與二玻璃平板7 1、72上之金屬薄膜電極板9 所形成之二感測用電容器因間距改變而使電容值改變，兩者之改變值相反，故量測兩個感測電容器之電容值差值即可得知質量塊3位移量。由角速度所產生之輸出信號為交流信號，由加速度所產生之輸出信號為低頻或直流信號，故利用信號處理技術可分離出角速度及加速度信號。It is different from the two sensing capacitors formed by the metal thin film electrode plates 9 on the two glass flat plates 7 1 and 72 due to the change in the distance between the two capacitors. The two capacitors have opposite values, so the capacitance of the two sensing capacitors is measured. The difference can be used to know the displacement of the mass 3. The output signal generated by the angular velocity is an AC signal, and the output signal generated by the acceleration is a low-frequency or DC signal. Therefore, the angular velocity and acceleration signals can be separated by using signal processing technology.

上述各（内框架5 +感測彈性支樓樑4 +質量塊3 )與其驅動彈性支撐樑6各自形成一組y -軸向π質量塊-彈簧振動系統’’；同理，各質量塊3與其感測彈性支撐樑4各自形成一組ζ -軸向”質量塊-彈簧振動系統π 。由於驅動電容器所提供的驅動力直接產生的振幅甚小，故一般均是利用振動系統之共振效應以放大振幅。放大倍率Q與操作頻率及阻尼係數有關，若驅動電容器之操作頻率愈接近振動系統之共振頻率，則放大倍率愈大。同理，柯氏力所產生之振幅亦必須利用共振效應放大。因為柯氏力產生之振動頻率與驅動力之頻率一致，故感測軸向之共振頻率應與驅動軸向之共振頻率一致，才能產生足夠大的輸出信號；或為響應頻寬之考量，兩者之共振頻率故意設計略有差異，但差值必須維持一定值。上述習知以（1 0 0 )矽晶片1蝕刻製作之雙慣性感測器在Each of the above (inner frame 5 + sensing elastic supporting beam 4 + mass 3) and its driving elastic supporting beam 6 each form a set of y-axial π mass-spring vibration system ''; similarly, each mass 3 Instead of sensing the elastic supporting beams 4 each form a group of ζ-axial "mass-spring vibration system π. Because the driving force provided by the driving capacitor directly generates a small amplitude, the resonance effect of the vibration system is generally used to Amplify the amplitude. The magnification Q is related to the operating frequency and damping coefficient. If the operating frequency of the driving capacitor is closer to the resonance frequency of the vibration system, the magnification will be larger. Similarly, the amplitude generated by the Coriolis force must also be amplified by the resonance effect. .Because the vibration frequency generated by Coriolis force is consistent with the frequency of the driving force, the resonance frequency of the sensing axis should be consistent with the resonance frequency of the driving axis in order to generate a sufficiently large output signal; or for the consideration of response bandwidth, The resonance frequency of the two is intentionally designed to be slightly different, but the difference must be maintained at a certain value. The above-mentioned conventional dual inertial sensor manufactured by (100) silicon wafer 1 etching is used in

第6頁 594014 案號 92108160 年月曰修正五、發明說明（3)Page 6 594014 Case No. 92108160 Date of Amendment V. Description of Invention (3)

製程上有一缺點，問題在於驅動彈性支撐樑6之製作，其程序如第二圖，首先由矽晶片1之正面及背面同時進行蝕刻，由於矽晶濕式蝕刻速率與晶格方向有關，沿< 1 1 1 > 方向之蝕刻速率最慢，幾乎不能蝕刻，故初期蝕刻結果如第二圖（a)之橫切面圖所示，其斜線為（1 1 1 )面，若繼續蝕刻，則將由上下兩（1 1 1 )面交會處往< 1 1 0 >方向繼續蝕刻，如第二圖（b )，第二圖（c )〜第二圖（e )則分別為由驅動彈性支撐樑兩邊蝕刻至接近完成前後之側面形狀，當蝕刻至垂直時將矽晶片1由蝕刻溶液中取出停止蝕刻。但因缺少像（1 1 1 )晶面之自動停止蝕刻機制，故何時該停止蝕刻完全憑經驗，以蝕刻時間、或以目視法決定，振動樑之寬度將難以精確掌握；因振動樑之寬度影響振動樑之彈性係數，即影響振動系統之共振頻率，若驅動彈性支撐樑6 之寬度不準，將使驅動軸向之共振頻率與感測軸向之共振頻率不一致，或使兩者之差值偏離原設計值。而放大倍率 Q值愈大之振動系統，所能容忍之頻率偏離值愈小，因此每次製作之產品之性能重複性、甚或成功率將大受影響。本發明乃針對上述缺失進行改進。 1發明内容】There is a disadvantage in the manufacturing process. The problem lies in the production of the driving elastic support beam 6. The procedure is as shown in the second figure. First, the front and back of the silicon wafer 1 are etched simultaneously. Since the wet etching rate of the silicon crystal is related to the lattice direction, it follows ; 1 1 1 > The etching rate in the direction is the slowest and can hardly be etched, so the initial etching result is shown in the cross-sectional view of the second figure (a). The oblique line is the (1 1 1) plane. If the etching continues, then The etching will continue from the intersection of the upper and lower (1 1 1) faces in the direction of < 1 1 0 >, as shown in the second picture (b), the second picture (c) ~ the second picture (e) are driven by elasticity, respectively. The two sides of the support beam are etched to the side shape before and after the completion. When the etch is vertical, the silicon wafer 1 is taken out of the etching solution to stop etching. However, due to the lack of an automatic stop etching mechanism like the (1 1 1) crystal plane, when to stop etching is completely determined by experience, and the etching time or visual method is used to determine the width of the vibrating beam. Affects the elastic coefficient of the vibration beam, that is, the resonance frequency of the vibration system. If the width of the driving elastic support beam 6 is inaccurate, the resonance frequency in the driving axis and the resonance frequency in the sensing axis will be inconsistent, or the difference between the two will be made. The value deviates from the original design value. The larger the magnification Q value of the vibration system, the smaller the frequency deviation value that can be tolerated. Therefore, the performance repeatability and even the success rate of each product will be greatly affected. The present invention is made to improve the above-mentioned defects. 1 Summary of the invention

本發明之主要特徵在於：1.採用（1 1 0 )矽晶片蝕刻製作雙慣性感測器，利用（1 1 〇 )矽晶片之垂直深蝕刻特性，可精確控制驅動彈性支撐樑之寬度，及驅動共振頻率，提昇製程成功率及角速度感測性能；2.(1 1 0 )矽晶質量塊之降低空氣阻力設計，提昇感測軸向之共振放大率；3 ·防止The main features of the present invention are: 1. The dual inertial sensor is fabricated by (1 1 0) silicon wafer etching, and the vertical deep etching characteristics of the (1 10) silicon wafer can be used to precisely control the width of the driving elastic support beam, and Drive the resonance frequency to improve the process success rate and angular velocity sensing performance; 2. (1 1 0) silicon air mass design to reduce the air resistance to improve the resonance amplification of the sensing axis; 3 · Prevent

第7頁 594014Page 7 594014

案號 921081fU) 五、發明說明（4) 質量塊與玻璃片沾粘設計；4·内桐以上认電㈣，置於晶片内不受慣性響二= !測晶片之實際溫度改補償雙慣性感測器之以接為期能對本發明之目的、功、土確的瞭：=可行實施例並配U明::更詳盡明慣性器==圖三圖其巧：可^ 長方形；實際上各組成元：之：=开;行：非第-圖之 {卜卜1}或{1-11}平面與（110) = ^矽晶晶格之之夾角皆為1 0 9 · 4 8。或7 0 5 2。日日拚钿&父線，任二邊 nni ϋ> ^ ^nim τ ;夕日日片之{ 1 一1 一 1丨及U - 1 1 }兩組 Λ面相互垂直，而一般以*氧化卸 (Κ0Η)或乙烯_胺吡咯卡特醇（Ethylene Diamine(Case No. 921081fU) V. Description of the invention (4) The mass block is attached to the glass sheet; 4. The electric block is recognized above the inner Tong, and it is not affected by the inertia when it is placed in the chip. The tester is expected to be able to confirm the purpose, work, and soil of the present invention: = feasible embodiment with U Ming :: more detailed Ming Inertial = = Figure 3 Figure coincidence: can be ^ rectangular; actually each composition Yuan: Zhi: = On; Row: The angle between the non-pictured {卜卜 1} or {1-11} plane and the (110) = ^ silicon crystal lattice is 1 0 9 · 4 8. Or 7 0 5 2. Day and day spelling & parent line, any two sides nni ϋ > ^ ^ nim τ; {1 1 1 1 1 丨 and U-1 1} of the eve of the sun and the two sets of Λ planes are perpendicular to each other, and are generally unloaded with * oxidation (Κ0Η) or Ethylene Diamine

Pyrochatechol ;EDP)溶液蝕刻矽晶片時，1 ，的蝕刻速率相較於U00}或丨11〇}等其他平面的蝕刻速率 k 了甚多’接近不能蝕刻；故蝕刻時保護罩沿丨丨—丨—丨}或 {1 11}平面與（110)石夕晶圓表面之交線對準即可#刻出垂直面。本實施例中包含外框架2、外框架2内包含一個内框架5、内框架5内包含一慣性質量塊3，質量塊3以至少一個感測彈性支撐樑（以下或簡稱為感測樑）4銜接於内框架5，内框架5以至少一個驅動彈性支撐樑（以下或簡稱為驅動襟）6銜接於外框架2 ;其中感測樑4使質量塊3較易於沿垂直於石夕晶片11表面方向（定義為2 一軸向）運動，驅動彈性支Pyrochatechol (EDP) solution when etching silicon wafers, the etching rate of 1 is much higher than the etching rate of other planes such as U00} or 丨 11}, which is close to not being able to etch; therefore, the protective cover is etched during the etching. — 丨} or {1 11} plane is aligned with the intersection of the (110) Shixi wafer surface to #etch the vertical plane. This embodiment includes an outer frame 2, an inner frame 5 in the outer frame 2, and an inertial mass 3 in the inner frame 5. The mass 3 supports at least one sensing elastic support beam (hereinafter referred to as a sensing beam). 4 is connected to the inner frame 5, and the inner frame 5 is connected to the outer frame 2 with at least one driving elastic supporting beam (hereinafter referred to as a driving lapel) 6; wherein the sensing beam 4 makes the mass 3 easier to be perpendicular to the stone chip 11 Surface direction (defined as 2 uniaxial) movement, driving elastic support

594014 _案號 92108160_年月日__ 五、發明說明（5) 撐樑6使内框架5較易於沿平行於矽晶片1 1表面之一方向 (定義為y_轴向）運動；另二片玻璃平板71 、72(未顯示於第三圖）分別置於矽晶片1 1之正面、背面，並與矽晶外框架2結合在一起，玻璃平板71、72面對矽晶片1 1之表面、對應内框架5之二對邊51、52處鍍上金屬薄膜電極板81、594014 _Case No. 92108160_year month__ V. Description of the invention (5) The supporting beam 6 makes it easier for the inner frame 5 to move in one direction (defined as the y_axis) parallel to the surface of the silicon wafer 11; the other two Glass plates 71 and 72 (not shown in the third figure) are respectively placed on the front and back of the silicon wafer 1 1 and combined with the silicon outer frame 2, and the glass plates 71 and 72 face the surface of the silicon wafer 11 1. , Corresponding to the two opposite sides 51 and 52 of the inner frame 5 are plated with a metal thin film electrode plate 81,

82，與内框架5之表面形成邊緣效應靜電驅動電容器（以下或簡稱驅動器），對應質量塊3處亦分別鍍上金屬薄膜電極板9，與質量塊3之表面形成兩個感測用電容器（以下或簡稱感測器）。當驅動器輸入反向交流驅動電壓，將產生靜電驅動力使内框架5及其質量塊3沿y -軸向振動，此時若沿 X-軸向有一轉動角速度Ω ，則將產生一柯氏力F使其質量塊3沿Z-軸向振動，量測質量塊3沿Z-軸向振動振幅即可得知轉動角速度；若沿z -軸向亦輸入一加速度時，因慣性力亦將使質量塊3相對於内框架5產生一位移，量測質量塊3 沿z-軸向之位移量即可得知加速度。當質量塊3位移或振動時，其與玻璃平板71、72上之金屬薄膜電極板9所形成之二感測用電容器因間距改變而使電容值改變，兩者之改變值相反，故量測兩組感測電容器之電容值差值，即可得知質量塊3位移或振動量。由角速度所產生之輸出信號為交流信號，由加速度所產生之輸出信號為直流或低頻信號，故利用信號處理技術可分離出角速度及加速度信號。82. An edge-effect electrostatic drive capacitor (hereinafter referred to as a driver) is formed on the surface of the inner frame 5. Corresponding masses 3 are also plated with metal thin film electrode plates 9, respectively, and two sensing capacitors are formed on the surface of the mass 3 ( Hereinafter or referred to as the sensor). When the driver inputs reverse AC driving voltage, it will generate electrostatic driving force to cause the inner frame 5 and its mass 3 to vibrate along the y-axis. At this time, if there is a rotational angular velocity Ω along the X-axis, a Coriolis force will be generated. F makes its mass 3 vibrate along the Z-axis, and the angular velocity of rotation can be obtained by measuring the vibration amplitude of the mass 3 along the Z-axis; if an acceleration is also input along the z-axis, the inertial force will also cause The mass 3 generates a displacement relative to the inner frame 5, and the acceleration can be obtained by measuring the displacement of the mass 3 in the z-axis direction. When the mass 3 is displaced or vibrated, the capacitance between the sensing capacitor and the metal thin-film electrode plate 9 on the glass flat plates 71 and 72 changes due to the change in the distance between the capacitors. The change of the two values is opposite, so it is measured. The difference between the capacitance values of the two sets of sensing capacitors can be used to know the displacement or vibration of the mass 3. The output signal generated by the angular velocity is an AC signal, and the output signal generated by the acceleration is a DC or low frequency signal. Therefore, the angular velocity and acceleration signals can be separated by using signal processing technology.

本實施例中之感測樑4可利用p+層之自動停止蝕刻特性精密控制其厚度；而驅動樑6因已平行於{ 1 - 1 - 1 }或 { 1 - 1 1 }平面與（1 1 0 )矽晶片1 1表面之交線，其兩側面即為 { 1 1 1 }平面，故亦具自動停止蝕刻特性，其寬度亦可獲得In this embodiment, the thickness of the sensing beam 4 can be precisely controlled by using the automatic stop etching characteristic of the p + layer; and the driving beam 6 is parallel to the {1-1-1} or {1-1 1} plane and (1 1 0) The intersection of the 1 1 surface of the silicon wafer, the two sides of which are {1 1 1} planes, so it also has automatic stop etching characteristics, and its width can also be obtained

第9頁 594014 _案號92108160_年月日_jfi_ 五、發明說明（6) 精密控制；因此，驅動振動系統及感測振動系統兩者之共振頻率差異值可獲有效精確控制。上述電容器邊緣效應靜電驅動器之驅動力與電容器長度成正比，為增強驅動力，必須增加有效邊緣長度，驅動器可設計成複合式，如第四a圖之上視圖所示：將内框架之二對邊5 1 ’、5 2 ’加寬，並由兩面蝕刻數個長條狀之凹槽甚或蝕穿5 t，形成兩個驅動器本體5 1 ’、5 2 ’，每個長形凹槽或長形孔5t可提供兩個邊緣效應驅動器。玻璃平板71、 7 2面對矽晶片1 1之表面、對應驅動器本體5 Γ表面各含有兩組相互交錯且平行於長形凹槽或長形孔5 t之長形電極 8 1、8 2，並分別連接至接線板8 1 p、8 1 η，如第四b圖；驅動器本體51’表面之長形凹槽或長形孔5t與其對應之長形電極8 1、8 2之相關位置如第四c圖之橫截面圖所示，故形成兩組驅動電容器。同理，玻璃平板7 1 、7 2面對矽晶片1 1 之表面、對應驅動器本體52’表面亦含有兩組相互交錯且平行於長形凹槽5t之長形電極81、82，並分別連接至之接線板8 2ρ、8 2η，驅動器本體52’表面與其對應之長形電極組81、82亦形成另兩組驅動電容器。適當調配各驅動電容器外加交流電壓之相位，使各驅動器之出力方向一致，故驅動力可增加數倍。各驅動電容器亦可用於量測驅動振幅並回授，以控制驅動振幅。【實施方式】本發明之較佳實施例之矽晶式雙慣性感測器如第五a 圖之架構，將a、b兩組類似第三圖之結構整合在一起，其Page 9 594014 _case number 92108160_year month_jfi_ V. Description of the invention (6) Precision control; therefore, the difference between the resonance frequency of the driving vibration system and the sensing vibration system can be effectively and accurately controlled. The driving force of the capacitor edge effect electrostatic driver is proportional to the length of the capacitor. In order to enhance the driving force, the effective edge length must be increased. The driver can be designed as a composite type, as shown in the top view of Figure 4a: The sides 5 1 ′, 5 2 ′ are widened, and several long grooves or even 5 t are etched from both sides to form two driver bodies 5 1 ′, 5 2 ′. Each long groove or long The shaped hole 5t can provide two edge effect drivers. The surfaces of the glass plates 71, 7 2 facing the silicon wafer 1 1 and the corresponding surfaces of the driver body 5 Γ each contain two sets of long electrodes 8 1, 8 2 that are interlaced with each other and parallel to the long grooves or holes 5 t. And respectively connected to the wiring boards 8 1 p, 8 1 η, as shown in the fourth figure b; the relative positions of the long grooves or holes 5t on the surface of the driver body 51 ′ and the corresponding long electrodes 8 1, 8 2 are as follows: As shown in the cross-sectional view of FIG. 4c, two sets of driving capacitors are formed. Similarly, the surfaces of the glass plates 7 1 and 7 2 facing the silicon wafer 1 1 and the surface of the corresponding driver body 52 ′ also include two sets of long electrodes 81 and 82 that are interlaced and parallel to the long groove 5t, and are connected respectively. To the terminal plates 8 2ρ, 8 2η, the surface of the driver body 52 'and the corresponding long electrode groups 81, 82 also form another two sets of driving capacitors. Properly adjust the phase of the AC voltage applied to each driving capacitor to make the output directions of the drivers consistent, so the driving force can be increased several times. Each driving capacitor can also be used to measure and feedback the driving amplitude to control the driving amplitude. [Embodiment] A silicon dual inertial sensor according to a preferred embodiment of the present invention is shown in the structure of the fifth figure a, which integrates a and b two groups of structures similar to the third figure.

594014594014

結構亦以（1 1 〇 )矽晶片Η姆、、E a 中包含-外框架2，外框。内式二刻製作而成。本實施例個中間固定錨21，及數個m個内框架5a… -個慣性質量塊3a、3b，各2，：框架5a、⑼各2 :目·丨踩Μ *择枚,、谷貝1塊3a或3b各以至少一個感 ^ h5 b牙^ 下#或簡稱支撐樑）4銜接於其對應之内框 Λ τ 1 ^^框架5a或讣各以至少一個驅動彈性支撐樑 η支Λ。Λ ”梁）6銜接於共同連接樑61，再經由共】二；ί，Λ4使質量塊3a、3b較易於沿垂直於矽晶片 5b較易於沿平行於石夕曰片U動’驅動樑6使内框架5a、運動；各内框架53或5^2表二之向（定義/y-軸向）為驅動器本體，其ί表= 2之二對邊51" 、52 槽或長形孔5t。各3數個垂直於”軸向之長形凹 .板71、72分別置於石夕晶片11之正面、背面，並與晶體外框^£2、一起。玻璃平板71、、72面對二疋/fi之及塊上2/合在丄础c； 1丨丨志品人士對矽日日片11之表面、對應驅動器組相互交錯且平行於長形凹槽或長形孔5tW電極板81、82，並分別連接至接線板81P 81Π ’如、第五b圖；驅動器本體51，，表面與其對應之長形電極板8 、形成兩組驅動電容器。同理，玻璃片平板71、 7 2面對矽f片11之表面、對應驅動器本體5 2 "表面亦含兩組相互父錯且平行於長形凹槽或長形孔5 t之長形電 81、82，並分別連接至之接線板82{)、82n，形成另兩組驅The structure is also composed of (1 10) silicon wafers Η, E,-an outer frame 2 and an outer frame. Made in two styles. In this embodiment, the intermediate fixed anchors 21, and several m inner frames 5a ...-an inertial mass 3a, 3b, each 2: frame 5a, each 2: head · step M * select the number, Gu Bei 1 Each of the blocks 3a or 3b is connected to its corresponding inner frame Λ τ 1 ^^ frame 5a or 以 with at least one sense elastic support beam η support Λ with at least one sense ^ h5 (b # ^ #). Λ "Beam) 6 is connected to the common connection beam 61, and then passes through two; Λ, Λ4 makes it easier for the masses 3a, 3b to move along the perpendicular to the silicon wafer 5b, and it is easier to move the beam 6 along the parallel to Shi Xiyue U. Make the inner frame 5a, move; each inner frame 53 or 5 ^ 2 Table 2 orientation (definition / y-axis) is the driver body, whose table = 2 bis opposite sides 51 ", 52 slot or long hole 5t Each of the three elongated concave plates 71, 72 perpendicular to the "axis" is placed on the front and back of the Shixi wafer 11, respectively, and together with the crystal frame ^ £ 2. The glass flat plates 71, 72 face the two / fi and / or on the base 2 / combined with the base c; 1 丨丨 People on the surface of the silicon sunscreen 11 and the corresponding driver group are staggered with each other and parallel to the long concave The slot or elongated hole 5tW electrode plates 81, 82 are respectively connected to the wiring plate 81P 81Π as shown in FIG. 5b; the driver body 51, the surface of which corresponds to the elongated electrode plate 8, forms two sets of driving capacitors. In the same way, the surface of the glass sheet plates 71, 7 2 facing the silicon f sheet 11 and corresponding to the driver body 5 2 " the surface also contains two sets of elongated shapes that are parallel to each other and parallel to the long grooves or holes 5 t Electricity 81, 82, and connected to the wiring board 82 {), 82n respectively, forming another two sets of driver

第11頁 594014 案號 92108160 年月曰修正五、發明說明（8) 動電容器。玻璃片平板7 1 、7 2面對矽晶片1 1之表面，對應質量塊 3a、3b表面亦分別鍍上金屬薄膜電極板9，並分別連接至接線板9 p、9 η，與質量塊表面形成感測用電容器。適當調配各驅動電容器外加驅動交流電壓之相位，使各質量塊3 a、3 b沿y -軸向相反方向振動。若沿X -軸向有一轉動角速度Ω ，則將產生柯氏力使其質量塊3a、3b沿z-軸向相反方向振動；若沿z -軸向亦輸入一加速度時，慣性力將使質量塊3 a、3 b產生沿z -轴向相同方向之位移。當質量塊3a、3b位移或振動時，其與玻璃平板71、72上之金屬薄膜電極板9所形成之感測用電容器因間距改變而使電容值改變，兩者之改變值相反，故量測兩組感測電容器之電容值差值即可得知質量塊3 a、3b位移量。由角速度所產生之輸出信號為交流信號，由加速度所產生之輸出信號為直流信號，經由信號處理技術可分離出X-軸角速度及z-軸加速度信號。感測電容器之電極9亦可部份分割出來，如第五b 圖之回授電極板9 f、及其接線板9 f b，以作為陀螺儀制衡回授驅動器之用。為降低質量塊3或質量塊3a、3b沿z-軸向振動時之空氣膜受擠壓所產生之空氣阻力、提昇z-軸向振動系統之共振放大率Q，可在質量塊3表面蝕刻數個凹洞或平行於質量塊3、3 a、或3 b邊緣之細長條溝槽31，如第六圖所示。本發明因係採用（1 1 0 )矽晶片1 1 ，具垂直深蝕刻特性，故蝕刻長形凹槽或長形孔較不會浪費感測電容器之面積，提昇輸出信號之靈敏度；若空氣阻力仍然太大，則需抽真空。Page 11 594014 Case No. 92108160 Month Amendment V. Description of Invention (8) Dynamic capacitor. The surfaces of the glass plates 7 1 and 7 2 facing the silicon wafer 11 1 are also plated with metal thin film electrode plates 9 corresponding to the surfaces of the masses 3a and 3b, respectively, and connected to the wiring plates 9 p and 9 η, respectively. Form a sensing capacitor. Properly adjust the phase of the driving AC voltage applied to each driving capacitor, so that each mass 3a, 3b vibrates in the opposite direction of the y-axis. If there is a rotational angular velocity Ω in the X-axis direction, a Coriolis force will be generated to cause the masses 3a, 3b to vibrate in the opposite direction of the z-axis; if an acceleration is also input in the z-axis direction, the inertial force will cause the mass Blocks 3a, 3b produce displacements in the same direction along the z-axis. When the mass 3a, 3b is displaced or vibrated, the capacitance value of the sensing capacitor formed with the metal thin film electrode plate 9 on the glass flat plates 71, 72 changes due to the change in the distance. The change values of the two are opposite, so the amount is the same. By measuring the difference between the capacitance values of the two sets of sensing capacitors, the displacements of the mass blocks 3a and 3b can be obtained. The output signal generated by the angular velocity is an AC signal, and the output signal generated by the acceleration is a DC signal. X-axis angular velocity and z-axis acceleration signals can be separated by signal processing technology. The electrode 9 of the sensing capacitor can also be partially divided, such as the feedback electrode plate 9 f in Figure 5b, and its wiring board 9 f b, as a gyroscope balance feedback driver. In order to reduce the air resistance caused by the compression of the air film when the mass 3 or masses 3a and 3b vibrate along the z-axis, and improve the resonance magnification Q of the z-axis vibration system, the surface of the mass 3 can be etched Several recesses or elongated grooves 31 parallel to the edges of the mass 3, 3a, or 3b are shown in the sixth figure. Because the present invention adopts (1 1 0) silicon wafer 1 1 and has vertical deep etching characteristics, the etching of a long groove or a long hole will not waste the area of the sensing capacitor and improve the sensitivity of the output signal; if air resistance Still too large, you need to evacuate.

第12頁 594014 -- 案號92insifin_年月日倐正 __ 五、發明說明（9) 為避免製程中矽晶片與玻璃片進行接合時，產生質量塊與玻璃片沾粘之問題，可在質量塊3表面上設計數個小凸點或凸線3 s及其絕緣層3 i當阻擋器，如第六圖所示。為增強矽晶片與玻璃片平板之接合力，原矽晶片中無特定用途且不妨礙可動元件運動之部份應盡量保留，如第五a圖所示之連接塊22，以與玻璃平板接合。為消除溫度變化對輸出信號之影響、提昇陀螺儀及加速儀之性能，如第六圖所示，可在外框架2、中間固定錨 21或連接塊22之表面蝕刻一小凹面TS1，並在對應之玻璃片表面鍍上金屬薄膜電極TS2，並連接至接線板TS，形成感測溫度用之電容器，因其不受加速度、角速度之影響，只單純的反應電容器隨溫度之改變，故可用以補償感測慣性力用之電容器受溫度之影響。如第五a圖所示，因矽晶片1 1具導電性，故外框架2表面，對應玻璃平板71、72表面之各金屬薄膜導線通過之處，必須蝕刻小凹槽s t形成通道，以避免短路。基於上述二實施例之設計精神，可有許多不同的設計與組合，例如，質量塊與二玻璃平板7 1、7 2間之電容器間隙等，可改由在玻璃平板7 1、7 2表面钱刻凹面；彈簧片組之設計與排列亦可有不同的變化’例如’各内框架5之驅動彈性支樓標6亦可直接銜接於外框架2等。綜上所述，本發明乃揭示一種利用（1 1 0 )矽晶片1 1之垂直深蝕刻特性製作之雙慣性感測器，可精確控制驅動樑 6之寬度，及驅動共振頻率，提昇製程成功率及角速度感測性能；並另含多項功能：1 ·降低空氣阻力設計，提昇感Page 12 594014-Case number 92insifin_ 年月日倐正 __ V. Description of the invention (9) In order to avoid the problem of adhesion between the mass and the glass sheet when the silicon wafer and the glass sheet are bonded during the manufacturing process, A number of small bumps or convex lines 3 s and their insulation layers 3 i are designed on the surface of the mass 3 as a stopper, as shown in the sixth figure. In order to enhance the bonding force between the silicon wafer and the glass plate, the portion of the original silicon wafer that has no specific purpose and does not hinder the movement of the movable element should be kept as much as possible, such as the connection block 22 shown in Figure 5a, to join the glass plate. In order to eliminate the influence of temperature change on the output signal and improve the performance of the gyroscope and accelerometer, as shown in the sixth figure, a small concave TS1 can be etched on the surface of the outer frame 2, the middle anchor 21 or the connection block 22, and correspondingly The surface of the glass sheet is plated with a metal thin film electrode TS2 and connected to the wiring board TS to form a capacitor for temperature sensing. Since it is not affected by acceleration and angular velocity, it only responds to the change of capacitor with temperature, so it can be used to compensate Capacitors for sensing inertial forces are affected by temperature. As shown in Figure 5a, because the silicon wafer 11 is conductive, the surface of the outer frame 2 corresponding to the passage of each metal thin film wire on the surface of the glass flat plate 71, 72 must be etched with a small groove st to form a channel to avoid Short circuit. Based on the design spirit of the above two embodiments, there can be many different designs and combinations. For example, the capacitor gap between the mass block and the two glass plates 7 1 and 72 can be changed on the surface of the glass plates 7 1 and 7 2. The concave surface; the design and arrangement of the spring leaf group can also have different changes. For example, the driving elastic supporting sign 6 of each inner frame 5 can also be directly connected to the outer frame 2 and so on. In summary, the present invention discloses a dual inertial sensor manufactured by using the vertical deep etching characteristics of (1 1 0) silicon wafer 1 1 to accurately control the width of the driving beam 6 and the driving resonance frequency to improve the process success. Rate and angular velocity sensing performance; and also contains a number of functions: 1 · Reduce air resistance design, improve the sense

第13頁 594014 __案號 92108160_年月日__ 五、發明說明（10) 測軸向之共振放大率；2 .防止質量塊與玻璃片沾粘設計； 3 .内建一個以上的溫度感測用電容器，以即時直接量測晶片之實際溫度變化，改善雙慣性感測器之溫度誤差。查同類案號（美國專利5，3 9 2，6 5 0 ，1 9 9 5 ，I PC類別： G 0 1 P 1 5 / 1 2 5 ; G 0 1 C 1 9 / 5 6 )之雙慣性感測器，並未揭示本發明所述及之相同特徵，故本案應符合「新穎性」之專利要件。其次，本發明藉由利用（11 0 )矽晶片之垂直深蝕刻特性，可精確控制驅動樑之寬度，及驅動共振頻率，提昇製程成功率及角速度感測性能；並另含降低空氣阻力設計，提昇感測軸向之共振放大率；防止質量塊與玻璃片沾粘設計；内建一個以上的溫度感測器，改善此類感測儀之溫度誤差，提昇使用時的便利性等，故本案應符合「產業利用性」及「進步性」之專利要件，爰依專利法之規定提出本項發明之專利申請。Page 13 594014 __Case No. 92108160_Year Month and Day__ V. Description of the invention (10) Measuring the axial resonance magnification; 2. Design to prevent the mass from adhering to the glass sheet; 3. Built-in more than one temperature The sensing capacitor can directly measure the actual temperature change of the chip in real time to improve the temperature error of the dual inertial sensor. Check the same case number (US Patent 5, 3 9 2, 6 50, 19 95, I PC category: G 0 1 P 1 5/1 2 5; G 0 1 C 1 9/5 6) The sensor does not reveal the same features described in the present invention, so the case should meet the patent requirements of "newness". Secondly, the present invention can accurately control the width of the driving beam and the driving resonance frequency by utilizing the vertical deep etching characteristics of the (110) silicon wafer, and can improve the process success rate and angular velocity sensing performance; Promote the resonance magnification of the sensing axis; prevent the mass block from adhering to the glass sheet; built-in more than one temperature sensor to improve the temperature error of such sensors and improve the convenience during use, etc. It shall meet the patent requirements of "industrial availability" and "progressiveness", and submit a patent application for this invention in accordance with the provisions of the Patent Law.

第14頁 594014 _案號 92108160_年月日__ 圖式簡單說明第一圖所示係習知雙慣性感測器上視圖。第二圖所示係習知以（1 〇〇 )矽晶蝕刻製作驅動彈性支撐樑之程序，其中第（c )圖〜第（e )圖分別為由驅動彈性支撐樑兩邊蝕刻至接近完成前後之側面形狀示意圖。第三圖所示係本發明可行實施例之（1 1 0 )矽晶片雙慣性感測器結構上視圖。第四a圖所示係複合式驅動電容器本體之結構上視圖。第四b圖所示係玻璃板表面之驅動電容器長形電極組及其接線板。第四c圖所示係複合式驅動電容器之結構橫截面圖。第五a圖所示係本發明較佳實施例之（1 1 0 )矽晶片雙慣性感測器之矽晶本體結構上視圖。第五b圖所示係本發明較佳實施例玻璃平板上之驅動電/容 Is長形電極組、感測電容Is電極板、及其接線板等。第六圖所示係質量塊上為降低空氣阻力之狹縫設計及防止沾枯設計之結構示意圖。元件符號簡單說明： 1 (1 0 0 )矽晶片 11 (1 1 0 )矽晶片 2 外框架 2 1 中央固定錨 22 連接塊，用以增加玻璃-矽晶片之接著面積 3、3a、3b 慣性質量塊 3 t 慣性質量塊上降低空氣阻力之狹縫Page 14 594014 _case number 92108160_ year month day __ Brief description of the diagram The first picture shows the top view of a conventional dual inertial sensor. The second picture shows a conventional procedure for manufacturing a driving elastic support beam using (100) silicon etching. Figures (c) to (e) are respectively etched by driving both sides of the elastic support beam to before and after completion. Schematic diagram of the side shape. The third figure shows a top view of the structure of a (110) silicon wafer dual inertial sensor according to a feasible embodiment of the present invention. Figure 4a is a top view of the structure of the composite driving capacitor body. Figure 4b shows the long electrode group of the driving capacitor on the surface of the glass plate and its wiring board. Figure 4c is a cross-sectional view of the structure of a composite driving capacitor. The fifth a shows the top view of the silicon crystal structure of the (1 10) silicon wafer dual inertial sensor of the preferred embodiment of the present invention. The fifth figure b shows the driving electrode / capacitance Is elongated electrode group, the sensing capacitor Is electrode plate, and its wiring board on the glass plate of the preferred embodiment of the present invention. Figure 6 is a schematic diagram of the design of the slit on the mass block to reduce the air resistance and the design to prevent tarnishing. Simple description of the component symbols: 1 (1 0 0) silicon chip 11 (1 1 0) silicon chip 2 outer frame 2 1 central anchor 22 connection block to increase the bonding area of the glass-silicon chip 3, 3a, 3b inertial mass Slot for reducing air resistance on a 3 t inertial mass

第15頁 594014 _案號 92108160_年月日__ 圖式簡單說明 3 s、3 i 慣性質量塊表面防止粘黏之阻擋器之凸線、及其絕緣層 4 感測彈性支撐樑 5、5a、5b 内框架 5 1、5 2、5 1 ’ 、5 2 ’ 、5 1π 、5 2 π 内框架5之二對邊，亦為驅動器本體 5t 驅動器本體之長形溝槽或長形孔 6 彈性驅動彈性支撐樑 60 共同支撐樑 61 共同連接樑Page 15 594014 _Case No. 92108160_Year_Month__ Schematic description of the 3 s, 3 i inertial mass block surface of the sticky barrier to prevent sticking, and its insulation layer 4 Sensitive elastic support beams 5, 5a , 5b Inner frame 5 1, 5 2, 5 1 ′, 5 2 ′, 5 1π, 5 2 π The two opposite sides of the inner frame 5 are also the long grooves or long holes 6 of the drive body 6 Elasticity Drive elastic support beam 60 common support beam 61 common connection beam

7 1、7 2 玻璃平板 81、82 玻璃板上驅動器之長形電極板 8p、8n 玻璃板上驅動器之長形電極組之接線板 81p、81n 玻璃板上對應驅動器本體51之長形電極組之接線板 8 2 ρ "82η 玻璃’板上對應驅動器本體52之長形電極組之接線板 9、9 p、9 η 玻璃板上之感測器電極板、及其接線板 9f、9fb 玻璃板上之回授電極板、及其接線板 TS1 感測溫度用之電容器在晶體外框架2、中間固定錨 21或連接塊22之凹面7 1, 7 2 Glass plate 81, 82 Long electrode plate of driver on glass plate 8p, 8n Long electrode plate of driver plate on glass plate 81p, 81n Glass plate corresponds to long electrode group of driver body 51 Terminal board 8 2 ρ " 82η glass' board corresponding to the elongated electrode group of the driver body 52 of the terminal board 9, 9 p, 9 η sensor board on the glass board, and its terminal board 9f, 9fb glass board The feedback electrode plate on the top and the TS1 capacitor on the concave surface of the crystal outer frame 2, the intermediate anchor 21 or the connecting block 22 for temperature sensing.

TS2、TS 玻璃板上之感測溫度用電容器之電極板、及接線板 G 1、G 與矽晶片接觸之電極板、及其接線板 st 外框架表面之'凹槽，讓玻璃板上之導線經過TS2, the electrode plate of the capacitor for temperature sensing on the TS glass plate, and the terminal plate G1, the electrode plate in contact with the silicon chip, and the 'groove' on the surface of the outer frame of the terminal plate st. through

第16頁 594014 _案號92108160_年月日_修正圖式簡單說明第17頁Page 16 594014 _Case No. 92108160_Year Month Day_Amendment

Claims

乃4〇14 六曰 —-案藏 Q2108160 、申請專利範圍種矽晶式雙慣性感測器 i敕二=向加速度感測功能，微細加工法製作而成修正包含一軸向角速度感測功其結構係以一（1 1 0 )矽晶片其整體之外形為一平行四邊形；其纟士摇—a ., . ^ 六I篮之外形為一平行四、集架、二：f包含-外框•，外框架内包含第：」：：邊對應之内框架，各内^ ::測彈性支撐樑銜接於其接於外框㉟，或連接於：固驅動彈性支撐樑直接連擇樑連接於中間固定錯？接樑經共同支石夕晶片之正面與背面，並盘β二二=t板分別置於於沿垂直於i曰片表面：”彈性支撐樑使各質量塊較易性支揮樑使内=向Λ定義為z-軸向)運動，驅動彈 (定義為y-軸向）運動；各内框丁_片/ \之—方向或二對邊為驅動器本體千仃於y_軸向之一邊之長形凹槽或=體 :動：表面含有兩組相互交錯且平行於長形凹長器；各平板面對…之：：本；驅動” 金屬薄膜電極板，•質量塊表面形 =產生沿y_軸向反向振動，並亦產生沿卜軸向反向振動，#沿X-軸向有一轉動 Ω，則將產生柯氏力使其各質量塊沿2_軸向反向若No. 0414, Liu Yue --- Case Collection Q2108160, patent application scope silicon type dual inertial sensor i 敕二 = direction acceleration sensing function, made by micro-machining method, the correction includes an axial angular velocity sensing function. The structure is based on a (1 1 0) silicon wafer whose overall outer shape is a parallelogram; its shaker—a.,. ^ The six I-baskets are shaped as a parallel four, a rack, and two: f contains-an outer frame •, the outer frame contains the first: ":: the inner frame corresponding to the side, each inner ^ :: test elastic support beam is connected to the outer frame ㉟, or connected to: the solid drive elastic support beam is directly connected to the selected beam and connected to Wrong in the middle? The beams pass through the front and back of the common support chip, and the two plates β 22 = t plates are respectively placed along the surface perpendicular to the film: "The elastic support beam makes it easier for each mass to support the beam to the inner = The movement toward Λ is defined as z-axis direction, and the drive projectile is defined as y-axis direction; each inner frame is _piece / \ 之 —direction or two opposite sides are one side of the driver body which is located in the y_ direction. Long groove or body: moving: the surface contains two sets of interlaced and parallel to the long concave long device; each flat face ... of :: this; drive "metal thin film electrode plate, • mass block surface shape = generated Reverse vibration along the y_ axis, and also generate reverse vibration along the bu axis. # There is a rotation Ω along the X-axis, and a Coriolis force will be generated to cause each mass to reverse in the 2_ axis.

第18頁 594014 _案號92108160_年月曰修正_ 六、申請專利範圍沿z -軸向亦輸入一加速度時，慣性力將使各質量塊產生沿 z-軸向相同方向之位移；當各質量塊位移或振動時，其與平板上之感測電極板所形成之感測用電容器因間距改變而使電容值改變，故量測該電容值改變量即可得知各質量塊位移量；由角速度所產生之輸出信號為交流信號，由加速度所產生之輸出信號為直流信號，利用信號處理技術可分離出角速度及加速度信號。 2. 如申請專利範圍第1項所述之矽晶式雙慣性感測器，其中各質量塊之正面及反面各含數個小凸點或長條形凸線及其表面之絕緣層阻擋器，以避免質量塊與平板沾粘一起。Page 18 594014 _Case No. 92108160_ Year and Month Amendment_ 6. When the patent application scope also inputs an acceleration along the z-axis, the inertial force will cause the masses to be displaced in the same direction along the z-axis; when each When the mass is displaced or vibrated, the capacitance of the sensing capacitor formed by the sensing electrode plate on the flat plate changes due to the change in the distance. Therefore, the amount of displacement of each mass can be obtained by measuring the amount of change in the capacitance; The output signal generated by the angular velocity is an AC signal, and the output signal generated by the acceleration is a DC signal. The angular velocity and acceleration signals can be separated by using signal processing technology. 2. The silicon crystalline dual inertial sensor as described in item 1 of the scope of patent application, wherein the front and back sides of each mass block each contain several small bumps or strip-shaped convex wires and the insulation barrier of the surface. To prevent the mass from sticking to the plate.

3. 如申請專利範圍第1項所述之矽晶式雙慣性感測器，其中各質量塊之正面及反面各含數個平行於質量塊任一邊之長形凹槽或狹縫，以降低質量塊沿z -軸向振動時之空氣阻力。 4. 如申請專利範圍第1項所述之矽晶式雙慣性感測器，其中外框架、連接塊或固定錨之表面包含一個以上之凹面，其對應之平板表面亦鍍有金屬薄膜電極，形成一溫度感測電容器，因其安置之區域不受慣性力之影響，其電容值僅隨溫度變化，故可用以補償雙慣性感測器受溫度之影響。3. The silicon crystal dual inertial sensor described in item 1 of the scope of patent application, wherein each of the front and back sides of each mass contains several long grooves or slits parallel to either side of the mass to reduce Air resistance when the mass is vibrating along the z-axis. 4. The silicon crystal dual inertial sensor described in item 1 of the scope of patent application, wherein the surface of the outer frame, the connection block or the anchor includes more than one concave surface, and the corresponding flat surface is also plated with a metal thin film electrode, A temperature sensing capacitor is formed, because the area where it is placed is not affected by the inertial force, and its capacitance value only changes with the temperature, so it can be used to compensate for the effect of the temperature of the dual inertial sensor.

5. 如申請專利範圍第2項所述之矽晶式雙慣性感測器，其中各質量塊之正面及反面各含數個平行於質量塊任一邊之長形凹槽或狹缝，以降低質量塊沿z -軸向振動時之空氣阻力。 6. 如申請專利範圍第2項所述之矽晶式雙慣性感測器，其5. The silicon crystal dual inertial sensor as described in item 2 of the scope of the patent application, wherein each of the front and back sides of each mass contains several long grooves or slits parallel to either side of the mass to reduce Air resistance when the mass is vibrating along the z-axis. 6. The silicon dual inertial sensor as described in item 2 of the patent application scope, which

第19頁 594014 _案號 92108160_年月曰修正_ 六、申請專利範圍中外框架、連接塊或固定錨之表面包含一個以上之凹面，其對應之平板表面亦鍍有金屬薄膜電極，形成一溫度感測電容器，因其安置之區域不受慣性力之影響，其電容值僅隨溫度變化，故可用以補償雙慣性感測器受溫度之影響。 7. 如申請專利範圍第3項所述之矽晶式雙慣性感測器，其中外框架或固定錨之表面包含一個以上之凹面，其對應之平板表面亦鍍有金屬薄膜電極，形成一溫度感測電容器，因其安置之區域不受慣性力之影響，其電容值僅隨溫度變化，故可用以補償雙慣性感測器受溫度之影響。Page 19 594014 _Case No. 92108160_ Year and month amendment_ VI. The scope of the patent application includes the surface of the outer frame, connection block or anchor including more than one concave surface, and the corresponding flat surface is also plated with a metal film electrode to form a temperature The sensing capacitor is not affected by inertial force in the area where it is placed, and its capacitance value only changes with temperature, so it can be used to compensate for the effect of temperature on the dual inertial sensor. 7. The silicon crystal dual inertial sensor as described in item 3 of the patent application scope, wherein the surface of the outer frame or the anchor includes more than one concave surface, and the corresponding flat surface is also plated with a metal thin film electrode to form a temperature The sensing capacitor is not affected by the inertial force in the area where it is placed, and its capacitance value only changes with temperature, so it can be used to compensate for the effect of temperature on the dual inertial sensor.

8. 如申請專利範圍第1項所述之矽晶式雙慣性感測器，其中各質量塊之正面及反面各含數個小凸點或長條形凸線及其表面之絕緣層當阻擋器，以避免質量塊與平板沾粘一起；各質量塊之正面及反面各含數個平行於質量塊任一邊緣之長形凹槽或狹缝，以降低質量塊沿z -轴向振動時之空氣阻力；外框架、連接塊或固定錨之表面包含一個以上之凹面，其對應之平板表面亦鍍有金屬薄膜電極，形成一溫度感測電容器，因其安置之區域不受慣性力之影響，其電容值僅隨溫度變化，故可用以補償雙慣性感測器受溫度之影響。8. The silicon crystal dual inertial sensor as described in item 1 of the scope of the patent application, wherein the front and back sides of each mass block each contain several small bumps or strip-shaped convex wires and the insulating layer on the surface as a barrier To prevent the mass from sticking to the plate; the front and back of each mass contain several long grooves or slits parallel to any edge of the mass to reduce the mass vibration along the z-axis Air resistance; the surface of the outer frame, connection block or anchor contains more than one concave surface, and the corresponding flat surface is also plated with a metal film electrode to form a temperature sensing capacitor, because the area where it is installed is not affected by inertial forces Since its capacitance value only changes with temperature, it can be used to compensate the effect of temperature on the dual inertial sensor.

9. 如申請專利範圍第1項所述之矽晶式雙慣性感測器，其中各平板面對矽晶片之表面，對應各質量塊上方除包含金屬薄膜感測電極外，另包含陀螺儀制衡回授驅動器之金屬薄膜電極。 1 0. —種碎晶式雙慣性感測器，包含一軸向角速度感測功9. According to the silicon crystal dual inertial sensor described in item 1 of the patent application scope, wherein each flat plate faces the surface of the silicon wafer, corresponding to each mass above the metal film sensing electrode and the gyroscope balance The metal thin film electrode of the feedback driver. 1 0. — A broken crystal dual inertial sensor, including an axial angular velocity sensor

第20頁 594014 案號 92108160Page 20 594014 Case No. 92108160

六、申請專利範圍能及一軸向加速度感測功能；其結構為由具導作而成，包含一外框架，外框架内包含至一 :十t板策 L , 土乂加速儀、一固定錯及數個連接塊；各加速儀包含一内框架及一量塊’質量塊以數個感測彈性支樓樑銜接於其對應之内框架；各内框架各以數個驅動彈性支撐樑直接連接£外框架，或經連接樑、支撐樑連接於固定錨；該結構另包^二片平板分別置於石夕晶片之正面與背面，並與矽晶 ^二架、中間固定錨及連接塊結合在一起；其中感測標使各質量塊較易於沿垂直於石夕晶片表面方向轴向）運動，驅動彈性支撐樑使内框架較易於沿晶片表面之一方向（定義為y-軸向）運動；各内行於y-轴向之二對邊為驅動器本體，盆兩表面人、直於y-軸向之長形凹槽或長形孔· ^ 各s數個垂面，對應各驅動器本體表面含有土反、、矽晶片之表形凹槽或長形孔之長形電極板，與驅千仃於長組驅動電極；各平板面對矽θ H 本體表面形成兩處，亦鍍有金屬薄膜電極板B，曰盥面’對應各質量塊器；當驅動電容器加上震盪赃^ >I塊表面形成感測電容内框架產生沿y-轴向反向，將產生靜電力促使轴向反向振冑，若沿X-輛jf v動質量塊亦產生沿y-柯氏力使其各質量塊沿z4 : :;f角速度Ω ’則將產生入一加速度時，慣性力將使2暂:、動，若/β ζ ~軸向亦輸向之位移；當各質量塊位s ^ $產生沿Ζ-軸向相同方號；由角速度所產生之輪加速儀可輸出信 J出仏號為交流信號，由加速度所 594014 案號 92108160 曰修正六、申請專利範圍產生之輸出信號為直流信號，利用信號處理技術可分離出角速度及加速度信號。 1 1.如申請專利範圍第1 0項所述之矽晶式雙慣性感測器，其結構係以一（11 0 )矽晶片經整體微細加工法製作而成，其各元件及整體之外形為一平行四邊形。 1 2.如申請專利範圍第1 0項所述之矽晶式雙慣性感測器，其中質量塊之正面及反面各含數個小凸點或長條形凸線及其表面之絕緣層阻擋器，以避免質量塊與平板沾钻一起。 1 3.如申請專利範圍第1 0項所述之矽晶式雙慣性感測器，其中質量塊之正面及反面各含數個平行於質量塊任一邊之長形凹槽或狹縫，以降低質量塊沿z -軸向振動時之空氣阻力。 1 4.如申請專利範圍第1 0項所述之矽晶式雙慣性感測器，其中外框架、連接塊或固定錨之表面包含一個以上之溫度感測器，因其安置之區域不受慣性力之影響，其輸出值僅隨溫度變化，故可用以補償雙慣性感測器受溫度之影響。 1 5.如申請專利範圍第1 2項所述之矽晶式雙慣性感測器，其中各質量塊之正面及反面各含數個平行於質量塊任一邊之長形凹槽或狹缝，以降低質量塊沿z_軸向振動時之空氣阻力。 1 6.如申請專利範圍第1 2項所述之矽晶式雙慣性感測器，其中外框架、連接塊或固定錨之表面包含一個以上之溫度感測器，因其安置之區域不受慣性力之影響，其輸出值僅隨溫度變化，故可用以補償雙慣性感測器受溫度之影響。6. The scope of patent application and an axial acceleration sensing function; its structure is made of a guide, including an outer frame, the outer frame contains up to one: ten t board policy L, soil accelerometer, a fixed Staggered with several connecting blocks; each accelerometer includes an inner frame and a gauge block; the mass block is connected to its corresponding inner frame by several sensing elastic branch beams; each inner frame is directly driven by several elastic support beams Connected to the outer frame, or connected to the fixed anchor via connecting beams and supporting beams; the structure includes two additional plates, which are placed on the front and back of the Shixi chip, and are connected to the silicon frame, the second fixed anchor, and the connection block. Together; the sensor marks make it easier for the masses to move along the axis perpendicular to the surface of the wafer, and drive the elastic support beam to make the inner frame easier to move along one of the wafer surfaces (defined as the y-axis) Movement; the two opposite sides in the y-axis are the drive body, the two sides of the basin are long grooves or holes that are straight to the y-axis · ^ each s number of vertical planes, corresponding to each drive body The surface contains soil, silicon, silicon Surface-shaped grooves or elongated holes of the long electrode plate are connected with the driving electrodes of the long group; each plate faces the surface of the silicon θ H body, and is also plated with a metal thin-film electrode plate B. Corresponds to each mass block; when the driving capacitor is added with vibration ^ > the surface of the I block forms a sensing capacitor, the inner frame generates a reverse direction along the y-axis, and an electrostatic force will be generated to promote the axial reverse vibration. A jf v moving mass also generates a force along y- Coriolis to make each mass along z4::; f angular velocity Ω 'will generate an acceleration, the inertial force will make 2 temporary :, moving, if / β ζ ~ The displacement is also transmitted in the axial direction; when each mass block position s ^ $ produces the same square sign along the Z-axis; the wheel accelerometer generated by the angular velocity can output the letter J and the 为 sign is an AC signal, which is accelerated by 594014 Case No. 92108160 means amendment 6. The output signal generated by the scope of patent application is a DC signal, and the angular velocity and acceleration signals can be separated by using signal processing technology. 1 1. The silicon crystal dual inertial sensor as described in item 10 of the scope of patent application, the structure of which is made of a (11 0) silicon wafer through the overall microfabrication method, and its components and the overall shape It is a parallelogram. 1 2. The silicon crystalline dual inertial sensor as described in item 10 of the scope of patent application, wherein the front and back sides of the mass block each contain several small bumps or strip-shaped convex wires and the insulation layer on the surface to block To prevent the mass from sticking with the drill. 1 3. The silicon crystal dual inertial sensor as described in item 10 of the scope of patent application, wherein the front and back sides of the mass each contain several long grooves or slits parallel to either side of the mass, and Reduce air resistance when the mass is vibrating along the z-axis. 14. The silicon crystal dual inertial sensor as described in item 10 of the scope of the patent application, wherein the surface of the outer frame, the connection block or the anchor includes more than one temperature sensor, because the area where it is installed is not affected The output value of the inertial force only changes with temperature, so it can be used to compensate for the effect of temperature on the dual inertial sensor. 1 5. The silicon crystal dual inertial sensor as described in item 12 of the scope of the patent application, wherein each of the front and back sides of each mass contains several long grooves or slits parallel to any side of the mass, To reduce the air resistance when the mass is vibrating along the z_ axis. 16. The silicon crystal dual inertial sensor according to item 12 of the scope of the patent application, wherein the surface of the outer frame, the connection block or the anchor includes more than one temperature sensor, because the area where it is installed is not affected The output value of the inertial force only changes with temperature, so it can be used to compensate for the effect of temperature on the dual inertial sensor.

594014 案號 92108160 A_η 曰修正六、申請專利範圍 1 7.如申請專利範圍第1 其中外框架、連接塊或面，其對應之平板表面感測電容器，因其安置值僅隨溫度變化，故可響。 1 8 .如申請專利範圍第1 其中各質量塊之正面及及其表面之絕緣層當阻起；各質量塊之正面及緣之長形凹槽或狹缝，氣阻力；外框架、連接溫度感測器，因其安置值僅隨溫度變化，故可響。 3項所述之矽晶式雙慣性感測器，固定錨錨之表面包含一個以上之凹亦鍍有金屬薄膜電極，形成一溫度之區域不受慣性力之影響，其電容用以補償雙慣性感測器受溫度之影〇項所述之矽晶式雙慣性感測器，反面各含數個小凸點或長條形凸線擋器，以避免質量塊與平板沾粘一反面各含數個平行於質量塊任一邊以降低質量塊沿ζ -軸向振動時之空塊或固定錨之表面包含一個以上之之區域不受慣性力之影響，其輸出用以補償雙慣性感測器受溫度之影594014 Case No. 92108160 A_η Revision VI. Application for Patent Scope 1 7. If the scope of patent application is No. 1 in which the outer frame, connection block or surface, the corresponding flat surface sensing capacitor, its placement value only changes with temperature, so it can be ring. 18. If the first scope of the application for patents includes the front side of each mass block and the insulation layer on its surface, the long grooves or slits on the front and edges of each mass block, air resistance; outer frame, connection temperature The sensor can sound because its placement value only changes with temperature. The silicon-type dual inertial sensor described in item 3, the surface of the fixed anchor includes more than one recess and is also plated with a metal film electrode, forming a temperature region that is not affected by inertial forces, and its capacitance is used to compensate for the dual inertia The sexy sensor is affected by temperature. The silicon dual-inertial sensor described in item 0, each with several small bumps or long convex wire stoppers on the reverse side to prevent the mass from sticking to the flat surface. Several parallel to one side of the mass to reduce the mass when the mass is vibrated along the ζ-axis. The surface of the anchor or anchor contains more than one area that is not affected by inertial force. Its output is used to compensate the dual inertial sensor. Shadow of temperature

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