591349 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、內容、實施方式及圖式簡 單說明） 發明所屬夕技術領域 本發明是關於一種去光阻組成物以及使用此組成物 的圖案形成方法，更確切地說，是關於將微影蝕刻中作爲 罩幕使用之光阻加以去除的組成物以及使用此組成物的圖 案形成方法。 先前技術 近來，伴隨著像電腦這樣的資訊媒體的普及，半導 體裝置得到飛速的發展。在其功能方面，在半導體高速運 轉的同時要求大容量的儲藏量。爲此，半導體裝置向提高 積集度、依賴度和反應速度等方向的製造技術上面發展。 因此，作爲用於提高半導體裝置集成度的主要技術，對像 微影蝕刻這樣的細微加工技術要求變得很嚴格。 所謂的上述微影技術，就是在基板（含有用以形成 圖案的層）上形成了使用有機光阻的光阻層後、通過進行 曝光和顯影來除去光阻層預定的部位以形成光阻圖案。 關於微影技術的一個例子，在美國專利第6200903 號（Kim et al.)和第 6214637 號(〇h et al·)有所揭露。 而且，對於使用上述光阻圖案作爲蝕刻罩幕以進行 蝕刻步驟，將被加工物形成圖案後，對在上述作爲蝕刻罩 幕的光阻圖案進行剝離。 上述罩幕中所使用的光阻通過使用組成物進行剝 10605pif.doc/008 6 離，組成物是由使光阻溶解的抑制劑（inhibitor)、爲了防 止由於上述組成物施加於被加工物上所造成之損傷的抑制 劑，和爲了除去細微光阻性的殘留物的抑制劑等組成。 對上述的組成物進行具體的說明如下所述，作爲使 上述光阻溶解的物質含有丙酮（acetone)、2 -丙醇 (2propanol)、甲基乙基酮（methylethylketine; MEK)、單 乙醇胺（monoehanolamine; MEA )、N—甲基一2 — D比喀院 酮（N-methyl-2-pyrrolidine; NMP )、甲基乙酸（ethylacetate; EA )、甲醇(methanol)或者甲基異丁酮(methylisobytyketone; MIK)等。爲了防止由於上述組成物施加在被加工物的損 傷，含有像鄰苯二酣（catechol)等這樣的螯合劑（chelating agent)等。而且，除去上述細微的光阻性殘留物，含有二 甲基亞碾（dimethylsulfoxide; DMSO )、二甲基乙醯胺 (dimethylacetamide; DMAC )、乙基乙氧基乙醇乙酸 (ethylcellosolveacetate; ECA )、丁基乙氧基乙醇乙酸 (buthylcellosolveacetate; BCA )、甲基乙氧基乙醇乙酸 (methylcellosolveacetate; MCA)或者 N—丁基乙酸（N-buthylacetate; NBA)等0 對於含有上述單乙醇胺、二甲基亞楓和N-甲基-2 -吡喀烷酮等的組成物的例子，在美國專利第6218087號 和第621 1 127號等有所披露。 但是，使用現有組成物的光阻剝離’上述被加工物 受到損傷的狀況頻繁地發生。特別是，當上述加工物是金 屬時，上述損傷猛烈地發生，儘管使用了上述的鄰苯二酚 10605pif.doc/008 7 等，但組成物會蝕刻加工物。另外，在光阻剝離中儘管使 用了甲基亞楓’由於沒有完全除去光阻，而頻繁發生殘留 物殘留的情況。而且’在組成物中，使用單乙醇胺時，黏 度高達34cps。因此，舄了把組成物的黏度降低到i7cps， 有必要多加入抑制劑等。因此，形成在上述光阻剝離中增 加所使用組成物之使用量和縮短組成物之使用壽命的原 因。 因此’要求開發出能使被加工物的損傷最少化、不 殘留光阻性殘留物、完全地除去上述的光阻、降低黏度的 去光阻組成物。 發明內容 本發明的第一個目的是提供一種去光阻組成物，以 使被加工物的損傷最少、不殘留光阻性殘留物、除去光阻。 本發明的第二個目的是提供一種方法，以使通過設 定的圖案正確地形成被加工物。 爲了達到上述目的，本發明的組成物含有烷醇胺、 嗎啉氧化物系化合物、抑制劑化合物以及去離子水。 爲了達到上述目的，本發明形成圖案的方法包括： 在被加工物上使用光阻、形成光阻層；使用上述的光阻層、 進行微影蝕刻、將被加工物形成圖案；使用上述的去光阻 組成物除去在上述被加工物上殘留的光阻層。 爲此，通過使用上述組成物對光阻進行的剝離，能 夠使由於上述組成物而對被加工物的損傷最少化、光阻性 的殘留物殘留最少化。 10605pif.doc/008 8 此外，通過進行蝕刻或者灰化（ashing)等操作，使 用上述的組成物也能除去在加工室內殘留的殘留物。也就 是說，在淸洗上述加工室內的殘留物的洗淨溶液中，能充 分利用組成物。 以下是本發明比較詳細地說明。 上述組成物組成的說明如下。上述組成物不僅含有 烷醇胺、含有上述的嗎啉氧化物系化合物。具體地講，較 佳爲上述的院醇胺從單乙醇胺(monoethanolamine; MEA)和 單異丙醇胺（monoisopropanolamine)組成的族群中選擇至少 一種。特佳爲上述的單乙醇胺。而且，較佳爲上述嗎啉氧 化物系化合物從嗎啉氧化物（morpholine-oxide; MO)、N — 甲基—嗎啉氧化物(N-methyl morpholine-oxide; NMO)、以 及 N —甲基嗎啉—N —氧化物（N-methyl morpholine-N-oxide; NMMO)組成的族群中選擇至少一種，特別地，嗎啉 氧化物系化合物較佳爲N—甲基嗎啉-N-氧化物。 此外，上述的組成物中含有抑制劑。更具體地說， 上述抑制劑化合物較佳爲作爲螯合劑(chelating agent)的鄰 苯二酚（catechol)。此外，較佳爲上述組成物進一步含有二 甲基乙酿胺（dimethylacetamide; DMAC)或者N—甲基一 2 〜Q比H客院酮（N-methyl-2-pyrrolidine; NMP )。 因此，作爲一個例子，上述組成物由單乙醇胺、N-甲基嗎啉-N-氧化物、鄰苯二酚和去離子水構成，由單 乙醇胺、N-甲基嗎琳一N—氧化物、鄰苯二酚、去離子 水和二甲基乙醯胺構成，或是由單乙醇胺、N—甲基嗎啉 10605pif.doc/008 9 而較爲不佳。如果超過45重量％，上述的二甲基乙醯胺 的使用量就會增多而較爲不佳。因此，上述二甲基乙醯胺 的含量25〜45重量％，較佳爲30〜40重量％。上述的N — 甲基-2-吡喀烷酮的含量如果不到25重量％，上述組成 物的黏度就會增加而較爲不佳；如果上述N-甲基-2-吡喀烷酮的含量超過45重量％，上述的N-甲基一 2-吡 喀烷酮的使用量就會增多而較爲不佳。因此，上述N-甲 基—2-吡喀烷酮的含量爲25〜45重量％，較佳爲30〜40 重量％ 〇 上述組成物的黏度由於組成物含量的不同而有差 異。係能夠調整至10〜15cps的程度。這是爲了使用上述 嗎啉氧化物系化合物和爲了適當的添加上述的甲基乙醯胺 和上述的N-甲基一 2—吡喀烷酮。 實施方式： 以下參照附圖對本發明的較佳爲實施例詳細的進行 說明。 如第1A圖所示，準備形成有金屬層12的基板10。 金屬層12使用鋁(A1)、銅（Cu)、鉬(Mo)等金屬以形成。而 且，基板10是半導體裝置用基板或者平面顯示器用基板。 如第1B圖所示，在金屬層12的上面，使用光阻進 行塗佈形成光阻層14，上述塗佈層主要是採用旋轉塗佈法 進行的。 第1C圖所示，通過微影，在光阻層14上面形成光 阻圖案14a。藉此，表面露出預定部位的金屬層。具體的 10605pif.doc/008 11 591349 說明如下所示。 在上述光阻層的上面，爲了有選擇的對上述的光阻 層的預定部位進行曝光，***圖案化（patterning)的罩幕 圖案。而且，通過罩幕圖案，對上述的光阻層用像紫外光 或者X射線等這樣的光進行照射。上述光照射部位的光阻 層和上述光沒有照射部分的光阻層有不同的溶解度。而 且，使用顯影液除去上述光照射部分的光阻層（正型光 阻），因此，在光阻層上形成上述的光阻圖案。 如第1D圖所示，以光阻圖案i4a作爲蝕刻罩幕，對 上述露出部分的金屬層12進行蝕刻。 如第1E圖所示，對作爲蝕刻罩幕的光阻圖案Ma進 行光阻剝離，藉此，以使金屬層12形成具有開口部位的 金屬層圖案層i2a。上述的光阻剝離中，使用由院醇胺、 嗎啉氧化物系化合物、抑制劑化合物和去離子水構成的組 合物。具體地說，係能夠使用由單乙_胺、N-甲基嗎啉 - N -氧化物、鄰苯二酌和去離子水構成的組合物，使用 由單乙醇胺、N-甲基嗎啉一N—氧化物、鄰苯二酚、去 離子水以及二甲基乙醯胺構成的組成物或者使用由單乙醇 胺、N-甲基嗎啉一N-氧化物、鄰苯二酚、去離子水和N -甲基-2-吡喀烷酮構成的組成物。此外，能使用單乙 醇胺、嗎琳氧化物、鄰苯二酚、去離子水和N-甲基-2 -吡喀烷酮組成的組成物或者單乙醇胺、嗎啉氧化物、鄰 苯二酚、去離子水和二甲基乙醯胺組成的組成物。 因此，以所設定的形態正確地形成上述金屬圖案層。 10605pif.doc/008 12 當實施上述的光阻剝離操作時，上述的組成物對金屬圖案 層沒有影響。而且，通過完全地除去上述光阻圖案，在上 述金屬圖案層上面殘留不下光阻性的殘留物。 以下，對本發明的實施例進行詳細地說明。 第一實施例 在500ml燒杯中加入單乙醇胺30m卜鄰苯二酚12g， N—甲基嗎啉一N—氧化物24ml，去離子水24ml和N—甲 基-2-吡喀烷嗣30m卜進行混合，製造出去光阻組成物。 所製造的組成物的黏度是36分25秒。對上述組成物沿著 玻璃壁面流動時間和標準物質沿著上述的玻璃壁面的流動 時間進行測定後，根據對上述時間的差異進行比較，測定 出上述的黏度。 第二實施例 除去使用N-甲基嗎啉一 N-氧化物48ml和去離子 水48ml，通過與第一實施例相同的方法，製造出去光阻組 成物。將獲得的組成物的黏度用與第一實施例相同的方法 進行測定，是1小時31秒。 第三實施例 在500ml燒杯中加入單乙醇胺ISml，鄰苯二酚l2g， N —甲基嗎啉—N—氧化物36ml，去離子水36ml和N —甲 基-2-吡喀烷酮54ml，進行混合，製造出去光阻組成物。 採用上述第一實施例相同的方法對獲得的組成物的黏度進 行測定，是41分12秒。 第四實施例 10605pif.doc/008 13 在500mL·燒杯中加入單乙醇胺30m卜鄰苯二酚l2g， N—甲基嗎啉一 N—氧化物24ml，去離子水24ml和二甲基 乙醯胺54ml，進行混合，製造出去光阻組成物。採用上述 第一實施例相同的方法對獲得的組成物的黏度進行測定， 是33分22秒。 第五實施例 除去N —甲基嗎啉一 N —氧化物48ml、去離子水48ml 和二甲基乙醯胺30ml，採用與第四實施例相同的方法製造 出去光阻組成物，採用上述第一實施例相同的方法對獲得 的組成物的黏度進行測定，是56分49秒。 第六實施例 在500ml燒杯中加入單乙醇胺18m卜鄰苯二酚12g， N —甲基嗎啉一 N—氧化物36ml，去離子水36ml和二甲基 乙醯胺54ml，進行混合，製造出去光阻組成物。採用和上 述第一實施例相同的方法對獲得的組成物黏度進行測定， 是33分4秒。 第七實施例 在500ml燒杯中加入單乙醇胺30ml，鄰苯二酚Ug， 嗎啉氧化物12ml，去離子水36ml和N-甲基—2 -吡喀烷 酮30ml，進行混合，製造出去光阻組成物。採用上述第一 實施例相同的方法對獲得的組成物的黏度進行測定，是31 分10秒。 第八實施例 除去使用嗎啉氧化物24ml、去離子水24ml，採用與 10605pif.doc/008 14 第七實施例相同的方法製造去光阻組成物。 第九實施例 除去使用嗎啉氧化物36ml、去離子水12ml，採用與 第七實施例相同的方法製造去光阻組成物。 第十實施例 在500ml燒杯中加入單乙醇胺3〇m卜鄰苯二酚ug， N-甲基嗎啉一N —氧化物24ml，去離子水24ml和二甲基 乙醯胺30ml，進行混合，製造出去光阻組成物。採用上述 第一實施例相同的方法對獲得的組成物的黏度進行測定， 是33分20秒。 第十一實施例 在500ml燒杯中加入單乙醇胺18ml，鄰苯二酚12g， N-甲基嗎琳—N—氧化物24ml，去離子水12ml和N-甲 基-2-吡喀烷酮54m卜進行混合，製造出去光阻組成物。 採用上述第一實施例相同的方法對獲得的組成物的黏度進 行測定，是36分24秒。 第十二實施例 在500ml燒杯中加入單乙醇胺12ml，鄰苯二酚Kg， N —甲基嗎啉—N-氧化物19.2ml，去離子水4.8ml和N — 甲基-2-吡喀烷酮72ml，進行混合，製造出去光阻組成 物。採用上述第一實施例相同的方法對獲得的組成物的黏 度進行測定，是25分40秒。 光阻圖案的光阻剝離試驗。 第一試驗例 I0605pif.doc/008 15 將上述第一實施例的組成物的溫度調整到62〜68°C， 此外，在矽基板上形成具有介層洞的結構體，上述形成之 介層洞係具有以底面爲基準的〇.35μηι深度和0·30μπι的寬 度。 在具有上述介層洞的結構體形成中，係將用於蝕刻 罩幕的光阻圖案，以上述第一實施例的組成物進行光阻剝 離。具體地說，使用上述組成物，對上述的光阻圖案進行 一次10分鐘左右的光阻剝離，使用異丙醇，對上述基板 進行一次3分鐘左右的淸洗，使用去離子水，對上述基板 進行二次3分鐘左右的淸洗，並反復進行二次，此外，對 上述基板進行乾燥。 將介層洞部位垂直地切斷後，切斷部位在掃描電子 顯微鏡下進行確認。結果如第2Α圖和第2Β圖所示，能 夠確認在上述的介層洞部位上沒有殘留光阻性殘留物。而 且，上述第2Α圖是從上面所看到的介層洞。 第二試驗例 將上述第二實施例的組成物溫度調整到62〜68°C，此 外，在砂基板上形成具有金屬圖案和介層洞的結構體。形 成之金屬圖案係具有0·35μπι的高度和0·30μιη的寬度，上 述介層洞係形成與上述第一試驗例相類似的深度和寬度。 在上述結構體的形成中，除去使用上述第二實施例 的組成物，採用與第一試驗例相同的方法對光阻圖案進行 光阻剝離。 此外，對上述金屬圖案和介層洞部位進行垂直切斷 10605pif.doc/008 16 後，用掃描電子顯微鏡對切斷部位進行確認，結果，如第 3A圖和第3B圖所示，確認上述金屬圖案沒有受到損害。 上述第3A圖就是從上面看到的上述金屬圖案。上述第3B 圖是從下面看到的上述金屬圖案。此外，如第3C圖和第 3D圖所示，能確認在上述的介層洞部位上沒有殘留光阻 性殘留物。上述第3C圖是從上面看到的上述介層洞，上 述第3D圖是在下面所看到的上述介層洞。 第三試驗例 將上述第三實施例的組成物的溫度調整到62〜68t：， 此外，採用與上述第二試驗例相同的方法形成結構體。通 過與上述第二試驗例相同的方法形成結構體。上述金屬圖 案係形成與上述第二試驗例類似的高度和寬度。而且，上 述介層洞係形成與第二試驗例相類似的深度和寬度。 在上述結構體的形成中，除去使用上述第三實施例 的組成物，通過與第一試驗例相同的方法對光阻圖案進行 光阻剝離。 而且，通過與上述第二試驗例相同的方法對切斷部 位進行確認，結果如第4A圖和第4B圖所示，確認上述 的金屬圖案沒有受到損害。上述第4A圖是從上面看到的 上述金屬圖案。而且，如第4C圖所示，確認了在上述介 層洞部位上沒有殘留光阻性的殘留物。上述第4C圖是從 上面看到的上述介層洞。 第四試驗例 將上述第四實施例的組成物的溫度調整到62〜68°C， 10605pif.doc/008 17 此外，採用與上述第二試驗例相同的方法形成結構體。上 述金屬圖案係形成與上述第二試驗例類似的高度和寬度。 而且，上述介層洞係形成與第二試驗例相類似的深度和寬 度。 在上述結構體的形成中，除去使用上述第四實施例 的組成物，通過與上述第一試驗例相同的方法對光阻圖案 進行光阻剝離。 此外，通過與上述第二試驗例相同的方法對切斷部 位進行確認。結果如第5A圖和第5B圖所示，確認了上 述金屬圖案沒有受到損害。上述第5A圖是從上面看到的 上述金屬圖案、上述第5B圖是從下面看到的金屬圖案。 而且，如第5C圖和第5D圖所示，確認在上述介層洞部 位上沒有殘留光阻性的殘留物。上述第5C圖是在下面看 到的上述介層洞、上述第5D圖是從上面看到的上述介層 洞。 第五試驗例 將上述第五實施例的組成物的溫度調整到62〜68°C。 此外，採用與上述第二試驗例相同的方法形成結構體。上 述金屬圖案係形成與上述第二試驗例類似的高度和寬度。 而且，上述介層洞係形成與第二試驗例相類似的深度和寬 度。 在上述結構體的形成中，除去使用上述第五實施例 的組成物，通過與上述第一試驗例相同的方法對光阻圖案 進行光阻剝離。 10605pif.doc/008 此外，通過與上述第二試驗例相同的方法對切斷部 位進行確認。結果，如第6A圖和第6B圖所示，確認了 上述金屬圖案沒有受到損害。上述第6A圖是從上面看到 的上述金屬圖案、上述第6B圖是從下面看到的金屬圖案。 而且，如第6C圖和第6D圖所示，確認在上述介層洞部 位上沒有殘留光阻性的殘留物。上述第6C圖是在下面看 到的上述介層洞、上述第6D圖是從上面看到的介層洞。 第六試驗例 將上述第六實施例的組成物的溫度調整到62〜68°C。 此外，採用與上述第二試驗例相同的方法形成結構體。上 述金屬圖案係形成與上述第二試驗例類似的高度和寬度。 而且，上述介層洞係形成與第二試驗例相類似的深度和寬 度。 在上述結構體的形成中，除去使用上述第六實施例 的組成物，通過與上述第一試驗例相同的方法對光阻圖案 進行光阻剝離。 此外，通過與上述第二試驗例相同的方法對切斷部 位進行確認。結果，如第7A圖和第7B圖所示，確認了 上述金屬圖案沒有受到損害。上述第7A圖是從上面看到 的上述金屬圖案、上述第7B圖是從下面看到的金屬圖案。 而且，如第7C圖和第7D圖所不，確認在上述介層洞部 位上沒有殘留光阻性的殘留物。上述第7C圖是在下面看 到的上述介層洞、上述第7D圖是從上面看到的介層洞。 第七試驗例 10605pif.doc/008 19 591349 將上述第七實施例的組成物的溫度調整到62〜68。(：。 此外，採用與上述第二試驗例相同的方法形成結構體。上 述金屬圖案係形成與上述第二試驗例類似的高度和寬度。 而且’上述介層洞係形成與第二試驗例相類似的深度和寬 度。 在上述結構體的形成中，除去使用上述第七實施例 的組成物，通過與上述第一試驗例相同的方法對光阻圖案 進行光阻剝離。 此外，通過與上述第二試驗例相同的方法對切斷部 位進行確認。結果，如第8A圖和第8B圖所示，確認了 上述金屬圖案沒有受到損害。上述第8A圖是從上面看到 的上述金屬圖案、上述第8B圖是從下面看到的金屬圖案。 而且，如第8C圖和第8D圖所示，確認在上述介層洞部 位上沒有殘留光阻性的殘留物。上述第8C圖是在下面看 到的上述介層洞、上述8d是從上面看到的介層洞。 第八試驗例 將上述第八實施例的組成物的溫度調整到62〜68。(：。 此外’採用與上述第二試驗例相同的方法形成結構體。上 述金屬圖案係形成與上述第二試驗例類似的高度和寬度。 而且’上述介層洞係形成與第二試驗例相類似的深度和寬 度。 在上述結構體的形成中，除去使用上述第八實施例 的組成物’通過與上述第一試驗例相同的方法對光阻圖案 進行光阻剝離。 10605pif.doc/008 20 591349 此外，通過與上述第二試驗例相同的方法對切斷部 位進行確認。結果，如第9A圖和第9B圖所示，確認了 上述金屬圖案沒有受到損害。上述第9A圖是從上面看到 的上述金屬圖案、上述第9B圖是從下面看到的金屬圖案。 而且，如第9C圖和第9D圖所不，確認在上述介層洞部 位上沒有殘留光阻性的殘留物。上述第9C圖是在下面看 到的上述介層洞、上述第9D圖是從上面看到的介層洞。 第九試驗例 將上述第九實施例的組成物的溫度調整到62〜6VC， 此外，在矽基板上形成具有金屬圖案的結構體。上述金屬 圖案係形成與上述第二試驗例類似的高度和寬度。 在上述結構體的形成中，除去使用上述第九實施例 的組成物，通過與上述第一試驗例相同的方法對光阻圖案 進行光阻剝離。 此外，將上述金屬圖案部位垂直地切斷後，用掃描 電子顯微鏡對切斷部位進行確認，結果如第10A圖和第10B 圖所示，確認了上述金屬圖案沒有受到損害。上述第10A 圖是從上面看到的上述金屬圖案、上述第10B圖是從下面 看到的金屬圖案。 如上述的實施方式，使用含有上述嗎啉氧化物系化 合物的光阻組成物，對光阻進行去光阻時’使被加工物的 損傷最少化，不殘留光阻殘留物。 10605pif.doc/008 21 591349591349 发明 Description of the invention (The description of the invention should state: the technical field, prior art, contents, embodiments and drawings of the invention are briefly explained) Field of the invention The present invention relates to a photoresist removing composition and the use of the composition More specifically, the present invention relates to a composition for removing a photoresist used as a mask in lithography and a pattern forming method using the same. Prior Art Recently, with the spread of information media such as computers, semiconductor devices have developed rapidly. In terms of functions, high-speed semiconductors are required while high-capacity storage is required. For this reason, semiconductor devices are being developed toward manufacturing technologies that increase the degree of integration, dependency, and response speed. Therefore, as the main technology for improving the integration of semiconductor devices, the requirements for microfabrication techniques such as lithographic etching have become strict. The so-called lithography technology is to form a photoresist pattern by removing a predetermined portion of the photoresist layer by exposing and developing a photoresist layer using an organic photoresist on a substrate (containing a layer for forming a pattern). . An example of lithography is disclosed in US Patent Nos. 6200903 (Kim et al.) And 6214637 (Oh et al.). Furthermore, the etching step is performed by using the above-mentioned photoresist pattern as an etching mask. After the object to be processed is patterned, the above-mentioned photoresist pattern as an etching mask is peeled. The photoresist used in the above mask is peeled off by using a composition 10605pif.doc / 008 6 The composition is composed of an inhibitor that dissolves the photoresist, in order to prevent the composition from being applied to the object to be processed. It consists of an inhibitor of damage and an inhibitor to remove fine photoresistive residues. The above-mentioned composition is specifically described as follows. As a substance that dissolves the photoresist, acetone, 2-propanol, methylethylketine (MEK), and monoehanolamine are contained. MEA), N-methyl-2-pyrrolidine (N-methyl-2-pyrrolidine; NMP), methylacetate (EA), methanol or methylisobytyketone; MIK) and so on. In order to prevent damage to the workpiece due to the above composition, a chelating agent such as catechol is contained. In addition, the above-mentioned fine photoresistive residue is removed, and it contains dimethylsulfoxide (DMSO), dimethylacetamide (DMAC), ethylcellosolveacetate (ECA), butylene Methylethoxyethanolacetate (BCA), methylcellosolveacetate (MCA), or N-butylacetate (NBA), etc. Examples of compositions such as N-methyl-2-pyrrolidone and the like are disclosed in U.S. Patent Nos. 6,218,087 and 621 1 127, and the like. However, the photoresist peeling using the conventional composition 'often causes damage to the processed object. In particular, when the processed product is a metal, the above-mentioned damage occurs violently. Although the above-mentioned catechol 10605pif.doc / 008 7 and the like are used, the composition etches the processed product. In addition, although photoresist was used in the photoresist peeling, residues frequently occurred because the photoresist was not completely removed. In addition, in the composition, when monoethanolamine is used, the viscosity is as high as 34 cps. Therefore, to reduce the viscosity of the composition to i7cps, it is necessary to add more inhibitors. Therefore, the reason for increasing the amount of the composition used and shortening the life of the composition in the above-mentioned photoresist peeling is formed. Therefore, it is required to develop a photoresist removing composition capable of minimizing damage to a processed object, leaving no photoresistive residue, completely removing the above photoresist, and reducing viscosity. SUMMARY OF THE INVENTION A first object of the present invention is to provide a photoresist removing composition so as to minimize damage to an object to be processed, not to leave photoresistive residues, and to remove photoresist. It is a second object of the present invention to provide a method for accurately forming a workpiece by a set pattern. To achieve the above object, the composition of the present invention contains an alkanolamine, a morpholine oxide-based compound, an inhibitor compound, and deionized water. In order to achieve the above object, the method for forming a pattern of the present invention includes: using a photoresist on a processed object to form a photoresist layer; using the above photoresist layer, performing lithographic etching, and patterning the processed object; The photoresist composition removes the photoresist layer remaining on the workpiece. For this reason, by peeling the photoresist using the composition, it is possible to minimize damage to the workpiece due to the composition and minimize photoresistive residues. 10605pif.doc / 008 8 In addition, by performing operations such as etching or ashing, residues remaining in the processing chamber can be removed by using the above-mentioned composition. That is, the composition can be fully utilized in the cleaning solution which rinses the residue in the processing chamber. The following is a more detailed description of the present invention. The composition composition is described below. The composition contains not only an alkanolamine, but also the morpholine oxide-based compound described above. Specifically, it is preferable that at least one of the aforementioned alcohol amines is selected from the group consisting of monoethanolamine (MEA) and monoisopropanolamine. Particularly preferred is the aforementioned monoethanolamine. The morpholine oxide-based compound is preferably selected from morpholine-oxide (MO), N-methyl-morpholine-oxide (NMO), and N-methyl At least one selected from the group consisting of morpholine-N-oxide (N-methyl morpholine-N-oxide; NMMO). In particular, the morpholine oxide-based compound is preferably N-methylmorpholine-N-oxide . Moreover, the said composition contains an inhibitor. More specifically, the above-mentioned inhibitor compound is preferably catechol as a chelating agent. In addition, it is preferable that the composition further contains dimethylacetamide (DMAC) or N-methyl-2-pyrrolidine (NMP). Therefore, as an example, the above composition is composed of monoethanolamine, N-methylmorpholine-N-oxide, catechol, and deionized water, and is composed of monoethanolamine, N-methylmorphine-N-oxide , Catechol, deionized water, and dimethylacetamide, or monoethanolamine, N-methylmorpholine 10605pif.doc / 008 9 and less favorable. If it exceeds 45% by weight, the use amount of the dimethylacetamide is increased and becomes unfavorable. Therefore, the content of the dimethylacetamide is 25 to 45% by weight, and preferably 30 to 40% by weight. If the content of the above-mentioned N-methyl-2-pyrrolidone is less than 25% by weight, the viscosity of the above-mentioned composition will increase and it will be relatively unfavorable. When the content is more than 45% by weight, the use amount of the above-mentioned N-methyl-2-pyrrolidone will increase and become unfavorable. Therefore, the content of the N-methyl-2-pyrrolidone is 25 to 45% by weight, preferably 30 to 40% by weight. The viscosity of the above composition varies depending on the content of the composition. The system can be adjusted to a level of 10 to 15 cps. This is to use the above-mentioned morpholine oxide-based compound and to appropriately add the above-mentioned methylacetamide and the above-mentioned N-methyl-2-pyrrolidone. Embodiments: Preferred embodiments of the present invention will be described in detail below with reference to the drawings. As shown in FIG. 1A, the substrate 10 on which the metal layer 12 is formed is prepared. The metal layer 12 is formed using a metal such as aluminum (A1), copper (Cu), and molybdenum (Mo). The substrate 10 is a substrate for a semiconductor device or a substrate for a flat display. As shown in Fig. 1B, a photoresist is applied on the metal layer 12 to form a photoresist layer 14. The above-mentioned coating layer is mainly formed by a spin coating method. As shown in FIG. 1C, a photoresist pattern 14a is formed on the photoresist layer 14 by lithography. Thereby, the metal layer of a predetermined part is exposed on the surface. The specific 10605pif.doc / 008 11 591349 is described below. On the photoresist layer, a patterning mask pattern is inserted in order to selectively expose a predetermined portion of the photoresist layer. The photoresist layer is irradiated with light such as ultraviolet light or X-rays through a mask pattern. The photoresist layer in the light-irradiated portion has different solubility from the photoresist layer in the light-irradiated portion. In addition, the photoresist layer (positive type photoresist) of the light-irradiated portion was removed using a developing solution, and thus the above-mentioned photoresist pattern was formed on the photoresist layer. As shown in Fig. 1D, the exposed metal layer 12 is etched using the photoresist pattern i4a as an etching mask. As shown in FIG. 1E, the photoresist pattern Ma as an etching mask is subjected to photoresist peeling, thereby forming the metal layer 12 with a metal layer pattern layer i2a having an opening portion. In the above-mentioned photoresist peeling, a composition consisting of an alcohol amine, a morpholine oxide-based compound, an inhibitor compound, and deionized water is used. Specifically, it is possible to use a composition composed of monoethylamine, N-methylmorpholine-N-oxide, phthalate, and deionized water, and to use monoethanolamine, N-methylmorpholine- Composition consisting of N-oxide, catechol, deionized water, and dimethylacetamide, or using monoethanolamine, N-methylmorpholine-N-oxide, catechol, and deionized water And N-methyl-2-pyrrolidone. In addition, a composition composed of monoethanolamine, morphine oxide, catechol, deionized water, and N-methyl-2-pyrrolidone, or monoethanolamine, morpholine oxide, catechol, A composition consisting of deionized water and dimethylacetamide. Therefore, the above-mentioned metal pattern layer is accurately formed in a set form. 10605pif.doc / 008 12 When the above-mentioned photoresist peeling operation is performed, the above-mentioned composition has no effect on the metal pattern layer. Further, by completely removing the photoresist pattern, photoresistive residues remain on the metal pattern layer. Hereinafter, examples of the present invention will be described in detail. First Example In a 500 ml beaker, add 30 g of monoethanolamine, 12 g of catechol, 24 ml of N-methylmorpholine-N-oxide, 24 ml of deionized water, and 30 m of N-methyl-2-pyrrolidine. They are mixed to produce a photoresist composition. The viscosity of the produced composition was 36 minutes and 25 seconds. After measuring the flow time of the composition along the glass wall surface and the flow time of the reference material along the glass wall surface, the difference in the time is compared to determine the viscosity. Second Example A photoresist composition was manufactured by the same method as in the first example except that 48 ml of N-methylmorpholine-N-oxide and 48 ml of deionized water were used. The viscosity of the obtained composition was measured by the same method as in the first example, and it was 1 hour and 31 seconds. In the third embodiment, a 500 ml beaker was charged with monoethanolamine ISml, catechol 12 g, N-methylmorpholine-N-oxide 36 ml, deionized water 36 ml, and N-methyl-2-pyrrolidone 54 ml. They are mixed to produce a photoresist composition. The viscosity of the obtained composition was measured in the same manner as in the first example, and it was 41 minutes and 12 seconds. Fourth Example 10605pif.doc / 008 13 In a 500 mL beaker, add 30 g of monoethanolamine, 12 g of catechol, 24 ml of N-methylmorpholine-N-oxide, 24 ml of deionized water, and dimethylacetamide. 54 ml were mixed to produce a photoresist composition. The viscosity of the obtained composition was measured by the same method as in the first example, and it was 33 minutes and 22 seconds. In the fifth embodiment, 48 ml of N-methylmorpholine-N-oxide, 48 ml of deionized water, and 30 ml of dimethylacetamide were manufactured by the same method as in the fourth embodiment. The viscosity of the obtained composition was measured in the same manner as in one example, and it was 56 minutes and 49 seconds. Sixth Example In a 500 ml beaker, add 18 g of monoethanolamine, 12 g of catechol, 36 ml of N-methylmorpholine-N-oxide, 36 ml of deionized water, and 54 ml of dimethylacetamide, and mix to make them. Photoresist composition. The viscosity of the obtained composition was measured by the same method as in the first example, and it was 33 minutes and 4 seconds. Seventh Example: In a 500 ml beaker, add 30 ml of monoethanolamine, catechol Ug, 12 ml of morpholine oxide, 36 ml of deionized water, and 30 ml of N-methyl-2-pyrrolidone, and mix to make a photoresist.组合 物。 Composition. The viscosity of the obtained composition was measured by the same method as in the first example, and it was 31 minutes and 10 seconds. Eighth Example Except the use of 24 ml of morpholine oxide and 24 ml of deionized water, a photoresist removing composition was produced in the same manner as in the seventh example of 10605pif.doc / 008 14. Ninth Example Except for using 36 ml of morpholine oxide and 12 ml of deionized water, a photoresist removing composition was produced in the same manner as in the seventh example. Tenth Example: In a 500 ml beaker, 30 ml of monoethanolamine, catechol ug, 24 ml of N-methylmorpholine-N-oxide, 24 ml of deionized water, and 30 ml of dimethylacetamide were mixed and mixed. Fabricate a photoresist composition. The viscosity of the obtained composition was measured by the same method as in the first example, and it was 33 minutes and 20 seconds. Eleventh Example In a 500 ml beaker, 18 ml of monoethanolamine, 12 g of catechol, 24 ml of N-methylmorpholin-N-oxide, 12 ml of deionized water, and 54 m of N-methyl-2-pyrrolidone Mix it to make a photoresist composition. The viscosity of the obtained composition was measured in the same manner as in the first example, and it was 36 minutes and 24 seconds. Twelfth Example In a 500 ml beaker, 12 ml of monoethanolamine, Kg of catechol, 19.2 ml of N-methylmorpholine-N-oxide, 4.8 ml of deionized water, and N-methyl-2-pyrrolidine 72 ml of ketone were mixed to produce a photoresist composition. The viscosity of the obtained composition was measured by the same method as in the first example, and it was 25 minutes and 40 seconds. Photoresist peel test for photoresist pattern. First Test Example I0605pif.doc / 008 15 The temperature of the composition of the first embodiment was adjusted to 62 to 68 ° C. In addition, a structure having a via hole was formed on a silicon substrate, and the via hole formed above was formed. The system has a depth of 0.35 μm and a width of 0.30 μm based on the bottom surface. In the formation of the structure having the above-mentioned via hole, the photoresist pattern used for etching the mask is subjected to photoresist peeling using the composition of the first embodiment. Specifically, using the composition, photoresist peeling is performed on the photoresist pattern for about 10 minutes, isopropyl alcohol is used to rinse the substrate for about 3 minutes, and the substrate is deionized water. The rinsing was carried out twice for about 3 minutes, and repeated twice, and the substrate was dried. After the via hole portion was cut vertically, the cut portion was confirmed under a scanning electron microscope. As a result, as shown in Figs. 2A and 2B, it was confirmed that no photoresistive residue remained at the above-mentioned via hole portion. Moreover, the above-mentioned Fig. 2A is a via hole as seen from above. Second test example The temperature of the composition of the second embodiment was adjusted to 62 to 68 ° C. In addition, a structure having a metal pattern and a via hole was formed on the sand substrate. The formed metal pattern has a height of 0.35 μm and a width of 0.30 μm. The above-mentioned interlayer hole system has a depth and a width similar to those of the first test example. In the formation of the above-mentioned structure, the composition using the second embodiment is removed, and the photoresist pattern is subjected to photoresist peeling in the same manner as in the first test example. In addition, after the metal pattern and the interstitial hole portion were cut vertically 10605pif.doc / 008 16, the cut portion was confirmed with a scanning electron microscope. As a result, the metal was confirmed as shown in FIGS. 3A and 3B. The pattern was not damaged. The above-mentioned Fig. 3A is the above-mentioned metal pattern seen from above. Figure 3B above is the metal pattern seen from below. In addition, as shown in Figs. 3C and 3D, it was confirmed that no photoresist residue was left on the above-mentioned via hole portion. The above-mentioned Fig. 3C is the above-mentioned via hole as seen from above, and the above-mentioned 3D picture is the above-mentioned via hole as seen below. Third Test Example The temperature of the composition of the third example was adjusted to 62 to 68 t :, and a structure was formed by the same method as that of the second test example. A structure was formed by the same method as the above-mentioned second test example. The above-mentioned metal pattern has a height and a width similar to those of the above-mentioned second test example. Moreover, the above-mentioned mesoporous system has a depth and a width similar to those of the second test example. In the formation of the above structure, the composition using the third embodiment is removed, and the photoresist pattern is subjected to photoresist peeling in the same manner as in the first test example. Further, the cut position was confirmed by the same method as the above-mentioned second test example. As a result, as shown in Figs. 4A and 4B, it was confirmed that the above-mentioned metal pattern was not damaged. The above-mentioned Fig. 4A is the above-mentioned metal pattern as seen from above. Furthermore, as shown in Fig. 4C, it was confirmed that no photoresist residue was left on the via hole portion. The above-mentioned Fig. 4C is the above-mentioned via hole as seen from above. Fourth Test Example The temperature of the composition of the fourth example was adjusted to 62 to 68 ° C, 10605 pif.doc / 008 17 In addition, a structure was formed by the same method as the second test example. The above-mentioned metal pattern has a height and a width similar to those of the above-mentioned second test example. Moreover, the above-mentioned interstitial cavity system is formed to a depth and a width similar to those of the second test example. In the formation of the above structure, the composition using the fourth embodiment is removed, and the photoresist pattern is subjected to photoresist peeling in the same manner as in the first test example. In addition, the cut position was confirmed by the same method as the second test example. As a result, as shown in Figs. 5A and 5B, it was confirmed that the metal pattern was not damaged. Fig. 5A is the metal pattern seen from above, and Fig. 5B is the metal pattern seen from below. Further, as shown in Figs. 5C and 5D, it was confirmed that no photoresist residue was left on the via hole portion. The above-mentioned Fig. 5C is the above-mentioned via hole seen from below, and the above-mentioned 5D-picture is the above-mentioned via hole seen from above. Fifth Test Example The temperature of the composition of the fifth embodiment was adjusted to 62 to 68 ° C. In addition, a structure was formed by the same method as the above-mentioned second test example. The above-mentioned metal pattern has a height and a width similar to those of the above-mentioned second test example. Moreover, the above-mentioned interstitial cavity system is formed to a depth and a width similar to those of the second test example. In the formation of the above-mentioned structure, the composition using the fifth embodiment is removed, and the photoresist pattern is subjected to photoresist peeling in the same manner as in the first test example. 10605pif.doc / 008 In addition, the cut position was confirmed by the same method as the second test example described above. As a result, as shown in Figs. 6A and 6B, it was confirmed that the metal pattern was not damaged. Fig. 6A is the metal pattern as seen from above, and Fig. 6B is the metal pattern as seen from below. Further, as shown in Figs. 6C and 6D, it was confirmed that no photoresist residue was left at the via hole portion. The above-mentioned FIG. 6C is the above-mentioned via hole, and the above-mentioned FIG. 6D is the above-mentioned via hole. Sixth Test Example The temperature of the composition of the sixth embodiment was adjusted to 62 to 68 ° C. In addition, a structure was formed by the same method as the above-mentioned second test example. The above-mentioned metal pattern has a height and a width similar to those of the above-mentioned second test example. Moreover, the above-mentioned interstitial cavity system is formed to a depth and a width similar to those of the second test example. In the formation of the structure, the composition using the sixth embodiment is removed, and the photoresist pattern is subjected to photoresist peeling in the same manner as in the first test example. In addition, the cut position was confirmed by the same method as the second test example. As a result, as shown in Figs. 7A and 7B, it was confirmed that the metal pattern was not damaged. Fig. 7A is the metal pattern as viewed from above, and Fig. 7B is the metal pattern as viewed from below. Furthermore, as shown in Figs. 7C and 7D, it was confirmed that no photoresist residue was left on the via hole portion. The above-mentioned Fig. 7C is the above-mentioned via hole, and the above-mentioned Fig. 7D is the above-mentioned via hole. Seventh Test Example 10605pif.doc / 008 19 591349 The temperature of the composition of the seventh embodiment is adjusted to 62 to 68. (:. In addition, the structure was formed by the same method as the above-mentioned second test example. The above-mentioned metal pattern system has a height and a width similar to that of the above-mentioned second test example. Furthermore, the formation of the above-mentioned interlayer hole system is similar to that of the second test example. Similar depth and width. In the formation of the above structure, the composition of the seventh embodiment is removed, and the photoresist pattern is peeled off by the same method as that of the first test example. In the same way as in the two test examples, the cut portion was confirmed. As a result, it was confirmed that the metal pattern was not damaged as shown in FIG. 8A and FIG. 8B. The above FIG. 8A is the metal pattern, the Fig. 8B is a metal pattern seen from below. Also, as shown in Figs. 8C and 8D, it is confirmed that no photoresist residue is left on the via hole portion. The above 8C figure is viewed from below The above-mentioned via holes and the above 8d are the via holes seen from above. Eighth Test Example The temperature of the composition of the eighth embodiment was adjusted to 62 to 68. The second test example forms a structure in the same way. The metal pattern system has a height and a width similar to those of the second test example. Furthermore, the above-mentioned via hole system has a depth and a width similar to those of the second test example. In the formation of the above structure, the composition using the above-mentioned eighth embodiment is removed, and the photoresist pattern is peeled off by the same method as in the first test example. 10605pif.doc / 008 20 591349 In the two test examples, the cut portion was confirmed in the same manner. As a result, it was confirmed that the metal pattern was not damaged as shown in FIG. 9A and FIG. 9B. The above FIG. 9A is the metal pattern, the Fig. 9B is a metal pattern seen from below. Also, as shown in Figs. 9C and 9D, it is confirmed that no photoresist residue is left on the via hole portion. The above 9C picture is viewed from below The above-mentioned via hole and the above 9D diagram are the via holes seen from above. Ninth Test Example The temperature of the composition of the ninth embodiment was adjusted to 62 to 6 VC. A structure having a metal pattern is formed on the substrate. The metal pattern is formed to have a height and a width similar to those of the second test example. In the formation of the structure, the composition using the ninth embodiment is removed, In the same way as in a test example, the photoresist pattern was subjected to photoresist peeling. In addition, after the metal pattern portion was cut vertically, the cut portion was confirmed with a scanning electron microscope, and the results are shown in FIG. It was confirmed that the above-mentioned metal pattern was not damaged. The above-mentioned FIG. 10A is the above-mentioned metal pattern seen from above, and the above-mentioned FIG. 10B is the above-mentioned metal pattern seen from below. The photoresist composition of the compound, when the photoresist is de-photoresisted, minimizes damage to the processed object and does not leave photoresist residues. 10605pif.doc / 008 21 591349
第一至第四比較例 組成物條件 是否損傷 被加工物 是否殘留 光阻殘留 物 第一比較例 單乙醇胺45.05重 量％ 鄰苯二酚20重量 % 去離子水34.95重 量％ 0 0 第二比較例 單乙醇胺41.61重 量％ 鄰苯二酚19.97重 量％ N一甲基嗎琳一 N —氧化物3.47重量 % 去離子水34.95重 量％ Δ 0 第三比較例 單乙醇胺54.55重 量％ 鄰苯二酚1197重 量％ N —甲基嗎啉一 N -氧化物9.09重量 % 去離子水9.09重量 % X X 第四比較例 單乙醇胺27.03重 量％ 鄰苯二酚20重量 % N一甲基嗎琳一 N 一氧化物18.02重 量％ 去離子水34.95重 量？6 X X 10605pif.doc/008 22 591349 如上述表1所示，在第三至第四比較例時，能夠確 認使被加工物受到的損傷最少化、不存在光阻性的殘留 物。 特別’在第一至第四比較例時，將含有使用上述組 成物進行光阻剝離的基板的介層洞和金屬圖案的部位垂直 切斷後，用掃描電子顯微鏡進行確認。 結果’如第11A圖和第iiB圖所示（第四比較例）， 能夠確認上述金屬圖案沒有損傷。如第11C圖所示，能夠 確認在上述介層洞上沒有殘留光阻性殘留物。 另一方面，如第12A圖和第12B圖所示（第一比較 例），能夠確認上述金屬圖案受到損傷。如第12C圖所示， 能夠確認在上述介層洞上殘留光阻性殘留物。 以上，本發明的實施例進行了詳細地說明，但並不 限定於本發明，如果在本發明所屬的技術領域中具有一般 的知識，可以不離開本發明的精神和思想，對本發明的實 施例進行修改和變更。 發明的效果 通過本發明，使用作爲去光阻組成物的嗎啉氧化物 系化合物，使在上述光阻剝離中發生的被加工物的損傷減 少到最少、光阻性殘留物的殘留量最少。因此，使在光阻 剝離中發生的不良達到最少。因此，能希望獲得正確形成 細微圖案的效果。 而且，爲了使組成物具有低的黏度，能使上述組成 I0605pif.doc/008 23 物的消耗最少化。藉此，通過對上述組成物進行處理，不 僅可積極地處理環境問題，而且能夠期待獲得經濟上的利 益。 圖式簡單說明 第1A圖至第1E圖是對使用本發明組成物的圖案形 成方法進行說明的斷面圖。 第2A圖至第2B圖是表示在形成具有介層窗(via hole) 結構體時，使用由第一實施例的方法所製造的組成物，對 作爲蝕刻罩幕的光阻圖案進行光阻剝離的結果照片。 第3A圖至第3D圖是表示在形成具有金屬圖案和介 層洞的結構體時，使用由第二實施例的方法所製造的組成 物，對作爲蝕刻罩幕的光阻圖案進行光阻剝離的結果照 片。 第4A圖至第4C圖是表示在形成具有金屬圖案和介 層洞的結構體時，使用由第三實施例的方法所製造的組成 物，對作爲蝕刻罩幕的光阻圖案進行光阻剝離的結果照 片。 第5A圖至第5D圖是表示在形成具有金屬圖寒和介 層洞的結構體時，使用由第四實施例的方法所製造的組成 物，對作爲蝕刻罩幕的光阻圖案進行光阻剝離的，結果:照 片。 第6A圖至第6D圖是表示在形成具有金屬圖案和介 層洞的結構體時，使用由第五實施例的方法所製造的組成 物，對作爲蝕刻罩幕的光阻圖案進行光阻剝離的結果:照 10605pif.doc/008 24 591349 片。 第7A圖至第7C圖是表示在形成具有金屬圖案和介 層洞的結構體時，使用由第六實施例的方法所製造的組成 物，對作爲蝕刻罩幕的光阻圖案進行光阻剝離的結果照 片。 第8A圖至第8D圖是表示在形成具有金屬圖案和介 層洞的結構體時，使用由第七實施例昀方法所製造的組成 物，對作爲鈾刻罩幕的光阻圖案進行光阻剝離的結果照 片。 第9A圖至第9D圖是表示在形成具有金屬圖案和介 層洞的結構體時，使用由第八實施例的方法所製造的組成 物，對作爲蝕刻罩幕的光阻圖案進行光阻剝離的結果照 片。 第10A圖至第10B圖是表示在形成具有金屬圖案的 結構體時，使用由第九實施例的方法所製造的組成物，對 作爲蝕刻罩幕的光阻圖案進行光阻剝離的結果照片。 第11A圖至第11C圖是說明第四比較例的照片。 第12A圖至第12D圖是說明第一比較例的照片。 圖式標示說明： 10 :基板 12 :金屬層 14 :光阻層 拾、申請專利範圍 10605pif.doc/008 25Whether the composition conditions of the first to fourth comparative examples are damaged or whether photoresist residues remain in the processed object. The first comparative example is monoethanolamine 45.05% by weight, catechol 20% by weight, deionized water 34.95% by weight, and 0 0. Ethanolamine 41.61% by weight catechol 19.97% by weight N-methylmorphine-N —oxide 3.47% by weight deionized water 34.95% by weight Δ 0 Third comparative example monoethanolamine 54.55% by weight catechol 1197% by weight N —Methylmorpholine-N-oxide 9.09% by weight Deionized water 9.09% by weight XX Fourth Comparative Example Monoethanolamine 27.03% by weight Catechol 20% by weight N-Methylmorphine-N Monooxide 18.02% by weight Deionized water 34.95 weight? 6 X X 10605pif.doc / 008 22 591349 As shown in Table 1 above, in the third to fourth comparative examples, it was confirmed that the damage to the workpiece was minimized and that no photoresistive residue was present. In particular, in the first to fourth comparative examples, a portion containing a via hole and a metal pattern of a substrate subjected to photoresist peeling using the above composition was cut vertically, and then confirmed with a scanning electron microscope. As a result, as shown in FIGS. 11A and iiB (fourth comparative example), it was confirmed that the metal pattern was not damaged. As shown in Fig. 11C, it was confirmed that no photoresist residue was left on the via hole. On the other hand, as shown in Figs. 12A and 12B (first comparative example), it was confirmed that the metal pattern was damaged. As shown in FIG. 12C, it was confirmed that a photoresist residue remained on the via hole. In the above, the embodiments of the present invention have been described in detail, but are not limited to the present invention. If you have general knowledge in the technical field to which the present invention belongs, the embodiments of the present invention can be made without departing from the spirit and idea of the present invention. Make modifications and changes. Effects of the Invention According to the present invention, the use of a morpholine oxide-based compound as a photoresist-removing composition minimizes damage to a workpiece that occurs during the photoresist peeling and minimizes the residual amount of photoresistive residues. Therefore, the occurrence of defects in photoresist peeling is minimized. Therefore, the effect of forming a fine pattern can be expected. Furthermore, in order to make the composition have a low viscosity, the consumption of the above-mentioned composition I0605pif.doc / 008 23 can be minimized. By processing the above-mentioned composition, not only can environmental issues be actively addressed, but also economic benefits can be expected. Brief Description of Drawings Figs. 1A to 1E are cross-sectional views illustrating a pattern forming method using the composition of the present invention. FIGS. 2A to 2B show photoresist peeling of a photoresist pattern as an etching mask using a composition manufactured by the method of the first embodiment when forming a structure having a via hole. Result photos. FIGS. 3A to 3D show the photoresist peeling of the photoresist pattern as an etching mask using the composition produced by the method of the second embodiment when forming a structure having a metal pattern and a via hole. Result photos. FIGS. 4A to 4C show the photoresist peeling of the photoresist pattern as an etching mask using the composition produced by the method of the third embodiment when forming a structure having a metal pattern and a via hole. Result photos. 5A to 5D are diagrams showing the use of a composition manufactured by the method of the fourth embodiment to form a photoresist pattern as an etching mask when forming a structure having a metal pattern and a via hole. Peeling, result: photo. FIGS. 6A to 6D show the photoresist peeling of the photoresist pattern as an etching mask using the composition manufactured by the method of the fifth embodiment when forming a structure having a metal pattern and a via hole. Results: Photo according to 10605pif.doc / 008 24 591349. FIGS. 7A to 7C show the photoresist peeling of the photoresist pattern as an etching mask using the composition produced by the method of the sixth embodiment when forming a structure having a metal pattern and a via hole. Result photos. FIGS. 8A to 8D show the photoresist pattern of the photoresist pattern used as a mask for uranium engraving using the composition manufactured by the method of the seventh embodiment when forming a structure having a metal pattern and a via hole. Photo of peeling results. FIGS. 9A to 9D show the photoresist peeling of the photoresist pattern as an etching mask using the composition manufactured by the method of the eighth embodiment when forming a structure having a metal pattern and a via hole. Result photos. Figures 10A to 10B are photographs showing the results of photoresist peeling of a photoresist pattern as an etching mask using a composition manufactured by the method of the ninth embodiment when a structure having a metal pattern is formed. 11A to 11C are photographs illustrating a fourth comparative example. 12A to 12D are photographs illustrating a first comparative example. Description of the graphical symbols: 10: substrate 12: metal layer 14: photoresist layer 10605pif.doc / 008 25