587276 A7 B7 五、發明説明（ 發明領域： .......f (請先閲讀背面之注意事項再填寫本頁) 本發明係有關於-種晶圓清洗裝置，特別是有關於一 種具有緩衝室與清洗室，且緩衝室之截面積遠大於清洗室 :截面積之晶圓清洗裝置，其中欲清洗之晶圓係置於“ 至中’且緩衝室與清洗室連接之鉛直位置愈低則效果意 好。 發明背景： 隨著積體電路尺寸的日益縮小，以及層數的日益轉 加’半導體晶圓上的微粒為何產生以及如何去除已成為键 改善積體電路的良率需面對的一個重要課題。而微粒係彦 生於製程中的各個步驟，例如，蝕刻步驟或研磨步驟，且 微粒必須從晶圓上予以去除以避免產生缺陷或可靠度的問 題。 經濟部智慧財產局員工消費合作社印製 傳統上，欲自半導體晶圓上去除微粒有許多不同形式 的做法。用來去除微粒最一般性的做法之一是使用旋轉_沖 洗-乾燥（Spin-Rinse.Dry ; SRD)製程。在旋轉.沖洗-乾燥製 程中，液體（例如水或酒精）喷灑至旋轉中的晶圓。結合旋 轉力與流體磨擦力可將微粒帶離晶圓表面。在沖洗步驟之 後，接著藉著旋轉而使晶圓達到乾燥的目的。雖然旋轉-沖 洗-乾燥製程廣泛地用於半導體製造中，但是此技術的缺點 為，當欲去除的微粒之半徑愈來愈小時，去除微粒或清洗 晶圓的效果也隨著降低。上述去除微粒之旋轉力係與微粒 的半徑之二次方成正比’而用來去除微粒之流體磨擦力與 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 587276 A7 B7 五、發明説明（ 微粒的半徑之：次方成正比。因&，對於微小的次微米微 粒而言，旋轉-沖洗-乾燥製程並不是可將微粒完全去除之 方法。 至於，其它去除微粒之方法也有其限制。例如，超音 波清诜為一種浸入式的清洗製程，其中晶圓並不旋轉，而 疋浸入液體浴池中’且浴池中的液體進行超音波振盪。然 而，用來去除晶圓上微粒之力量再度由於微粒的半徑縮小 而減弱，如同在旋轉-沖洗·乾燥製程中的情況一般。 另一種習知用來去除微粒之技術係基於兩種流體間的 表面能量之差異。例如，可將兩種流體（如異丙醇與水）同 時置入浴池中。然後，將晶圓浸泡於浴池中。當晶圓上的 微粒到達浴池中兩種液體間的介面時，兩種液體與微粒間 的表面張力差會使微粒升起或被帶離晶圓。此技術之問題 在於，僅有少數溶液可達到所需的表面能量差，而且這些 少數溶液所產生的力量並不足以去除晶圓表面上的微粒。 此外’上述晶圓清洗技術的其它缺點則與是否能以準 時且划算的方式製造出半導體裝置有關。這些清洗技術中 一般包括需事前講買與事後丟棄的大量化學物質。因此， 晶圓清洗製程中需要的是能夠有效地去除更小的微粒之裝 置與方法’且又能具有最少的製程時間、廢棄化學物質、 以及設備成本。 無論是上述何種清洗技術，一般皆可包括整批式 (Batch Type)或單晶圓旋轉式（Single wafer Spin-On)兩大類 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公變) (請先閱讀背面之注意事項、再場寫本頁) 裝. -訂· 經濟部智慧財產局員工消費合作社印製 587276 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（ :清洗裝置。請參考第1圖所缘示之習知整批式晶圓清洗 、置^不意圖。整批式晶圓清洗裝置10包括清洗槽20、 入口管路30、以及出口管路40等元件。入口管路3〇貫穿 ^洗槽20之一表面’而出口管路4〇則貫穿清洗槽2〇之另 -表面。清洗製程進行時，先將_整批晶圓5〇，如13片 或25片’置於清洗槽2〇中。然後，如箭號6〇所示，純水' 鼠氣、與化學流體由入口管路30進入清洗槽2〇中以帶走 晶® 50表面之微粒。接著’此化學流體如箭號所示由 出口管路4〇流出，並流經微粒過遽裝置（未繪示）與循環栗 (未繪示)後可再由如箭號60所示由入口管路3〇進入清洗 槽20中而循環使用。此種整批式晶圓清洗裝置之優點 為：具有較佳的製程環境與微粒控制能力、化學流體與純 水的消耗量較少、以及設備機動調整之彈性度較高。而其 缺點則在於，產能較低且晶圓50間仍會發生互相污染之情 況。 ’、 、請接著參考第2圖所繪示之習知單晶圓旋轉式晶圓清 洗裝置之示意圖。第2圖中的單晶圓旋轉式晶圓清洗裝置 100包括旋轉夾盤110以及喷嘴120等元件。清洗製程進 行前，需先將單片晶圓130置於旋轉夾盤11〇之表面140 上’並以適當機構（未繪示）固定晶圓13〇。接著，啟動喷嘴 1 20之往復運動功能與旋轉夾盤丨丨〇之旋轉功能。清洗製 程進行時，如箭號1 7 0所示，晶圓1 3 〇與旋轉夾盤1 1 〇係 繞著旋轉軸1 8 0同時進行旋轉運動。同時，噴嘴1 2 0喷灑 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .............•裝.........、玎.........參 (請先閲讀背面之注意事項再填寫本頁) 587276 A7 __B7 五、發明説明（） 清洗溶液150(包括化學流體與純水等）至晶圓13〇之表面 以去除晶圓no上的微粒。另外，如箭號16〇所示，嘴嘴 (請先閲讀背面之注意事項再填寫本頁) 120更可具有往復運動，以便將清洗溶液15〇更均勻地喷 灑至晶圓130之表面上。此種單晶圓旋轉式晶圓清洗裝置 1〇〇具有很高的製程環境控制能力與微粒去除率。此外， 單晶圓旋轉式晶圓清洗裝f 100更具有伯地小、化學流體 與純水的消耗量較少、以及極富彈性的製程調整能力等之 優點 '然而，產能低與設備成熟度等均是其需要再突破的 地方。 上述整批式晶圓清洗裝置i 0與單晶圓旋轉式晶圓清洗 裝置1 00在實際使用上更具有一些急待克服的缺點。請參 考表1中的數據，其係說明使用習知整批式晶圓清洗裝置 與單晶圓旋轉式晶圓清洗裝置來清洗晶圓後之氧化物微粒 數與光阻缺陷數之比較。由表丨中可看出，以整批式晶圓 清洗裝置清洗晶圓後，晶圓上仍殘留氧化物微粒之問題較 不嚴重，但殘留光阻之問題卻值得重視。反之，以單晶圓 旋轉式晶圓清洗裝置清洗晶圓後，完全無殘留光阻之問 題’但卻在晶圓上殘留許多氧化物微粒。 經濟部智慧財產局員工消費合作社印製 表1 清洗裝置 單晶圓旋轉式 試片1 單晶圓旋轉式 試片2 整批式 氧化物微粒數 23 40 4 光阻缺陷數 0 0 9 5 本紙張尺度適用中國國家標準(CNS)A4規格(2ΐ0χ297公楚) 587276 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再塡寫本頁) 因此，有必要尋求解決之道。而流體力學中的定律可 用以做為解決上述問題的裝置或方法之理論根據。例如， 根據流體力學中的連續方程式Ai V1=A2V2，當不可壓縮流 體從具有截面積Αι與流速Vi之管路中第一位置流動至具 有截面積A2與流速V2之管路中第二位置時，截面積與流 速成反比。亦即，當不可壓縮流體從截面積A i較大之管路 中第一位置流動至截面積A2較小之管路中第二位置時，流 體將獲得加速的效果，因而可有效帶走晶圓上之微粒，其 中晶圓係置於具有較小截面積A2之管路中。 發明目的及概述： 鑒於上述發明背景中，以習知整批式晶圓清洗裝置來 清洗晶圓具有易殘留光阻之缺點，而使用習知單晶圓旋轉 式晶圓清洗裝置來清洗晶圓則具有易殘留氧化物微粒之缺 點。因此本發明之一目的為提供一種晶圓清洗裝置，可用 以提高清洗效率。 本發明之另一目的為提供一種晶圓清洗裝置，可用以 去除如氧化物之微粒。 本發明之又一目的為提供一種晶圓清洗裝置，可用以 防止光阻再度沉積。 經濟部智慧財產局員工消費合作社印製 依據本發明之上述目的，因此本發明提供一種晶圓清 洗裝置，係利用在此晶圓清洗裝置中流動之清洗溶液以清 除晶圓上之微粒，其中此晶圓清洗裝置至少包括：緩衝室， 此緩衝室具有第一截面積；以及清洗室，此清洗室具有第 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 587276 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 二截面積，且上述第一截面積大於第二截面積，而當使用 本發明之晶圓清洗裝置清洗晶圓時，晶圓係置於清洗室 中，其中清洗室之入口係連接至緩衝室之出口，而緩衝室 之出口與緩衝室中清洗溶液之液面距離一鉛直高度，致使 清洗室中之清洗溶液具有一流速，足以帶走晶圓上之微 粒。此外’本發明之晶圓清洗裝置更包括過濾器，此過濾 器之入口連接至清洗室之出口 ，其中此過濾器係用以收集 上述微粒。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖表做更詳細的闡述，其中： 第1圖係繪示習知整批式晶圓清洗裝置之示意圖； 第2圖係繪示習知單晶圓旋轉式晶圓清洗裝置之示意 圖； 第3圖係繪示本發明之一較佳實施例之晶圓清洗裝置 之側視不意圖，以及 表1係說明使用習知整批式晶圓清洗裝置與單晶圓旋 轉式晶圓清洗裝置來清洗晶圓後之氧化物微粒數與光阻缺 陷數之比較。 圖號對照說明： 10 整批式晶圓清洗裝置 20 清洗槽 30 入口管路 40 出口管路 50 晶圓 60 箭號 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 587276 A7 B7 五、發明説明（） 70 箭號 100 單 晶 圓 旋轉式晶 圓清洗裝置 1 10 旋 轉 夾 盤 120 喷 嘴 130 晶 圓 140 表 面 150 清 洗 溶 液 160 箭 號 170 箭 號 180 旋 轉 轴 210 緩衝 室 220 清 洗 室 230 過 濾 器 240 箭 號 250 箭 號 260 晶 圓 270 截 面 積 280 截 面 積 300 流 速 310 液 面 320 鉛 直 高 度 330 清 洗 溶液 發明 詳 細 說 明： (請先閱讀背面之注意事項再場寫本頁} 經濟部智慧財產局員工消費合作社印製 本發明係有關於一種具有緩衝室與清洗室，且緩衝室 之截面積遠大於清洗室之截面積之晶圓清洗裝置，其中欲 清洗之晶圓係置於清洗室中，且緩衝室與清洗室連接之鉛 直位置愈低則效果愈好。請參考第3圖所繪示之本發明之 一較佳實施例之晶圓清洗裝置之側視示意圖。第3圖中包 括緩衝室2 1 0、清洗室2 2 0、以及過濾器2 3 0等元件。此外， 第3圖中更包括晶圓2 6 0以及清洗溶液3 3 0等。以下說明 第3圖中各元件之用途及其連接關係。 緩衝室2 1 0係本發明之晶圓清洗裝置中的主要元件之 一。緩衝室210中具有一定量之清洗溶液330。在晶圓260 8 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 587276 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再塡寫本頁) 的清洗過程進行時，雖然緩衝室2 1 0中的清洗溶液3 3 〇會 持續地流進清洗室220中，但可如箭號240所示，由清潔 溶液循環裝置與清潔溶液槽（皆未繪示）持續補充清洗溶液 3 3 0進入緩衝室2 1 0中，而使緩衝室2 1 0中的清洗溶液3 3 〇 維持一定量。此外，緩衝室2 1 0具有截面積270。在其它 因素不變的情況下，若緩衝室2 1 〇的高度愈大，則截面積 270愈大’同時本發明之效果也愈大。 本發明之晶圓清洗裝置中的另一主要元件為清洗室 2 2 0。清洗至2 2 0中係用以放置晶圓2 6 0 ’以便做為晶圓2 6 0 進行清洗步驟之場所。此外，清洗室2 2 0具有截面積2 8 0， 其中截面積280遠小於上述缓衝室210之戴面積270。在 其它因素不變的情況下，清洗室220的截面積280愈小代 表清洗室220的高度也愈小。 經濟部智慧財產局員工消費合作社印製 為了發揮本發明之最佳效能，清洗室220與緩衝室2 1 0 之連接位置需儘量降低。亦即，清洗室220的錯直位置需 儘可能地降低，而使清洗室2 2 0的底面儘量靠近緩衝室2 1 0 的底面，以便使清洗室2 2 0的热直位置與緩衝室2 1 0中的 清洗溶液3 3 0之液面310距離鉛直高度320。若此鉛直高 度3 20愈大，則清洗室中所能獲得的流速300也愈大，而 以本發明移除晶圓2 6 0上的微粒之效果也愈好，其中晶圓 2 6 0上的微粒例如可為氧化物或光阻等。 此外，本發明之晶圓清洗裝置更包括過濾器2 3 0，用以 收集隨著清洗溶液3 3 0流出清洗室220之微粒。此過濾器 9 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 587276 A7 _B7__ 五、發明説明（） 23 0之入口藉由適當長度之管線連接至清洗室220之出 口，而過濾器2 3 0之出口則連接至前述清潔溶液循環裝置 與清潔溶液槽，藉以使流出過濾器2 3 0之清洗溶液3 3 0能 再循環至緩衝室2 1 0中而回收使用。 綜合上述，本發明之一優點為提供一種晶圓清洗裝 置，可用以提高清洗效率。 本發明之另一優點為提供一種晶圓清洗裝置，可用以 去除如氧化物之微粒。 本發明之又一優點為提供一種晶圓清洗裝置，可用以 防止光阻再度沉積。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公爱)587276 A7 B7 V. Description of the invention (Field of invention: ....... f (Please read the notes on the back before filling out this page) The present invention relates to a wafer cleaning device, especially to a device with Buffer room and cleaning room, and the cross-sectional area of the buffer room is much larger than that of the cleaning room: a wafer cleaning device with a cross-sectional area, in which the wafer to be cleaned is placed in "to middle" and the vertical position of the buffer room and the cleaning room is lower. The effect is good. BACKGROUND OF THE INVENTION: As the size of integrated circuits is shrinking, and the number of layers is increasing, 'why do particles on semiconductor wafers be produced and how to remove them has become a key to improve the yield of integrated circuits? It is an important issue for microparticles. The microparticles are produced in various steps in the manufacturing process, such as etching or grinding steps, and the microparticles must be removed from the wafer to avoid defects or reliability issues. Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperative Printing Traditionally, there are many different forms of particle removal from semiconductor wafers. One of the most common methods used to remove particles is to use a rotary punch. -Dry (Spin-Rinse.Dry; SRD) process. In the spin. Rinse-dry process, a liquid (such as water or alcohol) is sprayed onto the rotating wafer. The combination of rotational force and fluid friction force can remove particles Surface of the wafer. After the rinse step, the wafer is then dried by rotation. Although the spin-rinse-dry process is widely used in semiconductor manufacturing, the disadvantage of this technology is that when the particles to be removed are The radius is getting smaller and smaller, and the effect of removing particles or cleaning the wafer is also decreasing. The rotating force of the above particles is proportional to the square of the radius of the particles, and the frictional force of the fluid used to remove the particles is in accordance with the paper size. Applicable to China National Standard (CNS) A4 specification (210X 297 mm) 587276 A7 B7 V. Description of the invention (The radius of the particles is proportional to the power. Because of &, for small sub-micron particles, spin-rinse- The drying process is not a method that can completely remove particles. As for other methods to remove particles, there are limitations. For example, ultrasonic cleaning is an immersion cleaning process in which wafers It does not rotate, but 疋 is immersed in the liquid bath 'and the liquid in the bath is ultrasonically oscillated. However, the force used to remove particles on the wafer is weakened again due to the reduction of the particle radius, as in the spin-rinse and dry process The situation is average. Another technique used to remove particles is based on the difference in surface energy between two fluids. For example, two fluids (such as isopropanol and water) can be placed in a bath at the same time. Then, The wafer is immersed in the bath. When the particles on the wafer reach the interface between the two liquids in the bath, the difference in surface tension between the two liquids and the particles will cause the particles to rise or be taken off the wafer. Problems with this technology The reason is that only a few solutions can achieve the required surface energy difference, and the power generated by these few solutions is not enough to remove particles on the wafer surface. In addition, the other disadvantages of the above-mentioned wafer cleaning technology are related to whether semiconductor devices can be manufactured in a timely and cost-effective manner. These cleaning techniques typically include large quantities of chemicals that need to be bought beforehand and discarded afterwards. Therefore, what is needed in the wafer cleaning process is a device and method that can effectively remove smaller particles, and that it can have the minimum process time, waste chemicals, and equipment costs. No matter which cleaning technology is mentioned above, it can generally include two types: batch type or single wafer spin-on. The paper size is applicable to China National Standard (CNS) A4 (210x297) ) (Please read the precautions on the back, and then write this page again).-Ordering · Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 587276 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 Cleaning device. Please refer to the conventional batch wafer cleaning and placement as shown in Figure 1. The batch wafer cleaning device 10 includes a cleaning tank 20, an inlet pipe 30, and an outlet pipe 40. The inlet pipe 30 runs through one surface of the cleaning tank 20 and the outlet pipe 40 runs through the other surface of the cleaning tank 20. When the cleaning process is performed, the entire batch of wafers 50 is firstly processed, such as 13 Pieces or 25 pieces 'are placed in the cleaning tank 20. Then, as shown by the arrow 60, pure water' mouse gas and chemical fluid enter the cleaning tank 20 through the inlet pipe 30 to take away the surface of the crystal 50. Particles. Then 'this chemical fluid flows out of the outlet pipe 40 as shown by the arrow, After passing through the particle passing device (not shown) and the circulating pump (not shown), it can be recycled through the inlet pipe 30 into the cleaning tank 20 as shown by arrow 60. This batch type The advantages of the wafer cleaning device are: better process environment and particle control ability, less consumption of chemical fluids and pure water, and higher flexibility of equipment maneuvering. However, its disadvantages are lower production capacity and Mutual contamination will still occur between the wafers 50. ', Please refer to the schematic diagram of the conventional single-wafer rotary wafer cleaning device shown in Figure 2. The single-wafer rotary wafer in Figure 2 The circular cleaning device 100 includes components such as a rotating chuck 110 and a nozzle 120. Before the cleaning process is performed, a single wafer 130 needs to be placed on the surface 140 of the rotating chuck 11 'and fixed by an appropriate mechanism (not shown). Wafer 130. Then, the reciprocating function of nozzle 120 and the rotation function of the rotary chuck 丨 丨 are activated. During the cleaning process, as shown by arrow 170, the wafer 130 and the rotary chuck 1 The 〇 system rotates at the same time around the rotation axis 180. At the same time, the size of the paper sprayed by the nozzle 1 20 is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm).玎 ......... Refer to (Please read the notes on the back before filling this page) 587276 A7 __B7 V. Description of the invention () Cleaning solution 150 (including chemical fluid and pure water, etc.) to wafer 13〇 Surface to remove particles on the wafer no. In addition, as shown by arrow 16〇, mouth (please read the precautions on the back before filling this page) 120 can have a reciprocating motion, so that the cleaning solution 15〇 more Spray evenly on the surface of the wafer 130. This single-wafer rotary wafer cleaning device 100 has high process environment control capabilities and particle removal rates. In addition, the single-wafer rotary wafer cleaning package f 100 has the advantages of small Burgundy, less consumption of chemical fluids and pure water, and extremely flexible process adjustment capabilities. However, low production capacity and equipment maturity Equality is where they need to break through. The above-mentioned batch-type wafer cleaning device i 0 and single-wafer rotary type wafer cleaning device 100 have some shortcomings that need to be overcome in practical use. Please refer to the data in Table 1, which shows the comparison between the number of oxide particles and the number of photoresist defects after cleaning wafers using conventional batch wafer cleaning devices and single wafer rotary wafer cleaning devices. It can be seen from Table 丨 that after the wafer is cleaned by the batch-type wafer cleaning device, the problem of remaining oxide particles on the wafer is less serious, but the problem of residual photoresistance is worthy of attention. On the contrary, after cleaning the wafer with a single wafer rotary wafer cleaning device, there is no problem of residual photoresistance ', but many oxide particles remain on the wafer. Printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 1 Cleaning device Single wafer rotating test strip 1 Single wafer rotating test strip 2 Number of oxide particles in a batch 23 40 4 Number of photoresistive defects 0 0 9 5 This paper The standard applies to the Chinese National Standard (CNS) A4 specification (2ΐ0χ297). 587276 A7 B7 5. Description of the invention () (Please read the precautions on the back before writing this page) Therefore, it is necessary to find a solution. The laws in fluid mechanics can be used as the theoretical basis of the device or method to solve the above problems. For example, according to the continuous equation Ai V1 = A2V2 in fluid mechanics, when an incompressible fluid flows from a first position in a pipeline having a cross-sectional area Aι and a flow velocity Vi to a second position in a pipeline having a cross-sectional area A2 and a flow velocity V2 The cross-sectional area is inversely proportional to the flow rate. That is, when the incompressible fluid flows from the first position in the pipeline with a larger cross-sectional area A i to the second position in the pipeline with a smaller cross-sectional area A 2, the fluid will obtain an acceleration effect, and thus the crystals can be effectively taken away. Particles on a circle, in which the wafer is placed in a pipeline with a small cross-sectional area A2. Object and Summary of the Invention: In view of the above background of the invention, the conventional batch wafer cleaning device for cleaning wafers has the disadvantage of easy residual photoresistance, and the conventional single wafer rotary wafer cleaning device is used for cleaning wafers. However, it has the disadvantage of easily remaining oxide particles. It is therefore an object of the present invention to provide a wafer cleaning apparatus which can improve the cleaning efficiency. Another object of the present invention is to provide a wafer cleaning apparatus which can be used to remove particles such as oxides. Yet another object of the present invention is to provide a wafer cleaning device, which can be used to prevent photoresist from being deposited again. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed according to the above purpose of the present invention. Therefore, the present invention provides a wafer cleaning device which uses a cleaning solution flowing in the wafer cleaning device to remove particles on the wafer. The wafer cleaning device includes at least: a buffer chamber having a first cross-sectional area; and a cleaning chamber having the first paper size applicable to China National Standard (CNS) A4 (210X 297 mm) 587276 A7 B7 5 2. Description of the invention () (Please read the precautions on the back before filling this page) The second cross-sectional area, and the first cross-sectional area is greater than the second cross-sectional area. When the wafer is cleaned using the wafer cleaning device of the present invention, the crystal The circle is placed in the cleaning chamber, where the inlet of the cleaning chamber is connected to the outlet of the buffer chamber, and the distance between the outlet of the buffer chamber and the liquid level of the cleaning solution in the buffer chamber is a vertical height, so that the cleaning solution in the cleaning chamber has a flow rate Enough to remove particles from the wafer. In addition, the wafer cleaning device of the present invention further includes a filter, the inlet of the filter is connected to the outlet of the cleaning chamber, and the filter is used to collect the above particles. Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following diagrams, where: FIG. 1 is a schematic diagram showing a conventional batch-type wafer cleaning device; FIG. 2 is a schematic diagram showing a conventional single-wafer rotary wafer cleaning device; FIG. 3 is a schematic side view of a wafer cleaning device according to a preferred embodiment of the present invention; and Table 1 is a description Compare the number of oxide particles and the number of photoresist defects after cleaning the wafer using a conventional batch-type wafer cleaning device and a single-wafer rotary wafer cleaning device. Comparative description of drawing numbers: 10 Batch wafer cleaning device 20 Cleaning tank 30 Inlet pipeline 40 Outlet pipeline 50 Wafer 60 Arrow Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumption Cooperative This paper is printed in accordance with Chinese National Standards (CNS) A4 specifications (210X297 mm) 587276 A7 B7 V. Description of the invention () 70 arrows 100 single wafer rotary wafer cleaning device 1 10 rotating chuck 120 nozzle 130 wafer 140 surface 150 cleaning solution 160 arrow 170 arrow 180 Rotary shaft 210 Buffer chamber 220 Cleaning chamber 230 Filter 240 Arrow 250 Arrow 260 Wafer 270 Cross-sectional area 280 Cross-sectional area 300 Flow rate 310 Liquid level 320 Vertical height 330 Cleaning solution Detailed description of the invention: (Please read the precautions on the back first Reprint this page} Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics This invention relates to a wafer cleaning device having a buffer chamber and a cleaning chamber, and the sectional area of the buffer chamber is much larger than that of the cleaning chamber. The cleaned wafer is placed in a cleaning chamber, and the buffer chamber is connected to the cleaning chamber. The lower the vertical position, the better the effect. Please refer to the schematic diagram of the side view of the wafer cleaning device of a preferred embodiment of the present invention shown in Figure 3. The figure 3 includes the buffer chamber 2 1 0, cleaning The components of the chamber 2 2 0 and the filter 2 3 0. In addition, FIG. 3 further includes the wafer 2 60 and the cleaning solution 3 3 0. The following describes the purpose and connection relationship of the components in FIG. 3. The buffer chamber 2 10 is one of the main components of the wafer cleaning device of the present invention. The buffer chamber 210 has a certain amount of cleaning solution 330. On the wafer 260 8 the paper size applies to the Chinese National Standard (CNS) A4 specification ( 210X297 mm) 587276 A7 B7 V. Description of the invention () (Please read the precautions on the back before writing this page) When the cleaning process is performed, although the cleaning solution 3 3 0 in the buffer chamber 2 10 will continue to flow Into the cleaning chamber 220, but as shown by the arrow 240, the cleaning solution circulation device and the cleaning solution tank (neither shown) are continuously replenished with the cleaning solution 3 3 0 into the buffer chamber 2 1 0, so that the buffer chamber 2 A certain amount of the cleaning solution 3 3 0 in 10 is maintained. In addition, the buffer chamber 2 1 0 It has a cross-sectional area of 270. Under the condition that other factors are not changed, if the height of the buffer chamber 2 1 0 is larger, the cross-sectional area of 270 is larger. At the same time, the effect of the present invention is also greater. The other main component is the cleaning chamber 2 2 0. The cleaning to 2 2 0 is used to place the wafer 2 6 0 ′ so as to be a place where the wafer 2 6 performs the cleaning step. In addition, the cleaning chamber 220 has a cross-sectional area 280, where the cross-sectional area 280 is much smaller than the wearing area 270 of the buffer chamber 210 described above. With other factors being constant, the smaller the cross-sectional area 280 of the cleaning chamber 220 is, the smaller the height of the cleaning chamber 220 is. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In order to achieve the best performance of the present invention, the connection position between the cleaning room 220 and the buffer room 210 needs to be minimized. That is, the misaligned position of the cleaning chamber 220 should be reduced as much as possible, and the bottom surface of the cleaning chamber 2 2 0 should be as close as possible to the bottom surface of the buffer chamber 2 1 0 so that the hot straight position of the cleaning chamber 2 2 0 and the buffer chamber 2 The liquid level 310 of the cleaning solution 3 3 0 in 10 is from the vertical height 320. If the vertical height 3 20 is larger, the flow velocity 300 that can be obtained in the cleaning chamber is larger, and the effect of removing particles on the wafer 2 60 according to the present invention is better, in which the wafer 2 6 0 The fine particles may be, for example, an oxide or a photoresist. In addition, the wafer cleaning device of the present invention further includes a filter 230 for collecting particles that flow out of the cleaning chamber 220 with the cleaning solution 330. This filter 9 paper size applies to Chinese National Standard (CNS) A4 specifications (210X 297 mm) 587276 A7 _B7__ V. Description of the invention () The inlet of 23 0 is connected to the outlet of the cleaning chamber 220 through a suitable length of pipeline, and The outlet of the filter 230 is connected to the cleaning solution circulation device and the cleaning solution tank described above, so that the cleaning solution 3 3 0 flowing out of the filter 230 can be recycled to the buffer chamber 210 and recovered for use. To sum up, one advantage of the present invention is to provide a wafer cleaning device, which can be used to improve the cleaning efficiency. Another advantage of the present invention is to provide a wafer cleaning apparatus that can be used to remove particles such as oxides. Another advantage of the present invention is to provide a wafer cleaning device, which can be used to prevent photoresist from being deposited again. As will be understood by those familiar with this technology, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size applies to China National Standard (CNS) A4 (210X297 public love)