TW578373B - Thin-film bulk acoustic resonator filtering device and duplex using the device - Google Patents
Thin-film bulk acoustic resonator filtering device and duplex using the device Download PDFInfo
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578373 _案號91138134_年月日__ 五、發明說明(1) [發明所屬之技術領域] 一種薄膜體聲波共振子濾波裝置及使用該裝置之雙工 器,更詳而言之,係有關於一種透過外加串聯及/或並聯 電感及電容其中任一者於該薄膜體聲波共振子之濾波裝置 及雙工器。 [先前技術] 隨著行動通訊科技技術之急速成長,許多諸如行動電 話、衛星定位系統、藍芽規格之傳輸模組或其他透過無線 模式之傳輸模組等,已成為行動通訊產品中不可或缺之技 術開發領域。現階段無線通訊技術之研發者均以開發出通 訊品質優良,且輕薄短小之方向發展。是故,該等無線通 訊產品内部之電子元件或機械構件其性能及體積間如何取 得最佳化之表現,遂成為極重要之課題。 就以無線通訊產品中所必備之濾波裝置為例,其係用 以透過電阻、電感及電容之組合網路,藉以讓某一特定頻 率通過,而截止或衰減其他頻率之裝置。目前主要被使用 之遽波裝置包括有表面聲波共振子濾波裝置、陶瓷濾波裝 置、石英遽波裝置、積層L C渡波裝置、介質渡波裝置以及 薄膜體聲波共振子濾波裝置等。其中,又以薄膜體聲波共 振子濾波裝置因具有薄膜化、體積小、操作頻率高、低插 入損失以及易與集成電路整合等特性,而被視為未來最具 發展潛力之濾波裝置類型,特別是其符合系統型晶片 (System On a Chip)整合電子元件之未來走向。 然,若利用該薄膜體聲波共振子來設計雙工器中之傳578373 _Case No. 91138134_ Year Month Date__ V. Description of the invention (1) [Technical field to which the invention belongs] A thin film bulk acoustic wave filter device and a duplexer using the device, more specifically, there are The invention relates to a filtering device and a duplexer that pass any one of series and / or parallel inductors and capacitors to the film bulk acoustic wave resonator. [Previous technology] With the rapid development of mobile communication technology, many mobile communication products, such as mobile phones, satellite positioning systems, Bluetooth-specific transmission modules, or other transmission modules through wireless modes, have become indispensable in mobile communication products. Technology development field. At this stage, the developers of wireless communication technology are developing in the direction of excellent communication quality, thinness and shortness. Therefore, how to optimize the performance and volume of the electronic components or mechanical components inside these wireless communication products has become a very important issue. Take the necessary filtering device in wireless communication products as an example. It is a device that uses a combination of resistors, inductors, and capacitors to allow a specific frequency to pass, and cuts or attenuates other frequencies. The chirped wave devices currently used mainly include surface acoustic wave filter devices, ceramic filter devices, quartz chirped wave devices, laminated LC wave devices, dielectric wave devices, and thin-film bulk acoustic wave filter devices. Among them, the thin film bulk acoustic wave filter device is considered to be the most promising type of filter device in the future due to its thin film, small size, high operating frequency, low insertion loss, and easy integration with integrated circuits. It is in line with the future trend of System On a Chip integrated electronic components. However, if the thin-film bulk acoustic resonator is used to design the transmission in a duplexer
578373 _案號 91138134_年月日__ 五、發明說明(2) 送端濾波裝置與接收端濾波裝置時,當該傳送端濾波裝置 與該接收端濾波裝置與一天線端連接後,則傳送信號與接 收信號間之區隔主要是依據信號本身之頻率來作決定。因 此,一方面要確保自該傳送端送出之信號能直接送至該天 線端;另一方面,則要避免該信號反饋至該接收端,進而 貫穿該接收端之低雜訊放大單元造成損害。 再者,以該薄膜體聲波共振子來製作濾波裝置,依其 電路架構得區分為梯型(Ladder* Type)及格型(Lattice T y p e)兩種濾波裝置。對於雙工器之規格而言,依照不同 系統之需求其所要求傳送信號與接收信號間之警戒頻帶 (Guard Band)通常小於載波頻率的百分之二頻寬,且傳送 信號與接收信號之頻寬通常為載波頻率的百分之三頻寬。 亦即,該傳送端濾波裝置與該接收端濾波裝置均需要相當 陡峭之滾邊(Rol 1-off )。此外,為確保傳送信號與接收信 號不會相互干擾,則兩個帶通濾波裝置彼此的斥帶在另一 帶通濾波裝置的通帶衰減量須符合規格。 承前所述,為使自該傳送端送出之信號不會反饋至該 接收端而能夠直接送至該天線端將信號送出,習知之技術 係於該天線端與該接收端濾波裝置間耦接一四分之一波長 的傳輸線,藉以透過相位偏移達到反射該傳送端信號,俾 防止該傳送端之信號反饋至該接收端。惟,此種解決技術 之最大缺點在於所增加之傳輸線會大幅增加雙工器整體體 積,此外亦會因為增加該傳輸線之故,而產生不必要之信 號干擾亦即產生所謂寄生效應。習知之另一解決技術係將578373 _Case No. 91138134_ Year Month Date__ V. Description of the invention (2) When the transmitting end filtering device and the receiving end filtering device are connected, after the transmitting end filtering device and the receiving end filtering device are connected to an antenna end, the transmission The separation between the signal and the received signal is mainly determined by the frequency of the signal itself. Therefore, on the one hand, it is necessary to ensure that the signal sent from the transmitting end can be directly sent to the antenna end; on the other hand, it is necessary to prevent the signal from being fed back to the receiving end, thereby causing damage to the low-noise amplifier unit that runs through the receiving end. Furthermore, the thin film bulk acoustic wave resonator is used to make a filtering device, and according to its circuit structure, it can be divided into two types: a ladder type (Ladder * Type) and a lattice type (Lattice Type). As for the specifications of the duplexer, according to the requirements of different systems, the guard band between the transmitted signal and the received signal is usually less than two percent of the carrier frequency, and the frequency of the transmitted signal and the received signal The width is usually three percent of the carrier frequency. That is, both the transmitting-side filtering device and the receiving-side filtering device require quite steep roll-offs (Rol 1-off). In addition, in order to ensure that the transmitted signal and the received signal do not interfere with each other, the passband attenuation of the two band-pass filtering devices in the other band-pass filtering device must meet the specifications. According to the foregoing, in order that the signal sent from the transmitting end will not be fed back to the receiving end and can be directly sent to the antenna end to send out the signal, a conventional technique is to couple a filter between the antenna end and the receiving end filtering device. A quarter-wavelength transmission line is used to reflect the signal of the transmitting end through a phase shift, thereby preventing the signal of the transmitting end from being fed back to the receiving end. However, the biggest disadvantage of this solution technology is that the added transmission line will greatly increase the overall size of the duplexer. In addition, because of the increase of the transmission line, unnecessary signal interference will occur, that is, the so-called parasitic effect. Another solution technology department
578373 修正 案號 9Π38134 五、發明說明(3) 薄膜體聲波共振子與一 Crystal Filter)相互 非常高,並不符合經濟 [發明内容] 為解決上述習知技 提供一種薄膜體聲波共 器,用以解決薄膜體聲 波裝 的衰 波裝 信號 波裝 造成 遽波 聯所 波裝 之不 共振 其中 堆疊晶體 串接。惟 效益。 術之缺失 振子濾、波 波共振子 本發明之另一目的在於提供 置及使用該裝置之雙工器, 減量。 本發明之又一目的在於提供 置及使用該裝置之雙工器, 反饋至接收端而損害接收端 本發明之再一目的在於提供 置及使用該裝置之雙工器, 雙工器之體積增加並產生不 為達成以上所述之目的,本 裝置包括有複數個由薄膜體 構成之帶通濾波裝置,本發 置係採用前述之梯型濾波裝 該梯型薄膜體聲波共振子濾 同共振頻率,亦即所有串聯 頻率;所有並聯之薄膜體聲 ,該並聯之薄膜體聲波共振 濾、波裝置(Stacked ,就製程上之考量其成本 ,本發明之主要目的在於 裝置及使用該裝置之雙工 本身頻寬之限制。 一種薄膜體聲波共振子濾 用以增加濾波裝置於斥帶 一種薄膜體聲波共振子濾 藉以防止傳送端所送出之 之低雜訊放大單元。 一種薄膜體聲波共振子濾 無須透過外加之傳輸線而 必要之寄生效應。 發明之薄膜體聲波共振子 聲波共振子元件相互串並 明之薄膜體聲波共振子濾 置架構。 波裝置包括至少兩個以上 之薄膜體聲波共振子為一 波共振子為一共振頻率。 子的共振頻率略低於該串578373 Amendment No. 9Π38134 V. Description of the invention (3) The thin film bulk acoustic wave resonator and a Crystal Filter are very high and are not economical [Content of the Invention] To solve the above-mentioned conventional technology, a thin film bulk acoustic wave resonator is provided for Solve the problem that the thin-film bulk acoustic wave device's attenuation wave signal wave device causes the non-resonance of the wave wave device to be stacked in which the stacked crystals are connected in series. But benefits. Lack of technique Oscillator filter, wave resonator Another object of the present invention is to provide a duplexer that uses and disposes of the device, and reduces the weight. Another object of the present invention is to provide a duplexer for placing and using the device, which is fed back to the receiving end to damage the receiving end. Another object of the present invention is to provide a duplexer for placing and using the device, and the volume of the duplexer increases. In order to achieve the above-mentioned purpose, the device includes a plurality of band-pass filter devices composed of a thin film body. The present device uses the aforementioned ladder filter to install the ladder film bulk acoustic wave resonator filter with the same resonance frequency. That is, all series frequencies; all parallel thin film bulk sounds, the parallel thin film bulk acoustic resonance filter and wave device (Stacked, considering the cost of the process, the main purpose of the present invention is the device and the duplex using the device Limitation of its own bandwidth. A thin-film bulk acoustic wave filter is used to increase the filtering device. A thin-film bulk acoustic wave filter is used to prevent the low-noise amplification unit sent from the transmitting end. A thin-film bulk acoustic wave filter does not require The parasitic effect necessary through the additional transmission line. Invented film bulk acoustic wave acoustic wave element Thin film bulk acoustic resonator filter set architecture. Wave device comprises at least two thin film bulk acoustic wave resonators is a resonator of a resonant frequency. The resonant frequency slightly lower than the sub-sequence
第8頁 578373 _案號 91138134_年月日__ 五、發明說明(4) 聯之薄膜體聲波共振子的共振頻率。 此外,該梯型薄膜體聲波共振子濾波裝置復包括至少 一電感及電容其中任一者元件與該薄膜體聲波共振子串及 /或並聯。透過該串及/或並聯電感及電容其中任一者於該 薄膜體聲波共振子之架構,則得以透過不同之串及/或並 聯形式及/或串及/或並聯電感及電容其中任一者之數量, 以達到調整該薄膜體聲波共振子濾波裝置之頻寬。 另一方面,本發明之薄膜體聲波共振子雙工器,則包 括一第一埠、第二埠及第三埠;一介於該第一埠與第二埠 間並與該第一埠與該第二埠耦接之傳送端薄膜體聲波共振 子濾波裝置;以及一介於該第一埠與第三埠間並與該第一 埠與該第三埠耦接之接收端薄膜體聲波共振子濾波裝置。 其中,該第一埠係用以耦接至一傳送接收信號之天線端。 又,該傳送端薄膜體聲波共振子濾波裝置及該接收端薄膜 體聲波共振子濾波裝置,均至少包括一薄膜體聲波共振 子。此外,該傳送端薄膜體聲波共振子濾波裝置及接收端 薄膜體聲波共振子濾波裝置,均包括有至少一與該薄膜體 聲波共振子串及/或並聯之電感及電容其中任一者。 相較於習知之薄膜體聲波共振子濾波裝置及使用該裝 置之雙工器,本發明之薄膜體聲波共振子濾波裝置及使用 該裝置之雙工器,於無須透過外加之傳輸線而造成雙工器 之體積大幅增加之前提下,即得以解決薄膜體聲波共振子 本身頻寬之限制、增加濾波裝置於斥帶的衰減量、防止傳 送端所送出之信號反饋至接收端而損害接收端之低雜訊放Page 8 578373 _case number 91138134_year month__ V. Description of the invention (4) The resonance frequency of the thin film bulk acoustic wave resonator. In addition, the ladder-type thin-film bulk acoustic wave filter device further comprises at least one element of any one of an inductor and a capacitor connected in series and / or in parallel with the thin-film bulk acoustic wave resonator. Through the structure of any of the series and / or parallel inductors and capacitors in the thin film bulk acoustic wave resonator, different series and / or parallel forms and / or series and / or parallel inductors and capacitors can be passed The amount is adjusted so as to adjust the bandwidth of the thin film bulk acoustic wave filter device. On the other hand, the film bulk acoustic wave duplexer of the present invention includes a first port, a second port, and a third port; an interposition between the first port and the second port and the first port and the second port; A transmitting-end thin-film bulk acoustic wave filter device coupled to the second port; and a receiving-end thin-film bulk acoustic wave filter device connected between the first and third ports and coupled with the first port and the third port Device. The first port is coupled to an antenna terminal for transmitting and receiving signals. In addition, the transmitting-end thin-film bulk acoustic wave filter device and the receiving-end thin-film bulk acoustic wave filter device both include at least one thin-film bulk acoustic wave resonator. In addition, the transmitting-end thin-film bulk acoustic wave filter device and the receiving-end thin-film bulk acoustic wave filter device each include at least one of an inductor and a capacitor connected in series and / or in parallel with the thin-film bulk-acoustic wave resonator. Compared with the conventional thin film bulk acoustic wave filter device and the duplexer using the device, the thin film bulk acoustic wave filter device and the duplexer using the device of the present invention cause duplexing without passing through an additional transmission line. Before the volume of the device is greatly increased, it can solve the limitation of the bandwidth of the thin film bulk acoustic resonator, increase the attenuation of the filter device in the repulsion band, and prevent the signal sent by the transmitting end from feeding back to the receiving end to damage the low level of the receiving end Noise
578373 修正 案號 91138134 五、發明說明(5) 大單元並防止產生不必要之寄生效應。 [實施方式] 薄膜體聲波共振子濾波裝置及使用該裝置之雙工器。 本發明之薄膜體聲波共振子濾波裝置1 0 0包括有複數 個薄膜體聲波共振子,該薄膜體聲波共振子之操作頻率範 圍可從4 00ΜΗΖ至20GHZ。請參閱第1圖,一典型之薄膜體聲 波共振子1 0 1主要係由一上電極20 1、一下電極2 0 2及一壓 電層2 0 3所組成。請參閱第2圖,當一射頻(Radio Frequency ;RF)信號通過該薄膜體聲波共振子101時,經 由壓電層機電轉換作用產生共振,在共振頻率附近其阻抗 會有劇烈變化。於串聯共振頻率(f r )該點虛阻抗最小,則 該薄膜體聲波共振子101為通路;而並聯共振頻率(fa)該 點虛阻抗最大,則該薄膜體聲波共振子1 0 1為開路。前述 之共振頻率之差Δί( = ί3-fr)對該薄膜體聲波共振子濾波 裝置1 0 0有極大之影響。 承前,該壓電層材料得採用氮化鋁、氧化鋅或锆鈦酸 錯等;該電極材料則得採用鋁、金、鉑或鉬等。於本實施 例中,該薄膜體聲波共振子濾波裝置係應用於一信號傳輸 之雙工器中,由於氮化鋁之相位速度較大,適用於高頻率 之濾波裝置而應用於雙工器中。故該壓電層2 0 3係採用氮 化鋁,該上下電極2 0 1 、2 0 2則採用鋁。 請參閱第3圖,其中顯示本發明之薄膜體聲波共振子 濾波裝置1 0 0之架構。承前所述,該薄膜體聲波共振子濾 波裝置100包括串聯之薄膜體聲波共振子101、103及105與578373 Amendment No. 91138134 V. Description of the invention (5) Large unit and prevent unnecessary parasitic effects. [Embodiment] A thin film bulk acoustic wave filter device and a duplexer using the device. The thin film bulk acoustic wave filter device 100 of the present invention includes a plurality of thin film bulk acoustic wave resonators, and the operating frequency range of the thin film bulk acoustic wave resonators can be from 400 MHz to 20 GHz. Please refer to Fig. 1. A typical thin film bulk acoustic resonator 1 0 1 is mainly composed of an upper electrode 20 1, a lower electrode 2 02 and a piezoelectric layer 2 0 3. Referring to FIG. 2, when a radio frequency (RF) signal passes through the thin-film bulk acoustic wave resonator 101, resonance occurs through electromechanical conversion of the piezoelectric layer, and its impedance will change drastically near the resonance frequency. At the point where the series resonance frequency (f r) is the smallest virtual impedance, the thin film bulk acoustic wave resonator 101 is a path; while at the parallel resonance frequency (fa), the point is the largest virtual impedance, the thin film bulk acoustic wave resonator 101 is an open circuit. The aforementioned difference in resonance frequency Δί (= ί3-fr) has a great influence on the thin film bulk acoustic wave filter device 100. Before the bearing, the material of the piezoelectric layer must be aluminum nitride, zinc oxide, or zirconium titanate, and the electrode material must be aluminum, gold, platinum, or molybdenum. In this embodiment, the thin film bulk acoustic wave filter device is applied to a duplexer for signal transmission. Due to the large phase speed of aluminum nitride, it is suitable for a high frequency filter device and is used in a duplexer. . Therefore, the piezoelectric layer 230 is made of aluminum nitride, and the upper and lower electrodes 2 01 and 202 are made of aluminum. Please refer to FIG. 3, which shows the structure of the thin film bulk acoustic wave filter device 100 of the present invention. According to the foregoing description, the thin film bulk acoustic wave filter device 100 includes thin film bulk acoustic wave resonators 101, 103, and 105 connected in series.
第10頁 578373 案號 9U38134 年 月 曰 修正 五、發明說明(6) 並聯之薄膜體聲波共振子1 〇 7及1 0 9。 請參閱第4圖,其中顯示該薄膜體聲波共振子1 0 1之頻 率響應。由於前述所提及該薄膜體聲波共振子101之特 性,使得該薄膜體聲波共振子濾波裝置1 0 0的頻率響應於 通帶之高頻侧極低頻側會有很深的彎曲點(η 〇 t c h ),同時 亦造成陡峭之滾邊。是故,該薄膜體聲波共振子濾波裝置 1 0 0於斥帶之衰減量在設計雙工器之需求上並不理想,且 受限於該薄膜體聲波共振子1 0 1本身頻寬亦即該串聯共振 頻率(f r )與該並聯共振頻率(f a )之差△ f決定於所使用之 材料限制,則整個濾波裝置可能無法達到雙工器設計之要 求。是故,必須透過外加諸如電感及電容其中任一者等調 整元件,俾解決上述之問題。 請並同參閱第5(A)圖至第6(B)圖,本發明之薄膜體聲 波共振子濾波裝置1 0 0,即係透過串及/或並聯至少一之電 感於該薄膜體聲波共振子之方式,藉以達到增加該薄膜體 聲波共振子之頻寬。相對的,透過串及/或並聯至少一之 電容於該薄膜體聲波共振子之方式,則會產生減少該薄膜 體聲波共振子之頻寬。因本發明之薄膜體聲波共振子濾波 裝置1 0 0係採用氮化鋁作為壓電材料應用於雙工器中,故 需增大之頻寬,故選擇透過串及/或並聯至少一之電感於 該薄膜體聲波共振子之方式,俾達到增加該薄膜體聲波共 振子頻寬之目的。 此外,請參閱第7圖,透過前述串及/或並聯至少一之 電感於該薄膜體聲波共振子之方式,調整所產生之高頻側Page 10 578373 Case No. 9U38134 Month, Amendment V. Description of the Invention (6) Parallel film bulk acoustic wave resonators 107 and 109. Please refer to Fig. 4, which shows the frequency response of the film bulk acoustic resonator 1 0 1. Due to the aforementioned characteristics of the thin-film bulk acoustic wave resonator 101, the frequency of the thin-film bulk acoustic wave filter device 100 has a deep bending point (η 〇) in response to the high-frequency side and the low-frequency side of the passband. tch), which also causes a steep piping. Therefore, the attenuation of the repulsive band of the thin film bulk acoustic wave filter device 100 is not ideal in designing a duplexer, and is limited by the bandwidth of the thin film bulk acoustic wave resonator 1 0 1 itself, that is, The difference Δ f between the series resonance frequency (fr) and the parallel resonance frequency (fa) is determined by the materials used, so the entire filtering device may not meet the requirements of the duplexer design. Therefore, it is necessary to solve the above problems by adding adjustment components such as any one of an inductor and a capacitor. Please also refer to Figs. 5 (A) to 6 (B). The thin film bulk acoustic wave filter device 100 of the present invention is a thin film bulk acoustic wave resonance through at least one inductor connected in series and / or in parallel. This method can increase the bandwidth of the thin-film bulk acoustic resonator. In contrast, the manner in which at least one capacitor in series and / or parallel is connected to the thin film bulk acoustic wave resonator will reduce the frequency bandwidth of the thin film bulk acoustic wave resonator. Since the thin film bulk acoustic wave filter device 100 of the present invention uses aluminum nitride as a piezoelectric material to be used in a duplexer, the frequency bandwidth needs to be increased. Therefore, at least one inductor is selected through a series and / or parallel connection. In the manner of the thin film bulk acoustic wave resonator, the purpose of increasing the thin film bulk acoustic wave resonator bandwidth is achieved. In addition, please refer to FIG. 7 and adjust the generated high-frequency side through the above-mentioned series and / or parallel connection of at least one inductor to the thin-film bulk acoustic resonator.
第11頁 578373 案號 91138134 寺月日_ 五、發明說明(7) 或低頻側之向下彎曲點,得以控制該薄膜體聲波共振子渡 波裝置10 0於高頻側或低頻側之斥帶衰減量達一定值。 另一方面’請參閱第8圖,其中顯示本發明之薄膜體 聲波共振子雙工器之架構圖。其中包括一第一埠310、 一第二埠320及一第三埠330。其中,一傳送端薄膜體聲波 共振子濾、波裝置120係介於該第一埠310與該第二埠320 間,並與該第一埠310與該第二埠32 0耦接;一接收端薄膜 體聲波共振子渡波裝置1 3 0則係介於該第一琿3 1 〇與該第三 埠330間,並與該第一埠310與該第三埠330耦接。Page 11 578373 Case No. 91138134 Temple Moon Day _ V. Description of the invention (7) or the downward bending point on the low frequency side, the film bulk acoustic wave resonator wave device 100 can be controlled to repel band attenuation on the high frequency side or the low frequency side Reduction reaches a certain value. On the other hand, please refer to FIG. 8, which shows the structure diagram of the thin film bulk acoustic wave duplexer of the present invention. These include a first port 310, a second port 320, and a third port 330. Among them, a transmitting-end film bulk acoustic wave filter and wave device 120 are interposed between the first port 310 and the second port 320, and are coupled to the first port 310 and the second port 320. The end-film bulk acoustic wave resonator wave device 130 is interposed between the first port 310 and the third port 330, and is coupled to the first port 310 and the third port 330.
該傳送端薄膜體聲波共振子濾波裝置1 2 0復包括薄膜 體聲波共振子121、123、125、127、129及一與該薄膜體 聲波共振子125並聯之電感113。該接收端薄膜體聲波共振 子濾波裝置1 3 0復包括薄膜體聲波共振子1 3 1、1 3 3、1 3 5、 ^7、139及一與該薄膜體聲波共振子131並聯之電感115及 一與該薄膜體聲波共振子133並聯之電感117。The transmitting-end thin-film bulk acoustic wave filter device 120 includes a thin-film bulk acoustic wave resonator 121, 123, 125, 127, 129 and an inductor 113 connected in parallel with the thin-film bulk acoustic wave resonator 125. The receiving end thin film bulk acoustic wave filter device 130 includes a thin film bulk acoustic wave resonator 1 3 1, 1, 3 3, 1 3 5, ^ 7, 139, and an inductor 115 connected in parallel with the thin film bulk acoustic wave resonator 131. And an inductor 117 connected in parallel with the thin film bulk acoustic wave resonator 133.
由於該薄膜體聲波共振子濾波裝置1 〇 〇係應用於行動 電話裝置用以傳送接收信號之雙工器中。則該薄膜體聲波 共振子濾波裝置1 0 0則需分為該傳送端薄膜體聲波共振子 濾波裝置1 2 0及該接收端薄膜體聲波共振子濾波裝置1 3 0。 於設計該傳送端薄膜體聲波共振子濾波裝置1 2 0時僅需考 量頻寬及哀減量之問題。然,於該接收知薄膜體聲波共振 子濾波裝置1 3 0之部分則復需考量與該傳送端薄膜體聲波 共振子濾波裝置1 2 0阻抗匹配之問題。 承前所述,當透過該傳送端薄膜體聲波共振子濾波裝Since the thin film bulk acoustic wave filter device 100 is used in a duplexer for transmitting and receiving signals in a mobile phone device. Then the thin film bulk acoustic wave filter device 100 needs to be divided into the transmitting thin film bulk acoustic wave filter device 120 and the receiving thin film bulk acoustic wave filter device 130. When designing the thin film bulk acoustic wave filter device at the transmitting end 120, it is only necessary to consider the problems of bandwidth and attenuation. However, in the part of the receiving thin film bulk acoustic wave filter device 130, it is necessary to consider the problem of impedance matching with the transmitting end thin film bulk acoustic wave filter device 120. According to the foregoing, when the bulk acoustic wave filter device through the transmitting end film
第12頁 578373 案號 91138134 ___ί 修正 五、發明說明(8) 置1 2 0所傳至該耦接至第一埠之天線端1 4 0時,須考量該所 送出之信號是否會反饋回該接收端而貫穿該低雜訊放大單 元(未圖示)。是故,須確保該接收端薄膜體聲波共振子濾 波裝置1 3 0自該傳送端薄膜體聲波共振子濾波裝置1 2 0看進 去之阻抗於該傳送端薄膜體聲波共振子濾波裝置1 2 0之通 帶頻帶内為高阻抗,故必須考慮阻抗匹配之問題。 為此,如前述將該接收端薄膜體聲波共振子濾波裝置 130中最靠近該傳送端薄膜體聲波共振子濾波裝置120之該 薄膜體聲波共振子131與該電感115並聯之方式。請參閱第 9圖,則在該傳送端薄膜體聲波共振子濾波裝置1 2 0之通帶 頻帶内,自該傳送端薄膜體聲波共振子濾波裝置1 2 0所看 到之該接收端薄膜體聲波共振子濾波裝置1 3 0為高阻抗。 換言之,於此頻帶寬内自該傳送端所送出之信號不會反饋 回該接收端。 須特別說明者,係該接收端薄膜體聲波共振子濾波裝 置1 3 0所採用之梯型架構,不得如第1 0圖所示之架構。其 原因在於,若採該梯型架構,則自該傳送端薄膜體聲波共 振子濾波裝置1 2 0看入該接收端薄膜體聲波共振子濾波裝 置1 3 0時,該接收端薄膜體聲波共振子濾波裝置1 3 0必為低 阻抗,則無法解決前述阻抗匹配之問題。然,於該傳送端 薄膜體聲波共振子濾波裝置1 2 0則無需作此架構上之考 量。 於確定該第一電感於該薄膜體聲波共振子濾波裝置 1 0 0之位置後,則其他外加電感則會因為放置位置之不同Page 12 578373 Case No. 91138134 ___ ί Amendment V. Description of the invention (8) When transmitting the antenna terminal 1 2 0 connected to the first port 1 2 0, it is necessary to consider whether the signal sent by the terminal will be fed back to the The receiving end runs through the low noise amplifying unit (not shown). Therefore, it is necessary to ensure that the receiving-end thin-film bulk acoustic wave filter device 130 is viewed from the transmitting-end thin-film bulk acoustic wave filter device 1 2 0, and the impedance seen in the transmitting-end thin-film bulk-acoustic wave filter device 1 2 0 The passband frequency is high impedance, so the problem of impedance matching must be considered. For this reason, as described above, the thin-film bulk acoustic wave resonator 131 of the receiving-end thin-film bulk acoustic wave filter device 130 closest to the transmitting-end thin-film bulk acoustic-wave resonator filter device 120 is connected in parallel with the inductor 115. Referring to FIG. 9, in the passband band of the transmitting-end thin-film bulk acoustic wave filter device 120, the receiving-end thin-film body seen from the transmitting-side thin-film bulk acoustic wave filter device 120 The acoustic resonator filter device 130 has a high impedance. In other words, signals sent from the transmitting end within this frequency bandwidth are not fed back to the receiving end. It should be noted that the ladder-type structure adopted by the receiving-end thin-film bulk acoustic wave filter device 130 must not be the structure shown in FIG. 10. The reason is that if the ladder-type structure is adopted, when the receiving end thin film bulk acoustic wave filter device 130 is viewed from the receiving end thin film bulk acoustic wave filter device 130, the receiving end thin film bulk acoustic wave device The sub-filtering device 130 must have a low impedance, so the aforementioned problem of impedance matching cannot be solved. However, the thin film bulk acoustic wave filter device 120 at the transmitting end does not need to consider this structure. After determining the position of the first inductor at the film bulk acoustic wave filter device 100, the other external inductors will be different due to the placement position.
第13頁 578373 案號 91138134 年 月 曰 修正 五、發明說明(9) 而對整體阻抗有不同之影響。請參閱第1 1圖,設於該接收 端薄膜體聲波共振子濾波裝置1 3 0之薄膜體聲波共振子1 3 7 處串聯一電感117時,於靠近該傳送端薄膜體聲波共振子 濾波裝置1 2 0之高頻邊際附近會令該接收端薄膜體聲波共 振子濾波裝置1 3 0產生另一共振點,使得阻抗有,另一尖峰 點產生。 請參閱第12(A)至(C)圖,於該接收端薄膜體聲波共振 子濾波裝置1 3 0外加兩個外加電感時,其架構則具有三種 形式得符合高阻抗之要求。至於超過兩個外加電感時,則 得依前述之原理而推及之,於此不另為文贅述之。 承前所述,則本發明之薄膜體聲波共振子雙工器300 之***損耗與反射損耗則有如第13(A)至13(B)圖所示之特 性,其尺寸如下表:Page 13 578373 Case No. 91138134 Date: Amendment 5. Description of the invention (9) It has different influences on the overall impedance. Please refer to FIG. 11. When an inductor 117 is connected in series at the thin film bulk acoustic wave resonator device 13 of the thin film bulk acoustic wave resonator device 130 installed at the receiving end, the thin film bulk acoustic wave filter device near the transmitting end is connected. The vicinity of the high frequency margin of 120 will cause the receiving-end thin-film bulk acoustic wave filter device 130 to generate another resonance point, so that the impedance is present and another peak point is generated. Please refer to Figures 12 (A) to (C). When the thin film bulk acoustic wave filter device 130 at the receiving end is coupled with two external inductors, its structure has three forms to meet the requirements of high impedance. As for more than two external inductors, they can be extended according to the aforementioned principles, and will not be described in detail here. According to the foregoing description, the insertion loss and reflection loss of the thin film bulk acoustic wave duplexer 300 of the present invention have the characteristics shown in Figures 13 (A) to 13 (B), and their dimensions are as follows:
材料 頻帶 標稱中心頻率(f〇) (MHz) 頻帶莧(Bff) (MHz) 通帶回路損失(dB) 斥帶***損失(dB) 鋁 氮化鋁 鋁 Rx(2|) 1960 /。±30 13 min. 55 min. * Tx(2{) 1880 il nun. 45 min. 材料 頻帶 底層電極厚度 (#m) 壓電it厚度 爾電腿度 (Mm)* 面積(”2) 輔助感應器(ηΗ) 鋁 氮化鋁 鋁 Rx(2;) 0.3 1.8 並聯:G.525 串聯:0.475 200x200,143x143 267x267,152x152, 277x277,137x137^ 210x210 2.44,4. 87 Tx(2{) 並聯:Q.595 串聯:0.552 610x610 610x610 123x123,477x477, 477x477 . 82x82 10.66 第14頁 578373 _案號 91138134_年月日__ 五、發明說明(10) 請參閱第14(A)及(B)圖,其中顯示本發明之雙工器之 其他實施架構。須特別說明者,係本實施例中所揭示之架 構並非唯一之實施例。 以上所述僅為本發明之薄膜體聲波共振子濾波裝置及 使用該裝置之雙工器之較佳實施例,非用以限定本發明之 實質技術内容之範圍。本發明之薄膜體聲波共振子濾波裝 置及使用該裝置之雙工器其實質技術内容係廣義地定義於 下述之申請專利範圍中,任何他人所完成之技術實體或方 法,若與下述之申請專利範圍所定義者完全相同,或為等 效之變更,均將被視為涵蓋於此專利範圍之中。Material Frequency Band Nominal Center Frequency (f0) (MHz) Band 苋 (Bff) (MHz) Passband Loop Loss (dB) Rejection Band Insertion Loss (dB) Aluminum Aluminum Nitride Aluminum Rx (2 |) 1960 /. ± 30 13 min. 55 min. * Tx (2 {) 1880 il nun. 45 min. Thickness of bottom electrode of material band (#m) Thickness of piezoelectric it (Mm) * Area ("2) Auxiliary sensor (ΗΗ) Aluminum Aluminum Nitride Aluminum Rx (2;) 0.3 1.8 Parallel: G.525 Series: 0.475 200x200, 143x143 267x267, 152x152, 277x277, 137x137 ^ 210x210 2.44, 4. 87 Tx (2 {) Parallel: Q.595 Tandem: 0.552 610x610 610x610 123x123, 477x477, 477x477. 82x82 10.66 p.14 578373 _ case number 91138134_ year month day__ V. Description of the invention (10) Please refer to Figures 14 (A) and (B), which shows this Other implementation architectures of the invented duplexer. It should be noted that the architecture disclosed in this embodiment is not the only embodiment. The above is only the thin film bulk acoustic wave filter device of the present invention and the device using the device. The preferred embodiment of the duplexer is not intended to limit the scope of the essential technical content of the present invention. The essential technical content of the thin film bulk acoustic wave filter device of the present invention and the duplexer using the device is broadly defined below In the scope of the patent application mentioned above, any technical implementation completed by others Method or, if the patent as defined by the scope of the following identical or equivalent to the changes, this will be regarded as encompassed within the scope of the patent.
第15頁 578373 修正 案號 91138134 圖式簡單說明 [圖式簡單說明] 第1圖係一架構示意圖,用以顯示一典型之薄膜體聲 波共振子之主要架構; 第2圖係一關係圖,用以顯示該薄膜體聲波共振子其 頻率與阻抗間之關係; 第3圖係一架構示意圖,其中顯示本發明之薄膜體聲 波共振子濾波裝置之架構; 第4圖係一頻率響應圖,其中顯示該薄膜體聲波共振 子濾波裝置之頻率響應; 第5 ( A )及5 ( B )圖係一關係圖,用以顯示·本發明之薄膜 體聲波共振子濾波裝置,透過串及/或並聯一電感於該薄 膜體聲波共振子時,該薄膜體聲波共振子其阻抗變化情 況; 第6 ( A )及6 ( B )圖係一關係圖,用以顯示本發明之薄膜 體聲波共振子濾波裝置,透過串及/或並聯一電容於該薄 膜體聲波共振子時,該薄膜體聲波共振子其阻抗變化情 況; 第7圖係一示意圖,用以顯示本發明之薄膜體聲波共 振子濾波裝置應用於雙工器之頻率響應之間關係; 第8圖係一架構示意圖,用以顯示本發明之薄膜體聲 波共振子雙工器之架構; 第9圖係一關係圖,用以顯示於該接收端薄膜體聲波 共振子濾波裝置中,最靠近該傳送端薄膜體聲波共振子濾 波裝置之薄膜體聲波共振子與一電感並聯時,其頻率與阻Page 15 578373 Amendment No. 91138134 Brief description of the drawings [Simplified description of the drawings] Figure 1 is a schematic diagram of the structure, which shows the main structure of a typical thin-film bulk acoustic wave resonator; Figure 2 is a relationship diagram. To show the relationship between the frequency and impedance of the thin-film bulk acoustic wave resonator; FIG. 3 is a schematic diagram showing the structure of the thin-film bulk acoustic wave filter device of the present invention; and FIG. 4 is a frequency response diagram showing Frequency response of the thin-film bulk acoustic wave filter device; Figures 5 (A) and 5 (B) are a relationship diagram for showing the thin-film bulk acoustic wave filter device of the present invention, which is connected in series and / or in parallel through a When the inductor is in the thin film bulk acoustic wave resonator, the impedance change of the thin film bulk acoustic wave resonator; Figures 6 (A) and 6 (B) are a relationship diagram for showing the thin film bulk acoustic wave filter device of the present invention , When a capacitor is connected in series and / or in parallel with the thin film bulk acoustic wave resonator, the impedance change of the thin film bulk acoustic wave resonator is shown in FIG. 7 is a schematic diagram showing the thin film bulk sound of the present invention The relationship between the frequency response of the resonator filter device applied to the duplexer; Figure 8 is a schematic diagram of the structure, used to show the structure of the film bulk acoustic wave resonator duplexer of the present invention; Figure 9 is a relationship diagram, The frequency and impedance of the thin-film bulk acoustic wave resonator closest to the transmitting-end thin film bulk acoustic wave filter device in parallel with an inductor are shown in the thin-film bulk acoustic wave filter device at the receiving end.
第16頁 578373 案號 91138134 修正 圖式簡單說明 抗間之關係; 第1 0圖係一架構示 工器中該接收端薄膜體 第1 1圖係一關係圖 體聲波共振子渡波裝置 子濾波裝置之於該第一 電感時,其頻率與阻抗 第12(A)至12(C)圖 雙工器中該接收端薄膜 感時符合高阻抗之三種 第13(A)及13(B)圖 膜體聲波共振子雙工器 性關係;以及 第14(A)及14(B)圖 之薄膜體聲波共振子雙 意圖’ 聲波共 ,用以 中,設 個並聯 間之關 係一架 體聲波 可能架 係一關 實施例 用以顯示不 振子濾波裝 顯示於雙工 於該接收端 薄膜體聲波 係; 構示意圖, 共振子濾波 構; 係圖,用以 的***損耗 適用於本發明雙 置之梯型架構; 器之接收端薄膜 薄膜體聲波共振 共振子處串聯一 用以顯示本發明 裝置外加兩個電 顯示本發明之薄 與反射損耗之特 係一架構示意圖,用以顯示本發明 工器之不同實施架構。 100 薄膜體聲波共振子濾波裝置 101、103、105、107、109 薄膜體聲波共振子 111、 113、 115、 117 電感 120 傳送端薄膜體聲波共振子濾波裝置 121、123、125、127、129 薄膜體聲波共振子 130 接收端薄膜體聲波共振子濾波裝置 131、133、135、137、139 薄膜體聲波共振子 140 天線端 201 上電極Page 16 578373 Case No. 91138134 Revised diagram to briefly explain the relationship between the impedances; Fig. 10 is a thin-film body at the receiving end in an architecture indicator; Fig. 11 is a diagram of a bulk acoustic wave resonator wavelet device; In the case of the first inductor, the frequency and impedance of the first duplex inductor in the duplexer of Figures 12 (A) to 12 (C) are in accordance with the high impedance of the three types of 13 (A) and 13 (B). The relationship between the bulk acoustic wave resonator duplexer; and the thin-film bulk acoustic wave resonator double-intent 'sound wave common in Figures 14 (A) and 14 (B), which is used to set up a parallel relationship. A bulk acoustic wave may be built. The first embodiment is used to display the non-vibrator filter installed on the receiving end of the thin film bulk acoustic wave system; a schematic diagram, a resonator filter structure; a diagram, the insertion loss is suitable for the double-type ladder of the present invention The receiving end of the device is connected in series with a thin-film bulk acoustic resonance resonator to display the device of the present invention, and two electrical displays of the thin and reflective loss of the present invention. A schematic diagram of the structure is used to show the difference of the working device of the present invention. Implementation architecture. 100 Thin film bulk acoustic wave filter device 101, 103, 105, 107, 109 Thin film bulk acoustic wave filter 111, 113, 115, 117 Inductor 120 Thin film bulk acoustic wave filter device 121, 123, 125, 127, 129 Bulk acoustic wave resonator 130 Thin film bulk acoustic wave filter device at the receiving end 131, 133, 135, 137, 139 Thin film bulk acoustic wave resonator 140 Antenna end 201 Upper electrode
第17頁 578373Page 17 578373
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