TW575476B

TW575476B - Control system for in-situ feeding back a polish profile

Info

Publication number: TW575476B
Application number: TW90122202A
Authority: TW
Inventors: Chia-Lin Hsu; Shao-Chung Hu; Teng-Chun Tsai
Original assignee: United Microelectronics Corp
Priority date: 2001-09-07
Filing date: 2001-09-07
Publication date: 2004-02-11

Description

575476 --—— 五、發明說明（l) 發明之領域本發明提供一種用於一化學機械研磨（chemical mechanical pol i Shi ng，CMP)機台之控制系統，尤指一種可即時補償研磨曲面之控制系統。背景說明在半導體製程中，化學機械研磨 (chemical-mechanical polishing， CMP)製程是目前最普遍被使用，同時也是最重要的一種平坦化製程。CMP製程可用來均勻地去除一半導體晶片上具有不規則表面的 (topographical )目標薄膜層（target thin film)，使半導體晶片在經過CMP製程後能夠具有一平坦且規則的表面，以確保後續製程之良率。由於CMP製程中同時牽涉到許多複雜的製程參數，例如目標薄膜層的特性、目標薄膜層表面均勻度（uniformity)、研磨液（siurry)的成分以及 pH值、研磨墊（p〇l ishing pad)的組成、平台轉速（platen rotation speed)、晶圓载具下壓力（head d〇wn f〇rce)等等’因此製程控制一直是CMP製程的一項挑戰。習知決定CMP研磨終點的方法有很多種，其中的即是利用研磨時間（by time)來控制研磨終點。然而’ 此方法所產生的誤差非常的大，不同晶片之間的變異575476 ------ V. Description of the invention (l) Field of the invention The present invention provides a control system for a chemical mechanical polishing (CMP) machine, especially a method capable of compensating the grinding surface in real time. Control System. BACKGROUND In the semiconductor manufacturing process, chemical-mechanical polishing (CMP) process is currently the most commonly used, and it is also the most important planarization process. The CMP process can be used to uniformly remove the topographical target thin film on a semiconductor wafer, so that the semiconductor wafer can have a flat and regular surface after the CMP process to ensure subsequent processes. Yield. Because the CMP process involves many complicated process parameters, such as the characteristics of the target film layer, the uniformity of the surface of the target film layer, the composition of the polishing solution, the pH value, and the polishing pad. Composition, platen rotation speed, wafer carrier down pressure (head dwn fοrce), etc., so process control has always been a challenge for the CMP process. There are many known methods for determining the end point of CMP polishing. One of them is to control the end point of polishing by using time. However, the error produced by this method is very large. The variation between different chips

第5頁 575476 五、發明說明（2) (variation)也難以控制，而且被研磨的薄膜層需要有足夠的厚度以避免過度研磨。此外，為了避免過度研磨，在目標薄膜層下方通常會需要一研磨停止層（st〇f) Uyer)。此研磨停止層的研磨速率（rem〇val rate)通常需小於其上之目標薄膜層，換句話說，目標研磨層被研磨的速率需大於目標研磨層下方之研磨停止層。而其它研磨終點偵測方 · 法，目前最普遍被接受的方法，係利用光學原理來監測介 · 電層的CMP製程，以決定研磨終點。當使用一光偵測器 (photo detect or)來偵測CMP製程時，所偵測到之反射光強度資料會產生一週期性之規則變化，進而產生一具有週期性之圖譜。所以利用該具有週期性之圖譜，便可準確地 t 偵測出CMP製程之終點。然而，上述方法僅用於偵測CMP製程之終點，並無法針對研磨曲面做出即時（i η - s i t u )回饋，以於C Μ P製程進行當中立即校正誤差，加強控制研磨均勻度。因此如何於 CMΡ製程進行中即時補償研磨曲面（p〇iish profile)，進而增加產品良率，實為一刻不容緩的重要課題。發明概述因此本發明之主要目的在於提供一種用於一化學機械 ❶ 研磨（chemical mechanical p〇lishing，CMP)機之控制系統，以於C Μ P製程中即時補償研磨曲面（p 〇 1 i s hPage 5 575476 V. Description of the invention (2) (variation) is also difficult to control, and the film layer to be polished needs to have sufficient thickness to avoid excessive grinding. In addition, in order to avoid excessive grinding, a grinding stop layer (stOf) is usually required under the target film layer. The polishing rate of the polishing stop layer is usually smaller than the target film layer thereon. In other words, the polishing rate of the target polishing layer needs to be greater than the polishing stop layer below the target polishing layer. Other grinding end point detection methods, the most commonly accepted method at present, use optical principles to monitor the CMP process of the dielectric layer to determine the grinding end point. When a photo detector or CMP process is used to detect the CMP process, the detected reflected light intensity data will generate a periodic regular change, which will generate a periodic map. Therefore, by using the periodic map, the end point of the CMP process can be accurately detected. However, the above method is only used to detect the end of the CMP process, and it is not possible to make real-time (i η-s i t u) feedback on the polished surface, so that errors can be corrected immediately during the CMP process, and the uniformity of the grinding can be enhanced. Therefore, how to compensate the poiish profile in real time during the CMP process and increase the yield of the product is an important issue that cannot be delayed. SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to provide a control system for a chemical mechanical polishing (CMP) machine, so as to immediately compensate the polished curved surface (p 〇 1 i s h) in the CMP process.

575476 五、發明說明（3) profile)0 在本發明的最佳實施例中，該化學機械研磨機台包含有一至少包含有一第一環狀區域以及一第二環狀區域之研磨平台（polish platen)，一研磨墊（polish pad)設置於該研磨平台上，一晶圓載座（carrier head)設置於該研磨墊上方，用來承載一待研磨之晶圓。其中該晶圓載座至少另包含有用以分別對應於該第一環狀區域以及該第二環狀區域之一内圈以及一外圈，與一包含有一第一研磨液泵閥(pump 及一置之械研控制測器上。測器該第率之該第整該第二研磨磨機 nxy 一早兀，分其中 v a 1 v e )設置於研磨液泵閥設液（s 1 u r r y )供台中可即時補與該置於應裝償研以及至少一第別設置於該第該控制單元電，於依據該第一感一環狀區域以及該環差異二研晶圓連接測器第二後，以一預設之程磨液外圈磨液泵閥之研載座之内圈與第一與該置。磨曲感測狀區於該以及環狀序調供應的施環狀區域相對第二環狀區域而本發明之用面之控制系統器（sensor)以域以及該第二應之位置以相對應之位於該化學機則包含有一及一第二感環狀區域第一感測器以及該第二感之訊號比較圓受研磨速液果間以及設之程序调該第二感測器區域上之該晶整該第一研磨量，或以一預力量由於本發明之¥制系統係在研磨過程中利用該第一感測器以及該第二感測器偵測該晶圓相對應於該第一環狀區575476 V. Description of the invention (3) profile) In a preferred embodiment of the present invention, the chemical mechanical polishing machine includes a polishing platen (polish platen) including at least a first annular region and a second annular region. ), A polishing pad is disposed on the polishing platform, and a carrier head is disposed above the polishing pad for carrying a wafer to be polished. The wafer carrier at least further includes an inner ring and an outer ring corresponding to the first annular region and the second annular region, respectively, and a wafer pump valve (pump and The mechanical grinder controls the measuring device. The measuring device should be the first and the second grinding mill nxy early, divided into va 1 ve) set in the grinding liquid pump valve setting liquid (s 1 urry) for Taichung can be immediately Complement the electric circuit that should be installed in the compensating device and at least one unit that is installed in the first control unit. After connecting the second unit to the second unit of the tester according to the first sensing area and the second unit, a The inner ring and the first ring of the grinding bearing seat of the outer ring of the grinding liquid pump valve of the preset course are disposed. The application region of the friction sensing region is corresponding to the second ring region and the application ring region of the ring-shaped sequential modulation is corresponding to the control system sensor of the application surface of the present invention and the second corresponding position. The chemical machine includes a first sensor with a second sensing ring region and a second sensing signal which is relatively rounded and ground by a rapid liquid grinding chamber and a program to adjust the second sensor region. The crystal adjusts the first grinding amount, or uses a pre-force because the ¥ system of the present invention uses the first sensor and the second sensor to detect that the wafer corresponds to the first during the grinding process. Circular zone

第7頁度或薄膜厚度’並於判定該晶後、，再針對該第—研磨液泵閥磨液供應量、該晶圓載座之該研磨平台之該第一環狀區域以行调整’以即時補償研磨曲面加強控制研磨均勻度，改善產 575476Page 7 degrees or film thickness' and after determining the crystal, then adjust the supply amount of the polishing liquid of the first polishing liquid pump valve and the first annular area of the polishing platform of the wafer carrier to adjust Immediately compensate the grinding surface, strengthen the control of grinding uniformity, and improve production

域以及該第二環狀區域之溫圓表面所受研磨速率之差異以及該第二研磨液泵閥之研内圈與該外圈的施力量或該及3亥弟^一 ί哀狀區域之南度進並立即校正誤差，進而得以品良率。發明之詳細說明、請參考圖一，圖一至圖四為本發明一種用於一化學機械研磨（chemical mechanical polishing，CMP)機台中可即時補償研磨曲面（p〇l ish prof i ie)的控制系統之裝置示思圖。如圖一所示’化學機械研磨機台包含有一研磨平台（polish platen)32，一研磨塾（p〇nsh pad)34設置於研磨平台3 2上’一晶圓載座（carrier head)3 6設置於研磨塾3 4上方，用來承載一待研磨之晶圓3 8，以及一研磨液 (slurry)供應裝置4〇(未顯示於圖一中）。請參考圖二與圖三，圖二與圖三分別為研磨平台32之上視圖與晶圓載座3 6之下視圖。如圖二所示，研磨平台至少包含有一第一環狀區域4 2以及一第二環狀區域4 4，以及至少一第一感測器（s e n s 〇 r) 5 4以及一第二感測器5 6，分別設置於第一環狀區域4 2以及第二環狀區域4 4上。如圖三Of the grinding rate on the warm circular surface of the second region and the second annular region, and the force exerted by the inner ring and the outer ring of the second grinding fluid pump valve or the third region. Nandu advances and immediately corrects the error, which leads to product yield. For a detailed description of the invention, please refer to FIG. 1. FIG. 1 to FIG. 4 show a control system for a chemical mechanical polishing (CMP) machine in the present invention that can instantly compensate a polished surface (polish ish prof i ie). The device is illustrated. As shown in Fig. 1, a chemical mechanical polishing machine includes a polishing platen 32, a polishing pad 34 disposed on the polishing table 32, and a carrier head 36. Above the polishing pad 34, it is used to carry a wafer 38 to be polished, and a slurry supply device 40 (not shown in Figure 1). Please refer to FIG. 2 and FIG. 3, which are an upper view of the polishing table 32 and a lower view of the wafer carrier 36, respectively. As shown in FIG. 2, the polishing platform includes at least a first annular region 42 and a second annular region 44, and at least a first sensor 5 4 and a second sensor. 56 are respectively disposed on the first annular region 42 and the second annular region 44. Figure three

第8頁 575476 五、發明說明（5) 所示，晶圓載座3 6至少包含有分別對應於第一環狀區域42 以及第二環狀區域4 4之〆内圈4 6以及一外圈4 8。請參考圖四，圖四為研磨平台3 2之剖面圖。如圖四所示，研磨液供應裝置4 0係設於研磨平台3 2内部，且包含有一第一研磨液泵閥（pump valve)5 0設置於與第一環狀區域4 2相對應之位置以及一第二研磨液泵閥5 2設置於與第二環狀區域4 4相對應之位置。Page 8 575476 5. According to the description of the invention (5), the wafer carrier 36 includes at least the inner ring 4 6 and an outer ring 4 corresponding to the first annular region 42 and the second annular region 4 4 respectively. 8. Please refer to Figure 4, which is a sectional view of the grinding platform 32. As shown in FIG. 4, the polishing liquid supply device 40 is located inside the polishing platform 32, and includes a first polishing liquid pump valve 50 at a position corresponding to the first annular area 42. And a second polishing liquid pump valve 52 is provided at a position corresponding to the second annular region 44.

本發明用於CMP機台中可即時補償研磨曲面的控制系統另包含顯示於圖二中之第一感測器5 4以及第二感測器 5 6，與一電連接於第一感測器5 4以及第二感測器5 6之控制單元（未顯示）。其中第一感測器5 4以及第二感測器5 6係為一熱電偶（t h e r m a 1 c 〇 u ρ 1 e )或一紅外線感測器（I R sensor )，用以在CMP製程中伯測晶圓3 8相對應於第一環狀區域4 2以及第二環狀區域4 4之表面溫度，並將所測得之數據轉換為訊號傳遞至該控制單元。然後該控制單元則可依據苐一感測裔5 4以及苐二感測器5 6所傳回之訊號，並在經由運异比較第一環狀區域4 2以及第二環狀區域4 4上之溫度差來判定晶圓3 8所受研磨速率的差異後，適當地調整第_ 研磨液泵閥5 0以及第二研磨液泵閥5 2之研磨液供應量，或是再選擇性的調整晶圓載座3 6之内圈4 6與外圈4 8的施力量，以達到即時補償研磨曲面的效果。在本發明之另一實施例中，第一感測器5 4以及第二感The control system for the CMP machine according to the present invention that can instantly compensate the polished curved surface further includes a first sensor 54 and a second sensor 56 shown in FIG. 2 and an electrical connection to the first sensor 5 Control unit 4 and second sensor 56 (not shown). The first sensor 54 and the second sensor 56 are a thermocouple (therma 1 c 0u ρ 1 e) or an infrared sensor (IR sensor), which are used for the primary measurement in the CMP process. The wafer 38 corresponds to the surface temperatures of the first annular region 42 and the second annular region 44, and the measured data is converted into signals and transmitted to the control unit. Then, the control unit can compare the first and second annular regions 4 2 and 4 4 according to the signals returned by the first and second sensors 5 4 and 56. After determining the difference in the polishing rate of wafer 38 by the temperature difference, appropriately adjust the polishing liquid supply amount of the first polishing liquid pump valve 50 and the second polishing liquid pump valve 52, or adjust it selectively. The inner and outer rings 4 6 and 4 8 of the wafer carrier 36 are applied with force to achieve the effect of instantly compensating the polished surface. In another embodiment of the present invention, the first sensor 54 and the second sensor

第9頁 575476 五、發明說明（6) 測器56係為一光學感測器（opt icai sensor)，用以在CMP 製程中偵測晶圓3 8相對應於第一環狀區域4 2以及第二環狀區域44之薄膜厚度，並將所測得之數據轉換為訊號傳遞至該控制單元。該控制單元則依據第一感測器5 4以及第二感測器5 6所傳回之訊號，在經由比較第一環狀區域42以及第二環狀區域4 4上之薄膜厚度差來判定晶圓3 8所受研磨速率之差異後，適當地調整第一研磨液泵閥5 〇以及第二研磨液泵閥52之研磨液供應量，或是再選擇性的調整晶圓載座％之内圈46與外圈48的施力量，以達到即時補償研磨曲面的效果。測器中偵 4 4之制單 5 6所狀區後，狀區在本發 5 6係為測晶圓表面溫元。該傳回之域4 4上適當地域4 4之明之又一一熱 3 8相度，控制訊號之溫調整高度電偶對應並將單元，在度差研磨，以實施例中，第一感測器54以及第二感或二紅外線感測器，用以在CMP製程於第…環狀區域4 2以及第二環狀區域所測彳于，數據轉換為訊號傳遞至該控貝】依據苐一感測器5 4以及第二感測器經由^較第一環狀區域4 2以及第二環 $ 疋日日圓3 8所受研磨速率之差異平台3 2之第一環狀區域4 2以及第二環達到即時補償研磨曲面的效果。第一感測器5 4以及第二感在CMP製程中偵測晶圓38 二環狀區域4 4之薄膜厚Page 9 575476 V. Description of the invention (6) The detector 56 is an optical sensor (opt icai sensor), which is used to detect the wafer 3 8 corresponding to the first annular area 4 2 in the CMP process and The film thickness of the second annular region 44 is converted into a signal and transmitted to the control unit. The control unit determines the difference between the thicknesses of the films on the first annular region 42 and the second annular region 44 according to the signals returned by the first sensor 54 and the second sensor 56. After the difference in the polishing rate of wafer 38, adjust the polishing liquid supply amount of the first polishing liquid pump valve 50 and the second polishing liquid pump valve 52 appropriately, or adjust the wafer carrier percentage selectively. The force of the ring 46 and the outer ring 48 is applied to achieve the effect of compensating the curved surface in real time. After the detection area of the system in the detector 4 4 5 5 of the detector, the 5 5 series of the device is used to measure the surface temperature of the wafer. In the returned field 44, the appropriate region 4 4 is another one of the heat 3 8 degrees, the temperature of the control signal is adjusted, the height of the galvanic couple is corresponding, and the unit is ground in the difference. In the embodiment, the first sensing Sensor 54 and a second or two infrared sensor for measuring in the CMP process in the first and second ring regions 4 2 and the second ring region. The data is converted into a signal and transmitted to the controller. The sensor 5 4 and the second sensor pass the difference between the grinding rate of the first ring area 4 2 and the second ring $ 2 and the yen 3 8. The first ring area 4 2 and the second ring 3 2 The second ring achieves the effect of instantly compensating the ground surface. The first sensor 5 4 and the second sensor detect the film thickness of the wafer 38 and the two ring regions 4 4 during the CMP process.

在本發明之其他實施例中，測器5 6係為—光學感·測器，用以相對應於第一環狀區域4 2以及第In other embodiments of the present invention, the detector 56 is an optical sensor, which corresponds to the first annular region 42 and the first

575476 五、發明說明（7) 度’ ί將所測得之數據轉換為訊號傳遞至該控制單元。該控，單兀則依據第_感測器5 4以及第二感測器5 6所傳回之訊，’在經由比較第一環狀區域4 2以及第二環狀區域4 4上之，膜厚度差來判定晶圓3 8所受研磨速率之差異後，適當地^整研磨平台32之第一環狀區域42以及第二環狀區域44 之Τ%度’以達到即時補償研磨曲面的效果。本發明之上述各實施例中的該控制系統，可同時適用於單片式之化學機械研磨機台及多片式之化學機械研磨機台’且在生產對研磨曲面要求標準較高的產品時，亦可將研磨平台3 2劃分為超過兩個之環狀區域，搭配超過兩個之感測Is ’並將晶圓載座3 6劃分為超過兩個之同心圓區域，再使研磨液供應裝置4 0包含超過兩個之磨液泵閥。由於其操作方式與上述各實施例中之操作方式相同，故不另行贅述。相較於習知技術，本發明所提供之控制系統係在研磨過程中利用第一感測器5 4以及第二感測器5 6偵測晶圓3 8相. 對應於第一環狀區域42以及第二環狀區域44之溫度或薄膜厚度’於判定晶圓3 8表面所受研磨速率之差異後，再針對第一研磨液泵閥5 0以及第二研磨液泵閥5 2之研磨液供應量、晶圓載座3 6之内圈4 6與外圈4 8的施力量或研磨平台3 2 之第一環狀區域4 2以及第二環狀區域4 4之高度進行調整，以即時補償研磨曲面，故得以立即校正誤差，加強控制研575476 V. Description of the invention (7) Degree ’ί The measured data is converted into a signal and passed to the control unit. This control, based on the information returned by the __sensor 5 4 and the second sensor 56, "by comparing one of the first annular area 42 and the second annular area 44, After determining the difference in the polishing rate of the wafer 38 by the difference in film thickness, appropriately adjust the T% of the first annular region 42 and the second annular region 44 of the polishing platform 32 to achieve instant compensation of the polishing surface. effect. The control system in each of the above embodiments of the present invention can be applied to both a single-piece chemical mechanical polishing machine and a multi-piece chemical mechanical polishing machine ', and when producing products with higher standards for polishing surfaces It is also possible to divide the polishing platform 32 into more than two annular regions, match more than two sensing Is' and divide the wafer carrier 36 into more than two concentric circular regions, and then make the polishing liquid supply device 40 contains more than two slurry pump valves. Since the operation mode is the same as that in the above embodiments, it will not be described separately. Compared with the conventional technology, the control system provided by the present invention uses the first sensor 5 4 and the second sensor 5 6 to detect the wafer 3 8 phase during the polishing process. Corresponding to the first annular region The temperature or film thickness of 42 and the second annular region 44 is determined after the difference in the polishing rate on the surface of the wafer 38 is measured, and then the first polishing liquid pump valve 50 and the second polishing liquid pump valve 52 are polished. The amount of liquid supply, the force of the inner ring 4 6 and the outer ring 4 8 of the wafer carrier 36, or the height of the first ring-shaped area 4 2 and the second ring-shaped area 4 4 of the polishing table 3 2 can be adjusted in real time. Compensate the ground surface, so you can immediately correct the error and strengthen the control research

第11頁 575476 五、發明說明（8) 磨均勻度，改善產品良率。此外，該控制系統除了可以同時適用於單片式之化學機械研磨機台及多片式之化學機械研磨機台之外，更可以在投產具有較大尺寸的晶圓，或生產對研磨曲面要求標準較高的產品時，將研磨平台3 2劃分為超過兩個之環狀區域，搭配超過兩個之感測器，並將晶圓載座3 6劃分為超過兩個之同心圓區域，再使研磨液供應裝置4 0包含超過兩個之磨液泵閥，以相同的操作方式更精確地控制研磨曲面。以上所述僅本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明專利之涵蓋範圍。Page 11 575476 V. Description of the invention (8) The uniformity of the grinding improves the product yield. In addition, the control system can be applied to both single-chip chemical mechanical polishing machines and multi-chip chemical mechanical polishing machines. It can also be used to produce wafers with larger sizes, or to produce curved surfaces. For products with higher standards, divide the grinding table 32 into more than two circular areas, match more than two sensors, and divide the wafer carrier 36 into more than two concentric circular areas. The polishing liquid supply device 40 includes more than two polishing liquid pump valves to control the polishing surface more precisely in the same operation mode. The above are only the preferred embodiments of the present invention. Any equivalent changes and modifications made in accordance with the scope of the patent application for the present invention shall fall within the scope of the patent of the present invention.

第12頁 575476 圖式簡單說明圖示之簡單說明圖一至圖四為本發明用於一化學機械研磨機台中以即時補償研磨曲面的控制系統之裝置示意圖。圖示之符號說明 30 化學機械研磨機台 32 研磨平台 34 研磨墊 36 晶圓載座 38 晶圓 40 研磨液供應裝置 42 第一環狀區域 44 第 •— 環狀區域 46 内圈 48 外圈 50 第一研磨液泵閥 52 第二研磨液泵閥 54 第一感測器 56 第二感測器Page 12 575476 Brief description of the diagrams Brief description of the diagrams Figures 1 to 4 are schematic diagrams of the control system of the present invention used in a chemical mechanical grinding machine to control the grinding curved surface in a timely manner. Explanation of symbols in the figure 30 Chemical mechanical polishing machine table 32 Polishing platform 34 Polishing pad 36 Wafer carrier 38 Wafer 40 Polishing liquid supply device 42 First annular area 44th • — annular area 46 inner ring 48 outer ring 50 A polishing liquid pump valve 52 a second polishing liquid pump valve 54 a first sensor 56 a second sensor

第13頁Page 13

Claims

575476 六、申請專利範圍 1. 一種用於一化學機械研磨（chemical mechanical polishing, CMP)機台中可即時補償研磨曲面（polish prof i le)之控制系統，該化學機械研磨機台包含有一研磨平台（polish platen)，該研磨平台至少包含有一第一環狀區域以及一第二環狀區域，一研磨墊（ρ ο 1 i s h p a d)設置於該研磨平台上，一晶圓載座（carrier head)設置於該研磨墊上方，用來承載一待研磨之晶圓，該晶圓載座至少包含有一内圈以及一外圈，分別對應於該第一環狀區域以及該第二環狀區域，以及一研磨液（s 1 u r r y )供應裝置，該研磨液供應裝置包含有一第一研磨液泵閥（P u m p v a 1 v e )設置於與該第一環狀區域相對應之位置以及一第二研磨液泵閥設置於與該第二環狀區域相對應之位置，該控制系統包含有：至少一第一感測器（sensor )以及一第二感測器，分別設置於該第一環狀區域以及該第二環狀區域上；以及一控制單元，電連接於該第一感測器以及該第二感測器，依據該第一感測器以及該第二感測器之訊號比較該第一環狀區域以及該第二環狀區域上之該晶圓受研磨速率之差異，並依據一預設之程序調整該第一研磨液泵閥以及該第二研磨液泵閥之研磨液供應量，或依據一預設之程序調整該晶圓載座之内圈與外圈的施力量。 2. 如申請專利範af第1項之控制系統，其中該控制系統係使用於一單片式之化學機械研磨機台中或一多片式之化575476 VI. Application Patent Scope 1. A control system for chemical mechanical polishing (CMP) machine that can immediately compensate the polishing surface (polish prof i le). The chemical machine polishing machine includes a grinding platform ( polish platen), the polishing platform includes at least a first annular area and a second annular area, a polishing pad (ρ ο 1 ishpad) is disposed on the polishing platform, and a carrier head is disposed on the polishing platen Above the polishing pad is used to carry a wafer to be polished. The wafer carrier includes at least an inner ring and an outer ring, which correspond to the first annular region and the second annular region, respectively, and a polishing liquid ( s 1 urry) supply device, the polishing liquid supply device includes a first polishing liquid pump valve (Pumpva 1 ve) disposed at a position corresponding to the first annular region and a second polishing liquid pump valve is disposed at At a position corresponding to the second annular region, the control system includes: at least a first sensor (sensor) and a second sensor, respectively disposed on A first annular region and the second annular region; and a control unit electrically connected to the first sensor and the second sensor, according to the first sensor and the second sensor The signal compares the difference in the polishing rate of the wafer on the first annular region and the second annular region, and adjusts the first polishing liquid pump valve and the second polishing liquid pump valve according to a preset procedure. The supply amount of the polishing liquid, or the force applied to the inner ring and the outer ring of the wafer carrier is adjusted according to a preset procedure. 2. For example, the control system of the patent application af item 1, wherein the control system is used in a single-chip chemical mechanical polishing machine or a multi-chip chemical

第14頁 575476 六、申請專利範圍學機械研磨機台中。 3. 如申請專利範圍第1項之控制系統，其中該第一感測器以及該第二感測器為一熱電偶（thermal couple)或一紅外線感測器（I R s e n s 〇 r )。 4. 如申請專利範圍第3項之控制系統，其中該第一感測器以及該第二感測器傳遞之訊號係為該晶圓表面之溫度，且該預設之程序係依據該化學機械研磨製程中該第一環狀區域以及該第二環狀區域之溫度差調整該研磨液之供應量，或調整該晶圓載座之施力量。 5. 如申請專利範圍第1項之控制系統，其中該第一感測器以及該第二感測器為一光學感測器（〇 p t i c a 1 s e n s 〇 r)。 6. 如申請專利範圍第5項之控制系統，其中該第一感測器以及該第二感測器傳遞之訊號係為該晶圓表面之薄膜厚度，且該預設之程序係依據該化學機械研磨製程中該第一環狀區域以及該第二環狀區域之薄膜厚度差調整該研磨液之供應量，或調整該晶圓載座之施力量。 7. —種用於一化學機械研磨（chemical mechanical polishing， CMP)機台中可即時補償研磨曲面（polish p r 〇 f i 1 e )之控制系統，該化學機械研磨機台包含有一研磨Page 14 575476 VI. Scope of patent application In mechanical grinding machine. 3. For example, the control system of the first patent application range, wherein the first sensor and the second sensor are a thermal couple or an infrared sensor (I R s en s 0 r). 4. For the control system of item 3 of the patent application, wherein the signal transmitted by the first sensor and the second sensor is the temperature of the wafer surface, and the preset procedure is based on the chemical machinery The temperature difference between the first annular region and the second annular region during the polishing process adjusts the supply amount of the polishing liquid or adjusts the force applied to the wafer carrier. 5. The control system according to item 1 of the patent application scope, wherein the first sensor and the second sensor are optical sensors (〇 p t i c a 1 s en s 〇 r). 6. If the control system of item 5 of the patent application scope, wherein the signal transmitted by the first sensor and the second sensor is the film thickness of the wafer surface, and the preset procedure is based on the chemistry In the mechanical polishing process, the film thickness difference between the first annular region and the second annular region adjusts the supply amount of the polishing liquid, or adjusts the application force of the wafer carrier. 7. —A control system for a chemical mechanical polishing (CMP) machine that can immediately compensate the polishing surface (polish p r 〇 f i 1 e), the chemical mechanical polishing machine includes a polishing

第15頁 575476 六、申請專利範圍平台（polish platen)，該研磨平台至少包含有一第一環狀區域以及一第二環狀區域，一研磨墊（P〇1 ish pad)設置於該研磨平台上，一晶圓載座（carrier head)設置於該研磨墊上方且與該研磨墊相對應之位置，用來承載一待研磨之晶圓，以及一研磨液（s 1 u r r y )供應裝置’該研磨液供應裝置包含有一第一研磨液泵閥（PumP va!ve)設置於與該第一環狀區域相對應之位置以及一第二研磨液泵閥設置於與該第二環狀區域相對應之位置，該控制系統包含有：至少一第一感測器（sensor )以及一第二感測器，分別設置於該第一環狀區域以及該第二環狀區域上；以及一控制單元，電連接於該第一感測器以及該第二感測器，依據該第一感測器以及該第二感測器之訊號比較該第一環狀區域以及該第二環狀區域上之該晶圓受研磨速率之差異，並依據一預設之程序調整該第一研磨液泵閥以及該第二研磨液泵閥之研磨液供應量。 8 ·如申請專利範圍第7項之控制系統，其中該控制系統用於一單片式之化學機械研磨機台中或一多片式之化予機械研磨機台中。哭·、如申請專利範圍第7項之控制系統，其中該第一感測外^及該第二感測裔·為一熱電偶（thermal couple)或一紅綠感測器（I R s e n s 〇 r )。Page 15 575476 VI. Patent application platform (polish platen). The polishing platform includes at least a first annular area and a second annular area. A polishing pad is disposed on the polishing platform. A carrier head is disposed above the polishing pad and at a position corresponding to the polishing pad, and is used to carry a wafer to be polished, and a polishing liquid (s 1 urry) supply device 'the polishing liquid The supply device includes a first polishing liquid pump valve (PumP va! Ve) disposed at a position corresponding to the first annular region and a second polishing liquid pump valve disposed at a position corresponding to the second annular region The control system includes: at least a first sensor and a second sensor, which are respectively disposed on the first annular area and the second annular area; and a control unit, which is electrically connected At the first sensor and the second sensor, the wafers on the first annular region and the second annular region are compared according to the signals of the first sensor and the second sensor. Difference in grinding rate And according to a predetermined program of adjusting the first valve polishing liquid and a polishing liquid supply valve of the second polishing liquid. 8. The control system according to item 7 of the scope of patent application, wherein the control system is used in a single-piece chemical mechanical polishing machine table or a multi-plate chemical conversion machine polishing machine table. Crying, such as the control system for the seventh item in the scope of patent application, wherein the first sensing source ^ and the second sensing family are a thermal couple or a red-green sensor (IR sens 〇r ).

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575476 六、申請專利範圍 I 0 ·如申請專利範圍第9項之控制系統，其中該第一感測器以及該第二感測器傳遞之訊號係為該晶圓表面之溫度，且該預設之程序係依據該化學機械研磨製程中該第一環狀區域以及該第二環狀區域之溫度差調整該研磨液之供應量。 II ·如申請專利範圍第7項之控制系統，其中該第一感測 - 器以及該第二感測器為一光學感測器（〇 P t i c a 1 s e n S 0 r )。 1 2 ·如申請專利範圍第1 1項之控制系統，其中該第一感測 “ 器以及該第二感測器傳遞之訊號係為該晶圓表面之薄膜厚〇 i，且該預設之程序係依據該化學機械研磨製程中該第一 i狀區域以及該第二環狀區域之薄膜厚度差調整該研磨液之供應量。 13 —種用於一 4匕學機械研磨(chem i cal mechanical pQl ishing， CMP)機台中可即時補償研磨曲面（P〇1 ish \of i le)之控制系統’該化學機械研磨機台包含有一研磨 H (polish platen) ’該研磨平台至少包含有一第一環 I域以及一第二環狀區域，一研磨墊（P〇1 ish Pad)設置於;研磨平台上’一晶圓載座（Carrier head)設置於該 ❶ 讲廇7塾上方且與該研磨墊相對應之位置，用來承載一待研研日n，以及一研·磨液（slurry)供應裝置，該控制系統磨之日日圓包含有：575476 VI. Patent application scope I 0 · If the control system of the patent application item 9 is used, the signal transmitted by the first sensor and the second sensor is the temperature of the wafer surface, and the preset The procedure is to adjust the supply amount of the polishing liquid according to the temperature difference between the first annular region and the second annular region in the chemical mechanical polishing process. II. The control system according to item 7 of the application, wherein the first sensor and the second sensor are an optical sensor (〇 P t i c a 1 s e n S 0 r). 1 2 · The control system according to item 11 of the scope of patent application, wherein the signal transmitted by the first sensor and the second sensor is the film thickness of the wafer surface, and the preset The procedure is to adjust the supply amount of the polishing liquid according to the film thickness difference between the first i-shaped region and the second annular region in the chemical mechanical polishing process. 13 — A kind of chem i cal mechanical polishing pQl ishing (CMP) control system capable of real-time compensation of the polished surface (P0ish / ofle) The chemical mechanical polishing machine includes a polishing H (polish platen) 'The polishing platform includes at least a first ring In the I area and a second annular area, a polishing pad (P0ish pad) is disposed; a polishing head (Carrier head) is disposed on the polishing platform above the ❶ 廇 7 塾 and is in contact with the polishing pad. The corresponding position is used to carry a research day n to be researched and a research slurry supply device. The control system grinds the Japanese yen to include:

----一 % 17 I 575476 六、申請專利範圍至少一第一感測器（sensor )以及一第二感測器，分別設置於該第一環狀區域以及該第二環狀區域上；以及一控制單元，電連接於該第一感測器以及該第二感測器，依據該第一感測器以及該第二感測器之訊號比較該第一環狀區域以及該第二環狀區域上之該晶圓受研磨速率之差異，並依據一預設之程序調整該研磨平台之該第一環狀區域以及該第二環狀區域高度。 1 4.如申請專利範圍第1 3項之控制系統，其中該控制系統係使用於一單片式之化學機械研磨機台中或一多片式之化學機械研磨機台中。 1 5.如申請專利範圍第1 3項之控制系統，其中該第一感測器以及該第二感測器為一熱電偶（thermal couple)或一紅外線感測器（I R s e n s 〇 r )。 1 6.如申請專利範圍第1 5項之控制系統，其中該第一感測器以及該第二感測器傳遞之訊號係為該晶圓表面之溫度，且該預設之程序係依據該化學機械研磨製程中該第一環狀區域以及該第二環狀區域之溫度差調整該研磨平台之該第一環狀區域以及該第二環狀區域高度。 1 7.如申請專利範圍’第1 3項之控制系統，其中該第一感測器以及該第二感測器為一光學感測器（〇 p t i c a 1 s e n s 〇 r )。---- One% 17 I 575476 6. At least one first sensor (sensor) and one second sensor that are in the scope of patent application are respectively arranged on the first annular area and the second annular area; And a control unit electrically connected to the first sensor and the second sensor, and comparing the first ring region and the second ring according to the signals of the first sensor and the second sensor The wafer is subjected to a difference in polishing rate on the shaped region, and the heights of the first annular region and the second annular region of the polishing platform are adjusted according to a preset procedure. 14. The control system according to item 13 of the scope of patent application, wherein the control system is used in a single-chip chemical mechanical polishing machine or a multi-chip chemical mechanical polishing machine. 1 5. The control system according to item 13 of the scope of patent application, wherein the first sensor and the second sensor are a thermal couple or an infrared sensor (I R s en s 〇 r). 16. The control system according to item 15 of the scope of patent application, wherein the signal transmitted by the first sensor and the second sensor is the temperature of the wafer surface, and the preset procedure is based on the The temperature difference between the first annular region and the second annular region in the chemical mechanical polishing process adjusts the heights of the first annular region and the second annular region of the polishing platform. 1 7. The control system according to item 13 of the scope of the patent application, wherein the first sensor and the second sensor are optical sensors (〇 p t i c a 1 s en s 0 r).

第18頁 575476 六、申請專利範圍 1 8.如申請專利範圍第1 7項之控制系統，其中該第一感測器以及該第二感測器傳遞之訊號係為該晶圓表面之薄膜厚度，且該預設之程序係依據該化學機械研磨製程中該第一環狀區域以及該第二環狀區域之薄膜厚度差調整該研磨平台之該第一環狀區域以及該第二環狀區域高度。 iPage 18 575476 VI. Application for Patent Scope 1 8. For the control system of Item 17 for Patent Application Scope, wherein the signal transmitted by the first sensor and the second sensor is the thickness of the film on the surface of the wafer And the preset procedure is to adjust the first annular region and the second annular region of the grinding platform according to the film thickness difference between the first annular region and the second annular region in the chemical mechanical polishing process height. i