TW574757B - Image sensor, light condensing apparatus of image sensor and its manufacturing method - Google Patents
Image sensor, light condensing apparatus of image sensor and its manufacturing method Download PDFInfo
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574757 五、發明說明（1) 【發明領域】 本發明係有關於一種影像感測器（i m a g e s e n s 〇 r )、 影像感測器的聚光裝置及其製造方法，且特別是有關於一 種可同時增加聚光裝置之聚焦長度（focus length)和光 通量（1 um i nous f 1 ux )之影像感測器、影像感測器的聚 光裝置及其製造方法。 【發明背景】 傳統的影像感測包括CCD (Charge Coupled Device， 電荷藕合元件）影像感測與CMOS (complementary metal oxide semiconductor，互補金屬氧化半導體）影像感 測。 一般CMOS影像感測器包括用以偵測光線的感光元件 (photo detector)以及將偵測到的光轉換成電子訊號的 邏輯電路。通常可藉由增加影像感測器的有效透光面積比 率（f i 1 1 f a c t 〇 r )，來增加感測器的靈敏度，然而因為 空間有限，有效透光面積比率（fill fact〇r)並無法進 一步增加。所謂的有效透光面積比率（f丨丨丨fact〇r )是 指感光區的面積對像素區的面積之比值。傳統上，為了姆 加影像感測器對光的靈敏度，會使用微透鏡（m i cr〇—曰 lenses )的形成技術來聚集和聚焦入射光在感光元件上。 為了使影像感測器可以偵測並提供影像，必需在用以 接收光線並產生和聚積電荷載子的感光元件上方設置色參 濾鏡陣列（color filter array，CFA)。此色彩濾鏡陣^ 列通常由RGB構成，而微透鏡通常放置在色彩濾鏡陣列上574757 V. Description of the Invention (1) [Field of the Invention] The present invention relates to an image sensor, a light condensing device of the image sensor, and a manufacturing method thereof, and in particular to a method that can simultaneously increase Focusing device (focus length) and luminous flux (1 um inus f 1 ux) image sensor, focusing device of image sensor and manufacturing method thereof. BACKGROUND OF THE INVENTION Traditional image sensing includes CCD (Charge Coupled Device) image sensing and CMOS (complementary metal oxide semiconductor) image sensing. A general CMOS image sensor includes a photo detector for detecting light and a logic circuit for converting the detected light into an electronic signal. Generally, the sensitivity of the sensor can be increased by increasing the effective light transmission area ratio (fi 1 1 fact 〇r) of the image sensor. However, due to limited space, the effective light transmission area ratio (fill fact0r) cannot be increased. Further increase. The so-called effective light transmission area ratio (f 丨 丨 丨 fact〇r) refers to the ratio of the area of the photosensitive area to the area of the pixel area. Traditionally, in order to increase the light sensitivity of the MEMS image sensor, a micro lens (mircro) lens forming technology is used to focus and focus the incident light on the photosensitive element. In order for the image sensor to detect and provide an image, a color filter array (CFA) must be set above the photosensitive element that receives light and generates and accumulates charge carriers. The color filter array ^ is usually composed of RGB, and the microlenses are usually placed on the color filter array.
0503-8260TWf ； TSMC2002-0103 ； Amy.ptd 第5頁 574757 五、發明說明（2) 方，用來增加影像感測器的光敏感产。 傳統的C Μ 0 S影像感測器需= 斤多 而要的内連線包括〆贋夕日日矽 層和夕曰層❿在最上層的金屬層上通常會覆蓋-層 保[=sslvation Uyer)，再進行色彩慮鏡陣列和 微透鏡的製程。 因此’每一像素的感光元件（通常是光二極體）和色 彩慮鏡陣列之間的厚度若增加，會導致光大量的損 失。 。合第1八圖說明傳統之影像感測器的製造方法 、，百 體矽基底100中形成光二極體102，而每-個 光二極體102均有其對庫的雷曰 $ 対應的電晶體，用以讀取影像資料。 傳統上，係利用一層導緩i ?社 而道硷9㈣y ^、、M 1 2做内連線以及電晶體的閘極 ，而導線11 2間係利用氯化石々鹿彳、j , - 虱化夕層11 4做電性隔離。之後，覆 128，並於保護層128上方彤成=i = SS1Vation layer ) ^ ^ ^ ^ Q Π 方形成色衫濾鏡陣列1 3 0。繼續於 色心/慮鏡陣列1 3 0的上方开彡# i=f ^ 矽声128，缺接i 層透明且平坦化的氧化 夕層1 28…、後在此平坦化的氧化矽層 透鏡142a組成的微透鏡陣上形成由許夕被 女土於士人τ 平U4Z其中微透鏡142a的掣诰 方法係於平坦化的氧化矽層i3 2a 影製程（deVeloping pr〇ce 先阻層’精由顯 理，以將圖案化的光阻層完全融化 力，以形成微透鏡I42a。 j用/、本身的表面張 然而，隨著像素區110的面積縮小 提高内連線的導線層數， U未以下，必須 数才此70成所需的連線要求，如第0503-8260TWf; TSMC2002-0103; Amy.ptd Page 5 574757 5. Description of the invention (2) Fang, used to increase the light-sensitive output of image sensors. The traditional C Μ 0 S image sensor requires a large amount of internal wiring, including the silicon layer and the silicon layer, which are usually covered on the top metal layer-layer protection [= sslvation Uyer) Then, the process of color filter array and micro lens is performed. Therefore, if the thickness between the photosensitive element (usually a photodiode) and the color filter array of each pixel is increased, a large amount of light will be lost. . Figure 18 illustrates the traditional method of manufacturing an image sensor. A photodiode 102 is formed in the silicon substrate 100, and each photodiode 102 has its own electricity to the library. Crystal for reading image data. Traditionally, a layer of lead 导 9 ㈣ 社, M 、, M 1 2 is used as the interconnector and the gate of the transistor, and the wire 11 2 is made of chlorite stag, snail, and lice. The evening layer 11 4 is electrically isolated. After that, cover 128, and form a color filter filter array 130 on the protective layer 128 to form i = SS1Vation layer) ^^^^^. Continue on top of the color center / mirror array 1 3 0 # i = f ^ Silicon Acoustic 128, missing the i-layer transparent and planarized oxide layer 1 28 ..., and then the planarized silicon oxide lens A micro lens array composed of 142a is formed by Xu Xi, a female soiler and a gentleman τ flat U4Z. The method of controlling the micro lens 142a is based on a flattened silicon oxide layer i3 2a. From the reasoning, the patterned photoresist layer is completely melted to form the microlens I42a. The surface of itself is stretched. However, as the area of the pixel region 110 is reduced, the number of inner conductor lines is increased, U Not the following, you must count the 70% of the required connection requirements, such as
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1β圖1示的内連線結構120，圖中係以三層導線112表示。 在此2況下，必須提高微透鏡142a的聚焦長度才足以使入 射光能有效地聚集在光二極體1 0 2的區域。而傳統提高微 透鏡142a的聚焦長度之方法係藉由提高其曲率半徑來達 成。 ’、 雖然^南微透鏡1 4 2 a的曲率半徑可以增加聚焦長度， 但卻會犧牲光通量，反而降低影像感測器的靈敏度，所擷 取到的影像可能因此而失真。 因此’如何同時提高微透鏡的聚焦長度和增加光通量 為重要的課題。 【發明之目的及概要】 有鑑於上述之微透鏡的聚焦長度和光通量所面臨之缺 點’本發明提供一種可以同時增加微透鏡之聚焦長度以及 提高光通量的方法及結構。 本發明提供一種影像感測器之聚光裝置，其係設置於 色彩濾鏡陣列上，此聚光裝置包括複數第一微透鏡、一覆 蓋層和複數第二微透鏡。其中，第一微透鏡係設置於色彩 濾、鏡陣列上，且每一第一微透鏡對應於每一像素區。覆蓋 層係覆蓋於第一微透鏡上，並做為第二微透鏡的支撐層， 此覆蓋層為具有平坦表面的透明材質。第二微透鏡係設置 於覆蓋層上，且每一像素區設置至少一個第二微透鏡。 上述之影像感測器之聚光裝置，其中第二微透鏡的曲 率半徑小於第一微透鏡的曲率半徑。 本發明並提供一種影像感測器，其結構簡述如下。將1β The interconnect structure 120 shown in FIG. 1 is represented by three layers of wires 112. In these two cases, the focal length of the microlens 142a must be increased so that the incident light can be effectively concentrated in the area of the photodiode 102. The traditional method of increasing the focal length of the microlens 142a is achieved by increasing its radius of curvature. ′, Although the curvature radius of the nannan lens 1 4 2 a can increase the focal length, it will sacrifice the light flux, but reduce the sensitivity of the image sensor, and the captured image may be distorted as a result. Therefore, how to increase both the focal length and the luminous flux of a microlens is an important issue. [Objective and Summary of the Invention] In view of the above-mentioned shortcomings of the focal length and the luminous flux of the microlens', the present invention provides a method and structure that can simultaneously increase the focal length of the microlens and improve the luminous flux. The invention provides a light condensing device for an image sensor, which is arranged on a color filter array. The light condensing device includes a plurality of first microlenses, a covering layer and a plurality of second microlenses. The first microlenses are disposed on the color filter and the mirror array, and each first microlens corresponds to each pixel area. The cover layer covers the first micro lens and serves as a support layer for the second micro lens. The cover layer is a transparent material with a flat surface. The second microlens is disposed on the cover layer, and each pixel region is provided with at least one second microlens. In the light condensing device of the image sensor, the radius of curvature of the second microlens is smaller than the radius of curvature of the first microlens. The invention also provides an image sensor, the structure of which is briefly described as follows. will
0503-8260TO ； TSMC2002-0103 ； Amy.ptd 第7頁 574757 於基底 層設置 置於透 鏡陣列 構成， 層為具 像感測 二微透 透鏡陣 微透鏡 一像素 像感測 曲率半 供一種 基底中 置於基 結構上。將複數第— 一第一微透鏡對應於 透鏡上。將複數第二 區設置至少一個第二 上述之影像感测 第一微透鏡的曲率半 本發明並提供_ 中，且 於基底 明絕緣 上，此 且相鄰 有平坦 器，其 鏡陣列 列係由 陣列係 區設置 素區設置 對應於感 。並將疊 透鏡組係 微鏡鏡陣 透明材質 微透鏡組 ，並將覆 一微透鏡 第二微透 一微透鏡 器’其中第二 徑。 〜k感測器’其結構簡述如下。將戌 ，且每一像素區設置一感光元件。^ 滤鏡陣列設置於内連、線 色彩濾鏡陣列上，且每 將覆蓋層設置於第—微 覆蓋層上，且每一像素 微透鏡的曲率半捏小於 五、發明說明（4) 感光元件設置 將透明絕緣疊 彩濾鏡陣列設 設置於色彩濾 微透鏡陣列所 覆蓋層，覆蓋 上述之影 透鏡陣列和第 ，其中第一微 於下層，第二 位於上層，每 二微透鏡。 上述之影 第一微透鏡的 本發明提 光元件設置於 内連線結構設 每一像 上，且 疊層上 疊層微 兩層之 表面的 中疊層 所構成 許多第 由許多 一個第 底上。將色彩 微透鏡設置於 每一像素區。 微透鏡設置於 微透鏡。 器，其中第二 徑。 牙重影像感測器 一感光元件 光元件。將色 層微透鏡組 由至少雨層的 列間設置/廣 例如由第一微 盖層設於其間 所構成，且位 鏡所構成，且 和至少一個第 微透鏡的曲率半後小於 的 製造方法，其方法0503-8260TO; TSMC2002-0103; Amy.ptd page 7 574757 The lens layer is placed on the substrate layer, and the layer consists of two sensors: microsensor lens array microlens, one pixel image sensor curvature curvature, half for one substrate. On the base structure. The plural first microlenses correspond to the lenses. A plurality of second regions are provided with at least one of the second above-mentioned image sensing first microlenses. The curvature of the present invention is provided in the present invention, and is provided on the base bright insulation, and there are adjacent flat devices. The mirror array row is formed by Array system area settings The prime area settings correspond to the senses. The superimposed lens group is a micro-mirror array, a transparent material micro-lens group, and will be covered with a micro-lens, a second micro-transmittance, and a micro-lens device. The structure of a ~ k sensor 'is briefly described below.戌 and a photosensitive element is set in each pixel area. ^ The filter array is set on the interconnected, linear color filter array, and each cover layer is set on the first micro cover layer, and the curvature of the microlens of each pixel is less than five. Explanation of the invention (4) Photosensitive element Setting The transparent insulating stacked color filter array is arranged on the cover layer of the color filter microlens array, covering the above-mentioned shadow lens array and the first, wherein the first is slightly lower than the lower layer and the second is located on the upper layer with every two microlenses. The above-mentioned light-emitting element of the first microlens of the present invention is disposed on each image of the interconnect structure, and the middle layer of the surface of the two micro-layers on the layer is composed of a plurality of first layers and a plurality of first layers. . Color microlenses are set in each pixel area. The micro lens is disposed on the micro lens. Device, which has a second diameter. Dental image sensor A light-sensitive element Light element. Manufacturing method in which color layer microlens group is formed by at least rain layer rows, for example, a first microcap layer is interposed therebetween, and a bit mirror is formed, and the curvature of at least one first microlens is less than half after the curvature , Its method
574757574757
五、發明說明（5) 述如下。首先提供基底，其中具有感光元件。於基广 , 成多層内連線結構、保護層、色彩濾鏡陣列和平挺^上形 平坦層上形成第一微透鏡陣列，此第一微透鏡陣列:由= 數第一微透鏡構成。接著於第一微透鏡陣列上形成二厣= 蓋層。之後於覆蓋層上形成第二微透鏡陣列，此第二二= 鏡陣列係由複數第二微透鏡構成。 ~ 上述之影像感測器的製造方法，其中第一微透鏡陣列 的製造方法包括：於保護層上形成具有島狀圖案的第一圖 案化樹脂層，且每一感光元件對應一個島狀圖案；並對第 圖案化树月曰層進行熱處理，使第一圖案化樹脂層轉為第 一微透鏡陣列。 … 上述之影像感測器的製造方法，其中第二微透鏡陣列 的製造方法包括：於覆蓋層上形成具有島狀圖案的第二圖 案化樹脂層’每一感光元件對應至少一個島狀圖案；並對 第二圖案化樹脂層進行熱處理，使第二圖案化樹脂層轉為 第二微透鏡陣列。 上述之影像感測器的製造方法，其中第二微透鏡的曲 率半徑小於第一微透鏡的曲率半徑。 發明詳細說明 為了同時增加聚焦長度和光通量，本發明提供一種聚 光裝置設置於色彩濾鏡陣列的上方，此聚光裝置由至少兩 層的微透鏡所構成，最上層的微透鏡具有較小的曲率半徑 ，可以增加入射光的光通量，最下層的微透鏡具有較大的 曲率半徑’具有較大的聚焦長度，使入射光可以有效地聚5. Description of the invention (5) is described below. A substrate is first provided with a photosensitive element therein. In Jiguang, a multilayer interconnect structure, a protective layer, a color filter array, and a flat shape are formed on the flat layer. A first microlens array is formed by the first microlens array. Then, two 厣 = cap layers are formed on the first microlens array. A second microlens array is then formed on the cover layer. This second two = mirror array is composed of a plurality of second microlenses. ~ The manufacturing method of the above image sensor, wherein the manufacturing method of the first microlens array includes: forming a first patterned resin layer having an island pattern on the protective layer, and each photosensitive element corresponds to an island pattern; A heat treatment is performed on the first patterned tree moon layer to turn the first patterned resin layer into a first microlens array. … The method for manufacturing an image sensor as described above, wherein the method for manufacturing the second microlens array includes: forming a second patterned resin layer having an island pattern on the cover layer; each photosensitive element corresponds to at least one island pattern; The second patterned resin layer is heat-treated to turn the second patterned resin layer into a second microlens array. In the above method of manufacturing an image sensor, a curvature radius of the second microlens is smaller than a curvature radius of the first microlens. Detailed description of the invention In order to increase the focusing length and the light flux at the same time, the present invention provides a light condensing device which is arranged above the color filter array. The radius of curvature can increase the luminous flux of the incident light. The lowermost microlens has a larger radius of curvature, and has a larger focal length, so that the incident light can be effectively focused.
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焦在感光元件上。當入射光依序穿透具有較小的曲率半徑 之微透鏡和具有較大的曲率半徑之微透鏡，即可同時達到 增加聚焦長度和增加光通量的目的。 以下係以第一實施例、第二實施例和第三實施例詳細 說明本發明。 第一實施例：影像感測器的結構 第2圖係綠示一種影像感測器，此影像感測器包括設 置於基底200中之感光元件2〇2、色彩濾鏡陣列230、置於 色彩濾鏡陣列2 3 0上方之疊層微透鏡組2 4 〇、以及置於感光 元件2 0 2和色彩濾鏡陣列2 3 〇之間之透明絕緣疊層2 2 〇 a。 上述之感光元件202例如是光二極體（photo diode )’且每一像素區2丨〇均設置對應之一感光元件2 〇 2。 上述之透明絕緣疊層2 2 〇 a係為内連線結構2 2 0的一部 份’且位於感光元件2 〇 2上方。此内連線結構2 2 0中具有多 層導線2 1 2 ’通常最下層的導線2丨2為複晶矽層，其係做為 閘極電極和字元線之用，其他層的導線2丨2則為金屬層。 導線2 1 2之間為絕緣材質所包圍，此絕緣材質例如為具光 透性的氧化石夕。 上述之色彩濾鏡陣列230和透明絕緣疊層22 0a (或内 連線結構220 )之間更包括放置一層保護層（passiva^i〇n layer ) 228，此保護層228為透明的材質且具有平坦的表 面’其材質可為氮化矽（SiN )或氮氧化矽（Si ON )。 上述之色彩濾鏡陣列23〇和疊層微透鏡組24 0之間更包 括放置一層平坦層232，此平坦層232為透明的材質且具有Focus on the photosensitive element. When the incident light sequentially penetrates the microlens with a smaller curvature radius and the microlens with a larger curvature radius, the purposes of increasing the focal length and increasing the luminous flux can be achieved at the same time. Hereinafter, the present invention will be described in detail with reference to the first embodiment, the second embodiment, and the third embodiment. The first embodiment: the structure of the image sensor. FIG. 2 shows an image sensor in green. The image sensor includes a photosensitive element 202, a color filter array 230, and a color filter. A laminated microlens group 24O above the filter array 230, and a transparent insulating laminate 2202a placed between the photosensitive element 202 and the color filter array 2330. The above-mentioned photosensitive element 202 is, for example, a photo diode, and a corresponding photosensitive element 202 is provided in each pixel region 2o. The above-mentioned transparent insulating laminate 2 20 a is a part 'of the interconnect structure 2 2 0 and is located above the photosensitive element 202. This interconnect structure 2 2 0 has multiple layers of conductors 2 1 2 'Usually the lowermost conductor 2 丨 2 is a polycrystalline silicon layer, which is used for gate electrodes and word lines, and other layers of conductors 2 丨2 is a metal layer. The wires 2 1 2 are surrounded by an insulating material. The insulating material is, for example, a light-transmitting oxidized stone. The above-mentioned color filter array 230 and the transparent insulation stack 220a (or the interconnect structure 220) further include a passivation layer 228, which is a transparent material and has a The flat surface 'can be made of silicon nitride (SiN) or silicon oxynitride (Si ON). The above-mentioned color filter array 23 and the laminated microlens group 240 further include a flat layer 232, which is a transparent material and has
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平坦的表面 240 〇 其材質可為氧化矽 用以支撐疊層微透鏡組 上述之豐層微透鏡组2 4 〇在山r 24 2和246所構成，在此圖和^、兩層的微透鏡陣列 微透鏡陣列242和246之間更設置—且二=f =，而兩 層（〇VerC〇ating layer) 244，以=坦表面的覆蓋 246的支撐層。並中，下# %做為上層之微透鏡陣列 八 下層之被透鏡陣列2 4 2係由平λ刑μ 微透鏡242a排成陣列所構成，且浐 的 由平凸型的微透鏡246a排成陣列所^从透鏡陣列246亦 每一像素區210均對應一個微透鏡以“和一個微 246:。其’’上層之微透鏡246a為具有較大的光量子效兄率 】Photo QUantum efflciency)之透鏡，具有較小的曲J =，且表面積大，其主要的功用係用以增加入 通罝。而下層之微透鏡242a具有較大的曲率半俨，其主$ =用，用以增加聚焦長度，使入射光可以有效地聚 感光元件上。藉此達到同時增加聚焦長度和增加光通量 目的0 上述之微透鏡242a和246a的材質可為苯酚樹脂 (Phenolic resin)、三聚氰胺樹脂（melamine resin )、環氧樹脂（epoxy resin)、或其他類似此性質者。 而置於兩微透鏡陣列242和246之間之覆蓋層244的材質為 透明的光阻材質，可為甲基醚丙二醇醋酸醋、乙基_丙 醇醋酸酯、或丙烯酸聚合物。 土 · 第二實施例··影像感測器的結構The flat surface 240 〇 Its material can be silicon oxide to support the laminated micro lens group of the above-mentioned layered micro lens group 2 4 〇 in the mountain r 24 2 and 246, in this figure and ^, two-layer micro lenses The array microlens arrays 242 and 246 are more arranged-and two = f =, and two layers (oVerCoating layer) 244, with a support layer covering the surface of 246. In the middle, the lower #% is the upper microlens array. The lower lower lens array 2 4 2 is composed of flat λ μ μ lenses 242a arranged in an array, and the flat micro convex lens 246a is arranged in an array. The array lens 246 and each pixel region 210 each correspond to a micro lens with "and a micro 246 :." The upper micro lens 246a is a lens with a larger optical quantum efficiency. Photo QUantum efflciency) Has a small curvature J = and a large surface area, and its main function is to increase the entrance. The lower micro lens 242a has a larger curvature half, and its main $ = is used to increase the focal length. So that the incident light can be effectively focused on the photosensitive element. This achieves the purpose of simultaneously increasing the focal length and increasing the luminous flux. The material of the microlenses 242a and 246a can be phenol resin, melamine resin, and ring. Epoxy resin, or other similar properties. The material of the cover layer 244 placed between the two microlens arrays 242 and 246 is a transparent photoresist material, which can be methyl ether propylene glycol acetate, ethyl _ C Alcohol acetate or acrylic polymer. Soil · Second embodiment · · Structure of image sensor
0503-8260TWf ； TSMC2002-0103 ; Amy.ptd 第 η 胃— -----__ 574757 五、發明說明（8) 弟3圖係纟會示另一種影像感剛器，/ 設置於基底20 0中之感光元件202此影像感測器包括 於色彩遽鏡陣列230上方之*層微透於^鏡陣列230、置 光元件20 2和色彩濾鏡陣列23〇之間兄、，且250、以及置於感 在第3圖中的元件與第2圖相同緣疊層22。、 號，在此不對相同的部份再多做說明。刀糸使用相同的才示 上述之色彩濾鏡陣列230和透明絕 連線結構2 2 0 )之間更包括放置—屏且a 50503-8260TWf; TSMC2002-0103; Amy.ptd The η stomach — -----__ 574757 V. Description of the invention (8) The 3rd picture system will show another image sensor, / set in the base 20 0 Photosensitive element 202 This image sensor includes a layer above the color filter array 230 which is slightly transparent between the mirror array 230, the light-setting element 202 and the color filter array 230, and 250, and The components shown in FIG. 3 are stacked on the same edge as in FIG. 2. , No. I won't explain the same part more here. The same display is used for the knife blade. The color filter array 230 and the transparent insulation wiring structure 2 2 0) above include placement-screen and a 5
228 = 的”广A 括放組25°…包 層微透鏡㈣0。 才貝τ為乳化石夕，用以支撐疊 在此實施例之疊層微透鏡組25〇係由至少兩層的微透 :Γ::】4:戶:構成’在此圖和實施例中係以兩層為 例’而兩被透鏡陣列2 4 ? 9 R μ $ & &罗# 間更設置一層具有平坦表 Α φ復k ，以做為上層之微透鏡陣列2 5 6的支撐層。 ^ 1 2 i Ϊ微透鏡陣列242係由平凸型的微透鏡242a排 二= !ί,且上層之微透鏡陣列256係由平凸型的微 透鏡2 4 6 a排成陣列所構成。 每:像素區21 〇均對應—個微透鏡242&和多個微透鏡 ^ 中，上層之微透鏡2 56a為具有較大的光量子效率 j鏡’具有較小的曲率半徑，且表面積大，纟主要的功 :m:射光的光通量。而下層之微透鏡以仏具有 乂白、率半徑，其主要的功用係用以增加聚焦長度，使228 = ”Wide A” 25 °… cladding micro lens ㈣0. Cai Bei τ is an emulsified stone, which is used to support the laminated micro lens group 25 in this embodiment, which is composed of at least two layers. : Γ ::] 4: Households: constitute 'in this figure and the example, two layers are taken as an example' and the two lens arrays 2 4? 9 R μ $ & &######### More Α φ is complex k as the supporting layer of the upper microlens array 256. ^ 1 2 i ΪThe microlens array 242 is composed of two microlenses 242a of plano-convex type =! Ί, and the upper microlens array The 256 series is formed by an array of plano-convex microlenses 2 4 6 a. Each: pixel area 21 ° corresponds to a microlens 242 & and a plurality of microlenses ^, the upper microlens 2 56a has a relatively small The large optical quantum efficiency j mirror has a small radius of curvature and a large surface area, and its main work is: m: the luminous flux of the light. The lower microlens has a white and rate radius, and its main function is to Increase focus length so that
第12頁 0503-8260TWf ； TSMC2002-0103 ； Amy.ptd 574757 五、發明說明（9) =光可以有效地聚焦在感光元件上。藉此達到同時增加 聚焦長度和增加光通量的目的。 —上述之微透鏡242a* 25 6a的材質可為苯紛樹脂、三聚 虱胺樹脂“衰氧樹脂、4其他類似此性質者。而置於兩微 =陣列242和256之間之覆蓋層244的材質為透明的光阻 可為甲f趟丙二醇醋酸酿、乙基峻丙二醇醋酸醋、 或丙烯酸聚合物。 第三實施例：影像感測器的製造方法 第4A圖至S4D圖為剖面目’其表示影像感測器的製造 /；IL ° 百先請參照第4A圖，提供一基底2〇〇 :基底，並在基底·中形成感光元 ：2 2〇2 ’此光二極體202即為感測區。# —個光二極體二均 的電晶體，用以讀取感測區所產生的電荷資料， 再糟由一糸列的電路設計而轉換為影 線製程。 弋傻進仃内連 由於像素密度的提高，因此内連線的數量亦隨 ’傳統之單層的内連線結構已無法滿^電路設計的要^， 故必須採用多層内連線結構，以完成各元件間的 此多層内連線結構220係製作於基底2〇〇上方。在第$ 係以二層的内連線結構為例，圖中標號2 1 2係表示 回， ，系最下層的導線2 1 2為複晶矽層，其係做為閘極電極 字兀線之用，其他層的導線212則為金屬層。導線2丨° 為絕緣層214所包圍，此絕緣層214的絕緣材質例如為具二Page 12 0503-8260TWf; TSMC2002-0103; Amy.ptd 574757 V. Description of the invention (9) = Light can be effectively focused on the photosensitive element. This achieves the purpose of simultaneously increasing the focal length and increasing the luminous flux. — The material of the above-mentioned microlenses 242a * 25 6a may be benzene resin, melamine resin, “oxygen-decaying resin, 4 others with similar properties. And the covering layer 244 placed between two micro-arrays = 242 and 256 The material of the transparent photoresist may be propylene glycol acetate, ethyl propylene glycol acetate, or acrylic polymer. The third embodiment: the manufacturing method of the image sensor. Figures 4A to S4D are sectional views. It refers to the manufacture of image sensors; IL ° Please refer to Figure 4A, provide a substrate 200: substrate, and form a photoreceptor in the substrate: 2 202 'This photodiode 202 is Sensing area. # —A photodiode and two uniform transistors are used to read the charge data generated in the sensing area, and then it is converted into a shadow line process by a series of circuit designs. 弋 傻 进 仃 内 接Due to the increase in pixel density, the number of interconnects also follows the 'traditional single-layer interconnect structure that is no longer sufficient for circuit design. Therefore, a multilayer interconnect structure must be used to complete this between components. The multilayer interconnect structure 220 is fabricated over the substrate 200. In $ Refers to the two-layer interconnect structure as an example. The reference number 2 1 2 in the figure indicates the back, and the bottom wire 2 12 is a polycrystalline silicon layer, which is used as the gate electrode word line. The other layer of the conductor 212 is a metal layer. The conductor 2 is surrounded by an insulating layer 214. The insulating material of the insulating layer 214 is, for example, two layers.
574757 五、發明說明（ίο) 透性的氧化矽 此外在對應於感光區（即光二極體2 〇 2的所在位置 )上方的内連線結構2 2 0，係由多層的絕緣層2丨4堆疊而成 透明、、、巴4宜層2 2 0 a，使入射至感光區的光線可以順利穿透 其中。 接著於此多層内連線結構2 2 0的上方覆蓋一層保護 層228，此保護層228為介電層，材質可為氮化石夕（Μ) 或氮氧化矽（Si ON )。 呆護層228上形成色彩濾鏡陣列230，例如是 由R G B所構成。 接著，於色彩濾鏡陣列230上形成平坦 層232係用以支樓後續將形成之疊層微透鏡組24〇或千/一 平坦層2 3 2的材質為透明的介電材質。 — 繼績進行聚光裝置的製造流程。 声，ί#著圖，在此平坦層232上覆蓋-樹脂 曰/、車乂佳的厗度約為0 . 5微米至丨.2微米，苴 酚樹脂、三聚氰胺樹脂、璟惫抖 八柯貝了為本 廿茲山祐少制 衣^樹脂或其他類似此性質者。 亚猎由頌衫衣程將樹脂層圖案化後， ⑷。所形成之樹脂層或圖案化樹脂層=層 形成之微透鏡的曲率半徑相關，而//^的$度與後續將 々關 而在此步驟中斟祀屮々国 ::樹脂層241的厚度大小’所考量的；圖 率半徑較大的微透鏡，以具有較要口素為形成曲 ^可以順利地聚焦在感光區（即574757 V. Description of the invention (ίο) Translucent silicon oxide also has an interconnect structure 2 2 0 above the photosensitive area (ie, the location of the photodiode 2 02), which is composed of multiple insulating layers 2 丨 4 Stacked into a transparent layer of 2 0 2 0 a, so that the light incident on the photosensitive area can pass through it. Then, a protective layer 228 is covered over the multilayer interconnect structure 220. The protective layer 228 is a dielectric layer, and the material can be nitride nitride (M) or silicon oxynitride (Si ON). The color filter array 230 is formed on the dull protective layer 228, and is made of, for example, R G B. Next, a flat layer 232 is formed on the color filter array 230 to support a laminated microlens group 24 or a thousand / one flat layer 2 3 2 to be formed later. The material of the flat layer 2 3 2 is a transparent dielectric material. — Continue the manufacturing process of condensing devices.声 ， ί # Drawing, covering this flat layer 232-the resin is said to be, the degree of the car is about 0.5 micrometer to 丨 2 micrometers, the phenol resin, melamine resin, stunned eight Kebei In order to make clothes 树脂 resin, or other similar to this nature. Asian hunting patterned the resin layer by the song shirt process, and then ⑷. The formed resin layer or patterned resin layer = the curvature radius of the microlens formed by the layer is related, and the $ degree of // ^ is related to the subsequent guanguan and the thickness of the Lao country :: resin layer 241 is sacrificed in this step. Size 'is taken into consideration; microlenses with a large graph radius can be focused on the photosensitive area (ie
〇5〇3-8260TWf ; TSMC2002-0103 ； Amy.ptd 第14頁 574757〇5〇3-8260TWf; TSMC2002-0103; Amy.ptd Page 14 574757
」妾著請參照第4C圖，進行熱處理， 241元全融化’利用其本身的表面張力固案化树 '層 之微透鏡陣列242，每一個光—彳_ 形成如圖所不 9/19 彳U无一極體2 0 2均對靡 旅1外·讀倍 2,。此微透鏡242a因為設置在表面巧：= 透鏡 方，因此所形成的微透鏡242a係為平凸微透：：層232上 接著請參照第4D圖，於彳畔读#綠巧丨〇 /。 光性姑併日瓦卫i * 於铽透鏡陣列242上方覆蓋一透 苗二〜 的覆蓋層244，此透光性材質的覆 孤曰244係用以支撐後續將形成之微透鏡陣 2”的材質可為甲基喊丙二醇醋酸醋、乙基峻丙二醇。 §曰、或丙烯酸聚合物。 繼續進行上層的微透鏡陣列之製程。 睛同時參照第5圖和第6圖，在此覆蓋層2 4 4上覆蓋一 樹脂層，其材質可為苯酚樹脂、三聚氰胺樹脂、環氧樹脂 或其他類似此性質者。並藉由顯影製程將樹脂層圖案化後 ’成為圖案化樹脂層2 4 5 (如第5圖所示）或圖案化樹脂層 2 5 5 (如第6圖所示）。所形成之樹脂層或圖案化樹脂層 245或255的厚度和每一島狀圖案的面積與後續將形成之微 透鏡的曲率半徑相關，而在此步驟中對形成之圖案化樹脂 層245或255的厚度大小，所考量的主要因素為形成曲率半 徑較小的微透鏡，以具有較大的光通量。 此外，若是形成如第5圖所示之圖案化樹脂層2 4 5，則 每一像素區2 1 〇係對應一個島狀圖案，且在進行曝光製程 時，可使用與定義圖案化樹脂層24 1相同的光罩。因此， 在此情況下，並不需要使用額外的光罩。妾 Please refer to Figure 4C for heat treatment. The 241 yuan fully melts the microlens array 242 of the 'solidified tree' layer with its own surface tension. Each light— 彳 _ forms as shown in Figure 9/19 彳U without a polar body 2 0 2 reads 2 times outside Mi Lu 1. Because the microlens 242a is disposed on the surface: = lens side, the microlens 242a formed is a plano-convex micro-transmission :: layer 232. Then please refer to FIG. 4D, and read # 绿 巧 丨 〇 / on the edge. The optically integrated Riwawei i * is covered with a cover layer 244 over the lens array 242. The cover material 244 of this transparent material is used to support the microlens array 2 to be formed later ". The material can be methyl propylene glycol acetate, ethyl propylene glycol, or acrylic polymer. Continue the process of the upper microlens array. Refer to Figure 5 and Figure 6 at the same time, and cover the layer 2 4 4 is covered with a resin layer, the material of which can be phenol resin, melamine resin, epoxy resin or other similar to this nature. And the resin layer is patterned by the development process to become a patterned resin layer 2 4 5 (such as the first (Shown in Figure 5) or patterned resin layer 2 5 5 (shown in Figure 6). The thickness of the formed resin layer or patterned resin layer 245 or 255 and the area of each island-like pattern are as follows The curvature radius of the microlenses is related, and the thickness of the patterned resin layer 245 or 255 formed in this step is mainly considered to form a microlens with a smaller curvature radius to have a larger luminous flux. In addition, If it is formed as in Section 5 As shown in the patterned resin layer 2 4 5, each pixel region 2 1 0 corresponds to an island-like pattern, and in the exposure process, the same mask as that used to define the patterned resin layer 24 1 can be used. Therefore, In this case, no additional photomask is required.
574757 五、發明說明（12) 再者，若是形成如第6圖所示之圖案化樹脂層2 5 5，則 每一像素區2 1 0係對應多個島狀圖案。在此情況下，圖案 化樹脂層2 5 5所需的厚度較第5圖所示之圖案化樹脂層2 4 5 的厚度為薄。 接著進行熱處理，以將圖案化樹脂層2 4 5或2 5 5完全融 化’利用其本身的表面張力，以分別形成如第2圖或第3圖 所示之微透鏡陣列2 4 6或2 5 6。在第2圖中，每一個光二極 體202均對應一個上層微透鏡246a。在第3圖中，每一個光 一極體2 0 2均對應多個上層微透鏡2 5 6a。此微透鏡246 &或 2 5 6a因為設置在表面平坦的覆蓋層244上方，因此所形成 的微透鏡246a或25 6a係為平凸微透鏡。 【發明之特徵與效果】 标上所述 不叙月至y具α Γ π」，度；5我符徵^ ： •本發明藉由於色彩濾鏡陣列上方設置疊 二組同時具有可增加入射光的； ::長度的功此’使入射光可以有效地聚焦在感光元件 2·本發明的聚光裝置為疊層微透鏡组，苴 陣列所構成，上層的微透 微：二=兩 =曲率半徑，可以增加入射光的光通m二有較 焦長度。 增加入射光的聚 3·本發明的聚光裝置係574757 V. Description of the invention (12) Furthermore, if the patterned resin layer 2 5 5 shown in FIG. 6 is formed, each pixel region 2 1 0 corresponds to a plurality of island-like patterns. In this case, the required thickness of the patterned resin layer 2 5 5 is thinner than the thickness of the patterned resin layer 2 4 5 shown in FIG. 5. Then heat treatment is performed to completely melt the patterned resin layer 2 4 5 or 2 5 5 'using its own surface tension to form the microlens array 2 4 6 or 2 5 as shown in FIG. 2 or 3, respectively. 6. In Fig. 2, each photodiode 202 corresponds to an upper microlens 246a. In Fig. 3, each photopolar body 2 02 corresponds to a plurality of upper microlenses 2 5 6a. Since this microlens 246 & 2a or 2 5a is disposed above the cover layer 244 having a flat surface, the formed microlens 246a or 25 6a is a plano-convex microlens. [Characteristics and effects of the invention] The above-mentioned month is not marked to y with α Γ π ″, degree; 5 I sign ^: • The present invention can increase incident light by providing two sets of stacked filters above the color filter array The work of :: length allows the incident light to be effectively focused on the photosensitive element 2. The light-concentrating device of the present invention is composed of a stacked microlens group and a chirped array, and the micro-permeability of the upper layer: two = two = curvature The radius can increase the focal length of the incident light flux m. Condensation for increasing incident light 3. The light concentrating device system of the present invention
0503-8260TWf ； TSMC2002-0103 ； Amy. Ptd 第16頁 成的疊層微透鏡組，對下展n 1兩層U透鏡陣列所構 凡、、且，對下層微透鏡陣列而古，— 1傅 口 母一像素 574757 五、發明說明（13) 均對應一個微透鏡；對上層微透鏡陣列而言，每一像素區 均對應至少一個微透鏡。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限制本發明，任何熟習此項技藝者，在不脫離本發明之精 神和範圍内，當可做更動與潤飾，因此本發明之保護範圍 當事後附之申請專利範圍所界定者為準。0503-8260TWf; TSMC2002-0103; Amy. Ptd page 16 of the stacked micro lens group, for the downward n 1 two-layer U lens array, and, for the lower micro lens array, and ancient, -1 Mouth one pixel 574757 V. Description of the invention (13) All correspond to one microlens; for the upper microlens array, each pixel area corresponds to at least one microlens. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make changes and retouching without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the patent application.
0503-8260TWf ； TSMC2002-0103 ； Amy.ptd 第17頁 574757 圖式簡單說明 為讓本發明之上述目的、特徵及優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 第1 A圖係繪示傳統之影像感測器的剖面圖。 第1 B圖係繪示傳統具有多層内連線結構之影像感測器 的剖面圖。 第2圖係繪示根據本發明一第一實施例之一種影像感 測器的剖面圖。 第3圖係繪示根據本發明一第二實施例之一種影像感 測器的剖面圖。 第4A圖至第4D圖係為剖面圖，其表示根據本發明一較 佳實施例之影像感測器的部份製造流程。 第5圖係表示於第4D圖中的覆蓋層上方形成一種圖案 化樹脂層之示意圖。 第6圖係表示於第4D圖中的覆蓋層上方形成另一種圖 案化樹脂層之示意圖。 【符號說明】 發明背景 半導體矽基底〜1 0 0 光二極體〜1 〇 2 像素區〜1 1 0 導線〜112 氧化矽層〜1 1 4 保護層〜1 2 80503-8260TWf; TSMC2002-0103; Amy.ptd page 17 574757 The diagram is briefly explained in order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable. The following exemplifies a preferred embodiment in conjunction with the accompanying drawings The detailed description is as follows: FIG. 1A is a cross-sectional view showing a conventional image sensor. Figure 1B is a cross-sectional view of a conventional image sensor with a multilayer interconnect structure. FIG. 2 is a cross-sectional view of an image sensor according to a first embodiment of the present invention. FIG. 3 is a cross-sectional view of an image sensor according to a second embodiment of the present invention. 4A to 4D are cross-sectional views showing a part of a manufacturing process of an image sensor according to a preferred embodiment of the present invention. Fig. 5 is a schematic view showing the formation of a patterned resin layer on the cover layer in Fig. 4D. Fig. 6 is a schematic view showing another patterned resin layer formed on the cover layer in Fig. 4D. [Symbol description] Background of the invention Semiconductor silicon substrate ~ 1 0 0 photodiode ~ 1 〇2 pixel area ~ 1 1 0 wire ~ 112 silicon oxide layer ~ 1 1 4 protective layer ~ 1 2 8
0503-8260TWf ； TSMC2002-0103 ； Amy.ptd 第18頁 574757 圖式簡單說明 色彩濾鏡陣列〜1 3 0 氧化矽層〜1 2 8 微透鏡〜1 4 2 a 微透鏡陣列〜1 4 2 發明詳細說明 基底〜200 感光元件〜2 0 2 像素區〜2 1 0 色彩濾鏡陣列〜2 3 0 疊層微透鏡組〜240、250 内連線結構〜2 2 0 透明絕緣疊層〜2 2 0 a 導線〜212 絕緣層〜2 1 4 保護層〜2 2 8 平坦層〜2 3 2 覆蓋層〜2 4 4 微透鏡陣列〜2 4 2、2 4 6、2 5 6 微透鏡〜242a、246a、2 5 6a 圖案化樹脂層〜2 4 1、2 4 5、2 5 50503-8260TWf; TSMC2002-0103; Amy.ptd page 18 574757 The diagram briefly explains the color filter array ~ 1 3 0 silicon oxide layer ~ 1 2 8 micro lens ~ 1 4 2 a micro lens array ~ 1 4 2 Detailed invention Description substrate ~ 200 Photosensitive element ~ 2 0 2 Pixel area ~ 2 1 0 Color filter array ~ 2 3 0 Laminated micro lens group ~ 240,250 Interconnect structure ~ 2 2 0 Transparent insulation laminated ~ 2 2 0 a Conductor ~ 212 Insulation layer ~ 2 1 4 Protective layer ~ 2 2 8 Flat layer ~ 2 3 2 Cover layer ~ 2 4 4 Micro lens array ~ 2 4 2, 2 4 6, 2 5 6 Micro lens ~ 242a, 246a, 2 5 6a Patterned resin layer ~ 2 4 1, 2, 4 5, 2 5 5
0503-8260TWf ； TSMC2002-0103 ； Amy.ptd 第19頁0503-8260TWf; TSMC2002-0103; Amy.ptd page 19
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