TW570994B - ITO sputtering target - Google Patents

ITO sputtering target Download PDF

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Publication number
TW570994B
TW570994B TW091106365A TW91106365A TW570994B TW 570994 B TW570994 B TW 570994B TW 091106365 A TW091106365 A TW 091106365A TW 91106365 A TW91106365 A TW 91106365A TW 570994 B TW570994 B TW 570994B
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Taiwan
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target
corroded
corrosive
patent application
sputtering target
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TW091106365A
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Chinese (zh)
Inventor
Kentaro Uchiumi
Satoshi Kurosawa
Hirokuni Hoshino
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Tosoh Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

To provide an ITO (indium-tin-oxide) target which reduces the amount of particles caused by nodules generated on an erosion part in accordance with the increase of the cumulative use time of the target and the amount of particles caused by yellow powders deposited on a non-erosion part. In the ITO sputtering target substantially consisting of indium, tin and oxygen, the non erosion part is made thinner than the erosion part to project the erosion part. Further, a shape obtained by connecting the plane including the erosion part and the plane including the non-erosion part by an obtuse-angled slant is formed. The surface roughness (Ra) of the erosion part is controlled to less than or equal to 0.1 mum, and the Ra of the non-erosion part and slant part obtained by connecting the erosion part and the non-erosion part is controlled to less than or equal to 1.0 mum.

Description

570994 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(1 ) 【發明領域】 本發明係關於透明導電性薄膜製造時所使用的I 丁〇 濺鍍標靶。 【發明背景】 【習知技藝之說明】 透明導電膜之I τ〇(銦錫氧化物,Indium Tin Oxide )薄膜的製造方法可大致區別爲噴霧(Spray) -熱分解法 、C V D法等的化學成膜法與電子束蒸鍍(Evaporation ) 法、濺鍍(Sputtering )法等的物理的成膜法。其中因使用 I 丁〇標靶(Target )的濺鍍法其大面積化容易,所得到的 膜的電阻値以及透過率的經時變化少,而且,成膜條件的 控制容易,故在各種領域被使用。 特別是在濺鍍標靶的背後配置磁石,藉由在標靶表面 使磁場存在,以使電漿(Plasma)收斂的磁控直流濺鍍法( Magnetron DC Sputtering)因具有製膜速度高的特徵,故在 量產裝置常被採用。 這種I T ◦薄膜因具有高導電性、高透過率的特徵, 再者微細加工也容易被進行,故遍及平面面板顯示器(Flat panel display)用顯示電極、太陽電池用窗材、帶電防止膜 等的廣範圍領域被使用。特別是在以液晶顯示裝置爲首的 平面面板顯示器領域,近年來大型化以及高精細化進行, 對其顯不用電極之I 丁〇薄膜,低微粒(Particle )化的要 求升高。 (請先閲讀背面之注意事項再填寫本頁)570994 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (1) [Field of the Invention] The present invention relates to I-but sputtering targets used in the manufacture of transparent conductive films. [Background of the Invention] [Explanation of Known Techniques] The manufacturing method of I τ〇 (Indium Tin Oxide) thin film of transparent conductive film can be roughly distinguished as spray-thermal decomposition method, CVD method, etc. Physical film formation methods such as a film formation method, an electron beam evaporation (Evaporation) method, and a sputtering (Sputtering) method. Among them, the sputtering method using the I but target is easy to increase the area, and the resistance 値 and transmittance of the obtained film are less changed with time, and the film formation conditions are easily controlled, so it is used in various fields. used. In particular, a magnetron DC sputtering method in which a magnet is arranged behind a sputtering target and a magnetic field is present on the surface of the target to converge plasma (Plasma) has a feature of high film forming speed. Therefore, it is often used in mass production devices. This type of IT ◦ Thin films are characterized by high conductivity and high transmittance, and can be easily processed by microfabrication. Therefore, they are widely used in display electrodes for flat panel displays, window materials for solar cells, and antistatic films. A wide range of fields are used. In particular, in the field of flat panel displays including liquid crystal display devices, in recent years, large-scale and high-definition processes have been performed, and the requirements for I-thin films and electrode-reduction of low-particles have increased. (Please read the notes on the back before filling this page)

訂 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -4 - 570994 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(2 ) 微粒的產生原因可舉出在腐蝕部所形成的球粒(Nodule )起因者與起因於沉積於標靶的非腐蝕部分的黃色粉末者 〇 球粒係指在氬氣與氧氣的混合氣體環境中連續濺鍍 I T〇標靶的情形,累計濺鍍時間的增加並且在標靶表面 所產生的黑色附著物。被考慮是銦的低級氧化物的此黑色 的附著物因析出於標靶的腐鈾部,故容易成爲濺鍍時的異 常放電的原因,而且,已知其自身也成爲異物(微粒)的 發生源。 另一方面,沉積於標靶表面的非腐蝕部的黃色粉末伴 隨著濺鍍時間的增加沉積量也增加,若達某種程度以上的 厚度的話,會由標靶表面剝落,浮游於真空中而附著於基 板表面。此黃色粉末可考慮爲在被腐蝕部趕出的標靶物質 到達所面對的基板前,藉由與真空反應室(Chamber )內的 氣體粒子(氬、氧等)碰撞而改變方向,沉積於標靶表面 的非腐蝕部。若此黃色粉末附著於基板的話,會降低液晶 顯示裝置等的顯示品味,造成不良的原因,會顯著地降低 製品的製造良率。 降低球粒起因的微粒之手段例如在日本特開平0 5 -1 4 8 6 3 5號公報報告有將標靶的密度與體(Bulk )電 阻率收斂於一定範圍內,並且令被濺鍍的面的表面粗糙度 (R a )爲〇 · 5 // m以下的方法。但是,這些方法對於 有球粒起因的微粒降低的效果之黃色粉末起因的微粒降低 無效。 (請先閱讀背面之注意事項再填寫本頁)The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) -4-570994 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (2) The reasons for the generation of particles can be cited in corrosion The origin of the Nodule and the yellow powder caused by the non-corrosive part deposited on the target. The spheroid refers to the case of continuous sputtering of IT target in a mixed gas environment of argon and oxygen. , The increase in cumulative sputtering time and the black attachments on the target surface. This black deposit, which is considered to be a low-level oxide of indium, is likely to cause abnormal discharge during sputtering because it precipitates on the uranium rot part of the target. In addition, it is known that it also becomes a foreign matter (particle). source. On the other hand, the yellow powder deposited on the non-corrosive part of the target surface increases with the increase of the sputtering time. If it reaches a certain thickness or more, it will peel off from the target surface and float in a vacuum. Attach to the substrate surface. This yellow powder can be considered to be deposited on the target by changing the direction by colliding with the gas particles (argon, oxygen, etc.) in the vacuum reaction chamber (Chamber) before the target substance driven out by the corroded part reaches the substrate facing it. Non-corrosive part of the target surface. If this yellow powder adheres to a substrate, display taste of a liquid crystal display device and the like is reduced, causing a cause of failure, and a manufacturing yield of a product is significantly reduced. Means for reducing particles caused by spherules are disclosed in, for example, Japanese Unexamined Patent Publication No. 0 5 -1 4 8 6 35. It is reported that the target density and bulk resistivity are converged within a certain range, and sputtered A method in which the surface roughness (R a) of a surface is 0.5 5 // m or less. However, these methods are not effective for the reduction of particles due to yellow powder, which has the effect of reducing particles due to pellets. (Please read the notes on the back before filling this page)

、1T 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) -5- 570994 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明(3) 另一方面,降低黃色粉末起因的微粒之手段例如如曰 本實開昭6 0 - 1 9 3 3 6 4號公報報告有使標靶表面粗 糙,以提高黃色粉末的附著強度的方法。但是,這種情形 對於有黃色粉末起因的微粒降低的效果之球粒起因的微粒 無效。 由上述,如同時可降低以球粒與黃色粉末的雙方爲起 因的微粒之新穎的I T〇標靶的開發被期待。 【發明槪要】 本發明的課題係提供降低伴隨著標靶的累計使用時間 的增加,在腐蝕部所產生的球粒起因的微粒以及沉積於非 腐蝕部的黃色粉末起因的微粒的產生量之I T〇濺鍍標靶 〇 本發明者們根據前述公知技術,實施對平行平板狀的 標靶使非腐蝕部的表面粗糙度粗糙,並且降低腐蝕部的表 面粗糙度,調查球粒的產生狀況以及黃色粉末的附著力的 實驗。但是,無法再現性良好地降低球粒產生量,並且增 加黃色粉末的附著力。 其原因係根據如以下所示的理由。(1 )、很難特定 標靶表面的腐蝕區域。(2 )、即使是相同設計的陰極, 因置放於其下的磁石的微妙的磁力的不同,使腐鈾部微妙 地不同。(3 )、在腐鈾部即使是微小的寬度,若形成表 面粗糙度粗的區域的話,該部分會產生許多球粒。因此, 即使是相同尺寸的標靶,每一陰極都需分區而設計以控制 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)、 1T This paper size applies Chinese National Standard (CNS) A4 specification (210 × 297 mm) -5- 570994 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) On the other hand, reduce the cause of yellow powder As a method of fine particles, for example, Japanese Unexamined Patent Publication No. 60-1 9 3 3 64 has reported a method of roughening the surface of a target to improve the adhesion strength of a yellow powder. However, this case is not effective for pellets of pellet origin which have the effect of reducing particles of yellow origin. From the foregoing, the development of a novel I T0 target that can reduce both particles caused by both pellets and yellow powder is expected. [Summary of the Invention] The object of the present invention is to reduce the amount of particles generated by the spherules generated in the corroded part and the particles generated by the yellow powder deposited in the non-corroded part with the increase of the cumulative use time of the target. IT〇 Sputtering target 0 According to the aforementioned known technology, the inventors implemented a parallel flat target to roughen the surface roughness of the non-corroded portion, reduce the surface roughness of the corroded portion, and investigated the occurrence of pellets and Experiment of adhesion of yellow powder. However, it was not possible to reduce the amount of pellet generation with good reproducibility and increase the adhesion of the yellow powder. The reason is as follows. (1) It is difficult to specify the corrosion area on the target surface. (2) Even the cathodes of the same design have subtle differences in the uranium decay parts due to the different subtle magnetic forces of the magnets placed under them. (3) Even if the uranium decay part has a small width, if a rough surface area is formed, a lot of pellets will be generated in this part. Therefore, even for targets of the same size, each cathode needs to be partitioned and designed to control. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

-訂 570994 經濟部智慧財產局員工消費合作社印製 A7 _B7_五、發明説明(4) 表面粗糙度,無法成爲工業上可使用的技術。 因此,本發明者們對於標靶的形狀與表面粗糙度進行 各種檢討,使用工業上可生產的手法,關於可再現性良好 地降低球粒產生量,並且增加黃色粉末的附著力的方法, 進行了銳意的檢討。 其結果發現:藉由令非腐鈾部的厚度比腐蝕部的厚度 薄,以使腐蝕部突出,並且爲以鈍角的斜面連接包含該腐 蝕部的平面與包含該非腐蝕部的平面之形狀,令該突出的 腐蝕部的表面粗糙度(R a )爲0 · 1 // m以下,並且令 連接非腐蝕部以及腐蝕部與非腐蝕部的斜面的表面粗糙度 (R a )爲1 · 〇 // m以上,可降低球粒以及黃色粉末起 因的微粒,而完成本發明。 即本發明係關於一種I T〇濺鍍標靶,實質上係使用 由銦、錫以及氧所構成的燒結體,其特徵爲:令非腐鈾部 的厚度比腐蝕部的厚度薄,以使腐蝕部突出,並且爲以鈍 角的斜面連接包含該腐蝕部的平面與包含該非腐鈾部的平 面之形狀,令該突出的腐蝕部的表面粗糙度(R a )爲 〇.1 // m以下,令連接非腐蝕部以及腐蝕部與非腐蝕部 的斜面的表面粗糙度(R a )爲1 · 0 // m以上。 【圖式之簡單說明】 圖1係顯示本發明的I T ◦濺鍍標靶的外觀的圖。 圖2係顯示本發明的I T ◦濺鍍標靶的剖面形狀的一 例的圖。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -7 - (請先閲讀背面之注意事項再填寫本頁)-Order 570994 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of the invention (4) The surface roughness cannot be used in industry. Therefore, the present inventors conducted various reviews on the shape and surface roughness of the target, and used industrially-producible methods to improve the reproducibility of reducing the amount of pellet generation and increasing the adhesion of the yellow powder. An ardent review. As a result, it was found that by making the thickness of the non-corrosive uranium portion thinner than the thickness of the corroded portion so that the corroded portion protrudes, and connecting the plane containing the corroded portion and the plane containing the non-corroded portion at an obtuse angle, the The surface roughness (R a) of the protruding corroded portion is 0 · 1 // m or less, and the surface roughness (R a) of the inclined surface connecting the non-corroded portion and the corroded portion and the non-corroded portion is 1 · 〇 / / m or more, it is possible to reduce pellets and particles caused by yellow powder, and complete the present invention. That is, the present invention relates to an IT0 sputtering target, which essentially uses a sintered body composed of indium, tin, and oxygen, and is characterized in that the thickness of the non-corrosive uranium portion is made thinner than the thickness of the corroded portion to make corrosion The protruding portion is a shape that connects a plane including the corroded portion and a plane including the non-corrosive uranium portion at an obtuse angle, so that the surface roughness (R a) of the protruding corroded portion is less than 0.1 // m, The surface roughness (R a) of the inclined surface connecting the non-corrosive portion and the corroded portion and the non-corrosive portion is 1 · 0 // m or more. [Brief description of the drawings] FIG. 1 is a diagram showing the appearance of the I T ◦ sputtering target of the present invention. Fig. 2 is a diagram showing an example of a cross-sectional shape of an I T ◦ sputtering target according to the present invention. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -7-(Please read the precautions on the back before filling this page)

570994 A7 B7 五、發明説明(5 ) 圖3係顯示本發明的I τ〇濺鍍標靶的剖面形狀的一 例的圖。 (請先閱讀背面之注意事項再填寫本頁) 圖4係顯示本發明的I τ ◦濺鍍標靶的剖面形狀的一 例的圖。 圖5係顯示本發明的I τ〇濺鍍標靶的剖面形狀的一 例的圖。 【較佳實施例之詳細說明】 以下詳細說明本發明。 本發明所使用的I T 0燒結體雖然未特別限定,惟例 如可藉由如以下的方法來製造。 原料粉末可使用由氧化銦粉末與氧化錫粉末的混合粉 末或共沉法等所得到的I τ ◦粉末。若所使用的粉末的平 均粒徑大的話,因有燒結後的密度不充分地上升的情形, 故爲了獲得燒結密度更高的燒結體,所使用的粉末的平均 粒徑爲1 . 5 // m以下較佳,更佳爲〇 . 1〜1 . 5 // m 以下。 經濟部智慧財產局員工消費合作社印製 而且,混合粉末或I T〇粉末中的氧化錫含量以利用 濺鍍法製造薄膜時電阻率降低的5〜2 5重量% (氧化物 換算)較佳。 對於原料粉末使用氧化銦粉末以及氧化錫粉末的情形 ,最初進行粉末的混合。粉末的混合例如使用球磨機(Ball null)等,若進行濕式或乾式混合的話佳。 利用沖壓(Press )法或鑄入法等的成形法成形藉此所 -8- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 570994 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(6 ) 得到的粉末以製造I T 0成形體。當利用沖壓法製造成形 體時,將混合粉末塡充到預定大小的金屬模後,利用沖壓 機以1 0 0〜5 0 0 k g / c m 3的壓力進行沖壓作爲成形 體。此時,依照需要添加P V A等的黏結劑(Binde r )也 可以。 另一方面當利用鑄入法製造成形體時,將原料粉末、 水、黏結劑以及分散劑一起混合而泥漿(Slurry )化,將具 有藉此所得到的5 0〜5 0 〇 〇百分泊(p〇ise )的黏度之 泥漿注入所希望的具有吸水性的多孔質成形鑄模以製作成 形體。 本發明的標靶的外觀顯示於圖1 ,顯示對此外觀以包 含A - A的平面對圖不的標肥垂直地切斷時的剖面形狀於 圖2。本發明的標靶的剖面形狀除了顯示於圖2外,即使 以除去圖3〜5所示的中心部的燒結體的環狀標靶,本發 明仍有效。而且,對接合於一片底板(Backing plate )的燒 結體由一片構成者,以及將複數個燒結體接合於一片底板 的多分割標靶的雙方有效。 成形方法若使用鑄入法的話可製作成形體於所希望的 形狀,之後因無須加工製程故較佳。 其次,藉此所得到的成形體依照需要進行藉由冷間等 方壓沖壓(C I P )的處理。此時,C I P的壓力爲了獲 得充分的壓密效果,1 t ο n / c m 2以上,較佳爲2〜5 t ο n / c m 2 〇 當以沖壓法進行成形時,此處加工成所希望的形狀。 (請先閱讀背面之注意事項再填寫本頁)570994 A7 B7 V. Description of the invention (5) FIG. 3 is a diagram showing an example of the cross-sectional shape of the I τ〇 sputtering target of the present invention. (Please read the precautions on the back before filling this page.) Figure 4 is a diagram showing an example of the cross-sectional shape of the sputtering target of the present invention. Fig. 5 is a diagram showing an example of a cross-sectional shape of an I τ〇 sputtering target according to the present invention. [Detailed description of the preferred embodiment] The present invention is described in detail below. Although the I T 0 sintered body used in the present invention is not particularly limited, it can be produced, for example, by the following method. As the raw material powder, I τ ◦ powder obtained from a mixed powder of indium oxide powder and tin oxide powder, or a co-precipitation method can be used. If the average particle size of the powder used is large, the density after sintering may not be sufficiently increased. Therefore, in order to obtain a sintered body with a higher sintered density, the average particle size of the powder used is 1.5 // It is more preferably m or less, and more preferably 0.1 to 1.5 // m or less. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The tin oxide content in the mixed powder or I TO powder is preferably 5 to 25% by weight (in terms of oxides) when the resistivity is reduced when the thin film is produced by sputtering. When indium oxide powder and tin oxide powder are used as the raw material powder, powder mixing is performed first. The powder is mixed using, for example, a ball mill (Ball null), and it is preferable to perform wet or dry mixing. It is formed by forming methods such as press method or casting method. 8- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 570994 A7 B7 Printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Preparation 5. Description of the invention (6) The obtained powder is used to manufacture IT 0 shaped body. When a formed body is manufactured by a stamping method, the mixed powder is filled into a metal mold of a predetermined size, and then the formed body is punched with a press at a pressure of 100 to 500 kg / cm3. In this case, a binder (Binde r) such as P V A may be added as necessary. On the other hand, when a molded body is manufactured by a casting method, raw material powder, water, a binder, and a dispersant are mixed together to form a slurry, and 50 to 50,000 percent poises obtained therefrom are obtained. A slurry having a viscosity of (poise) is poured into a desired porous molding mold having water absorption to produce a molded body. The external appearance of the target of the present invention is shown in FIG. 1, and the cross-sectional shape when the external appearance of the standard fertilizer cut by a plane containing A to A against the standard fertilizer shown in FIG. 2 is shown in FIG. 2. The cross-sectional shape of the target of the present invention is shown in Fig. 2, and the present invention is effective even if the ring-shaped target of the sintered body at the center portion shown in Figs. 3 to 5 is removed. Furthermore, it is effective for both a sintered body joined to one backing plate and a multi-segmented target in which a plurality of sintered bodies are joined to one backing plate. For the molding method, if the casting method is used, a molded body can be produced in a desired shape, and thereafter, a processing process is not necessary, so it is preferable. Next, the formed body thus obtained is subjected to a cold isostatic pressing (C I P) process as necessary. At this time, in order to obtain a sufficient compaction effect, the pressure of CIP is 1 t ο n / cm 2 or more, preferably 2 to 5 t ο n / cm 2 〇 When forming by the press method, the processing is performed here as desired. shape. (Please read the notes on the back before filling this page)

訂 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -9- 570994 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明説明(7 ) 雖然在燒結後也能加工,但因成形體的硬度遠低於燒結體 可容易加工,故最好在此階段加工,惟在燒結後進行也無 妨。 當利用鑄入法進行成形時,爲了除去殘存於c I P後 的成形體中的水分以及黏結劑等的有機物,以3 0 0〜 5〇0 °C的溫度實施5〜2 0小時左右的乾燥處理以及脫 黏結劑處理較佳。而且,即使藉由沖壓法進行成形,當成 形時使用黏結劑時,進行同樣的脫黏結劑處理較佳。 其次,進行如此所獲得的成形體的燒成。對於升溫速 度雖然未特別限定,惟由燒結時間的縮短與破裂防止的觀 點,以1 0〜4 0 0 °C /小時較佳。 燒結溫度爲1 4 5 0 °C以上1 6 5 0 t:未滿,較佳爲 1 5 0 0〜1 6 0 0 t。據此,可得到高密度的燒結體。 對於燒結時間爲了獲得充分的密度上升效果以5小時 以上,較佳爲5〜3 0小時。 燒結時的環境爲氧氣流中,令於燒結時將氧導入爐內 時的氧流量(L / m i η )與成形體裝入量(k g )的比 (裝入重量/氧流量)爲1 · 〇以下。據此,容易獲得高 密度的燒結體。 因燒結密度越高越容易獲得球粒降低效果,故 9 9 · 0 %以上較佳。更佳爲9 9 · 5 %以上,特佳爲 9 9 · 7 %以上。 此外,本發明所謂的相對密度(D )係顯示對由 I η 2〇3以及S η〇2的真密度的相加平均所求出的理論 (請先閲讀背面之注意事項再填寫本頁)The paper size of the edition applies to the Chinese National Standard (CNS) A4 (210X297 mm) -9- 570994 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (7) Although it can be processed after sintering, Since the hardness of the formed body is much lower than that of the sintered body and can be easily processed, it is preferable to process it at this stage, but it may be performed after sintering. When molding is performed by the casting method, in order to remove moisture and organic substances such as binders remaining in the molded body after c IP, drying is performed at a temperature of 300 to 5000 ° C for about 5 to 20 hours. Treatment and debonding treatment are preferred. Furthermore, even if the molding is performed by a stamping method, when a binder is used for the molding, it is preferable to perform the same debonding treatment. Next, firing of the obtained molded body is performed. Although the heating rate is not particularly limited, the viewpoint of shortening the sintering time and preventing cracking is preferably 10 to 400 ° C / hour. The sintering temperature is not less than 145 0 ° C but not more than 650 t: less than 1500, preferably 1500 to 1600 t. Accordingly, a sintered body having a high density can be obtained. The sintering time is preferably 5 hours or more in order to obtain a sufficient density increase effect, and preferably 5 to 30 hours. The environment during sintering is in an oxygen flow, so that the ratio of the oxygen flow rate (L / mi η) when the oxygen is introduced into the furnace during the sintering to the amount of the molded body (kg) (loading weight / oxygen flow rate) is 1 · 〇 or less. This makes it easy to obtain a high-density sintered body. The higher the sintering density, the easier it is to obtain a pellet reduction effect, so 9 9 · 0% or more is preferred. More preferably, it is more than 99.5%, and particularly preferably it is more than 99.7%. In addition, the so-called relative density (D) of the present invention shows the theory obtained by adding the average of the true densities of I η 2 03 and S η 02 (please read the precautions on the back before filling this page)

、1Τ 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) -10- 570994 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(8 ) 密度(d )的相對値。由相加平均所求出的理論密度(d )係在燒結體組中,當令I η 2〇3以及S η〇2粉末的混 合量(g)分別爲a、b時,Ιη2〇3以及Sn〇2的真 密度使用 7 . 18、6 · 95 (g/cm3),由 d= (a +b)/((a/7·18)+(b/6.95))求出 。而且,若令燒結體的測定密度爲d 1的話,其相對密度 D (%)係由式 D = (dl/d) xlOO 求得。 其次,對I T ◦燒結體的濺鍍面(腐蝕部以及非腐蝕 部)進行噴出(Blast )處理。具體的方法例如藉由對被處 理面噴射包含噴出材的空氣等的氣體或水等的液體,藉由 以高速使噴出材碰撞被處理面來進行。 噴出材(噴出處理所使用的粉末)可使用氧化鋁( A1 u m i n a )、玻璃、氧化銷(Z i r c ο n i a ) 、S i C等,惟形成 氧化銷的各個粒子爲球狀的球狀氧化銷粉末不易被被噴出 處理的標靶表面(被處理面)污染,故特佳。 噴出材的形狀可使用針狀、粒狀、球狀等,其粒徑爲 1〇〜5〇0//m較佳,特佳爲1 〇〜2〇〇//m。 爲了使噴出材碰撞標靶表面,施加於當作介質( Medium )使用的空氣等的流體的壓力(噴出壓力)爲1〜 1 0 k g / c m 2較佳,特佳爲2〜7 k g / c m 2更佳爲 3〜5 k g / c m 2。若此壓力過高的話,有帶給標靶表面 的衝擊強,造成破裂的原因或需要大容量的壓縮機造成成 本升高。 噴出噴出材的噴嘴與標靶表面的距離爲5 〇〜3 0 0 (請先閲讀背面之注意事項再填寫本頁) -裝· 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -11 - 570994 A 7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(9 ) m m左右較佳。當此距離過近時’被實施噴出處理的有效 面積變小,不是很有效。相反地若此距離過大的話變成壓 力不足,對於噴出處理需要長時間。 標靶表面的噴出處理時間係與噴出壓力 '噴出材的種 類等有關,惟以0 · 0 5〜1 · 0秒/ c m 2來處理較佳。 據此,I T〇燒結體的濺鍍面全體的R a爲1 . 0 // m以 上、Ry爲8 · 〇Am以上。 其次,利用平面磨削盤等對突出的腐蝕部加工,使表 面粗糙度降低。最初使用# 1 2 0左右的磨石進行一次磨 削後,使用# 4 0 0左右的磨石進行二次磨削,接著使用 # 8 0 0左右的磨石硏磨。據此,可使突出的腐蝕部加工 的R a爲0 . 1 // m以下。以此也能獲得充分的本發明的 效果,惟更進一步使用粒度號細的磨石加工,或使用鋁製 的硏漿加工等,使R y爲1 . 0 // m以下更佳。 藉由令標靶形狀爲使腐蝕部突出的形狀,在工業上可 製造不受磁石的細小配置的偏移或強度影響,球粒的產生 被抑制,並且黃色粉末的附著力被強化的I T〇標靶,即 可抑制球粒起因以及黃色粉末起因的微粒雙方的基板的附 著之I T〇標靶。 此外,本發明所謂的R a以及R y的定義以及測定方 法係依照J I S B 〇 6 0 1 — 1 9 9 4所記載的。 在由無氧銅等所構成的底板上使用銦銲錫等接合藉此 所得到的I T〇燒結體,可容易標靶化。 當濺鍍時,濺鍍氣體對氬等的惰性氣體等依照需要加 (請先閲讀背面之注意事項再填寫本頁) -裝· 、?! 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -12- 570994 A7 B7 五、發明説明(10) (請先閱讀背面之注意事項再填寫本頁) 入氧氣等,通常控制這些氣壓於2〜1 OmTo r r來進 行。用以濺鍍的功率施加方式可使用D C、R F或組合這 些D C、R F者。 而且,依照本發明的濺鍍標靶,以具備附加功能者爲 目的對I T〇添加第三元素的標靶也有效。第三元素例如 可舉例說明Mg、Al 、Si 、Ti 、Zn、Ga、Ge 、Y、Zr 、Nb、Hl 、Ta等。這些元素的添加量雖 然未別限定,惟爲了不使I 丁 ◦的優良的光電特性劣化起 見,以(第三元素的氧化物的總合)/ ( I T〇+第三元 素的氧化物的總合)/ 1 0 0 ,超過0 %,2 0 %以下( 重量比)較佳。 〔實施例〕 以下藉由實施例更詳細地說明本發明,惟本發明並非 限定於這些實施例。 (實施例1) 經濟部智慧財產局員工消費合作社印製 將平均粒徑1 . 3 // m的氧化銦粉末9 0 0 g與平均 粒徑0 . 7 // m的氧化錫粉末1 〇 〇 g放入聚乙烯製的罐 ,利用乾式球磨機混合7 2小時,製造混合粉末。測定前 述混合粉末的出渣(T a p )密度爲2 · 0 g / c m 3。 其次,添加分散劑、黏結劑以及離子交換水於上述混 合粉末,球磨機混合以製作鑄入用泥漿。接著,添加消泡 劑於此泥漿,在真空中實施脫泡處理。 -13- 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇X297公釐) 570994 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明(11) 以流入可形成圖4所示的形狀之鑄模,對此進行鑄入 成形,得到I T〇成形體。以乾燥後3 t ο n / c m 2的壓 力對此成形體實施C I P處理。然後,爲了除去存在於成 形體中的分散劑以及黏結劑’設置前述成形體於大氣燒成 爐內,由以下的條件實施脫蠘處理。 (脫蠛條件) 脫蠟溫度:4 5 °C,升溫速度:5 t: / H r ,保持時 間:無 其次,設置脫蠟後的成形體於純氧環境燒結爐內,由 以下的條件進行燒結。 (燒結條件) 燒結溫度:1 5 0 0 °C,升溫速度:2 5 °C / H r , 燒結時間:1 0小時,環境:由升溫時8 0 0 °C到降溫時 4 0 0°C,以(裝入重量/氧流量)二〇 . 8將純氧氣導 入爐內。 所得到的燒結體大小爲1 0 1 . 6 X 1 7 7 . 8 m m ,腐蝕部的厚度8 m m、非腐蝕部的厚度6 m m。根據 J I S R 1 6 3 4 — 1 9 9 8利用阿基米德法測定此燒 結體的密度。顯示結果於表1。 其次,噴出處理成爲此燒結體的濺鍍面的面的表面。 噴出壓力爲4 k g / c m 2,噴嘴與標靶表面的距離爲 1 5 Q m m,噴出材係使用粒徑爲2 5〜1 0 6 " m的範 圍(平均粒徑5 3 // m )的球狀氧化锆珠(Bead ),噴出 本紙張尺度適财關家標準(CNS ) A4規格(21GX297公釐) 心 *- (請先閲讀背面之注意事項再填寫本頁)1T This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -10- 570994 A7 B7 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of invention (8) Relative density of density (d) The theoretical density (d) obtained from the addition average is in the sintered body group. When the mixing amounts (g) of I η 2 03 and S η 02 powders are a and b, respectively, η 2 03 and Sn The true density of 〇2 was determined from d = (a + b) / ((a / 7 · 18) + (b / 6.95)) using 7.18, 6.95 (g / cm3). When the measured density of the sintered body is d 1, the relative density D (%) is obtained from the formula D = (dl / d) x 100. Next, the sputtering surface (corrosive part and non-corrosive part) of the I T ◦ sintered body is subjected to a blasting process. A specific method is performed by, for example, spraying a gas such as air or water containing the ejected material on the surface to be treated, or a liquid such as water, and causing the ejected material to collide with the surface to be treated at a high speed. For the ejection material (the powder used for the ejection treatment), alumina (A1 umina), glass, oxidation pin (Zirc ο nia), S i C, etc. can be used, but each particle forming the oxidation pin is a spherical spherical oxidation pin. The powder is not easy to be contaminated by the target surface (surface to be treated) that is ejected, so it is particularly good. The shape of the ejection material can be needle-like, granular, spherical, or the like, and the particle diameter thereof is preferably from 10 to 5000 / m, and particularly preferably from 100 to 2000 / m. In order for the ejection material to collide with the target surface, the pressure (discharge pressure) applied to the fluid such as air used as a medium (discharge pressure) is preferably 1 to 10 kg / cm 2 and particularly preferably 2 to 7 kg / cm 2 is more preferably 3 to 5 kg / cm 2. If this pressure is too high, the impact on the target surface will be strong, causing the cause of cracking or the need for a large-capacity compressor to increase the cost. The distance between the nozzle of the ejected material and the target surface is 5 0 ~ 3 0 0 (Please read the precautions on the back before filling out this page) -Packing · This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ) -11-570994 A 7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of invention (9) mm is better. When the distance is too short, the effective area to be subjected to the ejection process becomes small, and it is not very effective. Conversely, if the distance is too large, the pressure becomes insufficient, and it takes a long time for the ejection process. The ejection treatment time of the target surface is related to the ejection pressure and the type of ejection material, but it is better to treat it with 0 · 0 5 ~ 1 · 0 seconds / cm 2. As a result, Ra of the entire sputtered surface of the I T0 sintered body is 1.0 or more and m or more, and Ry is 8 or more. Secondly, the protruding corroded portion is processed by a flat grinding disk or the like to reduce the surface roughness. After first grinding with a grindstone around # 1 2 0, secondary grinding with a grindstone around # 4 0 0, followed by honing with a grindstone around # 8 0 0. As a result, Ra of the protruding corroded portion can be adjusted to 0.1 / 1 m or less. In this way, sufficient effects of the present invention can also be obtained. However, it is more preferable to use a grinding stone with a fine grain size or an aluminum paste processing to make R y 1.0 or less. By making the shape of the target to protrude the corroded part, it is industrially possible to manufacture IT that is not affected by the small arrangement of magnets or the strength of the magnet, the generation of pellets is suppressed, and the adhesion of the yellow powder is enhanced. The target is an IT0 target that suppresses the adhesion of substrates to both particles of spherule origin and yellow powder origin. In addition, the definitions and measurement methods of Ra and R y in the present invention are described in accordance with J I S B 0 60 1-1 994. The I T0 sintered body obtained by joining an indium solder or the like to a base plate made of oxygen-free copper or the like can be easily targeted. When sputtering, sputter gas is added to inert gas such as argon, etc. (please read the precautions on the back before filling this page)-installation ·,?! This paper size applies Chinese National Standard (CNS) A4 specification ( 210X297 mm) -12- 570994 A7 B7 5. Description of the invention (10) (Please read the precautions on the back before filling this page) Oxygen, etc., usually control these pressures at 2 ~ 1 OmTo rr. DC C, R F, or a combination of DC and R F may be used as the power application method for sputtering. Furthermore, the sputtering target according to the present invention is also effective for a target having a third element added to I T0 for the purpose of having an additional function. The third element may be exemplified by Mg, Al, Si, Ti, Zn, Ga, Ge, Y, Zr, Nb, H1, Ta, and the like. Although the addition amount of these elements is not limited, in order not to degrade the excellent optical and electrical characteristics of I and D, (total of the oxide of the third element) / (IT0 + the oxide of the third element Total) / 100, more than 0%, less than 20% (weight ratio) is preferred. [Examples] Hereinafter, the present invention will be described in more detail with examples, but the present invention is not limited to these examples. (Example 1) The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed an indium oxide powder with an average particle size of 1.3 g / m and a tin oxide powder with an average particle size of 0.7 g / m. g was put into a polyethylene tank, and mixed with a dry ball mill for 72 hours to produce a mixed powder. The slag density (T a p) of the aforementioned mixed powder was measured to be 2.0 g / cm3. Next, a dispersant, a binder, and ion-exchanged water were added to the above-mentioned mixed powder and mixed with a ball mill to prepare a casting slurry. Next, an antifoaming agent was added to the slurry, and a defoaming treatment was performed in a vacuum. -13- This paper size applies Chinese National Standard (CNS) A4 specification (21 × 297 mm) 570994 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (11) The inflow can be formed as shown in Figure 4 This mold was cast into a shape to obtain an IT0 shaped body. This molded body was subjected to a C I P treatment at a pressure of 3 t ο n / cm 2 after drying. Then, in order to remove the dispersant and the binder present in the formed body, the formed body was placed in an atmosphere firing furnace, and the deaeration treatment was performed under the following conditions. (Descaling conditions) Dewaxing temperature: 4 5 ° C, heating rate: 5 t: / H r, holding time: next, set the molded body after dewaxing in a pure oxygen environment sintering furnace, and perform the following conditions sintering. (Sintering conditions) Sintering temperature: 15 0 ° C, heating rate: 25 ° C / Hr, sintering time: 10 hours, environment: from 8 0 ° C at elevated temperature to 40 0 ° C at lower temperature Into (load weight / oxygen flow rate) 20. 8 to introduce pure oxygen into the furnace. The size of the obtained sintered body was 101.6 x 177.8 mm, the thickness of the corroded portion was 8 mm, and the thickness of the non-corroded portion was 6 mm. The density of this sintered body was measured by Archimedes' method according to J I S R 1 6 3 4 — 1 9 9 8. The results are shown in Table 1. Next, the surface of the surface which becomes the sputtered surface of this sintered body is spray-processed. The discharge pressure is 4 kg / cm 2, the distance between the nozzle and the target surface is 15 Q mm, and the particle size of the discharge material is 2 5 ~ 1 0 6 " m (average particle size 5 3 // m) Beads of spheroidal spheroids, sprayed out of this paper standard (CNS) A4 size (21GX297 mm) Heart *-(Please read the precautions on the back before filling this page)

、1T 570994 A7 B7 五、發明説明(12) 處理時間爲8 0秒。在噴出處理後測定標靶的濺鍍面(噴 出處理面)的R a以及R y。顯示結果於表1。 (請先閲讀背面之注意事項再填寫本頁) 其次’使用平面磨削盤進行突出部分的表面加工。最 初使用# 1 2 0的磨石,然後依次增加# 4 0 0、 # 8 0 0的磨石的粒度號。測定磨削後的突出部的r a以 及R y。顯示結果於表1。 其次’在由無氧銅所構成的底板上使用銦銲錫等接合 此燒結體,以獲得I T〇標靶。 由以下的濺鍍條件,在接近標靶有效端濺鍍此標靶 6〇小時。 (濺鍍條件) DC功率:300w,濺鍍氣體:Ar+〇2,氣壓: 5mT〇rr,〇2/Ar:〇.l%。 然後’在裝置內投入S i晶圓再度以上述條件在晶圓 上形成1 5 0 n m的I T〇膜後,使用雷射微粒計數器測 定附著於晶圓上的1 // m以上的微粒數。顯示結果於表1 。只不過附著一點點的微粒。 經濟部智慧財產局員工消費合作社印製 觀察使用後的標靶表面,球粒產生量少黃色粉末強固 地附著於標靶表面。 (實施例2 ) 利用與實施例1同樣的方法獲得燒結體。測定所得到 的燒結體的密度的結果顯示於表1。對此燒結體利用與實 施例1同樣的方法進行噴出處理。處理面的R a以及R y -15- 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X297公釐) 570994 A7 B7 五、發明説明(13) (請先閲讀背面之注意事項再填寫本頁) 顯不於表1。其次,對突出的腐鈾部利用與實施例1同樣 的方法進行表面磨削後,更使用# 1 2 0 〇的磨石進行磨 削。磨削後的R a以及R y顯示於表1。 其次,利用與實施例1同樣的方法標靶化後,實施與 實施例1相同的濺鍍。顯示結果於表1 。只不過附著一點 點的微粒。 觀察使用後的標靶表面,球粒產生量少黃色粉末強固 地附著於標靶表面。 (比較例1 ) 利用與實施例1同樣的方法製作鑄入用泥獎,以流入 可形成平行平板型的成形體的鑄模進行鑄入成形,得到 I T〇成形體。此後利用與實施例1同樣的方法,進行乾 燥、C I P、脫鱲、燒結,得到1 0 1 · 6 m m x 1 7 7 · 8 m m厚度8 m m的燒結體。測定所得到的燒結 體的密度的顯示結果於表1。 經濟部智慧財產局員工消費合作社印製 對此燒結體利用與實施例1同樣的方法進行濺鍍面的 噴出處理。處理面的R a以及R y顯示於表丄。 其次’利用與實施例1同樣的方法標靶化後,實施與 實施例1相同的濺鍍。顯示結果於表1。許多微粒附著於 基板。 觀察使用後的標靶表面’黃色粉末強固地附著於標革巴 表面的多量的球粒產生。 -16- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 570994 A7 B7 五、發明説明(14) (比較例2 ) (請先閱讀背面之注意事項再填寫本頁) 利用與實施例1同樣的方法製作鑄入用泥漿,以流入 可形成平行平板型的成形體的鑄模進行鑄入成形,得到 I 丁〇成形體。此後利用與實施例1同樣的方法,進行乾 無、C I P、脫鱲、燒結’得到1 〇 1 · 6 m m X 1 7 7 · 8 m m厚度8 m m的燒結體。測定所得到的燒結 體的密度的顯示結果於表1。 對此燒結體利用與實施例1同樣的方法進行濺鍍面的 表面加工。最初使用# 1 2 0的磨石,然後依次增加 # 4 0 0、# 8 0 0的磨石的粒度號。磨削後的突出部的 R a以及R y的測定顯示結果於表1。 其次’利用與實施例1同樣的方法標靶化後,實施與 實施例1相同的濺鍍。顯示結果於表1。許多微粒附著:方公 基板。 觀察使用後的標祀表面,球粒產生量少的黃色粉$白勺 一部分由標靶表面剝離。 經濟部智慧財產局員工消費合作社印製 (比較例3 ) 利用與實施例1同樣的方法製作鑄入用泥漿,以流人 可形成平行平板型的成形體的鑄模進行鑄入成形,彳辱g| I 丁〇成形體。此後利用與實施例1同樣的方法,進行乾 燥、c I P、脫躐、燒結,得到1 0 1 · 6 m m X 1 7 7 · 8 m m厚度8 m m的燒結體。測定所得到的燒結 體的密度的顯示結果於表1。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公楚Ί ' -- 570994 經濟部智慧財產局員工消費合作社印製 A7 B7 __五、發明説明(15) 對此燒結體使用平面磨削盤進行濺鍍面的表面加工。 最初使用# 1 2 0的磨石,然後依次增加# 4 0 0、 # 8 0 0的磨石的粒度號。磨削後的突出部的R a以及 R y的測定顯示結果於表1。 其次,在完成比較例2所使用的濺鍍的標靶判別原來 的腐蝕區域,對相當於該腐蝕區域的部分,對以比較例3 製作中的燒結體實施遮蔽(Masking )處理。對此被進行遮 蔽處理的燒結體利用與實施例1同樣的方法進行濺鍍面的 噴出處理。未被進行遮蔽處理的面的R a以及R y顯示於 表1。 其次,利用與實施例1同樣的方法標靶化後,實施與 實施例1相同的濺鍍。顯示結果於表1。許多微粒附著於 基板。 觀察使用後的標靶表面,大致上球粒產生量少黃色粉 末附著於標靶表面。但是,一部分在腐蝕區域被實施噴出 處理’此部份產生大量的球粒。而且,形成有未被噴出處 理的非腐蝕區域,在此部份黃色粉末的剝離被觀察到。 (比較例4 ) 利用與實施例1同樣的方法得到I 丁〇燒結體。測定 所得到的燒結體的密度的結果顯示於表1。對此燒結體利 用與實施例1同樣的方法進行噴出處理。處理後的R a以 及R y顯示於表1。 其次’利用與實施例1同樣的方法標靶化後,實施與 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 18 (請先閲讀背面之注意事項再填寫本頁) -裝- 訂 570994 A7 ________ B7_ 五、發明説明(16) 貫施例1相同的濺鍍。顯示結果於表1。許多微粒附著於 基板。 觀察使用後的標靶表面,黃色粉末強固地附著於標粑 表面的多量的球粒產生。 〔表1〕 密度 [%] 腐鈾部 非腐 以及個 貪虫部 i斜部 微粒附著數 [個] Ra[Mm] Ry[Mm] Ra[μ m] Ry[Mm] 實施例1 99.7 0.07 1.10 1.40 10.60 2 竇施例2 99.7 0.06 0.64 1.36 10.45 2 比較例1 99.7 1.40 10.66 1.42 10.70 20 比較例2 99.7 0.07 1.08 0.07 1.08 26 比較例3 99.7 0.07 1.09 1.40 10.58 12 比較例4 99.7 1.41 10.77 1.41 10.76 19 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 【發明的功效】 藉由本發明在工業上可生產可抑制球粒起因以及黃色 粉末起因雙方的微粒之I T〇濺鍍標靶。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -19-1T 570994 A7 B7 V. Description of the invention (12) The processing time is 80 seconds. After the ejection treatment, Ra and R y of the sputtering surface (the ejection treatment surface) of the target were measured. The results are shown in Table 1. (Please read the precautions on the back before filling out this page.) Secondly, use a surface grinding disc to finish the surface of the protruding part. Initially use the # 1 2 0 millstone, and then increase the # 4 0 0, # 8 0 0 millstone size in order. R a and R y of the protruding portion after grinding were measured. The results are shown in Table 1. Next, 'the sintered body was bonded on a base plate made of oxygen-free copper using indium solder or the like to obtain an I TO target. The target was sputtered for 60 hours near the effective end of the target under the following sputtering conditions. (Sputtering conditions) DC power: 300w, sputtering gas: Ar + 〇2, air pressure: 5mTorr, 〇2 / Ar: 0.1%. Then, after the Si wafer is put into the device and a 150 nm ITO film is formed on the wafer again under the above conditions, the number of particles of 1 // m or more attached to the wafer is measured using a laser particle counter. The results are shown in Table 1. Just a little bit of particles. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Observe the surface of the target after use. The amount of pellets generated is small and the yellow powder is firmly attached to the target surface. (Example 2) A sintered body was obtained by the same method as in Example 1. Table 1 shows the results of measuring the density of the obtained sintered body. This sintered body was ejected by the same method as in Example 1. R a and R y of processing surface -15- This paper size applies Chinese National Standard (CNS) A4 specification (210 X297 mm) 570994 A7 B7 V. Description of invention (13) (Please read the precautions on the back before filling in this Page) is not shown in Table 1. Next, after the surface of the protruding uranium decay part was ground in the same manner as in Example 1, it was ground using a # 1 2 00 grindstone. R a and R y after grinding are shown in Table 1. Next, after targetting by the same method as in Example 1, sputtering similar to that in Example 1 was performed. The results are shown in Table 1. Just a little bit of particles. Observe the surface of the target after use. The amount of pellets produced is small and the yellow powder adheres strongly to the surface of the target. (Comparative Example 1) A mud mold for casting was produced in the same manner as in Example 1, and cast into a mold that could flow into a parallel flat plate-shaped molded body to obtain an I TO molded body. Thereafter, by the same method as in Example 1, drying, C I P, descaling, and sintering were performed to obtain a sintered body having a thickness of 10 1 · 6 m x 1 7 7 · 8 m m and a thickness of 8 m. Table 1 shows the results of measuring the density of the obtained sintered body. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This sintered body was subjected to a sputtering process by the same method as in Example 1. Ra and R y of the treated surface are shown in Table VII. Next, 'targeting was performed by the same method as in Example 1, and then the same sputtering as in Example 1 was performed. The results are shown in Table 1. Many particles are attached to the substrate. Observation was made of the generation of a large number of pellets on the target surface 'yellow powder which strongly adhered to the surface of the target after use. -16- This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) 570994 A7 B7 V. Description of Invention (14) (Comparative Example 2) (Please read the precautions on the back before filling this page) Use and In the same manner as in Example 1, a casting slurry was prepared and cast into a mold capable of flowing into a parallel flat plate-shaped molded body to obtain a molded body. Thereafter, dry sintering, C I P, descaling, and sintering were performed in the same manner as in Example 1 to obtain a sintered body having a thickness of 10 · 6 m × 1 7 · 8 m m and a thickness of 8 m. Table 1 shows the results of measuring the density of the obtained sintered body. This sintered body was subjected to surface processing on the sputtered surface by the same method as in Example 1. Initially use the # 1 2 0 millstone, then increase the grain size of # 4 0 0, # 8 0 0 millstone in order. Table 1 shows the measurement results of Ra and R y of the protrusions after grinding. Next, 'targeting was performed by the same method as in Example 1, and then the same sputtering as in Example 1 was performed. The results are shown in Table 1. Many particles are attached: square male substrate. Observing the target surface after use, part of the yellow powder with a small amount of pellets was peeled off from the target surface. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (Comparative Example 3) The casting slurry was produced by the same method as in Example 1, and cast into a mold that can be formed into a parallel flat-shaped molded body. | I 丁 〇Shaped body. Thereafter, by the same method as in Example 1, drying, c I P, descaling, and sintering were performed to obtain a sintered body having a thickness of 10 1 · 6 m m × 1 7 7 · 8 m m and a thickness of 8 m m. Table 1 shows the results of measuring the density of the obtained sintered body. This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297).-570994 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 __ 5. Description of the invention (15) Surface grinding of this sintered body The surface of the plate is sputtered. The grindstone of # 1 2 0 is used initially, and then the grain size of the grindstone of # 4 0 0 and # 8 0 0 is increased in order. Ra and R y of the protrusion after grinding. The results of the measurements are shown in Table 1. Next, the original corrosion area was identified at the target used for completion of the sputtering in Comparative Example 2, and the part corresponding to the corrosion area was masked for the sintered body produced in Comparative Example 3. (Masking) treatment. The sintered body subjected to the masking treatment was sprayed on the sputtered surface by the same method as in Example 1. Ra and R y of the surface not subjected to the masking treatment are shown in Table 1. Next, After target formation by the same method as in Example 1, the same sputtering as in Example 1 was performed. The results are shown in Table 1. Many particles adhered to the substrate. Observing the target surface after use, the amount of pellets produced was generally small. Yellow powder attached The target surface. However, a part was sprayed in the corroded area. 'This part produced a large number of pellets. Moreover, a non-corroded area without the sprayed treatment was formed, and peeling of the yellow powder was observed in this part. Comparative Example 4) An I but sintered body was obtained by the same method as in Example 1. The results of measuring the density of the obtained sintered body are shown in Table 1. This sintered body was subjected to the ejection treatment by the same method as in Example 1. The processed R a and R y are shown in Table 1. Secondly, after the target was targeted by the same method as in Example 1, the Chinese National Standard (CNS) A4 specification (210X297 mm) applicable to this paper size was implemented. 18 (Please Read the precautions on the back before filling this page)-Binding-Order 570994 A7 ________ B7_ V. Description of the Invention (16) The same sputtering as in Example 1. The results are shown in Table 1. Many particles are attached to the substrate. After observation and use On the surface of the target, a large amount of spherules with yellow powder firmly attached to the surface of the target are produced. [Table 1] Density [%] Non-corrosive uranium decay part and the number of particles attached to the slanting part of the worm part [Ra] Ra [Mm] Ry [Mm] Ra [μm] Ry [Mm] Example 1 99.7 0.07 1.10 1.40 10.60 2 Sinus Example 2 99.7 0.06 0.64 1.36 10.45 2 Comparative Example 1 99.7 1.40 10.66 1.42 10.70 20 Comparative Example 2 99.7 0.07 1.08 0.07 1.08 26 Comparative Example 3 99.7 0.07 1.09 1.40 10.58 12 Comparative Example 4 99.7 1.41 10.77 1.41 10.76 19 (Please read the notes on the back before filling out this page) Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives [Effects of Invention] According to the present invention, it is possible to industrially produce an IT0 sputtering target that can suppress particles of both the cause of pellets and the cause of yellow powder. This paper size applies to China National Standard (CNS) A4 (210X297 mm) -19-

Claims (1)

570994570994 Pf^3 第9 1 1 06365號專利申請案 中文申請專利範圍修正本 mm*''» BM_1 " 民國4 f ^月公應雨丨正Pf ^ 3 Patent Application No. 9 1 1 06365 Chinese Amendment of Patent Application Range mm * '' »BM_1 " Republic of China 4 f ^ 月 公 应 雨 丨 Zheng 經濟部智慧財產局員工消費合作社印製 1、 一種ITO濺鍍標靶,實質上係由銦、錫以及氧 所構成,其特徵爲:令非腐蝕部的厚度比腐蝕部的厚度薄 ,以使腐蝕部突出,並且爲以鈍角的斜面連接包含該腐蝕 部的平面與包含該非腐鈾部的平面之形狀,令該突出的腐 鈾部的表面粗糙度(R a )爲〇 · 1 // m以下,令連接非 腐鈾部以及腐蝕部與非腐蝕部的斜面的表面粗糙度(R a )爲1 · 0 // m以上。 2、 如申請專利範圍第1項所述之I T〇濺鍍標靶’ 其中I T〇燒結體的相對密度爲9 9 %以上。 3、 如申請專利範圍第1項所述之I T〇濺鍍標靶’· 其中突出的腐蝕部的最大高度(Ry)爲1 · 0//m以下 0 4、 如申請專利範圍第2項所述之I T〇濺鍍標靶, 其中突出的腐蝕部的最大高度(Ry)爲1 · 0//m以下 〇 5、 如申請專利範圍第1項至第4項中任一項所述之 I 丁 〇濺鍍標靶,其中連接非腐蝕部與腐蝕部與非腐鈾部 的斜面的最大高度(Ry )爲8 . 〇 //m以上。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) (請先閲讀背面之注意事項再填寫本頁) 1^- 、πPrinted by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. An ITO sputtering target is essentially composed of indium, tin, and oxygen. It is characterized by making the thickness of the non-corrosive part thinner than The corroded part protrudes, and is a shape that connects a plane including the corroded part with a plane including the non-corrosive uranium part at an obtuse angle, so that the surface roughness (R a) of the protruded corroded uranium part is 0.1 · m Hereinafter, the surface roughness (R a) of the slope connecting the non-corrosive uranium portion and the corroded portion and the non-corroded portion is made 1 · 0 // m or more. 2. The I T〇 sputter target according to item 1 of the scope of the patent application, wherein the relative density of the I T0 sintered body is more than 99%. 3. IT 0 Sputtering Target as described in item 1 of the scope of the patent application, wherein the maximum height (Ry) of the protruding corrosion part is 1 · 0 // m or less 0 4. As described in the second scope of the patent application scope The IT0 sputtering target described above, wherein the maximum height (Ry) of the protruding corroded part is 1 · 0 // m or less. 5. As described in any one of items 1 to 4 of the scope of patent application. The sputtering target, but the maximum height (Ry) of the inclined surface connecting the non-corrosive part, the corrosive part and the non-corrosive uranium part is 8.0 // m or more. This paper size applies to Chinese National Standard (CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page) 1 ^-、 π
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KR100880174B1 (en) 2009-02-06
JP2002302762A (en) 2002-10-18
KR20020079404A (en) 2002-10-19
CN1385553A (en) 2002-12-18

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