TW565530B

TW565530B - CMOS compatible microswitches

Info

Publication number: TW565530B
Application number: TW92100385A
Authority: TW
Inventors: Jung-Tang Huang; Sheng-Hung Li; Chien-Chao Heng; Pei-Zen Chang
Original assignee: Lenghways Technology Co Ltd
Priority date: 2003-01-09
Filing date: 2003-01-09
Publication date: 2003-12-11
Also published as: TW200412323A

Abstract

This invention presents Microwave Switches by combining CMOS technology and MEMS technology. This micro switch shows much better performance than the conventional devices such as diode switches in high frequency. In process the structured layers of the microswitch are fabricated by IC foundry such as TSMC, then one or two MEMS post processes are used to etch the sacrificial layer and complete the switch. By making use of the multi-layered intercoonection of modern CMOS process and MEMS technology, the invetion also present a self-packaging microswitch on chip. By this way, the integration of off-chip RF passive components and micro electronic circuits can be achieved. Therefore it can reduce the chip size and cost down in the applications of wireless communication.

Description

565530 五、發明說明α) 【發明所屬之技術領域】一種整合CMOS技術與MEMS技術的微型開關（Micro Switch)，用以取代在高頻性能不佳的固態開關元件，特別是指在製程方面可以積體電路標準製程製作，如台積電的0 · 3 5微米、0 · 2 5微米製程等製作開關雛形，最後再加上微機電後製程來完成的微型開關。【先前技術】以微機電（MEMS)技術製作的微型開關（MEMS swi tch)最先於1 7 9 7年由Κ· Ε· Petersen提出，當時僅是用以切換低頻的訊號’而之後相關的研究亦證明微型開關在微波頻段 (Microwave Frequencies)也有很好的性能表現，甚至優於固態開關（Solid-State Switch)，如·· GaAs MESFET或 P I N一極體…等。近年來無線通訊系統可說是最熱門的項目之一’基於微型開關在高頻特性及易與半導體製程整合 ^，點，因此-些微型開關相關的研究也大都是集中在將二應用=微波元件上’微型開關於無線通訊收發模組中所 :以：肩的角色’包含訊號的切才奐、可調濾波器、可變電雖然以微機電技術_从多優點，但微機電之多微型開關（Micro Switch)有很其製程複雜，&定成敗】：膜為難度相當高之製程’因為鍵問題，相對的晶圓代工：眾多’且尚包含一些未知的關有相當高的良率及穩ife(uMc)，它們的標準cM〇st程均具565530 V. Description of the invention α) [Technical field to which the invention belongs] A micro switch that integrates CMOS technology and MEMS technology is used to replace solid-state switching elements with poor high-frequency performance, especially in terms of manufacturing process. Manufacturing of integrated circuit standard processes, such as TSMC's 0.35 micron, 0.5 micron process, etc. to make prototype switches, and finally adding micro-electromechanical post-processing to complete the micro switch. [Previous technology] Micro-electromechanical (MEMS) technology-made micro-switches (MEMS switz) were first proposed by K. Petersen in 1977. At that time, they were only used to switch low-frequency signals. Research also proves that microswitches also perform very well in the microwave frequency range (Microwave Frequencies), and even outperform solid-state switches, such as GaAs MESFET or PIN monopoles. In recent years, wireless communication systems can be said to be one of the most popular projects. 'Based on the high-frequency characteristics of micro-switches and easy integration with semiconductor processes, this is why most of the research on micro-switches is focused on the application of two = microwave The 'micro switch' in the wireless communication transceiver module on the component: the role of the shoulder 'includes the cutting edge of the signal, the tunable filter, and the variable power. Although it uses MEMS technology, it has many advantages, but there are many MEMS. The micro switch has a very complicated process, & success or failure.]: The film is a very difficult process. 'Because of the key problem, the relative wafer foundry: many', but also contains some unknown. Yield and stability ife (uMc), their standard cM〇st process has

565530 五、發明說明在此前 MEMS後製具有高效微型開關用標準製關是利用性，可以縮小元件需設備’ 產以應用【内容】本發明目 (2) 題之下’本發明即結合積體電路標準製程技術及程（post processing)，發展出可以大量生產且能、南整合性（High Level 〇f Integration)的陣列（miCroswitch array)，同時亦提出一種利程的多層結構達到自我封裝的方法，由於微型開標準積體電路所製成，目此和微電子製程有相容將開關與電路整合在同一塊晶片上，減少干擾、所：面ί、降低成*。再加上只需購買後製程所可減 >、購買昂貴設備的成本支出，如此可大量生在無線通訊產業。的之本發明目的之二本發明目的之本發明目的之四本發明目本發明目的之五的之六與積體電路整合使開關整體所佔的面積變小。將微型開關與積體電路一起製造，省去封裝在一起的成本，並可縮小整體之體積或面積。利用積體電路的標準製程來設計微型開關，可避免購買高價的製程設備及提高製程良率。因為後製程設計得宜，可減少光罩數量。使操作電壓降低至5 V以下。利用標準製程的多層結構達到自我封裝的目的。 '565530 V. Description of the invention In the previous MEMS post-manufacture, the standard system for high-efficiency micro switches was used, which can reduce the components and equipment required. 'Production and application [Content] Under the purpose of the present invention (2), the present invention is a combination of integrated products Circuit standard process technology and post processing have developed a miCroswitch array that can be mass-produced and capable of high level integration (High Level 0f Integration). At the same time, it also proposes a multi-layer structure with a profitable process to achieve self-encapsulation. Because the micro-open standard integrated circuit is made, it is compatible with the microelectronics process. The switch and the circuit are integrated on the same chip, which reduces interference, reduces the surface area, and reduces it to *. Coupled with the fact that only the post-purchase process can be used to reduce > and the cost of purchasing expensive equipment, it can be born in a large amount in the wireless communication industry. The purpose of the present invention is the second purpose of the present invention, the fourth purpose of the present invention, the fourth purpose of the present invention, the fifth of the purpose of the present invention, and the integration of the integrated circuit to reduce the area occupied by the switch as a whole. The micro switch is manufactured together with the integrated circuit, which saves the cost of packaging and reduces the overall size or area. Using the standard process of integrated circuits to design micro switches can avoid the purchase of expensive process equipment and improve process yield. Because the post-process design is appropriate, the number of photomasks can be reduced. Reduce the operating voltage to below 5 V. The multi-layer structure of the standard process is used to achieve the purpose of self-encapsulation. '

第8頁 565530Page 8 565530

的、特徵及功效能夠有更下列圖示詳細說明於後：為使貴審查委員對本發明之目進一步的瞭解與認識，茲配合 24 Metal 1 25 Metal 2 26 Metal 3 27 Metal 4 28 Metal 5 29 contact 30 Via 1 31 Via 2 32 Via 3 33 Via 4 3 4保護層 35多晶石夕Poly 3 6蝕刻孔 1 0基材 11可動電極 1 2下電極 1 3固定埠 1 4支撐結構 1 5絕緣介電層 1 6金屬接觸片 1 7斷開的共面波導（c p w)傳輪線 18共面波導（CPW)傳輸線 1 9電鑛後上之電極 20鎢 2 1氮化>ε夕 2 2二氧化矽 23鈦本設計將以台積電0 · 3 5 u m 1 p 4 m及0 · 2 5 u m 1 p 5 m標準製程作為設計基準，但亦可應用至〇· 18 um 、〇· 13 um等製程。台積電0.35um lp4m標準製程如圖一所示是由一層p〇iy 35 及四層金屬（鋁矽銅合金）組成，分別為Metal 4 (最上一The features, functions, and functions can be described in more detail with the following diagrams: In order for your reviewers to further understand and understand the purpose of the present invention, we hereby cooperate with 24 Metal 1 25 Metal 2 26 Metal 3 27 Metal 4 28 Metal 5 29 contact 30 Via 1 31 Via 2 32 Via 3 33 Via 4 3 4 Protective layer 35 Polycrystalline stone Poly 3 6 Etching hole 1 0 Substrate 11 Movable electrode 1 2 Lower electrode 1 3 Fixed port 1 4 Support structure 1 5 Insulation and dielectric Layer 1 6 Metal contact piece 1 7 Coplanar waveguide (cpw) transmission line disconnected 18 Coplanar waveguide (CPW) transmission line 1 9 Electrodes after power mining 20 Tungsten 2 1 Nitriding> ε 2 2 Dioxide The silicon 23 titanium design will be based on TSMC's standard manufacturing processes of 0.35 um 1 p 4 m and 0.25 um 1 p 5 m, but it can also be applied to processes such as 0.18 um and 0.13 um. TSMC's standard 0.35um lp4m standard process is shown in Figure 1. It consists of a layer of poiy 35 and four layers of metal (aluminum-silicon-copper alloy), which are Metal 4 (top

第9頁 565530 五、發明說明（4) 層金屬）（27)、Metal 3 (最上倒數第二層金屬）（26)、 Metal 2(最上倒數第三金屬）（25)、 Metal 1(最上倒數第四金屬）（24)，金屬層下方有鈦23金屬作為阻障層，金屬層與金屬層間以插銷（v i a )相連結，分別為y i a 3 (最上層插銷）（32 )、Vi a 2 (最上倒數第二層插銷）（3 1 )、 γί ^ (最上倒數第三插銷）（3 〇 )，此插銷的材料為金屬鎢2 〇， 1 接 poly 35與 Metal 1(24)則是 contact (29)，其餘部’八則填上二氧化矽2 2，最上方則是以氮化矽及二氧化矽二成的保護層34,若有佈局pad，則保護層在pad上方合2 使其裸露出來。〇· 25um lp5m標準製程剖面圖如圖二9幵" 示，是由一層poly及五層金屬（鋁矽銅合 —甘以rwncJW 述lp4_準製程類推。用積體電路標準製程中連接〃要特徵乃疋利線、固定埠、可動電極等。 ^ 歼的口凡號傳輸輸線、固定埠則由金屬層與^ ^ j下層的金屬層構成傳金屬層並置於傳輸線之上，、可動電極為較上層所謂的固定埠與可動電極撐結構（較上層金屬層）將結構連結於固定埠上，並盥如此可動電極將藉由支撐 (中間金屬層作為犧牲層?:線維持一懸空的起始間隔與可動電極，其電性相冑：：：謂的固定埠、支樓結構、可動電極將受靜電力由於可動電極為；：：一電壓差於可動電極與衫響而向傳輸線方向產生位移動， 565530 五、發明說明（5) 一般而言，微型開關依其切換機制大致可分為兩種形式： 1 ·金屬接觸式（m e t a 1 c ο n t a c t)開關：由訊號線斷開的共平面波導1 7 ( C ο p 1 a n a r w a v e g u i d e )和機械式開關所組成，懸浮於間隙上之微型開關有一金屬接觸（metal contact 1 6，當開關金屬接觸線 1 6貼上訊號線時訊號導通，其開關狀態如圖三所示。 2 .電容式（M e m b r a n e )開關：此開關是控制電容值大小決定微波訊號之通過與否，如圖四所示，當開關薄膜1 1往下貼近傳輸線1 8時，微波訊號將因大電容而無法傳送；當不施靜電壓時，薄膜回到原先較高之位置時，訊號可順利導通。以金屬接觸式開關為例說明其致動方式如下：如圖三所示金屬接觸式開關結構，當上電極11和下方斷開共面波導（c ο p 1 a n a r w a v e g u i d e )傳輸線 1 7的接地線間施加一電壓差時，因靜電力而使上電極產生位移如圖三 (C)，假設其位移量為y，gO為上下電極間距，ε為介質之電容率，Α為電極面積，則上電極所受之靜電力表示於第一式。Page 9 565530 V. Description of the invention (4) Layer of metal) (27), Metal 3 (top-most metal) (26), Metal 2 (top-most metal) (25), Metal 1 (top-most metal) Fourth metal) (24). Titanium 23 metal is used as a barrier layer under the metal layer. The metal layer and the metal layer are connected by vias (via), which are respectively yia 3 (topmost pin) (32), Vi a 2 ( The uppermost penultimate layer pin) (3 1), γί ^ (the uppermost penultimate layer pin) (30), the material of this pin is metal tungsten 2 0, 1 is connected to poly 35 and Metal 1 (24) is contact ( 29), the rest of the 'eight are filled with silicon dioxide 22, the top is a protective layer 34 composed of silicon nitride and silicon dioxide, if there is a layout pad, the protective layer is combined 2 above the pad to make it Naked. 〇 · 25um lp5m standard process cross-section is shown in Figure II 9 幵 ", which is made of a layer of poly and five layers of metal (aluminum-silicon-copper-gan, rwncJW described lp4_ quasi process analogy. Use integrated circuit standard process to connect 〃 The main features are sturdy lines, fixed ports, movable electrodes, etc. ^ Jie Fanfan transmission transmission lines, fixed ports are composed of a metal layer and a metal layer below ^ ^ j to form a metal transmission layer and be placed on the transmission line. The electrode is a so-called fixed port and a movable electrode support structure (upper metal layer) on the upper layer to connect the structure to the fixed port, and the movable electrode will be supported by the intermediate metal layer as a sacrificial layer? The starting interval is electrically related to the movable electrode: ::: the fixed port, the structure of the building, and the movable electrode will be subjected to electrostatic force due to the movable electrode; ::: a voltage is worse than the movable electrode and the shirt ringing in the direction of the transmission line Generate bit movement, 565530 V. Description of the invention (5) Generally speaking, micro switches can be roughly divided into two types according to their switching mechanism: 1 Metal contact (meta 1 c ntact) switch: by signal The disconnected coplanar waveguide 17 (C ο p 1 anarwaveguide) and the mechanical switch, the micro switch suspended above the gap has a metal contact (metal contact 1 6), when the switch metal contact line 16 is attached to the signal line The signal is turned on, and its switching state is shown in Figure 3. 2. Capacitive (M embrane) switch: This switch controls the value of the capacitance to determine the passage of the microwave signal, as shown in Figure 4, when the switch film 1 1 goes down When it is close to the transmission line 18, the microwave signal cannot be transmitted due to the large capacitance; when the static voltage is not applied, the signal can be smoothly conducted when the film returns to the original high position. A metal contact switch is used as an example to explain its actuation method. It is as follows: As shown in the metal contact switch structure shown in FIG. 3, when a voltage difference is applied between the upper electrode 11 and the ground line of the coplanar waveguide (c ο p 1 anarwaveguide) transmission line 17 when the upper electrode 11 is disconnected, the upper surface is caused by electrostatic force. The displacement of the electrode is shown in Figure 3 (C). Assuming its displacement is y, gO is the distance between the upper and lower electrodes, ε is the permittivity of the medium, and A is the electrode area. It represents a force in the first formula.

565530 五、發明說明（6) £r565530 V. Description of the Invention (6) £ r

F 第一式由於靜電力是均勻分佈在上電極上，且上電極的剛性也遠大於支撐結構，若將第一式除以電極面積則可得到分佈於電極上之等效壓力P: P-F/A- 6 /2(g(hy) 第二式第二式說明了靜電力施加於上電極的等效壓力，也就是說在分析上可以先利用施加於上電極的壓力來求出其變形，再將其結果代入第二式來求出其相對應的電壓值，如此一來，便可以將電磁力的分析轉換成結構力的方式來分析，以減少分析上的困難。第三式則表示出驅動電壓Vp和 gO (上下電極間距）及A (電極面積）的關係。F The first formula is because the electrostatic force is uniformly distributed on the upper electrode, and the rigidity of the upper electrode is much greater than the support structure. If the first formula is divided by the electrode area, the equivalent pressure distributed on the electrode can be obtained. P: PF / A- 6/2 (g (hy) The second formula The second formula explains the equivalent pressure exerted by the electrostatic force on the upper electrode, that is, the analysis can first use the pressure applied to the upper electrode to determine its deformation. The result is then substituted into the second formula to find the corresponding voltage value. In this way, the analysis of the electromagnetic force can be converted into a structural force to analyze, so as to reduce the analysis difficulty. The third formula is expressed The relationship between the driving voltage Vp and gO (the distance between the upper and lower electrodes) and A (the area of the electrodes) is shown.

第12頁 565530 五、發明說明（7)Page 12 565530 V. Description of the invention (7)

V, 第三式【實施方式】以下實施例於製程方面主要是利用t smc提供之〇 . 3 5 1P4M及0· 25 " m 1P5M標準製程製造微型開關的主體結"1 構，再以後製程加工，利用反應式離子蝕刻（R丨E)、 ^ 刻（wet- etching)、電鍍等方式以達到懸浮結構的釋t麵電性絕緣。及 [實施例一] 電容式開關：此設計之特徵是完全以CMOS標準製程中的金屬層及插 (VIA)組成’後製程如圖五（a)-(d)所示，說明如下： ' 曰圖五（a) 為透過台積電〇.35um lp4m標準製程所製作^ 晶片剖面圖，以m e t a 1 4 ( 2 7 )作為可動電極， metal 3(26)作為犧牲層，而metal M25)作為下電極，VIA2(31 )則作為介電層，最上方的保V, the third formula [Embodiment] In the following embodiments, in terms of manufacturing process, 0.35 1P4M and 0 · 25 provided by t smc are used to manufacture the main structure of the micro switch in the standard process of m 1P5M, and later In the manufacturing process, reactive ion etching (R 丨 E), wet-etching, and electroplating are used to achieve the release surface electrical insulation of the suspended structure. And [Embodiment 1] Capacitive switch: The characteristic of this design is that it is composed entirely of metal layers and plugs (VIA) in the CMOS standard process. The post-process is shown in Figure 5 (a)-(d), which is explained as follows: ' Figure 5 (a) is a cross-sectional view of a wafer manufactured by TSMC's 0.35um lp4m standard process, with meta 1 4 (2 7) as the movable electrode, metal 3 (26) as the sacrificial layer, and metal M25) as the lower electrode. VIA2 (31) is used as the dielectric layer.

第13頁 565530Page 13 565530

五、發明說明（8) 護層3 4則開洞作為蝕刻孔。圖五（b )利用餘刻孔3 6將犧牲層m e t a 1 3 ( 2 6 )钱刻掉。圖五（c)利用餘刻液的高選擇性將VIA 3的鶴蝕刻除去，留下介電層15。 ^ 圖五（d)最後以RIE乾蝕刻方式將可動電極上方的保護層除去，如此完成可動電極懸浮結構之釋放// 成開關之結構。 70 [實施例二] 金屬接觸式開關：此後製程因為考量到上電極的厚度對驅動電壓影響祀大，故設計一個三明治結構以確保在電鍍時能精準/ &制度’後製程如圖六（a) 一（ d)所示。說明如下：子圖六（a)為透過台積電0· 35um lp4m標準製程所製作完成晶片剖面圖，metal 4 (27)做為電鍍層，vjA : (32)、metal 3(26)則做為可動電極（如此增加t 可動電極厚度而縮小了可動電極與下電極^ " 厚度），VIA 2 (31)作為接觸片；另外π A j (3〇)、 metal 1(24)、 c〇nt(29)、 poly(35>^ 圖六（b) CPW傳輪線，而metal 2(25)則做為犧牲層藉以苟達到懸浮結構的釋放。曰玲由♦虫刻孔進行濕#刻，將m e t a 1 4 ( 2 7 )的|呂銅合金姓刻掉，留下金屬鈦23作為電鍍用晶$ 層（seeding layer)，如此會得到一個空腔。V. Description of the invention (8) The protective layer 34 is opened as an etching hole. Figure 5 (b) uses the remaining holes 36 to cut the sacrificial layer me t a 1 3 (2 6). Figure 5 (c) uses the high selectivity of the etching solution to remove the crane of VIA 3, leaving the dielectric layer 15 behind. ^ Figure 5 (d) Finally, the protective layer above the movable electrode is removed by RIE dry etching, so that the release of the floating structure of the movable electrode is completed. 70 [Example 2] Metal contact switch: Since the thickness of the upper electrode has a great influence on the driving voltage in the subsequent process, a sandwich structure is designed to ensure the accuracy during plating. The & a) One (d). The description is as follows: Figure 6 (a) is a cross-sectional view of the wafer produced by TSMC's standard 0.35um lp4m process. Metal 4 (27) is used as the electroplating layer, and vjA: (32) and metal 3 (26) are used as the movable parts. Electrode (thus increasing the thickness of the movable electrode and reducing the thickness of the movable electrode and the lower electrode ^), VIA 2 (31) is used as the contact piece; in addition, π A j (3〇), metal 1 (24), c〇nt ( 29), poly (35 > ^ Figure 6 (b) CPW transmission line, and metal 2 (25) is used as a sacrificial layer to achieve the release of the suspension structure. Meta 1 4 (2 7) | Lv copper alloy is engraved, leaving metal titanium 23 as a seeding layer for electroplating, so a cavity is obtained.

565530 五、發明說明（9) 圖/、（c)再以欽23為晶種層（seeding iayer)電鍍，由於欽電極下方無任何生長空間，上方有二氧化矽及氮化石夕所組成的保護層，因此電鍍金屬將無法往上或往下生長，電鍍金屬將被限制生長於空腔内’猶如一三明治，如此我們可將電鍍厚度嚴格控制。圖，、（d)再以電鍍後的可動電極做為rie的etch mask，吃出#刻孔，再以濕蝕刻方式，逐層向下蝕刻’最後達到懸浮結構的釋放，完成後如圖六 (d )所示。 [實施例三] 金屬接觸式開關：此接觸式開關之特徵是完全以CM0S標準製程中的金屬層及V I A組成’不需額外電鍍金屬來替代，後製程如圖七 (a) - ( c )所示，說明如下：圖七（a)為透過台積電〇35uin ip4m標準製程所製作完成晶片剖面圖，以Metal 4 (27)、VIA 3(32)及 metal 3(26)做為可動電極（如此增加可動電極厚度而縮小了可動電極與下電極間的厚度）， VIA 2(31)作為接觸片，Metai 2(25)則作為犧牲層’用來讓結構懸浮，另外亦在保護層上開了數個洞’作為蝕刻孔。圖七（b)利用蝕刻孔進行濕蝕刻，利用不同蝕刻液的選565530 V. Description of the invention (9) Figures /, (c) Electroplating with Qin 23 as seeding iayer. Since there is no growth space under Qin electrode, there is protection by silicon dioxide and nitride nitride above. Layer, so the electroplated metal will not grow up or down, and the electroplated metal will be restricted to grow in the cavity 'like a sandwich, so we can strictly control the thickness of the electroplating. Figure, (d) The electroplated movable electrode is used as the etch mask of the rie, and #etched holes are taken out, and then the wet etching method is used to etch down layer by layer to finally achieve the release of the suspended structure, as shown in Figure 6 after completion. (d). [Embodiment 3] Metal contact switch: The characteristic of this contact switch is completely composed of metal layer and VIA in the CMOS standard process. 'No additional plating metal is required to replace it. The post process is shown in Figure 7 (a)-(c) As shown, the explanation is as follows: Figure 7 (a) is a cross-sectional view of a wafer produced by TSMC's standard 35uin ip4m process, with Metal 4 (27), VIA 3 (32), and metal 3 (26) as movable electrodes (as such Increasing the thickness of the movable electrode and reducing the thickness between the movable electrode and the lower electrode), VIA 2 (31) is used as a contact sheet, and Metai 2 (25) is used as a sacrificial layer to suspend the structure, and it is also opened on the protective layer Several holes' serve as etched holes. Figure 7 (b) Wet etching using etching holes, using different etching solutions

第15頁 565530 、發明說明（10) 擇性來蝕刻Metal 4、Metal 2及VIA2，完成如圖七（b )所示結構。圖七（c )最後進行r I e乾蝕刻，將保護層移除，完成如圖七（c )所示微型開關結構。以上各個實施例的開關結構是將可動電極與支撐結構製作於同一層金屬層，將支撐結構置於可動電極旁與固定g 相連接，一般幾乎都是此種設計，而在CM〇s標準製程中當製程愈先進如0.25時為1P5M結構、〇」8為1P6M結構，層^ 愈來愈多，單位面積愈來愈貴，因此要如何縮小開關面積但又不增加驅動電壓的考量下，在先進製程中仍可繼續使 Π了 —大問題。因此我們針對此一問題設計-種利用程的多層、结構所設計的立體支樓結構開關，立體支開關上視圖如圖八所示’ &了確定此創新設計是否 ’關和L::支樓結構更好的效能我們針對平面支撐結構開二：支撑結構開關進行模擬，針對此兩種結構在完全祁u尺寸下以平面支撐結構和立體士連並施予相恭,^ . r ,支標、々構和可動電極相向產生)所示平面支擇結構在-z方座生了〇· 046um的位移而立體支撐姓方向產斗从Λ n , 入伸、、、口構圖九（b)所不在- z 生、、勺0 · 9 4 u m的位移，由此可知# k確實右ΒΒ # μ丄i J知立體支撐結構在降低距離，因此讓結構朝3·展，可大電pfa和固接定槔的與電路整合後的價格和面積均極開關面’使其以下所示。 /、只兄爭力，設計實施例如Page 15 565530, description of the invention (10) Selectively etch Metal 4, Metal 2 and VIA2 to complete the structure as shown in Figure 7 (b). Fig. 7 (c) finally performs dry etching of r I e to remove the protective layer, thereby completing the micro switch structure shown in Fig. 7 (c). The switch structure of each of the above embodiments is that the movable electrode and the support structure are made on the same metal layer, and the support structure is placed next to the movable electrode and connected to the fixed g. Generally, this design is almost the same. When the process is more advanced, such as 1P5M structure when 0.25, 0P8M structure, more and more layers, the more expensive the unit area, so how to reduce the switching area without increasing the driving voltage considerations, The advanced process can still continue to make use of-big problem. Therefore, we designed a kind of three-dimensional branch structure switch designed for this problem by using multiple layers and structures. The top view of the three-dimensional branch switch is shown in Figure 8 & determines whether this innovative design is off and L :: 支For better performance of the building structure, we will open a second plan for the planar support structure: the simulation of the support structure switch. For these two structures, the planar support structure and the solid structure are connected to each other under the full Qi size, ^. R, support The standard, structure, and movable electrode are opposite to each other.) The plane-selective structure shown in the -z square seat has a displacement of 046um and the three-dimensional support is in the direction of the bucket from Λ n to the extension. The absent-z, the displacement of 0 · 9 4 um, from which we can know that # k 实右右 ΒΒ # μ 丄 i J knows that the three-dimensional support structure is reducing the distance, so let the structure toward the 3 · extension, can be large electric pfa and The price and area of the fixed fixed integrated circuit after integration with the circuit are extremely low and the switching surface is shown below. / 、 Brothers only compete, design and implementation examples

第16頁 565530 五、發明說明（11) [實施例四] 立體支撐結構電容式開關：此設計之特徵是將支撐結構置於可動電極上方，一般微型開關大都將支撐結構置於可動電極旁與固定埠連接，但在CMyS標準製程中尤其是較先進的製程如〇25、〇.18、 0 · 1 3等製程’面積越大代表所需費用越高，如此將使晶片製作價格大幅攀升，不利於和電路整合，因此我們將支撐結構置於可動電極上方朝3D結構發展，後製程如圖十（a)-(c)所示：圖十（a) 為透過台積電0.25 um lp5m標準製程所製作完成晶片剖面圖，設計以M e t a 1 5 ( 2 8 )作為支撐結構，Metal 4(27)及 Metal 2(25)用來做犧牲層，Metal 3 (26 )作為可動電極，Metal 5和 Metal 3間以 VIA3(32)和 Metal 4(27)相連使其電性相通，VIA 1(30) 、Metal 1(24)作為下電極（傳輸線），另外亦在保護層上開了數個洞，作為钱刻孔。圖十（b) 利用蝕刻孔進行濕蝕刻，利用不同蝕刻液的選擇性來蝕刻Metal層及VI A層，完成如圖九（b)所示結構。圖十（c ) 最後進行R I E乾蝕刻，將保護層移除，完成如圖九（c )所示微型開關結構。 [實施例五]Page 16 565530 V. Description of the invention (11) [Embodiment 4] Capacitive switch with three-dimensional support structure: The feature of this design is that the support structure is placed above the movable electrode. Generally, most micro switches place the support structure next to the movable electrode and Fixed port connection, but in the CMyS standard process, especially more advanced processes such as 〇25, 〇.18, 0 · 13 and other processes, the larger the area, the higher the cost, which will greatly increase the wafer production price. It is not conducive to circuit integration, so we place the support structure above the movable electrode and develop it into a 3D structure. The post process is shown in Figure 10 (a)-(c): Figure 10 (a) is a standard manufacturing process of 0.25 um lp5m by TSMC. The cross-section of the wafer is completed. The design uses Meta 1 5 (2 8) as the supporting structure, Metal 4 (27) and Metal 2 (25) as the sacrificial layer, Metal 3 (26) as the movable electrode, Metal 5 and Metal. Three are connected by VIA3 (32) and Metal 4 (27) to make them electrically connected. VIA 1 (30) and Metal 1 (24) are used as lower electrodes (transmission lines), and several holes are also opened in the protective layer. Cut holes as money. Fig. 10 (b) Wet etching using an etching hole, and the selectivity of different etching solutions is used to etch the Metal layer and the VI A layer to complete the structure shown in Fig. 9 (b). Fig. 10 (c) Finally, dry etching is performed on the R I E to remove the protective layer to complete the micro switch structure shown in Fig. 9 (c). [Example 5]

565530 五、發明說明（12) '^體支撐結構接觸式開關此設計之特徵是將支撐結構置於可動電極上方，完全以 CMOS#準製程中的金屬層及插銷層（VIA)組成，後製程如圖十一（a ) - ( c )所示：圖十一（a) 為透過台積電〇.25um lp5m標準製程所製作完成晶片剖面圖’設計以Metal 5(28)作為支撐結構，Metal 4(27)及 Metal 2(25)用來做犧牲層，Metal 3(26)作為可動電極，Metal 5 和 Metal 3間以 VI A3(32)和 Metal 4(27)相連使其電性相通，V I A 2 ( 3 1 )作為接觸片 VI A 1 (30)、Metal 1 (24)作為下電極（傳輸線）’另外亦在保護層上開了數個洞，作為蚀刻孔。 (b ) 利用触刻孔進行濕姓刻，利用不同餘刻液的選擇性來蝕刻Metal層及VIA層，完成如圖十一（b )所示結構。圖 + _ r x _ 丁一 C C) 最後進行r I E乾蝕刻，將保護層移除，完成如圖 + _ ，、 τ (C ) 所示微型開關結構。斜對二個開關而言封裝是一個非常關鍵的步驟，因為開關業水氣很敏感，因此要在密閉的空間中進行封裝。目前工界^用來封裝MEMS device常見的有三種方法有：分子黏劑接合（Epoxy sea 1 s ) 2 極接合（anodic bonding)565530 V. Description of the invention (12) 'Body support structure contact switch' This design feature is that the support structure is placed above the movable electrode, which is completely composed of the metal layer and the pin layer (VIA) in the CMOS # standard process. As shown in Figures 11 (a)-(c): Figure 11 (a) is a cross-sectional view of a wafer manufactured by TSMC's 0.25um lp5m standard process. The design uses Metal 5 (28) as the supporting structure and Metal 4 ( 27) and Metal 2 (25) are used as sacrificial layers. Metal 3 (26) is used as a movable electrode. Metal 5 and Metal 3 are connected by VI A3 (32) and Metal 4 (27) to make them electrically communicate. VIA 2 (3 1) as the contact piece VI A 1 (30) and Metal 1 (24) as the lower electrode (transmission line). In addition, several holes were opened in the protective layer as etching holes. (b) Wet engraving is performed using a touch hole, and the metal layer and the VIA layer are etched by using the selectivity of different remaining etching solutions to complete the structure shown in FIG. 11 (b). Figure + _ r x _ Ding Yi C C) Finally, r I E dry etching is performed to remove the protective layer to complete the micro switch structure as shown in Figure + _, τ (C). Slanting is a very critical step for the two switches. Because the switch industry is sensitive to water and gas, it must be packaged in a confined space. At present, there are three common methods used by the industry to package MEMS devices: Molecular adhesive bonding (Epoxy sea 1 s) 2-pole bonding (anodic bonding)

565530 五、發明說明（13) (3)共金接合（G〇id to gold bonding) 仁以上二種方法都有兩個主要的問題 (1) 在接合（bonding)過程中加入濕式化合物在ep〇xy、 glass、g〇 id上，會產生有機氣體在空腔中，這對開關的可靠度有嚴重的影響。 (2) 在接合（b〇nding)過程中需加熱至3〇〇〜4〇〇cc以得到較好的密封效果，但這對一般厚度只有〇. 5〜丨.5um，長度為 2 5 0 um 3 5 0 um的薄膜（membrane )或懸臂（cantilever)會產生± 1〜5um的彎曲，使開關無法使用。因此為了使開關更具有實用性我們亦利用標準製程完成一種具有自我封裝功能的開關，詳細介紹如實施例六所述。 [實施例六] 具自我封裝功能之CMOS-MEMS微型開關：主要特徵是利用CM0S的多層金屬和保護層進行自我封裝’以〇· 35製程為例，後製程如圖i2(a)-(c)所示·· 圖12(a)為透過台積電〇.35uin lp4m標準製程所製作完成晶片剖面圖，設計以M e t a 1 4 ( 2 7 )和M e t a 1 2 (25)作為犧牲層，Metal 3(26)作為可動電極，而 M e t a 1 1 ( 2 4 )和 C ο n t a c t 2 9作為 C P W傳輸線。另外亦在保護層上開了數個洞，作為蝕刻孔。圖1 2 (b )利用蝕刻孔進行濕蝕刻，此步驟只需以一種钱刻液（硫酸+雙氧水）進行，因為此蝕刻液對保護層的選擇性很好。因此可將鋁矽銅合金和鶴餘刻去除。565530 V. Description of the invention (13) (3) Gold to gold bonding There are two main problems with the above two methods. (1) Adding a wet compound to the ep during bonding On xy, glass and goid, organic gas will be generated in the cavity, which has a serious impact on the reliability of the switch. (2) In the bonding process, it needs to be heated to 300 ~ 400cc to get a better sealing effect, but this has a thickness of only 0.5 ~ 丨 .5um and a length of 2 50 The um 3 50 um film (membrane) or cantilever will produce a bend of ± 1 ~ 5um, making the switch unusable. Therefore, in order to make the switch more practical, we also use a standard process to complete a switch with a self-sealing function. The details are described in the sixth embodiment. [Embodiment 6] CMOS-MEMS micro switch with self-encapsulation function: The main feature is the self-encapsulation using multi-layer metal and protective layer of CMOS. Taking the 35 process as an example, the post process is shown in Figures i2 (a)-(c Figure 12 (a) is a cross-sectional view of a wafer manufactured by TSMC's 0.35uin lp4m standard process. The design uses Meta 1 4 (2 7) and Meta 1 2 (25) as sacrificial layers, and Metal 3 (26) as the movable electrode, and Meta 1 1 (2 4) and C ntact 2 9 as the CPW transmission line. In addition, several holes were opened in the protective layer as etching holes. Fig. 12 (b) Wet etching using an etching hole. This step only needs to be performed with an etching solution (sulfuric acid + hydrogen peroxide), because this etching solution has good selectivity to the protective layer. Therefore, the aluminum-silicon-copper alloy and the crane can be removed in a moment.

第19頁 565530 五、發明說明（14) 圖12(c)接著再沉積一層氮化石夕只有〇·64 um因此我m_^Metai 3的厚度Page 19 565530 V. Description of the invention (14) Figure 12 (c) Then deposit a layer of nitrided stone only 0.64 um, so I m_ ^ Metai 3 thickness

擇，基本上是以d沉以有多種選或PVD或旋塗等都可以，可因為主，無淪CVD 果，當然也可以因此填入特真空封裝的效 ^ ^ 符疋虱體於封閉腔體 M , ,. ea ^ /讽而要選擇金屬或非金屬以開關而吕，較佳為非金屬。使用自我封裝開關的好處是當製程進步時， ^越來越多，但一個自我封裝開關所需的層數有限而夕 ^來的金屬層我們還是可以在上面進行線路佈局，、= 成浪費，對整合元件和電子電路於 ° ^ 現的。日日片上是可以實甘以上的實施例雖然以台積電的CMOS製程為例二不僅限於此’只要為積體電路的標準製程有多；】為連接電晶體之用可使用本發明曰盥^ 電路結合在一起。佩虫開關與積體Basically, it is possible to use a variety of options, such as PVD or spin coating. However, because of the main, no CVD effect, of course, you can also fill the effect of the ultra-vacuum packaging ^ ^ 疋 lice body in the closed cavity The body M,,. Ea ^ / iron and want to choose a metal or non-metal to switch on and off, preferably non-metal. The advantage of using a self-encapsulating switch is that as the process progresses, more and more ^, but the number of layers required for a self-encapsulating switch is limited, and the metal layer can still be used for circuit layout, which is a waste. For integrated components and electronic circuits. The above examples can be used on Japanese and Japanese films. Although TSMC ’s CMOS process is used as an example, the second example is not limited to this. As long as there are many standard processes for integrated circuits; the circuit of the present invention can be used to connect transistors. integrate. Insect Switch and Buildup

565530 圖式簡單說明圖一 lp4m標準製程剖面圖圖二 lp5m標準製程剖面圖圖三金屬接觸式開關結構圖四電容式開關圖五實施例一電容式開關製程示意圖圖六實施例二金屬接觸式開關製程示意圖圖七實施例三金屬接觸式開關製程示意圖圖八立體支撐結構上視圖圖九模擬比較圖565530 Brief description of the diagram Figure 1 lp4m standard process cross-sectional view Figure 2 lp5m standard process cross-sectional view Figure three metal contact switch structure diagram four capacitive switch diagram fifth embodiment one capacitive switch process schematic diagram six embodiment two metal contact switch Schematic diagram of the process Figure 7 Schematic diagram of the third embodiment of the metal contact switch Fig. 8 Top view of the three-dimensional support structure Fig. 9 Simulation comparison diagram

圖十實施例四立體支撐結構電容開關製程示意圖圖十一實施例五立體支撐結構接觸式開關製程示意圖圖十二實施例六具自我封裝功能的微型開關Figure 10 Schematic diagram of the three-dimensional support structure capacitive switch manufacturing process of the fourth embodiment Figure XI Schematic diagram of the three-dimensional support structure contact switch manufacturing process of the fifth embodiment Figure twelfth embodiment of the micro switch with self-encapsulation function

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Claims

565530 六、申請專利範圍 1 · 一種以積體電路標.準製程並經丨製作的接觸式微型開闕，直主要，電（mems)技術後製程 ---半導體材料基板，.於Λ搞之卜λ徵包括： I號傳輸線、固定埠，所二d:於斷開的訊 |屬層、插銷層、接觸層(cont ,:;及其以下的金 I加；夕日日石夕（P〇ly35)多層疊 ——可動電極置於下電極之上， :片，以支撐結構將所謂的ϋ定埠*v動電m有接觸一懸空的起始間隔，所謂的可動;^ = ±並與下電極維持一層金屬做為電鍍層，加疋由積體電路的最上丨二金屬層來構成：：此=層與最上倒數第極與下電極間的厚度，所 ς =縮小了可動電銷層構成，所謂的支撐社槿θ J ΐ則由最上倒數第二插 f構成’所謂的懸空起始間隔：金屬成，作為犧牲層於後製程以濕幻數苐二金屬層構 …所謂的固定蟑、支樓結構掏工’ =但與接觸片無電性相關連，當m極，其電^相極與下電極時，可動電極受靜電力二，差於可動電生位移，而接觸片亦向下〜響而向下電極方向產傳輸線，使其導通。 4方向產生位移，貝占上斷開的開關，其中 2.依據申請專利範圍第1項所述的接觸式微型第22頁 565530 六、申請專利範圍 |所謂的半導體材料基板可為矽（Si)、砷化鎵（GaAs)、矽鍺 CSiGe)、S0I(Siiic〇n 〇n insuiat〇r)等具有半導體特性的基板者。 3 ·依據申請專利範圍第1項所述的接觸式微型開關，其中 |所謂的可動電極可為經過電鍍替換成他種材料者。 4 ·依據申叫專利範圍第丨項所述的接觸式微型開關，其中所α的後製耘乃由蝕刻孔進行濕蝕刻，將最上一層金屬的紹矽銅合金蝕刻掉，留下金屬鈦，如此會得到一^空腔，再以鈦為晶種層（seeding layer)電鍍，由於鈦金屬下方 :任=生長工間，上方有二氧化矽及氮化矽所組成的保護 I曰，此電鍍金屬將無法往上或往下生長，電鍍金屬將被 I: : 長ί :腔内’猶如一三明治，㈤此可將電鍍厚度嚴格控，，接者以電鍍後的可動電極做為反 (RIE)的钱刻遮罩，開出餘刻孔，再以濕钱刻方式，逐層丨：了蝕刻最後達到懸浮結構的釋放，完成微型開關之製 5 ·—種以積體電路標準製程並經微 M ^ ^ ^ ^ ^ ^ ^ 丨製作的接觸式微型開關，其主要特徵包括··财後裏私 --半導體材料基板，於美你 1^於基板之上形成下電極、斷開的訊號，輸線、固疋埠，所謂的CPW傳輸金屬層、最上倒數第三插銷層，及;數第四 i層、接觸層（咖29)、w(P〇Iy35)多層叠ί 劫 ιΓ可以動Λ極二於/電極之上’可動電極並連接有接觸丨片，乂支撐，，Ό構將所謂的固定埠與可動電極連接，如此可第23頁 565530 六、申請專利範圍動電極將藉由支撐結構連結於固定埠上，芯二的起始間隔，所謂的可動電極是由積體 2 構】金屬’加上最上-層插銷層與最上倒數第構成，如此增加可動電極厚度而縮小了可動電極盥: :的厚度’所謂的接觸片則由最上倒數第二插銷層極 :::支樓結構是由積體電路的最上一層金屬來構明的懸空起始間隔則由最上倒數第三金屬層構成，作j 牲層於後製程以㈣刻㈣，為使最上倒數第三 ^ 以以濕則㈣，並且*影響到可動電極與下電極，二了倒數第三金屬層設置蝕刻孔，可以藉由 :金屬最增第二金屬層、最上-層插銷==2 一一-所謂的固定埠、支撐結構、盥連，但與接觸片無電性相關連，當施以一 ’，、電性相極與下電極時，可動電極受靜電； =壓差於可動電生位移，而接觸片亦向下電極；下電極方向產傳輸線，使其導通。產生位移’貼上斷開的第5項所述的接觸式微型開關，其中 :明的後製程乃由在保護層上開了數 . 最上-屏金m j 敍刻液的選擇性來敍刻匕：ϊ 層插銷層、最上倒數第二金屬層、 ϊϊϊ插銷層’直至掏空最上倒數第三金屬層，使 λ下電極分隔—㈣，最後進行反應性離子敍刻 (RIE)乾飯刻，將保護層移除，完成微型565530 6. Scope of patent application1. A contact type micro switch with integrated circuit standard and quasi-manufacturing process, which is made directly after the main, electrical (mems) technology process --- semiconductor material substrate. The λ sign includes: No. I transmission line, fixed port, so d: the disconnected signal | the layer, the pin layer, the contact layer (cont,:; and the following gold I plus; Xixi Rishixi (P〇 ly35) Multi-layered-the movable electrode is placed on the lower electrode, a sheet, which supports the so-called Luding port * v motor m with a dangling initial interval, the so-called movable; ^ = ± and with The lower electrode maintains a layer of metal as a plating layer, and the upper layer is composed of the top two metal layers of the integrated circuit :: This = the thickness between the layer and the bottom-most electrode and the bottom electrode, so = reduces the movable electric pin layer Structure, the so-called support society θ J ΐ is composed of the penultimate top f, the so-called suspended initial interval: metal, as a sacrificial layer in the later process with a wet magic number 苐 two metal layer structure ... the so-called fixed cock 、 The structure of the branch building is cut off '= but it is related to the non-electricity of the contact piece. When m When the electric pole and the lower electrode are connected, the movable electrode is subjected to electrostatic force, which is worse than the displacement of the movable electrode, and the contact piece also goes down to the ring, and a transmission line is generated in the direction of the downward electrode to make it conductive. , Beizhan on the open switch, which 2. According to the contact miniature described in the first scope of the patent application page 22 565530 Sixth, the scope of the patent application | the so-called semiconductor material substrate can be silicon (Si), gallium arsenide (GaAs), silicon germanium (CSiGe), S0I (Siiic Onn Insuiat), and other substrates with semiconductor characteristics. 3 · According to the contact type micro switch described in the first item of the scope of the patent application, the so-called movable electrode can be replaced with another material by electroplating. 4 · According to the contact type micro switch described in the scope of the patent application, the post-processing of α is performed by wet etching through an etching hole, and the top layer of silicon-silicon-copper alloy is etched away, leaving titanium metal, In this way, a cavity is obtained, and then titanium is used as a seeding layer for electroplating. Since the bottom of the titanium metal: Ren = growth workshop, there is a protection composed of silicon dioxide and silicon nitride. The metal will not grow up or down, and the electroplated metal will be I:: long ί: in the cavity, like a sandwich, so the thickness of the plating can be strictly controlled, and the movable electrode after plating is used as a counter (RIE ) Money mask, open the remaining holes, and then use wet money to engraving layer by layer 丨: the etching finally achieves the release of the floating structure, completing the micro switch system 5 · a kind of integrated circuit standard process and after Micro M ^ ^ ^ ^ ^ ^ ^ 丨 contact micro switch made, its main characteristics include · · Caihouli private-semiconductor material substrate, Yu Mei 1 1 on the substrate to form a lower electrode, disconnected signal , Transmission line, fixed port, so-called CPW transmission metal layer The third-to-last pin layer, and the fourth-to-i layer, contact layer (Ca 29), w (POIy35) are stacked in multiple layers. 劫 ΓΓ can move Λ pole two above / electrode 'and move the electrode and contact it.丨 The film, the support, and the structure connect the so-called fixed port with the movable electrode, so that it can be page 565530. 6. The scope of the patent application The moving electrode will be connected to the fixed port through the support structure. The so-called movable electrode is made up of 2 pieces] metal 'plus the top-most pin layer and the penultimate end. This increases the thickness of the movable electrode and reduces the thickness of the movable electrode. The thickness of the so-called contact sheet is from the top to the bottom. The second latch pin pole ::: The structure of the branch building is constructed by the uppermost metal layer of the integrated circuit, and the initial starting interval is composed of the third lowest metal layer, which is used as the last layer to engrav the seal. In order to make the last penultimate ^ to be wet, and * affect the movable electrode and the lower electrode, the second to third metal layer is provided with an etching hole. The metal can be added to the second metal layer and the upper-layer plug. == 2 one one-so-called fixed The port, support structure, and toilet are connected to the contact sheet without electricity. When a single electrode is applied to the lower electrode, the movable electrode is electrostatically charged; The lower electrode also produces a transmission line in the direction of the lower electrode to make it conductive. "Displacement" paste the disconnected contact micro-switch as described in item 5, where: the post-production process is made by opening on the protective layer. Top-Screen gold mj Selective liquid to select the dagger : Ϊ layer plug layer, top-last metal layer, ϊϊϊ pin layer 'until the top-down third metal layer is hollowed out, separating the electrodes below λ—㈣, and finally performing reactive ion engraving (RIE) dry rice engraving, which will protect Layers removed, complete micro

Hi 第24頁 565530 六、申請專利範圍 7· —種以積體電路標準製程並經微機電（mem |製作的電容式微型開關，其主要特徵包括：技忻後製私 I一—半導體材料基板，於基板之上形成傳輸線、固定埠、下電極，傳輸線上並設置一介電> k你丨螌篦一令属展*播上尾屬所明的下電極可以最上倒數第二金屬層來構成，固定埠則層、最上倒數第二插銷層，及其以上的金屬:數 |所形成；倒數苐二插銷層的介電層 -可動電極置於下電極之上，以*捧从β 埠與可動電極連接，如此可動構將所謂的固定 |固定谭上，並與下電極維持樓結構連結於極是由積體電路的最上—芦、起始間隔，所謂的可丨結構是由積體電路的最上_層：屬成，戶斤謂的支撐始間隔則由最上倒數第二金屬：冓士，所謂的懸空起程以濕蝕刻掏空’為使最上倒^ _ 為犧牲層於後製掏空，並且不影響到可動 3二金屬層可以以濕#刻屬廣設置#刻孔，可以藉^:下電極，最上倒數第二金 \%M ； “最上-層插銷層連接至最上一 -所謂的固定埠、支撐結槿、連；當施以一電壓差於可動電極〃可動電極，其電性相受靜電力影響而向傳輸線方向著/、傳輸線時，可動電極將極間隔介電層而產生電容I：且^ 生位移，傳輸線與可動電 8·依據申請專利範圍第7項=々號通過。所謂的半導體材料基板可為败的電谷式微型開關，其中石（Sl)、砷化鎵（GaAs)、矽鍺第25頁 565530 六、申請專利範圍 (SiGe)、SOKsilicon on insulator)等具有半導體特性的基板者。 9.依據申請專利範圍第7項所述的電容式微型開關，直中所謂的後製程乃由最上方的保護層開洞作為蝕刻孔/利用餘刻孔將犧牲層即最上倒數第二金屬層蝕刻掉，利用蝕刻液的高選擇性將最上倒數第二插銷層的材料敍刻除去，留下最上倒數第三金屬層之上的介電層，最後以rie乾蝕刻方式將可動電極上方的保護層除去’如此完成可動電極懸洋結構之釋放，完成開關之結構。 10· —種以積體電路標準製程並經微機電（MEMs)技術程製作的電容式微型開關，其主要特徵包括：一一-半導體材料基板，於基板之上形成傳輸線、固 :電極，所謂的下電極可以最上倒數第四插銷層鱼 =構成，固定埠則由最上第一金屬層、最上倒數第二上其以上的金屬層、插銷層多層疊加；所謂的；電層疋最上倒數第三插銷層的介電層所形成；曰极―可動電極置於傳輸線之上，而支撐結構則置於雷接之i此屬層（metal)及插銷層（via)與可動電極相連 b可動電極將藉由支撐結構連結於固定埠上，廿金雷ί Ϊ維持—懸空的起始間隔；所謂的可動電極是由積i =最上倒數第三金屬層構成，所謂的支撑結；= 最上倒數= 來構成，所謂的懸空起始間隔則由掏空，If:金屬層構成，作為犧牲層於後製程以濕蝕刻两便最上倒數第四金屬層可以濕蝕刻掏空，並且不Hi Page 24 565530 6. Scope of patent application 7 · A kind of capacitive micro-switch based on integrated circuit standard process and manufactured by micro-electromechanical (mem |), its main features include: technology after manufacturing private I-semiconductor material substrate A transmission line, a fixed port, and a lower electrode are formed on the substrate, and a dielectric is provided on the transmission line.> You can order the lower electrode. The lower electrode can be composed of the second to last metal layer. , The fixed port layer, the penultimate pin layer at the top, and the above metal: number | are formed; the dielectric layer of the penultimate pin layer-the movable electrode is placed on the lower electrode, and The movable electrode is connected, so that the movable structure connects the so-called fixed | fixed Tan and the lower electrode to maintain the structure. The pole is the uppermost part of the integrated circuit-Lu, the initial interval. The so-called movable structure is the integrated circuit. The top _ layer: belongs to, the support interval of the household weight is the second to last metal: 冓士, the so-called suspended start is hollowed out by wet etching 'to make the top down _ _ is to sacrifice the layer to post-empty And does not affect To the movable metal layer, you can use the wet # 刻属广 Set # notch hole, you can borrow ^: the lower electrode, the penultimate gold \% M; "the top-the pin layer is connected to the top-the so-called fixed port, Support the connection and connection; when a voltage difference is applied between the movable electrode and the movable electrode, the electrical phase of the movable electrode is directed toward the transmission line by the influence of the electrostatic force, and the movable electrode separates the electrodes from the dielectric layer to generate a capacitance I: And the displacement occurs, the transmission line and the movable electricity are passed according to item 7 of the patent application scope = No. 々. The so-called semiconductor material substrate can be a defeated electric valley-type micro switch, of which stone (Sl), gallium arsenide (GaAs) Silicon germanium, page 25, 565530 6. Those who have substrates with semiconductor characteristics, such as patent scope (SiGe), SOKsilicon on insulator, etc. 9. According to the capacitive miniature switch described in item 7 of the scope of patent application, the so-called In the manufacturing process, the uppermost protective layer is used as an etching hole. The sacrificial layer, which is the penultimate metal layer, is etched away by using the remaining holes. The material of the penultimate pin layer is etched away using the high selectivity of the etching solution. , Leaving the dielectric layer above the third-to-last metal layer, and finally removing the protective layer above the movable electrode by rie dry etching, so as to complete the release of the movable electrode suspension structure and complete the switch structure. 10 · —kind Capacitive micro-switches manufactured using integrated circuit standard processes and manufactured using micro-electromechanical (MEMs) technology include the following main features:-a semiconductor material substrate on which transmission lines and solid electrodes are formed; the so-called lower electrode can The uppermost penultimate pin layer is composed of fish, and the fixed port is a multi-layer stack of the uppermost metal layer, the uppermost penultimate metal layer, and the pin layer; the so-called; the electrical layer and the third-most interposer layer. The electric layer is formed; the pole-the movable electrode is placed on the transmission line, and the support structure is placed on the lightning connection. The metal layer and the via layer are connected to the movable electrode. The movable electrode will be supported by the support structure. Connected to a fixed port, 廿金雷 ί Ϊmaintains a dangling initial interval; the so-called movable electrode is composed of a product i = the third-to-last metal layer, the so-called support junction = = The reciprocal of the uppermost constituted, starting intervals by a so-called floating emptied, If: metal layer, as a sacrificial layer by wet etching process after the two uppermost will be the inverse of the fourth metal layer wet etching emptied, and does not

第26頁 565530 六、申請專利範圍影響到可動電極與下電極，最上倒數第二與第四金屬層設置#刻孔’可以藉由最上倒數第三與第一層插·銷層連接至最上一層金屬； —所謂的固定埠、支撐結構、與可動電極，其電性相連；當施以一電壓差於可動電極與傳輸線時，可動電極將受靜電力影響而向傳輸線方向產生位移，傳輸線與可動電極間隔介電層而產生電容阻止訊號通過。 1 1 ·依據申請專利範圍第1 〇項所述的電容式微型開關，其中所謂的半導體材料基板可為矽（Si)、砷化鎵（GaAs)、石夕鍺（SiGe)、S0I(silic〇n 〇rl insulator)等具有半導體特性的基板者。 1 2 ·依據申請專利範圍第丨〇項所述的電容式微型開關，其中所謂的後製程乃由設計以最上一層金屬作為支撐結構，最上倒數第二金屬層及最上倒數第四金屬層用來做犧牲層，最上倒數第三金屬層作為可動電極，最上一層金屬和最上倒數第三金屬層間以最上倒教第一插銷層、最上倒數第一金屬層和最上倒數第二插銷層相連使其電性相通，利】蝕刻孔進行濕蝕刻，利用不同蝕刻液的選擇性來蝕刻金 θ及插銷層，元成掏空最上倒數第二金屬層及最上倒數 φ :金屬層，最後進行R I E乾蝕刻，將保護層移除，完成電容式微型開關。你咏兀风 i3路;種進具:Α封襞功能的微型開關，其特徵為利用積‘ 的金屬屬層作為姓刻孔道：，為作為可動電 "、、下電極的金屬層皆被一氧化；6夕所保護住Page 26 565530 6. The scope of the patent application affects the movable electrode and the lower electrode. The topmost penultimate and fourth metal layers are provided with #etch holes', which can be connected to the uppermost layer by the third most penultimate and first pin and pin layers. Metal;-the so-called fixed port, supporting structure, and the movable electrode, which are electrically connected; when a voltage difference is applied between the movable electrode and the transmission line, the movable electrode will be affected by the electrostatic force to cause a displacement in the direction of the transmission line. The electrodes create a capacitance between the dielectric layers to prevent the signal from passing through. 1 1 · According to the capacitive micro-switch according to Item 10 of the scope of the patent application, the so-called semiconductor material substrate may be silicon (Si), gallium arsenide (GaAs), silicon germanium (SiGe), SOI (silic). n 〇rl insulator) and other substrates with semiconductor characteristics. 1 2 · According to the capacitive micro switch described in the scope of the patent application, the so-called post-process is designed with the top metal layer as the supporting structure, the top second metal layer and the top fourth metal layer. As the sacrificial layer, the third-to-last metal layer is used as a movable electrode. The top-to-last metal layer and the third-to-last metal layer are connected to the first-to-last pin layer, the first-to-last metal layer, and the second-to-last pin layer to connect them for electrical connection. It ’s easy to use] Wet etching of the etched holes, using the selectivity of different etching solutions to etch the gold θ and the pin layer. Yuancheng hollows out the top-last metal layer and top-down φ: metal layer, and finally performs RIE dry etching. Remove the protective layer to complete the capacitive miniature switch. You yongwu i3 road; a kind of miniature switch with Α seal function, which is characterized by the use of the metal layer of the product as the last engraved channel: for the use of mobile electricity ", the metal layer of the lower electrode are Oxidized

第27頁 565530 六、申請專利範圍 . 因此在濕蝕刻時可以被留下來，接著進行沉積的動作，利用沉積物將原本的蝕刻孔道給填補起來，使内部為一封閉空間。 1 4 .依據申請專利範圍第1 3項所述具自我封裝功能的微型開關，其將蝕刻孔道填補所沉積的材料可以是低溫沉積的非金屬或金屬者。 1 5 .依據申請專利範圍第1 3項所述具自我封裝功能的微型開關，其中所謂的封閉空間可因沉積方法的選擇，而有真空封裝的效果，或因此填入特定氣體的效果。Page 27 565530 6. Scope of patent application. Therefore, it can be left behind during wet etching and then be deposited. The original etched holes can be filled up with the sediment to make the interior a closed space. 14. According to the micro switch with self-sealing function described in item 13 of the scope of the patent application, the material deposited by filling the etching holes may be a non-metal or metal deposited at a low temperature. 15. According to the micro switch with self-sealing function described in Item 13 of the scope of the patent application, the so-called closed space can have the effect of vacuum encapsulation or the effect of filling a specific gas due to the choice of the deposition method.

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