TW555830B - Method for producing electroluminescent element - Google Patents
Method for producing electroluminescent element Download PDFInfo
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- TW555830B TW555830B TW090123579A TW90123579A TW555830B TW 555830 B TW555830 B TW 555830B TW 090123579 A TW090123579 A TW 090123579A TW 90123579 A TW90123579 A TW 90123579A TW 555830 B TW555830 B TW 555830B
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- light
- layer
- emitting
- photoresist
- emitting layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 92
- 238000000206 photolithography Methods 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 633
- 229920002120 photoresistant polymer Polymers 0.000 claims description 196
- 239000000463 material Substances 0.000 claims description 118
- 239000002904 solvent Substances 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 84
- 238000000059 patterning Methods 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 24
- 230000005684 electric field Effects 0.000 claims description 22
- 238000007639 printing Methods 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000003086 colorant Substances 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 5
- 230000003139 buffering effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000002981 blocking agent Substances 0.000 claims 2
- 239000011229 interlayer Substances 0.000 claims 1
- 238000010248 power generation Methods 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 230000005612 types of electricity Effects 0.000 claims 1
- 230000007261 regionalization Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 75
- 239000010408 film Substances 0.000 description 71
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 39
- 238000000576 coating method Methods 0.000 description 34
- 239000011248 coating agent Substances 0.000 description 32
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 239000007788 liquid Substances 0.000 description 20
- 238000002156 mixing Methods 0.000 description 14
- -1 Lewis acid hydrazone Chemical class 0.000 description 12
- 238000004020 luminiscence type Methods 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 11
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 10
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 239000008096 xylene Substances 0.000 description 9
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 7
- 239000004698 Polyethylene Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 239000003973 paint Substances 0.000 description 7
- 229920000573 polyethylene Polymers 0.000 description 7
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 229920002098 polyfluorene Polymers 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 3
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229920000767 polyaniline Chemical class 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 2
- 150000003577 thiophenes Chemical class 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical compound C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- LVCJZVGIIMAVDI-UHFFFAOYSA-N 1-benzyl-2-butylbenzene Chemical compound CCCCC1=CC=CC=C1CC1=CC=CC=C1 LVCJZVGIIMAVDI-UHFFFAOYSA-N 0.000 description 1
- DWYHDSLIWMUSOO-UHFFFAOYSA-N 2-phenyl-1h-benzimidazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2N1 DWYHDSLIWMUSOO-UHFFFAOYSA-N 0.000 description 1
- FKQSHOPJLLGPCL-UHFFFAOYSA-N 9H-fluorene propane-1,2-diol Chemical compound C(C(C)O)O.C1=CC=CC=2C3=CC=CC=C3CC12 FKQSHOPJLLGPCL-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XDACLRJRJBFXJD-UHFFFAOYSA-N C(=CC1=CC=CC=C1)C1=CC=CC=C1.C1=CC=CC=C1 Chemical class C(=CC1=CC=CC=C1)C1=CC=CC=C1.C1=CC=CC=C1 XDACLRJRJBFXJD-UHFFFAOYSA-N 0.000 description 1
- ROQQVXZKKHRRMW-UHFFFAOYSA-N COCC(C)O.C(CO)O Chemical compound COCC(C)O.C(CO)O ROQQVXZKKHRRMW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000220284 Crassulaceae Species 0.000 description 1
- 206010013082 Discomfort Diseases 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 101100422538 Escherichia coli sat-2 gene Proteins 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- 235000005206 Hibiscus Nutrition 0.000 description 1
- 235000007185 Hibiscus lunariifolius Nutrition 0.000 description 1
- 244000284380 Hibiscus rosa sinensis Species 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 240000009023 Myrrhis odorata Species 0.000 description 1
- 235000007265 Myrrhis odorata Nutrition 0.000 description 1
- 241000237536 Mytilus edulis Species 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 244000273256 Phragmites communis Species 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 235000012550 Pimpinella anisum Nutrition 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical class C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 206010046996 Varicose vein Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FZEYVTFCMJSGMP-UHFFFAOYSA-N acridone Chemical class C1=CC=C2C(=O)C3=CC=CC=C3NC2=C1 FZEYVTFCMJSGMP-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000002490 anilino group Chemical class [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- YFNONBGXNFCTMM-UHFFFAOYSA-N butoxybenzene Chemical compound CCCCOC1=CC=CC=C1 YFNONBGXNFCTMM-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- HRYZWHHZPQKTII-UHFFFAOYSA-N chloroethane Chemical compound CCCl HRYZWHHZPQKTII-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 230000003779 hair growth Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical class [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 125000006178 methyl benzyl group Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 235000020638 mussel Nutrition 0.000 description 1
- VMGAPWLDMVPYIA-HIDZBRGKSA-N n'-amino-n-iminomethanimidamide Chemical compound N\N=C\N=N VMGAPWLDMVPYIA-HIDZBRGKSA-N 0.000 description 1
- KKTBUCVHSCATGB-UHFFFAOYSA-N n-methylcyclopentanamine Chemical class CNC1CCCC1 KKTBUCVHSCATGB-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical class CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- BOLDJAUMGUJJKM-LSDHHAIUSA-N renifolin D Natural products CC(=C)[C@@H]1Cc2c(O)c(O)ccc2[C@H]1CC(=O)c3ccc(O)cc3O BOLDJAUMGUJJKM-LSDHHAIUSA-N 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 210000003296 saliva Anatomy 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 210000000952 spleen Anatomy 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 208000027185 varicose disease Diseases 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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Abstract
Description
555830 五、發明說明(1) 【發明之詳細說明】 【發明所屬之技術領域】 本發明為關於形成圖型之電場發光元件(以下簡稱為EL) 元件之製造方法。 【先前之技術】 EL元件為經由來自對向電極所注入之空穴及電子為於發 光層内結合,並以此能量激起發光層中的螢光物質,進行 對應於螢光物質顏色的發光,並且以自發光之面狀顯示元 件型式受到注目。其中,使用有機物質做為發光材料的有 機薄膜EL顯示器’即使外加電壓為弱至1 〇v,亦可實現高 亮度之發光,其發光效率為高,且可為單純的元件構造進 行發光’並且被期待應用於發光顯示出特定圖型廣告等之 低價的簡易顯示裝置。 、 么於製造使用此類EL元件之顯示器時,通常將電極層和有 械EL層予以圖型化。此EL元件的圖型化方法可為透過投影 1罩將發光材料殿積之方法、以噴墨進行塗覆之方法、以 备、外線照射將特定之發光色素予以破壞之方法、篩板印刷 f等二但,,此些方法並無法提供可實現發光效率和光之 ^出效率高、製造工程簡便和形成高精細圖型的EL元件。 【本發明所欲解決之課題】 十明為鑑於上述情事,以提供可實現發光效率和抽出 政率南、製造工程簡便和形成高精細圖型之£[元件之製造 方法為其主要目的。 【用以解決課題之手段】555830 V. Description of the invention (1) [Detailed description of the invention] [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a patterned electric field light emitting element (hereinafter referred to as EL) element. [Previous technology] The EL element is combined in the light-emitting layer through holes and electrons injected from the counter electrode, and the energy of the fluorescent substance in the light-emitting layer is excited by this energy, and the light is emitted according to the color of the fluorescent substance. , And attracted attention as a self-luminous planar display element type. Among them, organic thin film EL displays using organic substances as light-emitting materials 'even if the applied voltage is as weak as 10v, high-brightness light emission can be achieved, the light-emitting efficiency is high, and light can be emitted for a simple element structure' and It is expected to be applied to a simple and inexpensive display device that emits a specific graphic advertisement or the like. When manufacturing a display using such an EL element, the electrode layer and the mechanical EL layer are usually patterned. The patterning method of this EL element can be a method of depositing a luminescent material through a projection 1 cover, a method of coating with inkjet, a method of preparing, destroying a specific luminescent pigment by external irradiation, and screen printing f Second, however, these methods cannot provide EL elements that can achieve high luminous efficiency and high light output efficiency, simple manufacturing processes, and high-definition patterns. [Problems to be Solved by the Invention] In view of the foregoing, Shiming aims to provide a manufacturing method of components that can realize luminous efficiency and extraction efficiency, simplify manufacturing processes, and form high-definition patterns. [Means to solve the problem]
555830 五、發明說明(2) 一 ^的目的,本發明為提供令構成EL 件之 徵故元件的製造方法。 卩刷去予以圖型化為其特 一 f根據本發明之EL元件的製造方法 曰”機EL層為經由光學平版印刷法予 :之至少 #1因:先前所進行之以澱積予以圖型化之方法:而取 =為:需要具備高精確度定線備J比較, 較為麵易且廉價地一二叹備寺,故 式之圖型化法相比較,則因為二與使用噴墨方 =和基體進行前處理故為:不=:;;=型化之構 確度之關係而言, =墨磁頭之吐出精 造方* 1 ,若根據本發明之以元件 於上述發明;為=廉價地取得高精細之EL元件。、 形成的有機E L声以j Ϊ ^學平版印刷法予以圖型化所 為必須之層,且於於止士 u马於EL凡件中,發光層 又,於上m ^ s先叫可取得必要的高精細圖型。 顯像液m::勿中’上述發光層於光阻物溶劑、光阻物 述發光層所用之、'二:液中為不溶,ι ’光阻物於形成上 乾式蝕刻之方法H為不溶ί佳。例如’雖然根據使用 刷法之種類而里, 用乾式溥膜之方法等之光學平版印 中’較佳使用。ί於使用一般之濕式光學平版印刷法 =用滿足此類要件的發光層及光阻物。 R , tov 1- 、+、八 v 經過數回之光二^,中,上述發光層以不同種類之發光層 于十版印刷法予以形成發光層為佳。因為經 mi 90123579.ptd 第5頁 555830555830 V. Description of the invention (2) The purpose of the present invention is to provide a method for manufacturing a malfunctioning element constituting an EL element.卩 Brush to pattern it as a special feature. The manufacturing method of the EL element according to the present invention is "the machine EL layer is obtained by optical lithography: at least # 1 due to: previously patterned by deposition The method of transformation: and take ==: need to have a high-precision alignment to prepare J comparison, it is relatively easy and cheap to compare Biji Temple, so the comparison of the graphical method of the formula, because two and the use of inkjet method = Pre-processing with the substrate is therefore not related to: == ;;; = In terms of the structured accuracy of the type, = the ejection and refining method of the ink head * 1, if the element according to the present invention is based on the above invention; Obtain a high-definition EL element. The organic EL sound is a layer necessary for patterning by the method of lithography, and it is used in EL elements, the light-emitting layer, and the upper layer. ^ First call s to obtain the necessary high-definition pattern. Developer m :: Don't use the above light-emitting layer in photoresist solvent, photoresist light-emitting layer, 'two: insoluble in liquid, ι' The method of dry etching on the photoresist is preferably insoluble. For example, 'Although it depends on the type of the brush method used, In optical lithography using a dry film method, it is better to use. Generally used in wet optical lithography = using a light-emitting layer and a photoresist that meet such requirements. R, tov 1-, + , Eight v After several times of light two ^, In the above light-emitting layer, it is better to form a light-emitting layer with a different type of light-emitting layer in the tenth printing method. Because the mi 90123579.ptd page 5 555830
由令發光層作成不同種類之數種發光層,例如,若選擇 紅、綠及藍等,則可使其全色彩化。 此時,形成第2回以後之上述發光層的發光層形成用溶 劑,、較佳為對於已形成的發光層為呈貧溶劑。因為此類新 形成發光層中所用之發光層形成用溶劑,對於已形成之發 光層為呈貧溶劑,故在已形成之發光層上再形成發光層 時’不會產生混色。 此%,形成第2回以後發光層之發光層形成用溶劑,相 對於已形成發光層之溶解度以25°c、1氣壓中,為〇1克/ 克溶劑以下為佳。若為此程度之溶解度,則即使於已形成 之發光層上形成新的發光層時,亦不會令已形 被溶劑溶出、發生混色。 X曰 又’上述經過數回所形成之發光層的形成順序,亦以上 迷务光層所得之光波長為由短波長者開始依序形成為佳。 身又,將能$咼之短波長發光材料、與能量低之長波長 發光材料之二種發光材料予以混合時,乃以來自長波長發 光材料之發光為主。於本發明中,因為發光之光波長為由 紅波長者開始依序形成,故其後所形成之發光層的發光材 料為呈長波長的發光材料,即使於其後所形成之發光層中 現合先前所形成之發光層的發光材料時,所混入之先前形丨_ 成的短波長發光材料幾乎不會發光,且令成為混色等問題 之可能性極為降低。 如此,經過數回形成發光層時,上述發光層為發出紅、 綠及藍光三種發光層為佳。因為以全色彩發光上,通常以The light-emitting layer is made into several kinds of light-emitting layers of different types. For example, if red, green, and blue are selected, they can be fully colored. In this case, the light-emitting layer-forming solvent for forming the light-emitting layer described above after the second pass is preferably a poor solvent for the light-emitting layer that has been formed. Since the light-emitting layer forming solvent used in such a newly formed light-emitting layer is a poor solvent for the light-emitting layer that has been formed, no color mixing will occur when the light-emitting layer is further formed on the light-emitting layer that has been formed. At this%, the solvent for forming a light-emitting layer that forms the light-emitting layer after the second round is preferable to have a solubility of 25 g at a pressure of 1 g / g solvent or less at 25 ° c and 1 atm. With this degree of solubility, even when a new light-emitting layer is formed on an already-formed light-emitting layer, the already-formed solvent will not be dissolved out and color mixing will not occur. X is the same as the order of formation of the light-emitting layer formed through the above-mentioned several times, and it is preferable that the light wavelengths obtained by the above-mentioned light-emitting layer are sequentially formed from those with a short wavelength. In addition, when mixing two kinds of light-emitting materials with a short-wavelength light-emitting material capable of low energy and a long-wavelength light-emitting material with low energy, the light emitted from the long-wavelength light-emitting material is mainly used. In the present invention, since the wavelength of the light emitted is sequentially formed from those with a red wavelength, the light-emitting material of the light-emitting layer formed thereafter is a light-emitting material with a long wavelength, even in the light-emitting layer formed thereafter. When combined with the previously formed luminescent material of the luminescent layer, the previously formed short-wavelength luminescent material mixed in will hardly emit light, and the possibility of problems such as color mixing is extremely reduced. In this way, when the light-emitting layer is formed several times, it is preferable that the light-emitting layer emits three kinds of light-emitting layers of red, green, and blue light. Because it glows in full color, it usually starts with
9〇123S7q 第6頁 以圖型化 如上述將 ,但並非 衝層予以 之EL元件 層為佳。 製造廉價 液中為不 為不溶為 刷法之種 中,必須 發光層所 用之溶劑 溶劑、光 使用於形 且形成者 之EL元件 以光學平 滿足上述 化,為經 五、發明說明(4) 紅又綠^及藍之三原色發光為佳。 所形成Μ ί ^明中,上述使用光學平版印刷法予 听化成的有機EL層亦可為 丁 " 發光層予以圖型化時較佳為;】:於本發明中’ 特別限定於此,且亦可使用光學平版印刷法 中,於發光效左方ί ί ί 有機高分子所形成 此時以光學平:印刷法;兩::::衝層和發光 且高品質的EL元件。 予以圖型化,則可 此時,上述緩衝層於光阻 j,且’光阻物於形成上述緩阻物剝離 佳。同上述發光層之情況,=層所用之溶劑中 L而異,但於全部以濕式進行學平版印 滿足上述要件。 之忐子平版印刷法 更且,令光阻物溶劑、光 用之溶劑中不溶之緩 4離液、及形成 中不溶的光阻物予以圖』化且=形成緩衝層所 :t顯像液、及光阻物剝離液中’將光阻物 ::光層所用之溶劑中不且::發光層, 广如上述,於發 ;:以圖型化 t,將緩衝層與發光層組合為I城π分子所形成 版印刷法形成滿足上述要件的 且此時,首先 要件之發光層之方法為佳。、’”層’其次形成 於本發明中,上述使 十版印刷法之圖型 i \\326\2d-\90-ll\90123579.ptd 第7頁 555830 五、發明說明(5) 由在圖型化之有機EL層上將光阻物予以冷 現’使得光阻物圖型化後,使用乾:广::、顯 分之有機EL層予以除去、圖型化亦^。相除去光阻物部 高有機EL層予以乾式#刻之方法,則可形成更 此日守,上述乾式蝕刻以反應性離子蝕列A # 、 離子银刻,則可有效進行有舰層的=為L。以反應性 又,於上述乾式蝕刻中,較佳使用邱 二Ϊ用氧氣單體或含氧之氣體,則不氣 ::大氣壓等離子體Ί ΐ: i ϊ二子體::。 的圖型化。 且1進仃尚生產性 為經由:i;::右土述使用光學平版印刷法之圖型化, 顯像,使得光阻物機孔層上將光阻物予以塗佈、曝光、 部分之化後,於超音波洛中將除去光阻物 虿^EL層予以除去、圖型化為佳。 化、广則可令使用光阻物將有機el層圖型 進行高精ϋ的圖U細且有鼠層材料流出等不適,可 件本::=:?:至广層被圖型化之有舰層_元 之表面處理之助圖塑化之構成物及輔助圖型化 士处理之任一者為其特徵的EL元件。 I月之EL 7L件,因為不具有此類間隔壁等,故具有低 90l23579.ptd 第8頁 555830 五、發明說明(6) 費用之優良。 又,本發明為提供具有至少一層有 述有機EL層為經圖型化之發光層,於 邊端部所形成之膜厚不均勻區域之寬 特徵的EL元件。 於本發明之EL元件中,因為膜厚不 // m以下,故可令圖型間的間隔變小 型。此處,所謂「膜厚不均勻區域」 膜厚至膜厚減少之區域,為表示平坦 90%以下膜厚之區域。 更且,本發明為提供具有至少一層 上述有機EL層為可發光出複數顏色之 層’發光出鄰近不同顏色之發光層間 其特徵的EL元件。如此,因為可縮小 進行更高品質的畫像顯示。 其中’較佳至少具有基板、和上述 電極層、和形成覆蓋上述電極層之邊 光部分之絕緣層。因為可防止不需發 低元件短路所造成的缺陷,並且取得 元件。 【發明之實施形態】 以下’首先說明關於本發明之EL元 說明關於可根據此EL元件製造方法所 有之新穎特徵之本發明的EL元件。 90123579.ptd 機EL層的EL元件,上 上述圖型化之發光層 度為15 /zm以下為其 均勻區域之寬度為1 5 ’可作成高精細的圖 為表示由平坦部分之 部分之平坦膜厚之 有機EL層的EL元件, 經圖型化的複數發光 距離為3 0 // m以下為 畫素間的距離,故可 基板上形成圖型狀之 緣部分及元件之非發 光部分的短路,且減 長壽命且安定發光之 件之製造方法,其次 製造之具有先前所未 §111119〇123S7q Page 6 Schematic as described above, but not the EL element layer provided by the layer is better. In the manufacture of cheap liquids, the insolubility and the brush method must be used. The solvent used in the light-emitting layer, the shape and shape of the EL element must meet the above requirements with optical flatness. The three primary colors of green ^ and blue are better to emit light. In the formed M, the organic EL layer formed by the optical lithography method described above may also be a D " light emitting layer, which is preferably patterned;]: in the present invention, 'is particularly limited to this, In addition, in the optical lithography method, the light emitting effect is formed on the left side ί ί ί. At this time, optical lithography: printing method; two :::: layer and luminescent and high-quality EL element. When patterning is performed, the buffer layer is preferably at the photoresist j, and the photoresist is peeled at the formation of the retarder. As in the case of the above-mentioned light-emitting layer, L in the solvent used for the layer varies, but the lithographic printing is performed in a wet manner to meet the above requirements. The cricket lithography method further maps the photoresist solvent, the light-insoluble retarder in the solvent used for light, and the photoresist that is insoluble in the formation "and forms a buffer layer: t imaging solution In the photoresist stripping solution, the photoresist is used in the solvent of the photoresist layer: the light-emitting layer, as described above, in the hair; the pattern t, the buffer layer and the light-emitting layer are combined into The method of forming a π-molecule printing method to form a light-emitting layer that satisfies the above-mentioned requirements and at this time, the first requirement is preferably. The "" layer "is formed next in the present invention. The pattern of the above ten printing method i \\ 326 \ 2d- \ 90-ll \ 90123579.ptd page 7 555830 5. Description of the invention (5) The photoresist is cold-formed on the organic EL layer after patterning, so that the photoresist pattern is patterned, and then the organic EL layer is removed, and the pattern is also patterned. Phase removal photoresist The high organic EL layer of the material part is dry-etched, which can form a better protection. The above-mentioned dry etching is etched with reactive ion etching line A # and ionic silver, which can effectively perform warped layer = L. With Reactivity, in the above dry etching, it is preferred to use Qiu Erqi's oxygen monomer or oxygen-containing gas, then the airless ::: atmospheric pressure plasma Ί: i ϊ two daughters ::. The productivity of 1 is based on: i; :: The right lithography uses optical lithography to pattern and develop the image, so that the photoresist is coated, exposed, and partially modified on the hole layer of the photoresist. After that, the photoresist ^^ EL layer is removed and the pattern is better in ultrasonic. The photoresist can be used to pattern the organic el layer. The high-precision map U type is thin and has rat layer material outflow and other discomforts. The book can be made as follows :: =:?: The wide layer is patterned and has the surface of the ship layer _ yuan. Either the EL element or any of the auxiliary graphic chemist's processes is its characteristic EL element. Since the EL 7L element does not have such a partition wall, it has a low 90l23579.ptd. Page 8 555830 5. Description of the invention ( 6) The cost is excellent. Furthermore, the present invention is to provide an EL element having a wide feature of at least one organic EL layer having a patterned light emitting layer and a wide area of uneven film thickness formed at the edges. In the EL device of the invention, since the film thickness is not below // m, the interval between patterns can be made small. Here, the so-called "non-uniform film thickness region" is a region where the film thickness is reduced to 90. Area with film thickness below%. Furthermore, the present invention is to provide an EL element having at least one layer of the above-mentioned organic EL layer which is capable of emitting a plurality of colors, and which emits light between adjacent layers of different colors. This is because it is possible to reduce the size and display a higher-quality image. Among them, it is preferable to have at least a substrate, the above-mentioned electrode layer, and an insulating layer which forms a side light portion covering the electrode layer. This is because it is possible to prevent defects caused by short-circuiting of low-level components and to obtain components. [Embodiment of the invention] The following will first describe the EL element of the present invention, and the EL element of the present invention which can be based on the novel features of the EL element manufacturing method. 90123579.ptd The EL element of the EL layer of the machine, the above-mentioned pattern has a light-emitting layer of 15 / zm or less, and the width of its uniform area is 1 5 '. It can be made into a high-definition picture. It is a flat film showing a part made of flat parts. The EL element with a thick organic EL layer has a patterned complex light-emitting distance of 30 / m. The distance between pixels is a short distance between pixels. Therefore, a short-circuited edge portion of the pattern and a non-light-emitting portion of the element can be formed on the substrate. , And a method of manufacturing a long-life and stable light-emitting part, followed by a previously manufactured §11111
第9頁 555830 五、發明說明(7) 件之製造方法 本發明之EL元件之製造方法為令構成EL元件之至少—層 的有機EL層,使用光學平版印刷法予以圖型化為其特徵: 於本發明之EL元件之製造方法中,因為令構成EL元件之 至少一層的有機EL層經由光學平版印刷法予以形成,故若 與先前透過投影光罩進行之澱積法相比較,則不需要真办 4置專,故可輕易且廉價進行有機層的圖型化。另二 面,若與喷墨法之圖型化相比較,則並無進行將基體言 細圖型化之丽處理和於圖型間設置撥液性凸部等之必…月 性。即,若根據本發明之EL元件之製造方法,則可 得具有高精細圖型之高品質的E L元件。 、 貝 的::i、具體說明關於此類本發明之EL元件之製造方法中 的谷構成。 1 (有機EL層) 本發明中所謂的EL元件為指且右s ,丨、 ^ 機EL層,具體而言,為至=當層經圖型,之有 極層上所形成的EL層、和上述孔> ^、和上述第—電 所Μ #认u 麻士述EL層上所形成的第二電極層 所構成,於上述EL層中包合5 + 私卜 71Page 9 555830 V. Description of the invention (7) Method of manufacturing the EL element of the present invention The manufacturing method of the EL element of the present invention is to make at least one layer of the organic EL layer constituting the EL element, and use optical lithography to pattern it as a feature: In the manufacturing method of the EL element of the present invention, since at least one organic EL layer constituting the EL element is formed by an optical lithography method, if compared with the deposition method previously performed through a projection mask, the actual There are 4 special settings, so it is easy and cheap to pattern the organic layer. On the other hand, if compared with the patterning of the inkjet method, there is no need to perform the beauty treatment of detailed patterning of the substrate and the setting of liquid-repellent protrusions between the patterns. That is, according to the manufacturing method of the EL element of the present invention, a high-quality EL element having a high-definition pattern can be obtained. I: Specifically, the valley structure in the manufacturing method of the EL element of the present invention will be specifically described. 1 (Organic EL layer) The so-called EL element in the present invention refers to the right EL layer, specifically, the EL layer formed on the electrode layer, And the above hole > ^, and the above-Electricity Institute ## Um the second electrode layer formed on the EL layer, and 5 + private 71 in the EL layer
層。 匕3至少一層經圖型化之有機EL 此處,EL層必須至少包含骖本屆 層、空穴輸送層、空穴注“、^外爲亦可組合緩衝 等。 电于輸适層、電子注入層 又,上述經圖型化之有拖ϋτ a + 何層,但於本發明中,以於二/^為構成上述EL層的任 1先層或緩衝層為佳’其中亦以 555830 五、發明說明(8) 發光層做為有機EL層予以圖型 發揮至最大限度,故為佳=者士因可將本 -將此發光層與緩衝層做 = 可稱為最佳例。 叹兀什卞以 具體而言,於第' —雷;1¾ ® ,^ 兔極層上將做為有機EL芦 由光丰平版印刷法予以圖型化 9 機EL層之發光層經由光學 ^ ^且於其上 再於其上形成第二電極以圖型 先層為三種發光層,經由三回 』特 形成全色彩之EL元件為最佳例先子千版印刷法 於本發明中,具有將此類有 ::平版印刷法進行圖型化此點特^ 由先前所用之方法進行製造。 八他層 (光學平版印刷法) 於本發明之EL元件之製造方法中,且 圖型化為經由光學平版印刷法進行此點二述 對應於綱圖型之任意圖型以二溶解性 光學平版印刷法。 乂下’ (光阻物) 於本發明中可使用的光阻物可為正 :定’但較佳為於發光層等有機阢層形:用: 發明之效果 之方面而 圖型化者, 之緩衝層經 再令做為有 化形成,並 別以上述發 予以圖型化 化時,使用 之製法可經 有機EL層之 此光學平版 變化,形成 說明關於此 ,並無特別 剜中為不溶 具體可使用之光阻物可列舉酚醛清漆樹脂系 橡膠Floor. 3 At least one layer of patterned organic EL Here, the EL layer must include at least the current layer, the hole transport layer, the hole injection layer, and the outer layer, and a buffer can also be combined. Electricity transmission layer, electrons The injection layer is the above-mentioned patterned layer τ a +. However, in the present invention, it is better to use 2 / ^ as any of the first layer or buffer layer that constitutes the EL layer. Among them, 555830 is also used. Explanation of the invention (8) The light emitting layer is used as the organic EL layer to maximize the pattern, so it is better = the person who can use this-this light emitting layer and the buffer layer = can be called the best example. In particular, on the 1st-Lei; 1¾ ®, ^ rabbit polar layer will be patterned as organic EL luminescence by lithographic lithography method. The light-emitting layer of the machine EL layer is optically ^ ^ and A second electrode is formed thereon, and the pattern first layer is three kinds of light-emitting layers, and the full-color EL element is formed in three times. The best example is the pre-printing method in the present invention. There are :: lithographic methods for patterning. This point is specially made by the method used previously. Octalayer (optical lithography In the manufacturing method of the EL element of the present invention, the patterning is performed by an optical lithography method. The second description is an arbitrary pattern corresponding to the outline pattern, and a two-solubility optical lithography method is used. 乂 下 '(Photoresist The photoresist that can be used in the present invention can be positive: fixed ', but is preferably used in organic light-emitting layers such as light-emitting layers: use: The effect of the invention is patterned, the buffer layer is reordered As a chemical formation, and not to be patterned with the above-mentioned hair, the manufacturing method used can be changed by this optical lithography of the organic EL layer, and the formation explanation is not specifically related to the insoluble photoresist that can be used. Novolac resin rubber
90123579.ptd 第11頁 555830 五、發明說明(9) 疊氮系等。 (光阻物溶劑) ;本备明中,將上述光阻物塗 為了於光阻物製膜時可防止發“;=之光阻物溶劑, ,物材料混合和溶解、並且保=有舰層與光 點,目,丨士 t 寺有機EL材料之溶劑。芒去;t + :則本發明可使用的光阻物溶劑 /j右考慮此 >成用材料等之有機EL =、擇對於發光層 氣塵為。,U克/克溶劑;之溶解度於25t Μ 〇·_1(克/克溶劑)以下之溶劑之;’且更佳為選擇 例如’將形成緩衝層材料於 :芳香族系等無極性有機溶劑中 1; ;:解,且發光層 酸自旨、丙二醇單曱;甲丙二醇…醋 醇單_酸酉旨為首之溶纖劑酷二:甲鱗醋酸匕旨、乙二 丙二醇單曱醚、乙二醇單 ··义―曰\丙—醇單***、 劑類、甲醇、乙醇、丨_ 丁 g/、’、、乙之醇f乙鱗為首之溶纖 類、醋酸乙酯、醋酸丁 t ^ : — 丁醇、環己醇為首之醇 :,若滿足條件之其以 上之混合溶劑。 且亦可為一種以 (光阻物顯像液) 又,本發明可使用夕伞 有機EL層之材料即可, 顯像液若為可溶解形成上述 —般所用的有機鹼系顯像液,疋:肚而吕,可使用 卜 了使用無機驗、或可 $ 12頁 W326\2d.\90-ll\90123579.ptd 555830 五 發明說明(10) ___ 將光阻物顯像之水溶液。推一 以洗淨。 違仃光阻物顯像後,期望以水予 本發明可使用之顯像液較佳為 二t形成用材料之溶解度㈣^ 〇· 001 (克/克顯像液)以下之顯像液,且更佳^ • 0001(克/克顯像液)以下之顯像液。 ’、、、k擇 (光阻物剝離液) 更且,本發明可使用之光阻物剝離液必須〜 有機EL層,並且溶解光阻層, 不/谷解上述 :其原樣使用。又’於使用正型光 J且物 二曱基乙 及其混 以2 -丙醇 ,使用光阻物顯像液所列之液體進行剝離τυν曝光 5且’亦可使用強驗水溶液、二 :、二甲基亞礙、Ν-甲基H各烧嗣等:劑 :物、市售之光阻物剝離液。於剝離光阻物 予以洗濯,並再以水洗濯亦可。 ^ (圖型化方法) 本發明所用之以光學平版印刷法之圖型化,且 於使用正型之光阻物時,首先於入 ,、奴而s , 其上將上述光阻物溶劑中溶= : = 機Μ後’於 访工 A 4 合解上迹先阻物材料的光阻物溶 ::以全面塗佈並乾燥,則可首先形成 =阻層進:圖型曝光’並將曝光部分之 :90123579.ptd Page 11 555830 V. Description of the invention (9) Azide and so on. (Photoresist solvent); In this note, the above photoresist is applied to prevent the photoresist solvent from forming when the photoresist is formed into a film; and the materials and materials are mixed and dissolved. Layer and light spot, head, solvent of organic EL material in Temple of Si Temple. T +: t +: the photoresist solvent that can be used in the present invention / j. Consider this > For light-emitting layer air dust, Ug / g solvent; solvent with a solubility of 25t mol · _1 (g / g solvent) or less; and more preferably, for example, 'will form a buffer layer material in: aromatic And other non-polar organic solvents 1;;: Solution, and the light-emitting layer acid purpose, propylene glycol monofluorene; methyl propylene glycol ... acetate alcohol mono_acid alcohol purpose led cellolytic agent Cool II: formazan acetate, ethylene glycol Propylene glycol monomethyl ether, ethylene glycol mono ... meaning-propylene-alcohol monoethyl ether, agent, methanol, ethanol, butyl alcohol, butyl alcohol, acetic acid, acetic acid, etc. Ethyl acetate, butyl acetate t ^:-Butanol, cyclohexanol-based alcohol: If it meets the conditions above, it is a mixed solvent. It can also be a photoresist (Image liquid) In the present invention, the material of the organic EL layer of Umbrella can be used. If the developing liquid is an organic alkali-based developing liquid that can be dissolved to form the above-mentioned general solvent, it can be used. Inorganic test, or can be $ 12 pages W326 \ 2d. \ 90-ll \ 90123579.ptd 555830 Five invention instructions (10) ___ Water solution for developing photoresist. Push one for washing. Violation of photoresist After that, it is desired that the developing solution usable in the present invention with water is preferably a developing solution having a solubility of t ^ 001 (g / g developing solution) or less, and more preferably ^ • 0001 ( G / g developer solution) The developer solution below. ',,, k (photoresist stripping solution) Furthermore, the photoresist stripping solution that can be used in the present invention must have an organic EL layer and dissolve the photoresist layer. , No / Gujie above: It is used as it is. It is also used in the positive light J and di-diethyl ethyl and its mixture with 2-propanol, using the liquid listed in the photoresist developer liquid for peeling τυν exposure 5 And 'can also use strong test aqueous solution, di :, dimethyl amine, N-methyl H each burned, etc .: agents: substances, commercially available photoresist stripping solution It is also possible to wash the photoresist after peeling it off, and then rinse it with water. ^ (Patternization method) The pattern used in the present invention is patterned by the optical lithography method, and when a positive type photoresist is used, first Into, slave and s, on which the above photoresist solvent is dissolved =: = After the machine M ', the photoresist solution of the pre-resistor material is dissolved on the visitor A 4 and the solution is completely coated and dried. , You can first form = resist layer advance: pattern exposure 'and expose the exposed part to:
:部之光阻物。其後去光阻物未覆被部曝 層,將有機EL層予以圖型化之方法。 戍L: Ministry of Photoresistance. After that, the photoresist is not covered with the exposed layer, and the organic EL layer is patterned.戍 L
555830 五、發明說明(li) " ---- 尚王面开y成如上述有機EL層之方法為與通常之有機el 層之形成相同,並無特別限制,除了澱積法以外,可列舉 電極沈2法、使用材料之熔融液、溶液或混合液之旋塗 法、澆鑄法、浸潰法、棒塗法、刮刀塗層法、輥塗法、照 相凹版塗層法、彎曲印刷法、喷霧塗層法等之塗佈方法。 於本發明所用之光學平版印刷法中,如上述於圖型化之 有機EL層上塗佈光阻物,並且曝光、顯像後,使用乾式蝕 刻將除去光阻物部分之有機EL層予以除去亦可。 通常,光阻層為被成膜為更厚於有機EL層,故經由全體 性地進行乾式蝕刻,則可除去有機£1層。 此時,光阻層之膜厚於〇 ·丨〜丨〇 # m之範圍内為佳,且更 佳為0· 5〜5 //m之範圍内。作成此類膜厚,則可依舊保 阻物的光阻機能,並且可進行高加卫精確度的乾式姓刻。 如此1光學平版印刷法之—部分組合乾式餘刻法 令蝕刻邊端部更加尖銳(sharp),故可令圖型邊 之膜厚不均勻區域的寬度更加狹窄,其結$ 高精細圖型化之結果。 運成更加 本發明所用之乾式蝕刻法中,乾式蝕 刻為佳。,經由使用反應、性離子钮刻,則^ ^應性離子餘 學性反應,作成分子量小之化合物 有機?接受化 由基板上除去’可進行蝕刻精確度高、:π瘵發則可 又,於本發明中,於上述乾式蝕刻時,.二之加工。 體或含氧之氣體。使用氧氣單體或含氧二佳使用氧氣單 膜以氧化反應分解除去,可由基板上…土 - ’則可將有機 示去不需要的有機555830 V. Description of the invention (li) " ---- The method of forming the organic EL layer as described above by Shang Wang is the same as that of the ordinary organic el layer, and there is no particular limitation. Except for the deposition method, Electrode sinking method 2, spin coating method using molten material, solution or mixed solution of the material, casting method, dipping method, bar coating method, doctor blade coating method, roll coating method, gravure coating method, flexographic printing method And spray coating methods. In the optical lithography method used in the present invention, a photoresist is coated on the patterned organic EL layer as described above, and after exposure and development, the organic EL layer from which the photoresist is removed is removed by dry etching. Yes. Generally, the photoresist layer is formed to be thicker than the organic EL layer. Therefore, by performing dry etching as a whole, one organic layer can be removed. At this time, the film thickness of the photoresist layer is preferably within a range of 0 · 丨 ~ 丨 〇 # m, and more preferably within a range of 0.5 · 5 // 5. With such a film thickness, the photoresist function of the resister can still be protected, and dry name engraving with high guard accuracy can be performed. In this way, one of the optical lithography methods—partially combined dry-etching method makes the edges of the etched edges sharper, so that the width of the uneven areas of the film thickness on the pattern edges can be narrower. result. In the dry etching method used in the present invention, dry etching is preferred. Through the use of reactions and ionic button engraving, ^ ^ reactive ions are chemically reacted to make small molecular weight compounds. Organic? Acceptance can be removed from the substrate to perform high etching accuracy, and π hair extension is possible. In the present invention, in the dry etching, the second processing is performed. Body or oxygen-containing gas. Oxygen monomer or oxygen-containing second best use of oxygen single film to decompose and remove by oxidation reaction, can be shown on the substrate ...
第〗4頁 WMm W326\2d-\90-ll\90123579.ptd 555830 五、發明說明(12) " " --- 物’並且可進行餘刻精確度高、短時間之加工。又,於此 條件下,並未將通常所用之IT〇等氧化物透明導電膜予以 :Ϊ 1故不會損害電極特性,且於淨化電極表面方面亦為 =且,本發明中,上述之乾式蝕刻較佳 用大氣壓等離子體,則可在大氣壓下進 此時:雖ί : J; J蝕刻,可縮短處理時間並且減低費用。 :予以為 整:應氛圍氣的氣體組:I由乱體之更換及循環而任意調 層ϋ : H =學平版印刷法中’於圖型化之有機EL 物部分之有機EL屏:且曝光、顯像後,以溶劑將除去光阻 劑必須為不會剝:去作成圖型亦可。此時所用之溶 於本發以外’可選擇滿足條件之溶劑。 層上塗佈光阻I =^印=中,於圖型化之有機el 去光阻物部分之右嫵*光顯像後,於超音波浴中將除 之溶劑必須為不合剝:::除去作成圖型亦可。所使用 …光層之塗;物解或制離, 化,將使卜用 且可進行高精確度流:有機EL層材料等不適,並 的圖型化,故為佳。=上::於短時間進行高精確度 __尚於上述光阻物顯像時,亦可使^ 90123579.ptd 第15頁 555830 五、發明說明(13) 此超音波浴進行 於本發明中, 中,以20〜1〇〇千 佳,於此類條件 (緩衝層) 於本發明中, 至少一層為經圖 層或發光 此緩衝層 本發明 地設置於 包含有機 提局對於 坦化機能 本發明 二極體特 因此,期 電阻高時 中,亦可 於本發 法予以圖 料較佳選 溶者,更 為不溶之 層圖型 〇 所謂之 陽極與 物、特 發光層 的導電 所用之 性、並 望根據 ,即使 未設置 明中, 型化形 擇於光 佳令形 材料。 此超音 赫之振 下,可 如此於 型化的 化形成 緩衝層 發光層 別為有 之空穴 性高分 緩衝層 防止交 本發明 未圖型 緩衝層 緩衝層 成做為 阻物溶 成緩衝 ^浴中所用之超音波條件為於25 t 動周波數,且進行〇·1〜60秒鐘為 ;短犄間進行咼精確度的圖型化。 二個電極層所夾住的EL層中,必須 :機EL層,如上述,較佳為將緩衝 為有機EL層。以下,首先說明關於 ,為令電荷可輕易進行注入發光層 之間、或陰極與發光層之間,且為 機導電對等之層。例如,可為具有 注入效率、並且令電極等之凹凸平 〇 於其導電性高時,為了保持元件的 調失真’乃期望將其予以圖型化。 予以圖型化形成。尚,於緩衝層之 化亦可,又,於省略緩衝層之元件 〇 及發光層兩者為經由光學平版印刷 上述有機EL層時’形成緩衝層之材 劑及發光層形成所用之溶劑中為不 層之材料為選擇於光阻物剝離丨夜中Page 4 WMm W326 \ 2d- \ 90-ll \ 90123579.ptd 555830 V. Description of the invention (12) " " --- objects' and can be processed with high precision and short time. In addition, under these conditions, the oxide transparent conductive film such as IT0 which is commonly used is not given: Ϊ 1 so it does not damage the electrode characteristics, and it is also in terms of purifying the electrode surface. And, in the present invention, the above-mentioned dry method Atmospheric plasma is preferred for the etching, but it can be carried out at atmospheric pressure at this time: Although ί: J; J etching can shorten the processing time and reduce the cost. : To be rounded: the gas group that should respond to the atmosphere: I adjust the layer arbitrarily by the replacement and circulation of the disordered body ϋ: H = the organic EL screen of the organic EL object in the pattern in the lithography method: and exposure 2. After development, the photoresist must be removed with a solvent so that it will not peel: it is also possible to make a pattern. The solvent to be used at this time can be selected from solvents which satisfy the conditions. The photoresist I = ^ print = medium is coated on the layer. After the patterned organic el is removed to the right of the photoresistor * light, the solvent removed in the ultrasonic bath must be non-stripping ::: It is also possible to remove the drawing pattern. The use of ... the coating of the light layer; physical dissolution or ionization, and chemical conversion, will be used and can carry out high-precision flow: organic EL layer materials, etc. are uncomfortable, and the pattern is better, so it is better. = Up :: High accuracy in a short time __ When the above photoresist is developed, ^ 90123579.ptd Page 15 555830 5. Description of the invention (13) This ultrasonic bath is performed in the present invention In this case, it is better to be 20 to 100 thousand. Under such conditions (buffer layer) In the present invention, at least one layer is a layer or a luminous layer. This buffer layer is provided according to the present invention. Therefore, when the phase resistance is high, the drawing material can also be selected in this method. The more insoluble layer pattern is used. The so-called anodes and materials, the properties of the special light-emitting layer, And based on that, even if Mingzhong is not set, the shape is selected from the light good shape material. Under the influence of this supersonic wave, the buffer layer can be formed in the same way as the light emitting layer. The light-emitting layer has a high-cavity high-performance buffer layer to prevent the buffer layer of the unillustrated buffer layer of the present invention from being used as a barrier to dissolve the buffer ^ The ultrasonic conditions used in the bath are at 25 t moving cycle number, and the time is from 0.1 to 60 seconds; the accuracy of the short time is patterned. The EL layer sandwiched by the two electrode layers must be an organic EL layer. As described above, it is preferable to buffer the organic EL layer. In the following, first, about, in order to make the charge can be easily injected between the light-emitting layer, or between the cathode and the light-emitting layer, and is an organic conductive equivalent layer. For example, it may be desirable to pattern the electrode in order to maintain the distortion of the device when the conductivity of the electrode and the like is flat while the conductivity of the electrode and the like is high. Be patterned. The buffer layer can also be converted into a buffer layer. When both the element 0 and the light-emitting layer that omit the buffer layer are optical lithographic printing of the organic EL layer described above, the material used to form the buffer layer and the solvent used to form the light-emitting layer are The material of the layer is selected from the photoresist stripping
五、發明說明(14) 另一方面,於發光層 '—~ 由光學平版印刷法所圖型:真空製膜等予以形成、且經 時,形成緩衝層之材料較# = f僅為緩衝層做為有機EL層 離液中不溶之材料。 &擇於光阻物溶劑及光阻物剝 形成本發明所用之緩會 吩衍生物、聚苯胺衍生物T e的材料具體可列舉出聚烷基咦 聚合物、無機氧化物之溶膠安等,空穴輸送性物質之 的聚合膜、含有路易士酸之嬙、二鼠甲烷等之有機物 如上述溶解性之條件者即頁祛化合物膜等,但若為滿足 經由反應、聚合或炮燒等滿足f H,限定,且於製膜後 空製膜等製膜出發光芦睡,^ 述條件亦可。又,經由真 空穴注入材料、空穴^送材^使用—般所用之緩衝材料、 又於本發明中形成緩衝層時所用之a 、 衝材料分散或溶解即可, 谷刎,若為可將緩 型化等,必須製膜數回的緩衝2限=彩之圖 緩衝層溶劑,更佳為不會溶解; w。本發明可使用之緩衝層溶劑 ^的,衝層溶 溶解度於、丨氣愿下為〇.。。1( ::,先阻物材料之 劑,且f祛糸,S裡n nrm , 士 1兑/克洛劑)以下之溶 η思ΐί為、擇 克/克溶劑)以下之溶劑。又, 、,友衝層浴劑再佳為選擇發光材料之溶解度於25。〇 下為0.001 (克/克溶劑)以下之溶劑,特別以選 虱查 醇_二克/克溶劑)以下之溶劑為佳。可列舉 ΐ美之醇類、二甲基甲醯胺、二甲基乙醮胺、-甲基亞砜、Ν-甲基-2_D比咯烷_等之溶劑,但若滿一 第17頁 90123579.ptd 五、發明說明(15) 亦可混合使用二種以上之溶 又 之其他溶劑亦可使用 劑。 使用圖1具體說明此類 圖型化之例。 衝層使用光學平版印刷法予以 圖1為示出根據本發明 圖型化,製造單色EL元件 法,進行緩衝層及發光層之 般,於基體1上,於圖型之順序圖。首先如圖l(a)所示 衝層3。其次如圖1(b)所f第一電極層2之上全面形成緩 阻層4並且進行預烘烤。复=,於緩衝層3之上形成正型光 以部分性遮光,進行紫外、綠人如圖1 (c)所示般,以光罩5予 示般,若經由光阻物顯像液:型曝光6。其次如圖1(d)所 除去曝光部的光阻物及緩徐从顯像、並進行水洗,則可 若經由光阻物剝離液將心。3次,如圖1(e)所示般, 極層2之緩衝層3之圖型。盆;制離,則可形成覆蓋第一電 1上圖型化之第-電極層2和第_ : f 1⑴所示般,於基體 上,全面形成發光層7。其次如_亟層2所設置之緩衝層3 上形成正型光阻層4並且進行預二妹g。所示般,於發光層7 邊又,以光罩5予以部分性遮光,進 /、_人如圖1 (h )所示 :欠如圖⑴)所示般,若經由光阻物^外線圖型曝光6。其 灯水洗,則可除去曝光部的光阻物。^夜予以顯像、並進 般’若經由發光層之溶劑進行洗淨,次’如圖1 (j )所示 出的發光層7。其次如圖j⑴所示般,、奸可除去圖型化所剝 將光阻物剥離。最後如圖1 (1)所示般,ϋ光阻物剝離液 並朝向圖下方放出EL元件9,則可製造^成第二電極層8V. Description of the invention (14) On the other hand, the light-emitting layer is formed by the optical lithography method: vacuum film formation, etc., and the material used to form the buffer layer over time is only # = f. As an insoluble material in the organic EL layer. & Materials selected from photoresist solvents and photoresist stripping to form the phenol derivatives and polyaniline derivatives T e used in the present invention include polyalkylfluorene polymers and sol-sols of inorganic oxides. Polymeric films of hole-transporting substances, organic substances containing Lewis acid hydrazone, dimethane, etc., such as those that dissolve the above conditions, ie, compound films, etc., but if they meet the requirements of reaction, polymerization, or calcination, etc. Satisfies fH, is limited, and the luminescence of the film is formed after film formation, such as film formation, and the above conditions may also be used. In addition, the material is injected through the vacuum cavity, the material is used as the cavity, the material is generally used, and the a material used when the buffer layer is formed in the present invention is dispersed or dissolved. Gu, if it can be used, For buffering, etc., it is necessary to make the buffer 2 times for the number of times of buffering = color map buffer solvent, more preferably it will not dissolve; w. For the buffer layer solvent that can be used in the present invention, the solubility of the redox solution is 0, 0, and 0. . 1 (::, the agent of the first blocking material, and f 糸 S, n nrm, ± 1 / closing agent) The solvent below η ΐ 为 is, choose the solvent per gram / gram). In addition, it is even better to select a luminescent material with a solubility of 25. The solvent below 0.001 is 0.001 (g / g solvent), especially the solvent below Lectanol_2 g / g solvent is preferred. Examples include solvents for Ramisol, dimethylformamide, dimethylacetamide, -methylsulfoxide, N-methyl-2_D than pyrrolidine, etc., but if it is at least one page 1790123579 .ptd 5. Description of the invention (15) It is also possible to mix and use two or more solvents and other solvents. An example of such patterning will be specifically described using FIG. 1. The punching layer is applied using an optical lithography method. FIG. 1 is a sequence diagram showing a patterning method for manufacturing a monochromatic EL element according to the present invention, and a buffer layer and a light-emitting layer. First, as shown in FIG. 1 (a), the punching layer 3 is punched. Secondly, as shown in FIG. 1 (b), the retardation layer 4 is fully formed on the first electrode layer 2 and pre-baked. Complex =, a positive light is formed on the buffer layer 3 to partially block the light, and the ultraviolet light and the green person are shown as shown in FIG. 1 (c), as shown by the photomask 5, if the photoresist is developed through the photoresist: Type exposure 6. Next, as shown in Fig. 1 (d), the photoresist in the exposed area is removed, and the image is slowly developed and washed with water, so that if the photoresist is peeled off, the heart can be removed. Three times, as shown in FIG. 1 (e), the pattern of the buffer layer 3 of the electrode layer 2. The first electrode 1 can be formed to cover the first electrode layer 2 and the first electrode layer 2 and f_: f1, as shown in the figure above, and a light-emitting layer 7 can be formed on the substrate. Secondly, a positive-type photoresist layer 4 is formed on the buffer layer 3 provided in the _ urgent layer 2 and a pre-g sister is performed. As shown in the figure, the light-emitting layer 7 is partially shielded by the photomask 5, and the figure is as shown in Figure 1 (h): as shown in Figure ⑴). Type exposure 6. The lamp is washed with water to remove the photoresist in the exposed area. Developed at night and proceeded in a general manner ”If the light-emitting layer is washed with a solvent, the light-emitting layer 7 is shown in FIG. 1 (j). Next, as shown in FIG. 10 (a), the photoresist can be removed by patterning and the photoresist can be peeled off. Finally, as shown in FIG. 1 (1), the photoresist stripping solution is released, and the EL element 9 is released toward the bottom of the figure, and the second electrode layer 8 can be manufactured.
Wi! 90123579.ptd 第18頁Wi! 90123579.ptd Page 18
555830 五、發明說明(16) (發光層) 其次,說明關於根掳士政 機EL層的發光層。 X明予以圖型化所形成之做λ亡 形成此類發光層之材料,… 行發光者即可,並無特別限定]=^發出螢光之材料且進 j發:機能和空穴輪送機能‘發::之材料’可兼 層之材料較佳為於上述光阻物溶巧輪,,成,且形成發光 及上述光阻物剝離液中為不溶之ς上述先阻物顯像液、 學平版印刷法予以圖型化時所ΐ之:L將發光 為使用於形成發光層所用之溶劑 斤f之^且*,較佳 本發明可使用之發 ;才料。 j列舉例如下列材料。 土素系材料可列舉甲環戊丙胺衍 Γ :;苯胺衍生“1二唾衍生物… 物一本乙烯基苯衍生物、二1Γ κ甘& 林何生 sii〇^生物、嘆吩環化合物、吼咬環土化入芳物基衍生物' 物、外衍生物、低聚嗓吩衍生物、:°物_、周酮, 哇二聚物…琳二聚物等。 -田馬細何生n 1 物系材料 金屬錯合物系材料可列舉喳啉醇鋁錯合 :::物、苯雄鋅錯合物、苯並嘴唾鋅錯合物:偶氮予 錯7合物、士琳辞錯合物、銷錯合物等、於中心金屬 ;1二η、β4、或Tb、Eu、Dy等稀土金屬,且於配位 土 /、有、二。坐、噻二唾、苯基吡啶、苯基笨並味唑、嗜啉 | .'f, 90123579.ptd 第19頁 五、發明 3構ΐ等之金屬錯合物等 吩衍生物、聚:J: /聚對伸苯基伸乙烯基衍生物、聚噻 生物、聚苟衍生物二何生物、聚矽烷衍生物、聚乙炔衍 金屬錯合物4:材;予乙:!:=:、上述色素體、 於本發明中,由活用材料等。 印刷法以良好精产:用:光層用塗佈液經由光學平版 使用上述之高八】2成發光層之優點的觀點而言,更佳 …糸材料做為發光材料。 下:ϊ::i:t之發光效率、令發光波長變化之目的 素衍生物、紅!烯:::材:可列舉例如义衍生物、香豆 物、她生色:酮:生!、祕衍生 ,生物、十環缚、素、並四苯衍生4勿…琳 用溶液 製用之溶液與緩衝層使用•,為了防止發光層 料材料混合和溶解,並且保持發光材 不木之叙先特性,期望不會溶解緩衝層。 =2類觀點而言,發光層塗佈用溶劑對於緩衝層 較佳選擇於25t、^氣壓為。.001(克/克溶劑)以 劑。,谷别,且更佳為選擇〇. 〇〇〇1(克/克溶劑)以下之溶 更且,發光層塗佈用溶劑於塗佈數層發光層之情形中, 第20頁 90l23579.ptd 555830 五、發明說明(18) 方、^二色以後之發光層製膜時,為了防止伞 材料混合和溶解 光阻層與發光 望不會溶解光阻物。 t化之發光層,乃期 由,類觀點而言,發光層塗佈溶劑 溶劑,且更3 C ]氣塵為〇.〇°1(克/克溶劑)以下之 山’热π更仏為選擇〇.0 0 0 1 (克/克溶劑)以下之溶劑。彻 、、羡衝層溶解於水系和DMF、DMS0、醇類等之極性、二 #、 匆為一般的酚醛清漆系光阻物之情形,可使 , 本^ —甲笨之各異構物及其混合物、三曱基笨、 ^ 二—對〜繳花烴、枯烯、乙基苯、二乙基苯、丁基 本三^苯、二氯苯之各異構物及其混合物等為首之芳香/ 糸洛悧、茴1醚、苯***、丁基苯醚、四氫呋喃、2〜丁矢 酮:、4J二$燒、二乙_、二異丙ϋ、二苯驗、二爷_、 、一-享甲_專為首之_系溶劑、二氯甲烧、1,1 -二氣乙 ^ 1 ’ t 一氯乙烷、三氯乙烯、四氯乙烯、氯仿、四氣化 碳、氣基萘等之氯系溶劑、環己酮等,若為滿足條件之 其他溶劑則亦可使用,且亦可為二種以上之混合溶劑。 (形成數種發光層之情況) 〃方/本發明中,上述發光層為不同種類之發光層經由數回 光學平版印刷法所形成的發光層為佳。經由將發光層作成 不同種類的數層發光層,例如,若選擇紅、綠及藍等,則 可予以全色彩化。 此時,根據以下所示之理由,上述第2回以後所形成之 發光層的發光層形成用溶劑,較佳對於已形成之發光層為555830 V. Description of the invention (16) (Light-emitting layer) Next, the light-emitting layer of the EL layer of the Genji government will be described. X Ming patterned the material that is formed by λ to form such a light-emitting layer, ... It is sufficient for those who emit light, and there is no particular limitation] = ^ Materials that emit fluorescent light and enter into it: function and hole rotation The function of the material that can be laminated is preferably the above-mentioned photoresist solution dissolving wheel, which forms and emits light and is insoluble in the photoresist stripping solution. The above-mentioned pre-resistance imaging solution. What the lithographic printing method used to pattern: L will emit light as the solvent used in the formation of the light-emitting layer, and *, preferably the hair that can be used in the present invention; j lists, for example, the following materials. Examples of soil-based materials include methylcyclopentylamine derivative Γ: aniline derivative "1 disial derivative ... 1 vinyl benzene derivative, 2 1 κ κgan & Lin Hesheng sii〇 ^ biological, fenphen ring compound, roar Bitumenized into aromatic-based derivatives' substances, exo-derivatives, oligomeric phenophenone derivatives, 物 物 _, perone, wow dimer ... Lin dimer, etc.-田 马 细 何 生 n 1 Materials of the system Metal complex materials can include aluminum oxalinol complex :::, benzoandrazine complex, benzodiasal zinc complex: azo-Yu complex 7, Shilin Ci Complexes, pin complexes, etc., in the center metal; 1 di η, β4, or rare earth metals such as Tb, Eu, Dy, and in the coordination soil /, there, two. Sit, thiadisal, phenylpyridine , Phenyl benzimidazole, Phosphophilic | .'f, 90123579.ptd Page 19 V. Phenyl derivatives such as metal complexes of invention 3, fluorene, etc., poly: J: / poly-p-phenylene vinylene Derivatives, polythiazoline, polygonium derivatives, dihobio, polysilane derivatives, polyacetylene-derived metal complexes 4: wood; Yu B:!: = :, the above-mentioned pigment bodies, used in the present invention Materials, etc. The printing method has good precision: use: the coating solution for the light layer uses the above-mentioned high-level [20%] light-emitting layer through optical lithography, and it is better ... 糸 material is used as the luminescent material. Next: ϊ :: The luminous efficiency of i: t, the target derivative that changes the luminous wavelength, and red! ene ::: Materials: For example, meaning derivatives, coumarols, her chromophores: ketones: raw !, mysterious derivatives, biological, Ten ring, prime, tetracene derivative 4 Don't ... Lin solution used for the solution and buffer layer use, in order to prevent the light-emitting layer material from mixing and dissolving, and to maintain the characteristics of the light-emitting material non-wood, I hope it will not Dissolve the buffer layer. = From the viewpoint of 2 types, the solvent for the coating of the light-emitting layer is preferably selected at 25 t and the pressure is .001 (g / g solvent). 〇. 〇〇〇〇〇1 (g / g solvent) below the solvent, and the light-emitting layer coating solvent in the case of coating several light-emitting layers, page 20 90l23579.ptd 555830 V. Description of the invention (18) Fang In order to prevent the photoresist from mixing and dissolving the umbrella material when forming the light-emitting layer after It will not dissolve the photoresist with the luminescence. The light-emitting layer that is converted into a tantalum is expected to be coated with a solvent solvent, and more 3 C] air dust is 0.0 ° 1 (g / g solvent ) The following mountain 'hot π' is more to choose a solvent below 0.000 1 (g / g solvent). The polar layer of the dioxin, dioxin is dissolved in the water system and the polarity of DMF, DMS0, alcohols, etc. In the case of general novolak-based photoresist, this can be achieved by using the isomers of methylbenzyl and its mixtures, trimethylbenzyl, and di-p ~ fene, cumene, ethylbenzene , Diethylbenzene, butylbenzylbenzene, dichlorobenzene and other isomers and their mixtures, such as aromatics, melilonium, anise 1 ether, phenyl ether, butyl phenyl ether, tetrahydrofuran, 2 ~ butyl Ketones :, 4J dioxan, diethyl _, diisopropylhydrazone, diphenyl test, Erye _, _, yixiangxiang _ specially designed _ series of solvents, dichloromethane, 1, 1-digas ^ 1 't Chlorine solvents such as monochloroethane, trichloroethylene, tetrachloroethylene, chloroform, tetracarbonated carbon, gas naphthalene, etc., cyclohexanone, etc. can also be used if other solvents satisfying the conditions, And can also be two The above mixed solvent. (Case where several kinds of light emitting layers are formed) In the formula / the present invention, it is preferable that the light emitting layer is a light emitting layer formed by different types of light emitting layers through several optical lithography methods. The light-emitting layer is made into several kinds of light-emitting layers of different types. For example, if red, green, and blue are selected, full-colorization can be performed. At this time, for the reasons shown below, the light-emitting layer-forming solvent for the light-emitting layer formed after the second round and above is preferably the formed light-emitting layer.
555830 五、發明說明(19) 貧溶劑。尚,於本發明中,所謂「貧溶劑」為指溶解溶質 之能力小的溶劑。 ’、 即’於已形成之發光層(以下,稱為已形成發光層)上, 再將發光層形成用塗料予以塗佈形成發光層時,通常於已 形成發光層上形成光阻層,故發光層形成用塗料不會全面 性接觸已形成發光層。但是,已形成發光層之邊緣部通常 未覆蓋光阻層,故於此部分之發光層形成用塗料為與已形 成發光層接觸。如此接觸時,已形成發光層對於發光層形 成用塗料所含之溶劑為輕易溶解時,於發光層形成用^料 中乃溶入已形成發光層的發光材料,發生混色。本發明 用以解決此類問題點,㈣使用發光層形成用溶劑,相對 於已形成發光層為貧溶劑,則可解決上述問題點。 圖2為示出本發明之虬元件之製造方法之一例。於此例 中士百先如圖2(a)所示般,於基體丨丨上形成經圖型化 一電極層12及緩衝層13。關於此緩衝層詳述於後。 以ΐί二其上將第一發光層形成用塗料使用旋塗法等予 。纟第一發光層形成用塗料至少由發出第-色 將“ J ΐ:劑:和視需要所添加之摻混劑等所構成。 層形成用塗料予以乾燥硬化,則可 ^成第一發光層14(圖2(a))。 丄於此第一發光層14上,將正型光阻 :=:層15(圖2(b)),使得形成第一發光層i4 J ‘ 2(⑼。其後將正型外^17照射圖型(圖 I光部分以光阻物顯像液555830 V. Description of the invention (19) Lean solvent. In the present invention, the "lean solvent" refers to a solvent having a small ability to dissolve a solute. When the light-emitting layer is coated on the formed light-emitting layer (hereinafter, referred to as the formed light-emitting layer), and then the light-emitting layer is formed by coating, a photoresist layer is usually formed on the light-emitting layer. The paint for forming a light-emitting layer does not completely contact the light-emitting layer that has been formed. However, the edge portion of the formed light emitting layer is usually not covered with the photoresist layer. Therefore, the paint for forming the light emitting layer in this portion is in contact with the formed light emitting layer. In such a contact, when the light-emitting layer that has been formed is easily dissolved in the solvent contained in the coating for forming the light-emitting layer, the light-emitting material that has already formed the light-emitting layer is dissolved in the material for forming the light-emitting layer to cause color mixing. To solve such problems, the present invention can solve the above problems by using a solvent for forming a light-emitting layer, which is a poor solvent compared to the light-emitting layer that has been formed. FIG. 2 shows an example of a method of manufacturing a rhenium element according to the present invention. In this example, as shown in FIG. 2 (a), Sprite first forms a patterned electrode layer 12 and a buffer layer 13 on the substrate. The details of this buffer layer will be described later. The coating for forming the first light-emitting layer is spin-coated on the substrate.涂料 The coating for forming the first light-emitting layer is composed of at least the first color, "J ΐ: agent: and a blending agent added if necessary. The layer-forming coating can be dried and hardened to form the first light-emitting layer. 14 (FIG. 2 (a)). On the first light-emitting layer 14, a positive photoresist: =: layer 15 (FIG. 2 (b)) is formed so that a first light-emitting layer i4 J'2 (⑼) is formed. Thereafter, the positive outer shape is irradiated to the pattern (photograph I is a photoresist developing solution for the light part)
555830555830
五、發明說明(21) 其次,如圖2 (g) p r 〜 圖2(h)所示般,配:J’全面形成正型光阻層15,並如 分予以遮蔽,並以擎:形成第-及第二發光層之部 像液予以顯像、水、,,進灯曝光。其後經由光阻物δ 正型光阻層,並4去;成第—及第二發光層部分:: 像液除去露出的第二發^⑷刀1其後第二發光層顯 選擇使用相對於第—二二二i 4,第二發光層顯像液為 發光層顯像時,第二2 ^ f為貝溶劑者。其係因為在第二 第一發光層之邊端部曰^^像’夜與第—發光層為於上述 層顯像液使用相對二 为接觸,故經由上述第二發光 色等問題。 、 叙光層為貧溶劑者,則可迴避混 經由此類第二發并层 示般,僅將未殘存“二:第則可如圖2⑴所 去,並且僅殘留-型光阻=覆以:發:層18除 二發光層1 8之顯像工鞋由,介叮=钣之口P刀。尚,於此第 更且,與第一及第二 展、"/用後述之乾式蝕刻法。 層形成用塗料使用輪;“:::::地,將第三發光 光層形成用塗料亦與上述第一 =佈。此時之第三發 樣地,具有發光材料和溶劑、及視成用塗料同 又,此時所用之第三發光層形成::^ ==劑、。、 第技第二發光層18為貧溶劑的溶劑。、上述 如些塗佈弟三發光層形成用塗料時, 般,於最初形成之第一蘇#展! 4夕、息山J如圖2( J )所不 盥淨饰之第- π氺思&先層14之邊J而部a中第一發光層 與,佈之第二餐先層形成用塗料接觸,更且於第二發光層 第24頁 \\326\2d-\90-ll\90123579.ptd 555830 五、發明說明(22) 1 8 ^邊端部b及邊端部C中第二發光層與 形成用塗料接觸。此時亦同樣地, 發光層 溶劑相對於第-發光層14及第:發=形成用 中溶出之二先層18於第三發光層形成用塗料 料乾燥、二:後令第三發光層形成用塗 “中發生= 發先層19時’亦不會於第三發光層 次’Λ第三發光層19上全面形成正型光阻層⑸圖 一、第/及人第一如H2(k) ^不般’配置光罩16將形成第 行曝光以遮蔽,並以紫外線!7進 第三發光:用=顯象液予以顯•、水洗。其後使用 屏爾姑A曰用”、、1像液進订顯像,但此時亦同樣令第-恭冰 18、特別Λ針於夂八上發先層14及第二發光層 發光材料為貧溶劑者。®此,於此第三 發光層18、特別為此歧發 先層14和/或第二 會發生混色等問題。一先材+顯像液中溶出,並且不 圖三=;1象液將第三發光層19顯像,則* 層19除去,並留=阻層未覆被部分之第三發光 苴後,苦以古 其 光阻層15所覆被之部分。 之部分開:液;行剝離處理,則由形成光阻物 第一發光層14(通常為駐^^且t圖2(m)所不般,剝出形成 色)、第三發光声19(Ί 、第二發光層18(通常為綠 尤層19(通常為紅色)之三色發光層。最後如 第25頁 \\326\2d-\90-ll\90123579.ptd 發明說明(23) __ $ 2 (η)般,若於此些發光層上形 造於圖下方放出EL發光21的阢元件 電極層2〇,則可製 於本發明中,所謂貧溶劑,=表八 發光層的發光層形成用溶劑,相割;Ζ弟二回以後所形成之 光層構成材料於2 5 °C、1氣壓中已形成之發光層的發 以下,特別於本發明中,上过 & ~度為〇 · 1克/克溶劑 下為佳。 边心知度為0·05克/克溶劑以 若為此程度之溶解度,則於 成用溶劑中溶解已形成的發井Μ之發光層的發光層形 發光層内即使混入已二:ΐ層構成材料,且於新形成的 I Ί文此八匕形成的發光 極少,故不會發生混色等問題尤s構成材料,亦因其量為 又於本發明中,經過數回光學平π 時,此些複數發光層關於由各形成發光層 長側依序形成為佳。其理由為如所传之光波長由短波 即,通常,螢光性發光材料混合二 能量高裎声夕:料八V $ 巴W上日等,來自激發 動,並且i,、列對於低程度之激發子引起能量的移 LG::;:最低激發狀態的螢光。即,能量高的 時,二异、,古:八和旎量低的長波長發光成分混合存在 A Μ itb 4^叙光成分的發光乃成為主要發光。本發明 為利用此類發光材料之性皙 開始依序形成,則可=出短波長光之發光層 〗了方、先則紐波長發光材料所形成之第一 t ί 成更長波長發光材料所形成的第二發光層。 =1於上34第"'發光層所圖型化之基體上將第二發光層 製膜時,即使來自第一發光層圖型化邊緣部之發光材k 555830 五、發明說明(24) 一部分溶解,並且與第二發光層混合,亦僅令第一發光層 中之發光材料的激發能量為呈現能量移動,並且觀察到來 自第二發光層的發光,使得發光特性之降低為呈最小限 度。 關於此點’再使用上述圖2予以說明。圖2(a)至(e)因為 與上述說明相同,故於此處省略說明。於圖2 ( f )中,將第 二發光層形成用塗料使用旋塗法等予以全面塗佈。此時之 第二發光層形成用塗料為如上述與第一發光層形成用塗料 同樣地,由發光材料及溶劑、及視需要所添加之摻混劑等 所構成,並且選擇第二發光層所使用之發光材料之發光, 為比上述第一發光層所用之發光材料之發光更長波^的發 光材料。 此時,如圖2 ( f )所闡 VI力又 形成用塗料 述,於基體 盖其表面, 露出的狀態 塗料,則第 部a中接觸< 有溶劑,故 料之溶解性 於上述第二 一發光層之 態下,若經 、與第一發 1 1上殘留之 而經:由發光 。因此,於 一發光層1 4 ’此時,第-雖然亦根據 而異,但第 發光層形成 發光材料於 由乾燥固化 光層1 4發生接觸之部分。即,如 第一發光層14為以正型光阻層15^ 層顯像液所顯像之邊端部a為呈设 其上若塗佈上述第二發光層形成用 與第二發光層形成用塗料於4; -發光層形成用塗料因為如上而 此溶劑與第一發光層所 a / 一發光層之發光材料之一〔光材 】塗=容出的可能性。::ίί 第一务光層形成用塗料 、第 形成第二發光層1 8,則’一之狀 、j昂一發光層V. Description of the invention (21) Secondly, as shown in Figure 2 (g) pr ~ Figure 2 (h), with: J 'to form a positive photoresist layer 15 in its entirety, and cover it as appropriate, and use the following: The image liquid of the first and second light-emitting layers is developed, exposed to water, and exposed to light. Then pass through the photoresist δ positive photoresist layer, and go to the first and second light-emitting layer :: remove the exposed second hair from the image liquid ⑷ ⑷ 刀 1, and then the second light-emitting layer is selected to use the relative When the second-two-two i 4 and the second light-emitting layer developing liquid are developed by the light-emitting layer, the second 2 ^ f is a shell solvent. This is because the image at the end of the second first light-emitting layer and the first light-emitting layer are in contact with each other in the above-mentioned layer developing solution, so the problem of the second light-emitting color is caused. If the narrative layer is a poor solvent, you can avoid mixing through such a second pass and show only the "second: the second can be removed as shown in Figure 2 and only the -type photoresistor = overwrite : Hair: layer 18 except two light-emitting layers 18 for the development of work shoes, Jie Ding = sheet mouth P knife. Still, here is the first, and the first and second exhibition, " / use the dry type described later Etching method. The layer-forming paint is used in a round; ":::::", the third light-emitting light-layer forming paint is also the same as the first = cloth. The third sample at this time has a light-emitting material, a solvent, and a coating material, and the third light-emitting layer used at this time is formed as: ^ == agent. The second light emitting layer 18 is a solvent of a lean solvent. As mentioned above, when the coating for forming the three-light-emitting layer is applied, the first Soviet Union exhibition that was originally formed! 4th, Xishan J, as shown in Figure 2 (J) & The first light emitting layer in the side J of the first layer 14 and the part a is in contact with the coating for forming the second food layer of the cloth, and is on the second light emitting layer on page 24 \\ 326 \ 2d- \ 90-ll \ 90123579.ptd 555830 V. Description of the invention (22) 1 8 ^ The second light-emitting layer in the side end portion b and the side end portion C is in contact with the coating for forming. At this time, similarly, the light-emitting layer solvent is dried with respect to the first light-emitting layer 14 and the second light-emitting layer. The first layer 18 is dried in the third light-emitting layer-forming coating material, and the second light-emitting layer is formed. The use of the coating "Middle occurrence = when the first layer 19 is used, 'it will not form a positive photoresist layer on the third light-emitting layer 19'. The first, first, and first people are like H2 (k). ^ Unusually 'configuring the photomask 16 will form the first line of exposure to shield, and use ultraviolet light! 7 into the third light: display with = developer liquid, washed with water. Then use Pingergu A ", 1, The image is developed by image liquid, but at this time, the first-gong ice 18, especially the Λ needle, and the light-emitting material of the first layer 14 and the second light-emitting layer on the eighth are also poor solvents. ® Here, the third light-emitting layer 18, especially the pre-cursor layer 14 and / or the second, may cause problems such as color mixing. A material + dissolution in the developing solution, and not shown in Figure 3 =; 1 After the third light-emitting layer 19 is developed by the image liquid, the * layer 19 is removed and left = the third light-emitting layer that is not covered by the resist layer, The portion covered by the photoresist layer 15 is ancient. Partially opened: liquid; stripped, the first light-emitting layer 14 is formed by photoresist (usually ^^ and t FIG. 2 (m) is not the same, peeling to form color), the third light-emitting sound 19 ( Ί, the three-color light-emitting layer of the second light-emitting layer 18 (usually the green especially layer 19 (usually red). Finally, as shown on page 25 \\ 326 \ 2d- \ 90-ll \ 90123579.ptd invention description (23) __ As shown in FIG. 2 (η), if the luminescent element electrode layer 20 emitting EL light emission 21 is formed on these light emitting layers below the figure, it can be produced in the present invention. Solvents for layer formation, phase-separation; the light-emitting layer formed after the second phase of the second phase of the light-emitting layer is formed at a temperature of 25 ° C and 1 atmosphere, and the light-emitting layer is formed, especially in the present invention. It is preferably in a solvent of 0.1 g / g. The intelligibility is 0.05 g / g of the solvent so that if the solubility is at this level, the light emission of the light-emitting layer of the formed well M is dissolved in the solvent for use. Even if the layered light-emitting layer is mixed with two layers: the material constituting the layer, and the light emitted from the newly formed I script is very little, so no problems such as color mixing will occur. It is also because in the present invention that, after several times of optical plane π, these plural light emitting layers are preferably formed in order from the long sides of each light emitting layer. The reason is that the wavelength of light transmitted by the short wave is That is, in general, fluorescent light-emitting materials are mixed with two high-energy sounds: material V, V, B, W, and so on, which are derived from excitations, and i, and the columns cause energy shifts of low-level excitons. LG ::;: Lowest Excited fluorescent light. That is, when the energy is high, the diisocyanate, palladium, and palladium: the light emission of the long-wavelength light-emitting component with a low amount of ammonium is mixed and the light emission of the A mitb 4 ^ -light-emitting component becomes the main light emission. The nature of such light-emitting materials begins to form in order, so the light-emitting layer of short-wavelength light can be formed. The first t formed by the square-wavelength light-emitting material and the second t-shaped light-emitting material can be formed. Luminous layer. = 1 When the second luminous layer is formed on the substrate patterned on the 34th "quotation" of the luminous layer, even if the luminous material from the edge portion of the pattern of the first luminous layer is k 555830 5. Description of the invention (24) a part is dissolved and mixed with the second light emitting layer, Only the excitation energy of the light-emitting material in the first light-emitting layer is shifted to show energy, and the light emission from the second light-emitting layer is observed, so that the reduction of the light-emitting characteristics is minimized. Regarding this point, use FIG. 2 described above. 2 (a) to 2 (e) are the same as the above description, so the description is omitted here. In FIG. 2 (f), the coating material for forming the second light-emitting layer is fully coated by a spin coating method or the like. The second light-emitting layer-forming coating at this time is composed of a light-emitting material and a solvent, and a dopant added as needed, as in the case of the first light-emitting layer forming coating, and the second light-emitting layer is selected. The light emission of the light-emitting material used is a light-emitting material having a longer wavelength than that of the light-emitting material used in the first light-emitting layer. At this time, as shown in FIG. 2 (f), the VI force formation coating is described. When the surface of the substrate is covered and the coating is exposed, the first part a is in contact with a solvent, so the solubility is expected to be the same as the second one. In the state of a light-emitting layer, if the warp and the warp remaining on the first hair 11 are passed: light is emitted. Therefore, at this time of a light-emitting layer 14 ', although the -th part also varies depending on the case, the second light-emitting layer forms a light-emitting material at a portion where the light-layer 14 is cured by drying. That is, for example, if the first light-emitting layer 14 is a side end portion a developed by a positive photoresist layer 15 ^ developing solution, the second light-emitting layer formation and the second light-emitting layer formation are applied thereon. Use paint for 4;-The paint for forming the light-emitting layer because the above is the possibility that the solvent and one of the light-emitting materials of the first light-emitting layer [light material] are coated. : Ίί The first coating for forming a light layer, and the second light-emitting layer 18 are formed, and then a light-emitting layer is formed.
555830 五、發明說明(25) 】8成為含有第一發光層中之發光材料。作曰 因為第一發光層1之發光材料與第二發光;於此例中, 如上述之基準,即,選擇第一發光層之m之發光材料為 光為比第二發光層之發光材料所發出之s ^材料所發出之 即使於第二發光層中混入第一發光層之 j短波長,故 上述理由亦可令第一發光層之發光材材料時,根據 光的可能性變少。 、昂一發光層中發 其後,圖2(g)及圖2(i)為進行與上 與形成第-及第二發光層同樣地,將J 之工程。 料使用⑬塗法等予以全面塗佈。 層形成用塗 塗料亦與上述之第一及第二發 / = ς發光層形成用 有發光材料和溶劑、及視需要所J料同樣地’具 之發光材料乃選擇令此第三發光層所用此時所用 之螢光,比上述第一於来屏:★ 之叙光材料所發出 材料所發出之螢光更^波^。 V第二發光層所用之發光 如此塗佈第三發光 般,於最初所形成夕二/成用主料日可,亦例如圖2( j )所示 層與所塗佈之^二私也一發光層1 4之邊端部a,第一發光 光層形成用塗料接觸:光層與所塗佈之第二發( 光材料及第-恭水旺此日守亦冋樣地,第一發光層中之發 成用塗料中之二、之發光材料為溶解於第三發光層形 料中之可能性::時並=至第三發光層形成用塗 為選擇比第一發光;由為上迷弟三發光層中之發光材料 久e中之發光材料及第二發光層中之發光555830 V. Description of the invention (25)] 8 becomes a luminescent material containing the first luminescent layer. This is because the light-emitting material of the first light-emitting layer 1 and the second light-emitting; in this example, as described above, that is, the light-emitting material of m of the first light-emitting layer is selected as the light-emitting material that is lighter than the light-emitting material of the second light-emitting layer. The emitted s ^ material emits even if the short wavelength of the first light-emitting layer is mixed in the second light-emitting layer, so the above reasons can also reduce the possibility of light-emitting material when the light-emitting material of the first light-emitting layer is used. Then, in the Ang Yi light-emitting layer, FIG. 2 (g) and FIG. 2 (i) are performed in the same manner as in the first and second light-emitting layers. The material is fully coated using a trowel coating method. The coating material for layer formation is also the same as the above-mentioned first and second light-emitting layer forming light-emitting materials and solvents, and if necessary, the same light-emitting material is selected for the third light-emitting layer. The fluorescent light used at this time is more ^ wave ^ than the fluorescent light emitted by the above-mentioned first light-emitting material: ★. The luminescence used for the second light-emitting layer is the same as that for the third luminescence. It can be formed on the first day / the main material for the first day. For example, the layer shown in Fig. 2 (j) and the applied layer The edge end a of the light-emitting layer 14 is in contact with the paint for forming the first light-emitting light layer: the light-emitting layer is in contact with the applied second light (light-emitting material and the first-gongshuiwang). The possibility that two or more of the luminescent materials in the coating for hair growth in the layer are dissolved in the third light-emitting layer material :: Hours = to the third light-emitting layer forming coating is selected to emit light than the first; The light-emitting material in the emissive three light-emitting layer for a long time and the light-emitting material in the second light-emitting layer
90123579.ptd 第28頁 555830 五、發明說明(26) 材料所發出之螢光更長波長,故根據上述理由, 層之發光材料及第二發光層中之發光材料於第三發^中 發光的可能性少,並且可減低發生混色。 X曰 之月二ί此’將形成發光層之發光材料為以發光 之先波長紐者依序塗佈為佳。具體而言 $先 色彩畫像,發光材料乃使用發出紅^取付全 使用此類發光材料時,此發光材光材料,但 色、綠色、紅色之順序,將含有此 序,即藍 以塗佈、形成為佳。 二么先材科之發光層予 此處,本發明可使用之發出藍 二苯乙烯基苯衍生物、鸡二唑 f先之舍光材料可列舉 ,基口卡口坐衍生物、聚對伸苯基衍聚合物、聚乙 中以高分子材料之聚乙烯基味。坐2承知竹生物等,其 物、聚芴衍生物等為特佳 物、聚對伸苯基衍生 ,發出綠色=於此。 丑素衍生物、及其聚合物、 舉喳吖酮衍生物、香 聚芴衍生物等,其中以高分鉍2苯基伸乙烯基衍生物、 何生物、聚芴衍生物等為佳,;、〃之聚對伸苯基伸乙烯基 更且,發出紅色登光之發非特別限定於此。 噻吩化合物及其聚合物、聚對=可列舉香豆素衍生物, 噻吩衍生物、聚易衍生物等,=基伸乙烯基衍生物、濟 本基伸乙烯基衍生物、聚噻二以高分子材料之聚對小 佳,但並非特別限定於此。订生物、聚芴衍生物等為 \\326\2d-\90-ll\90123579.90123579.ptd Page 28 555830 V. Description of the invention (26) The fluorescent light emitted by the material has a longer wavelength. Therefore, according to the above reasons, the light-emitting material in the layer and the light-emitting material in the second light-emitting layer emit light in the third emission ^. The possibility is low and the occurrence of color mixing can be reduced. It is better to apply the light-emitting material that forms the light-emitting layer sequentially in order to emit light at a wavelength first. Specifically, the first color portrait, the luminous material is used to emit red. When using this kind of luminous material, the luminous material light material, but the order of color, green, and red will contain this order, that is, blue to coat, Formation is better. The light-emitting layer of Ermaxianke is here. Examples of the light-emitting materials that can be used in the present invention to emit blue stilbene benzene derivatives and chicken diazole f are: basal bayonet derivatives, polycondensation Polyethylene-based polymers, polyethylene, and polyethylene-based odor of polymer materials. Sat 2 knows bamboo creatures, etc., and its derivatives and polyfluorene derivatives are particularly good, derived from poly-p-phenylene, which emits green = here. Uglysin derivatives, polymers thereof, such as acridone derivatives, polyfluorene derivatives, etc. Among them, high-bismuth 2phenyl vinylidene derivatives, any biological, polyfluorene derivatives, etc .; The poly-p-phenylene vinylene of fluorene is not particularly limited to this. Thiophene compounds and their polymers, poly-pairs = coumarin derivatives, thiophene derivatives, poly-derivatives, etc., = vinylidene derivatives, zibenyl vinylidene derivatives, polythiodiene polymer materials The gathering is for Xiaojia, but it is not limited to this. Set creatures, polyfluorene derivatives, etc. as \\ 326 \ 2d- \ 90-ll \ 90123579.
Ptd 第29 555830 五、發明說明(27) (其他之有機EL層) 1. 電荷輸送層 亦可列舉電子注入層做 入層包含空穴注入層和/ $、。本t明之有機EL層。此電荷注 11 _ 4 0 11號公報所記载般子/主入層。例如特開平 可,並無特別限定。 右為EL凡件所一般使用者即 尚’構成上述層之發光 送材料可分別單獨使用,:、空穴輸送材料、或電子輪 之層可為一層或數層。 ’、可此合使用。含有相同材料 2. 電極層 於本發明中,電極屑 將基體上先設置之電極層稱:】E—L 用者則無限定, 層後所設置之電極層稱為第二電極層。:此於形成有機EL 極和陰極所構成,且陽極二 二電極層為由陽 明’陽極以易注入空穴且:力=明或半透 又’亦可混合複數之材料。任何電極U =料為佳。 者為佳’且—般為使用金屬材料,並且使用J阻儘可能小 化合物均可。 使用有機物或無機 較佳之陽極材料可列舉例如ίτ〇、 陰極材料可列舉例如•合:、金。較佳之 以外)、金屬,及功函數么二合金⑷U、 尤口p刀,並且防止於 90123579.ptd 第30頁 555830 五 '發明說明(28) 不要部分之發光短路, 亦可。如此處理下,可 且可取得長壽命且安定 如通常所知般,例如 左右膜厚之圖型, 予以圖型化時,期望絕 小之情況,形成1 // m以 得不會被乾式钱刻所損 厚。 ' iJSL元件 其次,說明關於本發 有以下說明的三個實施 造方法進行製造。以下 (第一實施態樣) 預先σ又置絕緣層做為發光八 減低元件短路¥ m 1 +邻刀開口 發光之元件寺所造成之缺陷,並 化性之樹脂材料等形成 t以本务明之乾式蝕刻將 緣層為具有齡彳4 钱EL層 上、例如】5】“生,於而"生 宝為佳,且之膜厚,使 。為l且更佳為形成2〜之膜 件。本發明之盯元件為具 悲樣,其均可根據上述EL元件之制 ,說明各實施態樣。 衣 本發明之EL元件的第一實施態樣為具有至少一声經 化之有機EL層的EL元件,其特徵為不具有間隔壁、辅助 型化之構成物及輔助圖型化之表面處理之任何一者。回 本實施態樣之EL元件儘管具有經圖型化之有機EL層,但 仍然不具有間隔壁、輔助圖型化之構成物及輔助圖^化: 表面處理之任何一者。因此,具有利於費用性之優點。 於本實施態樣中,上述有機EL層較佳以無法經殿積法形 成的高分子材料予以形成。又’上述有機EL層特別以必^ 圖型化之發光層為佳。 ' 關於其他構成,因為同於上述EL元件製造方法中所說明Ptd No. 29 555830 V. Description of the invention (27) (Other organic EL layers) 1. Charge transport layer The electron injection layer can also be cited as the injection layer, which includes a hole injection layer and / $. This organic EL layer. This charge is described in JP 11 _ 4 0 11 as described above. For example, Japanese Patent Application Laid-Open No. is not particularly limited. On the right is the general user of EL components. The light-emitting materials constituting the above-mentioned layers can be used separately, and the layer of the hole-transporting material or the electron wheel can be one or more layers. ', Can be used together. Contains the same material 2. Electrode layer In the present invention, the electrode chip refers to the electrode layer first provided on the substrate:] E-L The user is not limited, and the electrode layer provided after the layer is called the second electrode layer. : This is formed by forming an organic EL electrode and a cathode, and the anode electrode layer is made of a positive electrode, and the anode is easy to inject holes, and the force is bright or semi-transparent, and multiple materials can be mixed. Any electrode U = material is better. It is better to use a metal material and to use a compound with as small a resistance as possible. Organic or inorganic preferred anode materials include, for example, Γτ〇, and cathode materials include, for example, He :, gold. Other than the best), metals, and work function alloys U, U, and P knives, and to prevent 90123579.ptd page 30 555830 5 'Invention description (28) Do not part of the light-emitting short circuit, it is also possible. In this way, long life and stability can be obtained and generally known. For example, when the pattern of the left and right film thickness is patterned, it is expected to be extremely small, forming 1 // m to prevent it from being dried. Lost thickness at the moment. 'iJSL device Next, the three manufacturing methods described below regarding the present invention will be described. The following (first embodiment) In advance, an insulating layer is provided in advance to reduce the short circuit of the light emitting element. M 1 + The defect caused by the light emitting element temple adjacent to the knife opening is formed by the combination of resin materials, etc. Dry etch the edge layer on the EL layer with a thickness of 4 mm. For example, [5] "birth, and" Sheng Bao is better, and the film thickness is so that it is 1 and more preferably to form a film of 2 ~ The staring element of the present invention is a sad one, and all of them can be described according to the above-mentioned EL element system. The first embodiment of the EL element of the present invention is an organic EL layer having at least one sounding organic EL layer. The EL element is characterized by not having any partition wall, auxiliary structure, and surface treatment to assist patterning. Although the EL element in this embodiment has a patterned organic EL layer, There is still no partition wall, auxiliary patterning structure, and auxiliary patterning: surface treatment. Therefore, it has the advantage of being cost-effective. In this embodiment, the organic EL layer is preferably unable to be used. Polymer materials formed by the Dianji method And 'the organic EL light emitting layer is particularly preferably of the pattern layer will ^.' Other configuration, the same as in the above-described EL element manufacturing method as described
90123579.ptd 第31頁 555830 五、發明說明(29) 者’故於此處省略說明。 (第二實施態樣)90123579.ptd Page 31 555830 V. The description of the invention (29) ’Therefore, the description is omitted here. (Second Implementation Aspect)
本發明之EL元件的第二實施態樣 層的EL元件,其特徵為上述有機=少-層有機EL 層,於上述圖型化_ > #θ為!圖型化之發光 U么九層遺知部所形成 之寬度為15/ζηι以下、較佳為1〇一 寺::均勻區域 下。此處,所謂「膜厚不均句 =為7㈣以 根據如上述EL元件製造方法所得域。 平版印刷法將發光層予以圖型 ::,經由光學 墨法等所圖型化者,可婉由姓判f 务光層為不同於喷 勻性高且發光戶月、真#、t /條件而自由地控制厚度均 域,即本發明所謂之膜 了调1邊緣£ 竣A吉☆ β处 、子不句勻區域的寬度,且可作成邊 緣為直立形狀,即膜厚不均勻區 :成遺 錐狀,即膜厚不均勾區域之寬度變寬;:;::’或邊緣為 均ί2面、,ΐ!、經由噴墨法所圖型化之發光層的膜厚不 構成此類圖;:==:7予寬度。因此’難以將 ιμ ^ ^ 风谷色之畫素予以緻密地配置。 此處,圖3為示出本發明EL元 句區域,即邊端部分層中的膜厚不均 化之發光層的膜厚不均勻區域。出/則經由喷墨法所圖型 經由喷墨法所圖型化之發:二邊此些圖所闡明般,先前 ί;2/:本發明件發光層中之膜厚不均勾區域之寬 第32頁 \\326\2d-\90.11\90123579.ptd 555830 五、發明說明(30) 本實施態樣之EL元件,因為發 區域寬度為在上述值以了,丄t邊緣部膜厚不均勻 π脾久蚩^ 可縮小各晝素間的距離,萨 此可將各晝素敏也、配置,具有 一。 错 EL元件之優點。 成可取付冋。口貝晝像之 於本實施態樣中,形成於氺 ^ ^ L7 ^ ^ ΛΑ Jk - X光層之材料較佳為無法以殿積 法予以形成的有機高分子材料。 知 如此取得全色彩書像為苴 ^先層至 > 為二層, 材料等因與上述心=广關於其他構成、 明。 干之衣&方法相同,故於此處省略說 (第三實施態樣) 士發明之EL元件的第三實施The EL element of the second embodiment of the EL element of the present invention is characterized in that the above-mentioned organic = few-layer organic EL layer is patterned in the above-mentioned pattern_ ># θ is! The width of the patterned light-emitting U-nine-layered knowledge section is 15 / ζηι or less, and preferably 10-1. Temple :: under uniform area. Here, the so-called "film thickness unevenness sentence = 7" is used to obtain the domain according to the EL element manufacturing method as described above. The lithography method is used to pattern the light-emitting layer :: Those patterned by the optical ink method can be used The name of the light layer is different from the condition of high spray uniformity and luminous household, true #, t / conditions, and freely control the thickness uniform area, that is, the so-called film of the present invention is adjusted by 1 edge. The width of the uneven region can be made into an upright edge, that is, the uneven thickness of the film: the cone shape, that is, the width of the uneven thickness of the film area becomes wider; ::: 'or the edge is uniform 2 The thickness of the light-emitting layer patterned by the inkjet method does not constitute such a picture;: ==: 7 pre-width. Therefore, it is' difficult to make dense pixels of ιμ ^ ^ wind valley color densely. Configuration. Here, FIG. 3 shows the EL clause region of the present invention, that is, the film thickness uneven region of the light emitting layer with uneven film thickness in the edge portion layer. The development of the pattern by the inkjet method: as illustrated in these figures on the two sides, previously; 2: the uneven thickness of the film in the light-emitting layer of the present invention The width of the field page 32 \\ 326 \ 2d- \ 90.11 \ 90123579.ptd 555830 V. Description of the invention (30) Since the width of the EL element in this embodiment is at the above value, the edge film The thickness is uneven and the spleen is long. It can reduce the distance between the diurnal elements, so it can be configured and equipped with one. It has the advantages of the wrong EL element. It is advisable to pay. The daily image of mussels is in this implementation. In the aspect, the material formed on the 氺 ^ ^ L7 ^ ^ ΛΑ Jk-X-ray layer is preferably an organic polymer material that cannot be formed by the Dianji method. It is known that obtaining a full-color book image in this way is 苴 ^ first layer to & gt It is the second layer, and the materials are the same as the above. Since the other structures and instructions are the same. Dry clothes & methods are the same, so the third embodiment is omitted here.
層的EL元件,上诫右嫵PT麻达 Ν ^ ^ ^ 層有機EL μ ^ ^ ^有機虬層為可發光出數色之圖型化的數 續心九層,發光出不同顏色 J数 ⑽以下、較佳為2。=%=1 離為30 的EL元件。 寺侄為1 5 // m以下為其特徵 所ί成ί ΐ ΐ謂發光層間之距離為表示圖型化之各發光芦 所構成之晝素間的距離。 合心尤層 發光層之濕式圖型化中最熟知 分的均勻性低、、u根據膜邊緣部 的濕潤擴展範圍U ΐ L Ϊ不安定、而為了規定油墨 型的形成# Ϊ』 性的斜坡並進行撥墨性圖 40丄ΓΛ4:圖型化發光層間的距離-般通常至少設置為 件的Η创/ 晝素齒距小,例如42㈣齒距以下之元The layered EL element is on the right, PT PT Ma Da N ^ ^ ^ layer organic EL μ ^ ^ ^ organic layer is a patterned number of continuum nine layers that can emit several colors, emitting different colors J number ⑽ Hereinafter, 2 is preferable. =% = 1 EL element with a distance of 30. The nephew of the temple is 1 5 // m is its characteristic. Therefore, the distance between the light-emitting layers is the distance between the daylight elements composed of the light-emitting reeds that represent the pattern. The uniformity of the wet pattern of the luminous layer of the concentric layer is low. The uniformity is low, and u depends on the wet expansion range of the edge of the film. U ΐ L Ϊ is unstable, and it is necessary to define the formation of the ink type. # Ϊ Slope and ink repellency Figure 40 丄 ΓΛ4: The distance between the light-emitting layers of the pattern-usually set at least as small as the wound / day prime tooth pitch, such as the element below 42㈣ tooth pitch
忏的圖型化並不可能。 ,< 7L 另一方面’本實施態樣之EL元件,為可經由濕式製膜製 555830 五、發明說明(31) 造高分子或低分子發光層的EL元件,因為發光層的圖型化 精確度高,又,圖型化之發光層的邊緣部分為與經由乾把 所形成者不同,並且使用浴解或I虫刻除去不要部分之手 法,故發光層之膜均勻性高,且由圖型化終端例如具有僅 傾斜5 // m左右的區域。因此,於製作全色彩顯示器之情彤 :,可縮小發光部分之各畫素間的距離,如此可令開口^ 變大。又,因為可縮小晝素間的距離,故各畫素可緻密地 S己置。忏 's patterning is not possible. < 7L On the other hand, the EL element of this embodiment is a 555830 that can be made by wet film formation. 5. Description of the invention (31) EL element made of high molecular or low molecular light emitting layer, because the pattern of the light emitting layer The precision of the light-emitting layer is high, and the edge portion of the patterned light-emitting layer is different from that formed by dry-drying, and the method of removing unnecessary parts by bathing or worming is used, so the film uniformity of the light-emitting layer is high, and The patterned terminal has, for example, an area inclined only about 5 // m. Therefore, in making a full-color display, the distance between the pixels of the light-emitting part can be reduced, which can make the opening ^ larger. In addition, since the distance between day pixels can be reduced, each pixel can be densely set.
層與第二實施態樣同樣地,於本實施態樣中亦以形成發光 &之材料較佳為無法以澱積法予以形成的有機高分子材 '成為又,發光層至少為三層,如此取得全色彩晝像為其構 方二佳。尚,關於其他構成、材料因與上述EL元件之製造 相同’故於此處省略說明。 、其他) 示述第一實施態樣、第二實施態樣及第三實施態樣 之φ —件中’至少具有基板、和上述基板上形成圖梨 〜电極声、$ 活 部八 9 和设蓋上述電極層之邊端部分及元件之非發 刀之絕緣層為其構成為佳。 如此將开^ #面 如上 风圖型狀之電極層邊緣部分以絕緣層覆蓋,The layer is the same as in the second embodiment. In this embodiment, the material that forms the light emitting & is preferably an organic polymer material that cannot be formed by the deposition method. The light emitting layer is at least three layers. It is the second best formula to obtain full-color day images in this way. Since the other structures and materials are the same as those of the above-mentioned EL element, the description is omitted here. , Etc.) φ which describes the first embodiment, the second embodiment, and the third embodiment includes at least a substrate, and the above-mentioned substrate is formed with a picture ~ an electrode sound, a live part 8 9 and It is preferable that the non-blade insulating layer covering the edge portion of the electrode layer and the element is used for its constitution. In this way, the edge portion of the electrode layer with an opening pattern like the above is covered with an insulating layer.
二可減低元件短路等所造成之缺陷。 %處,所用 板,目I丨也 之基板若為通常EL元件中所用之玻璃等之 〜無特別限定。 X ’關於雷k 法欄所%、 極層及絕緣層’因為與上述E L元件之製造 明者相同,故於此處省略說明。Second, it can reduce the defects caused by short circuit of components. In%, the substrate used and the substrate used are not particularly limited as long as they are glass or the like used in general EL devices. X ′ is about the same as that of the EL device as described above, so its explanation is omitted here.
第34頁 555830 五、發明說明(32) (具體材料之組合) 如上述利用對於特定溶液之溶解性並且可進行本發明EL 元件圖型化之合適材料的組合例如為下。 緩衝層:聚烷基噻吩衍生物、聚苯胺衍生物 發光層:聚對伸苯基伸乙烯基衍生物、聚氟衍生物、聚 乙稀基咔嗤衍生物 光阻物:正型光阻物(酚醛清漆樹脂系) 光阻物溶劑:溶纖劑、溶纖劑醋酸酯 光阻物顯像液:有機鹼顯像液 光阻物剝離液:溶纖劑、溶纖劑酯酸酯、丙酮 發光層形成溶劑:二曱苯、曱苯 另一方面,一般所用之EL元件材料和光阻材料,例如下 列之組合並不適於本發明(但,各個材料與其他材料系之 組合乃成為合適材料)。 緩衝層:聚烧基σ塞吩衍生物、聚苯胺衍生物 發光層:具有下列構造之TPD/AU3、聚乙烯基咔唑+ 口"| 二唑衍生物+螢光色素Page 34 555830 V. Description of the invention (32) (Combination of specific materials) As described above, the combination of suitable materials that utilize the solubility in a specific solution and can pattern the EL element of the present invention is as follows. Buffer layer: Polyalkylthiophene derivative, Polyaniline derivative. Light-emitting layer: Poly-p-phenylene vinylene derivative, Polyfluoro derivative, Polyethylene carbene derivative Photoresist: Positive photoresist ( Novolac resin) Photoresist solvent: cellosolve, cellosolve acetate photoresist imaging solution: organic alkali imaging solution photoresist stripping solution: cellosolve, cellosolvate ester, acetone photoluminescence Layer-forming solvents: diphenylbenzene, xylene. On the other hand, generally used EL element materials and photoresist materials, such as the following combinations, are not suitable for the present invention (however, the combination of each material and other materials is a suitable material). Buffer layer: stilbene-based stilbene derivative, polyaniline derivative Luminous layer: TPD / AU3, polyvinylcarbazole + port " | diazole derivative + fluorescent pigment with the following structure
TPD ΝΝTPD ΝΝΝ
90123579.ptd 第35頁 555830 、發明說明(33) 〇丫〇\90123579.ptd p.35 555830 、 Instructions for Invention (33) 〇 丫 〇 \
Alq3 光阻物:正型光 光阻物溶劑:溶 光阻物顯像液: 光阻物剝離液: 号X光層形成溶劑 膜) 於本發明中,若 衍生物+螢光色素 二唑衍生物和螢光 TPD/Alq3 ,亦於光 經由光學平版印刷 而為不適當。 尚,本發明並非 例示,與本發明申 上具有相同構成, 發明之技術範圍中 【實施例】 以下示出實施例 阻物(紛酸清漆樹脂系) 纖劑、溶纖劑醋酸酯 有機鹼顯像液 溶纖劑、溶纖劑酯酸酯、丙酮 :二氯乙烷(TPD/AU3之情況為真空成 於發光層中使用聚乙烯基咔唑+㈣二唑 ,則因於光阻物之成膜、剝離時溶出 色素’故為不適當。又,於發光層使用 阻物之成膜、剝離時溶出τρΐ)及Alq3、 法之加熱工程令TPD結晶化等之理由下 =疋於上述實施形態。上述實施形態為 請專利範圍所記載之技術性思想於實質 且達成同樣之作用效果者均被包含於本 ’進一步說明本發明Alq3 photoresist: positive photoresist solvent: photoresist developer solution: photoresist stripping solution: No. X-ray layer to form a solvent film) In the present invention, if the derivative + fluorescein diazole is derived Objects and fluorescent TPD / Alq3 are also inappropriate in light via optical lithography. However, the present invention is not exemplified, and has the same structure as the present invention. In the technical scope of the invention, [Examples] The following shows examples of inhibitors (varic acid varnish resin series), fiber agents, and cellosolve acetate. Like liquid cellosolve, cellosolvate ester, acetone: dichloroethane (TPD / AU3, the vacuum is used in the light-emitting layer to use polyvinylcarbazole + fluorenediazole, because of the photoresist It is not appropriate to dissolve the pigment during film formation and peeling. In addition, the use of a barrier film for the light-emitting layer and the release of τρΐ during peeling), Alq3, and TPD crystallizing due to the heating process of the method, etc. form. The above-mentioned embodiments are intended to include the technical ideas described in the patent scope in substance and achieve the same effect. ‘This will further explain the present invention.
\\326\2d-\90-ll\90123579.ptd 第36頁 555830 五、發明說明(34) [實施例1 :發光層為單層之情況] (緩衝層之圖型化) 將3忖口、板厚丨· lmm之圖型化1了〇基板洗淨,作為本實 施例中所用之基體及第一電極層。 採集下列化學式(丨)所示之緩衝層塗佈液(聚(3, 4)乙烯 二氧基嗔吩/聚苯乙烯磺酸酯(PEDT/PSS) : Biei公司製 (Baytron P)0.5毫升,並於基體之中心部滴下,進行旋\\ 326 \ 2d- \ 90-ll \ 90123579.ptd Page 36 555830 V. Description of the invention (34) [Example 1: Case where the light-emitting layer is a single layer] (patterning of the buffer layer) The thickness of the plate and the thickness of the substrate are cleaned as the substrate and the first electrode layer used in this embodiment. Collect a buffer layer coating solution (poly (3, 4) ethylenedioxyphene / polystyrene sulfonate (PEDT / PSS)) represented by the following chemical formula (丨): 0.5 ml (Baytron P) manufactured by Biei Corporation, And drip on the center of the base
於2500rpni保持20秒鐘形成緩衝層,並於15〇。(:乾燥5分 鐘。其結果,膜厚為8 0 0 A。 採集正型光阻液(東京應化公司製;OFPR-80 0 ) 2毫升, 並於基體之中心部滴下,進行旋塗。於5〇〇rpm保持1〇秒 鐘,其後,於2 0 0 Or pm保持2 0秒鐘形成緩衝層。其結果,A buffer layer was formed at 2500 rpni for 20 seconds, and at 150 ° C. (: Drying for 5 minutes. As a result, the film thickness was 800 A. 2 ml of a positive type photoresist liquid (manufactured by Tokyo Ina Co., Ltd .; OFPR-80 0) was collected and dropped on the center of the substrate to perform spin coating. The buffer layer was maintained at 500 rpm for 10 seconds, and thereafter, it was maintained at 2000 Or pm for 20 seconds to form a buffer layer. As a result,
90123579.ptd 第37頁 555830 五、發明說明(35) 膜厚為約1 /nil。於8(TC進行30分鐘預烘烤。其後,與曝光 光罩共同安裝於定線曝光機,並對欲除去緩衝層之部^進 行紫外線曝光。以光阻物顯像液(東京應化公司製;°刀 NMD-3)顯像2 0秒鐘後並水洗,除去曝光部之光阻《物、及緩 衝層、。於120 t:後烘烤30分鐘後,以丙_將光阻物全部除 去’並於丙酮中形成任意圖型的不溶緩衝層。 (發光層的圖型化) 曰 一於緩衝層為經圖型化之基體上,採集下列化學式(2 )所 不之聚對伸苯基伸乙烯基衍生物發光高分子肫^即^之90123579.ptd Page 37 555830 V. Description of the invention (35) The film thickness is about 1 / nil. Pre-baked at 8 ° C for 30 minutes. After that, it was installed in an alignment exposure machine together with the exposure mask, and exposed to ultraviolet light at the part where the buffer layer was to be removed. Co., Ltd .; Knife NMD-3) developed after 20 seconds and washed with water to remove the photoresist and the buffer layer of the exposed part. After 120 t: 30 minutes after baking, the photoresist was cured with acrylic resin. All the substances are removed 'and an insoluble buffer layer of any pattern is formed in acetone. (Patternization of the light-emitting layer) On the substrate where the buffer layer is patterned, the unpaired pairs of the following chemical formula (2) are collected. Phenylene and vinyl derivative luminescent polymers 肫 ^^
Iwt%二甲苯溶液2毫升,並於基體中心部滴下,進行旋 塗〇Iwt% xylene solution 2 ml, dripped on the center of the substrate, and spin-coated.
—〇 (2) 於20 0〇rpm保持10秒鐘形成發光層,並於8〇它乾燥卜卜 時。其結果,膜厚為8〇〇 A。 、私集正型光阻液(東京應化公司製’· ⑽毫升, ,於,體之中心部滴下,進行旋塗。於5〇〇,保持1〇秒 鈿:、後灰2 〇 〇 0 rpm保持2 0秒鐘形成緩衝層。其結果, 膜厚為約1 // m。於8 Π;隹/ 〇 n u δ U L進仃3 0分鐘預烘烤。其後,與曝光 光^ 1 ^女t於定線曝光機’並對欲除去發光層之部分進 打東外線曝光。以光阻物顯像液(東京應化公司製;— 2 (2) The light-emitting layer was formed by holding at 2000 rpm for 10 seconds, and dried at 80 ℃. As a result, the film thickness was 800 A. Private collection of positive photoresist solution (made by Tokyo Yinghua Co., Ltd., ⑽ml, dipped at the center of the body, and spin-coated. Hold at 500 for 10 seconds. 钿:, after ash 2000 Hold the rpm for 20 seconds to form a buffer layer. As a result, the film thickness was about 1 // m. At 8 Π; 隹 / 〇nu δ UL pre-baked for 30 minutes. After that, it was exposed to light ^ 1 ^ The female t was exposed on the alignment exposure machine and exposed to the outside line. The photoresist developer solution (manufactured by Tokyo Chemical Co., Ltd .;
第38頁 555830 五、發明說明(36) NMD-3)顯像20秒鐘後並水洗,除去曝光 。(:後烘烤30分鐘後’以甲苯將除去光阻物=阻物。於90 以除去,以丙酮將光阻物全部除去,二 刀之發光層予 圖型的不溶發光層。 μ 亚於丙綱中形成任意 於90 °C乾燥1小時後,其次於所得之基體上 二電極層(上方電極)之Ca澱積成5 0 0人之厚产,2做為弟 保護層之Ag澱積成2 5 0 0 A之厚度,作成EL元又件’再將做為 所得圖型之解像度雖然依賴正型光阻物的 例為實現先前激積光罩法、喷墨法所不可能的^戶但本 形成1 0 // m之高精細線條。 $ X °可 (EL元件之發光特性的評價) 於I TO電極(第一電極層)側連接陽極、Ag電 層)側連接陰極,並且經由電源計,外加直流電流。一外力極 10V時察見發光,並可評價其並無使用光學平版印刷法= 型化所造成之發光開始電壓之惡化。又,亦未察見發Θ 率之降低。更且,經由將緩衝層予以圖型化,則可4古= 極線間的絕緣性並減少交調失真的發生率。 阿呩 [實施例2 ··發光層為三層之情況] 同實施例1將緩衝層予以圖型化。 於做為第一發光層之緩衝層被圖型化之基體上,採集聚 對伸苯基伸乙烯基衍生物發光高分子MEH-PPV 2lwt%二甲 苯溶液2毫升,並於基體之中心部滴下,進行旋塗。於 2〇〇Orpm保持10秒鐘形成發光層。其結果,膜厚為8〇〇入。 採集正型光阻液(東京應化公司製;〇FPR-80〇)2毫升, 第39頁 90123579.ptd 555830Page 38 555830 V. Description of the invention (36) NMD-3) After developing for 20 seconds and washing with water, remove the exposure. (: After 30 minutes of post-baking, the photoresist will be removed with toluene = resistor. At 90, the photoresist will be removed with acetone, and the two-knife light-emitting layer will be a patterned insoluble light-emitting layer. In Cinggang, after drying at 90 ° C for 1 hour, the second electrode layer (upper electrode) on the obtained substrate was deposited by Ca to a thickness of 500 people, and 2 was used as a protective layer of Ag deposition. The thickness is 2 5 0 0 A, and the EL element is created. The resolution of the obtained pattern will be used. Although it depends on the positive photoresist, it is impossible to realize the previous polarizing mask method and inkjet method. The user forms a high-definition line with a length of 10 // m. $ X ° may (evaluation of the light-emitting characteristics of the EL element) The anode is connected to the I TO electrode (first electrode layer) side, and the cathode is connected to the Ag electrical layer. Apply DC current through the power meter. Luminescence was observed at an external force of 10V, and it was evaluated that it did not use optical lithography = deterioration of the luminescence start voltage caused by the type. Also, no decrease in the rate of Θ was observed. Furthermore, by patterning the buffer layer, the insulation between the polar lines can be reduced, and the incidence of intermodulation distortion can be reduced. A Yi [Example 2 ········································································································································································································································································· 2 The light-emitting layer is three On the substrate having the patterned buffer layer as the first light-emitting layer, 2 ml of a 2 lwt% xylene solution of a poly-p-phenylene vinylene derivative light-emitting polymer was collected, and dropped on the center of the substrate. Perform spin coating. A light-emitting layer was formed by holding at 2000 rpm for 10 seconds. As a result, the film thickness was 800 mm. Collect 2 ml of positive photoresist solution (manufactured by Tokyo Yinghua Co., Ltd .; 〇FPR-80〇), p. 39 90123579.ptd 555830
並於基體之中心部滴下,進行旋塗。於5〇〇rpm保持ι〇秒 叙,其後,於2 0 0 Orpm保持20秒鐘形成光阻層。其結果, 膜厚為約1 //m。於80 °C進行預烘烤3〇分鐘。其後,與曝 光罩共同安裝於定線曝光機,並對第一色發光部以^ = f去發光層之部分進行紫外線曝光。以光阻物顯像液(東 斤、應化公司製;NMD-3)顯像2〇秒鐘後並水洗,除去曝光 之光阻物。於90 C後烘烤30分鐘後,以曱苯除去已脫 :物部士之發光層,取得第一發光部為經光阻物所保護且 第一、第二發光部之緩衝層為露出的基體。 將做為第二發光層之聚對伸苯基伸乙烯基衍生物發光 分子MEH - PPV之Iwt%二曱苯溶液採集2毫升,於基體之中心 部滴下,進行旋塗。於2〇〇 〇rpm保持1〇秒鐘形成發光層。 其結果,膜厚為8 0 0 A。 曰 採集正型光阻液(東京應化公司製;〇FpR-8〇〇)2毫升, 並於基體之中心部滴下,進行旋塗。於5〇〇rpm保持1〇秒 鐘,其後,於20Q〇rpm保持20秒鐘形成光阻層。其結果, 膜厚為約1 。於80 T:進行預烘烤3〇分鐘。盆後,°與曝光 光罩共同安裝於定線曝光機,並對第一、第二發光部=外 之?去發光層之部分進行紫外線曝光。以光阻物顯像液 (東π應化公司製;NMD-3)顯像20秒鐘後並水洗,除去曝 光部之光阻物。於90 °C後烘烤30分鐘後,以曱苯除去已+脫 ^光阻物部分之發光層,取得第一及第二發光部為經光阻 物所保護且第三發光部之緩衝層為露出的基體。 將做為第三發光層之聚對伸苯基伸乙烯基衍生物發光高It was dropped on the center of the substrate and spin-coated. The photoresist layer was maintained at 500 rpm for 100 seconds, and thereafter, it was maintained at 2000 rpm for 20 seconds. As a result, the film thickness was about 1 // m. Pre-bake at 80 ° C for 30 minutes. Thereafter, it is installed together with the exposure mask on an alignment exposure machine, and the first light-emitting portion is exposed to ultraviolet light at a portion where the light-emitting layer is removed by ^ = f. Photoresist developing solution (manufactured by Dongjin, Yinghua Co., Ltd .; NMD-3) was developed for 20 seconds and washed with water to remove the exposed photoresist. After baking at 90 C for 30 minutes, the stripped light layer was removed with toluene. The first light emitting part was protected by a photoresist and the buffer layers of the first and second light emitting parts were exposed. Substrate. 2 ml of a 1 wt% dioxin solution of the poly-p-phenylene vinylene derivative light-emitting molecule MEH-PPV as the second light-emitting layer was collected, dropped on the center of the substrate, and spin-coated. A light-emitting layer was formed by holding at 2000 rpm for 10 seconds. As a result, the film thickness was 800 A. A 2 ml portion of a positive type photoresist (manufactured by Tokyo Yinghua Co., Ltd .; 0FpR-800) was collected, dropped on the center of the substrate, and spin-coated. It was maintained at 500 rpm for 10 seconds, and thereafter, it was maintained at 20 rpm for 20 seconds to form a photoresist layer. As a result, the film thickness was about 1. At 80 T: Pre-bake for 30 minutes. After the basin, ° and the exposure mask are installed on the alignment exposure machine, and the first and second light-emitting parts = outside? The light-emitting layer is removed for UV exposure. It was developed with a photoresist developing solution (manufactured by Toyo Ina Co., Ltd .; NMD-3) for 20 seconds and washed with water to remove the photoresist in the exposed part. After baking at 90 ° C for 30 minutes, the light-emitting layer of the + photoresist part was removed with toluene, and the first and second light-emitting parts were protected by the photoresist and the third light-emitting part was a buffer layer. For the exposed substrate. Poly-p-phenylene vinylene derivative to be used as the third light-emitting layer
555830 五、發明說明(38) 分子MEH-PPV之Iwt%二曱苯溶液採集2毫升,於基體之中心 部滴下,進行旋塗。於2 0 0 〇rpin保持10秒鐘形成發光層。 其結果,膜厚為800A。 採集正型光阻液(東京應化公司製;〇FPR —8〇〇)2毫升, 並於基體之中心部滴下,進行旋塗。於5 〇 〇rpm保持1 〇秒 鐘,其後,於2 0 0 Or pm保持20秒鐘形成光阻層。其結果, 膜厚為約1 //m。於8 Ot進行預烘烤30分鐘。其後,與曝 光罩共同女I於疋線曝光機,並對第一至第三發光部二外 之欲>除去發光層之部分進行紫外線曝光。以光^物顯像卜 (東京應化公司製;NMD-3)顯像20秒鐘後並水洗,除去曝 光部之光阻物。於90 r後烘烤30分鐘後,以曱苯除去已* ^光阻物部分之發光層,取得第一至第三發光 物所保護之基體。 巧尤Ra 於9 0 °C乾燥1小時後,其次於所得之基體上,將做 二電極層(上方電極)之Ca澱積成5〇〇 A之厚度, 保護層之Ag澱積成25 00 A之厚度,作成EL元件。 為 二圖型2解像度雖然依賴正型光阻物的解像力 貝現先丽澱積光罩法、噴墨法所不可能的解像度 化成1 0 // m之高精細線條。 τ555830 V. Description of the invention (38) Collect 2 ml of an Iwt% dibenzobenzene solution of the molecular MEH-PPV, drip it on the center of the substrate, and perform spin coating. The light-emitting layer was formed by holding at 2000 rpin for 10 seconds. As a result, the film thickness was 800A. 2 ml of a positive type photoresist solution (manufactured by Tokyo Yinghua Co., Ltd .; OFPR-800) was collected, dropped on the center of the substrate, and spin-coated. It was maintained at 500 rpm for 10 seconds, and thereafter, it was maintained at 2000 Or pm for 20 seconds to form a photoresist layer. As a result, the film thickness was about 1 // m. Pre-bake at 8 Ot for 30 minutes. Thereafter, the first and the third light-emitting portions except the light-emitting layer were exposed to ultraviolet rays by co-existing with the exposure mask on a ray exposure machine. It was developed with a light-emitting material (manufactured by Tokyo Inka Co., Ltd .; NMD-3) for 20 seconds and washed with water to remove the photoresist in the exposed part. After baking at 90 r for 30 minutes, the light-emitting layer of the photoresist part was removed with toluene to obtain the substrates protected by the first to third light-emitting substances. After drying at 90 ° C for 1 hour, Qiaoyou Ra was followed by depositing Ca as a two-electrode layer (upper electrode) to a thickness of 500 A, and Ag of a protective layer to 25 00 on the obtained substrate. The thickness of A is an EL element. Although the resolution of the two-picture type 2 depends on the resolution of the positive photoresist, the resolution that is impossible with the deposition mask method and the inkjet method is reduced to a high fine line of 1 0 // m. τ
(EL元件之發光特性的評價) I 声極(第一電極層)側連接陽極、“電極(第二電朽 曰)側連接陰極,並且經由電源計,外加 極 益使用光與平版察見發光’並可評價其並 用先于千版印刷法圖型化所造成之發光開始電屋之惡 \\326\2d-\90-]]\90]23579. ptd 第41頁(Evaluation of the light-emitting characteristics of the EL element) I The anode (first electrode layer) side is connected to the anode, and the "electrode (second electrode)" side is connected to the cathode. 'Evaluate the evil of the electric house and use it to emit light caused by patterning before the thousand printing method. \\ 326 \ 2d- \ 90-]] \ 90] 23579. Ptd page 41
555830 五、發明說明(39) 化。又,亦未察見發光效率之降4 父目周失真 予以圖型化,則可提高陽極線間的二更且’經由將緩衝芦 的發生率。 、力緣性並減少 曰 [實施例3 :溶劑之變更] 除了於發光層使用下述化學式(3 唑、於發光層溶劑使用曱苯以外,所示之聚乙烯基咔 件。 同貫施例1製作E L分 *-( CH2-CH )ίΓ- 兀 Ν、 ⑶ 所得圖型之解像度雖然依賴 例為實現先前澱積光罩法、噴黑^阻物的解像力,但本 形成1 0 # m之高精細線條。、土 /斤不可能的解像度。可 (EL元件之發光特性的評價) 於ITO t極(第-電極層)側連接陽極、心電 層)側連接陰極,並且錄士 # 弟一電極 1 5 V時察見發光,並可坪宜’甘、:蚀二=直流電流°外加 型化所造成之發光開始?/之並 率之降低。更且,經由將;:亦未察見發光效 極螝的頌# ht ¥ Λ由將衝層予以圖型化,則可提高陽 「才線間的、,“性並減少交調失真的發生率。 [實施例4 :經由乾式餘刻予以圖型化] (緩衝層之製膜) _555830 V. Description of invention (39). Also, no decrease in luminous efficiency was observed. Patterning the distortion around the eyes can increase the incidence of the second change between the anode lines and through buffering the reed. [Example 3: Change of Solvent] Except for the use of the following chemical formula (3 azole, xylene as the solvent of the light-emitting layer), a polyethylene-based member shown in the following is used. 1 Production of EL points *-(CH2-CH) ΓΓ- Ν, ⑶ Although the resolution of the pattern obtained depends on the example to achieve the resolution of the previous deposition mask method, black spray ^ obstruction, but this form of 1 0 # m High-definition lines. Impossible resolution. (Evaluation of the light-emitting characteristics of the EL element) Connect the cathode to the ITO t-pole (the -electrode layer) side and the cathode, and record ## 弟Luminescence was observed at one electrode at 15 V, and can Pingyi'gan, Eclipse = DC current ° be caused by the addition of type? / The reduction of the merger rate. In addition, through :: I have not seen the luminous effect extremely chanting # ht ¥ Λ by patterning the punching layer, you can improve the "sense between the lines," and reduce the occurrence of intermodulation distortion rate. [Embodiment 4: Patterning by dry-cutting] (film formation of buffer layer) _
Mil 第42頁 90123579.ptd 555830 五、發明說明(40) 將3对口、板厚丨.imm之圖型化17()基板洗淨,作為 施例中所用之基體及第一電極層。採集緩衝層塗佈液貫 (Biel公司製;Baytr〇n p(上述化學式(1)所示 升,並於基體之中心部滴下,進行旋塗。於25〇〇r_ = 20秒鐘形成層。其結果,膜厚為80 0 A。 ’、持 (發光層之圖型化) 於緩衝層被圖型化之基體上,採集聚對伸 ^ 衍生物發光高分子MEH-PPVilwt%二甲苯溶液2二乙烯基 基體之中心部滴下,進行旋塗。於2〇〇 ^ ’並於 成層。其結果,膜厚為8 0 0 A。 ⑽保持1〇秒鐘形 採集正型光阻液(東京應化公司製;〇 並於基體之中心部滴下,進行旋塗。於5〇〇r =升’ 鐘,其後,於20 00rpm保持20秒鐘形成層。其^士保持10秒 為約1 。於80 t:進行預烘烤3〇分鐘。其後、,、D ’膜厚 ^同女裝於定線曝光機,並對欲除去發光層之二〔光光罩 卜=曝光。以光阻物顯像液(東京應化公司曰。:進行紫 仏20秒鐘後並水洗,除去曝光部之光阻物。、,NMD~3)顯 於12(TC後烘烤30分鐘後,以15〇毫托 =率進行20分鐘氧等離子體處理。光阻 且以150W<Mil Page 42 90123579.ptd 555830 V. Description of the invention (40) Wash the patterned 17 () substrate with 3 pairs of holes and plate thickness 丨 .mm as the substrate and the first electrode layer used in the example. A buffer layer coating solution (manufactured by Biel Corporation; Baytrón (the above-mentioned chemical formula (1)) was collected and dropped on the center portion of the substrate and spin-coated. A layer was formed at 2500 r_ = 20 seconds. As a result, the film thickness was 80 0 A. ', holding (patterning of the light-emitting layer) on the substrate where the buffer layer was patterned, collecting a poly-elongation derivative of the light-emitting polymer MEH-PPVilwt% xylene solution 22 The central part of the vinyl substrate was dropped and spin-coated. The layer was formed at 2000 Å. As a result, the film thickness was 800 A. ⑽ The positive photoresist was collected for 10 seconds. Manufactured by the company; and dripped at the center of the substrate and spin-coated. At 500 r = liter's, it was then kept at 2000 rpm for 20 seconds to form a layer. It was held for 10 seconds to about 1. 80 t: Pre-baking for 30 minutes. After that, D, film thickness ^ is the same as that of women's wear on an alignment exposure machine, and the second part of the light-emitting layer to be removed (light mask = exposure. Photoresist Developer solution (Tokyo Yinghua Co., Ltd .: After purifying for 20 seconds and washing with water to remove the photoresist in the exposed area. ,, NMD ~ 3) was shown at 12 (30 minutes after TC baking) After to 15〇 rate = mTorr for 20 minutes and at an oxygen plasma treatment resist 150W <.;
發光層厚5 立以μ ,从y贫八 勿因為比緩衝展R 緩衝;ί上:令光阻物未保護部分之發光/ h層被剝離,並且剝出ΙΤ0電極。取^先層和 光阻物所保護之基體。 务光部為經 t 2所仔之基體上將緩衝層塗佈液旋塗,取π» η η 將做為第二發光層之聚對伸苯基伸乙歸之基^ 第43頁 90l23579.ptd 555830The thickness of the light-emitting layer is 5 μm, which is 8 times less than y. Do not buffer because of the buffer; R: Make the light-emitting / h layer of the unprotected part of the photoresist be peeled off, and peel off the ITO electrode. Take the substrate protected by the first layer and the photoresist. The light department is spin-coated with a buffer layer coating solution on the substrate prepared by t 2, and π »η η will be used as the second light-emitting layer of p-phenylene and ethylene. ^ Page 43 90l23579.ptd 555830
五、發明說明(41) 生物發光高分子MEH-PPV之lwt%二曱苯溶液採集2毫升,並 於基體之中心部滴下,進行旋塗。於2 0 0 0 r pm保持1 〇秒鐘 形成層。其結果,膜厚為8 〇 〇 A。 採集正型光阻液(東京應化公司製;0FPR-80 0 ) 2毫升, 並於基體之中心部滴下,進行旋塗。於5 0 0 r p m保持1 〇秒 鐘,其後,於2 0 0 0rpm保持20秒鐘形成層。其結果,膜厚 為約1 /zm。於8 0 °C進行預烘烤30分鐘。其後,與曝光光罩 共同安裝於定線曝光機,並對第一色及第二色發光部以外 之欲除去發光層之部分進行紫外線曝光。以光阻物顯像液 (東京應化公司製;NMD-3)顯像20秒鐘後並水洗,除去曝 光部之光阻物。 μ “ 於120 t後烘烤30分鐘後,以15〇毫托之壓力且以“㈣之 功率進行2 0分鐘氧等離子體處理。光阻物因為比緩衝層及 發光層厚5倍以上,故僅令光阻物未保護部分之發光層曰和 緩衝層被剝離,並且剝出ITO電極。取得第一及第二發光 部為經光阻物所保護之基體。 x ^所得之基體上將緩衝層塗佈液旋塗,取得8〇〇A之緩 ,將做為第三發光層之聚對伸苯基 =:光:分子腦-PPV以wt%二甲苯溶液採#2毫升 之:心部滴下,進行旋塗。於2_r 形成層。其結果,膜厚為8 0 〇 A。 Ϊ ί ί ^ ί^ 51 t ; 〇Ρ^-8〇〇)2 ^ ^ ^ 鐘:2 ^ ^ ° W ,進仃旋塗。於500rpm保持1 0秒 ,'後 Ρ1Ώ保持2G秒鐘形成層。其結果,膜厚 響V. Description of the invention (41) 2 ml of a lwt% dibenzobenzene solution of a bioluminescent polymer MEH-PPV was collected and dropped on the center of the substrate to perform spin coating. Hold at 2000 r pm for 10 seconds to form a layer. As a result, the film thickness was 800 A. 2 ml of a positive type photoresist solution (manufactured by Tokyo Yinghua Co., Ltd .; 0FPR-80 0) was collected, dropped on the center of the substrate, and spin-coated. It was maintained at 500 r pm for 10 seconds, and thereafter, it was maintained at 2000 rpm for 20 seconds to form a layer. As a result, the film thickness was about 1 / zm. Pre-bake at 80 ° C for 30 minutes. Thereafter, it is installed in an alignment exposure machine together with an exposure mask, and the portions other than the light emitting portions of the first and second colors to be removed from the light emitting layer are exposed to ultraviolet rays. It was developed with a photoresist developer (manufactured by Tokyo Inka Co., Ltd .; NMD-3) for 20 seconds and washed with water to remove the photoresist in the exposed part. μ "After baking for 120 minutes at 120 t, an oxygen plasma treatment was performed at a pressure of 150 mTorr and a power of 20 minutes for 20 minutes. Since the photoresist is 5 times thicker than the buffer layer and the light emitting layer, only the light emitting layer and the buffer layer of the unprotected portion of the photoresist are peeled off, and the ITO electrode is peeled off. The first and second light emitting parts are obtained as a substrate protected by a photoresist. x ^ The buffer layer coating solution was spin-coated on the obtained substrate to obtain a relief of 800 A, which will be used as the third light-emitting layer of poly-p-phenylene =: light: molecular brain-PPV in wt% xylene solution Take # 2 ml: drip the heart and spin-coat. A layer is formed at 2_r. As a result, the film thickness was 800 A. Ϊ ί ^ ί ^ 51 t; 〇Ρ ^ -8〇〇) 2 ^ ^ ^ Clock: 2 ^ ^ ° W, into the spin coating. Hold at 500 rpm for 10 seconds. After that, P1Ώ is held for 2 G seconds to form a layer. As a result, the film thickness
mm ill _mm ill _
第44頁 W326\2d>\9〇-n\9〇i23579.ptd 555830Page 44 W326 \ 2d > \ 9〇-n \ 9〇i23579.ptd 555830
為約1 //m。於8 0 °C進行預烘烤30分鐘。其後,與曝、,、, 共同安裝於定線曝光機,並對第一色至第三色發^ =光罩 之欲除去發光層之部分進行紫外線曝光。 二°以外 ^ . 兀阻物辱i德、、右 〔東京應化公司製;NMD-3)顯像20秒鐘後並水哚,^ 1豕/夜 光部之光阻物。 *去曝 於12 0 °C後烘烤30分鐘後,以150毫托之壓力且、 功率進行20分鐘氧等離子體處理。光阻物n50W< 發光層厚5倍以上,故僅令光阻物未保護部分、之^衝層及 緩衝層被剝離。取得第一至第三發光部為經^>層和 之基體。其後,以丙酮除去全部的光阻物、。先卩物所保謨 於1 〇 0 C乾燥1小時後,其次,於所得之其辦 第二電極層(上方電極)之Ca澱積成5〇 〇 A之土广’將做為 為保護層之Ag澱積成2 5 0 0 Λ之厚度,製作Ρτ予-又,再將做 (EL元件之發光特性的評價) 、 凡件。Is about 1 // m. Pre-bake at 80 ° C for 30 minutes. Thereafter, it is installed together with the exposure, exposure, exposure, exposure, exposure, exposure, exposure, and exposure, and UV exposure is performed on the portions of the first to third colors where the light emitting layer is to be removed. Beyond 2 ° ^. Obstacles are inferior, right and right [made by Tokyo Yinghua Co., Ltd .; NMD-3) After 20 seconds of development, the photoresist is a photoresist at 豕 1 夜 per night. * After exposure to 120 ° C for 30 minutes, oxygen plasma treatment was performed at a pressure of 150 mTorr and power for 20 minutes. The photoresist n50W < light-emitting layer is more than 5 times thick, so only the unprotected part of the photoresist, the punching layer, and the buffer layer are peeled off. The first to third light-emitting portions are obtained as a substrate having a layer and a layer. Thereafter, all the photoresist was removed with acetone. After the first time of drying at 1000 C for 1 hour, the second electrode layer (upper electrode) of Ca obtained by the second electrode layer (upper electrode) was deposited to 5000 A. As a protective layer Ag is deposited to a thickness of 2 500 0 Λ, and Pτ is made again, and then (evaluation of the light-emitting characteristics of the EL element), and other parts.
於ΙΤΟ電極側連接正極、Ag電極側連接 電源計,外加直流電流。外加i 〇v時於第二:铱並且經由 分別察見發光。 主弟二發光部 [貫施例5 ··大氣等離子體之使用]Connect the positive electrode on the ITO electrode side and the power meter on the Ag electrode side, and apply DC current. In addition, i 0v is on the second: iridium and the luminescence is seen separately. The younger brother of the second luminous department [Example 5 ·· Use of atmospheric plasma]
除了使用大氣壓等離子體代替氧等離 實施例4進行元件製作。與實施例4同樣可以外 一至第二發光部分別察見發光。 /成圖型, [貫施例6 :超音波浴之使用] (緩衝層之製膜) 將6忖口 板厚1. lmni之圖型化17〇基板洗淨 作為基體Example 4 was performed except that atmospheric pressure plasma was used instead of oxygen plasma. As in Embodiment 4, light emission can be observed in the first to second light emitting sections, respectively. / Pattern, [Example 6: Use of Ultrasonic Bath] (film formation of buffer layer) 6-port thickness 1.lmni patterned 170 substrate washing as substrate
555830555830
五、發明說明(43) 述‘集」緩衝層?佈液(Biel公司製;Baytr〇n ' ρ Ί 所示))0.5毫升,並於基體之中心部滴 :厚ί二旋/。。於25〇〇rpm保持20秒鐘形成層。其結果, 私集正型光阻液(東京應化公司製,· 〇fpr_8〇〇)2毫 並於基體之中心部滴下,進行旋塗。於5〇〇rpm保持1〇秒 鐘,其後,於20〇〇rpm保持2〇秒鐘形成層。其結果,膜 為約。,t:進分鐘預烘烤。其後,與曝光光罩 共同女裝於疋線曝光機,並對欲除去緩衝層之部分進 外線曝光。以光阻物顯像液(東京應化公司製;nmd_㈧顯、 像20秒鐘後並水洗,除去曝光部之光阻物。於i2(rc後烘 烤30分鐘後’以丙酌將光阻物完全除去,並於丙酮中妒成 任意圖型的不溶緩衝層。 ^ (發光層之製膜) 徠集聚 對伸苯基伸乙烯基衍生物發光高分子MEH-Ppv之丨^%二甲 苯溶液2宅升’並於基體之中心部滴下,進行旋塗。於 20 0 0rpm保持10秒鐘形成發光層。其結果,膜厚為8〇〇入 於做為第一發光層之緩衝層被圖型化之基體上V. Description of the Invention (43) What is the "set" buffer layer? Cloth solution (manufactured by Biel; shown by Baytrón 'ρ))) 0.5 ml, and dripped in the center of the substrate: thick Twisted /. . A layer was formed by holding at 2500 rpm for 20 seconds. As a result, a private collection of a positive type photoresist (manufactured by Tokyo Yinghua Co., Ltd., 〇fpr_800) was dropped on the center portion of the substrate, and spin-coated. It was kept at 500 rpm for 10 seconds, and thereafter, it was kept at 2000 rpm for 20 seconds to form a layer. As a result, the film was approximately sized. , T: Pre-bake in minutes. Thereafter, the women's clothing was exposed together with the exposure mask on a thin line exposure machine, and the portion where the buffer layer was to be removed was externally exposed. Photoresist developing solution (manufactured by Tokyo Yinghua Co., Ltd .; nmd_㈧ was developed, washed for 20 seconds, and washed with water to remove the photoresist in the exposed area. After baking for 30 minutes at i2 (rc), the photoresist was removed with acrylic resin. The material is completely removed, and it is jealously formed into an insoluble buffer layer of any pattern in acetone. ^ (Film formation of light-emitting layer) ^% p-phenylene vinyl derivative light-emitting polymer MEH-Pvv ^^ xylene solution 2 Zhaisheng 'was dropped on the center of the substrate and spin-coated. It was held at 2000 rpm for 10 seconds to form a light-emitting layer. As a result, the film thickness was 800% and was used as the buffer layer pattern of the first light-emitting layer. On the substrate
採集正型光阻液(東京應化公司製;〇FPR — 8〇〇)2毫升, 並於基體之中心部滴下,進行旋塗。於5 0 0rpm保持1〇秒 鐘,其後,於2 0 0 0rpm保持20秒鐘形成光阻層。其結果, 膜厚為約1 μ m。於8 0 °C進行預烘烤3 〇分鐘。其後,與曝光 光罩共同安裝於定線曝光機’並對第一色發&部以^欲 除去發光層之部分進行紫外線曝光。以光阻物顯像液(東2 ml of a positive type photoresist solution (manufactured by Tokyo Yinghua Co., Ltd .; OFPR-800) was collected, dropped on the center of the substrate, and spin-coated. It was held at 500 rpm for 10 seconds, and thereafter, it was held at 2000 rpm for 20 seconds to form a photoresist layer. As a result, the film thickness was about 1 μm. Pre-bake at 80 ° C for 30 minutes. Thereafter, it is installed together with the exposure mask on an alignment exposure machine ', and the first color hair part is exposed to ultraviolet rays at a portion where the light emitting layer is to be removed. Photoresist developer solution (East
\\326\2d-\90-H\90123579.ptd\\ 326 \ 2d- \ 90-H \ 90123579.ptd
555830 五、發明說明(44) 司製;__3)顯像2。秒鐘後並水洗,除去 苯 方、1 2 〇 ^後烘烤3 0分鐘後,於超音波浴中以 :除去已脫除光阻物部分之發甲 光阻物所保護之基體。 仟弟知光°卩為經 八:二\第二發光層之聚對伸苯基伸乙烯基衍生物發光-之1…二甲苯溶液採集2毫升,於基體 果:厚=塗。於_rPm保持1 〇秒鐘形成層。其、: 楚:為 以丙酮剝離光阻物,則可將圖型化之 形成之光阻物、與第二發光層予以制 ▽圖盂化之弟一發光層露出。 ” ί Ϊ正型光阻液(東京應化公司製;0FPR-80 0 ) 2毫升, 二、:體之中心部滴下,進行旋塗。於50 Orpin保持1〇秒 =尸^後,於20〇〇rpm保持2〇秒鐘形成光阻層。其結果, 約! _。於80。〇進行預烘烤3〇分鐘。其後,盘 :卜:安裝於定線曝光機,並對第-色和第二色發光部 像液cVt除去發光層之部分進行紫外線曝光。以光阻物顯 俱 厅、應化公司製;NMD —3)顯像2〇秒鐘後並水洗, ΐίΓ;”:物。於120t後供烤30分鐘後,於超音波 隻一曱本除去已脱除光阻物部分之發光層,取得第一及 弟一發光部為經光阻物所保護之基體。 八::為第三發光層之聚對伸苯基伸乙烯基衍生物發光汽 ;Γτ m 里/ ,進仃鉍塗。於2 0 0 〇rpm保持10秒鐘形成層。其結 膜厚為8 Q G A。以丙_剝離光阻物,%可將圖型化之 555830555830 V. Description of the invention (44) Division; __3) Imaging 2. After 2 seconds, wash with water, remove the benzene cubes, and then bake for 30 minutes. Then, in a supersonic bath, remove the substrate protected by the photoresist with the nails removed from the photoresist. My brother knows the light ° 卩 is the eight: two \ The second light-emitting layer of poly-p-phenylene vinyl derivative light-emission of 1 ... xylene solution 2 ml, in the matrix Fruit: Thick = coated. A layer was formed by holding at _rPm for 10 seconds. Where: Chu: In order to peel off the photoresist with acetone, the photoresist formed by patterning and the second light-emitting layer can be made. ▽ The light-emitting layer of the younger brother is exposed. 2 liters of positive photoresist solution (manufactured by Tokyo Yinghua Co., Ltd .; 0FPR-80 0) 2 ml, the central part of the body was dropped, and spin-coated. Hold at 50 Orpin for 10 seconds = cadaver, after 20 〇rpm was maintained for 20 seconds to form a photoresist layer. As a result, about! _. Pre-baking was performed at 80.30 for 30 minutes. Thereafter, the disk: Bu: mounted on the line exposure machine, and the- And the second-color light-emitting part image liquid cVt except the light-emitting layer for ultraviolet exposure. Photoresist display hall, manufactured by Yinghua Co., Ltd .; NMD—3) After developing for 20 seconds and washing with water, ΐίΓ; ": Thing. After baking for 120 minutes at 120t, the light-emitting layer from which the photoresist part has been removed is removed by ultrasound only once, and the first and second light-emitting parts are protected by the photoresist. 8: It is the poly-p-phenylene vinylene derivative light-emitting vapor of the third light-emitting layer; Γτ m inside /, which is coated with bismuth. A layer was formed by holding at 2000 rpm for 10 seconds. Its conjunctival thickness is 8 Q G A. C-stripping photoresist,% can be patterned 555830
第一及第二發光層上方所形成之光阻物、與第三發光層予 以剝離,令圖型化之第一及第二發光層露出。 曰 採集正型光阻液(東京應化公司製;OFPR-80 0 ) 2毫升,The photoresist formed on the first and second light-emitting layers and the third light-emitting layer are peeled off to expose the patterned first and second light-emitting layers. Collect 2 ml of positive photoresist (manufactured by Tokyo Yinghua Co., Ltd .; OFPR-80 0),
並於基體之中心部滴下,進行旋塗。於5 0 0rpm保持ι0秒 鐘,其後,於2 0 0 Qrpm保持20秒鐘形成光阻層。其結果, 膜厚為約1 // m。於80 °C進行預烘烤30分鐘。其後,與曝光 光罩共同安裝於定線曝光機,並對第一至第三發光部以外 之欲除去發光層之部分進行紫外線曝光。以光阻物顯像液 (東京應化公司製;NMD-3)顯像20秒鐘後並水洗,除去曝 光部之光阻物。於1 2 〇 °C後烘烤3 0分鐘後,於超音波浴中 以甲苯除去已脫除光阻物部分之發光層,取得第一至第三 ,光部為經光阻物所保護之基體。其後,以丙酮將光阻^ 完全除去,令圖型化之發光層露出。 々於10 0 °C乾燥1小時後,其次,於所得之基體上,將做為 第二電極層(上方電極)之。澱積成5〇〇人之厚度,再將做 為保護層之Ag澱積成2 5 0 0 A之厚度,製作EL元件。 (EL元件之發光特性的評價) 。於ITO電極側連接正極、人§電極側連接負極,並且經由It was dropped on the center of the substrate and spin-coated. It was maintained at 500 rpm for 0 seconds, and thereafter, it was maintained at 2000 Qrpm for 20 seconds to form a photoresist layer. As a result, the film thickness was about 1 // m. Pre-bake at 80 ° C for 30 minutes. Thereafter, it is mounted on an alignment exposure machine together with an exposure mask, and the portions other than the first to third light emitting portions to be removed from the light emitting layer are exposed to ultraviolet rays. It was developed with a photoresist developer (manufactured by Tokyo Inka Co., Ltd .; NMD-3) for 20 seconds and washed with water to remove the photoresist in the exposed part. After baking at 120 ° C for 30 minutes, the light-emitting layer from which the photoresist part has been removed is removed with toluene in an ultrasonic bath to obtain the first to third, and the light part is protected by the photoresist Substrate. Thereafter, the photoresist was completely removed with acetone, and the patterned light-emitting layer was exposed. After drying at 100 ° C for 1 hour, the second substrate will be used as the second electrode layer (upper electrode) on the obtained substrate. It was deposited to a thickness of 500 people, and then Ag as a protective layer was deposited to a thickness of 2500 A to fabricate an EL element. (Evaluation of the light emitting characteristics of the EL element). Connect the positive electrode on the ITO electrode side and the negative electrode on the human § electrode side.
電源計,外加直流電流。外加丨〇v時於第一至第三發光部 分別察見發光。 [實施例7 :絕緣層之形成] ΐ3_忖<口、板厚1 ·1 mm之圖型化1 T〇基板洗淨,作成基體 及第-電極層。此時ΙΤ〇圖型為線寬84_且間隔為16 。上述間隔部分與1T0之邊端部(各5#m),以26/zm寬Power meter, plus DC current. At the time of application, the light emission was observed in the first to third light emitting sections, respectively. [Example 7: Formation of an insulating layer] ΐ3_ 忖 < A patterned 1 TO substrate with a thickness of 1.1 mm and a substrate was washed to form a substrate and a first electrode layer. At this time, the ITO pattern is line width 84_ and the interval is 16. The above interval and the edge of 1T0 (each 5 # m), with a width of 26 / zm
\\326\2d-\90-ll\90123579.ptd 第48頁 555830 五、發明說明(46) 度,以絕緣性之UV硬化型抵+, 形成 ^ n^· ^ r 、于月曰所構成之負型光阻物^ 之膜厚5 // in的絕緣層。苴仙 刃所 件。 /、他,同實施例4處理形成El元 於形成第一 缺相,可發揮做為絕緣層的機能, 〜第三鉢二啄a 別察見發光。因此,可知即使 t γ '光部i 4之情況形成圖型。 卩使形成絕緣層,亦可同實施令 [實施例8 :發光層之溶劑] (發光層之製膜)\\ 326 \ 2d- \ 90-ll \ 90123579.ptd Page 48 555830 V. Description of the invention (46) Degree, with insulation UV curing type +, forming ^ n ^ · ^ r The thickness of the negative photoresistor ^ is 5 // in. Wuxian blade pieces. /. He, formed in the same manner as in Example 4 to form the first element, which can form the first phase loss, and can function as an insulating layer. ~ The third bowl does not see light emission. Therefore, it can be seen that the pattern is formed even in the case of t γ 'light portion i 4. In order to form an insulating layer, it is also possible to implement the same order [Example 8: Solvent of the light emitting layer] (film formation of the light emitting layer)
^忖口、板厚1.1_之圖型化IT〇基板洗淨,作為基體 及弟=電極層。採集緩衝層塗佈液(Biel公司製;Baytro】 (上述化學式(1 )所示))0 · 5毫升,並於基體之中心部滴 下,進行旋塗。於2 5 0 〇rpm保持2〇秒鐘形成層。其結 膜厚為8 0 0 A。 採集正型光阻液(東京應化公司製;〇FpR_8〇〇)2毫升,^ The patterned IT0 substrate with a thickness of 1.1 mm is cleaned and used as a substrate and an electrode layer. 0.5 ml of a buffer layer coating solution (manufactured by Biel; Baytro) (shown by the above-mentioned chemical formula (1)) was collected, dropped on the center of the substrate, and spin-coated. A layer was formed by holding at 2500 rpm for 20 seconds. Its conjunctival thickness is 800 A. Collect 2 ml of a positive type photoresist solution (manufactured by Tokyo Yinghua Co., Ltd .; 〇FpR_800),
並於基體之中心部滴下,進行旋塗。於5〇〇rpm保持1〇秒 鐘,其後,於2 0 0 〇rpm保持20秒鐘形成層。其結果,膜厚 為約1 /zm。於8 0 t:進行預烘烤30分鐘。其後,與曝光光罩 共同女I於疋線曝光機,並對欲除去緩衝層之部分進行紫 外線曝光。以光阻物顯像液(東京應化公司製;—3)顯 像2 (3秒鐘後並水洗,除去曝光部之光阻物及緩衝層。於 1 2 0 °C後烘烤3 0分鐘後,以丙酮將光阻物完全除去,並於 丙酮中形成任意圖型的不溶緩衝層。 (發光層之製膜)It was dropped on the center of the substrate and spin-coated. It was kept at 500 rpm for 10 seconds, and thereafter, it was kept at 2000 rpm for 20 seconds to form a layer. As a result, the film thickness was about 1 / zm. At 80 t: Pre-bake for 30 minutes. Thereafter, the female and the exposure mask were used in a ray exposure machine, and the portion where the buffer layer was to be removed was subjected to ultraviolet exposure. Photoresist developer solution (manufactured by Tokyo Yinghua Co., Ltd .; -3) was developed 2 (3 seconds and washed with water to remove the photoresist and buffer layer in the exposed area. Bake at 30 ° C for 30 ° After a few minutes, the photoresist was completely removed with acetone, and an insoluble buffer layer of any pattern was formed in acetone. (Filming of light-emitting layer)
\\326\2d-\90-ll\90123579.pid 第49頁 555830 五、發明說明(47) 於做為第一發光層之緩衝層被圖型化之基體上,採集聚 乙烯基叶唾(上述化學式(3)所示)之2wt%曱苯溶液2毫升, 並於基體之中心部滴下,進行旋塗。於2〇〇〇rpm保持1〇秒 鐘形成層。其結果,膜厚為8 〇 〇 A。 採集正型光阻液(東京應化公司製;OFPR-80 0 ) 2毫升,\\ 326 \ 2d- \ 90-ll \ 90123579.pid Page 49 555830 V. Description of the invention (47) On the substrate that is patterned as the buffer layer of the first light-emitting layer, a polyethylene-based leaf saliva ( 2 ml of a 2 wt% toluene solution in toluene (shown in the above chemical formula (3)) was dropped on the center of the substrate and spin-coated. A layer was formed by holding at 2000 rpm for 10 seconds. As a result, the film thickness was 800 A. Collect 2 ml of positive type photoresist solution (manufactured by Tokyo Yinghua Co., Ltd .; OFPR-80 0),
並於基體之中心部滴下,進行旋塗。於5 〇 〇 r pm保持丨〇秒 名里’其後’於2 0 Q Q r p m保持2 0秒鐘形成層。其結果,膜厚 為約1 //m。於80。(:進行預烘烤30分鐘。其後,與曝光光罩 共同安裝於定線曝光機,並對第一色發光部以外之欲除去 發光層之部分進行紫外線曝光。以光阻物顯像液(東京應 化么司衣,N M D - 3 )顯像2 0秒鐘後並水洗,除去曝光部之光 阻物。於12 0 °C後烘烤30分鐘後,於超音波浴中以甲苯(第 一發光層顯像液)除去已脫除光阻物部分之發光層,取得 第一發光部為經光阻物所保護之基體。 將做為第二發光層之聚對伸苯基伸乙烯基衍生物發光高 分子MEH-PPV(上述化學式(2)所示)之lwt%二曱苯溶液採集 2毫升,於基體之中心部滴下,進行旋塗。於2〇〇〇rpm保持 1 0秒鐘形成層。其結果,膜厚為8 0 0 A。 採集正型光阻液(東京應化公司製;OFPR-80 0 ) 2毫升, 並於基體之中心部滴下’進行旋塗。於5 〇 〇 r p m保持1 Q秒 鐘,其後,於2 0 0 0rpm保持20秒鐘形成光阻層。其結果, 膜厚為約1 # m。於8 0 °C進行預烘烤3 0分鐘。其後,與曝光 光罩共同安裝於定線曝光機,並對第一發光層和第二發光 層之發光部以外之欲除去發光層之部分進行紫外線曝光。It was dropped on the center of the substrate and spin-coated. The layer was held at 500 r pm for 10 seconds, and was then held at 20 Q Q r p m for 20 seconds to form a layer. As a result, the film thickness was about 1 // m. At 80. (: Pre-baking for 30 minutes. After that, it is installed in an alignment exposure machine together with an exposure mask, and UV-exposed to the portion where the light-emitting layer is to be removed except for the first-color light-emitting portion. Photoresist developer solution (Tokyo Yinghua Moss, NMD-3) After developing for 20 seconds and washing with water, remove the photoresist on the exposed part. After baking at 120 ° C for 30 minutes, use toluene ( The first light-emitting layer developing solution) removes the light-emitting layer from which the photoresist has been removed, and obtains the first light-emitting portion as a substrate protected by the photoresist. Poly-p-phenylene vinylene will be used as the second light-emitting layer. Derivative light-emitting polymer MEH-PPV (shown in the above chemical formula (2)) was collected in 2 ml of a lwt% dibenzobenzene solution, dropped on the center of the substrate, and spin-coated. It was held at 2000 rpm for 10 seconds. A layer was formed. As a result, the film thickness was 800 A. 2 ml of a positive type photoresist liquid (manufactured by Tokyo Ina Co., Ltd .; OFPR-800) was collected and dropped on the center of the substrate to perform spin coating. At 50 〇rpm was maintained for 1 Q seconds, and thereafter, a photoresist layer was formed at 2000 rpm for 20 seconds. As a result, the film thickness was 1 # m. Pre-bake at 80 ° C for 30 minutes. After that, install it together with the exposure mask on the alignment exposure machine, and remove the light emitting parts other than the light emitting part of the first light emitting layer and the second light emitting layer. A part of the light emitting layer is exposed to ultraviolet rays.
\\326\2d-\90-ll\90123579.ptd 第50頁 555830 五 發明說明(48) 以光阻物顯像液(東京應化公司製,· NMD_3)顯像2〇秒鐘後 亚水洗,除去曝光部之光阻物。於][2〇 t後烘烤3〇分鐘 後’於超音波浴中以甲苯(第二發光層顯像液)除去已脫除 光阻物部分之發光層,取得第一及第二發光層為經光阻物 所保護之基體。 其後,以丙酮將光阻物完全除去,令圖型化之發光層露 出。 θ 々於1 0 0 °C乾燥1小時後,其次,於所得之基體上,將做為 第二電極層(上方電極)之Ca澱積成5 0 0 A之厚度,再將做 為保護層之Ag澱積成2500A之厚度,製作EL元件。 此處,第二發光層之發光層形成用溶劑及發光層顯像液 二甲苯相對於第一發光層於25 ti氣壓之溶解度為〇 〇ι 克/克溶劑,又,相對於第二發光層於25 ti氣壓 度為0 · 1克/克溶劑。 / (E L元件之發光特性的評價) 於ITO電極側連接正極、Ag電極側連接負極,並且經由 電源計,外加直流電流。外加lov時察見來 之發光,且於外加m時察見來自第先= 未產生混色。 匕I心知尤,並 [比較例1 ] 除了:MEH:PPV做為第一發光層、聚乙稀基叶哇做為第 一發光層:外’同實施例進行元件 發光層之塗佈時及第二發光# °果於第一 PI , ^ .么、+ 〜尤層之样頁像時流出第一發光S , 引起此色,…法取得良好的圖型。 曰 第51頁 \\326\2d-\90-11\90123579.ptd 555830 五、發明說明(49) #此時第^發光層之發光層形成用溶劑及發光層顯像液甲 ,相對於第一發光層於25 °C、1氣壓之溶解度為0· 1克/克 〉谷劑’又’相對於第二發光層於2 5 °C、1氣壓之溶解产爲 〇 · 1克/克溶劑。 X ”' [實施例9 :發光層之發光波長] (緩衝層之製膜) 將6忖口、板厚丨· lmm之圖型化17〇基板洗淨 及第-電極層。採集緩衝層塗Bie =體 =上述化學式⑴所示))0.5毫升,並於基體之 :厚=\塗。於25°一持2°秒鐘形成層。其… 並ίϊΐΓί阻液(東京應化公司製;〇FP"〇°)2毫升, 鐘,、^ 部滴下’進行旋塗。於500rpm保持10秒 膜=,於2_聊保持2G秒鐘形成光阻層。其 光::二^於80t進行3〇分鐘預烘烤。其後 ”:同*裝於定線曝光·,並對欲,去緩衝声之;2 二,夕線曝光。以光阻物顯像液(東京應化公曰。刀進 J : = t後烘_分鐘後,以丙„ 去並於丙酮中形成任意圖型之不溶緩衝声。 示 (發光層之製膜) 曰 於做為第一發光層之緩衝層被圖型化之 色發光材料之聚乙烯基咔唑(上土版上,採集藍 甲苯溶液…,並於基體之中= Ϊ(3)進 == 90123579.ptd 第52頁 555830 五、發明說明(50) — -- 2〇〇yPm保持10秒鐘形成發光層。其結果,膜厚為8〇〇入。 、,採集正型光阻液(東京應化公司製;OFPR-80 0 ) 2毫升, 並於基虹之中心部滴下,進行旋塗。於5 〇 〇 r 保持1 〇秒 鐘,其後,於20〇〇rpm保持20秒鐘形成層。其結果,膜厚 為約。於80 t:進行預烘烤3〇分鐘。其後,與曝光光罩 =同安裝於定線曝光機,並對第一發光層之發光部以外之 奴除去發光層之部分進行紫外線曝光。以光阻物顯像液 (東京應化公司製;NMD-3)顯像2〇秒鐘後並水洗,除去曝 光部=光阻物。於:[20 t後烘烤3()分鐘後,於超音波浴中 =甲苯除去已脫除光阻物部分之發光層,取得第一發 為經光阻物所保護之基體。 曰 、將做為第二發光層之聚對伸笨基伸乙烯基衍生物發光 上述化學式⑴所示)之^%甲苯溶液採集2。 二户方:基盔之中心部滴下,進行旋塗。於2〇〇〇rpm保持 1〇秒鐘形成發光層。I结果,膜厚為8()(^。以 ^ 物、與"光層予弟:發光層上方所形成之光阻 出。乐-“層予以剝離,令圖型化之第-發光層露 、=集正型光阻液(東京應化公司製;〇FpR_8〇 亚於基體之中心部滴下,進行旌泠 开 於 * μ 丁 $疋皇。於5⑽rpm保持ι〇秒 =’其後,於2_rPm保持2〇秒鐘形成層。其社果, $約1 //Π1。於80 C進行預烘烤3〇分鐘。其後, 光予 t同安裝於定線曝光機,並對第-發光層ί第。光 發光部以外之欲除去發光声之却 务光層之 尤層之部分進行紫外線曝光。以光\\ 326 \ 2d- \ 90-ll \ 90123579.ptd P.50 555830 Fifth invention description (48) Photoresist developer solution (manufactured by Tokyo Ind. Co., Ltd., · NMD_3) is developed after 20 seconds of sub-washing , Remove the photoresist in the exposed area. After] [20t after baking for 30 minutes', the toluene (second light-emitting layer developing solution) was used to remove the light-emitting layer from which the photoresist had been removed in an ultrasonic bath to obtain the first and second light-emitting layers. It is a substrate protected by a photoresist. After that, the photoresist was completely removed with acetone to expose the patterned light-emitting layer. θ 々 After drying at 100 ° C for 1 hour, secondly, on the obtained substrate, Ca as a second electrode layer (upper electrode) is deposited to a thickness of 5 0 A, and then as a protective layer Ag was deposited to a thickness of 2500 A to fabricate an EL element. Here, the solubility of the light-emitting layer-forming solvent of the second light-emitting layer and the light-emitting layer developing solution xylene with respect to the first light-emitting layer at a pressure of 25 ti pressure is 0.00 g / g of solvent, and relative to the second light-emitting layer At 25 ti, the pressure is 0.1 g / g of solvent. / (Evaluation of the light-emitting characteristics of EL devices) Connect the positive electrode to the ITO electrode side and the negative electrode to the Ag electrode side, and apply a DC current through the power meter. Luminescence seen when lov is applied, and from the first when m is added = no color mixing occurs. I know it well, and [Comparative Example 1] Except: MEH: PPV is used as the first light-emitting layer, and polyethylene Yewa is used as the first light-emitting layer: Except when the device light-emitting layer is coated in the same embodiment And the second luminescence # ° As a result of the first PI, ^, +, and the like, the first luminescence S flows out of the sample page image, causing this color, ... to obtain a good pattern. Page 51 \\ 326 \ 2d- \ 90-11 \ 90123579.ptd 555830 V. Description of the invention (49) #At this time, the light-emitting layer forming solvent for the light-emitting layer and the light-emitting layer imaging liquid A are compared with the first. The solubility of one light-emitting layer at 25 ° C and 1 atmosphere is 0.1 g / g.> The cereal is reconstituted at 25 ° C and 1 atmosphere to produce 0.1 g / g of solvent. . X ”'[Example 9: Luminous wavelength of light-emitting layer] (film formation of buffer layer) A pattern of 6 openings and a plate thickness 丨 · lmm was patterned. 17 The substrate was cleaned and the first electrode layer was collected. Bie = body = shown in the above chemical formula (i))) 0.5 ml, and in the substrate: thick = \ coated. Form a layer at 25 ° for 2 seconds. It is ... FP " 0 °) 2ml, bell, and ^ parts were dropped 'for spin coating. Keep film at 500rpm for 10 seconds, and hold 2G seconds for 2 seconds to form a photoresist layer. Its light :: 2 ^ at 80t for 3 〇Minute pre-baking. Afterwards ": Same as * installed in the line exposure, and to buffer the sound to the desire; 2 Second, the evening line exposure. Photoresist imaging solution (Tokyo Yinghua Co., Ltd.). After the knife enters J: = t and bakes for _ minutes, go to C and form any pattern of insoluble buffering sound in acetone. ) Polyvinyl carbazole, which is a patterned colored luminescent material as the buffer layer of the first luminescent layer (on the clay plate, collect the blue toluene solution ... and put it in the matrix = Ϊ (3) 进 = = 90123579.ptd Page 52 555830 V. Description of the invention (50)-200 μPm is held for 10 seconds to form a light-emitting layer. As a result, the film thickness is 800 μm. 2 ml of OFPR-800, manufactured by Tokyo Chemical Industry Co., Ltd., was dropped on the center of Kihong and spin-coated. Hold it at 500r for 10 seconds, and then hold it at 2000 rpm for 20 seconds. A layer was formed. As a result, the film thickness was about. At 80 t: pre-baking was performed for 30 minutes. Thereafter, it was installed in the same line exposure machine as the exposure mask =, and was applied to other parts than the light-emitting part of the first light-emitting layer. Remove the light-emitting layer and expose it with ultraviolet light. It is developed with a photoresist developer (manufactured by Tokyo Inka Co., Ltd .; NMD-3) for 20 seconds, washed with water, and removed. Light section = photoresist. After: [20 t bake for 3 () minutes, in an ultrasonic bath = toluene, remove the light-emitting layer from which the photoresist has been removed, and obtain the first shot as a photoresist. Protection of the substrate. That is, the polymer solution that will be used as the second light-emitting layer to emit light (shown in the above chemical formula 发光) of ^% toluene solution is collected 2. Nitokata: The center of the base helmet is dripped and carried out Spin coating. Hold at 2000 rpm for 10 seconds to form a light-emitting layer. As a result, the film thickness was 8 () (^. With ^ and "light layer": photoresist formed above the light-emitting layer出-乐-"The layer is peeled off, so that the patterned first-light-emitting layer is exposed, = set positive type photoresist liquid (manufactured by Tokyo Yinghua Co., Ltd .; 0FpR_80) is dropped on the center of the substrate, * μ 丁 元 疋 皇. Hold for 5 seconds at 5 rpm = 'After that, hold layer for 2 seconds at 2-rPm to form a layer. Its social fruit, $ about 1 // Π1. Pre-bake at 80 C for 30 minutes. After that, the light source t is installed on the alignment exposure machine, and the light-emitting layer other than the light-emitting part is to be removed from the light-emitting part of the special layer of the light-emitting layer. Exposure to ultraviolet light. In the light
\\326\2d-\90-H\90i23579.pid 第53頁 555830 五、發明說明(51) 阻物顯像液(東京應化公司製;NMD —3)顯像2〇秒鐘後並水 洗,除去曝光部之光阻物。於12〇t後烘烤3〇分鐘後,於 ,音波=中以曱苯除去已脫除光阻物部分之發光層,取得 第一及第二發光層為經光阻物所保護之基體。 其後,以丙酮將光阻物完全除去,令圖型化之發光層露 出。 ,〇〇 〇C乾燥1小時後,其次,於所得之基體上,將做為 第一電極層(上方包極)之Ca^積成5〇〇a之厚度,再將做 為保護層之Ag澱積成25〇〇 A之厚度,製作EL元件。 (EL元件之發光特性的評價) + 於I TO電極侧連接正極、Ag,電極側連接負極,並且經由 =,外加直流電流。外加2〇v時,由第一發光層察見 來自4乙細基^坐之以430nm附近為波峰波長的發光,且 於外加10V%,由第二發光層察見來自meh —ppv之以⑽ 附近為波峰的發光。 然推測第二發光層中’來自第一發光層邊端部 二二Λ 部分流出,並與第二發光層發光部之 二二但並未察見來自聚乙稀基味哇的發光。 L比較例2 ] 第除工:1ΕΗ~ΡΓ做為第一發光層、以聚乙烯基咔唑做為 第一赉光層以外,同實施例進行元件製作。 =0電極側連接正極、Ag電極側連接負極,並且經由 來/自ΜδΕΗ’ P夕直1(1流。外加1〇V時,由第一發光層察見 末自MEH-PPV之以5 9 0韻附近為波缘波長的發光,且於外加 555830 五、發明說明(52) 1 0V時,由第二發光層察見來自聚7| , 來乙烯基咔唑及MEH-PPV之 於430nm及5 9 0nm附近具有二個波峰的發光。 < 於第二發光層塗佈時,於圖型: 1匕終了立即由第一發氺JS 之邊端部流出MEH-PPV,並且成兔—斤 ^ m , t ^ 又馬在第二發光層之發光部 引起與聚乙烯基咔唑混色之原因。 [發明之效果] 若根據本發明,令EL元件内夕, α 與平版㈣卞不 至少一層有機EL層經由光 學千版印刷法予以圖型化而取得, 殺積予以圖型化法相比較,%因氣故右與先則所進订之以 直允执借蓉,将π ⑴因為不需要具備定線機構的 真工叹備寻,故可較容易且廉價地 唷墨予以圖型化法相比較,丨 衣t 另方面右與 槿乎铷4 A4 相 1 則因不需要對於輔助圖型化之 構造物和基體進行兪#拽笪 ^ 〜 吐出精破声m 言為佳,更且由噴墨磁頭之 f古4生細冈剂々 則本發明之製造方法可稱為對於 更同和細圖型之形成上,為 鉻昍々-从 风 局更佳之方法。因此,若根據本 二的EL元Ϊ。之製造方法’則可較容易且廉價地取得高精 物又且;:;ίΓ月’則可提供於發光層内不會混入不純 且七九效革和光之抽出效率 簡略化、量產化和妒成古 亚可只 、 調失直H tin t圯成回色釤且均勻發光之圖型、減低交 门天具王口P之EL TL件的製造方 更具體而言,例4ώ八 及^凡件0 皁純矩陣型元件护舌Λ 士 AA ^ 曰 A > … 45動中的交調失真。又,縱W ,玉丨 純矩陣型亓杜J:t令緩衝層予以圖裂化’則可減低 由令塗佈所製 I、 九層予以圖型化,則可同時進行激光除\\ 326 \ 2d- \ 90-H \ 90i23579.pid Page 53 555830 V. Description of the invention (51) Inhibitor imaging solution (manufactured by Tokyo Yinghua Co., Ltd .; NMD-3) After developing for 20 seconds and washing with water , Remove the photoresist in the exposed area. After baking for 30 minutes at 120 t, the light-emitting layer from which the photoresist portion has been removed is removed by using toluene at Sonic = in Sonic =, and the first and second light-emitting layers are substrates protected by the photoresist. After that, the photoresist was completely removed with acetone to expose the patterned light-emitting layer. After drying at 1000 ° C for one hour, Ca ^ as the first electrode layer (upper cladding electrode) was deposited on the obtained substrate to a thickness of 5000a, and then Ag was used as a protective layer. It was deposited to a thickness of 2500 A to make an EL element. (Evaluation of the light-emitting characteristics of the EL element) + A positive electrode and Ag are connected to the I TO electrode side, and a negative electrode is connected to the electrode side, and a direct current is applied via =. When 20V is applied, the first light-emitting layer sees the light emission from the 4th base group and the peak wavelength is around 430nm, and when 10V% is added, the second light-emitting layer sees the light from meh-ppv. Nearby is the emission of wave crests. However, it is speculated that 'from the end portion of the first light-emitting layer of the second light-emitting layer is partially leaked out of the second light-emitting layer, and it is the same as that of the second light-emitting layer's light-emitting portion. L Comparative Example 2] Except for the following steps: 1E ~~ PΓ was used as the first light-emitting layer and polyvinylcarbazole was used as the first phosphor layer. = 0 is connected to the positive electrode on the electrode side, and connected to the negative electrode on the Ag electrode side, and passes through / from MδΕΗ ′ P Xizhi 1 (1 current. When 10V is applied, the first light-emitting layer sees that the MEH-PPV is less than 5 9 Near 0 rhyme is the emission at the wave edge wavelength, and 555830 is added. V. Invention description (52) At 10V, the second light-emitting layer is observed from poly7 |, vinylcarbazole and MEH-PPV at 430nm and Luminescence with two peaks near 590 nm. ≪ When the second light-emitting layer is applied, the pattern is: After the end of the dagger, MEH-PPV flows out immediately from the end of the first hairpin JS, and becomes rabbit-jin ^ m, t ^ The cause of color mixing with polyvinyl carbazole in the light-emitting part of the second light-emitting layer. [Effect of the invention] According to the present invention, the EL element, α and the lithographic plate should not have at least one layer. The organic EL layer is obtained by patterning through the optical stencil printing method, and the plotting method is compared with the patterning method. The %% is ordered by the right and the prior rules to be borrowed by reason, and π ⑴ is not required to have The real working of the alignment mechanism is very easy to find, so it can be easily and cheaply compared with the patterning method. Face right and hibiscus 4 A4 phase 1 because there is no need to perform auxiliary structures and substrates 笪 # 笪 笪 ^ ~ It is better to spit out a cracking sound, and it is also based on the ancient 4 of the inkjet head. The method of producing the fine particles of the present invention can be referred to as a better method for the formation of more homogeneous and fine patterns. It is a better method from chromium. Therefore, according to the EL element of the second method. 'You can obtain high-quality products easily and cheaply ;: ίΓ 月' can provide impure impurities in the light-emitting layer and simplify the extraction efficiency, mass production, and jealousy. Yake only, adjust the straight H tin t 圯 into the color back 钐 and evenly emit the pattern, reduce the production of EL TL pieces of the King of the King P, more specifically, example 4 Soap matrix-type element tongue Λ AA ^ A… 45 intermodulation distortion in motion. In addition, vertical W, jade 丨 pure matrix type 亓 Du J: t causes the buffer layer to be cracked in graphs. Pattern the I and Nine layers made by coating, and then perform laser removal at the same time.
去、和通常所進行炊 J J丨J J 丁之以擦拭將不溶物除去,ϋ且可令工程J, J, J J Ding Zhi to remove insoluble matter by wiping, and can make the project
555830 五、發明說明(53) 簡略化。更且,不需要使用間隔壁、具有輔助圖型化撥墨 性之構成物及具有輔助圖型化撥墨性之表面處理任一者方 面均可令工程簡略化。又,本發明於以任意圖型發光之EL 元件或全色彩發光之EL元件任一者、及再使用柔軟性基體 之EL元件中,均於控制發光色、及圖型化方面均為優良。 【元件編號之說明】 卜 11 基 體 3、 13 緩 衝 層 4、 15 正 型 光 阻 層 7 發 光 層 14 第 一 發 光 層 18 第 二 發 光 層 19 第 三 發 光 層555830 V. Description of Invention (53) Simplified. Furthermore, it is not necessary to use a partition wall, a structure with auxiliary pattern repellency, and a surface treatment with auxiliary pattern repellency. The process can be simplified. In addition, the present invention is excellent in controlling the emission color and patterning of any EL element that emits light in any pattern or an EL element that emits light in a full color, and an EL element that reuses a flexible substrate. [Explanation of component number] Bu 11 substrate 3, 13 buffer layer 4, 15 positive photoresist layer 7 light emitting layer 14 first light emitting layer 18 second light emitting layer 19 third light emitting layer
90123579.ptd 第56頁 555830 圖式簡單說明 圖1(a)〜(1)為示出本發明EL元件之製造方法之一例,為 示出進行緩衝層之圖型化、製造單色EL元件之順序的工程 圖。 圖2 ( a)〜(η )為示出本發明EL元件之製造方法之其他例, 為示出進行三色發光層之圖型化、製造全色彩顯示之EL元 件之順序的工程圖。 圖3為示出將本發明EL元件中之發光層邊緣部分之截面 放大的放大截面圖。 圖4為示出將先前噴墨法所形成之發光層邊緣部分之截 面放大的放大截面圖。90123579.ptd Page 56 555830 Brief description of the drawings Figures 1 (a) to (1) show an example of the manufacturing method of the EL element of the present invention, and it shows the patterning of the buffer layer and the manufacturing of monochrome EL elements. Sequential drawing. Figs. 2 (a) to (η) are engineering diagrams showing other examples of the manufacturing method of the EL element of the present invention, and showing the sequence of patterning a three-color light-emitting layer and manufacturing an EL element for full-color display. Fig. 3 is an enlarged sectional view showing an enlarged cross section of an edge portion of a light emitting layer in an EL element of the present invention. Fig. 4 is an enlarged sectional view showing an enlarged cross-section of an edge portion of a light-emitting layer formed by a conventional ink-jet method.
90123579.ptd 第57頁90123579.ptd Page 57
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JP4406991B2 (en) | 2000-02-24 | 2010-02-03 | パナソニック株式会社 | Thin film EL device and manufacturing method thereof |
JP4053209B2 (en) * | 2000-05-01 | 2008-02-27 | 三星エスディアイ株式会社 | Manufacturing method of organic EL display |
US6433358B1 (en) * | 2000-09-11 | 2002-08-13 | International Business Machines Corporation | Method for producing an organic light emitting device (OLED) and OLED produced thereby |
KR100897028B1 (en) * | 2002-04-10 | 2009-05-14 | 다이니폰 인사츠 가부시키가이샤 | Method for manufacturing electroluminescent element |
JP2003317949A (en) * | 2002-04-24 | 2003-11-07 | Dainippon Printing Co Ltd | Manufacturing method for organic el element |
JP4426190B2 (en) * | 2003-01-24 | 2010-03-03 | 大日本印刷株式会社 | Method for manufacturing electroluminescent device |
-
2001
- 2001-09-21 US US09/960,088 patent/US6617186B2/en not_active Expired - Fee Related
- 2001-09-24 KR KR1020010059060A patent/KR100820260B1/en not_active IP Right Cessation
- 2001-09-25 EP EP01308141A patent/EP1261044A3/en not_active Withdrawn
- 2001-09-25 TW TW090123579A patent/TW555830B/en not_active IP Right Cessation
- 2001-09-25 CN CNB011422289A patent/CN1319418C/en not_active Expired - Fee Related
-
2003
- 2003-03-14 US US10/389,112 patent/US7220998B2/en not_active Expired - Fee Related
-
2006
- 2006-05-08 US US11/430,249 patent/US7615388B2/en not_active Expired - Fee Related
-
2007
- 2007-11-30 KR KR1020070123577A patent/KR100962601B1/en not_active IP Right Cessation
- 2007-11-30 KR KR1020070123578A patent/KR100923959B1/en not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
US7220998B2 (en) | 2007-05-22 |
KR100820260B1 (en) | 2008-04-07 |
EP1261044A2 (en) | 2002-11-27 |
EP1261044A3 (en) | 2003-01-02 |
KR20070121619A (en) | 2007-12-27 |
KR100923959B1 (en) | 2009-10-29 |
KR100962601B1 (en) | 2010-06-11 |
US7615388B2 (en) | 2009-11-10 |
KR20070121620A (en) | 2007-12-27 |
CN1319418C (en) | 2007-05-30 |
US6617186B2 (en) | 2003-09-09 |
US20060263919A1 (en) | 2006-11-23 |
US8021203B2 (en) | 2011-09-20 |
US20020072139A1 (en) | 2002-06-13 |
CN1347268A (en) | 2002-05-01 |
KR20020024553A (en) | 2002-03-30 |
US20080258616A1 (en) | 2008-10-23 |
US20030178621A1 (en) | 2003-09-25 |
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