TW554551B

TW554551B - Method of fabricating organic light emitting diode

Info

Publication number: TW554551B
Application number: TW91114572A
Authority: TW
Inventors: Hsin-Hung Lee; I-Chang Tsao; Guo-Diing Lee; Ming-Wei Sun
Original assignee: Au Optronics Corp
Priority date: 2002-07-02
Filing date: 2002-07-02
Publication date: 2003-09-21

Abstract

A method of fabricating organic emitting diode is described. A substrate having a plurality of thin film transistors thereon is provided, wherein each thin film transistor comprises a gate, a channel, a source and a drain. A first insulating layer is formed on the substrate covering the thin film transistors. Then a second insulating layer is formed on the first insulating layer, and an opening is formed through the first insulating layer and the second insulating layer to expose the drain. After this, an anode layer is formed covering the second insulating layer and the drain, and an emitting layer and a cathode layer are formed on the substrate sequentially.

Description

554551554551

本發造方法，元件（A c t 有機轉換效率以及光學件具備一明是有關於且特別是有 ive Matrix 發光二極體的半導體元項寫頭之發些特性，如用溫度範圍之要求，近速度、使示器特性現今一種主動式中。關於所述。主動式有機一種有關於一 OLED) 是一種件，常光元件無視角廣泛與年來已有機發發光二種防止產生漏可將電見的用等等。、製程全彩化成為qp 光二極極體之二極體元件（OLED)的製主動式有機發光二極體電之方法。能轉換成光能且具有高途為指示燈、顯示面板由於有機發光二極體元簡易、低成本、高應答等，符合多媒體時代顯究之熱潮。體元件以在積極的發展結構其及製造方法如下第1圖所不，其繪示為一種常用之主動式有機發光二極體元件之結構剖面示意圖。、凊參照第1圖，習知主動式有機發光二極體元件的製造方法’係首先在一基板100上形成一閘極丨〇2。接著於基板1 0 0與閘極1 〇 2上形成一閘極絕緣層丨〇 4。並且在閘極丨〇 2 上方之閘極絕緣層1 04上形成一通道層丨06。之後，於通道層106上形成一源極l〇8a/汲極i〇8b，以構成一薄膜電晶體0 緊接著，於基板100上方形成一保護層110，覆蓋住薄膜電晶體。之後，於保護層丨丨〇中形成一開口丨丨2，並暴露出沒極1 08b。之後，再於保護層丨丨〇上與部分開口 1丨2内部形成一陽極層114，而使陽極層114與汲極108b電性連接。According to the method of the present invention, the element (A ct organic conversion efficiency and the optical element have the characteristics of the semiconductor element write head which are clearly related and especially have the ive Matrix light-emitting diode, such as the requirements of the temperature range, near Speed, so that the characteristics of the indicator in an active type. About said. Active organic type is related to an OLED) is a piece, the constant light element has a wide viewing angle and has been organically light-emitting for two years to prevent leakage and can see electricity. Use and wait. Process: Full-colorization: Method for making active organic light-emitting diodes, which is a diode element (OLED) of a qp photodiode. It can be converted into light energy and has high-speed indicators and display panels. The organic light-emitting diodes are simple, low-cost, and highly responsive, which meets the craze of the multimedia era. The structure and manufacturing method of the body element are actively developed as shown in Fig. 1. It is a schematic cross-sectional view of a structure of a commonly used active organic light emitting diode element. Referring to FIG. 1, a conventional method for manufacturing an active organic light emitting diode element is to first form a gate electrode 02 on a substrate 100. Next, a gate insulating layer 4 is formed on the substrate 100 and the gate electrode 102. And a channel layer 06 is formed on the gate insulation layer 104 above the gate electrode 02. Thereafter, a source 108a / drain 108b is formed on the channel layer 106 to form a thin film transistor 0. Next, a protective layer 110 is formed over the substrate 100 to cover the thin film transistor. After that, an opening 丨 2 is formed in the protective layer 丨丨 0, and the electrode 108b is exposed. After that, an anode layer 114 is formed on the protective layer 丨丨 0 and a part of the opening 1-2, so that the anode layer 114 is electrically connected to the drain 108b.

9347twf.ptd 第5頁 554551 五、發明說明（2) " 之後，於基板100上方依序形成一發光層116以及一陰極層 11 8。如此，即完成一主動式有機發光二極體之製作。然而，通常主動式有機發光二極體之陰極層118會全面性的覆蓋在薄膜電晶體以及陽極層丨丨4之上方。而薄膜電晶體與陰極層11 8之間則僅藉由保護層丨丨〇而電性隔離、。睛參照第2圖，其係為第！圖中對應形成有薄膜電晶體之源極/汲極108a/108b、保護層11〇、有機層116以及陰極層 118之處。在上述之步驟中，倘若在沈積保護層n〇之過程中有微粒（Particle)、缺陷（Defect)或電弧（Arcing)產生時，將會使所形成之保護層丨1〇中產生微小之孔洞（pin Hole)。另外，當形成薄膜電晶體之汲極1〇8a/源極1〇化是使用鋁金屬時，也將因源極108a/汲極1〇8b不平緩之輪廓 (JIi 11 Lock)，而使後續於其上方所形成之保護層n〇產生微小之孔洞。而此微小孔洞便會在源極丨〇8a/汲極丨〇8b盥陰極層118之間形成一漏電途徑（Leakage path)12〇，造成元件之品質降低。因此，本發明的目的就是在提供一種有機發光二極體之製造方法，以防止源極/汲極與陰極層之間產生漏電。本發明的另一目的是提供一種有機發光二極體之製造方法，以避免於沈積保護層時所產生的缺陷貫穿保護層而造成漏電。 ^ 本發明提出一種有機發光二極體之製造方法，此方法係首先提供一基板，其中基板上已形成有數個呈陣列排列之薄膜電晶體，且每一薄膜電晶體包括形成有一閘極、一9347twf.ptd Page 5 554551 5. Description of the invention (2) " After that, a light emitting layer 116 and a cathode layer 118 are sequentially formed on the substrate 100. In this way, the production of an active organic light emitting diode is completed. However, usually, the cathode layer 118 of the active organic light emitting diode is completely covered on the thin film transistor and the anode layer. The thin film transistor and the cathode layer 118 are electrically isolated only by a protective layer. With reference to Figure 2, it is No. 1! In the figure, the source / drain 108a / 108b, the protective layer 110, the organic layer 116, and the cathode layer 118 are formed corresponding to a thin film transistor. In the above steps, if particles, defects, or arcing are generated during the process of depositing the protective layer n0, tiny holes will be generated in the formed protective layer 丨 10. (Pin hole). In addition, when forming the thin-film transistor's drain 108a / source 10a using aluminum metal, the uneven contour (JIi 11 Lock) of the source 108a / drain 108a will also cause subsequent The protective layer n0 formed thereon generates minute holes. And this tiny hole will form a leakage path (12) between the source 丨 08a / drain 丨 08b and the cathode layer 118, resulting in a reduction in the quality of the device. Therefore, an object of the present invention is to provide a method for manufacturing an organic light emitting diode, so as to prevent leakage between the source / drain and the cathode layer. Another object of the present invention is to provide a method for manufacturing an organic light emitting diode, so as to prevent defects generated during the deposition of the protective layer from penetrating the protective layer and causing leakage. ^ The present invention provides a method for manufacturing an organic light emitting diode. This method firstly provides a substrate, wherein a plurality of thin film transistors arranged in an array have been formed on the substrate, and each thin film transistor includes a gate, a

^4551 五、發明說明（3) 通道層、_、保護^ 一源極以及一汲極。接著在基板上方形成一第一程，I时覆蓋住薄膜電晶體。緊接著，進行一第一清洗製保1居附著於第一保護層上之微粒清除。繼之，在第一以將‘亡形成Γ第f保護層，並且進行一第二清洗製程，與後浐=於第一保護層上之微粒清除。其中，薄膜電晶體層而=Μ形成之陰極層之間係藉由第一保護層與第二保護藉由兩^隔離，且第一保護層與第二保護層之漏電途徑已透第二-人f積製程與清洗製程而阻斷。之後形成一開口穿陽極居=ί層與第二保護層，暴露出汲極。然後，形成一光屑i -蓋第二保護層與汲極。最後在基板上方形成一發 —盍陽極層，並且在發光層上形成一陰極層，以完成動式有機發光二極體之製作。係首11明提出一種有機發光二極體之製造方法，此方法 2 先提供一基板，其中基板上已形成有數個呈陣列埋列二膜電晶體以及與每一薄膜電晶體對應之一陽極層，其 =一薄膜電晶體包括一閘極、一通道層、一源極以及一 _ ^且陽極層係與汲極電性連接。之後，在基板上形成主保σ蔓層’覆蓋住薄膜電晶體。緊接著，進行一第一 /月洗製程，以將附著於第一保護層上之微粒清除。繼之，在第一保護層上形成一第二保護層，並且進行一第二清洗製程，以將附著於第二保護層上之微粒清除。其中，薄膜電晶體與後續所形成之陰極層之間係藉由第一保護層與第二保護^而電性隔離，且第一保護層與第二保護層4漏電途徑已藉由兩次沈積製程與清洗製程而阻斷。之後，在第^ 4551 V. Description of the invention (3) Channel layer, _, protection ^ A source and a drain. A first pass is then formed over the substrate, covering the thin film transistor at I. Next, a first cleaning process is performed to ensure that particles attached to the first protective layer are removed. Then, in the first step, a protective layer of Γ f is formed, and a second cleaning process is performed, followed by removal of particles on the first protective layer. Among them, the thin film transistor layer and the cathode layer formed by M are separated by the first protection layer and the second protection by two ^, and the leakage path of the first protection layer and the second protection layer has passed through the second- Human f product process and cleaning process are blocked. An opening is formed through the anode layer and the second protective layer to expose the drain electrode. Then, a light chip i-covers the second protective layer and the drain electrode. Finally, a tritium anode layer is formed over the substrate, and a cathode layer is formed on the light emitting layer to complete the production of the mobile organic light emitting diode. Department 11 proposed a method for manufacturing organic light-emitting diodes. This method 2 first provides a substrate, in which several substrate-embedded two-film transistors and an anode layer corresponding to each thin-film transistor have been formed on the substrate. A thin film transistor includes a gate electrode, a channel layer, a source electrode, and an anode layer, and the anode layer is electrically connected to the drain electrode. After that, a main σ-spread layer 'is formed on the substrate to cover the thin film transistor. Next, a first / monthly washing process is performed to remove particles attached to the first protective layer. Then, a second protective layer is formed on the first protective layer, and a second cleaning process is performed to remove particles attached to the second protective layer. Among them, the thin film transistor and the cathode layer formed subsequently are electrically isolated by the first protective layer and the second protective layer, and the leakage path of the first protective layer and the second protective layer 4 has been deposited twice. Process and cleaning processes are blocked. After

9347twf.ptd 第7頁 5545519347twf.ptd Page 7 554551

^保濩層上與陽極層上形成一發光層，然後再於發光層上 $成陰極層’以完成一主動式有機發光二極體之製作。A light emitting layer is formed on the protection layer and the anode layer, and then a cathode layer is formed on the light emitting layer to complete the fabrication of an active organic light emitting diode.

、，f發明提出一種防止元件產生漏電之方法，此方法係百先提供二基板，其中基板上已形成有一導電元件。之後在基板上形成一第一絕緣層，並且進行一第一清洗製程，以清除附著於第一絕緣層表面之微粒。繼之，在第一絕緣層上，成一第二絕緣層，並且進行一第二清洗製程，以清洗附耆於第二絕緣層表面之微粒。之後，才於在第二絕緣 2上形成一導電層。其中，導電元件與導電層之間係藉由、、、邑緣層與第二絕緣層而電性隔離，且第一絕緣層與第二絕緣層之漏電逯徑已藉由兩次沈積製程與清洗製程而阻 ★本^月之有機發光二極體之製造方法，可有效的阻斷薄膜電晶體之源極/汲極·與陰極層之間的漏電途徑，藉以防止漏電之情形。本發明之防止元件產生漏電之方法，其係利用多次沈積絕緣層之方法，並且加上清洗製程之搭配，因此可有效的阻斷絕緣層上下兩導電元件之間的縱向漏電途徑。為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下：圖式之標示說明： 100、200 :基底 1 0 2、2 0 2 :閘極結構The invention provides a method for preventing leakage of components. This method is to provide two substrates, in which a conductive component has been formed on the substrate. Then, a first insulating layer is formed on the substrate, and a first cleaning process is performed to remove particles attached to the surface of the first insulating layer. Then, a second insulating layer is formed on the first insulating layer, and a second cleaning process is performed to clean the particles attached to the surface of the second insulating layer. After that, a conductive layer is formed on the second insulation 2. Among them, the conductive element and the conductive layer are electrically isolated by the ,,, and edge layers and the second insulating layer, and the leakage paths of the first insulating layer and the second insulating layer have been separated by two deposition processes and Cleaning process hinders ★ This month's organic light emitting diode manufacturing method can effectively block the leakage path between the source / drain · and cathode layer of the thin film transistor to prevent leakage. The method for preventing leakage of components according to the present invention is a method of depositing an insulating layer multiple times, and coupled with a cleaning process, it can effectively block the vertical leakage path between two conductive elements above and below the insulating layer. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows: Symbols of the drawings: 100, 200 : Substrate 1 0 2, 2 0 2: gate structure

554551554551

I Ο 4、2 Ο 4 :閘極絕緣層 106、206 :通道層 108a/108b、208a/208b :源極/ 汲極 II 0、2 1 0 :保護層 112 ··開口 114、214 :陽極層 11 6、21 6 :有機層 11 8、2 1 8 :陰極層 120、122、124 :漏電途經I 〇 4, 2 〇 4: Gate insulating layers 106, 206: Channel layers 108a / 108b, 208a / 208b: Source / drain II 0, 2 1 0: Protective layer 112 · Opening 114, 214: Anode layer 11 6, 21 6: organic layer 11 8, 2 1 8: cathode layer 120, 122, 124: leakage path

實施例第1圖所不，其繪示為一種常用之主動式極體元件之結構剖面示意圖；第3圖機發先一。口，币ό圖所不，其終 & 本發明一較佳實施例之防止主、、曰不為依照工切忒有機發光二極體生漏電之示意圖。拉體70件^ 金屬 104 接著 106 請參照第1圖，本發明之有機發光二極體之法，係首先在一基板100上形成一圖案化之第一 102，其係作為一閘極之用。其中閘極1〇2之材質例如曰之後，在基板100與閘極102上形成一閘極絕緣層、其中閘極絕緣層104之材質例如是氮化矽或氧化；。Example Figure 1 shows a schematic cross-sectional view of the structure of a commonly used active polar element; Figure 3 shows the first. This is a schematic diagram of a preferred embodiment of the present invention to prevent the leakage of electricity generated by the main and the organic light-emitting diodes according to the present invention. 70 bodies ^ metal 104 and 106 Please refer to FIG. 1. The method of the organic light emitting diode of the present invention is to first form a patterned first 102 on a substrate 100, which is used as a gate electrode. . The material of the gate electrode 102 is, for example, a gate insulating layer is formed on the substrate 100 and the gate electrode 102, and the material of the gate insulating layer 104 is, for example, silicon nitride or oxide;

於閘極102上方之問極絕緣層1〇4上形成一通道其中，通道層1 0 6之材質例如是非晶矽。緊接著，通道層106上形成一圖案化之第二導電層1〇8以1〇化，其係作為一汲極/源極。其中，第二導電層之材質例如是鋁金，、屬。以構成一薄膜電晶體結構。 |A channel is formed on the gate insulating layer 104 above the gate electrode 102. The material of the channel layer 106 is, for example, amorphous silicon. Next, a patterned second conductive layer 108 is formed on the channel layer 106, which serves as a drain / source. The material of the second conductive layer is, for example, aluminum, gold, or metal. To form a thin film transistor structure. |

554551554551

電曰Ϊ後里Ϊ基f;0上方形成-保護層110，覆蓋住薄膜 aH Ba八中，本叙明之形成保護層11 〇之方法係為本發明之特徵，其詳細說明如下。凊參照第3圖，其係為對應於第J圖中形成有薄膜電晶體之源極/汲極l08a/108b、保護層11〇、有機層116以及陰極層118之處。在本發明中，保護層11〇係由至少二層以上 t保護層所構成。換言之，保護層i丨0係經由多次沈積製耘而形成。在本實施例中，係以形成兩層保護層丨i 、 11 0 b為例以詳細說明之。 ^首先，在基板100之上方形成第一層保護層ll〇a，覆蓋住薄膜電晶體。之後，為了確保所形成之第一保護層 11 Oa之表面未被沈積製程環境之微粒所附著，因此在形成第一保護層110a之後，便緊接著進行一清洗製程以去除附著於^ 一保護層110a表面之微粒。其中，此清洗製程例如疋一咼麼水清洗製程或是一超音波清洗製程。之後，於第一保護層110a上形成一第二保護層u〇b，並且在形成第二保護層11 Ob之後也接著進行一清洗製程，以清除附著於第二保護層11 0 b上之微粒。而此清洗製程亦可以是一高壓水清洗製程或是一超音波清洗製程。而所形成之第一保護層 11 0 a與第二保護層11 0 b係共同作為薄膜電晶體之保護層，並使薄膜電晶體與後續所形成之陰極層電性隔離。在本實施例中’第一保護層11 0a與第二保護層丨丨0b之材質例如是 ll化矽’且其厚度分別是介於1〇〇〇埃至5〇〇〇埃之間。在本發明中’第一保護層110a與第二保護層11〇b之厚度可以相 554551 五、發明說明（7) 同或不相同。由於本發明之保護層11 〇 a、11 0 b係分別由兩次沈積製程所形成。因此，當沈積製程中所形成之微粒、缺陷或電弧現象而造成漏電途徑1 2 2、1 2 4時，便可因多次沈積步驟之故而阻斷了漏電途徑122、124由上層陰極層118直接貫穿至下層源極/汲極1 08a/l 08b。A protective layer 110 is formed on the rear surface of the backing base f; 0, covering the film aH Ba, and the method of forming the protective layer 11 0 described in this description is a feature of the present invention, which is described in detail below.凊 Referring to FIG. 3, it corresponds to the source / drain 108a / 108b, the protective layer 110, the organic layer 116, and the cathode layer 118 corresponding to the thin-film transistor formed in FIG. J. In the present invention, the protective layer 110 is composed of at least two protective layers. In other words, the protective layer i 丨 0 is formed through multiple deposition processes. In this embodiment, the formation of two protective layers 丨 i and 11 0 b is taken as an example to describe in detail. First, a first protective layer 110a is formed over the substrate 100 to cover the thin film transistor. After that, in order to ensure that the surface of the first protective layer 11 Oa formed is not adhered by particles in the deposition process environment, after the first protective layer 110a is formed, a cleaning process is performed immediately to remove the adhesion to a protective layer. 110a surface particles. The cleaning process is, for example, a water cleaning process or an ultrasonic cleaning process. After that, a second protective layer u0b is formed on the first protective layer 110a, and after the second protective layer 11 Ob is formed, a cleaning process is performed to remove particles attached to the second protective layer 110b. . The cleaning process can also be a high-pressure water cleaning process or an ultrasonic cleaning process. The first protective layer 11 0 a and the second protective layer 11 0 b are used together as a protective layer of the thin film transistor, and the thin film transistor is electrically isolated from the cathode layer formed subsequently. In this embodiment, the materials of the 'first protective layer 110a and the second protective layer 丨 0b are, for example, siliconized silicon' and the thicknesses thereof are between 1,000 angstroms and 5,000 angstroms, respectively. In the present invention, the thicknesses of the 'first protective layer 110a and the second protective layer 110b may be the same. 554551 V. Description of the invention (7) Same or different. Because the protective layers 110a and 110b of the present invention are formed by two deposition processes, respectively. Therefore, when particles, defects, or arcs formed during the deposition process cause the leakage path 1 2 2, 1 24, the leakage path 122, 124 can be blocked by the upper cathode layer 118 due to multiple deposition steps. Directly through to the lower source / drain 1 08a / l 08b.

之後’於保護層11 〇 a、11 〇 b中形成一開口 J丨2穿透保護層llja、ll〇b，暴露出汲極108b。然後，形成一陽極肩 114覆蓋保護層丨10a、丨1〇b並填入開口丨12，而覆蓋汲極 l/08b。其中，陽極層丨14之材質例如是銦錫氧化物。之後，於基板1〇〇之上方形成一發光層116，覆蓋住陽極層 114八中’务光層11 6之材質例如是具有發光特性之有機合物。之後，再於有機層116上形成一陰極層ιΐ8，以 70成一主動式有機發光二極體之製作。、:t 月之防止主動式有機發光二極體產生漏電之方上。;二^於任何形式結構之主動式有機發光二極體元科極體HO在中間（ΐΤθ⑽ΗΜ16)之有機發光二圖所示。此種結構之主動式有機發光二極體元件如第4After that, an opening is formed in the protective layers 11 o a and 11 o b to penetrate through the protective layers 11a and 11b, and the drain electrode 108b is exposed. Then, an anode shoulder 114 is formed to cover the protective layers 10a, 10b, and fill the opening 12, and cover the drain electrode 1 / 08b. The material of the anode layer 14 is, for example, indium tin oxide. Thereafter, a light-emitting layer 116 is formed over the substrate 100 to cover the anode layer 114 and the 'work light layer 116'. The material is, for example, an organic compound having a light-emitting property. After that, a cathode layer ΐ8 is formed on the organic layer 116, and 70% of an active organic light emitting diode is fabricated. ,: T month to prevent the active organic light emitting diode from generating electricity. ; ^ Active organic light-emitting diodes in any form of structure The organic light-emitting diodes with the HO in the middle (ΐΤθ⑽ΗΜ16) are shown in the figure below. Active organic light-emitting diode elements of this structure are shown in Figure 4

俜首：i、、、Ϊ ^圖’此主動式有機發光二極體之製造方法 Πίί:基板2〇0上係形成數個呈陣列埋列Μ ^ 母一溥膜電晶體對庫甘士 — 薄膜電晶體包括一門β9η9 %極層214，其中母一 206、—源極20R $ ^ 〇2、—閘極絕緣層204、一通道層 ' a以及—汲極2〇8b，且陽極層214係與汲Head: i ,,, Ϊ ^ Figure 'This active organic light-emitting diode manufacturing method Πίί: Several substrates 200 are formed on the substrate 200 to form an array of M ^ female-溥 film transistor to Kugance — The thin film transistor includes a gate β9η9% electrode layer 214, of which the mother layer 206, the source electrode 20R $ ^ 2, the gate insulation layer 204, a channel layer 'a, and the drain electrode 208b, and the anode layer 214 is With

554551 五、發明說明（8) 極2 0 8b電+性連接。接著，在基板2〇〇之上方形成一保護層 2 1 0，覆蓋住薄膜電晶體。其中，保護層2 j 〇係由多次沈積製程所形成之多層保護層結構。而且，在每一保護層形成之後，都會接績緊進行一清洗製程，以將附著於保護層表面f微粒清，。而薄膜電晶體與後續所形成之陰極層之間便是，由保護層2 1 0而電性隔離，且保護層2丨〇中之漏電途徑已藉由多次沈積與清洗製程而阻斷。之後，再於保護層 210上與陽極層214上形成一發光層216 ,並且於發光層216 上形成陰極層218，以完成一主動式有機發光二極體之製作。第5圖所示，其係為測試習知主動式有機發光二極體兀件形成漏電途徑之圖片；第6圖所示，其係為測試本發明之主動式有機發光二極體元件形成漏電途徑之圖片。請參照第5圖，第5圖之主動式有機發光二極體元件，其保護層係以一次沈積製程形成約65〇〇埃之膜厚，以保護薄膜電晶體並且使薄膜電晶體與主動式有機發光二極體元件之陰極$電性隔離。為了測試保護層中是否有漏電途徑產生，本貫施例係將元件浸泡於丨5 %之氫氧化鉀（K⑽）溶 j，以檢驗保護層中是否有缺陷形成並檢視微孔洞之數里由第5圖中可看見，部分區域因氫氧化鉀溶液之⑽一入侵而與薄膜電晶體之源極/汲極（鋁金屬）反應便產生有局部黑塊之影像。這就是因為保護層中有微孔洞形成，因此風乳化鉀溶液能滲透至保護層下方而與金屬層反應。另外，請參照第6圖，第6圖之主動式有^發;;二極體554551 V. Description of the invention (8) The pole 2 0 8b is electrically connected. Next, a protective layer 210 is formed on the substrate 200 to cover the thin film transistor. Among them, the protective layer 2 j 〇 is a multilayer protective layer structure formed by multiple deposition processes. In addition, after each protective layer is formed, a cleaning process is performed immediately to remove particles f adhered to the surface of the protective layer. The thin film transistor and the cathode layer formed later are electrically isolated by the protective layer 210, and the leakage path in the protective layer 20 has been blocked by multiple deposition and cleaning processes. Then, a light-emitting layer 216 is formed on the protective layer 210 and the anode layer 214, and a cathode layer 218 is formed on the light-emitting layer 216 to complete the fabrication of an active organic light-emitting diode. As shown in FIG. 5, it is a picture for testing a leakage path of a conventional active organic light emitting diode element; FIG. 6 is a picture for testing an active organic light emitting diode element of the present invention to form a leakage current Picture of the way. Please refer to FIG. 5. The protective layer of the active organic light emitting diode device of FIG. 5 is formed with a film thickness of about 6500 angstroms in a single deposition process to protect the thin film transistor and make the thin film transistor and the active type The cathode of the organic light emitting diode element is electrically isolated. In order to test whether there is a leakage path in the protective layer, the present embodiment is to immerse the element in 5% potassium hydroxide (K⑽) solution, to check whether there is a defect in the protective layer and check the number of micro holes. It can be seen from Fig. 5 that, due to the invasion of the potassium hydroxide solution in some areas, the reaction with the source / drain electrode (aluminum metal) of the thin film transistor produces an image of local black blocks. This is because micropores are formed in the protective layer, so the air-emulsified potassium solution can penetrate below the protective layer and react with the metal layer. In addition, please refer to Figure 6, Figure 6 has the active type ^ hair; diode

9347twf.ptd 第12頁 554551 五、發明說明（9) 元件，其保護層係以二次沈積製程分別形成約3〇〇〇埃 6 0 0 0埃）膜厚之保護層，以保護薄膜電晶體並且使薄膜ς 晶體與主動式有機發光二極體元件之陰極層電性隔、。測試保護層是否有漏電途徑產生，本實施例係將消:包於15%之氫氧化鉀（Κ0Η)溶液，以檢驗保護層中是洞之數量。在第6圖中，並無如第5圖中： :塊二像產生。此結果表示利用本發明之方法屬）而與其反應。換言之，利用本發明之方法機發光二極趙元件之隆極層與薄膜“趙之：之且加上清洗製程之搭配，以有效的=膜蔓並情形。 °丨文』防止漏電之本發在主動式有機發光二極體元件上，下：】ί 在其他元件之絕緣層，藉以阻斷絕”卜下兩導電元件之間的縱向漏電途徑。阻斷I緣層上本發日月已以較佳實施例揭露如上，缺其並非用以限疋本發明，<壬何熟習此技 :、t並非用以和範圍内，者 < 你此％ $ 在不脫離本發明之精神範圍當視後潤飾，因此本發明之保護说附之申明專利乾圍所界定者為準。9347twf.ptd Page 12 554551 V. Description of the invention (9) The protective layer of the element is formed by a secondary deposition process to form a protective layer with a thickness of about 3,000 angstroms (600 angstroms, 600 angstroms) to protect the thin film transistor. In addition, the thin film and the crystal are electrically separated from the cathode layer of the active organic light emitting diode element. To test whether the protective layer has a leakage path, this embodiment is to eliminate: a 15% solution of potassium hydroxide (K0 溶液) in order to check the number of holes in the protective layer. In Figure 6, it is not as good as Figure 5:: Block two images are generated. This result indicates that the method of the present invention is used to react with it. In other words, using the method of the present invention to illuminate the polar layer of the light emitting diode Zhao element and the thin film "Zhao Zhi: plus the cleaning process, the effective = film spreading situation. ° 丨" prevents the leakage of electricity On the active organic light-emitting diode element, the following:] ί is on the insulating layer of the other element, so as to block the vertical leakage path between the two conductive elements. The blocking sun on the edge layer has been disclosed in the preferred embodiment as above, but it is not used to limit the present invention, < Ren He is familiar with this technique :, t is not used within the scope, or < you This% $ shall be regarded as retouched without departing from the spirit of the present invention. Therefore, the protection of the present invention shall be defined by the patent claims.

554551 圖式簡單說明第1圖為一種常用之主動式有機發光二極體元件之結構剖面示意圖；第2圖是習知主動式有機發光二極體元件於保護層中產生漏電之示意圖；第3圖是依照本發明一較佳實施例之防止主動式有機發光二極體元件產生漏電之示意圖；第4圖為另一種常用之主動式有機發光二極體元件之結構剖面示意圖；第5圖為測試習知主動式有機發光二極體元件形成漏電途徑之圖片；以及第6圖為測試利用本發明之一較佳實施例所製得之主動式有機發光二極體元件形成漏電途徑之圖片。554551 Brief description of the drawings. Figure 1 is a schematic cross-sectional view of the structure of a commonly used active organic light-emitting diode element. Figure 2 is a schematic diagram of a conventional active organic light-emitting diode element that generates electricity leakage in a protective layer. FIG. 4 is a schematic diagram of preventing leakage of an active organic light emitting diode element according to a preferred embodiment of the present invention; FIG. 4 is a schematic sectional view of a structure of another commonly used active organic light emitting diode element; FIG. 5 is The test is a picture of a leakage path formed by an active organic light emitting diode element; and FIG. 6 is a picture of a test path formed by an active organic light emitting diode element prepared by using a preferred embodiment of the present invention.

9347twf.ptd 第14頁9347twf.ptd Page 14

Claims

554551 六、申請專利範圍提供列之薄膜極、形成通保寶透该保保護層與该陽極層其中於該第一2. 如造方法， 3. 如造方法，中，更包释，在形 4. 如造方法，座水清洗 5. 如造方法，化矽，且 6 ·如沐方法’ 種有機一基板電晶體道層、護層，護層，該汲極以及在形成該絕緣層申請專其中該申請專其中在括在形成該第申請專其中該製程與申請專其中該其厚度申請專其中該發光二極體之製造方法，其步驟包括：，其中該基板上已形成有複數個呈陣列排，且每一該些薄膜電晶體包括形成有一閘一源極以及一汲極，之後在該基板之上方覆蓋住該些薄膜電晶體，並且形成一開口暴露出該汲極’之後形成一陽極層覆蓋該 ’並且在該基板上方形成一發光層，覆蓋該發光層上形成一陰極層；保護層之方法為先形成一第一絕緣層，再上形成一第二絕緣層。利範圍第1項所述之有機發光二極體之製第一絕緣層與該第二絕緣層之材質相同。利範圍第1項所述之有機發光二極體之製形成s亥第一絕緣層與§亥第二絕緣層之過程成該第一絕緣層之後便進行一第一清洗製二絕緣層之後便進行一第二清洗製程。利範圍第3項所述之有機發光二極體之製第一清洗製程與該第二清洗製程包括一高一超音波清洗製程。利範圍第1項所述之有機發光二極體之製第一絕緣層與該第二絕緣層之材質包括氮係分別為1 0 0 0埃至5 0 〇〇埃。利範圍第1項所述之有機發光二極體之製源極/汲極之材質包括鋁金屬。554551 VI. The scope of the patent application provides the thin film electrodes listed, forming the Baobao Baotou the protective protective layer and the anode layer which are in the first 2. Such as the manufacturing method, 3. Such as the manufacturing method, more inclusive, in shape 4. Such as manufacturing method, seat water cleaning 5. Such as manufacturing method, siliconization, and 6. · Rumu method 'organic-substrate transistor track layer, protective layer, protective layer, the drain electrode and the application of the insulating layer The method for manufacturing the light-emitting diode includes the process of forming the first application, the process and the application, and the thickness of the light-emitting diode. The steps include: where a plurality of substrates have been formed on the substrate. Formed in an array, and each of the thin film transistors includes a gate, a source, and a drain, and then the thin film transistors are covered over the substrate, and an opening is formed to expose the drain. An anode layer covers the 'and a light-emitting layer is formed over the substrate, and a cathode layer is formed on the light-emitting layer; a protective layer is formed by first forming a first insulation , Then a second insulating layer is formed. The first insulating layer and the second insulating layer are made of the same material. The organic light-emitting diodes described in the first range of the invention form the first insulating layer and the second insulating layer in the process of forming the first insulating layer, and then performing a first cleaning to form the second insulating layer. A second cleaning process is performed. The first cleaning process and the second cleaning process of the organic light emitting diode manufacturing system described in the third item of the invention include a high-frequency ultrasonic cleaning process. The organic light-emitting diodes described in the first range of the invention are made of a material including a first insulating layer and a second insulating layer, each of which has a nitrogen system of 100 angstroms to 500 angstroms. The material of the source / drain electrode of the organic light-emitting diode described in item 1 of the scope of interest includes aluminum metal.

9347twt'-Pl 第15頁 554551 六、申請專利範圍9347twt'-Pl Page 15 554551 6. Scope of patent application

造方法 8. 造方法化合物如申請專利範圍第1項所述之有機發光二極體之製其中该％極層之材質包括銦錫氧化物。如申請專利範圍第1項所述之有機發光二極體之製，其中該發光層之材質包括具有發光特性之一有才 % 一種有機發光二極體之製造方法，其步驟包括：薄膜ΪΪ:基板’該基板上已形成有複數個呈陣列排列之潯膜，曰a體以及與每一該些薄膜電晶體對應之一陽極層，Manufacturing method 8. Manufacturing method Compound The organic light-emitting diode described in item 1 of the patent application range, wherein the material of the% electrode layer includes indium tin oxide. The method of manufacturing an organic light-emitting diode according to item 1 of the scope of the patent application, wherein the material of the light-emitting layer includes one of the light-emitting characteristics of a method for manufacturing an organic light-emitting diode, and the steps include: Thin film: Substrate 'The substrate has been formed with a plurality of diaphragms arranged in an array, namely a body and an anode layer corresponding to each of these thin film transistors.

其中母一该些薄膜電晶體包括一閘極、一通道層、一源極以及一汲極，且該陽極層係與該汲極電性連接，之後在該基板上形成一保護層，覆蓋住該些薄膜電晶體，並且在^ 保護層上與違&極層上形成一發光層以及在該發光層上形成一陰極層；其中形成該保護層之方法為先形成一第一絕緣層，再於該第/絕緣層上形成一第二絕緣層。 1 〇 ·如申请專利範圍第9項所述之有機發光二極體之製造方法，其中該第一絕緣層與該第二絕緣層之材質相同。 ^ 11 ·如申請專利範圍第9項所述之有機發光二極體之製Among them, the thin film transistors include a gate electrode, a channel layer, a source electrode, and a drain electrode, and the anode layer is electrically connected to the drain electrode, and then a protective layer is formed on the substrate to cover the The thin film transistors, and a light emitting layer is formed on the protective layer and the anode layer, and a cathode layer is formed on the light emitting layer; wherein the method of forming the protective layer is to first form a first insulating layer, A second insulating layer is formed on the first / insulating layer. 10. The method for manufacturing an organic light emitting diode according to item 9 of the scope of the patent application, wherein the material of the first insulating layer and the second insulating layer are the same. ^ 11 The system of organic light emitting diode as described in item 9 of the scope of patent application

造方法’其中在形成該第一絕緣層與該第二絕緣層之過程中，更包括在形成該第一絕緣層之後便進行一第一清洗製擇，在形成該第二絕緣層之後便進行一第二清洗製程。 1 2 ·如申凊專利範圍第11項所述之有機發光二極體之製造方法’其中該第一清洗製程與該第二清洗製程包括一高麈水清洗製程與一超音波清洗製程。Manufacturing method, wherein in the process of forming the first insulating layer and the second insulating layer, it further includes performing a first cleaning process after forming the first insulating layer, and performing the first cleaning process after forming the second insulating layer. A second cleaning process. 1 2 · The manufacturing method of the organic light-emitting diode as described in item 11 of the patent scope of the application, wherein the first cleaning process and the second cleaning process include a high-pressure water cleaning process and an ultrasonic cleaning process.

JL·JL ·

第16頁 554551 六、申請專利範圍 1 3·如申請專利範圍第9項所述之有機發光二極體之製造方法，其中該第一絕緣層與該第二絕緣層之材質包括氮化矽，且其厚度係分別為丨〇〇〇埃至5 〇 0 〇埃之間。 1 4·如申請專利範圍第9項所述之有機發光二極體之製造方法，其中該源極/汲極之材質包括鋁金屬。 1 5 ·如申請專利範圍第9項所述之有機發光二極體之製造方法’其中該陽極層之材質包括姻锡氧化物。 1 6 ·如申請專利範圍第9項所述之有機發光二極體之製造方法，其中該發光層之材質包括具有發光特性之一有機化合物。 1 7· —種防止元件產生漏電之方法，包括：提供一基板；在該基板上形成一第一絕緣層；進行一第一清洗製程，以清洗該第一絕緣層之表面；在該第一絕緣層上形成一第二絕緣層；進行一第二清洗製程，以清洗該第二絕緣層之表面；以及在該第二絕緣層上形成一導電層 1 8·如申請專利範圍第丨7項所述之防止元件產生漏電之方法，其中該第一絕緣層與該第二絕緣層之材質相同。 1 9 ·如申請專利範圍第1 7項戶斤述之防止元件產生漏電之方法，其中該第一清洗製程包枯/鬲壓水清洗製程與一超音波清洗製程。 2 0.如申請專利範圍第1 7項所述之防止元件產生漏電Page 16 554551 6. Scope of patent application 1 3. The method for manufacturing an organic light emitting diode as described in item 9 of the scope of patent application, wherein the material of the first insulating layer and the second insulating layer includes silicon nitride, And its thickness is between 1000 Angstroms and 5000 Angstroms. 14. The method for manufacturing an organic light emitting diode as described in item 9 of the scope of patent application, wherein the material of the source / drain comprises aluminum metal. 1 5 · The method for manufacturing an organic light emitting diode as described in item 9 of the scope of the patent application, wherein the material of the anode layer includes tin oxide. 16 · The method for manufacturing an organic light-emitting diode according to item 9 of the scope of patent application, wherein the material of the light-emitting layer includes an organic compound having a light-emitting property. 17 · A method for preventing leakage of components, including: providing a substrate; forming a first insulating layer on the substrate; performing a first cleaning process to clean a surface of the first insulating layer; Forming a second insulating layer on the insulating layer; performing a second cleaning process to clean the surface of the second insulating layer; and forming a conductive layer on the second insulating layer The method for preventing leakage of components, wherein the material of the first insulating layer is the same as that of the second insulating layer. 19 · The method for preventing leakage of components as described in item 17 of the scope of the patent application, wherein the first cleaning process includes a dry / pressurized water cleaning process and an ultrasonic cleaning process. 2 0. Prevent leakage of components as described in item 17 of the scope of patent application

9347twf.ptd 第17頁 5545519347twf.ptd Page 17 554551

9347twf.ptd 第18頁9347twf.ptd Page 18