TW552179B - Polishing pad and method for manufacturing the same - Google Patents

Polishing pad and method for manufacturing the same Download PDF

Info

Publication number
TW552179B
TW552179B TW090116382A TW90116382A TW552179B TW 552179 B TW552179 B TW 552179B TW 090116382 A TW090116382 A TW 090116382A TW 90116382 A TW90116382 A TW 90116382A TW 552179 B TW552179 B TW 552179B
Authority
TW
Taiwan
Prior art keywords
polishing cloth
honing
scope
patent application
sheet
Prior art date
Application number
TW090116382A
Other languages
Chinese (zh)
Inventor
Shigeru Tominaga
Makoto Suzuki
Original Assignee
Roki Techno Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roki Techno Co Ltd filed Critical Roki Techno Co Ltd
Application granted granted Critical
Publication of TW552179B publication Critical patent/TW552179B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

An object of the present invention is to provide a polishing pad capable of obtaining a stable polishing performance and a method for manufacturing the same. The polishing pad according to the present invention is characterized that cut surfaces of not less than one kind of sheets are arranged spirally on the polishing surface of the polishing pad.

Description

552179 A7 B7 五、發明説明(I ) (發明的背景) (發明的領域) (請先閲讀背面之注意事項再填寫本頁) 本發明有關於半導體晶圓’液晶玻璃及硬碟用等之精 密硏磨用磨光布(硏磨布),詳述之有關於主要乃在於半 半導體裝置之製程上所使用之化學的機械硏磨用磨光布。 (先前技術) 隨著半導體電路之高積體化,微細化被實施了配線之 積層化。換言之被採用:在於半導體晶圓之表面上將配線 材予以圖樣形成,而以氧化矽等之絕緣物膜覆罩在此上面 再實施下一配線材之圖樣形成,依序反複此作業之製程。 配線之疊層(積層)數多時就在氧化砂等之絕緣物層 發生梯階差(段差),因此在實施下一配線材之圖樣形成 之前須要使梯階差去除而予以平坦化之必要,因此實施化 學的機械硏磨。 化學的機械硏磨乃一面供給硏磨液(下面稱〜漿液〃 )一面使用磨光布而將半導體晶圓硏磨成平坦者。惟對於 它之硏磨速度及硏磨精度等有優異之硏磨性能之要求。 經濟部智慧財產局員工消費合作社印製 特別是有關於硏磨精度有:須要滿足半導體晶圓之全 面之平坦性(下面稱 '、總括平面性〃)以及半導體晶圓之 微細之配線圖樣之平坦性(下面稱''局部平面性〃)之兩 方之必要,惟這兩性質乃屬於提高一方時即會降低另一方 之關係。 再者對於裝置性能有影響之重大之硏磨傷痕之發生( 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-4 - 552179 A7 _____B7 五、發明説明(2 ) 下面稱、、重大傷痕〃)乃應盡可能避免爲宜。硏磨速度, 硏磨精度及重大傷痕之發生乃如下面所述,依存於磨光布 之物性遠大於硏磨裝置之性能者。 (A )硏磨速度:漿液之保持性能良好,且該具有微 細之表面粗糙度之硏磨部之面積須要大。 (B )硏磨精度:對於總括平面度該壓縮彈性變形量 須大,對於局部平面度即磨光布之硬度須大。 (C)不會發生重大傷痕之磨光布:表面係多孔構造 ,硏磨屑得蓄存於多孔部,而硏磨部不會有硏磨屑。 (先前之磨光布之實情) 先前之磨光布乃,由漿液之保持性能及防止重大傷痕 之觀點而使用表面(硏磨面)係多孔構造者,特別是由於 可製出種種形狀、密度,氣泡徑之發泡體且耐摩耗性之理 由而多採用由烏拉丹發泡體所製之片狀之磨光布。 惟以往之烏拉丹發泡體所成之磨光布係經長時間硏磨 時即磨材或硏磨屑係塞入於磨光布表面之獨立氣泡之孔, 或由於孔之發生壓縮變形,因而有發生重大傷痕或降低硏 磨速度,而引起硏磨性能降低之問題。 因此使用數次時就需要實施以鑽石切削機來削取磨光 布之表面之修整工作,而每修整因此又需要實施硏磨性能 驗證,因此很不方便。 再者,在於製造之各批之間易發生發泡體之氣泡徑或 密度之偏差,而在同一批中也由於截斷之部位之不同而會 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X297公釐) _ 5 - (請先閱讀背面之注意事項再填寫本頁) 丁 -iT» f 經濟部智慧財產局員工消費合作社印製 552179 A7 B7 五、發明説明(3 ) 有偏差,因此具有很難獲得安定之硏磨性能之問題。 (請先閱讀背面之注意事項再填寫本頁) 再者亦有人提案:在於磨光布材料中分散坦持由無機 微粒子所成之磨粒,以資調整耐摩耗性而做成不需要實施 修整之(自行修整(調整)磨光布以及減低漿液之使用量 之磨光布,惟這種磨光布材料乃由獨立之發泡性所成’因 此磨光布全體地且均一地將發泡體之氣泡徑或密度,每一 批間地均能安定的製造乃很困難,且製成磨粒之能均一的 分散之成形體很困難,所以同樣地具有很難獲得安定之硏 磨性能之問題。 (發明槪說) 本發明之目的乃提供能獲得安定之硏磨性能之磨光布 爲目的。 又,本發明之目的乃提供,便磨粒之分散圖樣相同, 可減低漿液之使用量,且可以獲得安定之硏磨性能之磨光 布者。 又,本發明乃提供不需要修整之磨光布爲目的。 又本發明乃提供一種以工業的很容易的製造出磨光布 經濟部智慧財產局員工消費合作社印製 之方法爲目的。 爲了達成上述目的,本發明人等經集心積慮硏究出, 如果將(布)片之切斷面做爲磨光布之硏磨面時,就可以 使硏磨面之微細構造大約同一,因此可以獲得安定之硏磨 性能之事實,而到達了本發明,而以往將(布)片之切斷 面供於磨光布之硏磨面而使用乃從來没有人嘗試,且未見 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 6 - 552179 A7 ____ B7 五、發明説明(4 ) 此種構想之揭示者。 (請先閱讀背面之注意事項再填寫本頁) 詳述之,本發明乃:一種以上之片(磨光布材料之布 片)之切斷面係蝸線狀地配置於磨光布之硏磨面(製品上 )爲其特徵者。 如果以(布)片之切斷面爲用於硏磨面時’即由同一 片能獲得相同之硏磨面,同時硏磨面之被削去之後其內部 仍然是同一硏磨面,因此得於獲得安定之硏磨性能。 如果以片之表面做爲硏磨面時,由於將摩擦之纖維之 長度方向,因此纖維容易脫落(被拔下)。惟將切斷面做 爲硏磨面時,即將摩擦纖維之端面,因此雖然會摩損卻不 會被拔去,因而可能獲得安定且優異之硏磨性能。 本發明之磨光布乃蝸線狀地配設布之切斷面,由於如 此構成之結果,在於切斷面硏磨之下其層間之剝離很少, 相對的如以疊層者之切斷面做爲硏磨面時,即由硏磨之阻 抗等而容易發生層間剝離,做爲磨光布而在產業上不勘使 用。 經濟部智慧財產局員工消費合作社印製 又,將上述片之至少1種係使用磨粒片時,如果對於 該磨粒片略均一地塗佈磨粒含有液時,雖然在表面與內部 而磨粒含有量不同時,由於片之切斷面及片表面及內部之 磨粒含有之圖樣係略同一,所以磨光布之表面之被削取之 下,經常可以將略同一之磨粒圖樣做爲硏磨面,所以可以 獲得安定之硏磨性能。 再者,將片蝸線狀的捲繞而成形就可以很容易的製造 本發明之磨光布。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) Γ7Τ 552179 A7 B7 五、發明説明(5 ) (請先閱讀背面之注意事項再填寫本頁) 依本發明時,藉由選擇各片之厚度尺寸而可以一定的 控制由各片之切斷面之物性之硏磨機能部位之微細構造, 因此可以提供硏磨能力上不會有偏差之安定之磨光布也。 關於本發明之上述以及其他目的以及應用得由下面之 具體之說明而更能淸楚者。 (實施形態之具體的說明) 下面說明本發明之實施形態。 P. 使用於本發明之(布)片係具有蝸線狀的捲取之機械 的物性就可用並不特別限定。所使用之片之厚度爲 〇·05〜10mm程度,最好爲〇·1〜3mm。如果 片厚不達〇 · 〇 5 m m時各片間之接著劑係相對的增加因 而片切斷面之硏磨功能不能達成其功能。又超過1 〇 m m 時,片切斷面之硏磨功能之影響過大,而硏磨能力將受片 切斷面之物性所支配,很難強勁的捲繞而變軟捲繞不易達 成磨光布之功能。 經濟部智慧財產局員工消費合作社印製 本發明中可使用之(布)片有,織布,不織布,毛氈 ,以及紙張之形態地被加工成片狀之化學合成纖維,無機 纖維,彈性高分子片,及含有無機微粒子之片等均可使用 ,惟以空隙率較大,親水性者爲宜。 使用於本發明之片之種類乃1種以上亦可以。惟適合 於上述(A )〜(C )之要求特性而組合2種以上爲合宜 。特別是將含有無機微粒子之片,與纖維狀片組合而使用 即甚合宜。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -8 · 552179 A7 B7 五、發明説明(6 ) (請先閱讀背面之注意事項再填寫本頁) 本發明之磨粘片乃使用,將磨粒分散塡充於合成高分 子者,或將磨粒分散於結合劑者含浸塡充於纖維狀片就可 以’塗佈磨粒液之後例如經過輥壓就可以使磨粒之對於片 之含有量更能均一化。 本發明所使用之磨粒乃,可舉出氧化砂,氧化鈽,氧 化鋁,二氧化錳,氧化鐵,氧化鋅,碳化矽,碳化硼,合 成鑽石,以及電氣石粉體之單獨或二種以上等。所使用之 磨粒本身乃使用該使用於此種目的之以往習知者就可以, 惟與所使用之漿液(硏磨液)中之磨粒同種爲宜。 所使用之磨粒之粒子徑乃以0 . 0 1〜1 0//m爲合 宜,如果在此範圍就能高密度且均一化地予以分散,惟粒 子徑超過1 0 //m時將成爲重大傷痕之原因。 分散磨粒之結合劑有以水或D M F,D E F等之有機 溶媒稀釋聚丙烯系,環氧系,聚烏拉丹系等之高分子重合 體者係可以合宜的使用,磨粒液中之磨粒之含有量最好以 50〜90% (重量)爲宜。 經濟部智慧財產局員工消費合作社印製 上述本發明之磨光布乃,最好是對於片一面塗佈或含 浸結著劑而蝸線狀捲繞成形爲圓筒狀就可以製造,結著劑 乃只使用於捲繞之末端亦可以。再者,如果捲繞之後密嵌 於圓筒性之彈性體時即完全不使用結著劑亦無妨。 將形成爲圓筒形之成形物在於與捲軸成垂直或交叉之 方向予以切斷而將切斷面供硏磨面做爲本發明之磨光布, 或將片一面切片成磨光布之厚度尺寸一面捲繞於軸直接用 做本發明之磨光布就可以。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) -9 - 552179 A7 B7__ 五、發明説明(7 ) (請先閱讀背面之注意事項再填寫本頁) 做爲本發明之 '' 片〃,而以磨粒片之單獨或磨粒片及 纖維狀片時,即,做成可以減低漿液之使用量之磨光布, 又此磨光布係磨光布表面係每次僅微微地被削去一層而已 所以不需要施予修整(dressing )。 採用此種磨光布時,由於藉由塡充於磨光布基材之磨 粒而得賦予硏磨性能,同時磨光布基材具有適度之摩耗性 ,因此由晶圓之硏磨枚數而依序被微微的削取磨光布之表 面而得以新的表面來實施硏磨也。 使用上述之磨光布就能獲得安定之品質之硏磨面之理 由乃··可能是如果在於片上略均一的塗佈磨粒含有液時, 雖然在表面及內部而磨粒含有量不同之下,片切斷面與內 部之磨粒含有圖樣乃略同一,因此得經常同一之硏磨條件 而可以硏磨。 以往在於薄的片含有磨粒,以及將它捲成卷筒狀來用 於切斷將切斷面做爲硏磨面均完全未人所知之情形。 以上述方法所形成之磨光布乃拔出了心軸之孔係形成 於中央,雖然由其目的而有時可以直接用做磨光布,惟以 合成樹脂來塡埋該孔而做爲磨光布比較合宜。 經濟部智慧財產局員工消費合作社印製 爲了提高片間之結著,在於捲繞片之際’一面塗佈做 爲結著劑之合成高分子液一面捲繞爲宜。 做爲結著材之合成高分子液乃可以使用:丙烯系,環氧 系,聚酯系以及烏拉丹系等熱硬化性樹脂之溶劑溶液或水 性乳化液,或使用熱可塑性樹脂而藉由加熱封熱法而使之 結著亦可,綜而言之,在本發明中結著劑係包含有接著劑 ^氏張尺度適用中國國家標準(CNS ) A4規格(210X297公釐1 " 1〇 _ " 552179 A7 B7_ 五、發明説明(8 ) 之槪念之下所使用,只要能貼合片與片之間就可以不做特 別之限定。 (請先閱讀背面之注意事項再填寫本頁) 上述結著材乃除了具有片間之結著之功能之外亦可以 使它控制塗佈厚度而做爲具有硏磨領域之功能’又使之具 有磨光布之彈性壓縮率之調整材之功能者。 下面舉實施例再說明本發明,惟本發明並不侷限於下 述之各實施例者。 實施例1 在於甲基丙烯酸甲酯水溶液中均一分散做爲磨粒之平 均粒徑1 // m之氧化鈽而作成磨粒液。 將上述磨粒液一面塗佈於寬2 0 Omm,平量2 0 g / m 2之粘結型織物P E T不織布二片之間一面予以滾壓 成形後,予以加熱乾燥使甲基丙烯酸甲酯硬做成厚度 0.3mm之含有無機微粒子之片(A),所獲得之片( A )之秤量乃以6 0 0 g/m2而對於片之氧化姉之含有量 爲7 9重量%。 經濟部智慧財產局員工消費合作社印製 於上述含有無機微粒子之片(A ) —面以轉印輥塗佈 上述之甲基丙烯酸甲酯水溶液,一面以接觸輥加壓捲繞成 直徑2 0 0 m m,加熱乾燥使之硬化後成成本發明之磨光 布。 所作成之磨光布之表面(硏磨面)硬度係ASKERC型 硬度計9 6度,密度係2 · 1 2 g / c m 3。 使用所獲得之磨光布,而一面供給混合有氧化鈽微粉 本紙張尺度適用中國國家標準(CNS ) A4規格(210X29*7公釐) _ ” " 552179 A7 B7 五、發明説明(9 ) 末之漿液硏磨了具有氧化膜之矽晶圓,硏磨速度5 0 0 0 A /分鐘,結果,晶圓上連微傷痕沒有觀察到。 (請先閱讀背面之注意事項再填寫本頁) 又使用所獲得之磨光布一面供給純水一面硏磨具有氧 化膜之矽晶圓,結果硏磨速度爲1 5 0 0人/分,晶圓上 觀察不到微傷痕。 實施例2 對於含有上述無機微粒子之片(A)及寬度2 0 0 mm,粹量8 0 g/m2之粘結型P E T不織布,一面以轉 印輥塗佈甲基丙烯酸甲酯水溶液一面以接觸輥加壓捲繞到 2 0 0 m m,加熱乾燥使之硬化之後,予以切片作成本發 明之磨光布。 作成之磨光布之表面(硏磨面)硬度乃以ASKERC型 硬度計爲90度密度係2·85g/cm3。 使用獲得之磨光布,一面供給混合氧化鈽之微粉末之 漿液一面硏磨具有氧化膜之矽晶圓,硏磨速度係3 0 0 0 A,在於晶圓上未觀察到微傷痕。 經濟部智慧財產局員工消費合作社印製 實施例3 一面在於寬2 0 0mm,秤量2 0 g/m2之粘結型 P E T不織布上塗佈甲基丙烯酸甲酯水溶液予以一面輥壓 形成,使之加熱乾燥而使甲基丙烯酸甲酯水溶液硬化’作 成厚度0.1mm之片(B)。552179 A7 B7 V. Description of the invention (I) (Background of the invention) (Field of invention) (Please read the notes on the back before filling out this page) The present invention relates to the precision of semiconductor wafers, liquid crystal glass and hard disks. Honing cloths (Honing cloths) are detailed about chemical mechanical honing cloths mainly used in the process of semi-semiconductor devices. (Prior art) As semiconductor circuits have become more integrated, miniaturization has been implemented by wiring layering. In other words, it is adopted: the wiring material is patterned on the surface of the semiconductor wafer, and an insulating film such as silicon oxide is covered thereon, and then the next wiring material pattern is formed, and the process of repeating this operation is sequentially repeated. When the number of wiring layers (layers) is large, a step difference (segment difference) occurs in the insulating layer such as oxidized sand. Therefore, it is necessary to remove and level the step difference before implementing the next wiring material pattern formation. Therefore, chemical mechanical honing is implemented. Chemical mechanical honing is a method of honing a semiconductor wafer to a flat surface while using a polishing cloth while supplying a honing liquid (hereinafter referred to as a "slurry"). However, it requires excellent honing performance for its honing speed and honing accuracy. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, in particular, the honing accuracy is as follows: it must meet the overall flatness of the semiconductor wafer (hereinafter referred to as ', collective planarity') and the flatness of the fine wiring pattern of the semiconductor wafer (Hereinafter referred to as `` local planarity ''), but these two properties belong to the relationship that will reduce the other party when one party is increased. In addition, the occurrence of major honing scars that have an impact on the performance of the device (This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -4-552179 A7 _____B7 V. Description of the invention (2) hereinafter, Major injuries 〃) should be avoided as much as possible. The honing speed, honing accuracy, and the occurrence of major scars are as described below, depending on the physical properties of the polishing cloth that are far greater than the performance of the honing device. (A) Honing speed: The slurry has good holding performance, and the area of the honing portion having a fine surface roughness needs to be large. (B) Honing accuracy: For overall flatness, the amount of compressive elastic deformation must be large, and for local flatness, the hardness of the polishing cloth must be large. (C) Polished cloth without major scars: the surface is of a porous structure, and honing debris must be stored in the porous part, while honing part will not have honing debris. (The truth of the previous polishing cloth) The previous polishing cloth is a porous structure with a surface (honed surface) from the viewpoint of maintaining the performance of the slurry and preventing major scars, especially because it can produce various shapes and densities For reasons of bubble size and abrasion resistance, sheet-shaped polishing cloths made of urethane foam are mostly used. However, in the past, the polishing cloth made of the urethane foam was a hole of independent air bubbles that was inserted into the surface of the polishing cloth by abrasive materials or honing debris after a long time honing, or due to compression deformation of the hole, Therefore, there is a problem that a large scar occurs or the honing speed is reduced, resulting in a reduction in honing performance. Therefore, when using it several times, it is necessary to perform a dressing work with a diamond cutting machine to remove the surface of the polishing cloth, and each dressing needs to perform honing performance verification, which is very inconvenient. In addition, because the deviation of the bubble diameter or density of the foam is easy to occur between the batches produced, and because of the difference in the truncated parts in the same batch, the Chinese paper standard (CNS) A4 specification ( 210 X297 mm) _ 5-(Please read the notes on the back before filling out this page) Ding-iT »f Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 552179 A7 B7 5. The description of the invention (3) is biased, so There is a problem that it is difficult to obtain stable honing performance. (Please read the precautions on the back before filling in this page.) There is also a proposal: Disperse and hold abrasive particles made of inorganic fine particles in the polishing cloth material to adjust the abrasion resistance without trimming. (Self-trimming (adjusting) polishing cloth and polishing cloth to reduce the amount of slurry used, but the material of this polishing cloth is made of independent foamability. Therefore, the polishing cloth will foam uniformly and uniformly.) It is difficult to manufacture the bubble diameter or density of the body stably between batches, and it is difficult to make a uniformly dispersed shaped body of abrasive particles, so it is also difficult to obtain stable honing performance. Problem. (Invention narration) The purpose of the present invention is to provide a polishing cloth which can obtain stable honing performance. In addition, the purpose of the present invention is to provide the same pattern of the abrasive grains, which can reduce the amount of slurry used. And a polishing cloth that can obtain stable honing performance. Also, the present invention is to provide a polishing cloth that does not require trimming. The present invention also provides an economical and easy-to-manufacture polishing cloth for industrial production. In order to achieve the above purpose, the present inventors have worked hard to find out if the cut surface of the (cloth) sheet is used as the honing surface of the polishing cloth. At this time, the fine structure of the honing surface can be made approximately the same, so the fact that stable honing performance can be obtained has reached the present invention. In the past, the cut surface of the (cloth) sheet was used for the honing of the polishing cloth. No one has tried it in the face, and it has not been seen that this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 6-552179 A7 ____ B7 V. Description of the invention (4) The revealer of this concept. (Please read the precautions on the back before filling this page.) In detail, the present invention is: the cut surface of more than one piece (the cloth material of the polishing cloth) is snail-shaped and arranged on the polishing cloth. The surface (on the product) is its characteristic. If the cut surface of the (cloth) sheet is used for the honing surface, then the same honing surface can be obtained from the same sheet, and the honing surface is cut off at the same time. The interior is still the same honing surface, so it is obtained Set the honing performance. If the surface of the sheet is used as the honing surface, because the length of the frictional fiber is the direction of the fiber, the fiber is easy to fall off (unplug). However, when the cut surface is used as the honing surface, it is about to rub. The end face of the fiber is abraded, but it is not removed, so it is possible to obtain stable and excellent honing performance. The polishing cloth of the present invention is a cut surface in which the cloth is arranged in a snail shape. Under the honing of the cut surface, there is little peeling between the layers. In contrast, when the cut surface of the stacker is used as the honing surface, the interlayer peeling is easily caused by the resistance of the honing. It is not used in the industry. It is printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. When at least one of the above-mentioned tablets uses abrasive particles, if the abrasive particles are coated uniformly, the abrasive particles contain In the case of liquid, although the content of abrasive particles is different between the surface and the interior, the cut surface of the sheet and the pattern on the surface and the interior of the abrasive grains are slightly the same, so the surface of the polishing cloth is shaved off. Can often be the same As WH grinding grain pattern, it is possible to obtain a stable grinding performance of the WH. Furthermore, the polishing cloth of the present invention can be easily manufactured by winding and forming the snail in a wire shape. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Γ7Τ 552179 A7 B7 V. Description of the invention (5) (Please read the precautions on the back before filling this page) According to the present invention, by selecting each The thickness of the sheet can be controlled to a certain extent by the fine structure of the honing function of the physical properties of the cut surface of each sheet. Therefore, it is possible to provide a stable polishing cloth that has no deviation in honing ability. The above and other objects and applications of the present invention can be better understood by the following detailed description. (Specific description of the embodiment) The embodiment of the present invention will be described below. P. The physical properties of the (cloth) sheet used in the present invention having a snail-like winding mechanism can be used without particular limitation. The thickness of the sheet to be used is about 0.05 to 10 mm, preferably 0.1 to 3 mm. If the thickness of the sheet is less than 0.5 mm, the adhesive system between the sheets will increase relatively, and the honing function of the cut surface of the sheet cannot achieve its function. When it exceeds 10mm, the influence of the honing function of the cut surface of the sheet is too large, and the honing capacity will be governed by the physical properties of the cut surface of the sheet. It is difficult to wind strongly and become soft, and it is difficult to achieve a polishing cloth. Its function. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the (cloth) sheets that can be used in the present invention are woven, non-woven, felt, and paper in the form of chemical synthetic fibers, inorganic fibers, and elastic polymers. Both tablets and tablets containing inorganic fine particles can be used, but those with larger porosity and hydrophilicity are preferred. The type of the tablet used in the present invention may be one or more. However, it is appropriate to combine two or more types with the characteristics required by the above (A) to (C). In particular, a sheet containing inorganic fine particles is preferably used in combination with a fibrous sheet. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -8 · 552179 A7 B7 V. Description of the invention (6) (Please read the precautions on the back before filling this page) The abrasive sheet of this invention is It can be used by dispersing abrasive particles in synthetic polymers, or impregnating abrasive particles in binders and impregnating them with fibrous sheets. After coating the abrasive liquid, the abrasive particles can be made into The tablet content can be more uniform. The abrasive grains used in the present invention include single or two types of sand oxide, hafnium oxide, alumina, manganese dioxide, iron oxide, zinc oxide, silicon carbide, boron carbide, synthetic diamond, and tourmaline powder. And so on. The abrasive grains used can be used by those who are conventionally used for this purpose, but the same kind of abrasive grains as used in the slurry (honing fluid) is appropriate. The particle diameter of the abrasive particles used is preferably 0. 0 1 to 1 0 // m. If it is in this range, it can be dispersed with high density and uniformity. However, when the particle diameter exceeds 1 0 // m, it will become Causes of major scars. The binder for dispersing abrasive grains is diluted with organic solvents such as water or DMF, DEF, polypropylene, epoxy, poly-urethane, etc., which can be suitably used. The abrasive grains in the abrasive fluid The content is preferably 50 to 90% by weight. The consumer cloth of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the above-mentioned polishing cloth of the present invention. It is best to manufacture the coating by applying or impregnating the adhesive on one side of the sheet and winding it into a cylindrical shape. It can be used only at the end of winding. In addition, it is not necessary to use an adhesive at all when it is tightly embedded in a cylindrical elastomer after winding. The cylindrical shaped article is cut in a direction perpendicular to or intersecting with the reel, and the cut surface for the honing surface is used as the polishing cloth of the present invention, or one side is sliced into the thickness of the polishing cloth. One side of the size can be wound around the shaft and used directly as the polishing cloth of the present invention. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -9-552179 A7 B7__ V. Description of the invention (7) (Please read the precautions on the back before filling this page) as the invention " Sheets, and when using abrasive grains alone or abrasive grains and fibrous sheets, that is, to make a polishing cloth that can reduce the amount of slurry used, and this polishing cloth is a surface of the polishing cloth only slightly The ground is just stripped away so there is no need for dressing. When using such a polishing cloth, since the polishing performance is imparted to the polishing cloth substrate by abrasive grains, and the polishing cloth substrate has moderate abrasion resistance, the number of wafers to be polished is The surface of the polishing cloth was slightly scraped in order to obtain a new surface for honing. The reason why the above polishing cloth can be used to obtain a stable quality honing surface is probably that if the coating abrasive grains containing liquid are uniformly coated on the sheet, the content of the abrasive grains is different on the surface and inside. The cut surface of the film and the internal abrasive grains have slightly the same pattern, so they must be honed under the same honing conditions. In the past, it is unknown that a thin sheet contains abrasive grains and that it is rolled into a roll to cut the cut surface as a honing surface. The polishing cloth formed by the above method is formed by pulling out the mandrel hole system in the center. Although it can sometimes be used directly as a polishing cloth for its purpose, the hole is buried with synthetic resin for polishing. Light cloth is more suitable. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In order to improve the adhesion between the films, it is advisable to wind the film with a synthetic polymer liquid coated on one side as a binding agent. Synthetic polymer liquids used as binding materials can be used: solvent solutions or aqueous emulsions of thermosetting resins such as acrylic, epoxy, polyester, and urethane, or using thermoplastic resins and heating The heat sealing method can also be used for binding. To sum up, in the present invention, the bonding agent system contains an adhesive. The Zhang scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm 1 " 1〇 _ " 552179 A7 B7_ V. It is used under the concept of invention description (8), as long as it can fit between the films, there is no special limitation. (Please read the notes on the back before filling this page ) The above-mentioned bonding material is used for adjusting the thickness of the coating in addition to the function of bonding between the sheets, and it can be used as a function of the honing field to adjust the elastic compression ratio of the polishing cloth. Functionalists. The present invention will be described below with examples, but the present invention is not limited to the following examples. Example 1 is that the average particle diameter of the abrasive particles is uniformly dispersed in the aqueous methyl methacrylate solution 1 / / m of osmium oxide to make abrasive particles The above-mentioned abrasive liquid was coated on the side between two sheets of adhesive-bonded PET non-woven fabric with a width of 20 mm and a flat weight of 20 g / m 2, and was then heated and dried to make methyl methacrylate. The sheet (A) containing inorganic fine particles having a thickness of 0.3 mm was hard-made, and the weight of the obtained sheet (A) was 600 g / m2, and the content of the oxide of the sheet was 79% by weight. The Intellectual Property Bureau employee consumer cooperative printed the above-mentioned sheet (A) containing inorganic fine particles on one side with a transfer roller to coat the above-mentioned methyl methacrylate aqueous solution, and on the other side, it was pressure-wound with a contact roller to a diameter of 200 mm. After heating and drying, the hardened cloth becomes the polished cloth of the present invention. The surface (honed surface) of the finished polished cloth is 96 degrees as an ASKERC hardness meter, and the density is 2 · 1 2 g / cm 3. Obtained polishing cloth, and one side is supplied with mixed rhenium oxide powder. The paper size is applicable to Chinese National Standard (CNS) A4 (210X29 * 7 mm) _ "" 552179 A7 B7 V. The slurry at the end of the description of the invention (9) Honed silicon wafer with oxide film, honing speed 5 0 0 0 A / min. As a result, no micro-scratches were observed on the wafer. (Please read the precautions on the back before filling in this page.) Then use the obtained polishing cloth to supply pure water while honing silicon with an oxide film. As a result, the honing speed of the wafer was 1500 persons / min, and no micro-scratch was observed on the wafer. Example 2 For the sheet (A) containing the above-mentioned inorganic fine particles and a width of 200 mm, the volume was 80 g / m2 adhesive PET non-woven fabric, while the methyl methacrylate aqueous solution is coated with a transfer roller, and it is wound up to 200 mm with a contact roller. After heating and drying to harden it, it is sliced for the grinding of the invention. Light cloth. The hardness of the surface (honed surface) of the finished polished cloth is 90 ° with an ASKERC hardness meter and a density of 2.85 g / cm3. Using the obtained polishing cloth, a silicon wafer having an oxide film was honed while supplying the slurry mixed with micro powder of hafnium oxide, and the honing speed was 3 0 0 A. No micro-scratch was observed on the wafer. Printed in Example 3 by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. One side is a bonded PET nonwoven fabric with a width of 200 mm and a weighing capacity of 20 g / m2. A methyl methacrylate aqueous solution is coated and rolled on one side to heat it. It dried and hardened the methyl methacrylate aqueous solution ', and made the sheet | seat (B) of thickness 0.1mm.

一面以轉印塗佈甲基丙烯酸甲酯水溶液於上述片(B -12- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 552179 A7 B7 五、發明説明(1〇 ) (請先閱讀背面之注意事項再填寫本頁) )與寬2 0 Omm秤量8 0 g/m2之粘結型P E T不織布 ,以接觸輥加壓,捲繞到直徑2 0 0 m m,加熱乾燥使之 硬化後切片形成本發明之磨光布。 作成之磨光布之表面(硏磨面)硬度爲ASKERC型硬 度計85度寬度係1·5g/cm3。 使用所獲得之磨光布,一面供給含有氧化鈽之微粉末 之漿液,一面硏磨具有氧化膜之矽晶圓,硏磨速度係 2500A/分鐘。 在於晶圓上沒有觀寬到微傷痕。 實施例4 在於水溶性聚烏拉丹(聚氨基甲酸乙酯)乳化液中, ,均一分散做爲磨粒之平均粒徑1 // m之氧化鈽作成磨粒 液。 經濟部智慧財產局員工消費合作社印製 將上述磨粒液一面塗佈於寬1 0 0 m m,秤量2 0 g / m 2之粘結型P E T不織布二片之間而予以輥壓成形’ 加熱乾燥作成厚度0·4mm之含有無機微粒子之片(C ),所獲得之片(C )之秤量爲8 0 0 g /m 2,對於片之 氧化鈽之含有量爲8 2重量%。 一面塗佈上述水溶性聚烏拉丹乳化液一面將含有上述 無機微粒子之片(C )及寬度1 0 0mm秤量8 0 g/m2 之粘結型P E T不織布,一面以接觸輥而加壓,在於直徑 6 0 m m之心軸上捲繞至直徑6 1 0 m m,加熱硬化之後 ,以切片機切片成2 · 5 m m厚之片之後’在於拔取心軸 -13- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 552179 A7 B7 五、發明説明(11 ) 之中央之孔粘接直徑60mm厚度2·5mm之烏拉丹片 ,作成了本發明之磨光布。 (請先閱讀背面之注意事項再填寫本頁) 作成之磨光布之表面(硏磨面)硬度爲ASKERC型硬 度計爲9 6度1 k g f負載之壓縮率係5%。 本發明之磨光布係由於可以將片切斷面之藉由物性之 硏磨功能部位之微細構造控制於一定,所以可以形成爲硏 磨能力上沒有偏差之安定之磨光布。 再者,本發明之磨光布乃,將片之切斷面做爲硏磨面 ,因此從同一硏磨功能之片而可以獲得相同之硏磨面,又 硏磨面之被削取之後,其內部仍然是相同之硏磨面,因此 可以獲得安定之硏磨性能。 又如將片之表面供爲硏磨面時,由於將成爲摩擦於纖 維之長度,所以纖維將容易脫落,惟由於將切斷面供爲硏 磨面因此將形成摩擦纖維之端面,所以纖維摩耗也不會脫 落,由而可以獲得安定且優異之硏磨性能。 再者本發明之磨光布乃將片之切斷面配設成蝸線狀, 由於構成這種結果激烈的硏磨切斷面也不易發生層間剝離 〇 經濟部智慧財產局員工消費合作社印製 依本發明時,可以解消以往之由發泡烏拉丹所成之狀 之磨光布之缺點,可以獲得安定之硏磨性能,同時磨光布 之表面係每次被削去微細所以可以獲得不需要修整之利點 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)_ 14 -One side is transfer-coated with the methyl methacrylate aqueous solution on the above sheet (B -12- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 552179 A7 B7 V. Description of the invention (1〇) (Please Read the precautions on the back before filling in this page)) Bonded PET nonwoven fabric with a width of 20 Omm and a weighing of 80 g / m2, press with a contact roller, roll it to a diameter of 200 mm, heat and dry it to harden The back cut forms the polishing cloth of the present invention. The hardness of the surface (honed surface) of the finished polishing cloth was 85 ° with an ASKERC hardness meter and the width was 1.5 g / cm3. Using the obtained polishing cloth, a silicon wafer having an oxide film was honed while supplying a slurry containing fine powder of hafnium oxide, and the honing speed was 2500 A / min. The reason is that there are no microscopic flaws on the wafer. Example 4 In a water-soluble polyurethane (polyurethane) emulsion, homogeneous dispersion was used as the abrasive grains, and thorium oxide having an average particle diameter of 1 // m was used as the abrasive grain liquid. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the above abrasive grain liquid was coated on one side between two sheets of bonded PET non-woven fabric with a width of 100 mm and a weighing capacity of 20 g / m 2, and was roll-formed. A sheet (C) containing inorganic fine particles having a thickness of 0.4 mm was prepared, and the weight of the obtained sheet (C) was 800 g / m 2, and the content of hafnium oxide for the sheet was 82% by weight. While coating the above water-soluble polyurethane emulsion, the sheet (C) containing the above-mentioned inorganic fine particles and a bonding type PET non-woven fabric with a width of 100 mm and a weighing capacity of 80 g / m2 were applied. A 60 mm mandrel is wound up to a diameter of 6 10 mm. After heating and hardening, it is sliced into a 2.5 mm thick slice with a microtome. 'The mandrel is pulled out.-13- This paper size applies to Chinese national standards (CNS ) A4 specification (210X297mm) 552179 A7 B7 5. Description of the invention (11) The central hole of the invention is bonded with a uranium sheet with a diameter of 60mm and a thickness of 2.5mm to make the polishing cloth of the present invention. (Please read the precautions on the back before filling in this page.) The hardness of the surface (honed surface) of the finished polished cloth is 96% 1Kg f. The compression rate of the load is 5%. Since the polishing cloth of the present invention can control the fine structure of the honing function of the cut surface of the sheet by physical properties to a certain degree, it can be formed into a stable polishing cloth with no deviation in honing ability. Furthermore, the polishing cloth of the present invention uses the cut surface of the sheet as the honing surface, so that the same honing surface can be obtained from the same honing function, and after the honing surface is cut, The inside is still the same honing surface, so stable honing performance can be obtained. Another example is that when the surface of the sheet is provided as a honing surface, the fiber will easily fall off because it will be rubbed against the length of the fiber. However, since the cut surface is provided as a honing surface, the end face of the friction fiber will be formed, so the fiber will wear. It does not fall off, so that stable and excellent honing performance can be obtained. In addition, the polishing cloth of the present invention is provided with a snail-like cut surface. Because of the sharply formed honing cut surface, interlayer peeling is not easy to occur. Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs According to the present invention, the shortcomings of the conventional polishing cloth made of foamed uradan can be eliminated, and stable honing performance can be obtained. At the same time, the surface of the polishing cloth is trimmed fine every time, so it can be obtained. Benefits that need to be trimmed This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) _ 14-

Claims (1)

552179 A8 B8 C8 D8 :TC、申請專利範圍 1 · 一種磨光布,一種以上之片之切斷面係禍線狀地 配置於硏光布之硏磨面爲其特徵者。 2 .如申請專利範圍第1項所述之磨光布,其中上述 片之接觸部乃介著結著劑而被結著者。 3 ·如申請專利範圍第2項所述之磨光布,其中上述 片係包含磨粒片者。 4 ·如申請專利範圍第3項所述之磨光布,其中上述 片係磨粒片及纖維狀片者。 5 ·如申請專利範圍第4項所述之磨光布,其中上述 片磨粒片係含有粒子徑0 . 〇 1〜1 0 // m之磨粒之厚度 〇· 05〜10mm之纖維狀片者。 6 ·如申請專利範圍第5項所述之磨光布,其中上述 片磨粒係氧化矽,氧化鈽,氧化鋁,二氧化錳,氧化鐵, 氧化鋅,碳化矽,碳化硼,合成鑽石及電氣石粉體等之單 獨或二種以上者。 7 ·如申請專利範圍第5項所述之磨光布,其中上述 片纖維狀片乃織布,不織布或毛氈狀纖維質片者。 8 ·如申請專利範圍第1項所述之磨光布,其中上述 片磨光片係化學的機械硏磨用者。 9 · 一種磨光布之製造方法,將片捲繞成蝸線狀而予 以成形爲特徵之一種以上之片之切斷面係蝸線狀的配置於 磨光布之硏磨面爲其特徵者。 1 0 ·如申請專利範圍第9項所述之磨光布之製造方 法’其中將接著劑一面塗佈或一面含浸於片,而蝸線狀地 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇χ297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂' S. 經濟部智慧財產局員工消費合作社印製 -15· 552179 A8 B8 C8 D8 X、申請專利範圍 捲繞成形爲圓筒狀者。 1 1 ·如申請專利範圍第1 〇項所述之磨光布之製造 方法,其中 將上述形成爲圓筒形之成形物切斷於與捲軸成直角或 交叉之方向,以資將切斷面爲硏磨面而成者。 1 2 ·如申請專利範圍第1 1項所述之製造方法,其 中 上述片乃磨粒片之單獨或磨粒片及纖維狀片者。 (請先閲讀背面之注意事項再填寫本頁) 4 經濟部智慧財產局員工消費合作社印製 -16- 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇X:297公釐)552179 A8 B8 C8 D8: TC, patent application scope 1 · A kind of polishing cloth, the cutting surface of more than one kind of pieces are arranged linearly on the polishing surface of calender cloth as its characteristic. 2. The polishing cloth according to item 1 of the scope of patent application, wherein the contact portion of the above sheet is bound by an adhesive. 3. The polishing cloth according to item 2 of the scope of the patent application, wherein the above-mentioned sheet includes abrasive particles. 4 · The polishing cloth according to item 3 of the scope of patent application, wherein the above-mentioned sheets are abrasive particles and fibrous sheets. 5 · The polishing cloth as described in item 4 of the scope of patent application, wherein the above-mentioned abrasive grain sheet is a fibrous sheet containing abrasive grains having a particle diameter of 0. 〇1 ~ 1 0 // m and a thickness of 05 ~ 10 mm. By. 6 · The polishing cloth according to item 5 of the scope of the patent application, wherein the above abrasive grains are silicon oxide, hafnium oxide, aluminum oxide, manganese dioxide, iron oxide, zinc oxide, silicon carbide, boron carbide, synthetic diamond and Tourmaline powder, etc. alone or in combination of two or more. 7 · The polishing cloth according to item 5 of the scope of the patent application, wherein the fibrous sheet is a woven, non-woven or felt fibrous sheet. 8 · The polishing cloth according to item 1 of the scope of patent application, wherein the above polishing sheet is a chemical mechanical honing user. 9 · A method for manufacturing a polishing cloth, in which a sheet is wound into a snail shape and formed into a shape, and the cut surface of one or more pieces is snail-shaped and is arranged on the honing surface of the polishing cloth as its characteristic . 1 0 · The manufacturing method of the polishing cloth as described in item 9 of the scope of the patent application, wherein the adhesive is coated on one side or impregnated on the other side, and the worm-shaped ground paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇χ297mm) (Please read the precautions on the back before filling out this page) Order 'S. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -15 · 552179 A8 B8 C8 D8 X, Application for patent scope winding forming For those who are cylindrical. 1 1 · The manufacturing method of the polishing cloth as described in Item 10 of the scope of the patent application, wherein the cylindrical shaped article is cut in a direction at right angles to or crossing the reel to cut the cut surface. Made of honing surface. 1 2 · The manufacturing method described in item 11 of the scope of patent application, wherein the above-mentioned tablets are individual or abrasive tablets and fibrous tablets of abrasive tablets. (Please read the notes on the back before filling out this page) 4 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -16- This paper size applies to the Chinese National Standard (CNS) A4 specification (21〇X: 297 mm)
TW090116382A 2000-07-25 2001-07-04 Polishing pad and method for manufacturing the same TW552179B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000223541A JP2002036129A (en) 2000-07-25 2000-07-25 Polishing pad and manufacturing method therefor

Publications (1)

Publication Number Publication Date
TW552179B true TW552179B (en) 2003-09-11

Family

ID=18717615

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090116382A TW552179B (en) 2000-07-25 2001-07-04 Polishing pad and method for manufacturing the same

Country Status (4)

Country Link
US (1) US20020016145A1 (en)
JP (1) JP2002036129A (en)
KR (1) KR100789068B1 (en)
TW (1) TW552179B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374477B2 (en) * 2002-02-06 2008-05-20 Applied Materials, Inc. Polishing pads useful for endpoint detection in chemical mechanical polishing
JP4659338B2 (en) 2003-02-12 2011-03-30 Hoya株式会社 Manufacturing method of glass substrate for information recording medium and polishing pad used therefor
JP3917578B2 (en) * 2003-10-30 2007-05-23 株式会社東芝 Semiconductor device manufacturing method and manufacturing apparatus
KR101166455B1 (en) * 2009-03-30 2012-07-19 코오롱인더스트리 주식회사 Method of manufacturing polishing pad and polishing pad manufactured thereof
JP5809429B2 (en) * 2011-03-31 2015-11-10 株式会社クラレ Polishing pad
CN103786104A (en) * 2014-01-10 2014-05-14 当涂县南方红月磨具磨料有限公司 PVA (polyvinyl alcohol) resin cubic boron nitride grinding wheel
CN103831742A (en) * 2014-02-11 2014-06-04 当涂县南方红月磨具磨料有限公司 Ceramic and diamond grinding wheel containing tourmaline
CN103846822A (en) * 2014-02-11 2014-06-11 当涂县南方红月磨具磨料有限公司 Super-hard ceramic cubic boron nitride grinding wheel
CN103846823A (en) * 2014-02-11 2014-06-11 当涂县南方红月磨具磨料有限公司 Urea-containing ceramic fused alumina zirconia grinding wheel
CN103831743A (en) * 2014-02-11 2014-06-04 当涂县南方红月磨具磨料有限公司 Diamond grinding wheel containing poly aluminum chloride
US11759909B2 (en) * 2020-06-19 2023-09-19 Sk Enpulse Co., Ltd. Polishing pad, preparation method thereof and method for preparing semiconductor device using same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036157U (en) * 1983-08-19 1985-03-12 三共理化学株式会社 polishing machine
JPH05277958A (en) * 1992-03-31 1993-10-26 Seiken:Kk Polishing roll used for cutting mill scale
JPH0647677A (en) * 1992-07-31 1994-02-22 Nippon Steel Corp Laminate roll type grinding tool and its manufacture
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5605760A (en) * 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
JPH1199468A (en) * 1997-09-29 1999-04-13 Toshiba Corp Polishing pad and polishing device using the same

Also Published As

Publication number Publication date
KR100789068B1 (en) 2007-12-26
JP2002036129A (en) 2002-02-05
KR20020008753A (en) 2002-01-31
US20020016145A1 (en) 2002-02-07

Similar Documents

Publication Publication Date Title
TW402540B (en) Polishing pad for a semiconductor substrate
TW552179B (en) Polishing pad and method for manufacturing the same
US6007407A (en) Abrasive construction for semiconductor wafer modification
KR100571448B1 (en) Polishing pads with advantageous microstructure
TWI352643B (en) Method of forming a polishing pad having reduced s
TW543110B (en) Rubbing pad
WO2006040864A1 (en) Abrasive pad
JP6324958B2 (en) Polishing pad and manufacturing method thereof
TWI287836B (en) Polishing pad with window for planarization
JP6396888B2 (en) Polishing pad and polishing method
DE102014007027A1 (en) Soft and conditionable chemical-mechanical window polishing pad
DE102014007002A1 (en) Chemical-mechanical multilayer polishing pad stack with soft and conditionable polishing layer
CN102601727A (en) Chemical mechanical polishing pad and chemical mechanical polishing method
KR102362022B1 (en) Abrasive body and manufacturing method thereof
CN107206570B (en) Multi-layer nanofiber chemical mechanical polishing pad
JP4566660B2 (en) Polishing cloth for finish polishing and method for manufacturing polishing cloth
JP4237800B2 (en) Polishing pad
JP2002192455A (en) Abrasive pad
WO2006095643A1 (en) Polishing pad
JP3526943B2 (en) Polishing tape
JP2005251851A (en) Polishing pad and polishing method
JP2006142440A (en) Polishing pad and polishing method using the same
JP2002154060A (en) Polishing wheel, manufacturing method for polishing wheel and polishing method
JP2017092423A (en) Polishing pad and method for manufacturing the same
JP2006142439A (en) Polishing pad and polishing method using the same

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees